JP2019007985A5 - - Google Patents

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JP2019007985A5
JP2019007985A5 JP2018191801A JP2018191801A JP2019007985A5 JP 2019007985 A5 JP2019007985 A5 JP 2019007985A5 JP 2018191801 A JP2018191801 A JP 2018191801A JP 2018191801 A JP2018191801 A JP 2018191801A JP 2019007985 A5 JP2019007985 A5 JP 2019007985A5
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Prior art keywords
optical path
light source
semiconductor inspection
deflection angle
pair
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JP2018191801A
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Japanese (ja)
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JP6909195B2 (en
JP2019007985A (en
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Priority claimed from JP2017109918A external-priority patent/JP6419893B1/en
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Priority to JP2018191801A priority Critical patent/JP6909195B2/en
Priority claimed from JP2018191801A external-priority patent/JP6909195B2/en
Publication of JP2019007985A publication Critical patent/JP2019007985A/en
Publication of JP2019007985A5 publication Critical patent/JP2019007985A5/ja
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Claims (12)

半導体デバイスを検査する半導体検査装置であって、
前記半導体デバイスに照射する光を発生させる第1の光源と、
前記第1の光源と光学的に接続されたミラーと、
前記第1の光源と前記ミラーを介して光学的に接続可能な位置に設けられた一対のガルバノミラーと、
前記ミラーと光学的に接続され、前記半導体デバイスからの光を検出する第1の光検出器と、
前記第1の光源から出力された光を透過し、前記半導体デバイスからの前記一対のガルバノミラーを介した光を前記第1の光検出器に向けて反射する偏光ビームスプリッタと、
前記一対のガルバノミラーと光学的に接続可能な位置に設けられた光学素子を取り付けるための第1の取付部
前記一対のガルバノミラーの振れ角を制御する制御部と、
を備え、
前記制御部は、前記半導体デバイスと光学的に接続される光路を、前記一対のガルバノミラー及び前記ミラーを通る第1の光路と、前記一対のガルバノミラー及び前記第1の取付部を通る第2の光路との間で切り替えるように前記振れ角を制御し、かつ、
前記第1の光路に切り替えた際の前記振れ角と、前記第2の光路に切り替えた際の前記振れ角とが重複しないように、前記振れ角を制御する、
半導体検査装置。
A semiconductor inspection apparatus for inspecting a semiconductor device,
A first light source for generating light for illuminating the semiconductor device;
A mirror optically connected to the first light source,
A pair of galvano mirrors provided at positions that can be optically connected to the first light source via the mirrors;
A first photodetector optically connected to the mirror for detecting light from the semiconductor device;
A polarization beam splitter that transmits the light output from the first light source and reflects the light from the semiconductor device via the pair of galvanomirrors toward the first photodetector;
A first mounting portion for mounting the optical element provided in the pair of galvanometer mirrors and optically connectable position,
A control unit for controlling the deflection angle of the pair of galvano mirrors,
Equipped with
The control unit includes an optical path optically connected to the semiconductor device, a first optical path passing through the pair of galvano mirrors and the mirror, and a second optical path passing through the pair of galvano mirrors and the first mounting portion. The deflection angle is controlled so as to switch between the optical path of
The deflection angle is controlled so that the deflection angle when switching to the first optical path does not overlap with the deflection angle when switching to the second optical path,
Semiconductor inspection equipment.
前記半導体デバイスに照射する光を発生させる第2の光源をさらに備え、
前記第2の光源は、前記第1の取付部に取り付けられることにより、前記第2の光路を経由して前記光を照射可能とされている、
請求項記載の半導体検査装置。
Further comprising a second light source for generating light for illuminating the semiconductor device,
The second light source is attached to the first attachment portion so that the light can be emitted through the second optical path.
The semiconductor inspection apparatus according to claim 1 .
前記第2の光源は、第1の取付部にコリメータレンズ及び光ファイバを介して取り付けられている、
請求項記載の半導体検査装置。
The second light source is attached to the first attachment portion via a collimator lens and an optical fiber.
The semiconductor inspection device according to claim 2 .
前記第2の光源は、故障個所を示すマーキングを行うためのレーザ光を照射する光源である、 The second light source is a light source for irradiating a laser beam for marking a defective portion,
請求項2又は3に記載の半導体検査装置。The semiconductor inspection device according to claim 2 or 3.
前記第2の光源は、1300nmの波長を有するレーザ光を出力するレーザ光源である、 The second light source is a laser light source that outputs laser light having a wavelength of 1300 nm,
請求項2又は3に記載の半導体検査装置。The semiconductor inspection device according to claim 2 or 3.
前記半導体デバイスからの光を検出する第2の光検出器をさらに備え、 Further comprising a second photodetector for detecting light from the semiconductor device,
前記第2の光検出器は、前記第1の取付部に取り付けられることにより、前記第2の光路を経由して前記光を検出可能とされている、 The second photodetector is attached to the first attachment portion so that the light can be detected via the second optical path.
請求項1又は2に記載の半導体検査装置。The semiconductor inspection device according to claim 1.
前記第2の光検出器は、第1の取付部にコリメータレンズ及び光ファイバを介して取り付けられている、 The second photodetector is attached to the first attachment portion via a collimator lens and an optical fiber.
請求項6記載の半導体検査装置。The semiconductor inspection device according to claim 6.
前記第2の光検出器は、超電導単一光子検出器である、 The second photodetector is a superconducting single photon detector,
請求項6又は7記載の半導体検査装置。The semiconductor inspection apparatus according to claim 6 or 7.
前記一対のガルバノミラーと光学的に接続可能な位置に設けられた光学素子を取り付けるための第2の取付部をさらに有し、
前記制御部は、前記第1の光路と、前記第2の光路と、前記一対のガルバノミラー及び前記第2の取付部を通る第3の光路との間で切り替えるように前記振れ角を制御し、かつ、
前記第1の光路に切り替えた際の前記振れ角と、前記第2の光路に切り替えた際の前記振れ角と、前記第3の光路に切り替えた際の前記振れ角とが重複しないように、前記振れ角を制御する、
請求項1〜のいずれか1項に記載の半導体検査装置。
Further comprising a second mounting portion for mounting an optical element provided at a position optically connectable to the pair of galvano mirrors,
The controller controls the deflection angle so as to switch between the first optical path, the second optical path, and a third optical path that passes through the pair of galvanometer mirrors and the second mounting portion. ,And,
In order not to overlap the deflection angle when switching to the first optical path, the deflection angle when switching to the second optical path, and the deflection angle when switching to the third optical path, Controlling the deflection angle,
Semiconductor inspection device according to any one of claims 1-8.
前記ミラーと光学的に接続された第3の光源をさらに備える、 Further comprising a third light source optically connected to the mirror,
請求項1〜9のいずれか1項に記載の半導体検査装置。The semiconductor inspection device according to claim 1.
前記ミラーは、ダイクロイックミラーであり、
前記一対のガルバノミラーと前記ダイクロイックミラーとを結ぶ延長線上に光学素子を取り付けるための第3の取付部をさらに有する、
請求項1〜10のいずれか1項に記載の半導体検査装置。
The mirror is a dichroic mirror,
A third mounting portion for mounting an optical element on an extension line connecting the pair of galvano mirrors and the dichroic mirror;
The semiconductor inspection device according to claim 1.
前記第1の光検出器は、PD(Photodiode)又はAPD(Avalanche Photodiode)である、 The first photodetector is a PD (Photodiode) or an APD (Avalanche Photodiode),
請求項1〜11のいずれか1項に記載の半導体検査装置。The semiconductor inspection device according to claim 1.
JP2018191801A 2017-06-02 2018-10-10 Semiconductor inspection equipment Active JP6909195B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018191801A JP6909195B2 (en) 2017-06-02 2018-10-10 Semiconductor inspection equipment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017109918A JP6419893B1 (en) 2017-06-02 2017-06-02 Semiconductor inspection equipment
JP2018191801A JP6909195B2 (en) 2017-06-02 2018-10-10 Semiconductor inspection equipment

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2017109918A Division JP6419893B1 (en) 2017-06-02 2017-06-02 Semiconductor inspection equipment

Publications (3)

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JP2019007985A JP2019007985A (en) 2019-01-17
JP2019007985A5 true JP2019007985A5 (en) 2020-08-06
JP6909195B2 JP6909195B2 (en) 2021-07-28

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Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3798481B2 (en) * 1996-10-16 2006-07-19 株式会社キーエンス Laser marking device
JP3961220B2 (en) * 1998-08-10 2007-08-22 三菱電機株式会社 Printed circuit board inspection equipment
JP5110894B2 (en) * 2007-02-05 2012-12-26 株式会社ジャパンディスプレイウェスト Defect correction apparatus, wiring board manufacturing method, display device manufacturing method
WO2009011441A1 (en) * 2007-07-19 2009-01-22 Nikon Corporation Scanning type confocal microscope
US8836934B1 (en) * 2012-05-15 2014-09-16 The Boeing Company Contamination identification system

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