JP7089948B2 - Board processing equipment and board processing method - Google Patents

Description

Exemplary embodiments of the present disclosure relate to a substrate processing apparatus and a substrate processing method.

Patent Document 1 has a hot plate for heat-treating a substrate, and when the temperature setting of the hot plate is changed, a substrate that supplies a gas adjusted to the same temperature as the new set temperature to the back surface of the hot plate. The processing apparatus is disclosed.

Japanese Unexamined Patent Publication No. 2008-1666559

An exemplary embodiment of the present disclosure provides a substrate processing apparatus effective in reducing energy consumption for changing the heat treatment temperature of a substrate.

According to one exemplary embodiment, the substrate processing apparatus has a heat-treated portion that has a facing portion facing the substrate and heat-treats the substrate by adjusting the temperature of the facing portion, and the temperature of the facing portion is set to the first temperature. A heat treatment control unit that controls the heat treatment unit so that the temperature of the facing portion is adjusted to the second temperature and the second heat treatment is performed on the substrate after the first heat treatment. Between the first heat treatment and the second heat treatment, a temperature change control unit that controls the heat treatment unit so as to perform a temperature change process that changes the temperature of the facing portion from the first temperature to the second temperature, and the first heat treatment and the second heat treatment. The execution condition of the temperature change process by the temperature change control unit is set so that the time from the completion time of the first heat treatment to the completion time of the temperature change process becomes longer according to the longer time between the heat treatments. It is equipped with a change condition setting unit.

According to the exemplary embodiment of the present disclosure, it is possible to provide a substrate processing apparatus effective for suppressing energy consumption for changing the heat treatment temperature of the substrate.

It is a figure which shows the schematic structure of the substrate processing system which concerns on one exemplary Embodiment. It is a schematic diagram which shows the internal structure of the substrate processing apparatus which concerns on one exemplary Embodiment. It is a schematic diagram which illustrates the schematic structure of the heat treatment apparatus. It is a block diagram which illustrates the hardware composition of a control device. It is a flowchart which illustrates the heat treatment procedure. It is a flowchart which exemplifies the temperature lowering processing procedure. It is a flowchart which exemplifies the temperature rise processing procedure. It is a graph which illustrates the transition of the temperature of a hot plate by the temperature lowering treatment. It is a graph which illustrates the transition of the temperature of a hot plate by a temperature raising process.

Hereinafter, various exemplary embodiments will be described. In the description, the same elements or elements having the same function are designated by the same reference numerals, and duplicate description will be omitted.

[Board processing system]
The substrate processing system 1 is a system that forms a photosensitive film, exposes the photosensitive film, and develops the photosensitive film on the substrate. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a resist film. The substrate processing system 1 includes a coating / developing device 2 and an exposure device 3. The exposure apparatus 3 performs an exposure process of a resist film (photosensitive film) formed on the wafer W (substrate). Specifically, the exposed portion of the resist film is irradiated with energy rays by a method such as immersion exposure. The coating / developing apparatus 2 performs a process of forming a resist film on the surface of the wafer W (substrate) before the exposure process by the exposure apparatus 3, and develops the resist film after the exposure process.

[Board processing equipment]
Hereinafter, the configuration of the coating / developing device 2 will be described as an example of the substrate processing device. As shown in FIGS. 1 and 2, the coating / developing device 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100.

The carrier block 4 introduces the wafer W into the coating / developing device 2 and derives the wafer W from the coating / developing device 2. For example, the carrier block 4 can support a plurality of carriers C for the wafer W, and has a built-in transfer arm A1. The carrier C accommodates, for example, a plurality of circular wafers W. The transfer arm A1 takes out the wafer W from the carrier C, passes it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier C.

The processing block 5 has a plurality of processing modules 11, 12, 13, and 14. The processing modules 11, 12, and 13 include a coating unit U1, a heat treatment unit U2, and a transfer arm A3 for transporting the wafer W to these units.

The processing module 11 forms an underlayer film on the surface of the wafer W by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 11 coats the treatment liquid for forming the underlayer film on the wafer W. The heat treatment unit U2 of the processing module 11 performs various heat treatments accompanying the formation of the underlayer film.

The processing module 12 forms a resist film on the lower layer film by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 12 coats the treatment liquid for forming the resist film on the lower layer film. The heat treatment unit U2 of the processing module 12 performs various heat treatments accompanying the formation of the resist film.

The processing module 13 forms an upper layer film on the resist film by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 13 coats the liquid for forming the upper layer film on the resist film. The heat treatment unit U2 of the processing module 13 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 14 incorporates a developing unit U3, a heat treatment unit U4, and a transport arm A3 for transporting the wafer W to these units. The processing module 14 develops the resist film after exposure by the developing unit U3 and the heat treatment unit U4. The developing unit U3 applies a developing solution on the surface of the exposed wafer W and then rinses it with a rinsing solution to develop a resist film. The heat treatment unit U4 performs various heat treatments associated with the development process. Specific examples of the heat treatment include heat treatment before development treatment (PEB: Post Exposure Bake), heat treatment after development treatment (PB: Post Bake), and the like.

A shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The elevating arm A7 elevates the wafer W between the cells of the shelf unit U10.

A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 transfers the wafer W to and from the exposure apparatus 3. For example, the interface block 6 has a built-in transfer arm A8 and is connected to the exposure apparatus 3. The transfer arm A8 passes the wafer W arranged in the shelf unit U11 to the exposure device 3, receives the wafer W from the exposure device 3, and returns the wafer W to the shelf unit U11.

The control device 100 controls the coating / developing device 2 so as to execute the coating / developing process in the following procedure, for example. First, the control device 100 controls the transfer arm A1 so as to convey the wafer W in the carrier C to the shelf unit U10, and controls the elevating arm A7 so as to arrange the wafer W in the cell for the processing module 11.

Next, the control device 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 so as to form an underlayer film on the surface of the wafer W. After that, the control device 100 controls the transfer arm A3 so as to return the wafer W on which the underlayer film is formed to the shelf unit U10, and controls the elevating arm A7 so as to arrange the wafer W in the cell for the processing module 12. ..

Next, the control device 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 12. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 so as to form a resist film on the lower film of the wafer W. After that, the control device 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the elevating arm A7 so as to arrange the wafer W in the cell for the processing module 13.

Next, the control device 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to each unit in the processing module 13. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 so as to form an upper layer film on the resist film of the wafer W. After that, the control device 100 controls the transfer arm A3 so as to transfer the wafer W to the shelf unit U11.

Next, the control device 100 controls the transfer arm A8 so as to send the wafer W of the shelf unit U11 to the exposure device 3. After that, the control device 100 controls the transfer arm A8 so as to receive the wafer W subjected to the exposure process from the exposure device 3 and arrange it in the cell for the processing module 14 in the shelf unit U11.

Next, the control device 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U11 to each unit in the processing module 14, and the developing unit U3 and the developing unit U3 so as to perform a developing process on the resist film of the wafer W. The heat treatment unit U4 is controlled. After that, the control device 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the elevating arm A7 and the transfer arm A1 so as to return the wafer W to the carrier C. This completes the coating / developing process.

The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating / developing apparatus 2 exemplified above. The substrate processing apparatus may be any as long as it includes a heat treatment unit U2 or a heat treatment unit U4 and a control device 100 capable of controlling the heat treatment unit U2.

[Heat treatment equipment]
Subsequently, the heat treatment apparatus 20 constituting the heat treatment units U2 and U4 will be illustrated. The heat treatment apparatus 20 (heat treatment unit) has a facing portion facing the wafer W, and heat-treats the wafer W by adjusting the temperature of the facing portion. The heat treatment may be either a process of heating the wafer W or a process of cooling the wafer W. The heating means applying heat energy to the wafer W so that the temperature of the wafer W is higher than that before being carried into the heat treatment apparatus 20. Cooling means absorbing heat energy from the wafer W so that the temperature of the wafer W is lower than that before being carried into the heat treatment apparatus 20. Hereinafter, the configuration of the heat treatment apparatus 20 for heating the wafer W will be illustrated.

As shown in FIG. 3, the heat treatment apparatus 20 includes a hot plate 30 (opposing portion), a temperature sensor 40, a hot plate holding portion 50, a cooling portion 60, an elevating portion 70, and a temperature control circuit 80. .. The hot plate 30 supports the horizontally arranged wafer W and faces the back surface of the wafer W. As an example of the heat generating element, the hot plate 30 has a built-in heating wire 31 that generates heat according to the supply of electric power. By generating heat from the heating wire 31, the temperature of the hot plate 30 can be raised to the temperature for heating the wafer W. Further, the temperature of the hot plate 30 can be maintained at a desired temperature by adjusting the power supply to the heating wire 31.

The temperature sensor 40 is composed of, for example, a thermoelectric pair, and converts the temperature information of the hot plate 30 into an electric signal and outputs the temperature information. The hot plate holding portion 50 holds the hot plate 30. The hot plate holding portion 50 has a bottom plate 51 and a peripheral wall 52. The bottom plate 51 faces the back surface (lower surface) of the hot plate 30 with a gap. The peripheral wall 52 surrounds the space between the hot plate 30 and the bottom plate 51 (hereinafter, referred to as “cooling space 54”).

The cooling unit 60 blows a cooling gas onto the hot plate 30. For example, the cooling unit 60 has a plurality of nozzles 61, an air supply source 62, and a plurality of valves 63. The plurality of nozzles 61 are scattered along a plane parallel to the hot plate 30 between the hot plate 30 and the bottom plate 51, and are fixed to the bottom plate 51. Each of the plurality of nozzles 61 is open upward (including diagonally upward), and a cooling gas is blown onto the back surface side of the hot plate 30. The air supply source 62 supplies cooling gas to the plurality of nozzles 61. The cooling gas is a gas adjusted to a temperature at which the heat of the hot plate 30 can be absorbed. The cooling gas may be an inert gas such as nitrogen gas or air. The air supply source 62 may be a gas tank or a blower provided exclusively for the coating / developing device 2, or an air supply facility shared by a plurality of devices at the installation location of the coating / developing device 2. May be good. The valve 63 is a valve that can be driven by electric power, such as an electromagnetic valve, and adjusts the opening degree of the flow path from the air supply source 62 to the plurality of nozzles 61.

The elevating part 70 raises and lowers the wafer W on the hot plate 30. The elevating unit 70 is provided below the hot plate 30, and has a plurality of elevating pins 71 and an elevating drive unit 72. The plurality of elevating pins 71 project upward, and the hot plate 30 is formed with a plurality of through holes 30a through which the plurality of elevating pins 71 pass. The elevating drive unit 72 raises and lowers a plurality of elevating pins 71 using, for example, an electric motor or an air cylinder as a power source. As a result, the ends of the plurality of elevating pins 71 appear and disappear above the hot plate 30 to raise and lower the wafer W. The temperature control circuit 80 is a circuit that adjusts the power supplied to the heating wire 31 so that the temperature of the hot plate 30 (for example, the temperature detected by the temperature sensor 40) approaches the target temperature.

The heat treatment device 20 configured as described above is controlled by the control device 100. The control device 100 adjusts the temperature of the hot plate 30 to the first temperature and performs the first heat treatment on the wafer W, and after the first heat treatment, adjusts the temperature of the hot plate 30 to the second temperature and puts the wafer W on the wafer W. (Ii) It is configured to perform control of the heat treatment apparatus 20 to perform the heat treatment. The control device 100 further executes the control of the heat treatment device 20 so as to perform a temperature change process for changing the temperature of the hot plate 30 from the first temperature to the second temperature between the first heat treatment and the second heat treatment. It is configured to do. The control device 100 increases the time from the completion time of the first heat treatment to the completion time of the temperature change processing according to the lengthening of the time between the first heat treatment and the second heat treatment. It is configured to further execute the setting of the execution condition of. For example, the control device 100 has a heat treatment control unit 111, a temperature change control unit 112, and a change condition setting unit 113 as a functional configuration (hereinafter referred to as “functional module”).

The heat treatment control unit 111 controls the heat treatment apparatus 20 so as to sequentially heat treat a plurality of wafers W. The heat treatment control unit 111 controls the heat treatment apparatus 20 so as to adjust the temperature of the hot plate 30 to a predetermined temperature and perform heat treatment of each wafer W. The predetermined temperature may differ depending on the type of wafer W and the like. In other words, the heat treatment control unit 111 adjusts at least the temperature of the hot plate 30 to the first temperature to perform the first heat treatment on the wafer W, and after the first heat treatment, adjusts the temperature of the hot plate 30 to the second temperature. The heat treatment apparatus 20 is controlled so as to perform the second heat treatment on the wafer W. The first temperature and the second temperature may be different.

The temperature change control unit 112 controls the heat treatment apparatus 20 so as to perform a temperature change process for changing the temperature of the hot plate 30 from the first temperature to the second temperature between the first heat treatment and the second heat treatment. For example, when the second temperature is lower than the first temperature, the temperature change control unit 112 reduces the power supplied to the heating wire 31 in the temperature change process, and the cooling unit 60 supplies cooling gas to the hot plate 30. The heat treatment apparatus 20 is controlled so as to spray. The temperature change control unit 112 controls the heat treatment apparatus 20 so as to increase the power supplied to the heating wire 31 in the temperature change process when the second temperature is higher than the first temperature. The temperature changing process also includes a case where both raising and lowering the temperature are performed before the temperature of the hot plate 30 is changed from the first temperature to the second temperature. For example, in the temperature change process when the second temperature is lower than the first temperature, the temperature of the hot plate 30 is lowered from the first temperature to a temperature lower than the second temperature, and then the temperature of the hot plate 30 is changed to the second temperature. It may include a process of raising the temperature to a temperature.

The change condition setting unit 113 increases the time between the first heat treatment and the second heat treatment (hereinafter referred to as “interval time”) from the completion time of the first heat treatment to the completion time of the temperature change process. The execution condition of the temperature change process by the temperature change control unit 112 is set so as to lengthen the time until. Increasing the time from the completion time of the first heat treatment to the completion time of the temperature change process slows down the temperature change rate in the temperature change process, and from the completion time of the first heat treatment to the start time of the temperature change process. This includes lengthening the time and combining them. The completion time of the temperature change process means the time when the temperature of the hot plate 30 reaches the second temperature, and the time when the temperature of the hot plate 30 after that time is maintained at the second temperature. That is, even if the temperature of the hot plate 30 reaches the second temperature, if the temperature of the hot plate 30 immediately deviates from the second temperature after the time, the time does not correspond to the completion time of the temperature change process. ..

When the second temperature is lower than the first temperature, the change condition setting unit 113 slows down the temperature change speed (hereinafter, referred to as “temperature change speed”) in the temperature change process as the interval time becomes longer. The execution condition of the temperature change process may be set so as to be performed. For example, the change condition setting unit 113 may set a control parameter that determines the magnitude of the temperature change speed so that the temperature change speed is slowed down even though the interval time is long. The change condition setting unit 113 may correlate the control parameter linearly or non-linearly with respect to the length of the interval time, or may change the control parameter stepwise as the interval time exceeds a predetermined threshold value. good.

For example, the change condition setting unit 113 sets the execution condition of the temperature change process so as to reduce the amount of the cooling gas sprayed in the temperature change process as the time between the first heat treatment and the second heat treatment becomes longer. It may be set. The change condition setting unit 113 may reduce the amount of the cooling gas blown linearly or non-linearly with respect to the length of the interval time, or stepwise according to the interval time exceeding a predetermined threshold value. It may be reduced.

The change condition setting unit 113 increases the time from the completion time of the first heat treatment to the start time of the temperature change process according to the lengthening of the interval time when the second temperature is higher than the first temperature. The execution condition of the temperature change process may be set in. At this time, the change condition setting unit 113 lengthens the time from the completion time of the first heat treatment to the start time of the temperature change process within the range in which the temperature change process is completed by the start time of the second heat treatment.

When the interval time is longer than the reference time, the change condition setting unit 113 may set the execution condition of the temperature change process so as to suspend the power supply to the heating wire 31. On the other hand, when the interval time is shorter than the preset reference time, the change condition setting unit 113 does not stop the supply of energy for temperature control to the hot plate 30 (for example, the power supply to the heating wire 31). The execution condition of the temperature change process may be set as follows.

By suspending the power supply to the heating wire 31, the energy consumption during the shutdown period can be reduced. Hereinafter, this reduction is referred to as "reduction energy". On the other hand, if the power supply to the heating wire 31 is temporarily stopped, the energy consumption may increase because the temperature of the hot plate 30 is raised again. Hereinafter, this increase is referred to as "increased energy". The reduced energy increases as the period of suspension of power supply to the heating wire 31 increases. For example, the above reference time is set to a length required to make the reduced energy equal to or higher than the increased energy.

The change condition setting unit 113 may change the reference time depending on whether the second temperature is lower than the first temperature or the second temperature is higher than the first temperature. Further, the change condition setting unit 113 may change the reference time according to the magnitude of the difference between the first temperature and the second temperature.

The control device 100 is composed of one or a plurality of control computers. For example, the control device 100 has a circuit 120 shown in FIG. The circuit 120 has one or more processors 121, a memory 122, a storage 123, an input / output port 124, and a timer 125. The storage 123 has a storage medium that can be read by a computer, such as a hard disk. The storage medium stores a program for causing the heat treatment apparatus 20 to execute the heat treatment procedure described later. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 122 temporarily stores the program loaded from the storage medium of the storage 123 and the calculation result by the processor 121. The processor 121 constitutes each of the above-mentioned functional modules by executing the above program in cooperation with the memory 122. The input / output port 124 inputs / outputs an electric signal to / from the elevating unit 70, the temperature control circuit 80, and the cooling unit 60 in accordance with a command from the processor 121. The timer 125 measures the elapsed time, for example, by counting a reference pulse having a fixed cycle.

The hardware configuration of the control device 100 is not necessarily limited to that constituting each functional module by a program. For example, each functional module of the control device 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) in which the logic circuit is integrated.

[Board processing method]
Subsequently, as an example of the substrate processing method, the heat treatment procedure executed by the substrate processing apparatus 10 by the heat treatment apparatus 20 will be described. In this heat treatment procedure, the temperature of the hot plate 30 is adjusted to the first temperature to perform the first heat treatment on the wafer W, and after the first heat treatment, the temperature of the hot plate 30 is adjusted to the second temperature to perform the first heat treatment on the wafer W. Including performing a second heat treatment. This heat treatment procedure further includes performing a temperature change process for changing the temperature of the hot plate 30 from the first temperature to the second temperature between the first heat treatment and the second heat treatment. This heat treatment procedure increases the time from the completion time of the first heat treatment to the completion time of the temperature change process according to the longer interval time (time between the first heat treatment and the second heat treatment). Further includes setting the execution conditions of the temperature change process in.

As shown in FIG. 5, the control device 100 first executes step S01. In step S01, the heat treatment control unit 111 sets a target temperature of the temperature of the hot plate 30 (for example, the temperature detected by the temperature sensor 40). After that, the temperature control circuit 80 adjusts the power supplied to the heating wire 31 so that the temperature of the hot plate 30 approaches the target temperature.

Next, the control device 100 executes steps S02, S03, S04, S05, and S06 in order. In steps S02, S03, S04, S05, and S06, the heat treatment control unit 111 controls the heat treatment apparatus 20 so as to maintain the temperature of the hot plate 30 in the vicinity of the target temperature and perform the heat treatment of the wafer W. For example, in step S02, the heat treatment control unit 111 waits for the wafer W to be carried in with the ends of the plurality of elevating pins 71 projecting onto the hot plate 30 by the elevating drive unit 72. In step S03, the heat treatment control unit 111 controls the heat treatment device 20 so that the plurality of elevating pins 71 supporting the carried-in wafer W are lowered by the elevating drive unit 72. As a result, the wafer W is arranged on the hot plate 30. In step S04, the heat treatment control unit 111 waits for the elapse of the preset heat treatment time. In step S05, the heat treatment control unit 111 controls the heat treatment apparatus 20 so that the elevating drive unit 72 raises the plurality of elevating pins 71 and the plurality of elevating pins 71 raise the wafer W from the hot plate 30. In step S06, the heat treatment control unit 111 waits for the wafer W to be carried out in a state where the end portions of the plurality of elevating pins 71 are projected onto the hot plate 30 by the elevating drive unit 72. This completes the heat treatment of the wafer W.

Next, the control device 100 executes step S07. In step S07, the heat treatment control unit 111 confirms whether or not there is a wafer W to be heat-treated next.

If there is a wafer W to be heat-treated next in step S07, the control device 100 executes steps S08 and S09. In step S08, the heat treatment control unit 111 confirms the target temperature preset for the next heat treatment. Hereinafter, the heat treatment completed up to step S06 is referred to as "first heat treatment", and the target temperature of the hot plate 30 for the first heat treatment is referred to as "first temperature". Hereinafter, the following heat treatment is referred to as "second heat treatment", and the target temperature of the hot plate 30 for the second heat treatment is referred to as "second temperature".

In step S09, the temperature change control unit 112 confirms whether or not the second temperature is lower than the first temperature. If the second temperature is lower than the first temperature in step S09, the control device 100 executes step S11. In step S11, the change condition setting unit 113 and the temperature change control unit 112 perform a process of lowering the first temperature to the second temperature (hereinafter, referred to as “temperature lowering process”). The specific contents of the temperature lowering treatment will be described later. If the second temperature is equal to or higher than the first temperature in step S09, the control device 100 executes step S13. In step S13, the temperature change control unit 112 confirms whether or not the second temperature is higher than the first temperature.

If the second temperature is higher than the first temperature in step S13, the control device 100 executes step S15. In step S15, the change condition setting unit 113 and the temperature change control unit 112 perform a process of raising the first temperature to the second temperature (hereinafter, referred to as “heating process”). The specific contents of the temperature raising process will be described later.

After executing steps S11 and S15, the control device 100 returns the process to step S02. When the second temperature is equal to or lower than the first temperature in step S13, the control device 100 returns the process to step S02 without executing steps S11 and S15. After that, as long as there is a wafer W to be heat-treated next, the heat treatment is repeated while performing the temperature lowering treatment or the raising temperature treatment as necessary. If there is no wafer W to be heat-treated next in step S07, the control device 100 completes the heat treatment.

Subsequently, a specific procedure for the temperature lowering treatment in step S11 will be illustrated. The temperature lowering treatment procedure is to perform a temperature change process of changing the temperature of the hot plate 30 from the first temperature to the second temperature, and to slow down the temperature change rate in the temperature change process as the interval time becomes longer. It includes setting the execution conditions of the temperature change process so as to. The temperature lowering treatment procedure is to blow the cooling gas onto the hot plate 30 in the temperature change treatment, and to reduce the amount of the cooling gas blown in the temperature change treatment as the interval time becomes longer. It may include setting the execution condition of. The temperature lowering treatment procedure may include setting the execution condition of the temperature change treatment so as to suspend the power supply to the heating wire 31 when the interval time is longer than the reference time. On the other hand, the temperature lowering treatment procedure may include setting the execution condition of the temperature change treatment so as not to stop the power supply to the heating wire 31 when the interval time is shorter than the reference time.

As shown in FIG. 6, the control device 100 first executes steps S21, S22, and S23. In step S21, the temperature change control unit 112 changes the target temperature of the hot plate 30 from the first temperature to the second temperature. After that, the temperature control circuit 80 adjusts the power supplied to the heating wire 31 so that the temperature of the hot plate 30 approaches the second temperature. In step S22, the change condition setting unit 113 calculates the interval time. In step S23, the change condition setting unit 113 confirms whether or not the interval time is equal to or less than the reference time.

If the interval time is equal to or less than the reference time in step S23, the control device 100 executes steps S24, S25, S26, and S27. In step S24, the change condition setting unit 113 sets the execution condition of the temperature change process so as to reduce the amount of the cooling gas blown in the temperature change process as the interval time becomes longer. In step S25, the temperature change control unit 112 controls the heat treatment apparatus 20 so that the cooling unit 60 starts blowing the cooling gas to the hot plate 30 at the spraying amount set in step S24. In step S26, the temperature change control unit 112 waits for the temperature of the hot plate 30 to reach the second temperature. In step S27, the temperature change control unit 112 controls the heat treatment device 20 so that the cooling unit 60 stops blowing the cooling gas onto the hot plate 30.

If the interval time exceeds the reference time in step S23, the control device 100 executes steps S31, S32, S33, S34, and S35. In step S31, the change condition setting unit 113 sets a period (hereinafter, referred to as “off period”) for stopping the power supply to the heating wire 31. For example, the change condition setting unit 113 sets the off period to the maximum value within a range in which the temperature of the hot plate 30 can be adjusted to the second temperature by the start time of the second heat treatment. In step S32, the temperature change control unit 112 controls the heat treatment device 20 so as to stop the power supply from the temperature control circuit 80 to the heating wire 31. In step S33, the temperature change control unit 112 waits for the elapse of the off period. In step S34, the temperature change control unit 112 controls the heat treatment apparatus 20 so as to start supplying electric power from the temperature control circuit 80 to the heating wire 31. In step S35, the temperature change control unit 112 waits for the temperature of the hot plate 30 to reach the second temperature. This completes the temperature lowering process.

FIG. 8 is a graph illustrating the transition of the temperature of the hot plate and the transition of the cooling energy by the above-mentioned temperature lowering treatment procedure. The horizontal axis shows the elapsed time, and the vertical axis shows the temperature of the hot plate 30 and the amount of energy consumed per unit time. The line L11 shows the transition of the temperature, the line L12 shows the transition of the cooling energy per unit time, and the line L13 shows the transition of the power supply to the heating wire 31. The cooling energy is the energy consumed for blowing the cooling gas. The time t11 is the completion time of the first heat treatment, and the time t12 is the start time of the second heat treatment.

Both (a) of FIG. 8 and (b) of FIG. 8 exemplify the temperature transition of the hot plate 30 when the interval time between the time t11 and the time t12 is equal to or less than the reference time. In FIG. 8B, since the interval time between the time t11 and the time t12 is longer than that in FIG. 8A, the amount of the cooling gas blown is reduced, and the temperature drops accordingly. The speed is slowing down. Although the execution period of the temperature change process is lengthened due to the decrease in the descent rate, the energy consumption per unit time is low, and the energy consumption for cooling in the temperature change process is reduced. When the interval time is longer than the time ct required to cool from the first temperature T1 to the second temperature T2 by natural heat dissipation, the amount of cooling gas sprayed is set to zero and the energy consumption for cooling is set to zero. It is also possible to do.

FIG. 8C exemplifies the temperature transition of the hot plate 30 when the interval time between the time t11 and the time t12 is longer than the reference time. If the interval time is longer than the reference time, the off period is set, and the power supply to the heating wire 31 is stopped during the off period. Therefore, the temperature of the hot plate 30 drops due to natural heat dissipation until the time t13 when the off period is completed. In the example of FIG. 8C, the temperature of the hot plate 30 at time t13 is lower than the second temperature T2. After that, the power supply to the heating wire 31 is restarted, and the temperature of the hot plate 30 is adjusted to the second temperature T2.

If the power supply to the heating wire 31 is stopped during the off period, the energy consumption is reduced by that amount (the above-mentioned reduced energy). On the other hand, additional energy is required to raise the temperature of the hot plate 30 again between the time t13 and the time t12 when the off period is completed (the above-mentioned increased energy). When the magnitude of the reduced energy exceeds the magnitude of the increased energy, the energy consumption is reduced accordingly.

Subsequently, a specific procedure for the temperature raising process in step S15 will be illustrated. The temperature rise treatment procedure includes performing a temperature change treatment for changing the temperature of the hot plate 30 from the first temperature to the second temperature. The temperature raising procedure is such that the time from the completion time of the first heat treatment to the start time of the temperature change treatment is lengthened as the time between the first heat treatment and the second heat treatment becomes longer. It further includes setting execution conditions. The temperature raising process procedure may include setting execution conditions for the temperature change process so as to suspend the power supplied to the heating wire 31 when the interval time is longer than the reference time. On the other hand, the temperature rise processing procedure may include setting the execution condition of the temperature change processing so as not to stop the power supply to the heating wire 31 when the interval time is shorter than the reference time.

As shown in FIG. 7, the control device 100 first executes steps S41 and S42. In step S41, the change condition setting unit 113 calculates the interval time. In step S42, the change condition setting unit 113 confirms whether or not the interval time is equal to or less than the reference time.

If the interval time is equal to or less than the reference time in step S42, the control device 100 executes steps S43 and S44. In step S43, the change condition setting unit 113 lengthens the time from the completion time of the first heat treatment to the start time of the temperature raising process according to the lengthening of the time between the first heat treatment and the second heat treatment. .. At this time, the change condition setting unit 113 lengthens the time from the completion time of the first heat treatment to the start time of the temperature change process within the range in which the temperature raising process is completed by the start time of the second heat treatment. In step S44, the temperature change control unit 112 waits for the start time of the temperature rise process.

If the interval time exceeds the reference time in step S42, the control device 100 executes steps S45, S46, S47, and S48. In step S45, the change condition setting unit 113 sets a period (hereinafter, referred to as “off period”) for stopping the power supply to the heating wire 31. For example, the change condition setting unit 113 sets the off period to the maximum value within a range in which the temperature of the hot plate 30 can be adjusted to the second temperature by the start time of the second heat treatment. In step S46, the temperature change control unit 112 controls the heat treatment device 20 so as to stop the power supply from the temperature control circuit 80 to the heating wire 31. In step S47, the temperature change control unit 112 waits for the elapse of the off period. In step S48, the temperature change control unit 112 starts supplying electric power from the temperature control circuit 80 to the heating wire 31.

After executing step S44 or step S48, the control device 100 executes steps S51 and S52. In step S51, the temperature change control unit 112 changes the target temperature of the hot plate 30 from the first temperature to the second temperature. After that, the temperature control circuit 80 adjusts the power supplied to the heating wire 31 so that the temperature of the hot plate 30 approaches the second temperature. In step S52, the temperature change control unit 112 waits for the temperature of the hot plate 30 to reach the second temperature. This completes the temperature rise process.

FIG. 9 is a graph illustrating the transition of the temperature of the hot plate by the above-mentioned temperature raising treatment procedure. The horizontal axis shows the elapsed time, and the vertical axis shows the temperature of the hot plate 30 and the amount of energy consumed per unit time. The line L21 shows the transition of the temperature, and the line L23 shows the transition of the power supply to the heating wire 31. The time t21 indicates the completion time of the first heat treatment, and the time t22 indicates the start time of the second heat treatment.

Both (a) of FIG. 9 and (b) of FIG. 9 exemplify the temperature transition of the hot plate 30 when the interval time between the time t21 and the time t22 is equal to or less than the reference time. In FIG. 9B, the interval time between the time t21 and the time t22 is longer than that in FIG. 9A.

According to the temperature rise treatment procedure described above, the time from the completion time of the first heat treatment to the start time of the temperature rise treatment is lengthened as the time between the first heat treatment and the second heat treatment becomes longer. .. In FIG. 9A, the temperature of the hot plate 30 starts immediately at time t21, whereas in FIG. 9B, the temperature of the hot plate 30 continues from time t21 until time t23. It is maintained at the first temperature T1 before the temperature rise. Therefore, in FIG. 9B, the power consumption of the hot plate 30 during the interval time is kept low.

FIG. 9C exemplifies the temperature transition of the hot plate 30 when the interval time between the time t21 and the time t22 is longer than the reference time. If the interval time is longer than the reference time, the off period is set, and the power supply to the heating wire 31 is stopped during the off period. Therefore, the temperature of the hot plate 30 drops due to natural heat dissipation until the time t24 when the off period is completed. After that, the power supply to the heating wire 31 is restarted, and the temperature of the hot plate 30 is adjusted to the second temperature T2. If the power supply to the heating wire 31 is stopped during the off period, the energy consumption is reduced by that amount (the above-mentioned reduced energy). On the other hand, additional energy is required to raise the temperature of the hot plate 30 again between the time t24 when the off period is completed and the time t25 when the temperature of the hot plate 30 recovers to the first temperature T1 (above). Increased energy). When the magnitude of the reduced energy exceeds the magnitude of the increased energy, the energy consumption is reduced accordingly.

[Effect of this embodiment]
As described above, the coating / developing device 2 has a hot plate 30 facing the wafer W, and the heat treatment device 20 for adjusting the temperature of the hot plate 30 to heat the wafer W and the hot plate 30. The heat treatment apparatus 20 so that the temperature is adjusted to the first temperature and the wafer W is subjected to the first heat treatment, and after the first heat treatment, the temperature of the hot plate 30 is adjusted to the second temperature and the wafer W is subjected to the second heat treatment. The heat treatment apparatus 20 is controlled so as to perform a temperature change process for changing the temperature of the hot plate 30 from the first temperature to the second temperature between the heat treatment control unit 111 for controlling the temperature and the first heat treatment and the second heat treatment. The temperature is increased so that the time from the completion time of the first heat treatment to the completion time of the temperature change process is lengthened according to the lengthening of the time between the temperature change control unit 112 and the first heat treatment and the second heat treatment. A change condition setting unit 113 for setting an execution condition of the temperature change process by the change control unit 112 is provided.

According to this coating / developing device 2, energy consumption in the temperature changing process can be reduced. For example, when the first heat energy held by the hot plate 30 at the first temperature is higher than the second heat energy held by the hot plate 30 at the second temperature, the temperature of the hot plate 30 is also the first temperature due to natural heat dissipation. Changes from to the second temperature. Therefore, by slowing down the temperature change rate in the temperature change process, it is possible to reduce the energy consumption for accelerating the temperature change. On the other hand, when the first heat energy is lower than the second heat energy, the start time of the temperature change process is delayed to prolong the time when the heat energy of the heat plate 30 is low, thereby suppressing energy consumption. Can be done. Therefore, it is effective in suppressing energy consumption for changing the heat treatment temperature of the wafer W.

The heat energy held by the hot plate 30 is the amount of heat released or absorbed when the hot plate 30 changes from the current temperature to the same temperature as the surroundings. Even when the first temperature is higher than the second temperature, the height of the first heat energy and the second heat energy depends on the relationship between the first temperature and the second temperature and the temperature around the hot plate 30. .. For example, when both the first temperature and the second temperature are higher than the temperature around the hot plate 30, the first heat energy is higher than the second heat energy. On the other hand, when both the first temperature and the second temperature are lower than the temperature around the heat plate 30, the second heat energy is higher than the first heat energy.

In the temperature range of the hot plate 30 assumed in the heat treatment of the wafer W, the higher the temperature, the higher the thermal energy tends to be. Therefore, when the second temperature is lower than the first temperature, the change condition setting unit 113 increases the temperature change speed in the temperature change process according to the lengthening of the time between the first heat treatment and the second heat treatment. The execution condition of the temperature change process may be set so as to slow down. In this case, the energy consumption for accelerating the temperature change can be reduced.

The heat treatment apparatus 20 further includes a cooling unit 60 that blows a cooling gas onto the hot plate 30, and the temperature change control unit 112 includes a cooling unit 60 in the temperature change process when the second temperature is lower than the first temperature. The heat treatment device 20 is controlled so as to blow a cooling gas onto the hot plate 30, and the change condition setting unit 113 performs a temperature change process according to the lengthening of the time between the first heat treatment and the second heat treatment. The execution condition of the temperature change process may be set so as to reduce the amount of the cooling gas blown in. In this case, the energy consumption for blowing the cooling gas can be reduced.

When the second temperature is higher than the first temperature, the change condition setting unit 113 changes the temperature from the completion time of the first heat treatment according to the lengthening of the time between the first heat treatment and the second heat treatment. The execution condition of the temperature change process may be set so as to lengthen the time until the start time of. In this case, the time when the heat energy of the hot plate 30 is low can be lengthened, whereby energy consumption can be suppressed.

When the time between the first heat treatment and the second heat treatment is shorter than the preset reference time, the change condition setting unit 113 does not stop the supply of energy for temperature control to the heat plate 30. If the time between the first heat treatment and the second heat treatment is longer than the reference time, the execution condition of the temperature change process is set so as to temporarily stop the supply of energy for temperature control to the hot plate 30. May be good.

By suspending the supply of the energy for temperature control, the energy consumption during the suspension period can be reduced (the reduced energy). On the other hand, if the supply of the energy for temperature control is temporarily stopped, the energy consumption may increase when the supply of the energy for temperature control is restarted (the increased energy). As the time between the first heat treatment and the second heat treatment becomes longer, the stop period can be lengthened and the energy reduction can be increased. Therefore, when the length of time between the first heat treatment and the second heat treatment exceeds a certain time, the reduced energy can be made larger than the increased energy. Therefore, according to the configuration in which the supply of energy for temperature control is temporarily stopped when the time between the first heat treatment and the second heat treatment is longer than the reference time, the energy consumption can be further reduced by adjusting the reference time. Can be done.

Although the embodiments have been described above, the present disclosure is not necessarily limited to the above-described embodiments, and various changes can be made without departing from the gist thereof. For example, the substrate to be processed is not limited to the semiconductor wafer, and may be, for example, a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like.

2 ... Coating / developing device (board processing device), 20 ... Heat treatment device (heat treatment section), 30 ... Hot plate (opposing section), 60 ... Cooling section, 111 ... Heat treatment control section, 112 ... Temperature change control section, 113 ... Change condition setting unit, W ... Wafer (board).

Claims (9)

A heat treatment unit having a facing portion facing the substrate and heat-treating the substrate by adjusting the temperature of the facing portion.
The temperature of the facing portion is adjusted to the first temperature to perform the first heat treatment on the substrate, and after the first heat treatment, the temperature of the facing portion is adjusted to the second temperature to perform the second heat treatment on the substrate. A heat treatment control unit that controls the heat treatment unit,
A temperature change control unit that controls the heat treatment unit so as to perform a temperature change process for changing the temperature of the facing portion from the first temperature to the second temperature between the first heat treatment and the second heat treatment. ,
The temperature change control so as to lengthen the time from the completion time of the first heat treatment to the completion time of the temperature change process according to the lengthening of the time between the first heat treatment and the second heat treatment. It is equipped with a change condition setting unit that sets the execution condition of the temperature change process by the unit .
When the second temperature is lower than the first temperature, the change condition setting unit sets the temperature in the temperature change process according to the lengthening of the time between the first heat treatment and the second heat treatment. A substrate processing apparatus that sets execution conditions for the temperature change processing so as to slow down the change speed . The heat treatment unit further includes a cooling unit that blows a cooling gas onto the facing portion.
When the second temperature is lower than the first temperature, the temperature change control unit controls the heat treatment unit so that the cooling unit blows a cooling gas to the facing portion in the temperature change process.
The change condition setting unit performs the temperature change process so as to reduce the amount of the cooling gas sprayed in the temperature change process according to the lengthening of the time between the first heat treatment and the second heat treatment. The board processing apparatus according to claim 1 , wherein the execution conditions of the above are set. When the second temperature is higher than the first temperature, the change condition setting unit completes the first heat treatment according to the lengthening of the time between the first heat treatment and the second heat treatment. The substrate processing apparatus according to claim 1 or 2 , wherein the execution conditions of the temperature change processing are set so as to lengthen the time from the time to the start time of the temperature change processing. When the time between the first heat treatment and the second heat treatment is shorter than the preset reference time, the change condition setting unit stops the supply of energy for temperature control to the facing portion. If the time between the first heat treatment and the second heat treatment is longer than the reference time, the temperature change process is performed so as to temporarily stop the supply of energy for temperature control to the facing portion. The substrate processing apparatus according to any one of claims 1 to 3 , which sets execution conditions. By adjusting the temperature of the facing part facing the substrate to the first temperature and performing the first heat treatment on the substrate,
After the first heat treatment, the temperature of the facing portion is adjusted to the second temperature to perform the second heat treatment on the substrate.
Between the first heat treatment and the second heat treatment, a temperature change process for changing the temperature of the facing portion from the first temperature to the second temperature is performed.
As the time between the first heat treatment and the second heat treatment becomes longer, the temperature change process is performed so as to increase the time from the completion time of the first heat treatment to the completion time of the temperature change process. Including setting execution conditions
When the second temperature is lower than the first temperature, the temperature change rate in the temperature change process is slowed down as the time between the first heat treatment and the second heat treatment becomes longer. A substrate processing method for setting execution conditions for the temperature change processing . When the second temperature is lower than the first temperature, a cooling gas is sprayed on the facing portion in the temperature change process.
As the time between the first heat treatment and the second heat treatment becomes longer, the execution conditions of the temperature change process are set so as to reduce the amount of the cooling gas sprayed in the temperature change process. The substrate processing method according to claim 5 . When the second temperature is higher than the first temperature, the time between the first heat treatment and the second heat treatment becomes longer, so that the temperature change process is performed from the completion time of the first heat treatment. The substrate processing method according to claim 5 or 6 , wherein the execution conditions of the temperature change processing are set so as to lengthen the time until the start time. When the time between the first heat treatment and the second heat treatment is shorter than the preset reference time, the supply of energy for temperature control to the facing portion is not stopped, and the first heat treatment is performed. When the time between the second heat treatment and the second heat treatment is longer than the reference time, the execution condition of the temperature change process is set so as to temporarily stop the supply of the energy for temperature control to the facing portion. The substrate processing method according to any one of claims 5 to 7 . A computer-readable storage medium in which a program for causing an apparatus to execute the substrate processing method according to any one of claims 5 to 8 is stored.

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