JP6890871B1 - Method for producing ester group-containing acid dianhydride derivative - Google Patents

Method for producing ester group-containing acid dianhydride derivative Download PDF

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JP6890871B1
JP6890871B1 JP2021500977A JP2021500977A JP6890871B1 JP 6890871 B1 JP6890871 B1 JP 6890871B1 JP 2021500977 A JP2021500977 A JP 2021500977A JP 2021500977 A JP2021500977 A JP 2021500977A JP 6890871 B1 JP6890871 B1 JP 6890871B1
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寛之 田原
寛之 田原
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    • C07D407/02Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group C07D405/00 containing two hetero rings
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Abstract

本発明は半導体素子へ悪影響を及ぼす不純物を回避し得、且つ安価で環境衛生上の問題の少ない原料から、工業的に利用可能な反応温度で、短時間に効率よく、エステル基含有酸二無水物誘導体が得られる製造方法の提供を目的とし、一般式(1)で示される芳香族ジオールの低級アルカン酸エステルと、式(3)で示されるトリメット酸無水物を、アミン化合物の存在下、有機溶媒中で反応させることを特徴とする、一般式(4)で示されるエステル基含有酸二無水物誘導体の製造方法を提供する。The present invention can avoid impurities that adversely affect the semiconductor element, and can efficiently use an ester group-containing acid dianhydride at a reaction temperature that can be industrially used from a raw material that is inexpensive and has few environmental hygiene problems. For the purpose of providing a production method for obtaining a product derivative, a lower alkanoic acid ester of an aromatic diol represented by the general formula (1) and a trimetic acid anhydride represented by the formula (3) are used in the presence of an amine compound. Provided is a method for producing an ester group-containing acid dianhydride derivative represented by the general formula (4), which comprises reacting in an organic solvent.

Description

本発明は、ポリエステルイミド樹脂等の原料として有用な後述の一般式(4)で示されるエステル基含有酸二無水物誘導体の製造方法に関する。 The present invention relates to a method for producing an ester group-containing acid dianhydride derivative represented by the general formula (4) described later, which is useful as a raw material for a polyesterimide resin or the like.

エステル基含有酸二無水物誘導体は、ポリエステルイミド等の耐熱性樹脂の原料、エポキシ樹脂等の硬化剤、または樹脂改質剤として有用であり、電気・電子分野向けの材料として用いられている。これらを製造する方法としては、例えば、(i)ベンゼン、トルエン等の有機溶媒中、無水トリメリット酸クロリドとジオール類との反応による方法(例えば、特許文献1参照)、あるいはトリメリット酸無水物とジオール類の低級アルカン酸エステルとのエステル交換反応において、(ii)特定の溶媒の存在下に280℃の高温領域で加熱することにより行う方法(例えば、特許文献2参照)、または(iii)シリカ・アルミナ系化合物やアルカリ金属化合物などの無機化合物系触媒の存在下に行う方法(例えば、特許文献3参照)や(iv)ホスホニウム塩等の相間移動触媒の存在下に行う方法(例えば、特許文献4参照)等が知られている。 The ester group-containing acid dianhydride derivative is useful as a raw material for a heat-resistant resin such as polyesterimide, a curing agent such as an epoxy resin, or a resin modifier, and is used as a material for the electric and electronic fields. Examples of the method for producing these include (i) a method by reacting trimellitic anhydride chloride with diols in an organic solvent such as benzene and toluene (see, for example, Patent Document 1), or trimellitic anhydride. In the transesterification reaction between diols and lower alkanoic acid esters of diols, (ii) a method performed by heating in a high temperature region of 280 ° C. in the presence of a specific solvent (see, for example, Patent Document 2), or (iii). A method performed in the presence of an inorganic compound-based catalyst such as a silica-alumina compound or an alkali metal compound (see, for example, Patent Document 3) and a method performed in the presence of an interphase transfer catalyst such as (iv) a phosphonium salt (for example, patent). Reference 4) and the like are known.

特公昭43−5911号公報Special Publication No. 43-5911 特開平10−147582号公報Japanese Unexamined Patent Publication No. 10-147582 特開平7−41472号公報Japanese Unexamined Patent Publication No. 7-41472 特開2006−206486号公報Japanese Unexamined Patent Publication No. 2006-206486

東芝レビュー Vol.51 No.8 p.58-61 2000年Toshiba Review Vol.51 No.8 p.58-61 2000

前記背景技術(i)に開示される方法は、高価で且つ環境衛生上取り扱い難い無水トリメリット酸クロリドを使用しなければならない。(ii)に開示される方法は、反応が工業的に困難な高温を必要とする問題がある。(iii)に開示される方法では、使用する無機化合物系触媒が除去し難く、得られるエステル基含有酸二無水物誘導体の不純物となりやすい。また、(iv)に開示される方法では、反応4時間時点における反応率が80〜86%と満足できるものではなく、さらにホスホニウム塩を使用するため、得られるエステル基含有酸に無水物誘導体中にリンが残存してしまう可能性がある。特に、半導体向けの材料に無機化合物系触媒由来のアルカリ金属やアルミニウム、相間移動触媒由来のリンが残存してしまうと、半導体素子に酸化膜耐圧不良、p反転不良、n反転不良が発生し、製品の歩留まりや信頼性に悪影響を及ぼす(例えば、非特許文献1参照)。本発明は工業的に利用可能な反応温度で短時間に効率よく反応させる製造方法を提供するものである。 The method disclosed in the background technique (i) must use trimellitic anhydride chloride, which is expensive and difficult to handle in terms of environmental hygiene. The method disclosed in (ii) has a problem that it requires a high temperature at which the reaction is industrially difficult. In the method disclosed in (iii), it is difficult to remove the inorganic compound-based catalyst used, and it tends to become an impurity of the obtained ester group-containing acid dianhydride derivative. Further, in the method disclosed in (iv), the reaction rate at 4 hours after the reaction is not satisfactory as 80 to 86%, and since a phosphonium salt is used, the obtained ester group-containing acid is contained in an anhydride derivative. Phosphorus may remain in the. In particular, if alkali metal or aluminum derived from an inorganic compound catalyst or phosphorus derived from a phase transfer catalyst remains in a material for semiconductors, oxide film pressure resistance failure, p-reversal failure, and n-reversal failure occur in the semiconductor element. It adversely affects the yield and reliability of products (see, for example, Non-Patent Document 1). The present invention provides a production method for efficiently reacting in a short time at an industrially available reaction temperature.

本発明者らは、上記課題を鑑み鋭意検討を重ねた結果、ポリエステルイミド樹脂等の原料として有用な一般式(4)で示されるエステル基含有酸二無水物誘導体を、芳香族ジオールの低級アルカン酸エステルとトリメリット酸無水物を、アミン化合物の存在下、溶媒中でエステル交換反応を行うことにより、効率よく製造し得ることを見出し、本発明を完成するに至った。
すなわち、本発明は以下のとおりである。
[1] 下記一般式(1):

Figure 0006890871

(式中、Arは、下記式(2):
Figure 0006890871

で表される群から選ばれる2価の芳香族基を表し、
、Rは、同一または異なって、炭素数1〜3のアルキル基を表し、
そしてRは、同一または異なって、水素原子または炭素数1〜3のアルキル基を表す)
で示される芳香族ジオールの低級アルカン酸エステルと、式(3):
Figure 0006890871

で示されるトリメット酸無水物を、アミン化合物の存在下、有機溶媒中で反応させることを特徴とする
下記一般式(4):
Figure 0006890871

(式中、Arは、上記と同義である)
で示される化合物の製造方法に関する。As a result of diligent studies in view of the above problems, the present inventors have obtained an ester group-containing acid dianhydride derivative represented by the general formula (4), which is useful as a raw material for polyesterimide resins and the like, as a lower alkane of an aromatic diol. We have found that an acid ester and a trimellitic anhydride can be efficiently produced by carrying out an ester exchange reaction in a solvent in the presence of an amine compound, and have completed the present invention.
That is, the present invention is as follows.
[1] The following general formula (1):
Figure 0006890871

(In the formula, Ar is the following formula (2):
Figure 0006890871

Represents a divalent aromatic group selected from the group represented by
R 1 and R 2 represent alkyl groups having 1 to 3 carbon atoms, which are the same or different.
And R 3 is the same or different and represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms).
The lower alkanoic acid ester of the aromatic diol represented by the formula (3):
Figure 0006890871

The following general formula (4), which comprises reacting the trimetic anhydride represented by (1) in an organic solvent in the presence of an amine compound:
Figure 0006890871

(In the formula, Ar is synonymous with the above)
The present invention relates to a method for producing a compound represented by.

本発明のエステル基含有酸二無水物誘導体はポリエステルイミド樹脂等の耐熱樹脂の原料、エポキシ樹脂等の硬化剤、または樹脂改質剤として利用される。本発明はアミン化合物の存在下で、安価で環境衛生上の問題も少ない原料から、工業的に利用可能な反応温度で、短時間に効率よく製造できるため、極めて有用である。本発明を用いて得られる化合物は、触媒由来の金属分やリン元素などの半導体素子へ悪影響を及ぼす不純物が残留する可能性が低いため、特に電気・電子分野向けの材料として有用である。 The ester group-containing acid dianhydride derivative of the present invention is used as a raw material for a heat-resistant resin such as a polyesterimide resin, a curing agent such as an epoxy resin, or a resin modifier. The present invention is extremely useful because it can be efficiently produced in a short time from a raw material that is inexpensive and has few environmental hygiene problems in the presence of an amine compound at an industrially usable reaction temperature. The compound obtained by using the present invention is particularly useful as a material for the electric and electronic fields because it is unlikely that impurities such as catalyst-derived metals and phosphorus elements that adversely affect the semiconductor element remain.

以下に本発明の実施の形態について詳細に説明する。先ず、本明細書および特許請求の範囲において用いられる用語について説明する。各用語は、他に断りのない限り、以下の意義を有する。 Hereinafter, embodiments of the present invention will be described in detail. First, terms used in the present specification and claims will be described. Unless otherwise noted, each term has the following meanings:

本発明において「炭素数1〜3のアルキル基」は、炭素数1から3の、直鎖状または分岐鎖状の飽和炭化水素基を意味し、具体的にはメチル基、エチル基、プロピル基、イソプロピル基が挙げられる。
本発明において「炭素数1〜10のアルキル基」は、炭素数1から10の、直鎖状、分岐鎖状または環状の飽和炭化水素基を意味し、前記「炭素数1から3のアルキル基」の例に加え、ブチル基、ペンチル基、へキシル基、オクチル基、デシル基またはそれらの異性体等を例示できる。
In the present invention, the "alkyl group having 1 to 3 carbon atoms" means a linear or branched saturated hydrocarbon group having 1 to 3 carbon atoms, and specifically, a methyl group, an ethyl group, or a propyl group. , Isopropyl group.
In the present invention, the "alkyl group having 1 to 10 carbon atoms" means a linear, branched or cyclic saturated hydrocarbon group having 1 to 10 carbon atoms, and the above-mentioned "alkyl group having 1 to 3 carbon atoms". , Butyl group, pentyl group, hexyl group, octyl group, decyl group, isomers thereof and the like can be exemplified.

本発明において「アリール基」は、炭素数6から10の、単環式若しくは多環式の、芳香族炭化水素基を意味し、例えば、フェニル基、ナフチル基等を例示できる。 In the present invention, the "aryl group" means a monocyclic or polycyclic aromatic hydrocarbon group having 6 to 10 carbon atoms, and examples thereof include a phenyl group and a naphthyl group.

本発明において「ハロゲン原子」は、フッ素原子、塩素原子、臭素原子またはヨウ素原子を意味する。 In the present invention, the "halogen atom" means a fluorine atom, a chlorine atom, a bromine atom or an iodine atom.

本発明において「炭素数1〜10のヒドロキシアルキル基」は、少なくとも1つのヒドロキシ基で置換された前記「炭素数1〜10のアルキル基」を意味し、ヒドロキシメチル基、1−ヒドロキシエチル基、2−ヒドロキシエチル基等を例示できる。 In the present invention, the "hydroxyalkyl group having 1 to 10 carbon atoms" means the "alkyl group having 1 to 10 carbon atoms" substituted with at least one hydroxy group, and the hydroxymethyl group, 1-hydroxyethyl group, and the like. 2-Hydroxyethyl group and the like can be exemplified.

次に、本発明の製造方法について詳しく述べる。 Next, the production method of the present invention will be described in detail.

本発明は、一般式(1):

Figure 0006890871

(式中、Arは下記式(2):
Figure 0006890871

で表される群から選ばれる2価の芳香族基を表し、
、Rは同一または異なって、炭素数1〜3のアルキル基を表し、
そしてRは、同一または異なって、水素原子または炭素数1〜3のアルキル基を表す)
で示される芳香族ジオールの低級アルカン酸エステルと、式(3):
Figure 0006890871

で示されるトリメット酸無水物を、アミン化合物の存在下、有機溶媒中で反応させることを特徴とする
下記一般式(4):
Figure 0006890871

(式中、Arは、上記と同義である)
で示される化合物の製造方法に関するものである。The present invention has the general formula (1):
Figure 0006890871

(In the formula, Ar is the following formula (2):
Figure 0006890871

Represents a divalent aromatic group selected from the group represented by
R 1 and R 2 are the same or different and represent alkyl groups having 1 to 3 carbon atoms.
And R 3 is the same or different and represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms).
The lower alkanoic acid ester of the aromatic diol represented by the formula (3):
Figure 0006890871

The following general formula (4), which comprises reacting the trimetic anhydride represented by (1) in an organic solvent in the presence of an amine compound:
Figure 0006890871

(In the formula, Ar is synonymous with the above)
It relates to the manufacturing method of the compound shown by.

前記一般式(1)において、R、Rは同一または異なって、炭素数1〜3のアルキル基であり、全てメチル基であるものが好ましい。In the general formula (1), R 1 and R 2 are the same or different, and are alkyl groups having 1 to 3 carbon atoms, preferably all methyl groups.

前記一般式(1)において、

Figure 0006890871

で表し、Rは、同一または異なって、水素原子または炭素数1〜3のアルキル基であり、水素原子またはメチル基であるものが好ましく、全て水素原子であるものがより好ましい。In the general formula (1)
Figure 0006890871

Expressed in, R 3 are the same or different, a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, preferably has a hydrogen atom or a methyl group, it is more preferable that all hydrogen atoms.

本発明の製造方法に用いる、上記一般式(1)で示される化合物は、市販されているか、または当業者に公知の方法により合成することができる。例えば、低級アルカン酸無水物と芳香族ジオールとを加熱反応することで上記一般式(1)で示される化合物を容易に合成することができる。このとき従来公知のp−トルエンスルホン酸ナトリウム等のエステル化触媒を使用することもできる。
ここで、低級アルカン酸無水物としては、無水酢酸、プロピオン酸無水物、酪酸無水物、イソ酪酸無水物が例示されるが、好ましくは、無水酢酸が挙げられる。芳香族ジオールとしては、ヒドロキノン、レゾルシノール、ピロカテコール、4,4’−ビフェニルジオール、2,2’−ビフェニルジオール、3,4’−ビフェニルジオール、4,4’−ジヒドロキシジフェニルエーテル、2,2’−ジヒドロキシジフェニルエーテル、あるいはこれらの芳香環が、同一または異なって、メチル基、エチル基、プロピル基またはイソプロピル基で置換されたものが例示されるが、好ましくは、ヒドロキノン、レゾルシノール、メチルヒドロキノン、2,2’−ビフェニルジオール等が挙げられる。
The compound represented by the above general formula (1) used in the production method of the present invention can be commercially available or synthesized by a method known to those skilled in the art. For example, the compound represented by the above general formula (1) can be easily synthesized by heating and reacting a lower alkanoic anhydride with an aromatic diol. At this time, a conventionally known esterification catalyst such as sodium p-toluenesulfonate can also be used.
Here, examples of the lower alkanoic anhydride include acetic anhydride, propionic anhydride, butyric anhydride, and isobutyric anhydride, and acetic anhydride is preferable. Aromatic diols include hydroquinone, resorcinol, pyrocatechol, 4,4'-biphenyldiol, 2,2'-biphenyldiol, 3,4'-biphenyldiol, 4,4'-dihydroxydiphenyl ether, 2,2'-. Examples of dihydroxydiphenyl ethers, or those in which these aromatic rings are the same or differently substituted with a methyl group, an ethyl group, a propyl group or an isopropyl group, are exemplified, but hydroquinone, resorcinol, methylhydroquinone, 2, 2 '-Biphenyldiol and the like can be mentioned.

本発明の製造に用いるトリメリット酸無水物の使用量は、特に限定されないが、一般式(1)で示される化合物1モルに対して1〜5モルの範囲で使用するのが好ましく、不純物制御や作業性の観点から1.8〜2.4モルで使用するのが好ましい。 The amount of trimellitic acid anhydride used in the production of the present invention is not particularly limited, but it is preferably used in the range of 1 to 5 mol with respect to 1 mol of the compound represented by the general formula (1), and impurity control. From the viewpoint of workability and workability, it is preferable to use 1.8 to 2.4 mol.

本発明の製造に用いるアミン化合物は、特に限定されず、1級、2級または3級アミン化合物であってよいが、反応性の観点から3級アミン化合物が好ましい。さらに好ましくは下記一般式(5):

Figure 0006890871

(式中、R、R、Rは、同一または異なって、炭素数1〜10のアルキル基、置換されてもよいピリジル基またはアリール基を表す)
で示される化合物である。R、R、Rは、例えば、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ペンチル基、シクロペンチル基、ヘキシル基、シクロヘキシル基、オクチル基、デシル基、置換されてもよいピリジル基、フェニル基等が挙げられる。ここで「置換されてもよいピリジル基」は、例えば、非置換の2−、3−または4−ピリジル基、あるいは炭素数1〜10のアルキル基、アリール基、ハロゲン原子、アミノ基、ニトリル基、炭素数1〜10のヒドロキシアルキル基およびカルボキシ基からなる群より選択される少なくとも1つの基で置換された2−、3−または4−ピリジル基等が挙げられる。一般式(5)で示される化合物は、具体的には、4−ジメチルアミノピリジン、トリエチルアミン、トリプロピルアミン、トリイソプロピルアミン、トリブチルアミン、トリペンチルアミン、トリヘキシルアミン、ジメチル(オクチル)アミン、トリオクチルアミン等が挙げられ、これらの化合物を単独でまたは2種類以上混合してもよい。The amine compound used in the production of the present invention is not particularly limited and may be a primary, secondary or tertiary amine compound, but a tertiary amine compound is preferable from the viewpoint of reactivity. More preferably, the following general formula (5):
Figure 0006890871

(In the formula, R 4 , R 5 , and R 6 represent the same or different alkyl groups having 1 to 10 carbon atoms, and optionally substituted pyridyl groups or aryl groups).
It is a compound indicated by. R 4 , R 5 , and R 6 are, for example, methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, tert-butyl group, pentyl group, cyclopentyl group, hexyl group, cyclohexyl group, octyl group, Examples thereof include a decyl group, a pyridyl group which may be substituted, a phenyl group and the like. Here, the "optionally substituted pyridyl group" is, for example, an unsubstituted 2-, 3- or 4-pyridyl group, or an alkyl group having 1 to 10 carbon atoms, an aryl group, a halogen atom, an amino group, or a nitrile group. , 2-, 3- or 4-pyridyl groups substituted with at least one group selected from the group consisting of hydroxyalkyl groups having 1 to 10 carbon atoms and carboxy groups. Specifically, the compound represented by the general formula (5) is 4-dimethylaminopyridine, triethylamine, tripropylamine, triisopropylamine, tributylamine, tripentylamine, trihexylamine, dimethyl (octyl) amine, tri. Examples thereof include octylamine, and these compounds may be used alone or in combination of two or more.

本発明の製造に用いるアミン化合物の使用量は、特に限定されないが、一般式(1)で示される化合物1モルに対して、0.1〜10モル%の範囲で使用するのが好ましく、0.5〜1.0モル%の範囲で使用するのがより好ましい。 The amount of the amine compound used in the production of the present invention is not particularly limited, but it is preferably used in the range of 0.1 to 10 mol% with respect to 1 mol of the compound represented by the general formula (1), and is 0. . More preferably, it is used in the range of 5 to 1.0 mol%.

本発明の反応には有機溶媒を用いる。使用する溶媒は反応温度(170〜250℃)付近または反応温度を超える沸点を持ち、設定される反応温度に応じ適宜選択されるが、反応に不活性な溶媒であれば特に限定されない。溶媒は単独または2種類以上を任意の割合で混合しても良い。具体的には、1,2−ジクロロベンゼン、1,2,4−トリクロロベンゼンのようなポリ塩化ベンゼン、2,3−ジクロロトルエンのようなポリ塩化トルエンが使用可能である。脱水された非プロトン性の極性溶媒、例えばスルホラン、N−メチルピロリドンも使用可能である。溶媒の使用量は一般式(1)で示される芳香族ジオールの低級アルカン酸エステルに対し、2〜10倍量(重量基準)、好ましくは3.75〜7.2倍量(重量基準)である。 An organic solvent is used for the reaction of the present invention. The solvent used has a boiling point near the reaction temperature (170 to 250 ° C.) or exceeds the reaction temperature, and is appropriately selected according to the set reaction temperature, but is not particularly limited as long as it is an inert solvent for the reaction. The solvent may be used alone or in admixture of two or more in any proportion. Specifically, polychlorinated benzene such as 1,2-dichlorobenzene and 1,2,4-trichlorobenzene, and polychlorinated toluene such as 2,3-dichlorotoluene can be used. Dehydrated aprotic polar solvents such as sulfolane, N-methylpyrrolidone can also be used. The amount of the solvent used is 2 to 10 times (weight basis), preferably 3.75 to 7.2 times (weight basis) the lower alkanoic acid ester of the aromatic diol represented by the general formula (1). is there.

本発明の反応温度は、特に限定されないが、反応性の観点から170〜250℃が好ましく、200〜220℃がより好ましい。 The reaction temperature of the present invention is not particularly limited, but is preferably 170 to 250 ° C., more preferably 200 to 220 ° C. from the viewpoint of reactivity.

本発明の反応時間は、使用する出発物質の量や種類、溶媒の種類、反応温度などの条件によって適宜設定することができる。通常2〜48時間が好ましく、作業性の観点から12〜24時間であることが好ましい。 The reaction time of the present invention can be appropriately set according to conditions such as the amount and type of starting material used, the type of solvent, and the reaction temperature. Usually, it is preferably 2 to 48 hours, and preferably 12 to 24 hours from the viewpoint of workability.

反応終了後、得られた反応液は通常の方法で後処理を行うことができる。後処理の方法としては、特に限定はされないが、反応混合物をろ過、洗浄等の当業者に公知の、適切な後処理操作に付し、一般式(4)で示される化合物を得る。所望であれば、目的物の性質に従い、再結晶、カラムクロマトグラフィー等の当業者に公知の更なる精製手段に付して、一般式(4)で示される化合物を精製してもよい。 After completion of the reaction, the obtained reaction solution can be post-treated by a usual method. The method of post-treatment is not particularly limited, but the reaction mixture is subjected to an appropriate post-treatment operation known to those skilled in the art such as filtration and washing to obtain a compound represented by the general formula (4). If desired, the compound represented by the general formula (4) may be purified by subjecting it to further purification means known to those skilled in the art such as recrystallization and column chromatography according to the properties of the desired product.

以下に本発明の態様を明らかにするために実施例を示すが、本発明はここに示す実施例のみに限定されるわけではない。 Examples are shown below to clarify aspects of the present invention, but the present invention is not limited to the examples shown here.

実施例および比較例で得られた反応溶液および結晶は、高速液体クロマトグラフィー分析を行い、反応純度または目的物の純度を面積百分率にて算出した。ここで、反応純度とは、反応溶液中(溶媒を除く)の目的物(式(4)で示される化合物)の割合を意味する。測定条件は以下の通りである。 The reaction solutions and crystals obtained in Examples and Comparative Examples were subjected to high performance liquid chromatography analysis, and the reaction purity or the purity of the target product was calculated as an area percentage. Here, the reaction purity means the ratio of the target product (compound represented by the formula (4)) in the reaction solution (excluding the solvent). The measurement conditions are as follows.

<HPLC条件>
試料調製:試料を溶離液に加え、煮沸して溶解させた後、冷却して測定試料とした。
検出器:SPD−20A(株式会社島津製作所製)
オーブン:CTO−20A(株式会社島津製作所製)
ポンプ:LC−20AD(株式会社島津製作所製)
カラム: TSKgel ODS−80TM(東ソー株式会社製)
4.6mmID×25cm,0.5μm
溶離液:アセトニトリル:水:リン酸=450:550:0.5
カラム温度:40℃
流速:1.0mL/min
検出波長:254nm
<HPLC conditions>
Sample preparation: The sample was added to the eluent, boiled to dissolve it, and then cooled to prepare a measurement sample.
Detector: SPD-20A (manufactured by Shimadzu Corporation)
Oven: CTO-20A (manufactured by Shimadzu Corporation)
Pump: LC-20AD (manufactured by Shimadzu Corporation)
Column: TSKgel ODS-80TM (manufactured by Tosoh Corporation)
4.6 mm ID x 25 cm, 0.5 μm
Eluent: Acetonitrile: Water: Phosphoric acid = 450: 550: 0.5
Column temperature: 40 ° C
Flow velocity: 1.0 mL / min
Detection wavelength: 254 nm

実施例および比較例で得られた結晶は、ICP発光分光分析を行い、結晶中のリン含有量を測定した。測定条件は以下の通りである。 The crystals obtained in Examples and Comparative Examples were subjected to ICP emission spectroscopic analysis to measure the phosphorus content in the crystals. The measurement conditions are as follows.

<ICP発光分光分析条件>
試料調製:試料0.05gをNMP25mLに溶解させて測定試料とした。
型式:SPS3500DD(SIIナノテクノロジー株式会社製)
<ICP emission spectroscopic analysis conditions>
Sample preparation: 0.05 g of the sample was dissolved in 25 mL of NMP to prepare a measurement sample.
Model: SPS3500DD (manufactured by SII Nanotechnology Inc.)

<実施例1>
反応器に1,4−ジアセトキシベンゼン(東京化成工業株式会社製)1.00g(5.15mmol)、トリメリット酸無水物(東京化成工業株式会社製)2.08g(10.83mmol)、4−ジメチルアミノピリジン(東京化成工業株式会社製)6.3mg(0.052mmol)および1,2,4−トリクロロベンゼン(東京化成工業株式会社製)3.8gを入れ、210〜220℃で2時間反応させた。この時点での反応純度を表1に示す。
<Example 1>
1,4-Diacetoxybenzene (manufactured by Tokyo Chemical Industry Co., Ltd.) 1.00 g (5.15 mmol), trimellitic acid anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) 2.08 g (10.83 mmol), 4 -Add 6.3 mg (0.052 mmol) of dimethylaminopyridine (manufactured by Tokyo Chemical Industry Co., Ltd.) and 3.8 g of 1,2,4-trichlorobenzene (manufactured by Tokyo Chemical Industry Co., Ltd.) for 2 hours at 210-220 ° C. It was reacted. The reaction purity at this point is shown in Table 1.

<実施例2〜3、比較例1>
4−ジメチルアミノピリジンを表1に示す化合物に変更した以外は、実施例1と同様に反応を行い、反応純度を測定した。結果を表1に示す。
<Examples 2 to 3, Comparative Example 1>
The reaction was carried out in the same manner as in Example 1 except that 4-dimethylaminopyridine was changed to the compound shown in Table 1, and the reaction purity was measured. The results are shown in Table 1.

Figure 0006890871
Figure 0006890871

<実施例4>
反応器に1,4−ジアセトキシベンゼン(東京化成工業株式会社製)36.1g(0.186mol)、トリメリット酸無水物(東京化成工業株式会社製)75.0g(0.390mol)、4−ジメチルアミノピリジン(東京化成工業株式会社製)114mg(0.930mmol)および1,2,4−トリクロロベンゼン(東京化成工業株式会社製)135gを仕込み、210〜220℃で24時間反応させた。反応液を冷却し目的物のスラリー溶液を得た。スラリー溶液をろ過し、得られた結晶を乾燥し、82.5gのp−フェニレンビス(トリメリット酸無水物)を得た(純度98.33%、収率96.8%)。
ICP発光分光分析により得られた結晶のリン含有量を確認したところ、リンは確認されなかった。
<Example 4>
In the reactor, 1,4-diacetoxybenzene (manufactured by Tokyo Chemical Industry Co., Ltd.) 36.1 g (0.186 mol), trimellitic acid anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) 75.0 g (0.390 mol), 4 -Dimethylaminopyridine (manufactured by Tokyo Chemical Industry Co., Ltd.) 114 mg (0.930 mmol) and 135 g of 1,2,4-trichlorobenzene (manufactured by Tokyo Chemical Industry Co., Ltd.) were charged and reacted at 210-220 ° C. for 24 hours. The reaction solution was cooled to obtain a slurry solution of the target product. The slurry solution was filtered and the obtained crystals were dried to obtain 82.5 g of p-phenylenebis (trimellitic acid anhydride) (purity 98.33%, yield 96.8%).
When the phosphorus content of the crystals obtained by ICP emission spectroscopic analysis was confirmed, phosphorus was not confirmed.

<比較例2>
4−ジメチルアミノピリジンを臭化テトラフェニルホスホニウムに変更した以外は、実施例4と同様の操作を行い、78.9gのp−フェニレンビス(トリメリット酸無水物)を得た(純度98.24%、収率92.6%)。ICP発光分光分析により得られた結晶のリン含有量を確認したところ、その含有量は34ppmであった。
<Comparative example 2>
The same procedure as in Example 4 was carried out except that 4-dimethylaminopyridine was changed to tetraphenylphosphonium bromide to obtain 78.9 g of p-phenylenebis (trimellitic anhydride) (purity 98.24). %, Yield 92.6%). When the phosphorus content of the crystal obtained by ICP emission spectroscopic analysis was confirmed, the content was 34 ppm.

<実施例5>
反応器に4,4’−ジアセトキシビフェニル(東京化成工業株式会社製)25.1g(0.0929mol)、トリメリット酸無水物(東京化成工業株式会社製)37.5g(0.1952mol)、4−ジメチルアミノピリジン(東京化成工業株式会社製)56.8mg(0.465mmol)および1,2,4−トリクロロベンゼン(東京化成工業株式会社製)94.5gを入れ、210〜220℃で2時間反応させた。この時点での反応純度を表2に示す。
<Example 5>
In the reactor, 4,4'-diacetoxybiphenyl (manufactured by Tokyo Chemical Industry Co., Ltd.) 25.1 g (0.0929 mol), trimellitic acid anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) 37.5 g (0.1952 mol), Add 56.8 mg (0.465 mmol) of 4-dimethylaminopyridine (manufactured by Tokyo Chemical Industry Co., Ltd.) and 94.5 g of 1,2,4-trichlorobenzene (manufactured by Tokyo Chemical Industry Co., Ltd.) and add 2 at 210-220 ° C. Reacted for time. Table 2 shows the reaction purity at this point.

<比較例3>
4−ジメチルアミノピリジンを表2に示す化合物に変更した以外は、実施例5と同様に反応を行い、反応純度を測定した。結果を表2に示す。
<Comparative example 3>
The reaction was carried out in the same manner as in Example 5 except that 4-dimethylaminopyridine was changed to the compound shown in Table 2, and the reaction purity was measured. The results are shown in Table 2.

Figure 0006890871
Figure 0006890871

<実施例6>
反応器に2,5−ジアセトキシトルエン(東京化成工業株式会社製)1.07g(5.14mmol)、トリメリット酸無水物(東京化成工業株式会社製)2.08g(10.83mmol)、4−ジメチルアミノピリジン(東京化成工業株式会社製)6.3mg(0.052mmol)および1,2,4−トリクロロベンゼン(東京化成工業株式会社製)3.8gを入れ、210〜220℃で2時間反応させた。この時点での反応純度は53.20%であった。
<Example 6>
2,5-Diacetoxytoluene (manufactured by Tokyo Chemical Industry Co., Ltd.) 1.07 g (5.14 mmol), trimellitic acid anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) 2.08 g (10.83 mmol), 4 -Add 6.3 mg (0.052 mmol) of dimethylaminopyridine (manufactured by Tokyo Chemical Industry Co., Ltd.) and 3.8 g of 1,2,4-trichlorobenzene (manufactured by Tokyo Chemical Industry Co., Ltd.) for 2 hours at 210-220 ° C. It was reacted. The reaction purity at this point was 53.20%.

本発明の製法で得られるエステル基含有酸二無水物誘導体は、ポリステルイミド樹脂原料、エポキシ樹脂等の硬化剤、または樹脂改質剤として利用できるが、特に低吸水率ポリエステルイミド原料として有用である。ポリイミドの欠点である吸水率を改善するポリエスエルイミドは高周波対応多層フレキシブルプリント基板等の電子分野向け絶縁材料として極めて有用である。本発明は、その原料であるエステル基含有酸二無水物誘導体を、安価で環境衛生上の問題の少ない原料から、工業的に利用可能な反応温度で、短時間に効率よく反応させる製造方法を提供するものである。さらに本発明の製法で得られるエステル基含有酸二無水物誘導体は、触媒由来の金属分やリン元素などの半導体素子へ悪影響を及ぼす不純物が残留する可能性が低いため、特に電気・電子分野向けの材料として有用である。 The ester group-containing acid dianhydride derivative obtained by the production method of the present invention can be used as a polyesterimide resin raw material, a curing agent such as an epoxy resin, or a resin modifier, and is particularly useful as a polyesterimide raw material having a low water absorption rate. .. Polysellimide, which improves the water absorption rate, which is a drawback of polyimide, is extremely useful as an insulating material for the electronic field such as a high-frequency compatible multilayer flexible printed circuit board. The present invention provides a production method for efficiently reacting an ester group-containing acid dianhydride derivative, which is a raw material thereof, from an inexpensive raw material having few environmental health problems at an industrially usable reaction temperature in a short time. It is to provide. Further, the ester group-containing acid dianhydride derivative obtained by the production method of the present invention is particularly suitable for the electric and electronic fields because it is unlikely that impurities such as catalyst-derived metals and phosphorus elements that adversely affect semiconductor devices remain. It is useful as a material for.

Claims (2)

下記一般式(1):
Figure 0006890871

(式中、Arは、下記式(2):
Figure 0006890871

で表される群から選ばれる2価の芳香族基を表し、
、Rは、同一または異なって、炭素数1〜3のアルキル基を表し、
そしてRは、同一または異なって、水素原子または炭素数1〜3のアルキル基を表す)
で示される芳香族ジオールの低級アルカン酸エステルと、式(3):
Figure 0006890871

で示されるトリメット酸無水物を、3級アミン化合物の存在下、有機溶媒中で反応させることを特徴とする
下記一般式(4):
Figure 0006890871

(式中、Arは、上記と同義である)
で示される化合物の製造方法であって、
3級アミン化合物が下記一般式(5):
Figure 0006890871

(式中、R、R、Rは、同一または異なって、炭素数1〜10のアルキル基、置換されてもよいピリジル基またはアリール基を表す)
で示されるが、但し、合計10〜40個の炭素原子を含む3級アミン化合物を除く、製造方法。
The following general formula (1):
Figure 0006890871

(In the formula, Ar is the following formula (2):
Figure 0006890871

Represents a divalent aromatic group selected from the group represented by
R 1 and R 2 represent alkyl groups having 1 to 3 carbon atoms, which are the same or different.
And R 3 is the same or different and represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms).
The lower alkanoic acid ester of the aromatic diol represented by the formula (3):
Figure 0006890871

The following general formula (4), which comprises reacting the trimetic anhydride represented by (1) in an organic solvent in the presence of a tertiary amine compound:
Figure 0006890871

(In the formula, Ar is synonymous with the above)
It is a method for producing a compound shown by
The tertiary amine compound has the following general formula (5):
Figure 0006890871

(In the formula, R 4 , R 5 , and R 6 represent the same or different alkyl groups having 1 to 10 carbon atoms, and optionally substituted pyridyl groups or aryl groups).
However, a production method excluding a tertiary amine compound containing a total of 10 to 40 carbon atoms.
アミン化合物の添加量が、一般式(1)で示される化合物1モルに対して、0.1〜10mol%である、請求項1に記載の製造方法。 The production method according to claim 1, wherein the amount of the amine compound added is 0.1 to 10 mol% with respect to 1 mol of the compound represented by the general formula (1).
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