JP6984856B2 - Manufacturing method of semiconductor substrate - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor substrate.

A technique for forming a GaN layer having a low dislocation density by a hydride vapor phase growth method (Hydride Vapor Phase Epitaxy, hereinafter referred to as "HVPE method") has been proposed.

For example, in Patent Document 1, a plurality of masks having different mask widths are formed on a GaN film provided on a sapphire substrate, and GaN is crystal-grown from the openings of the masks by the HVPE method to open the masks. A thick GaN layer containing a small facet structure crystal-grown from a portion and a huge facet structure in which the small facet structures are combined is formed, and at this time, the direction of dislocation travel is bent by the small facet structure and the huge facet structure. It is disclosed that the dislocations reaching the surface of the GaN layer are reduced.

In Patent Documents 2 to 4, a GaN layer having a linear V-groove made of a facet is formed by regularly forming stripe mask patterns on a base substrate and crystal-growing GaN from the openings of those masks by the HVPE method. At this time, dislocations gather at the bottom of the V-groove, and it is disclosed that other regions with low dislocation densities are used for important parts of the device.

Japanese Unexamined Patent Publication No. 2004-193371 Japanese Unexamined Patent Publication No. 2009-057276 Japanese Unexamined Patent Publication No. 2006-066496 Japanese Unexamined Patent Publication No. 2003-183100

GaN is expected as a material for power devices in power electronics. Then, in order to realize a GaN-based power device for high withstand voltage and large current applications such as for industrial use and automobiles, it is desired to establish a technology for manufacturing a GaN substrate having a lower dislocation density than conventional light emitting devices such as LEDs. It is rare.

However, it is difficult to realize the low dislocation density required for a material for a power device by the method for forming a GaN layer disclosed in Patent Document 1. Further, the GaN layer obtained by the methods disclosed in Patent Documents 2 to 4 is not suitable for a material for a power device that requires a large area and a low dislocation density region.

An object of the present invention is to provide a method for manufacturing a large area semiconductor substrate having a low dislocation density suitable as a material for a power device.

In the present invention, a plurality of triangular facet structures having a width of 100 μm or more in the predetermined direction in which the semiconductor is crystal-grown so that the cross-sectional shape along the predetermined direction becomes a triangle are arranged side by side in the predetermined direction. The semiconductor crystal grows from each of the diagonal facet surfaces of the triangular facet structures so as to embed the recesses between the steps to be formed in, each of the plurality of triangular facet structures, and the adjacent triangular facet structures. The semiconductor grows on the same crystal growth plane as the bottom surface of the triangular facet structure in succession to the step of forming the first thick film growth layer associated with each other and the top of each of the plurality of triangular facet structures. A step of forming a second thick film growth layer so that the cross-sectional shape along the predetermined direction becomes an inverted triangle is provided, and the plurality of the second thick film growth layers on the plurality of triangular facet structures are united. In the step of burying the first thick film growth layer and forming the first thick film growth layer, the rearrangements are concentrated at the association portion of the first thick film growth layer, while the second thick film growth. The step of forming the layer is a method for manufacturing a semiconductor substrate in which dislocations are dispersed on the surface of the second thick film growth layer.

According to the present invention, a plurality of large triangular facet structures having a width of 100 μm or more in which semiconductors are grown are arranged side by side in a predetermined direction so that the cross-sectional shape along a predetermined direction becomes a triangle. Then, from each of the diagonal facet planes of those large triangular facet structures, the semiconductors grow into crystals and form the first thick film growth layer so as to embed the recesses between the adjacent triangular facet structures, and they. On each of the large triangular facet structures, the semiconductor grows on the same crystal growth plane as the bottom surface of the triangular facet structure, and the cross-sectional shape along the predetermined direction becomes an inverted triangle. Finally, a plurality of second thick film growth layers on a plurality of triangular facet structures are united to embed the first thick film growth layer, thereby reducing and dispersing dislocations. As a result, it is possible to manufacture a large-area semiconductor substrate having a low dislocation density suitable as a material for a power device from the semiconductor layer including these triangular facet structures and the first and second thick film growth layers.

It is a perspective view of the base substrate. It is a top view of the base substrate. It is sectional drawing of IC-IC in FIG. 1B. It is a top view which shows the 1st modification of a mask pattern. It is a top view which shows the 2nd modification of the mask pattern. It is a top view which shows the 3rd modification of the mask pattern. It is a top view which shows the 4th modification of the mask pattern. It is a perspective view which shows the triangular facet structure formation step. It is a top view which shows the triangular facet structure formation step. FIG. 3B is a cross-sectional view taken along the line IIIC-IIIC in FIG. 3B. It is sectional drawing which shows the first half of the thick film growth step. It is sectional drawing which shows the deformation example of the first half of a thick film growth step. It is sectional drawing which shows the latter half of a thick film growth step. It is sectional drawing which shows the modification of the latter half of a thick film growth step.

Hereinafter, embodiments will be described in detail.

The method for manufacturing a semiconductor substrate according to the embodiment includes a base substrate preparation step and a semiconductor crystal growth step. Although a manufacturing example of a GaN substrate using GaN as a semiconductor is shown here, the semiconductor is not particularly limited to this, and the semiconductor may be AlGaN, InGaN, InAlGaN, InAlN, InN, or the like.

(Base substrate preparation process)
In the base substrate preparation step, the base substrate 10 as shown in FIGS. 1A to 1C used for manufacturing the semiconductor substrate is prepared.

The base substrate 10 has a substrate main body 11 and a mask 12 provided in a stripe shape on the substrate main body 11.

It is preferable that the substrate main body 11 is made of GaN of the same semiconductor in which the surface of the substrate exposed from the opening 13 between the masks 12 is later crystal-grown from the opening 13. The substrate body 11 is preferably a GaN substrate or, for example, a sapphire substrate, a ZnO substrate, a SiC substrate, or the like on which a GaN film is provided on the surface of the substrate. The main surface of the GaN constituting the substrate surface is not particularly limited, but is preferably the c-plane. The substrate body 11 may be composed of, for example, a sapphire substrate, a ZnO substrate, a SiC substrate, or the like.

The mask 12 is made of, for example, silicon dioxide (SiO ₂ ), silicon nitride (SiNx), or the like. The mask 12 includes a portion in the plane on the substrate main body 11 in which the mask 12 and the openings 13 where the substrate main body 11 is exposed are alternately arranged in a predetermined direction, and the openings 13 to GaN as described later. However, it may be provided so as to form a triangular facet structure in which crystals are grown so that the cross-sectional shape along the predetermined direction becomes a triangle. Specifically, the striped mask 12 has, for example, the a-axis of the substrate main body 11 exposed from the opening 13 in the mask width direction, that is, in the predetermined direction in which the mask 12 and the opening 13 are alternately arranged. It is preferable that it is provided so as to be in the direction or the m-axis direction.

In the mask width direction, the width w of the mask 12 is 10 μm or more and 100 μm or less, preferably 10 μm or more and 50 μm or less, and more preferably 10 μm or more and 20 μm or less. The width w of the mask 12 is preferably constant in the length direction, and the width w of the mask 12 is preferably the same as each other. The width W of the opening 13 is preferably 100 μm or more and 1000 μm or less, more preferably 100 μm or more and 900 μm or less, and further preferably 100 μm or more and 500 μm or less. It is preferable that the width W of the opening 13 is also constant in the length direction, and it is preferable that the width W of the opening 13 is also the same as each other. The ratio (W / w) of the width W of the opening 13 to the width w of the mask 12 is 5 or more and 50 or less, preferably 5 or more and 25 or less, and more preferably 10 or more and 25 or less. If at least one of the width w of the mask 12 and the width W of the opening 13 is not constant in the length direction, the mask 12 may have a relationship between the mask 12 in any portion and the opening 13 adjacent to the mask 12. The ratio of the width W of the opening 13 to the width w may be 5 or more and 50 or less. Further, when at least one of the width w of the mask 12 and the width W of the opening 13 is not the same as each other, the opening with respect to the width w of the mask 12 in the relationship between one of the masks 12 and the opening 13 adjacent thereto. The ratio (W / w) of the width W of the portion 13 may be 5 or more and 50 or less.

The period P of the mask 12, which is the sum of the width w of the mask 12 and the width W of the opening 13, is preferably 100 μm or more and 1000 μm or less, and more preferably 100 μm or more and 500 μm or less. The thickness of the mask 12 is preferably 10 nm or more and 500 nm or less, and more preferably 10 nm or more and 200 nm or less.

The pattern of the mask 12 includes a portion in the surface on the substrate main body 11 in which the mask 12 and the openings 13 where the substrate main body 11 is exposed are alternately arranged in a predetermined direction, and in the predetermined direction. The width w of the mask 12 is 10 μm or more and 100 μm or less, the ratio (W / w) of the width W of the opening 13 to the width w of the mask 12 is 5 or more and 50 or less, and GaN is formed from the opening 13 along a predetermined direction. The configuration is not limited to the above-mentioned striped mask pattern as long as it forms a triangular facet structure in which crystals are grown so that the cross-sectional shape is triangular. The mask pattern of the mask 12 may be, for example, an opening 13 having an arbitrary shape formed in the mask 12 in a plan view as shown in FIG. 2A, and the mask in a plan view as shown in FIG. 2B. A regular hexagonal opening 13 may be formed in the 12 in a honeycomb shape, and as shown in FIG. 2C, a circular opening 13 is formed in the mask 12 so as to form a triangular lattice in a plan view. As shown in FIG. 2D, the mask 12 may have a rectangular opening 13 formed so as to form a square grid.

According to the base substrate 10 having the above configuration, the mask 12 and the openings 13 in which the substrate main body 11 is exposed are alternately arranged in the mask width direction in the plane on the substrate main body 11. Since the width w of the mask 12 is 10 μm or more and 100 μm or less and the ratio (W / w) of the width W of the opening 13 to the width w of the mask 12 is 5 or more and 50 or less, if the crystal growth conditions of GaN are appropriately selected, As will be described later, from these openings, a plurality of large triangular facet structures in which GaN is crystal-grown so that the cross-sectional shape along the mask width direction becomes a triangle are arranged side by side in the mask width direction. Can be formed into. Then, from each of the diagonal facet planes of those large triangular facet structures, GaN crystal grows to form a first thick film growth layer so as to embed the recesses between the triangular facet structures adjacent to each other, and at the same time, they are large. On each of the triangular facet structures, a second thick film growth layer is formed so that GaN crystal grows on the same crystal growth surface as the bottom surface of the triangular facet structure and the cross-sectional shape along the mask width direction becomes an inverted triangle. Following the completion of the formation and finally the embedding of the recesses between the adjacent triangular facet structures by the first thick film growth layer, the plurality of second thick film growth layers on the plurality of triangular facet structures By coalescing and burying the first thick film growth layer, dislocation reduction and dispersion effects are obtained, and as a result, power devices from these triangular facet structures and the GaN layer including the first and second thick film growth layers. It is possible to manufacture a large-area GaN substrate with a low dislocation density suitable as a material.

It is considered that the dielectric mask 12 not only functions as a growth inhibitory layer for dislocations of the substrate main body 11, but also functions as a pump that supplies GaN for crystal growth to the growth portion. If the width w of the mask 12 is 10 μm or more and 100 μm or less and the ratio (W / w) of the width W of the opening 13 to the width w of the mask 12 is 5 or more and 50 or less, abnormal crystal growth is performed on the mask 12. It is considered that a large triangular facet structure can be stably formed without the occurrence of.

(Semiconductor crystal growth process)
In the semiconductor crystal growth step, a semiconductor GaN crystal is used by contacting the raw material gas with the surface of the base substrate 10 on the mask 12 side in the reaction chamber by the HVPE method of the vapor phase growth method using a vapor phase growth apparatus. Make growth. The raw material gas, GaCl gas is mentioned as Ga source gas, NH ₃ gas can be cited as an N source gas. Further, examples of the carrier gas include H ₂ gas and N ₂ gas. At this time, the MOVPE method (Metal-Organic Vapor Phase Epitaxy) or the like may be used as the vapor phase growth method.

<Triangular facet structure formation step>
Since the crystal growth of GaN is restricted by the mask 12 on the substrate 10, the GaN grows epitaxially from each opening 13 between the masks 12. Therefore, if the c-plane GaN is exposed from the opening 13 on the main surface of the substrate body 11, the GaN grows on the c-plane. At this time, as shown in FIGS. 3A to 3C, the GaN forms a top in each opening 13 in which the dimensions in the mask width direction are gradually shortened from both sides as the crystal grows, and then finally converges linearly. At this time, a large triangular facet structure 21 having a width of 100 μm or more is formed, which is formed in the shape of a triangular protrusion having an apex on the cross-sectional shape along the mask width direction. Here, in the "triangle" in the present application, in addition to the triangle composed of the sides of the three line segments, at least one of the three sides bulges outward or immerses inward in a bow shape. Approximately triangular triangles are also included.

The triangular facet structure 21 is formed for each opening 13 so that a plurality of the triangular facet structures 21 are arranged side by side at intervals in the mask width direction, and as a whole, the triangular facet structure 21 and the mask 12 are alternately striped. It constitutes the provided GaN layer 20 (semiconductor layer). That is, the triangular facet structure 21 is formed corresponding to each opening 13, and is not formed by combining the plurality of triangular facet structures 21 formed in the plurality of openings 13.

In the mask width direction, the distance between the triangular facet structures 21 is the same as the width w of the mask 12, preferably 10 μm or more and 100 μm or less, more preferably 10 μm or more and 50 μm or less, and further preferably 10 μm or more and 20 μm or less. The width (bottom width) of the triangular facet structure 21 is the same as the width W of the opening 13, preferably 100 μm or more and 1000 μm or less, more preferably 100 μm or more and 900 μm or less, and further preferably 100 μm or more and 500 μm or less. The ratio of the width of the triangular facet structure 21 to the distance between the triangular facet structures 21 is the same as the ratio (W / w) of the width W of the opening 13 to the width w of the mask 12, preferably 5 or more and 50 or less. It is preferably 5 or more and 25 or less, and more preferably 10 or more and 25 or less.

The dislocation d included in the base substrate 10 is shielded by the corresponding portion of the mask 12, but is inherited by the triangular facet structure 21 of the GaN layer 20 at the corresponding portion of the opening 13.

Here, the crystal growth conditions of GaN are appropriately selected so as to be suitable for forming the triangular facet structure 21. Specifically, the flow rate of Ga source gas (HCl gas that produces GaCl) is, for example, 0.4 slm or more and 1.2 slm or less, the flow rate of N source gas is, for example, 4 slm or more and 24 slm or less, and the flow rate of carrier gas is. Typically, for example, 17.4 slm. The pressure in the reaction chamber is typically 980 kPa or more and 1000 kPa or less, and the crystal growth temperature is, for example, 1000 ° C. or more and 1100 ° C. or less.

<Thick film growth step>
After the triangular facet structure 21 forming step, GaN is continuously crystal-grown. At this time, as shown in FIG. 4A, the GaN has a first thickness so as to grow crystals from the diagonal facet planes of the respective slopes of the plurality of triangular facet structures 21 and embed the recesses between the triangular facet structures 21 adjacent to each other. At the same time as forming the film growth layer 22 (first thick film growth step), on each of the plurality of triangular facet structures 21, the bottom surface of the triangular facet structure 21 is continuously formed on the top thereof, and thus the substrate of the base substrate 10. Crystals grow on the same crystal growth surface as the substrate surface exposed from the opening 13 between the masks 12 in the main body 11, and the dimensions in the mask width direction gradually expand to both sides as the crystals grow, which is a history of the growth region. A second thick film growth layer is formed so that the cross-sectional shape along the mask width direction becomes an inverted triangle (second thick film growth step), and a single GaN layer 20 as a whole including the triangular facet structure 21 is formed. Consists of (semiconductor layer).

Further, by selecting the configuration of the base substrate 10 and the crystal growth conditions of GaN, as shown in FIG. 4B, GaN grows crystals from the diagonal facet planes of the respective slopes of the plurality of triangular facet structures 21 and mutually grows. A first thick film growth layer 22 is formed so as to embed a recess between adjacent triangular facet structures 21 (first thick film growth step), and then a plurality of triangular facets are formed along with the formation of the first thick film growth layer 22. Crystals grow on each of the structures 21 on the same crystal growth plane as the bottom surface of the triangular facet structure 21 at intervals from the top of the triangular facet structure 21, and the dimensions in the mask width direction are on both sides as the crystal grows. The second thick film growth layer is formed by gradually expanding so that the cross-sectional shape along the mask width direction, which is the history of the growth region, becomes an inverted triangle (second thick film growth step), and the triangular facet structure 21 is formed. A single GaN layer 20 (semiconductor layer) may be formed as a whole including the above.

Here, in the "inverted triangle" in the present application, in addition to the inverted triangle composed of the sides of three line segments, at least one of the three sides bulges outward or inward in a bow shape. Includes a nearly inverted triangle that is immersive in. When the triangular facet structure 21 is formed of c-plane grown GaN, the second thick film growth layer 23 is also formed of c-plane grown GaN.

Then, as the crystal growth of GaN in the first and second thick film growth layers 22 and 23 progresses, as shown in FIGS. 5A (corresponding to FIG. 4A) and 5B (corresponding to FIG. 4B), the first thick film growth layer The embedding of the recesses between the mutually adjacent triangular facet structures 21 by 22 is completed, and subsequently, the plurality of second thick film growth layers 23 on the plurality of triangular facet structures 21 are united to form the first thick film. The growth layer 22 is embedded, and finally constitutes a single GaN layer 20 (semiconductor layer) having a flat surface as a whole, including the triangular facet structure 21 and the first and second thick film growth layers 22 and 23.

The dislocation d contained in the triangular facet structure 21 propagates through the first thick film growth layer 22 in the facet of the triangular facet structure 21 due to bending in the propagation direction, and the association of the first thick film growth layers 22 adjacent to each other. Concentrate on the recesses of the part. However, dislocations d are dispersed on the surface after the first thick film growth layer 22 is embedded in the second thick film growth layer 23, and the surface thereof has a low dislocation density. The effect of dispersing and reducing the dislocations d is that the pair annihilation of the dislocations d caused by concentrating in the recesses of the meeting portions of the first thick film growth layer 22 adjacent to each other and finally the first thick film growth layer 22. By embedding in the second thick film growth layer 23, the propagation of the dislocation d of the first thick film growth layer 22 to the upper layer is restricted and the dislocation d of the second thick film growth layer 23 is dispersed. Is considered to be.

Here, points filled recesses between the triangular facet structures 21 from the surface of the height from the surface to the top of the triangular facet structures 21 L _W and the substrate main body 11 of the substrate main body 11, i.e., the second thick-film growth layer 23 When the height of the combined starting and L _M, the crystal growth rate of the second thick growth layer 23 is faster L _M is reduced, and the L _M crystal growth rate of the second thick growth layer 23 is slow growing. When the crystal growth rate of the second thick film growth layer 23 is slow, the concentration of dislocations d in the recesses of the meeting portions of the first thick film growth layers 22 adjacent to each other is promoted, so that a high dislocation reduction effect can be obtained. On the other hand, it becomes difficult for the embedded growth of the recesses between the first thick film growth layers 22 to proceed. From the viewpoint of promoting the burying growth of the recess between the first thick grown layer 22 to increase the dispersion and reduction of the dislocation d, the ratio of L _M for _{L W (L M / L W} ) is preferably 1 or more 3 It is .75 or less, more preferably 1.5 or more and 3.75 or less.

The GaN crystal growth conditions in the thick film growth step are appropriately set so as to be suitable for the formation of the first and second thick film growth layers 22 and 23. The crystal growth conditions of GaN may be the same as or different from the triangular facet structure formation step.

Then, a GaN substrate can be obtained by horizontally cracking and separating the GaN layer 20 thus produced. This GaN substrate can be suitably used as a material for power devices in power electronics for controlling high withstand voltage and large current of hybrid automobiles and electric trains, and other sufficient characteristics have not been obtained so far. It can also be suitably used as a material for a light emitting device such as green, and a material for a solar cell that requires high added value in special applications such as space.

According to the method for manufacturing a GaN substrate according to the above embodiment, each masks a plurality of large triangular facet structures 21 having a width of 100 μm or more in which GaN is crystal-grown so that the cross-sectional shape along the mask width direction becomes a triangle. It is formed so as to be arranged side by side in the width direction, and GaN grows from each oblique facet surface of those large triangular facet structures 21 to embed recesses between the adjacent triangular facet structures 21. As described above, the first thick film growth layer 22 is formed, and GaN grows on each of the large triangular facet structures 21 on the same crystal growth plane as the bottom surface of the triangular facet structure 21 in the mask width direction. The second thick film growth layer 23 is formed so that the cross-sectional shape along the above is an inverted triangle, and finally the embedding of the recesses between the mutually adjacent triangular facet structures 21 by the first thick film growth layer 22 is completed. Following the above, a plurality of second thick film growth layers 23 on the plurality of triangular facet structures 21 are united to embed the first thick film growth layer 22, thereby reducing the rearrangement d and obtaining a dispersion effect. As a result, it is possible to manufacture a large-area GaN substrate having a low dislocation density suitable as a material for a power device from the GaN layer 20 including the triangular facet structure 21 and the first and second thick film growth layers 22 and 23. can. Further, although the GaN substrate has a low dislocation density, the residual impurity concentration is low unlike that obtained by the liquid phase growth method, and the conductivity can be easily controlled from the high resistance substrate to the low resistance substrate by doping. Can be done.

[Experiment 1]
In Experiment 1, a SiO with a thickness of 200 nm was gradually widened in a range of 2 to 500 μm on a substrate body in which a GaN film having a thickness of about 3 μm was epitaxially grown on a sapphire substrate having a c-plane main surface by the MOVPE method. _{A base substrate for testing was prepared by providing the striped mask of No. 2 so} that the width of the opening was 10 μm and the mask width direction was the m-axis direction. Subsequently, GaN was crystal-grown on this substrate by the HVPE method. The crystal growth conditions were a ratio of N source gas flow rate to Ga source gas flow rate (V / III) of 10, normal pressure in the reaction chamber, crystal growth temperature of 1040 ° C., and crystal growth time of 15 minutes. Then, the formation / non-formation of the triangular facet structure was confirmed by observing the a-plane cross section of the obtained GaN layer with a fluorescence microscope.

From Experiment 1, when the width of the mask is wider than 100 μm, many GaN crystals with different crystal orientations are formed on the mask, and even if the period of sum of the width of the mask and the width of the opening becomes large, it corresponds to it. It was found that such a large triangular masked structure was not formed.

[Experiment 2]
In Experiment 2-1 on the same substrate body used in Experiment 1, the width was 10 μm and the thickness was 200.
A test base substrate was prepared by providing a striped mask of nm SiO _{2 so} that the width of the opening was 200 μm and the mask width direction was the m-axis direction. Subsequently, GaN was crystal-grown on this substrate by the HVPE method. As for the crystal growth conditions, the ratio of the N source gas flow rate to the Ga source gas flow rate (V / III) is 60, the pressure in the reaction chamber is normal pressure, and the crystal growth temperature is 1040.
The temperature and the crystal growth time were set to 540 minutes. Then, the formation / non-formation of the triangular facet structure was confirmed by observing the a-plane cross section of the obtained GaN layer with a fluorescence microscope. Also, Experiment 2-
In 2 and 2-3, the same operation as in Experiment 2-1 was performed with the widths of the openings set to 1000 μm and 2000 μm, respectively.

In Experiment 2-4, the width was 100 μm and the thickness was 20 on the same substrate body as that used in Experiment 1.
A test base substrate was prepared in which a mask of 0 nm SiO ₂ was provided in a stripe shape so that the width of the opening was 900 μm and the mask width direction was the m-axis direction. Subsequently, GaN was crystal-grown on this substrate by the HVPE method. As for the crystal growth conditions, the ratio of the N source gas flow rate to the Ga source gas flow rate (V / III) is 60, the pressure in the reaction chamber is normal pressure, and the crystal growth temperature is 104.
The temperature was 0 ° C. and the crystal growth time was 360 minutes. Then, the formation / non-formation of the triangular facet structure was confirmed by observing the a-plane cross section of the obtained GaN layer with a fluorescence microscope. In Experiment 2-5, the width of the mask was 50 μm and the width of the opening was 950 μm, and in Experiment 2-6, the width of the mask was 20 μm and the width of the opening was 980 μm, and the same operation as in Experiment 2-4 was performed. gone.

The experimental results are shown in Table 1.

From the results of Experiments 2-1 to 2-6 shown in Table 1, even if the width of the mask is small, a large triangular facet structure is not formed if the width of the opening is large, while the mask is formed even if the width of the opening is large. It can be seen that if the width of is adjusted to a large extent corresponding to it, a large triangular facet structure is formed.

[Experiment 3]
_{In Experiments 3-1 to 3-16, a striped SiO 2} or SiNx mask was placed on the same substrate body as that used in Experiment 1 or on the substrate body of the GaN substrate having a c-plane main surface. Various combinations of the width of the mask and the width of the opening were used to prepare a base substrate for testing provided so that the mask width direction was the m-axis direction. Subsequently, GaN was crystal-grown on this substrate by the HVPE method. As the crystal growth conditions, the ratio of the N source gas flow rate to the Ga source gas flow rate (V / III), the crystal growth temperature, and the crystal growth time were variously combined, except that the pressure in the reaction chamber was set to normal pressure. Then, the formation / non-formation of the triangular facet structure was confirmed by observing the a-plane cross section of the obtained GaN layer with a fluorescence microscope.

The experimental results are shown in Table 2.

From the results of Experiments 3-1 to 3-16 shown in Table 2, in Experiments 3-1 to 3-12 in which the ratio of the width of the opening to the width of the mask is in the range of 5 to 50, a stable and large triangular facet is set. It can be seen that the structure is formed. On the other hand, the width of the opening is larger than the width of the mask, and the ratios are 100 and 200. Experiments 3-13 to 3-15, and conversely, the width of the opening is smaller than the width of the mask. In Experiment 3-16 with a ratio of 0.042, it can be seen that no triangular facet structure is formed.

[Experiment 4]
In Experiment 4-1 on a substrate body similar to that used in Experiment 1, the width was 10 μm and the thickness was 200.
A test base substrate was prepared by providing a striped mask of nm SiO _{2 so} that the width of the opening was 200 μm and the mask width direction was the m-axis direction. Subsequently, GaN was crystal-grown on this substrate by the HVPE method. As for the crystal growth conditions, the ratio of the N source gas flow rate to the Ga source gas flow rate (V / III) is 60, the pressure in the reaction chamber is normal pressure, and the crystal growth temperature is 1040.
The temperature and the crystal growth time were set to 540 minutes. Then, the formation / non-formation of the triangular facet structure was confirmed by observing the a-plane cross section of the obtained GaN layer with a fluorescence microscope. In addition, the average film thickness and the average dislocation density are measured by averaging the measurement results of 5 or more reference points in the substrate, and the dislocation reduction only for the pair annihilation obtained by footing the theory of pair annihilation and the experimental results. The average dislocation density was subtracted from the calculated dislocation density obtained based on the model formula, and the dislocation reduction efficiency with respect to the calculated dislocation density was calculated.

In Experiment 4-2, the width was 20 μm and the thickness was 200 on the same substrate body as that used in Experiment 1.
A base substrate for testing was prepared by providing a striped mask of nm SiO _{2 so} that the width of the opening was 980 μm and the mask width direction was the m-axis direction. Subsequently, GaN was crystal-grown on this substrate by the HVPE method. The crystal growth conditions were the first half, the ratio of the N source gas flow rate to the Ga source gas flow rate (V / III) was 60, the pressure in the reaction chamber was normal pressure, and the crystal growth temperature was 1.
The temperature is 040 ° C. and the crystal growth time is 360 minutes. In the latter half, the ratio of the N source gas flow rate to the Ga source gas flow rate (V / III) is 10, the pressure in the reaction chamber is normal pressure, the crystal growth temperature is 1100 ° C, and the crystal. The growth time was set to 360 minutes. Then, the formation / non-formation of the triangular facet structure was confirmed by observing the a-plane cross section of the obtained GaN layer with a fluorescence microscope. Also, as in Experiment 4-1
The average growth film thickness and the average dislocation density were measured, and the calculated value of the dislocation density was obtained to calculate the dislocation reduction efficiency.

In Experiment 4-3, the width was 10 μm and the thickness was 200 on the main body of the GaN substrate whose main surface was c-plane.
A test base substrate was prepared by providing a striped mask of nm SiO _{2 so} that the width of the opening was 200 μm and the mask width direction was the m-axis direction. Subsequently, GaN was crystal-grown on this substrate by the HVPE method. As for the crystal growth conditions, the ratio of the N source gas flow rate to the Ga source gas flow rate (V / III) is 60, the pressure in the reaction chamber is normal pressure, and the crystal growth temperature is 1040.
The temperature and the crystal growth time were set to 360 minutes. Then, the a-plane cross section of the obtained GaN layer was observed with an electron microscope to obtain a cathode luminescence (CL) image, and the formation / non-formation of the triangular facet structure was confirmed. Further, as in Experiment 4-1 the average growth film thickness and the average dislocation density were measured, and the calculated value of the dislocation density was obtained to calculate the dislocation reduction efficiency.

The experimental results are shown in Tables 3 and 4. In addition, Table 4 shows fluorescence microscope observation photographs for Experiments 4-1 and 4-2, and cathode luminescence (CL) images for Experiment 4-3, respectively.

From the results of Experiments 4-1 to 4-3 shown in Tables 3 and 4, following the formation of a plurality of large triangular facet structures having a width of 200 μm or 980 μm so as to be arranged side by side in the mask width direction. From each of the diagonal facet planes of those large triangular facets, GaN crystal grows to form a first thick film growth layer that fills the recesses between the adjacent triangular facet structures and those large triangular facets. On each of the structures, a second thick film growth layer is formed so that GaN having a c-plane main surface crystal grows and the cross-sectional shape along the mask width direction becomes an inverted triangle, and finally the first thickness. After the embedding of the recesses between the adjacent triangular facet structures by the membrane growth layer is completed, the plurality of second thick film growth layers on the plurality of triangular facet structures are united to embed the first thick film growth layer. As a result, it can be seen that a GaN layer with a low dislocation density can be obtained.

Incidentally, when the height from the surface of the substrate main body to the point where the height to the top of the triangular facet structures buried recesses of the first thick growth interlayer from L _W and the surface of the substrate main body and L _M, experiment 4 1-
In 4-3, the ratio of _{L M} for _{L W (L M / L W} ) was 1.8 to 2.2.

The present invention is useful in the technical field of a substrate for manufacturing a semiconductor substrate.

10 Base substrate 11 Substrate body 12 Mask 13 Opening 20 GaN layer (semiconductor layer)
21 Triangular facet structure 22 1st thick film growth layer 23 2nd thick film growth layer

Claims (7)

Each step of forming a plurality of triangular facet structures having a width of 100 μm or more in the predetermined direction in which the semiconductor is crystal-grown so that the cross-sectional shape along the predetermined direction is triangular is arranged side by side in the predetermined direction. When,
A first thickness in which the semiconductor crystal grows and associates from each of the diagonal facet planes of the triangular facet structures so as to embed recesses between each of the plurality of triangular facet structures and adjacent triangular facet structures. The steps to form the membrane growth layer and
The semiconductor grows continuously on the top of each of the plurality of triangular facet structures on the same crystal growth plane as the bottom surface of the triangular facet structure so that the cross-sectional shape along the predetermined direction becomes an inverted triangle. And the step of forming the second thick film growth layer,
Equipped with
The first thick film growth layer is embedded by coalescing the plurality of the second thick film growth layers on the plurality of triangular facet structures.
In the step of forming the first thick film growth layer, dislocations are concentrated at the association portion of the first thick film growth layer, while in the step of forming the second thick film growth layer, the second thick film growth layer is formed. A method for manufacturing a semiconductor substrate in which dislocations are dispersed on the surface of the above. In the method for manufacturing a semiconductor substrate according to claim 1,
A method for manufacturing a semiconductor substrate in which the plurality of triangular facet structures are provided at intervals in the predetermined direction. In the method for manufacturing a semiconductor substrate according to claim 2,
A method for manufacturing a semiconductor substrate in which the distance between the triangular facet structures is 10 μm or more and 100 μm or less. In the method for manufacturing a semiconductor substrate according to claim 2 or 3.
A method for manufacturing a semiconductor substrate, wherein the ratio of the width of the triangular facet structure to the space between the triangular facet structures in the predetermined direction is 5 or more and 50 or less. In the method for manufacturing a semiconductor substrate according to any one of claims 1 to 4.
A method for manufacturing a semiconductor substrate in which the semiconductor is GaN. In the method for manufacturing a semiconductor substrate according to any one of claims 1 to 5.
A portion having a substrate body and a mask provided on the substrate body, in which the mask and openings exposed to the substrate body are alternately arranged in a predetermined direction in a plane on the substrate body. Using a base substrate containing
A method for manufacturing a semiconductor substrate, in which the triangular facet structure is formed on the mask so that the substrate main body exposed from the opening in the base substrate is the bottom surface without causing crystal growth of the semiconductor. In the method for manufacturing a semiconductor substrate according to any one of claims 1 to 6.
A method for manufacturing a semiconductor substrate, wherein the ratio of the height to the top of the triangular facet structure to the height to the union start point of the second thick film growth layer is 1 or more and 3.75 or less.

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