JP6972386B2 - Adsorption device and vacuum processing device - Google Patents
Adsorption device and vacuum processing device Download PDFInfo
- Publication number
- JP6972386B2 JP6972386B2 JP2020560499A JP2020560499A JP6972386B2 JP 6972386 B2 JP6972386 B2 JP 6972386B2 JP 2020560499 A JP2020560499 A JP 2020560499A JP 2020560499 A JP2020560499 A JP 2020560499A JP 6972386 B2 JP6972386 B2 JP 6972386B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- guide hole
- suction device
- elevating member
- guide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Description
本発明は、真空中で基板を吸着保持する吸着装置に関し、特に、冷却用ガスを用いて基板の冷却を行う吸着装置の技術に関する。 The present invention relates to an adsorption device that adsorbs and holds a substrate in a vacuum, and more particularly to a technique of an adsorption device that cools a substrate by using a cooling gas.
従来より、スパッタリング装置などでは基板の温度制御を精密に行うために吸着装置が広く用いられている。真空中でガラス等の絶縁性基板上に成膜等の処理を行う装置においては、グラディエント力によって絶縁性基板を吸着保持する吸着装置が広く用いられている。 Conventionally, an adsorption device has been widely used in a sputtering device or the like in order to precisely control the temperature of a substrate. In an apparatus that performs a process such as forming a film on an insulating substrate such as glass in a vacuum, an adsorption device that adsorbs and holds the insulating substrate by a gradient force is widely used.
近年、この種の技術分野では、吸着する基板の大きさが大きくなってきたことに対応するため、吸着装置と基板との間に冷却用空間を設け、この冷却用空間にガスを導入して基板を冷却してその温度制御を行うことが提案されている。 In recent years, in this kind of technical field, in order to cope with the increase in the size of the substrate to be adsorbed, a cooling space is provided between the adsorption device and the substrate, and gas is introduced into this cooling space. It has been proposed to cool the substrate and control its temperature.
例えば図3に示すように、ステージ104上に設けられた従来の吸着装置105では、図示しない孔部を介して冷却用ガスを本体部150の冷却用空間151内に導入することによって基板110の下面を冷却するようにしている。
For example, as shown in FIG. 3, in the
そして、冷却用空間151と連通する貫通ガイド孔152内に、基板110を昇降させる昇降部材115が設けられている。
An
この従来技術では、冷却用ガスを冷却用空間151内に導入した後、昇降部材115の駆動部115aより外径を大きく形成した基板支持部115bの下面を貫通ガイド孔152の収容部154の底面155に押し付けた状態で、基板110の冷却を行う。
In this conventional technique, after the cooling gas is introduced into the
しかし、従来技術においては、昇降部材115の基板支持部115bの下面と収容部154の底面155との間にわずかな隙間ができ、この隙間から冷却用ガスがガイド部153側に漏れることにより、冷却効率を向上させることが困難であるという課題がある。
However, in the prior art, a slight gap is formed between the lower surface of the substrate support portion 115b of the
本発明は、上記従来技術の課題を解決するためになされたもので、その目的とするところは、冷却用ガスを用いて基板の冷却を行う吸着装置において、冷却用ガスの漏れを防止することによって基板の冷却効率を向上させる技術を提供することにある。 The present invention has been made to solve the above-mentioned problems of the prior art, and an object of the present invention is to prevent leakage of cooling gas in an adsorption device for cooling a substrate using cooling gas. The purpose is to provide a technique for improving the cooling efficiency of the substrate.
上記課題を解決するためになされた本発明は、誘電体中に基板を吸着保持するための吸着電極を有し、吸着側の部分に前記基板をガスを用いて冷却する冷却用空間が設けられた本体部と、前記本体部の冷却用空間に連通し且つ当該本体部を貫通する貫通ガイド孔を介して前記基板を支持して昇降させる昇降部材とを有し、前記昇降部材は、前記基板を支持する基板支持部と、当該基板支持部に連結され駆動機構によって駆動される連結部とを有するとともに、前記基板を支持しない状態において、前記基板支持部が、前記貫通ガイド孔の前記冷却用空間に連通する収容部内に配置されるとともに、前記連結部が、前記貫通ガイド孔の収容部に連通するガイド部内に配置されるように構成され、前記昇降部材の前記連結部と前記基板支持部との間に、前記貫通ガイド孔の収容部に設けた支持壁部と密着して支持することで前記貫通ガイド孔のガイド部を前記収容部に対して密閉するシール部材が設けられている吸着装置である。
本発明は、前記昇降部材は、その自重によって前記シール部材が前記貫通ガイド孔の収容部の支持壁部と密着するように構成されている吸着装置である。
本発明は、前記シール部材がOリングである吸着装置である。
本発明は、真空槽と、前記真空槽内に設けられた上記いずれかの吸着装置とを備え、前記吸着装置によって吸着保持された基板に対して所定の処理を行うように構成されている真空処理装置である。The present invention made to solve the above problems has an adsorption electrode for adsorbing and holding a substrate in a dielectric, and a cooling space for cooling the substrate with a gas is provided in a portion on the adsorption side. It has a main body portion and an elevating member that supports and elevates the substrate through a through guide hole that communicates with the cooling space of the main body portion and penetrates the main body portion, and the elevating member is the substrate. The substrate support portion is connected to the substrate support portion and is driven by a drive mechanism, and the substrate support portion is used for cooling the through guide hole in a state where the substrate is not supported. The connecting portion is arranged in the accommodating portion communicating with the space, and the connecting portion is arranged in the guide portion communicating with the accommodating portion of the through guide hole, and the connecting portion of the elevating member and the substrate support portion are arranged. A sealing member is provided between the two and the support wall portion provided in the accommodating portion of the through guide hole to seal the guide portion of the through guide hole to the accommodating portion. It is a device.
The present invention is a suction device in which the elevating member is configured such that the sealing member is brought into close contact with the support wall portion of the accommodating portion of the through guide hole by its own weight.
The present invention is a suction device in which the sealing member is an O-ring.
The present invention includes a vacuum chamber and any of the above-mentioned suction devices provided in the vacuum tank, and is configured to perform a predetermined process on a substrate sucked and held by the suction device. It is a processing device.
本発明の吸着装置では、昇降部材の連結部と基板支持部との間にシール部材を設け、このシール部材を貫通ガイド孔に設けた支持壁部と密着させて支持することで貫通ガイド孔のガイド部を収容部に対して密閉するようにしたことから、冷却用ガスを用いて基板の冷却を行う吸着装置において、冷却用空間に導入された冷却用ガスが貫通ガイド孔のガイド部側に漏れることを防止することができ、これにより基板の冷却効率を向上させることができる。 In the suction device of the present invention, a seal member is provided between the connecting portion of the elevating member and the substrate support portion, and the seal member is brought into close contact with the support wall portion provided in the through guide hole to support the through guide hole. Since the guide portion is sealed with respect to the accommodating portion, the cooling gas introduced into the cooling space is placed on the guide portion side of the through guide hole in the adsorption device that cools the substrate using the cooling gas. Leakage can be prevented, which can improve the cooling efficiency of the substrate.
また、本発明においては、昇降部材側にシール部材を設けることによって、貫通ガイド孔の内径をできるだけ小さくすることができ、これにより吸着部分の有効面積を犠牲にすることなく冷却用ガスの貫通ガイド孔のガイド部側への漏れを確実に防止することができる。 Further, in the present invention, by providing the sealing member on the elevating member side, the inner diameter of the through guide hole can be made as small as possible, whereby the through guide of the cooling gas can be guided without sacrificing the effective area of the suction portion. Leakage of the hole to the guide portion side can be reliably prevented.
このように、本発明の吸着装置によれば、基板の冷却効率が高い真空処理装置を提供することができる。 As described above, according to the adsorption device of the present invention, it is possible to provide a vacuum processing device having high substrate cooling efficiency.
本発明において、昇降部材が、その自重によってシール部材が本体部の収容部の支持壁部と密着するように構成されている場合には、シール部材を収容部の支持壁部に押し付ける構成(ばね等)が不要になるので、簡素な構成の吸着装置並びに真空処理装置を提供することができる。 In the present invention, when the elevating member is configured such that the seal member is in close contact with the support wall portion of the accommodating portion of the main body due to its own weight, the sealing member is pressed against the support wall portion of the accommodating portion (spring). Etc.) are not required, so that it is possible to provide a suction device and a vacuum processing device having a simple structure.
以下、本発明の実施の形態を図面を参照して説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
図1(a)は、本発明に係る真空処理装置の一実施の形態であるスパッタリング装置の概略構成図である。図1(b)は、同スパッタリング装置に用いる吸着装置の実施の形態を示す概略構成図で、貫通ガイド孔を説明するための図、図1(c)は、同スパッタリング装置に用いる吸着装置の実施の形態を示す概略構成図で、貫通ガイド孔内に昇降部材が配置された状態を説明するための図である。 FIG. 1A is a schematic configuration diagram of a sputtering apparatus according to an embodiment of the vacuum processing apparatus according to the present invention. FIG. 1B is a schematic configuration diagram showing an embodiment of the suction device used in the sputtering device, and FIG. 1C is a diagram for explaining a through guide hole, and FIG. 1C is a suction device used in the sputtering device. It is a schematic block diagram which shows the embodiment, and is the figure for demonstrating the state which the elevating member is arranged in the through guide hole.
図2(a)は、本実施の形態の昇降部材の要部を示す断面図、図2(b)は、貫通ガイド孔内に配置された昇降部材の要部を示す断面図、図2(c)は、本実施の形態の吸着装置の要部断面図で、昇降部材を本体部の貫通ガイド孔内に配置した状態を示す図、図2(d)は、本実施の形態の吸着装置の要部断面図で、昇降部材によって基板を支持した状態を示す図である。 FIG. 2A is a cross-sectional view showing a main part of the elevating member according to the present embodiment, and FIG. 2B is a cross-sectional view showing a main part of the elevating member arranged in the through guide hole, FIG. 2 (B). c) is a cross-sectional view of a main part of the suction device of the present embodiment, and FIG. 2 (d) is a view showing a state in which the elevating member is arranged in the through guide hole of the main body portion, and FIG. It is a figure which shows the state which supported the substrate by the elevating member in the cross-sectional view of the main part of.
図1(a)に示すように、本実施の形態のスパッタリング装置1は、図示しない真空排気系に接続された真空槽2を有している。
As shown in FIG. 1A, the
この真空槽2内は、スパッタガスを導入するように構成され、その内部の例えば上部に、ターゲット3が配置されている。 The inside of the vacuum chamber 2 is configured to introduce a sputter gas, and the target 3 is arranged, for example, at the upper part of the inside thereof.
このターゲット3は、図示しないスパッタ電源に接続され、負のバイアス電圧が印加されるようになっている。なお、スパッタ電源のプラス側は真空槽2と共に接地されている。 The target 3 is connected to a sputter power supply (not shown) so that a negative bias voltage is applied. The positive side of the sputtering power supply is grounded together with the vacuum chamber 2.
真空槽2内のステージ4上には、基板(吸着対象物)10を吸着保持するための吸着装置5が設けられている。
On the
この吸着装置5は、種々のセラミックス等の誘電体からなる本体部50中に複数の吸着電極11が設けられており、これら吸着電極11に、図示しない吸着電源からそれぞれ電力を供給するように構成されている。
The
図1(b)に示すように、吸着装置5の本体部50の吸着側の部分には、基板10を冷却する冷却用空間51が設けられている。
As shown in FIG. 1 (b), a
そして、吸着装置5の本体部50内には、冷却用空間51と連通して当該空間に冷却用ガスを導入するガス導入孔(図示せず)が設けられている。
A gas introduction hole (not shown) is provided in the
本発明では、冷却用ガスとして、例えばアルゴン(Ar)ガス、窒素(N2)ガス、ヘリウム(He)等の希ガスを用いることができる。In the present invention, as the cooling gas, for example , a rare gas such as argon (Ar) gas, nitrogen (N 2 ) gas, or helium (He) can be used.
冷却用空間51は、本体部50の吸着側の部分に凹部を形成することによって設けられ、吸着装置5上に吸着された基板10の下面と対向するように配置されている。
The
吸着装置5の本体部50には、冷却用空間51に連通し且つ本体部50を貫通してステージ4に到る複数の貫通ガイド孔52が設けられている。
The
これら貫通ガイド孔52の内部には、貫通ガイド孔52を介して基板10を支持して昇降させることにより基板10を吸着装置5上に載置し又は基板10を吸着装置5から離脱させるための昇降部材15がそれぞれ設けられている。
Inside these through
貫通ガイド孔52は、鉛直方向に延びるように形成されたガイド部53を有し、貫通ガイド孔52の上端部には、冷却用空間51と連通する収容部54が設けられている。
The through
そして、貫通ガイド孔52のガイド部53と収容部54との間には、後述する昇降部材15のシール位置決め部15dと対向し、収容部54からガイド部53に向って内径が小さくなるように形成されたテーパ状の支持壁部55が設けられている(図2(b)参照)。
The
本実施の形態の昇降部材15は、例えばステンレス等の金属材料からなるもので、鉛直方向に延びるように形成され駆動機構16(図1(a)参照)に連結された円柱状のシャフトからなる連結部15aと、この連結部15aの上端部に設けられ基板10を支持する円柱状の基板支持部15bとを有している。
The elevating
昇降部材15は、基板10を支持しない状態において、基板支持部15bが貫通ガイド孔52の収容部54内に配置されるとともに、連結部15aが貫通ガイド孔52のガイド部53内に配置されるように構成されている。
In the elevating
本実施の形態の昇降部材15は、一体的に形成され、例えば図2(a)に示すように、連結部15aの外径が基板支持部15bの外径より小さくなるようにそれぞれの寸法が設定されている。
The elevating
ここで、基板支持部15bの連結部15a側の部分には、連結部15aに向って外径が小さくなるようにテーパ状に形成されたシール位置決め部15dが設けられ、このシール位置決め部15dの連結部15a側の部分に、連結部15aより小径の円柱状の溝部15eが設けられている。
Here, a
そして、昇降部材15の連結部15aと基板支持部15bとの間に、貫通ガイド孔52の収容部54をガイド部53に対して密閉するOリング17(シール部材)が設けられている。
An O-ring 17 (seal member) is provided between the connecting
本実施の形態のOリング17は、昇降部材15の溝部15eの外径より若干小さな内径を有し、かつ、基板支持部15bの外径より小さい外径を有するように形成されている。
The O-
そして、Oリング17を昇降部材15に取り付けた場合に、Oリング17が上述したシール位置決め部15d及び溝部15eに密着するとともに、連結部15aの上部の面15fに接触するように、シール位置決め部15d、溝部15e及び連結部15aの上部の面15fの形状と寸法が設定され、またOリング17の寸法が設定されている。
Then, when the O-
さらに、図2(b)に示すように、Oリング17は、昇降部材15を貫通ガイド孔52内に配置した場合に貫通ガイド孔52の支持壁部55と密着するように、Oリング17の寸法並びに貫通ガイド孔52の支持壁部55の形状及び寸法が設定されている。
Further, as shown in FIG. 2B, the O-
なお、本実施の形態の昇降部材15は、基板支持部15bの上面に、例えば樹脂やゴム等の弾性部材からなる平板状の保護部材15cが装着されている。
In the elevating
この保護部材15cは、図2(d)に示すように、昇降部材15によって基板10を支持した場合に、基板10の裏面に傷をつけず、また、ESD(剥離帯電)等の問題を発生させない役割を果たすためのものである。
As shown in FIG. 2D, the
以上述べた本実施の形態の吸着装置5では、昇降部材15の連結部15aと基板支持部15bとの間にシール部材としてOリング17が設けられ、このOリング17を貫通ガイド孔52に設けた支持壁部55と密着させて支持することで貫通ガイド孔52の収容部54をガイド部53に対して密閉するようにしたことから、冷却用ガスを用いて基板10の冷却を行う場合に、冷却用空間51に導入された冷却用ガスが貫通ガイド孔52のガイド部53側に漏れることを防止でき、これにより基板10の冷却効率を向上させることができる。
In the
また、本実施の形態においては、昇降部材15側にOリング17を設けることによって、貫通ガイド孔52の内径をできるだけ小さくすることができ、これにより吸着部分の有効面積を犠牲にすることなく冷却用ガスが貫通ガイド孔52のガイド部53側へ漏れることを確実に防止することができる。
Further, in the present embodiment, by providing the O-
このように、本実施の形態の吸着装置5によれば、基板の冷却効率が高いコンパクトな構成の真空処理装置1を提供することができる。
As described above, according to the
また、本実施の形態においては、昇降部材15が、その自重によってOリング17が貫通ガイド孔52の収容部54の支持壁部55と密着するように構成されていることから、Oリング17を収容部54の支持壁部55に押し付ける構成が不要になり、その結果、簡素な構成の吸着装置並びに真空処理装置を提供することができる。
Further, in the present embodiment, since the elevating
なお、本発明は上述した実施の形態に限られず、種々の変更を行うことができる。 The present invention is not limited to the above-described embodiment, and various modifications can be made.
例えば、上記実施の形態では、昇降部材15にテーパ状のシール位置決め部15dを設けるとともに、貫通ガイド孔52にテーパ状の支持壁部55を設けるようにしたが、本発明はこれに限られず、例えば昇降部材15のシール位置決め部15d及び貫通ガイド孔52の支持壁部55を、昇降部材15及び貫通ガイド孔52の長手方向と直交するように設けることもできる。
For example, in the above embodiment, the elevating
さらに、本発明はスパッタリング装置のみならず、例えば蒸着装置やエッチング装置等の種々の真空処理装置に適用することができる。 Further, the present invention can be applied not only to a sputtering apparatus but also to various vacuum processing apparatus such as a vapor deposition apparatus and an etching apparatus.
1…スパッタリング装置(真空処理装置)
2…真空槽
3…ターゲット
4…ステージ
5…吸着装置
10…基板
11…吸着電極
15…昇降部材
15a…連結部
15b…基板支持部
15c…保護部材
15d…シール位置決め部
15e…溝部
15f…上部の面
16…駆動機構
17…Oリング(シール部材)
50…本体部
51…冷却用空間
52…貫通ガイド孔
53…ガイド部
54…収容部
55…支持壁部 1 ... Sputtering device (vacuum processing device)
2 ... Vacuum tank 3 ...
50 ...
Claims (4)
前記本体部の冷却用空間に連通し且つ当該本体部を貫通する貫通ガイド孔を介して前記基板を支持して昇降させる昇降部材とを有し、
前記昇降部材は、前記基板を支持する基板支持部と、当該基板支持部に連結され駆動機構によって駆動される連結部とを有するとともに、前記基板を支持しない状態において、前記基板支持部が、前記貫通ガイド孔の前記冷却用空間に連通する収容部内に配置されるとともに、前記連結部が、前記貫通ガイド孔の収容部に連通するガイド部内に配置されるように構成された吸着装置であって、
前記昇降部材の前記連結部と前記基板支持部との間には、前記基板支持部から前記連結部に向かって外径が小さくなるようにテーパ状に形成されたシール位置決め部と、前記シール位置決め部と前記連結部との間に形成された前記連結部より小径の円柱状の溝部と、が設けられ、
前記溝部には、前記シール位置決め部に密着する環状のシール部材が装着され、
前記シール部材は、前記基板を支持しない状態において、前記貫通ガイド孔の収容部から前記貫通ガイド孔のガイド部に向けて内径が小さくなるように形成されたテーパ状の支持壁部と密着することで前記貫通ガイド孔のガイド部を前記収容部に対して密閉する
吸着装置。 A main body having an adsorption electrode for adsorbing and holding the substrate in the dielectric and a cooling space for cooling the substrate with gas on the adsorption side.
It has an elevating member that supports and raises and lowers the substrate through a through guide hole that communicates with the cooling space of the main body and penetrates the main body.
The elevating member has a substrate support portion that supports the substrate and a connecting portion that is connected to the substrate support portion and is driven by a drive mechanism. A suction device configured to be arranged in an accommodating portion communicating with the cooling space of the through guide hole and to arrange the connecting portion in a guide portion communicating with the accommodating portion of the through guide hole. ,
Said between said connecting portion and said substrate supporting portion of the elevating member, and the seal positioning portion having an outer diameter which is tapered so as to reduce the direction from the substrate support portion to the connecting portion, the seal positioning A columnar groove having a diameter smaller than that of the connecting portion formed between the portion and the connecting portion is provided.
An annular seal member that is in close contact with the seal positioning portion is attached to the groove portion.
The sealing member is in close contact with a tapered support wall portion formed so that the inner diameter is reduced from the accommodating portion of the through guide hole toward the guide portion of the through guide hole in a state where the substrate is not supported. A suction device that seals the guide portion of the through guide hole with respect to the accommodating portion.
前記真空槽内に設けられた請求項1記載の吸着装置とを備え、
前記吸着装置によって吸着保持された基板に対して所定の処理を行うように構成されている真空処理装置。 With a vacuum tank,
The suction device according to claim 1 provided in the vacuum chamber is provided.
A vacuum processing device configured to perform a predetermined process on a substrate sucked and held by the suction device.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019123742 | 2019-07-02 | ||
JP2019123742 | 2019-07-02 | ||
PCT/JP2020/022121 WO2021002141A1 (en) | 2019-07-02 | 2020-06-04 | Suction device and vacuum process device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021002141A1 JPWO2021002141A1 (en) | 2021-09-13 |
JP6972386B2 true JP6972386B2 (en) | 2021-11-24 |
Family
ID=74100689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020560499A Active JP6972386B2 (en) | 2019-07-02 | 2020-06-04 | Adsorption device and vacuum processing device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6972386B2 (en) |
KR (1) | KR102638389B1 (en) |
CN (1) | CN113939903A (en) |
TW (1) | TWI804737B (en) |
WO (1) | WO2021002141A1 (en) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0432230A (en) * | 1990-05-29 | 1992-02-04 | Tokyo Electron Ltd | Dry washing device |
US5366002A (en) * | 1993-05-05 | 1994-11-22 | Applied Materials, Inc. | Apparatus and method to ensure heat transfer to and from an entire substrate during semiconductor processing |
JP2000195935A (en) * | 1998-12-25 | 2000-07-14 | Nec Kyushu Ltd | Semiconductor manufacture device |
KR100646318B1 (en) * | 2005-08-19 | 2006-11-23 | 동부일렉트로닉스 주식회사 | Plasma etching apparatus |
JP4824590B2 (en) * | 2007-01-31 | 2011-11-30 | 東京エレクトロン株式会社 | Substrate processing equipment |
JP2010021405A (en) * | 2008-07-11 | 2010-01-28 | Hitachi High-Technologies Corp | Plasma processing apparatus |
CN103930985B (en) * | 2011-10-13 | 2017-03-29 | 株式会社爱发科 | Vacuum treatment installation |
JP6224958B2 (en) * | 2013-02-20 | 2017-11-01 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
CN105810612B (en) * | 2016-03-24 | 2018-12-21 | 京东方科技集团股份有限公司 | A kind of cooling equipment of display base plate |
-
2020
- 2020-06-04 JP JP2020560499A patent/JP6972386B2/en active Active
- 2020-06-04 CN CN202080040321.8A patent/CN113939903A/en active Pending
- 2020-06-04 KR KR1020217035777A patent/KR102638389B1/en active IP Right Grant
- 2020-06-04 WO PCT/JP2020/022121 patent/WO2021002141A1/en active Application Filing
- 2020-06-15 TW TW109120010A patent/TWI804737B/en active
Also Published As
Publication number | Publication date |
---|---|
WO2021002141A1 (en) | 2021-01-07 |
TW202117045A (en) | 2021-05-01 |
KR102638389B1 (en) | 2024-02-21 |
JPWO2021002141A1 (en) | 2021-09-13 |
CN113939903A (en) | 2022-01-14 |
TWI804737B (en) | 2023-06-11 |
KR20210147020A (en) | 2021-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100238629B1 (en) | Stage having eletrostatic chuck and plasma processing apparatus using same | |
CN101325169B (en) | Carrying bench and plasma treatment apparatus using the same | |
KR102434559B1 (en) | Mounting table and plasma processing apparatus | |
TWI509725B (en) | Substrate processing device | |
JP5395633B2 (en) | Substrate mounting table for substrate processing apparatus | |
JP7387764B2 (en) | Substrate support carrier with improved bonding layer protection | |
JP7454976B2 (en) | Substrate support stand, plasma processing system, and edge ring replacement method | |
US20110186229A1 (en) | Gas shower structure and substrate processing apparatus | |
JP5348919B2 (en) | Electrode structure and substrate processing apparatus | |
WO2016167233A1 (en) | Substrate-holding mechanism, film formation device, and method for holding substrate | |
CN1472037A (en) | Cling table and basement machining apparatus | |
US8141514B2 (en) | Plasma processing apparatus, plasma processing method, and storage medium | |
TWI512885B (en) | Substrate processing device | |
JP6972386B2 (en) | Adsorption device and vacuum processing device | |
TWI549221B (en) | Electrostatic fixture | |
JP5411098B2 (en) | Dividable electrode, plasma processing apparatus using the electrode, and electrode exchange method | |
TWI642868B (en) | Gate valve device and plasma processing device | |
KR100648402B1 (en) | Apparatus for processing substrate with plasma | |
CN102543816B (en) | Static sucker | |
KR20070069493A (en) | Lift pin module of fpd manufacturing machine | |
JP3188057B2 (en) | Electrostatic chuck | |
KR100638059B1 (en) | Apparatus for processing substrate with plasma | |
TWI727610B (en) | Electrostatic chuck and its plasma processing device | |
JP4885585B2 (en) | Plasma processing apparatus, plasma processing method, and storage medium | |
JP4776560B2 (en) | Vacuum processing equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201028 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210720 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210916 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20210916 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211019 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211102 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6972386 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |