JP2018053348A - Vapor deposition mask, production method of organic semiconductor element, and production method of organic el display - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide: a vapor deposition mask capable of forming a high-definition vapor deposition pattern; a production method of an organic semiconductor element; and a production method of an organic EL display.SOLUTION: In a vapor deposition mask 100 having a groove part 21 provided on a surface 20a, and a resin mask opening part 25 reaching a rear surface 20b from a bottom surface 21a of the groove part 21, and corresponding to a pattern produced by vapor deposition, one groove part 21 includes a resin mask 20 superposed in the thickness direction on two or more resin mask opening parts 25. A production method of an organic semiconductor element using the vapor deposition mask 100, and a production method of an organic EL display are also provided.SELECTED DRAWING: Figure 1

Description

  Embodiments of the present disclosure relate to a deposition mask, a method for manufacturing an organic semiconductor element, and a method for manufacturing an organic EL display.

  Formation of a vapor deposition pattern using a vapor deposition mask is usually performed by bringing a vapor deposition mask provided with an opening corresponding to a pattern to be vapor-deposited and an object to be vapor-deposited, and allowing a vapor deposition material released from a vapor deposition source to pass through the opening. It is performed by adhering to a vapor deposition object.

  As a vapor deposition mask used for the formation of the vapor deposition pattern, for example, a metal mask having a resin mask opening having a resin mask opening corresponding to the pattern to be vapor deposited and a metal mask opening (sometimes referred to as a slit). A vapor deposition mask (for example, Patent Document 1) formed by laminating and is known.

Japanese Patent No. 5288072

  An embodiment of the present disclosure mainly provides a vapor deposition mask capable of forming a high-definition vapor deposition pattern, a method for manufacturing an organic semiconductor element, and a method for manufacturing an organic EL display.

  An evaporation mask according to an embodiment of the present disclosure includes a groove provided on the front surface, and a resin mask opening corresponding to a pattern to be formed by vapor deposition from the bottom surface of the groove to the back surface, and the one groove Includes a resin mask that overlaps two or more of the openings in the thickness direction.

  In the vapor deposition mask, a metal mask having a metal mask opening is laminated on the surface side of the resin mask, and the metal mask opening overlaps with the groove of the resin mask in the thickness direction. May be.

  According to the vapor deposition mask of this indication, a high-definition vapor deposition pattern can be formed.

(A) is a schematic sectional drawing which shows an example of the vapor deposition mask concerning embodiment of this indication, (b) is an example when the vapor deposition mask concerning embodiment of this indication is planarly viewed from the surface side of the resin mask FIG. It is a schematic sectional drawing which shows an example of the vapor deposition mask concerning another embodiment of this indication. (A) is a schematic sectional drawing which shows an example of the vapor deposition mask concerning other embodiment of this indication, (b) is planar view from the surface side of the resin mask of the vapor deposition mask concerning other embodiment of this indication. It is a front view which shows an example when it did. It is a figure which shows an example of the device which has an organic EL display.

  Embodiments of the present invention will be described below with reference to the drawings. Note that the present invention can be implemented in many different modes, and is not construed as being limited to the description of the embodiments exemplified below. In addition, the drawings may be schematically represented with respect to the width, thickness, shape, and the like of each part in comparison with actual aspects for the sake of clarity of explanation, but are merely examples, and the interpretation of the present invention is not limited. It is not limited. In addition, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description may be omitted as appropriate. In addition, for convenience of explanation, description will be made using words such as upward or downward, but the vertical direction may be reversed. The same applies to the left-right direction.

<Evaporation Mask According to First Embodiment>
FIG. 1A is a schematic cross-sectional view showing an example of a vapor deposition mask according to an embodiment of the present disclosure, and FIG. 1B is a plan view of the vapor deposition mask according to the embodiment of the present disclosure from the surface side of the resin mask. It is a front view which shows an example when it did. In FIG. 1B, the grooves formed in the resin mask are omitted.

  As illustrated in FIGS. 1A and 1B, the vapor deposition mask 100 according to the first embodiment of the present disclosure is configured by only the resin mask 20. Hereinafter, the resin mask 20 constituting the vapor deposition mask 100 according to the first embodiment of the present disclosure will be described.

(Resin mask)
The resin mask 20 includes a groove portion 21 provided on the front surface 20a, and a resin mask opening 25 corresponding to a pattern to be formed by vapor deposition from the bottom surface 21a of the groove portion 21 to the back surface 20b. Overlaps two or more resin mask openings 25 in the thickness direction. In FIG. 1A, one groove 21 overlaps three resin mask openings 25 in the thickness direction.

  According to the vapor deposition mask 100 according to the first embodiment of the present disclosure, the thickness of the portion where the resin mask opening 25 corresponding to the pattern to be vapor-deposited is formed (reference numeral in FIG. 1A). x) can be made thinner than the entire thickness of the resin mask 20 (symbol y in FIG. 1A), and so-called shadow generation can be effectively suppressed. On the other hand, according to the vapor deposition mask 100 (resin mask 20) according to the first embodiment of the present disclosure, the thickness (y) of the portion where the resin mask opening 25 corresponding to the pattern to be vapor deposited is not formed. Therefore, the rigidity of the entire vapor deposition mask 100 (resin mask 20) can be ensured. Furthermore, according to the vapor deposition mask 100 (resin mask 20) according to the first embodiment of the present disclosure, the material is composed of a single material, and therefore, compared with the vapor deposition mask formed by stacking different materials. There is little risk of wrinkling or misalignment caused by the stress difference between the two. In addition, a shadow means that a part of the vapor deposition material emitted from the vapor deposition source collides with the inner wall surface of the resin mask opening 25 of the resin mask 20 or the inner wall surface of the metal mask opening of the metal mask to be described later. By not reaching the object, it means a phenomenon in which an undeposited portion having a film thickness thinner than the target vapor deposition film thickness occurs.

  There is no limitation on the material of the resin mask 20 constituting the vapor deposition mask 100 according to the first embodiment of the present disclosure. For example, the high-definition groove 21 and the resin mask opening 25 can be formed by laser processing or the like. It is preferable to use a lightweight material that has a small dimensional change rate and moisture absorption rate with heat and time. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene- Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, and ionomer resin. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material having both conditions is particularly preferable. . By using this resin material as a resin mask, the dimensional accuracy of the groove 21 and the resin mask opening 25 can be improved, and the rate of dimensional change and moisture absorption over time and heat can be reduced.

  Further, the thickness of the resin mask 20 is not particularly limited, but in the case of further improving the effect of suppressing the generation of shadows, the thickness of the entire resin mask 20 (symbol y in FIG. 1A) is 65 μm or less. It is preferable that it is less than 10 μm. Although there is no particular limitation on the preferable range of the lower limit value, if the thickness of the entire resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation or the like increases when the groove 21 is formed. . In particular, when the thickness of the entire resin mask 20 is 3 μm or more and less than 50 μm, preferably 3 μm or more and less than 10 μm, more preferably 3 μm or more and 8 μm or less, the influence of shadows when forming a high-definition pattern exceeding 400 ppi is further increased. It can be effectively prevented.

  Further, the cross-sectional shape of the resin mask opening 25 is not particularly limited, and the end faces of the resin mask that form the resin mask opening 25 may be substantially parallel to each other, as shown in FIG. The resin mask opening 25 preferably has a cross-sectional shape that expands toward the vapor deposition source, in other words, a shape having a gradient. The gradient can be set as appropriate in consideration of the thickness of the resin mask 20 and the like, but the front end on the back surface side of the resin mask opening 25 of the resin mask and the bottom surface side of the groove portion on the resin mask opening portion of the resin mask. Is preferably in the range of 5 ° to 85 °, more preferably in the range of 15 ° to 75 °, and 25 ° to 65 °. More preferably, it is in the range. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable. In the illustrated embodiment, the end face forming the resin mask opening 25 has a linear shape, but is not limited to this, and has an outwardly convex curved shape, that is, the resin mask opening. The entire shape of 25 may be a bowl shape. Further, it may be the opposite, that is, it may have a convex curved shape.

  Further, the planar shape of the resin mask opening 25, in other words, the opening shape is not particularly limited, and may be rectangular as shown in FIG. It may be a shape having a curvature such as a circle or an ellipse. In addition, it can be said that the rectangular or polygonal opening shape is a preferable opening shape of the resin mask opening 25 in that the light emitting area can be increased as compared with the opening shape having a curvature such as a circle or an ellipse.

  Further, the cross-sectional shape of the groove portion 21 is not particularly limited, and the end faces facing each other of the resin mask forming the groove portion 21 may be substantially parallel to each other. Similarly, as shown in FIG. 1, the shape may be widened toward the vapor deposition source. Generation of a shadow can be effectively suppressed by using a shape having such a gradient. In this case, the angle of the gradient is not particularly limited, and may be, for example, approximately the same as that of the resin mask opening 25.

  The depth of groove 21 (yx in FIG. 1A) is not particularly limited, and can be appropriately designed in consideration of thickness y of resin mask 20. For example, the depth (y−x) of the groove 21 may be designed so that the thickness x of the portion where the resin mask opening 25 is formed is about 3 μm to 25 μm.

  Further, the planar shape of the groove portion 21 is not particularly limited, and can be appropriately selected from a rectangular shape, a rhombus shape, a polygonal shape, a shape having a curvature such as a circle or an ellipse, and the like, similar to the planar shape of the resin mask opening 25 described above. it can.

  There are no particular limitations on the method of manufacturing such a resin mask 20, and any method can be employed as long as the resin mask 20 having the intended shape can be manufactured. For example, the groove 21 and the resin mask opening 25 may be formed on the resin plate using a laser processing method, or the groove 21 and the resin mask opening 25 may be formed by an etching method. On the other hand, the resin mask 20 may be formed using a 3D printer. Further, a laser processing method, an etching method, or a 3D printer may be used in combination.

<Deposition Mask According to Second Embodiment>
FIG. 2 is a schematic cross-sectional view illustrating an example of a deposition mask according to another embodiment of the present disclosure.

  As shown in FIG. 2, the vapor deposition mask 100 according to the second embodiment of the present disclosure is different from the vapor deposition mask 100 according to the first embodiment in that the inner wall surface of the groove portion 21 is stepped. All other configurations are the same.

  In the vapor deposition mask 100 according to the embodiment of the present disclosure, as illustrated in FIG. 2, the inner wall surface 21 b of the groove may have a stepped shape. In this case, the number of stages is not particularly limited, and may be one as shown in FIG. 2, or more stages may be provided. In this way, by forming the inner wall surface 21b of the groove portion in a stepped shape, the thickness of the resin mask opening 25 is formed thin while ensuring the strength by increasing the thickness of the entire resin mask 20. Therefore, the processing time of the resin mask opening 25 can be shortened, and the demand for higher definition can be met. Furthermore, it is possible to suppress the occurrence of shadows.

<Evaporation Mask According to Third Embodiment>
FIG. 3A is a schematic cross-sectional view illustrating an example of a vapor deposition mask according to another embodiment of the present disclosure, and FIG. 3B illustrates a vapor deposition mask according to another embodiment of the present disclosure as a surface of a resin mask. It is a front view which shows an example when planarly viewed from the side. In FIG. 3B, the groove formed in the resin mask is omitted.

  As shown in FIGS. 3A and 3B, the vapor deposition mask 100 according to the third embodiment is a metal having a metal mask opening 15 on the surface side of the resin mask 20 described in the first embodiment. The mask 10 is laminated, and the metal mask opening 15 is characterized by overlapping with the groove 21 of the resin mask 20 in the thickness direction. As described above, the vapor deposition mask 100 according to the embodiment of the present disclosure may have a stacked structure of the metal mask 10 and the resin mask 20.

  Here, the resin mask 20 in the vapor deposition mask 100 according to the third embodiment is the same as the resin mask 20 in the vapor deposition mask 100 according to the first embodiment and the second embodiment, and will be described here. Is omitted.

(Metal mask)
As shown in FIG. 3A, the metal mask 10 is laminated on the surface side of the resin mask 20. The metal mask 10 is made of metal, and a metal mask opening 15 extending in the vertical direction or the horizontal direction is disposed as shown in FIG. The arrangement example of the metal mask openings 15 is not particularly limited, and the metal mask openings 15 extending in the vertical direction and the horizontal direction may be arranged in a plurality of rows in the vertical direction and the horizontal direction, and the metal extending in the vertical direction. The mask openings 15 may be arranged in a plurality of rows in the horizontal direction, and the metal mask openings extending in the horizontal direction may be arranged in a plurality of rows in the vertical direction. Further, only one row may be arranged in the vertical direction or the horizontal direction. Further, the plurality of metal mask openings 15 may be randomly arranged. Further, the number of metal mask openings 15 may be one. In the present specification, “vertical direction” and “lateral direction” mean the vertical and horizontal directions in the drawing, and are any of the longitudinal direction and the width direction of the vapor deposition mask, resin mask, and metal mask. May be. For example, the longitudinal direction of the vapor deposition mask, the resin mask, and the metal mask may be “vertical direction”, and the width direction may be “vertical direction”.

  The material of the metal mask 10 is not particularly limited, and any conventionally known material can be appropriately selected and used in the field of the evaporation mask, and examples thereof include metal materials such as stainless steel, iron-nickel alloy, and aluminum alloy. . Among them, an invar material that is an iron-nickel alloy can be suitably used because it is less deformed by heat.

  Although the thickness of the metal mask 10 is not particularly limited, it is preferably 100 μm or less, more preferably 50 μm or less, and more preferably 35 μm or less in order to more effectively prevent the occurrence of shadows. Particularly preferred. When the thickness is less than 5 μm, the risk of breakage and deformation increases and handling tends to be difficult.

  The cross-sectional shape of the metal mask opening 15 formed in the metal mask 10 is not particularly limited, but may be a shape that expands toward the evaporation source as shown in FIG. preferable. More specifically, the angle formed by the straight line connecting the lower bottom tip of the metal mask opening and the upper bottom tip of the metal mask opening 15 and the bottom surface of the metal mask 10, in other words, the metal mask opening. In the thickness direction cross section of the inner wall surface constituting the portion 15, the angle formed between the inner wall surface of the metal mask opening 15 and the surface of the metal mask 10 on the side in contact with the resin mask 20 (in the illustrated embodiment, the lower surface of the metal mask) is It is preferably within the range of 5 ° to 85 °, more preferably within the range of 15 ° to 80 °, and even more preferably within the range of 25 ° to 65 °. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable.

  In the form shown in FIG. 3B, the opening shape when the metal mask opening 15 is viewed in plan is a rectangular shape, but the opening shape is not particularly limited, and the opening of the metal mask opening 15 is not limited. The shape may be any shape such as a trapezoidal shape or a circular shape.

  The method for manufacturing the metal mask 10 is not particularly limited, and any method may be used as long as the metal mask 10 having an intended shape can be manufactured. For example, various etching methods may be used to form the metal mask opening 15 on the metal plate by etching, while various plating methods may be used to form a portion other than the metal mask opening 15 by plating. Alternatively, the metal mask opening may be formed by various metal processing methods.

  The method of laminating the metal mask 10 on the surface side of the resin mask 20 is not particularly limited, and the resin mask 20 and the metal mask 10 may be bonded using various adhesives, and have self-adhesiveness. A resin mask may be used. Resin mask 20 and metal mask 10 may have the same size or different sizes. If the resin mask 20 is made smaller than the metal mask 10 and the outer peripheral portion of the metal mask 10 is exposed in consideration of the optional fixing to the frame thereafter, the metal mask 10 It is preferable because it can be easily fixed to the frame.

<Vapor deposition method using vapor deposition mask>
The vapor deposition method used for forming the vapor deposition pattern using the vapor deposition mask of the present disclosure described above is not particularly limited, and examples thereof include reactive sputtering, vacuum vapor deposition, ion plating, and electron beam vapor deposition. Examples thereof include a physical vapor deposition method, a chemical vapor deposition method such as thermal CVD, plasma CVD, and photo-CVD method (Chemical Vapor Deposition). The vapor deposition pattern can be formed using a conventionally known vacuum vapor deposition apparatus or the like.

<Method for manufacturing organic semiconductor element>
Next, a method for manufacturing an organic semiconductor element according to an embodiment of the present disclosure (hereinafter referred to as an organic semiconductor element manufacturing method of the present disclosure) will be described. The method for producing an organic semiconductor element of the present disclosure includes a step of forming a vapor deposition pattern on a vapor deposition object using a vapor deposition mask, and the vapor deposition mask of the present disclosure described above is used in the step of forming the vapor deposition pattern. It is characterized by.

  There is no particular limitation on the process of forming a vapor deposition pattern by a vapor deposition method using a vapor deposition mask. In each optional step, a vapor deposition pattern is formed using the vapor deposition pattern forming method of the present disclosure described above. For example, when the deposition pattern forming method of the present disclosure described above is applied to each of the R (red), G (green), and B (blue) light emitting layer forming steps of the organic EL device, The vapor deposition pattern of each color light emitting layer is formed. In addition, the manufacturing method of the organic-semiconductor element of this indication is not limited to these processes, It is applicable to the arbitrary processes in manufacture of a conventionally well-known organic-semiconductor element.

  According to the method for manufacturing an organic semiconductor element of the present disclosure described above, it is possible to perform vapor deposition for forming an organic semiconductor element in a state where the vapor deposition mask and the vapor deposition object are closely adhered to each other, and a high-definition organic semiconductor An element can be manufactured. As an organic semiconductor element manufactured with the manufacturing method of the organic semiconductor element of this indication, the organic layer, light emitting layer, cathode electrode, etc. of an organic EL element can be mentioned, for example. In particular, the method for manufacturing an organic semiconductor element of the present disclosure is preferably used for manufacturing R (red), G (green), and B (blue) light emitting layers of organic EL elements that require high-definition pattern accuracy. it can.

<< Organic EL Display Manufacturing Method >>
Next, a method for manufacturing an organic EL display (organic electroluminescence display) according to an embodiment of the present disclosure (hereinafter referred to as a method for manufacturing an organic EL display of the present disclosure) will be described. The manufacturing method of the organic EL display of the present disclosure uses the organic semiconductor element manufactured by the manufacturing method of the organic semiconductor element of the present disclosure described above in the manufacturing process of the organic EL display.

  Examples of the organic EL display using the organic semiconductor element manufactured by the organic semiconductor element manufacturing method of the present disclosure include a notebook personal computer (see FIG. 4A) and a tablet terminal (see FIG. 4B). Mobile phones (see FIG. 4C), smartphones (see FIG. 4D), video cameras (see FIG. 4E), digital cameras (see FIG. 4F), smart watches (FIG. Examples thereof include organic EL displays used in g).

DESCRIPTION OF SYMBOLS 10 ... Metal mask 15 ... Metal mask opening part 20 ... Resin mask 21 ... Groove part 25 ... Resin mask opening part 100 ... Deposition mask

Claims (4)

A groove provided on the surface;
A resin mask opening corresponding to a pattern to be deposited and reached from the bottom surface of the groove portion to the back surface,
One groove portion is a resin mask that overlaps two or more resin mask openings in the thickness direction,
Vapor deposition mask containing. A metal mask having a metal mask opening is laminated on the surface side of the resin mask,
The metal mask opening overlaps with the groove of the resin mask in the thickness direction.
The vapor deposition mask of Claim 1. A method for producing an organic semiconductor element, comprising:
Including a vapor deposition pattern forming step of forming a vapor deposition pattern on a vapor deposition object using a vapor deposition mask;
The vapor deposition mask used in the vapor deposition pattern forming step is the vapor deposition mask according to claim 1 or 2.
A method for producing an organic semiconductor element. An organic EL display manufacturing method comprising:
An organic semiconductor element manufactured by the method for manufacturing an organic semiconductor element according to claim 3 is used.
Manufacturing method of organic EL display.

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