JP7019544B2 - Ion implanter - Google Patents

Description

The present invention relates to an ion implanter that implants ions into a member.

The ion implantation device performs an implantation process for implanting ions into the member to be implanted. The member to be injected is, for example, a semiconductor wafer (substrate). In the following, the ions for being injected into the member to be injected are also referred to as "specific ions".

In the injection process, the material gas or solid material supplied to the ion source is ionized by arc discharge. As a result, the ion source generates a plurality of different types of ions. Then, when a predetermined voltage is applied to the ion source, a plurality of types of ions are extracted from the ion source. The mass spectrometric unit guides specific ions contained in a plurality of types of ions to the slit of the analysis slit. Specific ions that have passed through the slit of the analysis slit are injected into the member to be injected.

Patent Document 1 discloses a configuration for performing an implantation process in an ion implantation apparatus (hereinafter, also referred to as “related configuration A”). In the related configuration A, the size of the opening for the specific ion to pass is adjusted by moving the four movable plates independently.

Japanese Unexamined Patent Publication No. 6-02618

In the related configuration A, four independently movable movable plates are used in order to adjust the size of the slit (opening) through which the specific ion passes. Therefore, the configuration for adjusting the size of the slit is complicated, and the manufacturing cost of the ion implanter is high. Therefore, the configuration for adjusting the size of the slit is required to be a simple configuration.

The present invention has been made to solve such a problem, and an object of the present invention is to provide an ion implanter having a simple configuration for adjusting the size of a slit.

In order to achieve the above object, the ion implanter according to one aspect of the present invention injects specific ions contained in a plurality of types of ions generated by an ion source into a member to be implanted. The ion implantation device includes an analysis slit through which the specific ion passes, the analysis slit has a slit through which the specific ion passes, and the analysis slit has a plate-shaped first member and a plate-shaped first member. The first member has a first slit through which the specific ion passes, the second member has a second slit through which the specific ion passes, and the slit is viewed in a plan view. In a situation where the first slit of the first member overlaps with the second slit of the second member, the first slit and the second slit are configured, and the ion implantation device is the first member. And the structure has a structure in which the size of the slit is changed by moving both or one of the second members, and the structure is described by moving both or one of the first member and the second member. The width of the slit and the height of the slit are changed, and the shapes of the first slit and the second slit are elongated, and the first slit has a first end portion, and the first slit has the first end portion. One end is a longitudinal end of the first slit, the second slit has a second end, and the second end is a longitudinal end of the second slit. Yes, in the structure, each of the first end and the second end is configured such that the height of the slit changes as the movement of both or one of the first member and the second member. I have .

According to the present invention, the slit is composed of the first slit and the second slit in a situation where the first slit of the first member overlaps with the second slit of the second member in a plan view. Will be done. The ion implanter has a structure in which the size of the slit is changed by moving both or one of the first member and the second member.

That is, the ion implantation device can change the size of the slit with a simple configuration using two members, a first member and a second member. Thereby, it is possible to provide an ion implanter having a simple configuration for adjusting the size of the slit.

It is a figure which shows the structure of the ion implantation apparatus which concerns on Embodiment 1. FIG. It is an enlarged view of a part of a mass spectrometry part. It is a top view which shows the structure of the analysis slit. It is a figure for demonstrating the characteristic structure of Embodiment 1. FIG. It is a top view for demonstrating the characteristic structure of Embodiment 1. FIG. It is a top view for demonstrating the size change process which concerns on Embodiment 1. FIG. It is a figure which shows the structure of the member included in the analysis slit of the initial state to which the structure which concerns on modification 1 was applied. It is a top view which shows the structure of the analysis slit to which the structure which concerns on modification 1 is applied. It is a top view for demonstrating the size change process A which concerns on modification 1. FIG.

Hereinafter, embodiments will be described with reference to the drawings. In the following drawings, the same components are designated by the same reference numerals. The names and functions of the components with the same reference numerals are the same. Therefore, detailed description of some of the components with the same reference numerals may be omitted.

The dimensions, materials, shapes, relative arrangements, and the like of each component exemplified in the embodiment may be appropriately changed depending on the configuration of the device, various conditions, and the like. In addition, the dimensions of each component in each figure may differ from the actual dimensions.

<Embodiment 1>
FIG. 1 is a diagram showing a configuration of an ion implantation apparatus 100 according to the first embodiment. In FIG. 1, the X, Y, and Z directions are orthogonal to each other. The X, Y, and Z directions shown in the figure below are also orthogonal to each other. In the following, the direction including the X direction and the direction opposite to the X direction (-X direction) is also referred to as "X-axis direction". Further, in the following, the direction including the Y direction and the direction opposite to the Y direction (−Y direction) is also referred to as “Y-axis direction”. Further, in the following, the direction including the Z direction and the direction opposite to the Z direction (−Z direction) is also referred to as “Z axis direction”.

Further, in the following, a plane including the X-axis direction and the Y-axis direction is also referred to as an “XY plane”. Further, in the following, a plane including the X-axis direction and the Z-axis direction is also referred to as an “XZ plane”. Further, in the following, a plane including the Y-axis direction and the Z-axis direction is also referred to as a “YZ plane”.

The ion implantation device 100 is a device that implants ions into the member to be implanted 6. The injected member 6 is, for example, a semiconductor wafer (substrate). In the following, the ions for being injected into the member to be injected 6 are also referred to as “specific ions”. Although the details will be described later, the ion implantation apparatus 100 performs an implantation process of injecting specific ions contained in a plurality of types of ions generated by the ion source 10 into the member to be implanted 6. The injection process is, for example, a process of controlling the concentration of impurities on the surface side of the semiconductor wafer (substrate).

With reference to FIG. 1, the ion implanter 100 includes an ion source 10, a mass spectrometric unit 20, a beamline unit 30, and an accommodating unit 40. The accommodating portion 40 accommodates the member to be injected 6. The injected member 6 is fixed inside the accommodating portion 40.

FIG. 2 is an enlarged view of a part of the mass spectrometry unit 20. With reference to FIGS. 1 and 2, the mass spectrometer 20 includes a mass spectrometer 21 and an analysis slit 70. The analysis slit 70 is an important member for performing mass spectrometry. During the period during which the injection process is being performed, specific ions pass through the analysis slit 70.

FIG. 3 is a plan view showing the configuration of the analysis slit 70. In the following, the state of the new analysis slit 70 is also referred to as an “initial state”. FIG. 3A is a plan view showing the analysis slit 70 in the initial state. The analysis slit 70 has a main surface 7s. Further, the analysis slit 70 in the initial state has the slit S1w.

Next, the injection process will be described. With reference to FIGS. 1 to 3, in the injection process, the ion beam B1 irradiates the injected member 6. The ion beam B1 is a beam containing ions.

Specifically, in the injection process, first, the ion source 10 generates a plurality of different types of ions. The mass spectrometer 20 selects specific ions contained in a plurality of types of ions. Specifically, the mass spectrometer 21 guides the ion beam B1 containing the specific ion to the slit S1w of the analysis slit 70 so that the specific ion passes through the slit S1w of the analysis slit 70. As a result, the specific ions contained in the ion beam B1 pass through the slit S1w of the analysis slit 70. Then, the specific ion contained in the ion beam B1 is injected into the injected member 6 accommodated in the accommodating portion 40 via the beam line portion 30.

In the following, the portion of the analysis slit 70 around the slit S1w is also referred to as a “slit peripheral portion”. When the above-mentioned injection process is performed, a part of the ion beam B1 is irradiated to the peripheral portion of the slit 70 of the analysis slit 70. Therefore, when the ion implantation device 100 that performs the implantation process is used for a long period of time, the peripheral portion of the analysis slit 70 is worn. As a result, the size of the slit S1w becomes large.

In the following, the state of the analysis slit 70 in a state where the size of the slit S1w of the analysis slit 70 in the initial state has changed due to the wear of the peripheral portion of the slit is also referred to as a “wear state”. The wear state analysis slit 70 has a slit S1wa (see FIG. 3B). In FIG. 3B, the outline of the slit S1w is shown by a dotted line.

The size of the slit S1wa in the analysis slit 70 in the worn state is larger than the size of the slit S1w in the analysis slit 70 in the initial state. In the following, the width of the slit required for only specific ions to pass through the slit is also referred to as “specific width”.

When the width of the slit S1wa is larger than the specific width, only specific ions cannot be selected. In this case, another ion different from the specific ion is injected into the member to be injected 6. When the defect occurs, the quality of the product deteriorates. To prevent this, it is necessary to replace the analysis slit regularly. However, since it takes a lot of time to replace the analysis slit, there is a problem that the operation of the production apparatus is affected and the productivity is lowered.

Therefore, the ion implantation apparatus 100 of the present embodiment is configured to suppress the occurrence of the above-mentioned problems and solve the above-mentioned problems.

Next, a characteristic configuration (hereinafter, also referred to as “configuration Ct1”) of the present embodiment will be described. FIG. 4 is a diagram for explaining the characteristic configuration Ct1 of the first embodiment. FIG. 4 is a cross-sectional view of the analysis slit 70 along the XY plane. FIG. 5 is a plan view for explaining the characteristic configuration Ct1 of the first embodiment.

Each of FIGS. 4 (a) and 5 (a) is a plan view showing the analysis slit 70 in the initial state. In FIG. 5A, the size of the slit S1w in the X-axis direction is shown larger than the actual size in order to make the configuration Ct1 easy to understand.

With reference to FIGS. 4A and 5A, in configuration Ct1, the analysis slit 70 includes a plate-shaped member 71 and a plate-shaped member 72. The main surface 7s of the analysis slit 70 is one main surface of the member 71.

Each of the members 71 and 72 is composed of, for example, carbon. The member 71 has a slit S1. The member 72 has a slit S2. The size and shape of the member 71 are the same as the size and shape of the member 72, respectively. Therefore, the size and shape of the slit S1 are the same as the size and shape of the slit S2, respectively. The shape of each of the slit S1 and the slit S2 is long.

In the following, the situation in which the slit S1 of the member 71 overlaps with the slit S2 of the member 72 in a plan view (XZ plane) is also referred to as an “overlap situation”. As used herein, the term "planar view" means "a state in which the main surface 7s of the analysis slit 70 is viewed from a position facing the main surface 7s".

The overlapping situation is also a situation in which the member 71 overlaps with the member 72 in a plan view (XZ plane). FIG. 5A shows an overlapping situation.

In the configuration Ct1, the slit S1w is composed of the slit S1 and the slit S2 in the overlapping situation (see FIGS. 4A and 5A). As a result, the specific ions pass through the slits S1 and S2 during the period during which the injection process is being performed. Further, in the configuration Ct1, the ion implanter 100 has a structure X1.

Next, the structure X1 will be described. The structure X1 is a structure in which the size of the slit S1w is changed by moving both or one of the member 71 and the member 72. As described above, the state of the analysis slit 70 changes from the initial state to the worn state due to the long-term use of the ion implantation device 100 that performs the implantation process.

4 (b) and 5 (b) show the analysis slit 70 in the wear state. In addition, in FIG. 4B and FIG. 5B, the slit S1w is shown by a dotted line. With reference to FIGS. 4 (b) and 5 (b), the wear state analysis slit 70 has a slit S1wa.

As described above, the structure X1 is a structure in which the size (width) of the slit S1w is changed by moving both or one of the member 71 and the member 72. That is, the structure X1 is a structure in which the size (width) of the slit S1wa is changed by moving both or one of the member 71 and the member 72.

In the following, the slit S1 of the member 71 included in the analysis slit 70 in the worn state is also referred to as “slit S1a”. Further, in the following, the slit S2 of the member 72 included in the analysis slit 70 in the worn state is also referred to as “slit S2a”. The slit S1wa in the configuration Ct1 is an opening (through hole) composed of the slit S1a and the slit S2a existing in the analysis slit 70 in a plan view (XZ plane) (see FIG. 5 (b)).

Further, in the following, the horizontal direction is also referred to as "horizontal direction Dr1" or "direction Dr1". The horizontal direction Dr1 is a direction along the X-axis direction. The horizontal direction Dr1 includes the direction Dr1a and the direction Dr1b. The direction Dr1b is opposite to the direction Dr1a.

Further, in the following, the size of the slit S1w in the analysis slit 70 in the initial state in the horizontal direction Dr1 is also referred to as “size L1”. The size L1 is the width of the slit S1w. That is, the size L1 is the width of each of the slits S1 and S2.

Further, in the following, the size of the slit S1wa in the horizontal direction Dr1 is also referred to as “size L1a”. The size L1a is the width of the slit S1wa. That is, the size L1a is the width of each of the slits S1a and S2a.

Specifically, in the structure X1, the member 71 is configured to be movable in the horizontal direction Dr1 (see FIGS. 4 and 5). Further, in the structure X1, the member 72 is configured to be movable in the horizontal direction Dr1. Each of the members 71 and 72 is configured to move in the horizontal direction Dr1 by, for example, the hand of an operator.

Each of the members 71 and 72 may be configured to move in the horizontal direction Dr1 by, for example, a machine driven by a motor or the like. In this configuration, each of the members 71 and 72 is moved by a machine having a function of moving each of the members 71 and 72 in the horizontal direction Dr1.

Further, the structure X1 is a structure in which the size (width) of the slit S1w (slit S1wa) is changed by moving both or one of the member 71 and the member 72 in the horizontal direction Dr1.

In the following, the process of moving the member 71 in the direction Dr1a is also referred to as “process Pr1”. Further, in the following, the process of moving the member 72 in the direction Dr1b is also referred to as “process Pr2”. The structure X1 is a structure in which the width of the slit S1w (slit S1wa) is reduced by performing both or one of the processing Pr1 and the processing Pr2.

Next, a process for changing the size L1a of the slit S1wa in the analysis slit 70 in the wear state (hereinafter, also referred to as “size change process”) will be described. The size change process is a process of reducing the size L1a (width) of the slit S1wa in the analysis slit 70 in the worn state.

In the size change process, the processes Pr1 and Pr2 are performed so that the size L1a of the slit S1wa becomes the size L1. The processes Pr1 and Pr2 are performed by, for example, an operator. The processes Pr1 and Pr2 may be performed by a machine, for example. As the process Pr1 is performed, the member 71 moves in the direction Dr1a (see FIGS. 4 (c) and 6). FIG. 6 is a plan view for explaining the size change process according to the first embodiment. Further, when the processing Pr2 is performed, the member 72 moves in the direction Dr1b (see FIGS. 4 (c) and 6).

As a result, the size L1a of the slit S1wa becomes the initial size L1. Therefore, in the situation where the analysis slit 70 in the worn state is used, it is possible to prevent another ion different from the specific ion from passing through the slit S1wa.

(effect)
As described above, according to the present embodiment, the slit S1w has the slit S1 and the slit S2 in a situation where the slit S1 of the member 71 overlaps with the slit S2 of the member 72 in a plan view (XZ plane). Consists of. The ion implanter 100 has a structure in which the size of the slit S1w (S1wa) is changed by moving both or one of the member 71 and the member 72.

That is, the ion implantation device 100 can change the size of the slit S1w (S1wa) with a simple configuration using two members, the member 71 and the member 72. Thereby, it is possible to provide an ion implanter having a simple configuration for adjusting the size of the slit.

Further, according to the present embodiment, when the slit becomes large due to wear of the peripheral portion of the analysis slit 70, the analysis slit 70 is not immediately replaced with a new analysis slit. Instead, the processes Pr1 and Pr2 are performed so that the size of the slit S1wa of the analysis slit 70 becomes smaller. That is, the processes Pr1 and Pr2 are performed so that the size L1a of the slit S1wa of the analysis slit 70 becomes the size L1.

As a result, the size of the slit S1wa, which is the slit S1w that has become larger due to the wear of the peripheral portion of the slit of the analysis slit 70, can be set to the initial size. Therefore, the durability of the analysis slit 70 can be maintained even when the analysis slit 70 is worn. That is, the service life of the analysis slit 70 can be extended. Therefore, in a situation where it is necessary to replace the analysis slit, the number of replacement operations for replacing the analysis slit 70 with a new analysis slit can be reduced.

Further, the analysis slit 70 is composed of members 71 and 72 having the same shape. Therefore, the structure of the analysis slit 70 can be simplified.

<Modification 1>
In the following, the configuration of this modification is also referred to as “configuration Ctm1”. In the configuration Ctm1, the structure X1 of the ion implantation device 100 is a structure that changes the height of the slit in addition to the width of the slit. Configuration Ctm1 applies to configuration Ct1 of Embodiment 1. The analysis slit 70 in the configuration Ct1 differs from the analysis slit 70 in the configuration Ct1 only in the shapes of the slits S1 and S2. Since the other configurations and functions of the analysis slit 70 in the configuration Ct1 are the same as those of the analysis slit 70 in the configuration Ct1, the detailed description will not be repeated.

FIG. 7 is a diagram showing the configurations of the members 71 and 72 included in the analysis slit 70 in the initial state to which the configuration Ctm1 according to the modification 1 is applied. FIG. 7A is a diagram showing the configuration of the member 71 to which the configuration Ctm1 according to the modification 1 is applied. FIG. 7B is a diagram showing the configuration of the member 72 to which the configuration Ctm1 according to the modification 1 is applied.

With reference to FIGS. 7 (a) and 7 (b), the member 71 has a slit S1 and the member 72 has a slit S2. In the configuration Ctm1, the shape of the member 71 is the same as the shape of the member 72. Therefore, the size and shape of the slit S1 are the same as the size and shape of the slit S2, respectively. The shape of each of the slit S1 and the slit S2 is long.

The slit S1 in the configuration Ctm1 has two ends E1. Each end E1 is a longitudinal end of the slit S1. The contour shape of one end E1 of the two ends E1 is an inverted V shape. Further, the contour shape of the other end E1 of the two ends E1 is V-shaped.

The slit S2 in the configuration Ctm1 has two ends E2. Each end E2 is a longitudinal end of the slit S2. The contour shape of one end E2 of the two ends E2 is an inverted V shape. Further, the contour shape of the other end E2 of the two ends E2 is V-shaped.

FIG. 8 is a plan view showing the configuration of the analysis slit 70 to which the configuration Ctm1 according to the modification 1 is applied. FIG. 8A is a plan view showing the analysis slit 70 in the initial state in the modified example 1. The slit S1w of the analysis slit 70 in the configuration Ctm1 is composed of the slit S1 of FIG. 7A and the slit S2 of FIG. 7B in the overlapping situation (see FIG. 8A). A cross-sectional view of the analysis slit 70 in FIG. 8A along the XY plane is shown in FIG. 4A.

As described above, after the ion implantation device 100 is used for a long period of time, the state of the analysis slit 70 changes from the initial state to the worn state (see FIG. 8B). A cross-sectional view of the analysis slit 70 in FIG. 8B along the XY plane is shown in FIG. 4B. In addition, in FIG. 8 (b) and FIG. 4 (b), the slit S1w is shown by a dotted line.

In the following, the slit S1 of the member 71 included in the analysis slit 70 of the wear state in the configuration Ctm1 is also referred to as “slit S1a”. Further, in the following, the slit S2 of the member 72 included in the analysis slit 70 of the wear state in the configuration Ctm1 is also referred to as “slit S2a”.

With reference to FIGS. 4 (b) and 8 (b), the wear state analysis slit 70 has a slit S1wa. The slit S1wa in the configuration Ctm1 is an opening (through hole) composed of the slit S1a and the slit S2a existing in the analysis slit 70 in a plan view (XZ plane).

Configuration In the structure X1 in Ctm1, the member 71 is configured to be movable in the horizontal direction Dr1. Further, in the structure X1 in the configuration Ctm1, the member 72 is configured to be movable in the horizontal direction Dr1.

The structure X1 in the configuration Ctm1 is a structure that changes the size of the slit S1w (slit S1wa) by moving both or one of the member 71 and the member 72. Specifically, the structure X1 in the configuration Ctm1 changes the width of the slit S1w (slit S1wa) and the height of the slit S1w (slit S1wa) by moving both or one of the member 71 and the member 72. It is a structure.

Further, in the structure X1 in the configuration Ctm1, each of the end portion E1 and the end portion E2 is configured so that the height of the slit S1w (slit S1wa) changes due to the movement of both or one of the member 71 and the member 72. There is.

In the following, the process of moving the member 71 in the direction Dr1a is also referred to as “process Pr1”. Further, the process of moving the member 72 in the direction Dr1b is also referred to as “process Pr2”. The structure X1 in the configuration Ctm1 is a structure in which the width of the slit S1w (slit S1wa) and the height of the slit are reduced by performing both or one of the processing Pr1 and the processing Pr2.

In the structure X1 in the configuration Ctm1, each of the end portion E1 and the end portion E2 is configured so that the height of the slit S1w (slit S1wa) is reduced by performing both or one of the processing Pr1 and the processing Pr2. ..

Specifically, the contour line showing the contour of each end portion E1 includes two straight lines Le1 (see FIG. 7A). In a plan view (XZ plane), the angle formed by the line along the horizontal direction Dr1 and each straight line Le1 is an acute angle. Further, the contour line showing the contour of each end portion E2 includes two straight lines Le2 (see FIG. 7B). In a plan view (XZ plane), the angle formed by the line along the horizontal direction Dr1 and each straight line Le2 is an acute angle.

In the following, the size of the slit S1w in the analysis slit 70 in the initial state in the vertical direction (Z-axis direction) is also referred to as “size L2”. The size L2 is the height of the slit S1w. That is, the size L2 is the height of each of the slits S1 and S2.

Further, in the following, the size of the slit S1wa in the vertical direction (Z-axis direction) is also referred to as “size L2a”. The size L2 is the height of the slit S1wa. That is, the size L2a is the height of each of the slits S1a and S2a.

Next, a process for changing the sizes L1a and L2a of the slits S1wa in the analysis slit 70 in the worn state (hereinafter, also referred to as “size change process A”) will be described. The size change process A in the configuration Ctm1 is a process of reducing the size L1a (width) of the slit S1wa and the size L2a (height) of the slit S1wa.

In the size change process A, the processes Pr1 and Pr2 are performed so that the size L1a of the slit S1wa becomes the size L1 and the size L2a of the slit S1wa becomes the same size as the size L2. The processes Pr1 and Pr2 are performed by, for example, an operator. The processes Pr1 and Pr2 may be performed by a machine, for example.

As the process Pr1 is performed, the member 71 moves in the direction Dr1a (see FIGS. 4 (c) and 9). FIG. 9 is a plan view for explaining the size change process A according to the modification 1. As the process Pr2 is performed, the member 72 moves in the direction Dr1b (see FIGS. 4 (c) and 9).

As a result, the size L1a of the slit S1wa becomes the initial size L1. Further, the size L2a of the slit S1wa becomes the same size as the size L2. For example, as shown in FIG. 9, one end of the slit S1wa in the longitudinal direction is composed of a straight line Le1 of the end E1 of the slit S1a and a straight line Le2 of the end E2 of the slit S2a. Therefore, by performing the processes Pr1 and Pr2, for example, the height of the apex of one end of the slit S1wa in the longitudinal direction becomes low.

(effect)
As described above, according to the present modification, the processes Pr1 and Pr2 are performed so that the size L1a of the slit S1wa becomes the size L1 and the size L2a of the slit S1wa becomes the same size as the size L2. As a result, the same effect as that of the first embodiment can be obtained. For example, the service life of the analysis slit 70 can be extended. Therefore, the number of replacement operations for replacing the analysis slit 70 with a new analysis slit 70 can be reduced.

Further, according to the present modification, by performing the size change process A once, the size L2a (height) of the slit S1wa can be reduced in addition to the size L1a (width) of the slit S1wa. As a result, the opening area of the slit S1wa can be maintained at the same area as the area in the initial state. Therefore, in the configuration Ctm1 of this modification, it is possible to further suppress the passage of another ion different from the specific ion through the slit S1wa in the situation where the analysis slit 70 in the worn state is used.

It should be noted that, within the scope of the invention, the present invention can be freely combined with embodiments and modifications, and the embodiments and modifications can be appropriately modified and omitted.

For example, in the size change process of the first embodiment, one of the processes Pr1 and Pr2 may be performed (hereinafter, also referred to as “transformation configuration A1”). The structure X1 in the modified configuration A1 is a structure in which the width of the slit S1w (slit S1wa) is reduced by performing one of the processing Pr1 and the processing Pr2. That is, the structure X1 in the modified configuration A1 is a structure in which one of the member 71 and the member 72 moves in the horizontal direction Dr1 to change the size of the slit S1w (slit S1wa). That is, the structure X1 in the modified configuration A1 is a structure in which one of the member 71 and the member 72 moves to change the size of the slit S1w.

Further, for example, in the size change process A of the modification example 1, one of the processes Pr1 and Pr2 may be performed (hereinafter, also referred to as “transformation configuration A2”). In the structure X1 in the modified configuration A2, each of the end portion E1 and the end portion E2 is configured so that the height of the slit S1w (slit S1wa) is reduced by performing one of the processing Pr1 and the processing Pr2. That is, in the structure X1 in the modified configuration A2, each of the end portion E1 and the end portion E2 is configured so that the height of the slit S1w (slit S1wa) changes when one of the member 71 and the member 72 moves. ..

Further, the structure X1 in the modified configuration A2 is a structure in which one of the member 71 and the member 72 moves to change the size of the slit S1w (slit S1wa). Specifically, the structure X1 in the modified configuration A2 has a structure in which the width of the slit S1w (slit S1wa) and the height of the slit S1w (slit S1wa) are changed by moving one of the member 71 and the member 72. Is.

Further, the size and shape of the member 71 are the same as, but are not limited to, the size and shape of the member 72, respectively. If the size of the slit S1w (slit S1wa) can be changed by moving both or one of the member 71 and the member 72, the size and shape of the member 71 may be different from the size and shape of the member 72, respectively. good.

Further, the shape of each of the end portions E1 and E2 is not limited to the shape shown in FIG. 7A or FIG. 7B. If it is possible to change the height of the slit S1w (slit S1wa) by moving both or one of the member 71 and the member 72, the respective shapes of the ends E1 and E2 are shown in FIGS. 7 (a) or 7 It may be different from the shape shown in (b).

6 Implanted member, 10 ion source, 20 mass spectrometer, 70 analysis slit, 71,72 member, 100 ion implanter, E1, E2 end, Le1, Le2 straight line, S1, S1a, S1w, S1wa, S2, S2a slit.

Claims (5)

An ion implanter that implants specific ions contained in a plurality of types of ions generated by an ion source into a member to be implanted.
The analysis slit through which the specific ion passes is provided.
The analysis slit has a slit through which the specific ion passes.
The analysis slit is
The plate-shaped first member and
Including the plate-shaped second member
The first member has a first slit through which the specific ion passes.
The second member has a second slit through which the specific ion passes.
The slit is composed of the first slit and the second slit in a situation where the first slit of the first member overlaps with the second slit of the second member in a plan view.
The ion implanter is
It has a structure that changes the size of the slit by moving both or one of the first member and the second member.
The structure changes the width of the slit and the height of the slit by moving both or one of the first member and the second member.
The shape of each of the first slit and the second slit is long and long.
The first slit has a first end and has a first end.
The first end portion is an end portion in the longitudinal direction of the first slit.
The second slit has a second end and has a second end.
The second end portion is an end portion in the longitudinal direction of the second slit.
In the structure, each of the first end portion and the second end portion is configured so that the height of the slit changes due to the movement of both or one of the first member and the second member.
Ion implanter. In the structure, the first member is configured to be movable in the horizontal direction.
In the structure, the second member is configured to be movable in the horizontal direction.
The ion implantation apparatus according to claim 1, wherein the structure changes the size of the slit by moving both or one of the first member and the second member in the horizontal direction. The structure includes both or one of a first process in which the first member moves in the first direction included in the horizontal direction and a second process in which the second member moves in the direction opposite to the first direction. The ion implantation apparatus according to claim 2, wherein the width of the slit is reduced by the above-mentioned. In the structure, both or one of the first process of moving the first member in the horizontal direction and the second process of moving the second member in the direction opposite to the first direction are performed. The ion implantation apparatus according to claim 1 , wherein each of the first end portion and the second end portion is configured so that the height of the slit is reduced by the operation. The first contour line showing the contour of the first end portion includes the first straight line.
In a plan view, the angle formed by the line along the horizontal direction and the first straight line is an acute angle.
The second contour line showing the contour of the second end portion includes the second straight line.
The ion implantation apparatus according to claim 4 , wherein the angle formed by the line along the horizontal direction and the second straight line is an acute angle in a plan view.

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