JP7163470B2 - Batch type substrate processing equipment - Google Patents

Description

The present invention relates to a batch-type substrate processing apparatus, and more particularly, to a batch-type substrate processing apparatus that supplies a process gas decomposed in a discharge space partitioned from a processing space to the processing space.

Generally, a substrate processing apparatus places a substrate to be processed in a processing space, and then deposits the substrate using a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. It is an apparatus for depositing reaction particles contained in process gas injected into a processing space onto a substrate. Such a substrate processing apparatus includes a single wafer type capable of processing a single substrate and a batch type capable of simultaneously processing a plurality of substrates. ) and there is.

In the batch-type substrate processing apparatus, the temperature of not only the substrate but also the wall surface of the processing space rises due to a hot wall type heating means surrounding the processing space, and the process gas also reaches the inner wall surface of the processing space. vapor deposition, with the concomitant formation of undesired thin films. In particular, when a process environment such as plasma is generated in the processing space, the thin film deposited on the inner wall is peeled off as particles due to the magnetic field or electric field generated in the plasma generation space, and the substrate is removed. There is a possibility that the inconvenience of acting as a contaminant during the treatment process may occur. As a result, not only the quality of the thin film on the substrate is degraded, but also the efficiency of the processing process for the substrate is degraded.

Korea Registered Patent No. 10-1145538

The present invention provides a batch-type substrate processing apparatus that supplies a process gas decomposed in a discharge space partitioned from a processing space into the processing space.

A batch-type substrate processing apparatus according to an embodiment of the present invention includes a reaction tube providing a processing space in which a plurality of substrates can be accommodated, and a discharge space partitioned from the processing space by a partition wall extending along the longitudinal direction of the reaction tube. and a plasma forming part for forming plasma in the discharge space by a plurality of electrodes extending along the longitudinal direction of the reaction tube, the plurality of electrodes being a plurality of power supply electrodes spaced apart from each other; and a plurality of ground electrodes disposed between the plurality of power supply electrodes.

The plurality of ground electrodes are spaced apart from the plurality of powered electrodes, and the plurality of electrodes are capacitively coupled plasma (CCP) in respective spaced spaces between the spaced apart powered and ground electrodes. may be formed.

The plurality of ground electrodes may be spaced apart from each other.

A separation distance between the plurality of ground electrodes may be equal to or less than a separation distance between the power supply electrode and the ground electrode.

The batch-type substrate processing apparatus further includes an electrode protection unit that protects the plurality of power supply electrodes and the plurality of ground electrodes, and the electrode protection unit includes a plurality of wires that respectively wrap around the plurality of power supply electrodes. a first electrode protection tube; a plurality of second electrode protection tubes respectively enclosing the plurality of ground electrodes; and a bridge connecting the first electrode protection tube and the second electrode protection tube facing each other. and may be provided.

The bridge part communicates the first electrode protection tube and the second electrode protection tube, and either the first electrode protection tube or the second electrode protection tube communicated by the bridge part. a protective gas supply unit connected to one of the electrode protective tubes to supply protective gas; A protective gas exhaust section for exhausting the protective gas supplied to one of the electrode protective tubes may be further provided.

The protective gas may contain an inert gas.

The batch-type substrate processing apparatus includes a high-frequency power supply unit that supplies high-frequency power, and a high-frequency power supply unit that is disposed between the high-frequency power supply unit and the plurality of power supply electrodes, and distributes the high-frequency power supplied from the high-frequency power supply unit. and a power distributor for supplying power to each of the plurality of power supply electrodes.

The power distribution unit includes a variable capacitor disposed between a distribution point at which the high-frequency power is distributed to each of the plurality of power supply electrodes and at least one of the plurality of power supply electrodes. good too.

The batch-type substrate processing apparatus may further include a controller that selectively adjusts the high-frequency power supplied to each of the plurality of power supply electrodes according to the state of the plasma.

The batch-type substrate processing apparatus further includes a plurality of gas supply pipes for supplying the process gas decomposed by the plasma through the discharge port toward each space between the power supply electrode and the ground electrode. may be provided.

The plasma forming part is arranged in a direction deviating from the discharge direction of the discharge port, and is arranged in the longitudinal direction of the reaction tube to supply radicals in the process gas decomposed by the plasma to the processing space. may be provided.

The batch-type substrate processing apparatus is disposed along the circumferential direction of the reaction tube on both sides of the plurality of electrodes, and discharges a process gas decomposed by the plasma into the discharge space through an ejection port. A plurality of gas supply pipes may be further provided.

The plurality of gas supply pipes may be symmetrically arranged on both sides in a radial direction extending from the central axis of the reaction tube to the center of the discharge space.

In the batch-type substrate processing apparatus according to the embodiment of the present invention, the process gas is decomposed by plasma in the discharge space partitioned from the processing space, and then supplied to the inner wall of the reaction tube by being supplied to the inside of the processing space. Particles can be prevented from being peeled off from the deposited thin film, and the efficiency of the substrate treatment process can be improved.

Further, by arranging a plurality of ground electrodes between a plurality of power supply electrodes separated from each other and arranging a ground electrode corresponding to each of the plurality of power supply electrodes, the ground electrodes can be used in common. As a result, it is possible to prevent a double electric field from being led to the ground electrode. As a result, it is possible to suppress or prevent plasma damage caused by the plasma potential, which increases in proportion to the electric field, and extend the life of the plasma forming part. On the other hand, by lowering the applied voltage using a plurality of power supply electrodes, the sputtering effect can be reduced, and the process time can be shortened using high plasma density and radicals.

Also, the plasma decomposition rate can be improved by supplying the process gas to the space between the power supply electrode and the ground electrode through the plurality of gas supply pipes. In addition, by arranging the plurality of injection ports of the plasma forming section so as to deviate from the discharge direction of each of the discharge ports formed in the plurality of gas supply pipes, the process gas that is not plasma-decomposed does not flow into the processing space. , allowing radicals to be supplied to the interior of the processing space after the process gas has been sufficiently decomposed.

On the other hand, by distributing the high-frequency power supplied from one high-frequency power supply unit through the power distribution unit and supplying it to a plurality of power supply electrodes, a uniform plasma is generated in the space between the power supply electrode and the ground electrode. can be formed.

1 is a horizontal sectional view showing a substrate processing apparatus according to one embodiment of the present invention; FIG. 1 is a side sectional view showing a substrate processing apparatus according to one embodiment of the present invention; FIG. FIG. 4 is a conceptual diagram for explaining waveforms of voltages led to ground electrodes according to the number of electrodes according to one embodiment of the present invention. FIG. 4 is a conceptual diagram for explaining an electrode protection part according to one embodiment of the present invention; FIG. 2 is a conceptual diagram for explaining supply of high-frequency power according to one embodiment of the present invention; FIG. 4 is a horizontal sectional view showing a modification of multiple gas supply pipes according to one embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail based on the accompanying drawings. The present invention, however, is not intended to be limited to the embodiments disclosed below, but may be embodied in a variety of different forms and merely these embodiments should provide a complete disclosure of the invention and general knowledge. It is provided to fully inform the owner of the scope of the invention. In describing the present invention, like reference numerals denote like elements, and the drawings may be partially exaggerated in size to accurately describe the embodiments of the present invention. , like reference numerals refer to like elements.

FIG. 1 is a horizontal sectional view showing a substrate processing apparatus according to one embodiment of the present invention, and FIG. 2 is a side sectional view showing the substrate processing apparatus according to one embodiment of the present invention. (a) is a cross-sectional view taken along AA' in FIG. 1, and (b) in FIG. 2 is a side cross-sectional view taken along BB' in FIG.

1 and 2, a batch type substrate processing apparatus 100 according to an embodiment of the present invention includes a reaction tube 110 providing a processing space 111 in which a plurality of substrates 10 are accommodated, and a longitudinal direction of the reaction tube 110. plasma formation in which plasma is formed in the discharge space 125 by a plurality of electrodes 121 and 122 extending along the longitudinal direction of the reaction tube 110. and a portion 120 .

The reaction tube 110 may be formed of a heat-resistant material such as quartz or ceramic in a cylindrical shape with a closed top and an open bottom. may be given. A processing space 111 of the reaction tube 110 accommodates a substrate boat 50 in which a plurality of substrates 10 are stacked in the longitudinal direction of the reaction tube 110, and is a space where a processing process (eg, vapor deposition process) is actually performed.

Here, the substrate boat 50 is a component for supporting the substrates 10, and may be formed such that a plurality of substrates 10 are stacked in the longitudinal direction (that is, the vertical direction) of the reaction tube 110. Alternatively, a plurality of unit processing spaces may be formed in which a plurality of substrates 10 are individually processed.

The plasma forming part 120 may form a plasma using a plurality of electrodes 121 and 122 , and decomposes the process gas supplied from the gas supply pipe 170 by the plasma to generate a plasma in the processing space 111 in the reaction tube 110 . may be given to The plasma generating section 120 may have a discharge space 125 separated from the processing space 111 by a partition wall 115 extending along the longitudinal direction of the reaction tube 110 . At this time, the plasma forming part 120 may form plasma in the discharge space 125 by a plurality of electrodes 121 and 122 extending along the longitudinal direction of the reaction tube 110 . may be arranged in the circumferential direction of For example, the plurality of electrodes 121 and 122 may have a bar shape extending along the longitudinal direction of the reaction tube 110, and may be arranged side by side (or parallel) to each other.

The discharge space 125 of the plasma forming part 120 is a space in which plasma is formed, and may be separated from the processing space 111 by the partition wall 115 . For this reason, the plasma generator 120 decomposes the process gas supplied from the gas supply pipe 170 using plasma in the discharge space 125 , and only radicals in the decomposed process gas flow into the processing space 111 . can give.

Here, the partition wall 115 may extend along the longitudinal direction of the reaction tube 110 , may be disposed inside the reaction tube 110 , or may be disposed outside the reaction tube 110 . For example, the partition wall 115 may be disposed inside the reaction tube 110 to form the discharge space 125 with the inner wall of the reaction tube 110, as shown in FIG. and a main sidewall 115c between the plurality of minor sidewalls 115a, 115b. The plurality of secondary side walls 115a and 115b may protrude (or extend) from the inner wall of the reaction tube 110 to the inside of the reaction tube 110 and be spaced apart from each other. The main side wall portion 115c may be spaced apart from the inner wall of the reaction tube 110 and disposed between the plurality of sub side wall portions 115a and 115b. At this time, each of the plurality of sub-side walls 115 a and 115 b and the main side wall 115 c may extend along the inner wall of the reaction tube 110 in the longitudinal direction of the reaction tube 110 . However, the barrier ribs 115 are not limited to those shown in FIG. According to another embodiment, the partition wall 115 may be disposed outside the reaction tube 110 to form the discharge space 125 with the outer wall of the reaction tube 110 and is connected to the outer surface (or outer wall) of the reaction tube 110 . and a main sidewall 115c between the plurality of minor sidewalls 115a, 115b. The plurality of secondary side walls 115a, 115b may protrude from the outer wall of the reaction tube 110 to the outside of the reaction tube 110 and may be spaced apart from each other and arranged side by side. The main side wall 115c may be spaced apart from the outer wall of the reaction tube 110 and disposed between the plurality of sub side walls 115a and 115b. On the other hand, the main side wall portion 115c is formed in a tubular shape having a diameter smaller or larger than that of the reaction tube 110, and a gap between the side wall of the reaction tube 110 and the main side wall portion 115c (that is, the inner wall of the reaction tube and the main side wall) is formed. A discharge space 125 may be formed between the side wall, or between the outer wall of the reaction tube and the main side wall.

The plasma forming part 120 forms plasma in the discharge space 125 separated from the processing space 111 by the partition wall 115 , so that the process gas supplied from the gas supply pipe 170 is directly supplied to the inside of the reaction tube 110 . It may not be decomposed in the processing space 111 , but may be decomposed in the discharge space 125 which is a space partitioned from the processing space 111 and then supplied to the processing space 111 . Accordingly, when the process gas is directly supplied to the processing space 111 to form plasma in the processing space 111, a thin film formed on the inner wall of the processing space 111 due to the magnetic field or electric field of the plasma becomes particles. The inconvenience of peeling off can be prevented.

The plurality of electrodes 121 and 122 may include a plurality of power supply electrodes 121 separated from each other and a plurality of ground electrodes 122 arranged between the plurality of power supply electrodes 121 . The plurality of power supply electrodes 121 may be separated from each other, and may be supplied with high frequency power (or RF power).

The plurality of ground electrodes 122 may be arranged between the plurality of power supply electrodes 121 spaced apart from each other, and may be grounded. At this time, the plurality of ground electrodes 122 may be grounded individually or may be grounded in common. For example, two ground electrodes 122 may be arranged in a space in which two power supply electrodes 121 are spaced apart, and ground electrodes 122 corresponding to the power supply electrodes 121 may be arranged. Through this, a plasma can be formed between the corresponding pair of power supply electrode 121 and ground electrode 122 .

That is, the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 may have a 4-electrode structure, and the power supply electrodes 121 may be separately supplied with high-frequency power to generate plasma. It is possible to reduce the high frequency power required for generation or the high frequency power to obtain the desired amount of radicals to prevent generation of particles due to high high frequency power.

Specifically, when the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 have a four-electrode structure as in the present invention, in order to generate a plasma in which the process gas is decomposed, or a desired amount of radicals It is possible to reduce the required high-frequency power to half or significantly reduce the high-frequency power required to obtain the high-frequency power, and prevent the inconvenience of damage to the electrode protection part 130, the partition 115, the reaction tube 110, etc. due to the high frequency power. be able to. In addition, it is possible to prevent the problem that particles are generated due to damage to the electrode protection part 130, the partition wall 115, the reaction tube 110, and the like. For example, if the power required to decompose the process gas with sufficient energy is 100 W, a four-electrode structure in which a plurality of ground electrodes 122 are provided between a plurality of power-supply electrodes 121 will produce a power of 100 W. Since a low power of 50 W can be separately supplied to each of the power supply electrodes 121, even if a power lower than the power necessary for plasma generation is supplied, the power of 100 W is finally supplied. The same amount of radicals can be obtained. In addition, since a low power of 50 W is separately supplied to each power supply electrode 121, the process gas can be more effectively decomposed without generating particles due to high power.

FIG. 3 is a conceptual diagram for explaining voltage waveforms led to ground electrodes according to the number of a plurality of electrodes according to an embodiment of the present invention, and FIG. 3(a) shows a four-electrode structure. , FIG. 3b shows a three-electrode structure.

Referring to FIG. 3, it can be seen that the voltage waveform induced (or induced) to the ground electrode is different between the four-electrode structure of FIG. 3(a) and the three-electrode structure of FIG. 3(b). can.

More specifically, as shown in FIG. 3B, in the three-electrode structure, when the same high-frequency power is supplied simultaneously to the two power supply electrodes 121a and 121b, the common ground electrode 122 is connected to the first electrode. The voltage applied to the power-supply electrode 121a and the voltage applied to the second power-supply electrode 121b are combined (or combined) to lead to a double voltage. That is, in the three-electrode structure using the common ground electrode 122, the voltage applied to the first power supply electrode 121a and the voltage applied to the second power supply electrode 121b have the same phase difference. Therefore, a higher electric field is induced in the ground electrode 122 than in the two power supply electrodes 121a and 121b. In addition, the undesirably high electric field associated therewith increases the plasma potential proportional to the electric field, resulting in plasma damage. In particular, the second electrode protection tube 132, the partition wall 115, the reaction tube 110, etc. around the ground electrode 122 to which the double voltage is applied may be damaged due to plasma damage.

On the other hand, as shown in FIG. 3(a), in the four-electrode structure of the present invention, a voltage corresponding to half the level of the voltage led to the ground electrode 122 in the three-electrode structure (that is, the first power supply The same voltages applied to the supply electrode and the second power supply electrode) can be directed to the two ground electrodes 122a, 122b. This can suppress or prevent plasma damage caused by a high electric field due to a high voltage during plasma generation (turn on) and plasma maintenance. That is, the voltage applied to the first power supply electrode 121a can lead to the same voltage as the voltage applied to the first power supply electrode 121a to the first ground electrode 122a. Then, the voltage applied to the second power supply electrode 121b can lead to the same voltage as the voltage applied to the second power supply electrode 121b to the second ground electrode 122b.

Also, in the case of the three-electrode structure, there is a risk of causing mutual interference between the three electrodes, but in the case of the four-electrode structure, the first power supply electrode 121a and the first ground electrode 122a form a pair. None, the second power supply electrode 121b and the second ground electrode 122b are paired, and only the corresponding electrodes at a short distance act on each other, and accordingly, the non-corresponding electrodes at a long distance are hardly affected. can not. There is almost no influence of interference between the power supply electrodes 121a and 121b and the ground electrodes 122b and 122a, which do not correspond. For reference, in view of the principles of electromagnetic fields and electric circuits, the powered electrode 121 will work with the nearest grounded electrode 122 .

Here, the plurality of ground electrodes 122 may be spaced apart from the plurality of power supply electrodes 121 , and the plurality of electrodes 121 , 122 may be spaced apart between the spaced power supply electrodes 121 and the ground electrodes 122 . A capacitively coupled plasma (CCP) may be formed in each of the spaces. Each of the plurality of ground electrodes 122a, 122b may be spaced apart from the plurality of power supply electrodes 121a, 121b. At this time, the power supply electrode 121 and the ground electrode 122 may be separated from each other to provide a plasma generation space, and the plurality of power supply electrodes 121a and 121b and the plurality of ground electrodes 122a and 122b may provide a plurality of plasma generation spaces. may be formed.

The plurality of electrodes 121 and 122 form a capacitively coupled plasma (CCP) in each space (ie, plasma generation space) between the spaced apart power supply electrode 121 and ground electrode 122. good too. Here, each of the plurality of power supply electrodes 121 may be supplied with a high-frequency power, so that the space between the power supply electrode 121 and the ground electrode 122 facing (or corresponding to) each other is filled with A capacitively coupled plasma (CCP) can be generated by the generated electric field.

Here, a capacitively coupled plasma (a capacitively coupled plasma ( Unlike the CCP) method, the Inductively Coupled Plasma (ICP) method uses the electric field formed around the magnetic field when the magnetic field formed in the current flowing in the antennas coupled to each other changes with time. Generally, in the inductively coupled plasma (ICP) method, plasma is generated by E-mode and switched to H-mode to form high-density plasma. The inductively coupled plasma (ICP) system is divided into E-mode and H-mode according to the plasma density or applied power. E-mode, which has a low plasma density, and H-mode, which has a high plasma density. A high power must be induced to switch the mode to . In addition, when the input power increases, particles and a large number of radicals that do not participate in the reaction due to the high electron temperature are generated, making it difficult to obtain a good film quality and to generate a uniform plasma according to the electric field formed by the antenna. An inconvenience occurs.

However, in the present invention, a capacitively coupled plasma (CCP) is formed in each space (that is, a plasma generation space) between the power supply electrode 121 and the ground electrode 122, so that an inductively coupled plasma (ICP) ), there is no need to induce high power for mode switching. Therefore, the prevention of particle generation and the generation of a large number of radicals participating in the reaction according to the low electron temperature can be even more effective in obtaining a good film quality.

Also, the plurality of ground electrodes 122a and 122b may be spaced apart from each other or may be physically separated. Here, "separate" or "separate" means not integral, and the distance between them can be very small, even greater than zero.

If the plurality of ground electrodes 122a and 122b are attached to each other without being separated from each other, there is a risk of mutual interference between the plurality of ground electrodes 122a and 122b. , 121a. For example, the voltage applied to the first power supply electrode 121a and the voltage applied to the second power supply electrode 121b are applied to the first ground electrode 122a and the second ground electrode 122b (i.e., the plurality of ground electrodes). 122a and 122b (i.e., the plurality of ground electrodes). In such a case, plasma damage may occur as a result of the high electric field increasing the plasma potential proportional to the electric field, and the second electrodes around the plurality of ground electrodes 122a, 122b lead to twice the voltage. The protective tube 132, the partition wall 115, the reaction tube 110, and the like may be damaged by plasma damage. Here, in the case of the four-electrode structure, the total volume of the ground electrodes 122a and 122b is larger than in the case of the three-electrode structure. Yes.

However, if the plurality of ground electrodes 122a and 122b are spaced apart from each other, it is possible to suppress or prevent mutual interference between the plurality of ground electrodes 122a and 122b. It is also possible to suppress or prevent interference with the supply electrodes 121b and 121a. That is, there is no interference between the ground electrodes 122a and 122b, and there is no interference between the power supply electrodes 121b and 121a that do not correspond to the ground electrodes 122a and 122b. The applied voltage allows the same voltage applied to the first powered electrode 121a to be led to the first grounded electrode 122a only. Then, the voltage applied to the second power supply electrode 121b can lead to the same voltage as the voltage applied to the second power supply electrode 121b only to the second ground electrode 122b. This completely suppresses or prevents plasma damage caused by high electric fields due to high voltages during plasma generation and plasma maintenance.

At this time, the distance between the plurality of ground electrodes 122 may be equal to or less than the distance between the power supply electrode 121 and the ground electrode 122 . When the distance between the ground electrodes 122 is greater than the distance between the power supply electrode 121 and the ground electrode 122, a relatively low plasma density is formed in the space between the ground electrodes 122. As a result, the plasma density and/or the radical density in the discharge space 125 cannot be formed uniformly. As a result, the amount of radicals supplied to each injection port 122 of the plasma forming unit 120 may differ, and uneven processing (or vapor deposition) may occur among the plurality of substrates 10 . In view of the structure of the batch-type substrate processing apparatus 100, the width of the discharge space 125 (or the width of the plasma forming portion) must be limited. Since the space between the power supply electrode 121 and the ground electrode 122, which is a plasma generation space, is relatively narrow, the process gas cannot be effectively decomposed and radicals cannot be obtained effectively.

Therefore, the distance between the plurality of ground electrodes 122 may be less than or equal to the distance between the power supply electrode 121 and the ground electrode 122 . Through this, interference between the plurality of ground electrodes 122a and 122b and interference between non-corresponding power supply electrodes 121a and 121b and ground electrodes 122b and 122a can be prevented, and the process gas can be effectively decomposed to effectively Radicals can be obtained, and plasma density and/or radical density in the discharge space 125 can be formed uniformly. As a result, it is possible to prevent unevenness in processing between the plurality of substrates 10 and improve the uniformity of processing (or vapor deposition) among the plurality of substrates 10 .

Therefore, in the batch type substrate processing apparatus 100 according to the present invention, a plurality of ground electrodes 122 are arranged between a plurality of power supply electrodes 121 spaced apart from each other, and ground electrodes 121a and 121b corresponding to the power supply electrodes 121a and 121b are provided. By arranging the electrodes 122a and 122b, it is possible to prevent a double electric field from being led to the ground electrode 122 due to the common use of the ground electrode 122. FIG. As a result, it is possible to suppress or prevent plasma damage caused by the plasma potential that increases in proportion to the electric field, thereby extending the life of the plasma forming section 120 . By lowering the applied voltage using the plurality of power supply electrodes 121, the sputtering effect can be reduced, and the process time can be shortened using high plasma density and radicals.

FIG. 4 is a conceptual diagram for explaining an electrode protector according to an embodiment of the invention.

Referring to FIG. 4, the batch type substrate processing apparatus 100 according to the present invention may further include an electrode protection unit 130 that protects the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 .

The electrode protection part 130 may protect the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 , and may wrap at least a portion of each of the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 to protect the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 . The electrode 121 and the plurality of ground electrodes 122 may each be protected.

Here, the electrode protection part 130 includes a plurality of first electrode protection tubes 131 that wrap the plurality of power supply electrodes 121a and 121b, respectively, and a plurality of second electrode protection tubes that wrap the plurality of ground electrodes 122a and 122b, respectively. Two electrode protection tubes 132 and a bridge portion 133 connecting the first electrode protection tube 131 and the second electrode protection tube 132 facing each other may be provided. The plurality of first electrode protection tubes 131 may wrap the outer peripheral surfaces of the plurality of power supply electrodes 121 a and 121 b respectively, and may protect each of the plurality of power supply electrodes 121 .

The plurality of second electrode protection tubes 132 may wrap the outer peripheral surfaces of the plurality of ground electrodes 122a and 122b, respectively, and may protect the plurality of ground electrodes 122, respectively.

For example, each of the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 is protected by being wrapped by the first electrode protection tube 131 and/or the second electrode protection tube 132 from top to bottom. Alternatively, the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 may be made of a flexible braided wire.

In general, the electrical conduction associated with the use of a high-frequency power source is affected by the skin effect in which the current flows along the surface (or the skin depth of the metal, which is the depth at which the current flows). ). As a result, when a mesh-like mesh electrode is used, the area occupied by the empty space is large, so there is a problem that the high-frequency power supply is inefficient due to the large resistance due to the small surface area. Further, the treatment process of the substrate 10 is repeatedly performed at high and low temperatures, and when the electrode has a mesh shape, the shape of the mesh electrode changes irregularly according to the changing temperature, so that the shape is maintained. It looks bad. In addition, since the resistance differs according to the changed shape, there is a problem that non-uniform plasma is generated when the high-frequency power is supplied.

In order to prevent such inconvenience, the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 are not only inserted inside the first electrode protection tube 131 and/or the second electrode protection tube 132, It may be formed into a flexible braid type (braid wire) to minimize space. For example, in order to further narrow the empty space, a method of coating the surface of each electrode with a metal may be further used. In addition, in order to hold the plurality of flexible braided power supply electrodes 121 and the plurality of ground electrodes 122 in the discharge space 125 in a fixed state extending in the longitudinal direction of the reaction tube 110, a plurality of power sources are provided. A spring (not shown) may be further provided to fix and support both ends of the supply electrode 121 and each of the plurality of ground electrodes 122 so as not to move. At this time, the plurality of flexible power supply electrodes 121 and the plurality of flexible ground electrodes 122 can be fixed in the longitudinal direction of the reaction tube 110 by the spring portion, respectively, and can be maintained in the shape of an elongated rod.

The first electrode protection tube 131 and the second electrode protection tube 132 surround the outside of the power supply electrodes 121 and the outside of the ground electrodes 122, respectively, so that the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 are are electrically insulated, and the plurality of power supply electrodes 121 and the plurality of ground electrodes 122 exposed to the plasma atmosphere can be protected from the plasma. This allows the plurality of powered electrodes 121 and the plurality of grounded electrodes 122 to be safely protected from possible contamination or particles caused by the plasma. At this time, the first electrode protection tube 131 and the second electrode protection tube 132 may be made of a heat-resistant material such as quartz or ceramic, and may be manufactured integrally with the reaction tube 110 .

The bridge part 133 may connect the first electrode protection tube 131 and the second electrode protection tube 132 facing each other, and the gap between the first electrode protection tube 131 and the second electrode protection tube 132 is may be retained. As a result, the distance between the power supply electrode 121 and the ground electrode 122 that work together to form plasma can be kept constant, and the corresponding pair (or pair) of the power supply electrode 121 and the ground electrode 122 is equally spaced. can have Here, "the first electrode protection tube 131 and the second electrode protection tube 132 facing each other" are inserted with the power supply electrode 121 and the ground electrode 122, which work together to form plasma in the space between them. It means the electrode protection tubes 131 and 132 that are used. That is, the powered electrode 121 may work with the closest grounded electrode 122 to form a plasma in the space therebetween.

In order to obtain a uniform plasma density in the discharge space 125, each space between the power supply electrode 121 and the ground electrode 122 should have the same volume (or area). In addition, plasma (or plasma potential) of the same strength is formed in the space between the power supply electrode 121 and the ground electrode 122 to form the space (or plasma potential) between the power supply electrode 121 and the ground electrode 122. , the plasma generation space) to make the plasma density uniform. For this reason, the first electrode protection tube 131 and the second electrode protection tube 132 may be joined together at the bridge portion 133 to maintain the gap between the first electrode protection tube 131 and the second electrode protection tube 132. good. As a result, the distance between the power supply electrode 121 and the ground electrode 122 that work together to form plasma in the space therebetween can be kept constant, and the space between the power supply electrode 121 and the ground electrode 122 can be kept constant. It is possible to make the plasma density uniform among a plurality of plasma generation spaces by giving each space the same volume.

In addition, the bridge portion 133 not only connects the first electrode protection tube 131 and the second electrode protection tube 132 but also connects the first electrode protection tube 131 and the second electrode protection tube 132 together. Alternatively, gas may flow between the first electrode protection tube 131 and the second electrode protection tube 132 . For example, inside the first electrode protection tube 131 and the second electrode protection tube 132, the inner wall (or the inner surface) of the first electrode protection tube 131 and the second electrode protection tube 132 are connected to the power supply electrode 121, respectively. and the ground electrode 122 (or from the surface of the power supply electrode and the ground electrode), a gas flow path may be formed through which gas can flow. A tube-shaped gas flow path may also be formed in the bridge portion 133 to allow the gas flow path of the first electrode protection tube 131 and the gas flow path of the second electrode protection tube 132 to communicate with each other. .

In the batch-type substrate processing apparatus 100 according to the present invention, either one of the first electrode protection tube 131 and the second electrode protection tube 132 communicated by the bridge portion 133 is connected to the electrode protection tube 131 or 132 . A protective gas supply unit 141 connected to supply protective gas, and one of the first electrode protective tube 131 and the second electrode protective tube 132 connected to the other electrode protective tube 132 or 131 A protective gas exhaust section 142 for exhausting the protective gas supplied to one of the electrode protective tubes 131 or 132 may be further provided.

The protective gas supply unit 141 is connected to either one of the first electrode protective tube 131 and the second electrode protective tube 132 communicated by the bridge part 133 and supplies the protective gas. You may The processing of the substrate 10 may be performed at a high temperature of 600° C. or higher, and the power supply electrode 121 and/or the ground electrode 122 made of metal such as nickel (Ni) may be oxidized at a high temperature of 600° C. or higher. good too. Accordingly, the protective gas can be supplied into either one of the electrode protection tubes 131 or 132 via the protective gas supply unit 141 to prevent the power supply electrode 121 and the ground electrode 122 from being oxidized. Here, the protective gas supplied to either one of the electrode protection tubes 131 or 132 passes through the bridge portion 133 (or via the bridge portion) to the remaining other electrode protection tube 132 or 131. can flow.

The protective gas exhaust part 142 is connected to the other electrode protection tube 132 or 131 of the first electrode protection tube 131 and the second electrode protection tube 132 to remove the electrode protection tube 131 or 132 The protective gas supplied to may be evacuated. Here, the protective gas exhaust section 142 exhausts the protective gas that has been supplied to one of the electrode protection tubes 131 or 132 and has flowed through the bridge section 133 to the remaining electrode protection tube 132 or 131. It may be vented.

In the present invention, one of the electrode protection tubes 131 or 132, the bridge section 133, and the other electrode protection tube 132 or 131 through the protective gas supply section 141, the bridge section 133, and the protective gas exhaust section 142 may form a flow path for the protective gas through the . Through this, the protective gas can effectively flow into the first electrode protection tube 131 and the second electrode protection tube 132 to effectively prevent the power supply electrode 121 and the ground electrode 122 from being oxidized.

In the conventional three-electrode structure, when a plurality of first electrode protection tubes 131 and a second electrode protection tube 132 are connected together by a bridge portion 133, the above-described gas flowing through each of the plurality of first electrode protection tubes 131 is achieved. The flow rate of the protective gas and the flow rate of the protective gas flowing through the second electrode protection tube 132 are inevitably different, and the different flow rates may cause the flow of the protective gas not to be smooth. As a result, the oxidation of the power supply electrode 121 and the ground electrode 122 cannot be effectively prevented. In addition, the different flow rates of the protective gases in the first electrode protective tube 131 and the second electrode protective tube 132 may affect the formation of plasma, preventing the process gas from being effectively decomposed. There is also fear.

However, in the present invention, since the bridge portion 133 connects one first electrode protection tube 131 and one second electrode protection tube 132 together, either one of the electrode protection tubes 131 or 132 is connected to the protective gas supply unit 141, and the other electrode protective tube 132 or 131 is connected to the protective gas exhaust unit 142, so that one of the electrode protective tubes 131 or 132, the bridge part 133 , the flow of the protective gas through the remaining other electrode protective tube 132 or 131 is facilitated. As a result, the oxidation of the power supply electrode 121 and the ground electrode 122 can be effectively prevented, and the protective gas does not affect plasma formation, thereby effectively decomposing the process gas. be able to.

Here, the protective gas may include an inert gas, and the inert gas may be nitrogen ( _N2 ), argon (Ar), or the like. By supplying an inert gas such as nitrogen (N ₂ ) into the first electrode protection tube 131 and the second electrode protection tube 132, Oxygen (O ₂ ) can be prevented from flowing in and being congested. Through this, it is possible to prevent the power supply electrode 121 and the ground electrode 122 from reacting with oxygen (O ₂ ) and being oxidized.

A batch-type substrate processing apparatus 100 according to the present invention includes a high-frequency power supply unit 150 that supplies high-frequency power, and a high-frequency power supply unit 150 that is disposed between the high-frequency power supply unit 150 and a plurality of power supply electrodes 121 , and supplies power from the high-frequency power supply unit 150 . A power distribution unit 155 that distributes the high-frequency power and supplies it to each of the plurality of power supply electrodes 121a and 121b may be further provided.

The high-frequency power supply unit 150 may supply high-frequency power (power), and the supplied high-frequency power may be applied (or supplied) to the plurality of power supply electrodes 121 . When the high-frequency power (or power) is supplied (or applied) to the power supply electrode 121, an electric field or a magnetic field can be generated between the power supply electrode 121 and the ground electrode 122. A capacitively coupled plasma (CCP) can be generated by the electric field generated by the

When high-frequency power is supplied to each of the power supply electrodes 121 (for example, a four-electrode structure in which two ground electrodes are positioned between two power supply electrodes), the high-frequency power is supplied to the power supply electrodes 121. Each may be supplied separately. As a result, the power required to form (or generate) plasma or the power to obtain a desired amount of radicals can be reduced. The generation of particles can be reduced or prevented as compared with the case of supplying (or applying) . In addition, plasma can be formed in more (or wider) spaces (or areas) than when plasma is formed by one power supply electrode 121 and one ground electrode 122, and the process is more effective. Can decompose gas.

For example, the high frequency power supply section 150 may supply high frequency power having a frequency selected from a range of 4 to 40 MHz to each of the plurality of power supply electrodes 121a and 121b. When the frequency of the high-frequency power source is higher than 40 MHz, the imaginary part Zn' of the overall impedance Zn is too low even in the case of a four-electrode structure having two power supply electrodes 121, causing a problem in plasma ignition. On the other hand, when the frequency of the high-frequency power source is less than 4 MHz, the imaginary part Zn' of the overall impedance Zn becomes too large, and even if the number of power supply electrodes 121 increases, the minimum overall impedance The imaginary part Zn' of Zn cannot be achieved. That is, the circumference (length) of the reaction tube 110 is determined according to the size (or circumference) of the substrate 10 , and the maximum number of power supply electrodes 121 is determined according to the circumference of the reaction tube 110 . Depending on the limit to which the number of powered electrodes 121 can be increased, this results in a minimum overall impedance of It can no longer be reduced to the imaginary part Zn' of Zn.

Therefore, the high-frequency power supply unit 150 can supply high-frequency power having a frequency selected from the range of 4 to 40 MHz to each of the plurality of power supply electrodes 121a and 121b. As the number of power supply electrodes 121 increases, the number of plasma generating spaces increases. level) of the plasma must be given. For this purpose, each power supply electrode 121 may be supplied with high-frequency power having the same frequency (or an error range of ±10%).

For example, in the case of a four-electrode structure in which two ground electrodes 122 are positioned between two power supply electrodes 121, each power supply electrode 121 is supplied with a high frequency power having a frequency of about 27 MHz (or 27.12 MHz). may be supplied.

The power distribution unit 155 may be disposed between the high frequency power supply unit 150 and the plurality of power supply electrodes 121, and distributes the high frequency power supplied from the high frequency power supply unit 150 to each of the plurality of power supply electrodes 121a. , 121b. Here, the power splitter 155 may be a power splitter and is disposed between the high frequency power source 150 and the plurality of power supply electrodes 121 to supply power from the high frequency power source 150 (or The high frequency power that is output) can be distributed. The high frequency power distributed through this may be applied to each of the plurality of power supply electrodes 121a, 121b. In such a case, the same power supply (or voltage) is supplied (or applied) to each of the plurality of power supply electrodes 121a and 121b, so that the power supply electrodes 121 and the ground electrode 122 are connected to each other. A uniform plasma can be formed in the space.

FIG. 5 is a conceptual diagram for explaining the supply of high frequency power according to an embodiment of the present invention. FIG. FIG. 5B shows a case in which high-frequency power is supplied to each of the supply electrodes, and FIG. ) is a case in which a plurality of variable capacitors are used to supply high-frequency power to a plurality of power supply electrodes, respectively.

Referring to FIG. 5, as shown in FIG. 5B, high-frequency power may be supplied to a plurality of power supply electrodes 121a and 121b through a plurality of high-frequency power supply units 150a and 150b. Due to the difference in performance between the high-frequency power supply units 150a and 150b, different power supplies may be supplied to the plurality of power supply electrodes 121a and 121b, respectively. As a result, non-uniform plasma having different plasma densities may be formed in the spaces between the power supply electrodes 121 and the ground electrodes 122 . Further, when plasma is discharged by supplying high frequency power to each of the plurality of power supply electrodes 121a and 121b through the plurality of high frequency power supply units 150a and 150b, all plasma is formed due to the low impedance of the high frequency power supply. Plasma cannot be generated in a well-balanced space between the power supply electrode 121 and the ground electrode 122 by concentrating on the side where the plasma is applied. In addition, the power supply electrode 121 and the ground electrode 122 that generate plasma are likely to be electrically damaged.

However, if the high-frequency power supplied from one high-frequency power supply unit 150 is distributed through the power distribution unit 155 and supplied to the plurality of power supply electrodes 121a and 121b, respectively, the same power supply is applied to the plurality of power supply electrodes 121. can be supplied, and a uniform plasma can be formed in the space between each power supply electrode 121 and the ground electrode 122 .

On the other hand, various (external) factors may cause variations in the formation of plasma in the spaces between the power supply electrodes 121 and the ground electrodes 122. There is also a possibility that the plasma densities respectively formed in the spaces between the electrodes 122 may vary. In particular, when at least a part of the power supply electrode 121 is arranged outside the partition 115, the partition 115 may be positioned in a space between the power supply electrode 121 and the ground electrode 122. Interference by 115 may further exacerbate plasma density variations in the space between the power supply electrode 121 and the ground electrode 122 . In such a case, by adjusting the magnitude or ratio of the high-frequency power (or power) supplied to each of the plurality of power supply electrodes 121a and 121b through the power distributor 155, each of the plurality of power supply electrodes is controlled. 121a, 121b. Through this, uniform plasma can be formed in the spaces between the power supply electrodes 121 and the ground electrodes 122 .

When the plasma densities formed in the spaces between the power supply electrodes 121 and the ground electrodes 122 do not vary, the high frequency power output from the single high frequency power supply section 150 is evenly distributed. may be supplied to each of the plurality of power supply electrodes 121a and 121b. Here, the high-frequency power supply unit 150 may apply pulse-like RF power to the plurality of power supply electrodes 121, and apply the power by adjusting the width and duty ratio of the pulse. may

Here, the power distribution unit 155 has a distribution point 155b at which the high-frequency power is distributed to the plurality of power supply electrodes 121a and 121b, respectively, and at least one power supply electrode 121a or 121b of the plurality of power supply electrodes 121. There may be a variable capacitor 155a disposed therebetween. The variable capacitor 155a is arranged between a distribution point 155b at which high-frequency power is distributed to the plurality of power supply electrodes 121a and 121b, respectively, and at least one power supply electrode 121a or 121b of the plurality of power supply electrodes 121. may be The variable capacitor 155 a may change the capacitance (or storage capacity) to adjust the magnitude or ratio of the high frequency power supplied from the high frequency power unit 150 .

For example, one variable capacitor 155a may be disposed in the power divider 155 as shown in FIG. 5(a). That is, between the distribution point 155b and one of the power supply electrodes 121a or 121b of the plurality of power supply electrodes 121, a fixed capacitor 155c is disposed, A variable capacitor 155a may be arranged between the remaining power supply electrode 121b or 121a. Through this, the variable capacitor 155a is adjusted according to the plasma density formed in the space between one of the power supply electrodes 121a or 121b and the ground electrode 122a or 122b, and the other power supply is performed. The plasma density formed in the space between the electrode 121b or 121a and the ground electrode 122b or 122a can be adjusted. At this time, the plasma density formed in the space between the other remaining power supply electrode 121b or 121a and the ground electrode 122b or 122a will be 122b may be adjusted to be the same as the plasma density formed in the space between 122b.

On the other hand, the variable capacitors 155a may be configured in a plurality as shown in FIG. 5C, and may be arranged corresponding to the plurality of power supply electrodes 121a and 121b, respectively. may be connected (or arranged) between a distribution point 155b to which high-frequency power supplied from the high-frequency power supply unit 150 is distributed and the plurality of power supply electrodes 121, respectively. Here, the plurality of variable capacitors 155a may adjust the magnitude or ratio of the high frequency power supplied from the electrically connected high frequency power unit 150. FIG.

In the present invention, a variable capacitor 155a is provided at the rear end (or after) of the distribution point 155b and between the distribution point 155b and at least one power supply electrode 121a or 121b of the plurality of power supply electrodes 121. By disposing, the plasma density in the space between each power supply electrode 121 and the ground electrode 122 can be adjusted (or adjusted).

The batch-type substrate processing apparatus 100 according to the present invention may further include a controller 160 that selectively adjusts the high frequency power supplied to each of the plurality of power supply electrodes 121a and 121b according to the state of the plasma. good.

The controller 160 may selectively adjust the high frequency power supplied to each of the plurality of power supply electrodes 121a and 121b according to the state of the plasma such as discharge current, discharge voltage and phase. Here, the control unit 160 is connected to the power distribution unit 155 and adjusts the variable capacitor 155a to adjust the magnitude or ratio of the high frequency power supplied to each of the plurality of power supply electrodes 121a and 121b. good too.

For example, the batch-type substrate processing apparatus 100 of the present invention may further include a plasma measuring unit (not shown) for measuring the plasma density in each space between the power supply electrode 121 and the ground electrode 122. Preferably, the control unit 160 may adjust the high frequency power supplied to each of the plurality of power supply electrodes 121a and 121b according to the plasma density measured by the plasma measurement unit (not shown).

A plasma measurement unit (not shown) may measure the plasma density in each space between the power supply electrode 121 and the ground electrode 122, and determine discharge specific values such as discharge current, discharge voltage, and phase. may be measured to determine plasma density. For example, the plasma measuring unit (not shown) may have a probe bar, and the probe bar is arranged in the space between each power supply electrode 121 and the ground electrode 122 to detect the probe. A discharge characteristic value of the plasma formed in the space between the power supply electrode 121 and the ground electrode 122 from the needle bar may be measured. Through this, a plasma measuring unit (not shown) can measure (or measure) the plasma density.

The control unit 160 receives the plasma density measured by the plasma measurement unit (not shown) and adjusts the high frequency power supplied to each of the plurality of power supply electrodes 121a and 121b according to the measured plasma density. may At this time, the control unit 160 may be connected to the power distribution unit 155 and adjust the magnitude or ratio of the high frequency power supplied to each of the plurality of power supply electrodes 121a and 121b by adjusting the variable capacitor 155a. may For example, the probe rods may be arranged in spaces between the power supply electrodes 121 and the ground electrodes 122 so that the magnitude or ratio of the high frequency power can be adjusted through the variable capacitor 155a. As a result, the discharge characteristic value (for example, discharge current, discharge voltage, phase, etc.) and/or the plasma density of the plasma formed in the space between the power supply electrode 121 and the ground electrode 122 from the probe rod can be measured to adjust the magnitude or ratio of the high frequency power supplied to each of the plurality of power supply electrodes 121a, 121b.

In the present invention, it is possible to uniformly vary and adjust the vapor deposition of radicals necessary for the treatment process of the substrate 10 by controlling the magnitude or ratio of the high frequency power supplied to each of the plurality of power supply electrodes 121a and 121b. Therefore, it is possible to solve the problem that the plasma density distribution varies.

The batch-type substrate processing apparatus 100 according to the present invention supplies the process gas decomposed by the plasma through the discharge port 171 toward the space between the power supply electrode 121 and the ground electrode 122 respectively. A further gas supply pipe 170 may be provided.

A plurality of gas supply pipes 170 may supply the process gas to each space between the power supply electrode 121 and the ground electrode 122 through the outlets 171 . At this time, the plurality of gas supply pipes 170 may supply the process gas to each space between the power supply electrode 121 and the ground electrode 122, and the supplied process gas may be the power supply gas. It may be decomposed by plasma in each of the spaces between the supply electrode 121 and the ground electrode 122 . In addition, the plurality of gas supply pipes 170 may be provided with outlets 171, and the outlets 171 may be in the form of slits extending in the longitudinal direction of the reaction tube 110. and arranged in the longitudinal direction of the reaction tube 110 . The discharge port 171 may supply (or discharge) the process gas supplied through the flow path of the gas supply pipe 170 to the discharge space 125 . At this time, the ejection port 171 may be formed toward the space between the power supply electrode 121 and the ground electrode 122, and may be formed in the space between the power supply electrode 121 and the ground electrode 122. Gas may be supplied.

For example, a plurality of gas supply pipes 170 may be disposed outside the discharge space 125, extending in the longitudinal direction of the reaction tube 110 and connecting along the arrangement of the power supply electrode 121 and the ground electrode 122. to the outside (on the line) in the width direction of the reaction tube 110 . At this time, the discharge port 171 of the gas supply pipe 170 may be arranged to face each space between the power supply electrode 121 and the ground electrode 122 . The gas supply pipe 170 may supply the process gas to the discharge space 125 so that the process gas necessary for the process of processing the substrate 10 can be decomposed in the plasma forming part 120 . At this time, when the discharge space 125 is filled with the process gas supplied from the plurality of gas supply pipes 170, the predetermined high-frequency power is supplied to each of the plurality of power supply electrodes 121a and 121b to form a pair ( Alternatively, plasma may be formed between the power supply electrode 121 and the ground electrode 122 that face each other. In addition, the process gas excited into a plasma state and decomposed may be supplied to the inside of the processing space 111 to perform the processing of the substrate 10 .

A plurality of gas supply pipes 170 are arranged outside in the width direction of the reaction tube 110 from a line connecting along the arrangement of the power supply electrode 121 and the ground electrode 122, and the discharge port 171 of the gas supply pipe 170 When the space between the power supply electrode 121 and the ground electrode 122 is arranged to face each of them, the discharge port 171 of the gas supply pipe 170 is located in the space between the power supply electrode 121 and the ground electrode 122. The process gas can be directly supplied (or reached) to the space between the power supply electrode 121 and the ground electrode 122 . This allows the plasma decomposition rate for the process gas to be increased. That is, the process gas supplied through the discharge port 171 of the gas supply pipe 170 is applied to the space between the power supply electrode 121 and the ground electrode 122 where plasma is generated (or formed) (that is, the plasma). Since it can be supplied directly to the plasma generation space), it is possible to shorten the time for the process gas to reach the plasma generation space to be decomposed. As a result, it is possible to improve the decomposition rate of the process gas and the associated plasma decomposition rate.

In addition, a plurality of gas supply pipes 170 are arranged outside in the width direction of the reaction tube 110 from a line connecting along the arrangement of the power supply electrode 121 and the ground electrode 122, and the discharge port 171 of the gas supply pipe 170 is Discharge spaces 125 surrounded by the barrier ribs 115 can be narrowed by arranging them so as to face the space between the power supply electrode 121 and the ground electrode 122, respectively. Accordingly, the time for the process gas supplied to the discharge space 125 to spread evenly can be shortened, and the time for the process gas to be plasma-decomposed and applied to the process space 111 can also be shortened. FIG. 1 illustrates a case where these gas supply pipes 170 protrude from the outer surface of the reaction tube 110 and are arranged between the power supply electrode 121 and the ground electrode 122, respectively. However, if it can be arranged between the power supply electrode 121 and the ground electrode 122 and, at the same time, can be arranged outside from the extension line of the power supply electrode 121 and the ground electrode 122, the position is particularly Not limited.

The process gas may contain one or more gases, may contain a source gas and/or a reaction gas that reacts with the source gas, and the source gas and the reaction gas react to form a thin film. may be formed. Here, the process gas decomposed by the plasma may be a reaction gas, and the source gas may be directly supplied to the processing space 111 through a separate source gas supply pipe 175 . Unlike the source gas supply pipe 175 that supplies the source gas to the processing space 111 immediately, the gas supply pipe 170 first supplies the reaction gas (or the process gas) to the discharge space 125 in the plasma forming part 120 . may At this time, the reaction gas may be activated by plasma and supplied to the processing space 111 . For example, if the thin film material to be deposited on the substrate 10 is silicon nitride, the source gas may be a silicon-containing gas (or silicon-containing gas) such as dichlorosilane (SiH ₂ Cl ₂ , DCS). ), and the reaction gas may include a nitrogen-containing gas (such as NH ₃ , N ₂ O, NO).

In the present invention, by supplying the reaction gas, such as NH ₃ , N ₂ O, and NO, which has a decomposition temperature higher than that of the source gas, which is decomposed even at a low temperature, to the plasma forming part 120, , the reaction gas can be effectively decomposed by the plasma forming unit 120 and supplied to the processing space.

Meanwhile, the batch type substrate processing apparatus 100 of the present invention may further include heating means (not shown) surrounding the reaction tube 110 to heat the plurality of substrates 10 . In addition, the substrate boat 50 may be rotated by rotating means (not shown) to be connected to the bottom of the substrate boat 50 for uniformity of the substrate 10 processing process.

The plasma forming part 120 is arranged in the longitudinal direction of the reaction tube 110 so as to deviate from the discharge direction of the discharge port 171 and generate radicals in the process gas decomposed by the plasma into the processing space 111 . A plurality of injection ports 123 for supplying may be provided. The plurality of injection ports 123 may be arranged in the longitudinal direction of the reaction tube 110 , may supply radicals in the process gas decomposed by the plasma into the processing space 111 , and may be aligned with the discharge direction of the discharge ports 171 . They may be arranged so as to be offset. Here, the plurality of injection ports 123 may be arranged in a plurality of rows arranged in the longitudinal direction of the reaction tube 110, and each row may be spaced apart from each other in the circumferential direction of the reaction tube 110. may be set.

That is, the injection port 123 and the discharge port 171 may be arranged so as to be offset from each other in the radial direction from the central axis of the reaction tube 110 , and the radial direction from the central axis of the reaction tube 110 to the injection port 123 may be different. and the radial direction from the central axis of the reaction tube 110 to the discharge port 171 may be offset from each other. For example, the plurality of injection ports 123 are formed at different heights in the longitudinal direction of the reaction tube 110 corresponding to the unit processing spaces of the substrate boat 50, and extend in the longitudinal direction of the reaction tube 110. It may be arranged at a position corresponding to at least one of the plurality of electrodes 121 and 122 . In such a case, since the outlet 171 of the gas supply pipe 170 is arranged to face the space between the power supply electrode 121 and the ground electrode 122, the plurality of outlets 123 can It may be arranged so as to deviate from the ejection direction of 171 . If the positions of the plurality of injection ports 123 and the ejection ports 171 do not correspond to each other and are shifted from each other, the process gas supplied to the discharge space 125 through the ejection ports 171 will immediately enter the processing space 111 through the injection ports 123 . Radicals (only) can be supplied to the processing space 111 through the injection port 123 after having a sufficient time for plasma decomposition without escaping, thereby further improving plasma decomposition efficiency. be able to.

FIG. 6 is a horizontal sectional view showing a modification of multiple gas supply pipes according to one embodiment of the present invention.

Referring to FIG. 6, the batch-type substrate processing apparatus 100 according to the present invention is disposed on both sides of a plurality of electrodes 121 and 122 along the circumferential direction of the reaction tube 110 , and through outlets 171 . A plurality of gas supply pipes 170 for supplying the process gas decomposed by the plasma into the discharge space 125 may be further provided.

The plurality of gas supply pipes 170 may be arranged along the circumferential direction of the reaction tube 110 like the plurality of electrodes 121 and 122, and the process gas necessary for the process of processing the substrate 10 is supplied to form the plasma. A plurality of electrodes 121 and 122 are arranged at intervals in the circumferential direction of the reaction tube 110 so as to be decomposed in the portion 120 , and the plasma is discharged through the discharge port 171 through the discharge port 171 . may be supplied into the discharge space 125 to be decomposed by the process gas.

When the discharge space 125 is filled with the process gas supplied from the plurality of gas supply pipes 170, the process gas is plasma-decomposed by supplying a predetermined high-frequency power to each of the plurality of power supply electrodes 121a and 121b. good too. The process gas decomposed in this way may be supplied to the processing space 111 to perform the processing of the substrate 10 .

The plurality of gas supply pipes 170 may be provided with outlets 171, and the outlets 171 may be slit-shaped extending in the longitudinal direction of the reaction tube 110. may be arranged in the longitudinal direction of the reaction tube 110. The discharge port 171 may supply the process gas supplied through the flow path of the gas supply pipe 170 to the discharge space 125 .

Here, when the gas supply pipe 170 is disposed inside the barrier rib 115 (that is, the discharge space), the discharge port 171 may be formed to face in the opposite direction to the power supply electrode 121 . If the outlets 171 of the gas supply pipes 170 arranged outside the power supply electrodes 121 are arranged to face the partition wall 115 , the process gas supplied from the outlets 171 faces the outlets 171 . The process gas can be evenly distributed in the entire space of the discharge space 125 by gradually spreading from the barrier ribs 115 to the central region of the discharge space 125 . This allows all the process gases to be plasma-decomposed and provided to the process space 111 .

Conversely, when the outlets 171 of the gas supply pipes 170 arranged outside the power supply electrodes 121 are not formed at positions facing the partition wall 115 but at positions facing the power supply electrodes 121, In other words, the process gas does not have enough time to spread into the discharge space 125 and be plasma-decomposed, and immediately escapes to the processing space 111 through the injection port 123 of the plasma forming part 120 . As a result, the process gas may be wasted and the process efficiency may be reduced.

However, in the present invention, the gas supply pipe 170 is provided with the discharge port 171 facing the partition wall 115, so that the process gas can be immediately discharged into the processing space 111 through the injection port 123 of the plasma generating section 120. Instead, the discharge space 125 can be evenly filled from the peripheral region (that is, the partition facing the discharge port) to the central region. As a result, the process gas can be retained in the discharge space 125 with increased time, and as a result, plasma decomposition efficiency of the process gas can be improved.

In addition, when the gas supply pipe 170 is disposed outside the barrier rib 115 (that is, outside the sub-side wall portion of the barrier rib), the process gas can be supplied to the discharge space 125 in the barrier rib 115 . Here, the ejection port 171 may face the power supply electrode 121 . In this case, the gas supply pipe 170 is disposed outside the sub-side walls 115a and 115b of the barrier rib 115 so that the process gas can be immediately supplied to the discharge space 125 in the barrier rib 115. A uniform pressure can be formed in the discharge space 125 within a short time without forming a vortex. In addition, the discharge space 125 can be narrowed by arranging the gas supply pipe 170 outside the partition wall 115, so that a uniform pressure can be formed in the discharge space 125 within a short time.

Here, the plurality of gas supply pipes 170 may be symmetrically arranged on both sides of the radial direction CC' extending from the center axis C of the reaction tube 110 to the center of the discharge space 125. FIG. At this time, the plurality of electrodes 121 and 122 may also be symmetrically arranged on both sides of the radial direction CC′ extending in the center of the discharge space 125 . When a plurality of gas supply pipes 170 are arranged symmetrically with respect to the radial direction C-C' extending in the center of the discharge space 125, the process gas can flow into spaces (or regions) on both sides of the discharge space 125. ), and the process gas can be effectively distributed in the discharge space 125 . In addition, since the plurality of electrodes 121 and 122 are symmetrically arranged on both sides of the radial direction CC' extending in the center of the discharge space 125, the plasma uniformity of the spaces on both sides of the discharge space 125 is improved. can be improved. As a result, the amount of radicals supplied (or passing through) between the plurality of injection ports 123 formed in the plasma generating section 120 and supplying radicals to the processing space 111 becomes uniform.

Meanwhile, the batch-type substrate processing apparatus 100 of the present invention may further include an exhaust unit 180 communicating with the reaction tube 110 to exhaust process residues in the processing space 111 to the outside.

The exhaust unit 180 may communicate with the processing space 111 to exhaust process residues in the processing space 111 to the outside. Here, the exhaust part 180 may be arranged to face the plasma forming part 120 .

The exhaust part 180 may include an exhaust member 181 extending in the longitudinal direction of the reaction tube 110, an exhaust line 182 connected to the exhaust member 181, and an exhaust pump (not shown). The exhaust member 181 faces the plurality of injection ports 123 of the plasma forming section 120 and is arranged in the longitudinal direction (that is, the vertical direction) of the reaction tube 110 corresponding to the unit processing space of the substrate boat 50 . An exhaust port 183 may be provided. Accordingly, the process gas decomposed in the plasma forming part 120 and supplied to the plurality of substrates 10 through the plurality of injection ports 123 can be sucked into the plurality of exhaust ports 183 through the substrates 10 . .

Therefore, the plurality of injection ports 123 of the plasma forming unit 120 and the plurality of exhaust ports 183 of the exhaust unit 180 correspond to each other and cross the first direction in which the substrates 10 are stacked (or the longitudinal direction of the reaction tube). Since the radicals are located on the same line in the second direction (for example, the direction parallel to the surface of the substrate), the radicals injected from the injection port 123 flow into the exhaust port 183 to form a laminar flow. It becomes possible to That is, the radicals injected from the injection port 123 can flow in a direction parallel to the surface of the substrate 10, and can be uniformly supplied to the upper surface of the substrate 10. After contacting the surface of the substrate 10 , it can move along the substrate 10 and flow into the exhaust port 183 .

As described above, in the present invention, after the process gas is decomposed by plasma in the discharge space partitioned from the processing space, the process gas is supplied to the inside of the processing space, so that the particles are peeled off from the thin film deposited on the inner wall of the reaction tube. It can prevent dropping and improve the efficiency of the processing process for the substrate. Further, by arranging a plurality of ground electrodes between a plurality of power supply electrodes separated from each other and arranging a ground electrode corresponding to each of the plurality of power supply electrodes, the ground electrodes can be used in common. As a result, it is possible to prevent a double electric field from being led to the ground electrode. As a result, it is possible to suppress or prevent plasma damage caused by the plasma potential that increases in proportion to the electric field, thereby extending the life of the plasma forming portion. On the other hand, by lowering the applied voltage using a plurality of power supply electrodes, the sputtering effect can be reduced, and the process time can be shortened using high plasma density and radicals. Also, the plasma decomposition rate can be improved by supplying the process gas to the space between the power supply electrode and the ground electrode through the plurality of gas supply pipes. Furthermore, by arranging the plurality of ejection ports of the plasma generating portion so as to deviate from the ejection direction of each of the ejection ports formed in the plurality of gas supply pipes, the process gas that is not plasma-decomposed can flow into the processing space. Instead, radicals can be supplied to the interior of the processing space after the process gas has been sufficiently decomposed. On the other hand, by distributing the high-frequency power supplied from one high-frequency power supply unit through the power distribution unit and supplying it to a plurality of power supply electrodes, a uniform plasma is generated in the space between the power supply electrode and the ground electrode. can be formed.

Although the preferred embodiments of the present invention have been illustrated and described above, the present invention is by no means limited to the above-described embodiments. Those of ordinary skill in the art to which this invention pertains will appreciate that various modifications may be made and other equivalent embodiments may be employed. Therefore, the technical protection scope of the present invention should be defined by the following claims.

10: Substrate 50: Substrate boat 100: Batch-type substrate processing apparatus 110: Reaction tube 111: Processing space 115: Partition 115a, 115b: Sub-side walls 115c: Main side walls 120: Plasma formation unit 121: Power supply electrode 122: Ground Electrode 123: Injection port 125: Discharge space 130: Electrode protection part 131: First electrode protection tube 132: Second electrode protection tube 133: Bridge part 141: Protective gas supply part 142: Protective gas exhaust part 150: High frequency power supply Part 155: Power distribution part 155a: Variable capacitor 155b: Distribution point 155c: Fixed capacitor 160: Control part 170: Gas supply pipe 171: Discharge port 175: Source gas supply pipe 180: Exhaust part 181: Exhaust member 182: Exhaust line 183 :exhaust port

Claims (11)

a reaction tube that provides a processing space that accommodates a plurality of substrates;
a plasma forming part having a discharge space separated from the processing space by a partition wall extending along the longitudinal direction of the reaction tube, and forming plasma in the discharge space by means of a plurality of electrodes extending along the longitudinal direction of the reaction tube; ,
with
the plurality of electrodes,
a plurality of spaced apart power supply electrodes;
a plurality of ground electrodes disposed between the plurality of power supply electrodes and spaced apart from the plurality of power supply electrodes ;
with
the plurality of electrodes forming a capacitively coupled plasma (CCP) in each of the spaced spaces between spaced apart power supply electrodes and ground electrodes in the discharge space;
The batch-type substrate processing apparatus , wherein the plurality of ground electrodes are spaced apart from each other by a distance equal to or less than the distance between the power supply electrode and the ground electrode . further comprising an electrode protection unit that protects the plurality of power supply electrodes and the plurality of ground electrodes;
The electrode protection part is
a plurality of first electrode protection tubes respectively enclosing the plurality of power supply electrodes;
a plurality of second electrode protection tubes respectively enveloping each of the plurality of ground electrodes;
a bridge portion connecting the first electrode protection tube and the second electrode protection tube facing each other;
The batch type substrate processing apparatus according to claim 1, comprising: The bridge portion communicates the first electrode protection tube and the second electrode protection tube,
a protective gas supply unit connected to either one of the first electrode protective tube and the second electrode protective tube communicated by the bridge section and supplying protective gas;
a protective gas exhaust unit connected to the other one of the first electrode protective tube and the second electrode protective tube to exhaust the protective gas supplied to one of the electrode protective tubes; When,
The batch type substrate processing apparatus according to claim 2 , further comprising: 4. The batch type substrate processing apparatus of claim 3 , wherein the protective gas includes an inert gas. a high-frequency power supply that supplies high-frequency power;
a power distribution unit disposed between the high-frequency power supply unit and the plurality of power supply electrodes, the power distribution unit distributing the high-frequency power supplied from the high-frequency power supply unit to each of the plurality of power supply electrodes;
The batch type substrate processing apparatus according to claim 1, further comprising: The power distributor comprises a variable capacitor disposed between a distribution point at which the high-frequency power is distributed to each of the plurality of power supply electrodes and at least one of the plurality of power supply electrodes. 6. The batch type substrate processing apparatus according to 5. 2. The batch type substrate processing apparatus of claim 1, further comprising a controller for selectively adjusting the high frequency power supplied to each of the plurality of power supply electrodes according to the state of the plasma. 2. The batch according to claim 1 , further comprising a plurality of gas supply pipes for supplying the process gas to be decomposed by the plasma through a discharge port toward each space between the power supply electrode and the ground electrode. type substrate processing equipment. The plasma forming part is
a plurality of injection ports arranged in the longitudinal direction of the reaction tube for supplying radicals in the process gas decomposed by the plasma to the processing space ;
9. The batch type substrate processing apparatus according to claim 8 , wherein the plurality of injection ports are arranged on a segment other than a line connecting the center axis of the reaction tube and the ejection port . A plurality of gas supply pipes disposed along the circumferential direction of the reaction tube on both sides of the plurality of electrodes to supply a process gas decomposed by the plasma into the discharge space through a discharge port. The batch type substrate processing apparatus according to claim 1, further comprising: 11. The batch type substrate processing apparatus according to claim 8 , wherein the plurality of gas supply pipes are symmetrically arranged on both sides in the radial direction extending from the central axis of the reaction tube to the center of the discharge space. .

Images