JP6909195B2 - Semiconductor inspection equipment - Google Patents

Description

The present invention relates to a semiconductor inspection device that inspects a semiconductor device.

Conventionally, an apparatus for inspecting a semiconductor device while applying a test signal has been used. For example, in Patent Document 1 below, a device including a galvanometer mirror, two optical fibers, and a multifiber turret that can be optically coupled to them is known, and one of the optical fibers is a laser scanning module (a laser scanning module (). Hereinafter referred to as "LSM"), the other optical fiber is optically connected to a single photon detector. In such a device, it is possible to switch between inspection of a semiconductor device by LSM and emission measurement by a single photon detector.

U.S. Pat. No. 2009/02954414

In the above-mentioned device for inspecting a conventional semiconductor device, it is desired to set an optimum optical system for each optical element. That is, when the optical elements share an optical system, the spatial accuracy of the optical path in each optical element tends to decrease.

Therefore, the present invention has been made in view of such a problem, and provides a semiconductor inspection apparatus capable of inspecting a semiconductor device with high accuracy by improving the spatial accuracy of an optical path in a plurality of optical elements. The purpose is to do.

In order to solve the above problems, the semiconductor inspection device according to one embodiment of the present invention is a semiconductor inspection device that inspects a semiconductor device, and is a first light source that generates light to irradiate the semiconductor device and a first light source. A light guide element optically connected to the light guide element, a pair of galvano mirrors provided at positions optically connectable via the first light source and the light guide element, and a pair of galvano mirrors internally connected to the light guide element. A housing having a first mounting portion for mounting an optical element provided at a position where it can be optically connected to a pair of galvano mirrors, and a control unit for controlling the runout angle of the pair of galvano mirrors. The control unit has a first optical path that passes through a pair of galvanometer mirrors and a light guide element, and a second optical path that passes through a pair of galvanometer mirrors and a first mounting portion. The runout angle is controlled so as to switch between the optical path and the runout angle so that the runout angle when switching to the first optical path and the runout angle when switching to the second optical path do not overlap. To control.

According to the semiconductor inspection apparatus of the above embodiment, the runout angle of the pair of galvanometer mirrors is controlled so as to switch the optical path optically connected to the semiconductor device between the first optical path and the second optical path. As a result, the measurement of the semiconductor device using the first light source and the light guide element and the inspection of the semiconductor device using the optical element attached to the first mounting portion can be switched and executed. At this time, since the runout angle of the galvano mirror when switching to the first optical path and the runout angle of the galvano mirror when switching to the second optical path are controlled so as not to overlap, the optical system of each measurement system As a result of being able to independently set the optimum state, the spatial accuracy of the optical path in each inspection system can be improved. As a result, the semiconductor device can be inspected with high accuracy.

The semiconductor inspection device of the above embodiment may further include a first photodetector for detecting light from the semiconductor device, and the light guide element may be optically connected to the first photodetector. In this case, the measurement of the light of the semiconductor device using the first light source, the first photodetector, and the light guide element is switched between the inspection of the semiconductor device using the optical element attached to the first mounting portion. To be made feasible.

Further, a second photodetector for detecting the light from the semiconductor device is further provided, and the second photodetector is attached to the first mounting portion to detect the light via the second optical path. It may be possible. In this case, when the optical path optically connected to the semiconductor device is switched to the second optical path, the light from the semiconductor device can be measured using the second photodetector.

Further, the second photodetector may be attached to the first attachment portion via a collimator lens and an optical fiber. In this case, when the optical path optically connected to the semiconductor device is switched to the second optical path, the light from the semiconductor device can be measured by the second photodetector via the collimator lens and the optical fiber. can.

Further, a second light source for generating light to irradiate the semiconductor device is further provided, and the second light source can irradiate light via the second optical path by being attached to the first mounting portion. You may be. In this case, when the optical path optically connected to the semiconductor device is switched to the second optical path, the semiconductor device can be inspected by irradiating the semiconductor device with light using the second light source.

Furthermore, the second light source may be attached to the first attachment portion via a collimator lens and an optical fiber. In this case, when the optical path optically connected to the semiconductor device is switched to the second optical path, the semiconductor device is irradiated with light using the second light source via the collimator lens and the optical fiber to irradiate the semiconductor device with light. Can be inspected.

Further, the second light source for generating the light to irradiate the semiconductor device, the second photodetector for detecting the light from the semiconductor device, and the second light source and the second photodetector are optically connected. Further, the optical path dividing element may be further provided, and the optical path dividing element may be attached to the first attachment portion so that light can be irradiated and / or detected via the second optical path. In this case, when the optical path optically connected to the semiconductor device is switched to the second optical path, the light from the semiconductor device can be measured while irradiating the semiconductor device with light using the second light source. can.

Furthermore, the housing further has a second mounting portion for mounting an optical element provided at a position where it can be optically connected to the pair of galvano mirrors, and the control unit includes a first optical path and a first optical path. The runout angle is controlled so as to switch between the second optical path and the third optical path passing through the pair of galvanometer mirrors and the second mounting portion, and the runout angle when switching to the first optical path and the first The runout angle may be controlled so that the runout angle when switching to the second optical path and the runout angle when switching to the third optical path do not overlap. In this case, the optical path optically connected to the semiconductor device is switched to the third optical path, so that the inspection of the semiconductor device using the optical element attached to the second mounting portion can be switched and executed. At this time, the runout angle of the galvano mirror when switching to the first optical path, the runout angle of the galvano mirror when switching to the second optical path, and the runout angle of the galvano mirror when switching to the third optical path are Since it is controlled so as not to overlap, the optical system of each inspection system can be independently set to the optimum state, and as a result, the spatial accuracy of the optical path in each inspection system can be improved. As a result, the semiconductor device can be inspected with high accuracy.

Further, the light guide element may be a mirror. Further, the mirror as a light guide element is a dichroic mirror, and the housing may further have a third mounting portion for mounting the optical element on an extension line connecting the pair of galvano mirrors and the dichroic mirror. good. In this case, when the optical path optically connected to the semiconductor device is switched to the first optical path, the semiconductor device can be inspected using the optical element attached to the third mounting portion.

Further, a third light source optically connected to the light guide element may be further provided. In this way, when the optical path optically connected to the semiconductor device is switched to the first optical path, it is possible to measure the light of the semiconductor device while irradiating the semiconductor device with light using the third light source. Will be done.

Furthermore, the second photodetector may be a superconducting single photon detector.

According to the present invention, a semiconductor device can be inspected with high accuracy by improving the spatial accuracy of the optical path in a plurality of optical elements.

It is a block diagram of the inspection system which concerns on 1st Embodiment of this invention. It is a figure which shows the structure in the state of switching to the 1st inspection system, and the 1st optical path in the optical apparatus 31A of FIG. It is a figure which shows the structure in the state of switching to the 2nd inspection system, and the 2nd optical path in the optical apparatus 31A of FIG. It is a graph which shows the change range of the swing angle of a pair of galvanometer mirrors 44a, 44b controlled by the control unit 21a of the computer 21 of FIG. It is a figure which shows the structure of the optical apparatus 31B which concerns on 2nd Embodiment. It is a figure which shows the structure of the optical apparatus 31C which concerns on 3rd Embodiment. It is a figure which shows the structure of the optical apparatus 31D which concerns on 4th Embodiment. It is a graph which shows the change range of the swing angle of a pair of galvanometer mirrors 44a, 44b controlled by the control unit 21a of the computer 21 which concerns on 4th Embodiment. It is a figure which shows the structure of the optical apparatus 31E which concerns on 4th Embodiment. It is a figure which shows the structure of the optical apparatus 31F which concerns on a modification. It is a figure which shows the structure of the optical apparatus 31G which concerns on a modification. It is a figure which shows the structure of the optical apparatus 31H which concerns on a modification. It is a figure which shows the structure of the optical apparatus 31I which concerns on a modification.

Hereinafter, preferred embodiments of the semiconductor inspection apparatus according to the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same or corresponding parts are designated by the same reference numerals, and duplicate description will be omitted.
[First Embodiment]

As shown in FIG. 1, the inspection system 1 according to the first embodiment is for inspecting the semiconductor device D, such as identifying a failure location in the semiconductor device D which is a device under test (DUT). It is a semiconductor inspection device. Further, the inspection system 1 may perform a process of identifying the faulty part, a process of marking the faulty part around the faulty part, and the like. With the marking, the failure location identified by the inspection system 1 can be easily grasped in the subsequent process of the failure analysis.

The semiconductor device D includes, for example, an individual semiconductor element (discrete), an optelectronic element, a sensor / actuator, a logic LSI (Large Scale Integration), a memory element, a linear IC (Integrated Circuit), or a mixed device thereof. be. Individual semiconductor elements include diodes, power transistors and the like. The logic LSI is composed of a transistor having a MOS (Metal-Oxide-Semiconductor) structure, a transistor having a bipolar structure, and the like. Further, the semiconductor device D may be a package including the semiconductor device, a composite substrate, or the like. The semiconductor device D is configured by forming a metal layer on a substrate. As the substrate of the semiconductor device D, for example, a silicon substrate is used. The semiconductor device D is mounted on the sample stage 40.

The inspection system 1 includes a signal application unit 11, a computer 21, a display unit 22, an input unit 23, and an optical device 31A.

The signal application unit 11 is electrically connected to the semiconductor device D via a cable, and applies a stimulus signal to the semiconductor device D. The signal application unit 11 is, for example, a tester unit, which is operated by a power source (not shown) and repeatedly applies a stimulus signal such as a predetermined test pattern to the semiconductor device D. The signal application unit 11 may apply a modulated current signal or may apply a CW (continuous wave) current signal. The signal application unit 11 is electrically connected to the computer 21 via a cable, and applies a stimulus signal such as a test pattern specified by the computer 21 to the semiconductor device D. The signal application unit 11 does not necessarily have to be electrically connected to the computer 21. When the signal application unit 11 is not electrically connected to the computer 21, it determines a stimulus signal such as a test pattern by itself, and applies the stimulus signal such as the test pattern to the semiconductor device D. The signal application unit 11 may be a pulse generator that generates a predetermined signal and applies it to the semiconductor device D.

The computer 21 is electrically connected to the optical device 31A via a cable. The computer 21 is a computer including, for example, a processor (CPU: Central Processing Unit), and storage media such as RAM (Random Access Memory), ROM (Read Only Memory), and HDD (Hard Disk Drive). The computer 21 executes processing by the processor on the data stored in the storage medium. Further, the computer 21 may be composed of a microcomputer, an FPGA (Field-Programmable Gate Array), a cloud server, or the like. The computer 21 creates a pattern image or an analysis image (for example, a light emitting image) based on the detection signal input from the optical device 31A. Here, it is difficult to specify a detailed position in the pattern of the semiconductor device D only from the analysis image. Therefore, the computer 21 generates a superimposed image in which the pattern image based on the reflected light from the semiconductor device D and the analysis image of the semiconductor device D are superimposed as the analysis image.

Further, the computer 21 outputs the created analysis image to the display unit 22. The display unit 22 is a display device such as a display for showing the analysis image or the like to the user. The display unit 22 displays the input analysis image. In this case, the user confirms the position of the failure location from the analysis image displayed on the display unit 22, and inputs information indicating the failure location to the input unit 23. The input unit 23 is an input device such as a keyboard and a mouse that receives input from the user. The input unit 23 outputs the information indicating the failure location received from the user to the computer 21. The computer 21, the display unit 22, and the input unit 23 may be smart device terminals.

Next, the configuration of the optical device 31A will be described with reference to FIGS. 2 and 3. FIG. 2 is a diagram showing the configuration and the first optical path of the optical device 31A in the state of being switched to the first inspection system, and FIG. 3 is a diagram showing the configuration of the optical device 31A in the state of being switched to the second inspection system. It is a figure which shows the structure and the 2nd optical path.

As shown in FIGS. 2 and 3, the optical device 31A includes a housing 32, a light source (first light source) 33, a photodetector (first photodetector) 34, and a photodetector (second light detector). 35, an internal optical system 36 arranged inside the housing 32, and an external optical system 37 arranged outside the housing 32.

The light source 33 is operated by a power source (not shown) to generate light that illuminates the semiconductor device D for generating a pattern image of the semiconductor device D. The light source 33 is an incoherent light source such as an LED (Light Emitting Diode) or an SLD (Super Luminescent Diode) light source. The light source 33 may be a coherent light source such as a laser. The light output from the light source 33 is applied to the semiconductor device D via the internal optical system 36 and the external optical system 37.

The photodetector 34 detects the reflected light from the semiconductor device D and outputs the detection signal of the reflected light of the semiconductor device D to the computer 21. For example, the photodetector 34 is a light receiving element such as a photomultiplier tube, PD (Photodiode), or APD (Avalanche Photodiode). The reflected light from the semiconductor device D is incident on the photodetector 34 via the external optical system 37 and the internal optical system 36.

When a stimulus signal such as a test pattern is applied to the semiconductor device D, the photodetector 35 detects the light emission generated by the semiconductor device D and outputs the light emission detection signal of the semiconductor device D to the computer 21. The photodetector 35 is, for example, an SSPD (Superconducting Single Photon Detector), a photomultiplier tube, or a SiPM (Silicon Photomultipliers), which is a superconducting single photon detector. Light from the semiconductor device D is incident on the photodetector 35 via the external optical system 37 and the internal optical system 36.

The internal optical system 36 includes optical fibers 38a, 38b, 38c, collimator lenses 39a, 39b, 39c, mirror 40a, light guide element (mirror) 40b, polarization beam splitter (hereinafter referred to as “PBS”) 41, 1/4 wavelength. It includes a plate 42, a variable pupil 43, a pair of galvanometer mirrors 44a and 44b, and a pupil relay lens 45.

One end of the optical fiber 38a, 38b, 38c is optically connected to the light source 33, the photodetector 34, and the photodetector 35, respectively, outside the housing 32, and the other end of the optical fiber 38a, 38b, 38c. Are optically connected to the collimator lenses 39a, 39b, 39c, respectively, inside the housing 32. The collimator lens 39a converts the light emitted from the light source 33 into parallel light, and the collimator lenses 39b and 39c convert the light incident on the light detector 34 and the light detector 35 into parallel light, respectively. In this way, by receiving the light from the optical scanning unit described later by the collimating lens independent for each optical fiber, the optimum adjustment can be made according to the wavelength or the focus of the light from the semiconductor device D.

The mirror 40a is arranged on the light output side of the collimator lens 39a inside the housing 32, and the PBS 41 is arranged on the light input side of the collimator lens 39b. , Mirrors 40b are arranged side by side in a straight line in this order. The mirror 40a reflects the light output from the light source 33 toward the PBS 41. The PBS 41 transmits the linearly polarized light of the light output from the light source 33 toward the mirror 40b, and the 1/4 wave plate 42 converts the linearly polarized light into circularly polarized light and outputs it toward the mirror 40b. Further, the 1/4 wave plate 42 converts the reflected light from the semiconductor device D incident from the mirror 40b side into linearly polarized light in a direction orthogonal to the linearly polarized light of the light output from the light source 33, and the PBS 41 displays the light. The linearly polarized light of the reflected light is reflected toward the light detector 34. The variable pupil 43 is provided so as to be able to move in and out of the optical path between the mirror 40a and the mirror 40b, and is for changing the size of the pupil.

As described above, the mirror 40b is optically connected to the light source 33 and the photodetector 34. Specifically, the mirror 40b reflects the light output from the light source 33 and guides the light toward the pair of galvanometer mirrors 44a and 44b, which are optical scanning units. At the same time, the mirror 40b receives the reflected light from the semiconductor device D via the pair of galvanometer mirrors 44a and 44b, and receives the reflected light from the variable pupil 43, the 1/4 wavelength plate 42, the PBS 41, and the collimator lens 39b. , The light is incident on the light detector 34 via the optical fiber 38b. Although a mirror is used as the light guide element in this embodiment, an optical fiber or the like can be used as long as it is an optical element capable of guiding light between the light source 33 and / or the photodetector 34 and the pair of galvanometer mirrors 44a and 44b. May be used.

The pair of galvanometer mirrors 44a and 44b are configured to be optically connectable to the light source 33 and the photodetector 34 via the mirror 40b, and are optically connected to the external optical system 37 via the pupil relay lens 45. Has been done. That is, the pair of galvanometer mirrors 44a and 44b are optical scanning units that are arranged in the direction of reflection of light from the light source 33 of the mirror 40b and can reflect the light while scanning it two-dimensionally. It has a configuration in which two galvanometer mirrors whose runout angle can be changed around the axis are combined. The pair of galvanometer mirrors 44a and 44b can two-dimensionally scan the light emitted to the semiconductor device D on the semiconductor device. In addition, the pair of galvanometer mirrors 44a and 44b can guide the reflected light or light emission at a predetermined point of the semiconductor device D toward a predetermined position of the mirror 40b or the collimator lens 39c while two-dimensionally selecting the position. can. Here, the semiconductor device D may be configured to illuminate the semiconductor device D two-dimensionally by reflecting a separately prepared light source with one mirror while the pair of galvanometer mirrors 44a and 44b are stopped. The runout angles of the pair of galvanometer mirrors 44a and 44b are configured to be controllable by the control unit 21a of the computer 21.

The collimator lens 39c is held inside the housing 32 by a mounting portion (first mounting portion) 46 provided at a position on the housing 32 that can be optically connected to the pair of galvanometer mirrors 44a and 44b. There is. The mounting portion 46 forms a tubular member and is a portion for mounting an optical element such as a collimator lens inside the housing 32. The other end of the optical fiber 38c is optically connected to the collimator lens 39c inside the mounting portion 46.

The external optical system 37 includes mirrors 47a, 47b, 47c, a pupil relay lens 48, and an objective lens unit 49. The external optical system 37 guides the light from the light source 33 and causes it to enter the semiconductor device D, and guides the reflected light and light emitted from the semiconductor device D and causes them to enter the internal optical system 36. That is, the light from the light source 33 incident from the internal optical system 36 is reflected by the mirror 47a and then transmitted through the pupil relay lens 48, and is sequentially reflected by the mirrors 47b and 47c and then passed through the objective lens unit 49 to the semiconductor device. D is irradiated. On the other hand, the reflected light or light emission in the semiconductor device D is sequentially reflected by the mirrors 47c and 47b after passing through the objective lens unit 49, transmitted through the pupil relay lens 48, and then reflected by the mirror 47a, whereby the internal optical system It is incident on 36. Here, the objective lens unit 49 may have a plurality of objective lenses having different magnifications and may be configured to be switched by a turret.

The optical device 31A having the above-described configuration can be controlled by a computer 21 so as to switch an optical path optically connected to the semiconductor device D. That is, the computer 21 has a control unit 21a as a functional component.

The control unit 21a of the computer 21 controls the deflection angles of the pair of galvanometer mirrors 44a and 44b to create an optical path optically connected to the semiconductor device D by the pair of galvanometer mirrors 44a and 44b and the external optical system 37. The first optical path L1 (FIG. 2) including the internal optical system 36 via the mirror 40b, and the internal optical system via the galvano mirrors 44a and 44b paired with the external optical system 37 and the collimator lens 39c in the mounting portion 46. The runout angles of the pair of galvanometer mirrors 44a and 44b are controlled so as to switch between the second optical path L2 including 36 and the second optical path L2 (FIG. 3). Specifically, when the user instructs the control unit 21a to execute the inspection of the reflected light via the input unit 23, the control unit 21a switches to the first optical path L1 and emits light from the user via the input unit 23. When it is instructed to perform the inspection, it switches to the second optical path L2. At the same time, the control unit 21a two-dimensionally scans the light emitted to the semiconductor device D on the semiconductor device D by sequentially changing the deflection angles of the pair of galvanometer mirrors 44a and 44b within a predetermined angle range. In addition to controlling the semiconductor device D, the reflected light or light emission at a predetermined point is controlled so as to select a position and guide the light while scanning two-dimensionally.

FIG. 4 shows an example of the change range of the runout angle of the pair of galvanometer mirrors 44a and 44b controlled by the control unit 21a of the computer 21. In the graph of FIG. 4, the horizontal axis H indicates the unidirectional deflection angle of the pair of galvanometer mirrors 44a and 44b controlled by the control unit 21a, and the vertical axis V indicates the pair of galvanometer mirrors controlled by the control unit 21a. It shows the runout angle in the other direction perpendicular to one direction of 44a and 44b. In this embodiment, one direction is the horizontal direction and the other direction is the vertical direction. When the control unit 21a is instructed to execute the inspection of the reflected light, the control unit 21a has the deflection angles of the pair of galvanometer mirrors 44a and 44b at the preset offset values (H, V) = (H1, V1). Is set, and the runout angle is sequentially changed within the angle range W1 of a predetermined angle range (H1 ± ΔH1, V1 ± ΔV1) in one direction and the other direction centered on the offset value (H1, V1). Control. Further, when the control unit 21a is instructed to execute the light emission inspection, the control unit 21a has a set of offset values (H, V) = (H2, V2) of the runout angle and the runout of the pair of galvanometer mirrors 44a, 44b. An angle is set, and the runout angle is sequentially changed within the angle range W2 of a predetermined angle range (H2 ± ΔH2, V2 ± ΔV2) in one direction and the other direction centered on the offset value (H2, V2). To control. Here, the control unit 21a controls so that the range W1 of the runout angle when switching to the first optical path L1 and the range W2 of the runout angle when switching to the second optical path L2 do not overlap.

The computer 21 also has a function of generating a pattern image or a light emitting image (analyzed image) based on the detection signals input from the photodetectors 34 and 35. That is, the computer 21 indicates the intensity of the reflected light for each two-dimensional position of the semiconductor device D based on the detection signal obtained while scanning the light from the light source 33 on the semiconductor device D under the control of the control unit 21a. Generate a pattern image. Similarly, the computer 21 produces a light emitting image showing the intensity of light emission for each two-dimensional position of the semiconductor device D based on the detection signal obtained while scanning the observation position on the semiconductor device D under the control of the control unit 21a. Generate. Further, the computer 21 generates a superimposed image in which the pattern image and the luminescent image are superimposed as an analysis image, and outputs the generated analysis image to the display unit 22.

According to the inspection system 1 described above, the runout angles of the pair of galvanometer mirrors 44a and 44b so as to switch the optical path optically connected to the semiconductor device D between the first optical path L1 and the second optical path L2. Is controlled. As a result, the measurement of the reflected light of the semiconductor device D using the light source 33, the photodetector 34, and the mirror 40b and the inspection of the light emission of the semiconductor device D using the photodetector 35 attached to the mounting portion 46 are switched. To be made feasible. At this time, the runout angles of the galvano mirrors 44a and 44b when switching to the first optical path L1 and the runout angles of the galvano mirrors 44a and 44b when switching to the second optical path L2 are controlled so as not to overlap. Therefore, as a result of being able to independently set the optical system of each measurement system to the optimum state, it is possible to improve the spatial accuracy of the optical path in each inspection system. As a result, the semiconductor device D can be inspected with high accuracy.

Further, in the optical device 31A, by attaching the photodetector 35 to the attachment portion 46, it is possible to detect the light emission of the semiconductor device D via the second optical path L2. In this case, when the optical path optically connected to the semiconductor device D is switched to the second optical path L2, the photodetector 35 can be used to measure the light emission from the semiconductor device. Further, by providing the mounting portion 46, the photodetector 35 can be easily replaced with another optical element, and the optimum inspection can be performed.
[Second Embodiment]

FIG. 5 shows the configuration of the optical device 31B according to the second embodiment. The optical device 31B differs from the first embodiment in that it includes a light source 133 in addition to the light source 33 and the photodetectors 34 and 35.

That is, the optical device 31B further includes a light source (third light source) 133 that irradiates a laser beam for marking the faulty part. The light source 133 is a collimator lens 39d and an optical fiber 38d held by a mounting portion (third mounting portion) 146 provided at a position on a housing 32 that can be optically connected to a pair of galvanometer mirrors 44a and 44b. Is optically connected to the internal optical system 36 via. Specifically, the mounting portion 146 forms a tubular member, and is used to mount an optical element such as a collimator lens inside the housing 32 on an extension line connecting the pair of galvano mirrors 44a and 44b and the dichroic mirror 140b. It is a part. Further, the optical device 31B includes a dichroic mirror 140b as a light guide element instead of the mirror 40b, and the light source 133 is optically connected to the dichroic mirror 140b. The dichroic mirror 140b reflects the light from the light source 33 toward the pair of galvano mirrors 44a and 44b, and reflects the reflected light of the semiconductor device D incident from the pair of galvano mirrors 44a and 44b toward the light detector 34. At the same time, the laser light from the light source 133 is transmitted toward the pair of galvanometer mirrors 44a and 44b.

In the inspection system 1 including the optical device 31B, when the marking process is executed, the control unit 21a of the computer 21 sets an optical path optically connected to the semiconductor device D with the external optical system 37. The runout angles of the pair of galvano mirrors 44a and 44b are controlled so as to switch to the optical path L3 including the galvano mirrors 44a and 44b and the internal optical system 36 via the dichroic mirror 140b. Specifically, the control unit 21a switches to the optical path L3 when the user instructs the execution of the marking process via the input unit 23. At this time, the position of the failure location is specified in advance by the user based on the analysis image displayed on the display unit 22, and the information indicating the failure location is input using the input unit 23. The control unit 21a controls the runout angles of the pair of galvanometer mirrors 44a and 44b so as to have a runout angle corresponding to the failure point based on the information indicating the failure point input from the input unit 23. As a result, laser marking is performed at a position corresponding to the failure location of the semiconductor device D.

Also in the second embodiment as described above, the optical system of each measurement system can be independently set to the optimum state, and as a result, the spatial accuracy of the optical path in each inspection system can be improved. As a result, the semiconductor device D can be inspected with high accuracy.

As a modification of the second embodiment, the light source 133 outputs a laser beam having a wavelength of 1064 nm, which has a lower energy than the silicon bandgap, and a laser beam having a wavelength of 1300 nm, which has a higher energy than the silicon bandgap. The failure analysis of the semiconductor device D may be performed by using the laser light source. By using such a laser light source, failure analysis can be performed from the current or voltage output from the semiconductor device D.
[Third Embodiment]

FIG. 6 shows the configuration of the optical device 31C according to the third embodiment. The optical device 31C differs from the second embodiment in that the light source is optically connected to the optical path between the two mirrors 40a and 40b.

Specifically, the optical device 31C has a dichroic mirror 240 arranged between the mirror 40a and the PBS 41 as an internal optical system 36, and the light source 133 includes a dichroic mirror 240, a collimator lens 39a, and an optical fiber 38d. It is optically connected via.

In such a configuration, the light output from the light source 133 can irradiate the semiconductor device D via the first optical path L1. The marking process may be performed by using various types of light sources as the light source 133. Further, by combining the light source 33 with a light source having a wavelength different from that of the light source 33, the semiconductor device D may be irradiated with light having various wavelengths, and the reflected light may be observed or a failure analysis may be performed.
[Fourth Embodiment]

FIG. 7 shows the configuration of the optical device 31D according to the fourth embodiment. The optical device 31D has a configuration in which an optical path optically connectable to the semiconductor device D can be switched to a third optical path L4 in addition to the first optical path L1 and the second optical path L2.

Specifically, the optical device 31D further includes a photodetector 335 for inspecting the light emission of the semiconductor device D. The photodetector 335 includes a collimator lens 39e and light held by a mounting portion (second mounting portion) 346 provided at a position on a housing 32 that can be optically connected to a pair of galvanometer mirrors 44a and 44b. It is optically connected to the internal optical system 36 via the fiber 38e. Specifically, the mounting portion 346 forms a tubular member, and is a portion for mounting an optical element such as a collimator lens inside the housing 32.

In the inspection system 1 including the optical device 31D, when the light emission inspection process using the light detector 335 is executed, the control unit 21a of the computer 21 establishes an optical path optically connected to the semiconductor device D. , The pair of galvano mirrors 44a, 44b so as to switch to the third optical path L4 including the external optical system 37 and the pair of galvano mirrors 44a, 44b and the internal optical system 36 via the collimator lens 39e in the mounting portion 346. Control the runout angle. Specifically, the control unit 21a switches to the optical path L4 when the user instructs the execution of the light emission inspection process via the input unit 23.

FIG. 8 shows an example of a change range of the runout angle of the pair of galvanometer mirrors 44a and 44b controlled by the control unit 21a of the computer 21. When the control unit 21a of the present embodiment is instructed to execute the light emission inspection using the photodetector 335, the control unit 21a is paired with the preset offset value (H, V) = (H4, V4) of the runout angle. Within the angle range W4 of the predetermined angle range (H4 ± ΔH4, V4 ± ΔV4) in one direction and the other direction centered on the offset value (H4, V4) of the galvanometer mirrors 44a and 44b. , Control to change the runout angle sequentially. Here, the control unit 21a has switched to the swing angle range W1 when switching to the first optical path L1, the swing angle range W2 when switching to the second optical path L2, and the third optical path L4. It is controlled so that it does not overlap with the swing angle range W4.

As a result of being able to independently set the optical system of each measurement system to the optimum state by the fourth embodiment as described above, the spatial accuracy of the optical path in each inspection system can be improved. As a result, the semiconductor device D can be inspected with high accuracy. In the present embodiment, as shown in FIG. 9, the mounting portion 346 is provided with a light source 333 for illuminating, marking, heating, or generating a photoelectromotive force of the semiconductor device D instead of the photodetector 335. It may be attached.

The present invention is not limited to the above-described embodiment.

For example, in the first embodiment, the photodetector 35 is optically connected to the galvano mirrors 44a and 44b via the collimator lens and the optical fiber, but the optical device 31F according to the modification shown in FIG. In addition, the photodetector 35 may be optically directly connected to the galvano mirrors 44a and 44b.

Further, as in the optical device 31G according to the modification shown in FIG. 11, a light source 433 that generates light to irradiate the semiconductor device D may be attached to the attachment portion 46 instead of the photodetector 35. At this time, the light source 433 may be optically connected to the galvano mirrors 44a and 44b via the collimator lens and the optical fiber, or may be optically directly connected to the galvano mirrors 44a and 44b.

Further, as in the optical device 31H according to the modification shown in FIG. 12, an optical path dividing element 50 in which the light source 233 and the photodetector 334 are optically connected may be attached to the attachment portion 46. The light source 233 is, for example, an incoherent light source such as an LED (Light Emitting Diode) or an SLD (Super Luminescent Diode) light source, or a coherent light source such as a laser. The photodetector 334 is a light receiving element such as a photomultiplier tube, PD (Photodiode), or APD (Avalanche Photodiode). The optical path dividing element 50 is, for example, an optical circulator. In this case, when the semiconductor device D is irradiated with light from the light source 233 via the second optical path L5, the light reflected and returned via the second optical path L5 is detected by the photodetector 334. It can be detected by guiding the light to. In this case, the semiconductor device D may be irradiated with light having an arbitrary linearly polarized light by arranging a 1/2 wave plate as the polarizing element 51 on the optical path L5 and rotating it at an arbitrary angle. .. Further, a polarization-retaining optical fiber coupler may be used as the optical path dividing element 50, and a quarter wave plate may be arranged on the optical path L5 as the polarizing element 51. In this case, the light output from the light source 233 can be irradiated to the semiconductor device D as circular polarization, and the light reflected by the semiconductor device D and returned can be guided to the photodetector 334 for detection.

Further, the configuration may be such that the optical device 31I according to the modification shown in FIG. That is, unlike the above-described embodiment, the present modification does not have the light detector 34 optically connected to the light guide element 40b, and has a plurality of light sources (light source 33 and light source 33 and) as in the third embodiment. The light source 233 and the light detector 334 may be attached to the attachment portion 46 by using the optical path dividing element 50 provided with the light source 133) and the light source 233 and the light detector 334 are optically connected. In this case, the light reflected from the light source 233 to the semiconductor device D is detected by the light detector 334 to generate a pattern image, or the light source 33 and the light source 133 generate light having different wavelengths from each other. Failure analysis can be performed by irradiating the semiconductor device D via the optical path L6.

1 ... Inspection system (semiconductor inspection device), 21 ... Computer, 21a ... Control unit, 31A to 31G ... Optical device, 32 ... Housing, 33 ... (1st) light source, 34 ... (1st) optical detector , 35 ... (second) optical detector, 38a-38e ... optical fiber, 39a-39e ... collimeter lens, 40b ... light source (mirror), 44a, 44b ... pair of galvanometer mirrors, 46 ... (first) ) Mounting part, 50 ... Optical path dividing element, 133 ... (Third) light source, 140b ... Dichroic mirror, 146 ... (Third) mounting part, 240 ... Dichroic mirror, 333 ... (Second) light source, 346 ... (Second) mounting part, D ... semiconductor device, L1 ... (first) optical path, L2 ... (second) optical path, L4 ... (third) optical path.

Claims (12)

A semiconductor inspection device that inspects semiconductor devices.
A first light source that generates light to irradiate the semiconductor device,
A mirror optically connected to the first light source,
A pair of galvano mirrors provided at positions that can be optically connected to the first light source via the mirror,
A first photodetector that is optically connected to the mirror and detects light from the semiconductor device,
A polarization beam splitter that transmits the light output from the first light source and reflects the light from the semiconductor device through the pair of galvanometers toward the first photodetector.
A first mounting portion for mounting the optical element provided in the pair of galvanometer mirrors and optically connectable position,
A control unit that controls the runout angle of the pair of galvano mirrors,
With
Wherein the control unit, the semiconductor device and an optical path optically connected, first optical path passing through the pair of galvanometer mirrors and the mirror, second passing through the pair of galvanometer mirrors and said first mounting portion The runout angle is controlled so as to switch between the optical path and the optical path of
The runout angle is controlled so that the runout angle when switching to the first optical path and the runout angle when switching to the second optical path do not overlap.
Semiconductor inspection equipment. A second light source for generating light to irradiate the semiconductor device is further provided.
By attaching the second light source to the first mounting portion, it is possible to irradiate the light via the second optical path.
The semiconductor inspection apparatus according to claim 1. The second light source is attached to the first attachment portion via a collimator lens and an optical fiber.
The semiconductor inspection apparatus according to claim 2. The second light source is a light source that irradiates a laser beam for marking a faulty part.
The semiconductor inspection apparatus according to claim 2 or 3. The second light source is a laser light source that outputs a laser beam having a wavelength of 1300 nm.
The semiconductor inspection apparatus according to claim 2 or 3. A second photodetector for detecting light from the semiconductor device is further provided.
By attaching the second photodetector to the first mounting portion, it is possible to detect the light via the second optical path.
The semiconductor inspection apparatus according to claim 1 or 2. The second photodetector is attached to the first attachment portion via a collimator lens and an optical fiber.
The semiconductor inspection apparatus according to claim 6. The second photodetector is a superconducting single photon detector.
The semiconductor inspection apparatus according to claim 6 or 7. It further has a second mounting portion for mounting an optical element provided at a position where it can be optically connected to the pair of galvano mirrors.
The control unit controls the runout angle so as to switch between the first optical path, the second optical path, and the third optical path passing through the pair of galvanometer mirrors and the second mounting portion. ,And,
The runout angle when switching to the first optical path, the runout angle when switching to the second optical path, and the runout angle when switching to the third optical path do not overlap. Control the runout angle,
The semiconductor inspection apparatus according to any one of claims 1 to 8. Further comprising a third light source optically connected to the mirror.
The semiconductor inspection apparatus according to any one of claims 1 to 9. The mirror is a dichroic mirror.
It further has a third mounting portion for mounting the optical element on an extension line connecting the pair of galvano mirrors and the dichroic mirror.
The semiconductor inspection apparatus according to any one of claims 1 to 10. The first photodetector is a PD (Photodiode) or APD (Avalanche Photodiode).
The semiconductor inspection apparatus according to any one of claims 1 to 11.

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