JP6969291B2 - Insulation material compositions, insulation layers and organic transistors - Google Patents

Description

The present invention relates to a composition for an insulating material, an insulating layer and an organic transistor, and more particularly to a composition for an insulating material and an insulating layer suitable as a gate insulating layer for an organic transistor.

Organic semiconductor devices represented by organic transistors have been attracting attention in recent years because they have features that are not found in inorganic semiconductor devices, such as energy saving, low cost, and flexibility. This organic semiconductor device is composed of several kinds of materials such as an organic semiconductor layer, a substrate, an insulating layer, and an electrode. Among these, the insulating layer has a great influence not only on the insulating property but also on the performance of the organic semiconductor device, so that various properties are required.

For example, the polymer insulating layer used for the gate insulating layer and the flattening layer of an organic transistor is required to have high dielectric breakdown strength, low leakage current, and solvent resistance to various organic solvents.

As a technique for meeting the above requirements, a technique for cross-linking a polymer insulating layer formed into a solution film is known (see, for example, Patent Document 1). When the cross-linking technique described in Patent Document 1 is used, the resin used must have solubility in a general-purpose organic solvent before cross-linking and cross-linking property to develop solvent resistance after cross-linking, and after cross-linking. (The state of the insulating layer) needs to have high insulation breaking strength, low leakage current, and solvent resistance to various organic solvents.

As a specific resin when the cross-linking technique is used, for example, a benzocyclobutene-based resin and a polyvinylphenol-based resin are known. However, the benzocyclobutene-based resin has a high cross-linking temperature of 250 ° C., and when a plastic is used as a base material, the base material undergoes thermal deformation, which makes it difficult to use, and the curing time is long, which is inferior in economy. Met. Since the polyvinyl phenol-based resin uses a melamine resin or the like as a cross-linking agent and requires a long-term curing reaction at a temperature of around 150 ° C., there is a problem that it is extremely difficult to apply it to the roll-to-roll process. Further, in the polyvinyl phenol-based resin, the hydroxyl group in the resin does not completely disappear, and the high leakage current presumed to be caused by the additive and the hydrophilicity due to the remaining hydroxyl group is also a problem.

Further, as a polymer insulating layer used for a gate insulating layer and a flattening layer of an organic transistor, a type of polymer that does not require cross-linking is also known. As such a polymer, the use of a fluorocyclic ether resin, a polyparaxylylene resin and the like has been proposed (see, for example, Patent Document 2). Since the fluorocyclic ether resin does not dissolve in a general-purpose organic solvent after film formation, it has the advantage of being insoluble in a general-purpose solvent even when it is not crosslinked. Poorly, there were also major restrictions on the substrate that could be coated or printed. Further, there is a problem that pinholes are easily formed due to poor wettability and the leakage current is high. Polyparaxylylene resin has the advantage that it does not dissolve in general-purpose solvents because monomers are vapor-deposited on a substrate by a vacuum vapor deposition method and polymerized on the substrate to form a film, but it is suitable for printing processes and roll-to-roll processes. It has a fatal defect that it cannot be dealt with.

On the other hand, it is known that the fumaric acid ester resin can be used as a material for a transparent insulating film and a resin composition for a transparent insulating film (see, for example, Patent Documents 3 and 4). However, in the transparent insulating film material of Patent Document 3, the transparent insulating film obtained by using the transparent insulating film material has a problem in solvent resistance. Further, when a transparent insulating film is obtained by using the resin composition for a transparent insulating film of Patent Document 4, although the transparent insulating film has high solvent resistance, an acid is generated by the decomposition reaction of the reaction initiator at the time of film production. There was a problem in application as a gate insulating layer and a flattening layer for organic transistors.

As described above, the polymers used for the conventionally known polymer insulating layer have some problems. In particular, when the polymer insulating layer is manufactured using cross-linking technology, the process compatibility is good due to the configuration of the organic transistor, but in order to further simplify the manufacturing process, low temperature and short time curability are required. Also, an excellent crosslinkable resin was required.

Japanese Unexamined Patent Publication No. 09-270445 Japanese Unexamined Patent Publication No. 11-67906 Japanese Unexamined Patent Publication No. 2015-109157 Japanese Unexamined Patent Publication No. 2015-129264

The present invention has been made in view of the above problems, and an object thereof is excellent in solubility in a general-purpose solvent, low-temperature / short-time curability, and solvent resistance, and as a gate insulating layer and a flattening layer. It is an object of the present invention to provide a composition for an insulating material having applicable insulating performance, an insulating layer, and an organic transistor having the insulating layer.

As a result of diligent studies on the above problems, the present inventors have made a composition for an insulating material containing a specific fumaric acid ester resin, a crosslinkable compound, and an insulating layer formed by using the composition for the insulating material. Found to solve the above-mentioned problems, and completed the present invention.

That is, the present invention contains fumaric acid containing 1 to 99 mol% of the fumaric acid diester residue unit represented by the following general formula (1) and 1 to 99 mol% of the residue unit represented by the following general formula (2). A composition for an insulating material containing an ester resin and a crosslinkable compound.

(Here, R ¹ and R ² are independently an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, and an alkynyl group having 2 to 20 carbon atoms, respectively. Or it indicates a substituted silyl group.)

(Here, R ³ is an independently hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, and the like. Substitutable silyl group, halogen atom, cyano group, -C (O) OR ⁴ group, or substituent represented by the following general formula (3), R ⁴ is an alkyl group having 1 to 20 carbon atoms and 4 carbon atoms. 20 aryl group, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms or a substituted silyl group, a substituted group at least one of ^{R 3} are represented by the general formula (3), Is.)

(Where, E is -OH group, -SH group, -NHR ⁵ group, .L showing an -NCO group or an epoxy group, an oxygen atom, a sulfur atom, ^-CR 6 ^{R 7} - group, substituted phenylene group, a carbonyl Group or −NR ⁸ − group, R ^{5 to} R ⁸ are independent hydrogen atoms, alkyl groups having 1 to 20 carbon atoms, aryl groups having 4 to 20 carbon atoms, and alkenyl groups having 2 to 20 carbon atoms, respectively. , An alkynyl group having 2 to 20 carbon atoms, or a substituted silyl group. N represents an integer of 0 to 20, and when n is 2 or more, L may be the same or different from each other.)
Hereinafter, the present invention will be described in detail.

The composition for an insulating material of the present invention contains a specific fumaric acid ester-based resin and a crosslinkable compound. The composition for an insulating material of the present invention is excellent in solubility in a general-purpose solvent, low-temperature / short-time curing property, and solvent resistance, and has insulating performance applicable as a gate insulating layer and a flattening layer. It is characterized by that. In the present invention, since it is suitable for developing the solvent resistance of the film (insulating layer) and improving the heat resistance of the film (insulating layer) in a short time, the fumaric acid ester resin has 60 to 98% by weight and crosslinkability. A composition for an insulating material containing 2 to 40% by weight of the compound is preferable.

The fumaric acid ester-based resin of the present invention has a fumaric acid diester residue unit represented by the following general formula (1) of 1 to 99 mol% and a residue unit represented by the following general formula (2) of 1 to 99 mol%. It is a fumaric acid ester-based resin containing and. In the present invention, the fumaric acid ester-based resin has a fumaric acid diester residue unit represented by the general formula (1) of 1 to 99 mol% and a residue unit represented by the following general formula (2) of 1 to 99 mol%. Since the resin contains the above, the composition for an insulating material has excellent solubility in a general-purpose solvent, and the film (insulating layer) has excellent solvent resistance. In the present invention, when the residue unit represented by the following general formula (2) is less than 1 mol%, the reaction with the crosslinkable compound is difficult to proceed, and a film (insulating layer) having sufficient solvent resistance is provided. It becomes difficult to obtain. Further, when the residue unit represented by the following general formula (2) exceeds 99 mol%, the solubility in a general-purpose solvent decreases. In the present invention, since it is a fumaric acid ester-based resin having excellent heat resistance, it is represented by the following general formula (2) with a fumaric acid diester residue unit represented by the following general formula (1) of 50 to 95 mol%. A fumaric acid ester-based resin containing 5 to 50 mol% of a residue unit is preferable, and a fumaric acid diester residue unit represented by the following general formula (1) is represented by 60 to 95 mol% and the following general formula (2). A fumaric acid ester-based resin containing 5 to 40 mol% of the residue unit to be formed is particularly preferable.

(Here, R ¹ and R ² are independently an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, and an alkynyl group having 2 to 20 carbon atoms, respectively. Or it indicates a substituted silyl group.)

(Here, R ³ is an independently hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, and the like. Substitutable silyl group, halogen atom, cyano group, -C (O) OR ⁴ group, or substituent represented by the following general formula (3), R ⁴ is an alkyl group having 1 to 20 carbon atoms and 4 carbon atoms. 20 aryl group, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms or a substituted silyl group, a substituted group at least one of ^{R 3} are represented by the general formula (3), Is.)

(Where, E is -OH group, -SH group, -NHR ⁵ group, .L showing an -NCO group or an epoxy group, an oxygen atom, a sulfur atom, ^-CR 6 ^{R 7} - group, substituted phenylene group, a carbonyl Group or −NR ⁸ − group, R ^{5 to} R ⁸ are independent hydrogen atoms, alkyl groups having 1 to 20 carbon atoms, aryl groups having 4 to 20 carbon atoms, and alkenyl groups having 2 to 20 carbon atoms, respectively. , An alkynyl group having 2 to 20 carbon atoms, or a substituted silyl group. N represents an integer of 0 to 20, and when n is 2 or more, L may be the same or different from each other.)
In the general formula (1), R ¹ and R ² independently have an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, and 2 to 20 carbon atoms. Indicates an alkynyl group or a substituted silyl group.

^{The alkyl group having 1 to 20 carbon atoms in R 1} and R ² in the general formula (1) is not particularly limited, and is, for example, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, or isobutyl. Group, s-butyl group, t-butyl group, n-pentyl group, s-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl Group, n-dodecyl group, n-tridecyl group, n-tetradecyl group, n-pentadecyl group, n-hexadecyl group, n-heptadecyl group, n-octadecyl group, n-nonadecil group, n-icosyl group, 2-ethylhexyl Linear alkyl groups such as groups or branched alkyl groups; cyclic alkyl groups such as cyclopropyl group, cyclopentyl group, cyclohexyl group and the like can be mentioned.

^{Further, the alkyl group having 1 to 20 carbon atoms in R 1} and R ² in the general formula (1) has a substituent such as a phenyl group, a halogen atom, a cyano group, an alkoxy group, an alkylthio group and a dialkylamino group. Also often, for example, benzyl group, diphenylmethyl group, trityl group, 2-chloroethyl group, 2-cyanoethyl group, methoxymethyl group, 2-methoxyethyl group, 2- (dimethylamino) ethyl group, 2- (diethylamino) ethyl. Examples thereof include a group, a 2- (trimethylsilyloxy) ethyl group, a 2- (triethylsilyloxy) ethyl group and the like.

^{The aryl group having 4 to 20 carbon atoms in R 1} and R ² in the general formula (1) is not particularly limited, and examples thereof include a phenyl group, a naphthyl group, and a phenanthryl group.

^{Further, in the aryl group having 4 to 20 carbon atoms in R 1} and R ² in the general formula (1), some of the carbon atoms constituting the aromatic ring are atoms other than carbon atoms such as oxygen atom, sulfur atom and nitrogen atom. It may be replaced with, for example, a furanyl group, a thienyl group, a pyrrolyl group, a pyridyl group and the like.

^{The alkenyl group having 2 to 20 carbon atoms in R 1} and R ² in the general formula (1) is not particularly limited, and examples thereof include an ethenyl group, a propenyl group, a butenyl group, and a pentenyl group.

^{The alkynyl group having 2 to 20 carbon atoms in R 1} and R ² in the general formula (1) is not particularly limited, and examples thereof include an ethynyl group, a propynyl group, a butynyl group, and a pentynyl group.

^{The substituted silyl group in R 1} and R ² in the general formula (1) is not particularly limited, and examples thereof include a trimethylsilyl group, a triethylsilyl group, a triisopropylsilyl group, and a t-butyldimethylsilyl group.

In the general formula (2), R ³ independently has a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, and 2 to 20 carbon atoms. alkynyl group, a substituted silyl group, a halogen atom, a cyano group, -C (O) represents a substituent represented by oR ⁴ group, or the general formula, (3), ^{R 4} is an alkyl group having 1 to 20 carbon atoms, carbon An aryl group having a number of 4 to 20, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, or a substituted silyl group is shown. Further, ^{at least one of R 3} is a substituent represented by the general formula (3), and if ^{at least one of R 3} is not a substituent represented by the general formula (3), crosslinking cannot be performed. The obtained insulating layer is inferior in solvent resistance.

Alkyl group having 1 to 20 carbon atoms, aryl group having 4 to 20 carbon atoms, alkenyl group having 2 to 20 carbon atoms, alkynyl group having 2 to 20 carbon atoms, substitution in ^{R 3} and R ⁴ in the general formula (2). Examples of the silyl group include substituents similar to ^{R 1} and R ² in the general formula (1), respectively.

As the halogen atom in R ³ in the general formula (2), for example, chlorine, bromine, and iodine.

In the general formula (3), E represents an -OH group, a -SH group, an -NHR ⁵ group, an -NCO group, or an epoxy group. L represents an oxygen atom, a sulfur atom, ^-CR 6 ^{R 7} - group, substituted phenylene group, a carbonyl group, or -NR ^8, - represents a ^group, each R 5 to R ⁸ are independently hydrogen, C 1 -C 20 Alkyl group, aryl group having 4 to 20 carbon atoms, alkenyl group having 2 to 20 carbon atoms, alkynyl group having 2 to 20 carbon atoms, or substituted silyl group. n represents an integer from 0 to 20, and when n is 2 or more, L may be the same or different from each other.

Formula (3) an alkyl group having 1 to 20 carbon atoms in ^R 5 to R ⁸ in the aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, a substituted Examples of the silyl group include substituents similar to those of ^{R 1} and R ² in the general formula (1).

Examples of the fumaric acid diester residue unit represented by the general formula (1) constituting the fumaric acid ester resin include dimethyl fumarate residue, diethyl fumarate residue, dipropyl fumarate residue, and diisopropyl fumarate residue. Group, din-butyl fumarate residue, diisobutyl fumarate residue, di-s-butyl fumarate residue, di-t-butyl fumarate residue, din-pentyl fumarate residue, di-fumarate s-pentyl residue, din-hexyl fumarate residue, din-heptyl fumarate residue, din-octyl fumarate residue, din-nonyl fumarate residue, din-decyl fumarate residue , Di n-undecyl fumarate residue, di n-dodecyl fumarate residue, di n-tridecyl fumarate residue, di n-tetradecyl fumarate residue, di n-pentadecyl fumarate residue, di n fumarate -Hexadecyl residue, din-heptadecyl fumarate residue, din-octadecyl fumarate residue, din-nonadesyl fumarate residue, din-icosyl fumarate residue, bis fumarate (2-ethylhexyl) residue Fumaric acid diester residues with linear or branched alkyl groups such as groups; fumaric acid with cyclic alkyl groups such as dicyclopropyl fumarate residues, dicyclopentyl fumarate residues, dicyclohexyl fumarate residues. Diester residues; fumaric acid diester residues having an aryl group such as diphenyl fumarate residue, dinaphthyl fumarate residue, diphenanthril fumarate residue; bis fumarate (2-furanyl), bis fumarate (3-thienyl) , Fumarate diester residue having an aryl group in which a carbon atom such as bis fumarate (3-pyrrylyl), bis fumarate (3-pyridyl) is replaced with another atom; diethenyl fumarate residue, dipropenyl fumarate residue Fumarate diester residues having an alkenyl group such as a group, dibutenyl fumarate residue, dipentenyl fumarate residue; diethynyl fumarate residue, dipropynyl fumarate residue, dibutynyl fumarate residue, dipentynyl fumarate residue, etc. Fumaric acid diester residues having an alkynyl group; fumaric acid diester residues having a substituted silyl group such as bis fumarate (trimethylsilyl) can be mentioned, and among them, a resin having high heat resistance can be obtained. Residues, diisopropyl fumarate residues, di-s-butyl fumarate residues, di-t-butyl fumarate residues, dicyclopentyl fumarate residues, dicyclohexyl fumarate residues are preferred, and diethyl fumarate residues. , Diisopropyl fumarate residue is more preferred.

Further, as the residue unit represented by the general formula (2) constituting the fumaric acid ester resin, more specifically, the residue unit represented by the following general formula (4) and the following general formula (5) is used. Can be mentioned.

(Here, R ⁹ is an independent hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, and an alkynyl group having 2 to 20 carbon atoms. Substituted silyl group, cyano group, or -C (O) OR ¹⁰ group, R ¹⁰ is a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, and an alkenyl having 2 to 20 carbon atoms. A group, an alkynyl group having 2 to 20 carbon atoms, or a substituted silyl group, L and E are the same as L and E in the general formula (3), m represents an integer of 0 to 19, and m is 2. In the above case, L may be the same as or different from each other.)

(Here, R ¹¹ indicates an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, or a substituted silyl group. E'is an -OH group, an -SH group, an -COOH group, or -NHR ^12. group, -NCO group or an epoxy group .L 'is a direct ^{bond,, -CR} 13 ^{R 14} - group, a substituted phenylene group or ^{-NR 15,} - represents a ^group, R 12 ^{to R 15} are each independently a hydrogen An atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, or a substituted silyl group.)
In the general formula (4), R ⁹ independently has a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, and 2 to 20 carbon atoms. It represents an alkynyl group, a substituted silyl group, a cyano group, or -C (O) OR ¹⁰ groups, where R ¹⁰ is a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, and 2 to 2 carbon atoms. It represents an alkenyl group of 20, an alkynyl group having 2 to 20 carbon atoms, or a substituted silyl group, where L and E are the same as L and E in the general formula (3), and m indicates an integer of 0 to 19. When m is 2 or more, L may be the same as or different from each other.

Formula (4) an alkyl group having 1 to 20 carbon atoms in ^{R 9} in, aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, a substituted silyl group Examples of the same substituents as ^{R 1} and R ² in the general formula (1), respectively.

In the general formula (5), R ¹¹ represents an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, or a substituted silyl group. E'indicates a -OH group, a -SH group, a -COOH group, an -NHR ¹² group, a -NCO group, or an epoxy group. L 'is a direct ^{bond, -CR} 13 ^{R 14} - group, a substituted phenylene group or ^{-NR 15,} - represents a ^group, R 12 ^{to R 15} are each independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, carbon An aryl group having a number of 4 to 20, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, or a substituted silyl group is shown.

The alkyl group having 1 to 20 carbon atoms, the aryl group having 4 to 20 carbon atoms, and the substituted silyl group in ^{R 11} in the general formula (5) ^{are the same as those in R 1} and R ² in the general formula (1), respectively. Substituents can be mentioned.

Alkyl group having 1 to 20 carbon atoms, aryl group having 4 to 20 carbon atoms, alkenyl group having 2 to 20 carbon atoms, alkynyl group having 2 to 20 carbon atoms, substitution in ^{R 12 to} R ¹⁵ in the general formula (5). Examples of the silyl group include substituents similar to those of ^{R 1} and R ² in the general formula (1).

Examples of the residue unit represented by the general formula (5) include allyl alcohol residue, 4-penten-1-ol residue, cinnamyl alcohol residue, allylamine residue, 3-butenoic acid, and crotonic acid residue. Examples include groups, 4-pentenoic acid residues, cinnamic acid residues, crotonamide residues, cinnamamide residues, allyl mercaptan residues and the like.

More specifically, the residue unit represented by the general formula (4) includes the residue unit represented by the following general formula (6) and the following general formula (7).

(Here, R ¹⁶ indicates a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, or a substituted silyl group.)

(Here, R ¹⁷ represents a hydrogen or a methyl group, and L, E, and m are the same as L, E, and m in the general formula (4).)
In the general formula (6), R ¹⁶ represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, or a substituted silyl group. Examples of the alkyl group having 1 to 20 carbon atoms and the aryl group having 4 to 20 carbon atoms ^{in R 16} in the general formula (6) include substituents similar to those in ^{R 1} and R ^{2 in the general formula (1), respectively.} Be done.

In the general formula (7), R ¹⁷ represents a hydrogen or a methyl group, and L, E and m are the same as L, E and m in the general formula (4).

Examples of the residue unit represented by the general formula (6) include a fumarate residue, a monomethyl fumarate residue, a monoethyl fumarate residue, a monopropyl fumarate residue, a monoisopropyl fumarate residue, and a fumarate. Mono n-butyl residue, monoisobutyl fumarate residue, mono s-butyl fumarate residue, mono t-butyl fumarate residue, mono n-pentyl fumarate residue, mono s-pentyl fumarate residue, Examples thereof include fumarate monoester residues such as fumarate monocyclopropyl residue, fumarate monocyclopentyl residue, and fumarate monocyclohexyl residue.

Examples of the residue unit represented by the general formula (7) include (meth) acrylic acid residue, (meth) acrylamide residue, (meth) acrylic acid 2-hydroxyethyl residue, and ω-carboxy-polycaprolactone. Examples thereof include (meth) acrylic acid ester residues such as monomethacrylate residues, methoxytriethylene glycol methacrylate residues, 2-isocyanatoethyl acrylate residues, and glycidyl (meth) acrylate residues.

Since it is a fumaric acid ester-based resin having high heat resistance among the residue units represented by the general formulas (5) to (7), monomethyl fumarate residue, monoethyl fumarate residue, and monopropyl fumarate residue , Monoisopropyl fumarate residues are preferred.

The fumaric acid ester-based resin of the present invention may contain other monomer residue units as long as it does not deviate from the object of the present invention, and examples of the other monomer residue units include styrene. Styrene residues such as residues, α-methylstyrene residues; Acrylic ester residues such as methyl acrylate residues, ethyl acrylate residues, butyl acrylate residues; methyl methacrylate residues, methacrylic acid Methyl ester residues such as ethyl residues and butyl methacrylate residues; Vinyl ester residues such as vinyl acetate residues and vinyl propionate residues; Olefin residues such as ethylene residues and propylene residues Can be mentioned.

There is no limitation on the molecular weight of the fumaric acid ester resin used in the present invention, and the standard polystyrene-equivalent number average molecular weight (Mn) obtained from the elution curve measured by gel permeation chromatography (GPC) is 1. Those of 1,000 to 1,000,000 can be used. It is preferably 5,000 to 300,000, and more preferably 5,000 to 200,000 because an insulating layer having excellent film forming property and curable property can be obtained.

The composition for an insulating material of the present invention contains a crosslinkable compound. In the present invention, when the crosslinkable compound is not contained, the insulating layer having solvent resistance is not formed. Here, in the present invention, the crosslinkable compound has a functional group capable of crosslinking with the substituent represented by the general formula (3) in the fumaric acid ester-based resin of the present invention, and is soluble in a general-purpose solvent. It has.

In the present invention, from the viewpoint of storage stability, the functional group that can be crosslinked with the substituent represented by the general formula (3) is crosslinked with the substituent represented by the general formula (3) by heating at 50 ° C. or higher. It is preferably a functional group to be obtained (not crosslinked below 50 ° C.).

Since the obtained insulating layer exhibits more excellent solvent resistance, the crosslinkable compound of the present invention preferably contains two or more functional groups capable of crosslinking with the substituent represented by the general formula (3). ..

Specific crosslinkable compounds of the present invention include polyfunctional alcohols, polyfunctional amines, polyfunctional carboxylic acids, polyfunctional isocyanate compounds, polyfunctional epoxy compounds, polyfunctional oxazoline compounds, and polyfunctional aziridines. Examples thereof include compounds, polyfunctional carbodiimide compounds, and polyfunctional alkoxysilane compounds.

Among the specific crosslinkable compounds of the present invention, examples of the polyfunctional alcohol include ethylene glycol, 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, and 1,6-hexane. Linear diols such as diols, 1,7-heptanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol; propylene glycol, 1-ethyl-1,2-ethanediol, 2 -Side chain alkyl group-containing diols such as 2-methyl-1,3-propanediol 2-methyl-1,4-butanediol, 2-ethyl-1,5-pentanediol, 3-methyl-1,6-hexanediol; Alicyclic diols such as 1,4-cyclohexanediol, 1,4-cyclohexanedimethanol, 1,5-cyclooctanedimethanol; resorcin, catechol, bisphenol A, 1,2-hydroxybenzene, 1,3-hydroxybenzene. , 1,4-Hexanediol, 1,4-benzenedimethanol, 1,4-bis (β-hydroxyethoxy) benzene and other aromatic diols; trimethylolpropane, glycerin, 1,2,6-hexanetriol, penta Examples thereof include polyhydric alcohols such as erythritol.

Among the specific crosslinkable compounds of the present invention, examples of the polyfunctional amine include ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, diaminodicyclohexylmethane, metaphenylenediamine, diaminodiphenylmethane and the like.

Among the specific crosslinkable compounds of the present invention, examples of the polyfunctional carboxylic acid include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid and phthalic acid. Dicarboxylic acids such as acids, isophthalic acids, terephthalic acids, naphthalene-2,6-dicarboxylic acids; butane-1,2,4-tricarboxylic acids, hexane-2,3,5-tricarboxylic acids, benzene-1,2,3 -Tricarboxylic acids such as tricarboxylic acid, benzene-1,2,4-tricarboxylic acid, benzene-1,3,5-tricarboxylic acid, naphthalene-1,2,4-tricarboxylic acid; 1,2,3,4-butane; Tetracarboxylic acid, cyclohexane-1,2,4,5-tetracarboxylic acid, benzene-1,2,3,4-tetracarboxylic acid, benzene-1,2,3,5-tetracarboxylic acid, benzene-1, Examples thereof include tetracarboxylic acids such as 2,4,5-tetracarboxylic acid and naphthalene-1,4,5,8-tetracarboxylic acid.

Among the specific crosslinkable compounds of the present invention, examples of the polyfunctional isocyanate compound include aromatic polyisocyanates such as toluene diisocyanate, naphthalenedi isocyanate and diphenylmethane diisocyanate; propylene diisocyanate, butylene diisocyanate, pentamethylene diisocyanate and hexamethylene diisocyanate. Such as aliphatic polyisocyanate; alicyclic polyisocyanate such as cyclohexane diisocyanate, methylene bis (cyclohexyl isocyanate), transcyclohexane-1,4-diisocyanate, isophorone diisocyanate and the like can be mentioned.

Among the specific crosslinkable compounds of the present invention, examples of the polyfunctional epoxy compound include 1,4-butanediol diglycidyl ether, ethylene glycol diglycidyl ether, and 9,9-bis (4-glycidyloxyphenyl). Fluolen, Bisphenol A Diglycidyl Ether, Bisphenol F Diglycidyl Ether, 2-{[(1-{[2- (2-oxylanylmethoxy) -1-naphthyl] methyl} -2-naphthyl) oxy] methyl} oxylan , Tris (4-hydroxyphenyl) methanetris glycidyl ether, 1-chloro-2,3-epoxypropane, 2,7-naphthalenediol, formaldehyde polycondensate, poly (phenylglycidyl ether) -co-dicyclopentadiene, etc. Glycidyl ether type; Glygidyl ester type epoxy compound such as diglycidyl phthalate and diglycidyl hexahydrophthalate; Glygidylamine type epoxy compound such as tetraglycidyl diaminodiphenylmethane; 3', 4'-epoxycyclohexylmethyl (3,4-epoxy) ) Cyclic aliphatic compounds such as cyclohexanecarboxylate, ε-caprolactone modified 3', 4'-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate, tetra (3,4-epoxycyclohexylmethyl) modified ε-caprolactone. Epoxy compounds; triglycidyl isocyanurate, 1,3,5-tris (4,5-epoxypentyl) -1,3,5-triazine-2,4,6 (1H, 3H, 5H) -trione, 1, 3,5-Tris [Trimethylol propanediglycidyl ether mono (1-yl-propionate)]-1,3,5-triazine-2,4,6 (1H, 3H, 5H) -Trione and other heterocyclic formulas Examples include epoxy compounds.

Among the specific crosslinkable compounds of the present invention, examples of the polyfunctional oxazoline compound include 1,2-bis (2-oxazoline-2-yl) ethane and 1,4-bis (2-oxazoline-2-). Il) Butane, 1,6-bis (2-oxazoline-2-yl) hexane, 1,8-bis (2-oxazoline-2-yl) octane, 1,4-bis (2-oxazoline-2-yl) Cyclohexane, 1,3-bis (4,5-dihydro-2-oxazoline) benzene, 1,4-bis (4,5-dihydro-2-oxazoline) benzene, 2,2'-bis (2-oxazoline), etc. Can be mentioned.

Among the specific crosslinkable compounds of the present invention, examples of the polyfunctional aziridine compound include 1,1'-hexamethylenebis (iminocarbonyl) bisaziridine, tri (1-aziridinyl) phosphine sulfide and the like.

Among the specific crosslinkable compounds of the present invention, examples of the polyfunctional carbodiimide compound include N, N ″-(1,4-phenylene) biscarbodiimide, p-phenylene-bis-dicyclohexylcarbodiimide, and ethylene-bis-. Examples thereof include diphenylcarbodiimide, hexamethylene-bis-dicyclohexylcarbodiimide, poly (p-phenylene carbodiimide) and the like.

Among the specific crosslinkable compounds of the present invention, examples of the polyfunctional alkoxysilane compound include 1,2-bis (trimethoxysilyl) ethane, 1,2-bis (triethoxysilyl) ethane, and 1,6. -Bis (trimethoxysilyl) hexane, bis [2- (trimethoxysilyl) ethyl] benzene and the like can be mentioned.

Among the specific crosslinkable compounds of the present invention, a polyfunctional epoxy compound is preferable because it can carry out a curing (crosslinking) reaction in a short time, and bisphenol A diglycidyl ether, 1-chloro-2,3-epoxypropane. 2,7-Naphthalenediol-formaldehyde polycondensate, 1,3,5-tris [trimethylolpropane diglycidyl ether mono (1-yl-propionate)]-1,3,5-triazine-2,4 6 (1H, 3H, 5H) -trione is more preferred.

In the present invention, when the fumaric acid ester-based resin of the present invention and the crosslinkable compound are crosslinked by heating, an active hydrogen-containing group may be generated. The active hydrogen-containing group referred to here is a substituent having a hydrogen atom having a higher reactivity than a hydrogen atom bonded to a carbon atom, which is directly bonded to a nitrogen atom, an oxygen atom, a sulfur atom, etc. Examples of the hydrogen atom include a hydrogen atom in a hydroxyl group, a carboxyl group, an amino group, an amide group and the like. In the present invention, by further adding a silane compound in addition to the fumaric acid ester resin and the crosslinkable compound, the active hydrogen-containing group reacts with the silane compound to remove the active hydrogen, and the formed insulating layer is formed. The polar term of the surface energy can be controlled. Here, when the polar term of surface energy is reduced, when the insulating layer is used as an organic transistor (FET), hysteresis is less likely to occur in the current between the source and drain, and an organic transistor more excellent in practicality can be obtained. It becomes a thing.

When the composition for an insulating material in the present invention contains a silane compound, it exhibits solvent resistance in a short time and is particularly suitable for forming an insulating layer with controlled surface energy. Therefore, it is a fumaric acid ester-based resin. A composition for an insulating material containing 40 to 98% by weight, a crosslinkable compound of 1 to 30% by weight, and a silane compound of 1 to 30% by weight is preferable.

In the present invention, when a silane compound having a substituent capable of reacting with an active hydrogen-containing group is contained, the silane compound is not particularly limited, and for example, methyltrimethoxysilane, dimethyldimethoxysilane, phenyltrimethoxysilane, and the like. Methyltriethoxysilane, dimethyldiethoxysilane, phenyltriethoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, n-octyltrimethoxysilane, n-octyltriethoxysilane, n-decyltrimethoxysilane, trifluoropropyltrimethoxysilane, hexamethyldisilazane, N-trimethylsilylacetamide, N-methyl-N-trimethylsilylacetamide, N, O-bis (trimethylsilyl) acetamide, N, O-bis (trimethylsilyl) trifluoroacetamide, N, O-bis (trimethylsilyl) acetamide, N- (tert-butyldimethylsilyl) -N-methyltrifluoroacetamide, N-trimethylsilylimidazole, triisopropylsilanol, tert- Butyldimethylsilanol, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-Glysidoxypropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane , N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane and the like. Among them, phenyltrimethoxysilane, n-octyltrimethoxysilane, and n-decyltrimethoxysilane are preferable from the viewpoint of adjusting reactivity and surface energy.

The insulating layer of the present invention is made by using the composition for an insulating material of the present invention. Then, the insulating layer is formed by curing the composition for insulating material of the present invention (crosslinking of a substituent represented by the general formula (3) in a fumaric acid ester resin and a crosslinkable functional group in a crosslinkable compound). It is obtained, and the insulating layer is imparted with solvent resistance by the curing.

The insulating layer of the present invention can be obtained by using a resin solution (hereinafter referred to as a resin solution) containing the composition for an insulating material and an organic solvent according to the present invention, and for example, a resin solution is applied. And can be obtained by curing.

The organic solvent used in the present invention is not particularly limited, but for example, ethers such as dibutyl ether and diisobutyl ether; aromatic hydrocarbons such as toluene, xylene, cumene and mesitylen; chlorobenzene, dichlorobenzene, bromobenzene and the like. Halogenized aromatic hydrocarbons; Ketones such as methylisobutylketone, ethylisobutylketone, cyclopentanone, cyclohexanone; esters such as n-butyl acetate, isobutylacetate, propylpropionate, N-methylpyrrolidone, dimethylformamide And the like; glycols such as diethylene glycol butyl methyl ether, diethylene glycol dimethyl ether, diethylene glycol monobutyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol methyl ether acetate and the like, and fumaric acid ester-based resins and crosslinkable compounds are dissolved. As long as it is used alone or in combination with two or more kinds of solvents. Among them, an organic solvent having a boiling point of 100 ° C. or higher is preferable because an insulating layer having high uniformity can be obtained after coating and drying, and toluene and the like can be applied with a stable solution viscosity because of high solubility. Xylene, mesitylene, methyl isobutyl ketone, cyclohexanone, cyclopentanone, n-butyl acetate, N-methylpyrrolidone, diethylene glycol butyl methyl ether, and diethylene glycol monobutyl ether acetate are more preferred.

The content of the organic solvent is preferably 50 to 99 parts by weight, more preferably 70 to 97 parts by weight, based on 100 parts by weight of the resin solution, because it is suitable for a simple film forming method.

The solution viscosity of the resin solution is not particularly limited as long as it can be coated, but is preferably 1 to 10,000 mPa · s from the viewpoint of coatability of the insulating layer.

The thickness of the insulating layer of the present invention is preferably 0.05 to 10 μm from the viewpoint of insulating properties and suppressing residual organic solvent.

In the present invention, there is no particular limitation on the method of applying the resin solution to obtain the insulating layer, and the spin coating method, the dip coating method, the bar coating method, the die coating method, the gravure coating method, the dispenser method, the inkjet method, and the screen printing are not particularly limited. It can be performed by an appropriate method such as a method or a flexographic printing method.

There is no particular limitation on the drying method after applying the resin solution, but since it is suitable for drying organic solvents, it is exposed to hot air in a dryer or placed on a dryer, oven, or hot plate. , Preferably heated.

In the present invention, curing for imparting insulating properties can be performed by heating. The heating for curing may be carried out after drying, or may be carried out in combination with drying of an organic solvent.

In the present invention, the crosslinking time (deposition time) is preferably 60 minutes or less, more preferably 30 minutes or less, from the viewpoint of improving economic efficiency by shortening the process.

In the present invention, suitable curing is possible at a heating temperature of 50 ° C. or higher in crosslinking, but 120 ° C. to 200 ° C. is preferable in order to accelerate the curing reaction, and plastic can be used as a base material. 120 ° C to 150 ° C is more preferable.

The insulating layer of the present invention has excellent transparency, and the total light transmittance is preferably 90% or more, more preferably 92% or more. The haze of the insulating layer is preferably 1.0% or less, more preferably 0.5% or less.

The insulating layer of the present invention preferably has a surface energy polarity term of 11 mN / m or less in order to suppress current hysteresis between the source and drain of the organic transistor element.

The insulating layer of the present invention preferably has a dielectric breakdown strength of 4 MV / cm or more from the viewpoint of practicality as a gate insulating layer of an organic transistor element.

Other polymers, inorganic fillers, antioxidants, ultraviolet antioxidants, antistatic agents, antiblocking agents and the like may be added to the insulating layer of the present invention without exceeding the gist of the invention.

The insulating layer of the present invention can be suitably used as a gate insulating layer of an organic transistor. The organic transistor has a gate insulating layer on the substrate. Then, it is obtained by forming an organic semiconductor layer on this film and attaching a source electrode, a drain electrode and a gate electrode.

The insulating layer of the present invention can also be suitably used as a flattening layer for improving the smoothness of the substrate surface used for forming an organic transistor.

^{The flattening layer of the present invention preferably has an off current of 10-11} A or less from the viewpoint of practicality as a flattening layer of an organic transistor element.

The organic transistor of the present invention is of the bottom gate-top contact type (A), bottom gate-bottom contact type (B), top gate-top contact type (C), and top gate-bottom contact type (D) shown in FIG. Any element structure may be used. Here, 1 is an organic semiconductor layer, 2 is a substrate, 3 is a gate electrode, 4 is a gate insulating layer, 5 is a source electrode, and 6 is a drain electrode.

In the present invention, there is no limitation on the organic semiconductor used for the organic semiconductor layer of the organic transistor, and both N-type and P-type organic semiconductors can be used. Further, both small molecule and high molecular weight organic semiconductors can be used, and these can be mixed and used. Specific examples of the compound include formulas (F-1) to (F-11).

In the present invention, examples of the method for forming the organic semiconductor layer include a method of vacuum vapor deposition of an organic semiconductor, a method of dissolving an organic semiconductor in an organic solvent, coating and printing, and the like. There are no restrictions as long as it can be formed. The solution concentration when applying or printing using a solution in which an organic semiconductor layer is dissolved in an organic solvent varies depending on the structure of the organic semiconductor and the solvent used, but from the viewpoint of forming a more uniform semiconductor layer and reducing the thickness of the layer. Therefore, it is preferably 0.5% to 5% by weight. The organic solvent at this time is not limited as long as the organic semiconductor is dissolved at a certain concentration that can form a film, and is hexane, heptane, octane, decane, dodecane, tetradecane, decalin, indan, 1-methylnaphthalene, 2-ethyl. Naphthalene, 1,4-dimethylnaphthalene, dimethylnaphthalene isomer mixture, toluene, xylene, ethylbenzene, 1,2,4-trimethylbenzene, mecitylene, isopropylbenzene, pentylbenzene, hexylbenzene, tetraline, octylbenzene, cyclohexylbenzene, 1 , 2-Dichlorobenzene, 1,3-dichlorobenzene, 1,4-dichlorobenzene, trichlorobenzene, 1,2-dimethoxybenzene, 1,3-dimethoxybenzene, γ-butyrolactone, 1,3-butylene glycol, ethylene glycol , Benzene alcohol, glycerin, cyclohexanol acetate, 3-methoxybutyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, anisole, cyclohexanone, mesitylene, 3-methoxybutyl acetate, cyclohexanol acetate, Dipropylene glycol diacetate, dipropylene glycol methyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, 1,6-hexanediol diacetate, 1,3-butylene glycol diacetate, 1,4-butanediol diacetate , Ethylacetate, phenylacetate, dipropylene glycol dimethyl ether, dipropylene glycol methyl-N-propyl ether, tetradecahydrophenantrene, 1,2,3,4,5,6,7,8-octahydrophenantrene, decahydro-2 -Naftol, 1,2,3,4-tetrahydro-1-naphthol, α-terpineol, isophorontriacetindecahydro-2-naphthol, dipropylene glycol dimethyl ether, 2,6-dimethylanisole, 1,2-dimethylanisole, 2 , 3-Dimethylanisole, 3,4-dimethylanisole, 1-benzothiophene, 3-methylbenzothiophene, 1,2-dichloroethane, 1,1,2,2-tetrachloroethane, chloroform, dichloromethane, tetrahydrofuran , 1,2-Dimethoxyethane, dioxane, cyclohexanone, acetone, methyl ethyl ketone, diethyl ketone, diisopropyl ketone, acetophenone, N, N-dimethylformamide, N-methyl-2-pyrrolidone and the like. A solvent having a high dissolving power of an organic semiconductor and a boiling point of 100 ° C. or higher is suitable for obtaining, xylene, isopropylbenzene, anisole, cyclohexanone, mesitylene, 1,2-dichlorobenzene, 3,4-dimethylanisole, Pentylbenzene, tetraline, cyclohexanbenzene and decahydro-2-naphthol are preferred. Further, a mixed solvent in which two or more of the above-mentioned solvents are mixed at an appropriate ratio can also be used.

Various organic / inorganic polymers or oligomers, solid organic / inorganic nanoparticles, or a dispersion liquid in which the nanoparticles are dispersed in water or an organic solvent can be added to the organic semiconductor layer as needed. A protective film can be formed by applying a polymer solution on top. Further, various moisture-proof coatings, light-resistant coatings and the like can be applied on the protective film as needed.

Examples of the substrate include polyethylene terephthalate, polyethylene naphthalate, polymethylmethacrylate, polymethylacrylate, polyethylene, polypropylene, polypropylene, cyclic polyolefin, polyimide, polycarbonate, polyvinylphenol, polyvinyl alcohol, poly (diisopropylfumarate), and poly (diethyl). Fumarate), poly (diisopropylmaleate), polyethersulfone, polyphenylene sulfide, plastic substrates such as cellulose triacetate, glass, quartz, aluminum oxide, silicon, high-doped silicon, silicon oxide, tantalum dioxide, tantalum pentoxide, indium tin Examples thereof include inorganic substrates such as oxides and metal substrates such as gold, copper, chromium, titanium and aluminum.

Examples of the gate electrode include inorganic electrodes such as aluminum, gold, silver, copper, high-doped silicon, tin oxide, indium oxide, indium tin oxide, chromium, titanium, tantalum, graphene, and carbon nanotubes, or doped. Examples thereof include organic electrodes such as conductive polymers (for example, PEDOT-PSS).

As the source electrode and the drain electrode, the same electrodes as those exemplified for the gate electrode can be exemplified. Further, in order to improve the injection efficiency of the carrier, it is also possible to carry out surface treatment using a surface treatment agent on these electrodes. Examples of such a surface treatment agent include benzenethiol, pentafluorobenzenethiol and the like.

From the viewpoint of practicality of the organic transistor element, the organic transistor of the present invention ^{preferably has a leakage current density of 10-8} A / cm ² or less.

From the viewpoint of practicality of the organic transistor element, the organic transistor of the present invention ^{preferably has a mobility of 0.20 cm 2} / Vs or more.

From the viewpoint of practicality of the organic transistor element, the organic transistor of the present invention preferably has a threshold voltage of -20.0V or more and less than 0V.

Organic transistor of the present invention, from the viewpoint of practicality of the organic transistor device, it is preferable on current / off current ratio of 10 ⁵ or more.

From the viewpoint of practicality of the organic transistor element, the organic transistor of the present invention preferably does not show hysteresis in the current between the source and drain.

The organic transistor of the present invention can be suitably used for an electronic device. The electronic device has the organic transistor of the present invention, and examples thereof include display elements such as electronic paper and organic EL displays; electronic tags such as RFID tags; sensor elements such as image sensors, biosensors, and physical sensors. Can be mentioned.

According to the present invention, a composition for an insulating material having excellent solubility in a general-purpose solvent, low-temperature / short-time curability, and solvent resistance, and having insulating performance applicable as a gate insulating layer and a flattening layer, insulation. It is possible to provide a layer and an organic transistor having the insulating layer.

It is a figure which shows the structure by the cross-sectional shape of an organic thin film transistor.

Hereinafter, the present invention will be described with reference to Examples, but the present invention is not limited to these Examples.

The physical properties shown in the examples were measured by the following methods.

<Composition of fumaric acid ester resin>
^{It was obtained by proton nuclear magnetic resonance spectroscopy (1} H-NMR) spectral analysis using a nuclear magnetic resonance measuring device (manufactured by JEOL Ltd., trade name: JNM-GX270).

<Measurement of number average molecular weight>
It was determined as a standard polystyrene conversion value using gel permeation chromatography (GPC) (manufactured by Tosoh Corporation, trade name HLC-802A) using THF (tetrahydrofuran) as a solvent.

<Evaluation method of solvent resistance>
The substrate on which the insulating layer is formed is immersed in a solvent and evaluated by the residual film ratio obtained by dividing the thickness of the insulating layer after immersion in the solvent by the thickness before immersion. (Hereinafter, the operation is referred to as "solvent resistance test"). The film thickness was measured using a contact type surface profiler (manufactured by Bruker, trade name: Dektak XT-E). The test was carried out by immersing in n-butyl acetate for 1 minute.

<Evaluation method of surface energy>
An insulating layer was formed on the washed and dried glass, and the contact angle with respect to water and diiodomethane was measured by the θ / 2 method using a contact angle meter (manufactured by Kyowa Surface Chemistry Co., Ltd., trade name DM-300). Calculated using the Owens-Wendt method.
<Evaluation method of dielectric breakdown strength and leakage current density>
Silver was vacuum-deposited on a washed and dried 30 × 30 mm ² glass (Eagle XG manufactured by Corning Inc.) to form an electrode having a thickness of 30 nm. After that, an insulating layer is formed on the base material on which the electrode is formed, and the gold electrode is vacuum-deposited on the insulating layer using a vacuum vapor deposition apparatus (manufactured by ULVAC Kiko Co., Ltd., trade name: VTR-350M / ERH). A MIM capacitor having a three-layer structure of an insulating layer / metal was manufactured.

A voltage was applied between the silver and gold electrodes of the manufactured MIM capacitor, the voltage at which the current started to flow inside the insulating layer due to dielectric breakdown was measured, and the value divided by the thickness of the insulating layer was defined as the dielectric breakdown strength. Further, the value obtained by dividing the voltage by the thickness of the insulating layer was defined as the electric field strength, and the current value per electrode unit area at the electric field strength of 1 MV / cm was defined as the leakage current density.

<Evaluation method of organic transistor element>
Silver was vacuum-deposited on a washed and dried 30 × 30 mm ² glass (Eagle XG manufactured by Corning Inc.) to form an electrode having a thickness of 30 nm. After forming an insulating layer on the base material on which the electrodes were formed, an organic semiconductor layer was formed. Furthermore, a gold electrode is vacuum-deposited on the organic semiconductor layer using a vacuum-deposited device (trade name VTR-350M / ERH manufactured by ULVAC Kiko Co., Ltd.), and a bottom gate top contact (BGTC) type element, which is a form of an organic transistor, is formed. Was produced.

Using a semiconductor parameter analyzer (manufactured by Caseley, trade name 4200-SCS), the drain voltage (Vd = -50V) and gate voltage (Vg) are scanned from +20 to -50V in 1V increments, and the transfer characteristics (Id-Vg) are obtained. Was obtained, and the mobility, threshold voltage, on-current / off-current ratio, and hysteresis of source-drain current were evaluated.

<Evaluation method of off-current>
After forming a flattening layer on washed and dried 10 × 10 cm ² glass (Eagle XG manufactured by Corning Inc.), silver was vacuum-deposited to form an electrode having a thickness of 30 nm. Immediately thereafter, the mixture was immersed in a 2-propanol solution of pentafluorobenzenethiol, washed with 2-propanol, and then blow-dried. After forming an organic semiconductor layer on the base material on which the electrodes are formed, 0.9 g of dichlorodiparaxylylene (manufactured by Japan Parylene, trade name DPX-C) is used with a lab coater (manufactured by Japan Parylene, trade name PDS2010). Was vacuum-deposited to form a poly (parachloroxylylene) gate insulating layer. Furthermore, a silver electrode is vacuum-deposited on the gate insulating layer using a vacuum-deposited device (trade name VTR-350M / ERH manufactured by ULVAC Kiko Co., Ltd.), and a top gate / bottom contact (TGBC) type element, which is a form of an organic transistor, is formed. Was produced.

Using a semiconductor parameter analyzer (manufactured by Keithley, trade name 4200-SCS), the drain voltage (Vd = -20V) and gate voltage (Vg) are scanned from +10 to -20V in 1V increments, and the transmission characteristics (Id-Vg) are obtained. Was obtained and the off-current was evaluated.

Synthesis Example 1 (Synthesis example of diethyl fumarate-monoethyl fumarate copolymer (fumaric acid ester resin 1))
In a glass ampoule having a capacity of 75 mL, 51.5 g of diethyl fumarate, 18.5 g of monoethyl fumarate, and 1.06 g of tert-butylperoxypivalate, which is a polymerization initiator, were placed, and nitrogen substitution and depressurization were repeated, and then the pressure was reduced. It was sealed in the state. This ampoule was placed in a constant temperature bath at 55 ° C. and held for 24 hours for radical polymerization. After completion of the polymerization reaction, the polymer was taken out from the ampoule and dissolved in 180 g of toluene. This toluene solution is added dropwise to 3 L of methanol to precipitate a resin, and then vacuum dried at 60 ° C. for 4 hours to obtain 17 g of a diethyl fumarate-monoethyl fumarate copolymer (fumaric acid ester resin 1). Obtained (yield: 24%). ^{1 By 1} H-NMR measurement, the fumaric acid ester-based resin 1 was a fumarate diethyl residue unit / fumarate monoethyl residue unit = 75/25 (mol%). The number average molecular weight of the fumaric acid ester resin 1 was 13,000.

Synthesis Example 2 (Synthesis example of diethyl fumarate-monoethyl fumarate copolymer (fumaric acid ester resin 2))
In a glass ampoule having a capacity of 75 mL, 59.5 g of diethyl fumarate, 5.5 g of monoethyl fumarate, and 0.96 g of tert-butylperoxypivalate, which is a polymerization initiator, were placed, and nitrogen substitution and depressurization were repeated, and then the pressure was reduced. It was sealed in the state. This ampoule was placed in a constant temperature bath at 55 ° C. and held for 24 hours for radical polymerization. After completion of the polymerization reaction, the polymer was taken out from the ampoule and dissolved in 180 g of toluene. This toluene solution is added dropwise to 3 L of methanol to precipitate a resin, and then vacuum dried at 60 ° C. for 4 hours to obtain 16 g of a diethyl fumarate-monoethyl fumarate copolymer (fumaric acid ester resin 2). Obtained (yield: 24%). ^{1 By 1} H-NMR measurement, the fumaric acid ester-based resin 2 was a fumaric acid diethyl residue unit / fumaric acid monoethyl residue unit = 95/5 (mol%). The number average molecular weight of the fumaric acid ester resin 2 was 19,000.

Synthesis Example 3 (Synthesis example of diisopropyl fumarate-monoethyl fumarate copolymer (fumaric acid ester resin 3))
In a glass ampoule having a capacity of 75 mL, 49.7 g of diisopropyl fumarate, 15.3 g of monoethyl fumarate, and 0.88 g of tert-butylperoxypivalate, which is a polymerization initiator, were placed, and nitrogen substitution and depressurization were repeated, and then the pressure was reduced. It was sealed in the state. This ampoule was placed in a constant temperature bath at 55 ° C. and held for 24 hours for radical polymerization. After completion of the polymerization reaction, the polymer was taken out from the ampoule and dissolved in 180 g of toluene. This toluene solution is added dropwise to 3 L of methanol to precipitate a resin, and then vacuum dried at 60 ° C. for 4 hours to obtain 30 g of a diisopropyl fumarate-monoethyl fumarate copolymer (fumaric acid ester resin 3). Obtained (yield: 46%). ^{1 By 1} H-NMR measurement, the fumaric acid ester resin 3 had a diisopropyl fumarate residue unit / monoethyl fumarate residue unit = 76/24 (mol%). The number average molecular weight of the fumaric acid ester resin 3 was 30,000.

Synthesis Example 4 (Synthesis example of diisopropyl fumarate-diethyl fumarate (fumaric acid ester resin 4))
In a 1 L autoclave equipped with a stirrer, a cooling tube, a nitrogen introduction tube and a thermometer, 2 g of hydroxypropylmethyl cellulose (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: Metros 60SH-50), 600 g of distilled water, 360 g of diisopropyl fumarate, 40 g of diethyl fumarate, And 3 g of t-butylperoxypivalate as a polymerization initiator was added, and after nitrogen bubbling was carried out for 1 hour, radical suspension polymerization was carried out by holding at 45 ° C. for 36 hours while stirring at 400 rpm. The suspension was cooled to room temperature, the suspension containing the produced polymer particles was filtered off, and washed with distilled water and methanol to obtain a diisopropyl fumarate-diethyl fumarate copolymer (fumaric acid ester resin 4) (fumaric acid ester resin 4). Yield: 70%). ^{1 By 1} H-NMR measurement, the fumaric acid ester resin 4 was found to be diisopropyl fumarate residue unit / diethyl fumarate residue unit = 88/12 (mol%). The number average molecular weight of the fumaric acid ester resin 4 was 125,000.

Example 1
(Preparation of resin solution)
Insulation by mixing 1 g of the fumaric acid ester resin obtained in Synthesis Example 1 and 0.32 g of the crosslinkable compound 1-chloro-2,3-epoxypropane, 2,7-naphthalenediol, and formaldehyde polycondensate. A composition for materials was prepared, and the composition for insulating materials was dissolved in 9 g of n-butyl acetate, which is an organic solvent, to prepare a resin solution (fumaric acid ester resin: 9.7% by weight, crosslinkable compound: 3). .1% by weight, organic solvent: 87.2% by weight).
(Manufacturing and evaluation of insulating layer and organic transistor)
Silver was vacuum-deposited on a washed and dried 30 × 30 mm ² glass (base material) (Eagle XG manufactured by Corning Inc.) to form an electrode having a thickness of 30 nm. The obtained resin solution is formed on a substrate on which an electrode is formed using a spin coater (manufactured by Mikasa Co., Ltd., trade name: Opticoat MS-A100), and heated at 150 ° C. for 30 minutes to form an insulating layer. bottom. Further, a gold electrode was vacuum-deposited on the insulating layer using a vacuum vapor deposition apparatus (manufactured by ULVAC Kiko Co., Ltd., trade name: VTR-350M / ERH) to prepare a MIM capacitor. Then, the performance of the insulating layer was evaluated using the MIM capacitor.

An electrode is formed in the same manner as the electrode is formed by the above-mentioned MIM capacitor, and an insulating layer is formed on the base material on which the electrode is formed. 3'-f] thieno [3,2-b] thiophene (DNTT) was vacuum-deposited. Further, a gold electrode was vacuum-deposited on the organic semiconductor layer to fabricate a bottom gate top contact (BGTC) type organic transistor element. Then, the performance of the organic transistor element was evaluated.

Table 1 shows the evaluation results of the physical characteristics, the insulating properties, and the performance of the organic transistor element of the produced insulating layer.

The residual film ratio exceeded 98%, and solvent resistance was exhibited by heating at 150 ° C. for 30 minutes. Related breakdown strength 4MV / cm or more, the leakage current density ¹⁰ -8 A / cm ² or less, on current / off current ratio of 10 ⁵ or more, not observed hysteresis in the current between the source and drain, the gate insulating layer It had possible performance.

Example 2
(Manufacturing and evaluation of insulating layer and organic transistor)
A MIM capacitor and an organic transistor element were manufactured in the same manner as in Example 1 except that the resin solution used in Example 1 was formed into a film (preparation of an insulating layer) and then heated at 150 ° C. for 60 minutes. Then, the performance of the insulating layer and the organic transistor element was evaluated.

Table 1 shows the evaluation results of the physical characteristics, the insulating properties, and the performance of the organic transistor element of the produced insulating layer.

It was confirmed that the performance was improved by increasing the curing time, and excellent performance could be exhibited as a gate insulating layer for organic transistors.

Example 3
(Preparation of resin solution)
Insulation by mixing 1 g of the fumaric acid ester resin obtained in Synthesis Example 2 and 0.06 g of the crosslinkable compound 1-chloro-2,3-epoxypropane, 2,7-naphthalenediol, and formaldehyde polycondensate. A composition for materials was prepared, and the composition for insulating materials was dissolved in 9 g of n-butyl acetate, which is an organic solvent, to prepare a resin solution (fumaric acid ester resin: 9.9% by weight, crosslinkable compound: 0). 6.6% by weight, organic solvent: 89.5% by weight).
(Manufacturing and evaluation of insulating layer and organic transistor)
A MIM capacitor and an organic transistor element were manufactured in the same manner as in Example 2 except that a film was formed (preparation of an insulating layer) using the obtained resin solution. Then, the performance of the insulating layer and the organic transistor element was evaluated.

Table 1 shows the evaluation results of the physical characteristics, the insulating properties, and the performance of the organic transistor element of the produced insulating layer.

It was confirmed that the gate insulating layer for an organic transistor had excellent performance as in Example 1.

Example 4
(Preparation of resin solution)
0.6 g of the fumaric acid ester resin obtained in Synthesis Example 3 and 0.16 g of the crosslinkable compound 1-chloro-2,3-epoxypropane, 2,7-naphthalenediol, and formaldehyde polycondensate were mixed. The insulating material composition was prepared by dissolving the insulating material composition in 9.4 g of n-butyl acetate, which is an organic solvent, to prepare a resin solution (fumaric acid ester resin: 9.5% by weight, crosslinked. Sex compound: 1.5% by weight, organic solvent: 89.0% by weight).
(Manufacturing and evaluation of insulating layer and organic transistor)
A MIM capacitor and an organic transistor element were manufactured in the same manner as in Example 1 except that a film was formed (preparation of an insulating layer) using the obtained resin solution. Then, the performance of the insulating layer and the organic transistor element was evaluated.

Table 1 shows the evaluation results of the physical characteristics, the insulating properties, and the performance of the organic transistor element of the produced insulating layer.

It was confirmed that the gate insulating layer for an organic transistor had excellent performance as in Example 1.

Example 5
(Preparation of resin solution)
1 g of fumaric acid ester resin obtained in Synthesis Example 1, 0.32 g of 1-chloro-2,3-epoxypropane, 2,7-naphthalenediol, formaldehyde polycondensate, which is a crosslinkable compound, trimethoxyphenylsilane 0 .30 g was mixed to prepare a composition for an insulating material, and the composition for an insulating material was dissolved in 9 g of n-butyl acetate, which is an organic solvent, to prepare a resin solution (fumaric acid ester resin: 9.4). Weight%, crosslinkable compound: 3.0% by weight, silane compound: 2.8% by weight, organic solvent: 84.7% by weight).
(Manufacturing and evaluation of insulating layer and organic transistor)
Using the obtained resin solution, an insulating layer is formed by heating at 150 ° C. for 5 minutes (preparation of an insulating layer), and 0.5 wt% of 2,7-di (n-hexyl) dithienobenzodithiophene. A MIM capacitor and an organic transistor element were produced in the same manner as in Example 1 except that the toluene solution was drop cast and naturally dried at room temperature (25 ° C.) to form an organic semiconductor layer. Then, the performance of the insulating layer and the organic transistor element was evaluated.

Table 1 shows the evaluation results of the physical characteristics, the insulating properties, and the performance of the organic transistor element of the produced insulating layer.

It was confirmed that the gate insulating layer for an organic transistor had excellent performance as in Example 1.

Example 6
(Manufacturing and evaluation of flattening layer and organic transistor)
The resin solution obtained in Example 4 was formed on a washed and dried 10 × 10 cm ² glass (Eagle XG manufactured by Corning Inc.) using a spin coater (manufactured by Mikasa Co., Ltd., trade name Opticoat MS-A100). , 150 ° C. for 30 minutes to form a flattening layer. Further, a silver electrode was vacuum-deposited on the flattening layer using a vacuum vapor deposition apparatus (manufactured by ULVAC Kiko Co., Ltd., trade name: VTR-350M / ERH) to form an electrode having a thickness of 30 nm. Immediately after that, it was immersed in a 2-propanol solution of pentafluorobenzenethiol 30 mmol / L, taken out after 5 minutes, washed with 2-propanol, and blow-dried. A 0.5 wt% toluene solution of 2,7-di (n-hexyl) dithienobenzodithiophene was drop-cast onto the base material on which the electrodes were formed, and air-dried at room temperature (25 ° C.) to form an organic semiconductor layer. After formation, 0.9 g of dichlorodiparaxylylene (manufactured by Japan Parylene, trade name DPX-C) was vacuum-deposited using a lab coater (manufactured by Japan Parylene, trade name PDS2010) to form a poly (parachloroxylylene). A gate insulating layer was formed. Furthermore, a silver electrode is vacuum-deposited on the gate insulating layer using a vacuum-deposited device (trade name VTR-350M / ERH manufactured by ULVAC Kiko Co., Ltd.), and a top gate / bottom contact (TGBC) type element, which is a form of an organic transistor, is formed. Was produced. Then, the performance of the top gate / bottom contact (TGBC) type element as a flattening layer was evaluated.

Table 2 shows the evaluation results of the performance as a flattening layer.

It was confirmed that excellent performance can be exhibited as a flattening layer for organic transistors.

Comparative Example 1
Example 1 except that a resin solution obtained by dissolving 1 g (10.0% by weight) of the fumaric acid ester resin obtained in Synthesis Example 1 in 9 g (90.0% by weight) of n-butyl acetate was used. MIM capacitors and organic transistor elements were manufactured in the same manner.

Table 1 shows the evaluation results of the physical characteristics, the insulating properties, and the performance of the organic transistor element of the produced insulating layer.

Since the resin solution does not contain a crosslinkable compound, the insulating layer is not crosslinked and the insulating property is poor, and the insulating layer is dissolved during the film formation of the organic semiconductor, so that the organic transistor element does not operate.

Comparative Example 2
Using a resin solution obtained by dissolving 1 g (5.0% by weight) of the fumaric acid ester resin obtained in Synthesis Example 4 in 19 g (95.0% by weight) of n-butyl acetate, the temperature was 50 ° C. for 10 minutes. The MIM capacitor and the organic transistor element were manufactured in the same manner as in Example 1 except that the insulating layer was formed by heating (preparation of the insulating layer).

Table 1 shows the evaluation results of the physical characteristics, the insulating properties, and the performance of the organic transistor element of the produced insulating layer.

Although the fumaric acid ester-based resin was excellent in insulating properties, the insulating layer was not crosslinked, so that the insulating layer was melted during the film formation of the organic semiconductor, and the organic transistor element did not operate.

Comparative Example 3 (Manufacturing and evaluation of insulating layer and organic transistor)
Spin a resin solution containing 3.0 g of divinyltetramethylsiloxane bisbenzocyclobutene (trade name: CYCLOTENE3022-35 manufactured by Dow Chemical Co., Ltd.) and 3.0 g of mesitylene in a glove box on a substrate on which an electrode is formed. A film is formed using a coater (manufactured by Mikasa Co., Ltd., trade name: Opticoat MS-A100), and the insulating layer is heated at 80 ° C for 3 minutes, 150 ° C for 3 minutes, 210 ° C for 40 minutes, and 250 ° C for 60 minutes. A MIM capacitor and an organic transistor element were manufactured in the same manner as in Example 1 except that the above was formed. Then, the performance of the insulating layer and the organic transistor element was evaluated.

Table 1 shows the evaluation results of the physical characteristics, the insulating properties, and the performance of the organic transistor element of the produced insulating layer.

The insulating layer using divinyltetramethylsiloxane bisbenzocyclobutene required high temperature and long-term heating, and was inferior in film forming property.

Comparative Example 4 (Manufacturing and Evaluation of Organic Transistor)
Same as Comparative Example 3 except that a 0.5 wt% toluene solution of 2,7-di (n-hexyl) dithienobenzodithiophene was drop-cast and air-dried at room temperature (25 ° C.) to form an organic semiconductor layer. Then, an organic transistor element was manufactured. Then, the performance of the organic transistor element was evaluated.

Table 1 shows the evaluation results of the physical characteristics, the insulating properties, and the performance of the organic transistor element of the produced insulating layer.

The insulating layer using divinyltetramethylsiloxane bisbenzocyclobutene required high temperature and long-term heating, and was inferior in film forming property. Further, it was confirmed that the manufactured organic transistor element was inferior in performance with respect to the threshold voltage.

Comparative Example 5 (Manufacturing and evaluation of insulating layer and organic transistor)
On the base material on which the electrode was formed, 1 g of polyvinylphenol (manufactured by Sigma Aldrich, Mw-25000) was dissolved in 4 g of propylene glycol-1-monomethyl ether-2-acetate (manufactured by Kanto Chemical Co., Inc., special grade deer) in a glove box. 4. Add 0.5 g of poly (melamine-co-formaldehyde) (Mw432, manufactured by Sigma Aldrich) to the solution obtained by propylene glycol-1-monomethyl ether-2-acetate (manufactured by Kanto Chemical Co., Inc., special grade deer). A resin solution obtained by dissolving the solution in 5 g and mixing it is formed into a film using a spin coater (manufactured by Mikasa Co., Ltd., trade name: Opticoat MS-A100), and heated at 90 ° C. for 10 minutes and at 150 ° C. for 60 minutes. A MIM capacitor and an organic transistor element were manufactured in the same manner as in Example 4 except that the insulating layer was formed. Then, the performance of the insulating layer and the organic transistor element was evaluated.

Table 1 shows the evaluation results of the physical characteristics, the insulating properties, and the performance of the organic transistor element of the produced insulating layer.

The insulating layer using crosslinked polyvinylphenol had a low temperature but required long-term heating. It was also confirmed that the manufactured organic transistor element was inferior in performance with respect to the leakage current density.

Comparative Example 6 (fabrication and evaluation of flattening layer and organic transistor)
On the base material on which the electrode was formed, 1 g of polyvinylphenol (manufactured by Sigma Aldrich, Mw-25000) was dissolved in 4 g of propylene glycol-1-monomethyl ether-2-acetate (manufactured by Kanto Chemical Co., Inc., special grade deer) in a glove box. 4. Add 0.5 g of poly (melamine-co-formaldehyde) (Mw432, manufactured by Sigma Aldrich) to the solution obtained by propylene glycol-1-monomethyl ether-2-acetate (manufactured by Kanto Chemical Co., Inc., special grade deer). A resin solution obtained by dissolving the solution in 5 g was formed into a film using a spin coater (manufactured by Mikasa Co., Ltd., trade name: Opticoat MS-A100), and heated at 90 ° C. for 10 minutes and at 150 ° C. for 60 minutes. An organic transistor element was produced in the same manner as in Example 6 except that the flattening layer was formed. Then, the performance of the top gate / bottom contact (TGBC) type element as a flattening layer was evaluated.

The evaluation results as a flattening layer are also shown in Table 2.

The flattening layer using crosslinked polyvinylphenol was low in temperature but required long-term heating. Further, it was confirmed that the produced organic transistor element has a large off-current and is inferior in performance as a flattening layer.

It is possible to provide a composition for an insulating material useful for forming an insulating layer for a high-quality organic transistor device that can be manufactured by printed electronics technology.

(A): Bottom Gate-Top Contact Organic Transistor (B): Bottom Gate-Bottom Contact Organic Transistor (C): Top Gate-Top Contact Organic Transistor (D): Top Gate-Bottom Contact Organic Transistor 1: Organic semiconductor layer 2: Substrate 3: Gate electrode 4: Gate insulating layer 5: Source electrode 6: Drain electrode

Claims (8)

A fumaric acid ester resin containing 1 to 99 mol% of fumaric acid diester residues represented by the following general formula (1) and 1 to 99 mol% of residue units represented by the following general formula (2), and a fumaric acid ester resin. A composition for an insulating material containing a crosslinkable compound.

(Here, R ¹ and R ² are independently an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, and an alkynyl group having 2 to 20 carbon atoms, respectively. Or it indicates a substituted silyl group.)

(Here, R ³ is an independently hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, and the like. Substitutable silyl group, halogen atom, cyano group, -C (O) OR ⁴ group, or substituent represented by the following general formula (3), R ⁴ is an alkyl group having 1 to 20 carbon atoms and 4 carbon atoms. 20 aryl group, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms or a substituted silyl group, a substituted group at least one of ^{R 3} are represented by the general formula (3), Is.)

(Here, E represents an OH group. L represents an oxygen atom, a sulfur atom, a −CR ⁶ R ⁷ − group, a substituted phenylene group, a carbonyl group, and a −NR ⁸ − group, and R ^{6 to} R ⁸ are independent of each other. The n represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 4 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, or a substituted silyl group. It indicates an integer of 0 to 20, and when n is 2 or more, L may be the same or different from each other.) The composition for an insulating material according to claim 1, wherein the crosslinkable compound is a polyfunctional epoxy compound. The composition for an insulating material according to claim 1 or 2 , further comprising a silane compound. A resin solution containing the composition for an insulating material according to any one of claims 1 to 3 and an organic solvent. An insulating layer using the composition for an insulating material according to any one of claims 1 to 3. An organic transistor comprising the insulating layer according to claim 5 as a gate insulating layer. An organic transistor comprising the insulating layer according to claim 5 as a flattening layer. An electronic device comprising the organic transistor according to claim 6 or 7.

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