JP6922179B2 - A method for manufacturing a vapor deposition mask, an organic semiconductor element, and a method for manufacturing an organic EL display. - Google Patents

Description

The embodiments of the present disclosure relate to a vapor deposition mask, a method for manufacturing an organic semiconductor device, and a method for manufacturing an organic EL display.

In the formation of a thin-film deposition pattern using a thin-film deposition mask, a thin-film deposition mask provided with an opening corresponding to the pattern to be deposited is usually brought into close contact with an object to be vapor-deposited, and a thin-film deposition material discharged from the thin-film deposition source is passed through the opening. , It is performed by adhering to the object to be vapor-deposited.

Examples of the vapor deposition mask used for forming the vapor deposition pattern include a resin mask having a resin mask opening corresponding to the pattern to be deposited and a metal mask having a metal mask opening (sometimes referred to as a slit). A vapor deposition mask (for example, Patent Document 1) formed by laminating and the like is known.

Japanese Patent No. 5288072

The main object of the embodiments of the present disclosure is to provide a vapor deposition mask capable of forming a high-definition vapor deposition pattern, a method for manufacturing an organic semiconductor device, and a method for manufacturing an organic EL display.

The vapor deposition mask according to the embodiment of the present disclosure has a groove portion provided on the front surface and a resin mask opening that reaches the back surface from the bottom surface of the groove portion and corresponds to a pattern to be produced by vapor deposition. Includes a resin mask that overlaps the two or more openings in the thickness direction.

In the vapor deposition mask, a metal mask having a metal mask opening is laminated on the surface side of the resin mask, and the metal mask opening overlaps with a groove portion of the resin mask in the thickness direction. You may.

According to the vapor deposition mask of the present disclosure, a high-definition vapor deposition pattern can be formed.

(A) is a schematic cross-sectional view showing an example of the vapor deposition mask according to the embodiment of the present disclosure, and (b) is an example when the vapor deposition mask according to the embodiment of the present disclosure is viewed in a plan view from the surface side of the resin mask. It is a front view which shows. It is schematic cross-sectional view which shows an example of the vapor deposition mask which concerns on another embodiment of this disclosure. (A) is a schematic cross-sectional view showing an example of a vapor deposition mask according to another embodiment of the present disclosure, and (b) is a plan view of the vapor deposition mask according to another embodiment of the present disclosure from the surface side of the resin mask. It is a front view which shows an example at the time of this. It is a figure which shows an example of the device which has an organic EL display.

Hereinafter, embodiments of the present invention will be described with reference to drawings and the like. It should be noted that the present invention can be implemented in many different modes and is not construed as being limited to the description of the embodiments illustrated below. Further, in order to clarify the explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but this is just an example, and the interpretation of the present invention is used. It is not limited. Further, in the specification of the present application and each of the drawings, the same elements as those described above with respect to the above-described drawings may be designated by the same reference numerals, and detailed description thereof may be omitted as appropriate. Further, for convenience of explanation, the explanation will be made using terms such as upper or lower, but the vertical direction may be reversed. The same applies to the left-right direction.

<Evaporation mask according to the first embodiment>
FIG. 1A is a schematic cross-sectional view showing an example of the vapor deposition mask according to the embodiment of the present disclosure, and FIG. 1B is a plan view of the vapor deposition mask according to the embodiment of the present disclosure from the surface side of the resin mask. It is a front view which shows an example at the time of this. In FIG. 1B, the groove formed in the resin mask is omitted.

As shown in FIGS. 1A and 1B, the vapor deposition mask 100 according to the first embodiment of the present disclosure is composed of only the resin mask 20. The resin mask 20 constituting the vapor deposition mask 100 according to the first embodiment of the present disclosure will be described below.

(Resin mask)
The resin mask 20 has a groove portion 21 provided on the front surface 20a and a resin mask opening 25 that reaches the back surface 20b from the bottom surface 21a of the groove portion 21 and corresponds to a pattern to be produced by vapor deposition, and is one of the groove portions 21. Overlaps the two or more resin mask openings 25 in the thickness direction. In FIG. 1A, one groove 21 overlaps with three resin mask openings 25 in the thickness direction.

According to the vapor deposition mask 100 according to the first embodiment of the present disclosure, the thickness of the portion where the resin mask opening 25 corresponding to the pattern to be vapor-deposited is formed (reference numeral in FIG. 1A). Since x) can be made thinner than the thickness of the entire resin mask 20 (reference numeral y in FIG. 1A), the generation of so-called shadows can be effectively suppressed. On the other hand, according to the vapor deposition mask 100 (resin mask 20) according to the first embodiment of the present disclosure, the thickness (y) of the portion where the resin mask opening 25 corresponding to the pattern produced by vapor deposition is not formed. Can be sufficiently secured without considering shadows, so that the rigidity of the entire vapor deposition mask 100 (resin mask 20) can be ensured. Further, according to the vapor deposition mask 100 (resin mask 20) according to the first embodiment of the present disclosure, since it is composed of a single material, the material is compared with the vapor deposition mask formed by laminating different materials. There is little risk of wrinkles or deviations due to stress differences. The shadow means that a part of the vapor deposition material discharged from the vapor deposition source collides with the inner wall surface of the resin mask opening 25 of the resin mask 20 or the inner wall surface of the metal mask opening of the metal mask described later to be vapor-deposited. It refers to a phenomenon in which an undeposited portion having a film thickness thinner than the target vapor deposition film thickness is generated by not reaching the object.

The material of the resin mask 20 constituting the vapor deposition mask 100 according to the first embodiment of the present disclosure is not limited, and for example, a high-definition groove portion 21 and a resin mask opening 25 can be formed by laser processing or the like. It is preferable to use a lightweight material having a small dimensional change rate and moisture absorption rate with heat and aging. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, and ethylene-. Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylate copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, ionomer resin and the like. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a hygroscopicity of 1.0% or less is preferable, and a resin material having both of these conditions is particularly preferable. .. By using the resin mask using this resin material, the dimensional accuracy of the groove 21 and the resin mask opening 25 can be improved, and the dimensional change rate and the moisture absorption rate with heat and aging can be reduced.

The thickness of the resin mask 20 is also not particularly limited, but when the effect of suppressing the generation of shadows is further improved, the thickness of the entire resin mask 20 (reference numeral y in FIG. 1A) is 65 μm or less. It is preferably present, and more preferably less than 10 μm. The preferable range of the lower limit value is not particularly limited, but when the thickness of the entire resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and when the groove 21 is formed, the risk of deformation and the like increases. .. In particular, by setting the thickness of the entire resin mask 20 to 3 μm or more and less than 50 μm, preferably 3 μm or more and less than 10 μm, more preferably 3 μm or more and 8 μm or less, the influence of shadows when forming a high-definition pattern exceeding 400 ppi is further increased. It can be effectively prevented.

Further, the cross-sectional shape of the resin mask opening 25 is not particularly limited, and the end faces of the resin masks forming the resin mask opening 25 may be substantially parallel to each other, but as shown in FIG. 1A. It is preferable that the cross-sectional shape of the resin mask opening 25 has a shape that spreads toward the vapor deposition source, in other words, a shape that has a gradient. This gradient can be appropriately set in consideration of the thickness of the resin mask 20 and the like, but the tip on the back surface side of the resin mask opening 25 of the resin mask and the bottom surface side of the groove in the resin mask opening of the resin mask. The angle formed by the straight line connecting the two and the back surface of the resin mask is preferably in the range of 5 ° to 85 °, more preferably in the range of 15 ° to 75 °, and 25 ° to 65 °. It is more preferable that it is within the range of. In particular, even within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used. Further, in the illustrated form, the end face forming the resin mask opening 25 has a linear shape, but is not limited to this, and has an outwardly convex curved shape, that is, the resin mask opening. The overall shape of 25 may be a bowl shape. Further, the opposite, that is, an inwardly convex curved shape may be obtained.

Further, the planar shape of the resin mask opening 25, in other words, the opening shape is not particularly limited, and may be rectangular as shown in FIG. 1, and although not shown, for example, a rhombus or a polygonal shape. It may be a shape having a curvature such as a circle or an ellipse. It can be said that the rectangular or polygonal opening shape is a preferable opening shape of the resin mask opening 25 in that the light emitting area can be increased as compared with the opening shape having a curvature such as a circle or an ellipse.

Further, the cross-sectional shape of the groove portion 21 is not particularly limited, and the facing end faces of the resin masks forming the groove portion 21 may be substantially parallel to each other, while the resin mask opening 25 described above may be used. Similarly, as shown in FIG. 1, the shape may be such that it spreads toward the vapor deposition source. By forming the shape having such a gradient, the generation of shadows can be effectively suppressed. The angle of the gradient in this case is not particularly limited, and may be, for example, about the same as the resin mask opening 25.

The depth of the groove 21 (yx in FIG. 1A) is not particularly limited, and can be appropriately designed in consideration of the thickness y of the resin mask 20. For example, the depth (y-x) of the groove portion 21 may be designed so that the thickness x of the portion where the resin mask opening 25 is formed is about 3 μm or more and 25 μm or less.

The planar shape of the groove 21 is also not particularly limited, and can be appropriately selected from a rectangular shape, a rhombus, a polygonal shape, a shape having a curvature such as a circle or an ellipse, and the like, similarly to the planar shape of the resin mask opening 25 described above. can.

The method for producing such a resin mask 20 is not particularly limited, and any method can be adopted as long as the resin mask 20 having an intended shape can be produced. For example, the groove portion 21 and the resin mask opening 25 may be formed on the resin plate by a laser processing method, or the groove portion 21 and the resin mask opening 25 may be formed by an etching method. On the other hand, the resin mask 20 may be formed using a 3D printer. Further, a laser processing method, an etching method, and a 3D printer may be used in combination.

<Evaporation mask according to the second embodiment>
FIG. 2 is a schematic cross-sectional view showing an example of a vapor deposition mask according to another embodiment of the present disclosure.

As shown in FIG. 2, the vapor deposition mask 100 according to the second embodiment of the present disclosure is different from the vapor deposition mask 100 according to the first embodiment in that the inner wall surface of the groove 21 is stepped. And all other configurations are the same.

In the vapor deposition mask 100 according to the embodiment of the present disclosure, as shown in FIG. 2, the inner wall surface 21b of the groove portion may have a stepped shape. In this case, the number of stages is not particularly limited, and as shown in FIG. 2, the number of stages may be one, or more stages may be provided. In this way, by making the inner wall surface 21b of the groove portion stepped, the thickness of the entire resin mask 20 is increased to ensure the strength, while the thickness of the portion where the resin mask opening 25 is formed is thin. Therefore, the processing time of the resin mask opening 25 can be shortened, and the demand for higher definition can be met. Furthermore, it is possible to suppress the generation of shadows.

<Evaporation mask according to the third embodiment>
FIG. 3A is a schematic cross-sectional view showing an example of a vapor deposition mask according to another embodiment of the present disclosure, and FIG. 3B is a surface of a resin mask showing the vapor deposition mask according to another embodiment of the present disclosure. It is a front view which shows an example when viewed in a plan view from the side. In FIG. 3B, the groove formed in the resin mask is omitted.

As shown in FIGS. 3A and 3B, the vapor deposition mask 100 according to the third embodiment is a metal having a metal mask opening 15 on the surface side of the resin mask 20 described in the first embodiment. The mask 10 is laminated, and the metal mask opening 15 is characterized in that it overlaps with the groove 21 of the resin mask 20 in the thickness direction. As described above, the thin-film mask 100 according to the embodiment of the present disclosure may exhibit a laminated structure of the metal mask 10 and the resin mask 20.

Here, the resin mask 20 in the vapor deposition mask 100 according to the third embodiment is the same as the resin mask 20 in the vapor deposition mask 100 according to the first embodiment and the second embodiment, and will be described here. Is omitted.

(Metal mask)
As shown in FIG. 3A, the metal mask 10 is laminated on the surface side of the resin mask 20. The metal mask 10 is made of metal, and as shown in FIG. 1B, a metal mask opening 15 extending in the vertical direction or the horizontal direction is arranged. The arrangement example of the metal mask openings 15 is not particularly limited, and the metal mask openings 15 extending in the vertical direction and the horizontal direction may be arranged in a plurality of rows in the vertical direction and the horizontal direction, and the metal extending in the vertical direction may be arranged. The mask openings 15 may be arranged in a plurality of rows in the horizontal direction, or the metal mask openings extending in the lateral direction may be arranged in a plurality of rows in the vertical direction. Further, only one row may be arranged in the vertical direction or the horizontal direction. Further, the plurality of metal mask openings 15 may be randomly arranged. Further, the number of metal mask openings 15 may be one. The "vertical direction" and "horizontal direction" referred to in the present specification mean the vertical direction and the horizontal direction of the drawing, and are any of the longitudinal direction and the width direction of the vapor deposition mask, the resin mask, and the metal mask. You may. For example, the longitudinal direction of the vapor deposition mask, the resin mask, and the metal mask may be the “vertical direction”, and the width direction may be the “vertical direction”.

The material of the metal mask 10 is not particularly limited, and conventionally known materials in the field of vapor deposition masks can be appropriately selected and used. Examples thereof include metal materials such as stainless steel, iron-nickel alloys, and aluminum alloys. .. Among them, the Invar material, which is an iron-nickel alloy, can be preferably used because it is less deformed by heat.

The thickness of the metal mask 10 is also not particularly limited, but in order to prevent the generation of shadows more effectively, it is preferably 100 μm or less, more preferably 50 μm or less, and more preferably 35 μm or less. Especially preferable. If it is thinner than 5 μm, the risk of breakage and deformation increases and handling tends to be difficult.

The cross-sectional shape of the metal mask opening 15 formed in the metal mask 10 is also not particularly limited, but as shown in FIG. 3A, it may have a shape that spreads toward the vapor deposition source. preferable. More specifically, the angle formed by the straight line connecting the lower bottom tip of the metal mask opening and the upper bottom tip of the metal mask opening 15 and the bottom surface of the metal mask 10, in other words, the metal mask opening. In the thickness direction cross section of the inner wall surface constituting the portion 15, the angle formed by the inner wall surface of the metal mask opening 15 and the surface of the metal mask 10 in contact with the resin mask 20 (in the illustrated embodiment, the lower surface of the metal mask) is It is preferably in the range of 5 ° or more and 85 ° or less, more preferably in the range of 15 ° to 80 °, and further preferably in the range of 25 ° or more and 65 ° or less. In particular, even within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used.

Further, in the form shown in FIG. 3B, the opening shape when the metal mask opening 15 is viewed in a plan view is rectangular, but the opening shape is not particularly limited, and the opening of the metal mask opening 15 is limited. The shape may be any shape such as a trapezoidal shape and a circular shape.

The method for producing such a metal mask 10 is not particularly limited, and any method may be used as long as it can produce the metal mask 10 having an intended shape. For example, various etching methods may be used to form the metal mask opening 15 on the metal plate by etching, while various plating methods may be used to form the metal mask opening 15 by plating and growing a portion other than the metal mask opening 15. Further, a metal mask opening may be formed by various metal processing methods.

The method of laminating the metal mask 10 on the surface side of the resin mask 20 is not particularly limited, and the resin mask 20 and the metal mask 10 may be bonded to each other using various adhesives and have self-adhesiveness. A resin mask may be used. The sizes of the resin mask 20 and the metal mask 10 may be the same or different. In consideration of the optional fixing to the frame after this, if the size of the resin mask 20 is made smaller than that of the metal mask 10 and the outer peripheral portion of the metal mask 10 is exposed, the metal mask 10 is used. It is preferable because it is easy to fix the metal to the frame.

<Evaporation method using a vapor deposition mask>
The vapor deposition method used for forming the vapor deposition pattern using the vapor deposition mask of the present disclosure described above is not particularly limited, and examples thereof include a reactive sputtering method, a vacuum vapor deposition method, an ion plating method, and an electron beam vapor deposition method. Examples include a physical vapor deposition method, a chemical vapor deposition method such as thermal CVD, plasma CVD, and optical CVD method. Further, the vapor deposition pattern can be formed by using a conventionally known vacuum vapor deposition apparatus or the like.

<Manufacturing method of organic semiconductor devices>
Next, a method for manufacturing an organic semiconductor device according to an embodiment of the present disclosure (hereinafter, referred to as a method for manufacturing an organic semiconductor device of the present disclosure) will be described. The method for manufacturing an organic semiconductor device of the present disclosure includes a step of forming a vapor deposition pattern on a vapor deposition object using a vapor deposition mask, and the vapor deposition mask of the present disclosure described above is used in the step of forming the vapor deposition pattern. It is characterized by.

The step of forming a vapor deposition pattern by a vapor deposition method using a vapor deposition mask is not particularly limited, and includes an electrode forming step of forming an electrode on a substrate, an organic layer forming step, a counter electrode forming step, a sealing layer forming step, and the like. , In each arbitrary step, a thin-film deposition pattern is formed using the vapor deposition pattern forming method of the present disclosure described above. For example, when the vapor deposition pattern forming method of the present disclosure described above is applied to the light emitting layer forming steps of each of the R (red), G (green), and B (blue) colors of the organic EL device, the vapor deposition pattern forming method of the present disclosure is applied to the substrate. A vapor deposition pattern of each color light emitting layer is formed. The method for manufacturing an organic semiconductor device of the present disclosure is not limited to these steps, and can be applied to any conventionally known step in the manufacture of an organic semiconductor device.

According to the method for manufacturing an organic semiconductor device of the present disclosure described above, it is possible to perform vapor deposition to form an organic semiconductor device in a state where the vapor deposition mask and the vapor deposition object are in close contact with each other without a gap, and a high-definition organic semiconductor can be performed. The element can be manufactured. Examples of the organic semiconductor device manufactured by the method for manufacturing an organic semiconductor device of the present disclosure include an organic layer, a light emitting layer, a cathode electrode, and the like of an organic EL device. In particular, the method for manufacturing an organic semiconductor device of the present disclosure can be suitably used for manufacturing an R (red), G (green), B (blue) light emitting layer of an organic EL device that requires high-definition pattern accuracy. can.

<< Manufacturing method of organic EL display >>
Next, a method for manufacturing an organic EL display (organic electroluminescence display) according to the embodiment of the present disclosure (hereinafter, referred to as a method for manufacturing the organic EL display of the present disclosure) will be described. In the method for manufacturing the organic EL display of the present disclosure, the organic semiconductor device manufactured by the method for manufacturing the organic semiconductor device of the present disclosure described above is used in the manufacturing process of the organic EL display.

Examples of the organic EL display using the organic semiconductor element manufactured by the method for manufacturing the organic semiconductor element of the present disclosure include a notebook computer (see FIG. 4A) and a tablet terminal (see FIG. 4B). , Mobile phones (see FIG. 4 (c)), smartphones (see FIG. 4 (d)), video cameras (see FIG. 4 (e)), digital cameras (see FIG. 4 (f)), smart watches (see FIG. 4 (f)). g) Examples of organic EL displays used in) and the like can be mentioned.

10 ... Metal mask 15 ... Metal mask opening 20 ... Resin mask 21 ... Groove 25 ... Resin mask opening 100 ... Vapor deposition mask

Claims (3)

Multiple grooves provided on the surface and
It has a resin mask opening that reaches the back surface from the bottom surface of each of the plurality of grooves and corresponds to a pattern to be produced by vapor deposition.
Each of the grooves comprises two or more resin mask openings and a resin mask that overlaps in the thickness direction.
A metal mask having a metal mask opening is laminated on the surface side of the resin mask.
The metal mask opening overlaps with the groove portion of the resin mask in the thickness direction.
The thickness of the portion of the resin mask without the groove is 3 μm or more and 8 μm or less.
The thickness of the metal mask is 5 μm or more and 35 μm or less.
The cross-sectional shape of the resin mask opening has a shape that expands in the direction in which the metal masks are laminated.
Thin-film mask. A method for manufacturing organic semiconductor devices.
Including a thin-film deposition pattern forming step of forming a thin-film deposition pattern on a vapor-deposited object using a thin-film deposition mask.
The vapor deposition mask used in the vapor deposition pattern forming step is the vapor deposition mask according to claim 1.
A method for manufacturing an organic semiconductor device. A method for manufacturing organic EL displays
An organic semiconductor device manufactured by the method for manufacturing an organic semiconductor device according to claim 2 is used.
A method for manufacturing an organic EL display.

Images