JP6947984B2 - Manufacturing method of light emitting device - Google Patents

Description

The present disclosure relates to a method for manufacturing a light emitting device.

As a method of marking a package or the like of a light emitting device, a marking method using a laser is known (for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 04-092455

There is a need for a method for easily forming highly recognizable markings.

The embodiments of the present disclosure include the following configurations.
A step of preparing an intermediate body including a light emitting element having a pair of electrodes on the same surface side and a coating member covering the light emitting element so that a part of the surface of the pair of electrodes is exposed, and a first laser beam. To form markings and debris by irradiating the first surface of the covering member with exposed electrodes, and a metal film covering the electrodes and the first surface of the covering member containing the markings and debris. Light emission comprising a step of forming and a step of irradiating the metal film on the marking and the debris with a second laser beam to remove the pre-metal film on the marking and the metal film on the debris and the debris. How to manufacture the device.

According to the present disclosure, highly recognizable markings can be easily formed.

It is a schematic bottom view of the light emitting device which concerns on embodiment. It is a schematic end view in the IB-IB line of FIG. 1A. It is a partially enlarged bottom view which enlarged the marking part of FIG. 1A. It is a schematic end view in line 1D-1D of FIG. 1C. It is a schematic plan view which shows the manufacturing method of the light emitting device which concerns on embodiment. FIG. 2 is a schematic end view taken along line IIB-IIB of FIG. 2A. It is a schematic plan view which shows the manufacturing method of the light emitting device which concerns on embodiment. FIG. 3A is a schematic end view taken along the line IIIB-IIIB of FIG. 3A. It is a schematic plan view which shows the manufacturing method of the light emitting device which concerns on embodiment. It is a schematic end view in the IVB-IVB line of FIG. 4A. It is a schematic plan view which shows the manufacturing method of the light emitting device which concerns on embodiment. It is a schematic end view in the VB-VB line of FIG. 5A. It is a schematic plan view which shows the manufacturing method of the light emitting device which concerns on embodiment. It is a partially enlarged bottom view which enlarged the marking part of FIG. 6A. It is a schematic end view of the VIC-VIC line of FIG. 6B. It is a schematic plan view which shows the manufacturing method of the light emitting device which concerns on embodiment. It is a schematic end view in the VIIB-VIIB line of FIG. 7A. It is a partially enlarged bottom view which enlarged the marking part of FIG. 7B. It is a schematic end view in the VIID-VIID line of FIG. 7C. It is a schematic plan view which shows the manufacturing method of the light emitting device which concerns on embodiment. It is a schematic end view in the line VIIIB-VIIIB of FIG. 8A. It is a schematic plan view which shows the manufacturing method of the light emitting device which concerns on embodiment. 9A is a schematic end view taken along line IXB-IX of FIG. 9A.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating a specific direction or position (for example, "top", "bottom", "right", "left", and other terms including those terms) are used as necessary. .. The use of these terms is for facilitating the understanding of the invention with reference to the drawings, and the meaning of these terms does not limit the technical scope of the invention. Further, the parts having the same reference numerals appearing in a plurality of drawings indicate the same parts or members. Further, the resin member such as the covering member will be described by using the same name regardless of before and after molding, solidification, curing, and individualization. That is, the same name applies to a member whose state changes depending on the stage of the process, such as when it is liquid before molding, becomes solid after molding, and further divides the solid after molding into a solid of small pieces whose shape has been changed. It will be explained in.

<Manufacturing method of light emitting device>
1A and 1B are schematic views of a light emitting device 100 obtained by the method for manufacturing a light emitting device according to the present embodiment. The light emitting device 100 includes a light emitting element 10 and a coating member 20 that covers the light emitting element 10. The light emitting element 10 includes a semiconductor laminate including the semiconductor layer 11 and the element substrate 12, and a pair of electrodes 13 provided on the same surface side (semiconductor layer 11 side) of the semiconductor laminate. The lower surface of each of the pair of electrodes 13 exposed from the covering member 20 is covered with the metal film 50. Further, the covering member 20 is provided with a marking 20M on the surface (first surface 21) on the side where the electrode 13 is exposed. Here, eight numbers of "123456878" are shown as an example of the marking 20M.

Such a light emitting device 100 can be obtained by the following manufacturing method.
(1) An intermediate body 100A including a light emitting element 10 having a pair of electrodes 13 on the same surface side and a covering member 20 covering the light emitting element 10 so that a part of the surface of the pair of electrodes 13 is exposed. Preparation step (2) A step of irradiating the first surface 21 of the covering member 20 with the electrode 13 exposed with the first laser beam to form the marking 20M and the debris 20D (3) The electrode 13 and the marking 20M. And the step of forming the metal film 50 covering the first surface 21 of the covering member 20 including the debris 20D (4) The metal film 50 on the marking 20M and the debris 20D is irradiated with the second laser beam to mark. Step of removing the metal film 50 on the 20M and the metal film 50 on the debris 20D and the debris 20D.

Here, "debris" is a substance in which a part of the irradiated portion is scattered around the marking when the light emitting device 100 is irradiated with a laser beam in order to form a marking such as a lot number on the light emitting device. Point to. When such debris adheres to the periphery of the marking, the outer edge of the marking may become unclear and difficult to recognize. Therefore, as a method of removing debris, it is known to directly irradiate the debris with a laser beam to remove the debris. However, at that time, new debris may be formed.

In the method according to the present embodiment, a metal film is formed on the debris, and the metal film is irradiated with laser light to remove the debris and the metal film by laser ablation. Laser ablation is a phenomenon in which the surface of a solid is removed when the irradiation intensity of the laser light applied to the surface of the solid exceeds a certain magnitude (threshold value). In order for laser ablation to occur, the surface of the solid and its vicinity must be above a certain temperature. The debris adhering to the covering member is a member in which a part of the covering member is scattered by laser light irradiation, so that the debris adhering to the unaltered covering member is not large. Therefore, by irradiating the metal film on the debris with a laser beam, both the debris and the metal film on the debris can be removed from the covering member by laser ablation.

In the method according to the present embodiment, the marking is formed on the covering member forming a part of the outer surface of the light emitting device. The covering member is mainly composed of a resin material. By irradiating the metal film, which can absorb energy more efficiently than the resin, with the laser beam instead of directly irradiating the debris with the laser beam, it is possible to suppress the formation of new debris. Therefore, it is possible to form markings having a clear outer edge and excellent recognition.

Further, in the method according to the present embodiment, the metal film as described above may be formed not only on the debris but also on both the debris and the electrodes. For example, when the electrode of the light emitting element is a material that easily oxidizes or has a low bondability to the solder, the electrode may be coated with a metal film that does not easily oxidize or a metal film that has a high bondability to the solder. preferable. Therefore, by simultaneously forming the metal film for protecting the electrode and the metal film for removing debris, the metal film can be efficiently formed without increasing the number of new steps.

Further, in the laser ablation by irradiating the laser beam, not only the debris and the metal film on the debris can be removed, but also the metal film other than the debris can be removed. For example, after forming a metal film that continuously covers a pair of positive and negative electrodes and a coating member between the electrodes, the metal film can be removed by irradiating the coating member between the electrodes with laser light.

For example, when forming a metal film separated from each other on each of the pair of electrodes, there is a method of covering the electrodes with a mask or the like, forming the metal film, and then removing the mask. On the other hand, when laser ablation is used, a metal film that continuously covers a pair of electrodes is formed, and then the metal film on the coating member between the electrodes is irradiated with laser light to separate the metals. A film can be formed. That is, by using laser ablation, it is possible to form metal films that are separated from each other without using a mask.

Hereinafter, a method for manufacturing the light emitting device 100 according to the present embodiment will be described with reference to the drawings. In this manufacturing method, a plurality of light emitting devices 100 can be manufactured at the same time.

(1) Step of preparing intermediate First, intermediate 100A as shown in FIGS. 5A and 5B is prepared. Here, as the intermediate 100A, an intermediate 100A including a light emitting element 10, a covering member 20, a light guide member 30, and a translucent member 40 is prepared. Here, the intermediates of the plurality of light emitting devices 100 are prepared in a state before being fragmented. It should be noted that an intermediate capable of obtaining one light emitting device may be prepared. Further, the light guide member 30 can be omitted. Further, the translucent member 40 can also be omitted.

Such intermediate 100A may be prepared by purchase or the like. Further, it may be prepared by going through a part or all of the manufacturing steps of the intermediate 100A including, for example, the following steps. 2A to 5B show an example of a manufacturing process of the intermediate 100A.

First, a sheet-shaped translucent member 40 is prepared. Here, as the translucent member 40, a translucent member 40 including a translucent resin material and a phosphor as a wavelength conversion substance is prepared. The translucent member 40 is a member that constitutes a light extraction surface of the light emitting device 100.

Next, as shown in FIGS. 2A and 2B, a plurality of light guide members 30 are arranged on the translucent member 40. The light guide member 30 functions as a member for adhering the translucent member 40 and the light emitting element 10. Therefore, in the subsequent steps, the light guide member 30 is in a deformable state, for example, in a liquid state (paste form).

For the plurality of light guide members 30, for example, a plurality of liquid resin materials are arranged in a separated state. Examples of the method of arranging the light guide member 30 include methods such as printing, potting, transfer, and spraying. When the translucent member 40 is prepared as a piece that has been individually separated (small pieces of a size arranged in one light emitting device 100), each of the translucent members 40 of each small piece may be used. The light guide member 30 is formed.

The light guide member 30 can be, for example, circular, elliptical, square, rectangular, or the like in a plan view. In the example shown in FIG. 2A, the light guide member 30 has a circular shape in a plan view. The size of the light guide member in a plan view is preferably equal to or larger than that of the light emitting element 10, for example. The distance between the adjacent light guide members 30 can be appropriately set according to the size of the light emitting device 100 and the like.

Next, as shown in FIGS. 3A and 3B, the light emitting element 10 is placed on each of the plurality of light guide members 30. The light emitting element 10 includes a semiconductor layer 11 and an element substrate 12, and is placed with the semiconductor layer 11 side facing up, that is, the pair of electrodes 13 provided on the semiconductor layer 11 facing up. At this time, the liquid light guide member 30 crawls up to the side surface of the light emitting element 10. In other words, the light guide member 30 is formed so as to cover at least a part of the side surface of the light emitting element 10. The outer surface of the light guide member 30 that crawls up becomes an inclined surface that is inclined upward in a cross-sectional view. After the light emitting element 10 is placed on the light guide member 30, the light emitting element 10 may be pressed from above, if necessary. After the light emitting element 10 is placed on the light guide member 30, the light guide member 30 can be cured by undergoing a process such as heating.

In the example shown in FIG. 3B, the light guide member 30 is arranged between the light emitting element 10 and the translucent member 40. Further, by further pressing the light emitting element 10 from above, the light guide member 30 does not have to be arranged between the light emitting element 10 and the translucent member 40. That is, the light emitting element 10 and the translucent member 40 may be in contact with each other. In addition, in FIG. 4B and later, the state in which the light emitting element 10 and the translucent member 40 are in contact with each other is illustrated.

Next, as shown in FIGS. 4A and 4B, the covering member 20 is formed on the upper surface of the translucent member 40. At this time, the covering member 20 is formed by embedding the light emitting element 10 and the light guide member 30. Here, the covering member 20 is formed at a height such that the upper surface of the electrode 13 of the light emitting element 10 is also embedded. However, the covering member 20 may be formed at a height such that the upper surface of the electrode 13 is exposed.

After the covering member 20 is cured, a part of the covering member 20 is removed by a known processing method such as grinding with a grindstone so that the electrode 13 of the light emitting element 10 is exposed as shown in FIGS. 5A and 5B. To reduce the thickness. As a result, the first surface 21 of the covering member 20 that becomes a part of the lower surface of the light emitting device 100 is formed. During this processing, processing marks, stains, etc. may adhere to the first surface 21 of the covering member 20. Such processing marks, stains, and the like can also be removed in the metal film 50 removing step described later. Further, when the covering member 20 is formed so that the electrode 13 is not embedded as described above, this step can be omitted.

As described above, Intermediate 100A can be obtained. The intermediate is not limited to such a shape, and intermediates having various shapes can be used.

Next, the first laser beam is irradiated on the first surface 21 of the covering member 20 to form the marking 20M as shown in FIGS. 6A and 6B. Each marking 20M is a recess from which a part of the covering member 20 has been removed, and has an opening on the first surface 21 of the covering member 20 as shown in FIG. 6C.

Debris 20D is formed when the marking 20M is formed. As shown in FIGS. 6B and 6C, the debris 20D adheres to the inside of the marking 20M (inside the recess) and further on the first surface 21 of the covering member 20 around the debris 20D. The debris 20D is a part of the covering member 20 heated by irradiating with the first laser beam or a modified substance thereof. For example, when the covering member 20 uses silicone as a base material and the base material _{contains TiO 2} as a reflective substance, the debris 20D also contains silicone, TiO ₂ and their modified substances as main components. Further, the size and number of the debris 20D, the formation region, and the like are not constant depending on the intensity of the first laser beam, the composition and properties of the covering member 20, and the like. Due to the adhesion of the debris 20D, the outline of the marking 20M is blurred and the recognition property is lowered.

The position where the marking 20M is formed may be an area that serves as one light emitting device. Further, it can be arbitrarily selected as long as it is on the first surface 21 of the covering member 20, that is, on the surface on which the electrode 13 is exposed. For example, as shown in FIG. 6A, a series of markings 20M can be formed on the outside of a pair of electrodes 13 included in one light emitting element. Alternatively, the marking 20M may be formed between the pair of electrodes 13 included in one light emitting element. Further, as shown in FIG. 6A, in addition to a series of markings 20M collected in one place, markings 20M may be formed in several places. Further, the marking 20M may have a coded shape such as a letter, a number, a symbol, a bar code, or a QR code (registered trademark).

The first laser beam is irradiated under conditions under which a part of the covering member 20 is removed and a recognizable marking 20M can be formed. For example, the marking 20M can be formed by appropriately setting the main wavelength of the first laser beam, the output (intensity), the diameter of the irradiation spot, the moving speed of the irradiation spot, and the like.

For example, a case where the covering member 20 is _{a resin material containing silicone as a base material and containing TiO 2} will be given as an example. In this case, green laser light having a main wavelength of 532 nm can be used as the first laser light. The output of the first laser beam is preferably 1 W to 4 W, and preferably irradiates a laser beam having an output of about 2 W. The first laser beam may be continuous oscillation or pulse oscillation. The irradiation spot diameter of the first laser beam can be, for example, 15 μm to 30 μm. The moving speed of the irradiation spot can be, for example, 100 mm / s to 1000 mm / s. Examples of the laser light source capable of emitting such a first laser beam include a second harmonic such _{as a YAG laser and a YVO 4 laser.}

Next, as shown in FIGS. 7A to 7D, the metal film 50 is formed on the debris 20D. At this time, it is preferable to form the metal film 50 also on the debris 20D inside the recess of the marking 20M. Further, it is preferable to form the metal film 50 on substantially the entire first surface 21 of the covering member 20 to which the electrode 13 and the debris 20D are not attached. Examples of the method for forming the metal film 50 include a sputtering method, a plating method, and a CVD method. Preferably, a sputtering method is used.

Next, the metal film 50 on the marking 20M and the debris 20D formed on the covering member 20 is irradiated with the second laser beam. By irradiating with the second laser beam, the debris 20D and the metal film 50 on the debris 20D are removed by laser ablation.

The first laser beam removes a part of the covering member 20 to form a recess to form the marking 20M, whereas the second laser beam removes the debris 20D. Therefore, the main wavelength of the second laser beam, the output (intensity), the diameter of the irradiation spot, the moving speed of the irradiation spot, and the like are set appropriately according to this purpose, so that the debris 20D and the metal film 50 on it are set appropriately. Can be removed. For example, the laser energy per unit volume of the second laser beam is preferably smaller than the laser energy per unit volume of the first laser beam. Further, it is preferable to select a wavelength in which the reflectance of the metal film 50 is low, for example, 90% or less, for the second laser beam.

When the metal film 50 is also formed on the covering member 20 between the pair of electrodes 13, the second laser beam also irradiates the covering member 20 between the pair of electrodes 13. Specifically, the metal film 50 that covers each of the pair of electrodes 13 is irradiated with a second laser beam so as to be electrically separated from each other, and the metal film 50 is removed by laser ablation. As a result, each of the pair of electrodes 13 can be covered to form an electrically separated metal film 50.

Further, the second laser beam may also irradiate the metal film 50 on the electrode 13. At this time, it is preferable to irradiate the second laser beam under the condition that the metal film 50 on the electrode 13 cannot be removed by laser ablation.

Further, when the metal film 50 that continuously covers the electrode 13 and the covering member 20 (on the first surface) is formed, the entire surface of the metal film 50 may be irradiated with the second laser beam. In that case, the second laser beam is irradiated under the condition that laser ablation occurs on the metal film 50 on the covering member 20 and laser ablation does not occur on the metal film 50 on the electrode 13.

The threshold value of the irradiation intensity of the laser beam at which laser ablation occurs differs depending on the heat dissipation characteristics of the surface, the heat conduction characteristics of the solid, and the like. That is, even when the laser beam is irradiated under the same intensity and conditions, laser ablation can be prevented from occurring on the surface of a certain solid, and laser ablation can be prevented from occurring on the surface of another solid. By utilizing such a phenomenon, even if the entire surface of the metal film 50 is irradiated with the second laser beam, laser ablation occurs in the metal film 50 on the covering member 20, and the laser is generated on the metal film 50 on the electrode 13. Ablation can be prevented.

For example, when the coating member 20 is a _{resin material containing silicone as a base material and contains TiO 2} , the electrode 13 is Cu, and the outermost surface of the metal film 50 is Au, the main wavelength of the second laser beam is It is preferable to use a laser beam having a shorter main wavelength than a laser beam having a wavelength of 1064 nm. As a result, ablation on the covering member 20 can be efficiently generated, and mass productivity can be improved.

The second laser beam may be continuous oscillation or pulse oscillation. The output of the second laser beam is preferably 1 W to 4 W, and more preferably about 2 W. The irradiation spot diameter of the second laser beam can be, for example, 20 μm to 100 μm. The moving speed of the irradiation spot can be, for example, 500 mm / s to 3000 mm / s. Examples of the laser light source capable of emitting such a second laser beam include second harmonics such _{as a YAG laser and a YVO 4 laser.}

Next, as shown in FIGS. 9A and 9B, the covering member 20 and the translucent member 40 are formed along the _{broken line X 1} , the broken line X ₂ , the broken line X ₃ and the broken line X ₄ passing through the middle of the adjacent light emitting elements 10. Cut with a cutting blade such as a dicing saw. As a result, it is possible to obtain a plurality of individualized light emitting devices 100.

Hereinafter, each component of the light emitting device 100 will be described.
(Light emitting element)
As the light emitting element, for example, a semiconductor light emitting element such as a light emitting diode can be used. The semiconductor light emitting device can be, for example, a semiconductor laminate including an element substrate and a semiconductor layer formed on the device substrate. The light emitting element can be a polygon such as a triangle, a quadrangle, or a hexagon in a plan view. The size can be, for example, about 100 μm to 3000 μm on one side in a plan view. Specifically, it can be a square having a side of about 600 μm, about 1400 μm, and about 1700 μm. Further, the light emitting element 10 may be a rectangle having a long side and a short side in a plan view. For example, the size can be 1100 μm × 200 μm.

As the element substrate of the semiconductor laminate, for example, _{an insulating material such as sapphire (Al 2} O ₃ ) having translucency or a semiconductor material such as a nitride semiconductor can be used.

The semiconductor laminate includes a plurality of semiconductor layers. The semiconductor layer can include three semiconductor layers: a first conductive type semiconductor layer (for example, an n-type semiconductor layer), a light emitting layer (active layer), and a second conductive type semiconductor layer (for example, a p-type semiconductor layer). The semiconductor layer can be formed from a semiconductor material such as a group III-V compound semiconductor or a group II-VI compound semiconductor. Specifically, _{nitride-based semiconductor materials such as In X} Al _Y Ga _1-XY N (0 ≦ X, 0 ≦ Y, X + Y ≦ 1) (for example, InN, AlN, GaN, InGaN, AlGaN, InGaAlN). Etc.) can be used.

As the electrode of the light emitting element, a good electric conductor can be used, and for example, metals such as Cu, Ag, and Ni are suitable.

(Metal film)
The metal film is a member used for removing debris, and is a film capable of preventing corrosion and oxidation of the surface of the electrode. As the material of the metal film, a material having better corrosion resistance and oxidation resistance than the electrode is selected. For example, the outermost layer of the metal film is preferably a noble metal such as Au or Pt. Further, when the metal film covers the surface to be soldered of the light emitting device, it is preferable to use Au having good solderability on the outermost surface.

The metal film may be composed of only one layer of a single material, or may be composed of layers of different materials laminated. Examples of the laminated structure include Ni / Au, Ti / Au, Ni / Pt / Au and the like. By providing a layer such as Ni or Ti between the electrode and the outermost layer, the adhesion of the outermost layer can be improved. Further, by providing a diffusion prevention layer such as Pt between the electrode and the outermost layer, it is possible to reduce the diffusion of Sn contained in the solder used for soldering to the electrode and the layer close to the electrode.

If the electrode protrudes from the covering member, the metal film also covers the side surface of the protruding electrode. Thereby, deterioration on the side surface of the electrode can be reduced.

The thickness of the metal film can be variously selected. For example, in order to perform selective laser ablation such that the metal film on the covering member undergoes laser ablation and the metal film on the electrode does not undergo laser ablation, the thickness of the metal film must be, for example, 1 μm or less. Is preferable, and 1000 Å or less is more preferable. The thickness of the metal film refers to the total thickness of the plurality of layers when the metal film is formed by laminating a plurality of layers.

(Coating member)
The covering member is a member that covers the side surface of the light emitting element and the electrode forming surface. A resin material is preferable as the covering member.

The covering member is preferably a member that blocks light from the light emitting element, and more preferably a member that reflects light from the light emitting element. Examples of the light-reflecting substance include TiO ₂ , SiO ₂ , Al ₂ O _{3, and the} like.

As the resin material that can be used for the coating member, a thermosetting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, or a phenol resin is particularly preferable. The thermal conductivity of the covering member is preferably 1/500 or less of the thermal conductivity of the electrode. As a result, debris can be removed efficiently.

The covering member can be light reflective. The light-reflecting coating member has a high reflectance to light from a light emitting element, and is preferably one having a reflectance of 70% or more, for example.

As the light-reflecting coating member, for example, a light-transmitting resin in which a light-reflecting substance is dispersed can be used. As the light-reflecting substance, for example, zinc oxide, silicon oxide, titanium oxide, zirconium oxide, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, mullite and the like are suitable. The light-reflecting substance can be contained, for example, 30 wt% to 70 wt%. As the light-reflecting substance, granular, fibrous, thin plate pieces and the like can be used. In particular, the fibrous light-reflecting substance can reduce the coefficient of thermal expansion of the coating member.

For example, in the case of a coating member using a silicone resin as a base material and containing 60 wt% of titanium oxide as a light-reflecting substance, the thermal conductivity is about 0.3 W / (m · K).

(Translucent member)
The translucent member is a translucent member arranged on the light emitting surface side of the light emitting element, and serves as a light emitting surface of the light emitting device 100. The translucent member may contain a phosphor that is excited by light from a light emitting element to convert it into light having a different wavelength, various fillers, and the like. As the translucent member, a translucent resin, glass, or the like can be used. In particular, a translucent resin is preferable, and a thermocurable resin such as a silicone resin, a silicone-modified resin, an epoxy resin, and a phenol resin, and a thermoplastic resin such as a polycarbonate resin, an acrylic resin, a methylpentene resin, and a polynorbornene resin can be used. can. In particular, a silicone resin having excellent light resistance and heat resistance is preferable.

Examples of the fluorescent substance include yttrium aluminum garnet-based phosphor (Ce: YAG) activated with cerium; and lutetium aluminum activated with cerium as a fluorescent substance that can be excited by a blue light emitting element or an ultraviolet light emitting element. -Garnet-based phosphor (Ce: LAG); nitrogen-containing calcium aluminosilicate-based phosphor (CaO-Al ₂ O _3- SiO ₂ ) activated with europium and / or chromium; silicate-based fluorescent material activated with europium (CaO-Al 2 O 3-SiO 2). _{(Sr, Ba) 2 SiO 4} ); β -sialon phosphor, CASN phosphor, nitride-based phosphor such as SCASN phosphor; KSF phosphor _{(K 2 SiF 6: Mn)} ; sulphide phosphor , Quantum dot phosphor and the like. By combining these phosphors with a blue light emitting element or an ultraviolet light emitting element, a light emitting device 100 of various colors (for example, a white light emitting device 100) can be obtained.

100 ... Light emitting device 100A ... Intermediate body of light emitting device 10 ... Light emitting element 11 ... Semiconductor layer 12 ... Element substrate 13 ... Electrode 20 ... Covering member 21 ... First surface of covering member 20M ... Marking 20D ... Debris 30 ... Light guide member 40 ... Translucent member 50 ... Metal film

Claims (5)

A step of preparing an intermediate including a light emitting element having a pair of electrodes on the same surface side and a light-reflecting coating member covering the light emitting element so that a part of the lower surface of the pair of electrodes is exposed. When,
A step of irradiating the first surface of the covering member with the lower surface of the electrode exposed with the first laser beam to form marking and debris.
A step of forming a metal film that covers the electrode and the first surface of the covering member including the marking and the debris.
A step of irradiating the metal film on the marking and the debris with a second laser beam to remove the metal film on the marking and the debris and the metal film on the debris.
A method for manufacturing a light emitting device. The light emission according to claim 1, wherein the metal film is formed on substantially the entire coating member including the electrode, the marking, and the debris, and the second laser beam is irradiated to substantially the entire metal film. Manufacturing method of the device. The method for manufacturing a light emitting device according to claim 1 or 2, wherein the electrode contains Cu and the metal film contains Ni and Au. The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein the thermal conductivity of the covering member is 1/500 or less of the thermal conductivity of the electrode. The method for manufacturing a light emitting device according to any one of claims 1 to 4, wherein the laser energy per unit volume of the second laser beam is smaller than the laser energy per unit volume of the first laser beam.

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