JP6883667B2 - Capacitive sensor - Google Patents

Description

The present invention relates to a capacitance type sensor, and more particularly to a capacitance type sensor provided with a transparent electrode containing conductive nanowires.

Patent Document 1 discloses a finger-touch type detection panel in which an X electrode and a Y electrode of an indium tin oxide (ITO) layer are formed on a transparent glass substrate. The finger touch type detection panel described in Patent Document 1 is provided with a portion where the X electrode and the Y electrode cross each other. The Y electrode is electrically connected by a conductor film via an opening. In this way, the detection panel can be made thinner by providing the bridge wiring portion in which the X electrode and the Y electrode are crossed with each other on the substrate and the Y electrode is electrically connected.

Here, as a trend in the market, it is desired to make the shape of the capacitance type sensor a curved surface or to make the capacitance type sensor bendable. Therefore, as a material for the transparent electrode of the capacitance type sensor, a material containing metal nanowires (conductive nanowires) such as gold nanowires, silver nanowires and copper nanowires may be used.

Japanese Unexamined Patent Publication No. 58-166437

When a material containing conductive nanowires is used as the material for the transparent electrodes, there is a problem that the contact area between the independent transparent electrodes and the bridge wiring portion provided at the intersection connecting the transparent electrodes becomes relatively small. .. In other words, the transparent electrode of the material containing the conductive nanowires secures the conductivity with the bridge wiring material by the conductive nanowires exposed on the surface of the transparent electrode, and secures the transparency by the gap between the conductive nanowires. There is. Therefore, when the material of the bridge wiring portion is a material containing conductive nanowires, the contact between the transparent electrode and the bridge wiring portion is a point contact between the wires. Alternatively, when the material of the bridge wiring portion is an oxide-based material such as ITO, the contact between the transparent electrode and the bridge wiring portion is a contact between a wire or a point and a surface of the conductive nanowire. As a result, when a material containing conductive nanowires is used as the material of the transparent electrode, the contact area between the transparent electrode and the bridge wiring portion becomes relatively narrow. Therefore, the conduction stability may decrease.

Further, when electrostatic discharge (ESD; Electrostatic Discharge) occurs and a large current flows to the contact portion between the transparent electrode and the bridge wiring portion, the contact portion may locally generate heat and melt. That is, if a material containing conductive nanowires is used as the material of the transparent electrode, the deformation performance of the capacitance type sensor may be improved, but the conduction stability and the ESD resistance may be lowered.

The present invention is intended to solve the above-mentioned conventional problems, and an object of the present invention is to provide a capacitance type sensor capable of suppressing deterioration of conduction stability and ESD resistance.

In order to solve the above problems, the capacitive sensor of the present invention is arranged side by side along the first direction in the detection region of the light-transmitting base material and one main surface of the base material. A plurality of first transparent electrodes containing translucent and conductive nanowires are arranged side by side along a second direction intersecting the first direction in the detection region, and have translucency and conductivity. A plurality of second transparent electrodes including nanowires and two adjacent first transparent electrodes are electrically connected to each other, and a first connecting portion containing an amorphous oxide material and two adjacent second transparent electrodes are connected to each other. It has a second connecting part that is electrically connected and contains an amorphous oxide material, and the first connecting part and the second connecting part do not intersect each other in a plan view viewed from a direction orthogonal to the main surface. The first connecting portion has a first connecting surface arranged on two adjacent first transparent electrodes, and the first connecting surface is electrically connected to each of the first transparent electrodes. The second connecting portion has a second connecting surface arranged on two adjacent second transparent electrodes, and the second connecting surface is electrically connected to each of the second transparent electrodes. It is characterized by that.

A first connecting surface is provided in the first connecting portion, a second connecting surface is provided in the second connecting portion, and each connecting surface (first connecting surface or second connecting surface) is a transparent electrode to be electrically connected. By disposing on the first transparent electrode and the second transparent electrode), the contact area between the first transparent electrode and the first connecting portion and the contact area between the second transparent electrode and the second connecting portion are widened. Can be done. This makes it possible to suppress a decrease in conduction stability and ESD resistance.
Further, since the first connecting portion and the second connecting portion are arranged so as not to intersect each other in a plan view, the manufacturing process can be simplified as compared with the configuration in which they intersect.

In the capacitance type sensor of the present invention, an insulating layer covering a part of the second transparent electrode is formed in the region where the first connecting portion is formed, and the two first transparent electrodes are electrically connected. The first connecting portion connected to is preferably arranged on an insulating layer on the second transparent electrode adjacent to the two first transparent electrodes.

As a result, since the first connecting portion is laid on the second transparent electrode with the insulating layer interposed therebetween, it becomes easy to take a large area of the first connecting portion in a plan view. Therefore, a wide contact area with the first transparent electrode can be secured, and the electric resistance value of the first connecting portion can be lowered. Therefore, it is possible to suppress a decrease in conduction stability and ESD resistance.

In the capacitive sensor of the present invention, the first connecting portion has a pattern extending along a direction intersecting the first direction on each of the two first transparent electrodes to be electrically connected. It is preferable to have.

As a result, since the first connecting portion has a pattern extending along the direction intersecting the first direction on the first transparent electrode, the first connecting portion is laid so as not to intersect the second connecting portion. 1 The pattern of the connecting portion can be shortened. Therefore, the electric resistance value of the first connecting portion can be lowered, and the deterioration of conduction stability and ESD resistance can be suppressed. Moreover, the contact area between the first connecting portion and the first transparent electrode can be widened, that is, the first connecting surface of the first connecting portion can be widened. Therefore, it is possible to suppress a decrease in conduction stability and ESD resistance.

In the capacitive sensor of the present invention, the first connecting portion has a pattern extending along the second direction on each of the two first transparent electrodes to be electrically connected, and has a pattern extending along the second direction. It is preferable to have a pattern extending along the first direction on each insulating layer on the two second transparent electrodes adjacent to the two first transparent electrodes.

As a result, it becomes easy to take a large area of the first connecting portion in a plan view, so that a wide contact area with the first transparent electrode can be secured and the electric resistance value of the first connecting portion can be lowered. .. Therefore, it is possible to suppress a decrease in conduction stability and ESD resistance.

In the capacitance type sensor of the present invention, the insulating layer is formed with a second through hole facing the second transparent electrode and penetrating the insulating layer vertically, and the second transparent electrode adjacent to each other is formed through the second through hole. Is electrically connected at the second connecting portion.

As a result, the adjacent second transparent electrodes are electrically connected at the second connecting portion via the second through hole provided in the insulating layer, so that the first transparent electrode adjacent to the second transparent electrode can be connected. Regardless of the pattern shape, adjacent second transparent electrodes can be easily connected at the second connecting portion.

In the capacitance type sensor of the present invention, the insulating layer covers a part of the first transparent electrode in a plan view, and the insulating layer faces the first transparent electrode and penetrates the insulating layer vertically. It is preferable that one through hole is formed and the adjacent first transparent electrodes are electrically connected at the first connecting portion via the first through hole.

As a result, the insulating layer is provided with the first through hole in addition to the second through hole, and the first connecting portion and the second connecting portion are arranged on the uniform insulating layer, so that the pattern shape is restricted. This reduces the amount, which makes it possible to suppress a decrease in conduction stability and ESD resistance. Further, since it is arranged on the insulating layer which is a substantially flat surface, the pattern of the connecting portion can be formed with high accuracy.

In the capacitive sensor of the present invention, a pattern layer containing an amorphous oxide-based material on the first transparent electrode and the second transparent electrode in a region excluding the first connecting portion and the second connecting portion in a plan view. Is preferably arranged.

As a result, a transparent electrode (first transparent electrode and second transparent electrode) with a pattern layer having the same material (amorphous oxide-based material) as the connecting portion (first connecting portion and second connecting portion) and having the same appearance (reflection). Since the transparent electrode) is covered, it is possible to make it difficult to see the connecting portion.

In the capacitive sensor of the present invention, it is preferable that the pattern layer is electrically connected to one of the first connecting portion and the second connecting portion and is insulated from the other.

According to this configuration, by electrically connecting the pattern layer to one of the connecting portions, the contact area between the connecting portion and the transparent electrode on which the pattern layer is arranged can be substantially widened. Therefore, it is possible to suppress a decrease in conduction stability and ESD resistance.

In the capacitance type sensor of the present invention, a first lead wire electrically connected to a plurality of first transparent electrodes connected by a plurality of first connecting portions, and a plurality of connected portions connected by a plurality of second connecting portions. A first resistance setting including an amorphous oxide-based material between the first transparent electrode and the first lead-out wiring having the second transparent electrode and the second lead-out wiring electrically connected to each other and adjacent to each other. It is preferable that a second resistance setting portion containing an amorphous oxide-based material is formed between the second transparent electrode and the second lead-out wiring that are adjacent to each other.

As a result, since the first resistance setting unit and the second resistance setting unit are provided, the pattern area and shape of the first resistance setting unit and the second resistance setting unit can be changed to change the pattern area and shape of the first resistance setting unit and the first resistance setting unit along the first direction. The resistance of the group of transparent electrodes and the resistance of the group of second transparent electrodes along the second direction can be aligned. Therefore, it is possible to prevent the current from concentrating in one place, and it is possible to suppress a decrease in ESD resistance.

In the capacitive sensor of the present invention, the conductive nanowire is preferably at least one selected from the group consisting of gold nanowires, silver nanowires, and copper nanowires.

As a result, the deformation performance of the capacitance type sensor can be improved and the resistance at the time of bending increases as compared with the case where an oxide-based material such as ITO is used as the material of the transparent electrode. It can be suppressed more.

In the capacitive sensor of the present invention, the amorphous oxide material is preferably at least one selected from the group consisting of amorphous ITO, amorphous IZO, amorphous GZO, amorphous AZO, and amorphous FTO.

As a result, the deformation performance of the capacitance type sensor can be improved and the resistance at the time of bending can be suppressed from increasing as compared with the case where, for example, crystalline ITO is used as the material of the bridge wiring portion. Can be done. Further, the invisibility of the bridge wiring portion can be further enhanced as compared with the case where, for example, conductive nanowires are used as the material of the bridge wiring portion.

According to the present invention, it is possible to provide a capacitance type sensor capable of suppressing a decrease in conduction stability and ESD resistance.

It is a top view which enlarges and shows a part of the detection area of the capacitance type sensor which concerns on embodiment of this invention. (A) is a plan view showing the arrangement of transparent electrodes in the region A1 of FIG. 1, and (b) is a plan view showing a state in which an insulating layer is provided in the region shown in FIG. 2 (a). (A) is a plan view showing a state in which the second connecting portion is further provided in the region shown in FIG. 2 (b), and (b) is a state in which the first connecting portion is provided in the region shown in FIG. 3 (a). It is a plan view which shows. (A) is a cross-sectional view taken along the line 4A-4A'of FIG. 3 (b), and (b) is a cross-sectional view taken along the line 4B-4B'of FIG. 3 (b). It is a top view which enlarges and shows the detection area in 1st modification. Is an enlarged plan view showing the arrangement of the transparent electrode and the insulating layer in the detection region of the second modification. (A) is a plan view showing a state in which a second connecting portion is further provided in the region shown in FIG. 6, and (b) is a plan view showing a state in which a first connecting portion is provided in the region shown in FIG. 7 (a). Is. (A) is a cross-sectional view taken along the line 8A-8A'of FIG. 7 (b), and (b) is a cross-sectional view taken along the line 8B-8B'of FIG. 7 (b). (A) is a sectional view in the third modified example corresponding to the sectional view taken along the line 8A-8A'shown in FIG. 7 (b) of the second modified example, and (b) is shown in FIG. 7 (b) of the second modified example. It is sectional drawing in the 3rd modification corresponding to the sectional drawing in the 8B-8B'line shown.

Hereinafter, the capacitance type sensor according to the embodiment of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a configuration diagram showing a capacitance type sensor 10 according to the present embodiment, and is a plan view showing a part of the detection region 11 in an enlarged manner. In FIG. 1, the illustration of the first connecting portion 20 described later is omitted. 2 (a) is a plan view showing the arrangement of the transparent electrodes 13 and 14 in the region A1 of FIG. 1 (the portion where the first electrode connecting body 13C and the second electrode connecting body 14C described later intersect). FIG. 2B is a plan view showing a state in which the insulating layer 30 is provided in the region A1 shown in FIG. 2A. FIG. 3A is a plan view showing a state in which the second connecting portion 21 is further provided in the region A1 shown in FIG. 2B, and FIG. 3B is the first in the region A1 shown in FIG. 3A. It is a top view which shows the state which provided the connecting part 20 (hatched part). The transparent electrode 13 and the transparent electrode 14 shown in FIGS. 1 to 3 indicate a conductive region separated by sandwiching the insulating region 18. 4 (a) is a cross-sectional view taken along the line 4A-4A'of FIG. 3 (b), and FIG. 4 (b) is a cross-sectional view taken along the line 4B-4B'of FIG. 3 (b).

Further, in each figure, XYZ coordinates are shown as reference coordinates. The Z1-Z2 direction is a direction perpendicular to the plane including the X1-X2 direction and the Y1-Y2 direction, and the Z1 side may be referred to as an upper side and the Z2 side may be referred to as a lower side. In the following description, the Y1-Y2 direction is referred to as the first direction, and the X1-X2 direction intersecting with each other so as to be orthogonal to the Y1-Y2 direction is referred to as the second direction. It can be changed arbitrarily. Further, a state in which the Z1 side is viewed from the Z2 side along the Z1-Z2 direction may be referred to as a plan view.

Further, in the following description, "transparent" and "translucent" refer to a state in which the visible light transmittance is 50% or more (preferably 80% or more). Further, the haze value is preferably 6% or less. As used herein, the terms "light-shielding" and "light-shielding property" refer to a state in which the visible light transmittance is less than 50% (preferably less than 20%).

First, the configuration of the capacitance type sensor 10 according to the present embodiment will be described.
As shown in FIGS. 1 or 4 (a) and 4 (b), the capacitance type sensor 10 includes a base material 12, a first transparent electrode 13, a second transparent electrode 14, and a first connecting portion 20. , A second connecting portion 21 is provided. As shown in FIGS. 4A and 4B, the first transparent electrode 13 and the second transparent electrode 14 are formed on the surface 12a (main surface) of the base material 12. As shown in FIG. 1, in the detection region 11 of the base material 12, a plurality of first transparent electrodes 13 are arranged along the Y1-Y2 direction as the first direction, and the second transparent electrode 14 is used as the second direction. A plurality of them are arranged along the X1-X2 direction of. In this way, since the first transparent electrode 13 and the second transparent electrode 14 are provided on the same surface (the surface 12a of the base material 12), the capacitance type sensor 10 can be made thinner.

As shown in FIG. 1, the capacitance type sensor 10 is arranged in the detection region 11 in which the first transparent electrode 13 and the second transparent electrode 14 are arranged and outside the detection region 11 when viewed from the Z1 side in the Z1-Z2 direction. The non-detection region 17 is provided. The detection area 11 is an area that can be operated by an operating body such as a finger, and the non-detection area 17 is a frame-shaped area located outside the detection area 11.

As shown in FIG. 1, the first transparent electrodes 13 are formed in a rectangular shape in a plan view, and a plurality of the first transparent electrodes 13 are arranged side by side along the Y1-Y2 direction and the X1-X2 direction. Then, two first transparent electrodes 13 adjacent to each other in the Y1-Y2 direction are electrically connected to each other via the first connecting portion 20 (see FIG. 3B), and the first electrode connecting body 13C is connected. It is configured. A plurality of the first electrode connectors 13C are arranged at intervals in the X1-X2 direction with the insulating region 18 interposed therebetween.

As shown in FIG. 1, the second transparent electrodes 14 are formed in a rectangular shape in a plan view, and a plurality of the second transparent electrodes 14 are arranged side by side along the X1-X2 direction and the Y1-Y2 direction. Then, two second transparent electrodes 14 adjacent to each other in the X1-X2 direction are electrically connected to each other via the second connecting portion 21 (see FIG. 3A), and the second electrode connecting body 14C is connected. It is configured. A plurality of the second electrode connectors 14C are arranged at intervals in the Y1-Y2 direction with the insulating region 18 interposed therebetween. By forming the first transparent electrode 13 and the second transparent electrode 14 into a so-called diamond-shaped pattern in this way, the electrodes for detecting the capacitance can be efficiently arranged on the same plane.

As shown in FIG. 2B, in the region where the two first transparent electrodes 13 and the two second transparent electrodes 14 are adjacent to each other, the first in a plan view seen from the Z1 side along the Z1-Z2 direction is the first. An insulating layer 30 is provided to cover a part of the transparent electrode 13 and a part of the second transparent electrode 14. The insulating layer 30 has a rectangular frame-shaped pattern in a plan view in which four patterns 30a, 30b, 30c, and 30d are connected in this order.

The first pattern 30a is along the X1-X2 direction so as to cover the Y2 side end portion 13a (FIG. 2A) of the first transparent electrode 13 on the Y1 side of the two adjacent first transparent electrodes 13. Extend. The second pattern 30b extends from the X1 side end of the first pattern 30a along the Y1-Y2 direction, and is the X2 side of the second transparent electrode 14 on the X1 side of the two adjacent second transparent electrodes 14. It is formed so as to expose the end portion 14a (FIG. 2A). The third pattern 30c extends from the Y2 side end of the second pattern 30b along the X1-X2 direction and covers the Y1 side end 13b (FIG. 2A) of the first transparent electrode 13 on the Y2 side. It is formed. The fourth pattern 30d connects the X2 side end portion of the first pattern 30a and the third pattern 30c and extends along the Y1-Y2 direction so as to expose the X1 side end portion 14b of the second transparent electrode 14 on the X2 side. Is formed in. Since the insulating layer 30 has the four patterns 30a, 30b, 30c, and 30d, the opposing ends 13a and 13b of the two adjacent first transparent electrodes 13 in the Y1-Y2 direction are covered with the insulating layer 30. In addition, the opposing ends 14a and 14b of the two adjacent second transparent electrodes 14 in the X1-X2 direction are exposed. Further, as shown in FIG. 2B, the insulating layer 30 is formed as a rectangular frame-shaped pattern having a rectangular opening 30s in the center in a plan view.

As shown in FIG. 3A, a second connecting portion 21 is formed in the opening 30s (see FIG. 2B) of the insulating layer 30 so as not to overlap the insulating layer 30 in a plan view. The second connecting portion 21 extends in the X1-X2 direction to form a rectangular shape in a plan view, and the second connecting surface 21a, which is the lower surface of both end portions in the longitudinal direction thereof, is formed by two adjacent second transparent electrodes 14. It is arranged on each (Fig. 4 (b)). As a result, the two adjacent second transparent electrodes 14 are electrically connected via the second connecting portion 21. Here, as shown in FIGS. 3B and 4A, since the second connecting portion 21 is arranged in the opening 30s of the insulating layer 30, the two first transparent electrodes 13 facing each other Not in contact with either.

As shown in FIG. 3B, the first connecting portion 20 is formed on the insulating layer 30 with patterns along the four patterns 30a, 30b, 30c, and 30d. Further, as shown in FIGS. 3B and 4A, the first connecting portion 20 on the first pattern 30a on the Y1 side of the insulating layer 30 is a first transparent electrode on the Y1 side from the central portion thereof. It is formed so as to extend above 13, whereby the first transparent electrode 13 on the Y1 side and the first connecting portion 20 are electrically connected. Further, the first connecting portion 20 on the third pattern 30c on the Y2 side of the insulating layer 30 is formed so as to extend from the central portion thereof to the first transparent electrode 13 on the Y2 side, whereby the Y2 side is formed. The first transparent electrode 13 and the first connecting portion 20 of the above are electrically connected. In other words, as shown in FIG. 4A, the lower surfaces of the Y1 side end portion and the Y2 side end portion of the first connecting portion 20 are adjacent to each other in the Y1-Y2 direction as the first connecting surface 20a. The two first transparent electrodes 13 are in contact with each other.

On the other hand, the first connecting portion 20 on the second pattern 30b on the X1 side of the insulating layer 30 and on the fourth pattern 30d on the X2 side does not extend to the second transparent electrode 14, but only on the insulating layer 30. Since it is arranged, it is not connected to two adjacent second transparent electrodes 14.
With the above arrangement, two first transparent electrodes 13 adjacent to each other in the Y1-Y2 direction are electrically connected via the first connecting portion 20. Further, the first connecting portion 20 and the second connecting portion 21 formed in the opening 30s of the insulating layer 30 are arranged so as not to intersect each other in a plan view, and are in a state of being electrically insulated from each other. It has become.

Next, each component will be described.
The base material 12 has translucency and is formed of a film-like transparent base material such as polyethylene terephthalate (PET) or a glass base material such as borosilicate glass. When a film-shaped transparent base material is used, it is possible to easily make the shape of the capacitance type sensor 10 a curved surface or make the capacitance type sensor 10 bendable. Further, as shown in FIGS. 4A and 4B, the Z1 side of the one surface 12a of the base material 12, that is, the main surface of the base material 12 whose normal direction is the direction along the Z1-Z2 direction. A first transparent electrode 13 and a second transparent electrode 14 are provided on the main surface located at. The first transparent electrode 13 and the second transparent electrode 14 are separated from each other with an insulating region 18 interposed therebetween, and are arranged in an electrically insulated state.

The first transparent electrode 13 and the second transparent electrode 14 are made of a material having translucency and containing conductive nanowires. As the conductive nanowire, at least one selected from the group consisting of metal nanowires, gold nanowires, silver nanowires, and copper nanowires is used. By using a material containing conductive nanowires, it is possible to achieve high translucency and low electrical resistance. Further, by using a material containing conductive nanowires, the deformation performance of the capacitance type sensor 10 can be improved.

The material containing the conductive nanowires has the conductive nanowires and a transparent resin layer. The conductive nanowires are dispersed in the resin layer. The dispersibility of the conductive nanowires is ensured by the resin layer. Examples of the material of the transparent resin layer include polyester resin, acrylic resin, and polyurethane resin. By contacting the plurality of conductive nanowires with each other at least in part, the in-plane conductivity of the material containing the conductive nanowires is maintained.

The insulating region 18 in which the first transparent electrode 13 and the second transparent electrode 14 are electrically insulated is formed by removing the conductive nanowires in the transparent resin layer by etching.
Here, an example of a method for producing the insulating region 18 when silver nanowires are used as the conductive nanowires will be briefly described. First, the portion other than the portion to be the insulating region 18 is covered with an etching resist, and the silver nanowire in the insulating region 18 is made into a silver iodide with an iodine iodide salt solution (for example, a potassium iodide solution). Next, this silver iodide is removed by etching with a thiosulfate solution (for example, a sodium thiosulfate solution). Finally, the etching resist is removed using a resist stripping solution. In this way, a region having extremely few silver nanowires in the transparent resin layer is formed, and the conductivity of this portion is lost to become the insulating region 18. Depending on the etching conditions, an insulating region 18 having no silver nanowires in the transparent resin layer can be produced.

The first connecting portion 20 and the second connecting portion 21 are translucent and are formed of a material containing an amorphous oxide-based material. Amorphous oxide-based materials include amorphous ITO (Indium Tin Oxide), amorphous IZO (Indium Zinc Oxide), amorphous GZO (Gallium-doped Zinc Oxide), amorphous AZO (Aluminum-topped Zinc Oxide), and amorphous FTO (FTO). At least one selected from the group consisting of Zinc Oxide) is used.

As the insulating layer 30, for example, a novolak resin (resist) is used.

As shown in FIG. 1, in the non-detection region 17, a plurality of first connection end portions 15 connected to each first electrode connecting body 13C and a first lead-out wiring drawn from the first connection end portion 15 are provided. 151, a plurality of second connection end portions 16 connected to each second electrode connecting body 14C, and a second lead-out wiring 161 drawn from the second connection end portion 16 are formed. These lead-out wirings 151 and 161 are simply shown in FIG. As described below, the first electrode connecting body 13C is electrically connected to the first lead wiring 151 via the two connecting regions 15a and 15b, the third connecting portion 22, and the first connecting end portion 15. , The second electrode connecting body 14C is electrically connected to the second lead-out wiring 161 via the two connecting regions 16a and 16b, the fourth connecting portion 23, and the second connecting end portion 16.

The connection ends 15, 16 and the lead wirings 151, 161 are formed of a material having a metal such as Cu, Cu alloy, CuNi alloy, Ni, Ag, and Au. The lead wires 151 and 161 are electrically connected to a flexible printed circuit board (not shown).

Each connection region 15a, 15b, 16a, 16b is formed of a transparent conductive material such as ITO or conductive nanowires. The third connecting portion 22 and the fourth connecting portion 23 are formed of a material containing an amorphous oxide-based material.

The connection regions 15a are an insulating region 18 in which the first transparent electrode 13 and the second transparent electrode 14 are insulated from each other, and two connecting regions 15a extending from the insulating region 18 toward the first lead wiring 151 side along the Y1-Y2 direction. It is formed into a substantially pentagonal shape in a plan view by being surrounded by the first insulating region 18a of the above and the second insulating region 18b extending along the X1-X2 direction in the non-detection region 17 on the first lead-out wiring 151 side. On the Y2 side of the connection region 15a, a connection region 15b electrically separated from the connection region 15a by a second insulation region 18b is provided. The area of the connection region 15a can be changed by adjusting the length of the two first insulating regions 18a facing each other in the Y1-Y2 direction and the positions of the second insulating regions 18b in the Y1-Y2 direction. , The resistance value corresponding to the first electrode connector 13C can be adjusted.

The connection region 16a includes an insulation region 18, two first insulation regions 19a extending from the insulation region 18 toward the second lead-out wiring 161 side in the X1-X2 direction, and a non-detection region on the second lead-out wiring 161 side. In 17, it is formed into a substantially pentagonal shape in a plan view by being surrounded by a second insulating region 19b extending along the Y1-Y2 direction. On the X1 side of the connection region 16a, a connection region 16b electrically separated from the connection region 16a by a second insulation region 19b is provided. The area of the connection region 16a can be changed by adjusting the length of the two first insulating regions 19a facing each other in the X1-X2 direction and the position of the second insulating region 19b in the X1-X2 direction. , The resistance value can be adjusted to correspond to the second electrode connector 14C.

The third connecting portion 22 extends in the Y1-Y2 direction to form a rectangular shape in a plan view, and the lower surfaces of both end portions in the longitudinal direction thereof are arranged on two adjacent connecting regions 15a and 15b, respectively. .. As a result, the two adjacent connection regions 15a and 15b are electrically connected to each other via the third connecting portion 22. Therefore, each of the first electrode connecting bodies 13C is electrically connected to the first lead-out wiring 151 via the two connecting regions 15a and 15b corresponding to each and the third connecting portion 22. The third connecting portion 22 may be made of the same material as the first connecting portion 20 and the second connecting portion 21, which will be described later. In this case, the third connecting portion 22 can be formed at the same time by the same process as the first connecting portion 20 and the second connecting portion 21. Further, by arbitrarily setting the shape size of the third connecting portion 22, the resistance value of the wiring corresponding to the first electrode connecting body 13C can be arbitrarily adjusted.

The fourth connecting portion 23 extends in the X1-X2 direction to form a rectangular shape in a plan view, and the lower surfaces of both end portions in the longitudinal direction thereof are arranged on two adjacent connecting regions 16a and 16b, respectively. .. As a result, the two adjacent connection regions 16a and 16b are electrically connected to each other via the fourth connecting portion 23. Therefore, each of the second electrode connecting bodies 14C is electrically connected to the second lead-out wiring 161 via the two connecting regions 16a and 16b corresponding to each and the fourth connecting portion 23. The fourth connecting portion 23 may be made of the same material as the first connecting portion 20 and the second connecting portion 21, which will be described later. In this case, the fourth connecting portion 23 can be formed at the same time by the same process as the first connecting portion 20 and the second connecting portion 21. Further, by arbitrarily setting the shape size of the fourth connecting portion 23, the resistance value of the wiring corresponding to the second electrode connecting body 14C can be arbitrarily adjusted.

In the capacitance type sensor 10, when a finger is brought into contact with the operating body from the Z1 side as an example of the operating body, the finger and the first transparent electrode 13 close to the finger and the second transparent electrode 14 close to the finger are used. Capacitance is generated between and. The capacitance type sensor 10 can calculate the contact position of the finger based on the change in capacitance at this time. The capacitance type sensor 10 detects the X coordinate (coordinates in the X1-X2 direction) of the position of the finger based on the change in capacitance between the finger and the first electrode connector 13C, and the finger and the second electrode. The Y coordinate (coordinates in the Y1-Y2 direction) of the finger position is detected based on the change in capacitance with the connector 14C (self-capacitance detection type).

The capacitance type sensor 10 may be a mutual capacitance detection type. That is, the capacitance type sensor 10 applies a driving voltage to one row of electrodes of either the first electrode connecting body 13C or the second electrode connecting body 14C, and applies a driving voltage to the first electrode connecting body 13C and the second electrode connecting body 14C. The change in capacitance between the other electrode of 14C and the finger may be detected. As a result, the capacitance type sensor 10 detects the Y coordinate of the finger position by the other electrode and the X coordinate of the finger position by one electrode.

Here, in general, when the transparent electrode is formed of a material containing conductive nanowires, the contact area between the transparent electrode and the bridge wiring portion may be relatively narrow. That is, the conductive nanowires ensure conductivity with the bridge wiring portion by the conductive wires exposed on the surface of the transparent electrode. Therefore, when the material of the bridge wiring portion is a material containing conductive nanowires, the contact between the transparent electrode and the bridge wiring portion is a point contact between the wires. Alternatively, when the material of the bridge wiring portion is an oxide-based material such as ITO, the contact between the transparent electrode and the bridge wiring portion is a contact between a wire wire or a point and a surface. As a result, when a material containing conductive nanowires is used as the material of the transparent electrode, the contact area between the transparent electrode and the bridge wiring portion may be relatively narrow, which may reduce the conduction stability. Further, when electrostatic discharge (ESD; Electrostatic Discharge) occurs and a large current flows to the contact portion between the transparent electrode and the bridge wiring portion, the contact portion may locally generate heat and melt. That is, when a material containing conductive nanowires is used as the material of the transparent electrode, the deformation performance of the capacitance type sensor is improved, but the conduction stability and the ESD resistance may be lowered. Further, if a crystalline oxide-based material or metal-based material is used as the material of the bridge wiring portion, the resistance at the time of bending may increase or the bridge wiring portion may be broken.

On the other hand, in the capacitance type sensor 10 according to the present embodiment, the first connecting portion 20 and the second connecting portion 21 are arranged so as not to intersect each other in a plan view, and the first connecting portion 20 is first. A connection surface 20a is provided, a second connection surface 21a is provided on the second connection portion 21, and each connection surface is placed on a transparent electrode (first transparent electrode 13, second transparent electrode 14) to be electrically connected, respectively. It is arranged. As a result, the contact area between the first transparent electrode 13 and the first connecting portion 20 and the contact area between the second transparent electrode 14 and the second connecting portion 21 can be widened, respectively, and the conduction stability and the ESD resistance are lowered. Can be suppressed. Further, since the first connecting portion 20 and the second connecting portion 21 are arranged so as not to intersect each other in a plan view, the manufacturing process can be simplified as compared with the configuration in which they intersect each other.

The first transparent electrode 13 and the second transparent electrode 14 include conductive nanowires, and the first connecting portion 20 and the second connecting portion 21 contain an amorphous oxide-based material. Therefore, the deformation performance of the capacitance type sensor 10 is improved as compared with the case where a crystalline oxide-based material or a metal-based material is used as the material of the first connecting portion 20 and the second connecting portion 21. At the same time, the adhesion between the first transparent electrode 13 and the first connecting portion 20 and the adhesion between the second transparent electrode 14 and the second connecting portion 21 can be ensured. In addition, it is possible to suppress an increase in resistance during bending.

When the conductive nanowire is at least one selected from the group consisting of gold nanowires, silver nanowires, and copper nanowires which are metal nanowires, the material of the first transparent electrode 13 and the second transparent electrode 14, such as ITO, is used. Compared with the case where the oxide-based material of No. 1 is used, the deformation performance of the capacitance type sensor 10 can be improved, and the increase in resistance at the time of bending can be further suppressed.

When the amorphous oxide material is at least one selected from the group consisting of amorphous ITO, amorphous IZO, amorphous GZO, amorphous AZO, and amorphous FTO, the materials of the first connecting portion 20 and the second connecting portion 21 are used. Compared with the case where, for example, crystalline ITO is used, the deformation performance of the capacitance type sensor 10 can be improved, and the increase in resistance at the time of bending can be suppressed. Further, the invisibility of the first connecting portion 20 and the second connecting portion 21 can be further enhanced as compared with the case where, for example, conductive nanowires are used as the materials of the first connecting portion 20 and the second connecting portion 21. ..

As shown in FIG. 4B, since the first connecting portion 20 is laid on the second transparent electrode 14 with the insulating layer 30 interposed therebetween, it becomes easy to take a large area of the first connecting portion 20 in a plan view. .. Therefore, a wide contact area with the first transparent electrode 13 can be secured, and the electric resistance value of the first connecting portion 20 can be lowered. Therefore, it is possible to suppress a decrease in conduction stability and ESD resistance.

Since the first connecting portion 20 has a pattern extending along the second direction intersecting the first direction on the first transparent electrode 13, it is laid so as not to intersect the second connecting portion 21. The pattern of the first connecting portion 20 can be shortened. Therefore, the electric resistance value of the first connecting portion 20 can be lowered, and the deterioration of conduction stability and ESD resistance can be suppressed. Moreover, since the contact area between the first connecting portion 20 and the first transparent electrode 13 can be widened, or the first connecting surface 20a of the first connecting portion 20 can be widened, conduction stability and ESD can be widened. It is possible to suppress the decrease in resistance.

By forming the insulating layer 30 into a rectangular frame-shaped pattern as shown in FIG. 3B, it becomes easy to take a large area of the first connecting portion 20 in a plan view, so that the contact area with the first transparent electrode 13 is widened. It can be secured and the electric resistance value of the first connecting portion 20 can be lowered. Therefore, it is possible to suppress a decrease in conduction stability and ESD resistance.

A modified example will be described below.
<First modification>
FIG. 5 is a plan view showing a first modification example in the region A1 described above in the above embodiment. In the above embodiment, as shown in FIG. 3B, the first connecting portion 20 is formed in a substantially rectangular frame shape on the rectangular frame-shaped insulating layer 30 in a plan view, and two adjacent second transparent portions are transparent. It was arranged to pass over both of the electrodes 14. Instead, as shown in FIG. 5, the first connecting portion 120 of the first modification is not formed on the insulating layer 30 on the X1 side, but is formed only on the insulating layer 30 on the X2 side. It is arranged so as to pass only on the X2 side of the two adjacent second transparent electrodes 14. Also in this case, similarly to the first connecting portion 20 of the above embodiment, the first connecting portion 120 on the first pattern 30a on the Y1 side of the insulating layer 30 is the first transparent electrode 13 on the Y1 side from the central portion thereof. It is formed so as to extend to the top, whereby the first transparent electrode 13 on the Y1 side and the first connecting portion 120 are electrically connected. Further, the first connecting portion 120 on the third pattern 30c on the Y2 side of the insulating layer 30 is formed so as to extend from the central portion thereof to the first transparent electrode 13 on the Y2 side, whereby the Y2 side is formed. The first transparent electrode 13 and the first connecting portion 120 of the above are electrically connected. As a result, the lower surfaces (first connection surfaces) of the Y1 side end portion and the Y2 side end portion of the first connecting portion 120 come into contact with the two adjacent first transparent electrodes 13 in the Y1-Y2 direction, respectively.

Here, the "first connecting portion" is a second connecting portion orthogonal to the first direction (Y1-Y2 direction), such as the first connecting portion 20 of the above embodiment and the first connecting portion 120 of the first modification. It is preferable that the first transparent electrode 13 extends along the direction (X1-X2 direction) on each of the two first transparent electrodes 13 to be electrically connected, but if the direction intersects the first direction, the first direction It may be in a direction that is not orthogonal to. Further, on the second transparent electrode 14, it is preferable to extend along the first direction like the first connecting portion 20 of the above embodiment and the first connecting portion 120 of the first modification, but the second direction and It may be formed so as to extend in a direction that does not match.

In this way, the first connecting portion extends along the direction intersecting the first direction on each of the two first transparent electrodes 13 to be electrically connected to the second connecting portion. The pattern of the first connecting portion laid so as not to intersect can be shortened. Therefore, the electric resistance value of the first connecting portion can be lowered, and the deterioration of conduction stability and ESD resistance can be suppressed. Moreover, the contact area between the first connecting portion and the first transparent electrode 13 can be widened, and the first connecting surface of the first connecting portion can be widened. Therefore, it is possible to suppress a decrease in conduction stability and ESD resistance.

<Second modification>
FIG. 6 is a second modification in the region A1 described above in the above embodiment, and is a plan view showing an enlarged arrangement of the transparent electrode and the insulating layer. 7 (a) is a plan view showing a state in which the second connecting portion is further provided in the region shown in FIG. 6, and FIG. 7 (b) is a state in which the first connecting portion is provided in the region shown in FIG. 7 (a). It is a top view which shows. 8 (a) is a cross-sectional view taken along the line 8A-8A'of FIG. 7 (b), and FIG. 8 (b) is a cross-sectional view taken along the line 8B-8B'of FIG. 7 (b).

In the second modification, as shown in FIGS. 6, 7 and 8 (b), through holes 231 and 232 (second through holes) penetrating the insulating layer 230 in the Z1-Z2 direction are formed. The two adjacent second transparent electrodes 14 are electrically connected to each other by the second connecting portion 221 via the through holes 231 and 232. Here, the surface of the lower surface of the second connecting portion 221 located above the through holes 231 and 232 is the second connecting surface, and the second connecting surface is located above the second transparent electrode 14. According to this configuration, regardless of the pattern shape of the two first transparent electrodes 13 adjacent to the two second transparent electrodes 14 to be electrically connected, the second transparent electrodes 14 adjacent to each other by the second connecting portion 221. Can be easily connected.

In the second modification, as shown in FIG. 6, in a plan view seen from the Z1 side along the Z1-Z2 direction with respect to the region where the two first transparent electrodes 13 and the two second transparent electrodes 14 are adjacent to each other. An insulating layer 230 is provided to cover a part of the first transparent electrode 13 and a part of the second transparent electrode 14. The insulating layer 230 has a rectangular shape in a plan view, and two through holes 231 and 232 are formed at positions corresponding to the two adjacent second transparent electrodes 14, respectively. The two through holes 231 and 232 are formed so as to penetrate the insulating layer 230 along the Z1-Z2 direction (FIG. 8 (b)).

As shown in FIG. 7A, a second connecting portion 221 having a rectangular shape in a plan view extending in the X1-X2 direction is formed on the insulating layer 230. The second connecting portion 221 extends to a position where both ends in the longitudinal direction cover the two through holes 231 and 232, respectively. With this configuration, the second transparent electrode 14 on the X1 side of the two adjacent second transparent electrodes 14 is electrically connected to the second connecting portion 221 via one through hole 231 and the second transparent electrode 14 on the X2 side. The electrodes 14 are electrically connected to the second connecting portion 221 via the other through hole 232, and by these connections, two adjacent second transparent electrodes 14 are electrically connected via the second connecting portion 221. Will be done.

Further, as shown in FIG. 7 (b), similarly to the first connecting portion 20 of the above embodiment, the first connecting portion 220 (hatched portion) is placed on the insulating layer 230 so as to surround the outside of the second connecting portion 221. ) Is formed. As shown in FIGS. 7B and 8A, the first connecting portion 220 on the first pattern 230a on the Y1 side of the insulating layer 230 is located on the first transparent electrode 13 on the Y1 side from the central portion thereof. The first transparent electrode 13 on the Y1 side and the first connecting portion 220 are electrically connected to each other. Further, the first connecting portion 220 on the third pattern 230c on the Y2 side of the insulating layer 230 is formed so as to extend from the central portion thereof to the first transparent electrode 13 on the Y2 side, whereby the Y2 side is formed. The first transparent electrode 13 and the first connecting portion 220 of the above are electrically connected. In other words, the lower surfaces of the Y1 side end portion and the Y2 side end portion of the first connecting portion 220 each come into contact with the two adjacent first transparent electrodes 13 as the first connecting surface 220a in the Y1-Y2 direction. (Fig. 8 (a)).

<Third modification example>
9 (a) is a cross-sectional view of the third modified example corresponding to the sectional view taken along the line 8A-8A'shown in FIG. 7 (b) of the second modified example, and FIG. 9 (b) is FIG. 7 of the second modified example. It is sectional drawing in the 3rd modification corresponding to the sectional drawing in line 8B-8B'shown in (b). That is, FIGS. 9A and 9B are cross-sectional views of positions corresponding to FIGS. 8A and 8B, respectively.

In the third modification, in addition to the through holes 231 and 232 (second through holes) of the second modification, through holes 341 and 342 (first through holes) penetrating the insulating layer 230 in the Z1-Z2 direction are provided. It is provided. Further, although the first connecting portion 320 is formed on the insulating layer 230 so as to surround the outside of the second connecting portion 221 of the first connecting portion 20 of the above embodiment and the first connecting portion of the first modification. Unlike 120 and the first connecting portion 220 of the second modification, it does not extend above the first transparent electrode 13 and is not connected to the first transparent electrode 13.

Through holes 341 and 342 are formed at positions corresponding to each of the two adjacent first transparent electrodes 13. Further, the through holes 341 and 342 are covered with the first connecting portion 320. With this configuration, the first transparent electrode 13 on the Y1 side of the two adjacent first transparent electrodes 13 is electrically connected to the first connecting portion 320 via one through hole 341, and the first transparent electrode 13 on the Y2 side is electrically connected. The electrode 13 is electrically connected to the first connecting portion 320 via the other through hole 342, and by these connections, two adjacent first transparent electrodes 13 are electrically connected via the first connecting portion 320. Will be done. Here, on the lower surface of the first connecting portion 320, the surface located on the through holes 341 and 342 becomes the first connecting surface, and this first connecting surface is located on the upper side of the first transparent electrode 13. Further, the insulating layer 230 is provided with through holes 341 and 342 (first through holes) in addition to the through holes 231 and 232 (second through holes), so that the first connecting portion 320 and the second connecting portion 221 are provided. Is arranged on the uniform insulating layer 230, so that restrictions on the pattern shape are reduced, and thus deterioration of conduction stability and ESD resistance can be suppressed. Further, since it is arranged on the insulating layer 230 which is a substantially flat surface, the patterns of the first connecting portion 320 and the second connecting portion 221 can be formed with high accuracy.

Other modifications will be described. Hereinafter, description will be made as a modification of the above embodiment, but the present invention can also be applied to the first to third modifications.

When a pattern layer containing an amorphous oxide-based material is arranged on the first transparent electrode 13 and the second transparent electrode 14 in a region excluding the first connecting portion 20 and the second connecting portion 21 in a plan view, the pattern layer is formed. It is preferable that the pattern layer has the same appearance or reflectivity as the first connecting portion 20 and the second connecting portion 21 so that the first connecting portion 20 and the second connecting portion 21 are hard to see. Further, when this pattern layer is electrically connected to one of the first connecting portion 20 and the second connecting portion 21 and insulated from the other connecting portion, the transparent electrode on which the pattern layer is arranged corresponds to this. The contact area with the connecting portion can be substantially widened, whereby the deterioration of conduction stability and ESD resistance can be suppressed.

Even on the connection regions 15a, 15b, 16a, and 16b, when a pattern layer containing an amorphous oxide material is arranged in a region other than the third connecting portion 22 and the fourth connecting portion 23, this pattern layer becomes the third connecting portion. It is preferable that the third connecting portion 22 and the fourth connecting portion 23 are hard to see because they have the same appearance or reflectivity as the portions 22 and the fourth connecting portion 23. Further, when this pattern layer is electrically connected to the third connecting portion 22 and the fourth connecting portion 23, respectively, the contact area between the connecting region in which the pattern layer is arranged and the corresponding connecting portion is substantially reduced. It can be widely used, and thus deterioration of conduction stability and ESD resistance can be suppressed. The pattern layer containing the amorphous oxide-based material may be provided between the connection region 15b and the first connection end portion 15 and between the connection region 16b and the second connection end portion 16.

A first resistance setting portion containing an amorphous oxide-based material is formed between the first transparent electrode 13 and the first lead-out wiring 151 adjacent to each other, and the second transparent electrode 14 and the second lead-out wiring 161 adjacent to each other are formed. It is preferable that a second resistance setting portion containing an amorphous oxide-based material is formed between the two. In this configuration, by changing the pattern area and shape of the first resistance setting unit and the second resistance setting unit, the resistance of the group of the first transparent electrodes 13 (first electrode connector 13C) along the first direction can be determined. The resistance of the group of the second transparent electrodes 14 (second electrode connector 14C) along the second direction can be aligned. Therefore, it is possible to prevent the current from concentrating in one place, and it is possible to suppress a decrease in ESD resistance.

Although the present invention has been described with reference to the above-described embodiment, the present invention is not limited to the above-described embodiment, and can be improved or modified within the purpose of improvement or the idea of the present invention.

As described above, the capacitance type sensor according to the present invention is useful in that it can suppress deterioration of conduction stability and ESD resistance.

10 Capacitive sensor 11 Detection area 12 Base material 12a Surface (main surface)
13 1st transparent electrode 13C 1st electrode connector 14 2nd transparent electrode 14C 2nd electrode connector 15 1st connection end 15a, 15b connection area 151 1st lead wiring 16 2nd connection end 16a, 16b connection area 161 2nd lead wiring 17 Non-detection area 18 Insulation area 18a, 19a 1st insulation area 18b, 19b 2nd insulation area 20 1st connection part 20a 1st connection surface 21 2nd connection part 21a 2nd connection surface 22 3rd connection part 23 4th connection part 30 Insulation layer 30a, 30b, 30c, 30d Pattern 30s Opening 120 1st connection part 220 1st connection part 220a 1st connection surface 221 2nd connection part 230 Insulation layer 230a, 230c pattern 231, 232 Through holes (2nd through hole)
320 1st connecting part 341, 342 Through hole (1st through hole)
A1 area

Claims (11)

With a translucent base material,
In the detection region of one main surface of the base material, a plurality of first transparent electrodes arranged side by side along the first direction, having translucency, and containing conductive nanowires,
In the detection region, a plurality of second transparent electrodes arranged side by side along a second direction intersecting the first direction, having translucency, and containing conductive nanowires.
The two adjacent first transparent electrodes are electrically connected to each other to form a first connecting portion containing an amorphous oxide-based material.
The two adjacent second transparent electrodes are electrically connected to each other and have a second connecting portion containing an amorphous oxide-based material.
The first connecting portion and the second connecting portion are arranged so as not to intersect each other in a plan view viewed from a direction orthogonal to the main surface.
The first connecting portion has a first connecting surface arranged on two adjacent first transparent electrodes, respectively.
The first connecting surface is electrically connected to each of the first transparent electrodes.
The second connecting portion has a second connecting surface arranged on two adjacent second transparent electrodes, and the second connecting surface is electrically connected to each of the second transparent electrodes. It is,
On the first transparent electrode and the second transparent electrode, a pattern layer containing an amorphous oxide-based material is arranged in a region other than the first connecting portion and the second connecting portion in the plan view. Capacitive sensor characterized by this . The capacitance type sensor according to claim 1 , wherein the pattern layer is electrically connected to one of the first connecting portion and the second connecting portion and is insulated from the other. In the region where the first connecting portion is formed, an insulating layer covering a part of the second transparent electrode is formed in the plan view.
The first connecting portion that electrically connects the two first transparent electrodes is arranged on the insulating layer on the second transparent electrode adjacent to the two first transparent electrodes. The capacitance type sensor according to claim 1 or 2. The insulating layer covers a part of the first transparent electrode in the plan view.
A first through hole is formed in the insulating layer so as to face the first transparent electrode and penetrate the insulating layer vertically.
The capacitance type sensor according to claim 3 , wherein the adjacent first transparent electrodes are electrically connected by the first connecting portion via the first through hole. The first connecting portion has a pattern extending along a direction intersecting the first direction on each of the two first transparent electrodes to be electrically connected. The capacitance type sensor according to claim 3 or 4. With a translucent base material,
In the detection region of one main surface of the base material, a plurality of first transparent electrodes arranged side by side along the first direction, having a translucent property, and having a structure in which conductive nanowires are dispersed in a resin. ,
In the detection region, a plurality of second transparent electrodes arranged side by side along a second direction intersecting the first direction, having a translucent property, and having a structure in which conductive nanowires are dispersed in a resin,
An insulating region located between the first transparent electrode and the second transparent electrode adjacent to each other in the in-plane direction of the main surface and insulating each other.
A first connecting portion that electrically connects two adjacent first transparent electrodes to each other, has translucency, and contains an amorphous oxide-based material, and
The two adjacent second transparent electrodes are electrically connected to each other, have a translucent property, and have a second connecting portion containing an amorphous oxide-based material.
The first connecting portion and the second connecting portion are arranged so as not to intersect each other in a plan view viewed from a direction orthogonal to the main surface.
The first connecting portion has a first connecting surface arranged on two adjacent first transparent electrodes, respectively.
The first connecting surface is electrically connected to each of the first transparent electrodes.
The second connecting portion has a second connecting surface arranged on two adjacent second transparent electrodes, and the second connecting surface is electrically connected to each of the second transparent electrodes. Being done
In the region where the first connecting portion is formed, an insulating layer covering a part of the second transparent electrode is formed in the plan view.
The first connecting portion that electrically connects the two first transparent electrodes is arranged on the insulating layer on the second transparent electrode adjacent to the two first transparent electrodes, and is electrically connected. On each of the two first transparent electrodes of interest, the pattern extends along a direction intersecting the first direction.
The first connecting surface has a pattern extending along a direction intersecting the first direction, and in the plan view, an end portion of the pattern of the first connecting surface in the direction intersecting the first direction is said. A capacitive sensor characterized by being placed adjacent to an insulated area. The first connecting portion has a pattern extending along the second direction on each of the two first transparent electrodes to be electrically connected, and the two first transparent electrodes. The static electricity according to claim 5 or 6 , wherein each of the insulating layers on the two second transparent electrodes adjacent to the electrodes has a pattern extending along the first direction. Capacitive sensor. A second through hole is formed in the insulating layer so as to face the second transparent electrode and penetrate the insulating layer vertically.
The method according to any one of claims 3 to 7, wherein the adjacent second transparent electrodes are electrically connected by the second connecting portion via the second through hole. Capacitive sensor. A first lead-out wiring electrically connected to a plurality of the first transparent electrodes connected by the plurality of first connecting portions,
It has a plurality of the second transparent electrodes connected by the plurality of the second connecting portions and a second lead-out wiring electrically connected to the second transparent electrodes.
A first resistance setting portion containing an amorphous oxide-based material is formed between the first transparent electrode and the first lead-out wiring adjacent to each other, and the first resistance setting portion is formed.
Any of claims 1 to 8, wherein a second resistance setting portion containing an amorphous oxide-based material is formed between the second transparent electrode and the second lead-out wiring that are adjacent to each other. The capacitance type sensor according to item 1. The capacitance according to any one of claims 1 to 9, wherein the conductive nanowire is at least one selected from the group consisting of gold nanowires, silver nanowires, and copper nanowires. Type sensor. Any one of claims 1 to 10, wherein the amorphous oxide-based material is at least one selected from the group consisting of amorphous ITO, amorphous IZO, amorphous GZO, amorphous AZO, and amorphous FTO. The capacitance type sensor according to item 1.

Images