JP7022784B2 - Semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device.

In a semiconductor device having a built-in semiconductor element, a conduction support member that constitutes a conduction path to the semiconductor element and supports the semiconductor element is used. Patent Document 1 discloses an example of a conventional semiconductor device. In this semiconductor device, a lead made of metal is used as the conduction support member. As a means for conducting the semiconductor element and the lead, a plurality of wires made of Au or the like are used.

In the manufacturing process of the semiconductor device, the step of bonding the plurality of wires is executed. This bonding step is sequentially performed on the plurality of wires, and cannot be performed collectively on the plurality of wires. Therefore, the improvement of the manufacturing efficiency of the semiconductor device is hindered. Further, since the wire is relatively thin, it may be unintentionally cut or peeled off during the manufacturing process of the semiconductor device or when the semiconductor device is used. Further, when the semiconductor element is bonded to a heat radiating member called an island or the like, the semiconductor element and the heat radiating member are bonded via the bonding material. It is desired to improve the efficiency of this joining and to ensure the joining.

Japanese Unexamined Patent Publication No. 2014-7363

The present invention has been conceived under the above circumstances, and provides a semiconductor device capable of increasing manufacturing efficiency and more reliably joining the semiconductor element and the conduction connection member. That is the issue. Another object of the present invention is to provide a semiconductor device capable of increasing manufacturing efficiency and more reliably joining the semiconductor element and the heat radiating member.

The semiconductor device provided by the first aspect of the present invention supports a semiconductor element having a functional surface on which a functional circuit is formed and a back surface facing the opposite side to the functional surface, the semiconductor element, and the semiconductor. A semiconductor device comprising a conduction support member conductive to an element and a resin package covering the semiconductor element and at least a part of the conduction support member, wherein the semiconductor element is formed on the functional surface and described above. It has a functional surface side electrode having a functional surface side convex portion protruding in a direction in which the functional surface faces, and the functional surface side convex portion of the functional surface side electrode and the conduction support member are bonded by solid phase bonding. It is characterized by being joined.

In a preferred embodiment of the present invention, the functional surface side electrode has a base material layer in contact with the functional surface.

In a preferred embodiment of the invention, the substrate layer is made of Al.

In a preferred embodiment of the present invention, the functional surface side convex portion and the base material layer do not overlap each other in a plan view.

In a preferred embodiment of the present invention, the functional surface side electrode has a base layer laminated on the base material layer.

In a preferred embodiment of the present invention, the underlayer is made of any of Ti, W and Ta.

In a preferred embodiment of the present invention, the functional surface side electrode has a rewiring layer laminated on the base layer, and the functional surface side convex portion is formed on the rewiring layer. ..

In a preferred embodiment of the invention, the rewiring layer is made of Cu.

In a preferred embodiment of the invention, the rewiring layer is larger than the substrate layer in plan view.

In a preferred embodiment of the present invention, the functional surface side electrode has a bonding promoting layer located on the outermost surface layer.

In a preferred embodiment of the present invention, the bonding promoting layer of the functional surface side electrode contains at least one of Ni and Pd.

In a preferred embodiment of the present invention, the bonding promoting layer of the functional surface side electrode has a Ni layer laminated on the functional surface side convex portion and a Pd layer laminated on the Ni layer.

In a preferred embodiment of the present invention, the passivation film is provided with a passivation film that covers the functional surface and has a through hole for allowing the functional surface side electrode to reach the functional surface.

In a preferred embodiment of the invention, the passivation membrane is made of SiN.

In a preferred embodiment of the invention, the rewiring layer overlaps the passivation film in plan view.

In a preferred embodiment of the present invention, the functional surface side convex portion overlaps with the passivation film in a plan view.

In a preferred embodiment of the present invention, a protective film laminated on the passivation film is provided.

In a preferred embodiment of the invention, the protective film is made of polyimide.

In a preferred embodiment of the invention, the rewiring layer overlaps the protective film in plan view.

In a preferred embodiment of the present invention, the functional surface side convex portion overlaps with the protective film in a plan view.

In a preferred embodiment of the present invention, the functional surface side convex portion is made of Cu.

In a preferred embodiment of the invention, the conduction support member is a lead made of metal.

In a preferred embodiment of the invention, a portion of the lead protrudes from the resin package.

In a preferred embodiment of the present invention, the surface of the lead opposite to the portion joined to the functional surface side electrode is uneven.

In a preferred embodiment of the invention, the semiconductor device has the functional surface side electrodes.

In a preferred embodiment of the present invention, the functional surface side electrode has a plurality of the functional surface side convex portions.

In a preferred embodiment of the present invention, a heat radiating member bonded to the semiconductor element is further provided, and the semiconductor element has a back surface metal layer formed on the back surface of the semiconductor element. The back metal layer and the heat radiating member are joined by solid-phase bonding.

In a preferred embodiment of the present invention, a bonding promoting layer is laminated on the back surface metal layer.

In a preferred embodiment of the present invention, the bonding promoting layer of the back surface metal layer contains at least one of Ni and Pd.

In a preferred embodiment of the present invention, the heat radiating member is laminated with a bonding promoting layer.

In a preferred embodiment of the present invention, the bonding promoting layer of the heat radiating member contains at least one of Ni and Pd.

In a preferred embodiment of the present invention, the surface of the heat radiating member opposite to the portion joined to the back surface metal layer is uneven.

In a preferred embodiment of the present invention, the surface of the heat radiating member opposite to the portion joined to the back surface metal layer is exposed from the resin package.

The semiconductor device provided by the second aspect of the present invention supports a semiconductor element having a functional surface on which a functional circuit is formed and a back surface facing the opposite side to the functional surface, the semiconductor element, and the semiconductor. A semiconductor device including a conduction support member conducting conduction to an element and a resin package covering the semiconductor element and at least a part of the conduction support member, wherein the semiconductor element is a functional surface formed on the functional surface. The conduction support member has a side electrode, and the conduction support member has a conduction support member side convex portion protruding toward the functional surface side electrode, and the conduction support of the functional surface side electrode and the conduction support member. The member-side convex portion is characterized in that it is joined by solid-phase bonding.

In a preferred embodiment of the present invention, the functional surface side electrode has a base material layer in contact with the functional surface.

In a preferred embodiment of the invention, the substrate layer is made of Al.

In a preferred embodiment of the present invention, the convex portion on the conduction support member side and the base material layer do not overlap each other in a plan view.

In a preferred embodiment of the present invention, the functional surface side electrode has a base layer laminated on the base material layer.

In a preferred embodiment of the present invention, the underlayer is made of any of Ti, W and Ta.

In a preferred embodiment of the present invention, the functional surface side electrode has a rewiring layer laminated on the base layer.

In a preferred embodiment of the invention, the rewiring layer is made of Cu.

In a preferred embodiment of the invention, the rewiring layer is larger than the substrate layer in plan view.

In a preferred embodiment of the present invention, the functional surface side electrode has a bonding promoting layer located on the outermost surface layer.

In a preferred embodiment of the present invention, the bonding promoting layer of the functional surface side electrode contains at least one of Ni and Pd.

In a preferred embodiment of the present invention, the bonding promoting layer of the functional surface side electrode has a Ni layer located on the functional surface side and a Pd layer laminated on the Ni layer.

In a preferred embodiment of the present invention, the passivation film is provided with a passivation film that covers the functional surface and has a through hole for allowing the functional surface side electrode to reach the functional surface.

In a preferred embodiment of the invention, the passivation membrane is made of SiN.

In a preferred embodiment of the invention, the rewiring layer overlaps the passivation film in plan view.

In a preferred embodiment of the present invention, the convex portion on the conduction support member side overlaps with the passivation film in a plan view.

In a preferred embodiment of the present invention, a protective film laminated on the passivation film is provided.

In a preferred embodiment of the invention, the protective film is made of polyimide.

In a preferred embodiment of the invention, the rewiring layer overlaps the protective film in plan view.

In a preferred embodiment of the present invention, the convex portion on the conduction support member side overlaps with the protective film in a plan view.

In a preferred embodiment of the invention, the conduction support member is a lead made of metal.

In a preferred embodiment of the invention, a portion of the lead protrudes from the resin package.

In a preferred embodiment of the present invention, the surface of the lead opposite to the portion joined to the functional surface side electrode is uneven.

In a preferred embodiment of the present invention, the convex portion on the conduction support member side is composed of a portion having a thickness thicker than the peripheral portion.

In a preferred embodiment of the present invention, the convex portion on the conduction support member side has a through hole.

In a preferred embodiment of the present invention, the conduction support member side convex portion is formed by bending a part of the conduction support member.

In a preferred embodiment of the invention, the semiconductor device has the functional surface side electrodes.

In a preferred embodiment of the present invention, the functional surface side electrode is joined to a plurality of conduction support member side convex portions.

In a preferred embodiment of the present invention, a heat radiating member bonded to the semiconductor element is further provided, and the semiconductor element has a back surface metal layer formed on the back surface of the semiconductor element. The back metal layer and the heat radiating member are joined by solid-phase bonding.

In a preferred embodiment of the present invention, a bonding promoting layer is laminated on the back surface metal layer.

In a preferred embodiment of the present invention, the bonding promoting layer of the back surface metal layer contains at least one of Ni and Pd.

In a preferred embodiment of the present invention, the heat radiating member is laminated with a bonding promoting layer.

In a preferred embodiment of the present invention, the bonding promoting layer of the heat radiating member contains at least one of Ni and Pd.

In a preferred embodiment of the present invention, the surface of the heat radiating member opposite to the portion joined to the back surface metal layer is uneven.

In a preferred embodiment of the present invention, the surface of the heat radiating member opposite to the portion joined to the back surface metal layer is exposed from the resin package.

The semiconductor device provided by the third aspect of the present invention supports a semiconductor device having a functional surface on which a functional circuit is formed and a back surface facing the opposite side to the functional surface, the semiconductor element, and the semiconductor. A semiconductor device including a conduction support member conducting conduction to an element, a heat radiation member joined to the semiconductor element, and a resin package covering the semiconductor element, the conduction support member, and at least a part of the heat radiation member. The semiconductor element has a back surface metal layer formed on the back surface thereof, and the back surface metal layer of the semiconductor element and the heat radiating member are bonded by solid phase bonding. ..

In a preferred embodiment of the present invention, a bonding promoting layer is laminated on the back surface metal layer.

In a preferred embodiment of the present invention, the bonding promoting layer of the back surface metal layer contains at least one of Ni and Pd.

In a preferred embodiment of the present invention, the heat radiating member is laminated with a bonding promoting layer.

In a preferred embodiment of the present invention, the bonding promoting layer of the heat radiating member contains at least one of Ni and Pd.

In a preferred embodiment of the present invention, the surface of the heat radiating member opposite to the portion joined to the back surface metal layer is uneven.

In a preferred embodiment of the present invention, the semiconductor device has a functional surface side electrode formed on the functional surface.

In a preferred embodiment of the present invention, the functional surface-side electrode includes a functional surface-side convex portion that protrudes in a direction in which the functional surface faces, and the functional surface-side convex portion and the functional surface-side convex portion of the functional surface-side electrode. The conduction support member is joined by solid phase bonding.

In a preferred embodiment of the present invention, the conduction support member has a conduction support member-side convex portion that protrudes toward the functional surface-side electrode, and the functional surface-side electrode and the conduction support member are described. The convex portion on the conduction support member side is joined by solid phase bonding.

In a preferred embodiment of the present invention, the functional surface side electrode has a base material layer in contact with the functional surface.

In a preferred embodiment of the invention, the substrate layer is made of Al.

In a preferred embodiment of the present invention, the functional surface side electrode has a base layer laminated on the base material layer.

In a preferred embodiment of the present invention, the underlayer is made of any of Ti, W and Ta.

In a preferred embodiment of the present invention, the functional surface side electrode has a rewiring layer laminated on the base layer.

In a preferred embodiment of the invention, the rewiring layer is made of Cu.

In a preferred embodiment of the invention, the rewiring layer is larger than the substrate layer in plan view.

In a preferred embodiment of the present invention, the functional surface side electrode has a bonding promoting layer located on the outermost surface layer.

In a preferred embodiment of the present invention, the bonding promoting layer of the functional surface side electrode contains at least one of Ni and Pd.

In a preferred embodiment of the present invention, the passivation film is provided with a passivation film that covers the functional surface and has a through hole for allowing the functional surface side electrode to reach the functional surface.

In a preferred embodiment of the invention, the passivation membrane is made of SiN.

In a preferred embodiment of the invention, the rewiring layer overlaps the passivation film in plan view.

In a preferred embodiment of the present invention, a protective film laminated on the passivation film is provided.

In a preferred embodiment of the invention, the protective film is made of polyimide.

In a preferred embodiment of the invention, the rewiring layer overlaps the protective film in plan view.

In a preferred embodiment of the invention, the conduction support member is a lead made of metal.

In a preferred embodiment of the invention, a portion of the lead protrudes from the resin package.

In a preferred embodiment of the present invention, the surface of the lead opposite to the portion joined to the functional surface side electrode is uneven.

Other features and advantages of the invention will be more apparent by the detailed description given below with reference to the accompanying drawings.

It is a top view which shows the semiconductor device based on 1st Embodiment of a semi-invention. It is a bottom view which shows the semiconductor device of FIG. It is a front view which shows the semiconductor device of FIG. It is a side view which shows the semiconductor device of FIG. It is sectional drawing which follows the VV line of FIG. FIG. 3 is an enlarged cross-sectional view of a main part showing the semiconductor device of FIG. It is an enlarged sectional view of the main part which shows an example of the manufacturing method of the semiconductor device of FIG. It is an enlarged sectional view of the main part which shows an example of the manufacturing method of the semiconductor device of FIG. It is an enlarged sectional view of the main part which shows an example of the manufacturing method of the semiconductor device of FIG. It is an enlarged sectional view of the main part which shows an example of the manufacturing method of the semiconductor device of FIG. It is an enlarged sectional view of the main part which shows an example of the manufacturing method of the semiconductor device of FIG. It is an enlarged sectional view of the main part which shows an example of the manufacturing method of the semiconductor device of FIG. It is sectional drawing which shows an example of the manufacturing method of the semiconductor device of FIG. It is an enlarged sectional view of the main part which shows an example of the manufacturing method of the semiconductor device of FIG. It is a top view which shows the semiconductor device based on the 2nd Embodiment of a semi-invention. It is a bottom view which shows the semiconductor device of FIG. It is a front view which shows the semiconductor device of FIG. It is a side view which shows the semiconductor device of FIG. It is sectional drawing which follows the XIX-XIX line of FIG. FIG. 15 is an enlarged cross-sectional view of a main part showing the semiconductor device of FIG. FIG. 3 is an enlarged cross-sectional view of a main part showing a modified example of the semiconductor device of FIG. FIG. 3 is an enlarged cross-sectional view of a main part showing another modification of the semiconductor device of FIG. FIG. 3 is an enlarged cross-sectional view of a main part showing another modification of the semiconductor device of FIG. FIG. 3 is an enlarged cross-sectional view of a main part showing another modification of the semiconductor device of FIG. It is a top view which shows the semiconductor device based on the 3rd Embodiment of a semi-invention. It is a bottom view which shows the semiconductor device of FIG. It is a front view which shows the semiconductor device of FIG. It is a side view which shows the semiconductor device of FIG. FIG. 5 is a cross-sectional view taken along the line XXIX-XXIX of FIG. 25. FIG. 5 is an enlarged cross-sectional view of a main part showing the semiconductor device of FIG. 25. FIG. 5 is an enlarged cross-sectional view of a main part showing a modified example of the semiconductor device of FIG. 25.

Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

1 to 6 show a semiconductor device based on the first embodiment of the present invention. The semiconductor device A1 of the present embodiment includes leads 101 to 107, a semiconductor element 300, and a sealing resin 400.

FIG. 1 is a plan view showing the semiconductor device A1. FIG. 2 is a bottom view showing the semiconductor device A1. FIG. 3 is a front view showing the semiconductor device A1. FIG. 4 is a side view showing the semiconductor device A1. FIG. 5 is a cross-sectional view taken along the line VV of FIG. FIG. 6 is an enlarged cross-sectional view of a main part showing the semiconductor device A1.

Leads 101 to 107 are examples of conduction support members according to the present invention. Leads 101 to 107 form a conduction path between the semiconductor element 300 and the outside of the semiconductor device A1 and support the semiconductor element 300. Leads 101-107 are made of metal, preferably either Cu or Ni, or alloys thereof, 42 alloys, and the like. Further, a plating layer such as Ti, Ag, Pd, Au or the like may be provided on the surfaces of the leads 101 to 107. In this embodiment, the case where the leads 101 to 107 are made of Cu will be described as an example. The thickness of the leads 101 to 107 is not particularly limited, but is, for example, 50 μm to 500 μm, preferably 100 μm to 150 μm.

Each of the leads 101 to 107 has a facing portion 110 and a terminal portion 120. The facing portion 110 overlaps with the semiconductor element 300 in a plan view, and is a portion facing the functional surface side electrode 330 of the semiconductor element 300, which will be described later. The terminal portion 120 is exposed from the sealing resin 400 and is used for mounting the semiconductor device A1 on a circuit board or the like. As shown in FIGS. 3 and 5, the leads 101 to 107 have a bent portion between the facing portion 110 and the terminal portion 120. Further, the lead 101 has two terminal portions 120.

As shown in FIG. 5, the facing portion 110 has a joint surface 113 and a back surface 114. The bonding surface 113 is a surface facing the functional surface side electrode 330 of the semiconductor element 300, and is bonded to the functional surface side electrode 330. The back surface 114 is a surface facing the opposite side to the joint surface 113. As shown in FIGS. 2 and 6, the back surface 114 of the facing portion 110 has an uneven shape. The depth of this uneven portion is, for example, about 20 μm.

In the present embodiment, as shown in FIG. 1, the terminal portions 120 of the lead 101, the lead 104, and the lead 106 project to the left in the figure. Further, the lead 102, the lead 103, the lead 105, and the terminal portion 120 of the lead 107 project to the right in the drawing. The facing portion 110 of the lead 101 is relatively large. The facing portions 110 of the leads 102 and the leads 103 are smaller than the facing portions 110 of the leads 101, and are arranged in the y direction. The facing portion 110 of the lead 101 and the facing portion 110 of the lead 102 and the lead 103 are aligned in the x direction. The lead 104, the lead 105, the lead 106, and the facing portion 110 of the lead 107 are relatively small. Opposing portions 110 of the leads 106 and the leads 107 are arranged side by side in the x direction toward the center in the x direction. The facing portions 110 of the lead 104 and the lead 105 are arranged on both sides in the x direction with the facing portion 110 of the lead 106 and the lead 107 interposed therebetween.

The semiconductor element 300 is an element that exhibits the function of the semiconductor device A1, and the type thereof is not particularly limited, but various elements such as a transistor, a diode, and an LSI can be selected. As shown in FIG. 5, the semiconductor element 300 has a functional surface 310 and a back surface 320. The back surface 320 is a surface on which a functional circuit (not shown) that realizes the function of the semiconductor element 300 is formed. The back surface 320 is a surface facing the opposite side to the functional surface 310. The semiconductor element 300 is manufactured from a wafer made of, for example, Si.

The semiconductor element 300 has a plurality of functional surface side electrodes 330, a passivation film 340, and a protective film 350.

The plurality of functional surface side electrodes 330 are formed on the functional surface 310 and are electrically connected to the leads 101 to 107, respectively. In the present embodiment, seven functional surface side electrodes 330 are formed corresponding to the leads 101 to 107. Although these functional surface side electrodes 330 are different in size and arrangement, they have the same basic configuration.

In the present embodiment, as shown in FIG. 1, the functional surface side electrode 330 facing the facing portion 110 of the lead 101 is relatively large and has a long rectangular shape in a plan view with the y direction as the longitudinal direction. The two functional surface side electrodes 330 facing the lead 102 and the facing portion 110 of the lead 103 have a substantially square shape in a plan view and are arranged in the y direction. The functional surface side electrode 330 facing the facing portion 110 of the lead 101 and the two functional surface side electrodes 330 facing the facing portion 110 of the lead 102 and the lead 103 are arranged in the x direction. The four functional surface-side electrodes 330 facing the lead 104, the lead 105, the lead 106, and the facing portion 110 of the lead 107 are relatively small and have a substantially square shape in a plan view. Two functional surface side electrodes 330 facing the lead 106 and the facing portion 110 of the lead 107 are arranged side by side in the x direction near the center in the x direction. The two functional surface side electrodes 330 facing the lead 104 and the facing portion 110 of the lead 105 are arranged on both sides in the x direction with the facing portion 110 of the lead 106 and the lead 107 interposed therebetween.

As shown in FIGS. 1, 5 and 6, the functional surface side electrode 330 has a base material layer 331, a base layer 332, a rewiring layer 333, a functional surface side convex portion 334, and a bonding promotion layer 335. ..

The base material layer 331 is in contact with the functional surface 310 and is a portion of the functional surface 310 that directly conducts to an appropriate position in the functional circuit. The functional surface 310 is made of, for example, Al. The thickness of the base material layer 331 is, for example, 0.1 μm to 10 μm.

Here, the passivation film 340 and the protective film 350 will be described. The passivation film 340 is for preventing an excessive force from being applied to Si, which is the main body of the semiconductor element 300, and is made of an insulating material such as SiN. The passivation film 340 has a thickness of, for example, 200 nm to 3 μm. The protective film 350 is laminated on the passivation film 340 to prevent an excessive force from being applied to Si, which is the main body of the semiconductor element 300, and to facilitate the formation of the rewiring layer 333. Is. The protective film 350 is made of an insulating material such as polyimide. The thickness of the protective film 350 is, for example, about 5 μm.

A through hole 341 is formed in the passivation film 340. The through hole 341 is provided to expose the base material layer 331 of the functional surface side electrode 330. In the present embodiment, the peripheral portion of the passivation film 340 with the through hole 341 covers the edge of the base material layer 331. A through hole 351 is formed in the protective film 350. The through hole 351 coincides with the through hole 341 in a plan view, and is provided to expose the base material layer 331 of the functional surface side electrode 330.

Returning to the description of the functional surface side electrode 330. The base layer 332 is a layer forming a base for forming the rewiring layer 333. The base layer 332 matches the shape of the functional surface side electrode 330 in a plan view. That is, the base layer 332 covers the portion of the base layer 331 exposed from the passivation film 340 and the protective film 350, the through hole 341 of the passivation film 340, the through hole 351 of the protective film 350, and the appropriate place of the protective film 350. There is. The base layer 332 is made of, for example, Ti, TiW, Ta, or the like. The thickness of the base layer 332 is about 100 nm.

The rewiring layer 333 is a layer that is the main component of the functional surface side electrode 330, and is larger than the base material layer 331 in a plan view. The material of the rewiring layer 333 is not particularly limited, but in the present embodiment, it is made of Cu. The thickness of the rewiring layer 333 is, for example, about 10 μm.

The functional surface side convex portion 334 is formed on the rewiring layer 333, and projects in the direction in which the functional surface 310 faces. The material of the functional surface side convex portion 334 is not particularly limited as long as it is a conductive material, but in the present embodiment, it is Cu. The shape of the convex portion 334 on the functional surface side is not particularly limited, but in the present embodiment, it is a cylindrical shape. The size of the functional surface side convex portion 334 is 25 μm to 200 μm in diameter and 10 μm to 500 μm in height. In a plan view, the functional surface side convex portion 334 does not overlap with the base material layer 331 and is arranged at a position avoiding the base material layer 331. Further, the functional surface side convex portion 334 overlaps with the passivation film 340 and the protective film 350 in a plan view.

Further, in the present embodiment, as shown in FIG. 1, a plurality of functional surface side convex portions 334 are formed on the three functional surface side electrodes 330 facing the facing portions 110 of the lead 101, the lead 102, and the lead 103. Has been done. Eight functional surface-side convex portions 334 having 4 rows and 2 columns are formed on the functional surface-side convex portion 334 facing the facing portion 110 of the lead 101. The functional surface side electrodes 330 facing the facing portions 110 of the leads 102 and the leads 103 are formed with four functional surface side convex portions 334 in 2 rows and 2 columns. The functional surface side electrodes 330 facing the facing portions 110 of the leads 104 to 107 are formed with one functional surface side convex portion 334.

The bonding promotion layer 335 constitutes the outermost layer of the functional surface side electrode 330, and in the present embodiment, covers the functional surface side convex portion 334 and the rewiring layer 333. The bonding promoting layer 335 is for strengthening the bonding between the functional surface side electrode 330 and the facing portion 110 of the leads 101 to 107. The bonding promotion layer 335 contains at least one of Ni and Pd, and in the present embodiment, the Ni layer directly covering the functional surface side convex portion 334 and the rewiring layer 333 is laminated on the Ni layer. It consists of a Pd layer. The thickness of the bonding promoting layer 335 is, for example, about 100 nm to 10 μm. Further, as the material of the bonding promoting layer 335, Cu, Al, Ti, Au or the like can be appropriately adopted in addition to the above.

The functional surface side electrode 330 and the facing portion 110 of the leads 101 to 107 are joined by solid phase bonding. More specifically, the top surface of the convex portion 334 on the functional surface side and the joint surface 113 of the facing portion 110 are solid-phase bonded. In this embodiment, the joining promotion layer 335 is interposed between the functional surface side convex portion 334 and the joining surface 113 of the facing portion 110. In addition to or instead of forming the bonding promoting layer 335 on the functional surface side electrode 330, a bonding promoting layer may be formed on the bonding surface 113 of the facing portion 110.

The sealing resin 400 covers the entire semiconductor element 300 and the portions of the leads 101 to 107 excluding the terminal portion 120. The sealing resin 400 is made of an insulating material, and in this embodiment, is made of, for example, a black epoxy resin. In the present embodiment, the 400 is also filled between the bonding surface 113 of the facing portion 110 and the bonding promoting layer 335 of the functional surface side electrode 330 in the region avoiding the functional surface side convex portion 334.

Next, an example of the manufacturing method of the semiconductor device A1 will be described below.

First, as shown in FIG. 7, the base material layer 331 is formed on the semiconductor element 300. The base material layer 331 conducts at an appropriate position in a functional circuit (not shown) formed on the functional surface 310 of the semiconductor element 300. The base material layer 331 is patterned by plating with Al, for example. The thickness of the base material layer 331 is, for example, 0.1 μm to 10 μm.

Then, as shown in FIG. 8, the passivation film 340 and the protective film 350 are formed. The formation of the passivation film 340 and the protective film 350 forms, for example, a SiN film and a polyimide film on the entire surface of the functional surface 310. The thickness of the SiN film is, for example, 200 nm to 3 μm. The thickness of the polyimide film is, for example, about 5 μm. Then, through patterning such as etching forms through holes 341 and through holes 351 that expose the base material layer 331 to the SiN film and the polyimide film. As a result, the passivation film 340 and the protective film 350 are obtained.

Next, as shown in FIG. 9, the base layer 332 is formed. Specifically, Ti having a thickness of about 100 nm so as to cover the portion of the substrate layer 331 exposed from the passivation film 340 and the protective film 350, the through hole 341 and the through hole 351 and the protective film 350. A film composed of TiW, Ta, etc. is formed. The film forming method is not particularly limited, but CVD, sputtering, or the like can be used. The shape, size, and arrangement of the base layer 332 correspond to the shape, size, and arrangement of the functional surface side electrode 330 to be formed.

Then, as shown in FIG. 10, the rewiring layer 333 is formed. The rewiring layer 333 is formed, for example, by electrolytic plating using the base layer 332. The rewiring layer 333 is made of, for example, Cu, and its thickness is about 10 μm. The shape, size and arrangement of the rewiring layer 333 are substantially the same as those of the base layer 332.

Next, as shown in FIG. 11, the functional surface side convex portion 334 is formed. The functional surface side convex portion 334 is formed, for example, by combining plating or sputtering and patterning. For example, a mask having an opening matching the plan view shape of the convex portion 334 on the functional surface side is prepared, and Cu is attached by plating or sputtering using this mask. Alternatively, the functional surface side convex portion 334 is formed by subjecting the Cu film formed by plating or sputtering to an etching treatment or the like.

Then, as shown in FIG. 12, the bonding promoting layer 335 is formed. The bonding promoting layer 335 is formed by sequentially forming a Ni layer and a Pd layer by plating, for example, so as to cover the rewiring layer 333 and the functional surface side convex portion 334. The thickness of the bonding promoting layer 335 is, for example, 100 nm to 10 μm.

Next, as shown in FIG. 13, the bonding surface 113 of the facing portions 110 of the leads 101 to 107 and the plurality of functional surface side electrodes 330 of the semiconductor element 300 are bonded. In this joining, for example, the semiconductor element 300 is fixed to the table 801 and the jig 802 is pressed against the back surface 114 of the facing portions 110 of the leads 101 to 107. A plurality of protrusions are formed on the lower surface of the jig 802 in the drawing. The jig 802 is vibrated in the xy plane while a predetermined pressing force is applied from the jig 802 to the leads 101 to 107. This vibration has a lower frequency than, for example, ultrasonic waves, for example, 100 Hz or less, specifically 50 Hz to 60 Hz. As a result, as shown in FIG. 14, the functional surface side convex portion 334 and the facing portion 110 are solid-phase bonded with the bonding promoting layer 335 interposed therebetween. Further, the back surface 114 of the facing portion 110 has an uneven shape as a trace of the jig 802 being pressed.

After that, the semiconductor device A1 is obtained by going through steps such as forming the sealing resin 400.

Next, the operation of the semiconductor device A1 will be described.

According to the present embodiment, the convex portion 334 on the functional surface side and the facing portion 110 of the leads 101 to 107 are joined by solid phase bonding. Solid phase bonding is a bonding form in which both are directly bonded, and does not require a bonding medium such as a wire or solder that is interposed between the two. In addition, solid-phase bonding between all the functional surface-side convex portions 334 and the facing portions 110 of the leads 101 to 107 can be carried out collectively. This makes it possible to improve the manufacturing efficiency of the semiconductor device A1. Further, it is possible to increase the joint strength between the convex portion 334 on the functional surface side and the facing portion 110 of the leads 101 to 107.

By providing the functional surface side convex portion 334, it is possible to reduce the joint area between the functional surface side electrode 330 and the facing portion 110 of the leads 101 to 107. As a result, the magnitude of the force to be applied in order to obtain a predetermined bonding pressure at the time of solid phase bonding can be further reduced. This makes it possible to prevent the semiconductor element 300 from being unintentionally damaged. Further, by providing the convex portion 334 on the functional surface side, the sealing resin 400 can be reliably filled between the functional surface 310 of the semiconductor element 300 and the joint surface 113 of the facing portions 110 of the leads 101 to 107. Is. As a result, it is possible to more reliably insulate the portion to be insulated in the semiconductor device A1.

Since the convex portion 334 on the functional surface side does not overlap with the base material layer 331 in a plan view, it is possible to prevent an excessive load of force at the time of solid phase bonding on Si which is the main body of the semiconductor element 300. Further, by overlapping the functional surface side convex portion 334 with the passivation film 340 and the protective film 350 in a plan view, the force at the time of solid phase bonding can be absorbed by the passivation film 340 and the protective film 350.

By providing the bonding promoting layer 335, solid phase bonding between the functional surface side convex portion 334 and the facing portion 110 can be performed more reliably.

15-31 show other embodiments of the present invention. In these figures, the same or similar elements as those in the above embodiment are designated by the same reference numerals as those in the above embodiment.

15 to 20 show a semiconductor device based on the second embodiment of the present invention. The semiconductor device A2 of the present embodiment includes leads 101 to 107, a semiconductor element 300, and a sealing resin 400.

FIG. 15 is a plan view showing the semiconductor device A2. FIG. 16 is a bottom view showing the semiconductor device A2. FIG. 17 is a front view showing the semiconductor device A2. FIG. 18 is a side view showing the semiconductor device A2. FIG. 19 is a cross-sectional view taken along the line XIX-XIX of FIG. FIG. 20 is an enlarged cross-sectional view of a main part showing the semiconductor device A2.

Leads 101 to 107 are examples of conduction support members according to the present invention. Leads 101 to 107 form a conduction path between the semiconductor element 300 and the outside of the semiconductor device A2, and support the semiconductor element 300. Leads 101-107 are made of metal, preferably either Cu or Ni, or alloys thereof, 42 alloys, and the like. Further, a plating layer such as Ti, Ag, Pd, Au or the like may be provided on the surfaces of the leads 101 to 107. In this embodiment, the case where the leads 101 to 107 are made of Cu will be described as an example. The thickness of the leads 101 to 107 is not particularly limited, but is, for example, 50 μm to 500 μm, preferably 100 μm to 150 μm.

Each of the leads 101 to 107 has a facing portion 110 and a terminal portion 120. The facing portion 110 overlaps with the semiconductor element 300 in a plan view, and is a portion facing the functional surface side electrode 330 of the semiconductor element 300, which will be described later. The terminal portion 120 is exposed from the sealing resin 400 and is used for mounting the semiconductor device A2 on a circuit board or the like. As shown in FIGS. 17 and 19, the leads 101 to 107 have a bent portion between the facing portion 110 and the terminal portion 120. Further, the lead 101 has two terminal portions 120.

As shown in FIG. 19, the facing portion 110 has a joint surface 113 and a back surface 114. The bonding surface 113 is a surface facing the functional surface side electrode 330 of the semiconductor element 300. In the present embodiment, the conduction support member side convex portion 111 is formed on the joint surface 113 of the facing portion 110. The convex portion 111 on the conduction support member side projects from the joint surface 113 toward the functional surface side electrode 330. The shape of the convex portion 111 on the conduction support member side is not particularly limited, but in the present embodiment, the convex portion 111 on the conduction support member side has a cylindrical shape. The size of the convex portion 111 on the conduction support member side is, for example, a diameter of 25 μm to 200 μm and a height of 10 μm to 500 μm. Such a conduction support member side convex portion 111 can be formed by, for example, etching. The back surface 114 is a surface facing the opposite side to the joint surface 113. As shown in FIGS. 16 and 20, the back surface 114 of the facing portion 110 has an uneven shape. The depth of this uneven portion is, for example, about 20 μm.

In the present embodiment, as shown in FIG. 15, the terminal portions 120 of the lead 101, the lead 104, and the lead 106 project to the left in the figure. Further, the lead 102, the lead 103, the lead 105, and the terminal portion 120 of the lead 107 project to the right in the drawing. The facing portion 110 of the lead 101 is relatively large. The facing portions 110 of the leads 102 and the leads 103 are smaller than the facing portions 110 of the leads 101, and are arranged in the y direction. The facing portion 110 of the lead 101 and the facing portion 110 of the lead 102 and the lead 103 are aligned in the x direction. The lead 104, the lead 105, the lead 106, and the facing portion 110 of the lead 107 are relatively small. Opposing portions 110 of the leads 106 and the leads 107 are arranged side by side in the x direction toward the center in the x direction. The facing portions 110 of the lead 104 and the lead 105 are arranged on both sides in the x direction with the facing portion 110 of the lead 106 and the lead 107 interposed therebetween.

The semiconductor element 300 is an element that exhibits the function of the semiconductor device A2, and the type thereof is not particularly limited, but various elements such as a transistor, a diode, and an LSI can be selected. As shown in FIG. 19, the semiconductor element 300 has a functional surface 310 and a back surface 320. The back surface 320 is a surface on which a functional circuit (not shown) that realizes the function of the semiconductor element 300 is formed. The back surface 320 is a surface facing the opposite side to the functional surface 310. The semiconductor element 300 is manufactured from a wafer made of, for example, Si.

The semiconductor element 300 has a plurality of functional surface side electrodes 330, a passivation film 340, and a protective film 350.

The plurality of functional surface side electrodes 330 are formed on the functional surface 310 and are electrically connected to the leads 101 to 107, respectively. In the present embodiment, seven functional surface side electrodes 330 are formed corresponding to the leads 101 to 107. Although these functional surface side electrodes 330 are different in size and arrangement, they have the same basic configuration.

In the present embodiment, as shown in FIG. 15, the functional surface side electrode 330 facing the facing portion 110 of the lead 101 is relatively large and has a long rectangular shape in a plan view with the y direction as the longitudinal direction. The two functional surface side electrodes 330 facing the lead 102 and the facing portion 110 of the lead 103 have a substantially square shape in a plan view and are arranged in the y direction. The functional surface side electrode 330 facing the facing portion 110 of the lead 101 and the two functional surface side electrodes 330 facing the facing portion 110 of the lead 102 and the lead 103 are arranged in the x direction. The four functional surface-side electrodes 330 facing the lead 104, the lead 105, the lead 106, and the facing portion 110 of the lead 107 are relatively small and have a substantially square shape in a plan view. Two functional surface side electrodes 330 facing the lead 106 and the facing portion 110 of the lead 107 are arranged side by side in the x direction near the center in the x direction. The two functional surface side electrodes 330 facing the lead 104 and the facing portion 110 of the lead 105 are arranged on both sides in the x direction with the facing portion 110 of the lead 106 and the lead 107 interposed therebetween.

As shown in FIGS. 15, 19 and 20, the functional surface side electrode 330 has a base material layer 331, a base layer 332, a rewiring layer 333, and a bonding promotion layer 335.

The base material layer 331 is in contact with the functional surface 310 and is a portion of the functional surface 310 that directly conducts to an appropriate position in the functional circuit. The functional surface 310 is made of, for example, Al. The thickness of the base material layer 331 is, for example, 0.1 μm to 10 μm.

Here, the passivation film 340 and the protective film 350 will be described. The passivation film 340 is for preventing an excessive force from being applied to Si, which is the main body of the semiconductor element 300, and is made of an insulating material such as SiN. The passivation film 340 has a thickness of, for example, 200 nm to 3 μm. The protective film 350 is laminated on the passivation film 340 to prevent an excessive force from being applied to Si, which is the main body of the semiconductor element 300, and to facilitate the formation of the rewiring layer 333. Is. The protective film 350 is made of an insulating material such as polyimide. The thickness of the protective film 350 is, for example, about 5 μm.

A through hole 341 is formed in the passivation film 340. The through hole 341 is provided to expose the base material layer 331 of the functional surface side electrode 330. In the present embodiment, the peripheral portion of the passivation film 340 with the through hole 341 covers the edge of the base material layer 331. A through hole 351 is formed in the protective film 350. The through hole 351 coincides with the through hole 341 in a plan view, and is provided to expose the base material layer 331 of the functional surface side electrode 330.

Returning to the description of the functional surface side electrode 330. The base layer 332 is a layer forming a base for forming the rewiring layer 333. The base layer 332 matches the shape of the functional surface side electrode 330 in a plan view. That is, the base layer 332 covers the portion of the base layer 331 exposed from the passivation film 340 and the protective film 350, the through hole 341 of the passivation film 340, the through hole 351 of the protective film 350, and the appropriate place of the protective film 350. There is. The base layer 332 is made of, for example, Ti, TiW, Ta, or the like. The thickness of the base layer 332 is about 100 nm.

The rewiring layer 333 is a layer that is the main component of the functional surface side electrode 330, and is larger than the base material layer 331 in a plan view. The material of the rewiring layer 333 is not particularly limited, but in the present embodiment, it is made of Cu. The thickness of the rewiring layer 333 is, for example, about 10 μm.

In a plan view, the convex portion 111 on the conduction support member side does not overlap with the base material layer 331 and is arranged at a position avoiding the base material layer 331. Further, the convex portion 111 on the conduction support member side overlaps the passivation film 340 and the protective film 350 in a plan view.

Further, in the present embodiment, as shown in FIG. 15, a plurality of conduction support member side convex portions 111 are formed on the facing portions 110 of the lead 101, the lead 102, and the lead 103. Eight conduction support member-side convex portions 111 in 4 rows and 2 columns are formed on the facing portion 110 of the lead 101. The lead 102 and the facing portion 110 of the lead 103 are formed with four conduction support member-side convex portions 111 in two rows and two columns. Each of the facing portions 110 of the leads 104 to 107 is formed with a convex portion 111 on the side of the conduction support member.

The bonding promotion layer 335 constitutes the outermost layer of the functional surface side electrode 330, and in the present embodiment, covers the rewiring layer 333. The bonding promotion layer 335 is for strengthening the bonding between the functional surface side electrode 330 and the conduction support member side convex portion 111 of the facing portions 110 of the leads 101 to 107. The bonding promoting layer 335 contains at least one of Ni and Pd, and in the present embodiment, it is composed of a Ni layer that directly covers the rewiring layer 333 and a Pd layer laminated on the Ni layer. The thickness of the bonding promoting layer 335 is, for example, about 100 nm to 10 μm. Further, as the material of the bonding promoting layer 335, Cu, Al, Ti, Au or the like can be appropriately adopted in addition to the above.

The functional surface side electrode 330 and the facing portion 110 of the leads 101 to 107 are joined by solid phase bonding. More specifically, the rewiring layer 333 of the functional surface side electrode 330 and the conduction support member side convex portion 111 of the facing portion 110 are solid-phase bonded. In this embodiment, the joining promotion layer 335 is interposed between the rewiring layer 333 and the conduction support member side convex portion 111 of the facing portion 110. In addition to or instead of forming the bonding promoting layer 335 on the functional surface side electrode 330, a bonding promoting layer may be formed on the conduction support member side convex portion 111 of the facing portion 110.

The sealing resin 400 covers the entire semiconductor element 300 and the portions of the leads 101 to 107 excluding the terminal portion 120. The sealing resin 400 is made of an insulating material, and in this embodiment, is made of, for example, a black epoxy resin. In the present embodiment, the 400 is also filled between the joining surface 113 of the facing portion 110 and the joining promoting layer 335 of the functional surface side electrode 330 in the region avoiding the conduction support member side convex portion 111.

According to the present embodiment, the functional surface side electrode 330 and the conduction support member side convex portion 111 of the facing portions 110 of the leads 101 to 107 are joined by solid phase bonding. Solid phase bonding is a bonding form in which both are directly bonded, and does not require a bonding medium such as a wire or solder that is interposed between the two. Further, it is possible to collectively perform solid phase bonding between all the functional surface side electrodes 330 and the conduction support member side convex portion 111 of the facing portions 110 of the leads 101 to 107. This makes it possible to improve the manufacturing efficiency of the semiconductor device A2. Further, the bonding strength between the functional surface side electrode 330 and the facing portion 110 of the leads 101 to 107 can be increased.

By providing the convex portion 111 on the conduction support member side, it is possible to reduce the joint area between the functional surface side electrode 330 and the facing portion 110 of the leads 101 to 107. As a result, the magnitude of the force to be applied in order to obtain a predetermined bonding pressure at the time of solid phase bonding can be further reduced. This makes it possible to prevent the semiconductor element 300 from being unintentionally damaged. Further, by providing the convex portion 111 on the conduction support member side, the sealing resin 400 can be reliably filled between the functional surface 310 of the semiconductor element 300 and the joint surface 113 of the facing portions 110 of the leads 101 to 107. It is possible. As a result, it is possible to more reliably insulate the portion to be insulated in the semiconductor device A2.

Since the convex portion 111 on the conduction support member side does not overlap with the base material layer 331 in a plan view, it is possible to prevent an excessive load of force at the time of solid phase bonding on Si which is the main body of the semiconductor element 300. Further, by overlapping the conduction support member side convex portion 111 with the passivation film 340 and the protective film 350 in a plan view, the force at the time of solid phase bonding can be absorbed by the passivation film 340 and the protective film 350.

By providing the bonding promoting layer 335, solid phase bonding between the functional surface side convex portion 334 and the facing portion 110 can be performed more reliably.

21 to 24 show a plurality of modified examples of the semiconductor device A2.

In the modified example shown in FIG. 21, a through hole 112 is formed in the convex portion 111 on the conduction support member side. The through hole 112 penetrates the conduction support member side convex portion 111 in the z direction. As a result, the portion of the convex portion 111 on the conduction support member side that is joined to the functional surface side electrode 330 has an annular shape.

Even with such a modification, it is possible to improve the manufacturing efficiency of the semiconductor device A2 and ensure the bonding. Further, by providing the through hole 112, the contact area between the convex portion 111 on the conduction support member side and the electrode 330 on the functional surface side is further reduced. As a result, the force applied to the semiconductor element 300 at the time of solid phase bonding can be further reduced.

In the modified examples shown in FIGS. 22 and 23, the conduction support member side convex portion 111 is formed by bending a part of the facing portion 110. In the modified example shown in FIG. 22, a part of the facing portion 110 is folded back in a U shape to form a convex portion 111 on the conduction support member side. In the modified example shown in FIG. 23, the conduction support member side convex portion 111 is formed by bending a part of the facing portion 110 into a crank shape.

Even with such a modification, it is possible to improve the manufacturing efficiency of the semiconductor device A2 and ensure the bonding.

In the modified example shown in FIG. 24, the rewiring layer 333 of the functional surface side electrode 330 of the semiconductor element 300 is not formed. Further, the convex portion 111 on the conduction support member side of the facing portion 110 is arranged at a position overlapping with the base material layer 331 in a plan view.

Even with such a modification, it is possible to improve the manufacturing efficiency of the semiconductor device A2 and ensure the bonding.

25 to 30 show a semiconductor device based on the third embodiment of the present invention. The semiconductor device A3 of the present embodiment includes leads 101 to 107, a heat radiating member 200, a semiconductor element 300, and a sealing resin 400.

FIG. 25 is a plan view showing the semiconductor device A3. FIG. 26 is a bottom view showing the semiconductor device A3. FIG. 27 is a front view showing the semiconductor device A3. FIG. 28 is a side view showing the semiconductor device A3. FIG. 29 is a cross-sectional view taken along the line XXIX-XXIX of FIG. 25. FIG. 30 is an enlarged cross-sectional view of a main part showing the semiconductor device A3.

Leads 101 to 107 are examples of conduction support members according to the present invention. Leads 101 to 107 form a conduction path between the semiconductor element 300 and the outside of the semiconductor device A3, and support the semiconductor element 300. Leads 101-107 are made of metal, preferably either Cu or Ni, or alloys thereof, 42 alloys, and the like. Further, a plating layer such as Ti, Ag, Pd, Au or the like may be provided on the surfaces of the leads 101 to 107. In this embodiment, the case where the leads 101 to 107 are made of Cu will be described as an example. The thickness of the leads 101 to 107 is not particularly limited, but is, for example, 50 μm to 500 μm, preferably 100 μm to 150 μm.

Each of the leads 101 to 107 has a facing portion 110 and a terminal portion 120. The facing portion 110 overlaps with the semiconductor element 300 in a plan view, and is a portion facing the functional surface side electrode 330 of the semiconductor element 300, which will be described later. The terminal portion 120 is exposed from the sealing resin 400 and is used for mounting the semiconductor device A3 on a circuit board or the like. As shown in FIGS. 27 and 29, the leads 101 to 107 have a bent portion between the facing portion 110 and the terminal portion 120. Further, the lead 101 has two terminal portions 120.

As shown in FIG. 29, the facing portion 110 has a joint surface 113 and a back surface 114. The bonding surface 113 is a surface facing the functional surface side electrode 330 of the semiconductor element 300, and is bonded to the functional surface side electrode 330. The back surface 114 is a surface facing the opposite side to the joint surface 113. As shown in FIGS. 26 and 30, the back surface 114 of the facing portion 110 has an uneven shape. The depth of this uneven portion is, for example, about 20 μm.

In the present embodiment, as shown in FIG. 25, the terminal portions 120 of the lead 101, the lead 104, and the lead 106 project to the left in the figure. Further, the lead 102, the lead 103, the lead 105, and the terminal portion 120 of the lead 107 project to the right in the drawing. The facing portion 110 of the lead 101 is relatively large. The facing portions 110 of the leads 102 and the leads 103 are smaller than the facing portions 110 of the leads 101, and are arranged in the y direction. The facing portion 110 of the lead 101 and the facing portion 110 of the lead 102 and the lead 103 are aligned in the x direction. The lead 104, the lead 105, the lead 106, and the facing portion 110 of the lead 107 are relatively small. Opposing portions 110 of the leads 106 and the leads 107 are arranged side by side in the x direction toward the center in the x direction. The facing portions 110 of the lead 104 and the lead 105 are arranged on both sides in the x direction with the facing portion 110 of the lead 106 and the lead 107 interposed therebetween.

The heat radiating member 200 is bonded to the semiconductor element 300 and is for promoting heat radiating from the semiconductor element 300. The heat radiating member 200 is made of metal, preferably either Cu or Ni, or an alloy thereof, 42 alloys, or the like. Further, a plating layer such as Ti, Ag, Pd, Au or the like may be provided on the surface of the heat radiating member 200. The thickness of the heat radiating member 200 is not particularly limited, but is, for example, 50 μm to 500 μm, preferably 100 μm to 150 μm. In the present embodiment, the case where the heat radiating member 200 is made of Cu and is formed together with the leads 101 to 107 will be described as an example. In this case, in the manufacturing process of the semiconductor device A3, the leads 101 to 107 and the heat radiating member 200 are formed from the same plate-shaped member. Further, in order to realize an arrangement in which the leads 101 to 107 and the heat radiating member 200 face each other with the semiconductor element 300 interposed therebetween, the leads 101 to 107 are 180 ° around the rotation axis extending along the y-axis with respect to the heat radiating member 200. A method of rotating can be adopted.

As shown in FIGS. 29 and 30, the heat radiating member 200 has a joint surface 210 and a back surface 220. The bonding surface 210 is bonded to the semiconductor element 300. The back surface 220 is a surface facing the opposite side to the joint surface 210. In this embodiment, the back surface 220 is exposed from the sealing resin 400. Further, as shown in FIGS. 25 and 30, the back surface 220 has an uneven shape. The depth of this uneven portion is, for example, about 20 μm.

The semiconductor element 300 is an element that exhibits the function of the semiconductor device A3, and the type thereof is not particularly limited, but various elements such as a transistor, a diode, and an LSI can be selected. As shown in FIG. 29, the semiconductor element 300 has a functional surface 310 and a back surface 320. The back surface 320 is a surface on which a functional circuit (not shown) that realizes the function of the semiconductor element 300 is formed. The back surface 320 is a surface facing the opposite side to the functional surface 310. The semiconductor element 300 is manufactured from a wafer made of, for example, Si.

The semiconductor element 300 has a plurality of functional surface side electrodes 330, a passivation film 340, a protective film 350, a back surface metal layer 360, and a bonding promotion layer 361.

The plurality of functional surface side electrodes 330 are formed on the functional surface 310 and are electrically connected to the leads 101 to 107, respectively. In the present embodiment, seven functional surface side electrodes 330 are formed corresponding to the leads 101 to 107. Although these functional surface side electrodes 330 are different in size and arrangement, they have the same basic configuration.

In the present embodiment, as shown in FIG. 25, the functional surface side electrode 330 facing the facing portion 110 of the lead 101 is relatively large and has a long rectangular shape in a plan view with the y direction as the longitudinal direction. The two functional surface side electrodes 330 facing the lead 102 and the facing portion 110 of the lead 103 have a substantially square shape in a plan view and are arranged in the y direction. The functional surface side electrode 330 facing the facing portion 110 of the lead 101 and the two functional surface side electrodes 330 facing the facing portion 110 of the lead 102 and the lead 103 are arranged in the x direction. The four functional surface-side electrodes 330 facing the lead 104, the lead 105, the lead 106, and the facing portion 110 of the lead 107 are relatively small and have a substantially square shape in a plan view. Two functional surface side electrodes 330 facing the lead 106 and the facing portion 110 of the lead 107 are arranged side by side in the x direction near the center in the x direction. The two functional surface side electrodes 330 facing the lead 104 and the facing portion 110 of the lead 105 are arranged on both sides in the x direction with the facing portion 110 of the lead 106 and the lead 107 interposed therebetween.

As shown in FIGS. 25, 29 and 30, the functional surface side electrode 330 has a base material layer 331, a base layer 332, a rewiring layer 333, a functional surface side convex portion 334 and a bonding promotion layer 335. ..

The base material layer 331 is in contact with the functional surface 310 and is a portion of the functional surface 310 that directly conducts to an appropriate position in the functional circuit. The functional surface 310 is made of, for example, Al. The thickness of the base material layer 331 is, for example, 0.1 μm to 10 μm.

Here, the passivation film 340 and the protective film 350 will be described. The passivation film 340 is for preventing an excessive force from being applied to Si, which is the main body of the semiconductor element 300, and is made of an insulating material such as SiN. The passivation film 340 has a thickness of, for example, 200 nm to 3 μm. The protective film 350 is laminated on the passivation film 340 to prevent an excessive force from being applied to Si, which is the main body of the semiconductor element 300, and to facilitate the formation of the rewiring layer 333. Is. The protective film 350 is made of an insulating material such as polyimide. The thickness of the protective film 350 is, for example, about 5 μm.

A through hole 341 is formed in the passivation film 340. The through hole 341 is provided to expose the base material layer 331 of the functional surface side electrode 330. In the present embodiment, the peripheral portion of the passivation film 340 with the through hole 341 covers the edge of the base material layer 331. A through hole 351 is formed in the protective film 350. The through hole 351 coincides with the through hole 341 in a plan view, and is provided to expose the base material layer 331 of the functional surface side electrode 330.

Returning to the description of the functional surface side electrode 330. The base layer 332 is a layer forming a base for forming the rewiring layer 333. The base layer 332 matches the shape of the functional surface side electrode 330 in a plan view. That is, the base layer 332 covers the portion of the base layer 331 exposed from the passivation film 340 and the protective film 350, the through hole 341 of the passivation film 340, the through hole 351 of the protective film 350, and the appropriate place of the protective film 350. There is. The base layer 332 is made of, for example, Ti, TiW, Ta, or the like. The thickness of the base layer 332 is about 100 nm.

The rewiring layer 333 is a layer that is the main component of the functional surface side electrode 330, and is larger than the base material layer 331 in a plan view. The material of the rewiring layer 333 is not particularly limited, but in the present embodiment, it is made of Cu. The thickness of the rewiring layer 333 is, for example, about 10 μm.

The functional surface side convex portion 334 is formed on the rewiring layer 333, and projects in the direction in which the functional surface 310 faces. The material of the functional surface side convex portion 334 is not particularly limited as long as it is a conductive material, but in the present embodiment, it is Cu. The shape of the convex portion 334 on the functional surface side is not particularly limited, but in the present embodiment, it is a cylindrical shape. The size of the functional surface side convex portion 334 is 25 μm to 200 μm in diameter and 10 μm to 500 μm in height. In a plan view, the functional surface side convex portion 334 does not overlap with the base material layer 331 and is arranged at a position avoiding the base material layer 331. Further, the functional surface side convex portion 334 overlaps with the passivation film 340 and the protective film 350 in a plan view.

Further, in the present embodiment, as shown in FIG. 25, a plurality of functional surface side convex portions 334 are formed on the three functional surface side electrodes 330 facing the facing portions 110 of the lead 101, the lead 102, and the lead 103. Has been done. Eight functional surface-side convex portions 334 having 4 rows and 2 columns are formed on the functional surface-side convex portion 334 facing the facing portion 110 of the lead 101. The functional surface side electrodes 330 facing the facing portions 110 of the leads 102 and the leads 103 are formed with four functional surface side convex portions 334 in 2 rows and 2 columns. The functional surface side electrodes 330 facing the facing portions 110 of the leads 104 to 107 are formed with one functional surface side convex portion 334.

The bonding promotion layer 335 constitutes the outermost layer of the functional surface side electrode 330, and in the present embodiment, covers the functional surface side convex portion 334 and the rewiring layer 333. The bonding promoting layer 335 is for strengthening the bonding between the functional surface side electrode 330 and the facing portion 110 of the leads 101 to 107. The bonding promotion layer 335 contains at least one of Ni and Pd, and in the present embodiment, the Ni layer directly covering the functional surface side convex portion 334 and the rewiring layer 333 is laminated on the Ni layer. It consists of a Pd layer. The thickness of the bonding promoting layer 335 is, for example, about 100 nm to 10 μm. Further, as the material of the bonding promoting layer 335, Cu, Al, Ti, Au or the like can be appropriately adopted in addition to the above.

The functional surface side electrode 330 and the facing portion 110 of the leads 101 to 107 are joined by solid phase bonding. More specifically, the top surface of the convex portion 334 on the functional surface side and the joint surface 113 of the facing portion 110 are solid-phase bonded. In this embodiment, the joining promotion layer 335 is interposed between the functional surface side convex portion 334 and the joining surface 113 of the facing portion 110. In addition to or instead of forming the bonding promoting layer 335 on the functional surface side electrode 330, a bonding promoting layer may be formed on the bonding surface 113 of the facing portion 110.

The back surface metal layer 360 is formed on the back surface 320, and in the present embodiment, covers the entire surface of the back surface 320. The back surface metal layer 360 is made of metal, and is made of Cu, Al, Ti, Au, or the like. The thickness of the back surface metal layer 360 is, for example, 0.1 μm to 10 μm.

The bonding promotion layer 361 is laminated on the back surface metal layer 360. The bonding promoting layer 361 contains at least one of Ni and Pd, and in the present embodiment, the bonding promoting layer 361 includes a Ni layer that directly covers the back surface 320 and a Pd layer laminated on the Ni layer. The thickness of the bonding promoting layer 361 is, for example, about 100 nm to 10 μm. Further, as the material of the bonding promoting layer 361, Cu, Al, Ti, Au or the like can be appropriately adopted in addition to the above.

The back metal layer 360 and the joint surface 210 of the heat radiation member 200 are joined by solid phase bonding. In the present embodiment, the bonding promoting layer 361 is interposed between the back surface metal layer 360 and the bonding surface 210. The reason why the back surface 220 of the heat radiating member 200 has the above-mentioned uneven shape is a trace that the jig is pressed when the back surface metal layer 360 and the heat radiating member 200 are solid-phase bonded.

The sealing resin 400 covers the entire semiconductor element 300 and the portions of the leads 101 to 107 excluding the terminal portion 120. The sealing resin 400 is made of an insulating material, and in this embodiment, is made of, for example, a black epoxy resin. In the present embodiment, the 400 is also filled between the bonding surface 113 of the facing portion 110 and the bonding promoting layer 335 of the functional surface side electrode 330 in the region avoiding the functional surface side convex portion 334.

According to this embodiment, the heat radiating member 200 and the back surface 320 of the semiconductor element 300 are solid-phase bonded. As a result, it is possible to improve the efficiency of joining the heat radiating member 200 and the back surface 320 of the semiconductor element 300, as compared with the case of joining with a joining material interposed therebetween, for example. Further, by solid-phase bonding, it is possible to increase the heat transfer efficiency from the semiconductor element 300 to the heat radiating member 200, and it is possible to promote heat dissipation from the semiconductor element 300.

The convex portion 334 on the functional surface side and the facing portion 110 of the leads 101 to 107 are joined by solid phase bonding. Solid phase bonding is a bonding form in which both are directly bonded, and does not require a bonding medium such as a wire or solder that is interposed between the two. In addition, solid-phase bonding between all the functional surface-side convex portions 334 and the facing portions 110 of the leads 101 to 107 can be carried out collectively. This makes it possible to improve the manufacturing efficiency of the semiconductor device A3. Further, it is possible to increase the joint strength between the convex portion 334 on the functional surface side and the facing portion 110 of the leads 101 to 107.

By providing the functional surface side convex portion 334, it is possible to reduce the joint area between the functional surface side electrode 330 and the facing portion 110 of the leads 101 to 107. As a result, the magnitude of the force to be applied in order to obtain a predetermined bonding pressure at the time of solid phase bonding can be further reduced. This makes it possible to prevent the semiconductor element 300 from being unintentionally damaged. Further, by providing the convex portion 334 on the functional surface side, the sealing resin 400 can be reliably filled between the functional surface 310 of the semiconductor element 300 and the joint surface 113 of the facing portions 110 of the leads 101 to 107. Is. As a result, it is possible to more reliably insulate the portion to be insulated in the semiconductor device A3.

Since the convex portion 334 on the functional surface side does not overlap with the base material layer 331 in a plan view, it is possible to prevent an excessive load of force at the time of solid phase bonding on Si which is the main body of the semiconductor element 300. Further, by overlapping the functional surface side convex portion 334 with the passivation film 340 and the protective film 350 in a plan view, the force at the time of solid phase bonding can be absorbed by the passivation film 340 and the protective film 350.

By providing the bonding promoting layer 335, solid phase bonding between the functional surface side convex portion 334 and the facing portion 110 can be performed more reliably.

FIG. 31 shows a modified example of the semiconductor device A3. In this modification, instead of the above-mentioned functional surface side convex portion 334, the conduction support member side convex portion 111 described in the semiconductor device A2 is formed in the facing portion 110. Even with such a modification, it is possible to improve the efficiency of joining the heat radiating member 200 and the back surface 320 of the semiconductor element 300. In addition, heat dissipation from the semiconductor element 300 can be promoted. Further, the semiconductor device A3 may have a configuration in which the functional surface side convex portion 334 and the conduction support member side convex portion 111 are combined.

The semiconductor device according to the present invention is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present invention can be freely redesigned.

The configuration of the present invention and its variations thereof are listed below as appendices.

[Appendix 1A]
A semiconductor device having a functional surface on which a functional circuit is formed and a back surface facing the opposite side to the functional surface,
A conduction support member that supports the semiconductor element and conducts to the semiconductor element,
A resin package that covers at least a part of the semiconductor element and the conduction support member, and
It is a semiconductor device equipped with
The semiconductor element has a functional surface side electrode formed on the functional surface.
The conduction support member has a convex portion on the conduction support member side that protrudes toward the functional surface side electrode.
A semiconductor device characterized in that the functional surface side electrode and the conduction support member side convex portion of the conduction support member are joined by solid phase bonding.
[Appendix 2A]
The semiconductor device according to Appendix 1A, wherein the functional surface side electrode has a base material layer in contact with the functional surface.
[Appendix 3A]
The semiconductor device according to Appendix 2A, wherein the base material layer is made of Al.
[Appendix 4A]
The semiconductor device according to Appendix 2A or 3A, wherein the convex portion on the conduction support member side and the base material layer do not overlap each other in a plan view.
[Appendix 5A]
The semiconductor device according to any one of Supplementary note 2A to 4A, wherein the functional surface side electrode has a base layer laminated on the base material layer.
[Appendix 6A]
The semiconductor device according to Appendix 5A, wherein the base layer is made of any of Ti, W, and Ta.
[Appendix 7A]
The semiconductor device according to Appendix 5A or 6A, wherein the functional surface side electrode has a rewiring layer laminated on the base layer.
[Appendix 8A]
The semiconductor device according to Appendix 7A, wherein the rewiring layer is made of Cu.
[Appendix 9A]
The semiconductor device according to Supplementary note 7A or 8A, wherein the rewiring layer is larger than the base material layer in a plan view.
[Appendix 10A]
The semiconductor device according to any one of Supplementary note 7A to 9A, wherein the functional surface side electrode has a bonding promoting layer located on the outermost surface layer.
[Appendix 11A]
The semiconductor device according to Appendix 10A, wherein the bonding promoting layer of the functional surface side electrode contains at least one of Ni and Pd.
[Appendix 12A]
The semiconductor device according to Appendix 11A, wherein the bonding promoting layer of the functional surface side electrode has a Ni layer located on the functional surface side and a Pd layer laminated on the Ni layer.
[Appendix 13A]
The semiconductor device according to any one of Supplementary note 7A to 12A, comprising a passivation film covering the functional surface and having a passivation film formed with a through hole for allowing the functional surface side electrode to reach the functional surface.
[Appendix 14A]
The semiconductor device according to Appendix 13A, wherein the passivation film is made of SiN.
[Appendix 15A]
The semiconductor device according to Appendix 13A or 14A, wherein the rewiring layer overlaps the passivation film in a plan view.
[Appendix 16A]
The semiconductor device according to any one of Supplementary Provisions 13A to 15A, wherein the convex portion on the conduction support member side overlaps the passivation film in a plan view.
[Appendix 17A]
The semiconductor device according to any one of Supplementary note 13A to 16A, comprising a protective film laminated on the passivation film.
[Appendix 18A]
The semiconductor device according to Appendix 17A, wherein the protective film is made of polyimide.
[Appendix 19A]
The semiconductor device according to Appendix 17A or 18A, wherein the rewiring layer overlaps the protective film in a plan view.
[Appendix 20A]
The semiconductor device according to any one of Supplementary note 17A to 19A, wherein the convex portion on the conduction support member side overlaps with the protective film in a plan view.
[Appendix 21A]
The semiconductor device according to any one of Supplementary note 1A to 20A, wherein the conduction support member is a lead made of metal.
[Appendix 22A]
The semiconductor device according to Appendix 21A, wherein a part of the reed protrudes from the resin package.
[Appendix 23A]
The semiconductor device according to Appendix 21A or 22A, wherein the surface of the lead opposite to the portion joined to the functional surface side electrode has an uneven shape.
[Appendix 24A]
The semiconductor device according to any one of Supplementary Provisions 21A to 23A, wherein the convex portion on the conduction support member side is composed of a portion having a thickness thicker than that of a peripheral portion.
[Appendix 25A]
The semiconductor device according to Appendix 24A, wherein the convex portion on the conduction support member side has a through hole.
[Appendix 26A]
The semiconductor device according to any one of Supplementary Provisions 21A to 23A, wherein the convex portion on the conduction support member side is formed by bending a part of the conduction support member.
[Appendix 27A]
The semiconductor device according to any one of Supplementary note 1A to 26A, wherein the semiconductor element has a plurality of the functional surface side electrodes.
[Appendix 28A]
The semiconductor device according to any one of Supplementary note 1A to 27A, wherein the functional surface side electrode is joined to a plurality of the conduction support member side convex portions.
[Appendix 29A]
Further, a heat radiating member bonded to the semiconductor element is provided.
The semiconductor element has a back surface metal layer formed on the back surface, and the semiconductor element has a back surface metal layer.
The semiconductor device according to any one of Supplementary note 1A to 28A, wherein the back metal layer of the semiconductor element and the heat radiating member are bonded by solid phase bonding.
[Appendix 30A]
The semiconductor device according to Appendix 29A, wherein a bonding promoting layer is laminated on the back surface metal layer.
[Appendix 31A]
The semiconductor device according to Appendix 30A, wherein the bonding promoting layer of the back surface metal layer contains at least one of Ni and Pd.
[Appendix 32A]
The semiconductor device according to Appendix 29A, wherein a bonding promoting layer is laminated on the heat radiating member.
[Appendix 33A]
The semiconductor device according to Appendix 32A, wherein the bonding promoting layer of the heat radiating member contains at least one of Ni and Pd.
[Appendix 34A]
The semiconductor device according to any one of Supplementary Provisions 29A to 33A, wherein the surface of the heat radiating member opposite to the portion joined to the back surface metal layer has an uneven shape.
[Appendix 35A]
The semiconductor device according to any one of Supplementary Provisions 29A to 34A, wherein the surface of the heat radiating member opposite to the portion joined to the back surface metal layer is exposed from the resin package.

[Appendix 1B]
A semiconductor device having a functional surface on which a functional circuit is formed and a back surface facing the opposite side to the functional surface,
A conduction support member that supports the semiconductor element and conducts to the semiconductor element,
The heat dissipation member bonded to the semiconductor element and
A resin package that covers at least a part of the semiconductor element, the conduction support member, and the heat dissipation member.
It is a semiconductor device equipped with
The semiconductor element has a back surface metal layer formed on the back surface, and the semiconductor element has a back surface metal layer.
A semiconductor device characterized in that the back metal layer of the semiconductor element and the heat radiating member are joined by solid phase bonding.
[Appendix 2B]
The semiconductor device according to Appendix 1B, wherein a bonding promoting layer is laminated on the back surface metal layer.
[Appendix 3B]
The semiconductor device according to Appendix 2B, wherein the bonding promoting layer of the back surface metal layer contains at least one of Ni and Pd.
[Appendix 4B]
The semiconductor device according to any one of Supplementary note 1B to 3B, wherein a bonding promoting layer is laminated on the heat radiating member.
[Appendix 5B]
The semiconductor device according to Appendix 4B, wherein the bonding promoting layer of the heat radiating member contains at least one of Ni and Pd.
[Appendix 6B]
The semiconductor device according to any one of Supplementary note 1B to 5B, wherein the surface of the heat radiating member opposite to the portion joined to the back surface metal layer has an uneven shape.
[Appendix 7B]
The semiconductor device according to any one of Supplementary note 1B to 6B, wherein the semiconductor element has a functional surface side electrode formed on the functional surface.
[Appendix 8B]
The functional surface-side electrode includes a functional surface-side convex portion that protrudes in the direction in which the functional surface faces.
The semiconductor device according to Appendix 7B, wherein the functional surface side convex portion of the functional surface side electrode and the conduction support member are joined by solid phase bonding.
[Appendix 9B]
The conduction support member has a convex portion on the conduction support member side that protrudes toward the functional surface side electrode.
The semiconductor device according to Appendix 7B, wherein the functional surface side electrode and the conduction support member side convex portion of the conduction support member are joined by solid phase bonding.
[Appendix 10B]
The semiconductor device according to any one of Supplementary note 7B to 9B, wherein the functional surface side electrode has a base material layer in contact with the functional surface.
[Appendix 11B]
The semiconductor device according to Appendix 10B, wherein the base material layer is made of Al.
[Appendix 12B]
The semiconductor device according to Appendix 10B or 11B, wherein the functional surface side electrode has a base layer laminated on the base material layer.
[Appendix 13B]
The semiconductor device according to Appendix 12B, wherein the base layer is made of any of Ti, W, and Ta.
[Appendix 14B]
The semiconductor device according to Appendix 12B or 13B, wherein the functional surface side electrode has a rewiring layer laminated on the base layer.
[Appendix 15B]
The semiconductor device according to Appendix 14B, wherein the rewiring layer is made of Cu.
[Appendix 16B]
The semiconductor device according to Supplementary Note 14B or 15B, wherein the rewiring layer is larger than the base material layer in a plan view.
[Appendix 17B]
The semiconductor device according to any one of Supplementary note 14B to 16B, wherein the functional surface side electrode has a bonding promoting layer located on the outermost surface layer.
[Appendix 18B]
The semiconductor device according to Appendix 17B, wherein the bonding promoting layer of the functional surface side electrode contains at least one of Ni and Pd.
[Appendix 19B]
The semiconductor device according to any one of Supplementary note 14B to 18B, comprising a passivation film covering the functional surface and having a passivation film formed with a through hole for allowing the functional surface side electrode to reach the functional surface.
[Appendix 20B]
The semiconductor device according to Appendix 19B, wherein the passivation film is made of SiN.
[Appendix 21B]
The semiconductor device according to Appendix 19B or 20B, wherein the rewiring layer overlaps the passivation film in a plan view.
[Appendix 22B]
The semiconductor device according to any one of Supplementary note 19B to 21B, comprising a protective film laminated on the passivation film.
[Appendix 23B]
The semiconductor device according to Appendix 22B, wherein the protective film is made of polyimide.
[Appendix 24B]
The semiconductor device according to Appendix 22B or 23B, wherein the rewiring layer overlaps the protective film in a plan view.
[Appendix 25B]
The semiconductor device according to any one of Supplementary note 1B to 24B, wherein the conduction support member is a lead made of metal.
[Appendix 26B]
The semiconductor device according to Appendix 25B, wherein a part of the reed protrudes from the resin package.
[Appendix 27B]
The semiconductor device according to Appendix 25B or 26B, wherein the surface of the lead opposite to the portion joined to the functional surface side electrode has an uneven shape.

A1 to A3 Semiconductor devices 101 to 107 Lead 110 Opposing part 111 Continuity support member side convex part 112 Through hole 114 Back side 113 Joint surface 120 Terminal part 200 Heat dissipation member 210 Joint surface 220 Back side 300 Semiconductor element 310 Functional side 320 Back side 330 Functional side Electrode 331 Base layer 332 Base layer 333 Rewiring layer 334 Functional surface side convex part 335 Passivation promotion layer 341 Passivation film 341 Through hole 350 Protective film 351 Through hole 360 Back surface metal layer 361 Bonding promotion layer 400 Sealing resin 801 Table 802 Ingredients

Claims (23)

A semiconductor device having a functional surface on which a functional circuit is formed and a back surface facing the opposite side to the functional surface,
A conduction support member that supports the semiconductor element and conducts to the semiconductor element,
The heat dissipation member bonded to the semiconductor element and
A resin package that covers at least a part of the semiconductor element, the conduction support member, and the heat dissipation member.
It is a semiconductor device equipped with
The semiconductor element has a back surface metal layer formed on the back surface, and the semiconductor element has a back surface metal layer.
The heat radiating member has a first surface and a second surface facing opposite to each other in the thickness direction.
The back surface metal layer of the semiconductor element and the first surface of the heat dissipation member are joined by solid phase bonding.
The second surface has a concavo-convex shape including a plurality of convex portions and a plurality of concave portions overlapping the semiconductor element when viewed along the thickness direction .
The semiconductor element has a functional surface side electrode formed on the functional surface .
The functional surface-side electrode includes a functional surface-side convex portion that protrudes in the direction in which the functional surface faces.
The functional surface side convex portion of the functional surface side electrode and the conduction support member are joined by solid phase bonding.
It is provided with a passivation film having a through hole that covers the functional surface and allows the functional surface side electrode to reach the functional surface.
A semiconductor device characterized in that the convex portion on the functional surface side and the through hole do not overlap in a plan view . A semiconductor device having a functional surface on which a functional circuit is formed and a back surface facing the opposite side to the functional surface,
A conduction support member that supports the semiconductor element and conducts to the semiconductor element,
The heat dissipation member bonded to the semiconductor element and
A resin package that covers at least a part of the semiconductor element, the conduction support member, and the heat dissipation member.
It is a semiconductor device equipped with
The semiconductor element has a back surface metal layer formed on the back surface, and the semiconductor element has a back surface metal layer.
The heat radiating member has a first surface and a second surface facing opposite to each other in the thickness direction.
The back surface metal layer of the semiconductor element and the first surface of the heat dissipation member are joined by solid phase bonding.
The second surface has a concavo-convex shape including a plurality of convex portions and a plurality of concave portions overlapping the semiconductor element when viewed along the thickness direction.
The semiconductor element has a functional surface side electrode formed on the functional surface.
The conduction support member has a convex portion on the conduction support member side that protrudes toward the functional surface side electrode.
The functional surface side electrode and the conduction support member side convex portion of the conduction support member are joined by solid phase bonding.
It is provided with a passivation film having a through hole that covers the functional surface and allows the functional surface side electrode to reach the functional surface.
A semiconductor device characterized in that the convex portion on the conduction support member side and the through hole do not overlap in a plan view. The semiconductor device according to claim 1 or 2 , wherein a bonding promotion layer is laminated on the back surface metal layer. The semiconductor device according to claim 3 , wherein the bonding promoting layer of the back surface metal layer contains at least one of Ni and Pd. The semiconductor device according to any one of claims 1 to 4 , wherein a bonding promoting layer is laminated on the heat radiating member. The semiconductor device according to claim 5 , wherein the bonding promoting layer of the heat radiating member contains at least one of Ni and Pd. The semiconductor device according to any one of claims 1 to 6 , wherein the functional surface side electrode has a base material layer in contact with the functional surface. The semiconductor device according to claim 7 , wherein the base material layer is made of Al. The semiconductor device according to claim 7 or 8 , wherein the functional surface side electrode has a base layer laminated on the base material layer. The semiconductor device according to claim 9 , wherein the base layer is made of any of Ti, W, and Ta. The semiconductor device according to claim 9 or 10 , wherein the functional surface side electrode has a rewiring layer laminated on the base layer. The semiconductor device according to claim 11 , wherein the rewiring layer is made of Cu. The semiconductor device according to claim 11 or 12 , wherein the rewiring layer is larger than the base material layer in a plan view. The semiconductor device according to any one of claims 11 to 13 , wherein the functional surface side electrode has a bonding promoting layer located on the outermost surface layer. The semiconductor device according to claim 14 , wherein the bonding promoting layer of the functional surface side electrode contains at least one of Ni and Pd. The semiconductor device according to any one of claims 11 to 15 , wherein the passivation film is made of SiN. The semiconductor device according to any one of claims 11 to 16 , wherein the rewiring layer overlaps with the passivation film in a plan view. The semiconductor device according to any one of claims 11 to 17 , comprising a protective film laminated on the passivation film. The semiconductor device according to claim 18 , wherein the protective film is made of polyimide. The semiconductor device according to claim 18 or 19 , wherein the rewiring layer overlaps the protective film in a plan view. The semiconductor device according to any one of claims 1 to 20 , wherein the conduction support member is a lead made of metal. The conduction support member is a lead made of metal and has a lead.
The semiconductor device according to any one of claims 1 to 20 , wherein the surface of the lead opposite to the portion joined to the functional surface side electrode has an uneven shape. The semiconductor device according to claim 21 or 22 , wherein a part of the reed protrudes from the resin package.

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