TW201923538A - Capacitive sensor - Google Patents

Abstract

A capacitive sensor which comprises: a first linking part which electrically connects two adjacent first transparent electrodes to each other, and which contains an amorphous oxide material; and a second linking part which electrically connects two adjacent second transparent electrodes to each other, and which contains an amorphous oxide material. The first linking part and the second linking part are arranged so as not to intersect with each other when viewed in plan from the direction that is perpendicular to the main surface. The first linking part has first connection surfaces which are respectively provided on the two adjacent first transparent electrodes; and the first connection surfaces are electrically connected with the first transparent electrodes, respectively. The second linking part has second connection surfaces which are respectively provided on the two adjacent second transparent electrodes; and the second connection surfaces are electrically connected with the second transparent electrodes, respectively. Consequently, this capacitive sensor is capable of suppressing deterioration in conduction stability and ESD resistance.

Description

Electrostatic capacitance sensor

The present invention relates to an electrostatic capacitance type sensor, and more particularly to an electrostatic capacitance type sensor provided with a transparent electrode containing a conductive nanowire.

Patent Document 1 discloses a finger touch detection panel, which is an X electrode and a Y electrode on which a indium tin oxide (ITO) layer is formed on a transparent glass substrate. The finger touch detection panel described in Patent Document 1 is provided with a portion where the X electrode and the Y electrode cross each other. The Y electrode is electrically connected by a conductive film through an opening portion. In this way, by crossing the X electrodes and the Y electrodes on the substrate, and providing a bridge wiring portion for electrically connecting the Y electrodes, the detection panel can be made thin.

Here, for the market trend, it is expected that the shape of the electrostatic capacitance sensor is a curved surface, or it is configured to be able to bend the electrostatic capacitance sensor. Therefore, as a material of the transparent electrode of the electrostatic capacitance sensor, for example, metal nanowires (conductive nanowires) containing gold nanowires, silver nanowires, copper nanowires, and the like are used. Wire). [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 58-166437

[Problems to be Solved by the Invention]

If a material containing a conductive nanowire is used as the material of the transparent electrode, there will be a gap between the transparent electrode which is independent of each other and the bridge wiring portion provided at the crossing portion where the transparent electrodes are connected. The contact area becomes narrower. In other words, a transparent electrode containing a conductive nanowire material ensures the conductivity between itself and the bridge wiring material by the conductive nanowire exposed at the surface of the transparent electrode, and by itself and Gap between conductive nanowires to ensure transparency. Therefore, when the material of the bridge wiring part is a material containing a conductive nanowire, the contact between the transparent electrode and the bridge wiring part becomes a point contact between the wire and the wire. Alternatively, when the material of the bridge wiring portion is an oxide-based material such as ITO, the contact between the transparent electrode and the bridge wiring portion becomes a line or point between the conductive nanowire and the surface. contact. For this reason, if a material containing a conductive nanowire is used as the material of the transparent electrode, the contact area between the transparent electrode and the bridge wiring portion becomes relatively narrow. Therefore, there is a concern that the conduction stability may be reduced.

In addition, if an electrostatic discharge (ESD) occurs and a large current flows in a contact portion between the transparent electrode and the bridge wiring portion, the contact portion may locally generate heat and melt. That is, if a material containing a conductive nanowire is used as the material of the transparent electrode, although the deformation performance of the electrostatic capacitance sensor is improved, on the other hand, it will make the conduction stability and ESD There is a risk of reduced tolerance.

The present invention is to solve the above-mentioned problems of the prior art, and an object thereof is to provide an electrostatic capacitance type sensor capable of suppressing reductions in conduction stability and ESD resistance. [Means to solve the problem]

In order to solve the above-mentioned problems, the electrostatic capacity sensor of the present invention is characterized by comprising: a base material having translucency; and a plurality of first transparent electrodes on a main surface of one of the base materials. The detection area is arranged side by side along the first direction, is transparent, and contains conductive nanowires; and a plurality of second transparent electrodes are located at the detection area along the first direction. The second direction intersects with each other and is arranged side by side, which is translucent and contains conductive nanowires; and the first connection portion is used to electrically connect two adjacent first transparent electrodes to each other, And includes an amorphous oxide-based material; and a second connection portion that electrically connects two adjacent second transparent electrodes to each other, and includes an amorphous oxide-based material, a first connection portion and a second connection portion 2 The connecting portion is arranged so that it does not intersect with each other when viewed from a plane orthogonal to the main surface. The first connecting portion is provided with a separate arrangement. 1st connection surface on 2 adjacent 1st transparent electrodes, 1st connection It is electrically connected to each of the first transparent electrodes. At the second connection portion, it is provided with a second connection surface and a second connection surface which are respectively disposed on two adjacent second transparent electrodes. It is electrically connected to the respective second transparent electrodes.

The first connection surface is provided at the first connection portion, the second connection surface is provided at the second connection portion, and each connection surface (the first connection surface or the second connection surface) is disposed to be electrically conductive. The transparent electrodes (the first transparent electrode and the second transparent electrode) to be connected are capable of widening the contact area between the first transparent electrode and the first connection portion and the contact area between the second transparent electrode and the second connection portion, respectively. . This makes it possible to suppress the decrease in the conduction stability and the ESD resistance. In addition, since the first connection portion and the second connection portion are arranged so as not to cross each other in a plan view, the manufacturing process can be simplified as compared with the configuration in which these mutually intersect. .

In the electrostatic capacitance sensor of the present invention, it is preferable that the electrostatic sensor is configured such that, in a region where the first connection portion is formed, it is formed with insulation covering a part of the second transparent electrode in a plan view. Layer, the first connection portion electrically connecting the two first transparent electrodes is disposed on the insulating layer on the second transparent electrode adjacent to the two first transparent electrodes.

As a result, the first connection portion is laid on the second transparent electrode with the insulating layer sandwiched therebetween, so that it is easier to obtain a larger area of the first connection portion in a planar view. Therefore, it is possible to ensure a wide contact area with the first transparent electrode and to reduce the resistance value of the first connection portion. Therefore, it is possible to suppress the decrease in the conduction stability and the ESD resistance.

In the electrostatic capacitance type sensor of the present invention, it is preferable that the first connecting portion is provided on each of the two first transparent electrodes that are to be electrically connected, and is provided with A pattern extending in a direction crossing the first direction.

Accordingly, since the first connection portion is provided on the first transparent electrode and has a pattern extending in a direction crossing the first direction, the first connection portion can be formed so as not to intersect the second connection portion. The pattern of the first connection portion to be laid is shortened. Therefore, it is possible to reduce the resistance value of the first connection portion, and it is possible to suppress the decrease in the conduction stability and the ESD resistance. In addition, the contact area between the first connection portion and the first transparent electrode can be enlarged, that is, the first connection surface of the first connection portion can be enlarged. Therefore, it is possible to suppress the decrease in the conduction stability and the ESD resistance.

In the electrostatic capacitance type sensor of the present invention, it is preferable that the first connecting portion is provided on each of the two first transparent electrodes that are to be electrically connected, and is provided with The pattern extending in the second direction is provided on the insulating layer of each of the two second transparent electrodes adjacent to the two first transparent electrodes, and includes a pattern extending in the first direction. .

This makes it possible to obtain a larger area of the first connection portion in a planar view, so that the contact area with the first transparent electrode can be ensured to be wide, and the first connection can be made. The resistance value of the part decreases. Therefore, it is possible to suppress the decrease in the conduction stability and the ESD resistance.

In the electrostatic capacitance type sensor of the present invention, it is preferable that the structure is such that, at the insulating layer, a second through hole facing the second transparent electrode and penetrating the insulating layer above and below is formed through the second through hole. The hole and the adjacent second transparent electrode are electrically connected through the second connection portion.

As a result, since the adjacent second transparent electrode is electrically connected through the second connection portion through the second through hole provided in the insulating layer, the second transparent electrode is not adjacent to the second transparent electrode. The pattern shapes of the first transparent electrodes can easily connect adjacent second transparent electrodes through the second connection portion.

In the electrostatic capacitance sensor of the present invention, it is more desirable to be composed of: an insulating layer, which covers a part of the first transparent electrode in a planar view, and is formed at the insulating layer to face the first The transparent electrode passes through the first through hole of the insulating layer on the upper and lower sides, and the adjacent first transparent electrode is electrically connected through the first connecting portion through the first through hole.

Therefore, since the first through hole is provided in addition to the second through hole at the insulating layer, and the first connecting portion and the second connecting portion are arranged on the same insulating layer, Restrictions on the pattern shape are reduced, and by this, it is possible to suppress the decrease in the conduction stability and the ESD resistance. In addition, since it is arranged on the insulating layer that is slightly flat, it is possible to form the pattern of the connecting portion with good accuracy.

In the electrostatic capacitance type sensor of the present invention, it is preferable that the first and second transparent electrodes are structured in a planar view, and the first transparent electrode and the second transparent electrode are other than the first connection portion and the second connection portion. In the region, a pattern layer containing an amorphous oxide-based material is arranged.

Therefore, the transparent electrode is made of a pattern layer having the same material (amorphous oxide-based material) and the same appearance (reflective) as the connection portion (the first connection portion and the second connection portion). (The first transparent electrode and the second transparent electrode), so that the connection portion can be made difficult to be visually recognized.

In the electrostatic capacity sensor of the present invention, it is preferable that the pattern layer is configured as: a pattern layer which is electrically connected to one of the first connection portion and the second connection portion and is insulated from the other.

According to this configuration, by electrically connecting the pattern layer to one of the connection portions, the contact area between the connection portion and the transparent electrode in which the pattern layer is arranged can be substantially enlarged. This makes it possible to suppress the decrease in the conduction stability and the ESD resistance.

In the electrostatic capacity sensor of the present invention, it is preferable that the electrostatic sensor is configured to include: a first lead-out wiring; and a plurality of first transparent electrodes connected to each other by a plurality of first connecting portions. Electrical connection; and the second lead-out wiring are electrically connected to a plurality of second transparent electrodes connected by a plurality of second connecting portions, and the adjacent first transparent electrode and the first lead-out wiring are electrically connected. A first impedance setting section including an amorphous oxide-based material is formed, and a system including the amorphous oxide-based is formed between the adjacent second transparent electrode and the second lead-out wiring. The second impedance setting section of the material.

As a result, the first impedance setting section and the second impedance setting section are provided. Therefore, by changing the pattern areas and shapes of the first impedance setting section and the second impedance setting section, the first impedance setting section and the second impedance setting section can be changed. The impedance of the group of first transparent electrodes in the direction and the impedance of the group of second transparent electrodes in the second direction coincide with each other. Therefore, it is possible to avoid a situation in which a current is concentrated in a single place, and to suppress a reduction in ESD tolerance.

In the electrostatic capacitance type sensor of the present invention, it is preferable to be composed of: conductive nano wire, which is made of gold nano wire, silver nano wire, and copper nano wire. At least one selected from the group.

Therefore, compared with the case where an oxide-based material such as ITO is used as the material of the transparent electrode, the deformation performance of the electrostatic capacitance sensor can be improved, and the resistance of the sensor during bending can be further improved. Ascend to suppress.

In the electrostatic capacitance sensor of the present invention, it is preferable that the system is composed of: an amorphous oxide-based material, which is composed of amorphous ITO, amorphous IZO, amorphous GZO, and amorphous AZO. And at least one selected from the group consisting of amorphous FTO.

Therefore, compared with the case where crystalline ITO is used as the material of the bridge wiring portion, the deformation performance of the electrostatic capacitance sensor can be improved, and the increase in resistance during bending can be suppressed. In addition, the invisibility of the bridge wiring portion can be further improved compared to the case where a conductive nanowire is used as the material of the bridge wiring portion. [Effect of the invention]

According to the present invention, it is possible to provide an electrostatic capacitance type sensor capable of suppressing the decrease in the conduction stability and the ESD resistance.

Hereinafter, the electrostatic capacity sensor according to the embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a structural diagram showing an electrostatic capacitance sensor 10 according to an embodiment of the present invention, and is a plan view showing an enlarged display of a part of the detection area 11. In addition, in FIG. 1, the illustration of the 1st connection part 20 mentioned later is abbreviate | omitted. FIG. 2 (a) is a plan view showing the arrangement of the transparent electrodes 13 and 14 in the area A1 of FIG. 1 (the portion where the first electrode connecting body 13C and the second electrode connecting body 14C described later intersect). FIG. 2 (b) is a plan view showing a state where the insulating layer 30 is provided in the area A1 shown in FIG. 2 (a). FIG. 3 (a) is a plan view showing a state in which a second connection portion 21 is further provided in the area A1 shown in FIG. 2 (b), and FIG. 3 (b) is a view showing a state in which FIG. 3 (a) The illustrated area A1 is a plan view showing a state where the first connecting portion 20 (slanted portion) is provided. In addition, the transparent electrode 13 and the transparent electrode 14 shown in FIG. 1 to FIG. 3 represent conductive regions that are separated by sandwiching the insulating region 18. 4 (a) is a sectional view taken along the line 4A-4A 'in FIG. 3 (b), and (b) is a sectional view taken along the line 4B-4B' in FIG. 3 (b).

In each figure, X-Y-Z coordinates are indicated as reference coordinates. The Z1-Z2 direction is a direction perpendicular to a surface including the X1-X2 direction and the Y1-Y2 direction, and the Z1 side is called the upper side and the Z2 side is called the lower side. In the following description, the Y1-Y2 direction is referred to as the first direction, and the X1-X2 direction that intersects orthogonally to the Y1-Y2 direction is referred to as the second direction. However, it can be adapted to The specifications and the like of the electrostatic capacitance sensor are arbitrarily changed. In addition, there is a case where a state in which the Z2 side is viewed from the Z1 side along the Z1-Z2 direction is referred to as a plane observation.

In the following description, the terms "transparent" and "light-transmitting" refer to a state in which the visible light transmittance is 50% or more (preferably 80% or more). The haze value is preferably 6% or less. In the present specification, "light-shielding" and "light-shielding property" refer to a state in which the visible light transmittance is less than 50% (preferably less than 20%).

First, the configuration of the electrostatic capacitance type sensor 10 according to this embodiment will be described. The electrostatic capacitance type sensor 10 is, as shown in FIG. 1 or 4 (a) and (b), and includes a base material 12, a first transparent electrode 13, a second transparent electrode 14, and a first The connection portion 20 and the second connection portion 21. As shown in FIGS. 4 (a) and 4 (b), the first transparent electrode 13 and the second transparent electrode 14 are provided on the surface 12 a (main surface) of the substrate 12. As shown in FIG. 1, in the detection area 11 of the substrate 12, the first transparent electrode 13 is plurally arranged along the Y1-Y2 direction in which the work is the first direction, and the second transparent electrode 14 is along the The work is plurally arranged for the X1-X2 direction of the second direction. As described above, since the first transparent electrode 13 and the second transparent electrode 14 are provided on the same surface (the surface 12 a of the base material 12), it is possible to reduce the thickness of the capacitive sensor 10.

As shown in FIG. 1, when viewed from the Z1 side in the Z1-Z2 direction, the electrostatic capacitance type sensor 10 is provided with a first transparent electrode 13 and a second transparent electrode 14. The detection area 11 and the non-detection area 17 arranged on the outer side thereof. The detection area 11 is an area that can be operated by an operating body such as a finger, and the non-detection area 17 is a frame-shaped area located at the outer peripheral side of the detection area 11.

The first transparent electrode 13 is, as shown in FIG. 1, formed into a rectangular shape in a plan view, and is arranged in a plurality of side by side along the Y1-Y2 direction and the X1-X2 direction. The two adjacent first transparent electrodes 13 in the Y1-Y2 direction are electrically connected to each other through the first connection portion 20 (see FIG. 3 (b)), and constitute a first electrode connection. Body 13C. The first electrode connecting body 13C is arranged in a plurality of rows in the X1-X2 direction while sandwiching the insulating region 18 with a gap.

As shown in FIG. 1, the second transparent electrode 14 is formed in a rectangular shape when viewed in a plane, and is arranged in plural in parallel along the X1-X2 direction and the Y1-Y2 direction. In addition, two adjacent second transparent electrodes 14 in the X1-X2 direction are electrically connected to each other via a second connection portion 21 (refer to FIG. 3 (a)), and constitute a second electrode connection. Body 14C. The second electrode connecting body 14C is arranged in a plurality of rows in the Y1-Y2 direction while sandwiching the insulating region 18 with a gap. In this way, by setting the first transparent electrode 13 and the second transparent electrode 14 to a so-called diamond pattern, the electrodes for detecting the electrostatic capacitance can be arranged on the same plane with good efficiency.

As shown in FIG. 2 (b), the area adjacent to the two first transparent electrodes 13 and the two second transparent electrodes 14 was observed from the Z1 side along the Z1-Z2 direction. In plan view, an insulating layer 30 is provided to cover a part of the first transparent electrode 13 and a part of the second transparent electrode 14. This insulating layer 30 is provided with a rectangular frame-like pattern in plan view in which four patterns 30a, 30b, 30c, and 30d are sequentially connected.

The first pattern 30a is formed by covering the Y2 side end portion 13a (FIG. 2 (a)) of the first transparent electrode 13 on the Y1 side of two adjacent first transparent electrodes 13. X1-X2 direction. The second pattern 30b extends from the X1 side end of the first pattern 30a in the Y1-Y2 direction and X2 of the second transparent electrode 14 on the X1 side of the two adjacent second transparent electrodes 14 The side end portion 14a (FIG. 2 (a)) is formed so as to be exposed. The third pattern 30c extends from the Y2 side end portion of the second pattern 30b in the X1-X2 direction and covers the Y1 side end portion 13b (Fig. 2 (a)) of the first transparent electrode 13 on the Y2 side. Way while being formed. The fourth pattern 30d is formed by connecting the X2 side end portions of the first pattern 30a and the third pattern 30c and extending in the Y1-Y2 direction and exposing the X1 side end portion 14b of the second transparent electrode 14 on the X2 side. Way while being formed. By providing the insulating layer 30 with four patterns 30a, 30b, 30c, and 30d, mutually facing end portions 13a, 13b of the two first transparent electrodes 13 adjacent to each other in the Y1-Y2 direction are covered. The insulating layer 30 is covered and the ends 14a, 14b of the two transparent electrodes 14 adjacent to each other in the X1-X2 direction are exposed. Further, as shown in FIG. 2 (b), the insulating layer 30 is formed as a rectangular frame-like pattern provided with a rectangular opening 30s at the center in a plan view.

As shown in FIG. 3 (a), the second connection portion is formed in the opening 30s (refer to FIG. 2 (b)) of the insulating layer 30 so as not to overlap with the insulating layer 30 in a plan view. twenty one. The second connecting portion 21 extends in the X1-X2 direction and becomes rectangular when viewed in a plane. The second connecting surface 21a, which is the lower surface of both ends in the longitudinal direction, is arranged adjacent to each other. Above each of the two second transparent electrodes 14 (FIG. 4 (b)). As a result, the two adjacent second transparent electrodes 14 are electrically connected via the second connection portion 21. Here, as shown in FIG. 3 (b) and FIG. 4 (a), since the second connecting portion 21 is arranged in the opening 30s of the insulating layer 30, neither of the two connecting portions 21 is opposed to each other. Any one of the first transparent electrodes 13 is in contact.

As shown in FIG. 3 (b), the first connection portion 20 is formed on the insulating layer 30 with a pattern along the four patterns 30a, 30b, 30c, and 30d. Further, as shown in FIG. 3 (b) and FIG. 4 (a), the first connecting portion 20 on the first pattern 30a on the Y1 side of the insulating layer 30 extends from the central portion thereof to the Y1 side. The first transparent electrode 13 is formed on the ground. As a result, the first transparent electrode 13 on the Y1 side and the first connection portion 20 are electrically connected. In addition, the first connecting portion 20 on the third pattern 30c on the Y2 side of the insulating layer 30 is formed to extend from the central portion thereof to the first transparent electrode 13 on the Y2 side, whereby Y2 The first transparent electrode 13 on the side and the first connection portion 20 are electrically connected. In other words, as shown in FIG. 4 (a), the lower sides of each of the Y1 side end portion and the Y2 side end portion of the first connection portion 20 serve as the first connection surface 20a and are in the Y1-Y2 direction. The two adjacent first transparent electrodes 13 are in contact with each other.

On the other hand, the first connecting portion 20 on the second pattern 30b on the X1 side of the insulating layer 30 and on the fourth pattern 30d on the X2 side is only provided because it does not extend to the second transparent electrode 14. Since it is provided on the insulating layer 30, it is not connected to two adjacent second transparent electrodes 14. With the above arrangement, two first transparent electrodes 13 adjacent to each other in the Y1-Y2 direction are electrically connected through the first connection portion 20. In addition, the first connection portion 20 and the second connection portion 21 formed in the opening 30s of the insulating layer 30 are arranged so as not to cross each other in a plan view, and are electrically connected to each other. Sexual insulation.

Next, each constituent member will be described. The gadolinium base material 12 is formed of a transparent base material, such as polyethylene terephthalate (PET), or a glass base material such as borosilicate glass, which is translucent. When a thin film-shaped transparent substrate is used, the shape of the electrostatic capacitance type sensor 10 can be easily set as a curved surface, or the electrostatic capacitance type sensor 10 can be bent. Also, as shown in FIGS. 4 (a) and 4 (b), the surface 12a on one of the substrates 12, that is, the direction along the Z1-Z2 direction at the substrate 12 is normal. The main surface is located at the main surface on the Z1 side, and the first transparent electrode 13 and the second transparent electrode 14 are provided. The first transparent electrode 13 and the second transparent electrode 14 are separated from each other while sandwiching the insulating region 18, and are disposed in a state of being electrically insulated.

The first transparent electrode 13 and the second transparent electrode 14 are formed of a material containing a conductive nanowire, which is translucent. As the conductive nanowire, at least one selected from the group consisting of metal nanowire, gold nanowire, and copper nanowire is used. . By using a material containing a conductive nanowire, it is possible to achieve both high light transmission and low resistance. In addition, by using a material containing a conductive nanowire, the deformation performance of the electrostatic capacitance type sensor 10 can be improved.

The conductive nanowire-containing material includes a conductive nanowire and a transparent resin layer. The conductive nanowire is dispersed in a resin layer. The dispersibility of the conductive nanowire is ensured by the resin layer. Examples of the material of the transparent resin layer include polyester resins, acrylic resins, and polyurethane resins. By bringing the plurality of conductive nanowires into contact with each other at at least a part, the conductivity in the plane of the material containing the conductive nanowires is maintained.

The first transparent electrode 13 and the second transparent electrode 14 are formed as an insulating region 18 that is electrically insulated. The conductive nanowires in the transparent resin layer are formed by etching. Here, an example of a method of producing the insulating region 18 when a silver nanowire is used as the conductive nanowire will be briefly described. First, an area other than the part that becomes the insulating region 18 is covered with an anti-etching agent, and the silver nanowires of the insulating region 18 are made with an iodine-iodide salt solution (such as an iodine-potassium iodide solution). Silver iodide. Next, this silver iodide is removed by etching with a thiosulfate (for example, a sodium thiosulfate solution). Finally, the resist is removed using a resist stripping solution. In this way, the silver nanowires in the transparent resin layer are formed in extremely few areas, and the conductivity of this part disappears and becomes the insulating area 18. In addition, depending on the etching conditions, an insulating region 18 in which silver nanowires are not present in the transparent resin layer at all can be produced.

The first connection portion 20 and the second connection portion 21 are transparent and are formed of a material containing an amorphous oxide-based material. As the amorphous oxide-based material, amorphous ITO (Indium Tin Oxide), amorphous IZO (Indium Zinc Oxide), amorphous GZO (Gallium-doped Zinc Oxide), and amorphous AZO are used. (Aluminum-doped Zinc Oxide) and amorphous FTO (Fluorine-doped Zinc Oxide).

As the insulating layer 30, for example, a phenol resin (resistor) is used.

As shown in FIG. 1, in the non-detection area 17, a plurality of first connection end portions 15 connected to each of the first electrode connection bodies 13C are formed, and the first connection end portion 15 is derived from the first connection end portion 15. A first lead-out wiring 151, a plurality of second connection end portions 16 connected to each of the second electrode connecting bodies 14C, and a second lead-out wiring 161 derived from the second connection end portion 16. These lead wires 151 and 161 are briefly indicated in FIG. 1. As described below, the first electrode connection body 13C is electrically connected to the first lead-out wiring 151 via two connection areas 15a, 15b, the third connection body 22, and the first connection end portion 15, The second electrode connection body 14C is electrically connected to the second lead-out wiring 161 via the two connection areas 16a, 16b, the fourth connection body 23, and the second connection end portion 16.

Each of the connection end portions 15 and 16 and each of the lead-out wirings 151 and 161 are formed of a material including metals such as Cu, Cu alloy, CuNi alloy, Ni, Ag, and Au. The lead wires 151 and 161 are electrically connected to a flexible printed circuit board (not shown).

Each of the connection regions 15a, 15b, 16a, and 16b is formed of a transparent conductive material such as ITO or a conductive nanowire. The third connection portion 22 and the fourth connection portion 23 are formed of a material containing an amorphous oxide-based material.

The connection region 15a is the first lead-out wiring by "the insulating region 18 in which the first transparent electrode 13 and the second transparent electrode 14 are insulated from each other" and "from this insulating region 18 along the Y1-Y2 direction" The two first insulation regions 18a extending from the 151 side and the second insulation region 18b extending along the X1-X2 direction from the non-detection region 17 on the first lead-out wiring 151 side are formed as It is slightly pentagonal in plan view. At the Y2 side of this connection region 15a, a connection region 15b is provided which is electrically separated from the connection region 15a by the second insulation region 18b. At the connection region 15a, by adjusting the length in the Y1-Y2 direction of the two first insulating regions 18a facing each other, and adjusting the position of the second insulating region 18b in the Y1-Y2 direction, etc., it is possible to adjust By changing the area, the impedance value corresponding to the first electrode connecting body 13C can be adjusted.

The connection area 16a is the first insulation area 19a extending from the insulation area 18 and the two first insulation areas 19a extending along the X1-X2 direction toward the second lead-out wiring 161 side. The non-detection area 17 on the side of the lead-out wiring 161 is surrounded by the second insulating area 19b ″ extending along the Y1-Y2 direction, and is formed in a slightly pentagonal shape when viewed in plan. At the X1 side of this connection region 16a, a connection region 16b is provided which is electrically separated from the connection region 16a by the second insulation region 19b. At the connection region 16a, by adjusting the length in the X1-X2 direction of the first insulating region 19a and the position of the second insulating region 19b in the X1-X2 direction facing each other, it is possible to adjust By changing the area, the impedance value corresponding to the second electrode connecting body 14C can be adjusted.

The third connecting portion 22 extends in the Y1-Y2 direction and becomes rectangular when viewed in a plane. The lower sides of both ends in the long-side direction are arranged in two adjacent connecting areas 15a. Above 15b. Thereby, the two adjacent connection regions 15 a and 15 b are electrically connected to each other via the third connection portion 22. Therefore, each of the first electrode connection bodies 13C is electrically connected to the first lead-out wiring 151 via the two corresponding connection areas 15a, 15b and the third connection portion 22, respectively. The third connection portion 22 may be formed of the same material as the first connection portion 20 and the second connection portion 21 described later. In this case, the third connection portion 22 can be formed at the same time by a process common to the first connection portion 20 and the second connection portion 21. Furthermore, by arbitrarily setting the shape and size of the third connection portion 22, the impedance value of the wiring corresponding to the first electrode connection body 13C can be arbitrarily adjusted.

The fourth connecting portion 23 extends in the X1-X2 direction and becomes rectangular when viewed in a plane. The lower sides of both ends in the long-side direction are arranged in two adjacent connection areas 16a. Above 16b. As a result, the two adjacent connection regions 16 a and 16 b are electrically connected to each other via the fourth connection portion 23. Therefore, each of the second electrode connection bodies 14C is electrically connected to the second lead-out wiring 161 via the two corresponding connection areas 16a, 16b and the fourth connection portion 23, respectively. The fourth connection portion 23 may be formed of the same material as the first connection portion 20 and the second connection portion 21 described later. In this case, the fourth connection portion 23 can be formed simultaneously by a process common to the first connection portion 20 and the second connection portion 21. Furthermore, by arbitrarily setting the shape and size of the fourth connecting portion 23, the impedance value of the wiring corresponding to the second electrode connecting body 14C can be arbitrarily adjusted.

In the electrostatic capacitance type sensor 10, if the finger is brought into contact as an example of the operating body from the Z1 side, between the finger and the first transparent electrode 13 near the finger, and between the finger and the second transparent electrode 13 near the finger, An electrostatic capacitance is generated between the transparent electrodes 14. The electrostatic capacity sensor 10 can calculate the contact position of a finger based on the change in the electrostatic capacity at this time. The electrostatic capacitance type sensor 10 detects the X coordinate (the coordinate in the direction of X1-X2) of the position of the finger based on the change in the electrostatic capacitance between the finger and the first electrode connecting body 13C, and based on the finger The change in the electrostatic capacitance between the two-electrode coupling body 14C is used to detect the Y coordinate (coordinates in the Y1-Y2 direction) of the finger position (self-capacitance detection type).

In addition, the electrostatic capacitance type sensor 10 may be a mutual capacitance detection type. That is, the electrostatic capacity sensor 10 can also apply a driving voltage to a row of one of the first electrode connection body 13C and the second electrode connection body 14C, and detect the first electrode connection body. Changes in the electrostatic capacitance between the other electrode of the 13C and the second electrode connecting body 14C and the finger. As a result, the electrostatic capacity sensor 10 detects the Y coordinate of the position of the finger through the other electrode, and detects the X coordinate of the position of the finger through the one electrode.

Here, in general, when the transparent electrode is formed of a material containing a conductive nanowire, the contact area between the transparent electrode and the bridge wiring portion may become relatively narrow. That is, the conductive nanowires ensure the conductivity between the conductive nanowires and the bridge wiring material by the conductive nanowires exposed on the surface of the transparent electrode. Therefore, when the material of the bridge wiring part is a material containing a conductive nanowire, the contact between the transparent electrode and the bridge wiring part becomes a point contact between the wire and the wire. Alternatively, when the material of the bridge wiring portion is an oxide-based material such as ITO, the contact between the transparent electrode and the bridge wiring portion is a contact between a wire or a point and a surface. Therefore, if a material containing a conductive nanowire is used as the material of the transparent electrode, the contact area between the transparent electrode and the bridge wiring portion may become narrower. There may be cases where the conduction stability is reduced. In addition, if an electrostatic discharge (ESD) occurs and a large current flows in a contact portion between the transparent electrode and the bridge wiring portion, the contact portion may locally generate heat and blow. That is, if a material containing a conductive nanowire is used as the material of the transparent electrode, although the deformation performance of the electrostatic capacitance sensor is improved, on the other hand, it will make the conduction stability and ESD Case of reduced tolerance. In addition, if a crystalline oxide-based material or a metal-based material is used as the material of the bridge wiring portion, the resistance at the time of bending may be increased or the bridge wiring portion may be disconnected.

On the other hand, in the electrostatic capacitance type sensor 10 of this embodiment, the first connection portion 20 and the second connection portion 21 are arranged so as not to intersect with each other in a plan view, and are placed in the first place. A first connection surface 20a is provided at the connection portion 20, and a second connection surface 21a is provided at the second connection portion 21, and each connection surface is disposed on a transparent electrode (first transparent electrode) that is the object of electrical connection. 13. The second transparent electrode 14). As a result, the contact area of the first transparent electrode 13 and the first connection portion 20 and the contact area of the second transparent electrode 14 and the second connection portion 21 can be expanded, respectively, and they can be resistant to continuity and ESD. The reduction is suppressed. In addition, since the first connecting portion 20 and the second connecting portion 21 are arranged so as not to cross each other in a planar view, the manufacturing process can be performed more than the configuration that intersects each other. Simplify.

The first transparent electrode 13 and the second transparent electrode 14 include a conductive nanowire, and the first connecting portion 20 and the second connecting portion 21 include an amorphous oxide-based material. Therefore, compared with the case where a crystalline oxide-based material or a metal-based material is used as the material of the first connection portion 20 and the second connection portion 21, the deformation performance of the electrostatic capacitance type sensor 10 can be improved. In addition, the adhesion between the first transparent electrode 13 and the first connection portion 20 and the adhesion between the second transparent electrode 14 and the second connection portion 21 can be secured. In addition, it is possible to suppress an increase in resistance during bending.

When the conductive nanowire is at least one selected from the group consisting of metal nanowires, gold nanowires, and copper nanowires, which is a metal nanowire, compared to the first In the case where an oxide-based material such as ITO is used as the material of the first transparent electrode 13 and the second transparent electrode 14, the deformation performance of the electrostatic capacitance sensor 10 can be improved, and the resistance during bending can be further improved. To suppress the rise.

When the amorphous oxide-based material is at least one selected from the group consisting of amorphous ITO, amorphous IZO, amorphous GZO, amorphous AZO, and amorphous FTO, Compared with the case where crystalline ITO is used as the material of the first connection portion 20 and the second connection portion 21, the deformation performance of the electrostatic capacitance sensor 10 can be improved, and the resistance to bending can be improved. To suppress the rise. In addition, compared with the case where conductive nanowires are used for the materials of the first connection portion 20 and the second connection portion 21, the invisibility of the first connection portion 20 and the second connection portion 21 can be further improved. Sex.

As shown in FIG. 4 (b), since the first connection portion 20 is laid on the second transparent electrode 14 with the insulating layer 30 sandwiched therebetween, it becomes easier to obtain a larger first portion in plan view. 1 area of the connecting portion 20. Therefore, it is possible to ensure a wide contact area with the first transparent electrode 13 and to reduce the resistance value of the first connection portion 20. Therefore, it is possible to suppress the decrease in the conduction stability and the ESD resistance.

Since the first connection portion 20 is provided on the first transparent electrode 13 and has a pattern extending in the second direction intersecting the first direction, it is possible to prevent the first connection portion 20 from intersecting the second connection portion 21. The pattern of the first connection portion 20 to be laid is shortened. Therefore, the resistance value of the first connection portion 20 can be reduced, and the decrease in the conduction stability and the ESD resistance can be suppressed. In addition, since the contact area between the first connection portion 20 and the first transparent electrode 13 can be widened, and because the first connection surface 20a of the first connection portion 20 can be widened, the system can be stable against conduction. The reduction of the properties and ESD tolerance is suppressed.

By forming the insulating layer 30 in a generally rectangular frame-like pattern as shown in FIG. 3 (b), since it becomes easy to obtain a larger area of the first connection portion 20 in a planar view, it is possible to While ensuring a wide contact area with the first transparent electrode 13, the resistance value of the first connection portion 20 can be reduced. Therefore, it is possible to suppress the decrease in the conduction stability and the ESD resistance.

Hereinafter, modifications will be described. <First Modification Example> FIG. 5 is a plan view showing a first modification example of the aforementioned area A1 in the above embodiment. In the above embodiment, the first connecting portion 20 is formed into a substantially rectangular frame shape on a rectangular frame-shaped insulating layer 30 in a planar view as shown in FIG. The two adjacent second transparent electrodes 14 are arranged on both sides. Instead of this, the first connecting portion 120 of the first modification is not formed on the insulating layer 30 on the X1 side but is formed only on the insulating layer 30 on the X2 side, as shown in FIG. 5. It is arranged so that it passes only on the X2 side of the two adjacent second transparent electrodes 14. In this case, the first connecting portion 120 on the first pattern 30a on the Y1 side of the insulating layer 30 is the same as the first connecting portion 20 of the above embodiment, and extends from the central portion to the Y1 side. The first transparent electrode 13 is formed on the ground. As a result, the first transparent electrode 13 on the Y1 side and the first connection portion 120 are electrically connected. In addition, the first connecting portion 120 on the third pattern 30c on the Y2 side of the insulating layer 30 is formed to extend from the central portion thereof to the first transparent electrode 13 on the Y2 side, whereby Y2 The first transparent electrode 13 on the side and the first connecting portion 120 are electrically connected. With this, the underside (first connecting surface) of each of the Y1 side end portion and the Y2 side end portion of the first connecting portion 120 is first transparent to the two adjacent ones in the Y1-Y2 direction. The electrodes 13 are in contact.

Here, as the "first connecting portion", the first connecting portion 20 or the first connecting portion 120 of the first modification example is generally along the first direction (Y1-Y2 direction) as in the first embodiment. It is ideal that the second direction (X1-X2 direction) orthogonal to each other extends over each of the two first transparent electrodes 13 that are to be electrically connected, but as long as it is the same as the first direction The directions where the directions intersect may be directions that are not orthogonal to the first direction. The second transparent electrode 14 is preferably extended along the first direction in the same way as the first connection portion 20 of the above embodiment or the first connection portion 120 of the first modification. However, the second transparent electrode 14 is also preferably extended in the first direction. It can be formed so as to extend in a direction that does not coincide with the second direction.

As such, by extending the first connection portion over each of the two first transparent electrodes 13 that are the object of electrical connection, and extending in a direction crossing the first direction, the The pattern of the first connection portion to be laid so as to intersect with the second connection portion is shortened. Therefore, it is possible to reduce the resistance value of the first connection portion, and it is possible to suppress the decrease in the conduction stability and the ESD resistance. In addition, the contact area between the first connection portion and the first transparent electrode 13 can be enlarged, that is, the first connection surface of the first connection portion can be enlarged. Therefore, it is possible to suppress the decrease in the conduction stability and the ESD resistance.

<Second Modification Example> Fig. 6 is a plan view showing a second modification example of the aforementioned area A1 in the above embodiment, and showing the arrangement of the transparent electrode and the insulating layer in an enlarged manner. FIG. 7 (a) is a plan view showing a state where a second connection portion is further provided in the area shown in FIG. 6, and FIG. 7 (b) is a view showing a state in which the second connection portion is provided in FIG. 7 (a). A plan view showing a state where the first connection portion is provided is shown. Fig. 8 (a) is a cross-sectional view taken along line 8A-8A 'of Fig. 7 (b), and Fig. 8 (b) is a cross-sectional view taken along line 8B-8B' of Fig. 7 (b).

In the second modification, as shown in FIG. 6, FIG. 7, and FIG. 8 (b), through holes 231 and 232 (second through holes) are formed in the Z1-Z2 direction and penetrate the insulating layer 230. Through these through holes 231 and 232, two adjacent second transparent electrodes 14 are electrically connected through a second connection portion 221. Here, the position on the lower surface of the second connection portion 221 on the through holes 231 and 232 becomes the second connection surface, and the second connection surface is on the upper side of the second transparent electrode 14. According to this configuration, the pattern shape of the two first transparent electrodes 13 adjacent to the two second transparent electrodes 14 that are to be electrically connected can be easily made by the second connection portion 221. Ground adjacent second transparent electrodes 14 are connected.

In the second modification, as shown in FIG. 6, for the area adjacent to the two first transparent electrodes 13 and the two second transparent electrodes 14, from the Z1 side along the Z1-Z2 direction, In the observation plane, an insulating layer 230 is provided to cover a part of the first transparent electrode 13 and a part of the second transparent electrode 14. The insulating layer 230 has a rectangular shape in a plan view, and two through holes 231 and 232 are formed at positions corresponding to each of the two adjacent second transparent electrodes 14. The two through holes 231 and 232 are formed so as to penetrate the insulating layer 230 along the Z1-Z2 direction (FIG. 8 (b)).

As shown in FIG. 7 (a), the second connecting portion 221 having a rectangular shape in plan view is formed on the insulating layer 230 and extends in the X1-X2 direction. The second connecting portion 221 extends both ends in the longitudinal direction to a position where the two through holes 231 and 232 are respectively covered. With this configuration, the second transparent electrode 14 on the X1 side of the two adjacent second transparent electrodes 14 is electrically connected to the second connection portion 221 through one of the through holes 231, and the X2 side The second transparent electrode 14 is electrically connected to the second connection portion 221 through the other through-hole 232. With this connection, the adjacent two second transparent electrodes 14 are connected through the second connection portion. 221 is electrically connected.

Further, as shown in FIG. 7 (b), the first connecting portion 20 is formed on the insulating layer 230 so as to surround the outer side of the second connecting portion 221, as in the first connecting portion 20 of the above embodiment. The connecting portion 220 (slashed portion). As shown in FIGS. 7 (b) and 8 (a), the first connecting portion 220 on the first pattern 230a on the Y1 side of the insulating layer 230 extends from the central portion thereof to the first portion 230 on the Y1 side. 1 transparent electrode 13 is formed on the ground, and thereby the first transparent electrode 13 on the Y1 side and the first connection portion 220 are electrically connected. In addition, the first connecting portion 220 on the third pattern 230c on the Y2 side of the insulating layer 230 is formed to extend from the central portion thereof to the first transparent electrode 13 on the Y2 side, whereby Y2 The first transparent electrode 13 on the side and the first connection portion 220 are electrically connected. In other words, the lower surfaces of each of the Y1 side end portion and the Y2 side end portion of the first connection portion 220 are the first transparent electrodes that are the first connection surface 220a and are adjacent to each other in the Y1-Y2 direction. 13 make contact respectively (Fig. 8 (a)).

<Third Modification> FIG. 9 (a) is a cross-sectional view in a third modification corresponding to a cross-sectional view at line 8A-8A 'shown in FIG. 7 (b) of the second modification. 9 (b) is a cross-sectional view in a third modification corresponding to the cross-sectional view at line 8B-8B 'shown in FIG. 7 (b) of the second modification. That is, Figs. 9 (a) and (b) are sectional views at positions corresponding to Figs. 8 (a) and (b), respectively.

In the third modification, in addition to the through holes 231 and 232 (second through holes) of the second modification, the through holes 341 and 342 are provided in the Z1-Z2 direction and penetrate the insulating layer 230. (1st through hole). The first connection portion 320 is formed on the insulating layer 230 so as to surround the outer side of the second connection portion 221, but it is not the same as the first connection portion 20 and the first connection portion of the embodiment described above. The first connecting portion 120 of the modified example and the first connecting portion 220 of the second modified example generally extend to the first transparent electrode 13 without being connected to the first transparent electrode 13.

The through holes 341 and 342 are formed at positions corresponding to each of the two adjacent first transparent electrodes 13. Furthermore, the two through holes 341 and 342 are covered by the first connection portion 320. With this configuration, the first transparent electrode 13 on the Y1 side of the two adjacent first transparent electrodes 13 is electrically connected to the first connection portion 320 through one of the through holes 341, and the Y2 side The first transparent electrode 13 is electrically connected to the first connection portion 320 through the other through-hole 342. With this connection, two adjacent first transparent electrodes 13 are connected through the first connection portion. 320 and is electrically connected. Here, the surface of the lower surface of the first connection portion 320 on the through holes 341 and 342 becomes the first connection surface, and the first connection surface is located on the upper side of the first transparent electrode 13. Furthermore, the insulating layer 230 has a configuration in which through-holes 341 and 342 (first through-holes) are provided in addition to the through-holes 231 and 232 (second through-holes), because the first connection portion 320 and the second connection Since the part 221 is arranged on the same insulating layer 230, there are fewer restrictions on the shape of the pattern, and by this, it is possible to suppress the decrease in the conduction stability and the ESD resistance. Moreover, since it is disposed on the insulating layer 230 which is a substantially flat surface, the patterns of the first connection portion 320 and the second connection portion 221 can be formed with good accuracy.

Other modifications will be described. The following description is made as a modification example of the above embodiment, but it is also applicable to the first to third modification examples described above.

If it is the first transparent electrode 13 and the second transparent electrode 14 in a region where the first connection portion 20 and the second connection portion 21 are removed in a planar view, a pattern containing an amorphous oxide-based material is disposed. Layer, because the pattern layer has the same appearance or reflectivity as the first connection portion 20 and the second connection portion 21, because the first connection portion 20 and the second connection portion 21 are difficult to be visually recognized , So the system is ideal. Further, if this pattern layer is electrically connected to one of the first connection portion 20 and the second connection portion 21 and is insulated from the other connection portion, the transparent electrode in which the pattern layer is disposed can be arranged. The contact area between the connecting portion and the corresponding connecting portion is substantially enlarged, and thus the reduction in the conduction stability and the ESD resistance can be suppressed.

If a pattern layer containing an amorphous oxide-based material is disposed on each of the connection regions 15a, 15b, 16a, and 16b, and in the same region after removing the third connection portion 22 and the fourth connection portion 23, borrow Therefore, the pattern layer has the same appearance or reflectivity as the third connection portion 22 and the fourth connection portion 23, and since the third connection portion 22 and the fourth connection portion 23 are difficult to be visually recognized, it is ideal. Furthermore, if this pattern layer is electrically connected to the third connection portion 22 and the fourth connection portion 23, respectively, it is the contact area between the connection area where the pattern layer is arranged and the corresponding connection portion. Substantial expansion can suppress the decrease in the conduction stability and the ESD tolerance. The pattern layer containing an amorphous oxide-based material may be provided between the connection region 15 b and the first connection end portion 15 and between the connection region 16 b and the second connection end portion 16.

Preferably, a first impedance setting portion including an amorphous oxide-based material is formed between the adjacent first transparent electrode 13 and the first lead-out wiring 151, and the adjacent second transparent electrode 14 and the first Between the two lead-out wirings 161, a second impedance setting portion including an amorphous oxide-based material is formed. In this configuration, by changing the pattern area and shape of the first impedance setting section and the second impedance setting section, it is possible to make the group of the first transparent electrodes 13 (the first electrode connection body 13C) along the first direction. The impedance and the impedance of the group of the second transparent electrodes 14 (the second electrode connecting body 14C) along the second direction are consistent with each other. Therefore, it is possible to avoid a situation in which a current is concentrated in a single place, and to suppress a reduction in ESD tolerance.

Although the present invention has been described with reference to the above-mentioned embodiment, the present invention is not limited to the above-mentioned embodiment, and may be improved or changed within the scope of the purpose of improvement or the idea of the present invention. [Industrial possibilities]

As described above, the electrostatic capacity sensor of the present invention is useful from the viewpoint of suppressing the decrease in the conduction stability and the ESD resistance.

10‧‧‧ electrostatic capacitance sensor

11‧‧‧ detection area

12‧‧‧ substrate

12a‧‧‧surface (main surface)

13‧‧‧The first transparent electrode

13C‧‧‧The first electrode connector

14‧‧‧ 2nd transparent electrode

14C‧‧‧Second electrode connector

15‧‧‧ the first connection end

15a, 15b‧‧‧ Connected area

151‧‧‧The first export wiring

16‧‧‧ 2nd connection end

16a, 16b‧‧‧ Connected area

161‧‧‧Second export wiring

17‧‧‧ non-detection area

18‧‧‧ insulated area

18a, 19a‧‧‧1st insulation area

18b, 19b‧‧‧Second insulation area

20‧‧‧ the first connection

20a‧‧‧The first connection surface

21‧‧‧The second link

21a‧‧‧Second connection surface

22‧‧‧The third link

23‧‧‧The fourth link

30‧‧‧ Insulation

30a, 30b, 30c, 30d

30s‧‧‧ opening

120‧‧‧ the first connection

220‧‧‧The first connection

220a‧‧‧The first connection surface

221‧‧‧The second connection

230‧‧‧ Insulation

230a, 230c‧‧‧ pattern

231, 232‧‧‧through hole (2nd through hole)

320‧‧‧The first connection

341, 342‧‧‧through hole (1st through hole)

A1‧‧‧Area

[Fig. 1] An enlarged plan view showing a part of a detection area of an electrostatic capacity sensor according to an embodiment of the present invention. [Fig. 2] (a) is a plan view showing the arrangement of the transparent electrodes in the area A1 of Fig. 1, and (b) is a view of an insulation layer provided in the area shown in Fig. 2 (a) The floor plan for the status display. [Fig. 3] (a) is a plan view showing a state where a second connection portion is further provided in the area shown in Fig. 2 (b), and (b) is a view showing a state shown in Fig. 3 (a) A plan view showing a state where the first connection portion is provided in the region is shown. [Fig. 4] (a) is a sectional view taken along the line 4A-4A 'in Fig. 3 (b), and (b) is a sectional view taken along the line 4B-4B' in Fig. 3 (b).图 [Fig. 5] is a plan view showing an enlarged detection area in the first modification. [Fig. 6] is a plan view showing the arrangement of the transparent electrode and the insulating layer in the detection area of the second modification example in an enlarged manner. [Fig. 7] (a) is a plan view showing a state in which a second connection portion is further provided in the area shown in Fig. 6, and (b) is a view showing the area shown in Fig. 7 (a) A plan view showing a state where the first connection portion is provided is shown. [Fig. 8] (a) is a sectional view taken along the line 8A-8A 'in Fig. 7 (b), and (b) is a sectional view taken along the line 8B-8B' in Fig. 7 (b). [FIG. 9] (a) is a cross-sectional view in a third modification corresponding to the cross-section at line 8A-8A 'shown in FIG. 7 (b) of the second modification, and (b) is Corresponds to the cross-sectional view in the third modification of the cross-sectional view at the line 8B-8B 'shown in FIG. 7 (b) of the second modification.

Claims (11)

An electrostatic capacitance type sensor is characterized by having: a base material having translucency; and a plurality of first transparent electrodes located at a detection area on a main surface of one of the base materials, along They are arranged side by side in the first direction, are transmissive, and include conductive nanowires; and a plurality of second transparent electrodes are located at the detection area and along the first direction intersecting the first direction. It is arranged side by side in two directions, has translucency, and contains conductive nanowires; and the first connection portion electrically connects two adjacent first transparent electrodes to each other, and includes non- A crystalline oxide-based material; and a second connection portion that electrically connects the two adjacent second transparent electrodes to each other and includes an amorphous oxide-based material; the first connection portion and the first connection portion; 2 The connecting portion is arranged so that it does not cross each other when viewed from a plane viewed from a direction orthogonal to the main surface. At the first connecting portion, the connecting portion A first connection surface is provided on each of the two adjacent first transparent electrodes, and the first connection surface is electrically connected to each of the first transparent electrodes, and is connected to the second connection. Each part is provided with a second connection surface disposed on the two adjacent second transparent electrodes, and the second connection surface is electrically connected to each of the second transparent electrodes. The electrostatic capacitance type sensor described in item 1 of the scope of the patent application, wherein is formed in a region where the first connection portion is formed, and a part of the second transparent electrode is formed in a plane view. The covered insulating layer, the first connecting portion electrically connecting the two first transparent electrodes, is arranged on the second transparent electrode adjacent to the two first transparent electrodes. On the insulation. The electrostatic capacitance type sensor described in the second item of the patent application scope, wherein the first connection part is provided on each of the two first transparent electrodes that are the objects to be electrically connected, and is provided with A pattern extending in a direction crossing the first direction. The electrostatic capacity sensor described in item 3 of the scope of the patent application, wherein the first connection part is provided on each of the two first transparent electrodes that are the objects to be electrically connected, and is provided with The pattern extending along the second direction is provided on the insulation layer of each of the two second transparent electrodes adjacent to the two first transparent electrodes, and is provided along the second insulating layer. The pattern extending in the first direction. The electrostatic capacitance type sensor according to any one of claims 2 to 4 in the patent application scope, wherein: is formed on the insulating layer so as to face the second transparent electrode and penetrate the insulating layer on the upper and lower sides. The second through hole ， is electrically connected to the adjacent second transparent electrode through the second connecting portion through the second through hole. The electrostatic capacitance sensor described in item 5 of the scope of the patent application, wherein: the aforementioned insulating layer covers a part of the aforementioned first transparent electrode under the aforementioned plane view, and is formed at the aforementioned insulating layer There is a first through hole facing the first transparent electrode and penetrating the insulating layer from above and below. Via the first through hole, the adjacent first transparent electrodes are electrically connected through the first connection portion. . The electrostatic capacity sensor according to item 1 in the scope of the patent application, wherein: on the first transparent electrode and the second transparent electrode, under the plane view, in addition to the first connection portion and the first In a region other than the connection portion, a pattern layer containing an amorphous oxide-based material is arranged. The electrostatic capacitance sensor described in item 7 of the scope of the patent application, wherein: the pattern layer is electrically connected to one of the first connection portion and the second connection portion, and is mutually connected with the other insulation. The electrostatic capacitance type sensor described in item 1 of the scope of the patent application, which is provided with: a first lead-out wiring, which is a plurality of the first first transparently connected to the plurality of the first connecting portions; The electrodes are electrically connected; and the second lead-out wiring is electrically connected to the plurality of the second transparent electrodes connected by the plurality of the second connecting portions, and the adjacent first transparent electrodes and A first impedance setting section including an amorphous oxide-based material is formed between the first lead-out wirings, and is formed between the adjacent second transparent electrode and the second lead-out wiring. There is a second impedance setting section including an amorphous oxide-based material. The electrostatic capacitive sensor according to item 1 in the scope of the patent application, wherein the aforementioned conductive nanowire is made of gold nanowire, silver nanowire, and copper nanowire. At least one selected from the group. The electrostatic capacity sensor according to item 1 of the scope of the patent application, wherein the aforementioned amorphous oxide-based material is composed of amorphous ITO, amorphous IZO, amorphous GZO, or amorphous At least one selected from the group consisting of AZO and amorphous FTO.