JP6976228B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6976228B2
JP6976228B2 JP2018137722A JP2018137722A JP6976228B2 JP 6976228 B2 JP6976228 B2 JP 6976228B2 JP 2018137722 A JP2018137722 A JP 2018137722A JP 2018137722 A JP2018137722 A JP 2018137722A JP 6976228 B2 JP6976228 B2 JP 6976228B2
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period
pulse
output
high frequency
plasma
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JP2020017565A (ja
JP2020017565A5 (https=
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守 薬師寺
康雄 大越
謙一 桑原
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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  • Drying Of Semiconductors (AREA)
JP2018137722A 2018-07-23 2018-07-23 プラズマ処理装置 Active JP6976228B2 (ja)

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JP2018137722A JP6976228B2 (ja) 2018-07-23 2018-07-23 プラズマ処理装置

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JP2020017565A5 JP2020017565A5 (https=) 2020-08-06
JP6976228B2 true JP6976228B2 (ja) 2021-12-08

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7508788B2 (ja) * 2020-02-05 2024-07-02 株式会社三洋物産 遊技機
JP7508790B2 (ja) * 2020-02-05 2024-07-02 株式会社三洋物産 遊技機
JP7508793B2 (ja) * 2020-02-05 2024-07-02 株式会社三洋物産 遊技機
JP7508794B2 (ja) * 2020-02-05 2024-07-02 株式会社三洋物産 遊技機
JP7508791B2 (ja) * 2020-02-05 2024-07-02 株式会社三洋物産 遊技機
JP7508789B2 (ja) * 2020-02-05 2024-07-02 株式会社三洋物産 遊技機
JP7508795B2 (ja) * 2020-02-06 2024-07-02 株式会社三洋物産 遊技機
JP7201805B2 (ja) 2020-08-27 2023-01-10 株式会社日立ハイテク プラズマ処理装置
US20230215694A1 (en) * 2021-02-05 2023-07-06 Lam Research Corporation Duty cycle control to achieve uniformity
JP7739425B2 (ja) * 2021-06-08 2025-09-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2023238235A1 (ja) * 2022-06-07 2023-12-14 株式会社日立ハイテク プラズマ処理装置
WO2024241390A1 (en) * 2023-05-19 2024-11-28 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999011103A1 (fr) * 1997-08-22 1999-03-04 Tokyo Electron Limited Procede de commande d'une unite de traitement a plasma
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
JP6086631B2 (ja) * 2013-10-17 2017-03-01 株式会社日立国際電気 プラズマ生成用電源装置およびその制御方法

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