JP7221032B2 - 載置台および被処理体の除電方法 - Google Patents
載置台および被処理体の除電方法 Download PDFInfo
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Description
図1は、本開示の一実施形態におけるプラズマ処理装置1の一例を示す概略断面図である。本実施形態におけるプラズマ処理装置1は、容量結合型のプラズマエッチング装置である。プラズマ処理装置1は、装置本体2および制御装置3を備える。
図3は、被処理体WPを吸着保持している静電チャック40の断面の一例を示す模式図である。未処理の被処理体WPは、静電チャック40の上面に載置され、スイッチ43によって直流電源42と電極40aとが接続され、直流電源42からの直流電圧が電極40aに印加される。これにより、例えば図3に示されるように、電極40aに「+」の電荷が供給される。
P=PS+(W/SWP)×0.73556 ・・・(1)
図6は、本開示の一実施形態における除電方法の一例を示すフローチャートである。図6のフローチャートに例示された処理は、被処理体WPに対するエッチング等の処理が終了した後に開始される。また、図6のフローチャートに例示された各処理は、制御装置3の制御によって実行される。
なお、本願に開示された技術は、上記した実施形態に限定されるものではなく、その要旨の範囲内で数々の変形が可能である。
1 プラズマ処理装置
2 装置本体
3 制御装置
10 処理容器
11 載置台
38 シャワーヘッド
40 静電チャック
40d 凸部
40e 環状凸部
52 伝熱ガス供給源
54 配管
54a 第1の配管
54b 第2の配管
54c 開口
54d 排気路
75 ヒータ
80 光源
81 導光部
82 光ファイバ
82a 端面
Claims (8)
- 被処理体を載置する載置台であって、
前記被処理体を載置し、静電気力により前記被処理体を吸着保持する静電チャックと、
前記静電チャックを介して、前記静電チャック上に載置された前記被処理体と前記静電チャックとの間にガスを供給するガス供給路と、
前記ガス供給路内を流れる前記ガスまたは前記被処理体と前記静電チャックとの間に供給された前記ガスに所定波長の光を照射することにより、前記ガスをイオン化する照射部と、
前記静電チャックの内部に配置され、前記載置台の外部に設けられ光源から出力された前記光を前記照射部へ導く光ファイバと
を備える載置台。 - 被処理体を載置し、静電気力により前記被処理体を吸着保持する静電チャックと、
前記静電チャックを介して、前記静電チャック上に載置された前記被処理体と前記静電チャックとの間にガスを供給するガス供給路と、
前記ガス供給路内を流れる前記ガスまたは前記被処理体と前記静電チャックとの間に供給された前記ガスに所定波長の光を照射することにより、前記ガスをイオン化する照射部とを備え、
前記照射部は、前記静電チャックに複数設けられ、
それぞれの前記照射部は、
前記被処理体と前記静電チャックとの間の異なる場所において、前記被処理体と前記静電チャックとの間に供給された前記ガスに所定波長の光を照射することにより、前記ガスをイオン化する、
載置台。 - 被処理体を載置し、静電気力により前記被処理体を吸着保持する静電チャックと、
前記静電チャックを介して、前記静電チャック上に載置された前記被処理体と前記静電チャックとの間にガスを供給するガス供給路と、
前記ガス供給路内を流れる前記ガスまたは前記被処理体と前記静電チャックとの間に供給された前記ガスに所定波長の光を照射することにより、前記ガスをイオン化する照射部とを備え、
前記被処理体と前記静電チャックとの間に供給される前記ガスの圧力は、
前記被処理体の重量をW[g]、前記静電チャックに面する側の前記被処理体の面積をS WP [cm 2 ]、前記静電チャック側の前記被処理体の面の反対側の面が面している空間内の圧力をP S [Torr]とした場合、下記の式(1)で表される圧力P[Torr]以下である載置台。
P=P S +(W/S WP )×0.73556 ・・・(1) - 前記照射部は、前記静電チャックに複数設けられ、
それぞれの前記照射部は、
前記被処理体と前記静電チャックとの間の異なる場所において、前記被処理体と前記静電チャックとの間に供給された前記ガスに所定波長の光を照射することにより、前記ガスをイオン化する請求項1または3に記載の載置台。 - 前記被処理体と前記静電チャックとの間に供給される前記ガスの圧力は、
前記被処理体の重量をW[g]、前記静電チャックに面する側の前記被処理体の面積をSWP[cm2]、前記静電チャック側の前記被処理体の面の反対側の面が面している空間内の圧力をPS[Torr]とした場合、下記の式(1)で表される圧力P[Torr]以下である請求項1に記載の載置台。
P=PS+(W/SWP)×0.73556 ・・・(1) - 前記ガス供給路は、
第1の供給路と、
前記第1の供給路に接続され、前記第1の供給路に供給された前記ガスを分岐させて前記被処理体と前記静電チャックとの間の異なる場所に前記ガスを供給する複数の第2の供給路とを有し、
前記照射部は、
前記第1の供給路内を流れる前記ガスに前記光を照射することにより、前記被処理体と前記静電チャックとの間の異なる場所にイオン化された前記ガスを供給する請求項1、3または5に記載の載置台。 - 前記光は、UV(Ultra Violet)、VUV(Vacuum Ultra Violet)、または軟X線である請求項1から6のいずれか一項に記載の載置台。
- 請求項1から7のいずれか一項に記載の載置台に備えられた、前記静電チャックへの電圧供給を停止する停止工程と、
前記静電チャック内に設けられたガス供給路を介して、前記静電チャック上に載置された前記被処理体と前記静電チャックとの間にガスを供給する供給工程と、
前記ガス供給路内を流れる前記ガスまたは前記被処理体と前記静電チャックとの間に供給された前記ガスに所定波長の光を照射することにより、前記ガスをイオン化するイオン化工程と
を含む被処理体の除電方法。
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JP2018216978A JP7221032B2 (ja) | 2018-11-20 | 2018-11-20 | 載置台および被処理体の除電方法 |
US16/688,667 US11582854B2 (en) | 2018-11-20 | 2019-11-19 | Mounting table and charge neutralization method for target object |
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JP2010199239A (ja) | 2009-02-24 | 2010-09-09 | Tokyo Electron Ltd | 被処理基板の除電方法及び基板処理装置 |
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JP3169993B2 (ja) * | 1991-08-19 | 2001-05-28 | 忠弘 大見 | 静電吸着装置 |
JPH06188305A (ja) * | 1992-12-17 | 1994-07-08 | Tokyo Electron Ltd | 被吸着体の離脱装置および被吸着体の離脱方法およびプラズマ処理装置 |
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JP2010199239A (ja) | 2009-02-24 | 2010-09-09 | Tokyo Electron Ltd | 被処理基板の除電方法及び基板処理装置 |
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