JP6977348B2 - Sputtering target and how to manufacture the sputtering target - Google Patents

Description

The present invention relates to a sputtering target for forming a ceramic film containing SiAlON by sputtering, and a method for manufacturing the sputtering target.

A ceramic material composed of Si (silicon), Al (aluminum), O (oxygen), and N (nitrogen) is commonly known as Sialon. Sialon is generally a material having high hardness, excellent wear resistance, and excellent heat resistance and corrosion resistance. Therefore, the Sialon film is widely used as a protective film for a thermal print head of a thermal printer.

A sputtering method is known as a method for forming a sialon film. Patent Document 1, as an electrically conductive Sialon sputtering target which enables DC sputtering, Y ₂ and O ₃ of 0.2 to 10 wt%, a carbide of Ti, 1 or 2 or of nitrides and carbonitrides A target containing 10 to 40% by weight of the above and the balance of which is sialon and unavoidable impurities is disclosed.

Japanese Unexamined Patent Publication No. 10-291863

With the increase in speed of thermal printers in recent years, there is a demand for further improvement in wear resistance of the protective film of the thermal print head. That is, there is a demand for a ceramic film having a higher film hardness and excellent wear resistance than a ceramic film (sialon film) formed by using a conventional conductive Sialon sputtering target.

The present invention has been made in view of the above-mentioned circumstances , and provides a sputtering target capable of forming a ceramic film having a high film hardness by direct current (DC) sputtering, and a method for manufacturing the sputtering target. The purpose.

The sputtering targets of the present invention are Ti: 8.5% by mass or more and 35% by mass or less, Y: 0.10% by mass or more and 6.0% by mass or less, Si, Al, N (nitrogen) and O (oxygen). to include a C (carbon), a sputtering target, a C, seen including within the scope of 0.20 wt% to 2.0 wt% or less, the specific resistance value is less than 0.1 [Omega · cm It is characterized by that.

According to the sputtering target of the present invention, since Ti is contained in an amount of 8.5% by mass or more and 35% by mass or less, a ceramic film can be formed by direct current sputtering in the same manner as the conventional conductive Sialon sputtering target. .. Further, since C is contained in the range of 0.20% by mass or more and 2.0% by mass or less, the ceramic film formed by DC sputtering usually contains C in an amount of 0.15% by mass or more and 1.8% by mass or less. Since it is contained within the following range, the film hardness becomes high.

Here, in the sputtering target of the present invention, Si: 17% by mass or more and 45% by mass or less, and Al: 1% by mass or more and 17% by mass or less are preferable.
In this case, since Si is contained in the range of 17% by mass or more and 45% by mass or less and Al is contained in the range of 1% by mass or more and 17% by mass or less, the ceramic film formed by this sputtering target has high hardness and wear resistance. It can be used as a film containing a sialon composition having excellent heat resistance and corrosion resistance.

Method for producing the sputtering target of the present invention, a TiN _powder, a Y 2 _{O 3} powder, and carbon powder, and _Si 3 _{N 4} powder, and _Al 2 _{O 3} powder, were mixed with AlN powder, a TiN powder in the range of 10 mass% or more and 45 mass% or _less, Y 2 _{O 3} powder in the range of 8% by mass or less than 0.1 wt%, the carbon powder in the range of not less than 3.7 mass% to 0.3 mass% It is characterized by comprising a step of preparing a raw material powder mixture contained in the above, and a step of heating and sintering the raw material powder mixture.

According to the method for producing a sputtering target of the present invention, a sialon phase is formed by sintering _{Si 3} N ₄ powder, Al ₂ O _{3 powder and Al N powder in the sintering step.} In this sintering process, by Y ₂ O ₃ powder acts as a sintering agent to produce the dense sialon phase. Further, since the TiN powder forms a conductive TiN phase between the generated sialon phases, it is possible to obtain a sintered body (sputtering target) having a degree of conductivity capable of forming a film by direct current sputtering. .. Further, since the obtained sputtering target usually contains C made from carbon powder in the range of 0.2% by mass or more and 2.0% by mass or less, a ceramic film having a high film hardness can be formed. It will be possible.

According to the present invention, it is possible to provide a sputtering target capable of forming a ceramic film having a high film hardness by direct current (DC) sputtering, and a method for manufacturing the sputtering target.

It is a figure which shows the elemental distribution of the ceramic film which concerns on one Embodiment of this invention. It is a figure which shows the element distribution of the target surface of the sputtering target which concerns on one Embodiment of this invention. It is a flow figure which shows the manufacturing method of the sputtering target which concerns on one Embodiment of this invention.

Hereinafter, a ceramic film, a sputtering target, and a method for manufacturing the sputtering target according to the embodiment of the present invention will be described with reference to the attached drawings.
The ceramic film of the present embodiment is used, for example, as a protective film for a thermal print head of a thermal printer. The ceramic film of the present embodiment is preferably a sputtering film formed by sputtering. Further, the sputtering target of the present embodiment is used when the above ceramic film is formed into a film by direct current sputtering.

<Ceramics film>
The ceramic film of the present embodiment contains Ti: 8.5% by mass or more and 36% by mass or less, Y: 0.10% by mass or more and 8.0% by mass or less, and a sialon composition, and further C is 0. Included within the range of .15% by mass or more and 1.8% by mass or less. The Ti content is preferably in the range of 9.0% by mass or more and 35.9% by mass or less. The Y content is preferably in the range of 0.12% by mass or more and 6.6% by mass or less. The remaining composition excluding Ti, Y and C contained in the ceramic film is preferably a sialon composition (Si, Al, O, N) and unavoidable impurities. The content of Si in the ceramic film is preferably in the range of 17% by mass or more and 45% by mass or less. Further, the Al content in the ceramic film is preferably in the range of 1% by mass or more and 17% by mass or less.

FIG. 1 is a diagram showing the distribution of elements (Si, Al, O, N, Ti, Y, C) of the ceramic film of the present embodiment. The element distribution is measured by EPMA.
As shown in FIG. 1, in the ceramic film of the present embodiment, each element of Si, Al, O, N, Ti, Y, and C is dispersed almost uniformly.

<Sputtering target>
The sputtering target of the present embodiment contains Ti, Y, a sialon composition, and C, similarly to the ceramic film described above. However, the Ti content is in the range of 8.5% by mass or more and 35% by mass or less, the Y content is in the range of 0.1% by mass or more and 6.0% by mass or less, and the C content is 0. It is in the range of 2% by mass or more and 2.0% by mass or less.

FIG. 2 is a diagram showing the distribution of elements (Si, Al, O, N, Ti, Y, C) on the target surface of the sputtering target of the present embodiment. The element distribution is measured by EPMA.
As shown in FIG. 2, the sputtering target of the present embodiment has a structure composed of a sialon phase containing Si, Al, O, and N and a TiN phase containing Ti and N. Y is mainly dispersed in the sialon phase. C is mainly dispersed in the TiN phase.

The sialon phase is preferably a phase formed by sintering _{Si 3} N ₄ powder, Al ₂ O _{3 powder and Al N powder.}
The composition of the sialon phase _{is preferably represented by a composition formula of Si 6-Z} Al _{ZO Z} N _8-Z (where Z is a number satisfying 0 <Z ≦ 4.2). However, the crystal structure of the sialon phase is not particularly limited, and may be an α-sialon phase or a β-sialon phase. Further, the sialon phase may be amorphous.

The composition formula is a general composition formula expressing the sialon composition with Z as a variable, but in reality, there are problems such as weighing error and variation in analysis accuracy, so that each Z is used with respect to the composition formula. Some errors are allowed in the value. Specifically, when Z for determining the number of Si in the composition formula is Zs, Z for determining the number of Al is Za, Z for determining the number of O is Zo, and Z for determining the number of N is Zn, the composition formula. Is written as _{Si 6-Zs} Al _Za O _Zo N _8-Zn. Variations are acceptable. Further, Z ≧ 0.1 is appropriate as the lower limit of Z actually used, and considering this, the specific composition range of Sialon is Si: 17% by mass or more and 59% by mass or less, Al: 0. It can be expressed as 9% by mass or more and 40% by mass or less, O: 0.5% by mass or more and 24% by mass or less, and N: 18% by mass or more and 39.5% by mass or less. More preferably, Z: 0.2 or more and 3.0 or less, and specific composition ranges include Si: 25% by mass or more and 58% by mass or less, Al: 1.9% by mass or more and 34% by mass or less, O: 1% by mass or more and 20% by mass or less, N: 23% by mass or more and 39% by mass or less. More preferably, Z: 0.3 or more and 2.0 or less, and specific composition ranges include Si: 40% by mass or more and 57% by mass or less, Al: 2.8% by mass or more and 20% by mass or less, O: It is 1.7% by mass or more and 12% by mass or less, and N: 30% by mass or more and 38.5% by mass or less.

Incidentally, the sputtering target of the present embodiment, as described below, containing TiN and a Y ₂ O ₃ C other than sialon composition. Therefore, the content of Si and Al in the sputtering target is smaller than that in the case of Sialon alone. The content of Si in the sputtering target is preferably in the range of 17% by mass or more and 45% by mass or less, more preferably in the range of 20% by mass or more and 40% by mass or less, and further preferably 25% by mass or more and 35% by mass or less. Is within the range of. The content of Al in the sputtering target is preferably in the range of 1% by mass or more and 17% by mass or less, more preferably in the range of 2% by mass or more and 10% by mass or less, and further preferably 3% by mass or more and 6% by mass. It is within the range of% or less.

Since TiN has conductivity, the TiN phase has the effect of imparting conductivity to the sputtering target to the extent that a film can be formed by direct current sputtering.
If the content of Ti (that is, the TiN phase) of the sputtering target is too small, the conductivity may decrease and it may be difficult to form a film by DC sputtering. On the other hand, if the Ti content is too high, the content of the sialon phase is relatively low, the purity of the formed ceramic film is lowered, and the film hardness may be lowered. Therefore, in the present embodiment, the Ti content of the sputtering target is set within the range of 8.5% by mass or more and 35% by mass or less. The Ti content of the sputtering target is preferably in the range of 15% by mass or more and 30% by mass or less, and more preferably in the range of 20% by mass or more and 30% by mass or less.

It is preferable that Y _{exists as Y 2} O _3. Y ₂ O ₃ acts as a sintering aid when the Si ₃ N ₄ powder, the Al ₂ O ₃ powder and the Al N powder are sintered to form a sialon phase. Therefore, Y is mainly dispersed in the sialon phase.
If the Y (ie, Y ₂ O ₃ ) content of the sputtering target is too low, it may be difficult to form the sialon phase. On the other hand, if the Y content is too high, the purity of the sialon phase may be lowered, the purity of the formed ceramic film may be lowered, and the film hardness may be lowered. Therefore, in the present embodiment, the Y content of the sputtering target is set within the range of 0.10% by mass or more and 6.0% by mass or less. The Y content of the sputtering target is preferably in the range of 1.0% by mass or more and 4.0% by mass or less, and more preferably in the range of 1.5% by mass or more and 3.0% by mass or less.

C has the effect of increasing the film hardness of the formed ceramic film.
The C content of the sputtering target is in the range of 0.20% by mass or more and 2.0% by mass or less. If the content of C is too small, it becomes difficult to obtain the above-mentioned action and effect by C. On the other hand, if the C content is too high, the film hardness of the formed ceramic film may decrease.

The sputtering target of the present embodiment preferably has a specific resistance of 0.1 Ω · cm or less. When the specific resistance is 0.1 Ω · cm or less, a ceramic film can be stably formed by DC sputtering.

<Manufacturing method of sputtering target>
Next, the method for manufacturing the sputtering target of the present embodiment will be described with reference to the flow chart of FIG.
Method for producing the sputtering target of the present embodiment, TiN _powder, Y 2 _{O 3} powder, carbon powder, _Si 3 _{N 4} powder, _Al 2 _{O 3} powder, mixing process by mixing AlN powder to prepare a raw material powder mixture S01 The molding step S02 of molding the obtained raw material powder mixture into a predetermined shape to obtain a molded body, the sintering step S03 of firing the obtained molded body to obtain a sintered body, and the obtained sintering. It is provided with a processing step S04 for processing the body.

(Mixing step S01)
In the mixing step S01, TiN _powder, Y 2 _{O 3} powder, carbon powder, _Si 3 _{N 4} powder, _Al 2 _{O 3} powder, and with weighing an AlN powder to make a predetermined composition ratio, these raw material powders Mix to prepare a raw material powder mixture. The content of the TiN powder in the raw material powder mixture is preferably in the range of 10% by mass or more and 45% by mass or less, and particularly preferably 20% by mass or more and 40% by mass or less. The content of Y ₂ O ₃ powder is preferably in the range of 8 mass% 0.1 mass% or more. The content of the carbon powder is in the range of 0.3% by mass or more and 3.7% by mass or less. Graphite powder can be used as the carbon powder.

The blending ratio of Si ₃ N ₄ powder, Al ₂ O ₃ powder and Al N powder is the ratio of producing sialon. The ratio of producing sialon is, for example, 88: 7: 5 (= Si ₃ N ₄ powder: Al ₂ O ₃ powder: Al N powder) in terms of mass ratio.

The mixing of the raw material powder is not particularly limited, but it is preferably performed using a mixing device having a crushing function such as a ball mill. Further, the raw material powder may be mixed by a wet method or a dry method.

(Molding step S02)
Next, in the molding step S02, the prepared raw material powder mixture is molded into a predetermined shape to obtain a molded product. As a molding method of the molded body, a press molding method can be used.

(Sintering step S03)
Next, in the sintering step S03, the obtained molded product is fired at normal pressure to sinter the raw material powder mixture to obtain a sintered body. There is no particular limitation on the atmosphere of the molded product when it is fired. The molded product may be fired in the atmosphere or in an inert gas atmosphere. The firing temperature is usually in the range of 1600 ° C. or higher and 1800 ° C. or lower.

(Processing process S04)
In the processing step S04, the obtained sintered body is cut or ground to be processed into a sputtering target having a predetermined shape. In this way, it is possible to manufacture a sputtering target (conductive sialon sputtering target) having a degree of conductivity capable of forming a ceramic film (sialon film) by direct current sputtering.

According to the ceramic film of the present embodiment having the above-described configuration, since C is contained in the range of 0.15% by mass or more and 1.8% by mass or less, the film hardness becomes high.

Further, since the sputtering target of the present embodiment contains Ti, a ceramic film can be formed by direct current sputtering as in the case of the conventional sputtering target. Further, since C is contained in the range of 0.2% by mass or more and 2.0% by mass or less, the ceramic film formed by DC sputtering usually contains C in an amount of 0.15% by mass or more and 1.8% by mass or less. Since it is contained within the following range, the film hardness becomes high.

According to the method for manufacturing a sputtering target of the present embodiment, a sialon phase is generated by sintering _{Si 3} N ₄ powder, Al ₂ O _{3 powder, and Al N powder in the sintering step.} In this sintering process, by Y ₂ O ₃ powder acts as a sintering agent to produce the dense sialon phase. Further, since the TiN powder forms a conductive TiN phase between the generated sialon phases, it is possible to obtain a sputtering target having a degree of conductivity capable of forming a film by direct current sputtering. Further, since the obtained sputtering target usually contains C made from carbon powder in the range of 0.2% by mass or more and 2.0% by mass or less, a ceramic film having a high film hardness can be formed. It will be possible.

Although the embodiments of the present invention have been described above, the present invention is not limited to this, and can be appropriately changed without departing from the technical idea of the invention.
For example, the sputtering target may contain unavoidable impurities. Here, the unavoidable impurities mean impurities unavoidably contained in the raw material powder and impurities unavoidably mixed in the manufacturing process.

Further, in the present embodiment, as a material powder, was used _Si 3 _{N 4} powder _Al 2 _{O 3} powder and AlN powder may be used sialon powder in place of these raw material powders. Further, first, Si ₃ N ₄ powder, Al ₂ O ₃ powder, Al N powder and Y ₂ O ₃ powder are mixed, and the obtained mixed powder is fired _{to prepare Y 2} O ₃ containing sialon powder, and then. the raw material powder mixture may be prepared by mixing the Y ₂ O ₃ containing sialon powder and a TiN powder and carbon powder. Further, as the carbon powder, an organic powder that produces carbon by firing in the sintering step may be used.

Furthermore, in the present embodiment, the raw material powder mixture is formed into a molded product in the molding process and then fired at normal pressure in the sintering process to obtain a sintered body, which is obtained by hot pressing or HIP (hot or the like). A sintered body may be obtained by pressure sintering such as (side pressure pressurization).

The results of the confirmation experiment conducted to confirm the effect of the present invention will be described below. The values marked with * in Tables 1 and 2 below are values outside the scope of the present invention.

<Making a sputtering target>
As the raw material powder, TiN powder (purity: 3N, average particle size: _0.8μm), Y 2 _{O 3} powder (purity: 3N, average particle size: 0.6 .mu.m), carbon powder (graphite powder, purity: 4N, average Particle size: 1 μm), Si ₃ N ₄ powder (purity 3 N, average particle size: 0.6 μm), Al ₂ O ₃ powder (purity: 4 N, average particle size: 0.4 μm), Al N powder (purity: 4 N, Average particle size: 1.2 μm) was prepared.
TiN powder _were weighed Y 2 _{O 3} powder, carbon powder, _Si 3 _{N 4} powder, the _Al 2 _{O 3} powder and AlN powder so that the compounding ratio shown in Table 1 below. The "blending ratio of the prepared sialon raw material" in Table 1 is the blending ratio of each powder calculated with the total amount of _{Si 3} N ₄ powder, Al ₂ O _{3 powder and Al N powder producing sialon as 100% by mass.} "raw material powder blending ratio" is the powder calculated TiN _powder, Y 2 _{O 3} powder, carbon (C) powder, _Si 3 _{N 4} powder, the total amount of _Al 2 _{O 3} powder and AlN powder as 100 wt% It is a compounding ratio of.
In Examples 1 to 7 and Comparative Examples 1 to 6 of the present invention, _{the compounding ratio of the Si 3} N ₄ powder, the Al ₂ O ₃ powder and the Al N powder is 8: 1: 1 (= Si ₃ N _{4:) in terms of molar ratio.} Al ₂ O ₃ : Al N), and the composition formula of the sialon produced is Si _{5.33 Al 0.67} O _{0.67 N 7.33} (Z = 0.67). In Examples 8 of the present invention and Comparative Examples 7 to 8, _{the compounding ratio of the Si 3} N ₄ powder, the Al ₂ O ₃ powder and the Al N powder is a molar ratio of 1: 1: 1 (= Si ₃ N ₄ : Al ₂ O _3). : AlN), and the composition formula of the generated sialon is Si _3.0 Al _3.0 O _3.0 N _5.0 (Z = 3.0). In Examples 9 of the present invention and Comparative Examples 9 to 10, _{the compounding ratio of Si 3} N ₄ powder, Al ₂ O ₃ powder and Al N powder is 29: 1: 1 (= Si ₃ N ₄ : Al ₂ O _{3) in molar ratio.} : AlN), and the composition formula of the generated sialon is Si _5.8 Al _0.2 O _0.2 N _7.8 (Z = 0.2).

Each weighed raw material powder was mixed in a wet ball mill and then dried at a temperature of 150 ° C. for 24 hours to prepare a raw material powder mixture.

The prepared raw material powder mixture was pressed at a pressure of ^{1400 kgf / cm 2 to form a disk.} The obtained disc-shaped molded product was fired in the air at a temperature of 1690 ° C. for 5 hours to obtain a sintered body. The obtained sintered body was machined to prepare a disk-shaped sputtering target having a diameter of 125 mm and a thickness of 5 mm. Two sputtering targets were prepared, one for analysis and the other for film formation.

<Evaluation of sputtering target>
Using a sputtering target for analysis, the resistivity and the contents of Si, Al, O, N, Ti, Y, and C were measured by the following method, and the structure of the target surface was observed.

(Measurement of resistivity)
It was measured by the four-probe method. The measuring device used was Loresta-GP manufactured by Mitsubishi Chemical Analytech. The measurement results are shown in Table 1.

(Measurement of Si, Al, Ti, Y content)
The sputtering target was pulverized to prepare a powder for composition analysis. The powder for composition analysis was dissolved in an acid, and the obtained acid solution was subjected to ICP analysis to measure the contents of Si, Al, Ti, and Y. The measurement results are shown in Table 1.

(Contents of O, N, C)
The powder for composition analysis was heated, the generated gas was analyzed, and the contents of O, N, and C were measured. For O and N, the mass% ratio of N / O was determined. The measurement results are shown in Table 1.

(Observation of the structure of the target surface)
Elemental mapping of the target surface was performed using EPMA. As a result, the sputtering targets produced in Examples 1 to 9 of the present invention all had a structure having a sialon phase and a TiN phase, as shown in FIG. Y was mainly dispersed in the Sialon phase, and C was mainly dispersed in the TiN phase.

<Ceramic film formation>
A sputtering target for film formation was soldered to a backing plate made of oxygen-free copper, which was mounted on a sputtering device, and DC sputtering was performed under the following conditions to form a ceramic film.

(Spatter conditions)
Input power: Pulse-DC 400W
Gas flow rate: Ar: 29.4 cc / min, N ₂ : 0.6 cc / min
Total pressure: 0.6Pa
Substrate heating: 300 ° C
Substrate material: Glass ceramic film thickness: 3 μm

<Evaluation of ceramic film>
With respect to the obtained ceramic film, the film hardness and the contents of Si, Al, O, N, Ti, Y and C were measured by the following methods, and the structure of the film surface was observed.

(Measurement of film hardness)
The film hardness of the ceramic film was measured by a nanoindenter. The results are shown in Table 2.

(Measurement of Si, Al, Ti, Y content)
The ceramic film was peeled off from the glass substrate. The peeled ceramic film was dissolved in acid, and the obtained acid solution was subjected to ICP analysis to measure the contents of Si, Al, Ti, and Y. The measurement results are shown in Table 2.

(Measurement of O, N, C content)
The peeled ceramic film was heated, the generated gas was analyzed, and the contents of O, N, and C were measured. For O and N, the mass% ratio of N / O was determined. The measurement results are shown in Table 2.

(Observation of membrane surface structure)
Elemental mapping of the film surface was performed using EPMA. As a result, as shown in FIG. 1, in each of the ceramic films produced in Examples 1 to 9 of the present invention, each element of Si, Al, O, N, Ti, Y, and C was dispersed almost uniformly. ..

The ceramic film formed by using the sputtering target of Comparative Example 1 having a Ti content higher than the range of the present invention had a Ti content higher than the range of the present invention and a lower film hardness. It is considered that the reason why the film hardness was low was that the Ti content of the sputtering target was too high, the content of the sialon phase was relatively low, and the purity of the formed ceramic film was lowered. .. On the other hand, the sputtering target of Comparative Example 2 having a Ti content lower than the range of the present invention could not form a ceramic film by DC sputtering. It is considered that this is because, as is clear from the specific resistivity shown in Table 1, the Ti content of the sputtering target is too low and the conductivity is lowered.

The ceramic film formed by using the sputtering target of Comparative Example 3 having a Y content higher than the range of the present invention had a Y content exceeding the range of the present invention and a low film hardness. It is considered that the reason why the film hardness was low was that the Y content of the sputtering target was too high, the purity of the sialon phase was low, and the purity of the formed ceramic film was low. On the other hand, in the ceramic film formed by using the sputtering target of Comparative Example 4 in which the Y content is lower than the range of the present invention, the Y content is lower than the range of the present invention and the film hardness is low. .. The reason why the film hardness is low is that the Y content of the sputtering target is too low, the raw material powder is difficult to sinter, and the sialon phase is difficult to be formed. It is thought that this is because it became difficult.

The ceramic film formed by using the sputtering targets of Comparative Examples 5, 7 and 9 having a C content higher than the range of the present invention has a higher C content than the range of the present invention and a lower film hardness. rice field. On the other hand, the ceramic film formed by using the sputtering targets of Comparative Examples 6, 8 and 10 having a C content lower than the range of the present invention has a C content lower than the range of the present invention and has a film hardness. Has become low.

On the other hand, it was confirmed that the ceramic film formed by using the sputtering targets of Examples 1 to 9 of the present invention having Ti, Y, and C contents within the range of the present invention has a high film hardness.

From the results of the above confirmation experiments, according to the present invention, it is possible to provide a ceramic film having a high film hardness, a sputtering target capable of forming the ceramic film having a high film hardness by DC sputtering, and a method for manufacturing the sputtering target. It was confirmed that.

Claims (4)

Ti: 8.5% by mass or more and 35% by mass or less, Y: 0.10% by mass or more and 6.0% by mass or less, and Si, Al, N (nitrogen), O (oxygen), and C (carbon). Including, sputtering targets,
A sputtering target containing C in the range of 0.20% by mass or more and 2.0% by mass or less, and having a specific resistance value of 0.1Ω · cm or less. The sputtering target according to claim 1 , wherein Si: 17% by mass or more and 45% by mass or less, and Al: 1% by mass or more and 17% by mass or less. The sputtering target according to claim 1 or 2 , which has a sialon phase containing Si, Al, O, and N and a TiN phase containing Ti and N, wherein C is dispersed in the TiN phase. And TiN _powder, Y 2 _{O 3} powder, and carbon powder, and _Si 3 _{N 4} powder was mixed with _Al 2 _{O 3} powder and AlN powder in the range of TiN powder following 45 wt% to 10 wt% among _them, preparing a raw material powder mixture containing at Y 2 _{O 3} powder in the range of 8% by mass or less than 0.1 wt%, the carbon powder in the range of not less than 3.7 mass% to 0.3 mass% When,
The step of heating and sintering the raw material powder mixture and
A method of manufacturing a sputtering target, which comprises.

Images