JP6971699B2 - Substrate processing method, storage medium and substrate processing equipment - Google Patents

Description

The present invention relates to a substrate processing method, a storage medium and a substrate processing apparatus.

In the manufacturing process of a semiconductor device that forms a laminated structure of integrated circuits on the surface of a semiconductor wafer (hereinafter referred to as a wafer) that is a substrate, a natural oxide film formed on the peripheral edge portion (edge region) of the wafer is used as a phosphoric acid. It is removed with a chemical solution such as (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2011-66194

By the way, when the natural oxide film is removed with hydrofluoric acid, the chemical solution touches the silicon wafer. Normally, the surface of a wafer is hydrophilic due to a hydroxyl group (-OH), but this hydroxyl group is changed to a hydrogen termination (-H) by hydrofluoric acid. This makes the surface of the wafer hydrophobic. When hydrofluoric acid is supplied to this hydrophobized surface, the hydrofluoric acid can be scattered (splashed) toward the inner circumference side of the supply position and become a particle source. In particular, in recent years, the particle size of particles to be inspected has become smaller, and the inspection range of particles has expanded in the radial direction, so there is an urgent need to take measures against particles.

The present invention has been made in consideration of such points, and an object of the present invention is to provide a substrate processing method, a storage medium, and a substrate processing apparatus capable of suppressing the generation of particles in the peripheral portion of the substrate. ..

One embodiment of the present invention is
It is a substrate processing method that removes the film formed on the peripheral edge of the substrate.
The holding process for holding the substrate horizontally and
A rotation start step for starting the rotation of the held substrate, and
The first treatment liquid containing hydrofluoric acid that makes the substrate hydrophobic is supplied to the film formed on the peripheral portion of the rotating substrate to remove the film, and the first treatment on the substrate. A substrate processing method comprising a treatment liquid supply step of supplying a second treatment liquid for hydrophilizing the substrate to the liquid.
I will provide a.

One embodiment of the present invention is
When executed by a computer for controlling the operation of the substrate processing apparatus, the computer controls the substrate processing apparatus to execute the substrate processing method according to any one of claims 1 to 6. The storage medium on which the program is recorded,
I will provide a.

Other embodiments of the invention include
A substrate processing device that removes the film formed on the peripheral edge of the substrate.
A holding part that holds the board horizontally,
A rotary drive unit that rotates the holding unit, and
A first treatment liquid supply including a first treatment liquid nozzle for supplying a first treatment liquid containing hydrofluoric acid that makes the substrate hydrophobic to the membrane formed on the peripheral portion of the substrate held by the holding portion. Department and
A second treatment liquid supply unit including a second treatment liquid nozzle for supplying the second treatment liquid for hydrophilizing the substrate to the first treatment liquid on the substrate.
With a control unit,
The control unit drives the rotation drive unit to start rotation of the substrate held by the holding unit, and then supplies the rotating substrate with the first treatment liquid from the first treatment liquid nozzle. A substrate processing apparatus that controls the rotation drive unit, the first treatment liquid supply unit, and the second treatment liquid supply unit so that the second treatment liquid is supplied from the second treatment liquid nozzle.
I will provide a.

According to the present invention, it is possible to suppress the generation of particles at the peripheral edge of the substrate.

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. FIG. 2 is a schematic vertical sectional view of the substrate processing apparatus according to the present embodiment. FIG. 3 is a schematic plan view showing each nozzle of FIG. 2. FIG. 4 is a control block diagram of the substrate processing apparatus shown in FIG. FIG. 5A is a schematic plan view for explaining a rotation start step in the substrate processing method according to the present embodiment. FIG. 5B is a schematic plan view for explaining the discharge start step of hydrofluoric acid and SC1 following the rotation start step shown in FIG. 5A. FIG. 5C is a schematic plan view for explaining a second processing liquid nozzle advancing step following the discharge starting step shown in FIG. 5B. FIG. 5D is a schematic plan view for explaining the first processing liquid nozzle advancing step following the second processing liquid nozzle advancing step shown in FIG. 5C. FIG. 5E is a schematic plan view for explaining a natural oxide film removing step following the first treatment liquid nozzle advancing step shown in FIG. 5D. FIG. 5F is a schematic plan view for explaining a first treatment liquid nozzle retreat step following the natural oxide film removing step shown in FIG. 5E. FIG. 5G is a schematic plan view for explaining a second treatment liquid nozzle retreat step following the first treatment liquid nozzle retreat step shown in FIG. 5F. FIG. 6A is a schematic plan view for explaining a DIW discharge start step following the second treatment liquid nozzle retreat step shown in FIG. 5G. FIG. 6B is a schematic plan view for explaining a DIW nozzle advancing step following the ejection start step shown in FIG. 6A. FIG. 6C is a schematic plan view for explaining a rinsing processing step following the DIW nozzle advancing step shown in FIG. 6B. FIG. 6D is a schematic plan view for explaining a DIW nozzle retreat step following the rinsing treatment step shown in FIG. 6C. FIG. 7 is a schematic plan view for explaining a wafer drying step following the DIW nozzle retracting step shown in FIG. 6D. FIG. 8 is a schematic plan view for explaining a modification of the natural oxide film removing step shown in FIG. 5E.

Hereinafter, an embodiment of the substrate processing method, storage medium, and substrate processing apparatus of the present invention will be described with reference to the drawings. It should be noted that the configuration shown in the drawings attached to the present specification may include parts in which the size, scale, etc. are changed from those of the actual product for convenience of illustration and comprehension.

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In the following, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.

As shown in FIG. 1, the board processing system 1 includes an loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

The loading / unloading station 2 includes a carrier mounting section 11 and a transport section 12. A plurality of substrates, and in the present embodiment, a plurality of carriers C for accommodating a semiconductor wafer (hereinafter referred to as a wafer W) in a horizontal state are mounted on the carrier mounting portion 11.

The transport section 12 is provided adjacent to the carrier mounting section 11, and includes a substrate transport device 13 and a delivery section 14 inside. The substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and transfers the wafer W between the carrier C and the delivery portion 14 by using the wafer holding mechanism. conduct.

The processing station 3 is provided adjacent to the transport unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on both sides of the transport unit 15.

The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 by using the wafer holding mechanism. I do.

The processing unit 16 performs predetermined substrate processing on the wafer W transported by the substrate transport device 17.

Further, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the board processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

The program may be recorded on a storage medium readable by a computer, and may be installed from the storage medium in the storage unit 19 of the control device 4. Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C mounted on the carrier mounting portion 11 and receives the taken out wafer W. Placed on Watanabe 14. The wafer W placed on the delivery section 14 is taken out from the delivery section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

The wafer W carried into the processing unit 16 is processed by the processing unit 16, then carried out from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W mounted on the delivery section 14 is returned to the carrier C of the carrier mounting section 11 by the substrate transfer device 13.

The processing unit 16 shown in FIG. 1 includes a substrate processing apparatus 30 shown in FIG. Here, the substrate processing apparatus 30 in the present embodiment is an apparatus for removing the natural oxide film formed on the peripheral edge portion of the wafer W.

As shown in FIG. 2, the substrate processing apparatus 30 includes a holding portion 31 that horizontally holds a substrate W (hereinafter, also referred to as a wafer W) such as a semiconductor wafer made of silicon, and a rotating shaft 32 that extends downward from the holding portion 31. And a rotation drive unit 33 that rotates the holding unit 31 via the rotation shaft 32. The holding portion 31 is adapted to hold the wafer W placed on the holding portion 31 by, for example, vacuum suction.

As shown in FIG. 1, the rotating shaft 32 extends in the vertical direction. The rotation drive unit 33 includes a pulley 34 provided at the lower end of the rotation shaft 32, a motor 35, a pulley 36 provided on the rotation shaft of the motor 35, and a drive belt wound around the pulley 34 and the pulley 36. 37 and. With such a configuration, the rotational driving force of the motor 35 is transmitted to the rotating shaft 32 via the driving belt 37. The rotating shaft 32 is rotatably held in the chamber 39 via the bearing 38.

The holding portion 31 is housed in the chamber 39. An upper opening 40 is formed in the upper portion (ceiling portion) of the chamber 39 to allow a gas such as N2 gas (nitrogen gas) to pass through the wafer W in a downflow. Further, in the lower portion (bottom portion) of the chamber 39, a lower opening 41 for discharging the gas sent in the downflow from the upper opening 40 from the inside of the chamber 39 is formed. Further, on the side portion of the chamber 39, a side opening 42 for carrying the wafer W into the chamber 39 and carrying out the wafer W from the chamber 39 is formed. The side opening 42 is provided with a shutter 43 that can be opened and closed.

Further, as shown in FIGS. 2 and 3, a first treatment liquid nozzle 51 for supplying hydrofluoric acid to the peripheral edge portion of the wafer W held by the holding portion 31 is provided in the chamber 39. The first treatment liquid nozzle 51 is configured to discharge hydrofluoric acid at a predetermined angle with respect to the surface of the wafer W. More specifically, although the illustration is simplified in FIG. 2, the discharge angle of hydrofluoric acid is inclined at a predetermined angle with respect to the horizon in the vertical cross-sectional view, and the discharged hydrofluoric acid is vertical. It is ejected diagonally toward the downstream side in the rotation direction of the wafer W from below. Further, in a plan view, the hydrofluoric acid discharged from the first treatment liquid nozzle 51 is discharged diagonally toward the downstream side in the rotation direction of the wafer W from the outside in the radial direction of the wafer W. Similar to the first treatment liquid nozzle 51, a second treatment liquid nozzle 61 and a DIW nozzle 71 are also provided. As shown in FIG. 3, the second processing liquid nozzle 61 and the DIW nozzle 71 are arranged at different positions in the circumferential direction of the wafer W with respect to the first processing liquid nozzle 51.

As shown in FIG. 2, the first treatment liquid nozzle 51 supplies hydrofluoric acid (HF, the first treatment liquid) to the peripheral edge portion of the wafer W held by the holding portion 31. More specifically, the first treatment liquid supply source 53 is connected to the first treatment liquid nozzle 51 via the first treatment liquid supply pipe 52, and the first treatment liquid supply source 53 to the first treatment liquid supply source 53. The hydrofluoric acid is supplied to the first treatment liquid nozzle 51 via the supply pipe 52. The first treatment liquid supply pipe 52 is provided with a first treatment liquid valve 54 that controls the presence / absence and supply amount of hydrofluoric acid to the first treatment liquid nozzle 51. The first treatment liquid nozzle 51, the first treatment liquid supply pipe 52, the first treatment liquid supply source 53, and the first treatment liquid valve 54 supply hydrofluoric acid to the peripheral portion of the wafer W held by the holding portion 31. The first treatment liquid supply unit 50 is configured.

The second treatment liquid nozzle 61 is adapted to supply SC1 (a mixed solution of ammonia and hydrogen peroxide solution, a second treatment liquid) to the peripheral edge portion of the wafer W held by the holding portion 31. More specifically, the second treatment liquid supply source 63 is connected to the second treatment liquid nozzle 61 via the second treatment liquid supply pipe 62, and the second treatment liquid supply source 63 to the second treatment liquid supply source 63. SC1 is supplied to the second treatment liquid nozzle 61 via the supply pipe 62. The second treatment liquid supply pipe 62 is provided with a second treatment liquid valve 64 that controls the presence / absence and supply amount of SC1 to the second treatment liquid nozzle 61. The SC1 is supplied to the peripheral edge of the wafer W held by the holding portion 31 by the second treatment liquid nozzle 61, the second treatment liquid supply pipe 62, the second treatment liquid supply source 63, and the second treatment liquid valve 64. The second treatment liquid supply unit 60 is configured.

The DIW nozzle 71 is adapted to supply DIW (deionized water) to the peripheral edge portion of the wafer W held by the holding portion 31. More specifically, the DIW supply source 73 is connected to the DIW nozzle 71 via the DIW supply pipe 72, and DIW is supplied from the DIW supply source 73 to the DIW nozzle 71 via the DIW supply pipe 72. It has become like. The DIW supply pipe 72 is provided with a DIW valve 74 that controls the presence / absence and supply amount of DIW to the DIW nozzle 71. The DIW nozzle 71, the DIW supply pipe 72, the DIW supply source 73, and the DIW valve 74 constitute a DIW supply unit 70 that supplies DIW to the peripheral portion of the wafer W held by the holding unit 31.

As shown in FIG. 3, the first treatment liquid nozzle 51 is connected to the first treatment liquid nozzle driving unit 55. The first processing liquid nozzle driving unit 55 connects the first processing liquid nozzle 51 between the first advancing position P1 for supplying hydrofluoric acid to the peripheral edge portion of the wafer W and the first retracting position Q1 retreating from the wafer W. The first treatment liquid nozzle 51 is moved forward and backward. The first processing liquid nozzle 51 moves in the radial direction of the wafer W between the first advancing position P1 and the first retracting position Q1. The first advancing position P1 is set to a position where hydrofluoric acid can be supplied so that the peripheral edge portion (region extending from the outer edge to a predetermined width) of the natural oxide film formed on the surface of the wafer W can be removed. The first retracting position Q1 is set to a position where the hydrofluoric acid discharged from the first processing liquid nozzle 51 does not reach the surface of the wafer W.

The second treatment liquid nozzle 61 is connected to the second treatment liquid nozzle driving unit 65. The second processing liquid nozzle driving unit 65 connects the second processing liquid nozzle 61 between the second advancing position P2 for supplying SC1 to the peripheral edge portion of the wafer W and the second retreating position Q2 retreating from the wafer W. The second treatment liquid nozzle 61 is advanced and retracted. The second processing liquid nozzle 61 moves in the radial direction of the wafer W between the second advancing position P2 and the second retracting position Q2. The second forward position P2 is set to a position where SC1 can be supplied to the hydrofluoric acid remaining on the surface of the wafer W and before drying. More specifically, in the second forward position P2, the supply position of SC1 to the wafer W is arranged closer to the downstream side in the rotation direction of the wafer W than the supply position of hydrofluoric acid to the wafer W. It is in a position. Further, the second forward position P2 is such that the supply position of SC1 to the wafer W is closer to the center O of the wafer W than the supply position of hydrofluoric acid to the wafer W. That is, the distance from the center O of the wafer W to the supply position of SC1 is shorter than the distance from the center O to the supply position of hydrofluoric acid. The second retracting position Q2 is set to a position where the SC1 discharged from the second processing liquid nozzle 61 does not reach the surface of the wafer W.

The DIW nozzle 71 is connected to the DIW nozzle drive unit 75. The DIW nozzle drive unit 75 advances the DIW nozzle 71 between the third forward position P3 that supplies DIW to the peripheral edge portion of the wafer W and the third backward position Q3 that is retracted from the wafer W. Retreat. The DIW nozzle 71 moves in the radial direction of the wafer W between the third forward position P3 and the third backward position Q3. The third forward position P3 is set to a position where DIW can be supplied so that the hydrofluoric acid and SC1 remaining on the surface of the wafer W can be washed away. More specifically, the third forward position P3 is such that the supply position of the DIW to the wafer W is closer to the center O of the wafer W than the supply position of the SC1 to the wafer W. That is, the distance from the center O of the wafer W to the supply position of the DIW is shorter than the distance from the center O to the supply position of the SC1. The third retracting position Q3 is set to a position where the DIW ejected from the DIW nozzle 71 does not reach the surface of the wafer W.

As shown in FIG. 4, the control of each component of the substrate processing device 30 is performed by the control unit 18 of the control device 4 described above. Specifically, the holding unit 31, the rotation driving unit 33, the first processing liquid supply unit 50, the second processing liquid supply unit 60, and the DIW supply unit 70 are connected to the control unit 18, respectively. Further, the control unit 18 is connected to the first processing liquid nozzle driving unit 55, the second processing liquid nozzle driving unit 65, and the DIW nozzle driving unit 75. Then, the control unit 18 controls each component by sending a control signal to each component connected to the control unit 18. The specific contents of the control of each component by the control unit 18 will be described later.

Next, the operation of the substrate processing apparatus 30 (wafer W processing method) as described above will be described with reference to FIGS. 5A to 5G, FIGS. 6A to 6D, and explanatory views shown in FIGS. 7. The operation of the substrate processing apparatus 30 as shown below is performed by the control unit 18 controlling each component of the substrate processing apparatus 30 according to a program (recipe) stored in the storage medium.

[Holding process]
First, the wafer W is held horizontally. More specifically, the wafer W is transferred from the outside of the substrate processing device 30 into the chamber 39 through the side opening 42 of the chamber 39 by the substrate transfer device 17 shown in FIG. Specifically, the wafer W is placed on the holding portion 31 in the chamber 39 by the substrate transport device 17. Here, a hydrophilic natural oxide film is formed on the surface of the wafer W placed on the holding portion 31.

[Rotation start process]
Next, as shown in FIG. 5A, the rotation of the wafer W held by the holding portion 31 is started. More specifically, the rotation drive unit 33 (see FIG. 2) is driven to rotate the rotation shaft 32 around an axis extending in the vertical direction. As a result, the wafer W held by the holding portion 31 is rotated in the horizontal plane. At this time, the rotary driving force of the motor 35 is applied to the rotary shaft 32 via the pulley 36, the drive belt 37, and the pulley 34, so that the rotary shaft 32 is rotated. Here, for example, the rotation speed of the wafer W is set to 1800 rpm.

[Treatment liquid supply process]
Next, hydrofluoric acid and SC1 are supplied to the peripheral edge of the wafer W. That is, the hydrofluoric acid that makes the surface of the wafer W hydrophobic is supplied from the first treatment liquid nozzle 51 to the natural oxide film formed on the peripheral edge of the rotating wafer W, and the natural oxide film is removed. Further, SC1 for hydrophilizing the wafer W is supplied from the second treatment liquid nozzle 61 to the hydrofluoric acid on the surface of the wafer W.

<Discharge start process>
In this treatment liquid supply step, first, the first treatment liquid valve 54 (see FIG. 2) opens, and as shown in FIG. 5B, hydrofluoric acid is discharged from the first treatment liquid nozzle 51 located at the first retreat position Q1. Will be done. Further, the second treatment liquid valve 64 is opened, and SC1 is discharged from the second treatment liquid nozzle 61 located at the second retreat position Q2. Hydrofluoric acid and SC1 are discharged for a predetermined time while the first treatment liquid nozzle 51 is maintained at the first retreat position Q1 and the second treatment liquid nozzle 61 is maintained at the second retreat position Q2. This makes it possible to stabilize the discharge amount of hydrofluoric acid and SC1 even when the discharge amount of hydrofluoric acid and SC1 is small. For example, hydrofluoric acid and SC1 continue to be discharged at a discharge rate of 15 mL / min for 3 seconds, respectively.

<Second treatment liquid nozzle advance step>
Next, as shown in FIG. 5C, the second processing liquid nozzle driving unit 65 (see FIG. 3) is driven, and the second processing liquid nozzle 61 advances from the second retracting position Q2 to the second advancing position P2. For example, the second treatment liquid nozzle 61 advances from the second retracting position Q2 to the second advancing position P2 in 0.5 seconds. During this period, the SC1 continues to be discharged from the second treatment liquid nozzle 61, and the second treatment liquid nozzle 61 advances to the second advance position P2 to start supplying the SC1 to the peripheral edge portion of the wafer W.

<First treatment liquid nozzle advance step>
Next, as shown in FIG. 5D, the first processing liquid nozzle driving unit 55 (see FIG. 3) is driven, and the first processing liquid nozzle 51 advances from the first retracting position Q1 to the first advancing position P1. For example, the first treatment liquid nozzle 51 advances from the first retracting position Q1 to the first advancing position P1 in 0.5 seconds. During this period, hydrofluoric acid continues to be discharged from the first treatment liquid nozzle 51, and the first treatment liquid nozzle 51 advances to the first advance position P1 to start supplying hydrofluoric acid to the peripheral portion of the wafer W. do. In this way, the first treatment liquid nozzle advance step is performed after the second treatment liquid nozzle advance step, and hydrofluoric acid is supplied to the wafer W after the supply of SC1 to the wafer W is started.

<Natural oxide film removal process>
Next, as shown in FIG. 5E, the first processing liquid nozzle 51 is maintained at the first advancing position P1 and the second processing liquid nozzle 61 is maintained at the second advancing position P2 for a predetermined time. Then, hydrofluoric acid is continuously supplied from the first treatment liquid nozzle 51 to the natural oxide film formed on the peripheral edge of the rotating wafer W for a predetermined time. The hydrofluoric acid supply position from the first treatment liquid nozzle 51 located at the first advance position P1 is such that a region of the natural oxide film on the wafer W over a predetermined width can be removed from the outer edge. .. As a result, the region of the natural oxide film is etched and removed by hydrofluoric acid, and the surface of the peripheral portion of the wafer W is exposed. For example, hydrofluoric acid continues to be discharged from the first processing liquid nozzle 51 located at the first advancing position P1 for 60 seconds. The hydrofluoric acid discharged to the peripheral edge portion of the wafer W receives centrifugal force due to the rotation of the wafer W, is flowed to the outer peripheral side from the position where the hydrofluoric acid is supplied to the wafer W, and is discharged from the outer edge of the wafer W. In the natural oxide film removing step, in order to improve the removal accuracy of the natural oxide film, it is preferable that the rotation speed of the wafer W is high to some extent, for example, at 1800 rpm described above. As a result, centrifugal force can be applied to the hydrofluoric acid supplied to the wafer W, and the hydrofluoric acid on the surface of the wafer W can be suppressed from advancing to the inner peripheral side. In this case, it is possible to improve the positional accuracy of the outer edge of the natural oxide film remaining on the surface of the wafer W after etching.

By the way, the supply position of SC1 from the second processing liquid nozzle 61 located at the second advancing position P2 is set according to the rotation speed of the wafer W and the discharge amount of hydrofluoric acid from the first processing liquid nozzle 51. .. For example, as the rotation speed of the wafer W decreases, it is preferable that the supply position of the SC1 approaches the supply position of hydrofluoric acid from the first treatment liquid nozzle 51 located at the first advance position P1. Further, it is preferable that the supply position of SC1 is closer to the supply position of hydrofluoric acid as the discharge amount of hydrofluoric acid decreases. In this way, the second treatment liquid nozzle 61 located at the second forward position P2 can supply SC1 to the hydrofluoric acid remaining on the surface of the wafer W and before drying. Therefore, it is possible to prevent the surface of the wafer W from being hydrophobized, and to make the surface of the wafer W hydrophilic by touching SC1. The SC1 discharged to the peripheral edge of the wafer W receives centrifugal force due to the rotation of the wafer W, is flowed to the outer peripheral side from the supply position of the SC1 to the wafer W, and is discharged from the outer edge of the wafer W.

<First treatment liquid nozzle retreat process>
Next, as shown in FIG. 5F, the first processing liquid nozzle driving unit 55 is driven, and the first processing liquid nozzle 51 retreats from the first advancing position P1 to the first retreating position Q1. For example, the first processing liquid nozzle 51 retreats from the first advancing position P1 to the first retreating position Q1 in 0.5 seconds. During this period, hydrofluoric acid continues to be discharged from the first treatment liquid nozzle 51, but the supply of hydrofluoric acid to the peripheral portion of the wafer W ends with the retreat of the first treatment liquid nozzle 51.

<Second treatment liquid nozzle retreat process>
Next, as shown in FIG. 5G, the second processing liquid nozzle driving unit 65 is driven, and the second processing liquid nozzle 61 retreats from the second advancing position P2 to the second retreating position Q2. For example, the second processing liquid nozzle 61 retreats from the second advancing position P2 to the second retreating position Q2 in 0.5 seconds. During this period, SC1 continues to be discharged from the second treatment liquid nozzle 61, but as the second treatment liquid nozzle 61 recedes, the supply of SC1 to the peripheral portion of the wafer W ends. In this way, the second treatment liquid nozzle retreat step is performed after the first treatment liquid nozzle retreat step, and after the supply of hydrofluoric acid to the wafer W is finished, the supply of SC1 to the wafer W is finished. ..

<Discharge stop process>
After that, the first treatment liquid valve 54 closes, and the discharge of hydrofluoric acid from the first treatment liquid nozzle 51 located at the first retreat position Q1 is stopped. Further, the second treatment liquid valve 64 is closed, and the discharge of SC1 from the second treatment liquid nozzle 61 located at the second retreat position Q2 is stopped. In this way, the treatment liquid supply process is completed.

[Rinse liquid supply process]
After the treatment liquid supply step described above, DIW as a rinsing liquid is supplied to the peripheral edge portion of the wafer W. In the rinsing liquid supply process, the rotation speed of the wafer W is lowered. Here, for example, the rotation speed of the wafer W is set to 600 rpm.

<Discharge start process>
First, the DIW valve 74 opens, and as shown in FIG. 6A, DIW is discharged from the DIW nozzle 71 located at the third retracting position Q3. The DIW is discharged for a predetermined time while the DIW nozzle 71 is maintained at the third retracted position Q3. This makes it possible to stabilize the DIW discharge amount even when the DIW discharge amount is small. For example, DIW continues to be discharged at a discharge rate of 15 mL / min for 1 second.

<DIW nozzle advance process>
Next, as shown in FIG. 6B, the DIW nozzle driving unit 75 is driven to advance the DIW nozzle 71 from the third retracting position Q3 to the third forward position P3. For example, the DIW nozzle 71 advances from the third retracting position Q3 to the third forward position P3 in 1 second. During this period, DIW continues to be ejected from the DIW nozzle 71, and the DIW nozzle 71 advanced to the third advance position P3 starts supplying the DIW to the peripheral portion of the wafer W.

<Rinse treatment process>
Next, as shown in FIG. 6C, the DIW nozzle 71 is maintained at the third forward position P3 for a predetermined time. The third forward position P3 of the DIW nozzle 71 is such that the supply position of DIW to the wafer W is closer to the center O of the wafer W than the supply position of SC1 to the wafer W. As a result, the wafer W is rinsed, and hydrofluoric acid and SC1 remaining on the surface of the wafer W can be washed away. In the rinsing liquid supply step, since the first treatment liquid nozzle 51 and the second treatment liquid nozzle 61 are retracted, the third forward position P3 of the DIW nozzle 71 in the circumferential direction is limited to the position shown in FIG. 6C. There is no such thing.

In the rinsing process, DIW is continuously supplied from the DIW nozzle 71 to the peripheral edge of the rotating wafer W for a predetermined time. For example, the DIW continues to be ejected from the DIW nozzle 71 located at the third forward position P3 for 15 seconds. The DIW discharged to the peripheral edge of the wafer W receives centrifugal force due to the rotation of the wafer W, is flowed from the supply position of the DIW to the wafer W to the outer peripheral side, and is discharged from the outer edge of the wafer W.

<DIW nozzle retreat process>
Next, as shown in FIG. 6D, the DIW nozzle drive unit 75 is driven, and the DIW nozzle 71 retracts from the third forward position P3 to the third retract position Q3. For example, the DIW nozzle 71 retreats from the third forward position P3 to the third retreat position Q3 in 1 second. During this period, DIW continues to be ejected from the DIW nozzle 71, but as the DIW nozzle 71 retracts, the supply of DIW to the peripheral portion of the wafer W ends.

<Discharge stop process>
After that, the DIW valve 74 closes, and the discharge of DIW from the DIW nozzle 71 located at the third retracting position Q3 is stopped. In this way, the rinsing liquid supply process is completed.

[Drying process]
After the rinse liquid supply step described above, as shown in FIG. 7, the rotation speed of the wafer W is increased to dry the wafer W. For example, the rotation speed of the wafer W is set to 2500 rpm. As a result, the DIW remaining on the surface of the wafer W receives the centrifugal force due to the rotation of the wafer W, is flowed from the supply position of the DIW to the wafer W to the outer peripheral side, and is discharged from the outer edge of the wafer W. Therefore, DIW is removed from the surface of the wafer W, and the surface of the wafer W is dried.

As described above, according to the present embodiment, hydrofluoric acid is supplied to the natural oxide film formed on the peripheral edge of the rotating wafer W to remove the natural oxide film, and the hydrofluoric acid on the surface of the wafer W is used. SC1 is supplied. As a result, SC1 can be supplied to the hydrofluoric acid remaining on the surface before the hydrofluoric acid on the surface of the wafer W dries, and the surface of the wafer W can be made hydrophilic. That is, it is possible to prevent the hydrofluoric acid on the surface of the wafer W from drying and making the surface hydrophobic. Therefore, it is possible to suppress the hydrofluoric acid and SC1 supplied to the peripheral edge portion of the wafer W from scattering toward the inner peripheral side, and to suppress the formation of a particle source. As a result, it is possible to suppress the generation of particles at the peripheral edge of the wafer W.

Further, according to the present embodiment, the supply position of SC1 to the surface of the wafer W is closer to the center O of the surface of the wafer W than the supply position of hydrofluoric acid to the surface of the wafer W. As a result, SC1 can be supplied to the region on the inner peripheral side of the hydrofluoric acid in the radial direction of the wafer W. Therefore, it is possible to suppress the supply of SC1 to the hydrofluoric acid supplied to the surface of the wafer W, further suppress the drying of the hydrofluoric acid on the surface of the wafer W, and further suppress the surface. It can be made hydrophilic.

Further, according to the present embodiment, after starting the supply of SC1 to the surface of the wafer W, hydrofluoric acid is supplied to the surface of the wafer W. This makes it possible to prevent hydrofluoric acid from being supplied to the surface of the wafer W before SC1 is supplied. Therefore, it is possible to further suppress the drying of hydrofluoric acid on the surface of the wafer W, and it is possible to further make the surface hydrophilic.

Further, according to the present embodiment, after the supply of hydrofluoric acid to the surface of the wafer W is terminated, the supply of SC1 to the wafer W is terminated. This makes it possible to prevent SC1 from being supplied to the hydrofluoric acid supplied to the surface of the wafer W. Therefore, it is possible to further suppress the drying of hydrofluoric acid on the surface of the wafer W, and it is possible to further make the surface hydrophilic.

Further, according to the present embodiment, SC1 is supplied to hydrofluoric acid on the surface of the wafer W. As a result, the surface of the wafer W exposed by removing the natural oxide film can be hydrophilized by SC1. Further, since the SC1 has a low viscosity, the discharge amount can be stabilized even if the discharge amount from the second treatment liquid nozzle 61 is reduced in order to supply the SC1 to the limited region of the peripheral portion of the wafer W. can. Furthermore, since SC1 has a low viscosity, it can be easily washed away by DIW and has low toxicity. Therefore, the handleability of the second treatment liquid can be improved.

In the above-described embodiment, an example in which hydrofluoric acid is used as the first treatment liquid for making the surface of the wafer W hydrophobic has been described. However, the present invention is not limited to this, and the first treatment liquid may be, for example, a dilute hydrofluoric acid aqueous solution (DHF) which is an aqueous solution containing hydrofluoric acid.

Further, in the above-described embodiment, an example in which SC1 is used as the second treatment liquid supplied to the hydrofluoric acid on the surface of the wafer W has been described. However, the present invention is not limited to this, and the second treatment liquid may be any liquid that has oxidizing power and does not have an etching action on the silicon wafer W, for example, nitric acid or sulfuric acid. Etc. can also be used. Alternatively, DIW can be used as the second treatment liquid. In this case, DIW can be supplied to the hydrofluoric acid remaining on the surface before the hydrofluoric acid on the surface of the wafer W dries, and the surface of the wafer W can be prevented from drying. Therefore, it is possible to suppress the hydrofluoric acid and SC1 supplied to the peripheral edge portion of the wafer W from scattering toward the inner peripheral side, and to suppress the formation of a particle source. Further, since DIW is weaker than SC1 but has oxidizing power, the surface of the wafer W can be made hydrophilic. When DIW is used as the second treatment liquid, after the first treatment liquid nozzle retreat step, the second treatment liquid nozzle 61 is not retracted, but is maintained at the second forward position P2 to continue supplying DIW. , The rinse liquid supply process can also be performed, and the process can be simplified. As the second treatment liquid, ozone water can be used instead of DIW.

Further, in the above-described embodiment, in the natural oxide film removing step, DIW may be supplied to the peripheral edge portion of the wafer W as shown in FIG.

In this case, for example, in the discharge start process of the processing liquid supply process, DIW is discharged from the DIW nozzle 71, and the DIW nozzle 71 is moved from the third retracting position Q3 to the third advancing position P3 before the second processing liquid nozzle advancing step. To move forward. During this time, DIW is continuously discharged from the DIW nozzle 71. As a result, the hydrofluoric acid discharged from the first treatment liquid nozzle 51 can be supplied to the liquid film of DIW supplied on the surface of the wafer W, and the hydrofluoric acid supplied to the peripheral edge portion of the wafer W can be supplied. It is possible to suppress scattering to the inner peripheral side and suppress the formation of a particle source. As shown in FIG. 8, it is preferable that the DIW supply position is arranged in the vicinity of the wafer W on the upstream side in the rotation direction of the hydrofluoric acid supply position in a plan view.

Then, after the second treatment liquid nozzle retreat step, the rinse liquid supply step can be performed by maintaining the DIW nozzle 71 at the third forward position P3 and continuing to supply the DIW without retreating the DIW nozzle 71. It can be simplified.

The present invention is not limited to the above-described embodiment and modification as it is, and at the implementation stage, the components can be modified and embodied within a range that does not deviate from the gist thereof. In addition, various inventions can be formed by an appropriate combination of the plurality of components disclosed in the above-described embodiments and modifications. Some components may be removed from all the components shown in the embodiments and modifications. In addition, components spanning different embodiments and variants may be combined as appropriate.

18 Control unit 30 Board processing device 31 Holding unit 33 Rotation drive unit 50 First processing liquid supply unit 51 First processing liquid nozzle 55 First processing liquid nozzle driving unit 60 Second processing liquid supply unit 61 Second processing liquid nozzle 65 2 Treatment liquid nozzle drive unit 70 DIW supply unit 71 DIW nozzle P1 1st advance position P2 2nd advance position Q1 1st retract position Q2 2nd retract position W wafer

Claims (15)

It is a substrate processing method that removes the film formed on the peripheral edge of the substrate.
The holding process for holding the substrate horizontally and
A rotation start step for starting the rotation of the held substrate, and
The first treatment liquid containing hydrofluoric acid that makes the substrate hydrophobic is supplied to the film formed on the peripheral portion of the rotating substrate to remove the film, and the first treatment on the substrate. liquid, Bei give a, a treatment liquid supplying step of supplying the second treatment liquid hydrophilic the substrate,
A substrate processing method in which in the processing liquid supply step, the supply position of the second treatment liquid to the substrate is closer to the center of the substrate than the supply position of the first treatment liquid to the substrate. The substrate processing method according to claim 1, wherein in the treatment liquid supply step, after the supply of the second treatment liquid to the substrate is started, the first treatment liquid is supplied to the substrate. The substrate processing method according to claim 1 or 2 , wherein in the treatment liquid supply step, the supply of the first treatment liquid to the substrate is terminated, and then the supply of the second treatment liquid to the substrate is terminated. The substrate processing method according to any one of claims 1 to 3 , wherein DIW is supplied to the peripheral portion of the substrate in the processing liquid supply step. It is a substrate processing method that removes the film formed on the peripheral edge of the substrate.
The holding process for holding the substrate horizontally and
A rotation start step for starting the rotation of the held substrate, and
The first treatment liquid containing hydrofluoric acid that makes the substrate hydrophobic is supplied to the film formed on the peripheral portion of the rotating substrate to remove the film, and the first treatment on the substrate. The liquid is provided with a treatment liquid supply step of supplying a second treatment liquid for hydrophilizing the substrate.
A substrate processing method in which DIW is supplied to the peripheral portion of the substrate in the processing liquid supply step. The substrate treatment method according to any one of claims 1 to 5, wherein the second treatment liquid contains SC1. When executed by a computer for controlling the operation of the substrate processing apparatus, the computer controls the substrate processing apparatus to execute the substrate processing method according to any one of claims 1 to 6. A storage medium on which the program is recorded. A substrate processing device that removes the film formed on the peripheral edge of the substrate.
A holding part that holds the board horizontally,
A rotary drive unit that rotates the holding unit, and
A first treatment liquid supply including a first treatment liquid nozzle for supplying a first treatment liquid containing hydrofluoric acid that makes the substrate hydrophobic to the membrane formed on the peripheral portion of the substrate held by the holding portion. Department and
A second treatment liquid supply unit including a second treatment liquid nozzle for supplying the second treatment liquid for hydrophilizing the substrate to the first treatment liquid on the substrate.
With a control unit,
The control unit drives the rotation drive unit to start rotation of the substrate held by the holding unit, and then supplies the rotating substrate with the first treatment liquid from the first treatment liquid nozzle. so as to supply the second treatment liquid from the second processing liquid nozzle, the rotation driving unit to control the first processing liquid supply unit and the second processing liquid supply unit,
The supply position of the second treatment liquid from the second treatment liquid nozzle to the substrate is closer to the center of the substrate than the supply position of the first treatment liquid from the first treatment liquid nozzle to the substrate. Board processing equipment. The control unit starts supplying the second treatment liquid from the second treatment liquid nozzle to the substrate, and then supplies the first treatment liquid from the first treatment liquid nozzle to the substrate. The substrate processing apparatus according to claim 8, which controls the first processing liquid supply unit and the second treatment liquid supply unit. A substrate processing device that removes the film formed on the peripheral edge of the substrate.
A holding part that holds the board horizontally,
A rotary drive unit that rotates the holding unit, and
A first treatment liquid supply including a first treatment liquid nozzle for supplying a first treatment liquid containing hydrofluoric acid that makes the substrate hydrophobic to the membrane formed on the peripheral portion of the substrate held by the holding portion. Department and
A second treatment liquid supply unit including a second treatment liquid nozzle for supplying the second treatment liquid for hydrophilizing the substrate to the first treatment liquid on the substrate.
With a control unit,
The control unit drives the rotation drive unit to start rotation of the substrate held by the holding unit, and then supplies the rotating substrate with the first treatment liquid from the first treatment liquid nozzle. The rotation drive unit, the first treatment liquid supply unit, and the second treatment liquid supply unit are controlled so that the second treatment liquid is supplied from the second treatment liquid nozzle.
The control unit starts supplying the second treatment liquid from the second treatment liquid nozzle to the substrate, and then supplies the first treatment liquid from the first treatment liquid nozzle to the substrate. A substrate processing apparatus that controls the first processing liquid supply unit and the second treatment liquid supply unit. The control unit ends the supply of the first treatment liquid from the first treatment liquid nozzle to the substrate, and then ends the supply of the second treatment liquid from the second treatment liquid nozzle to the substrate. The substrate processing apparatus according to any one of claims 8 to 10, further controlling the first processing liquid supply unit and the second treatment liquid supply unit. A first processing liquid nozzle driving unit that advances and retracts the first processing liquid nozzle between a first advancing position for supplying the first processing liquid to the substrate and a first retracting position retracted from the substrate.
A second processing liquid nozzle driving unit that advances and retracts the second processing liquid nozzle between a second advancing position for supplying the second processing liquid to the substrate and a second retracting position retracted from the substrate. Further preparation,
The control unit advances the second treatment liquid nozzle to the second forward position while discharging the second treatment liquid, and then discharges the first treatment liquid to the first treatment liquid nozzle. 8. To claim, the first processing liquid supply unit, the second treatment liquid supply unit, the first treatment liquid nozzle drive unit, and the second treatment liquid nozzle drive unit are controlled so as to advance to one forward position. 11. The substrate processing apparatus according to any one of items 11. A substrate processing device that removes the film formed on the peripheral edge of the substrate.
A holding part that holds the board horizontally,
A rotary drive unit that rotates the holding unit, and
A first treatment liquid supply including a first treatment liquid nozzle for supplying a first treatment liquid containing hydrofluoric acid that makes the substrate hydrophobic to the membrane formed on the peripheral portion of the substrate held by the holding portion. Department and
A second treatment liquid supply unit including a second treatment liquid nozzle for supplying the second treatment liquid for hydrophilizing the substrate to the first treatment liquid on the substrate.
With a control unit,
The control unit drives the rotation drive unit to start rotation of the substrate held by the holding unit, and then supplies the rotating substrate with the first treatment liquid from the first treatment liquid nozzle. The rotation drive unit, the first treatment liquid supply unit, and the second treatment liquid supply unit are controlled so that the second treatment liquid is supplied from the second treatment liquid nozzle.
The substrate processing apparatus is
A first processing liquid nozzle driving unit that advances and retracts the first processing liquid nozzle between a first advancing position for supplying the first processing liquid to the substrate and a first retracting position retracted from the substrate.
A second processing liquid nozzle driving unit that advances and retracts the second processing liquid nozzle between a second advancing position for supplying the second processing liquid to the substrate and a second retracting position retracted from the substrate. Further preparation,
The control unit advances the second treatment liquid nozzle to the second forward position while discharging the second treatment liquid, and then discharges the first treatment liquid to the first treatment liquid nozzle. A substrate processing apparatus that controls the first treatment liquid supply unit, the second treatment liquid supply unit, the first treatment liquid nozzle drive unit, and the second treatment liquid nozzle drive unit so as to advance to one forward position. The control unit retracts the first treatment liquid nozzle to the first retracting position while discharging the first treatment liquid, and then discharges the second treatment liquid to the second treatment liquid nozzle. 2. Claim 12 or claim 12, which controls the first treatment liquid supply unit, the second treatment liquid supply unit, the first treatment liquid nozzle drive unit, and the second treatment liquid nozzle drive unit so as to retreat to the retracted position. 13. The substrate processing apparatus according to 13. The substrate processing apparatus according to any one of claims 8 to 14 , further comprising a DIW supply unit including a DIW nozzle for supplying DIW to the peripheral portion of the substrate held by the holding unit.

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