JP7011946B2 - Wiring board - Google Patents

Wiring board Download PDF

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JP7011946B2
JP7011946B2 JP2018009458A JP2018009458A JP7011946B2 JP 7011946 B2 JP7011946 B2 JP 7011946B2 JP 2018009458 A JP2018009458 A JP 2018009458A JP 2018009458 A JP2018009458 A JP 2018009458A JP 7011946 B2 JP7011946 B2 JP 7011946B2
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insulating layer
layer
insulating
wiring conductor
base metal
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JP2019083303A (en
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正昭 原園
孝行 梅本
英敏 湯川
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Kyocera Corp
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Kyocera Corp
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Priority to KR1020180114864A priority patent/KR102117242B1/en
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Description

本開示は、微細配線を有する配線基板に関するものである。 The present disclosure relates to a wiring board having fine wiring.

現在、微細な配線導体が絶縁層に高密度に位置する配線基板が開発されている。このような配線基板は、サーバーやスーパーコンピューター等に代表される高機能な電子機器に用いられる。なお、このような配線基板に用いられる絶縁層は、絶縁樹脂と絶縁樹脂中に分散して位置する絶縁粒子とを含んでいる。 Currently, wiring boards in which fine wiring conductors are located at high density in the insulating layer are being developed. Such wiring boards are used in high-performance electronic devices such as servers and supercomputers. The insulating layer used for such a wiring board contains an insulating resin and insulating particles dispersed and located in the insulating resin.

特開２０１３－０１２７２６号公報Japanese Unexamined Patent Publication No. 2013-102726

配線基板の配線導体は、特に高周波信号を効率良く伝送する上では、配線導体の表面が平坦状であることが望まれる。一方で、配線導体と絶縁層とを強く密着させる上では、絶縁樹脂を粗面化することが望まれる。しかしながら、上述のような配線基板に用いられる絶縁層は、配線基板の熱膨張率を抑えて配線導体の断線を防ぐために高密度に分散された絶縁粒子を有している場合がある。このような場合、絶縁粒子による凹凸の影響を抑えるために絶縁樹脂の粗面化を小さくすると配線導体の密着強度が低下してしまう。一方で、密着強度を上げるために絶縁樹脂の粗面化を大きくすると配線導体の表面の凹凸が大きくなり高周波信号の伝送特性が低下してしまう。このように、伝送特性と密着性とを両立させることが困難になる虞がある。 It is desirable that the wiring conductor of the wiring board has a flat surface, particularly in order to efficiently transmit high frequency signals. On the other hand, in order to strongly adhere the wiring conductor and the insulating layer, it is desirable to roughen the insulating resin. However, the insulating layer used for the wiring board as described above may have insulating particles dispersed at high density in order to suppress the thermal expansion rate of the wiring board and prevent the wiring conductor from being broken. In such a case, if the roughening of the insulating resin is reduced in order to suppress the influence of the unevenness caused by the insulating particles, the adhesion strength of the wiring conductor is lowered. On the other hand, if the roughening of the insulating resin is increased in order to increase the adhesion strength, the unevenness of the surface of the wiring conductor becomes large and the transmission characteristic of the high frequency signal deteriorates. As described above, it may be difficult to achieve both transmission characteristics and adhesion.

本開示の配線基板は、凹凸を含む表面を有する第１絶縁層と、凹凸を含む表面を有しているとともに、第１絶縁層に積層されており第１絶縁層と同じ種類の絶縁材料を持つ第２絶縁層と、第１絶縁層および第２絶縁層に、それぞれ４０～８０ｗｔ％の割合で含まれており、表面の一部分が第１絶縁層の表面および第２絶縁層の表面に露出している部分露出粒子を含む複数の絶縁粒子と、第１絶縁層の表面から表層内にわたり位置している第１下地金属層と、第２絶縁層の表面から表層内にわたり位置している第２下地金属層と、第１下地金属層表面に位置している第１配線導体と、第２下地金属層表面に位置している第２配線導体と、を有しており 、第１絶縁層の表面において第１配線導体が位置する領域の
部分露出粒子による凹凸の第１高低差よりも、第２絶縁層の表面において第２配線導体が位置する領域の部分露出粒子による凹凸の第２高低差の方が小さく、第２高低差は、絶縁粒子の平均粒径の２／５以下であり、第１絶縁層の表面に占める部分露出粒子の露出部分の面積割合が２０～３０％および第２絶縁層の表面に占める部分露出粒子の露出部分の面積割合が５～１２％であることを特徴とするものである。 The wiring board of the present disclosure has a first insulating layer having a surface including irregularities and a surface including irregularities, and is laminated on the first insulating layer to provide the same type of insulating material as the first insulating layer. The second insulating layer, the first insulating layer, and the second insulating layer each contain 40 to 80 wt%, and a part of the surface is exposed on the surface of the first insulating layer and the surface of the second insulating layer. A plurality of insulating particles including partially exposed particles, a first base metal layer located from the surface of the first insulating layer to the inside of the surface layer, and a second base metal layer located from the surface of the second insulating layer to the inside of the surface layer. It has two base metal layers, a first wiring conductor located on the surface of the first base metal layer, and a second wiring conductor located on the surface of the second base metal layer, and has a first insulating layer. In the area where the first wiring conductor is located on the surface of
The second height difference of the unevenness due to the partially exposed particles is smaller than the first height difference of the unevenness due to the partially exposed particles in the region where the second wiring conductor is located on the surface of the second insulating layer. The average particle size of the insulating particles is 2/5 or less, the area ratio of the exposed portion of the partially exposed particles on the surface of the first insulating layer is 20 to 30%, and the partially exposed particles occupying the surface of the second insulating layer. It is characterized in that the area ratio of the exposed portion is 5 to 12% .

本開示の配線基板によれば、高周波信号の伝送特性および配線導体と絶縁層との密着性に優れた配線基板を提供することができる。 According to the wiring board of the present disclosure, it is possible to provide a wiring board having excellent transmission characteristics of a high frequency signal and adhesion between a wiring conductor and an insulating layer.

図１は、本開示の配線基板の実施形態例を示す概略断面図である。FIG. 1 is a schematic cross-sectional view showing an embodiment of the wiring board of the present disclosure. 図２は、本開示の配線基板の第１絶縁層付近の拡大断面図である。FIG. 2 is an enlarged cross-sectional view of the vicinity of the first insulating layer of the wiring board of the present disclosure. 図３は、本開示の配線基板の第２絶縁層付近の拡大断面図である。FIG. 3 is an enlarged cross-sectional view of the vicinity of the second insulating layer of the wiring board of the present disclosure. 図４は、本開示の配線基板の配線導体付近の拡大断面図である。FIG. 4 is an enlarged cross-sectional view of the vicinity of the wiring conductor of the wiring board of the present disclosure. 図５は、本開示の配線基板の別の実施形態例を示す概略断面図である。FIG. 5 is a schematic cross-sectional view showing another embodiment of the wiring board of the present disclosure.

次に、本開示の配線基板を、図１～図４を基にして説明する。配線基板２０は、コア用絶縁層１と、ビルドアップ用絶縁層２と、絶縁粒子３と、下地金属層４と、配線導体５と、ソルダーレジスト６とを有している。配線基板２０は、例えば上面に高機能集積回路Ｓおよび複数の広帯域メモリＭが搭載される。 Next, the wiring board of the present disclosure will be described with reference to FIGS. 1 to 4. The wiring board 20 has a core insulating layer 1, a build-up insulating layer 2, insulating particles 3, a base metal layer 4, a wiring conductor 5, and a solder resist 6. The wiring board 20 has, for example, a high-performance integrated circuit S and a plurality of wideband memories M mounted on the upper surface thereof.

コア用絶縁層１は、例えば補強用のガラスクロスにエポキシ樹脂やビスマレイミドトリアジン樹脂等を含浸させた絶縁材料を含んでいる。コア用絶縁層１は、配線基板２０における補強用の支持体としての機能を有している。コア用絶縁層１は、上下に貫通する複数のスルーホール７を有している。コア用絶縁層１の厚みは、例えば２００～１２００μｍに設定されている。スルーホール７の径は、例えば５０～２００μｍに設定されている。配線基板２０は、平面視で四角形状の平板状である。また、配線基板２０の１辺の長さは２０～８０ｍｍ、厚みが０．３～１．６ｍｍ程度である。 The core insulating layer 1 contains, for example, an insulating material obtained by impregnating a reinforcing glass cloth with an epoxy resin, a bismaleimide triazine resin, or the like. The core insulating layer 1 has a function as a reinforcing support in the wiring board 20. The core insulating layer 1 has a plurality of through holes 7 penetrating vertically. The thickness of the core insulating layer 1 is set to, for example, 200 to 1200 μm. The diameter of the through hole 7 is set to, for example, 50 to 200 μm. The wiring board 20 has a rectangular flat plate shape in a plan view. The length of one side of the wiring board 20 is about 20 to 80 mm, and the thickness is about 0.3 to 1.6 mm.

コア用絶縁層１は、強化用のガラスクロスにエポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化性樹脂を含浸させたプリプレグを複数積層して加熱下でプレス加工を行うことで平板状に形成される。スルーホール７は、コア用絶縁層１に、ドリル加工、レーザー加工またはブラスト加工等の処理を行うことで形成される。コア用絶縁層１の上下表面の配線導体５同士が、スルーホール７内の配線導体５を介して電気的に接続される。 The core insulating layer 1 is formed into a flat plate by laminating a plurality of prepregs impregnated with a thermosetting resin such as epoxy resin or bismaleimide triazine resin on a reinforcing glass cloth and pressing them under heating. Ru. The through hole 7 is formed by subjecting the core insulating layer 1 to a process such as drilling, laser processing, or blasting. The wiring conductors 5 on the upper and lower surfaces of the core insulating layer 1 are electrically connected to each other via the wiring conductors 5 in the through hole 7.

ビルドアップ用絶縁層２は、第１絶縁層２ａおよび第２絶縁層２ｂを含んでいる。コア用絶縁層１の上側にある第１絶縁層２ａの上面には、主に高機能集積回路Ｓと配線基板２０下面に位置する配線導体５とをつなぐための配線導体５が位置している。コア用絶縁層１の上側にある第２絶縁層２ｂの上面には、高機能集積回路Ｓと広帯域メモリＭとをつなぐための配線導体５が位置している。第１絶縁層２ａおよび第２絶縁層２ｂは、それぞれ凹凸を含む表面を有している。 The build-up insulating layer 2 includes a first insulating layer 2a and a second insulating layer 2b. On the upper surface of the first insulating layer 2a on the upper side of the insulating layer 1 for the core, a wiring conductor 5 for connecting the high-performance integrated circuit S and the wiring conductor 5 located on the lower surface of the wiring board 20 is mainly located. .. A wiring conductor 5 for connecting the high-performance integrated circuit S and the wideband memory M is located on the upper surface of the second insulating layer 2b on the upper side of the core insulating layer 1. The first insulating layer 2a and the second insulating layer 2b each have a surface including irregularities.

第１絶縁層２ａおよび第２絶縁層２ｂは、例えばエポキシ樹脂やフェノール樹脂やシアネートエステル等の同じ種類の絶縁材料を含んでいる。これにより、第１絶縁層２ａと第２絶縁層２ｂとの間で、熱伸縮差を抑制することが可能になり、配線基板２０の反りの抑制等に有利である。なお、同じ種類とは、基本的には第１絶縁層２ａと第２絶縁層２ｂが同一の樹脂組成物のことを指す。ただし、上記樹脂を主成分とするネットワークポリマーが形成可能な組み合わせであればよい。このようなネットワークポリマーからなるいずれか１つの組み合わせであればよい。 The first insulating layer 2a and the second insulating layer 2b contain the same type of insulating material such as an epoxy resin, a phenol resin, and a cyanate ester. This makes it possible to suppress the difference in thermal expansion and contraction between the first insulating layer 2a and the second insulating layer 2b, which is advantageous for suppressing the warp of the wiring board 20 and the like. The same type basically refers to a resin composition in which the first insulating layer 2a and the second insulating layer 2b are the same. However, any combination may be used as long as it can form a network polymer containing the above resin as a main component. Any combination of such network polymers may be used.

ビルドアップ用絶縁層２は、コア用絶縁層１の上下面において、後述する配線導体５を被覆しており、互いに隣接する配線導体５同士の絶縁性を確保する機能を有している。また、ビルドアップ用絶縁層２は、配線導体５を底面とする複数のビアホール８を有している。ビアホール８は、第１絶縁層２ａに位置する第１ビアホール８ａ、および第２絶縁層２ｂに位置する第２ビアホール８ｂを有している。 The build-up insulating layer 2 covers the wiring conductors 5 described later on the upper and lower surfaces of the core insulating layer 1, and has a function of ensuring the insulation between the wiring conductors 5 adjacent to each other. Further, the build-up insulating layer 2 has a plurality of via holes 8 having a wiring conductor 5 as a bottom surface. The via hole 8 has a first via hole 8a located in the first insulating layer 2a and a second via hole 8b located in the second insulating layer 2b.

第１絶縁層２ａの厚みは、例えば３０～４０μｍに設定されている。第１絶縁層２ａは、配線導体５を底面とする複数の第１ビアホール８ａを有している。第１ビアホール８ａの径は、例えば３０～６０μｍに設定されている。 The thickness of the first insulating layer 2a is set to, for example, 30 to 40 μm. The first insulating layer 2a has a plurality of first via holes 8a having the wiring conductor 5 as the bottom surface. The diameter of the first via hole 8a is set to, for example, 30 to 60 μm.

第２絶縁層２ｂの厚みは、例えば５～１５μｍに設定されている。第２絶縁層２ｂは、配線導体５を底面とする複数の第２ビアホール８ｂを有している。第２ビアホール８ｂの径は、例えば１０～２０μｍに設定されている。 The thickness of the second insulating layer 2b is set to, for example, 5 to 15 μm. The second insulating layer 2b has a plurality of second via holes 8b having the wiring conductor 5 as the bottom surface. The diameter of the second via hole 8b is set to, for example, 10 to 20 μm.

ビルドアップ用絶縁層２は、例えばエポキシ樹脂等の熱硬化性樹脂中に絶縁粒子３を分散させた絶縁層用のフィルムを、真空下でコア用絶縁層１の上下面に配線導体５を被覆するように被着して熱硬化することで形成される。 The build-up insulating layer 2 is a film for an insulating layer in which insulating particles 3 are dispersed in a thermosetting resin such as an epoxy resin, and a wiring conductor 5 is coated on the upper and lower surfaces of the core insulating layer 1 under vacuum. It is formed by being adhered and thermally cured.

絶縁粒子３は、第１絶縁層２ａおよび第２絶縁層２ｂに位置している。絶縁粒子３は、例えばシリカ（ＳｉＯ２）や硝子やアルミナ等が挙げられる。絶縁粒子３は、例えば球状の形状を有しており、平均粒径は、例えば０．１～０．５μｍに設定されている。第１絶縁層２ａおよび第２絶縁層２ｂにおける絶縁粒子３の含有割合は、例えば４０～８０ｗｔ％に設定されている。球状の形状は、絶縁粒子３を高密度に含有するために有利である。絶縁粒子３は、第１絶縁層２ａおよび第２絶縁層２ｂにおいて、熱膨張係数を小さくして、配線導体５の断線を抑制する等の役割を有している。 The insulating particles 3 are located in the first insulating layer 2a and the second insulating layer 2b. Examples of the insulating particles 3 include silica (SiO 2 ), glass, and alumina. The insulating particles 3 have, for example, a spherical shape, and the average particle size is set to, for example, 0.1 to 0.5 μm. The content ratio of the insulating particles 3 in the first insulating layer 2a and the second insulating layer 2b is set to, for example, 40 to 80 wt%. The spherical shape is advantageous because it contains the insulating particles 3 at a high density. The insulating particles 3 have a role in the first insulating layer 2a and the second insulating layer 2b, such as reducing the coefficient of thermal expansion and suppressing disconnection of the wiring conductor 5.

絶縁粒子３は、表面の一部分が第１絶縁層２ａの表面および第２絶縁層２ｂの表面に露出している部分露出粒子３ａを含んでいる。平面視において、第１絶縁層２ａの表面に占める部分露出粒子３ａの露出部分の面積割合は、例えば２０～３０％に設定されている。また、図２に示すように、断面視における絶縁粒子３による第１絶縁層２ａの凹凸の第１高低差Ｌ１は、例えば１６０～６００ｎｍに設定されている。なお、面積割合とは、平面視における部分露出粒子３ａの露出部分の面積（Ａ）が、第１絶縁層２ａまたは第２絶縁層２ｂの表面（上記Ａを含む）に占める割合を指す。 The insulating particles 3 include partially exposed particles 3a whose surface is partially exposed on the surface of the first insulating layer 2a and the surface of the second insulating layer 2b. In a plan view, the area ratio of the exposed portion of the partially exposed particles 3a to the surface of the first insulating layer 2a is set to, for example, 20 to 30%. Further, as shown in FIG. 2, the first height difference L1 of the unevenness of the first insulating layer 2a due to the insulating particles 3 in the cross-sectional view is set to, for example, 160 to 600 nm. The area ratio refers to the ratio of the area (A) of the exposed portion of the partially exposed particles 3a in a plan view to the surface of the first insulating layer 2a or the second insulating layer 2b (including the above A).

平面視において、第２絶縁層２ｂの表面に占める部分露出粒子３ａの露出部分の面積割合は、例えば５～１２％に設定されている。また、図３に示すように、断面視における絶縁粒子３による第２絶縁層２ｂの凹凸の第２高低差Ｌ２は、例えば１０～１００ｎｍに設定されている。なお、上述のような部分露出粒子３ａの面積割合は、例えばＸＰＳ分析により算出が可能である。 In a plan view, the area ratio of the exposed portion of the partially exposed particles 3a to the surface of the second insulating layer 2b is set to, for example, 5 to 12%. Further, as shown in FIG. 3, the second height difference L2 of the unevenness of the second insulating layer 2b due to the insulating particles 3 in the cross-sectional view is set to, for example, 10 to 100 nm. The area ratio of the partially exposed particles 3a as described above can be calculated by, for example, XPS analysis.

このような第２絶縁層２ｂの表面に絶縁粒子３を露出させるには、例えば酸素プラズマ、窒素プラズマあるいはアルゴンプラズマ処理を行えばよい。プラズマ処理は、エッチング液による処理に比べて処理時間を要するものの、微細な研削が可能であるため絶縁粒子３の露出量の精度向上に有利である。 In order to expose the insulating particles 3 to the surface of such a second insulating layer 2b, for example, oxygen plasma, nitrogen plasma or argon plasma treatment may be performed. Although the plasma treatment requires a treatment time as compared with the treatment with an etching solution, it is advantageous for improving the accuracy of the exposure amount of the insulating particles 3 because fine grinding is possible.

下地金属層４は、図４に示すように、第１下地金属層４ａおよび第２下地金属層４ｂを含んでいる。第１下地金属層４ａは、後述する第１配線導体５ａの下側に対応するビルドアップ用絶縁層２の表面から表層内にわたり位置している。さらに第１下地金属層４ａは、ビアホール８の底面に露出する配線導体５の表面にも位置している。 As shown in FIG. 4, the base metal layer 4 includes a first base metal layer 4a and a second base metal layer 4b. The first base metal layer 4a is located from the surface of the build-up insulating layer 2 corresponding to the lower side of the first wiring conductor 5a, which will be described later, to the inside of the surface layer. Further, the first base metal layer 4a is also located on the surface of the wiring conductor 5 exposed on the bottom surface of the via hole 8.

第１下地金属層４ａは、例えば銅等の良導電性金属を含んでいる。このような第１下地金属層４ａは、例えば無電解めっき工法により形成される。このようなめっき工法は、比較的加工時間が短い点で有利である。 The first base metal layer 4a contains a good conductive metal such as copper. Such a first base metal layer 4a is formed by, for example, an electroless plating method. Such a plating method is advantageous in that the processing time is relatively short.

第２下地金属層４ｂは、後述する第２配線導体５ｂの下側に対応するビルドアップ用絶縁層２の表面から表層内にわたり位置している。さらに第２下地金属層４ｂは、ビアホール８の底面に露出する配線導体５の表面にも位置している。 The second base metal layer 4b is located from the surface of the build-up insulating layer 2 corresponding to the lower side of the second wiring conductor 5b, which will be described later, to the inside of the surface layer. Further, the second base metal layer 4b is also located on the surface of the wiring conductor 5 exposed on the bottom surface of the via hole 8.

第２下地金属層４ｂは、例えばチタン等の周期表における４族に属する金属、またはクロムおよびモリブデン等の周期表における６族に属する金属と、これらの金属上に位置する銅とを含んでいる。４族に属する金属、または６族に属する金属の厚みは、例えば２０～２５ｎｍに設定されている。銅の厚みは、例えば２００～２２０ｎｍに設定されている。このように、４族の金属または６族の金属の厚みを、銅の厚みよりも薄くすることで、第２下地金属層４ｂの上に位置する第２配線導体５ｂを結晶粒の凝集が無い連続した均質な結晶粒により構成することが可能になる。 The second base metal layer 4b contains a metal belonging to Group 4 in the periodic table such as titanium, or a metal belonging to Group 6 in the periodic table such as chromium and molybdenum, and copper located on these metals. .. The thickness of the metal belonging to Group 4 or the metal belonging to Group 6 is set to, for example, 20 to 25 nm. The thickness of copper is set to, for example, 200 to 220 nm. By making the thickness of the group 4 metal or the group 6 metal thinner than the thickness of copper in this way, the second wiring conductor 5b located on the second base metal layer 4b is free from agglomeration of crystal grains. It can be composed of continuous homogeneous crystal grains.

さらに、４族または６族の金属は、例えば配線導体５を構成する材料として用いられる銅の拡散を抑える点で有利である。これにより、配線導体５と絶縁層との密着強度の向上や、銅が絶縁層内に拡散することで発生するマイグレーションを抑制することが可能である。 Further, the group 4 or group 6 metal is advantageous in suppressing the diffusion of copper used as a material constituting the wiring conductor 5, for example. This makes it possible to improve the adhesion strength between the wiring conductor 5 and the insulating layer and suppress migration generated by the diffusion of copper in the insulating layer.

第２下地金属層４ｂは、ビルドアップ用絶縁層２の表面から厚み方向に２００ｎｍより小さい深さの表層内にわたり位置している。なお、上述のような第２下地金属層４ｂの厚みは、例えばオージェ分析により算出が可能である。 The second base metal layer 4b is located in the surface layer having a depth of less than 200 nm in the thickness direction from the surface of the build-up insulating layer 2. The thickness of the second base metal layer 4b as described above can be calculated by, for example, Auger analysis.

４族または６族の金属、およびこの金属上に位置する銅は、例えばスパッタ工法により形成される。このようなスパッタ工法は、４族または６族の金属、および銅をビルドアップ用絶縁層２の表面から表層内に向けて打ち込む処理を行うため、無電解めっき工法に比べてビルドアップ用絶縁層２と第２下地金属層４ｂとの密着強度の向上に有利である。これにより、第２配線導体５ｂとビルドアップ用絶縁層２との密着強度が向上するため、特に第２配線導体５ｂが微細配線の場合に有利である。 Group 4 or Group 6 metals and copper located on these metals are formed, for example, by a spattering method. In such a spatter method, the metal and copper of Group 4 or Group 6 are driven from the surface of the build-up insulating layer 2 toward the inside of the surface layer, so that the build-up insulating layer is compared with the electroless plating method. It is advantageous for improving the adhesion strength between 2 and the second base metal layer 4b. As a result, the adhesion strength between the second wiring conductor 5b and the build-up insulating layer 2 is improved, which is particularly advantageous when the second wiring conductor 5b is fine wiring.

なお、配線導体５が位置する領域以外の下地金属層４は、短絡防止のためにエッチングにより除去される。 The base metal layer 4 other than the region where the wiring conductor 5 is located is removed by etching to prevent a short circuit.

配線導体５は、コア用絶縁層１の上下面、スルーホール７内、ビルドアップ用絶縁層２の表面、およびビアホール８内に位置している。配線導体５は、第１配線導体５ａおよび第２配線導体５ｂを含んでいる。配線導体５は、例えばセミアディティブ法等のめっき工法により形成され、銅等の良導電性金属を含んでいる。 The wiring conductor 5 is located in the upper and lower surfaces of the core insulating layer 1, in the through hole 7, the surface of the build-up insulating layer 2, and in the via hole 8. The wiring conductor 5 includes a first wiring conductor 5a and a second wiring conductor 5b. The wiring conductor 5 is formed by a plating method such as a semi-additive method, and contains a good conductive metal such as copper.

第１配線導体５ａは、第１絶縁層２ａの表面および第１ビアホール８ａ内に位置しており、上述のように主に高機能集積回路Ｓと配線基板２０下面に位置する配線導体５とをつなぐ役割を有している。第１配線導体５ａの線幅は、例えば１５～２０μｍであり、厚さは、例えば１０～２０μｍに設定されている。このように、第１配線導体５ａは、比較的大きな線幅および厚さを有しているので、上述した第１絶縁層２ａの凹凸の第１高低差Ｌ１が１６０～６００ｎｍという比較的大きな値であっても、凹凸の影響を受けにくい。 The first wiring conductor 5a is located on the surface of the first insulating layer 2a and in the first via hole 8a, and mainly comprises the high-performance integrated circuit S and the wiring conductor 5 located on the lower surface of the wiring board 20 as described above. It has a role of connecting. The line width of the first wiring conductor 5a is set to, for example, 15 to 20 μm, and the thickness is set to, for example, 10 to 20 μm. As described above, since the first wiring conductor 5a has a relatively large line width and thickness, the first height difference L1 of the unevenness of the first insulating layer 2a described above is a relatively large value of 160 to 600 nm. Even so, it is not easily affected by unevenness.

第２配線導体５ｂは、第２絶縁層２ｂの表面および第２ビアホール８ｂ内に位置しており、上述のように主に高機能集積回路Ｓと広帯域メモリＭとをつなぐ役割を有している。第２配線導体５ｂの線幅は、例えば２～６μｍであり、厚さは、例えば２～１５μｍに設定されている。このように、第２配線導体５ｂは、微細な線幅および厚さを有しているものの、上述した第２絶縁層２ｂの凹凸の第２高低差Ｌ２が１０～１００ｎｍという比較的小さな値であることから凹凸の影響が小さい。 The second wiring conductor 5b is located on the surface of the second insulating layer 2b and in the second via hole 8b, and has a role of mainly connecting the high-performance integrated circuit S and the wideband memory M as described above. .. The line width of the second wiring conductor 5b is set to, for example, 2 to 6 μm, and the thickness is set to, for example, 2 to 15 μm. As described above, although the second wiring conductor 5b has a fine line width and thickness, the second height difference L2 of the unevenness of the above-mentioned second insulating layer 2b is a relatively small value of 10 to 100 nm. Because of this, the effect of unevenness is small.

ソルダーレジスト６は、最上層および最下層の第２絶縁層２ｂ表面に位置している。ソルダーレジスト６は、最上層の第２配線導体５ｂを露出する開口６ａ、および最下層の第２配線導体５ｂを露出する開口６ｂを有している。ソルダーレジスト６は、例えばアクリル変性エポキシ樹脂等の感光性を有する熱硬化性樹脂のフィルムを第２絶縁層２ｂの表面に貼着し、露光および現像により開口６ａ、６ｂを形成して熱硬化することで形成される。 The solder resist 6 is located on the surface of the second insulating layer 2b of the uppermost layer and the lowermost layer. The solder resist 6 has an opening 6a that exposes the second wiring conductor 5b in the uppermost layer and an opening 6b that exposes the second wiring conductor 5b in the lowermost layer. In the solder resist 6, a film of a photosensitive thermosetting resin such as an acrylic modified epoxy resin is attached to the surface of the second insulating layer 2b, and openings 6a and 6b are formed by exposure and development and thermosetting. It is formed by.

上述のように、本開示の配線基板２０は、第１絶縁層２ａ表面の凹凸の第１高低差Ｌ１よりも、第２絶縁層２ｂ表面の凹凸の第２高低差Ｌ２の方が小さい。そして、第２高低差Ｌ２は、絶縁粒子の平均粒径の２／５以下に抑えられている。これによって、第２絶縁層２ｂの表面に、第１配線導体５ａの配線幅および厚みよりも微細で、かつ平坦状の表面を有する第２配線導体５ｂを位置させることができる。 As described above, in the wiring board 20 of the present disclosure, the second height difference L2 of the unevenness on the surface of the second insulating layer 2b is smaller than the first height difference L1 of the unevenness on the surface of the first insulating layer 2a. The second height difference L2 is suppressed to 2/5 or less of the average particle size of the insulating particles. As a result, the second wiring conductor 5b having a flat surface that is finer than the wiring width and thickness of the first wiring conductor 5a can be positioned on the surface of the second insulating layer 2b.

第２高低差Ｌ２が、絶縁粒子３の平均粒径の２／５以下（Ｌ２＝０も含む）であれば、平均値として、絶縁粒子３（特に部分露出粒子３ａ）のうち第２絶縁層２ｂ内に位置する部分が露出する部分よりも大きくなり絶縁粒子３の脱落抑制に有利である。 If the second height difference L2 is 2/5 or less of the average particle size of the insulating particles 3 (including L2 = 0), the second insulating layer of the insulating particles 3 (particularly the partially exposed particles 3a) has an average value. The portion located in 2b becomes larger than the exposed portion, which is advantageous for suppressing the falling off of the insulating particles 3.

第２高低差Ｌ２が、絶縁粒子３の平均粒径の１／１０未満であれば、第２絶縁層２ｂを熱硬化するときに生成される脆弱な表面層の影響を強く受けて、第２配線導体５ｂと第２絶縁層２ｂとの密着性が不十分になる虞がある。また、第２絶縁層２ｂ表面の第２下地金属層４ｂをエッチングにより除去するときに、第２配線導体５ｂ直下の第２下地金属層４ｂにエッチング液が浸入し易くなり、第２配線導体５ｂが剥がれ易くなる虞がある。 If the second height difference L2 is less than 1/10 of the average particle size of the insulating particles 3, the second insulating layer 2b is strongly affected by the fragile surface layer generated when the second insulating layer 2b is thermally cured. There is a risk that the adhesion between the wiring conductor 5b and the second insulating layer 2b will be insufficient. Further, when the second base metal layer 4b on the surface of the second insulating layer 2b is removed by etching, the etching solution easily penetrates into the second base metal layer 4b directly under the second wiring conductor 5b, and the second wiring conductor 5b May be easily peeled off.

第２高低差Ｌ２が、絶縁粒子３の平均粒径の２／５以下であるとともに１／１０以上であれば、第２絶縁層２ｂの表面に第２配線導体５ｂを形成するのに適した樹脂表面状態を得ることが可能になり、第２絶縁層２ｂと第２配線導体５ｂとの密着強度の向上を図りつつ高周波信号の伝送特性に優れた配線形成に有利となる。 If the second height difference L2 is 2/5 or less and 1/10 or more of the average particle size of the insulating particles 3, it is suitable for forming the second wiring conductor 5b on the surface of the second insulating layer 2b. It becomes possible to obtain a resin surface state, which is advantageous for wiring formation having excellent high-frequency signal transmission characteristics while improving the adhesion strength between the second insulating layer 2b and the second wiring conductor 5b.

第２高低差Ｌ２が、絶縁粒子３の平均粒径の２／５を超える場合であれば、第２絶縁層２ｂに位置する絶縁粒子３が脱落し易くなるために、第２絶縁層２ｂの表層の凹凸が大きくなってしまい、微細配線加工が困難になる。また、第２絶縁層２ｂの表層の凹凸の影響を強く受けて、第２配線導体５ｂ表面の凹凸が大きくなってしまい、高周波信号の伝送特性が低下してしまう虞がある。 When the second height difference L2 exceeds 2/5 of the average particle size of the insulating particles 3, the insulating particles 3 located in the second insulating layer 2b are likely to fall off, so that the second insulating layer 2b The unevenness of the surface layer becomes large, which makes it difficult to process fine wiring. Further, the unevenness of the surface layer of the second insulating layer 2b is strongly influenced by the unevenness of the surface of the second wiring conductor 5b, which may deteriorate the transmission characteristics of the high frequency signal.

第１高低差Ｌ１は、絶縁粒子３の粒径に対して任意に設定できる。ただし、第１絶縁層２ａにある絶縁粒子３の脱落抑制という観点から、絶縁粒子３の平均粒径の４／５以下とするのがよい。 The first height difference L1 can be arbitrarily set with respect to the particle size of the insulating particles 3. However, from the viewpoint of suppressing the falling off of the insulating particles 3 in the first insulating layer 2a, it is preferable that the average particle size of the insulating particles 3 is 4/5 or less.

さらに、本開示の配線基板２０は、第２下地金属層４ｂが、ビルドアップ用絶縁層２の表面から表層内にかけて位置していることから、ビルドアップ用絶縁層２と第２下地金属層４ｂとの密着強度が強い。これにより、第２下地金属層４ｂ上に位置する第２配線導体５ｂとビルドアップ用絶縁層２との密着強度も強くなる。 Further, in the wiring board 20 of the present disclosure, since the second base metal layer 4b is located from the surface of the build-up insulating layer 2 to the inside of the surface layer, the build-up insulating layer 2 and the second base metal layer 4b are located. Strong adhesion with. As a result, the adhesion strength between the second wiring conductor 5b located on the second base metal layer 4b and the build-up insulating layer 2 is also increased.

これらのことから、本開示の配線基板２０によれば、高周波信号の伝送特性および配線導体と絶縁層との密着性に優れた配線基板を提供することができる。 From these facts, according to the wiring board 20 of the present disclosure, it is possible to provide a wiring board excellent in transmission characteristics of a high frequency signal and adhesion between a wiring conductor and an insulating layer.

なお、本開示は、上述の実施形態の一例に限定されるものではなく、本開示の要旨を逸脱しない範囲であれば種々の変更は可能である。例えば、上述の実施形態の一例においては、第１下地金属層４ａが、無電解銅めっきにより構成されている一例を示したが、第２下地金属層４ｂと同様に、例えばチタン等の周期表における４族に属する金属、またはクロムおよびモリブデン等の周期表における６族に属する金属を含んでいても構わない。第１下地金属層４ａが、４族に属する金属または６族に属する金属を含んでいる場合には、第１下地金属層４ａは、第１絶縁層２ａの表面から厚み方向に６００ｎｍより小さい深さの表層内にわたり位置している。この場合、生産時間が長くなるものの、第１絶縁層２ａと第１配線導体５ａとの密着強度の向上には有利である。 The present disclosure is not limited to the above-mentioned example of the embodiment, and various changes can be made as long as it does not deviate from the gist of the present disclosure. For example, in the above-mentioned example of the embodiment, an example in which the first base metal layer 4a is composed of electroless copper plating is shown, but like the second base metal layer 4b, for example, a periodic table of titanium or the like. It may contain a metal belonging to Group 4 in the above, or a metal belonging to Group 6 in the periodic table such as chromium and molybdenum. When the first base metal layer 4a contains a metal belonging to Group 4 or a metal belonging to Group 6, the first base metal layer 4a has a depth smaller than 600 nm in the thickness direction from the surface of the first insulating layer 2a. It is located within the surface layer of the metal. In this case, although the production time becomes long, it is advantageous for improving the adhesion strength between the first insulating layer 2a and the first wiring conductor 5a.

また、図５に示すように、第２ビアホール８ｂの壁面と、第２下地金属層４ｂとの間に、中間層７が位置していても構わない。中間層７は、例えば第２絶縁層２ｂの一部と、絶縁粒子３と、銅を含有する金属相とを含んでいる。銅を含有する金属相は、第２ビアホール８ｂ内に位置する第２配線導体５ｂを構成する金属相の一部を含んでいる。第２ビアホール８ｂの壁面において、ともに銅を含む第２配線導体５ｂと中間層７とが第２下地金属層４ｂを挟んで位置している。なお、中間層７における金属相は、単に中間層７全体と同じ程度の範囲に存在するものであるため図示を省略している。 Further, as shown in FIG. 5, the intermediate layer 7 may be located between the wall surface of the second via hole 8b and the second base metal layer 4b. The intermediate layer 7 contains, for example, a part of the second insulating layer 2b, the insulating particles 3, and a metal phase containing copper. The copper-containing metal phase contains a part of the metal phase constituting the second wiring conductor 5b located in the second via hole 8b. On the wall surface of the second via hole 8b, a second wiring conductor 5b containing copper and an intermediate layer 7 are located so as to sandwich the second base metal layer 4b. Since the metal phase in the intermediate layer 7 simply exists in the same range as the entire intermediate layer 7, the illustration is omitted.

中間層７の厚みは、例えば１００～１０００ｎｍ程度に設定される。１００ｎｍよりも小さい場合には、第２配線導体５ｂと第２ビアホール８ｂとの密着力の向上が望めない虞がある。１０００ｎｍよりも大きい場合には、第２ビアホール８ｂ同士の間の絶縁信頼性が低下する虞がある。 The thickness of the intermediate layer 7 is set to, for example, about 100 to 1000 nm. If it is smaller than 100 nm, it may not be possible to improve the adhesion between the second wiring conductor 5b and the second via hole 8b. If it is larger than 1000 nm, the insulation reliability between the second via holes 8b may decrease.

このような中間層７は、例えば次のようにして形成することができる。まず、第２絶縁層２ｂに、配線導体５を底面とする孔をレーザー加工により形成する。このとき、孔の壁面には、レーザー加工時の熱により微細な凹凸が形成される。凹凸の表面は、第２絶縁層２ｂおよび絶縁粒子３により構成される。凹凸の程度は、最大高さで３００～５００ｎｍ程度に設定する。レーザー加工条件は、例えば照射エネルギーを０．０５～０．７Wに設定する。さらに限定すれば０．１～０．３Ｗの範囲がより顕著に本技術を発現させることができる。 Such an intermediate layer 7 can be formed, for example, as follows. First, a hole having a wiring conductor 5 as a bottom surface is formed in the second insulating layer 2b by laser processing. At this time, fine irregularities are formed on the wall surface of the hole due to the heat generated during laser processing. The uneven surface is composed of the second insulating layer 2b and the insulating particles 3. The degree of unevenness is set to about 300 to 500 nm at the maximum height. As for the laser processing conditions, for example, the irradiation energy is set to 0.05 to 0.7 W. Further limiting, the range of 0.1 to 0.3 W can express the present technology more remarkably.

次に、孔の内面をデスミア処理により洗浄することで第２ビアホール８ｂを形成する。デスミア処理条件は、例えば濃度０．２～０．５ｍoｌ/Ｌの過マンガン酸塩とアルカリ金属水酸化物とを含む薬液を温度３０～８０℃に調整して、時間０．５～１０分間処理する。 Next, the inner surface of the hole is washed by desmear treatment to form the second via hole 8b. The desmear treatment conditions are as follows: for example, a chemical solution containing a permanganate having a concentration of 0.2 to 0.5 mol / L and an alkali metal hydroxide is adjusted to a temperature of 30 to 80 ° C. and treated for 0.5 to 10 minutes. do.

次に、第２ビアホール８ｂの壁面および配線導体５の表面に第２下地金属層４ｂを形成する。第２下地金属層４ｂの厚みは、孔の壁面の凹凸を完全に被覆しないように、周期表において４族または６族に属する金属層の厚みを、例えば５～２０ｎｍ程度に、銅の厚みを５０～１５０ｎｍ程度に設定する。 Next, the second base metal layer 4b is formed on the wall surface of the second via hole 8b and the surface of the wiring conductor 5. The thickness of the second base metal layer 4b is such that the thickness of the metal layer belonging to Group 4 or Group 6 in the periodic table is set to, for example, about 5 to 20 nm, and the thickness of copper is set so as not to completely cover the unevenness of the wall surface of the hole. Set to about 50 to 150 nm.

最後に第２ビアホール８ｂ内にセミアディティブ法により銅を含む第２配線導体５ｂを形成する。このとき、第２配線導体５ｂを構成する金属相の一部が、第２下地金属層４ｂを介して孔の壁面の凹凸にも入り込み、凹凸表面を構成する第２絶縁層２ｂおよび絶縁粒子３と密着する。この第２絶縁層２ｂの凹凸部分と、絶縁粒子３と、入り込んだ金属相とが層状になる。これにより、第２絶縁層２ｂの一部と、絶縁粒子３と、銅を含有する金属相と、を含む中間層７が形成される。 Finally, a second wiring conductor 5b containing copper is formed in the second via hole 8b by a semi-additive method. At this time, a part of the metal phase constituting the second wiring conductor 5b also enters the unevenness of the wall surface of the hole via the second base metal layer 4b, and the second insulating layer 2b and the insulating particles 3 forming the uneven surface are formed. In close contact with. The uneven portion of the second insulating layer 2b, the insulating particles 3, and the invading metal phase are layered. As a result, the intermediate layer 7 including a part of the second insulating layer 2b, the insulating particles 3, and the metal phase containing copper is formed.

このように、中間層７においては、第２配線導体５ｂを構成する金属相の一部が、第２下地金属層４ｂを介して第２絶縁層２ｂおよび絶縁粒子３と密着した状態で位置している。中間層７に位置する金属相と、第２配線導体５ｂを構成する金属相とは連続した結晶で構成されている。このため、第２配線導体５ｂは、第２ビアホール８ｂのように接触面積の小さな小径のビアホール８とも大きな密着力で位置することができる。 As described above, in the intermediate layer 7, a part of the metal phase constituting the second wiring conductor 5b is located in close contact with the second insulating layer 2b and the insulating particles 3 via the second base metal layer 4b. ing. The metal phase located in the intermediate layer 7 and the metal phase constituting the second wiring conductor 5b are composed of continuous crystals. Therefore, the second wiring conductor 5b can be positioned with a large adhesion force even with a small diameter via hole 8 having a small contact area such as the second via hole 8b.

なお、中間層７は、第２ビアホール８ｂの壁面に加えて底面の周辺に位置していても構わない。このような底面周辺の中間層７は、例えば底面から最大で６μｍの範囲に存在している。この場合には、第２配線導体５ｂと第２ビアホール８ｂとの密着力の向上に有利である。 The intermediate layer 7 may be located around the bottom surface in addition to the wall surface of the second via hole 8b. Such an intermediate layer 7 around the bottom surface exists, for example, in a range of up to 6 μm from the bottom surface. In this case, it is advantageous to improve the adhesion between the second wiring conductor 5b and the second via hole 8b.

また、第１ビアホール８ａの壁面と、第１下地金属層４ａとの間に、中間層７が位置していても構わない。この場合には、第１配線導体５ａと第１ビアホール８ａとの密着力の向上に有利である。 Further, the intermediate layer 7 may be located between the wall surface of the first via hole 8a and the first base metal layer 4a. In this case, it is advantageous to improve the adhesion between the first wiring conductor 5a and the first via hole 8a.

２ａ 第１絶縁層
２ｂ 第２絶縁層
３ 絶縁粒子
３ａ 部分露出粒子
４ａ 第１下地金属層
４ｂ 第２下地金属層
５ａ 第１配線導体
５ｂ 第２配線導体
７ 中間層
Ｌ１ 第１高低差
Ｌ２ 第２高低差
２０ 配線基板 2a 1st insulating layer 2b 2nd insulating layer 3 Insulating particles 3a Partially exposed particles 4a 1st base metal layer 4b 2nd base metal layer 5a 1st wiring conductor 5b 2nd wiring conductor 7 Intermediate layer L1 1st height difference L2 2nd Height difference 20 Wiring board

Claims (4)

凹凸を含む表面を有する第１絶縁層と、
凹凸を含む表面を有しているとともに、前記第１絶縁層に積層されており該第１絶縁層と同じ種類の絶縁材料を持つ第２絶縁層と、
前記第１絶縁層および前記第２絶縁層に、それぞれ４０～８０ｗｔ％の割合で含まれており、表面の一部分が前記第１絶縁層の表面および前記第２絶縁層の表面に露出している部分露出粒子を含む複数の絶縁粒子と、
前記第１絶縁層の表面から表層内にわたり位置している第１下地金属層と、
前記第２絶縁層の表面から表層内にわたり位置している第２下地金属層と、
前記第１下地金属層表面に位置している第１配線導体と、
前記第２下地金属層表面に位置している第２配線導体と、
を有しており 、
前記第１絶縁層の表面において前記第１配線導体が位置する領域の前記部分露出粒子による凹凸の第１高低差よりも、前記第２絶縁層の表面において前記第２配線導体が位置する領域の前記部分露出粒子による凹凸の第２高低差の方が小さく、前記第２高低差は、前記絶縁粒子の平均粒径の２／５以下であり、前記第１絶縁層の表面に占める前記部分露出粒子の露出部分の面積割合が２０～３０％および前記第２絶縁層の表面に占める前記部分露出粒子の露出部分の面積割合が５～１２％であることを特徴とする配線基板。 A first insulating layer having a surface including irregularities,
A second insulating layer having a surface including unevenness and being laminated on the first insulating layer and having the same type of insulating material as the first insulating layer,
The first insulating layer and the second insulating layer are each contained in a proportion of 40 to 80 wt%, and a part of the surface is exposed on the surface of the first insulating layer and the surface of the second insulating layer. With multiple insulating particles, including partially exposed particles,
The first base metal layer located from the surface of the first insulating layer to the inside of the surface layer,
A second base metal layer located from the surface of the second insulating layer to the inside of the surface layer,
The first wiring conductor located on the surface of the first base metal layer and
The second wiring conductor located on the surface of the second base metal layer and
Have,
In the region where the second wiring conductor is located on the surface of the second insulating layer, rather than the first height difference of the unevenness due to the partially exposed particles in the region where the first wiring conductor is located on the surface of the first insulating layer. The second height difference of the unevenness due to the partially exposed particles is smaller, the second height difference is 2/5 or less of the average particle size of the insulating particles, and the portion occupied on the surface of the first insulating layer. A wiring board characterized in that the area ratio of the exposed portion of the exposed particles is 20 to 30% and the area ratio of the exposed portion of the partially exposed particles to the surface of the second insulating layer is 5 to 12% . 前記第２下地金属層は、周期表において４族に属する金属または６族に属する金属を含んでいることを特徴とする請求項１に記載の配線基板。 The wiring substrate according to claim 1, wherein the second base metal layer contains a metal belonging to Group 4 or a metal belonging to Group 6 in the periodic table. 前記第２下地金属層は、前記第２絶縁層の表面から厚み方向に２００ｎｍより小さい深さの前記表層内に位置していることを特徴とする請求項１または２に記載の配線基板。 The wiring board according to claim 1 or 2, wherein the second base metal layer is located in the surface layer having a depth of less than 200 nm in the thickness direction from the surface of the second insulating layer. 前記第２配線導体が銅を含有しており、前記第２絶縁層は、前記第２下地金属層が位置する壁面を含むビアホールを有しており、前記第２下地金属層と前記ビアホールの前記壁面との間には、前記第２絶縁層の一部と、前記絶縁粒子と、銅を含有する金属相と、を含む中間層が位置していることを特徴とする請求項１乃至３のいずれかに記載の配線基板。 The second wiring conductor contains copper, and the second insulating layer has a via hole including a wall surface on which the second base metal layer is located, and the second base metal layer and the via hole are described. A third aspect of the present invention, wherein an intermediate layer containing a part of the second insulating layer, the insulating particles, and a metal phase containing copper is located between the wall surface and the wall surface. The wiring board described in either.
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