JP6968945B2 - Method for manufacturing reflective mask blanks, reflective masks and semiconductor devices - Google Patents

Description

The present invention relates to a reflective mask blank and a reflective mask, which are original plates for manufacturing an exposure mask used for manufacturing a semiconductor device, and a method for manufacturing a semiconductor device using the reflective mask.

The types of light sources of exposure apparatus in semiconductor manufacturing have been evolving while gradually shortening the wavelengths, such as g-rays having a wavelength of 436 nm, i-rays having a wavelength of 365 nm, KrF lasers having a wavelength of 248 nm, and ArF lasers having a wavelength of 193 nm. In order to realize finer pattern transfer, EUV lithography using extreme ultraviolet rays (EUV: Extreme Ultra Violet) in the vicinity of 13.5 nm as the wavelength of the light source has been proposed. In EUV lithography, a reflective mask is used because the difference in absorption rate between materials with respect to EUV light is small. As a reflective mask, for example, a multilayer reflective film that reflects exposure light is formed on a substrate, and a phase shift film that absorbs exposure light is patterned on a protective film for protecting the multilayer reflective film. What has been formed has been proposed. The light incident on the reflective mask mounted on the exposure machine (pattern transfer device) is absorbed by the portion with the phase shift film pattern and reflected by the multilayer reflective film in the portion without the phase shift film pattern. The image is transferred onto the semiconductor substrate through the reflection optical system. A part of the exposure light incident on the phase shift film pattern is reflected with a phase difference of about 180 degrees from the light reflected by the multilayer reflective film (phase shift), thereby obtaining contrast (resolution). ..

Patent Documents 1 to 3 and the like disclose techniques related to such a reflective mask for EUV lithography and a mask blank for producing the same.

Patent Document 1 describes that a thin film (phase shift film) is a two-layer film in order to apply the principle of a halftone mask to EUV exposure to improve transfer resolution. As a specific material for the two-layer film, a combination of a Mo layer and a Ta layer is described.

In Patent Document 2, in order to apply the principle of the halftone mask to EUV exposure and improve the transfer resolution, the material of the halftone film (phase shift film) made of a single layer film is used for the refractive index and the extinction. In FIG. 2 showing the plane coordinates with the coefficient as the coordinate axis, it is described that the selection is made from the area surrounded by the square frame. TaMo (composition ratio 1: 1) is described as a specific material for the monolayer film.

In Patent Document 3, in a halftone EUV mask, the material of the halftone film is Ta in order to have a high degree of freedom in selectivity of reflectance and high cleaning resistance and to reduce a projection effect (shadowing effect). It is described that it is a compound of Ru and Ru, and its composition range is defined.

Here, the shadowing effect is the following phenomenon. For example, in an exposure apparatus using a reflective mask, the light is incident at a slight angle from the direction perpendicular to the mask so that the optical axes of the incident light and the reflected light do not overlap. If the phase shift film pattern of the mask is thick, shadows based on the thickness of the phase shift film pattern are generated due to the inclination of the light in the incident direction. The fact that the dimensions of the transfer pattern change by the amount of this shadow is called the shadowing effect.

Patent Document 4 includes a high-reflection portion formed on a substrate and a patterned low-reflection portion formed on the high-reflection portion, and the low-reflection portion is Ta (tantal) or Mo (molybdenum). And halftone EUV masks with Si (silicon) are described.

Japanese Unexamined Patent Publication No. 2004-207593 Japanese Unexamined Patent Publication No. 2006-228766 Patent No. 5233321 Japanese Unexamined Patent Publication No. 2009-098611

The phase shift film of the reflective mask includes light reflected by a part of the multi-layer reflective film of the exposure light incident on the phase shift film pattern and light reflected by the multi-layer reflective film in the portion without the phase shift film pattern. Is designed to have a phase difference of about 180 degrees with respect to light having a wavelength of 13.5 nm. Further, the surface of the phase shift film is provided with an antireflection layer using a material having a low reflectance in exposure to inspection light. In the case of a phase shift film composed of two or more layers, for example, it is shown in FIG. 3 due to interference between the reflected light from the outermost surface of the phase shift film and the reflected light from the multilayer reflective film existing under the phase shift film. As described above, a vibration structure is generated depending on the film thickness of the phase difference. If this vibration structure is large, the phase difference will change significantly with respect to the change in the film thickness of the phase shift film, so that a stable phase difference cannot be obtained with respect to the change in the film thickness of the phase shift film.

Therefore, an object of the present invention is to provide a reflective mask blank having a phase shift film having a small phase difference depending on the film thickness.

In the phase shift film composed of the uppermost layer and other layers, the present inventors have transmitted the reflected light from the uppermost layer of the phase shift film and the phase shift film by giving the phase shift film a reflection suppression function. It has been found that by weakening the interference of light with the reflected light from the multilayer reflective film, it is possible to suppress the occurrence of a vibration structure depending on the film thickness of the phase difference. The present inventors have found that a reflective mask blank having a phase shift film having a small phase difference film thickness dependence can be obtained by suppressing the occurrence of a vibration structure in the phase difference film thickness dependence. It led to the invention.

Specifically, in the phase shift film composed of the uppermost layer and other layers, the optical path length (refractive index n × film thickness d) in the phase shift film of light having an exposure wavelength λ = 13.5 nm is λ / 4. When the phase shift film is in the range of ± α (nm) centered on an odd multiple, the reflection suppression function of the phase shift film works effectively, and it is possible to suppress the occurrence of a vibration structure depending on the film thickness of the phase difference. I found it. The present inventors have found that it is appropriate to set α = 1.5 nm by optical simulation, and have reached the present invention.

In order to solve the above problems, the present invention has the following configuration. The present invention is a method for manufacturing a reflective mask blank of the following configurations 1 to 9, a reflective mask of the following configuration 10, and a semiconductor device of the following configuration 11.

(Structure 1)
Configuration 1 of the present invention is a reflective mask blank in which a multilayer reflective film and a phase shift film for shifting the phase of EUV light are formed in this order on a substrate.
The phase shift film has an uppermost layer and a lower layer other than the uppermost layer.
n ₂ <n ₁ <1 ... (1) and λ / 4 × (2m + 1) −α ≦ n ₁・ d ₁ ≦ λ / 4 × (2m + 1) + α ・ ・ ・ (2)
It is a reflective mask blank characterized by satisfying the relationship of. However, in the above formula, n ₁ is the refractive index at the exposure wavelength λ = 13.5 nm of the uppermost layer, n ₂ is the refractive index at the exposure wavelength λ = 13.5 nm of the lower layer, and d ₁ is the film thickness of the uppermost layer. (Nm), m is an integer greater than or equal to zero, and α = 1.5 nm.

According to the configuration 1 of the present invention, since the reflectance on the surface of the phase shift film can be reduced, it is possible to obtain a reflective mask blank having a phase shift film having a small phase difference depending on the film thickness.

(Structure 2)
Configuration 2 of the present invention is a reflective mask blank of Configuration 1, characterized in that m is 2 or less.

The problem of shadowing effect is exacerbated by the increase in the aspect ratio (ratio of the pattern film thickness to the line width of the pattern) with the miniaturization of the pattern. According to the configuration 2 of the present invention, the phase shift film can be thinned by setting m to 2 or less. Therefore, the shadowing effect of the obtained reflective mask can be suppressed.

(Structure 3)
Configuration 3 of the present invention is a reflective mask blank of Configuration 1 or 2, wherein the uppermost layer of the phase shift film is made of a material containing a silicon compound, and the lower layer is made of a material containing a tantalum compound. ..

According to the configuration 3 of the present invention, a desired phase shift amount can be obtained by including the uppermost layer and the lower layer of a predetermined material in the phase shift film.

の関係を満たすことを特徴とする反射型マスクブランクである。ただし、上記式中、ｉは１〜Ｎの整数、ｎ_ｉは第ｉ層の露光波長λ＝１３．５ｎｍにおける屈折率、ｄ_ｉは前記第ｉ層の膜厚（ｎｍ）、及びα＝１．５ｎｍである。 (Structure 4)
Configuration 4 of the present invention is a reflective mask blank in which a multilayer reflective film and a phase shift film for shifting the phase of EUV light are formed in this order on a substrate.
The phase shift film is composed of one layer or a multilayer film containing two or more unit thin films containing the first layer to the Nth layer (N is an integer of 2 or more) in this order, and is located farthest from the multilayer reflective film. The first layer of the located unit thin film is the top layer,

It is a reflective mask blank characterized by satisfying the relationship of. However, in the above formula, i is an integer of 1 to N, _{n i} is the refractive index at an exposure wavelength lambda = 13.5 nm of the i layer, _{d i} is the thickness of said i-layer (nm), and alpha = 1 It is 5.5 nm.

According to the configuration 4 of the present invention, since the reflectance on the surface of the phase shift film can be reduced, it is possible to obtain a reflective mask blank having a phase shift film having a small phase difference depending on the film thickness.

(Structure 5)
Configuration 5 of the present invention _is a _{n i} + 1 _{<n i} and the reflective mask blank of the configuration 4, which is a _n 1 <1,.

According to the configuration 5 of the present invention, the refractive index of the i + 1 layer is smaller than the refractive index of the i-layer and the refractive index of the first layer is less than 1 with respect to the refractive index at the exposure wavelength λ = 13.5 nm. Thereby, the reflection on the surface of the phase shift film can be made smaller.

(Structure 6)
Configuration 6 of the present invention is a reflective mask blank of configuration 4 or 5, characterized in that N = 2.

According to the configuration 6 of the present invention, since N = 2, it is possible to obtain a phase shift film having a multilayer film having two unit thin films, and the phase shift film suppresses reflection without impairing the ease of etching. It can have a function.

(Structure 7)
Constituent 7 of the present invention is the reflective mask blank according to any one of Constituents 4 to 6, wherein the first layer contains at least one metal material selected from Ta and Cr.

According to the configuration 7 of the present invention, the first layer contains at least one metal material selected from Ta and Cr to obtain an appropriate refractive index and extinction coefficient as the first layer of the phase shift film. Can be done.

(Structure 8)
The second layer of the present invention is a reflective type according to any one of configurations 4 to 7, wherein the second layer contains at least one metal material selected from Mo, Ru, Pt, Pd, Ag and Au. It is a mask blank.

According to the configuration 8 of the present invention, since the second layer contains a predetermined metal material, an appropriate refractive index and extinction coefficient can be obtained as the second layer of the phase shift film.

(Structure 9)
Configuration 9 of the present invention is a reflective mask blank according to any one of configurations 1 to 8, wherein a protective film is provided between the multilayer reflective film and the phase shift film.

According to the configuration 9 of the present invention, since the protective film is formed on the multilayer reflective film, damage to the surface of the multilayer reflective film when manufacturing a reflective mask using the substrate with the multilayer reflective film is suppressed. be able to. Therefore, the reflectance characteristic of the reflective mask with respect to EUV light is good.

(Structure 10)
The configuration 10 of the present invention is a reflective mask characterized in that the phase shift film in any of the reflective mask blanks of configurations 1 to 9 has a patterned phase shift film pattern.

Since the above-mentioned reflective mask blank is used for manufacturing the reflective mask according to the configuration 10 of the present invention, it is possible to obtain a reflective mask having a phase shift film pattern having a small phase difference depending on the film thickness.

(Structure 11)
The configuration 11 of the present invention is a method for manufacturing a semiconductor device, which comprises a pattern forming step of forming a pattern on a semiconductor substrate by using the reflective mask of the configuration 10.

According to the method for manufacturing a semiconductor device according to the present invention, since it is possible to use a reflective mask having a phase shift film pattern having a small phase difference depending on the film thickness, it has a fine and highly accurate transfer pattern. Semiconductor devices can be manufactured.

INDUSTRIAL APPLICABILITY According to the present invention, it is possible to provide a reflective mask blank having a phase shift film having a small phase difference depending on the film thickness.

Further, by using the reflective mask blank of the present invention, it is possible to obtain a reflective mask having a phase shift film pattern having a small phase difference depending on the film thickness.

Further, according to the method for manufacturing a semiconductor device of the present invention, a reflective mask having a phase shift film pattern having a small phase difference depending on the film thickness can be used, so that a semiconductor device having a fine and highly accurate transfer pattern can be used. Can be manufactured.

It is sectional drawing for demonstrating the schematic structure of the reflection type mask blank for EUV lithography of Embodiment 1 of this invention. It is sectional drawing for demonstrating the schematic structure of the reflection type mask blank for EUV lithography of Embodiment 2 of this invention. It is a figure which shows the relationship between the thickness of the phase shift film of Examples 1 to 4 and Comparative Examples 1 and 2 and the phase difference obtained by simulation. It is an enlarged view of Example 1 and Comparative Example 1 shown in FIG. 3, and is a figure which shows the film thickness range which the phase difference variation becomes 10 degrees (175 degrees to 185 degrees). It is a graph which shows the characteristic of the extinction coefficient k and the refractive index n of a metal material in EUV light (wavelength 13.5 nm). It is a figure which shows the relationship between the thickness of the phase shift film of Examples 5-7 and the phase difference obtained by the simulation.

Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings. It should be noted that the following embodiments are embodiments for embodying the present invention, and do not limit the present invention to the scope thereof.

FIG. 1 shows a schematic cross-sectional view of the reflective mask blank 10 according to the first embodiment of the present invention. In the reflective mask blank 10 of the present embodiment, a multilayer reflective film 13 and a phase shift film 15 for shifting the phase of EUV light are formed on the substrate 12 in this order. The phase shift film 15 of the reflective mask blank 10 of the present embodiment has an uppermost layer 16 and a lower layer 17 other than the uppermost layer 16. The phase shift film 15 of the reflective mask blank 10 of the present embodiment has the relationship of the following equations (1) and (2).
n ₂ <n ₁ <1 ... (1) and λ / 4 × (2m + 1) −α ≦ n ₁・ d ₁ ≦ λ / 4 × (2m + 1) + α ・ ・ ・ (2)
It is characterized by satisfying. However, in the above equations (1) and (2), n ₁ is the refractive index of the uppermost layer 16 at the exposure wavelength λ = 13.5 nm, and n ₂ is the refractive index of the lower layer 17 at the exposure wavelength λ = 13.5 nm. d ₁ is the film thickness of the uppermost layer 16, m is an integer of zero or more, and α = 1.5. The reflective mask blank 10 shown in FIG. 1 has one lower layer 17.

を満たすことを特徴とする。ただし、上記式（３）中、ｉは１〜Ｎの整数、ｎ_ｉは、第ｉ層（ｉは１以上Ｎ以下の任意の整数）の露光波長λ＝１３．５ｎｍにおける屈折率、ｄ_ｉは、前記第ｉ層の膜厚（ｎｍ）、及びα＝１．５ｎｍである。 FIG. 2 shows a schematic cross-sectional view of the reflective mask blank 10 according to the second embodiment of the present invention. In the reflective mask blank 10 of the present embodiment, the multilayer reflective film 13 and the phase shift film 15 for shifting the phase of EUV light are formed on the substrate 12 in this order. The phase shift film 15 of the reflective mask blank 10 of the present embodiment includes the first layer to the Nth layer (N is an integer of 2 or more, and N = 2 in the example of FIG. 2) in this order. The unit thin film 18 is included in one layer or two or more layers. In the present specification, the number of repetitions of the unit thin film 18 is referred to as "period". In the reflective mask blank 10 of the present embodiment, among the unit thin films 18 of the phase shift film 15, the first layer 15a of the unit thin film 18 located at the farthest place from the multilayer reflective film 13 is the uppermost layer 16. When the unit thin film 18 has a plurality of cycles, the unit thin film 18 is laminated so that the first layer 15a of each unit thin film 18 is located farther from the multilayer reflective film 13. The phase shift film 15 of the reflective mask blank 10 of the present embodiment has the relation of the following equation (3).

It is characterized by satisfying. However, in the above formula (3), i is an integer of 1 to N, _{n i} is the refractive index at an exposure wavelength lambda = 13.5 nm of the i layer (i is 1 or more N or less arbitrary integer), _{d i} Is the film thickness (nm) of the i-th layer and α = 1.5 nm.

FIG. 3 shows the relationship between the film thickness of the phase shift film 15 and the phase difference. As shown in FIG. 3, the film thickness of the phase shift film 15 and the phase difference do not have a monotonous increase relationship. This is due to the interference between the reflected light from the uppermost layer 16 of the phase shift film 15 and the reflected light from the multilayer reflective film 13 of the light transmitted through the phase shift film 15, and this is a vibrational change in the phase difference ( This is because, in the present specification, this is referred to as “vibration structure”). In the reflective mask blank 10 of the present invention, the predetermined film constituting the phase shift film 15 satisfies the above-mentioned relationship between the predetermined refractive index and the film thickness, so that the uppermost layer 16 of the phase shift film 15 has a reflection suppressing function. Can be given. By having the reflection suppressing function in the uppermost layer 16 of the phase shift film 15, it is possible to weaken the interference between the reflected light from the uppermost layer 16 and the reflected light from the multilayer reflective film 13. As a result, it is possible to suppress the occurrence of a vibration structure depending on the film thickness of the phase difference. Specifically, as shown in FIG. 3, when the examples of the present invention and the comparative examples are compared, it can be seen that the vibration structure of the examples of the present invention is smaller than the comparative examples. The small vibration structure means that the film thickness dependence of the phase difference is small. Therefore, like the reflective mask blank 10 of the present invention, the refractive index and the film thickness of the predetermined film constituting the phase shift film 15 satisfy the predetermined relationship as described in the above formulas (1) to (3). This makes it possible to obtain a reflective mask blank 10 having a phase shift film 15 having a small phase difference depending on the film thickness.

Reflective mask blank 10 of the present invention is preferably m is 2 or more under the above formula (2) or (3). By setting m to 2 or less, the phase shift film 15 can be made into a thin film. Therefore, the shadowing effect of the obtained reflective mask can be suppressed.

Reflective mask blank 10 according to the second embodiment of the present _{invention, n i} +1 <n _i, and is preferably _n 1 <1. This is because the reflection on the surface of the phase shift film 15 can be made smaller.

The reflective mask blank 10 of the second embodiment of the present invention preferably has N = 2. When N = 2, it is possible to obtain a phase shift film having a multilayer film having two unit thin films, and it is possible to give the phase shift film a reflection suppression function without impairing the ease of etching.

<Structure of Reflective Mask Blank 10 and Manufacturing Method thereof>
FIG. 1 is a schematic cross-sectional view for explaining the configuration of the reflective mask blank 10 for EUV lithography according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view for explaining the configuration of the reflective mask blank 10 for EUV lithography according to the second embodiment of the present invention. The reflective mask blank 10 of the present invention will be described with reference to FIGS. 1 and 2.

As shown in FIGS. 1 and 2, the reflective mask blank 10 includes a substrate 12 having a back surface conductive film 11 for an electrostatic chuck formed on a main surface on the back surface side of the substrate 12, and a main surface of the substrate 12. A multilayer reflective film 13 formed on the front surface (the main surface opposite to the side on which the back surface conductive film 11 is formed) and reflecting EUV light which is exposure light, and a multilayer on the multilayer reflective film 13. A protective film 14 formed of a material containing ruthenium (Ru) as a main component for protecting the reflective film 13, and a protective film 14 formed on the protective film 14 that absorbs EUV light and partially absorbs EUV light. It includes a phase shift film 15 for reflecting and shifting its phase.

In the present specification, for example, the description of "multilayer reflective film 13 formed on the main surface of the substrate 12" means that the multilayer reflective film 13 is arranged in contact with the surface of the substrate 12. In addition, the case where it means that another film is provided between the substrate 12 and the mask blank multilayer film 26 is also included. The same applies to other membranes. Further, in the present specification, for example, "the film A is arranged in contact with the film B" means that the film A and the film B are placed between the film A and the film B without interposing another film. It means that they are arranged so as to be in direct contact with each other.

Hereinafter, the configurations of the substrate 12 and each layer will be described.

In order to prevent distortion of the absorber film pattern due to heat during exposure by EUV light, a substrate 12 having a low coefficient of thermal expansion within the range of 0 ± 5 ppb / ° C. is preferably used. As a material having a low coefficient of thermal expansion in this range, for example, SiO _2- TiO _2- based glass, multi-component glass ceramics, or the like can be used.

Of both main surfaces of the substrate 12, the main surface on the side where the phase shift film 15 to be the transfer pattern of the reflective mask is formed has a high flatness so as to obtain at least pattern transfer accuracy and position accuracy. It has been processed. In the case of EUV exposure, the flatness is preferably 0.1 μm or less, more preferably 0.05 μm or less, and particularly preferably 0.05 μm or less in the region of 132 mm × 132 mm on the main surface on the side where the transfer pattern of the substrate 12 is formed. It is 0.03 μm or less. Further, of the two main surfaces of the substrate 12, the main surface on the side opposite to the side on which the phase shift film 15 is formed is formed with the back surface conductive film 11 for electrostatic chucking when set in the exposure apparatus. It is the surface. The flatness of the surface on which the back surface conductive film 11 is formed is preferably 1 μm or less, more preferably 0.5 μm or less, and particularly preferably 0.3 μm or less in a region of 142 mm × 142 mm.

In the present specification, the flatness is a value representing a surface warp (deformation amount) represented by TIR (Total Integrated Reading). For this value, the plane determined by the minimum square method with respect to the surface of the substrate 12 is the focal plane, and the highest position of the surface of the substrate 12 above the focal plane and the surface of the substrate 12 below the focal plane are used. It is the absolute value of the height difference from the lowest position of.

Further, in the case of EUV exposure, the surface smoothness required for the substrate 12 is such that the surface roughness of the main surface of the substrate 12 on the side where the phase shift film 15 to be the transfer pattern is formed is the root mean square roughness (2). RMS) is preferably 0.1 nm or less. The surface smoothness can be measured with an atomic force microscope (AFM).

Further, the substrate 12 preferably has high rigidity in order to prevent deformation of the film (multilayer reflective film 13 or the like) formed on the substrate 12 due to film stress. In particular, the substrate 12 preferably has a high Young's modulus of 65 GPa or more.

The multilayer reflective film 13 has a function of reflecting EUV light in a reflective mask for EUV lithography. The multilayer reflective film 13 is a multilayer film in which elements having different refractive indexes are periodically laminated.

In general, a thin film of a light element or a compound thereof (a high refractive index layer) which is a high refractive index material and a thin film of a heavy element or a compound thereof (a low refractive index layer) which is a low refractive index material are alternately 40. A multilayer film laminated for about 60 cycles is used as the multilayer reflective film 13. The multilayer film can have a structure in which a high-refractive index layer / a low-refractive index layer in which a high-refractive index layer and a low-refractive index layer are laminated in this order from the substrate 12 side is laminated in a plurality of cycles. Further, the multilayer film can have a structure in which a low refractive index layer and a high refractive index layer are laminated in this order from the substrate 12 side in a plurality of cycles with the laminated structure of the low refractive index layer / high refractive index layer as one cycle. .. The outermost surface layer of the multilayer reflective film 13, that is, the surface layer of the multilayer reflective film 13 on the opposite side of the substrate 12 is preferably a high refractive index layer. In the above-mentioned multilayer film, when the laminated structure of the high refractive index layer / low refractive index layer in which the high refractive index layer and the low refractive index layer are laminated in this order from the substrate 12 is laminated for a plurality of cycles, the uppermost layer has low refraction. It becomes a rate layer. Therefore, it is preferable to further form a high refractive index layer on the uppermost low refractive index layer to form the multilayer reflective film 13.

In the reflective mask blank 10 of the present invention, a layer containing Si can be adopted as the high refractive index layer. The material containing Si may be a Si compound containing B, C, N, and / or O in Si, in addition to Si alone. By using the layer containing Si as the high refractive index layer, a reflective mask for EUV lithography having excellent reflectance of EUV light can be obtained. Further, in the reflective mask blank 10 of the present invention, a glass substrate is preferably used as the substrate 12. Si is also excellent in adhesion to a glass substrate. Further, as the low refractive index layer, a simple substance of a metal selected from Mo, Ru, Rh, and Pt, and an alloy thereof are used. For example, as the multilayer reflective film 13 for EUV light having a wavelength of 13 to 14 nm, a Mo / Si periodic laminated film in which Mo films and Si films are alternately laminated, for example, about 40 to 60 cycles is used. The high-refractive index layer, which is the uppermost layer of the multilayer reflective film 13, is formed of silicon (Si), and a silicon oxide layer containing silicon and oxygen is formed between the uppermost layer (Si) and the protective film 14. It may be formed. This makes it possible to improve the mask cleaning resistance (the film peeling resistance of the phase shift film pattern).

The reflectance of the multilayer reflective film 13 alone is preferably, for example, 65% or more, and the upper limit is usually 73%. The film thickness and the number of cycles of each constituent layer of the multilayer reflective film 13 are appropriately selected so as to satisfy Bragg's law depending on the exposure wavelength. In the multilayer reflective film 13, a plurality of high refractive index layers and a plurality of low refractive index layers are present. Not all high index layers need to have the same film thickness. Also, not all low refractive index layers need to have the same film thickness. Further, the film thickness of the Si layer on the outermost surface of the multilayer reflective film 13 can be adjusted within a range that does not reduce the reflectance. The film thickness of Si (high refractive index layer) on the outermost surface can be, for example, 3 to 10 nm.

A method for forming the multilayer reflective film 13 is known in the art. For example, it can be formed by forming each layer of the multilayer reflective film 13 by an ion beam sputtering method. In the case of the above-mentioned Mo / Si periodic multilayer film, for example, by the ion beam sputtering method, a Si film having a film thickness of about 4 nm is first formed on the substrate 12 using a Si target, and then a film thickness of about 3 nm is formed using the Mo target. Mo film is formed. The film formation of the Si film and the Mo film is set as one cycle, and the layers are laminated for 40 to 60 cycles in total to form the multilayer reflective film 13 (the uppermost layer is a Si layer).

The reflective mask blank 10 of the present invention preferably has a protective film 14 between the multilayer reflective film 13 and the phase shift film 15.

As shown in FIGS. 1 and 2, the protective film 14 is formed on the multilayer reflective film 13 in order to protect the multilayer reflective film 13 from dry etching or cleaning liquid in the manufacturing process of the reflective mask for EUV lithography described later. Will be done. The protective film 14 is made of, for example, a material containing Ru (ruthenium) as a main component (main component: 50 atomic% or more). The material containing Ru as a main component is Ru metal alone, Ru alloy containing metals such as Nb, Zr, Y, B, Ti, La, Mo, Co, and / or Re in Ru, or N in those materials. It can be a material containing (nitrogen). Further, the protective film 14 has a laminated structure of three or more layers, the bottom layer and the top layer are layers made of the above-mentioned Ru-containing substance, and a metal or alloy other than Ru is placed between the bottom layer and the top layer. It can be intervening.

The film thickness of the protective film 14 is not particularly limited as long as it can function as the protective film 14. From the viewpoint of the reflectance of EUV light, the film thickness of the protective film 14 is preferably 1.5 to 8.0 nm, more preferably 1.8 to 6.0 nm.

As a method for forming the protective film 14, a known film forming method can be adopted without particular limitation. Specific examples of the method for forming the protective film 14 include a sputtering method and an ion beam sputtering method.

As shown in FIGS. 1 and 2, the reflective mask blank 10 of the first embodiment of the present invention includes a phase shift film 15 on the multilayer reflective film 13. The phase shift film 15 can be formed in contact with the multilayer reflective film 13. When the protective film 14 is formed, it can be formed in contact with the protective film 14.

As shown in FIG. 1, the phase shift film 15 of the reflective mask blank 10 according to the first embodiment of the present invention is a multilayer including a first layer 15a (upper layer 16) and a second layer 15b (lower layer 17). It is a membrane. In the first embodiment of the present invention, the refractive index and the film thickness of the first layer 15a and the second layer 15b at the light wavelength λ = 13.5 nm satisfy the relations of the above formulas (1) and (2).

As shown in FIG. 2, the phase shift film 15 of the reflective mask blank 10 according to the second embodiment of the present invention has a structure in which one first layer 15a and one second layer 15b are alternately laminated. Can have. In this case, the pair of first layer 15a and second layer 15b is referred to as "unit thin film 18". The unit thin film 18 can be a multilayer film of the first layer 15a to the Nth layer (N is an integer of 2 or more). In this case, a set of multilayer films of the first layer 15a to the Nth layer is the "unit thin film 18". In the second embodiment of the present invention, the refractive index and the film thickness of the first layer 15a to the Nth layer at the light wavelength λ = 13.5 nm satisfy the relationship of the above formula (3). Further, in order to further reduce the reflection at the surface of the phase shift film _15, it is preferable to satisfy the _{n i} +1 <n i, and _n 1 <1 relationship. Here, n _i and n ₁ are the refractive indexes of the i-th layer (i is an arbitrary integer of 1 or more and N or less) and the exposure wavelength λ of the first layer at 13.5 nm. Further, in order to achieve both ease of etching and a reflection suppression function of the phase shift film, it is preferable that N, which is the number of layers of the multilayer film constituting the unit thin film 18, is 2.

In the reflective mask blank 10 of the present invention, the uppermost layer 16 (first layer 15a) of the phase shift film 15 is made of a material containing a silicon compound, and the lower layer 17 (second layer 15b) is made of a material containing a tantalum compound. Is preferable. In particular, in the case of the reflective mask blank 10 of the first embodiment shown in FIG. 1, it is preferable to use the uppermost layer 16 and the lower layer 17 made of these materials. The uppermost layer 16 refers to a layer located at a position farthest from the multilayer reflective film 13 among the layers constituting the phase shift film 15. A desired phase shift amount can be obtained by including the uppermost layer 16 made of a material containing a silicon compound and the lower layer 17 made of a material containing a tantalum compound in the phase shift film 15.

As the thin film of the silicon compound used for the uppermost layer 16 of the phase shift film 15, the SiO ₂ film can be mentioned. Since the _{refractive index of the SiO 2} film at the light wavelength λ = 13.5 nm is 0.978, it is close to 1. _{Therefore, by using the SiO 2} film for the uppermost layer 16 of the phase shift film 15, it is possible to reduce the reflection from the uppermost layer 16 of the phase shift film 15.

As a thin film of the tantalum compound used for the lower layer 17 of the phase shift film 15, a TaN film can be mentioned. Since the refractive index of the TaN film at the light wavelength λ = 13.5 nm is about 0.949, it is close to the refractive index of the _{SiO 2 film.} Therefore, by using it in combination with _{the SiO 2} film of the uppermost layer 16, it is possible to reduce the reflection from the interface between _{the SiO 2 film and the TaN film.}

The first layer 15a of the reflective mask blank 10 of the present invention can contain at least one metal material selected from Ta and Cr. In particular, in the case of the reflective mask blank 10 of the second embodiment shown in FIG. 2, it is preferable to use the uppermost layer 16 made of these materials.

FIG. 5 shows the relationship between the refractive index n of the metal material at a wavelength of 13.5 nm and the extinction coefficient k. Examples of the material forming the first layer 15a include Ta (refractive index n at a wavelength of 13.5 nm = about 0.943, extinction coefficient k = about 0.041) or Cr (refractive index n = about 0.041). 0.932, extinction coefficient k = about 0.039).

For example, Ta has a small extinction coefficient of EUV light and can be easily dry-etched with a fluorine-based gas or a chlorine-based gas. Therefore, Ta is a material for the phase shift film 15 having excellent workability. Further, by adding B, Si and / or Ge or the like to Ta, an amorphous material can be easily obtained, and the smoothness of the phase shift film 15 can be improved. Further, if N and / or O is added to Ta, the resistance of the phase shift film 15 to oxidation is improved. Therefore, by using a material obtained by adding N and / or O to Ta for the uppermost layer 16 of the phase shift film 15, it is possible to obtain an effect that the cleaning resistance is excellent and the stability over time can be improved.

As the material for forming the first layer 15a, it is preferable, but not limited to, a kind of metal material is selected. As the material for forming the first layer 15a, two or more kinds of metal materials may be selected.

In the reflective mask blank 10 of the present invention, it is preferable that the second layer 15b contains at least one metal material selected from Mo, Ru, Pt, Pd, Ag and Au. In particular, in the case of the reflective mask blank 10 of the second embodiment, it is preferable to use the lower layer 17 made of these materials. The lower layer 17 made of these materials is more preferably used in combination with the first layer 15a containing at least one metal material selected from Ta and Cr. When the second layer 15b contains a predetermined metal material, an appropriate refractive index and extinction coefficient can be obtained as the second layer 15b of the phase shift film 15.

Specifically, the metal material forming the second layer 15b is a metal material different from that of the first layer 15a, and the refractive index n at a wavelength of 13.5 nm is the refractive index of the material forming the first layer 15a. It is preferable to select from metal materials smaller than n. For example, as the metal material for forming the second layer 15b, Mo (refractive index n = about 0.921, extinction coefficient k = about 0.006), Ru (refractive index n = about 0.888). , Extinction coefficient k = about 0.017), Pt (refractive index n = about 0.891, extinction coefficient k = about 0.060), Pd (refractive index n = about 0.876, extinction coefficient k = about 0.046), Ag (refractive index n = about 0.890, extinction coefficient k = about 0.079), or Au (refractive index n = about 0.899, extinction coefficient k = Approximately 0.052) can be mentioned.

For example, Mo has a concern about cleaning resistance by itself, but its cleaning resistance can be improved by forming a multilayer film in combination with the above-mentioned layer containing Ta or Cr. Further, since Mo has a refractive index n smaller than 0.95 in EUV light, it is possible to obtain a phase shift effect with a thin film thickness. Further, since the extinction coefficient k is small, the reflectance of EUV light is high, and the film material is easy to obtain contrast (resolution) due to the phase shift effect.

Further, Ru alone has a low etching rate with respect to various etching gases and is highly difficult to process. However, by forming a multilayer film in combination with the above-mentioned layer containing Ta or Cr, the entire phase shift film 15 is formed. Workability can be improved. Further, since the refractive index n of the EUV light is smaller than 0.95, it is possible to obtain a phase shift effect with a thin film thickness, and since the extinction coefficient k is small, the reflectance of the EUV light becomes high and the phase shift occurs. It is a film material that makes it easy to obtain the contrast (resolution) due to the effect.

Pt and Pd are film materials having a low etching rate and having difficulty in processing, but since the refractive index n in EUV light is smaller than 0.95, it is possible to obtain a phase shift effect with a thin film thickness.

As the material for forming the second layer 15b, it is preferable, but not limited to, a kind of metal material is selected. Two or more kinds of metal materials may be selected as the material for forming the second layer 15b.

The metal material that can be used as the material for forming the first layer 15a and the second layer 15b is preferably a simple substance of the metal. However, a material containing the metal can be used on condition that the characteristics such as the phase shift effect of the phase shift film 15 are not affected.

As the material containing Ta used as the material for forming the first layer 15a, for example, TaB alloy containing B as a main component of Ta, TaSi alloy containing Si as a main component of Ta, and Ta are mainly used. Ta alloys containing other transition metals (for example, Pt, Pd and Ag) as components, Ta metals, and Ta-based compounds obtained by adding N, O, H, C or the like to these alloys can be used. Materials containing Cr include CrSi alloys containing Cr as a main component and Si as a main component, Cr alloys containing Cr as a main component and other transition metals (for example, Pt, Pd, Ag), Cr metals, and alloys thereof. A Cr-based compound or the like to which N, O, H, C or the like is added can be used.

The Mo-containing material for forming the second layer 15b is a Mo alloy containing Mo as a main component and metals such as Nb, Zr, Y, B, Ti, La, Ru, Co and / or Re. Etc. can be used. As the material containing Ru for forming the second layer 15b, a Ru alloy containing Ru as a main component and containing metals such as Nb, Zr, Y, B, Ti, La, Mo, Co and / or Re is used. be able to. Further, as the material containing Ru, a Ru alloy or Ru metal, and a Ru-based compound obtained by adding N, H and / or C to those alloys can be used. As the material containing Pt for forming the second layer 15b, a Pt alloy containing Pt as a main component and a metal such as Nb, Zr, Y, B, Ti, La, Mo, Co and / or Re may be used. Can be used. As the material containing Pd for forming the second layer 15b, a Pd alloy containing Pd as a main component and containing metals such as Nb, Zr, Y, B, Ti, La, Mo, Co and / or Re is used. be able to. As the material containing Ag for forming the second layer 15b, an Ag alloy containing Ag as a main component and a metal such as Nb, Zr, Y, B, Ti, La, Mo, Co and / or Re may be used. Can be used. As the material containing Au for forming the second layer 15b, an Au alloy containing Au as a main component and a metal such as Nb, Zr, Y, B, Ti, La, Mo, Co and / or Re may be used. Can be used.

The lowermost layer of the phase shift film 15 and the layer above it are the second layer 15b containing other metal materials that do not overlap with the material for forming the protective film 14 formed under the phase shift film 15 (Ru protective film \). Other than Ru \ ...). For example, when the lowermost layer of the phase shift film 15 is a second layer 15b containing Ru and the protective film 14 is formed of a material containing Ru as a main component (Ru protective film \ Ru ...), both are common. This combination should be avoided as it is formed by Ru and overlaps. In this case, the lowermost layer of the phase shift film 15 is, for example, a second layer 15b containing Mo having high etching selectivity with respect to Ru of the protective film 14 (Ru protective film \ Mo \ ...). High-definition patterning is possible, and damage to the protective film 14 can be suppressed.

The uppermost layer 16 of the phase shift film 15 is the uppermost layer 16 (first layer 15a) containing a metal material determined according to the etching selectivity. For example, when the first layer 15a containing Ta or Cr and the second layer 15b containing Mo are unit thin films of the phase shift film 15, the uppermost layer 16 is the first layer 15a containing Ta or Cr. Therefore, it is possible to improve the cleaning resistance of the entire phase shift film 15 before pattern formation.

When the first layer 15a containing Ta and the second layer 15b containing Mo are formed as a unit thin film of the phase shift film 15 on the protective film 14 containing Ru as a main component, the bottom layer of the phase shift film 15 is formed. Can be the second layer 15b containing Mo, and the uppermost layer 16 of the phase shift film 15 can be the first layer 15a containing Ta (Ru protective film \ Mo \ Ta ... Mo \ Ta). Since Mo has high etching selectivity with respect to Ru of the protective film 14, high-definition patterning is possible, damage to the protective film 14 can be suppressed, and cleaning resistance before and after pattern formation is improved. Can be improved.

The lowermost layer of the phase shift film 15 may be the first layer 15a containing Ta (Ru protective film 14 \ Ta \ Mo \ Ta \ Mo ... \ Ta). In this case, in addition to the unit thin film 18 (Ta of the first layer 15a and Mo of the second layer 15b), the first layer 15a containing Ta is further formed on the protective film 14.

The unit thin film 18 constituting the phase shift film 15 is formed of two or more thin films. The Nth layer (N is an integer of 2 or more) of the unit thin film 18 in the phase shift film 15 is formed of the same metal material. For example, the phase shift film 15 can be composed of a first layer 15a containing Ta, a second layer 15b containing Mo, and a third layer (not shown) containing Ru (Ru protective film 14 \ Ta). \ Ru \ Mo \ Ta ... Ru \ Mo \ Ta). In this case, a thin film containing Ta is further formed in contact with the Ru protective film 14. In this case, the content ratio of the Ta layer in the phase shift film 15 can be reduced, so that the phase shift effect can be easily obtained.

The phase shift film 15 can be formed by a known film forming method such as an ion beam sputtering method. For example, in the case of the ion beam sputtering method, two targets formed of the metal materials of the first layer 15a and the second layer 15b are prepared, and in the atmosphere of an inert gas such as Ar gas, among the two targets, The first layer 15a and the second layer 15b can be formed by alternately irradiating the beams one by one.

The phase shift film 15 made of such a multilayer film has a reflectance of 1 to 30% for EUV light, and the phase difference between the reflected light from the phase shift film 15 and the reflected light from the multilayer reflecting film 13 is 170 to 190. It is formed to be a degree.

The film thickness of the phase shift film 15 is determined according to the type of metal material used for each layer and the design value of the reflectance of EUV light, and the refractive index and the film thickness satisfy a predetermined relationship. For example, the film thickness of the phase shift film 15 is 100 nm or less, preferably 30 to 90 nm. With the phase shift film 15 formed with such a thin film thickness, for example, in the case of EUV exposure, the shadowing effect can be reduced. Further, the film thickness of each of the first layer 15a, the second layer 15b, etc. in the phase shift film 15 made of a multilayer film is the wavelength of EUV light, the number of layers of the multilayer film, the type of material of each layer, its cleaning resistance and processing. It is determined by an appropriate combination of film thickness in consideration of characteristics such as properties.

The film thickness ratio of the first layer 15a and the second layer 15b of the unit thin film 18 is determined so that the refractive index and the film thickness of each layer satisfy a predetermined relationship as described in the above formulas (1) to (3). .. The film thickness ratio of the first layer 15a and the second layer 15b can be appropriately determined so as to satisfy a predetermined relationship depending on the metal material used. For example, in the case of Ta: Mo, it is preferably 20: 1 to 1: 5. If the Ta layer is thick and the Mo layer is too thin, there is a disadvantage that the film thickness of the entire phase shift film 15 for obtaining the phase shift effect becomes thick. Further, since Mo is easily oxidized, if the Ta layer is thin and the Mo layer is too thick, there is a disadvantage that the cleaning resistance of the entire phase shift film 15 is lowered.

It is preferable that the phase shift film 15 made of the multilayer film is continuously formed without being exposed to the atmosphere from the start of the film formation to the end of the film formation. For example, the phase shift film 15 is preferably formed by an ion beam sputtering method useful for continuously forming each layer (for example, the first layer 15a and the second layer 15b) with a very thin film thickness. .. However, it can also be formed by a known method such as a DC sputtering method and an RF sputtering method.

For example, when the ion beam sputtering method is used, each layer of the phase shift film 15 such as Ta \ Mo (for example, the first layer) is formed from the film formation of the multilayer reflective film 13 of MoSi to the film formation of the protective film 14 of Ru. The film formation of the layer 15a and the second layer 15b) can be performed without taking out from the sputtering apparatus. Since they are not exposed to the atmosphere during the film formation, it is advantageous in that the number of defects in each film can be suppressed.

If the surface of the phase shift film 15 is not smooth, the edge roughness of the phase shift film pattern becomes large, and the dimensional accuracy of the pattern may deteriorate. Therefore, the surface roughness of the phase shift film 15 after film formation is preferably a root mean square roughness (RMS) of 0.5 nm or less, more preferably 0.4 nm or less, and 0. It is more preferably 3 nm or less.

In the reflective mask blank of the present invention, an etching mask film (not shown) can be further formed on the phase shift film 15. The etching mask film has etching selectivity with respect to the uppermost layer 16 of the multilayer reflective film 13, and the uppermost layer 16 of the phase shift film 15 can be etched with an etching gas for the first layer 15a (etching selectivity). Is made of material. Specifically, the etching mask film is formed of, for example, a material containing Cr or Ta. Examples of the material containing Cr include elemental Cr metals and Cr-based compounds obtained by adding one or more elements selected from elements such as O, N, C, H, and B to Cr. Materials containing Ta include elemental Ta metals, TaB alloys containing Ta and B, Ta alloys containing Ta and other transition metals (eg, Hf, Zr, Pt, W), Ta metals, and their alloys. Examples thereof include Ta-based compounds to which N, O, H and / or C are added. Here, when the uppermost layer 16 (first layer 15a) of the phase shift film 15 contains Ta, a material containing Cr is selected as the material for forming the etching mask film. When the uppermost layer 16 (first layer 15a) of the phase shift film 15 contains Cr, it is preferable that a material containing Ta is selected as the material for forming the etching mask film.

The etching mask film can be formed by a known method such as a DC sputtering method and an RF sputtering method.

The film thickness of the etching mask film is preferably 5 nm or more from the viewpoint of ensuring the function as a hard mask. In the process of manufacturing the reflective mask, the etching mask film is removed at the same time as the phase shift film 15 by the fluorine-based gas in the etching step of the phase shift film 15. Therefore, it is preferable that the etching mask film has a film thickness substantially equal to that of the phase shift film 15. Considering the film thickness of the phase shift film 15, the film thickness of the etching mask film is preferably 5 nm or more and 20 nm or less, preferably 5 nm or more and 15 nm or less.

As shown in FIGS. 1 and 2, a back surface conductive film 11 for an electrostatic chuck is formed on the back surface side of the substrate 12 (opposite the formation surface of the multilayer reflective film 13). The electrical characteristics required for the back surface conductive film 11 for an electrostatic chuck are usually a sheet resistance of 100 Ω / sq or less. The back surface conductive film 11 can be formed by, for example, a magnetron sputtering method or an on-beam sputtering method using a target of a metal such as chromium or tantalum or an alloy thereof. When the back surface conductive film 11 is formed of, for example, CrN, a film can be formed by the above-mentioned sputtering method in a gas atmosphere containing N such as nitrogen gas using a Cr target. The film thickness of the back surface conductive film 11 is not particularly limited as long as it satisfies the function for the electrostatic chuck, but is usually 10 to 200 nm.

The configuration of the reflective mask blank 10 according to the embodiment has been described above for each layer.

The reflective mask blank 10 of the present invention is not limited to the above-described embodiment. For example, the reflective mask blank 10 of the present invention can include a resist film having a function as an etching mask on the phase shift film 15. Further, the reflective mask blank 10 of the present invention can include the phase shift film 15 in contact with the multilayer reflective film 13 without providing the protective film 14 on the multilayer reflective film 13.

<Reflective mask and its manufacturing method>
The present invention is a reflective mask having a phase shift film pattern in which the phase shift film 15 in the above-mentioned reflective mask blank 10 of the present invention is patterned. The reflective mask of the present invention can be produced by using the reflective mask blank 10 of the present invention described above. A photolithography method capable of performing high-definition patterning is most suitable for manufacturing a reflective mask for EUV lithography.

In this embodiment, a method of manufacturing a reflective mask using a photolithography method will be described by exemplifying a case where the reflective mask blank 10 shown in FIG. 1 is used.

First, a resist film (not shown) is formed on the outermost surface of the reflective mask blank 10 shown in FIG. 1 (the uppermost layer 16 of the phase shift film 15). The film thickness of the resist film can be, for example, 100 nm. Next, a desired pattern is drawn (exposed) on the resist film, and further developed and rinsed to form a predetermined resist pattern (not shown).

Next, the phase shift film 15 made of the multilayer film is dry-etched with an etching gas containing a fluorine-based gas such _{as SF 6 using a resist pattern (not shown) as a mask to obtain a phase shift film pattern (not shown).} (Not shown) is formed. In this step, the resist pattern (not shown) is removed.

Here, the etching rate of the phase shift film 15 depends on the conditions such as the material forming the phase shift film 15 and the etching gas. In the case of the phase shift film 15 composed of multilayer films of different materials, the etching rate varies slightly for each layer of different materials. However, since the film thickness of each layer is small, it is considered that the etching rate in the entire phase shift film 15 is substantially constant.

The phase shift film pattern is formed by the above steps. Each layer of the phase shift film 15 made of a multilayer film (for example, the first layer 15a and the second layer 15b) can be continuously etched by dry etching with one kind of etching gas. In that case, the effect of process simplification can be obtained. Next, wet cleaning is performed using an acidic or alkaline aqueous solution to obtain a reflective mask for EUV lithography that has achieved high reflectance.

As the etching gas, in addition to SF ₆ , CHF ₃ , CF ₄ , C ₂ F ₆ , C ₃ F ₆ , C ₄ F ₆ , C ₄ F ₈ , CH ₂ F ₂ , CH ₃ F, C ₃ F _{Fluorine gas such as 8} and F, and a mixed gas containing these fluorine gas and O ₂ in a predetermined ratio can be used. When etching each layer of the phase shift film 15 made of a multilayer film (for example, the first layer 15a and the second layer 15b), another gas may be used as long as it is a gas useful for processing. As other gases, for example, _{chlorine-based gas such as Cl 2} , SiCl ₄ , CHCl ₃ , CCl ₄ , BCl ₃ and a mixed gas thereof, a mixed gas containing chlorine-based gas and He in a predetermined ratio, and a chlorine-based gas. And at least one selected from the group consisting of a halogen gas containing at least one selected from a mixed gas containing Ar in a predetermined ratio, a fluorine gas, a chlorine gas, a bromine gas and an iodine gas, and a hydrogen halide gas. More than that. Further, a mixed gas containing these gases and an oxygen gas and the like can be mentioned.

Further, when the phase shift film has a two-layer structure of the uppermost layer 16 and the lower layer 17 and the lower layer 17 is formed of a material having etching resistance to the uppermost layer 16, two types from the above-mentioned etching gas are used. It is also possible to perform stepwise dry etching.

Since the above-mentioned reflective mask blank 10 is used for manufacturing the reflective mask of the present invention, it is possible to obtain a reflective mask having a phase shift film 15 having a small phase difference depending on the film thickness.

<Manufacturing of semiconductor devices>
The present invention is a method for manufacturing a semiconductor device, which comprises a pattern forming step of forming a pattern on a semiconductor substrate 12 by using the above-mentioned reflective mask of the present invention.

Using the above-mentioned reflective mask of the present invention, a transfer pattern based on the phase shift film pattern of the reflective mask can be formed on a semiconductor substrate by EUV lithography. After that, by going through various other steps, it is possible to manufacture a semiconductor device in which various patterns and the like are formed on the semiconductor substrate. A known pattern transfer device can be used to form the transfer pattern.

According to the method for manufacturing a semiconductor device of the present invention, a reflective mask having a phase shift film pattern having a small phase difference depending on the film thickness can be used, so that a semiconductor device having a fine and highly accurate transfer pattern can be used. Can be manufactured.

Hereinafter, the present invention will be described based on each embodiment.

(Example 1)
<Manufacturing of reflective mask blank 10>
The reflective mask blank 10 of Example 1 was produced by the method described below. The reflective mask blank 10 of Example 1 has a structure of CrN back surface conductive film \ substrate 12 \ MoSi multilayer reflective film 13 \ Ru protective film 14 \ phase shift film 15.

First, the SiO _2- TiO ₂ system glass substrate 12 was prepared.

A back surface conductive film 11 made of CrN was formed on the back surface of the substrate 12 by a magnetron sputtering method under the following conditions. That is, using a Cr target, a back surface conductive film was formed so as to have a film thickness of 20 nm in _{an Ar + N 2} gas atmosphere (Ar: N _{2 = 90%: N: 10%).}

Next, the multilayer reflective film 13 was formed on the main surface of the substrate 12 on the side opposite to the side on which the back surface conductive film 11 was formed. As the multilayer reflective film 13 formed on the substrate 12, a Mo / Si periodic multilayer reflective film 13 suitable for EUV light of 13.5 nm was adopted. The multilayer reflective film 13 was formed by alternately laminating Mo layers and Si layers on a substrate 12 by ion beam sputtering (Ar gas atmosphere) using a Mo target and a Si target. First, a Si film was formed with a film thickness of 4.2 nm, and then a Mo film was formed with a film thickness of 2.8 nm. This was set as one cycle, and the layers were laminated for 40 cycles in the same manner, and finally a Si film was formed with a film thickness of 4.0 nm to form a multilayer reflective film 13 (total film thickness: 284 nm).

Subsequently, a protective film 14 containing Ru was formed on the Si film on the uppermost layer of the multilayer reflective film 13 by ion beam sputtering (Ar gas atmosphere) using a Ru target with a film thickness of 2.5 nm.

Next, a phase shift film 15 having a two-layer structure was formed on the protective film 14 by the following method.

First, the lower layer 17 was formed as follows. That is, _{reactive sputtering using a Ta target was performed in a Xe + N 2} gas atmosphere (Xe: N ₂ = 66%: 34%) to form a lower layer 17 made of a TaN film having a film thickness of 63 nm. Next, the uppermost layer 16 was formed as follows. That is, _{RF sputtering using a SiO 2} target was performed in an Ar gas atmosphere to form an uppermost layer 16 made _{of a SiO 2} film having a film thickness of 4 nm on the lower layer 17.

Table 1 shows the refractive index (n ₁ ) and film thickness (d _{1 ) of the SiO 2} film of the uppermost layer 16 (first layer 15a) of the phase shift film 15 of Example 1, and the lower layer 17 (second layer 15b). _{The refractive index (n 2} ) and the film thickness (d ₂ ) of the TaN film of No. 1 are shown. Since the phase shift film 15 of the first embodiment is composed of a pair of the uppermost layer 16 and the lower layer 17, the period is 1. The number of this cycle is the same in Examples 2 to 4 and Comparative Examples 1 and 2 below.

(Example 2)
As Example 2, the same as in Example ₁ except that the film thickness d _{1 of the uppermost layer 16 (SiO 2 film) of the phase shift film 15 is 3.375 nm and the film thickness d 2} of the TaN film of the lower layer 17 is 60 nm. , A reflective mask blank 10 was produced. Table 1 shows the refractive index (n ₁ ) and film thickness (d _{1 ) of the SiO 2} film of the uppermost layer 16 of the phase shift film 15 of Example 2, _{and the refractive index (n 2} ) and film of the TaN film of the lower layer 17. The thickness (d ₂ ) is shown.

(Example 3)
As Example 3, the same as in Example 1 except that _{the film thickness d 1 of the uppermost layer 16 (SiO 2} film) of _{the phase shift film 15 is 3.7 nm and the film thickness d 2} of the TaN film of the lower layer 17 is 60 nm. , A reflective mask blank 10 was produced. Table 1 shows the refractive index (n ₁ ) and film thickness (d _{1 ) of the SiO 2} film of the uppermost layer 16 of the phase shift film 15 of Example 3, _{and the refractive index (n 2} ) and film of the TaN film of the lower layer 17. The thickness (d ₂ ) is shown.

(Example 4)
As Example 4, the same as in Example 1 except that _{the film thickness d 1 of the uppermost layer 16 (SiO 2} film) of _{the phase shift film 15 is 18 nm and the film thickness d 2} of the TaN film of the lower layer 17 is 61.5 nm. , A reflective mask blank 10 was produced. Table 1 shows the refractive index (n ₁ ) and film thickness (d _{1 ) of the SiO 2} film of the uppermost layer 16 of the phase shift film 15 of Example 4, _{and the refractive index (n 2} ) and film of the TaN film of the lower layer 17. Indicates the thickness (d ₂₎

(Comparative Example 1)
As Comparative Example 1, the reflective mask is the same as in Example 1 except that _{the uppermost layer 16 (SiO 2} film) of the phase shift film 15 is not provided and the film thickness d _{2 of the lower layer 17 (TaN film) is 65 nm.} Blank 10 was made. _{Table 1 shows the refractive index (n 2} ) and the film thickness (d ₂ ) of the TaN film of the lower layer 17 of the phase shift film 15 of Comparative Example 1.

(Comparative Example 2)
As Comparative Example 2 , the film thickness d ₁ of the uppermost layer 16 (SiO ₂ film) of the phase shift film 15 was 1.5 nm, and the film thickness d ₂ of the lower layer 17 (TaN film) was 65 nm. Similarly, a reflective mask blank 10 was produced. Table 1 shows the refractive index (n ₁ ) and film thickness (d _{1 ) of the SiO 2} film of the uppermost layer 16 of the phase shift film 15 of Comparative Example 2 _{, and the refractive index (n 2} ) and film of the TaN film of the lower layer 17. The thickness (d ₂ ) is shown.

(Evaluation of Examples 1 to 4 and Comparative Examples 1 to 2)
Table 2 shows the product _{of n 1} and d ₁ of the reflective mask blanks 10 of Examples 1 to 4 _{(n 1} · d ₁ ), and λ / when the exposure wavelengths λ = 13.5 nm and m = 0. The values of 4 × (2m + 1) −1.5 (nm) and λ / 4 × (2m + 1) +1.5 (nm) are shown. As is clear from Table 2, n ₁ and n ₂ of Examples 1 to 4 satisfy the relationship of the above formula (1). _{Further, n 1} and d ₁ of Examples 1 to 3 satisfy the relationship of the above formula (2) in the case of and m = 0. Further, n ₁ and d ₁ of Example 4 satisfy the relationship of the above-mentioned equation (2) in the case of m = 2.

As shown in Table 1, since the reflective mask blank 10 of Comparative Example 1 is a phase shift film 15 composed of only one layer of the lower layer 17, n ₁ and d ₁ cannot be conceived. Therefore, the relationship between the above equations (1) and (2) is not satisfied.

Table 2 shows the product _{of n 1} and d ₁ of Comparative Example 2 _{(n 1} · d ₁ ), and λ / 4 × (2 m + 1) -1 when the exposure wavelengths λ = 13.5 nm and m = 0. The values of 5 (nm) and λ / 4 × (2m + 1) + 1.5 (nm) are shown. As apparent from Table 2, _n 1 · _{d 1} of Comparative Example 2, the lower limit lambda / 4 × of formula (2) described above in the case of m = 0 (2m + 1) -1.5 (nm) value less than Is. Since m is an integer of zero or more, _{the product of n 1} and d ₁ in Comparative Example 2 cannot take a value satisfying the above equation. Therefore, Comparative Example 2 does not satisfy the relationship of the above equation (2).

FIG. 3 shows the relationship between the thickness of the phase shift film 15 of Examples 1 to 4 and Comparative Examples 1 and 2 obtained by simulation and the phase difference. Here, the phase difference is the light in which a part of the exposure light incident on the phase shift film pattern is reflected by the multilayer reflection film 13 and the light on which the exposure light incident on the portion without the phase shift film pattern is reflected. Means the phase difference between and. As shown in FIG. 3, in Examples 1 to 4 and Comparative Examples 1 and 2, the reflected light from the outermost surface of the phase shift film 15 and the reflected light from the multilayer reflective film 13 existing under the phase shift film 15. It can be understood that the vibration structure is generated in the film thickness dependence of the phase difference due to the interference with.

FIG. 4 shows the relationship between the thickness of the phase shift film 15 of Examples 1 to 4 and Comparative Examples 1 and 2 near the phase difference of 180 degrees and the phase difference. FIG. 4 is an enlarged view of Example 1 and Comparative Example 1 of FIG. FIG. 4 shows a film thickness range in which the phase difference variation is 10 degrees (175 degrees to 185 degrees) in Example 1 and Comparative Example 1. In Example 1, since the film thickness at 175 degrees was 64.9 nm and the film thickness at 185 degrees was 69.5 nm, the film thickness range at which the phase difference variation was 10 degrees was 4.6 nm. Further, in Comparative Example 1, since the film thickness at 175 degrees was 64.6 nm and the film thickness at 185 degrees was 65.4 nm, the film thickness range at which the phase difference variation was 10 degrees was 0.8 nm. .. Similarly, in Examples 2 to 4 and Comparative Example 2, when the film thickness range in which the phase difference variation was 10 degrees was calculated, the values were as shown in Table 2. The film thickness range in which the phase difference variation is 10 degrees selects the region in which the phase difference is the best within the range of 160 degrees to 200 degrees, and may include an extreme value.

As is clear from Table 2, in Examples 1 to 4, the film thickness range in which the phase difference variation selected from the range of the phase difference of 160 degrees to 200 degrees is 10 degrees is 4.0 nm or more, which is wide. The range is shown. Further, in Example 1, since the extremum was not included in the region where the phase difference variation was 10 degrees, the phase difference variation was the most stable among Examples 1 to 4. On the other hand, the film thickness range in which the phase difference variation selected from the range of the phase difference of 160 degrees to 200 degrees of Comparative Examples 1 and 2 is 10 degrees is 0.8 nm, which is a narrow range. This means that in the case of the reflective mask blanks 10 of Examples 1 to 4, the film thickness dependence of the phase difference at the desired phase shift of 160 degrees to 200 degrees is small.

(Example 5) (When the phase shift film 15 is a multilayer film)
Next, as Example 5, a reflective mask blank 10 was manufactured in the same manner as in Example 1 except that the phase shift film 15 made of a multilayer film was formed on the protective film 14 by the following method.

In the film formation of the phase shift film 15 of Example 5, the Mo layer (second layer 15b) was first formed with a film thickness of 2.4 nm by ion beam sputtering (Ar gas atmosphere) using a Mo target and a Ta target. A film was formed, and then a Ta layer (first layer 15a) was formed with a film thickness of 2.4 nm (film thickness ratio 1: 1). This is set as one cycle, and 10 cycles are continuously formed to form a Ta layer (first layer 15a), and the phase shift film 15 having a total film thickness of 48 nm (film configuration: Mo \ Ta \ Mo). \ Ta \ ... Mo \ Ta) was formed. The phase shift film 15 of Example 5 has a structure having 10 cycles of a unit thin film 18 composed of a Ta layer (first layer 15a) and a Mo layer (second layer 15b).

_{Table 3 shows the refractive index (n 1} ) and film thickness (d ₁ ) of the Ta film of the uppermost layer 16 of the phase shift film 15 of Example 5, _{and the refractive index (n 2} ) of the Mo film formed as the lower layer 17. The film thickness (d ₂ ) is shown.

(Example 6)
As Example 6, a reflective mask blank 10 was produced in the same manner as in Example 5, except that the number of cycles of the phase shift film 15 was 15. Therefore, the phase shift film 15 of Example 5 has a structure having 15 cycles of the unit thin film 18 composed of the Ta layer (first layer 15a) and the Mo layer (second layer 15b). _{Table 3 shows the refractive index (n 1} ) and film thickness (d ₁ ) of the Ta film of the uppermost layer 16 of the phase shift film 15 of Example 6, _{and the refractive index (n 2} ) of the Mo film formed as the lower layer 17. The film thickness (d ₂ ) is shown.

(Example 7)
As Example 7, a reflective mask blank 10 was produced in the same manner as in Example 5, except that the number of cycles of the phase shift film 15 was set to 20. Therefore, the phase shift film 15 of Example 5 has a structure having 20 cycles of the unit thin film 18 composed of the Ta layer (first layer 15a) and the Mo layer (second layer 15b). _{Table 3 shows the refractive index (n 1} ) and film thickness (d ₁ ) of the Ta film of the uppermost layer 16 of the phase shift film 15 of Example 7, _{and the refractive index (n 2} ) of the Mo film formed as the lower layer 17. The film thickness (d ₂ ) is shown.

(Evaluation of Examples 5 to 7)
Table 4, the product of _{n 1} and _{d 1} of the reflective mask blank of Example 5 to 7 _(n 1 _· d 1), the product of the _{n 2} and _{d 2 (n 2 · d 2} ), n 1 · The sum of d ₁ and n ₂ · d ₂ and λ / 4 × (2m + 1) -1.5 (nm) and λ / 4 × (2m + 1) + 1 when the exposure wavelengths λ = 13.5 nm and m = 2. A value of .5 (nm) is shown. As is clear from Table 4, _{the sum of n 1} · d ₁ and n ₂ · d ₂ of Examples 5 to 7 satisfies the relationship of the above formula (3) in the case of m = 2. It should be noted that Examples 5 to 7 also satisfy the relationship of _{n i + 1} < _ni (that is, n ₂ <n ₁ ) and n _{1 <1.}

FIG. 6 shows the relationship between the thickness of the phase shift film 15 of Examples 5 to 7 and the phase difference. Further, as in the case of Examples 1 to 4, the film thickness of the reflective mask blank 10 of Examples 5 to 7 has a phase difference variation of 10 degrees selected from the range of the phase difference of 160 degrees to 200 degrees. The range was calculated. The results are shown in Table 4.

As is clear from Table 4, the film thickness range in which the phase difference variation selected from the range of the phase difference of 160 degrees to 200 degrees of Examples 5 to 7 is 10 degrees is 4.9 nm or more, and the examples. As with the cases 1 to 4, a wide range was shown. This means that in the case of the reflective mask blank 10 of Examples 5 to 7, the film thickness dependence of the phase difference at the desired phase shift of 160 degrees to 200 degrees is small. Further, in Examples 5 to 7, since the extremum was not included in the region where the phase difference variation was 10 degrees, the phase difference variation was particularly stable as in Example 1.

<Making a reflective mask>
Next, a resist film was formed with a film thickness of 100 nm on the phase shift film 15 of the reflective mask blanks 10 of Examples 1 to 7 manufactured as described above, and a resist pattern was formed by drawing and developing. Then, using this resist pattern as a mask, the phase shift film 15 was dry-etched using a _{fluorine-based SF 6 gas to form a phase shift film pattern.} Then, the resist pattern was removed to prepare a reflective mask.

<Manufacturing of semiconductor devices>
The reflective mask manufactured by using the mask blank substrate 12 of Examples 1 to 7 was set in an EUV scanner, and EUV exposure was performed on a wafer having a film to be processed and a resist film formed on the semiconductor substrate 12. .. Then, by developing this exposed resist film, a resist pattern was formed on the semiconductor substrate 12 on which the film to be processed was formed.

As the reflective mask manufactured by using the mask blank substrate 120 of Examples 1 to 7, a reflective mask having a phase shift film 15 having a small phase difference depending on the film thickness can be used, so that it is fine and high. It was possible to manufacture a semiconductor device having an accurate transfer pattern.

This resist pattern is transferred to the film to be processed by etching, and through various steps such as insulating film, forming a conductive film, introducing a dopant, or annealing, a semiconductor device having desired characteristics is manufactured with a high yield. We were able to.

10 Reflective mask blank 12 Substrate 13 Multilayer reflective film 14 Protective film 15 Phase shift film 15a First layer 15b Second layer 16 Top layer 17 Lower layer 18 Unit thin film

Claims (16)

A reflective mask blank in which a multilayer reflective film and a phase shift film that shifts the phase of EUV light are formed in this order on a substrate.
The phase shift film has an uppermost layer and a lower layer other than the uppermost layer.
The uppermost layer is made of a material containing a silicon compound, and the lower layer is made of a material containing a tantalum compound.
The silicon compound _{contains SiO 2} and contains
n ₂ <n ₁ <1 ... (1) and λ / 4 × (2m + 1) −α ≦ n ₁・ d ₁ ≦ λ / 4 × (2m + 1) + α ・ ・ ・ (2)
A reflective mask blank characterized by satisfying the relationship of.
(However, n ₁ is the refractive index of the uppermost layer at the exposure wavelength λ = 13.5 nm.
n ₂ is the refractive index of the lower layer at the exposure wavelength λ = 13.5 nm.
d ₁ is the film thickness (nm) of the uppermost layer,
m is an integer greater than or equal to zero, and α = 1.5 nm) A reflective mask blank in which a multilayer reflective film and a phase shift film that shifts the phase of EUV light are formed in this order on a substrate.
The phase shift film has an uppermost layer and a lower layer other than the uppermost layer.
The uppermost layer is made of a material containing a silicon compound, and the lower layer is made of a material containing a tantalum compound.
The tantalum compound contains TaN and contains
n ₂ <N ₁ <1 ... (1) and
λ / 4 × (2m + 1) −α ≦ n ₁ ・ D ₁ ≦ λ / 4 × (2m + 1) + α ・ ・ ・ (2)
A reflective mask blank characterized by satisfying the relationship of.
(However, n ₁ Is the refractive index of the uppermost layer at the exposure wavelength λ = 13.5 nm.
n ₂ Is the refractive index of the lower layer at the exposure wavelength λ = 13.5 nm.
d ₁ Is the film thickness (nm) of the uppermost layer,
m is an integer greater than or equal to zero, and
α = 1.5nm) A reflective mask blank in which a multilayer reflective film and a phase shift film that shifts the phase of EUV light are formed in this order on a substrate.
The phase shift film has an uppermost layer and a lower layer other than the uppermost layer.
The uppermost layer is made of a material containing a silicon compound, and the lower layer is made of a material containing a tantalum compound.
The film thickness of the uppermost layer is 4 nm or less.
n ₂ <N ₁ <1 ... (1) and
λ / 4 × (2m + 1) −α ≦ n ₁ ・ D ₁ ≦ λ / 4 × (2m + 1) + α ・ ・ ・ (2)
A reflective mask blank characterized by satisfying the relationship of.
(However, n ₁ Is the refractive index of the uppermost layer at the exposure wavelength λ = 13.5 nm.
n ₂ Is the refractive index of the lower layer at the exposure wavelength λ = 13.5 nm.
d ₁ Is the film thickness (nm) of the uppermost layer,
m is an integer greater than or equal to zero, and
α = 1.5nm) A reflective mask blank in which a multilayer reflective film and a phase shift film that shifts the phase of EUV light are formed in this order on a substrate.
The phase shift film has an uppermost layer and a lower layer other than the uppermost layer.
The uppermost layer is made of a material containing a silicon compound, and the lower layer is made of a material containing a tantalum compound.
n ₂ <N ₁ <1 ... (1) and
λ / 4 × (2m + 1) −α ≦ n ₁ ・ D ₁ ≦ λ / 4 × (2m + 1) + α ・ ・ ・ (2)
A reflective mask blank characterized by satisfying the relationship of.
(However, n ₁ Is the refractive index of the uppermost layer at the exposure wavelength λ = 13.5 nm.
n ₂ Is the refractive index of the lower layer at the exposure wavelength λ = 13.5 nm.
d ₁ Is the film thickness (nm) of the uppermost layer,
m is an integer greater than or equal to zero and less than or equal to 2, and
α = 1.5nm) The reflective mask blank according to any one of claims 2 to 4, wherein the silicon compound contains SiO _2. The reflective mask blank according to claim 3 or 4 , wherein the tantalum compound contains TaN. The reflective mask blank according to claim 4 , wherein the film thickness of the uppermost layer is 4 nm or less. The silicon compound is SiO ₂ The reflective mask blank according to claim 6, wherein the reflective mask blank comprises. The reflective mask blank according to claim 7, wherein the tantalum compound contains TaN. The silicon compound is SiO ₂ 9. The reflective mask blank according to claim 9. A reflective mask blank in which a multilayer reflective film and a phase shift film that shifts the phase of EUV light are formed in this order on a substrate.
The phase shift film is composed of a multilayer film containing one unit thin film containing the first layer to the Nth layer (N is an integer of 2 or more) in this order, and is a unit thin film located farthest from the multilayer reflective film. The first layer is the top layer,
The first layer made of a material containing Ta, a layer other than the first layer is made of a material containing at least one metal material selected from P t, Pd, Ag and Au,
n _{i + 1} <ni _i and n ₁ <1 and

A reflective mask blank characterized by satisfying the relationship of.
(However, i is an integer from 1 to N,
n _i is the refractive index at an exposure wavelength lambda = 13.5 nm of the i layer,
d _i is the thickness of said i-layer (nm),
m is an integer greater than or equal to zero, and α = 1.5 nm) A reflective mask blank in which a multilayer reflective film and a phase shift film that shifts the phase of EUV light are formed in this order on a substrate.
The phase shift film is composed of a multilayer film containing one unit thin film containing the first layer to the Nth layer (N is an integer of 2 or more) in this order, and is a unit thin film located farthest from the multilayer reflective film. The first layer is the top layer,
The first layer is made of a material containing Cr, and the layers other than the first layer are made of a material containing at least one metal material selected from Mo, Ru, Pt, Pd, Ag and Au.
n _{i + 1} <ni _i and n ₁ <1 and

A reflective mask blank characterized by satisfying the relationship of.
(However, i is an integer from 1 to N,
n _i is the refractive index at an exposure wavelength lambda = 13.5 nm of the i layer,
d _i is the thickness of said i-layer (nm),
m is an integer greater than or equal to zero, and α = 1.5 nm) The reflective mask blank according to claim 11 or 12 , wherein N = 2. The reflective mask blank according to any one of claims 1 to 13, wherein a protective film is provided between the multilayer reflective film and the phase shift film. A reflective mask according to any one of claims 1 to 14, wherein the phase shift film in the reflective mask blank has a patterned phase shift film pattern. A method for manufacturing a semiconductor device, which comprises a pattern forming step of forming a pattern on a semiconductor substrate by using the reflective mask according to claim 15.

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