JP7111601B2 - Heating device and cell culture device - Google Patents

Description

TECHNICAL FIELD The present invention relates to a heating device and a cell culture device using the same.

In general, temporal and spatial control techniques such as patterning at the submicron scale are important. For example, local temperature control and local arrangement control of cells are technologies that can be used in various fields such as the medical field and electrical/electronic engineering.

For example, Patent Literature 1 describes the formation of a pattern of hydrophilic regions and hydrophobic regions on the surface of a substrate to vary the adhesion strength of the cells to the substrate, thereby patterning the cells.

JP 2014-103857 A

The present inventor has studied in detail the configuration of a heating device and a cell culture device using the same. It is desired to improve the performance of the heating device and the cell culture apparatus using the same by devising the configuration of the heating device.

Other problems and novel features will become apparent from the description of the specification and the accompanying drawings.

A heating device according to one embodiment has a heat generating portion composed of a plurality of first magnetic body portions, the plurality of first magnetic body portions has a patterned arrangement structure, and an alternating magnetic field generates the plurality of heat generating portions. A portion of the first magnetic body portion selectively generates heat.

According to one embodiment, the performance of the heating device and the cell culture device can be improved.

1 is a schematic perspective view showing a heating device according to an embodiment; FIG. It is a see-through|perspective perspective schematic diagram which shows the heating apparatus which concerns on one Embodiment. 1 is a transparent perspective schematic diagram showing a main part of a heating device according to an embodiment; FIG. 1 is a cross-sectional view of a main part showing a heating device according to an embodiment; FIG. 1 is a cross-sectional view of a main part showing a heating device according to an embodiment; FIG. 4 is a graph showing magnetic flux density penetrating through the first magnetic layer when an external magnetic field is applied in the heating device according to the embodiment. 5 is a graph showing the magnetic flux density penetrating through the magnetic body when an external magnetic field is applied when the second magnetic layer has a magnetization vector directed upward in the perpendicular direction in the heating device of one embodiment. 4 is a graph showing the magnetic flux density penetrating through the magnetic body when an external magnetic field is applied when the second magnetic layer has a magnetization vector directed downward in the perpendicular direction in the heating device of one embodiment. 1 is a cross-sectional view of a main part of a heating device according to an embodiment; FIG. BRIEF DESCRIPTION OF THE DRAWINGS It is a perspective see-through|perspective schematic diagram of the cell culture apparatus which concerns on one embodiment. BRIEF DESCRIPTION OF THE DRAWINGS It is a cross-sectional schematic diagram of the cell culture apparatus which concerns on one embodiment. 1 is a cross-sectional view of a main part of a cell culture device according to one embodiment; FIG. It is a principal part cross-sectional schematic diagram which shows operation|movement of the cell culture apparatus which concerns on one embodiment. 1 is a schematic plan view showing cells cultured in a cell culture device according to an embodiment; FIG. 1 is a schematic plan view showing cells cultured in a cell culture device according to an embodiment; FIG. FIG. 11 is a cross-sectional view of a main part of a heating device according to a second modified example; FIG. 11 is a transparent perspective schematic diagram showing a main part of a heating device according to a third modified example; FIG. 11 is a cross-sectional view of a main part of a heating device according to a third modified example; It is a plane schematic diagram which shows the heating apparatus which concerns on 2nd Embodiment. 20 is an enlarged schematic plan view showing a region A in FIG. 19 in the heating device according to the second embodiment; FIG. FIG. 5 is a cross-sectional view of a main part showing a heating device according to a second embodiment; FIG. 5 is a cross-sectional view of a main part showing a heating device according to a second embodiment;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, in all the drawings for describing the embodiments, members having the same functions are denoted by the same reference numerals, and repeated description thereof will be omitted. In addition, in the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

(to be considered)
<About the heating device>
Before describing the embodiments, the matters examined by the inventors will be described below.

As mentioned above, local temperature control is a technology that can be used in various fields, but it is difficult to realize. As an example of investigation, the present inventor examined a heating apparatus having a heat generating portion composed of a plurality of conductors, and a heating apparatus having a patterned array structure of the plurality of conductors. With the heating device of the study example, any conductor can be heated (resistance heating) by passing a current through each conductor, which is a heating element, and local temperature control becomes possible.

However, in order to allow current to flow through each conductor, it is necessary to connect wires and electrodes, which are also conductors, to each conductor. Since conduction electrons are mainly responsible for heat conduction in a conductor, there is a problem that heat diffuses from the heated conductor to wiring and electrodes. As a result, not only is it difficult to increase the heating efficiency of the conductor, but there is also the problem of difficulty in controlling the temperature of the conductor. In particular, these problems appear conspicuously on the submicron scale.

From the above, it is desired to provide an apparatus capable of locally heating by devising the heating method and the structure of the object to be heated.

<About the cell culture device>
As described above, according to the technique described in Patent Document 1, patterning of cells is possible. However, in the technique described in Patent Document 1, although a predetermined region can be made hydrophilic or hydrophobic in advance, the hydrophilic region can be changed to a hydrophobic region (or the hydrophobic region can be made hydrophilic). domain) is difficult to change. Furthermore, it is very difficult to change a hydrophilic region to a hydrophobic region (or a hydrophobic region to a hydrophilic region) in real time, that is, at any time. Therefore, it is not possible to dynamically change the cell culture environment while appropriately observing the cell culture conditions.

From the above, it is desired to provide a cell culture apparatus capable of dynamically changing the cell culture environment by devising the configuration.

(Embodiment 1)
[Heating device]
<Structure of Heating Apparatus of Embodiment 1>
A heating apparatus according to a first embodiment (hereinafter referred to as embodiment 1) will be described below with reference to FIGS. 1 to 5. FIG. FIG. 1 is a schematic perspective view showing a heating device according to Embodiment 1. FIG. FIG. 2 is a transparent perspective schematic diagram showing the heating device according to Embodiment 1. FIG. FIG. 3 is a transparent perspective schematic diagram showing a main part of the heating device according to Embodiment 1. FIG. 4 and 5 are cross-sectional views of main parts showing the heating device according to the first embodiment. 4 is a cross-sectional view of the essential part in the yz direction shown in FIG. 3, and FIG. 5 is a cross-sectional view of the essential part in the xz direction shown in FIG.

As shown in FIG. 1, a heating apparatus 10 according to Embodiment 1 includes a substrate 11, a heating portion 12 including a plurality of first magnetic portions 13 arranged on the substrate 11, and a magnetic field generator for generating an alternating magnetic field. (not shown). The plurality of first magnetic body parts 13 has a patterned array structure on the substrate 11 . Although details will be described later, the first magnetic body portion 13 generates heat due to magnetic hysteresis loss caused by an alternating magnetic field (external magnetic field) generated by the magnetic field generating portion. Therefore, each of the plurality of first magnetic body portions 13 acts as an independent heat generator. This point is common to heating devices of other embodiments and modified examples described later. Wirings, interlayer insulating films, contact plugs, pads, etc. other than the members described below are omitted from the drawings.

A configuration specific to the heating device 10 of Embodiment 1 will be described in detail below. As shown in FIGS. 2 to 5, the heating device 10 of Embodiment 1 has a substrate 11, a heat generating section 12, and a magnetic field generating section 61. FIG. The heat generating portion 12 of Embodiment 1 includes a plurality of first magnetic layers (first magnetic portions) 13 . The multiple first magnetic layers 13 have a patterned arrangement structure. Specifically, the plurality of first magnetic layers 13 are arranged in an array. The first magnetic layer 13 is formed in a rectangular shape in plan view. As shown in FIG. 2, in the heating device 10 of Embodiment 1, the external magnetic field MFex generated by the magnetic field generator 61 causes magnetic hysteresis loss in the first magnetic layer 13, thereby generating heat.

Although the material constituting the first magnetic layer 13 is not particularly limited, at least one element of iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn) or chromium (Cr) is used. preferably included. Also, this material may contain a rare earth element such as samarium (Sm) or neodymium (Nd). This material may also be an alloy of iron or nickel, or an oxide such as ferrite. The Curie temperature of this material is preferably above room temperature. This is because the magnetic material loses its ferromagnetic characteristics at a temperature higher than the Curie temperature, making it difficult to heat to a temperature higher than the Curie temperature. However, by setting the Curie temperature as the upper limit temperature for heating, it is also possible to prevent the first magnetic layer 13, which is a heating element, from being heated to a temperature higher than the set temperature.

Also, the first magnetic layer 13 may be an aggregate (composite) of nanoparticles. In this case, it is possible to set the blocking temperature as the upper limit temperature of heating by utilizing the superparamagnetic behavior due to thermal fluctuation below the blocking temperature of the nanoparticles.

Further, as shown in FIGS. 2 to 5, the substrate 11 of Embodiment 1 includes a plurality of second magnetic layers (second magnetic portions) 14, a plurality of heat insulation layers 15, a control electrode 16, and an insulating layer 17 .

The second magnetic layers 14 are provided in the same number as the first magnetic layers 13, and are configured so that one second magnetic layer 14 magnetically interacts with one first magnetic layer 13. ing. Therefore, the plurality of second magnetic layers 14 also have a patterned arrangement structure. Also, the coercive force of the second magnetic layer 14 is greater than the coercive force of the first magnetic layer 13 .

The material constituting the second magnetic layer 14 is not particularly limited, but similar to the first magnetic layer 13, iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn) or It preferably contains at least one element of chromium (Cr). Also, this material may contain a rare earth element such as samarium (Sm) or neodymium (Nd). This material may also be an alloy of iron or nickel, or an oxide such as ferrite.

Also, the heat insulating layer 15 is arranged on the second magnetic layer 14 . Therefore, the heat insulating layer 15 is arranged between the first magnetic layer 13 and the second magnetic layer 14 . The second magnetic layer 14 and the heat insulating layer 15 are each formed in a rectangular shape in plan view, and overlap the first magnetic layer 13 in plan view. Also, the heat insulating layer 15 is made of an insulator having a lower thermal conductivity than both the thermal conductivity of the first magnetic layer 13 and the thermal conductivity of the second magnetic layer 14 . Further, the insulating layer 17 is formed so as to fill a portion of the substrate 11 other than the second magnetic layer 14 , the heat insulating layer 15 and the control electrode 16 .

Also, the control electrode 16 is for modulating the magnetization state of the second magnetic layer 14 . The control electrode 16 of Embodiment 1 is composed of a plurality of rod-shaped upper electrodes (first electrodes) 16a and a plurality of lower electrodes (second electrodes) 16b. In Embodiment 1, the upper surface of the upper electrode 16a is in contact with the lower surface of the second magnetic layer 14. As shown in FIG. An insulating layer 17 is arranged between the upper electrode 16a and the lower electrode 16b, and the upper electrode 16a and the lower electrode 16b are not in contact with each other.

Further, the upper electrode 16a and the lower electrode 16b of Embodiment 1 intersect each other in plan view, and more preferably intersect each other at right angles. Then, in a plan view, the heat generating portion 12 is arranged so as to overlap the intersection of the upper electrode 16a and the lower electrode 16b. More specifically, when there are m upper electrodes 16a and n lower electrodes 16b, the heat generating portions 12 are arranged in a two-dimensional matrix of m×n.

Note that if the area of the intersection of the upper electrode 16a and the lower electrode 16b is too large in plan view than the area of the second magnetic layer 14, the magnetization reversal of the plurality of second magnetic layers 14 will occur simultaneously. there is a possibility. Similarly, if the area of the intersection of the upper electrode 16a and the lower electrode 16b is too smaller than the area of the second magnetic layer 14 in plan view, the magnetization reversal of the second magnetic layer 14 may not occur. have a nature. Therefore, it is preferable that the area of the crossing portion of the upper electrode 16a and the lower electrode 16b is the same as the area of the second magnetic layer 14 in plan view. Therefore, it is preferable that the width of the upper electrode 16a, the width of the lower electrode 16b, and the length of one side of the second magnetic layer 14 are all equal in plan view.

Although the details will be described later, the upper electrode 16a of the first embodiment is for causing spin-orbit torque-induced magnetization reversal in the second magnetic layer 14 . Therefore, the upper electrode 16a of the first embodiment is made of a non-magnetic metal having electrons in the f-orbital, which has a larger spin-orbital interaction than the other orbitals (s-orbital, p-orbital, d-orbital). Non-magnetic metals having electrons in f orbitals include, for example, hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold ( Au) or bismuth (Bi), preferably platinum or tantalum. On the other hand, the material of the lower electrode 16b of Embodiment 1 is not particularly limited, and is made of, for example, copper (Cu) or aluminum (Al).

Although the first magnetic layer (first magnetic portion) 13 in Embodiment 1 is arranged on the substrate 11, for example, the first magnetic layer 13 is placed on the insulating layer 17. It may be covered and the whole may be configured as one substrate.

Moreover, although the case where the heat insulating layer 15 of the first embodiment is provided in the same number as the first magnetic layer 13 and the second magnetic layer 14 has been described as an example, the present invention is not limited to this. It may be integrally formed as one heat insulating layer 15 so as to cover all the two magnetic layers 14 .

Moreover, although the case where the upper surface of the upper electrode 16a in the first embodiment is in contact with the lower surface of the second magnetic layer 14 has been described as an example, A conductor layer made of a non-magnetic heavy metal may be arranged.

<Operating Principle of Heating Apparatus of Embodiment 1>
6 to 9, the heat generating mechanism of the heat generating portion 12, which is one of the operating principles of the heating device 10 according to the first embodiment, will be described below. FIG. 6 shows the magnetic flux density penetrating through the first magnetic layer 13 when an external magnetic field is applied to the first magnetic layer 13 and the second magnetic layer 14 in the heating device 10 of the first embodiment. It is a graph representing. FIG. 7 shows the heating device 10 according to the first embodiment, in which the second magnetic layer 14 has a magnetization vector directed upward in the direction perpendicular to the plane, the external magnetic field is applied to the first magnetic layer 13 and the second magnetic layer 14 . 4 is a graph showing magnetic flux density penetrating through a magnetic body when a magnetic field is applied. FIG. 8 shows the heating device 10 of the first embodiment, in which the second magnetic layer 14 has a magnetization vector directed downward in the direction perpendicular to the plane. 4 is a graph showing magnetic flux density penetrating through a magnetic body when a magnetic field is applied. FIG. 9 is a cross-sectional view of a main part of heating device 10 according to Embodiment 1. As shown in FIG.

In the graphs of FIGS. 6 to 8, the horizontal axis represents the intensity of the external magnetic field, and the vertical axis represents the magnetic flux density penetrating through the first magnetic layer 13 and the second magnetic layer 14 . As described above, the coercive force Hc1 of the first magnetic layer 13 is smaller than the coercive force Hc2 of the second magnetic layer 14 .

Here, as shown in FIG. 6, an external magnetic field (alternating magnetic field) MFex (minimum value: -Hex, maximum value: +Hex) whose magnitude |Hex| is larger than the coercive force Hc1 of the first magnetic layer 13. Define When this external magnetic field MFex is applied to the first magnetic layer 13, the magnetization of the first magnetic layer 13 is reversed. At this time, a circular path (hysteresis loop) of a→b→c→d→e→f→a is drawn. Therefore, when the magnetization of the first magnetic layer 13 is reversed by an alternating magnetic field, energy proportional to the area of the portion surrounded by the hysteresis loop is released as heat (hysteresis loss). Thus, the first magnetic layer 13 included in the heating device 10 of Embodiment 1 functions as a heating element due to the presence of an external magnetic field.

Here, as shown in FIG. 7, an alternating magnetic field is applied to the first magnetic layer 13 in a state in which the second magnetic layer 14 has a magnetization vector directed upward in the perpendicular direction (referred to as a second magnetic layer 14a). is applied, the first magnetic layer 13 is affected not only by the AC magnetic field but also by the magnetic field produced by the second magnetic layer 14a. As a result, the hysteresis loop of the first magnetic layer 13 shifts from the origin O by -Δx. Similarly, as shown in FIG. 8, in a state in which the second magnetic layer 14 has a magnetization vector directed downward in the perpendicular direction (referred to as a second magnetic layer 14b), an alternating magnetic field is applied to the first magnetic layer 13. is applied, the hysteresis loop of the first magnetic layer 13 shifts from the origin O by +Δx due to the influence of the magnetic field produced by the second magnetic layer 14b.

Therefore, as shown in FIGS. 7 and 8, the external magnetic field MFex1 (minimum value: −Hex+Δx, maximum value: Hex+Δx) is obtained by shifting the external magnetic field MFex by +Δx from the origin O while keeping the magnetic field magnitude |Hex| Define As shown in FIG. 7, when the heat-generating portion 12 includes the second magnetic layer 14a having a magnetization vector directed upward in the perpendicular direction, when an external magnetic field MFex1 is applied to the first magnetic layer 13, the first magnetic layer The layer 13 does not undergo magnetization reversal and does not generate heat. On the other hand, as shown in FIG. 8, when the heat generating portion 12 includes the second magnetic layer 14b having a magnetization vector directed downward in the perpendicular direction, when the external magnetic field MFex1 is applied to the first magnetic layer 13, the 1 Magnetic layer 13 reverses its magnetization and generates heat. As a result, as shown in FIG. 9, heat is emitted from the first magnetic layer 13 (H1 in FIG. 9). Thus, in the heating device 10 of Embodiment 1, whether or not the first magnetic layer 13 generates heat changes depending on the magnetization state of the second magnetic layer 14 .

In the heating device 10 of Embodiment 1, the coercive force Hc2 of the second magnetic layer 14 is made larger than the magnitude of the external magnetic field MFex1 (maximum value: +Hex+Δx). The magnetization of the second magnetic layer 14 is not reversed while the external magnetic field MFex1 is being applied. Therefore, the magnetization state of the second magnetic layer 14 is maintained during the heating operation of the heating device 10 .

Next, a method for changing the magnetization state of the second magnetic layer 14 in the heating device 10 of Embodiment 1 will be described with reference to FIGS. 3 to 5. FIG.

As shown in FIGS. 3 to 5, in the heating device 10 of the first embodiment, a plurality of upper electrodes 16a and a plurality of lower electrodes 16b are provided in the substrate 11, and the intersections of the upper electrodes 16a and the lower electrodes 16b are provided. A heat-generating portion 12 (second magnetic layer 14) is arranged in the portion. The upper surface of the upper electrode 16a is in contact with the lower surface of the second magnetic layer 14, and the upper electrode 16a is configured to cause spin-orbit torque-induced magnetization reversal with respect to the second magnetic layer 14. ing.

Here, the spin-orbit torque is, for example, a structure in which a non-magnetic heavy metal (upper electrode 16a) and a ferromagnetic material (second magnetic layer 14) are laminated (a structure in which inversion symmetry is broken with respect to the lamination direction). In , when a current (I1 in Fig. 3) is introduced in the in-plane direction of a non-magnetic heavy metal, spins polarized in the in-plane direction accumulate in the ferromagnetic material, and the angular momentum is transferred to the magnetization, resulting in magnetization It is one of the magnetic interactions that torque acts on Changing the polarity of the current reverses the direction of the torque, thus reversing the magnetization in the opposite direction.

When the magnetization vector of the second magnetic layer 14 is oriented perpendicular to the plane, the spin direction and the magnetization direction are orthogonal to each other. Therefore, the magnetization reversal direction cannot be determined by the spin alone accumulated by the spin-orbit torque. do not have. Therefore, it is necessary to apply a constant magnetic field from the outside in order to break the symmetry of the torque. In other words, the magnetization of the plurality of second magnetic layers 14 existing on the upper electrode 16a through which the current I1 flows is not reversed at the same time.

Here, in the heating device 10 of Embodiment 1, since the lower electrode 16b is arranged below the upper electrode 16a, a magnetic field is generated around the lower electrode 16b by applying the current I2 to the lower electrode 16b. (Magnetic field MF1 shown in FIGS. 3 and 5). As a result, the second magnetic layer 14 located at the intersection of the upper electrode 16a through which the current I1 flows and the lower electrode 16b through which the current I2 flows is magnetized by the spin-orbit torque generated by the upper electrode 16a and the magnetic field generated by the lower electrode 16b. be done.

It is important to make the magnitude of the magnetic field generated by applying current to the lower electrode 16b smaller than the coercive force Hc2 of the second magnetic layer . This is because, if the magnitude of the magnetic field generated by applying a current to the lower electrode 16b is greater than the coercive force Hc2 of the second magnetic layer 14, the plurality of second magnetic layers existing on one lower electrode 16b 14 are reversed in magnetization at the same time.

Further, when the magnetization vector of the second magnetic layer 14 is oriented along the in-plane direction, the magnetization vector of the second magnetic layer 14 can be reversed only by the spin-orbit torque. Therefore, it is important to reduce the current flowing through the upper electrode 16a so that the magnetization of the plurality of second magnetic layers 14 present on the upper electrode 16a is not reversed at the same time.

<Characteristics and Effects of the Heating Device of Embodiment 1>
As shown in FIGS. 1 to 5, one of the features of the heating device 10 of Embodiment 1 is that a heat generating portion 12 made up of a plurality of first magnetic layers (first magnetic portions) 13 and an alternating magnetic field are generated. and a magnetic field generator 61 for generating the magnetic field. The plurality of first magnetic layers 13 form a patterned arrangement structure.

The heating device 10 of Embodiment 1 can be locally heated by having such a configuration. The reason for this will be explained below.

As explained in the items to be examined, in a heating device having a heat generating part made up of multiple conductors, it is necessary to connect wires and electrodes, which are conductors, in order to pass current through the conductors, which are heat generators. From this point of view, not only is it difficult to increase the heating efficiency of the heating element, but it is also difficult to control the temperature of the heating element.

On the other hand, the heating device 10 of Embodiment 1 has a heat generating portion 12 composed of a plurality of first magnetic layers 13, and generates heat by hysteresis loss due to an alternating magnetic field. As described above, in the heating device 10 of Embodiment 1, since the first magnetic layer 13, which is a heating element, is not directly connected to the wiring or the like to generate heat, the heating element is electrically conductive. Compared to a heating device using a body, the heating efficiency of the heating element can be increased, and the temperature of the heating element can be easily controlled.

In particular, as shown in FIG. 9, in the heating device 10 of Embodiment 1, the heat insulating layer 15 is arranged between the first magnetic layer 13 of the heat generating portion 12 and the second magnetic layer 14 of the substrate 11. ing. By configuring in this way, of the heat generated in the first magnetic layer 13, the component (H2 in FIG. 9) dissipating to the second magnetic layer 14 in the substrate 11, the control electrode 16, etc. can be reduced. It is possible to further increase the heating efficiency of the heating element.

Moreover, the heating device 10 of Embodiment 1 includes a second magnetic layer 14 that magnetically interacts with the first magnetic layer 13, which is a heating element. Thus, in the heating device 10 of Embodiment 1, it is possible to select whether or not to heat the first magnetic layer 13 by the external magnetic field depending on the magnetization state of the second magnetic layer 14 .

Here, in order to modulate the magnetization state of the second magnetic layer 14, for example, when an external magnetic field larger than the coercive force Hc2 of the second magnetic layer 14 is simply applied to the second magnetic layer 14, the substrate 11 The magnetization states of all the second magnetic layers 14 arranged in the order change. In this respect, the heating device 10 of Embodiment 1 has the control electrode 16 that modulates the magnetization state of the second magnetic layer 14 . The control electrode 16 includes a plurality of upper electrodes 16a and a plurality of lower electrodes 16b. In a plan view, the first magnetic layer 13 and the second magnetic layer 13 overlap the intersections of the upper electrodes 16a and the lower electrodes 16b. A magnetic layer 14 is arranged. Thus, in the heating device 10 of Embodiment 1, the second magnetic layer 14 located at the intersection of the upper electrode 16a through which current flows and the lower electrode 16b through which current flows is the spin-orbit torque generated by the upper electrode 16a. and the magnetic field generated by the lower electrode 16b causes magnetization reversal. As a result, by selecting the upper electrode 16a and the lower electrode 16b through which current flows from the plurality of upper electrodes 16a and the plurality of lower electrodes 16b, the magnetization of the second magnetic layer 14 at any location arranged on the substrate 11 can be controlled. Can change state.

As described above, in the heating device 10 of Embodiment 1, by modulating the magnetization state of the second magnetic layers 14 at arbitrary locations arranged on the substrate 11, among the plurality of first magnetic layers 13, The first magnetic layer 13 can be selected to be heated by an alternating magnetic field. As a result, in the heating device 10 of Embodiment 1, only an arbitrary heat generating portion 12 (first magnetic layer 13) can be heated by an alternating magnetic field.

Furthermore, in the heating device 10 of Embodiment 1, since the coercive force of the second magnetic layer 14 is made larger than the magnitude of the alternating magnetic field, when the alternating magnetic field is applied to the first magnetic layer 13, , the magnetization of the second magnetic layer 14 is not reversed. Therefore, the magnetization state of the second magnetic layer 14 can be maintained during the heating operation of the heating device 10 of the first embodiment.

[Cell culture device]
<Structure of Cell Culture Apparatus of Embodiment 1>
A cell culture apparatus, which is an application example of the heating apparatus 10 of Embodiment 1, will be described below with reference to FIGS. 10 to 15. FIG. 10 is a schematic perspective view of the cell culture apparatus according to Embodiment 1. FIG. 11 is a schematic cross-sectional view of the cell culture device according to Embodiment 1. FIG. 12 is a cross-sectional view of a main part of the cell culture device according to Embodiment 1. FIG.

As shown in FIGS. 10 and 11, the cell culture apparatus 20 of Embodiment 1 includes a heating device 10, a container 21 arranged on the heating device 10, a culture solution 22 arranged in the container 21, It is composed of cells 23 placed in a culture solution 22 . Since the configuration of the heating device 10 included in the cell culture device 20 of Embodiment 1 is the same as the configuration of the heating device 10 of Embodiment 1 described above, repeated description will be omitted. The container 21 is arranged so as to cover the plurality of heat generating portions 12 and not interfere with the control electrodes 16 of the substrate 11 . Note that the exothermic part 12 is configured to be in direct contact with the culture medium 22 and the cells 23 in the container 21 .

As shown in FIG. 12, the heating unit 12 of the cell culture device 20 of Embodiment 1 has basically the same configuration as the heating unit 12 of the heating device 10 of Embodiment 1 described above. However, the upper surface of the first magnetic layer 13 is covered with a protective film 18 that does not react with the culture solution 22 . A temperature responsive portion 19 is formed on the upper surface of the protective film 18 . The temperature responsive portion 19 is made of a temperature responsive material. Therefore, the heat generating portion 12 of the cell culture device 20 of Embodiment 1 includes the first magnetic layer 13, the protective film 18 covering the upper surface of the first magnetic layer 13, and the protective film 18 formed on the upper surface of the protective film 18. and a temperature response unit 19 .

The protective film 18 is made of a chemically resistant material so as to protect the first magnetic layer 13 from the culture solution 22 . Therefore, the protective film 18 is preferably made of gold or platinum. Also, as the protective film 18, a self-assembled monomolecular film formed by Au--S bonding of molecules having a thiol group (--SH) on the surface of gold can be employed. In this case, the self-assembled monolayer can be reacted with a temperature-responsive polymer, which will be described later, and the protective film 18 plays a role of increasing the adhesiveness between the first magnetic layer 13 and the temperature-responsive portion 19. .

Further, as a temperature-responsive material forming the temperature-responsive section 19, for example, a temperature-responsive polymer whose solubility in water changes dramatically with temperature changes can be used. Temperature-responsive polymers, for example, are soluble in water at low temperatures, but when the temperature is raised to the lower critical solution temperature (LCST), they become insoluble, become cloudy and precipitate, and cool. There is a polymer that exhibits a reversible behavior of re-dissolving. In addition, the temperature-responsive polymer, for example, is soluble in water at high temperatures, but becomes insoluble and becomes cloudy and precipitates below the upper critical solution temperature (HCST). There are polymers that show Examples of temperature-responsive polymers exhibiting LCST include poly(N-isopropylacrylamide), poly(N-alkylacrylamide), and poly(N-vinylalkylether). In particular, poly(N-isopropylacrylamide) has an LCST of 32° C. and exhibits property changes near room temperature, and is therefore preferable as a temperature-responsive material.

In poly(N-isopropylacrylamide), at a temperature below the LCST, the polymer chain is hydrated and stretched due to the strong interaction between the amide bond site and water, and assumes a random coil conformation (hydrophilicity). ). On the other hand, at a temperature higher than the LCST, poly(N-isopropylacrylamide) undergoes dehydration and forms a globular state in which polymer chains aggregate due to hydrophobic interaction (hydrophobicity).

Further, the magnetic field generator (not shown) included in the cell culture apparatus 20 of Embodiment 1 has basically the same configuration as the magnetic field generator 61 included in the heating apparatus of Embodiment 1. It is desirable that the alternating magnetic field generated by the magnetic field generator has a magnitude that does not affect the cells 23 .

<Characteristics and effects of the cell culture device of Embodiment 1>
The cell culture apparatus 20 of Embodiment 1 can dynamically change the cell culture environment by having the configuration described above. The reason for this will be described below with reference to FIGS. 13 to 15. FIG. FIG. 13 is a schematic cross-sectional view of main parts showing the operation of the cell culture apparatus according to Embodiment 1. FIG. 14 and 15 are schematic plan views showing cells cultured in the cell culture apparatus according to Embodiment 1. FIG.

FIG. 13 is an enlarged cross-sectional view of the heat-generating part 12 included in the cell culture device 20 of Embodiment 1, and is a cross-sectional view corresponding to FIG. 4 described above. FIG. 13 shows temporal changes in the cell culture device 20 from time t1 to t3.

As shown in FIG. 13, heat generating portions 12a, 12b, 12c, and 12d among the plurality of heat generating portions 12 are arranged on the substrate 11. FIG. The temperature responsive portion 19 is made of a temperature responsive polymer having an LCST (32° C.) such as poly(N-isopropylacrylamide). In the initial state, the temperatures of the heat generating portions 12a to 12d are assumed to be lower than the LCST.

First, in the state of time t1, the second magnetic layers 14 included in the heat generating portions 12a to 12c are in a state (second magnetic layer 14a) having a magnetization vector directed upward in the perpendicular direction, and included in the heat generating portion 12d. It is assumed that the second magnetic layer 14 has a magnetization vector directed downward in the perpendicular direction (second magnetic layer 14b). Therefore, when the external magnetic field MFex1 shown in FIGS. 7 and 8 is applied to the first magnetic layers 13 of the heat generating portions 12a to 12d in this state, the magnetization of the first magnetic layers 13 of the heat generating portions 12a to 12c is reversed. However, the magnetization of the first magnetic layer 13 of the heat generating portion 12d is reversed and heat is generated. As a result, since the temperature responsive portion 19 of the heat generating portions 12a to 12c is at a temperature lower than the LCST, it assumes an elongated random coil-like conformation and becomes hydrophilic (the temperature responsive portion 19 in this state becomes hydrophilic). 19a). On the other hand, the temperature responsive portion 19 of the exothermic portion 12d reaches a temperature higher than the LCST, becomes a globule state in which polymer chains aggregate, and becomes hydrophobic (the temperature responsive portion 19 in this state is referred to as a temperature responsive portion 19b).

Next, in the process from time t1 to time t2, a current is passed through the upper electrode 16a and the lower electrode 16b of the heat generating portion 12c to reverse the magnetization of the second magnetic layer 14 included in the heat generating portion 12c (the second magnetic substance Layer 14a→second magnetic layer 14b). Also, in the process from time t1 to time t2, a current is passed through the upper electrode 16a and the lower electrode 16b of the heat generating portion 12d to reverse the magnetization of the second magnetic layer 14 included in the heat generating portion 12d (second magnetic layer 14b→second magnetic layer 14a).

Next, at time t2, the heat generating portions 12a, 12b, and 12d are in the state of the second magnetic layer 14a, and the heat generating portion 12c is in the state of the second magnetic layer 14b. When the voltage is applied to the first magnetic layer 13 of 12d, the first magnetic layers 13 of the heat generating portions 12a, 12b, and 12d do not reverse their magnetization and generate heat, while the first magnetic layer 13 of the heat generating portion 12c reverses their magnetization and generates heat. do. As a result, the temperature responsive portions 19 of the heat generating portions 12a, 12b, and 12d become the hydrophilic temperature responsive portions 19a, and the temperature responsive portion 19 of the heat generating portion 12c becomes the hydrophobic temperature responsive portion 19b.

Next, in the process from time t2 to time t3, a current is passed through the upper electrode 16a and the lower electrode 16b of the heat generating portion 12b to reverse the magnetization of the second magnetic layer 14 included in the heat generating portion 12b (the second magnetic substance Layer 14a→second magnetic layer 14b). In the process from time t2 to time t3, a current is passed through the upper electrode 16a and the lower electrode 16b of the heat generating portion 12c to reverse the magnetization of the second magnetic layer 14 included in the heat generating portion 12c (second magnetic layer 14b→second magnetic layer 14a).

Next, at time t3, the heat generating portions 12a, 12c, and 12d are in the state of the second magnetic layer 14a, and the heat generating portion 12b is in the state of the second magnetic layer 14b. When the voltage is applied to the first magnetic layer 13 of 12d, the magnetization of the first magnetic layers 13 of the heat generating portions 12a, 12c, and 12d is not reversed and heat is not generated, while the magnetization of the first magnetic layer 13 of the heat generating portion 12b is reversed and heat is generated. do. As a result, the temperature responsive portions 19 of the heat generating portions 12a, 12c, and 12d become hydrophilic temperature responsive portions 19a, and the temperature responsive portions 19 of the heat generating portion 12b become hydrophobic temperature responsive portions 19b.

As described above, in the cell culture apparatus 20 of Embodiment 1, the hydrophilicity/hydrophobicity of the temperature responsive portion 19 provided in each heat generating portion 12 is changed by heating the heat generating portion 12 at an arbitrary position for an arbitrary time. It can be changed dynamically.

A cell patterning method in the cell culture apparatus 20 of Embodiment 1 will be described below. In general, cells are more likely to adhere to hydrophobic surfaces and less likely to adhere to hydrophilic surfaces. As a result, for example, in the cell culture apparatus 20 of Embodiment 1, when any of the heat-generating portions 12 is heated, the temperature-responsive portions 19 provided in all the heat-generating portions 12 become the hydrophobic temperature-responsive portions 19b. Cells 23 can adhere to the portion 19b to form a pattern as shown in FIG. On the other hand, for example, in the cell culture apparatus 20 of Embodiment 1, if only a part of the heat-generating portions 12 is heated, only the temperature-responsive portions 19 provided in the heated heat-generating portions 12 become the hydrophobic temperature-responsive portions 19b and are heated. The temperature responsive portion 19 provided in the heat generating portion 12 that is not exposed remains as the hydrophilic temperature responsive portion 19a. Therefore, the cells 23 adhere only to some of the temperature responsive portions 19b, and the cells 23 do not adhere to the other temperature responsive portions 19a. As a result, a pattern as shown in FIG. 15 can be formed.

Thus, in the cell culture apparatus 20 of Embodiment 1, cell patterning is possible, and furthermore, the adhesion pattern of the cells 23 can be changed by changing the position and the number of the heating units 12 to be heated. be able to. As described above, in the cell culture device 20 of Embodiment 1, the cell patterning can be dynamically changed.

Further, as shown in FIG. 9 described above, in the cell culture device 20 of Embodiment 1, the first magnetic layer (first magnetic portion) 13 of the heating portion 12 and the second magnetic layer 14 of the substrate 11 A heat insulating layer 15 is arranged between the Therefore, of the heat generated in the first magnetic layer 13, the component (H2 in FIG. 9) dissipating to the second magnetic layer 14, the control electrode 16, etc. in the substrate 11 can be reduced, and the protective film Heat (H1 in FIG. 9) can be efficiently transmitted to the temperature responsive portion 19 made of a temperature responsive material formed on 18 .

As shown in FIGS. 9 and 10, in the cell culture apparatus 20 of Embodiment 1, the case where the culture solution 22 is left still in the container 21 has been described as an example, but it is not limited to this. For example, although not shown, a tube, a pump, or the like may be connected to the container 21 so that the culture solution 22 can be perfused.

In addition, the case where the heating device 10 of Embodiment 1 is used in the cell culture device 20 of Embodiment 1 has been described as an example, but the present invention is not limited to this. 2 heating devices 50 may be used.

(Modification 1)
A heating device according to a first modification (hereinafter referred to as modification 1) of Embodiment 1 will be described below. Since the configuration of the heating device of Modification 1 is basically the same as the configuration of the heating device 10 of Embodiment 1 shown in FIGS. 2 to 5, illustration and repeated description will be omitted.

However, in the heating device of Modification 1, the upper surface of the upper electrode (first electrode) 16a need not be in contact with the lower surface of the second magnetic layer 14, and the material of the upper electrode 16a is not limited. This is the difference between the heating device 10 of Embodiment 1 and the heating device of Modification 1. FIG.

Here, a method for changing the direction of the magnetization vector of the second magnetic layer 14 in the heating device of Modification 1 will be described. In the heating device of Modification 1, as in the heating device 10 of Embodiment 1, current is passed through both the upper electrode 16a and the lower electrode 16b. However, both the magnitude of the magnetic field generated by applying a current only to the upper electrode 16a and the magnitude of the magnetic field generated by applying a current only to the lower electrode 16b affect the coercive force of the second magnetic layer 14. Hc2, and the magnitude of the magnetic field generated at the intersection of the upper electrode 16a through which the current flows and the lower electrode 16b through which the current flows is made larger than the coercive force Hc2 of the second magnetic layer 14. to By doing so, it is possible to reverse the magnetization of only the second magnetic layer 14 located at the intersection of the upper electrode 16a through which the current is passed and the lower electrode 16b through which the current is passed.

As described above, in the heating device of Modification 1, as in the heating device 10 of Embodiment 1, the magnetic interaction with the upper electrode 16a and the magnetic interaction with the lower electrode 16b are superimposed for the first time. By configuring the magnetization of the two magnetic layers 14 to be reversed, the magnetization state of the second magnetic layers 14 arranged on the substrate 11 at arbitrary locations can be changed.

Unlike the heating device 10 of Embodiment 1, the heating device of Modification 1 does not use magnetic interaction due to spin-orbit torque. It is more advantageous than the first embodiment in that the layout of the substrate 11 is highly flexible and the material of the upper electrode 16a is not limited.

On the other hand, in the heating device 10 of Embodiment 1, the magnetic interaction due to the spin-orbit torque is used for the magnetization reversal of the second magnetic layer 14, so that the current flowing through the upper electrode 16a and the lower electrode 16b can be reduced. This is more advantageous than Modification 1 in that respect.

(Modification 2)
A heating device according to a second modification (hereinafter referred to as modification 2) of the first embodiment will be described below. 16 is a cross-sectional view of a main part of a heating device according to Modification 2. FIG. FIG. 16 is a cross-sectional view of the main part corresponding to FIG. 5, and is a cross-sectional view of the main part in the xz direction.

Since the configuration of the heating device 30 of Modification 2 is basically the same as the configuration of the heating device 10 of Embodiment 1 shown in FIGS. 2 to 5, repeated description will be omitted.

However, as shown in FIG. 16, in the heating device 30 of Modification 2, the control electrode 16 is composed of an upper electrode (first electrode) 16a and a lower electrode (second electrode) 16c. The center Oc of the two magnetic layers (second magnetic portion) 14 does not coincide with the center Xc of the intersection between the upper electrode 16a and the lower electrode 16c. That is, the lower electrode 16c is shifted from the center Oc of the second magnetic layer 14 by the distance Xc in the x direction in FIG. This is the point of difference from the heating device 10 .

As shown in FIG. 5, in the heating device 10 of Embodiment 1, the center of the lower electrode 16b in the width direction and the center of the second magnetic layer 14 coincide in the x direction of FIG. Therefore, of the magnetic field MF1 generated by the lower electrode 16b, the component parallel to the x-axis mainly acts on the second magnetic layer .

On the other hand, as shown in FIG. 16, in the heating device 30 of Modification 2, the center Xc in the width direction of the lower electrode 16c and the center Oc of the second magnetic layer 14 are shifted in the x direction in FIG. Therefore, of the magnetic field MF2 generated by the lower electrode 16c, not only the component parallel to the x-axis but also the component parallel to the z-axis acts on the second magnetic layer 14 as a main component.

As described above, in the heating device 30 of the modification 2, when the magnetization of the second magnetic layer 14 is reversed as described above, the magnetization state such as the direction of the magnetization vector of the second magnetic layer 14 is given a degree of freedom. This is more advantageous than the heating device 10 of the first embodiment in that it is possible to On the other hand, as shown in FIG. 5, in the heating device 10 of Embodiment 1, the center of the lower electrode 16b in the width direction and the center of the second magnetic layer 14 are aligned in the x direction of FIG. This is advantageous over the heating device 10 of Modified Example 2 in that the design and manufacture of the device are easy.

(Modification 3)
A heating device according to a third modification (hereinafter referred to as modification 3) of Embodiment 1 will be described below with reference to FIGS. 17 and 18. FIG. FIG. 17 is a transparent perspective schematic diagram showing a main part of a heating device according to Modification 3. FIG. 18 is a cross-sectional view of a main part of a heating device according to Modification 3. FIG. FIG. 17 is a see-through perspective schematic diagram corresponding to FIG. FIG. 18 is a cross-sectional view of the essential parts in the yz direction shown in FIG. 17, and is a cross-sectional view of the essential parts corresponding to FIG.

Since the configuration of the heating device 40 of Modification 3 is basically the same as the configuration of the heating device 10 of Embodiment 1 shown in FIGS. 2 to 5, repeated description will be omitted.

However, as shown in FIG. 16, in the heating device 30 of Modification 2, the control electrode 16 includes an upper electrode (first electrode) 16a, an upper electrode (third electrode) 16d, and a lower electrode (second electrode). 16b. The upper electrode 16a and the upper electrode 16d are parallel in plan view, and the upper electrodes 16a and 16d and the lower electrode 16b intersect in plan view, preferably perpendicular to each other.

Further, in the heating device 30 of Modified Example 3, an insulating layer 17a is formed on the upper surface of the second magnetic layer 14 . The second magnetic layer 14 and the insulating layer 17a are sandwiched between the upper electrode 16a and the upper electrode 16d. As a result, in the substrate 11, a layered structure including the upper electrode 16d, the second magnetic layer 14, the insulating layer 17a and the upper electrode 16a is formed along the thickness direction.

The second magnetic layer 14 of Modification 3 is made of a material having a strong magnetic exchange interaction, that is, a ferromagnetic material, preferably a metal such as iron or cobalt or an alloy thereof, more preferably CoFeB. The insulating layer 17a is made of a non-magnetic insulator, preferably a non-magnetic metal oxide, more preferably magnesium oxide (MgO). On the other hand, the materials of the upper electrodes 16a and 16d and the lower electrode 16c are not particularly limited, and are made of copper or aluminum, for example. The above points are the differences between the heating device 40 of the third modification and the heating device 10 of the first embodiment.

Here, a method for changing the direction of the magnetization vector of the second magnetic layer 14 in the heating device 40 of Modification 3 will be described. In the heating device 40 of Modification 3, when a voltage is applied between the upper electrode 16a and the upper electrode 16d, the voltage is applied to the interface between the second magnetic layer 14 and the insulating layer 17a. As a result, the magnetic anisotropy of the interface between the second magnetic layer 14 and the insulating layer 17a is changed, and the coercive force Hc2 of the second magnetic layer 14 can be changed.

As described above, the magnitude of the magnetic field generated by applying a current only to the lower electrode 16b is smaller than the coercive force Hc2 of the second magnetic layer 14. Therefore, when a current is applied only to the lower electrode 16b, The magnetization of the second magnetic layer 14 is not reversed. However, by applying a voltage between the upper electrode 16a and the upper electrode 16d to reduce the coercive force Hc2 of the second magnetic layer 14, the magnetic field generated by applying a current to the lower electrode 16b causes the second The magnetization of the magnetic layer 14 can be reversed.

That is, the magnetization of only the second magnetic layer 14 located at the intersections of the upper electrodes 16a and 16d to which the voltage is applied and the lower electrode 16b to which the current is applied can be reversed.

In particular, in the heating device 40 of Modification 3, the insulating layer 17a made of MgO is laminated on the second magnetic layer 14 made of CoFeB and having a thickness of about 1 to 2 nm, preferably 1.3 nm. The magnetic layer 14 has magnetic anisotropy in the perpendicular direction (thickness direction of the second magnetic layer 14). Therefore, by applying a voltage between the upper electrodes 16a and 16d formed along the thickness direction of the second magnetic layer 14, the magnetization state of the second magnetic layer 14 can be modulated efficiently.

The heating device 40 of Modification 3 is more advantageous than the heating device 10 of Embodiment 1 in that the current flowing through the upper electrodes 16a and 16d can be further reduced.

On the other hand, the heating device 10 of Embodiment 1 is advantageous over Modification 3 in that the structure can be simplified and the heating device can be easily designed and manufactured.

(Embodiment 2)
<Configuration of Heating Apparatus of Embodiment 2>
A heating apparatus according to a second embodiment (hereinafter referred to as embodiment 2) will be described below with reference to FIGS. 19 to 22. FIG. FIG. 19 is a schematic plan view showing a heating device according to Embodiment 2. FIG. 20 is an enlarged schematic plan view showing region A in FIG. 19 in the heating device according to Embodiment 2. FIG. 21 and 22 are cross-sectional views of main parts showing a heating device according to Embodiment 2. FIG. 21 is a cross-sectional view of the main part in the xz direction shown in FIG. 19, and FIG. 22 is a cross-sectional view of the main part in the yz direction shown in FIG.

As shown in FIG. 19, the heating device 50 of the second embodiment has a substrate 51, a heat generating portion 52, and a plurality of magnetic field generating portions 62. The plurality of magnetic field generating portions 62 are located inside the substrate 51. The difference from the heating device 10 of the first embodiment is that it has a patterned arrangement structure. A specific configuration of the heating device 50 according to the second embodiment will be described below.

As shown in FIGS. 21 and 22 , the heat generating portion 52 includes a plurality of magnetic body portions (first magnetic body portions) 53 . The plurality of magnetic parts 53 have a patterned array structure on the substrate 51 . Specifically, the plurality of magnetic parts 53 are arranged in an array on the substrate 51 . The plurality of magnetic body portions 53 and the plurality of magnetic field generation portions 62 are provided in the same number, and overlap each other in plan view. Therefore, the plurality of magnetic field generators 62 are arranged in an array in the substrate 51 .

Each of the plurality of magnetic body portions 53 generates heat due to magnetic hysteresis loss occurring in the magnetic body portion 53 due to the alternating magnetic field (external magnetic field) generated by each of the plurality of magnetic field generation portions 62 . The magnetic body portion 53 of Embodiment 2 is formed in a circular shape in plan view.

A detailed configuration of the magnetic field generator 62 according to the second embodiment will now be described. FIG. 20 is an enlarged view of region A in FIG. 19, but omits the heat generating portion 52 (magnetic body portion 53) and the like. As shown in FIGS. 20 to 22, the magnetic field generator 62 of the second embodiment includes an upper electrode 56a, a lower electrode 56b, columnar electrodes 54a and 54b, a loop electrode (annular electrode) 54c, an AC power supply RF and

The loop electrode 54c is formed in an annular shape with a part missing in plan view. The diameter of the loop electrode 54c is larger than the diameter of the magnetic portion 53, and the loop electrode 54c overlaps the magnetic portion 53 in plan view. The ends of the loop electrode 54c (corresponding to the notched portions of the ring) are connected to the columnar electrodes 54a and 54b, respectively. The columnar electrode 54a is connected to the upper electrode 56a, and the columnar electrode 54b is connected to the lower electrode 56b. The upper electrode 56a and the lower electrode 56b are connected to an AC power supply RF.

In addition, the upper electrode 56a and the lower electrode 56b intersect in plan view, and more preferably intersect at right angles. In plan view, the loop electrode 54c and the heating portion 52 (the magnetic portion 53) are arranged so as to overlap the intersection of the upper electrode 56a and the lower electrode 56b. More specifically, when there are m upper electrodes 56a and n lower electrodes 56b, the loop electrodes 54c and the heating portions 52 are arranged in a two-dimensional matrix of m×n.

As shown in FIGS. 21 and 22, the heat insulating layer 55 is arranged between the loop electrode 54c and the magnetic section 53 so as to overlap the magnetic section 53 in plan view. The insulating layer 57 is formed so as to fill a portion of the substrate 51 other than the magnetic field generating portion 62 and the heat insulating layer 55 . The heat insulating layer 55 is made of an insulator having a lower thermal conductivity than both the thermal conductivity of the magnetic body portion 53 and the thermal conductivity of the loop electrode 54c.

<Characteristics and Effects of the Heating Device of Embodiment 2>
As shown in FIGS. 19 to 22, one of the features of the heating device 50 of Embodiment 2 is that it has a plurality of heat generating portions 52 and a plurality of magnetic field generating portions 62 for generating AC magnetic fields. is. The heat generating portion 52 includes a magnetic body portion 53 heated by an alternating magnetic field. In particular, the same number of heat generation units 52 and magnetic field generation units 62 are provided. The heating device 50 of Embodiment 2 can be locally heated by having such a configuration. The reason for this will be described below with reference to FIGS. 19 to 22. FIG.

First, the heat generation mechanism of the heating device 50 of Embodiment 2 will be described. As shown in FIGS. 20 to 22, when a voltage is applied between the upper electrode 56a and the lower electrode 56b by the AC power supply RF, current flows through the columnar electrodes 54a and 54b to the loop electrode 54c. Therefore, an alternating magnetic field along the z-direction is generated radially inward of the loop electrode 54c. Since the loop electrode 54 c and the magnetic body portion 53 overlap each other in plan view, the magnetic body portion 53 is acted upon by this alternating magnetic field. As a result, magnetic hysteresis loss occurs in the magnetic body portion 53 to generate heat, as in the heat generating portion 12 (first magnetic layer 13) of the first embodiment.

In the heating device 50 of the second embodiment, the upper electrode 56a and the lower electrode 56b intersect in plan view, and the loop electrode 54c and the loop electrode 54c overlap the intersecting portion of the upper electrode 56a and the lower electrode 56b. A heat generating portion 52 (magnetic body portion 53) is arranged. Therefore, it is possible to heat only the magnetic body portion 53 located at the intersection of the upper electrode 56a through which the current is passed and the lower electrode 56b through which the current is passed.

As described above, in the heating device 10 of Embodiment 1, the alternating magnetic field is applied to all of the plurality of heat-generating portions 12, and the magnetization state of the second magnetic layer 14 is modulated. The first magnetic layer 13 that is heated and the first magnetic layer 13 that is not heated by an alternating magnetic field are changed, and only an arbitrary heat generating portion 12 (first magnetic layer 13) is heated. .

On the other hand, in the heating device 50 of the second embodiment, one magnetic field generating section 62 is provided for one heat generating section 52, and an alternating magnetic field is applied to an arbitrary heat generating section 52, thereby generating an arbitrary amount of heat. It is different from the heating device 10 of the first embodiment in that it is configured so that only the portion 52 (the magnetic portion 53) can generate heat.

Therefore, the heating device 50 of the second embodiment is more advantageous than the heating device 10 of the first embodiment in that the configuration of the heat generating portion 52 can be simplified. On the other hand, the heating device 10 of the first embodiment is more advantageous than the heating device 50 of the second embodiment in that the configuration of the magnetic field generator 61 can be simplified.

(Example)
EXAMPLES The present invention will be described in more detail below based on examples, but the present invention is not limited to these examples.

<Structure of Heating Apparatus of Example>
Since the heating device of the example corresponds to the heating device 50 of the second embodiment, repeated description will be omitted. However, in order to be applicable to the cell culture device, the upper surface of the magnetic body portion 53 included in the heat generating portion 52 is covered with a protective film, and the upper surface of this protective film is formed with a temperature responsive portion. An example will be explained.

<Manufacturing Method of Heating Apparatus of Example>
First, on a silicon (Si) substrate having a silicon oxide (SiO ₂ ) film formed on its upper surface, 50 rows of ridges each having a width of 5 μm and a length of 500 μm were formed at intervals of 5 μm by photolithography and etching techniques. A resist pattern was formed. After that, a conductor film made of copper was deposited to a thickness of 300 nm on the silicon oxide film and the resist pattern by a sputtering method. Subsequently, the conductor film outside the trench was removed by a chemical mechanical polishing (CMP) method, and a lower electrode array made of the conductor film was formed in the trench. After that, the resist pattern was removed by ashing. Subsequently, a silicon oxide film having good embedding properties was formed on the silicon oxide film so as to cover the lower electrode array using a spin on glass (SOG) method.

Next, by photolithography technology and etching technology, contact holes are formed in the silicon oxide film to reach the lower electrode array. Subsequently, a conductor film made of tungsten was deposited by a sputtering method so as to fill the inside of the contact hole. After that, unnecessary conductor films outside the contact holes were removed by the CMP method to form columnar electrodes. After that, a silicon oxide film was further formed using the SOG method.

Next, an upper electrode array and columnar electrodes were formed in the same manner as the lower electrode array described above. After that, a silicon oxide film was further formed using the SOG method, followed by planarization by the CMP method and exposing the surfaces of the columnar electrodes. After that, a resist pattern was formed by photolithography technology and etching technology. Subsequently, a conductor film made of copper was deposited on the resist pattern by sputtering, and a loop electrode was formed through CMP and ashing. After that, a silicon oxide film was formed on the silicon oxide film so as to cover the loop electrode using the SOG method.

Next, nickel-iron (NiFe) was deposited inside the loop electrode in plan view by a sputtering method to form a two-dimensionally arranged magnetic body portion.

Next, gold was deposited on the upper surface of the magnetic body portion by a sputtering method to form a protective film. Subsequently, poly(N-isopropylacrylamide) was applied on the upper surface of the protective film by a spin coating method to form a temperature responsive portion.

<Method for evaluating the heating device of the example>
In the examples, the crystal structure of the magnetic body portion and the like can be easily confirmed by X-ray diffraction (XRD). In addition, observation of a lattice image with a transmission electron microscope (TEM), and confirmation of a single crystal or polycrystalline crystal structure and laminated structure from a spot-like pattern or a ring-like pattern in an electron beam diffraction image. can also

Moreover, information on the state density of the magnetic body portion can be confirmed by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), or the like. In addition, the composition distribution of the magnetic body part etc. can be determined by XPS, Electron Probe Micro Analyzer (EPMA), Energy Dispersive X-ray Spectroscopy (EDX), secondary ion mass spectrometry ( It can be confirmed using Secondary Ion Mass Spectrometry (SIMS) or the like. In addition, the composition distribution of the magnetic body portion and the like can also be confirmed using techniques such as emission spectrometry and mass spectrometry using inductively coupled plasma (ICP).

Also, the electrical conductivity and carrier density of the electrodes and the like can be confirmed by electrical measurement and Hall effect measurement using the four-probe method.

Moreover, the pattern arrangement of the heat-generating portions can be confirmed using a scanning electron microscope (SEM), an optical microscope, or the like.

The invention made by the present inventor has been specifically described above based on the embodiments, but the present invention is not limited to the above embodiments, and can be variously modified without departing from the scope of the invention. Needless to say.

Reference Signs List 10, 30, 40, 50 heating devices 11, 51 substrates 12, 12a, 12b, 12c, 12d, 52 heat generating portion 13 first magnetic layer (first magnetic portion)
14, 14a, 14b second magnetic layer (second magnetic portion)
15, 55 heat insulating layer 16 control electrodes 16a, 56a upper electrode (first electrode)
16b, 16c, 56b lower electrode (second electrode)
16d upper electrode (third electrode)
17, 17a, 57 insulating layer 18 protective film 19, 19a, 19b temperature response section 20 cell culture device 21 container 22 culture solution 23 cell 53 magnetic body section (first magnetic body section)
54a, 54b columnar electrode 54c loop electrode (annular electrode)
61, 62 magnetic field generator

Claims (13)

having a substrate and a heat generating portion composed of a plurality of first magnetic portions arranged on the substrate;
The plurality of first magnetic body parts have a patterned array structure,
Some of the plurality of first magnetic bodies can selectively generate heat by an alternating magnetic field,
A plurality of second magnetic bodies and a control electrode are provided in the substrate,
each of the plurality of second magnetic body portions magnetically interacts with each of the plurality of first magnetic body portions, and the magnetization state is modulated by the control electrode;
The heating device, wherein whether or not each of the plurality of first magnetic body parts generates heat by the alternating magnetic field changes depending on the magnetization state of each of the plurality of second magnetic body parts. The heating device according to claim 1,
The heating device, wherein the coercive force of each of the plurality of second magnetic body portions is greater than the coercive force of each of the plurality of first magnetic body portions . In the heating device according to claim 2,
The heating device, wherein each of the plurality of second magnetic body parts overlaps with each of the plurality of first magnetic body parts in plan view. The heating device according to claim 3,
The control electrode includes a plurality of rod-shaped first electrodes and a plurality of second electrodes,
The heating device, wherein each of the plurality of first electrodes and each of the plurality of second electrodes intersect in plan view. The heating device according to claim 4,
The heating device, wherein each of the plurality of second magnetic body portions overlaps an intersection of each of the plurality of first electrodes and each of the plurality of second electrodes in plan view. In the heating device according to claim 5,
each of the plurality of second magnetic body portions and each of the plurality of first electrodes are in contact,
The heating device, wherein each of the plurality of first electrodes is made of a non-magnetic metal having electrons in f-orbitals. In the heating device according to claim 5,
An insulating layer made of a non-magnetic insulator is formed on each of the plurality of second magnetic parts,
the control electrode further comprises a plurality of third electrodes;
each of the plurality of first electrodes and each of the plurality of third electrodes are made of a non-magnetic metal having electrons in f orbitals;
each of the plurality of third electrodes is parallel to each of the plurality of first electrodes in plan view;
The heating device, wherein the second magnetic body portion and the insulating layer are sandwiched between the first electrode and the third electrode. In the heating device according to claim 5,
The heating device, wherein the center of each of the plurality of second magnetic body portions does not coincide with the center of the intersecting portion in plan view. The heating device according to claim 1,
A heat insulating portion is provided between each of the plurality of first magnetic body portions and each of the plurality of second magnetic body portions,
The heating device, wherein the thermal conductivity of the heat insulation portion is lower than the thermal conductivity of each of the plurality of first magnetic body portions and the thermal conductivity of each of the plurality of second magnetic body portions. having a substrate and a heat generating portion composed of a plurality of first magnetic portions arranged on the substrate;
The plurality of first magnetic body parts have a patterned array structure,
A plurality of magnetic field generators are provided in the substrate,
The plurality of magnetic field generators have a patterned array structure,
Some of the plurality of first magnetic body portions may selectively generate heat, and each of the plurality of first magnetic body portions may generate heat by the alternating magnetic field generated by each of the plurality of magnetic field generation units. can
Each of the plurality of magnetic field generating units includes an annular electrode formed in a partially cut annular shape in a plan view, and an AC power source for supplying an alternating current to the annular electrode,
The heating device, wherein each of the plurality of first magnetic body parts overlaps with the annular electrode in a plan view. Having the heating device according to claim 1 and a container holding a culture solution containing cells,
The cell culture device, wherein the container is arranged above the heat-generating part. In the cell culture device according to claim 11,
A temperature responsive part made of a temperature responsive material having an upper critical solution temperature or a lower critical solution temperature is formed on each of the plurality of first magnetic body parts,
The cell culture device, wherein the temperature responsive part is in contact with the culture solution inside the container. In the cell culture device according to claim 12,
The cell culture device, wherein the upper surface of each of the plurality of first magnetic body parts is covered with a protective film that does not react with the culture solution.

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