JP7179742B2 - 散乱計測オーバーレイターゲット及び方法 - Google Patents

散乱計測オーバーレイターゲット及び方法 Download PDF

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JP7179742B2
JP7179742B2 JP2019543203A JP2019543203A JP7179742B2 JP 7179742 B2 JP7179742 B2 JP 7179742B2 JP 2019543203 A JP2019543203 A JP 2019543203A JP 2019543203 A JP2019543203 A JP 2019543203A JP 7179742 B2 JP7179742 B2 JP 7179742B2
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JP2020510857A5 (ru
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イドゥ アダム
ウラジミール レビンスキ
アムノン マナッセン
ユバル ルバシェブスカイ
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/32—Fiducial marks and measuring scales within the optical system
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/80—Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/673—Focus control based on electronic image sensor signals based on contrast or high frequency components of image signals, e.g. hill climbing method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N2021/653—Coherent methods [CARS]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Eye Examination Apparatus (AREA)
  • Measuring And Recording Apparatus For Diagnosis (AREA)
  • Developing Agents For Electrophotography (AREA)
JP2019543203A 2017-02-10 2017-12-15 散乱計測オーバーレイターゲット及び方法 Active JP7179742B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762457787P 2017-02-10 2017-02-10
US62/457,787 2017-02-10
PCT/US2017/066853 WO2018147938A1 (en) 2017-02-10 2017-12-15 Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements

Publications (3)

Publication Number Publication Date
JP2020510857A JP2020510857A (ja) 2020-04-09
JP2020510857A5 JP2020510857A5 (ru) 2021-02-04
JP7179742B2 true JP7179742B2 (ja) 2022-11-29

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US (1) US11112704B2 (ru)
JP (1) JP7179742B2 (ru)
KR (1) KR102495480B1 (ru)
CN (1) CN110312966B (ru)
DE (1) DE112017007043T5 (ru)
SG (1) SG11201906424WA (ru)
TW (1) TWI767989B (ru)
WO (1) WO2018147938A1 (ru)

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TWI799654B (zh) * 2018-11-29 2023-04-21 美商科磊股份有限公司 度量衡目標，半導體度量衡的方法，電腦程式產品，及度量衡模組
US11256177B2 (en) 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
EP4303658A1 (en) * 2022-07-05 2024-01-10 ASML Netherlands B.V. Method of correction metrology signal data
US20240167813A1 (en) * 2022-11-23 2024-05-23 Kla Corporation System and method for suppression of tool induced shift in scanning overlay metrology

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JP2007266601A (ja) 2006-03-28 2007-10-11 Asml Netherlands Bv オーバーレイ測定を使用するリソグラフィ装置およびデバイス製造方法
JP2009532862A (ja) 2006-03-31 2009-09-10 ケーエルエー−テンカー テクノロジィース コーポレイション スキャトロメトリを用いてオーバレイ誤差を検出するための装置および方法
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TW201835679A (zh) 2018-10-01
CN110312966A (zh) 2019-10-08
SG11201906424WA (en) 2019-08-27
US20190033726A1 (en) 2019-01-31
CN110312966B (zh) 2022-03-25
WO2018147938A1 (en) 2018-08-16
TWI767989B (zh) 2022-06-21
KR102495480B1 (ko) 2023-02-02
US11112704B2 (en) 2021-09-07
JP2020510857A (ja) 2020-04-09
KR20190107298A (ko) 2019-09-19
DE112017007043T5 (de) 2020-01-16

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