JP7049953B2 - Board processing equipment, board processing method and computer-readable recording medium - Google Patents

Description

Exemplary embodiments of the present disclosure relate to substrate processing equipment, substrate processing methods and computer readable recording media.

When the pattern is repeatedly formed on the wafer, the surface to which the treatment liquid is applied in the n + 1th layer is required to form the film of the n + 1th layer at an appropriate height after the pattern is formed in the nth layer. (That is, the height of the nth layer film (lower layer film)) needs to be flat.

Japanese Unexamined Patent Publication No. 2008-251918

In the technique described in Patent Document 1, the wafer is pressed by a flat press to flatten the film formed on the wafer. Here, in the film flattening process, it is desired to suppress the generation of bubbles between the wafer and the film, which affects the pattern formation.

The present disclosure has been made in view of the above circumstances, and realizes flattening of the film without affecting pattern formation.

The substrate processing apparatus according to one aspect of the present disclosure is a support provided so as to sandwich the substrate between a pressure roller that pressurizes a film formed on the substrate by applying a treatment liquid and the pressure roller. It has a department. The pressure roller sequentially pressurizes the film formed on the substrate from one end to the other end of the substrate.

In the substrate processing apparatus according to the present disclosure, the pressure roller presses the film formed on the substrate from one end to the other end of the substrate in a state where the substrate is sandwiched between the support and the support. In this way, the pressurizing roller presses the film formed on the substrate so as to perform a scanning operation from one end to the other end of the substrate, thereby removing air bubbles generated between the substrate and the film. While (extruding), the membrane can be flattened. As a result, it is possible to prevent bubbles from remaining between the substrate and the film, and to realize flattening of the film formed on the substrate without affecting the pattern formation of the substrate.

According to the present disclosure, flattening of the film can be realized without affecting the pattern formation.

FIG. 1 is a diagram schematically showing an example of a flattening device according to the first embodiment. FIG. 2 is a block diagram showing a hard wafer configuration of the controller. FIG. 3 is a flowchart showing a flattening processing procedure. 4A and 4B are diagrams schematically showing a flattening image, where FIG. 4A schematically shows a wafer before flattening and FIG. 4B schematically shows a wafer after flattening. FIG. 5 is a diagram schematically showing an example of a flattening device according to a second embodiment. FIG. 6 is a diagram schematically showing an example of a flattening device according to a third embodiment. FIG. 7 is a diagram schematically showing a flattening device according to a modified example.

[First Embodiment]
Hereinafter, the first embodiment according to the present disclosure will be described in more detail with reference to the drawings. In the following description, the same reference numerals will be used for the same elements or elements having the same function, and duplicate description will be omitted.

(Flatizer)
FIG. 1 is a diagram schematically showing an example of the flattening device 1 according to the first embodiment. The flattening device 1 (board processing device) is a device for flattening the underlayer film LF formed on the surface of the wafer W by applying the treatment liquid. The lower layer film LF is a film other than the uppermost film in a configuration in which a plurality of films are laminated on the wafer W. Therefore, for example, in a configuration in which a three-layer film is formed on a wafer, the lower layer film LF can include both a lowermost film and an intermediate film (intermediate film). The lower layer film LF is, for example, an SOC (Spin on Carbon) film, an amorphous carbon film, or the like. Hereinafter, the treatment liquid for forming the underlayer film LF will be described as having ultraviolet curability.

In the substrate processing system including the flattening apparatus 1, the processing liquid for forming the underlayer film LF is applied to the surface of the wafer W before the wafer W is carried into the flattening apparatus 1. Further, in the substrate processing system including the flattening device 1, after the lower layer film LF is flattened in the flattening device 1, a treatment liquid for forming an uppermost film (for example, a resist film) is applied to the surface of the wafer W. It is applied and the top film is formed.

As shown in FIG. 1, the flattening device 1 includes a flattening processing unit 2 and a controller 100. In the following description, the terms "upper" and "lower" mean "upper" and "lower" in the vertical direction with respect to the installation surface of the flattening device 1.

The flattening processing unit 2 includes a sender arm 10, a preheating lamp 20, a pressure roller 30, a temperature sensor 40, a film roller 50, a support roller 60, a UV (Ultra Violet) curing lamp 70, and the like. It includes a receiver arm 80 and.

The sender arm 10 (sender) is a transfer mechanism for feeding the wafer W in the pressure roller 30 direction. For example, the wafer W is held by vacuum suction, and the wafer W is transferred to the pressure roller 30 according to the control of the controller 100. Transport to just below. The wafer W transported by the sender arm 10 is a wafer on which the treatment liquid for forming the underlayer film LF is applied to the surface and before the pressure is applied to the pressure roller 30.

The receiver arm 80 (receiver) is a transfer mechanism that receives the wafer W pressurized by the pressurizing roller 30. The receiver arm 80 transfers the wafer W to another transfer mechanism (an external transfer mechanism of the flattening processing unit 2). As described above, the sender arm 10 and the receiver arm 80 have a function as a transport unit for transporting the wafer W.

The preheating lamp 20 (preheating section) heats the wafer W before being pressurized by the pressurizing roller 30. The preheating lamp 20 heats the wafer W at a predetermined heating temperature according to the control of the controller 100. The heating temperature is determined according to the properties of the underlayer film LF. The heating temperature is set to a temperature at which the lower layer film LF becomes soft enough that the lower layer film LF does not cause a cross-linking reaction and the lower layer film LF can be sufficiently deformed by the pressurization of the pressure roller 30. For example, when the lower layer film LF is an SOC film, the heating temperature may be about 200 ° C.

The pressure roller 30 pressurizes the underlayer film LF formed on the surface of the wafer W. The pressure roller 30 has a first roll 31 and a temperature control unit 32. The first roll 31 is provided so as to sandwich the wafer W with the second roll 61 of the support roller 60. The pressure roller 30 is provided on the surface side (the surface on which the lower layer film LF is formed) of the wafer W conveyed by the sender arm 10. The first roll 31 has a drive unit (not shown), and the drive unit is controlled by the controller 100. The pressure roller 30 rotates (rotates counterclockwise in FIG. 1) with the wafer W sandwiched between the second roll 61 and the drive unit by being controlled by the controller 100. The wafer W sandwiched between the first roll 31 and the second roll 61 is conveyed according to the rotation of the first roll 31 and the second roll 61. As a result, the first roll 31 of the pressure roller 30 sequentially pressurizes the underlayer film LF formed on the wafer W from one end to the other end of the wafer W. A downward force is applied to the first roll 31 by a roller pressing means (not shown), and the lower layer film LF is pressed according to the downward force. The first roll 31 pressurizes the underlayer film LF via the film FF (details will be described later). The width (length in the axial direction) of the first roll 31 may be, for example, about the same as the width of the underlayer film LF formed on the wafer W.

The temperature control unit 32 is a heater that adjusts the temperature of the pressurizing roller 30 itself (first roll 31) to a temperature corresponding to the heating temperature of the preheating lamp 20. The temperature control unit 32 adjusts, for example, the surface temperature of the first roll 31 so as to be about the same as the heating temperature by the preheating lamp 20 according to the control of the controller 100.

The temperature sensor 40 is a sensor that measures the surface temperature of the first roll 31 of the pressure roller 30. The temperature sensor 40 transmits the measured temperature to the controller 100. As a result, the controller 100 can output the temperature adjustment amount to the temperature control unit 32 of the pressure roller 30 based on the target temperature of the first roll 31 and the measured temperature of the first roll 31. ..

The film roller 50 feeds the film FF toward the first roll 31 so that the film FF is interposed between the first roll 31 and the underlayer film LF of the wafer W, and winds up the pressed film FF. .. The film FF is, for example, a fluorine-based film. The film roller 50 has a third roll 51 and a fourth roll 52. At least one end of the film FF is wound around the third roll 51, and at least the other end is wound around the fourth roll 52. In the state where the first roll 31 starts to rotate, the film FF extends from the third roll 51 to the fourth roll 52 via between the first roll 31 and the underlayer film LF. When the first roll 31 starts rotating (rotating counterclockwise in FIG. 1) in a state where the film FF is interposed between the first roll 31 and the underlayer film LF of the wafer W, the film FF is said to rotate. The film FF moves according to the rotation. Then, the third roll 51 and the fourth roll 52 rotate (rotate clockwise in FIG. 1) according to the movement of the film FF. The film FF is fed from the third roll 51 toward the first roll 31, and the fourth roll 52 winds up the pressed film FF. In this way, the third roll 51 and the fourth roll 52 rotate according to the rotation of the first roll 31, so that the film FF is always interposed between the first roll 31 and the lower film LF. can do. The third roll 51 and the fourth roll 52 may have both or one of them having a driving unit.

The support roller 60 (support portion) is provided so as to sandwich the wafer W with the pressure roller 30. The support roller 60 has a second roll 61 and a temperature control portion 62. The second roll 61 is provided so as to sandwich the wafer W with the first roll 31 of the pressure roller 30, and the back surface of the wafer W conveyed by the sender arm 10 (the forming surface of the lower layer film LF). It is provided on the opposite side) side. The second roll 61 rotates (rotates clockwise in FIG. 1) in response to the rotation of the first roll 31 having the drive unit and the transfer of the wafer W. The second roll 61 is subjected to an upward force by a roller pressing means (not shown). The second roll 61 sandwiches the wafer W with the first roll 31 according to an upward force from the roller pressing means (not shown).

The temperature control unit 62 is a heater that adjusts the temperature of the support roller 60 itself (specifically, the second roll 61) to a temperature corresponding to the heating temperature of the preheating lamp 20. The temperature control unit 62 adjusts, for example, the surface temperature of the second roll 61 so as to be about the same as the heating temperature by the preheating lamp 20 according to the control of the controller 100.

The UV curing lamp 70 (curing processing unit) performs a curing treatment on the underlayer film LF formed on the wafer W after being pressurized by the pressure roller 30. Specifically, the UV curing lamp 70 performs UV exposure to the underlayer film LF of the wafer W immediately after the pressurization by the first roll 31 via the film FF is completed under the control of the controller 100. This cures the underlayer film LF. The temperature of the wafer W when UV exposure is started by the UV curing lamp 70 is, for example, a temperature higher than normal temperature. As for the position of the substrate during the curing process, it is better to suppress deterioration of the film surface flatness due to the passage of time after pressurization by the pressurizing roller 30 and the inertial force during transfer as much as possible, so that the flattening process unit 2 is used. It is preferably in the same space provided, and more preferably in the flattening processing unit.

The controller 100 controls each configuration of the flattening processing unit 2 so that the flattening processing of the underlayer film LF formed on the surface of the wafer W is performed.

Specifically, the controller 100 controls the sender arm 10 so that the wafer W is fed in the pressure roller 30 direction. The controller 100 controls the preheating lamp 20 so that the wafer W before being pressurized by the pressurizing roller 30 is heated. The controller 100 drives the pressure roller 30 so that the first roll 31 rotates with the wafer W sandwiched between the first roll 31 of the pressure roller 30 and the second roll 61 of the support roller 60. Controls the unit (not shown). The controller 100 acquires the surface temperature (measured temperature) of the first roll 31 from the temperature sensor 40, and based on the target temperature of the first roll 31 and the measured temperature of the first roll 31, the temperature control unit of the pressurizing roller 30. The temperature adjustment amount is output to the temperature control portion 62 of the 32 and the support roller 60. The controller 100 controls the UV curing lamp 70 so that UV exposure is performed on the underlayer film LF of the wafer W after being pressurized by the pressurizing roller 30. The controller 100 controls the receiver arm 80 so that the wafer W pressurized by the pressurizing roller 30 is delivered to another transfer mechanism (an external transfer mechanism of the flattening processing unit 2).

The hardware of the controller 100 is composed of, for example, one or a plurality of control computers. The controller 100 has, for example, the circuit 100A shown in FIG. 2 as a hardware configuration. The circuit 100A may be composed of an electric circuit element (circuitry). Specifically, the circuit 100A includes a processor 100B, a memory 100C, a storage 100D, and an input / output port 100E. The processor 100B constitutes each of the above-mentioned functional modules by executing a program in cooperation with at least one of the memory 100C and the storage 100D and executing input / output of a signal via the input / output port 100E. The input / output port 100E inputs / outputs signals between the processor 100B, the memory 100C, and the storage 100D, and each configuration of the flattening processing unit 2.

(Flatration processing procedure)
Next, with reference to FIG. 3, a flattening processing procedure will be described as an example of the substrate processing method. The following processing is executed by the controller 100 controlling each configuration of the flattening processing unit 2.

In the flattening treatment procedure, first, the wafer W is carried in (sent in the pressure roller 30 direction) by the sender arm 10 (step S1). Subsequently, the wafer W before being pressurized by the pressurizing roller 30 is heated by the preheating lamp 20 (step S2).

Subsequently, the first roll 31 is rotated while the wafer W is sandwiched between the first roll 31 of the pressure roller 30 and the second roll 61 of the support roller 60, so that the wafer W is formed on the surface of the wafer W. The underlayer film LF is pressurized (step S3). The first roll 31 of the pressure roller 30 sequentially pressurizes the underlayer film LF formed on the wafer W from one end to the other end of the wafer W.

Subsequently, the UV curing lamp 70 performs UV exposure on the underlayer film LF formed on the wafer W after being pressurized by the pressurizing roller 30, so that the underlayer film LF is cured (step). S4).

Finally, the wafer W pressurized by the pressurizing roller 30 is received by the receiver arm 80, and the wafer W is carried out to another transfer mechanism (an external transfer mechanism of the flattening processing unit 2) (step S5). The above is the flattening processing procedure.

(Action effect)
Next, the action and effect of this embodiment will be described. For example, in the case where the treatment liquid is rotationally applied on a stepped wafer, as shown in FIG. 4A, the underlayer film LF formed by the application of the treatment liquid has an uneven shape according to the step of the wafer W. turn into. As a method for flattening the lower layer film LF, a method of polishing the lower layer film LF after applying the treatment liquid can be considered. However, it is not easy to polish the underlayer film LF uniformly over the entire surface, and it is difficult to flatten the underlayer film LF by such a method. Further, for example, a method of flattening the underlayer film LF by setting a pair of heated flat plates in parallel and pressing the wafer W with the pair of flat plates can be considered. However, for example, even if the wafer W is pressed by a pair of flat plates in a reduced pressure environment, bubbles are generated between the wafer W and the underlayer film LF, which affects appropriate pattern formation. There is a risk of coming out.

As described above, conventionally, it has been difficult to flatten the underlayer film LF of the wafer W without affecting the pattern formation.

In order to solve the above-mentioned problems, the flattening apparatus 1 according to the present embodiment includes a pressure roller 30 that pressurizes the underlayer film LF formed on the wafer W by applying the treatment liquid, and a pressure roller 30. A support roller 60 provided so as to sandwich the wafer W between the two. Then, the support roller 60 sequentially pressurizes the underlayer film LF formed on the wafer W from one end to the other end of the wafer W.

In such a flattening device 1, in a state where the wafer W is sandwiched between the second roll 61 of the support roller 60, the first roll 31 of the pressure roller 30 is moved from one end to the other end of the wafer W. The underlayer film LF formed on the wafer W is pressed toward the wafer W. The first roll 31 presses the lower layer film LF linearly so as to perform a scanning operation from one end to the other end of the wafer W, thereby removing air bubbles generated between the wafer W and the lower layer film LF. While (without extruding and entraining), the underlayer membrane LF can be flattened. As a result, it is suppressed that air bubbles remain between the wafer W and the lower layer film LF, and the lower layer film LF formed on the wafer W is flattened without affecting the pattern formation of the wafer W (FIG. 4 (b). ) Can be realized.

Further, the flattening device 1 further includes a preheating lamp 20 for heating the wafer W before being pressurized by the pressurizing roller 30, and the pressurizing roller 30 and the support roller 60 set their own temperature to the preheating lamp. It has temperature control units 32 and 62 that adjust the temperature according to the heating temperature of 20. As a result, the underlayer film LF formed on the wafer W can be appropriately heated to increase the fluidity of the underlayer film LF, and the underlayer film LF can be flattened by the pressure roller 30. That is, flattening of the underlayer film LF can be realized more reliably and easily.

Further, the pressure roller 30 pressurizes the underlayer film LF formed on the wafer W via the film FF. For example, by pressing the underlayer film LF formed on the wafer W by the pressure roller 30 via a fluorine-based film or the like, the peelability after pressure can be improved. Thereby, the flattening of the lower layer film LF can be easily realized. In addition, it is conceivable that the material of the first roll has high peelability in order to ensure the peelability, but compared with this case, the configuration using the film FF makes the design difficulty of the first roll 31 difficult. Can be lowered.

Further, the flattening device 1 has a sender arm 10 that sends the wafer W before being pressurized by the pressurizing roller 30 in the direction of the pressurizing roller 30, and a receiver arm 80 that receives the wafer W pressurized by the pressurizing roller 30. And prepare. As a result, the wafer W can be easily delivered before and after pressurization by the pressurizing roller 30.

Further, the flattening device 1 includes a UV curing lamp 70 that cures the underlayer film LF formed on the wafer W after being pressurized by the pressurizing roller 30. As a result, the flattened underlayer film LF can be cured and the flattened shape can be appropriately maintained.

[Second Embodiment]
The second embodiment according to the present disclosure will be described below with reference to FIG. In the following, the points different from the first embodiment will be mainly described.

Unlike the flattening device 1 according to the first embodiment, the flattening device 201 according to the second embodiment is not provided with the film roller 50, and when the underlayer film LF is pressed by the pressurizing roller 30, the first No film FF is interposed between the roll 31 and the underlayer film LF. Even in a configuration in which the lower layer film LF is directly pressed by the first roll 31 of the pressurizing roller 30 without going through the film FF, the first roll 31 scans from one end to the other end of the wafer W. The underlayer film LF formed on the wafer W is pressed in such a manner. This makes it possible to flatten the lower layer film LF while removing air bubbles generated between the wafer W and the lower layer film LF.

In a configuration in which the first roll 31 directly pressurizes the lower layer film LF without using the film FF, the peelability between the first roll 31 and the lower layer film LF may deteriorate. For example, the first roll 31 may be used. By using a material that is easily peeled off, deterioration of peelability can be avoided.

[Third Embodiment]
The third embodiment according to the present disclosure will be described below with reference to FIG. In the following, the differences from the first and second embodiments will be mainly described.

The flattening device 301 according to the third embodiment is different from the flattening device 1 according to the first embodiment, and has a downstream pressure roller 330 having a fifth roll 331 and a downstream support roller 360 having a sixth roll 361. It is equipped with.

The downstream pressure roller 330 and the downstream support roller 360 are provided downstream of the pressure roller 30 and upstream of the receiver arm 80. The fifth roll 331 of the downstream pressure roller 330 is provided so as to sandwich the wafer W with the sixth roll 361 of the downstream support roller 360, and is rotated according to the control of the controller 100. The wafer W is conveyed in the direction of the receiver arm 80.

In the flattening device 301, the film FF extends from the third roll 51 through the first roll 31 and the lower layer film LF, further through the fifth roll 331 and the lower layer film LF, and to the fourth roll 52. There is. Therefore, the timing at which the film FF in contact with the lower layer film LF is peeled off from the lower layer film LF is after the pressurization of the lower layer film LF by the fifth roll 331 is completed. The first roll 31 and the fifth roll 331 may pressurize different underlayer films LF of the wafer W as in the example shown in FIG. 6, and at the same time, add the underlayer film LF of the same wafer W. It may be something to press.

In the flattening device 301, the UV curing lamp 70 is provided at a position sandwiched between the first roll 31 of the pressure roller 30 and the fifth roll 331 of the downstream pressure roller 330, and is provided by the pressure roller 30. UV exposure is performed on the underlayer film LF formed on the wafer W after pressurization. That is, in the flattening device 301, the UV curing lamp 70 performs UV exposure on the underlayer film LF in contact with the film FF.

When the film FF is used in consideration of peelability, the shape of the underlayer film LF may change due to surface tension or the passage of time from pressurization when the film FF is peeled off, and the underlayer film LF may not be sufficiently flattened. There is. In this respect, in the stage before the film FF is peeled off, UV exposure is performed on the lower layer film LF before the film FF is peeled off and the lower layer film LF is cured, as in the flattening apparatus 301 of the present embodiment. The flattened shape can be determined. This makes it possible to suppress the shape change when the film FF is peeled off, as described above. When a UV peeling type film FF is used, the film FF can be easily peeled off by performing UV exposure before peeling the film FF.

[Modification example]
Although the embodiments according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. For example, the flattening device may include a roller pressing portion 401 (roller pressing means) shown in FIG. 7. The roller pressing portion 401 is a mechanism for pressing the pressure roller 30 downward so that the underlayer film LF formed on the wafer W by the pressure roller 30 is pressed. The roller pressing portion 401 also applies an upward force to the second roll 61 of the support roller 60 facing the pressure roller 30, but the description thereof will be omitted below.

The roller pressing portion 401 has first pressing portions a and b and second pressing portions A and B. The first pressing portions a and b press both end portions of the first roll 31 in the axial direction according to the control of the controller 100. The second pressing portions A and B press the central portion of the first roll 31 in the axial direction according to the control of the controller 100. The roller pressing portion 401 may have any configuration as long as it can press both end portions and the center portion in the axial direction of the first roll 31 according to the control of the controller 100, for example, adding to a plurality of positions. It may have a link mechanism that can adjust the pressure balance.

For example, when only both end portions of the first roll 31 of the pressure roller 30 in the axial direction are pressed, the surface pressure of the central portion in the axial direction becomes small, and the underlayer film LF formed on the wafer W is evenly distributed. It may not be possible to pressurize. In this respect, in the above-described configuration, the roller pressing portion 401 presses the first pressing portions a and b for pressing both end portions of the first roll 31 in the axial direction and the central portion of the first roll 31 in the axial direction. It has two pressing portions A and B. As a result, the surface pressure in the axial direction of the pressurizing roller 30 can be made uniform, and the underlayer film LF formed on the wafer W can be uniformly pressed.

Further, in the flattening apparatus, after the step of pressurizing the underlayer film LF with the pressurizing roller 30, the step of changing the orientation of the wafer W and heating the wafer W again with the preheating lamp 20 and the pressurizing roller 30 The step of pressurizing the wafer W may be performed. For example, when the shape of the L / S (Line & Space) of the pattern on the wafer W is isotropic, the wafer W is pressurized once and then the direction of the wafer W is changed (for example, rotated by 90 degrees). ), And pressurize the wafer W again. As a result, the underlayer film LF formed on the wafer W can be appropriately flattened. As an example of the means for changing the orientation of the wafer W, a transfer assisting unit (not shown) provided with a stage or an arm capable of transferring a substrate to both a sender and a receiver provided separately from the roller can be considered. The orientation of the wafer may be changed in the process of returning the wafer from the receiver to the sender via the transport assisting portion, and it is more preferable that at least one of the transport assisting portion, the sender, and the receiver is provided with a rotation mechanism.

Further, it has been described that the UV curing lamp 70 is used as the curing treatment unit for curing the underlayer film LF formed on the wafer W, but the present invention is not limited to this, and for example, the treatment liquid forming the underlayer film LF is heat. When it has curability, a heating lamp or the like may be used as the effect processing unit.

1,201,301 ... Flattening device (board processing device), 10 ... Sender arm (sender), 20 ... Preheating lamp (preheating section), 30 ... Pressurizing roller, 32 ... Temperature control section, 32,62 ... Temperature control part, 60 ... Support roller (support part), 70 ... UV curing lamp (curing processing part), 80 ... Receiver arm (receiver), 401 ... Roller pressing part (roller pressing means), A, B ... 1st Pressing portion, a, b ... Second pressing portion, FF ... Film, LF ... Underlayer film, W ... Wafer (substrate).

Claims (8)

A pressure roller that pressurizes the film formed on the substrate by applying the treatment liquid, and
A support portion provided so as to sandwich the substrate between the pressure roller and the pressure roller.
A roller pressing means for pressing the pressure roller so that the film formed on the substrate is pressed by the pressure roller is provided.
The pressurizing roller sequentially pressurizes the film formed on the substrate from one end to the other end of the substrate.
The roller pressing means has a first pressing portion that presses both end portions of the pressurizing roller in the axial direction, and a second pressing portion that presses the central portion of the pressurizing roller in the axial direction. Board processing equipment. A preheating section for heating the substrate before being pressurized by the pressurizing roller is further provided.
The substrate processing apparatus according to claim 1, wherein the pressure roller and the support portion have a temperature control portion that adjusts its own temperature to a temperature corresponding to the heating temperature of the preheating portion. The substrate processing apparatus according to claim 1 or 2, wherein the pressurizing roller pressurizes a film formed on the substrate through a film. 1. The substrate processing apparatus according to any one of 3 to 3. The substrate processing apparatus according to any one of claims 1 to 4, further comprising a curing treatment unit for curing a film formed on the substrate after being pressurized by the pressure roller. The treatment liquid that forms a film on the substrate has ultraviolet curability and is curable.
The pressure roller pressurizes the film formed on the substrate through the film.
The substrate processing apparatus according to claim 5, wherein the curing processing unit exposes a film formed on the substrate in contact with the film with ultraviolet rays. The process of heating the substrate on which the film is formed by applying the treatment liquid, and
After the heating step, a step of sequentially pressurizing the film formed on the substrate by a pressurizing roller from one end to the other end of the substrate is included.
A substrate processing method in which the orientation of the substrate is changed after the pressurizing step, and the heating step and the pressurizing step are performed again . A computer-readable recording medium on which a program for causing a board processing apparatus to execute the board processing method according to claim 7 is recorded.

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