JP7190012B2 - ハロゲン化材料及び負の電子親和性ナノ粒子から成る原料におけるuv誘起溶媒和電子からの直接付加合成 - Google Patents
ハロゲン化材料及び負の電子親和性ナノ粒子から成る原料におけるuv誘起溶媒和電子からの直接付加合成 Download PDFInfo
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Description
(実施態様1)システムであって、
不活性金属を含むプラテンと不活性雰囲気を含むエンクロージャとを含む3次元(3D)プリンタと、
ハロゲン化溶液と負の電子親和力を有するナノ粒子とを含み、前記プラテン上に堆積するように構成された原料と、
前記ナノ粒子を誘起して前記ハロゲン化溶液中に溶媒和電子を放出させ、還元によってセラミックと二原子ハロゲンとを形成するように構成されたレーザーと、を備えるシステム。
(実施態様2)前記ハロゲン化溶液は、四塩化炭素又は四臭化炭素の一方又は両方であり、前記セラミックは、多結晶ダイヤモンドを含む、実施態様1に記載のシステム。
(実施態様3)前記ナノ粒子は、ダイヤモンドイド又は水素終端ナノダイヤモンドの一方又は両方であり、前記セラミックは、多結晶ダイヤモンドを含む、実施態様1に記載のシステム。
(実施態様4)前記ハロゲン化溶液は、sp3炭素寄与物質及びsp1炭素寄与物質を含み、前記セラミックは、混合炭素混成軌道セラミックを含む、実施態様1に記載のシステム。
(実施態様5)前記ハロゲン化溶液は、sp2炭素寄与物質及びsp3炭素寄与物質を含み、前記セラミックは、混合炭素混成軌道セラミックを含む、実施態様1に記載のシステム。
(実施態様6)前記ハロゲン化溶液は、ハロゲン化シリコン-炭素化合物であり、前記ナノ粒子は、水素終端炭化ケイ素ナノ粒子である、実施態様1に記載のシステム。
(実施態様7)前記セラミックは、窯を使用せずに形成される、実施態様1に記載のシステム。
(実施態様8)付加製造法であって、
3次元(3D)プリンタのプラテン上に、ハロゲン化溶液と負の電子親和力を有するナノ粒子とを含む原料の薄膜を堆積させるステップと、
レーザーを用いて前記ナノ粒子を誘起して前記ハロゲン化溶液中に溶媒和電子を放出させ、還元によってセラミックの層と二原子ハロゲンとを形成するステップと、を含み、
前記セラミックの各層は、物体の断面に対応する形状に形成され、
前記原料の薄膜は、前記セラミックの層が前記物体の形状を形成するまで堆積される、方法。
(実施態様9)前記ハロゲン化溶液は、四塩化炭素又は四臭化炭素の一方又は両方であり、前記セラミックは、多結晶ダイヤモンドを含む、実施態様8に記載の方法。
(実施態様10)前記ナノ粒子は、ダイヤモンドイド又は水素終端ナノダイヤモンドの一方又は両方であり、前記セラミックは、多結晶ダイヤモンドを含む、実施態様8に記載の方法。
(実施態様11)前記ハロゲン化溶液は、sp3炭素寄与物質及びsp1炭素寄与物質を含み、前記セラミックは、混合炭素混成軌道セラミックを含む、実施態様8に記載の方法。
(実施態様12)前記ハロゲン化溶液は、sp2炭素寄与物質及びsp3炭素寄与物質を含み、前記セラミックは、混合炭素混成軌道セラミックを含む、実施態様8に記載の方法。
(実施態様13)前記ハロゲン化溶液は、ハロゲン化シリコン-炭素化合物であり、前記ナノ粒子は、水素終端炭化ケイ素ナノ粒子である、実施態様8に記載の方法。
(実施態様14)前記セラミックは、窯を使用せずに形成される、実施態様8に記載の方法。
(実施態様15)3次元(3D)プリンタであって、
前記3次元(3D)プリンタ内に封入された不活性雰囲気と、
不活性金属を含み、上に原料を堆積させるように構成されたプラテンと、
制御ユニットと、を備え、
前記制御ユニットは、
前記3次元(3D)プリンタのプラテン上に、ハロゲン化溶液と負の電子親和力を有するナノ粒子とを含む原料の薄膜を堆積させ、
レーザーを用いて前記ナノ粒子を誘起して前記ハロゲン化溶液中に溶媒和電子を放出させ、還元によってセラミックの層と二原子ハロゲンとを形成する、ように構成され、
前記セラミックの各層は、物体の断面に対応する形状に形成され、
前記原料の薄膜は、前記セラミックの層が前記物体の形状を形成するまで堆積される、3次元(3D)プリンタ。
(実施態様16)前記ハロゲン化溶液は、四塩化炭素又は四臭化炭素の一方又は両方であり、前記セラミックは、多結晶ダイヤモンドを含む、実施態様15に記載の3次元(3D)プリンタ。
(実施態様17)前記ナノ粒子は、ダイヤモンドイド又は水素終端ナノダイヤモンドの一方又は両方であり、前記セラミックは、多結晶ダイヤモンドを含む、実施態様15に記載の3次元(3D)プリンタ。
(実施態様18)前記ハロゲン化溶液は、sp3炭素寄与物質及びsp1炭素寄与物質を含み、前記セラミックは、混合炭素混成軌道セラミックを含む、実施態様15に記載の3次元(3D)プリンタ。
(実施態様19)前記ハロゲン化溶液は、sp2炭素寄与物質及びsp3炭素寄与物質を含み、前記セラミックは、混合炭素混成軌道セラミックを含む、実施態様15に記載の3次元(3D)プリンタ。
(実施態様20)前記ハロゲン化溶液は、ハロゲン化シリコン-炭素化合物であり、前記ナノ粒子は、水素終端炭化ケイ素ナノ粒子である、実施態様15に記載の3次元(3D)プリンタ。
Claims (13)
- システムであって、
不活性金属を含むプラテンと不活性雰囲気を含むエンクロージャとを含む3次元(3D)プリンタと、
ハロゲン化溶液と負の電子親和力を有するナノ粒子とを含み、前記プラテン上に堆積するように構成された原料と、
前記ナノ粒子を誘起して前記ハロゲン化溶液中に溶媒和電子を放出させ、還元によってセラミックと二原子ハロゲンとを形成するように構成されたレーザーと、を備えるシステム。 - 前記ハロゲン化溶液は、四塩化炭素又は四臭化炭素の一方又は両方であり、
前記セラミックは、多結晶ダイヤモンドを含む、請求項1に記載のシステム。 - 前記ナノ粒子は、ダイヤモンドイド又は水素終端ナノダイヤモンドの一方又は両方であり、
前記セラミックは、多結晶ダイヤモンドを含む、請求項1に記載のシステム。 - 前記ハロゲン化溶液は、sp3炭素寄与物質及びsp1炭素寄与物質を含み、
前記セラミックは、混合炭素混成軌道セラミックを含む、請求項1に記載のシステム。 - 前記ハロゲン化溶液は、sp2炭素寄与物質及びsp3炭素寄与物質を含み、
前記セラミックは、混合炭素混成軌道セラミックを含む、請求項1に記載のシステム。 - 前記ハロゲン化溶液は、ハロゲン化シリコン-炭素化合物であり、
前記ナノ粒子は、水素終端炭化ケイ素ナノ粒子である、請求項1に記載のシステム。 - 前記セラミックは、窯を使用せずに形成される、請求項1に記載のシステム。
- 3次元(3D)プリンタであって、
前記3次元(3D)プリンタ内に封入された不活性雰囲気と、
不活性金属を含み、上に原料を堆積させるように構成されたプラテンと、
制御ユニットと、を備え、
前記制御ユニットは、
前記3次元(3D)プリンタのプラテン上に、ハロゲン化溶液と負の電子親和力を有するナノ粒子とを含む原料の薄膜を堆積させ、
レーザーを用いて前記ナノ粒子を誘起して前記ハロゲン化溶液中に溶媒和電子を放出させ、還元によってセラミックの層と二原子ハロゲンとを形成する、ように構成され、
前記セラミックの各層は、物体の断面に対応する形状に形成され、
前記原料の薄膜は、前記セラミックの層が前記物体の形状を形成するまで堆積される、3次元(3D)プリンタ。 - 前記ハロゲン化溶液は、四塩化炭素又は四臭化炭素の一方又は両方であり、
前記セラミックは、多結晶ダイヤモンドを含む、請求項8に記載の3次元(3D)プリンタ。 - 前記ナノ粒子は、ダイヤモンドイド又は水素終端ナノダイヤモンドの一方又は両方であり、
前記セラミックは、多結晶ダイヤモンドを含む、請求項8に記載の3次元(3D)プリンタ。 - 前記ハロゲン化溶液は、sp3炭素寄与物質及びsp1炭素寄与物質を含み、
前記セラミックは、混合炭素混成軌道セラミックを含む、請求項8に記載の3次元(3D)プリンタ。 - 前記ハロゲン化溶液は、sp2炭素寄与物質及びsp3炭素寄与物質を含み、
前記セラミックは、混合炭素混成軌道セラミックを含む、請求項8に記載の3次元(3D)プリンタ。 - 前記ハロゲン化溶液は、ハロゲン化シリコン-炭素化合物であり、
前記ナノ粒子は、水素終端炭化ケイ素ナノ粒子である、請求項8に記載の3次元(3D)プリンタ。
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