JP7084803B2 - Distance measurement sensor and time of flight sensor - Google Patents

Description

The present disclosure relates to a distance measuring sensor and a time of flight sensor.

In recent years, the development of a distance measuring sensor that acquires distance information with an object such as a ToF (Time of Flight) sensor has been progressing.

For example, a distance measuring sensor is configured as a sensor chip by arranging sensor elements in an array on one chip. In such a distance measuring sensor, since the distance information to the object can be acquired for each sensor element arranged in an array, the distance information to the object can be acquired as a distance image.

For example, in Patent Document 1 below, the distance information to the target is acquired by irradiating the target with light having a modulation period waveform and detecting a part of the light reflected by the target with a photodetector. The invention relating to the ToF sensor is disclosed.

Japanese Unexamined Patent Publication No. 2012-049547

Here, in the invention disclosed in Patent Document 1, no study has been made on the accuracy variation of the distance information acquired by each of the sensor elements arranged in an array.

However, in a distance measuring sensor in which sensor elements are arranged in an array, the incident characteristics of light from an object may differ depending on the geometrical position in the plane of the sensor chip. Therefore, it is difficult to acquire distance information with uniform accuracy in the chip surface with a distance measuring sensor in which sensor elements are arranged in an array.

Therefore, there has been a demand for a technique for further improving the in-plane uniformity of distance information acquired by sensor elements arranged in an array.

According to the present disclosure, a plurality of sensor elements in which a first storage unit and a second storage unit that recover electrons obtained by photoelectrically converting incident light are arranged in one direction are arranged in an array. A sensor array unit, a first control line extending in the arrangement direction of the first storage unit and the second storage unit, and electrically connected to each of the first storage units, the first storage unit and the first storage unit and the above. A second control line extending in the arrangement direction of the second storage unit and electrically connected to each of the second storage units, and the sensor array unit on the side facing the side where the first storage unit is arranged. It is provided on the peripheral edge of the first global control unit that controls the voltage applied to the first control line and the sensor array unit on the side facing the side where the second storage unit is arranged. Provided is a distance measuring sensor including a second global control unit that controls a voltage applied to the second control line.

Further, according to the present disclosure, by arranging a plurality of sensor elements in which a first storage unit and a second storage unit that recover electrons obtained by photoelectrically converting incident light in one direction are arranged in an array. A configured sensor array unit, a first control line extending in the arrangement direction of the first storage unit and the second storage unit, and electrically connected to each of the first storage units, and the first storage unit. A second control line extending in the arrangement direction of the second storage unit and electrically connected to each of the second storage units, and the sensor array on the side facing the side where the first storage unit is arranged. A first global control unit provided on the periphery of the unit to control the voltage applied to the first control line, and a sensor array unit on the side facing the side where the second storage unit is arranged are provided. A time-of-flight sensor is provided that comprises a second global control unit that controls the voltage applied to the second control line.

According to the present disclosure, the first storage is performed by controlling the applied voltage of each of the first storage unit and the second storage unit of the sensor element by using the voltage drop generated in the first control line and the second control line. It is possible to correct the electron recovery efficiency in the unit and the second storage unit.

As described above, according to the present disclosure, it is possible to further improve the in-plane uniformity of the distance information acquired by the sensor elements arranged in an array.

It should be noted that the above effects are not necessarily limited, and either along with or in place of the above effects, any of the effects shown herein, or any other effect that can be ascertained from this specification. May be played.

It is a schematic plan view which shows the schematic structure of the distance measuring sensor to which the technique which concerns on this disclosure is applied. It is a schematic plan view explaining the structure of the sensor element of a sensor array part. FIG. 3 is a schematic plan view showing one sensor element of FIG. 2 in an enlarged manner. It is a schematic vertical sectional view showing the two sensor elements of FIG. 2 in an enlarged manner. It is a schematic diagram which shows the incident angle of the incident light in each of the sensor elements arranged in the Y direction. It is a schematic graph which shows the relationship between the coordinates in the Y direction of a sensor element, and the electron recovery efficiency in the 1st storage part and the 2nd storage part of a sensor element. It is a schematic plan view which shows the structure of the distance measuring sensor which concerns on 1st Embodiment of this disclosure. It is a graph which shows schematically the influence on the 1st storage part and the 2nd storage part by the voltage drop of the 1st control line and the 2nd control line shown in FIG. 7. It is a schematic plan view which shows the structure of the distance measuring sensor which concerns on the 1st modification. It is a schematic plan view which shows the structure of the distance measuring sensor which concerns on the 2nd modification. It is a top view which shows the specific plane arrangement of the distance measuring sensor shown in FIG. 7 schematically. It is a top view which shows the specific plane arrangement of the distance measuring sensor shown in FIG. 9 schematically. It is a top view which shows the specific plane arrangement of the distance measuring sensor shown in FIG. 10 schematically. It is a perspective view which shows typically the structure of the distance measuring sensor of the 1st laminated arrangement. It is a top view which schematically showed the 1st laminated arrangement of the distance measuring sensor shown in FIG. 7. 9 is a plan view schematically showing the first stacked arrangement of the distance measuring sensors shown in FIG. 9. It is a top view which schematically showed the 1st laminated arrangement of the distance measuring sensor shown in FIG. It is a perspective view which shows typically the structure of the distance measuring sensor of the 2nd laminated arrangement. 9 is a plan view schematically showing a second stacked arrangement of the distance measuring sensors shown in FIG. 9. It is a perspective view which shows typically the structure of the distance measuring sensor of the 3rd laminated arrangement. It is a top view which schematically showed the 3rd stacking arrangement of a distance measuring sensor. It is a schematic diagram which shows the incident angle of the incident light in each of the sensor elements arranged in the Y direction in the distance measuring sensor which concerns on the 2nd Embodiment of this disclosure. It is a top view which shows the specific example of the distance measuring sensor which concerns on 2nd Embodiment of this disclosure schematically. It is a top view which shows the specific example of the distance measuring sensor which concerns on 2nd Embodiment of this disclosure schematically. It is a top view which shows the specific example of the distance measuring sensor which concerns on 2nd Embodiment of this disclosure schematically. It is a top view which shows the specific example of the distance measuring sensor which concerns on 2nd Embodiment of this disclosure schematically. It is a top view which shows the specific example of the distance measuring sensor which concerns on 3rd Embodiment of this disclosure schematically. It is a top view which shows the specific example of the distance measuring sensor which concerns on 3rd Embodiment of this disclosure schematically. It is a top view which shows the specific example of the distance measuring sensor which concerns on 3rd Embodiment of this disclosure schematically. It is a top view which shows the specific example of the distance measuring sensor which concerns on 3rd Embodiment of this disclosure schematically.

Preferred embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In the present specification and the drawings, components having substantially the same functional configuration are designated by the same reference numerals, so that duplicate description will be omitted.

In each drawing referred to in the following description, the sizes of some constituent members may be exaggerated for convenience of explanation. Therefore, the relative sizes of the constituent members shown in the drawings do not necessarily accurately represent the magnitude relationship between the actual constituent members.

The explanations will be given in the following order.
0. Overview of range sensor 1. First Embodiment 1.1. Configuration of distance measurement sensor 1.2. Specific example of distance measurement sensor 2. Second embodiment 2.1. Configuration of distance measurement sensor 2.2. Specific example of distance measurement sensor 3. Third embodiment

<0. Overview of ranging sensor>
With reference to FIGS. 1 and 2, an outline of a distance measuring sensor to which the technique according to the present disclosure is applied will be described. FIG. 1 is a schematic plan view showing a schematic configuration of a distance measuring sensor to which the technique according to the present disclosure is applied.

As shown in FIG. 1, the distance measuring sensor 11 includes a sensor array unit 12, a global control unit 13, a rolling control unit 14, a column ADC (Analog to Digital Converter) 15, and an input / output unit 16. .. The distance measuring sensor 11 is configured by providing these sensor array units 12, a global control unit 13, a rolling control unit 14, a column ADC 15, and an input / output unit 16 on one chip. The distance measuring sensor 11 may be, for example, a ToF (Time of Flight) sensor.

In the following, the X-axis is defined in the direction in which the sensor array unit 12 and the rolling control unit 14 are arranged, and the Y-axis is defined in the direction in which the sensor array unit 12 and the global control unit 13 are arranged in FIG. Further, the directions on the side where the global control unit 13 and the rolling control unit 14 are provided are defined as positive directions, respectively. For example, the X-axis direction from the sensor array unit 12 to the rolling control unit 14 is also referred to as an X direction, and the Y-axis direction from the sensor array unit 12 to the global control unit 13 is also referred to as a Y direction.

The sensor array unit 12 is a rectangular region in which sensor elements for acquiring information regarding a distance to an object are arranged in an array. For example, the sensor array unit 12 may be arranged with sensor elements that measure distance information from an object by using the phase difference due to pupil division.

The global control unit 13 outputs a global control signal for driving a plurality of sensor elements arranged in the sensor array unit 12 all at once (simultaneously) at substantially the same timing. For example, in FIG. 1, the global control unit 13 is provided so as to extend in the X direction along one side of the rectangular shape of the sensor array unit 12.

Further, a control line 21 for supplying a global control signal to each of the sensor elements arranged in the sensor array unit 12 is extended from the global control unit 13. Specifically, the control line 21 is extended and arranged in the Y direction orthogonal to the X direction in which the global control unit 13 extends, and supplies a global control signal to the sensor elements arranged in the sensor array unit 12. .. For example, the control line 21 may supply a global control signal for each row (for each group in the Y direction) to the sensor elements arranged in a matrix.

The rolling control unit 14 outputs a rolling control signal for sequentially (sequentially) driving the sensor elements arranged in the sensor array unit 12. For example, in FIG. 1, the rolling control unit 14 is provided so as to extend in the Y direction along one side of the rectangular shape of the sensor array unit 12. The rolling control unit 14 may output a rolling control signal for driving the sensor elements arranged in a matrix in order for each row (for each group in the X direction).

Since the global control unit 13 simultaneously controls the drive of the sensor elements arranged in the sensor array unit 12, the range measuring sensor 11 is used, for example, for the drive control of the sensor element that acquires the distance information to the object. obtain. In particular, when the distance measuring sensor 11 is a ToF sensor, each of the sensor elements of the sensor array unit 12 is controlled to be driven at high speed during exposure. Such drive control of the sensor element can be performed by the global control unit 13 that drives the sensor elements all at once at substantially the same timing.

Since the rolling control unit 14 controls driving while sequentially scanning the sensor elements arranged in the sensor array unit 12, the distance measuring sensor 11 is used, for example, for driving control of the sensor element that acquires image information of an object. Can be.

The column ADC 15 performs AD conversion in parallel with the sensor signals output from each of the sensor elements of the sensor array unit 12. Specifically, the column ADC 15 converts the sensor signals output from each of the sensor elements arranged in a matrix from an analog signal to a digital signal for each column (in a group in the X direction).

The input / output unit 16 includes a terminal for input / output between the distance measuring sensor 11 and the external circuit. For example, the input / output unit 16 may input the electric power required for driving the global control unit 13 from an external circuit. Further, the input / output unit 16 may output a sensor signal output from each of the sensor elements of the sensor array unit 12 to an external circuit.

Subsequently, a specific configuration of the sensor array unit 12 of the distance measuring sensor 11 will be described with reference to FIGS. 2 to 4. FIG. 2 is a schematic plan view illustrating the configuration of the sensor element 120 of the sensor array unit 12. 3 is a schematic plan view showing an enlarged view of one sensor element of FIG. 2, and FIG. 4 is a schematic vertical sectional view showing an enlarged view of the two sensor elements of FIG. 2. ..

As shown in FIG. 2, the sensor array unit 12 is configured by arranging rectangular sensor elements 120 in a matrix in the X direction and the Y direction. The sensor element 120 includes a first storage unit 121 and a second storage unit arranged in the Y direction, respectively. The first storage unit 121 and the second storage unit 122 store and recover the electrons generated by the sensor element 120.

Specifically, as shown in FIG. 3, in the sensor element 120, the photoelectric conversion unit 210 is provided on the first storage unit 121 and the second storage unit 122, and the optical black 312 is provided on the photoelectric conversion unit 210. An optical adjustment layer 311 including the microlens 320 is provided. For example, the sensor element 120 may be provided with a back-illuminated structure.

The photoelectric conversion unit 210 is a photodiode, and n-type impurities (for example, phosphorus (P) or phosphorus (P) or It is composed of surrounding an n-type semiconductor region in which arsenic (As) is introduced. The photoelectric conversion unit 210 photoelectrically converts the light incident on the microlens 320. The photoelectrically converted electrons are collected by either the first storage unit 121 or the second storage unit 122.

The optical adjustment layer 311 includes the optical black 312 and adjusts the light incident on the photoelectric conversion unit 210. Specifically, the optical adjustment layer 311 may prevent stray light from being incident on the adjacent sensor element 120 by the optical black 312 formed of a light-shielding material such as chromium (Cr) or carbon (C). good. Further, the optical adjustment layer 311 may include a color filter, and the wavelength of the light incident on the photoelectric conversion unit 210 may be controlled by the color filter.

One microlens 320 is provided for the first storage unit 121 and the second storage unit 122. The microlens 320 collects the light incident on the sensor element 120, and the amount of electrons collected by each of the first storage unit 121 and the second storage unit 122 by pupil division is determined according to the distance to the object. Change. Therefore, in the sensor element 120, the distance to the object can be measured by comparing the amount of electrons recovered by each of the first storage unit 121 and the second storage unit 122.

Further, as shown in FIG. 4, the first control line 211 and the second control line 212 extending from the global control unit 13 are electrically connected to the first storage unit 121 and the second storage unit 122, respectively.

The first control line 211 is provided so as to extend in the Y direction, and is electrically connected to each first storage unit 121 of the sensor element 120 for each row. The second control line 212 is similarly extended in the Y direction and is electrically connected to each second storage unit 122 of the sensor element 120 for each row.

The first control line 211 and the second control line 212 alternately apply high potentials or low potentials to the first storage unit 121 and the second storage unit 122. Specifically, when the first control line 211 is applied to the first storage unit 121 at a high potential, the second control line 212 has a potential lower than the potential applied to the first storage unit 121 by the first control line 211. Is applied to the second storage unit 122. Further, when the first control line 211 is applied to the first storage unit 121 at a low potential, the second control line 212 has a second potential higher than the potential applied to the first storage unit 121 by the first control line 211. It is applied to the storage unit 122. By alternately performing such control of the applied voltage, the first control line 211 and the second storage unit 122 transfer the electrons photoelectrically converted by the photoelectric conversion unit 210 into the first storage unit 121 and the second storage unit. It can be recovered alternately from each of 122. Therefore, the sensor element 120 can measure the distance to the object by comparing the amount of electrons recovered by the first storage unit 121 and the second storage unit 122, respectively.

Here, since the first storage unit 121 and the second storage unit 122 are arranged side by side in a fixed direction (Y direction in FIG. 2), the electrons may be charged depending on the incident angle of the light incident on the photoelectric conversion unit 210. There may be a bias in recovery efficiency. Such a situation will be described with reference to FIGS. 5 and 6. FIG. 5 is a schematic diagram showing the incident angle of the incident light in each of the sensor elements 120 arranged in the Y direction. FIG. 6 is a schematic graph showing the relationship between the coordinates of the sensor element 120 in the Y direction and the electron recovery efficiency of the first storage unit 121 and the second storage unit 122 of the sensor element 120.

As shown in FIG. 5, for example, in the sensor element 120B provided near the center of the sensor array unit 12, the incident light is incident substantially perpendicular to the chip surface of the chip on which the distance measuring sensor 11 is provided. .. Therefore, in the sensor element 120B, light is similarly incident on the photoelectric conversion unit 210 on the second storage unit 122 side and the photoelectric conversion unit 210 on the first storage unit 121 side.

On the other hand, in the sensor element 120A provided on the upper side side (the positive direction side of the Y axis) of the sensor array unit 12, the incident light is incident from the center side of the sensor array unit 12 toward the upper side side. Therefore, in the sensor element 120A, light is more likely to be incident on the photoelectric conversion unit 210 on the first storage unit 121 side than on the photoelectric conversion unit 210 on the second storage unit 122 side. Further, in the sensor element 120C provided on the lower side (origin side of the Y axis) of the sensor array unit 12, the incident light is incident from the center side of the sensor array unit 12 toward the lower side. Therefore, in the sensor element 120C, light is more likely to be incident on the photoelectric conversion unit 210 on the second storage unit 122 side than on the photoelectric conversion unit 210 on the first storage unit 121 side.

When the incident light is unevenly incident on either the photoelectric conversion unit 210 on the first storage unit 121 side or the second storage unit 122 side, the generation position of the electrons obtained by photoelectrically converting the incident light is also on the first storage unit 121 side or the first storage unit 121. 2 It will be biased to either side of the storage unit 122. In such a case, the electron recovery efficiency of the first storage unit 121 and the second storage unit 122 will not be uniform.

Specifically, as shown in FIG. 6, in the sensor element 120A on the upper side of the sensor array unit 12, the electron recovery efficiency of the first storage unit 121 is higher than the electron recovery efficiency of the second storage unit 122. It will be expensive. On the other hand, in the sensor element 120C on the lower side of the sensor array unit 12, the electron recovery efficiency of the second storage unit 122 is higher than the electron recovery efficiency of the first storage unit 121.

That is, in the sensor element 120, the incident center of the incident light changes depending on the position of the sensor array unit 12 in the Y direction (that is, the arrangement direction of the first storage unit 121 and the second storage unit 122), so that the first storage unit The electron recovery efficiency in 121 and the second storage unit 122 changes. The accuracy of the distance information measured by the sensor element 120 correlates with the electron recovery efficiency of each of the first storage unit 121 and the second storage unit 122. Therefore, when the electron recovery efficiency in the first storage unit 121 and the second storage unit 122 is different in each of the sensor elements 120, the accuracy variation in the plane of the distance information measured by the sensor array unit 12 becomes large. It ends up.

The technique according to the present disclosure was conceived in view of the above circumstances. The technique according to the present disclosure suppresses in-plane accuracy variation of distance information measured by each of the sensor elements 120 of the sensor array unit 12. Hereinafter, the techniques according to the present disclosure will be described separately for the first to third embodiments.

<1. First Embodiment>
(1.1. Configuration of distance measurement sensor)
First, the configuration of the distance measuring sensor according to the first embodiment of the present disclosure will be described with reference to FIGS. 7 to 10. FIG. 7 is a schematic plan view showing the configuration of the distance measuring sensor according to the present embodiment. FIG. 8 is a graph schematically showing the influence of the voltage drop of the first control line 211 and the second control line 212 shown in FIG. 7 on the first storage unit 121 and the second storage unit 122.

As shown in FIG. 7, in the distance measuring sensor according to the present embodiment, the first global control unit 131 that outputs the global control signal to the first control line 211 and the second global control signal that outputs the global control signal to the second control line 212. 2 The global control unit 132 is provided. Only the first control line 211 that supplies the global control signal to the first storage unit 121 is extended from the first global control unit 131, and the global control signal is supplied from the second global control unit 132 to the second storage unit 122. Only the second control line 212 is stretched.

The first global control unit 131 and the second global control unit 132 are provided so as to face each other in the arrangement direction of the first storage unit 121 and the second storage unit 122. Specifically, the first global control unit 131 is provided on the side facing the side where the first storage unit 121 is arranged (that is, the lower side of the sensor array unit 12), and the second global control unit 132 is provided. The second storage unit 122 is provided on the side facing the side where the second storage unit 122 is arranged (that is, the upper side of the sensor array unit 12).

The first control line 211 and the second control line 212 extend from the first global control unit 131 and the second global control unit 132, respectively, in a comb-teeth shape. The first control line 211 and the second control line 212 are provided alternately in the X direction and are provided so as to mesh with each other in a comb tooth shape.

In the distance measuring sensor according to the present embodiment, in order to suppress in-plane accuracy variation of the distance information of the sensor array unit 12, the first control electrically connected to the first storage unit 121 and the second storage unit 122. The wiring direction of the line 211 and the second control line 212 is controlled.

Specifically, in the first control line 211 and the second control line 212, the magnitude of the resistance of the first storage unit 121 and the second storage unit 122 connected to the first control line 211 and the second control line 212, and A voltage drop (also referred to as IR drop) occurs based on the magnitude of the current flowing through the first control line 211 and the second control line 212. Since the electron recovery efficiency in the first storage unit 121 and the second storage unit 122 correlates with the magnitude of the voltage applied to the first storage unit 121 and the second storage unit 122, the distance measuring sensor causes a voltage drop. By using it, it is possible to control the electron recovery efficiency in each of the sensor elements 120.

For example, as shown in FIG. 7, in the sensor array unit 12, the first control line 211 is wired in the Y direction from the first global control unit 131 provided along the lower side of the sensor array unit 12, and the sensor array unit 12 The second control line 212 is wired in the Y direction from the second global control unit 132 provided along the upper side.

In such a case, in the first storage unit 121 on the terminal side (that is, the upper side side of the sensor array unit 12) of the first control line 211, the applied voltage decreases due to the voltage drop, so that the electron recovery efficiency decreases. Further, in the second storage unit 122 on the terminal side (that is, the lower side side of the sensor array unit 12) of the second control line 212, the applied voltage decreases due to the voltage drop, so that the electron recovery efficiency decreases.

That is, as shown in FIG. 8, due to the voltage drop of the first control line 211 and the second control line 212, the electron recovery efficiency of the first storage unit 121 is low in the sensor element 120 on the upper side of the sensor array unit 12. Moreover, the electron recovery efficiency of the second storage unit 122 is increased. On the other hand, in the sensor element 120 on the lower side of the sensor array unit 12, the electron recovery efficiency of the second storage unit 122 is low, and the electron recovery efficiency of the first storage unit 121 is high.

In the distance measuring sensor according to the present embodiment, the difference in electron recovery efficiency between the first storage unit 121 and the second storage unit 122 due to the voltage drop is used, and the first is caused by the arrangement of the sensor element 120 shown in FIG. The difference in electron recovery efficiency between the storage unit 121 and the second storage unit 122 can be offset. According to this, in the distance measuring sensor according to the present embodiment, it is possible to suppress in-plane accuracy variation of the distance information measured by each of the sensor elements 120 of the sensor array unit 12.

As described above, in order to offset the difference in electron recovery efficiency due to the arrangement of the sensor element 120 due to the difference in electron recovery efficiency due to the voltage drop, the first global control unit 131 and the second global control It is important to provide the unit 132 on the side facing the first storage unit 121 and the second storage unit 122. Specifically, the first global control unit 131 is provided on the side facing the side where the first storage unit 121 is arranged, and the second global control unit 132 is provided on the side facing the side where the second storage unit 122 is arranged. It is important to provide it in.

Therefore, for example, when the first storage unit 121 and the second storage unit 122 are arranged in the Y direction and the first storage unit 121 is provided on the left side of the sensor array unit 12, the first global control unit 131 may be used. The second global control unit 132 is provided along the right side of the sensor array unit 12, and the second global control unit 132 is provided along the left side of the sensor array unit 12.

Subsequently, a modified example of the distance measuring sensor according to the present embodiment will be described with reference to FIGS. 9 and 10. FIG. 9 is a schematic plan view showing the configuration of the distance measuring sensor according to the first modification. FIG. 10 is a schematic plan view showing the configuration of the distance measuring sensor according to the second modification.

(First modification)
As shown in FIG. 9, in the distance measuring sensor according to the first modification, a plurality of global control units 133 and 134 are provided, and control lines 213 and 214 are extended from each of the global control units 133 and 134. A control line 213 that supplies a global control signal to the first storage unit 121 and the second storage unit 122 of some sensor elements 120 is extended from the global control unit 133, and the remaining sensor elements are extended from the global control unit 134. A control line 214 for supplying a global control signal to the first storage unit 121 and the second storage unit 122 of 120 is extended.

The plurality of global control units 133 and 133 are provided so as to face each other. For example, in FIG. 9, the global control unit 133 is provided on the upper side of the sensor array unit 12, and the global control unit 134 is provided on the lower side of the sensor array unit 12.

The control lines 213 and 214 extend from the global control units 133 and 134 to approximately the center of the sensor array unit 12, respectively. That is, the global control unit 133 supplies the global control signal to the first storage unit 121 and the second storage unit 122 of the sensor element 120 in the upper half of the sensor array unit 12 by the control line 213. On the other hand, the global control unit 134 supplies a global control signal to the first storage unit 121 and the second storage unit 122 of the sensor element 120 in the lower half of the sensor array unit 12 by the control line 214.

In the distance measuring sensor according to the first modification, the number of sensor elements 120 that supply global control signals from each of the global control units 133 and 134 is substantially halved. Therefore, in the control lines 213 and 213 extending from the global control units 133 and 134, the number of connected resistance sources (first storage unit 121 and second storage unit 122) is substantially halved, so that the voltage drop that occurs occurs. The degree can be suppressed. According to this, in the distance measuring sensor according to the first modification, it is possible to suppress a decrease in electron recovery efficiency in each of the sensor elements 120 due to the voltage drop of the control lines 213 and 214.

(Second modification)
As shown in FIG. 10, in the distance measuring sensor according to the second modification, a plurality of global control units 135 and 136 are provided, and control lines 215 and 216 are extended from each of the global control units 135 and 136. A control line 215 that supplies a global control signal to the first storage unit 121 and the second storage unit 122 of some sensor elements 120 is extended from the global control unit 135, and the remaining sensor elements are extended from the global control unit 136. A control line 214 for supplying a global control signal to the first storage unit 121 and the second storage unit 122 of 120 is extended.

The plurality of global control units 135 and 136 are provided along the sides of the sensor array unit 12 adjacent to each other. For example, in FIG. 10, the global control unit 135 is provided on the left side of the sensor array unit 12, and the global control unit 136 is provided on the lower side of the sensor array unit 12.

The control lines 215 and 216 extend from the global control units 135 and 136 in directions orthogonal to each other. The control lines 215 and 216 alternately supply global control signals to the first storage unit 121 and the second storage unit 122 of the sensor element 120 arranged in the sensor array unit 12. Specifically, the control lines 215 and 216 are globally connected to the first storage unit 121 and the second storage unit 122 of the sensor elements 120 alternately arranged in both rows and columns of the sensor elements 120 arranged in a matrix. A control signal may be supplied.

In the distance measuring sensor according to the second modification, the number of sensor elements 120 that supply global control signals from each of the global control units 135 and 136 is substantially halved. Therefore, in the control lines 215 and 216 extending from the global control units 135 and 136, the number of connected resistance sources (first storage unit 121 and second storage unit 122) is substantially halved, so that the voltage drop that occurs occurs. The degree can be suppressed.

Further, in the distance measuring sensor according to the second modification, since the control lines 215 and 216 are extended in the directions orthogonal to each other, the direction in which the voltage drop is generated by the control lines 215 and 216 is orthogonal to each other. can do. According to this, in the distance measuring sensor according to the second modification, the anisotropy of the electron recovery efficiency in each of the sensor elements 120 due to the voltage drop of the control lines 215 and 216 can be reduced.

Therefore, in the distance measuring sensor according to the second modification, it is possible to suppress a decrease in electron recovery efficiency in each of the sensor elements 120 due to the voltage drop of the control lines 215 and 216.

(1.2. Specific example of distance measuring sensor)
Subsequently, a specific example of the distance measuring sensor according to the present embodiment will be described with reference to FIGS. 11A to 17.

First, a specific example of the distance measuring sensor according to the present embodiment in the case of a plane arrangement will be described with reference to FIGS. 11A to 11C. FIG. 11A is a plan view schematically showing a specific planar arrangement of the distance measuring sensor shown in FIG. 7. FIG. 11B is a plan view schematically showing a specific planar arrangement of the distance measuring sensor shown in FIG. FIG. 11C is a plan view schematically showing a specific planar arrangement of the distance measuring sensor shown in FIG.

The distance measuring sensor shown in FIG. 7 can be formed on one chip by providing each configuration in a planar arrangement as shown in FIG. 11A.

As shown in FIG. 11A, the distance measuring sensor includes a sensor array unit 12, a first global control unit 131, a second global control unit 132, a rolling control unit 14, a column ADC 15, an input / output unit 16, and the like. To prepare for. Since the functions of each configuration are as described above, the description thereof is omitted here.

As shown in FIG. 11A, the first global control unit 131 is provided along the lower side of the rectangular sensor array unit 12, and the second global control unit 132 is provided along the upper side of the sensor array unit 12. From the first global control unit 131 and the second global control unit 132, the first control line 211 and the second control line 212 are provided so as to extend in a comb-teeth shape toward the sides facing each other.

Further, the rolling control unit 14 is provided along the right side of the sensor array unit 12. Further, the input / output unit 16 extends in the same direction as the second global control unit 132, and is provided on the outer peripheral side of the distance measuring sensor with respect to the second global control unit 132, and the column ADC is the first global control unit. It extends in the same direction as the 131 and is provided on the outer peripheral side of the distance measuring sensor with respect to the first global control unit 131.

The distance measuring sensor shown in FIG. 9 can be formed on one chip by providing each configuration in a planar arrangement as shown in FIG. 11B.

As shown in FIG. 11B, the distance measuring sensor includes a sensor array unit 12, a plurality of global control units 133 and 134, a rolling control unit 14, a column ADC 15, and an input / output unit 16. Since the functions of each configuration are as described above, the description thereof is omitted here.

As shown in FIG. 11B, the global control unit 133 is provided along the lower side of the rectangular sensor array unit 12, and the global control unit 134 is provided along the upper side of the sensor array unit 12. From the global control units 133 and 134, control lines 213 and 214 are provided extending from the global control units 133 and 134 to the vicinity of the center of the sensor array unit 12 toward the sides facing each other. The control lines 213 and 214 supply global control signals to the first storage unit 121 and the second storage unit 122 of different sensor elements 120, respectively. Specifically, the control line 213 supplies a global control signal to the first storage unit 121 and the second storage unit 122 of the sensor element 120 in the upper half region of the sensor array unit 12, and the control line 214 is used. A global control signal is supplied to the first storage unit 121 and the second storage unit 122 of the sensor element 120 in the lower half region of the sensor array unit 12.

Further, the rolling control unit 14 is provided along the right side of the sensor array unit 12. Further, the input / output unit 16 extends in the same direction as the global control unit 133 and is provided on the outer peripheral side of the distance measuring sensor with respect to the global control unit 133, and the column ADC is provided in the same direction as the global control unit 134. It is stretched and provided on the outer peripheral side of the distance measuring sensor with respect to the global control unit 134.

The distance measuring sensor shown in FIG. 10 can be formed on one chip by providing each configuration in a planar arrangement as shown in FIG. 11C.

As shown in FIG. 11C, the distance measuring sensor includes a sensor array unit 12, a plurality of global control units 135 and 136, a rolling control unit 14, a column ADC 15, and an input / output unit 16. Since the functions of each configuration are as described above, the description thereof is omitted here.

As shown in FIG. 11C, the global control unit 135 is provided along the left side of the rectangular sensor array unit 12, and the global control unit 136 is provided along the lower side of the sensor array unit 12. From the global control units 135 and 136, control lines 213 and 214 are provided so as to extend in directions orthogonal to each other. The control lines 215 and 216 supply global control signals to the first storage unit 121 and the second storage unit 122 of the different sensor elements 120, respectively. Specifically, the control lines 215 and 216 are globally controlled with respect to the first storage unit 121 and the second storage unit 122 of the sensor elements 120 arranged alternately in the row direction and the column direction of the sensor array unit 12, respectively. Supply a signal.

Further, the rolling control unit 14 is provided along the right side of the sensor array unit 12. Further, the input / output unit 16 is provided along the upper side of the sensor array unit 12. The column ADC extends in the same direction as the global control unit 136, and is provided on the outer peripheral side of the distance measuring sensor with respect to the global control unit 136.

Next, a specific example of the distance measuring sensor according to the present embodiment in the case of the first laminated arrangement will be described with reference to FIGS. 12 to 13C. FIG. 12 is a perspective view schematically showing the configuration of the distance measuring sensor in the first stacked arrangement. FIG. 13A is a plan view schematically showing the first stacked arrangement of the distance measuring sensors shown in FIG. 7. FIG. 13B is a plan view schematically showing the first stacked arrangement of the distance measuring sensors shown in FIG. 9. FIG. 13C is a plan view schematically showing the first stacked arrangement of the distance measuring sensors shown in FIG.

As shown in FIG. 12, the distance measuring sensor in the first stacked arrangement has a structure in which the sensor chip 51 on which the sensor array unit 12 is formed and the logic chip 52 on which the global control unit 13 is formed are laminated. .. The control line 21 that supplies a global control signal to each of the sensor elements 120 arranged in the sensor array unit 12 is a global formed in the logic chip 52 by the chip-to-chip connection structure provided in the external region of the sensor array unit 12. It is electrically connected to the control unit 13. The chip-to-chip connection structure may be, for example, a through electrode formed between chips or a joint structure between electrodes (Cu-Cu connection or microbumps).

The distance measuring sensor shown in FIG. 7 can be formed over a plurality of chips by providing each configuration in a stacked arrangement as shown in FIG. 13A.

As shown in FIG. 13A, the sensor chip 51 is provided with a sensor array unit 12 and TSV regions 531, 532, 533, and the logic chip 52 has a first global control unit 131 and a second global control. A unit 132, a rolling control unit 14, a column ADC 15, a logic circuit 17, and TSV regions 541, 542, and 543 are provided. Since the functions of each configuration are as described above, the description thereof is omitted here.

For example, the signal output from the sensor element 120 of the sensor array unit 12 is AD-converted by the column ADC 15, various signal processes are performed by the logic circuit 17, and then the signal is output to an external circuit or the like. The TSV regions 531, 532, 533 and the TSV regions 541, 542, 543 are regions in which a chip-to-chip connection structure for electrically connecting the sensor chip 51 and the logic chip 52 is formed. Through electrodes may be provided in the TSV regions 531, 532, 533 and the TSV regions 541, 542, 543, for example.

According to this, the first global control unit 131 is electrically connected to the first control line 211 via the TSV regions 533 and 543, and the second global control unit 132 is electrically connected to the first control line 211 via the TSV regions 531 and 541. , Can be electrically connected to the second control line 212. Further, the rolling control unit 14 can be electrically connected to each of the sensor elements 120 of the sensor array unit 12 via the TSV regions 532 and 542.

The TSV regions 531, 532, and 533 are provided on the outer peripheral side of the sensor chip 51, and the TSV regions 541, 542, and 543 are provided on the outer peripheral side of the logic chip 52 so as to correspond to the TSV regions 531, 532, and 533. .. The first global control unit 131, the second global control unit 132, and the rolling control unit 14 may be provided on the inner peripheral side of the TSV regions 541, 542, and 543, respectively. The logic circuit 17 and the column ADC 15 may be provided on the inner peripheral side of the first global control unit 131, the second global control unit 132, and the rolling control unit 14.

The distance measuring sensor shown in FIG. 9 can be formed over a plurality of chips by providing each configuration in a stacked arrangement as shown in FIG. 13B.

As shown in FIG. 13B, the sensor chip 51 is provided with a sensor array unit 12 and TSV regions 531, 532, 533, and the logic chip 52 is provided with global control units 133, 134 and a rolling control unit 14. A column ADC 15, a logic circuit 17, and TSV regions 541, 542, and 543 are provided. Since the functions of each configuration are as described above, the description thereof is omitted here.

For example, the signal output from the sensor element 120 of the sensor array unit 12 is AD-converted by the column ADC 15, various signal processes are performed by the logic circuit 17, and then the signal is output to an external circuit or the like. The TSV regions 531, 532, 533 and the TSV regions 541, 542, 543 are regions in which a chip-to-chip connection structure for electrically connecting the sensor chip 51 and the logic chip 52 is formed. Through electrodes may be provided in the TSV regions 531, 532, 533 and the TSV regions 541, 542, 543, for example.

According to this, the global control unit 133 is electrically connected to the control line 213 via the TSV regions 531 and 541, and the global control unit 134 is electrically connected to the control line 214 via the TSV regions 533 and 543. Can be connected. Further, the rolling control unit 14 can be electrically connected to each of the sensor elements 120 of the sensor array unit 12 via the TSV regions 532 and 542.

The TSV regions 531, 532, and 533 are provided on the outer peripheral side of the sensor chip 51, and the TSV regions 541, 542, and 543 are provided on the outer peripheral side of the logic chip 52 so as to correspond to the TSV regions 531, 532, and 533. .. The global control unit 133, 134 and the rolling control unit 14 may be provided on the inner peripheral side of the TSV regions 541, 542, and 543, respectively. The logic circuit 17 and the column ADC 15 may be provided on the inner peripheral side of the global control units 133 and 134 and the rolling control unit 14.

The distance measuring sensor shown in FIG. 10 can be formed over a plurality of chips by providing each configuration in a stacked arrangement as shown in FIG. 13C.

As shown in FIG. 13C, the sensor chip 51 is provided with a sensor array unit 12 and TSV regions 531, 532, 533, and the logic chip 52 has global control units 135, 136 and rolling control units 14. A column ADC 15, a logic circuit 17, and TSV regions 541, 542, and 543 are provided. Since the functions of each configuration are as described above, the description thereof is omitted here.

For example, the signal output from the sensor element 120 of the sensor array unit 12 is AD-converted by the column ADC 15, various signal processes are performed by the logic circuit 17, and then the signal is output to an external circuit or the like. The TSV regions 531, 532, 533 and the TSV regions 541, 542, 543 are regions in which a chip-to-chip connection structure for electrically connecting the sensor chip 51 and the logic chip 52 is formed. Through electrodes may be provided in the TSV regions 531, 532, 533 and the TSV regions 541, 542, 543, for example.

According to this, the global control unit 135 is electrically connected to the control line 215 via the TSV regions 531 and 541, and the global control unit 136 is electrically connected to the control line 216 via the TSV regions 532 and 542. Can be connected. Further, the rolling control unit 14 can be electrically connected to each of the sensor elements 120 of the sensor array unit 12 via the TSV regions 533 and 543.

The TSV regions 531, 532, and 533 are provided on the outer peripheral side of the sensor chip 51, and the TSV regions 541, 542, and 543 are provided on the outer peripheral side of the logic chip 52 so as to correspond to the TSV regions 531, 532, and 533. .. The global control unit 135, 136 and the rolling control unit 14 may be provided on the inner peripheral side of the TSV regions 541, 542, and 543, respectively. The logic circuit 17 may be provided on the inner peripheral side of the global control unit 135 and the rolling control unit 14, and the column ADC 15 may be provided on the inner peripheral side of the global control unit 136.

Next, a specific example of the distance measuring sensor according to the present embodiment in the case of the second laminated arrangement will be described with reference to FIGS. 14 to 15. FIG. 14 is a perspective view schematically showing the configuration of the distance measuring sensor in the second stacked arrangement. FIG. 15 is a plan view schematically showing the second laminated arrangement of the distance measuring sensors shown in FIG.

As shown in FIG. 14, the distance measuring sensor in the second stacked arrangement has a structure in which the sensor chip 51 on which the sensor array unit 12 is formed and the logic chip 52 on which the global control unit 13 is formed are laminated. .. The control line 21 that supplies a global control signal to each of the sensor elements 120 arranged in the sensor array unit 12 is a global formed in the logic chip 52 by an interchip connection structure provided near the center of the sensor array unit 12. It is electrically connected to the control unit 13. The chip-to-chip connection structure may be, for example, a through electrode formed between chips or a joint structure between electrodes (Cu-Cu connection or microbumps). The chip-to-chip connection structure can be formed inside the sensor array unit 12 depending on the size of the structure or the forming method.

The distance measuring sensor shown in FIG. 9 can be formed over a plurality of chips by providing each configuration in a laminated arrangement as shown in FIG.

As shown in FIG. 15, the sensor chip 51 is provided with a sensor array unit 12 and TSV regions 531 and 532, and the logic chip 52 is provided with global control units 133 and 134 and a rolling control unit 14. A column ADC 15, a logic circuit 17, and TSV regions 541 and 542 are provided. Since the functions of each configuration are as described above, the description thereof is omitted here.

For example, the signal output from the sensor element 120 of the sensor array unit 12 is AD-converted by the column ADC 15, various signal processes are performed by the logic circuit 17, and then the signal is output to an external circuit or the like. The TSV regions 531 and 532 and the TSV regions 541 and 542 are regions in which a chip-to-chip connection structure for electrically connecting the sensor chip 51 and the logic chip 52 is formed. Through electrodes may be provided in the TSV regions 531 and 532 and the TSV regions 541 and 542, for example.

The global control unit 133 is electrically connected to the control line 213 via an interchip connection structure formed inside the sensor array unit 12, and the global control unit 134 is formed inside the sensor array unit 12. It can be electrically connected to the control line 214 via the chip-to-chip connection structure. Further, the rolling control unit 14 is electrically connected to each of the sensor elements 120 of the sensor array unit 12 via the TSV regions 531 and 541, and the column ADC 15 is connected to the sensor array unit via the TSV regions 532 and 542. It can be electrically connected to each of the 12 sensor elements 120.

The TSV regions 531 and 532 are provided on the outer peripheral side of the sensor chip 51, and the TSV regions 541 and 542 are provided on the outer peripheral side of the logic chip 52 so as to correspond to the TSV regions 531 and 532. The rolling control unit 14 and the column ADC 15 may be provided on the inner peripheral sides of the TSV regions 541 and 542, respectively. The global control units 133 and 134 may be provided near the center of the logic chip 52 so as to correspond to the central region of the sensor array unit 12.

Subsequently, a specific example of the distance measuring sensor according to the present embodiment in the case of the third laminated arrangement will be described with reference to FIGS. 16 to 17. FIG. 16 is a perspective view schematically showing the configuration of the distance measuring sensor in the third stacked arrangement. FIG. 17 is a plan view schematically showing the third stacked arrangement of the distance measuring sensors.

As shown in FIG. 16, the distance measuring sensor in the third stacked arrangement has a structure in which the sensor chip 51 on which the sensor array unit 12 is formed and the logic chip 52 on which the global control unit 13 is formed are laminated. .. The control line 21 that supplies a global control signal to each of the sensor elements 120 arranged in the sensor array unit 12 is a global control unit formed in the logic chip 52 by the chip-to-chip connection structure provided in each of the sensor elements 120. It is electrically connected to 13. The chip-to-chip connection structure may be, for example, a through electrode formed between chips or a joint structure between electrodes (Cu-Cu connection or microbumps). The chip-to-chip connection structure can be formed for each sensor element 120 depending on the size of the structure or the forming method.

The distance measuring sensor can be formed over a plurality of chips by providing each configuration in a stacked arrangement as shown in FIG.

As shown in FIG. 17, the sensor chip 51 is provided with a sensor array unit 12 and a TSV area 531. The logic chip 52 is provided with a plurality of global control units 137, a rolling control unit 14, and a TSV area. 541 and are provided. Since the functions of each configuration are as described above, the description thereof is omitted here.

For example, the signal output from the sensor element 120 of the sensor array unit 12 is AD-converted for each sensor element 120 (so-called AD conversion by the pixel ADC), and then output to an external circuit or the like. The TSV region 531 and the TSV region 541 are regions in which a chip-to-chip connection structure for electrically connecting the sensor chip 51 and the logic chip 52 is formed. Through electrodes may be provided in the TSV regions 531 and 532 and the TSV regions 541 and 542, for example.

The global control unit 137 can be electrically connected to the sensor element 120 via the chip-to-chip connection structure formed for each sensor element 120. Further, the rolling control unit 14 can be electrically connected to each of the sensor elements 120 of the sensor array unit 12 via the TSV regions 531 and 541.

The TSV region 531 is provided on the outer peripheral side of the sensor chip 51, and the TSV region 541 is provided on the outer peripheral side of the logic chip 52 so as to correspond to the TSV region 531. The rolling control unit 14 may be provided on the inner peripheral side of the TSV region 541. The global control unit 137 may be provided over the entire logic chip 52 so as to correspond to the region where the sensor array unit 12 is formed.

<2. Second embodiment>
(2.1. Configuration of ranging sensor)
Next, with reference to FIG. 18, the configuration of the distance measuring sensor according to the second embodiment of the present disclosure will be described. FIG. 18 is a schematic diagram showing the incident angle of the incident light in each of the sensor elements 120 arranged in the Y direction in the distance measuring sensor according to the second embodiment.

As shown in FIG. 18, in the distance measuring sensor according to the present embodiment, the incident light is directed to the first storage unit 121 side by shifting (shifting) the center position of the microlens 320 from the center position of the sensor element 120. The photoelectric conversion unit 210 and the photoelectric conversion unit 210 on the second storage unit 122 side are similarly incident. That is, in the distance measuring sensor according to the present embodiment, the position of the sensor array unit 12 in the Y direction (that is, the arrangement direction of the first storage unit 121 and the second storage unit 122) so that the incident center of the incident light does not change. The arrangement of the microlens 320 is shifted according to the above.

Specifically, as shown in FIG. 18, in the sensor element 120A on the upper side of the sensor array unit 12, the incident light is incident from the center side of the sensor array unit 12 toward the upper side. Therefore, light is more likely to be incident on the photoelectric conversion unit 210 on the first storage unit 121 side than on the photoelectric conversion unit 210 on the second storage unit 122 side. Therefore, in the sensor element 120A, by shifting the microlens 320 to the center side of the sensor array unit 12, the incident light is photoelectrically converted between the photoelectric conversion unit 210 on the first storage unit 121 side and the second storage unit 122 side. It is made to be uniformly incident on the portion 210.

Further, in the sensor element 120C on the lower side of the sensor array unit 12, the incident light is incident from the center side of the sensor array unit 12 toward the lower side. Therefore, light is more likely to be incident on the photoelectric conversion unit 210 on the second storage unit 122 side than on the photoelectric conversion unit 210 on the first storage unit 121 side. Therefore, in the sensor element 120C, by shifting the microlens 320 to the center side of the sensor array unit 12, the incident light is photoelectrically converted between the photoelectric conversion unit 210 on the first storage unit 121 side and the second storage unit 122 side. It is made to be uniformly incident on the portion 210.

In the sensor element 120B provided near the center of the sensor array unit 12, the incident light is similarly transmitted to the photoelectric conversion unit 210 on the first storage unit 121 side and the photoelectric conversion unit 210 on the second storage unit 122 side. Incident. Therefore, in the sensor element 120B, the position of the microlens 320 does not have to be displaced.

In the distance measuring sensor according to the present embodiment, in each of the sensor elements 120 of the sensor array unit 12, the incident light is applied to the photoelectric conversion unit 210 on the first storage unit 121 side and the photoelectric conversion unit 210 on the second storage unit 122 side. The position of the microlens 320 is controlled so that the light is uniformly incident. According to this, in the distance measuring sensor according to the present embodiment, the electron recovery efficiency of the first storage unit 121 and the electron recovery efficiency of the second storage unit 122 are obtained in each of the sensor elements 120 of the sensor array unit 12. Can be made uniform.

Specifically, the position of the microlens 320 in each of the sensor elements 120 may be shifted so as to have anisotropy in the arrangement direction of the first storage unit 121 and the second storage unit 122. Alternatively, the position of the microlens 320 in each of the sensor elements 120 is shifted with respect to the center of the sensor array unit 12 so as to be symmetrical in the arrangement direction of the first storage unit 121 and the second storage unit 122. May be good. Alternatively, the position of the microlens 320 in each of the sensor elements 120 may be shifted so as to have anisotropy based on the arrangement of the first global control unit 131 and the second global control unit 132. According to this, in the distance measuring sensor according to the present embodiment, it is possible to suppress in-plane accuracy variation of the distance information measured by each of the sensor elements 120 of the sensor array unit 12.

Subsequently, a specific example of the distance measuring sensor according to the present embodiment will be described with reference to FIGS. 19A to 19D. 19A to 19D are plan views schematically showing a specific example of the distance measuring sensor according to the present embodiment.

As shown in FIG. 19A, in the distance measuring sensor according to the present embodiment, the micro is displaced so as to have anisotropy in the arrangement direction of the first storage unit 121 and the second storage unit 122 of the sensor element 120. The lens group 321 may be provided. Specifically, in the microlens group 321, the center position of the microlens 320 is closer to the center side of the sensor array unit 12 from the center position of the sensor element 120 as the distance from the center of the sensor array unit 12 in the Y direction increases. It may be offset. For example, even if the center position of the microlens 320 shifts from the center position of the sensor element 120 to the center side of the sensor array unit 12 based on a function corresponding to the distance in the Y direction from the center of the sensor array unit 12. good.

According to this, in the distance measuring sensor according to the present embodiment, by shifting the arrangement of the microlens 320 in one direction, the bias of the light incident on the first storage unit 121 and the second storage unit 122 of the sensor element 120 is biased. Can be corrected.

Further, as shown in FIG. 19B, the ranging sensor according to the present embodiment may be provided with a microlens group 322 whose arrangement is shifted concentrically. Specifically, in the microlens group 322, the center position of the microlens 320 shifts from the center position of the sensor element 120 toward the center side of the sensor array unit 12 as the distance from the center of the sensor array unit 12 increases. You may. For example, the center position of the microlens 320 may shift from the center position of the sensor element 120 to the center side of the sensor array unit 12 based on a function according to the distance from the center of the sensor array unit 12.

According to this, in the distance measuring sensor according to the present embodiment, by shifting the arrangement of the microlens 320 in all directions, the bias of the light incident on the first storage unit 121 and the second storage unit 122 of the sensor element 120 is biased. Can be corrected with higher accuracy.

Further, as shown in FIG. 19C, in the distance measuring sensor according to the present embodiment, the microlens group 323 in which the arrangement of the microlens 320 is shifted may be provided only in a part of the sensor array unit 12. .. Specifically, the microlens group 323 is provided in the upper half of the sensor array unit 12, and the center position of the microlens 320 is such that the distance from the center of the sensor array unit 12 in the Y direction is from the center position of the sensor element 120. It may shift so as to be closer to the center side of the sensor array unit 12. For example, the center position of the microlens 320 of the microlens group 323 is from the center position of the sensor element 120 to the center side of the sensor array unit 12 based on the function according to the distance in the Y direction from the center of the sensor array unit 12. It may be offset.

According to this, in the distance measuring sensor according to the present embodiment, the arrangement of the microlens 320 in a part of the sensor array unit 12 is shifted, so that the first storage unit 121 and the second storage unit 122 of the sensor element 120 are shifted. It is possible to easily correct the bias of the light incident on the lens.

Further, as shown in FIG. 19D, the distance measuring sensor according to the present embodiment may be provided with microlens groups 324 and 325 whose deviation amount is controlled by different functions. Specifically, in the microlens group 324 and 325, the sensor element 120 has an anisotropy in the arrangement direction of the first storage unit 121 and the second storage unit 122 of the sensor element 120 so that the center position of the microlens 320 has an anisotropy. The arrangement is shifted from the center position of. Further, the center position of the microlens 320 of the microlens group 324 and the center position of the microlens 320 of the microlens group 325 are based on different functions according to the distance in the Y direction from the center of the sensor array unit 12. It may be shifted from the center position of the sensor element 120 toward the center side of the sensor array unit 12.

According to this, in the distance measuring sensor according to the present embodiment, by shifting the arrangement of the microlens 320 for each region of the sensor array unit 12, the first storage unit 121 and the second storage unit 122 of the sensor element 120 It is possible to correct the bias of the incident light more precisely.

<3. Third Embodiment>
Subsequently, the configuration of the distance measuring sensor according to the third embodiment of the present disclosure will be described with reference to FIGS. 20A to 20D. 20A to 20D are plan views schematically showing a specific example of the distance measuring sensor according to the present embodiment.

The distance measuring sensor according to the present embodiment combines the first embodiment and the second embodiment with in-plane accuracy of distance information measured by each of the sensor elements 120 of the sensor array unit 12. It further suppresses variation. Specifically, in the distance measuring sensor according to the present embodiment, the sensor element 120 uses both the voltage drop of the first control line 211 and the second control line 212 and the deviation of the arrangement of the microlens 320. The difference in electron recovery efficiency between the first storage unit 121 and the second storage unit 122 due to the arrangement is corrected.

As shown in FIG. 20A, for example, the distance measuring sensor according to the present embodiment includes a distance measuring sensor including the first control line 211 and the second control line 212 as shown in FIG. 7, and a micro as shown in FIG. 19A. It may be configured by combining with a distance measuring sensor provided with a lens. Specifically, the distance measuring sensor shown in FIG. 20A includes a first global control unit 131 and a second global control unit 132 provided so as to face each other in the arrangement direction of the first storage unit 121 and the second storage unit 122. Sensor elements in the arrangement direction of the first control line 211 and the second control line 212 extending from the first global control unit 131 and the second global control unit 132 in a comb-teeth shape, and the first storage unit 121 and the second storage unit 122. A microlens group 321 provided with the center position shifted from the center position of 120 may be provided.

Further, as shown in FIG. 20B, for example, the distance measuring sensor according to the present embodiment includes a distance measuring sensor including the first control line 211 and the second control line 212 as shown in FIG. 7, and as shown in FIG. 19B. It may be configured by combining with a ranging sensor provided with a microlens. Specifically, the distance measuring sensor shown in FIG. 20B includes a first global control unit 131 and a second global control unit 132 provided so as to face each other in the arrangement direction of the first storage unit 121 and the second storage unit 122. The first control line 211 and the second control line 212 extending in a comb-teeth shape from the first global control unit 131 and the second global control unit 132, and the center position are shifted concentrically from the center position of the sensor element 120. The provided microlens group 322 may be provided.

Further, as shown in FIG. 20C, for example, the distance measuring sensor according to the present embodiment includes a distance measuring sensor including the first control line 211 and the second control line 212 as shown in FIG. 7, and as shown in FIG. 19C. It may be configured by combining with a ranging sensor provided with a microlens. Specifically, the distance measuring sensor shown in FIG. 20C includes a first global control unit 131 and a second global control unit 132 provided so as to face each other in the arrangement direction of the first storage unit 121 and the second storage unit 122. The first control line 211 and the second control line 212 extending in a comb-teeth shape from the first global control unit 131 and the second global control unit 132, and the sensor array by shifting the center position from the center position of the sensor element 120. A microlens group 323 provided in a partial region of the unit 12 may be provided.

Further, for example, as shown in FIG. 20D, the distance measuring sensor according to the present embodiment includes a distance measuring sensor including the first control line 211 and the second control line 212 as shown in FIG. 7, and as shown in FIG. 19D. It may be configured by combining with a ranging sensor provided with a microlens. Specifically, the distance measuring sensor shown in FIG. 20D includes a first global control unit 131 and a second global control unit 132 provided so as to face each other in the arrangement direction of the first storage unit 121 and the second storage unit 122. The first control line 211 and the second control line 212 extending in a comb-teeth shape from the first global control unit 131 and the second global control unit 132, and the center position shift from the center position of the sensor element 120 based on different functions. A group of microlenses 324 and 325 provided may be provided.

According to the distance measuring sensors shown in FIGS. 20A to 20D, by equalizing the electron recovery efficiency in the first storage unit 121 and the second storage unit 122 in the plane, each of the sensor elements 120 of the sensor array unit 12 It is possible to further suppress in-plane accuracy variation of the distance information measured in.

Although the preferred embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the technical scope of the present disclosure is not limited to such examples. It is clear that anyone with ordinary knowledge in the technical field of the present disclosure may come up with various modifications or amendments within the scope of the technical ideas described in the claims. Is, of course, understood to belong to the technical scope of the present disclosure.

In addition, the effects described herein are merely explanatory or exemplary and are not limited. That is, the techniques according to the present disclosure may have other effects apparent to those skilled in the art from the description herein, in addition to or in place of the above effects.

The following first and second configurations, and combinations thereof also belong to the technical scope of the present disclosure.
(First configuration)
(1)
A sensor array unit configured by arranging a plurality of sensor elements in which a first storage unit and a second storage unit are arranged in one direction to recover electrons obtained by photoelectrically converting incident light, respectively, in an array.
A first control line that extends in the arrangement direction of the first storage unit and the second storage unit and is electrically connected to each of the first storage units.
A second control line that extends in the arrangement direction of the first storage unit and the second storage unit and is electrically connected to each of the second storage units.
A global control unit provided on the periphery of the sensor array unit and controlling the voltage applied to the first control line and the second control line,
A photoelectric conversion unit and a microlens provided on the surface side of the first storage unit and the second storage unit where the incident light is incident, and
A distance measuring sensor.
(2)
The distance measuring sensor according to (1), wherein the microlens is provided for each sensor element.
(3)
In the above (2), the microlens in each of the sensor elements is provided by shifting the center position from the center position of the sensor element based on the distance between the sensor element and the center of the sensor array portion. The distance measuring sensor described.
(4)
The microlens in each of the sensor elements shifts the center position from the center position of the sensor element to the center side of the sensor array unit as the distance between the sensor element and the center of the sensor array unit increases. The distance measuring sensor according to (3) above, which is provided.
(5)
The distance measuring sensor according to (2) above, wherein the microlens in each of the sensor elements is provided by shifting the center position from the center position of the sensor element based on the position of the global control unit.
(6)
Any one of the above (2) to (5), wherein the microlens in each of the whole or a part of the sensor element of the sensor array portion shifts from the center position of the sensor element based on the same function. The ranging sensor described in the section.
(7)
One of the above (2) to (5), wherein the center position of the microlens in each of the sensor elements in the entire sensor array unit shifts from the center position of the sensor element based on a different function. The ranging sensor described in.
(8)
The distance measuring sensor according to any one of (1) to (7) above, wherein the sensor element photoelectrically converts the incident light by the photoelectric conversion unit having a back-illuminated structure.
(9)
The distance measuring sensor according to any one of (1) to (8) above, wherein the sensor array unit is provided in a rectangular area.
(10)
The global control unit applies a voltage higher than the voltage applied to one of the first control line and the second control line to the other of the first control line and the second control line, said (1). The distance measuring sensor according to any one of (9).
(11)
A sensor array unit configured by arranging a plurality of sensor elements in which a first storage unit and a second storage unit are arranged in one direction to recover electrons obtained by photoelectrically converting incident light, respectively, in an array.
A first control line that extends in the arrangement direction of the first storage unit and the second storage unit and is electrically connected to each of the first storage units.
A second control line that extends in the arrangement direction of the first storage unit and the second storage unit and is electrically connected to each of the second storage units.
A global control unit provided on the periphery of the sensor array unit and controlling the voltage applied to the first control line and the second control line,
A photoelectric conversion unit and a microlens provided on the surface side of the first storage unit and the second storage unit where the incident light is incident, and
Equipped with a time of flight sensor.

(Second configuration)
(1)
A sensor array unit configured by arranging a plurality of sensor elements in which a first storage unit and a second storage unit are arranged in one direction to recover electrons obtained by photoelectrically converting incident light, respectively, in an array.
A first control line electrically connected to the first storage unit of each of the sensor elements,
A second control line electrically connected to the second storage unit of each of the sensor elements,
A plurality of global control units provided at different positions on the peripheral edge of the sensor array unit to control the voltage applied to the first control line and the second control line.
A distance measuring sensor.
(2)
The sensor array unit is provided in a rectangular area and is provided.
The distance measuring sensor according to (1), wherein each of the global control units is provided along the rectangular side of the sensor array unit.
(3)
The global control unit is provided along the side of the sensor array unit on the side facing the side where the first storage unit is arranged, and controls the voltage applied to the first control line. A second global control unit, which is provided along the side of the sensor array unit on the side facing the side where the second storage unit is arranged and controls the voltage applied to the second control line. The ranging sensor according to (2) above.
(4)
The distance measuring sensor according to (3), wherein the first control line and the second control line are provided in a comb-teeth shape extending from the first global control unit or the second global control unit facing each other. ..
(5)
Each of the global control units is provided along the opposite sides of the rectangular shape of the sensor array unit.
The above (2), wherein each of the global control units controls the voltage applied to the first control line and the second control line of the sensor element on the side where each of the global control units is provided. Distance measurement sensor.
(6)
The distance measuring sensor according to (5) above, wherein the number of the sensor elements to which a voltage is applied to the first storage unit and the second storage unit from each of the different global control units is substantially the same.
(7)
Each of the global control units is provided along the adjacent sides of the rectangular shape of the sensor array unit.
The distance measuring sensor according to (2) above, wherein each of the global control units controls the voltage applied to the first control line and the second control line of the different sensor elements.
(8)
The distance measuring sensor according to (7) above, wherein the number of the sensor elements to which a voltage is applied to the first storage unit and the second storage unit from each of the different global control units is substantially the same.
(9)
The distance measuring sensor according to (8), wherein the sensor elements to which voltages are applied to the first storage unit and the second storage unit from each of the different global control units are arranged alternately with each other.
(10)
The global control unit applies a voltage higher than the voltage applied to one of the first control line and the second control line to the other of the first control line and the second control line, said (1). The distance measuring sensor according to any one of (9).
(11)
The item according to any one of (1) to (10) above, wherein a photoelectric conversion unit and a microlens are further provided on the surface side of the first storage unit and the second storage unit where the incident light is incident. Distance measurement sensor.
(12)
The distance measuring sensor according to (11), wherein the sensor element photoelectrically converts the incident light by the photoelectric conversion unit having a back-illuminated structure.
(13)
A sensor array unit configured by arranging a plurality of sensor elements in which a first storage unit and a second storage unit are arranged in one direction to recover electrons obtained by photoelectrically converting incident light, respectively, in an array.
A first control line electrically connected to the first storage unit of each of the sensor elements,
A second control line electrically connected to the second storage unit of each of the sensor elements,
A plurality of global control units provided at different positions on the peripheral edge of the sensor array unit to control the voltage applied to the first control line and the second control line.
Equipped with a time of flight sensor.

11 Distance measurement sensor 12 Sensor array unit 13 Global control unit 14 Rolling control unit 15 Column ADC
16 Input / output unit 17 Logic circuit 21 Control line 51 Sensor chip 52 Logic chip 120 Sensor element 121 1st storage unit 122 2nd storage unit 131 1st global control unit 132 2nd global control unit 210 photoelectric conversion unit 211 1st control line 212 2nd control line 311 Optical adjustment layer 312 Optical black 320 Micro lens

Claims (15)

A sensor array unit configured by arranging a plurality of sensor elements in which a first storage unit and a second storage unit are arranged in one direction to recover electrons obtained by photoelectrically converting incident light, respectively, in an array.
A first control line that extends in the arrangement direction of the first storage unit and the second storage unit and is electrically connected to each of the first storage units.
A second control line that extends in the arrangement direction of the first storage unit and the second storage unit and is electrically connected to each of the second storage units.
A first global control unit, which is provided on the peripheral edge of the sensor array unit on the side facing the side where the first storage unit is arranged and controls the voltage applied to the first control line,
A second global control unit, which is provided on the peripheral edge of the sensor array unit on the side facing the side where the second storage unit is arranged and controls the voltage applied to the second control line,
A distance measuring sensor. The sensor array unit is provided in a rectangular area and is provided.
The distance measuring sensor according to claim 1, wherein the first global control unit and the second global control unit are provided along the opposite sides of the rectangular shape of the sensor array unit. The distance measuring sensor according to claim 2, wherein the first control line and the second control line are provided in a comb-teeth shape extending from the first global control unit or the second global control unit facing each other. The distance measuring sensor according to claim 3, wherein the first control line and the second control line are provided alternately in a direction orthogonal to the arrangement direction of the first storage unit and the second storage unit. The first global control unit and the second global control unit charge a voltage higher than that applied to one of the first control line and the second control line of the first control line and the second control line. The distance measuring sensor according to claim 1, which is applied to the other side. The distance measuring sensor according to claim 1, further comprising a photoelectric conversion unit and a microlens on the surface side of the first storage unit and the second storage unit where the incident light is incident. The distance measuring sensor according to claim 6, wherein the microlens is provided for each sensor element. The seventh aspect of the present invention, wherein the microlens in each of the sensor elements is provided by shifting the center position from the center position of the sensor element based on the distance between the sensor element and the center of the sensor array portion. Distance measurement sensor. The microlens in each of the sensor elements shifts the center position from the center position of the sensor element to the center side of the sensor array unit as the distance between the sensor element and the center of the sensor array unit increases. The distance measuring sensor according to claim 8, which is provided. 7. The microlens in each of the sensor elements is provided by shifting the center position from the center position of the sensor element based on the position of the first global control unit or the second global control unit. The ranging sensor described in. The measurement according to claim 7, wherein the microlens in each of the sensor elements is provided by shifting the center position from the center position of the sensor element in the arrangement direction of the first storage portion and the second storage portion. Distance sensor. The seventh aspect of the present invention, wherein the microlens in each of the whole or a part of the sensor elements of the sensor array portion is provided by shifting the center position from the center position of the sensor element based on the same function. Distance measurement sensor. The measurement according to claim 7, wherein the center position of the microlens in each of the sensor elements as a whole of the sensor array unit is provided by shifting the center position based on a different function from the center position of the sensor element. Distance sensor. The distance measuring sensor according to claim 6, wherein the sensor element photoelectrically converts the incident light by the photoelectric conversion unit having a back-illuminated structure. A sensor array unit configured by arranging a plurality of sensor elements in which a first storage unit and a second storage unit are arranged in one direction to recover electrons obtained by photoelectrically converting incident light, respectively, in an array.
A first control line that extends in the arrangement direction of the first storage unit and the second storage unit and is electrically connected to each of the first storage units.
A second control line that extends in the arrangement direction of the first storage unit and the second storage unit and is electrically connected to each of the second storage units.
A first global control unit, which is provided on the peripheral edge of the sensor array unit on the side facing the side where the first storage unit is arranged and controls the voltage applied to the first control line,
A second global control unit, which is provided on the peripheral edge of the sensor array unit on the side facing the side where the second storage unit is arranged and controls the voltage applied to the second control line,
Equipped with a time of flight sensor.

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