JP6851242B2 - Power converter - Google Patents

Description

The present invention relates to a power conversion device including a printed circuit board on which a plurality of power modules in which a semiconductor switching element and a drive circuit of the semiconductor switching element are incorporated in the same package are arranged.

Silicon semiconductors have been used for semiconductor switching elements of conventional inverters or converters, but in recent years, the use of wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) has attracted attention. ing. In semiconductor switching elements composed of wideband gap semiconductors, the voltage change rate and current change rate during switch operation are high, so wiring inductance between wiring inductance or wiring between wiring, which has not been a problem in the past, has not been a problem in the past. The generation of surge voltage due to capacitance cannot be ignored.

The power conversion device disclosed in Patent Document 1 includes a plurality of laminated wiring plates having a three-layer laminated structure in which a positive electrode conductor plate and a negative electrode conductor plate are laminated via an insulating sheet, and two power modules constituting an inverter circuit. The two power modules are arranged in parallel, the positive electrode terminals of the plurality of capacitors are connected to the positive electrode conductor plate, and the negative electrode terminals of the plurality of capacitors are connected to the negative electrode conductor plate. The power conversion device disclosed in Patent Document 1 can make the wiring impedance from the plurality of capacitors to the power module the same value by adopting the wiring of the laminated structure for the power wiring from the plurality of capacitors to the power module. This reduces the surge voltage of the power module caused by the variation in the wiring inductance.

Japanese Unexamined Patent Publication No. 2011-19395

However, as disclosed in Patent Document 1, even if the wiring impedances of the plurality of current paths from the smoothing capacitor to the semiconductor element have the same value, the semiconductor switching element composed of the wide band gap semiconductor has a high speed. When driven, the current flowing in the current path changes rapidly. Therefore, the surge voltage generated at both ends of the wiring impedance becomes large, and there is a problem that the semiconductor element fails or the radio wave noise increases due to the generation of the surge voltage. Further, when a device is configured by using a plurality of power modules in which a plurality of semiconductor switching elements are packaged in one package, the area of the entire circuit increases, so that the current path becomes large and the impedance of the current path becomes large. There is.

The present invention has been made in view of the above, and an object of the present invention is to obtain a power conversion device capable of suppressing a failure of a semiconductor element or an increase in radio wave noise due to the generation of a surge voltage.

In order to solve the above-mentioned problems and achieve the object, the power conversion device of the present invention is provided on the printed circuit board, a plurality of power modules provided on the printed circuit board, a snubber capacitor provided on the printed circuit board, and the printed circuit board. The power module includes a package having a semiconductor switching element, a power side terminal provided in the package, and a control side terminal provided in the package, and the distance from the power side terminal to the snubber capacitor. Is shorter than the distance from the control side terminal to the snubber capacitor, the printed circuit board has multiple wiring layers, and the positive and negative terminals of the smoothing capacitor use different layers in the multiple wiring layers. together are wired together Te, Ru is wired to the power-side terminal. The power module includes a plurality of semiconductor switching element pairs of two semiconductor switching elements connected in series, one end of each of the plurality of semiconductor switching element pairs is connected to the positive side of the smoothing capacitor, and the plurality of semiconductor switching element pairs The other end of each is connected to the negative side of the smoothing capacitor, and the power side terminal includes an output terminal connected to the connection point of two semiconductor switching elements connected in series. The output terminals connected to the connection points of the two semiconducting switching elements constituting each of the plurality of semiconductor switching element pairs were connected to each other, and were connected to the positive side of the smoothing capacitor among the plurality of semiconductor switching element pairs. A plurality of semiconductor switching elements are driven on / off at the same timing, and among a plurality of semiconductor switching element pairs, a plurality of semiconductor switching elements connected to the negative side of the smoothing capacitor are driven on / off at the same timing.

According to the present invention, it is possible to suppress a failure of a semiconductor element or an increase in radio wave noise due to the generation of a surge voltage.

The figure which shows the printed circuit board provided in the power conversion apparatus which concerns on Embodiment 1, and the component group provided on the printed circuit board. FIG. 1 is a cross-sectional view taken along the line II-II. The figure which shows the structural example of the power conversion circuit provided in the power conversion apparatus which concerns on Embodiment 1. The figure which shows the structural example of the power module shown in FIG. The figure which shows an example of the wiring pattern on the printed circuit board provided in the power conversion apparatus which concerns on Embodiment 1. The figure which shows the printed circuit board provided in the power conversion apparatus which concerns on Embodiment 2, and the component group provided on the printed circuit board.

Hereinafter, the power conversion device according to the embodiment of the present invention will be described in detail with reference to the drawings. The present invention is not limited to this embodiment.

Embodiment 1.
FIG. 1 is a diagram showing a printed circuit board included in the power conversion device according to the first embodiment and a group of parts provided on the printed circuit board. FIG. 2 is a cross-sectional view taken along the line II-II shown in FIG. FIG. 3 is a diagram showing a configuration example of a power conversion circuit included in the power conversion device according to the first embodiment. FIG. 4 is a diagram showing a configuration example of the power module shown in FIG.

As shown in FIG. 1, the power conversion device 10-1 according to the first embodiment includes a housing 10 constituting the outer shell of the power conversion device 10-1 and a printed circuit board 1 provided inside the housing 10. The printed circuit board 1 has three power modules 11, 12, 13 and an input capacitor 3, three smoothing capacitors 41, 42, 43, three snubber capacitors 51, 52, 53, and three output terminals 61, 62. , 63 and.

In FIG. 1, the arrangement direction of the three power modules 11, 12, and 13 on the printed substrate 1 is the X-axis direction, the direction orthogonal to the X-axis direction on the printed substrate 1 is the Y-axis direction, and the X-axis direction and Y. The direction orthogonal to both of the axial directions is defined as the Z-axis direction. The Z-axis direction is equal to the thickness direction of the printed circuit board 1, that is, the direction from one plate surface of the printed circuit board 1 to the other plate surface.

In the following, the three power modules 11, 12, 13 will be referred to as "power modules 11, 12, 13", the three smoothing capacitors 41, 42, 43 will be referred to as "smoothing capacitors 41, 42, 43", and the three snubbers will be referred to. The capacitors 51, 52, 53 may be referred to as "snubber capacitors 51, 52, 53", and the three output terminals 61, 62, 63 may be referred to as "output terminals 61, 62, 63".

In FIG. 1, the power modules 11, 12, and 13 provided on the printed circuit board 1 show three examples, but the number of power modules constituting the power conversion device 10-1 according to the first embodiment is three. It is not limited to, and may be two or more. In FIG. 1, the smoothing capacitors 41, 42, and 43 provided on the printed circuit board 1 show three examples, but the number of smoothing capacitors constituting the power conversion device 10-1 according to the first embodiment is three. It is not limited to, and may be one or more. In FIG. 1, the snubber capacitors 51, 52, and 53 provided on the printed circuit board 1 show three examples, but the number of snubber capacitors constituting the power conversion device 10-1 according to the first embodiment is three. It is not limited to, and may be one or more.

The power module 11 shown in FIG. 1 includes a package 11pkg including a plurality of semiconductor switching elements and a switch drive circuit, a power side terminal 11p, and a control side terminal 11s. The power module 12 includes a package 12pkg including a plurality of semiconductor switching elements and a switch drive circuit, a power side terminal 12p, and a control side terminal 12s. The power module 13 includes a package 13pkg including a plurality of semiconductor switching elements and a switch drive circuit, a power side terminal 13p, and a control side terminal 13s.

As shown in FIG. 2, the printed circuit board 1 has two wiring layers indicated by reference numerals 1a and 1b, and different wiring patterns are formed in the two wiring layers. The first wiring pattern represented by reference numeral 1a is formed on one plate surface of the printed circuit board 1 in the Z-axis direction. The second wiring pattern represented by reference numeral 1b is formed on the other plate surface of the printed circuit board 1 in the Z-axis direction. In FIG. 1, the parts provided on the first wiring pattern 1a side of the printed circuit board 1 are shown by solid lines, and the parts provided on the second wiring pattern 1b side of the printed circuit board 1 are shown by dotted lines. An input capacitor 3, smoothing capacitors 41, 42, 43, snubber capacitors 51, 52, 53, and output terminals 61, 62, 63 are provided on the first wiring pattern 1a side of the printed circuit board 1. .. Power modules 11, 12, and 13 are provided on the second wiring pattern 1b side of the printed circuit board 1.

As shown in FIG. 1, the power modules 11, 12, and 13 are provided so as to be separated from each other in the order of the power module 11, the power module 12, and the power module 13 in the X-axis direction. The smoothing capacitors 41, 42, and 43 are provided so as to be separated from each other in the order of the smoothing capacitor 41, the smoothing capacitor 42, and the smoothing capacitor 43 in the X-axis direction. The snubber capacitors 51, 52, and 53 are provided so as to be separated from each other in the order of the snubber capacitor 51, the snubber capacitor 52, and the snubber capacitor 53 in the X-axis direction.

The smoothing capacitor 41, the snubber capacitor 51, and the power module 11 are provided apart from each other in the order of the smoothing capacitor 41, the snubber capacitor 51, and the power module 11 in the Y-axis direction. The snubber capacitor 51 is provided between the power module 11 and the smoothing capacitor 41. A power side terminal 11p is provided between the package 11pkg of the power module 11 and the snubber capacitor 51. The control side terminal 11s of the power module 11 is provided on the side opposite to the power side terminal 11p in the Y-axis direction of the power module 11. In the XY plane of the printed circuit board 1, the distance from the power side terminal 11p of the power module 11 to the snubber capacitor 51 is shorter than the distance from the power side terminal 11p of the power module 11 to the smoothing capacitor 41.

The smoothing capacitor 42, the snubber capacitor 52, and the power module 12 are provided apart from each other in the order of the smoothing capacitor 42, the snubber capacitor 52, and the power module 12 in the Y-axis direction. The snubber capacitor 52 is provided between the power module 12 and the smoothing capacitor 42. A power side terminal 12p is provided between the package 12pkg of the power module 12 and the snubber capacitor 52. The control side terminal 12s of the power module 12 is provided on the side opposite to the power side terminal 12p in the Y-axis direction of the power module 12. In the XY plane of the printed circuit board 1, the distance from the power side terminal 12p of the power module 12 to the snubber capacitor 52 is shorter than the distance from the power side terminal 12p of the power module 12 to the smoothing capacitor 42.

The smoothing capacitor 43, the snubber capacitor 53, and the power module 13 are provided apart from each other in the order of the smoothing capacitor 43, the snubber capacitor 53, and the power module 13 in the Y-axis direction. The snubber capacitor 53 is provided between the power module 13 and the smoothing capacitor 43. A power side terminal 13p is provided between the package 13pkg of the power module 13 and the snubber capacitor 53. The control side terminal 13s of the power module 13 is provided on the side opposite to the power side terminal 13p in the Y-axis direction of the power module 13. In the XY plane of the printed circuit board 1, the distance from the power side terminal 13p of the power module 13 to the snubber capacitor 53 is shorter than the distance from the power side terminal 13p of the power module 13 to the smoothing capacitor 43.

As shown in FIG. 1, the power modules 11, 12, 13 arranged in a row are provided in parallel with the smoothing capacitors 41, 42, 43 arranged in a row, and the power modules 11, 12, 13 arranged in a row. The power side terminals 11p, 12p, and 13p of 13 are arranged in a straight line. Specifically, the power side terminal 11p, the power side terminal 12p, and the power side terminal 13p are arranged on the virtual line 20 shown in FIG. 1 and are arranged apart from each other. The virtual line 20 is a virtual straight line extending in the X-axis direction in the XY plane of the printed circuit board 1. Snubber capacitors 51, 52, 53 and smoothing capacitors 41, 42, 43 are provided near the power side terminals 11p, the power side terminals 12p, and the power side terminals 13p arranged in a row in this way. Then, the power is set so that the distance from the power side terminals 11p, 12p, 13p to the snubber capacitors 51, 52, 53 is shorter than the distance from the power side terminals 11p, 12p, 13p to the smoothing capacitors 41, 42, 43. Modules 11, 12, 13 and snubber capacitors 51, 52, 53 and smoothing capacitors 41, 42, 43 are arranged on the printed circuit board 1.

As shown in FIG. 2, the output terminal 61 is arranged on the first wiring pattern 1a side of the printed circuit board 1, and the power module 11 is arranged on the second wiring pattern 1b side of the printed circuit board 1. The output terminal 61 is provided in the region 11A formed by projecting the power module 11 toward the printed circuit board 1 in the Z-axis direction. The output terminal 62 shown in FIG. 1 is provided in a region formed by projecting the power module 12 toward the printed circuit board 1 in the Z-axis direction. Further, the output terminal 63 is provided in a region formed by projecting the power module 13 toward the printed circuit board 1 in the Z-axis direction.

As shown in FIG. 2, a lead wire 102 is attached to the output terminal 61 by a screw 101. The lead wire 102 is connected to the DC power input unit 8 shown in FIG. The terminal 61a provided on the output terminal 61 is inserted into a through hole (not shown) formed on the printed circuit board 1 and soldered to, for example, a second wiring pattern 1b. The power side terminal 11p of the power module 11 is inserted into a through hole (not shown) and soldered to, for example, a second wiring pattern 1b. The terminal 61a of the output terminal 61 and the power side terminal 11p of the power module 11 are electrically connected by the second wiring pattern 1b.

As shown in FIG. 2, by providing the output terminal 61 in the region 11A formed by projecting the power module 11 toward the printed circuit board 1 in the Z-axis direction, the power module 11 is provided with an output terminal 61 from the power side terminal 11p. The wiring pattern on the printed circuit board 1 leading to the terminal 61a can be wired without diverting to the snubber capacitor 51 side of the power side terminal 11p. Hereinafter, the wiring pattern on the printed circuit board 1 from the power side terminal 11p of the power module 11 to the terminal 61a of the output terminal 61 is referred to as a “first board wiring pattern”.

When the first board wiring pattern is bypassed to the snubber capacitor 51 side of the power side terminal 11p, the first board wiring pattern is between a plurality of wiring patterns (not shown) provided around the snubber capacitor 51 and the smoothing capacitor 41. There is a restriction that the wiring width of the first board wiring pattern cannot be widened. Hereinafter, the wiring pattern (not shown) provided around the snubber capacitor 51 and the smoothing capacitor 41 will be referred to as a “second board wiring pattern”. The second board wiring pattern is, for example, a wiring pattern from the smoothing capacitor 41 to the power side terminal 11p, or a wiring pattern from the snubber capacitor 51 to the power side terminal 11p. By providing the output terminal 61 at the position shown in FIG. 2, it is not necessary to wire the first board wiring pattern between the plurality of second board wiring patterns, and the wiring width of the first board wiring pattern can be widened. it can.

As shown in FIG. 3, the power converter 10-1 converts the DC voltage into a DC voltage of a specific value and outputs the converter 110, and converts the DC voltage output by the converter 110 into an AC voltage of a specific value. The inverter 120 that outputs the voltage and the control unit 130 that generates a pulse width modulation (PWM) signal for controlling the on / off operation of a plurality of semiconductor switching elements of each of the power modules 11, 12, and 13. Be prepared. The DC power supply 7 is a DC power supply means such as a solar cell module or a storage battery that supplies DC power to the power conversion device 10-1. The power conversion device 10-1 has a function of converting a DC voltage output from a DC power source 7 into an AC voltage and outputting it, and is used as a power conditioner for photovoltaic power generation or a storage battery.

The control unit 130 has, for example, a voltage value detected by a DC voltage detection unit (not shown), a voltage value detected by an AC voltage detection unit (not shown), and a current value detected by an AC current detection unit (not shown). A PWM signal is generated based on the above.

The converter 110 is, for example, a step-up chopper type DC-DC converter. The converter 110 includes a DC power input unit 8 connected to the DC power supply 7, a power module 11, and a snubber capacitor 51. One end of the snubber capacitor 51 is connected to the power side terminal 11p of the power module 11 via the positive electrode side DC bus 9a, and the other end is connected to the power side terminal 11p of the power module 11 via the negative electrode side DC bus 9b. To.

The converter 110 includes an input capacitor 3, a converter reactor 2, an output terminal 61, and three smoothing capacitors 41, 42, and 43. One end of the input capacitor 3 is connected to the positive electrode of the DC power input unit 8, and the other end is connected to the negative electrode of the DC power input unit 8. One end of the converter reactor 2 is connected to one end of the input capacitor 3 and is connected to the positive electrode of the DC power input unit 8. The output terminal 61 is connected to the other end of the converter reactor 2 and is also connected to the power side terminal 11p of the power module 11. One end of each of the three smoothing capacitors 41, 42, 43 is connected to the positive electrode side DC bus 9a, and the other end of each is connected to the negative electrode side DC bus 9b.

The inverter 120 includes a power module 12, a power module 13, a filter capacitor 6 connected in parallel to the AC power output unit 14, and one end connected to one end of the filter capacitor 6 and connected to the AC power output unit 14. A filter reactor 4 and a filter reactor 5 having one end connected to the other end of the filter capacitor 6 and connected to the AC power output unit 14 are provided.

Further, the inverter 120 is connected to the other end of the filter reactor 4 and the output terminal 62 connected to the power side terminal 12p of the power module 12, and is connected to the other end of the filter reactor 5 and is connected to the power side of the power module 13. It includes an output terminal 63 connected to the terminal 13p, a snubber capacitor 52, and a snubber capacitor 53. One end of the snubber capacitor 52 is connected to the power side terminal 12p of the power module 12 via the positive electrode side DC bus 9a, and the other end is connected to the power side terminal 12p of the power module 12 via the negative electrode side DC bus 9b. To. One end of the snubber capacitor 53 is connected to the power side terminal 13p of the power module 13 via the positive electrode side DC bus 9a, and the other end is connected to the power side terminal 13p of the power module 13 via the negative electrode side DC bus 9b. To.

Reference numerals 71, 72, 81, 82, 91, 92 represent the parasitic inductance of the wiring pattern constituting the positive electrode side DC bus 9a. Reference numerals 73, 74, 83, 84, 93, 94 represent the parasitic inductance of the wiring pattern constituting the negative electrode side DC bus 9b.

The parasitic inductance 71 represents the inductance of the wiring pattern from the power side terminal 11p of the power module 11 to one end of the snubber capacitor 51. The parasitic inductance 73 represents the inductance of the wiring pattern from the power side terminal 11p of the power module 11 to the other end of the snubber capacitor 51. The parasitic inductance 72 represents the inductance of the wiring pattern from one end of the snubber capacitor 51 to one end of the smoothing capacitor 41. The parasitic inductance 74 represents the inductance of the wiring pattern from the other end of the snubber capacitor 51 to the other end of the smoothing capacitor 41.

The parasitic inductance 81 represents the inductance of the wiring pattern from the power side terminal 12p of the power module 12 to one end of the snubber capacitor 52. The parasitic inductance 83 represents the inductance of the wiring pattern from the power side terminal 12p of the power module 12 to the other end of the snubber capacitor 52. The parasitic inductance 82 represents the inductance of the wiring pattern from one end of the snubber capacitor 52 to one end of the smoothing capacitors 41 and 42. The parasitic inductance 84 represents the inductance of the wiring pattern from the other end of the snubber capacitor 52 to the other end of the smoothing capacitors 42 and 43.

The parasitic inductance 91 represents the inductance of the wiring pattern from the power side terminal 13p of the power module 13 to one end of the snubber capacitor 53. The parasitic inductance 93 represents the inductance of the wiring pattern from the power side terminal 13p of the power module 13 to the other end of the snubber capacitor 53. The parasitic inductance 92 represents the inductance of the wiring pattern from one end of the snubber capacitor 53 to one end of the smoothing capacitor 43. The parasitic inductance 94 represents the inductance of the wiring pattern from the other end of the snubber capacitor 53 to the other end of the smoothing capacitor 43.

In the power converter 10-1, the DC voltage applied to the DC power input unit 8 is boosted to a specific value by the power module 11 and the converter reactor 2, and the boosted DC power is the power modules 12 and 13. The converted AC voltage is converted to a sinusoidal voltage by a filter composed of a filter reactor 4, a filter reactor 5, and a filter capacitor 6, and is connected to an AC power output unit 14 (not shown). It is output to the AC load of.

In the power conversion device 10-1 configured in this way, the wiring impedance has a different value depending on the position where each of the power modules 11, 12, and 13 is arranged. In particular, when the above-mentioned wide bandgap semiconductor is used for the semiconductor switching elements built in the power modules 11, 12, and 13, the value of the parasitic inductance of the wiring pattern greatly affects the generation of surge voltage. That is, when a semiconductor switching element composed of a wide bandgap semiconductor is driven at high speed, the current flowing in the wiring pattern changes quickly. Therefore, the larger the parasitic inductance on the wiring pattern, the larger the surge voltage, and the surge voltage is generated. There is a problem of failure of the semiconductor element or increase of radio noise due to the above.

In the power conversion device 10-1 according to the present embodiment, as shown in FIG. 1, the snubber capacitors 51, 52, between the smoothing capacitors 41, 42, 43 and the power side terminals 11p of the power modules 11, 12, 13 53 is provided. The distance from the power side terminals 11p, 12p, 13p of the plurality of power modules 11, 12, 13 to the smoothing capacitors 41, 42, 43 is from the control side terminals 11s, 12s, 13s of the power modules 11, 12, 13. It is shorter than the distance to the smoothing capacitors 41, 42, 43. Further, the distances from the power side terminals 11p, 12p, 13p of the plurality of power modules 11, 12, 13 to the snubber capacitors 51, 52, 53 are smoothed from the power side terminals 11p, 12p, 13p of the power modules 11, 12, 13. It is shorter than the distance to the capacitors 41, 42, 43.

With this configuration, the length of the wiring pattern between the power side terminals 11p, 12p, 13p of the power modules 11, 12, 13 and the snubber capacitors 51, 52, 53 is relatively short, and the parasitic inductance of the wiring pattern is increased. It is reduced, the value of the surge voltage generated due to the parasitic inductance becomes small, the failure of the semiconductor element is suppressed, and the radio wave noise is suppressed.

Next, the internal configurations of the power modules 11, 12, and 13 shown in FIG. 3 will be described with reference to FIG. Although the internal configuration of the power module 11 is shown in FIG. 4, the internal configuration of the power modules 12 and 13 is the same as that of the power module 11, so the description thereof will be omitted.

As shown in FIG. 4, the power module 11 includes a plurality of semiconductor switching elements 11H1, 11L1, 11H2, 11L2, 11H3, 11L3, an upper switch drive circuit 11a, and a lower switch drive circuit 11b. Further, the power module 11 includes three upper switch control terminals 11u1, 11u2, 11u3 and three lower switch control terminals 11d1, 11d2, 11d3. Each of the three upper switch control terminals 11u1, 11u2, 11u3 is connected to the control unit 130 shown in FIG. 3 and is also connected to the upper switch drive circuit 11a. Each of the three lower switch control terminals 11d1, 11d2, 11d3 is connected to the control unit 130 shown in FIG. 3 and to the lower switch drive circuit 11b.

Further, the power module 11 includes a positive terminal 11c, a negative terminal 11n, and three output terminals 11e1, 11e2, 11e3 connected to the output terminal 61 shown in FIG. The positive terminal 11c is connected to the positive electrode side DC bus 9a shown in FIG. 3 and is connected to the drains of the three semiconductor switching elements 11H1, 11H2, 11H3, respectively. The negative terminal 11n is connected to the negative electrode side DC bus 9b shown in FIG. 3 and is connected to the respective sources of the three semiconductor switching elements 11L1, 11L2, 11L3.

The drain of the semiconductor switching element 11L1 is connected to the source of the semiconductor switching element 11H1. The output terminal 11e1 is connected to the path from the semiconductor switching element 11H1 to the semiconductor switching element 11L1. The semiconductor switching element 11H1 and the semiconductor switching element 11L1 form a semiconductor switching element pair connected in series. One end of the semiconductor switching element pair is connected to the positive electrode side DC bus 9a of FIG. 3 via the positive terminal 11c, and the other end of the semiconductor switching element pair is connected to the negative electrode side DC bus 9a of FIG. 3 via the negative terminal 11n. Connected to 9b.

The drain of the semiconductor switching element 11L2 is connected to the source of the semiconductor switching element 11H2. The output terminal 11e2 is connected to the path from the semiconductor switching element 11H2 to the semiconductor switching element 11L2. The semiconductor switching element 11H2 and the semiconductor switching element 11L2 form a semiconductor switching element pair connected in series. One end of the semiconductor switching element pair is connected to the positive electrode side DC bus 9a of FIG. 3 via the positive terminal 11c, and the other end of the semiconductor switching element pair is connected to the negative electrode side DC bus 9a of FIG. 3 via the negative terminal 11n. Connected to 9b.

The drain of the semiconductor switching element 11L3 is connected to the source of the semiconductor switching element 11H3. The output terminal 11e3 is connected to the path from the semiconductor switching element 11H3 to the semiconductor switching element 11L3. The semiconductor switching element 11H3 and the semiconductor switching element 11L3 form a semiconductor switching element pair connected in series. One end of the semiconductor switching element pair is connected to the positive electrode side DC bus 9a of FIG. 3 via the positive terminal 11c, and the other end of the semiconductor switching element pair is connected to the negative electrode side DC bus 9a of FIG. 3 via the negative terminal 11n. Connected to 9b.

As shown in FIG. 3, the three upper switch control terminals 11u1, 11u2, 11u3 and the three lower switch control terminals 11d1, 11d2, 11d3 are connected to the control unit 130. PWM signals for on / off driving each of the three semiconductor switching elements 11H1, 11H2, 11H3 are input to the three upper switch control terminals 11u1, 11u2, 11u3. The PWM signal is converted into a drive signal that drives each of the three semiconductor switching elements 11H1, 11H2, and 11H3 on and off by the upper switch drive circuit 11a. PWM signals for on / off driving each of the three semiconductor switching elements 11L1, 11L2, 11L3 are input to the three lower switch control terminals 11d1, 11d2, 11d3. The PWM signal is converted into a drive signal that drives each of the three semiconductor switching elements 11L1, 11L2, 11L3 on and off by the lower switch drive circuit 11b.

The three input terminals 11u1, 11u2 and 11u3 of the upper switch drive circuit 11a are connected to each other, and the three input terminals 11d1, 11d2 and 11d3 of the lower switch drive circuit 11b are connected to each other. 11e2 and 11e3 are interconnected.

With the above configuration, the power modules 11, 12 and 13 have a configuration in which an output obtained by connecting three sets of semiconductor switching elements in parallel for each power module can be obtained, and small-capacity semiconductor switching elements are driven in parallel. This makes it possible to realize a device having a large current capacity.

A small amount of crystal defects remain in compound semiconductors such as SiC and GaN. For example, when an element having a specific chip area is made from a wafer having a uniform defect distribution, and when an element having an area 1/3 of that is made. When compared with, the yield of the latter is greatly improved. That is, when the element is designed so that the current value per unit area of the element is constant and the desired current capacity is secured, the yield is improved by using three of the latter elements, and as a result, the unit of the element. Manufacturing costs per area are reduced. That is, it is cost-effective to configure the power modules 11, 12, and 13 having a small current capacity in parallel.

On the other hand, when the power modules 11, 12, and 13 are connected in parallel, the switching waveform tends to vibrate due to variations in the characteristics of the semiconductor switching elements of the individual power modules. The vibration of this switching waveform is due to the resonance circuit of the inductance and capacitance on the wiring pattern. In response to such a problem, in the power conversion device 10-1 according to the first embodiment, the snubber capacitors 51, 52 are located between the smoothing capacitors 41, 42, 43 and the power side terminals 11p of the power modules 11, 12, 13. , 53 are provided, so that the parasitic inductance on the wiring pattern is reduced. Therefore, even if there is a slight variation in the characteristics of the semiconductor switching element of each power module, the vibration of the switching waveform is suppressed.

FIG. 5 is a diagram showing an example of a wiring pattern on a printed circuit board included in the power conversion device according to the first embodiment. In FIG. 5, in the XY plane, the hatching indicated by the diagonal line downward to the right represents the first wiring pattern 1a formed on one plate surface in the Z-axis direction of the printed circuit board 1. Further, in the XY plane, the hatching indicated by the diagonal line downward to the left represents the second wiring pattern 1b formed on the other plate surface in the Z-axis direction of the printed circuit board 1.

For example, the positive terminals of the smoothing capacitors 41, 42, and 43 are connected to the first wiring pattern 1a, and are electrically connected to the power side terminal 11p via the first wiring pattern 1a. The negative terminals of the smoothing capacitors 41, 42, and 43 are connected to the second wiring pattern 1b, and are electrically connected to the power side terminal 11p via the second wiring pattern 1b. Further, the positive terminals of the snubber capacitors 51, 52, and 53 are connected to the first wiring pattern 1a, and are electrically connected to the power side terminal 11p via the first wiring pattern 1a. The negative terminals of the snubber capacitors 51, 52, and 53 are connected to the second wiring pattern 1b, and are electrically connected to the power side terminal 11p via the second wiring pattern 1b.

By electrically connecting the components using the first wiring pattern 1a and the second wiring pattern 1b formed on the printed substrate 1 in this way, the first wiring pattern 1a and the second wiring pattern 1b are used. Compared to the case where only one of the components is electrically connected, the length of the current path through which the current that changes with the switching operation of the power modules 11, 12, and 13 flows is shorter, and the value of the wiring impedance. Can be made smaller. The current path corresponds to the wiring pattern constituting the positive electrode side DC bus 9a and the negative electrode side DC bus 9b shown in FIG. For example, the wiring pattern from the power side terminal 11p to the snubber capacitor 51, the wiring pattern from the power side terminal 12p to the snubber capacitor 52, the wiring pattern from the power side terminal 13p to the snubber capacitor 53, and the power side shown in FIG. The wiring pattern from the terminal 11p to the smoothing capacitor 41, the wiring pattern from the power side terminal 12p to the smoothing capacitors 42, 43, and the wiring pattern from the power side terminal 13p to the smoothing capacitor 43 are the power modules 11, 12, 13 Corresponds to the current path through which the current that changes with the switching operation of.

Although semiconductor switching elements made of wide bandgap semiconductors are used in the power modules 11, 12, and 13 of the first embodiment, the semiconductor switching elements are limited to those made of wide bandgap semiconductors. However, it may be composed of a silicon semiconductor. However, in a semiconductor switching element composed of a wide bandgap semiconductor, the voltage change rate and the current change rate during switch operation are high, so that the effect of suppressing the surge voltage generated in the wiring impedance is even more remarkable.

As described above, in the power conversion device 10-1 according to the first embodiment, the snubber capacitors 51, 52, between the smoothing capacitors 41, 42, 43 and the power side terminals 11p of the power modules 11, 12, 13 Since 53 is provided, the length of the wiring pattern between the power side terminals 11p, 12p, 13p of the power modules 11, 12, 13 and the snubber capacitors 51, 52, 53 is shortened, which is caused by the parasitic inductance. The value of the surge voltage generated is reduced, the failure of the semiconductor element is suppressed, and the radio wave noise is suppressed. Further, even when the power modules 11, 12, and 13 having the semiconductor switching element composed of the wide bandgap semiconductor are used, in the power conversion device 10-1, the surge voltage generated due to the parasitic inductance of the wiring pattern The value of is small, stable operation of the semiconductor element can be realized, generation of radio noise is suppressed, and deterioration of the semiconductor element due to surge voltage is suppressed.

Embodiment 2.
FIG. 6 is a diagram showing a printed circuit board included in the power conversion device according to the second embodiment and a group of parts provided on the printed circuit board. In the power conversion device 10-2 according to the second embodiment, the three power modules 11, 12, and 13 are arranged so as to surround the capacitor group composed of the three snubber capacitors 51, 52, and 53. .. Specifically, the smoothing capacitors 41, 42, and 43 are provided so as to be separated from each other in the order of the smoothing capacitor 41, the smoothing capacitor 42, and the smoothing capacitor 43 in the X-axis direction. The power module 11, the snubber capacitor 51, the snubber capacitor 52, the snubber capacitor 53, and the power module 13 are separated from each other in the order of the power module 11, the snubber capacitor 51, the snubber capacitor 52, the snubber capacitor 53, and the power module 13 in the X-axis direction. Is provided. The smoothing capacitor 42, the snubber capacitor 52, and the power module 12 are provided apart from each other in the order of the smoothing capacitor 42, the snubber capacitor 52, and the power module 12 in the Y-axis direction.

A power side terminal 11p is provided between the package 11pkg of the power module 11 and the snubber capacitor 51. A power side terminal 12p is provided between the package 12pkg of the power module 12 and the snubber capacitor 52. A power side terminal 13p is provided between the package 13pkg of the power module 13 and the snubber capacitor 53. The control side terminal 11s of the power module 11 is provided on the side opposite to the power side terminal 11p in the X-axis direction of the power module 11. The control side terminal 12s of the power module 12 is provided on the side opposite to the power side terminal 12p in the Y-axis direction of the power module 12. The control side terminal 13s of the power module 13 is provided on the side opposite to the power side terminal 13p in the X-axis direction of the power module 13.

With such an arrangement, the distance between the power module 11 and the snubber capacitor 51, the distance between the power module 12 and the snubber capacitor 52, and the distance between the power module 13 and the snubber capacitor 53 are shortened. The distance between the snubber capacitors 51, 52, and 53 can also be shortened. In the second embodiment, since the path of the current passing between the power modules 11, 12, and 13 can be reduced, leakage of high frequency noise to the outside can be suppressed.

Further, in the power conversion device 10-2 according to the second embodiment, since the distance between the snubber capacitors 51, 52, and 53 is short, if the capacitance required for surge suppression can be satisfied, the snubber capacitors 51, 52, 53 can be used. It is also possible to change the number. Further, by arranging the snubber capacitors 51, 52, and 53 as shown in FIG. 6, an effect equivalent to the effect described in the first embodiment can be obtained. Details will be omitted as they will be repeated.

The snubber capacitors 51, 52, and 53 of the first and second embodiments may be replaced with a series circuit of the capacitor and the resistor. It is assumed that this series circuit is configured so that the surge voltage and the switching waveform associated with the switching of the power modules 11, 12, and 13 become desired values. The method of arranging the parts group on the printed circuit board 1 described in the first and second embodiments has the same effect when the power conversion devices 10-1 and 10-2 are used as the inverter device. Further, in the first and second embodiments, the configuration examples when the quantities of the snubber capacitors 51, 52, 53 and the smoothing capacitors 41, 42, 43 are equal to the quantities of the power modules 11, 12, 13 have been described. The quantity may be changed according to the capacity of the load connected to the power converters 10-1 and 10-2 and the application of the power converters 10-1 and 10-2. Further, in the first and second embodiments, a configuration example in which three sets of semiconductor switching element pairs built in the three power modules 11, 12, and 13 are arranged in parallel is described, but if the number of parallel power modules is 2 or more, A similar effect can be obtained.

Further, in the power conversion device according to the present embodiment, the output terminals connected to the connection points of the two semiconductor switching elements constituting each of the plurality of semiconductor switching element pairs are connected to each other, and the plurality of semiconductor switching element pairs are connected. among them, the smoothing capacitor positive multiple connected semiconductor switching element oN / oFF drive at the same timing, the plurality of semiconductor switching element pairs, a plurality of semiconductor switching elements connected to the negative side of the smoothing capacitor It may be configured to drive on / off at the same timing. By configuring and driving in this way, it is possible to realize a semiconductor switching element having a large current capacity at a low cost with a plurality of semiconductor switching elements having a small current capacity.

The configuration shown in the above-described embodiment shows an example of the content of the present invention, can be combined with another known technique, and is one of the configurations without departing from the gist of the present invention. It is also possible to omit or change the part.

1 Printed board, 1a 1st wiring pattern, 1b 2nd wiring pattern, 2 Converter reactor, 3 Input capacitor, 4, 5 Filter reactor, 6 Filter capacitor, 7 DC power supply, 8 DC power input section, 9a Positive current side DC Bus, 9b DC bus on the negative side, 10 housings, 10-1,10-2 Power converter, 11,12,13 power module, 11A area, 11H1,11H2,11H3,11L1,11L2,11L3 semiconductor switching element, 11a Upper switch drive circuit, 11b lower switch drive circuit, 11c positive terminal, 11d1, 11d2, 11d3 lower switch control terminal, 11e1, 11e2, 11e3, 61, 62,63 output terminal, 11n negative terminal, 11p, 12p , 13p power side terminal, 11pkg, 12pkg, 13pkg package, 11s, 12s, 13s control side terminal, 11u1, 11u2, 11u3 upper switch control terminal, 14 AC power output unit, 20 virtual line, 41, 42, 43 smoothing capacitor, 51, 52, 53 Snubber capacitor, 61a terminal, 71, 72, 73, 74, 81, 82, 83, 84, 91, 92, 93, 94 Parasitic inductance, 101 screws, 102 lead wires, 110 converter, 120 inverter, 130 Control unit.

Claims (7)

Printed circuit board and
A plurality of power modules provided on the printed circuit board and
The snubber capacitor provided on the printed circuit board and
A smoothing capacitor provided on the printed circuit board,
With
The power module includes a package having a semiconductor switching element, a power side terminal provided in the package, and a control side terminal provided in the package.
The distance from the power side terminal to the snubber capacitor is shorter than the distance from the control side terminal to the snubber capacitor.
The printed circuit board has a plurality of wiring layers and has a plurality of wiring layers.
The positive and negative terminals of the smoothing capacitor are wired to each other using different layers in the plurality of wiring layers, and are also wired to the power side terminals .
The power module includes a plurality of semiconductor switching element pairs of the two semiconductor switching elements connected in series.
One end of each of the plurality of semiconductor switching element pairs is connected to the positive side of the smoothing capacitor.
The other end of each of the plurality of semiconductor switching element pairs is connected to the negative side of the smoothing capacitor.
The power side terminal includes an output terminal connected to a connection point of the two semiconductor switching elements connected in series.
The output terminals connected to the connection points of the two semiconductor switching elements constituting each of the plurality of semiconductor switching element pairs are connected to each other.
Among the plurality of semiconductor switching element pairs, the plurality of semiconductor switching elements connected to the positive side of the smoothing capacitor are driven on / off at the same timing.
A power conversion device characterized in that a plurality of the semiconductor switching elements connected to the negative side of the smoothing capacitor among the plurality of semiconductor switching element pairs are driven on / off at the same timing. The plurality of power modules arranged in a row are provided in parallel with the snubber capacitors arranged in a row.
The power conversion device according to claim 1, wherein the power side terminals of the plurality of power modules arranged in a row are arranged in a straight line. Printed circuit board and
A plurality of power modules provided on the printed circuit board and
The snubber capacitor provided on the printed circuit board and
A smoothing capacitor provided on the printed circuit board
With
The power module includes a package having a semiconductor switching element, a power side terminal provided in the package, and a control side terminal provided in the package.
The distance from the power side terminal to the snubber capacitor is shorter than the distance from the control side terminal to the snubber capacitor.
The printed circuit board has a plurality of wiring layers and has a plurality of wiring layers.
The positive and negative terminals of the smoothing capacitor are wired to each other using different layers in the plurality of wiring layers, and are also wired to the power side terminals.
The plurality of power modules arranged in a row are provided in parallel with the snubber capacitors arranged in a row.
Each of the power-side terminal, to that power conversion apparatus characterized by being arranged in a straight line of the plurality of power modules arranged in a row. Printed circuit board and
A first power module, a second power module, and a third power module provided on the second main surface of the printed circuit board.
A first snubber capacitor, a second snubber capacitor, and a third snubber capacitor provided on the first main surface of the printed circuit board.
A plurality of smoothing capacitors provided on the first main surface of the printed circuit board, and
With
Each of the first power module, the second power module, and the third power module has a package having a semiconductor switching element, a power side terminal provided on one side of the package, and the other of the package. Equipped with a control side terminal provided on the side,
The printed circuit board has a plurality of wiring layers and has a plurality of wiring layers.
The positive and negative terminals of the smoothing capacitor are wired to each other using different layers in the plurality of wiring layers, and are also wired to the power side terminals.
The first power module, the third power module, the first snubber capacitor, the second snubber capacitor, and the third snubber capacitor are the first power module and the first snubber capacitor. , The second snubber capacitor, the third snubber capacitor, and the third power module in this order, from the first side, which is one side of the printed circuit board, to one side of the printed circuit board, which is perpendicular to the first side. They are arranged in a line along the direction parallel to the second side up to the third side facing the first side.
In the second power module, the power side terminal of the second power module is arranged between the package of the second power module and the second snubber capacitor, and the second snubber capacitor and the second snubber capacitor. It is arranged between the second snubber capacitor and the second side so as to face each other.
The first power module is such that the power side terminal of the first power module is arranged between the package of the first power module and the first snubber capacitor. It is placed between the snubber capacitor and the first side of the
The third power module is such that the power side terminal of the third power module is arranged between the package of the third power module and the third snubber capacitor. be that power converter characterized in that it is disposed between the snubber capacitor and the third side of the. Printed circuit board and
A plurality of power modules provided on the printed circuit board and
The snubber capacitor provided on the printed circuit board and
A smoothing capacitor provided on the printed circuit board
With
The power module includes a package having a semiconductor switching element, a power side terminal provided in the package, and a control side terminal provided in the package.
The distance from the power side terminal to the snubber capacitor is shorter than the distance from the control side terminal to the snubber capacitor.
The printed circuit board has a plurality of wiring layers and has a plurality of wiring layers.
The positive and negative terminals of the smoothing capacitor are wired to each other using different layers in the plurality of wiring layers, and are also wired to the power side terminals.
It has an output terminal that is electrically connected to the power side terminal.
The output terminal is provided on one plate surface side of the printed circuit board.
The power module is provided on the other plate surface side of the printed circuit board.
Said output terminal, said you wherein power conversion device that is provided with a power module to the made by projecting toward the printed circuit board area. The power module includes a plurality of semiconductor switching element pairs of the two semiconductor switching elements connected in series.
One end of each of the plurality of semiconductor switching element pairs is connected to the positive side of the smoothing capacitor.
The other end of each of the plurality of semiconductor switching element pairs is connected to the negative side of the smoothing capacitor.
The power conversion device according to claim 5, wherein the power side terminal includes an output terminal connected to a connection point of the two semiconductor switching elements connected in series. The power conversion device according to any one of claims 1 to 4 , wherein the semiconductor switching element is composed of a wide bandgap semiconductor.

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