JP7173392B1 - Adhesive tape for semiconductor processing - Google Patents

Abstract

Kind Code: A1 A semiconductor processing adhesive tape capable of reliably fixing a wafer or a chip during a dicing process even when the wafer on which a circuit is formed is warped is provided. A semiconductor processing adhesive tape 10 having a substrate 1 and an energy ray-curable adhesive layer 2 disposed on one surface of the substrate, wherein the peel distance measured by the following test is 4 mm or less. is. In the test, the adhesive tape for semiconductor processing was cut into a size of 25 mm in width and 100 mm in length, and the test piece was attached to the surface of the copper foil as the adherend, and the temperature was 25 ° C. ± 5 ° C. and the humidity was 40% RH. 60% RH or less, in an environment where energy rays are blocked, the metal frame is horizontal, the adherend is suspended in the air, and after storage for 3 days, measure the distance at which the test piece peels off from the adherend. and the separation distance. [Selection drawing] Fig. 1

Description

The present disclosure relates to an adhesive tape for semiconductor processing.

In the semiconductor manufacturing process, a semiconductor processing adhesive tape called a dicing tape is used to protect and fix the wafer and chips in the dicing process of cutting (dicing) a wafer on which circuits are formed.

Adhesive tapes for semiconductor processing are required to be able to fix wafers and chips with sufficient adhesive strength during processing and to be able to be easily peeled off after processing without damaging the chips.

As such adhesive tapes for semiconductor processing, for example, energy ray-curable adhesive tapes have been actively developed (for example, Patent Documents 1 and 2). Energy ray-curable adhesive tapes can be reduced in adhesive force by curing the adhesive layer with energy ray irradiation. It is possible to achieve both

JP 2018-195616 A JP 2012-209502 A

2. Description of the Related Art In recent years, with the miniaturization and high performance of electronic components, there is a demand for higher integration of circuits formed on wafers, and miniaturization and multi-layering of circuits are being promoted. However, since internal stress acts on a thin film formed on a substrate such as a wafer, a phenomenon in which the entire wafer is warped is observed when the thin film is multilayered. Further, as the circuit becomes finer and multi-layered, the unevenness (step) on the circuit surface of the wafer becomes larger.

Therefore, the adhesive tape for semiconductor processing is required to reliably fix the wafer and the chips during the dicing process even if the wafer on which the circuit is formed is warped.

The present disclosure has been made in view of the above circumstances, and a main object of the present disclosure is to provide an adhesive tape for semiconductor processing that has excellent adhesiveness to an adherend having warpage.

One embodiment of the present disclosure is a semiconductor processing adhesive tape having a substrate and an energy ray-curable adhesive layer disposed on one surface of the substrate, wherein the peeling measured by the following test To provide an adhesive tape for semiconductor processing with a distance of 4 mm or less. Test: It has the following steps (1) to (5) in order. (1) A test piece is prepared by cutting the adhesive tape for semiconductor processing into a size of 25 mm in width and 100 mm in length. (2) A cylindrical plastic core having an inner diameter of 3 inches, a thickness of 6 mm, a length of 94 mm, and a weight of 155 g, and a copper foil having a thickness of 35 μm, a width of 80 mm, and a length of 100 mm disposed on the outer peripheral surface of the plastic core. Prepare an adherend having (3) Of the surface of the adhesive layer of the test piece, a region having a width of 25 mm and a length of 25 mm is attached to the surface of the copper foil of the adherend, with the adherend facing downward, Both ends of the test piece in the longitudinal direction are fixed to a metal frame so that the test piece is horizontal. (4) In an environment where the temperature is 25°C ± 5°C, the humidity is 40% RH or more and 60% RH or less, and the energy rays are blocked, the metal frame is horizontal, and the adherend is suspended in the air. Store for days. (5) The distance that the test piece is peeled from the adherend is measured and taken as the peel distance.

INDUSTRIAL APPLICABILITY The present disclosure can provide a semiconductor processing pressure-sensitive adhesive tape that exhibits excellent adhesion to warped adherends.

1 is a schematic cross-sectional view showing an example of an adhesive tape for semiconductor processing in the present disclosure; FIG. It is process drawing which illustrates the manufacturing method of a semiconductor. It is process drawing which illustrates the manufacturing method of a semiconductor. FIG. 4 is a schematic diagram illustrating a test in the present disclosure; FIG. FIG. 4 is a schematic diagram illustrating a test in the present disclosure; FIG.

Embodiments of the present disclosure will be described below with reference to the drawings and the like. However, the present disclosure can be embodied in many different modes and should not be construed as limited to the description of the embodiments exemplified below. In addition, in order to make the description clearer, the drawings may schematically show the width, thickness, shape, etc. of each part compared to the actual form, but this is only an example and limits the interpretation of the present disclosure. not something to do. In addition, in this specification and each figure, the same reference numerals may be given to the same elements as those described above with respect to the existing figures, and detailed description thereof may be omitted as appropriate.

In this specification, when expressing a mode in which another member is arranged on top of a certain member, the term “above” or “below” simply means that it is in contact with a certain member unless otherwise specified. , arranging another member directly above or below, and arranging another member above or below a certain member via another member. In addition, in this specification, when expressing a mode in which another member is arranged on the surface of a certain member, unless otherwise specified, when simply described as “on the surface”, it means directly above or in contact with a certain member, unless otherwise specified. It includes both the case of arranging another member directly below and the case of arranging another member above or below a certain member via another member.

The adhesive tape for semiconductor processing of the present disclosure will be described below.

The adhesive tape for semiconductor processing of the present disclosure has a substrate and an energy ray-curable adhesive layer disposed on one surface of the substrate, and has a peel distance of 4 mm or less as measured by the following test. be. Test: It has the following steps (1) to (5) in order. (1) A test piece is prepared by cutting the adhesive tape for semiconductor processing into a size of 25 mm in width and 100 mm in length. (2) A cylindrical plastic core having an inner diameter of 3 inches, a thickness of 6 mm, a length of 94 mm, and a weight of 155 g, and a copper foil having a thickness of 35 μm, a width of 80 mm, and a length of 100 mm disposed on the outer peripheral surface of the plastic core. Prepare an adherend having (3) Of the surface of the adhesive layer of the test piece, a region having a width of 25 mm and a length of 25 mm is attached to the surface of the copper foil of the adherend, with the adherend facing downward, Both ends of the test piece in the longitudinal direction are fixed to a metal frame so that the test piece is horizontal. (4) In an environment where the temperature is 25°C ± 5°C, the humidity is 40% RH or more and 60% RH or less, and the energy rays are blocked, the metal frame is horizontal, and the adherend is suspended in the air. Store for days. (5) The distance that the test piece is peeled from the adherend is measured and taken as the peel distance.

FIG. 1 is a schematic cross-sectional view illustrating the adhesive tape for semiconductor processing of the present disclosure. A semiconductor processing adhesive tape 10 shown in FIG. In the adhesive tape for semiconductor processing 10, the peel distance measured by the above test is a predetermined value or less.

FIGS. 2A to 2E are process diagrams showing an example of a semiconductor manufacturing method using a semiconductor processing adhesive tape. First, as shown in FIG. 2(a), a wafer 11 having a circuit formed thereon is attached to an adhesive tape 10 for semiconductor processing, and then, as shown in FIG. 2(b), the wafer 11 having a circuit formed thereon is attached. A dicing process for cutting (dicing) into chips 12 is performed. Next, as shown in FIG. 2(c), an expanding step is performed in which the semiconductor processing adhesive tape 10 is stretched to widen the gap between the chips 12. Next, as shown in FIG. Next, although not shown, the energy ray-curable adhesive layer 2 of the adhesive tape 10 for semiconductor processing is irradiated with an energy ray to be cured to reduce the adhesive strength, and as shown in FIG. 12 is separated from the adhesive tape 10 for semiconductor processing, and a pick-up step of picking up the chip 12 is performed. Next, as shown in FIG. 2(e), a mounting (die bonding) step is performed to bond the picked-up chip 12 to the substrate 30. Next, as shown in FIG.

FIGS. 3(a) to 3(d) are process diagrams showing another example of a semiconductor manufacturing method using a semiconductor processing adhesive tape. First, as shown in FIG. 3(a), a wafer 11 having a circuit formed thereon is attached to an adhesive tape 10 for semiconductor processing, and then, as shown in FIG. A dicing process for cutting (dicing) into chips 12 is performed. Next, as shown in FIG. 3C, a transfer tape 40 is attached to the surface of the chip 12 opposite to the adhesive tape 10 for semiconductor processing. Energy rays are applied to the radiation-curing adhesive layer 2 to cure it, thereby reducing the adhesive force. As shown in FIG. is transferred to the transfer tape 40 .

4(a), (b) and FIG. 5(a) are schematic diagrams for explaining the above test. 4(a) and 4(b) show the adhesive tape for semiconductor processing before a load due to the weight of the adherend is applied. FIG. 5 shows the state after applying a load due to the weight of the adherend to the pressure-sensitive adhesive tape for semiconductor processing. 4(a) is a top view, and FIG. 4(b) is a sectional view taken along the line AA of FIG. 4(a). As shown in FIGS. 4(a) and 4(b), in the above test, the adhesive tape 10 for semiconductor processing having a width of 25 mm and a length of 100 mm and an adhesive tape having an inner diameter of 3 inches, a thickness of 6 mm, a length of 94 mm and a weight of 155 g were tested. An adherend 51 having a cylindrical plastic core 52 and a copper foil 53 having a thickness of 35 μm, a width of 80 mm, and a length of 100 mm is used. First, of the surface of the adhesive layer of the adhesive tape 10 for semiconductor processing, a region 55 having a width of 25 mm and a length of 25 mm was adhered to the surface of the copper foil 53 of the adherend 51, with the adherend 51 facing downward. Then, both longitudinal ends of the adhesive tape 10 for semiconductor processing are fixed to the metal frame 54 so that the adhesive tape 10 for semiconductor processing is horizontal. In addition, hereinafter, the region having a width of 25 mm and a length of 25 mm may be referred to as a bonding region. Next, in an environment where the temperature is 25° C.±5° C., the humidity is 40% RH or more and 60% RH or less, and the energy rays are blocked, the adherend 51 is suspended so that the metal frame 54 is horizontal. Store for days. Then, as shown in FIG. 5, in the bonding region 55, the distance d at which the semiconductor processing adhesive tape 10 is peeled off from the adherend 51 is measured and taken as the peeling distance.

In the pressure-sensitive adhesive tape for semiconductor processing of the present disclosure, when the peel distance measured by the above test is equal to or less than a predetermined value, excellent curved surface adhesiveness can be obtained. Therefore, even if an adherend such as a wafer on which a circuit is formed is warped, the adhesive tape for semiconductor processing can be strongly adhered to the adherend, and lifting and peeling from the edge can be suppressed. be able to. Therefore, in the dicing process, the adherend can be reliably fixed by the adhesive tape for semiconductor processing.

Here, in general, the performance of adhesive tapes is often indicated by the three properties of adhesive strength, holding power, and tack, and the test method for adhesive tapes is specified in JIS Z0237. However, the adhesive strength, holding power, and tack defined in JIS Z0237 are not evaluations of adhesive performance on curved surfaces.

On the other hand, in the present disclosure, the above test is performed as an evaluation of adhesion performance to curved surfaces. In the above test, since the adhesive tape for semiconductor processing is subjected to a load due to the weight of the adherend, both the adhesive strength (difficulty in peeling) and the holding power (difficulty in shifting) on the curved surface were evaluated. It is thought that there are

Therefore, in the present disclosure, the peel distance measured by the above test is equal to or less than a predetermined value, so that the adhesion and holding power to curved surfaces can be increased. Therefore, even if the adherend has a warp, it is possible to suppress lifting and peeling from the edge of the adhesive tape for semiconductor processing. , cracks) can be suppressed. Therefore, by using the adhesive tape for semiconductor processing of the present disclosure, even if the adherend has warpage, it can be used for manufacturing a semiconductor.

In addition, as an evaluation of the curved surface adhesiveness of the adhesive tape, for example, one surface of the adhesive tape is attached to the first sheet-like adherend, and the other surface of the adhesive tape is attached to the curved surface of the second adherend. A curved surface adhesion test is known in which the floating height of the end of the adhesive tape is measured after a predetermined period of time has passed. In such a curved surface adhesion test, by attaching a sheet-like first adherend to one surface of the adhesive tape, when the other surface of the adhesive tape is attached to the curved surface of the second adherend, It is considered that a repulsive force is applied to

In contrast, in the present disclosure, one surface of the adhesive tape for semiconductor processing is attached to the curved surface of the adherend, but the other surface of the adhesive tape for semiconductor processing is not attached to anything. In this case, if no load is applied due to the weight of the adherend, if the base material of the adhesive tape for semiconductor processing is stiff, a repulsive force will be applied. Since the force is small, there is a possibility that the curved surface adhesiveness (repulsion resistance) cannot be evaluated sufficiently. Therefore, even if the base material is soft, a load is applied by the weight of the adherend so that the curved surface adhesiveness (repulsion resistance) can be sufficiently evaluated.

Hereinafter, each configuration of the adhesive tape for semiconductor processing of the present disclosure will be described.

1. Properties of Semiconductor Processing Adhesive Tape In the semiconductor processing adhesive tape of the present disclosure, the peel distance measured by the following test is 4 mm or less, preferably 2 mm or less, and more preferably 1 mm or less. The peel distance is preferably small, and the lower limit is not particularly limited.

Test: It has the following steps (1) to (5) in order.
(1) A test piece is prepared by cutting the adhesive tape for semiconductor processing into a size of 25 mm in width and 100 mm in length.
(2) A cylindrical plastic core having an inner diameter of 3 inches, a thickness of 6 mm, a length of 94 mm, and a weight of 155 g, and a copper foil having a thickness of 35 μm, a width of 80 mm, and a length of 100 mm disposed on the outer peripheral surface of the plastic core. Prepare an adherend having
(3) Of the surface of the adhesive layer of the test piece, a region having a width of 25 mm and a length of 25 mm is attached to the surface of the copper foil of the adherend, with the adherend facing downward, Both ends of the test piece in the longitudinal direction are fixed to a metal frame so that the test piece is horizontal.
(4) In an environment where the temperature is 25°C ± 5°C, the humidity is 40% RH or more and 60% RH or less, and the energy rays are blocked, the metal frame is horizontal, and the adherend is suspended in the air. Store for days.
(5) The distance that the test piece is peeled from the adherend is measured and taken as the peel distance.

In the above step (2), a plastic core made of acrylonitrile-butadiene-styrene copolymer resin (ABS resin) manufactured by Showa Marutsutsu Co., Ltd. is used as the plastic core. As the copper foil, a 35 μm-thick rolled copper foil “RCF-T5B” manufactured by Fukuda Metal Foil & Powder Co., Ltd. is used. When the adherend is produced, the copper foil is wrapped around the outer peripheral surface of the plastic core and fixed so that the glossy side of the rolled copper foil faces up. At this time, the copper foil is wound around the plastic core so that the longitudinal direction of the copper foil is aligned with the circumferential direction of the plastic core. As a method of fixing the copper foil to the plastic core, for example, a method of fixing with an adhesive tape can be used.

In the above test, a copper foil was wrapped around the plastic core to simulate a warped adherend such as a wafer on which a circuit was formed. In addition, copper foil is used in the above test because copper wiring is widely used in semiconductors due to miniaturization and speeding up.

In the above step (3), for example, as shown in FIGS. 4A and 4B, a 25 mm wide and 25 mm long area of the adhesive layer surface of the test piece is covered with the copper foil of the adherend. Stick to the surface. At this time, a region of 25 mm in width and 25 mm in length in the central portion of the test piece is attached to the surface of the copper foil of the adherend. Bonding is performed by reciprocating a roller with a weight of 100 g twice. Moreover, at this time, if the adhesive tape for semiconductor processing has a separator, the separator may be peeled off to expose the adhesive layer. Next, as shown in FIGS. 4A and 4B, both ends of the test piece in the longitudinal direction are fixed to a metal frame so that the adherend faces downward and the test piece is horizontal. The metal frame is not particularly limited as long as it does not deform due to the weight of the test piece and the adherend and allows the test piece to be attached. SUS plate can be used. In addition, as a method for fixing both ends of the test piece to the metal frame in the longitudinal direction, for example, the test piece may be fixed to the metal frame by the adhesive force of the adhesive tape for semiconductor processing itself. If the adhesive strength of the tape is low, a fastener such as a clip may be used to fix the test piece to the metal frame.

In the step (4), as shown in FIG. 5, the adherend is suspended so that the metal frame is horizontal. Specifically, by lifting the metal frame 54 until the metal frame 54 reaches a height of 120 mm, the adherend 51 can be suspended in the air so that the metal frame 54 is horizontal. Also, the energy ray to be blocked is an energy ray capable of curing the energy ray-curable adhesive layer, and is appropriately selected according to the type of the adhesive layer. Energy rays will be described later.

Further, in the step (4), the adherend as described above is stored in a suspended state for three days. At this time, the test time is 0 when the adherend is suspended in the air. Then, it is stored for 3 days from the start of the test.

Since the adhesive tape for semiconductor processing is attached to the adherend during the processing step, the adhesive tape for semiconductor processing is in contact with the adherend for a long time. Therefore, in the above step (4), the storage conditions are set to standard temperature and humidity, and the storage period is set to be slightly longer.

In the step (5), for example, as shown in FIG. 5, in the bonding region 55, the distance d by which the test piece (adhesive tape for semiconductor processing 10) is separated from the adherend 51 is measured. The distance d at which the test piece (adhesive tape for semiconductor processing 10) is separated from the adherend 51 refers to the distance from the end of the bonded region 55 in the longitudinal direction of the test piece (adhesive tape for semiconductor processing 10). . Moreover, the peeling distance means the maximum distance among the distances d at which the test piece (adhesive tape 10 for semiconductor processing) is peeled from the adherend 51 .

Means for controlling the peel distance include, for example, a method of adjusting the hardness of the base material, a method of adjusting the hardness of the adhesive layer, a method of adjusting the hardness of the entire adhesive tape for semiconductor processing, and a method of adjusting the adhesiveness of the adhesive layer. A method of adjusting the force and the like can be mentioned. For example, if the substrate is soft, the peel distance tends to be small, and if the substrate is hard, the peel distance tends to be large. Further, for example, if the adhesive layer is soft, the peel distance tends to be large, and if the adhesive layer is hard, the peel distance tends to be small. Further, for example, if the adhesive tape for semiconductor processing is soft, the peeling distance tends to be small, and if the adhesive tape for semiconductor processing is hard, the peeling distance tends to be large. Further, for example, when the adhesive strength of the adhesive layer is high, the peel distance tends to be short, and when the adhesive strength of the adhesive layer is low, the peel distance tends to be long. Specifically, it is preferable to control the peel distance by appropriately adjusting the hardness of the substrate, the hardness of the adhesive layer, the hardness of the entire adhesive tape for semiconductor processing, and the adhesive strength of the adhesive layer.

Moreover, in the method of adjusting the hardness of the substrate, the hardness of the substrate can be evaluated, for example, by the Young's modulus of the substrate.

In addition, in the method of adjusting the hardness of the adhesive layer, the hardness of the adhesive layer can be evaluated, for example, by the elastic modulus of the adhesive layer.

In the method of adjusting the hardness of the entire adhesive tape for semiconductor processing, the hardness of the entire adhesive tape for semiconductor processing can be evaluated, for example, by the Young's modulus of the adhesive tape for semiconductor processing.

The Young's modulus of the adhesive tape for semiconductor processing of the present disclosure is, for example, preferably 50 MPa or more and 1000 MPa or less, more preferably 70 MPa or more and 700 MPa or less, and even more preferably 100 MPa or more and 500 MPa or less. By setting the Young's modulus of the pressure-sensitive adhesive tape for semiconductor processing to a predetermined value or less, the peel distance can be reduced. On the other hand, if the Young's modulus of the pressure-sensitive adhesive tape for semiconductor processing is too low, the pressure-sensitive adhesive tape for semiconductor processing will become extremely soft, and there is a possibility that adhesive residue will easily occur during peeling.

Here, the Young's modulus of the adhesive tape for semiconductor processing can be measured according to JIS K7127. Specific measurement conditions are shown below.
・ Specimen: Specimen type 5
・Distance between chucks: 60mm
・ Tensile speed: 100mm/min
As a tensile tester, for example, "Tensilon RTF1150" manufactured by A&D Co., Ltd. can be used.

In addition, in the adhesive tape for semiconductor processing of the present disclosure, the adhesive strength to a copper plate is, for example, preferably 5.0 N/25 mm or more, more preferably 7.5 N/25 mm or more, and 10.0 N/ More preferably, it is 25 mm or more. When the adhesive strength to the copper plate is within the above range, the adherend can be sufficiently fixed to the adhesive tape for semiconductor processing until the energy beam is irradiated. On the other hand, the adhesion to the copper plate is, for example, 5.0 N/25 mm or less.

Here, the adhesive strength to the copper plate is measured by JIS Z0237: 2009 (adhesive tape/adhesive sheet test method) test method method 1 (temperature 23 ° C humidity 50% RH, tape and sheet at 180 ° to the stainless steel test plate. Peel off test method), using a copper plate instead of a stainless steel test plate, peeling it in the length direction of the test piece under the conditions of a width of 25 mm, a peeling angle of 180 °, and a peeling speed of 300 mm / min. be able to. As the copper plate, a rolled copper foil “RCF-T5B” with a thickness of 35 μm manufactured by Fukuda Metal Foil & Powder Co., Ltd. was used. It is placed on a SUS plate with a thickness of 150 mm, and the entire surface of the rolled copper foil is fixed to the SUS plate via double-sided tape or the like.

In addition, in the adhesive tape for semiconductor processing of the present disclosure, the adhesive strength to a polyethylene terephthalate (PET) plate is, for example, preferably 10.0 N/25 mm or less, more preferably 8.0 N/25 mm or less. , 6.0 N/25 mm or less. When the adhesive strength to the PET plate is within the above range, the reworkability (removability) to the PET plate before irradiation with the energy beam can be improved. Here, the adhesive tape for semiconductor processing is attached to a ring-shaped frame, and a wafer having a circuit formed thereon is fixed on the adhesive tape for semiconductor processing. A ring-shaped frame, a container for housing a wafer with a frame in which the wafer is fixed to the ring-shaped frame via an adhesive tape for semiconductor processing, and a jig in a semiconductor manufacturing process are made of resin, for example. Sometimes. Therefore, when the ring-shaped frame is made of, for example, resin, the adhesive strength to the PET plate is within the above range, which causes an adhesion failure when the adhesive tape for semiconductor processing is applied to the ring-shaped frame. Even if the adhesive tape for semiconductor processing is stuck, it is possible to reapply it. Further, when the container and the jig are made of resin, for example, the adhesion to the PET plate is within the above range, so that the adhesive tape for semiconductor processing of the framed wafer sticks to the container and the jig. Even in this case, the adhesive tape for semiconductor processing of the framed wafer can be easily peeled off from the container or the jig. On the other hand, the adhesive strength to the PET plate is, for example, 1.0 N/25 mm or more, may be 3.0 N/25 mm or more, or may be 5.0 N/25 mm or more. When the adhesive force to the PET plate is within the above range, the adhesiveness between the substrate and the adhesive layer can be maintained.

Here, the adhesive force to the PET plate is measured by method 1 (temperature 23°C, humidity 50%, tape and sheet pulled at 180° against a stainless steel test plate) in JIS Z0237: 2009 (adhesive tape/adhesive sheet test method). peeling test method), using a PET plate instead of a stainless steel test plate, peeling it in the length direction of the test piece under the conditions of a width of 25 mm, a peeling angle of 180 °, and a peeling speed of 300 mm / min. be able to. At this time, the adhesive force is measured one hour after the adhesive tape for semiconductor processing is attached to the PET plate. As the PET plate, a PET resin plate "Sunroid Pet Ace EPG 100 (clear)" manufactured by Sumitomo Bakelite Co., Ltd. having a thickness of 2.0 mm, a width of 100 mm, and a length of 150 mm can be used. As the PET plate, a polyester film "Lumirror #50-S10" manufactured by Toray Industries, Inc. can be used. The entire surface should be fixed with double-sided tape or the like.

In addition, in the adhesive tape for semiconductor processing of the present disclosure, the adhesive strength to the SUS plate is, for example, preferably 4.5 N/25 mm or more, more preferably 6.0 N/25 mm or more, and 7.0 N /25 mm or more is more preferable, and 7.5 N/25 mm or more is particularly preferable. When the adhesive strength to the SUS plate is within the above range, the adherend can be sufficiently fixed to the adhesive tape for semiconductor processing until the energy beam is irradiated. On the other hand, although the upper limit of the adhesive strength to the SUS plate is not particularly limited, it is preferably 30.0 N/25 mm or less, for example.

Here, the adhesive strength to the SUS plate is measured by JIS Z0237: 2009 (adhesive tape/adhesive sheet test method) test method method 1 (temperature 23 ° C humidity 50% RH, tape and sheet at 180 ° to the stainless steel test plate. peeling off test method), and peeled off in the longitudinal direction of the test piece under conditions of a width of 25 mm, a peeling angle of 180°, and a peeling speed of 300 mm/min. As the SUS plate, a SUS304, BA surface finish, 1.5 mm thick, 100 mm wide, and 150 mm long SUS plate can be used.

In addition, in the adhesive tape for semiconductor processing of the present disclosure, the adhesive force to the SUS plate after energy beam irradiation is, for example, preferably 2.0 N/25 mm or less, more preferably 1.5 N/25 mm or less. preferable. When the adhesive strength to the SUS plate after irradiation with energy rays is within the above range, the chip can be easily peeled off from the adhesive tape for semiconductor processing after irradiation with energy rays. On the other hand, the lower limit of the adhesive strength to the SUS plate after the energy beam irradiation is not particularly limited, but can be, for example, 0.01 N/25 mm or more.

Here, the adhesive strength to the SUS plate after energy beam irradiation can be measured by the following method. First, the adhesive layer of the adhesive tape for semiconductor processing is irradiated with energy rays to be cured. At this time, for example, the energy beam can be irradiated from the substrate side surface of the pressure-sensitive adhesive tape for semiconductor processing. Next, according to JIS Z0237: 2009 (adhesive tape/adhesive sheet test method) test method method 1 (temperature 23 ° C humidity 50% RH, tape and sheet are peeled off at 180 ° against a stainless steel test plate). By peeling the test piece in the longitudinal direction under conditions of a width of 25 mm, a peeling angle of 180°, and a peeling speed of 300 mm/min, the adhesive force to the SUS plate after energy beam irradiation can be measured. As the SUS plate, a SUS304, BA surface finish, 1.5 mm thick, 100 mm wide, and 150 mm long SUS plate can be used.

In addition, in the adhesive tape for semiconductor processing of the present disclosure, the ball number in the inclined ball tack test is preferably 5 or less, more preferably 4 or less, and even more preferably 3 or less. Here, when the tackiness of the adhesive tape for semiconductor processing is low, the adhesive layer tends to be hard, and when the tackiness of the adhesive tape for semiconductor processing is high, the adhesive layer tends to be soft. In the present disclosure, as described above, the peel distance can be reduced by softening the adhesive layer. , there is a possibility that the adhesive tape for semiconductor processing may be easily lifted or peeled off from the end. In addition, there is a possibility that adhesive residue is likely to occur during peeling. Therefore, the peeling distance can be reduced by moderately reducing the tackiness of the adhesive tape for semiconductor processing and by making the adhesive tape for semiconductor processing moderately hard. In addition, it is possible to suppress adhesive residue at the time of peeling.

Here, the inclined ball tack test is conducted in accordance with JIS Z0237:2009 under conditions of an inclination angle of 30°, a temperature of 23°C, and a humidity of 50% RH. Balls with diameters from 1/32 inch to 1 inch are used. Then, when a ball is rolled on the surface of the adhesive layer of the adhesive tape for semiconductor processing, the number of the largest ball out of the balls that stop on the surface of the adhesive layer of the adhesive tape for semiconductor processing is evaluated. The ball number is calculated by multiplying the diameter of the ball by 32. The smaller the ball number, the lower the tackiness.

2. Adhesive Layer The adhesive layer in the present disclosure is a member that is arranged on one surface of the substrate and has energy ray curability. The energy ray-curable adhesive layer is cured by irradiation with an energy ray, thereby reducing its adhesive strength. In the dicing process, the energy ray-curable adhesive layer can fix a wafer or divided chips by its initial adhesive force. In addition, in the pick-up process or the transfer process, the energy ray-curable adhesive layer is cured by irradiating it with an energy ray to reduce the adhesive force and improve the releasability. can.

Examples of energy rays include light rays such as far ultraviolet rays, ultraviolet rays, near ultraviolet rays and infrared rays, electromagnetic waves such as X-rays and γ-rays, electron beams, proton beams and neutron beams. Among them, from the viewpoint of versatility, ultraviolet rays and electron beams are preferred, and ultraviolet rays are more preferred.

The storage modulus of the adhesive layer at 25° C. is, for example, preferably 0.1 MPa or more, more preferably 0.5 MPa or more, and even more preferably 1.0 MPa or more. Here, when the elastic modulus of the adhesive layer is high, the adhesive layer tends to be hard, and when the elastic modulus of the adhesive layer is low, the adhesive layer tends to be soft. In the present disclosure, as described above, the peel distance can be reduced by softening the adhesive layer. , there is a possibility that the adhesive tape for semiconductor processing may be easily lifted or peeled off from the end. In addition, there is a possibility that adhesive residue is likely to occur during peeling. Therefore, by appropriately increasing the elastic modulus of the adhesive layer and making the adhesive layer appropriately hard, the peel distance can be reduced. In addition, it is possible to suppress adhesive residue at the time of peeling. On the other hand, the storage elastic modulus of the adhesive layer at 25° C. is, for example, preferably 100.0 MPa or less, more preferably 50.0 MPa or less. If the storage modulus is too high, the pressure-sensitive adhesive layer may become too hard, resulting in an increase in the peel distance or a decrease in adhesion to adherends.

Here, the storage modulus is a value measured by a dynamic viscoelasticity measuring device (DMA). When measuring the storage modulus of the adhesive layer with a dynamic viscoelasticity measuring device (DMA), by winding the adhesive layer, a cylindrical sample having a diameter of 5 mm or more and 10 mm or less and a height of about 5 mm or more and 10 mm or less. do. First, the cylindrical measurement sample is attached between compression jigs (parallel plates of φ8 mm) of a dynamic viscoelasticity measuring device. Next, dynamic viscoelasticity measurement is performed by applying a compressive load under the conditions of temperature: -50°C or higher and 150°C or lower, temperature increase rate: 10°C/min, and frequency of 1.0 Hz. As the dynamic viscoelasticity measuring device, for example, RSA-3 manufactured by TA Instruments Japan Co., Ltd. can be used.

The storage elastic modulus of the adhesive layer can be appropriately adjusted according to the composition, compounding ratio, etc. of the components contained in the adhesive layer.

The adhesive layer is not particularly limited as long as it satisfies the above adhesive strength, and for example, it can contain at least a resin (adhesive main agent) and an energy ray-curable compound. When the adhesive layer contains an energy ray-curable compound, the energy ray-curable compound can be cured by irradiation with energy rays, thereby reducing the adhesive force, and at this time, the cohesive force increases, so the peeling becomes easier.

(1) Resin (base adhesive)
Examples of the resin (adhesive main agent) include resins generally used as main agents for adhesives, such as acrylic resins, polyester resins, polyimide resins, and silicone resins. Among them, acrylic resins are preferable. By using an acrylic resin, adhesive residue on the adherend can be reduced.

Therefore, the adhesive layer preferably contains at least an acrylic resin, an energy ray-curable compound, and a cross-linking agent. In the adhesive layer, the acrylic resin usually exists as a crosslinked product obtained by cross-linking the acrylic resins with a crosslinking agent, but the acrylic resin alone may be contained together with the crosslinked product.

(acrylic resin)
The acrylic resin is not particularly limited, and for example, a (meth)acrylic acid ester polymer obtained by homopolymerizing a (meth)acrylic acid ester, a (meth)acrylic acid ester as a main component, and a (meth)acrylic acid ester (Meth)acrylic acid ester copolymers obtained by copolymerizing with other monomers can be mentioned. Among them, (meth)acrylic acid ester copolymers are preferred. Specific examples of (meth)acrylic acid esters and other monomers include those disclosed in JP-A-2012-31316. Other monomers can be used alone or in combination of two or more. The term "main component" as used herein means that the copolymerization ratio is 51% by mass or more, preferably 65% by mass or more.

Among them, the acrylic resin is a (meth)acrylic acid ester copolymer obtained by copolymerizing a (meth)acrylic acid ester as a main component and a copolymerizable hydroxyl group-containing monomer with the above (meth)acrylic acid ester. , or (meth) acrylic acid ester as a main component, the (meth) acrylic acid ester copolymer obtained by copolymerization with the hydroxyl group-containing monomer and carboxyl group-containing monomer copolymerizable with the (meth) acrylic acid ester It can be used preferably.

In this specification, (meth)acrylic acid refers to at least one of acrylic acid and methacrylic acid.

The copolymerizable hydroxyl group-containing monomer and carboxyl group-containing monomer are not particularly limited, and for example, hydroxyl group-containing monomers and carboxyl group-containing monomers disclosed in JP-A-2012-31316 are used.

The weight average molecular weight of the acrylic resin is, for example, preferably 200,000 or more and 1,000,000 or less, more preferably 200,000 or more and 800,000 or less. By setting the weight-average molecular weight of the acrylic resin within the above range, it is possible to reduce adhesive residue and contamination on the adherend.

Here, in this specification, the weight average molecular weight is a polystyrene conversion value when measured by gel permeation chromatography (GPC). The weight average molecular weight is, for example, HLC-8220GPC manufactured by Tosoh Corporation as a measuring device, TSKGEL-SUPERMULTIPORE-HZ-M manufactured by Tosoh Corporation as a column, THF as a solvent, and molecular weights of 1050 and 5970 as standards. It can be measured by using standard polystyrene of 18100, 37900, 96400, 706000.

Further, when the acrylic resin is a (meth)acrylic acid ester copolymer of a hydroxyl group-containing monomer copolymerizable with a (meth)acrylic acid ester and a carboxyl group-containing monomer, the hydroxyl group-containing monomer and the carboxyl group-containing The mass ratio to the monomer is preferably, for example, 51:49 to 100:0, more preferably 75:25 to 100:0. If the mass ratio of each monomer is within the above range, an effective decrease in adhesive strength due to energy beam irradiation can be expected, and the occurrence of adhesive residue can be suppressed.

Moreover, the acrylic resin may have energy ray-curable properties, and may have, for example, an energy ray-curable functional group in its side chain. The energy ray-curable functional group preferably has, for example, an ethylenically unsaturated bond, and specific examples thereof include (meth)acryloyl groups, vinyl groups, and allyl groups.

(2) Energy ray-curable compound The energy ray-curable compound is not particularly limited as long as it polymerizes upon exposure to energy rays, and examples thereof include compounds having an energy ray-curable functional group.

Energy ray-curable compounds include, for example, energy ray-curable monomers, energy ray-curable oligomers, and energy ray-curable polymers. Note that the energy ray-curable polymer is a polymer different from the resin (main adhesive agent) described above. Among them, energy ray-curable oligomers are preferable from the viewpoint of the balance of adhesive strength before and after energy ray irradiation. Also, an energy ray-curable monomer, an energy ray-curable oligomer, and an energy ray-curable polymer may be used in combination. For example, when an energy ray-curable monomer is used in addition to an energy ray-curable oligomer, the adhesive layer is cured by three-dimensional cross-linking when irradiated with an energy ray to reduce the adhesive force and increase the cohesive force. can be prevented from being transferred to the chip side.

Examples of energy ray-curable compounds include radically polymerizable compounds, cationically polymerizable compounds, and anionically polymerizable compounds. Among them, radically polymerizable compounds are preferred. It has a high curing speed, can be selected from a wide variety of compounds, and can easily control physical properties such as adhesive strength before and after energy ray irradiation.

In the energy ray-curable compound, the number of energy ray-curable functional groups per molecule is preferably 2 or more, more preferably 3 or more per molecule, and 4 or more. is more preferred. When the number of energy ray-curable functional groups is within the above range, the crosslink density of the pressure-sensitive adhesive layer after energy ray irradiation is sufficient, and desired peelability can be achieved. In addition, it is possible to suppress the occurrence of contamination and adhesive residue due to a decrease in cohesive strength. Moreover, the upper limit of the number of energy ray-curable functional groups is not particularly limited.

The energy ray-curable compound is preferably a radically polymerizable oligomer, more preferably a radically polymerizable polyfunctional oligomer. Radically polymerizable oligomers include, for example, those disclosed in JP-A-2012-31316.

Radically polymerizable oligomers and radically polymerizable monomers may be used as the energy ray-curable compound, and among others, radically polymerizable polyfunctional oligomers and radically polymerizable polyfunctional monomers may be used. Examples of the radically polymerizable monomer include those disclosed in JP-A-2010-173091.

Examples of energy ray-curable compounds include (meth)acrylate-based monomers, (meth)acrylate-based oligomers, and (meth)acrylate-based polymers. As the energy ray-curable compound, for example, urethane (meth)acrylate, polyester (meth)acrylate, epoxy (meth)acrylate, etc. can also be used.

Moreover, a commercial item may be used for the energy ray-curable compound. For example, Mitsubishi Chemical Corp. urethane acrylate "Shikou UV7620EA (molecular weight: 4100)"; 26000)”, “Artresin UN-951SC (molecular weight: 12500)”, “Artresin UN-952 (molecular weight: 6500-9500)”, “Artresin UN-953 (molecular weight: 14000-40000)”, “Artresin UN-954 (molecular weight: 4200)", "Artresin H-219 (molecular weight: 25000-50000)", "Artresin H-315M (molecular weight: 6600)", "Artresin H-417M (molecular weight: 4000)" ; Acrylic urethane polymer "8BR-600 (molecular weight: 100000)" manufactured by Taisei Fine Chemical Co., Ltd.; Polymer acrylate "Unidic V-6850" manufactured by DIC; Acrylic polymer "SMP-250AP (molecular weight: 20000- 30000)”, “SMP-360A (molecular weight: 20000 to 30000)”; and acrylic resin acrylate “HA7975” manufactured by Showa Denko Materials.

The energy ray-curable compounds may be used alone or in combination of two or more.

Although the weight average molecular weight of the energy ray-curable compound is not particularly limited, it is preferably 50,000 or less, more preferably 35,000, and even more preferably 20,000 or less. If the weight-average molecular weight of the energy ray-curable compound is within the above range, it exhibits sufficient compatibility with the acrylic resin (adhesive main agent), and the adhesive layer exhibits the desired adhesive strength before irradiation with the energy ray. After irradiation, the generation of adhesive residue is suppressed, and the film can be easily peeled off. On the other hand, the weight average molecular weight of the energy ray-curable resin composition can be, for example, 500 or more.

The content of the energy ray-curable compound is, for example, preferably 5 parts by mass or more and 150 parts by mass or less, and preferably 20 parts by mass or more and 100 parts by mass or less with respect to 100 parts by mass of the resin (adhesive main agent). More preferably, it is 50 parts by mass or more and 80 parts by mass or less. When the content of the energy ray-curable compound is within the above range, the crosslink density of the adhesive layer after energy ray irradiation is sufficient, and desired peelability can be achieved. In addition, it is possible to suppress the occurrence of contamination and adhesive residue due to a decrease in cohesive strength.

(3) Polymerization Initiator The adhesive layer can contain a polymerization initiator in addition to the resin (main adhesive) and the energy ray-curable compound.

A general photopolymerization initiator can be used as the polymerization initiator. Specific examples include acetophenones, benzophenones, α-hydroxyketones, benzyl methyl ketals, α-aminoketones, and bisacylphosphine oxides. When urethane acrylate is used as the energy ray-curable compound, the polymerization initiator is preferably a bisacylphosphine-based polymerization initiator. Since this polymerization initiator has heat resistance, when the adhesive composition is applied to the substrate and the energy beam is irradiated, even if the energy beam is irradiated through the substrate, the energy beam can be reliably Curable compounds can be cured.

The polymerization initiator preferably has absorption at a wavelength of 230 nm or more, and preferably has absorption at a wavelength of 300 nm or more and 400 nm or less. Such a polymerization initiator can absorb wide energy rays with a wavelength of 300 nm or more and efficiently generate active species that induce a polymerization reaction of the energy ray-curable compound. Therefore, the energy ray-curable compound can be efficiently cured even with a small amount of energy ray irradiation, and can be easily peeled off. As will be described later, a resin or the like can be used as the base material, and many resins absorb energy rays with a wavelength of up to about 300 nm, but transmit energy rays with a wavelength of about 300 nm or more. Furthermore, in recent years, LED lamps with a wavelength of 300 nm or more are often used in energy beam irradiation devices. Therefore, by using a polymerization initiator having absorption at a wavelength of 230 nm or more, the energy ray-curable compound can be cured using the energy ray that has passed through the substrate.

The content of the polymerization initiator is, for example, preferably 0.01 parts by mass or more and 10 parts by mass or less with respect to a total of 100 parts by mass of the resin (main adhesive) and the energy ray-curable compound, and 0.5 parts by mass. Part or more and 6 parts by mass or less is more preferable. If the content of the polymerization initiator is less than the above range, the polymerization reaction of the energy ray-curable compound will not occur sufficiently, and the adhesive strength of the adhesive layer after energy ray irradiation will become excessively high, making it difficult to achieve peelability. Sometimes you can't. On the other hand, if the content of the polymerization initiator exceeds the above range, the energy beams may reach only the vicinity of the energy beam irradiation surface, resulting in insufficient curing of the adhesive layer. In addition, the cohesive strength is lowered, which may cause contamination and adhesive residue.

(4) Cross-linking agent The adhesive layer can contain a cross-linking agent in addition to the resin (main adhesive agent) and the energy ray-curable compound.

The cross-linking agent is not particularly limited as long as it cross-links at least between the resins (adhesive main agent), and can be appropriately selected according to the type of the resin (adhesive main agent). , epoxy-based cross-linking agents, metal chelate-based cross-linking agents, and the like. Specific examples of isocyanate-based cross-linking agents and epoxy-based cross-linking agents include those disclosed in JP-A-2012-31316. A crosslinking agent can be used individually or in combination of 2 or more types.

The content of the cross-linking agent can be appropriately set according to the type of the cross-linking agent. and more preferably 0.01 parts by mass or more and 10 parts by mass or less. If the content of the cross-linking agent is less than the above range, the adhesiveness may be poor, or cohesive failure may occur in the adhesive layer when the chip is peeled off or transferred, resulting in adhesive residue. On the other hand, if the content of the cross-linking agent exceeds the above range, the cross-linking agent remains as an unreacted monomer in the adhesive layer after irradiation with the energy beam, causing contamination and adhesive residue due to a decrease in cohesive strength. Sometimes.

(5) Additives The adhesive layer may contain various additives as necessary. Additives include, for example, tackifiers, antistatic agents, plasticizers, silane coupling agents, metal chelating agents, surfactants, antioxidants, ultraviolet absorbers, colorants, preservatives, antifoaming agents, wetting agents, property modifiers, adhesion modifiers, and the like.

In addition, the adhesive layer may contain an adhesive force modifier as described above. The adhesive strength modifier can be used, for example, for the purpose of adjusting the releasability from the separator and the tackiness. Examples of adhesive strength modifiers include acrylic block copolymers and polyester resins. Commercially available acrylic block copolymers and polyester resins may be used. Specific examples of acrylic block copolymers include Clarity series manufactured by Kuraray Co., Ltd. manufactured by NANOSTRENGTH (for example, "M22", "M22N", "M52N", etc.). Examples of polyester resins include Byron series manufactured by Toyobo Co., Ltd. (e.g., "Byron 200", "Byron 600", etc.), and Elitel series manufactured by Unitika Co., Ltd. ("Elitel UE3210", "Elitel UE9200", etc.). mentioned.

(6) Thickness of Adhesive Layer and Method of Forming The thickness of the adhesive layer may be any thickness that provides sufficient adhesive strength and allows energy rays to penetrate to the inside, for example, 3 μm. 50 μm or more, preferably 5 μm or more and 40 μm or less.

As a method for forming the adhesive layer, for example, a method of applying an adhesive composition on a substrate, a method of applying an adhesive composition on a separator to form an adhesive layer, and a method of bonding the adhesive layer and the substrate together. is mentioned.

3. Substrate The substrate in the present disclosure is a member that supports the adhesive layer.

The substrate is not particularly limited, but in the pick-up process or the transfer process, the adhesive layer can be cured by irradiating energy rays from the substrate side of the adhesive tape for semiconductor processing, thereby reducing the adhesive strength of the adhesive layer. Since it is preferable, the substrate is preferably one that transmits energy rays.

Preferably, the substrate is expandable. Specifically, the Young's modulus of the substrate is, for example, preferably 1000 MPa or less, more preferably 700 MPa or less, and even more preferably 500 MPa or less. If the Young's modulus of the substrate is within the above range, the expandability of the substrate can be improved. In addition, the Young's modulus of the substrate is, for example, preferably 50 MPa or higher, more preferably 70 MPa or higher, and even more preferably 100 MPa or higher. If the Young's modulus of the base material is too low, the base material becomes extremely soft, which may make it difficult to spread the pressure-sensitive adhesive tape for semiconductor processing uniformly.

Here, the Young's modulus of the substrate can be measured according to JIS K7127. Specific measurement conditions are shown below.
・ Specimen: Specimen type 5
・Distance between chucks: 60mm
・ Tensile speed: 100mm/min
As a tensile tester, for example, "Tensilon RTF1150" manufactured by A&D Co., Ltd. can be used.

The material of the substrate preferably satisfies the above properties, and examples thereof include low-density polyethylene, high-density polyethylene, polypropylene, polybutene, polymethylpentene, polybutadiene, ethylene-vinyl acetate copolymer, ionomer resin, and ethylene. Olefin resins such as (meth)acrylic acid copolymers and ethylene (meth)acrylic acid ester copolymers; vinyl chloride resins such as polyvinyl chloride and vinyl chloride copolymers; polyester resins such as polyethylene terephthalate and polybutylene terephthalate ; urethane resin; polystyrene resin; polycarbonate resin; Examples of materials for the substrate include thermoplastic elastomers such as olefin elastomers, vinyl chloride elastomers, polyester elastomers, styrene elastomers, urethane elastomers, acrylic elastomers, and amide elastomers; isoprene rubber, butadiene rubber. , styrene-butadiene rubber, chloroprene rubber, acrylonitrile-butadiene rubber, butyl rubber, halogenated butyl rubber, acrylic rubber, urethane rubber, and polysulfide rubber. These may be used singly or in combination of two or more.

Among them, olefin resins or vinyl chloride resins are preferred, and vinyl chloride resins are more preferred. That is, the substrate preferably contains an olefin resin or a vinyl chloride resin, and more preferably contains a vinyl chloride resin. Since the vinyl chloride resin is softened by adding a plasticizer, the use of a so-called soft vinyl chloride resin enables the substrate to have no yield point as will be described later.

Examples of vinyl chloride resins include polyvinyl chloride, chlorinated polyvinyl chloride, polyvinylidene chloride, chlorinated polyethylene, vinyl chloride-vinyl acetate copolymer, vinyl chloride-ethylene copolymer, and vinyl chloride-propylene copolymer. , vinyl chloride-styrene copolymer, vinyl chloride-isobutylene copolymer, vinyl chloride-vinylidene chloride copolymer, vinyl chloride-styrene-maleic anhydride terpolymer, vinyl chloride-styrene-acrylonitrile terpolymer Copolymer, vinyl chloride-butadiene copolymer, vinyl chloride-isoprene copolymer, vinyl chloride-chlorinated propylene copolymer, vinyl chloride-vinylidene chloride-vinyl acetate terpolymer, vinyl chloride-maleic acid ester copolymer Chlorine-containing resins such as coalescence, vinyl chloride-methacrylate copolymers, vinyl chloride-acrylonitrile copolymers, vinyl chloride-various vinyl ether copolymers; mixtures of these chlorine-containing resins; Mixtures with chlorine-free resins, block copolymers, graft copolymers, and the like can be mentioned. Other chlorine-free resins include, for example, acrylonitrile-styrene copolymer, acrylonitrile-styrene-butadiene terpolymer, ethylene-vinyl acetate copolymer, ethylene-ethyl (meth)acrylate copolymer, polyester etc.

The substrate optionally contains various additives such as plasticizers, fillers, antioxidants, light stabilizers, antistatic agents, lubricants, dispersants, flame retardants, colorants, and the like. good too.

The substrate may be, for example, a single layer or multiple layers.

Preferably, the substrate does not have a yield point. That is, the substrate preferably exhibits elastic deformation in the stress-strain curve. A stress-strain curve is a relationship curve between stress and strain obtained by a tensile test, and is drawn with strain (%) on the horizontal axis and stress (MPa) on the vertical axis. The area up to the yield point on the stress-strain curve can be regarded as the elastic deformation area, and the area after the yield point on the stress-strain curve can be regarded as the plastic deformation area. Therefore, if the substrate does not have a yield point, it can be said that the substrate exhibits elastic deformation. When the substrate does not have a yield point, the pressure-sensitive adhesive tape for semiconductor processing can be uniformly expanded in the expanding step and the picking-up step. Further, when the base material does not have a yield point, the base material does not lose its restorability even if it is stretched, so that the semiconductor can be easily processed.

Here, "yield" refers to a phenomenon in which, as seen in the stress-strain curve, when the stress acting on an object exceeds its elastic limit, deformation progresses gradually without an increase in stress. "Point" refers to the point at the maximum stress value for elastic behavior.

The presence or absence of a yield point can be confirmed by the following method. Tensile tests are performed on the base material in the MD direction and the TD direction respectively, the stress and strain until the base material breaks are measured, and the strain is plotted on the horizontal axis and the stress is plotted on the vertical axis. At that time, it has a yield point when the stress value changes from a positive value to zero or a negative value, and a yield point when the stress value does not change from a positive value to zero or a negative value. Suppose we have no points. A tensile test can be performed according to JIS K7127. As a tensile tester, for example, "Tensilon RTF1150" manufactured by A&D Co., Ltd. can be used. The base material preferably does not have a yield point in both the MD and TD tensile tests.

The adhesive layer side surface of the base material may be surface-treated in order to improve the adhesiveness with the adhesive layer. The surface treatment is not particularly limited, and examples thereof include corona treatment, plasma treatment, ozone treatment, flame treatment, primer treatment, alkali treatment and the like.

The thickness of the substrate is not particularly limited, and may be, for example, 20 μm or more and 500 μm or less, may be 40 μm or more and 350 μm or less, or may be 50 μm or more and 200 μm or less. If the thickness of the substrate is within the above range, the substrate can be easily expanded and has sufficient strength to prevent breakage.

4. Other Configurations The adhesive tape for semiconductor processing of the present disclosure can have other configurations, if necessary, in addition to the substrate and adhesive layer described above.

The adhesive tape for semiconductor processing of the present disclosure may have a separator on the surface of the adhesive layer opposite to the substrate. The separator can protect the adhesive layer.

Further, the adhesive tape for semiconductor processing of the present disclosure may have a primer layer between the substrate and the adhesive layer. The primer layer can enhance the adhesion between the substrate and the adhesive layer.

5. Application The adhesive tape for semiconductor processing of the present disclosure can be suitably used as a dicing tape.

Note that the present disclosure is not limited to the above embodiments. The above embodiment is an example, and any device that has substantially the same configuration as the technical idea described in the claims of the present disclosure and produces the same effect is the present invention. It is included in the technical scope of the disclosure.

Examples and comparative examples are given below to further illustrate the present disclosure.

[material]
Materials used for the pressure-sensitive adhesive composition are shown below.
・ Adhesive main agent A (acrylic acid ester copolymer, weight average molecular weight 800,000)
・ Adhesive main agent B (acrylic acid ester copolymer, weight average molecular weight 200,000)
・Urethane acrylate A (ultraviolet curable compound, 9 functional groups, molecular weight 4100)
・Urethane acrylate B (ultraviolet curable compound, hexafunctional, molecular weight 4200)
・Urethane acrylate C (ultraviolet curable compound, 10-functional, molecular weight 2000)
・Urethane acrylate D (ultraviolet curable compound, 9-15 functional, molecular weight 20000)
・ Urethane acrylate E (ultraviolet curable compound, bifunctional, molecular weight 3000)
- Urethane acrylate F (ultraviolet curable compound, double bond equivalent weight 2000 g/mol, molecular weight 15000)
・Polymerization initiator (acylphosphine oxide photopolymerization initiator, bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide)
・Crosslinking agent A (epoxy curing agent, N,N,N',N'-tetraglycidyl-m-xylylenediamine)
- Crosslinking agent B: (metal chelate curing agent, aluminum trisacetylacetonate)
- Crosslinking agent C: (isocyanate curing agent, toluylene diisocyanate adduct of trimethylolpropane)
・ Adhesion adjuster A (methyl methacrylate/n-butyl acrylate copolymer, n-butyl acrylate content: 50% by mass)
- Adhesion adjuster B (polyacrylate resin, glass transition temperature (Tg): 20°C, hydroxyl value: 35 mgKOH/g, mass average molecular weight: 25,000)

[Example 1]
A resin composition containing 70 parts by mass of a vinyl chloride resin, 25 parts by mass of a plasticizer, and 0.3 parts by mass of nonylphenol was used as a base material, and a film was formed by a calendar method to form a polyvinyl chloride film having a thickness of 90 μm. A (PVC) film was produced.

Adhesive main agent A 100 parts by mass, urethane acrylate A 40 parts by mass, urethane acrylate B 30 parts by mass, cross-linking agent C 3.0 parts by mass, polymerization initiator 7 parts by mass, and adhesive force adjuster A 0.5 parts by mass were diluted with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) so that the solid content was 20%, and sufficiently dispersed to prepare an adhesive composition.

The pressure-sensitive adhesive composition was applied to a polyethylene terephthalate (PET) separator so that the thickness after drying was 20 μm, and dried in an oven at 110° C. for 3 minutes to form a pressure-sensitive adhesive layer.

Next, after laminating the base material on the adhesive layer, aging was performed at 50° C. for 3 days to prepare an adhesive tape for semiconductor processing.

[Example 2]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows.

100 parts by mass of adhesive main agent A, 40 parts by mass of urethane acrylate A, 15 parts by mass of urethane acrylate D, 15 parts by mass of urethane acrylate E, 0.05 parts by mass of cross-linking agent A, and 0.15 parts by mass of cross-linking agent B And, 7.0 parts by mass of a polymerization initiator and 0.5 parts by mass of an adhesive strength modifier A are diluted with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) so that the solid content is 20%, A pressure-sensitive adhesive composition was prepared by sufficiently dispersing.

[Example 3]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows.

100 parts by mass of adhesive main agent A, 70 parts by mass of urethane acrylate B, 3 parts by mass of cross-linking agent C, 7 parts by mass of polymerization initiator, and 0.5 parts by mass of adhesive force adjuster A were mixed with methyl ethyl ketone and toluene. The mixture was diluted with a solvent (mixing ratio 1:1) to a solid content of 20% and sufficiently dispersed to prepare an adhesive composition.

[Example 4]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows.

100 parts by mass of adhesive main agent A, 70 parts by mass of urethane acrylate D, 3 parts by mass of cross-linking agent C, 7 parts by mass of polymerization initiator, and 0.5 parts by mass of adhesive force adjuster A were mixed with methyl ethyl ketone and toluene. The mixture was diluted with a solvent (mixing ratio 1:1) to a solid content of 20% and sufficiently dispersed to prepare an adhesive composition.

[Example 5]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows.

100 parts by mass of adhesive main agent A, 40 parts by mass of urethane acrylate A, 15 parts by mass of urethane acrylate E, 15 parts by mass of urethane acrylate F, 0.05 parts by mass of cross-linking agent A, and 0.15 parts by mass of cross-linking agent B And, 7 parts by mass of a polymerization initiator and 0.5 parts by mass of an adhesive strength modifier A are diluted with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) so that the solid content is 20%, and sufficiently Dispersed to prepare an adhesive composition.

[Example 6]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows.

100 parts by mass of adhesive main agent A, 40 parts by mass of urethane acrylate A, 30 parts by mass of urethane acrylate B, 0.05 parts by mass of cross-linking agent A, 0.15 parts by mass of cross-linking agent B, and 7 parts by mass of polymerization initiator And 0.5 parts by mass of the adhesive strength adjusting agent A, diluted with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1: 1) so that the solid content is 20%, sufficiently dispersed, and the adhesive composition was prepared.

[Comparative Example 1]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows and the thickness of the substrate was 70 μm.

100 parts by mass of adhesive main agent A, 40 parts by mass of urethane acrylate A, 30 parts by mass of urethane acrylate B, 0.35 parts by mass of cross-linking agent A, 0.2 parts by mass of cross-linking agent B, and 7 parts by mass of polymerization initiator And 0.5 parts by mass of the adhesive strength adjusting agent A, diluted with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1: 1) so that the solid content is 20%, sufficiently dispersed, and the adhesive composition was prepared.

[Comparative Example 2]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows and the thickness of the substrate was 70 μm.

100 parts by mass of adhesive main agent A, 70 parts by mass of urethane acrylate A, 0.35 parts by mass of cross-linking agent A, 0.2 parts by mass of cross-linking agent B, 4.2 parts by mass of polymerization initiator, and an adhesive force adjuster 1.5 parts by mass of A was diluted with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) so that the solid content was 20%, and sufficiently dispersed to prepare a pressure-sensitive adhesive composition.

[Comparative Example 3]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the same pressure-sensitive adhesive composition as in Comparative Example 2 was used and the following base material was used.

100 parts by mass of adhesive main agent A, 70 parts by mass of urethane acrylate A, 0.35 parts by mass of cross-linking agent A, 0.2 parts by mass of cross-linking agent B, 4.2 parts by mass of polymerization initiator, and an adhesive force adjuster 1.5 parts by mass of A was diluted with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) so that the solid content was 20%, and sufficiently dispersed to prepare a pressure-sensitive adhesive composition.

A resin composition containing 70 parts by mass of a vinyl chloride resin, 40 parts by mass of a plasticizer, and 0.5 parts by mass of a stabilizer was used as a base material, and a film was formed by a casting method to a thickness of 90 μm. A polyvinyl chloride (PVC) film was made.

[Comparative Example 4]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows.

100 parts by mass of adhesive main agent A, 60 parts by mass of urethane acrylate A, 0.35 parts by mass of cross-linking agent A, 0.2 parts by mass of cross-linking agent B, 2.4 parts by mass of polymerization initiator, and an adhesive force adjuster 1 part by mass of A was diluted with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) so that the solid content was 20%, and sufficiently dispersed to prepare a pressure-sensitive adhesive composition.

[Comparative Example 5]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows.

Adhesive main agent A 100 parts by mass, urethane acrylate A 70 parts by mass, cross-linking agent A 0.35 parts by mass, cross-linking agent B 0.2 parts by mass, polymerization initiator 7 parts by mass, and adhesive force adjuster A 0 .5 parts by mass was diluted with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) so that the solid content was 20%, and sufficiently dispersed to prepare a pressure-sensitive adhesive composition.

[Comparative Example 6]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows and the following base material was used.

Adhesive main agent B 100 parts by mass, urethane acrylate C 50 parts by mass, cross-linking agent C 3.0 parts by mass, polymerization initiator 1.5 parts by mass, mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) to a solid content of 20% and sufficiently dispersed to prepare an adhesive composition.

A polyolefin (PO) film (“Esmer OES DC-VS” manufactured by Nihon Matai Co., Ltd., thickness 100 μm) was used as a base material.

[Comparative Example 7]
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the pressure-sensitive adhesive composition was prepared as follows and the following base material was used.

Adhesive main agent B 100 parts by mass, urethane acrylate C 50 parts by mass, cross-linking agent C 3.0 parts by mass, polymerization initiator 1.5 parts by mass, mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) to a solid content of 20% and sufficiently dispersed to prepare an adhesive composition.

A polyethylene terephthalate (PET) film (“A4160” manufactured by Toyobo Co., Ltd., thickness 50 μm) was used as the base material.

[evaluation]
(1) Peeling distance A test piece was prepared by cutting an adhesive tape for semiconductor processing into a size of 25 mm in width and 100 mm in length. Further, on the outer peripheral surface of a cylindrical plastic core with an inner diameter of 3 inches, a thickness of 6 mm, a length of 94 mm, and a weight of 155 g (a plastic core made of ABS resin manufactured by Showa Marutsutsu Co., Ltd.), A 100 mm copper foil (rolled copper foil "RCF-T5B" manufactured by Fukuda Metal Foil & Powder Co., Ltd.) was wound and fixed so that the longitudinal direction of the copper foil was in the circumferential direction of the plastic core, to prepare an adherend. . First, on the surface of the adhesive layer of the test piece, a central area of 25 mm in width and 25 mm in length is attached to the surface of the copper foil of the adherend, and the adherend is placed downward, and the test is performed. Both longitudinal ends of the test piece were fixed to a metal frame so that the piece was horizontal. Next, lift the metal frame to a height of 120 mm so that the metal frame is horizontal in an environment where the temperature is 25 ° C ± 5 ° C, the humidity is 40% RH or more and 60% RH or less, and the adherend is removed. It was stored in a suspended state for three days. Next, in the bonding region, the distance that the test piece was peeled from the adherend was measured. Among the above distances, the maximum distance was taken as the peeling distance.

(2) Adhesive strength to SUS plate Adhesive strength to SUS plate is measured by JIS Z0237: 2009 (adhesive tape/adhesive sheet test method) test method method 1 (temperature 23 ° C humidity 50% RH, tape and sheet on stainless steel test plate Measured by peeling the test piece in the length direction under the conditions of a width of 25 mm, a peeling angle of 180°, and a peeling speed of 300 mm/min. The SUS plate used was SUS304, surface finish BA, thickness 1.5 mm, width 100 mm, length 150 mm.

In addition, regarding the adhesive strength to the SUS plate after ultraviolet irradiation, ultraviolet rays with a wavelength of 365 nm were irradiated from the substrate side of the adhesive tape for semiconductor processing so that the integrated light amount was 450 mJ / cm ² to cure the adhesive layer. After that, the adhesive force was measured by the method described above.

(3) Adhesive strength to copper plate peel off at 180°), use a copper plate instead of a stainless steel test plate, and peel it in the length direction of the test piece under the conditions of a width of 25 mm, a peeling angle of 180°, and a peeling speed of 300 mm / min. It was measured by As the copper foil, a 35 μm thick rolled copper foil “RCF-T5B” manufactured by Fukuda Metal Foil & Powder Co., Ltd. is used, and the rolled copper foil is 1.5 mm thick, 100 mm wide, It was placed on a SUS plate having a length of 150 mm, and the entire surface of the rolled copper foil was fixed to the SUS plate via double-sided tape or the like.

In addition, regarding the adhesive strength to the copper plate after ultraviolet irradiation, ultraviolet rays with a wavelength of 365 nm were irradiated from the substrate side of the adhesive tape for semiconductor processing so that the integrated light amount was 450 mJ / cm ² to cure the adhesive layer. After that, the adhesive strength was measured by the method described above.

(4) Adhesive strength to PET plate Adhesive strength to PET plate is measured by test method 1 of JIS Z0237: 2009 (adhesive tape/adhesive sheet test method) (temperature 23 ° C humidity 50% RH, tape and sheet on stainless steel test plate 180 ° peel off test method), using a PET plate instead of a stainless steel test plate, under the conditions of a width of 25 mm, a peel angle of 180 °, and a peel speed of 300 mm / min, the length direction of the test piece It was measured by peeling it off. At this time, the adhesive force was measured one hour after the adhesive tape for semiconductor processing was attached to the PET plate. In addition, as the PET plate, a polyester film "Lumirror #50-S10" manufactured by Toray Industries, Inc. is used. The whole surface was fixed and used.

(5) Young's modulus Conforming to JIS K7127, using "Tensilon RTF1150" manufactured by A&D Co., Ltd. as a tensile tester, test piece: test piece type 5, distance between chucks: 60 mm, tensile speed: 100 mm / min The Young's modulus of the adhesive tape for semiconductor processing was measured under the following conditions.

(6) Ball tack test According to JIS Z0237:2009, an inclined ball tack test was performed under conditions of an inclination angle of 30°, a temperature of 23°C and a humidity of 50% RH. When a ball was rolled on the surface of the adhesive layer of the adhesive tape for semiconductor processing, the number of the largest ball out of the balls stopped on the surface of the adhesive layer of the adhesive tape for semiconductor processing was evaluated.

(7) Chip Flying Using an adhesive tape for semiconductor processing, a silicon wafer with a diameter of 8 inches and a thickness of 100 μm is diced to a chip size of 3 mm × 3 mm under the following conditions, and then diced. It was confirmed. At the wafer peripheral edge, non-square (for example, triangular) chips of 2 mm×2 mm were excluded from the observation, and only the portion where the chip of 2 mm×2 mm was formed was evaluated.

(Dicing conditions)
Dicing device: "DFD6361" manufactured by DISCO
Conditions: Blade Z1#3500 (width 40 μm)
Rotation speed Z1 40,000rpm
Feeding speed 30mm/sec

(Evaluation criteria)
A: The rate of chip fly is 1% or less.
B: The rate of chip flying is more than 1%.

From Table 1, it was confirmed that when the peel distance was within a predetermined range, chip fly was small.

The present disclosure provides the following [1] to [7].
[1] An adhesive tape for semiconductor processing, comprising a substrate and an energy ray-curable adhesive layer disposed on one surface of the substrate,
An adhesive tape for semiconductor processing, having a peel distance of 4 mm or less as measured by the following test.
Test: It has the following steps (1) to (5) in order.
(1) A test piece is prepared by cutting the adhesive tape for semiconductor processing into a size of 25 mm in width and 100 mm in length.
(2) A cylindrical plastic core having an inner diameter of 3 inches, a thickness of 6 mm, a length of 94 mm, and a weight of 155 g, and a copper foil having a thickness of 35 μm, a width of 80 mm, and a length of 100 mm disposed on the outer peripheral surface of the plastic core. Prepare an adherend having
(3) Of the surface of the adhesive layer of the test piece, a region having a width of 25 mm and a length of 25 mm is attached to the surface of the copper foil of the adherend, with the adherend facing downward, Both ends of the test piece in the longitudinal direction are fixed to a metal frame so that the test piece is horizontal.
(4) in an environment where the temperature is 25° C.±5° C., the humidity is 40% RH or more and 60% RH or less, and the energy rays are blocked; Store for days.
(5) The distance that the test piece is peeled from the adherend is measured and taken as the peel distance.
[2] The adhesive tape for semiconductor processing according to [1], which has a ball number of 5 or less in an inclined ball tack test.
[3] The adhesive tape for semiconductor processing according to [1] or [2], which has an adhesive strength to a copper plate of 5.0 N/25 mm or more.
[4] The adhesive tape for semiconductor processing according to any one of [1] to [3], which has a Young's modulus of 50 MPa or more and 1000 MPa or less.
[5] The adhesive tape for semiconductor processing according to any one of [1] to [4], wherein the storage elastic modulus of the adhesive layer at 25°C is 0.1 MPa or more.
[6] The adhesive tape for semiconductor processing according to any one of [1] to [5], which has an adhesive strength to a SUS plate of 4.5 N/25 mm or more.
[7] The pressure-sensitive adhesive tape for semiconductor processing according to any one of [1] to [6], which has an adhesive strength to a SUS plate of 2.0 N/25 mm or less after irradiation with energy rays.

DESCRIPTION OF SYMBOLS 1... Base material 2... Adhesive layer 10... Adhesive tape for semiconductor processing

Claims (7)

An adhesive tape for semiconductor processing, comprising a substrate and an energy ray-curable adhesive layer disposed on one surface of the substrate,
An adhesive tape for semiconductor processing, having a peel distance of 4 mm or less as measured by the following test.
Test: It has the following steps (1) to (5) in order.
(1) A test piece is prepared by cutting the adhesive tape for semiconductor processing into a size of 25 mm in width and 100 mm in length.
(2) A cylindrical plastic core having an inner diameter of 3 inches, a thickness of 6 mm, a length of 94 mm, and a weight of 155 g, and a copper foil having a thickness of 35 μm, a width of 80 mm, and a length of 100 mm disposed on the outer peripheral surface of the plastic core. Prepare an adherend having
(3) Of the surface of the adhesive layer of the test piece, a region having a width of 25 mm and a length of 25 mm is attached to the surface of the copper foil of the adherend, with the adherend facing downward, Both ends of the test piece in the longitudinal direction are fixed to a metal frame so that the test piece is horizontal.
(4) in an environment where the temperature is 25° C.±5° C., the humidity is 40% RH or more and 60% RH or less, and the energy rays are blocked; Store for days.
(5) The distance that the test piece is peeled from the adherend is measured and taken as the peel distance. 2. The adhesive tape for semiconductor processing according to claim 1, which has a ball number of 5 or less in an inclined ball tack test. 3. The adhesive tape for semiconductor processing according to claim 1, which has an adhesive strength to a copper plate of 5.0 N/25 mm or more. 3. The adhesive tape for semiconductor processing according to claim 1, having a Young's modulus of 50 MPa or more and 1000 MPa or less. 3. The adhesive tape for semiconductor processing according to claim 1, wherein the adhesive layer has a storage elastic modulus at 25[deg.] C. of 0.1 MPa or more. 3. The adhesive tape for semiconductor processing according to claim 1, wherein the adhesive strength to a SUS plate is 4.5 N/25 mm or more. 3. The adhesive tape for semiconductor processing according to claim 1, wherein the adhesive strength to a SUS plate after energy beam irradiation is 2.0 N/25 mm or less.

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