JP6901019B1 - Manufacturing method of insulated circuit board - Google Patents

Manufacturing method of insulated circuit board Download PDF

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JP6901019B1
JP6901019B1 JP2020053650A JP2020053650A JP6901019B1 JP 6901019 B1 JP6901019 B1 JP 6901019B1 JP 2020053650 A JP2020053650 A JP 2020053650A JP 2020053650 A JP2020053650 A JP 2020053650A JP 6901019 B1 JP6901019 B1 JP 6901019B1
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metal piece
circuit board
layer
resin layer
insulating
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JP2021153157A (en
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慶昭 坂庭
慶昭 坂庭
東洋 大橋
東洋 大橋
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to JP2020053650A priority Critical patent/JP6901019B1/en
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to US17/913,212 priority patent/US20230127557A1/en
Priority to PCT/JP2021/012169 priority patent/WO2021193701A1/en
Priority to KR1020227032687A priority patent/KR20220158100A/en
Priority to EP21774126.3A priority patent/EP4131356A4/en
Priority to CN202180023123.5A priority patent/CN115315802A/en
Priority to TW110110592A priority patent/TW202142061A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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    • H01L21/4882—Assembly of heatsink parts
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/202—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using self-supporting metal foil pattern
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H05K7/205—Heat-dissipating body thermally connected to heat generating element via thermal paths through printed circuit board [PCB]
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0162—Silicon containing polymer, e.g. silicone
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0278—Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/06—Lamination
    • H05K2203/068—Features of the lamination press or of the lamination process, e.g. using special separator sheets
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components

Abstract

【課題】樹脂材の上に金属片を回路パターン状に配置した場合であっても、樹脂材の全体を均一に加圧することができ、絶縁樹脂層と金属片とを確実に接合させることが可能な絶縁回路基板の製造方法を提供する。【解決手段】絶縁樹脂層となる樹脂材の上に金属片を回路パターン状に配置する金属片配置工程と、前記樹脂材と前記金属片とを少なくとも積層方向に加圧するとともに加熱することにより、前記絶縁樹脂層と前記金属片とを接合する接合工程と、を有し、前記接合工程では、前記金属片と前記樹脂材とを積層方向に加圧する治具が、前記金属片側に配置されたクッション材と、前記クッション材の周縁部に対向する位置に配置されたガイド壁部と、を備えており、加圧時に前記クッション材の周縁部と前記ガイド壁部とを接触させる。【選択図】なしPROBLEM TO BE SOLVED: To uniformly pressurize the entire resin material even when the metal pieces are arranged in a circuit pattern on the resin material, and to reliably bond the insulating resin layer and the metal pieces. Provided is a possible method for manufacturing an insulated circuit board. SOLUTION: A metal piece arranging step of arranging metal pieces in a circuit pattern on a resin material to be an insulating resin layer, and pressurizing and heating the resin material and the metal pieces at least in a stacking direction. It has a joining step of joining the insulating resin layer and the metal piece, and in the joining step, a jig for pressurizing the metal piece and the resin material in the stacking direction is arranged on the metal piece side. A cushion material and a guide wall portion arranged at a position facing the peripheral edge portion of the cushion material are provided, and the peripheral edge portion of the cushion material and the guide wall portion are brought into contact with each other at the time of pressurization. [Selection diagram] None

Description

この発明は、絶縁樹脂層と、この絶縁樹脂層の一方の面に回路パターン状に配設された金属片からなる回路層と、を備えた絶縁回路基板の製造方法に関するものである。 The present invention relates to a method for manufacturing an insulated circuit board including an insulating resin layer and a circuit layer made of metal pieces arranged in a circuit pattern on one surface of the insulating resin layer.

パワーモジュール、ＬＥＤモジュール及び熱電モジュールにおいては、絶縁層の一方の面に導電材料からなる回路層を形成した絶縁回路基板に、パワー半導体素子、ＬＥＤ素子及び熱電素子が接合された構造とされている。
上述の絶縁回路基板として、例えば特許文献１に記載された金属ベース回路基板が提案されている。 The power module, LED module, and thermoelectric module have a structure in which a power semiconductor element, an LED element, and a thermoelectric element are bonded to an insulating circuit substrate in which a circuit layer made of a conductive material is formed on one surface of the insulating layer. ..
As the above-mentioned insulating circuit board, for example, the metal-based circuit board described in Patent Document 1 has been proposed.

特許文献１に記載された金属ベース回路基板においては、金属基板上に絶縁樹脂層が形成され、この絶縁樹脂層上に回路パターンを有する回路層が形成されている。ここで、絶縁樹脂層は、熱硬化型樹脂であるエポキシ樹脂で構成されており、回路層は、銅箔で構成されている。 In the metal-based circuit board described in Patent Document 1, an insulating resin layer is formed on the metal substrate, and a circuit layer having a circuit pattern is formed on the insulating resin layer. Here, the insulating resin layer is made of an epoxy resin which is a thermosetting resin, and the circuit layer is made of a copper foil.

この金属ベース回路基板においては、回路層上に半導体素子が接合され、金属基板の絶縁樹脂層とは反対側の面にヒートシンクが配設されており、半導体素子で発生した熱をヒートシンク側に伝達して放熱する構造とされている。
そして、特許文献１に記載された金属ベース回路基板においては、絶縁樹脂層の上に配設された銅箔をエッチング処理することによって回路パターンを形成している。 In this metal-based circuit board, a semiconductor element is bonded on the circuit layer, and a heat sink is arranged on the surface of the metal substrate opposite to the insulating resin layer, and heat generated by the semiconductor element is transferred to the heat sink side. It has a structure that dissipates heat.
Then, in the metal-based circuit board described in Patent Document 1, a circuit pattern is formed by etching a copper foil arranged on an insulating resin layer.

最近では、回路層に搭載された半導体素子に通電される電流が大きくなる傾向にあり、これに伴って半導体素子からの発熱量も大きくなっている。そこで、導電性及び熱伝導性を確保するために、回路層の厚肉化が求められている。 ここで、回路層を厚肉化した場合には、特許文献１に記載されたようにエッチング処理によって回路パターンを形成すると、回路層の端面にダレが生じ、回路層の端面に電界が集中し、絶縁性が低下するおそれがあった。 Recently, the current applied to the semiconductor element mounted on the circuit layer tends to increase, and the amount of heat generated from the semiconductor element also increases accordingly. Therefore, in order to secure conductivity and thermal conductivity, it is required to thicken the circuit layer. Here, when the circuit layer is thickened, when the circuit pattern is formed by the etching process as described in Patent Document 1, the end face of the circuit layer is sagging and the electric field is concentrated on the end face of the circuit layer. , There was a risk that the insulation would be reduced.

そこで、特許文献２には、エッチング処理を実施することなく回路層を形成する方法として、予め所望の形状を付与した打ち抜き金属片を、セラミックス基板に接合する技術が提案されている。この方法によれば、回路層を厚肉化しても、金属片の端面にダレは生じず、回路パターン間の絶縁性を確保することができ、回路パターン間の距離を小さくすることも可能である。
この特許文献２においては、絶縁層としてセラミックス基板を用いており、このセラミックス基板に対して金属片を積層方向に加圧することで金属片とセラミックス基板とを接合している。 Therefore, Patent Document 2 proposes a technique of joining a punched metal piece having a desired shape in advance to a ceramic substrate as a method of forming a circuit layer without performing an etching process. According to this method, even if the circuit layer is thickened, the end face of the metal piece does not sag, the insulation between the circuit patterns can be ensured, and the distance between the circuit patterns can be reduced. is there.
In Patent Document 2, a ceramic substrate is used as an insulating layer, and the metal piece is bonded to the ceramic substrate by pressurizing the metal piece in the stacking direction.

特開２０１５−２０７６６６号公報Japanese Unexamined Patent Publication No. 2015-207666 特開平０９−１３５０５７号公報Japanese Unexamined Patent Publication No. 09-13505

ところで、特許文献２において、絶縁層を熱硬化型樹脂からなる絶縁樹脂層で構成した場合には、硬化前の樹脂組成物の上に金属片を配置し、金属片を積層方向に加圧するとともに加熱することにより、樹脂組成物を硬化させて絶縁樹脂層を構成するとともに絶縁樹脂層と金属片とが接合されることになる。ここで、回路層を厚肉化した場合、金属片が配置された領域においては、樹脂組成物が十分に加圧されることになるが、金属片が配置されていない領域においては、樹脂組成物の加圧が不十分となり、絶縁樹脂層の内部にボイドが多く生成し、絶縁樹脂層の絶縁性が確保できないおそれがあった。このため、絶縁樹脂層を用いた絶縁回路基板においては、厚肉の回路層を精度良く形成することは困難であった。 By the way, in Patent Document 2, when the insulating layer is composed of an insulating resin layer made of a thermosetting resin, a metal piece is arranged on the resin composition before curing, and the metal piece is pressed in the stacking direction. By heating, the resin composition is cured to form an insulating resin layer, and the insulating resin layer and the metal piece are bonded to each other. Here, when the circuit layer is thickened, the resin composition is sufficiently pressurized in the region where the metal pieces are arranged, but in the region where the metal pieces are not arranged, the resin composition is formed. There was a risk that the pressurization of the object would be insufficient and many voids would be generated inside the insulating resin layer, making it impossible to secure the insulating property of the insulating resin layer. Therefore, in an insulating circuit board using an insulating resin layer, it is difficult to form a thick circuit layer with high accuracy.

そこで、熱硬化樹脂からなる樹脂組成物の一面に、金属片を回路パターン状に配置し、金属片側にゴム状弾性体を配置して、樹脂組成物と金属片とを積層方向に加圧および加熱し、前記樹脂組成物を硬化させて前記絶縁樹脂層を形成するとともに前記絶縁樹脂層と前記金属片とを接合することが考えられる。
しかしながら、金属片側にゴム状弾性体を配置して樹脂組成物と金属片とを積層方向に加圧した場合には、ゴム状弾性体で金属片を押圧した際に、ゴム状弾性体の周縁部が加圧によって外側に広がるように変形してしまい、金属片を外側に広がる方向にずらしてしまったり、ゴム状弾性体の周縁部に相当する領域を十分に加圧することができず、金属片の接合不良や絶縁樹脂層の割れ等が発生したりするおそれがあった。 Therefore, the metal pieces are arranged in a circuit pattern on one surface of the resin composition made of thermosetting resin, and the rubber-like elastic body is arranged on the side of the metal pieces to pressurize the resin composition and the metal pieces in the stacking direction. It is conceivable to heat and cure the resin composition to form the insulating resin layer and to join the insulating resin layer and the metal piece.
However, when the rubber-like elastic body is arranged on the metal piece side and the resin composition and the metal piece are pressed in the stacking direction, when the metal piece is pressed by the rubber-like elastic body, the peripheral edge of the rubber-like elastic body is pressed. The part is deformed so as to spread outward due to pressurization, and the metal piece is shifted in the direction of spreading outward, or the region corresponding to the peripheral edge of the rubber-like elastic body cannot be sufficiently pressurized, and the metal There was a risk of poor bonding of the pieces and cracking of the insulating resin layer.

この発明は、前述した事情に鑑みてなされたものであって、樹脂材の上に金属片を回路パターン状に配置した場合であっても、樹脂材の全体を均一に加圧することができ、絶縁樹脂層と金属片とを確実に接合させることが可能な絶縁回路基板の製造方法を提供することを目的とする。 The present invention has been made in view of the above-mentioned circumstances, and even when the metal pieces are arranged in a circuit pattern on the resin material, the entire resin material can be uniformly pressurized. An object of the present invention is to provide a method for manufacturing an insulated circuit board capable of reliably joining an insulating resin layer and a metal piece.

上述の課題を解決するために、本発明の絶縁回路基板の製造方法は、絶縁樹脂層と、前記絶縁樹脂層の一方の面に回路パターン状に配設された金属片からなる回路層と、を備えた絶縁回路基板の製造方法であって、前記絶縁樹脂層となる樹脂材の上に前記金属片を回路パターン状に配置する金属片配置工程と、前記樹脂材と前記金属片とを少なくとも積層方向に加圧するとともに加熱することにより、前記絶縁樹脂層と前記金属片とを接合する接合工程と、を有し、前記接合工程では、前記金属片と前記樹脂材とを積層方向に加圧する加圧治具が、前記金属片側に配置されたクッション材と、前記クッション材の周縁部に対向する位置に配置されたガイド壁部と、を備えており、加圧時に前記クッション材の周縁部と前記ガイド壁部とを接触させることを特徴としている。 In order to solve the above-mentioned problems, the method for manufacturing an insulated circuit board of the present invention includes an insulating resin layer, a circuit layer composed of metal pieces arranged in a circuit pattern on one surface of the insulating resin layer, and the like. The method for manufacturing an insulated circuit board comprising the above, wherein the metal piece is arranged in a circuit pattern on the resin material to be the insulating resin layer, and at least the resin material and the metal piece are arranged. It has a joining step of joining the insulating resin layer and the metal piece by pressurizing and heating in the laminating direction, and in the joining step, the metal piece and the resin material are pressed in the laminating direction. The pressurizing jig includes a cushion material arranged on one side of the metal and a guide wall portion arranged at a position facing the peripheral edge portion of the cushion material, and the peripheral edge portion of the cushion material during pressurization. It is characterized in that it is brought into contact with the guide wall portion.

この構成の絶縁回路基板の製造方法によれば、前記接合工程では、前記金属片と前記樹脂材とを積層方向に加圧する加圧治具が、前記金属片側に配置されたクッション材と、前記クッション材の周縁部に対向する位置に配置されたガイド壁部と、を備えており、加圧時に前記クッション材の周縁部と前記ガイド壁部とを接触させる構成とされているので、前記接合工程で、ガイド壁部によって前記クッション材の周縁部が外方に突出することが抑制されることになり、樹脂材を、金属片が配置された領域、金属片が配置されていない領域、および、クッション材の周縁部に相当する領域の全てで、十分に加圧することができ、金属片と絶縁樹脂層とを強固に接合することが可能となる。
なお、前記クッション材の周縁部と前記ガイド壁部との接触は、少なくとも加圧時に接触していればよく、加圧前から接触していてもよい。また、前記クッション材の周縁部と前記ガイド壁部とを接触させる際は、前記クッション材の周縁部の下面側が前記ガイド壁部と接触していてもよく、前記クッション材の周縁部の側面側が前記ガイド壁部と接触してもよい。 According to the method for manufacturing an insulated circuit substrate having this configuration, in the joining step, a pressurizing jig that pressurizes the metal piece and the resin material in the stacking direction is provided on the side of the metal piece and the cushion material. A guide wall portion arranged at a position facing the peripheral edge portion of the cushion material is provided, and the peripheral edge portion of the cushion material and the guide wall portion are brought into contact with each other during pressurization. In the process, the guide wall portion prevents the peripheral edge portion of the cushion material from protruding outward, and the resin material is provided in a region where a metal piece is arranged, a region where a metal piece is not arranged, and a region where the metal piece is not arranged. It is possible to sufficiently pressurize the entire region corresponding to the peripheral edge of the cushion material, and it is possible to firmly bond the metal piece and the insulating resin layer.
The contact between the peripheral edge portion of the cushion material and the guide wall portion may be at least in contact during pressurization, and may be in contact before pressurization. Further, when the peripheral edge portion of the cushion material and the guide wall portion are brought into contact with each other, the lower surface side of the peripheral edge portion of the cushion material may be in contact with the guide wall portion, and the side surface side of the peripheral edge portion of the cushion material may be in contact with the guide wall portion. It may come into contact with the guide wall portion.

ここで、本発明の絶縁回路基板の製造方法においては、前記ガイド壁部の硬さが前記クッション材の硬さよりも大きいことが好ましい。
この場合、前記ガイド壁部の硬さが前記クッション材の硬さよりも大きいので、加圧時における前記クッション材の周縁部の変形を確実に抑制することが可能となる。 Here, in the method for manufacturing an insulated circuit board of the present invention, it is preferable that the hardness of the guide wall portion is larger than the hardness of the cushion material.
In this case, since the hardness of the guide wall portion is larger than the hardness of the cushion material, it is possible to reliably suppress the deformation of the peripheral portion of the cushion material during pressurization.

また、本発明の絶縁回路基板の製造方法においては、前記ガイド壁部が、前記加圧治具の前記樹脂材側に配されていることが好ましい。
この場合、記ガイド壁部が前記加圧治具の前記樹脂材側に配されているので、加圧時に金属片側に配設されたクッション材の周縁部にガイド壁部を確実に接触させることができ、加圧時における前記クッション材の周縁部の変形を確実に抑制することが可能となる。 Further, in the method for manufacturing an insulated circuit board of the present invention, it is preferable that the guide wall portion is arranged on the resin material side of the pressurizing jig.
In this case, since the guide wall portion is arranged on the resin material side of the pressurizing jig, the guide wall portion is surely brought into contact with the peripheral edge portion of the cushion material arranged on one side of the metal during pressurization. This makes it possible to reliably suppress deformation of the peripheral portion of the cushion material during pressurization.

さらに、本発明の絶縁回路基板の製造方法においては、前記絶縁回路基板が、前記絶縁樹脂層の他方の面に配置された放熱層を更に含み、前記接合工程において、前記金属片と前記絶縁樹脂層、および、前記放熱層と前記絶縁樹脂層を同時に接合する構成としてもよい。
この場合、絶縁樹脂層の他方の面側に放熱層を回路層と同時に形成することができ、放熱性に優れた絶縁回路基板を効率良く製造することができる。 Further, in the method for manufacturing an insulating circuit board of the present invention, the insulating circuit board further includes a heat radiating layer arranged on the other surface of the insulating resin layer, and in the joining step, the metal piece and the insulating resin are further included. The layer and the heat radiating layer and the insulating resin layer may be joined at the same time.
In this case, a heat radiating layer can be formed at the same time as the circuit layer on the other surface side of the insulating resin layer, and an insulated circuit board having excellent heat radiating properties can be efficiently manufactured.

また、本発明の絶縁回路基板の製造方法においては、前記樹脂材がエポキシ樹脂であり、前記接合工程において、前記樹脂材を硬化させて前記絶縁樹脂層を形成する構成としてもよい。
この場合、前記接合工程において、エポキシ樹脂からなる樹脂材を、金属片が配置された領域、金属片が配置されていない領域、および、クッション材の周縁部に相当する領域の全てで、十分に加圧することができ、均一に硬化させることが可能となり、絶縁性に優れた絶縁樹脂層を形成することが可能となる。 Further, in the method for manufacturing an insulating circuit board of the present invention, the resin material may be an epoxy resin, and the resin material may be cured to form the insulating resin layer in the joining step.
In this case, in the joining step, the resin material made of epoxy resin is sufficiently applied in all of the region where the metal piece is arranged, the region where the metal piece is not arranged, and the region corresponding to the peripheral edge portion of the cushion material. It can be pressurized, can be cured uniformly, and can form an insulating resin layer having excellent insulating properties.

また、本発明の絶縁回路基板の製造方法においては、前記樹脂材がポリイミド樹脂であってもよい。
この場合、前記接合工程において、ポリイミド樹脂からなる樹脂材を、金属片が配置された領域、金属片が配置されていない領域、および、クッション材の周縁部に相当する領域の全てで、十分に加圧することができ、絶縁樹脂層と前記金属片とを確実に接合することができる。 Further, in the method for manufacturing an insulated circuit board of the present invention, the resin material may be a polyimide resin.
In this case, in the joining step, the resin material made of polyimide resin is sufficiently applied in all of the region where the metal piece is arranged, the region where the metal piece is not arranged, and the region corresponding to the peripheral edge portion of the cushion material. It can be pressurized, and the insulating resin layer and the metal piece can be reliably joined.

さらに、本発明の絶縁回路基板の製造方法においては、前記クッション材がシリコーンゴムで構成されていることが好ましい。
この場合、クッション材が適切な硬さを有しており、金属片の形状に応じて変形するとともに、金属片が配置された領域、金属片が配置されていない領域、および、クッション材の周縁部に相当する領域を均一に押圧することができる。 Further, in the method for manufacturing an insulated circuit board of the present invention, it is preferable that the cushion material is made of silicone rubber.
In this case, the cushioning material has an appropriate hardness and is deformed according to the shape of the metal piece, and the area where the metal piece is arranged, the area where the metal piece is not arranged, and the peripheral edge of the cushioning material. The area corresponding to the portion can be pressed uniformly.

本発明によれば、樹脂材の上に金属片を回路パターン状に配置した場合であっても、樹脂材の全体を均一に加圧することができ、絶縁樹脂層と金属片とを確実に接合させることが可能な絶縁回路基板の製造方法を提供することができる。 According to the present invention, even when the metal pieces are arranged in a circuit pattern on the resin material, the entire resin material can be uniformly pressurized, and the insulating resin layer and the metal pieces are reliably joined. It is possible to provide a method for manufacturing an insulated circuit board that can be used.

本発明の実施形態である絶縁回路基板の製造方法によって製造された絶縁回路基板を用いたパワーモジュールの断面説明図である。It is sectional drawing of the power module using the insulation circuit board manufactured by the manufacturing method of the insulation circuit board which is an embodiment of this invention. 本発明の実施形態である絶縁回路基板の製造方法によって製造された絶縁回路基板の説明図である。（ａ）が側面断面図、（ｂ）が上面図である。It is explanatory drawing of the insulation circuit board manufactured by the manufacturing method of the insulation circuit board which is an embodiment of this invention. (A) is a side sectional view, and (b) is a top view. 本発明の実施形態である絶縁回路基板の製造方法の一例を示すフロー図である。It is a flow chart which shows an example of the manufacturing method of the insulation circuit board which is an Embodiment of this invention. 図３における金属片形成工程を示す説明図である。It is explanatory drawing which shows the metal piece forming process in FIG. 本発明の実施形態である絶縁回路基板の製造方法の一例を示す説明図である。It is explanatory drawing which shows an example of the manufacturing method of the insulation circuit board which is an Embodiment of this invention. 本発明の他の実施形態である絶縁回路基板の製造方法で用いられるガイド壁部の説明図である。It is explanatory drawing of the guide wall part used in the manufacturing method of the insulation circuit board which is another Embodiment of this invention.

以下に、本発明の実施形態について、添付した図面を参照して説明する。
図１に、本発明の実施形態における絶縁回路基板１０、および、この絶縁回路基板１０を用いたパワーモジュール１を示す。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 shows an insulated circuit board 10 according to an embodiment of the present invention and a power module 1 using the insulated circuit board 10.

このパワーモジュール１は、絶縁回路基板１０と、この絶縁回路基板１０の一方側（図１において上側）にはんだ層２を介して接合された半導体素子３と、絶縁回路基板１０の他方側（図１において下側）にはんだ層３２を介して接合されたヒートシンク３１と、を備えている。 The power module 1 includes an insulating circuit board 10, a semiconductor element 3 bonded to one side (upper side in FIG. 1) of the insulating circuit board 10 via a solder layer 2, and the other side of the insulating circuit board 10 (FIG. 1). A heat sink 31 joined via a solder layer 32 is provided on the lower side in 1.

はんだ層２、３２は、例えばＳｎ−Ａｇ系、Ｓｎ−Ｃｕ系、Ｓｎ−Ｉｎ系、若しくはＳｎ−Ａｇ−Ｃｕ系のはんだ材（いわゆる鉛フリーはんだ材）とされている。
半導体素子３は、半導体を備えた電子部品であり、必要とされる機能に応じて種々の半導体素子が選択される。 The solder layers 2 and 32 are, for example, Sn-Ag-based, Sn-Cu-based, Sn-In-based, or Sn-Ag-Cu-based solder materials (so-called lead-free solder materials).
The semiconductor element 3 is an electronic component including a semiconductor, and various semiconductor elements are selected according to a required function.

絶縁回路基板１０は、図１及び図２（ａ）に示すように、絶縁樹脂層１１と、絶縁樹脂層１１の一方の面（図１及び図２（ａ）において上面）に形成された回路層１２と、絶縁樹脂層１１の他方の面（図１及び図２（ａ）において下面）に形成された放熱層１３と、を備えている。 As shown in FIGS. 1 and 2A, the insulating circuit board 10 is a circuit formed on one surface of the insulating resin layer 11 and the insulating resin layer 11 (upper surface in FIGS. 1 and 2A). A layer 12 and a heat radiating layer 13 formed on the other surface of the insulating resin layer 11 (lower surface in FIGS. 1 and 2A) are provided.

絶縁樹脂層１１は、回路層１２と放熱層１３との間の電気的接続を防止するものであって、絶縁性を有する樹脂で構成されている。本実施形態では、絶縁樹脂層１１の強度を確保するために、フィラーを含有する熱硬化型樹脂が用いられている。
ここで、フィラーとしては、例えばアルミナ、窒化ホウ素、窒化アルミニウム等を用いることができる。また、熱硬化型樹脂としては、エポキシ樹脂、ポリイミド等を用いることができる。
本実施形態では、絶縁樹脂層１１は、フィラーとしてアルミナを含有するエポキシ樹脂で構成されている。また、絶縁樹脂層１１の厚さは、２０μｍ以上２５０μｍ以下の範囲内とされている。 The insulating resin layer 11 prevents electrical connection between the circuit layer 12 and the heat radiating layer 13, and is made of an insulating resin. In this embodiment, a thermosetting resin containing a filler is used in order to secure the strength of the insulating resin layer 11.
Here, as the filler, for example, alumina, boron nitride, aluminum nitride and the like can be used. Further, as the thermosetting resin, an epoxy resin, a polyimide or the like can be used.
In the present embodiment, the insulating resin layer 11 is made of an epoxy resin containing alumina as a filler. The thickness of the insulating resin layer 11 is within the range of 20 μm or more and 250 μm or less.

回路層１２は、図５に示すように、絶縁樹脂層１１の一方の面（図５において上面）に、導電性に優れた金属からなる金属片２２が接合されることにより形成されている。金属片２２としては、金属板を打ち抜き加工することで形成されたものを用いることができる。本実施形態においては、回路層１２を構成する金属片２２として、無酸素銅の圧延板を打ち抜き加工したものが用いられている。 As shown in FIG. 5, the circuit layer 12 is formed by joining a metal piece 22 made of a metal having excellent conductivity to one surface (upper surface in FIG. 5) of the insulating resin layer 11. As the metal piece 22, a metal piece formed by punching a metal plate can be used. In the present embodiment, as the metal piece 22 constituting the circuit layer 12, a rolled plate of oxygen-free copper is punched.

この回路層１２においては、上述の金属片２２が回路パターン状に配置されることで回路パターンが形成されており、その一方の面（図１において上面）が、半導体素子３が搭載される搭載面とされている。
ここで、回路層１２（金属片２２）の厚さｔは０．５ｍｍ以上とされている。なお、回路層１２（金属片２２）の厚さｔは１．０ｍｍ以上であることが好ましく、１．５ｍｍ以上であることがさらに好ましい。また、回路層１２（金属片２２）の厚さｔの上限は特に制限はないが、現実的には、３．０ｍｍ以下となる。 In the circuit layer 12, a circuit pattern is formed by arranging the above-mentioned metal pieces 22 in a circuit pattern, and one surface (upper surface in FIG. 1) is mounted on which the semiconductor element 3 is mounted. It is said to be a face.
Here, the thickness t of the circuit layer 12 (metal piece 22) is set to 0.5 mm or more. The thickness t of the circuit layer 12 (metal piece 22) is preferably 1.0 mm or more, and more preferably 1.5 mm or more. Further, the upper limit of the thickness t of the circuit layer 12 (metal piece 22) is not particularly limited, but in reality, it is 3.0 mm or less.

また、回路パターン状に配設された金属片２２同士の最近接距離Ｌは、回路パターン状に配設された金属片２２の厚さｔとの比Ｌ／ｔが２．０以下となるように設定されていることが好ましい。なお、Ｌ／ｔは、１．０以下とすることがさらに好ましく、０．５以下とすることがより好ましい。
本実施形態では、具体的には、回路パターン状に配設された金属片２２同士の最近接距離Ｌは、１．０ｍｍ以上１．５ｍｍ以下の範囲内に設定されている。 Further, the closest contact distance L between the metal pieces 22 arranged in the circuit pattern is such that the ratio L / t with the thickness t of the metal pieces 22 arranged in the circuit pattern is 2.0 or less. It is preferable that it is set to. The L / t is more preferably 1.0 or less, and more preferably 0.5 or less.
Specifically, in the present embodiment, the closest contact distance L between the metal pieces 22 arranged in a circuit pattern is set within a range of 1.0 mm or more and 1.5 mm or less.

放熱層１３は、絶縁回路基板１０に搭載された半導体素子３において発生した熱を面方向に拡げることによって、放熱特性を向上させる作用を有する。このため、放熱層１３は、熱伝導性に優れた金属、例えば銅又は銅合金、アルミニウム又はアルミニウム合金で構成されている。本実施形態では、無酸素銅の圧延板で構成されている。また、放熱層１３の厚さは、０．０５ｍｍ以上３ｍｍ以下の範囲内に設定されている。 The heat radiating layer 13 has an effect of improving the heat radiating characteristics by spreading the heat generated in the semiconductor element 3 mounted on the insulating circuit board 10 in the plane direction. Therefore, the heat radiating layer 13 is made of a metal having excellent thermal conductivity, for example, copper or a copper alloy, aluminum or an aluminum alloy. In this embodiment, it is composed of a rolled plate of oxygen-free copper. The thickness of the heat radiating layer 13 is set within the range of 0.05 mm or more and 3 mm or less.

ヒートシンク３１は、絶縁回路基板１０側の熱を放散するためのものである。ヒートシンク３１は、熱伝導性が良好な銅又は銅合金、アルミニウム又はアルミニウム合金等で構成されている。本実施形態においては、無酸素銅からなる放熱板とされている。なお、ヒートシンク３１の厚さは、３ｍｍ以上１０ｍｍ以下の範囲内に設定されている。
ここで、絶縁回路基板１０の放熱層１３とヒートシンク３１とは、はんだ層３２を介して接合されている。 The heat sink 31 is for dissipating heat on the insulating circuit board 10 side. The heat sink 31 is made of copper or a copper alloy, aluminum, an aluminum alloy, or the like having good thermal conductivity. In the present embodiment, the heat sink is made of oxygen-free copper. The thickness of the heat sink 31 is set within the range of 3 mm or more and 10 mm or less.
Here, the heat radiating layer 13 of the insulating circuit board 10 and the heat sink 31 are joined via the solder layer 32.

以下に、本実施形態である絶縁回路基板１０の製造方法について、図３から図５を用いて説明する。 Hereinafter, the method for manufacturing the insulated circuit board 10 according to the present embodiment will be described with reference to FIGS. 3 to 5.

（金属片形成工程Ｓ０１）
まず、回路層１２となる金属片２２を形成する。金属板４２（本実施形態では無酸素銅の圧延板）を打ち抜き加工して、金属片２２を形成する。本実施形態では、図４に示すように、打ち抜き加工機６１の凸型６２及び凹型６３によって金属板４２を挟持して剪断する。これにより、金属片２２を金属板４２から打ち抜く。 (Metal piece forming step S01)
First, the metal piece 22 to be the circuit layer 12 is formed. The metal plate 42 (rolled plate of oxygen-free copper in this embodiment) is punched to form the metal piece 22. In the present embodiment, as shown in FIG. 4, the metal plate 42 is sandwiched and sheared by the convex mold 62 and the concave mold 63 of the punching machine 61. As a result, the metal piece 22 is punched out from the metal plate 42.

（樹脂組成物配設工程Ｓ０２）
次に、図５に示すように、放熱層１３となる金属板２３の一方の面（図５において上面）に、フィラーとしてのアルミナと、熱硬化型樹脂としてのエポキシ樹脂と、硬化剤と、を含有する樹脂組成物２１を配設する。 (Resin composition arrangement step S02)
Next, as shown in FIG. 5, on one surface (upper surface in FIG. 5) of the metal plate 23 to be the heat dissipation layer 13, alumina as a filler, an epoxy resin as a thermosetting resin, and a curing agent were added. 21 is arranged.

（金属片配置工程Ｓ０３）
次に、樹脂組成物２１の一方の面（図５において上面）に、複数の金属片２２を回路パターン状に配置する。 (Metal piece arrangement step S03)
Next, a plurality of metal pieces 22 are arranged in a circuit pattern on one surface (upper surface in FIG. 5) of the resin composition 21.

（接合工程Ｓ０４）
次に、加圧装置７０の上方押圧板７１および下方押圧板７２の間に配置し、放熱層１３となる金属板２３と樹脂組成物２１と金属片２２とを積層方向に加圧するとともに加熱することにより、樹脂組成物２１を硬化させて絶縁樹脂層１１を形成するとともに、金属板２３と絶縁樹脂層１１、絶縁樹脂層１１と金属片２２とを接合して、放熱層１３及び回路層１２を形成する。 (Joining step S04)
Next, it is arranged between the upward pressing plate 71 and the downward pressing plate 72 of the pressurizing device 70, and the metal plate 23 serving as the heat dissipation layer 13, the resin composition 21, and the metal piece 22 are pressurized and heated in the stacking direction. As a result, the resin composition 21 is cured to form the insulating resin layer 11, and the metal plate 23 and the insulating resin layer 11 and the insulating resin layer 11 and the metal piece 22 are joined to form the heat radiating layer 13 and the circuit layer 12. To form.

そして、本実施形態においては、接合工程Ｓ０４では、図５に示すように、金属片２２側（上方押圧板７１側）にクッション材４５を配置し、樹脂組成物２１側（下方押圧板７２）に、クッション材４５の周縁部に対向するガイド壁部５３を備えた受け治具５０を配置し、上方押圧板７１および下方押圧板７２によって金属片２２と樹脂組成物２１とを積層方向に加圧する構成とされている。加圧した際には、クッション材４５の周縁部と受け治具５０のガイド壁部５３が接触することにより、クッション材４５の周縁部が外方に突出することが抑制されることになる。 Then, in the present embodiment, in the joining step S04, as shown in FIG. 5, the cushion material 45 is arranged on the metal piece 22 side (upward pressing plate 71 side), and the resin composition 21 side (downward pressing plate 72). A receiving jig 50 provided with a guide wall portion 53 facing the peripheral edge portion of the cushion material 45 is arranged, and the metal piece 22 and the resin composition 21 are added in the stacking direction by the upward pressing plate 71 and the downward pressing plate 72. It is designed to be pressed. When the pressure is applied, the peripheral edge of the cushion material 45 and the guide wall 53 of the receiving jig 50 come into contact with each other, so that the peripheral edge of the cushion material 45 is prevented from protruding outward.

ここで、クッション材４５は、硬さＨ１が１０°以上７５°以下の範囲内とされていることが好ましい。本実施形態では、例えば、シリコーンゴム等で構成されたものとされている。
また、受け治具５０（ガイド壁部５３）は、硬さＨ２が５０以上１０００以下の範囲内とされていることが好ましい。本実施形態では、例えば、アルミ合金やカーボン等で構成されたものとされている。なお、受け治具の硬さ測定は、ＪＩＳ Ｚ ２２４４：２００９ ビッカース硬さ試験によるものとした。 Here, the cushion material 45 preferably has a hardness H1 within a range of 10 ° or more and 75 ° or less. In this embodiment, for example, it is made of silicone rubber or the like.
Further, the receiving jig 50 (guide wall portion 53) preferably has a hardness H2 in the range of 50 or more and 1000 or less. In this embodiment, for example, it is made of an aluminum alloy, carbon, or the like. The hardness of the receiving jig was measured by the JIS Z 2244: 2009 Vickers hardness test.

また、受け治具５０は、図５に示すように、放熱層１３となる金属板２３と樹脂組成物２１を収容可能であり、かつ、ガイド壁部５３の上端の下方押圧板７２からの高さが金属片２２の配置位置よりも高くなるように構成されていることが好ましい。
さらに、ガイド壁部５３とクッション材４５との接触幅は、１ｍｍ以上２０ｍｍ以下の範囲内とすることが好ましい。 Further, as shown in FIG. 5, the receiving jig 50 can accommodate the metal plate 23 and the resin composition 21 to be the heat dissipation layer 13, and is higher than the downward pressing plate 72 at the upper end of the guide wall portion 53. It is preferable that the metal piece 22 is configured to be higher than the arrangement position of the metal piece 22.
Further, the contact width between the guide wall portion 53 and the cushion material 45 is preferably within the range of 1 mm or more and 20 mm or less.

また、接合工程Ｓ０４においては、加熱温度が１２０℃以上３５０℃以下の範囲内とされ、加熱温度での保持時間が１０分以上１８０分以下の範囲内とされていることが好ましい。また、積層方向の加圧荷重が１ＭＰａ以上３０ＭＰａ以下の範囲内とされていることが好ましい。
ここで、加熱温度の下限は１５０℃以上とすることがさらに好ましく、１７０℃以上とすることがより好ましい。一方、加熱温度の上限は２５０℃以下とすることがさらに好ましく、２００℃以下とすることがより好ましい。
加熱温度での保持時間の下限は３０分以上とすることがさらに好ましく、６０分以上とすることがより好ましい。一方、加熱温度での保持時間の上限は１２０分以下とすることがさらに好ましく、９０分以下とすることがより好ましい。
積層方向の加圧荷重の下限は５ＭＰａ以上とすることがさらに好ましく、８ＭＰａ以上とすることがより好ましい。一方、積層方向の加圧荷重の上限は１５ＭＰａ以下とすることがさらに好ましく、１０ＭＰａ以下とすることがより好ましい。 Further, in the joining step S04, it is preferable that the heating temperature is in the range of 120 ° C. or higher and 350 ° C. or lower, and the holding time at the heating temperature is in the range of 10 minutes or more and 180 minutes or less. Further, it is preferable that the pressurizing load in the stacking direction is within the range of 1 MPa or more and 30 MPa or less.
Here, the lower limit of the heating temperature is more preferably 150 ° C. or higher, and more preferably 170 ° C. or higher. On the other hand, the upper limit of the heating temperature is more preferably 250 ° C. or lower, and more preferably 200 ° C. or lower.
The lower limit of the holding time at the heating temperature is more preferably 30 minutes or more, and more preferably 60 minutes or more. On the other hand, the upper limit of the holding time at the heating temperature is more preferably 120 minutes or less, and more preferably 90 minutes or less.
The lower limit of the pressurizing load in the stacking direction is more preferably 5 MPa or more, and more preferably 8 MPa or more. On the other hand, the upper limit of the pressurizing load in the stacking direction is more preferably 15 MPa or less, and even more preferably 10 MPa or less.

上述した各工程によって、本実施形態である絶縁回路基板１０が製造される。 The insulated circuit board 10 according to the present embodiment is manufactured by each of the steps described above.

（ヒートシンク接合工程Ｓ０５）
次に、この絶縁回路基板１０の放熱層１３の他方の面にヒートシンク３１を接合する。本実施形態では、放熱層１３とヒートシンク３１とを、はんだ材を介して接合している。 (Heat sink joining step S05)
Next, the heat sink 31 is joined to the other surface of the heat radiating layer 13 of the insulating circuit board 10. In the present embodiment, the heat radiating layer 13 and the heat sink 31 are joined via a solder material.

（半導体素子接合工程Ｓ０６）
そして、絶縁回路基板１０の回路層１２に半導体素子３を接合する。本実施形態では、回路層１２と半導体素子３とを、はんだ材を介して接合している。
以上の工程により、図１に示すパワーモジュール１が製造される。 (Semiconductor element bonding step S06)
Then, the semiconductor element 3 is bonded to the circuit layer 12 of the insulating circuit board 10. In the present embodiment, the circuit layer 12 and the semiconductor element 3 are joined via a solder material.
By the above steps, the power module 1 shown in FIG. 1 is manufactured.

以上のような構成とされた本実施形態である絶縁回路基板１０の製造方法によれば、樹脂組成物配設工程Ｓ０２と、金属片配置工程Ｓ０３と、接合工程Ｓ０４と、を有しているので、絶縁樹脂層１１の形成と、金属片２２と絶縁樹脂層１１と金属板２３との接合を同時に行うことができ、効率良く絶縁回路基板１０を製造することができる。
また、エッチング処理を行うことなく、回路パターンを形成することができ、回路層１２の端部形状が精度良く形成されることになり、回路層１２の接合界面の端部における電界集中を抑制することが可能となる。 According to the method for manufacturing the insulating circuit board 10 of the present embodiment having the above-described configuration, the resin composition disposing step S02, the metal piece disposing step S03, and the joining step S04 are included. Therefore, the insulating resin layer 11 can be formed and the metal piece 22, the insulating resin layer 11 and the metal plate 23 can be joined at the same time, and the insulated circuit board 10 can be efficiently manufactured.
Further, the circuit pattern can be formed without performing the etching process, the end shape of the circuit layer 12 is formed with high accuracy, and the electric field concentration at the end of the junction interface of the circuit layer 12 is suppressed. It becomes possible.

そして、本実施形態である絶縁回路基板１０の製造方法によれば、金属片２２側（上方押圧板７１側）にクッション材４５を配置し、樹脂組成物２１側（下方押圧板７２）に、前記クッション材の周縁部に対向するガイド壁部５３を備えた受け治具５０を配置し、金属片２２と樹脂組成物２１とを積層方向に加圧する構成とされているので、加圧した際に、クッション材４５の周縁部と受け治具５０のガイド壁部５３が接触し、クッション材４５の周縁部が外方に突出することが抑制され、樹脂組成物２１を、金属片２２が配置された領域、金属片２２が配置されていない領域、および、クッション材４５の周縁部に相当する領域の全てで、十分に加圧することができ、絶縁性に優れた絶縁樹脂層１１を形成することができるとともに、金属片２２と絶縁樹脂層１１とを強固に接合することが可能となる。 Then, according to the method for manufacturing the insulating circuit board 10 of the present embodiment, the cushion material 45 is arranged on the metal piece 22 side (upper pressing plate 71 side), and the cushion material 45 is arranged on the resin composition 21 side (lower pressing plate 72). A receiving jig 50 having a guide wall portion 53 facing the peripheral edge portion of the cushion material is arranged to pressurize the metal piece 22 and the resin composition 21 in the laminating direction. The peripheral portion of the cushion material 45 and the guide wall portion 53 of the receiving jig 50 are in contact with each other, and the peripheral portion of the cushion material 45 is prevented from protruding outward. The insulating resin layer 11 that can be sufficiently pressurized and has excellent insulating properties is formed in all of the formed region, the region where the metal piece 22 is not arranged, and the region corresponding to the peripheral edge portion of the cushioning material 45. At the same time, the metal piece 22 and the insulating resin layer 11 can be firmly bonded to each other.

以上、本発明の実施形態について説明したが、本発明はこれに限定されることはなく、その発明の技術的思想を逸脱しない範囲で適宜変更可能である。 Although the embodiments of the present invention have been described above, the present invention is not limited to this, and can be appropriately changed without departing from the technical idea of the invention.

例えば、本実施形態では、絶縁回路基板の回路層にパワー半導体素子を搭載してパワーモジュールを構成するものとして説明したが、これに限定されることはない。例えば、絶縁回路基板にＬＥＤ素子を搭載してＬＥＤモジュールを構成してもよいし、絶縁回路基板の回路層に熱電素子を搭載して熱電モジュールを構成してもよい。 For example, in the present embodiment, the power module is configured by mounting the power semiconductor element on the circuit layer of the insulated circuit board, but the present embodiment is not limited to this. For example, an LED element may be mounted on an insulated circuit board to form an LED module, or a thermoelectric element may be mounted on a circuit layer of an insulated circuit board to form a thermoelectric module.

また、本実施形態では、絶縁回路基板（金属基板）とヒートシンクとをはんだ層を介して接合したものとして説明したが、これに限定されることはなく、絶縁回路基板（金属基板）とヒートシンクとグリースを介して積層してもよい。
さらに、ヒートシンクの材質や構造は、本実施形態に限定されることなく、適宜設計変更してもよい。 Further, in the present embodiment, the insulation circuit board (metal substrate) and the heat sink have been described as being joined via a solder layer, but the present invention is not limited to this, and the insulation circuit board (metal substrate) and the heat sink are used. It may be laminated via grease.
Further, the material and structure of the heat sink are not limited to this embodiment, and the design may be changed as appropriate.

さらに、本実施形態においては、金属板４２を打ち抜くことにより、金属片２２を形成する金属片形成工程Ｓ０１を有するものとして説明したが、これに限定されることはなく、他の手段によって形成された金属片を用いてもよい。
また、本実施形態では、接合工程において、金属片とともに金属板を接合し、絶縁樹脂層の他方の面側に放熱層を形成するものとして説明したが、これに限定されることはなく、放熱層を形成しないものであってもよい。 Further, in the present embodiment, it has been described that the metal piece forming step S01 for forming the metal piece 22 by punching the metal plate 42 is provided, but the present invention is not limited to this, and the metal piece 22 is formed by other means. A piece of metal may be used.
Further, in the present embodiment, in the joining step, the metal plate is joined together with the metal piece to form a heat dissipation layer on the other surface side of the insulating resin layer, but the present invention is not limited to this, and heat dissipation is not limited to this. It may not form a layer.

さらに、本実施形態では、ガイド壁部を有する受け治具を用いて加圧する構成として説明したが、これに限定されることはなく、図６に示すように、ガイド壁部５３がクッション材４５側に配設されていてもよい。
また、本実施形態では、絶縁樹脂層をエポキシ樹脂で構成したものとして説明したが、絶縁樹脂層をポリイミド樹脂で構成したものであってもよい。この場合、接合工程において、既に硬化したポリイミド樹脂を積層して加圧および加熱して金属片と絶縁樹脂層とを接合することになる。 Further, in the present embodiment, the configuration has been described as pressurizing using a receiving jig having a guide wall portion, but the present invention is not limited to this, and as shown in FIG. 6, the guide wall portion 53 is the cushion material 45. It may be arranged on the side.
Further, in the present embodiment, the insulating resin layer is described as being composed of an epoxy resin, but the insulating resin layer may be composed of a polyimide resin. In this case, in the joining step, the already cured polyimide resin is laminated, pressurized and heated to join the metal piece and the insulating resin layer.

以下に、本発明の効果を確認すべく行った確認実験の結果について説明する。 The results of the confirmation experiment conducted to confirm the effect of the present invention will be described below.

放熱層となる金属板として、無酸素銅の圧延板（５０ｍｍ×６０ｍｍ×厚さ２．０ｍｍ）を準備し、この金属板の一方の面に表１に示す樹脂組成物のシート材を配置した。
そして、樹脂組成物の一方の面に表１に示す金属片（２０ｍｍ×２０ｍｍ）をパターン状に配置した。このとき、金属片同士の最近接距離が表１に示す値となるように金属片を配置した。 An oxygen-free copper rolled plate (50 mm × 60 mm × thickness 2.0 mm) was prepared as a metal plate to be a heat radiating layer, and a sheet material of the resin composition shown in Table 1 was arranged on one surface of the metal plate. ..
Then, the metal pieces (20 mm × 20 mm) shown in Table 1 were arranged in a pattern on one surface of the resin composition. At this time, the metal pieces were arranged so that the closest distance between the metal pieces was the value shown in Table 1.

そして、接合工程として、表２に示す条件で、金属板と樹脂組成物と金属片とを積層方向に加圧するとともに加熱し、樹脂組成物を硬化させて絶縁樹脂層を形成するとともに、金属板と絶縁樹脂層と金属片（金属板）を接合した。
このとき、本発明例１，２においては、金属片側にシリコーンゴムからなるゴム状弾性体（厚さ４．０ｍｍ）を配置し、かつ、樹脂組成物側にガイド壁部を備えた受け治具を配置し、積層方向に加圧した。
一方、比較例１，２においては、金属片側にシリコーンゴムからなるゴム状弾性体（厚さ４．０ｍｍ）を配置し、樹脂組成物側には受け治具を配置せず、積層方向に加圧した。 Then, as a joining step, under the conditions shown in Table 2, the metal plate, the resin composition, and the metal piece are pressurized and heated in the laminating direction to cure the resin composition to form an insulating resin layer, and the metal plate is formed. And the insulating resin layer and the metal piece (metal plate) were joined.
At this time, in Examples 1 and 2 of the present invention, a receiving jig in which a rubber-like elastic body (thickness 4.0 mm) made of silicone rubber is arranged on one side of the metal and a guide wall portion is provided on the resin composition side. Was placed and pressurized in the stacking direction.
On the other hand, in Comparative Examples 1 and 2, a rubber-like elastic body (thickness 4.0 mm) made of silicone rubber was arranged on one side of the metal, and a receiving jig was not arranged on the resin composition side, and the material was added in the stacking direction. I pressed it.

上述のようにして得られた絶縁回路基板について、絶縁樹脂層の割れ、冷熱サイクル後の金属片の剥離、について評価した。
絶縁樹脂層の割れは、接合工程後に、絶縁樹脂層を目視で観察して評価した。
また、冷熱サイクル試験（−４５℃←→２００℃、５００サイクル）を実施した後に、金属片の剥離の有無を評価した。 The insulating circuit board obtained as described above was evaluated for cracking of the insulating resin layer and peeling of metal pieces after the thermal cycle.
The cracks in the insulating resin layer were evaluated by visually observing the insulating resin layer after the joining step.
Further, after carrying out a cold cycle test (−45 ° C. ← → 200 ° C., 500 cycles), the presence or absence of peeling of metal pieces was evaluated.

Figure 0006901019
Figure 0006901019

Figure 0006901019
Figure 0006901019

比較例１では、エポキシ樹脂からなる樹脂シートを用いて絶縁樹脂層を構成し、接合工程において受け治具を使用しなかった。接合工程後に絶縁樹脂層に割れが認められた。このため、冷熱サイクル試験は実施しなかった。
比較例２では、ポリイミド樹脂からなる樹脂シートを用いて絶縁樹脂層を構成し、接合工程において受け治具を使用しなかった。接合工程後に絶縁樹脂層に割れが認められなかったが、冷熱サイクル試験後に金属片の剥離が確認された。 In Comparative Example 1, an insulating resin layer was formed by using a resin sheet made of an epoxy resin, and a receiving jig was not used in the joining process. Cracks were observed in the insulating resin layer after the joining process. Therefore, the cold cycle test was not performed.
In Comparative Example 2, the insulating resin layer was formed by using a resin sheet made of polyimide resin, and a receiving jig was not used in the joining process. No cracks were observed in the insulating resin layer after the joining process, but peeling of metal pieces was confirmed after the thermal cycle test.

これに対して、エポキシ樹脂からなる樹脂シートを用いて絶縁樹脂層を構成し、接合工程において受け治具を使用した本発明例１、および、ポリイミド樹脂からなる樹脂シートを用いて絶縁樹脂層を構成し、接合工程において受け治具を使用した比較例２においては、いずれも接合工程後に絶縁樹脂層に割れが認められず、冷熱サイクル試験後に金属片の剥離も認められなかった。 On the other hand, the insulating resin layer is formed by using a resin sheet made of epoxy resin, and the insulating resin layer is formed by using Example 1 of the present invention in which a receiving jig is used in the joining process and a resin sheet made of polyimide resin. In Comparative Example 2 in which the receiving jig was used in the joining step, no crack was observed in the insulating resin layer after the joining step, and no peeling of metal pieces was observed after the thermal cycle test.

以上のことから、本発明例によれば、樹脂組成物の上に金属片を回路パターン状に配置した場合であっても、樹脂組成物の全体を均一に加圧することが可能な絶縁回路基板の製造方法を提供可能であることが確認された。 From the above, according to the example of the present invention, even when the metal pieces are arranged in a circuit pattern on the resin composition, the entire resin composition can be uniformly pressurized. It was confirmed that it is possible to provide the manufacturing method of.

１ パワーモジュール
３ 半導体素子
１０ 絶縁回路基板
１１ 絶縁樹脂層
１２ 回路層
１３ 放熱層
２１ 樹脂組成物
２２ 金属片
２３ 金属板
４５ クッション材
５０ 受け治具
５３ ガイド壁部
1 Power module 3 Semiconductor element 10 Insulated circuit board 11 Insulated resin layer 12 Circuit layer 13 Heat dissipation layer 21 Resin composition 22 Metal pieces 23 Metal plates 45 Cushion material 50 Receiving jig 53 Guide wall

Claims (7)

絶縁樹脂層と、前記絶縁樹脂層の一方の面に回路パターン状に配設された金属片からなる回路層と、を備えた絶縁回路基板の製造方法であって、
前記絶縁樹脂層となる樹脂材の上に前記金属片を回路パターン状に配置する金属片配置工程と、
前記樹脂材と前記金属片とを少なくとも積層方向に加圧するとともに加熱することにより、前記絶縁樹脂層と前記金属片とを接合する接合工程と、を有し、
前記接合工程では、前記金属片と前記樹脂材とを積層方向に加圧する加圧治具が、前記金属片側に配置されたクッション材と、前記クッション材の周縁部に対向する位置に配置されたガイド壁部と、を備えており、加圧時に前記クッション材の周縁部と前記ガイド壁部とを接触させることを特徴とする絶縁回路基板の製造方法。 A method for manufacturing an insulated circuit board, comprising: an insulating resin layer and a circuit layer composed of metal pieces arranged in a circuit pattern on one surface of the insulating resin layer.
A metal piece arranging step of arranging the metal pieces in a circuit pattern on the resin material to be the insulating resin layer,
It has a joining step of joining the insulating resin layer and the metal piece by pressurizing and heating the resin material and the metal piece at least in the laminating direction.
In the joining step, a pressurizing jig that pressurizes the metal piece and the resin material in the stacking direction is arranged at a position facing the cushion material arranged on the metal piece side and the peripheral edge portion of the cushion material. A method for manufacturing an insulated circuit board, comprising a guide wall portion, wherein the peripheral edge portion of the cushion material and the guide wall portion are brought into contact with each other during pressurization. 前記ガイド壁部の硬さが前記クッション材の硬さよりも大きいことを特徴とする請求項１に記載の絶縁回路基板の製造方法。 The method for manufacturing an insulated circuit board according to claim 1, wherein the hardness of the guide wall portion is larger than the hardness of the cushion material. 前記ガイド壁部が、前記加圧治具の前記樹脂材側に配されていることを特徴とする請求項１又は請求項２に記載の絶縁回路基板の製造方法。 The method for manufacturing an insulated circuit board according to claim 1 or 2, wherein the guide wall portion is arranged on the resin material side of the pressurizing jig. 前記絶縁回路基板が、前記絶縁樹脂層の他方の面に配置された放熱層を更に含み、
前記接合工程において、前記金属片と前記絶縁樹脂層、および、前記放熱層と前記絶縁樹脂層を同時に接合することを特徴とする請求項１から請求項３のいずれか一項に記載の絶縁回路基板の製造方法。 The insulating circuit board further includes a heat radiating layer arranged on the other surface of the insulating resin layer.
The insulating circuit according to any one of claims 1 to 3, wherein in the joining step, the metal piece and the insulating resin layer, and the heat radiating layer and the insulating resin layer are joined at the same time. Substrate manufacturing method. 前記樹脂材がエポキシ樹脂であり、前記接合工程において、前記樹脂材を硬化させて前記絶縁樹脂層を形成することを特徴とする請求項１から請求項４のいずれか一項に記載の絶縁回路基板の製造方法。 The insulating circuit according to any one of claims 1 to 4, wherein the resin material is an epoxy resin, and the resin material is cured to form the insulating resin layer in the joining step. Substrate manufacturing method. 前記樹脂材がポリイミド樹脂であることを特徴とする請求項１から請求項４のいずれか一項に記載の絶縁回路基板の製造方法。 The method for manufacturing an insulated circuit board according to any one of claims 1 to 4, wherein the resin material is a polyimide resin. 前記クッション材がシリコーンゴムで構成されていることを特徴とする請求項１から請求項６のいずれか一項に記載の絶縁回路基板の製造方法。 The method for manufacturing an insulated circuit board according to any one of claims 1 to 6, wherein the cushion material is made of silicone rubber.
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