JP6846303B2 - Grinding equipment and grinding method - Google Patents

Grinding equipment and grinding method Download PDF

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JP6846303B2
JP6846303B2 JP2017129278A JP2017129278A JP6846303B2 JP 6846303 B2 JP6846303 B2 JP 6846303B2 JP 2017129278 A JP2017129278 A JP 2017129278A JP 2017129278 A JP2017129278 A JP 2017129278A JP 6846303 B2 JP6846303 B2 JP 6846303B2
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susceptor
grinding
main surface
base
grinding member
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JP2019012786A (en
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啓介 深田
啓介 深田
直人 石橋
直人 石橋
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Showa Denko KK
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/033Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10Single-purpose machines or devices
    • B24B7/18Single-purpose machines or devices for grinding floorings, walls, ceilings or the like
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Description

本発明は、成膜室の内壁に堆積した堆積物の研削に用いる、研削装置および研削方法に関する。 The present invention relates to a grinding apparatus and a grinding method used for grinding deposits deposited on the inner wall of a film forming chamber.

半導体材料である炭化珪素(SiC)は、現在広くデバイス用基板として使用されているSi(珪素)に比べてバンドギャップが広いことから、単結晶SiC基板を使用してパワーデバイス、高周波デバイス、高温動作デバイス等を作製する研究が行われている。 Silicon carbide (SiC), which is a semiconductor material, has a wider bandgap than Si (silicon), which is currently widely used as a device substrate. Therefore, a single crystal SiC substrate is used for power devices, high-frequency devices, and high temperature. Research is being conducted to manufacture operating devices and the like.

炭化珪素の単結晶膜を成膜する方法としては、化学気相堆積法(Chemical Vapor Deposition法;CVD法)を用いて、C含有ガス(プロパンガス等)とSi含有ガス(シランガス等)との化学反応により、炭化珪素の単結晶膜を成長させる方法や、モノメチルシランをCVD法の原料として炭化珪素の単結晶膜を成長させる方法が知られている。 As a method for forming a single crystal film of silicon carbide, a chemical vapor deposition method (CVD method) is used to combine a C-containing gas (propane gas or the like) and a Si-containing gas (silane gas or the like). A method of growing a silicon carbide single crystal film by a chemical reaction and a method of growing a silicon carbide single crystal film using monomethylsilane as a raw material for a CVD method are known.

ところが、CVD法を用いた場合、反応容器の内壁にも炭化珪素が付着し、堆積してしまう。内壁に堆積した炭化珪素の微粒子(SiC堆積物)は、剥離、脱落し、炭化珪素薄膜の成長表面に落下付着し、結晶成長を阻害したり、欠陥を生じさせたりする原因となる。そのため、成膜室の内壁に堆積したSiC堆積物を定期的に取り除く必要がある。SiC堆積物の除去方法としては、従来、炭化珪素が成膜室の内壁に堆積した場合には、エピタキシャル成長工程の合間の停止期間に、工具を用いて削り取る方法、成膜室の壁を定期的に交換する方法等が採用されている。 However, when the CVD method is used, silicon carbide also adheres to and accumulates on the inner wall of the reaction vessel. The silicon carbide fine particles (SiC deposits) deposited on the inner wall peel off and fall off, and fall and adhere to the growth surface of the silicon carbide thin film, which causes crystal growth to be inhibited or defects to occur. Therefore, it is necessary to periodically remove the SiC deposits deposited on the inner wall of the film forming chamber. Conventionally, when silicon carbide is deposited on the inner wall of the film forming chamber, the method of removing the SiC deposit is a method of scraping off with a tool during the stop period between the epitaxial growth steps, and the wall of the film forming chamber is regularly removed. The method of exchanging with is adopted.

堆積した炭化珪素の手作業による研削や成膜室の壁の交換は、極めて長い作業時間を要し、また成膜室を長期間にわたって大気開放することになるため、歩留りが低下するなどして生産性に悪影響を及ぼすことが懸念されている。 Manual grinding of the deposited silicon carbide and replacement of the wall of the film forming chamber require an extremely long working time, and the film forming chamber is open to the atmosphere for a long period of time, resulting in a decrease in yield. There is concern that it will adversely affect productivity.

そのため、装置を開放することなく堆積した炭化珪素付着物を除去する方法としては、化学的に除去するクリーニング方法があり、種々のエッチングガスを用いる方法が提案されている。(特許文献1)。しかし、エッチングガスは反応性が高いので、反応容器内の部材を損傷したり、またガスの成分が残存して汚染の原因になるなどの問題がある。 Therefore, as a method for removing the deposited silicon carbide deposits without opening the apparatus, there is a cleaning method for chemically removing the deposits, and a method using various etching gases has been proposed. (Patent Document 1). However, since the etching gas is highly reactive, there are problems such as damage to the members in the reaction vessel and residual gas components causing contamination.

特開2014−154865号公報JP-A-2014-154865

本発明は、かかる事情に鑑みてなされたものであり、成膜室の内壁に堆積した堆積物を、エッチングガスを使用せずに、成膜室を開放することなく、短時間で除去することを可能とする研削装置および研削方法を提供することを目的とする。 The present invention has been made in view of such circumstances, and removes the deposits deposited on the inner wall of the film forming chamber in a short time without using an etching gas and without opening the film forming chamber. It is an object of the present invention to provide a grinding device and a grinding method that enable the above.

上記課題を解決するため、本発明は以下の手段を採用している。 In order to solve the above problems, the present invention employs the following means.

(1)本発明の一態様に係る研削装置は、成膜室内に配される被成膜基板用のサセプタと、平板状の基部とその表面に形成された凸部とで構成される研削部材と、前記研削部材を、前記サセプタに載置されるように搬送する搬送手段と、前記サセプタを中心軸の周りに回転させる回転手段と、を有し、前記基部の片方の主面が前記サセプタと対向するように、前記研削部材が前記サセプタに載置された状態において、前記サセプタおよび前記研削部材を平面視した場合に、前記研削部材の最外周部が、前記サセプタの最外周部の外側にある。 (1) The grinding apparatus according to one aspect of the present invention is a grinding member composed of a susceptor for a substrate to be deposited, which is arranged in a film forming chamber, a flat plate-shaped base portion, and a convex portion formed on the surface thereof. A transport means for transporting the grinding member so as to be mounted on the susceptor, and a rotating means for rotating the susceptor around a central axis, and one main surface of the base portion is the susceptor. When the susceptor and the grinding member are viewed in a plan view in a state where the grinding member is placed on the susceptor so as to face the grinding member, the outermost peripheral portion of the grinding member is outside the outermost peripheral portion of the susceptor. It is in.

(2)前記(1)に記載の研削装置において、前記凸部が、前記基部の少なくとも一方の主面の外周部に1つ以上形成されていることが好ましい。 (2) In the grinding apparatus according to (1), it is preferable that one or more convex portions are formed on the outer peripheral portion of at least one main surface of the base portion.

(3)前記(1)または(2)のいずれかに記載の研削装置において、前記凸部が、前記基部の側面に1つ以上形成されていることが好ましい。 (3) In the grinding apparatus according to any one of (1) or (2), it is preferable that one or more of the convex portions are formed on the side surface of the base portion.

(4)前記(1)〜(3)のいずれか一つに記載の研削装置において、前記凸部が、前記基部の他の片方の主面において、外周部以外の部分に形成されていることが好ましい。 (4) In the grinding apparatus according to any one of (1) to (3), the convex portion is formed on a portion other than the outer peripheral portion on the other main surface of the base portion. Is preferable.

(5)前記(1)〜(4)のいずれか一つに記載の研削装置において、前記基部の片方の主面の外周部に形成された凸部、前記基部の他の片方の主面に形成された凸部、前記基部の側面に形成された凸部のうち、少なくとも1つが、前記基部の外周部に沿って隙間なく並んでいることが好ましい。 (5) In the grinding apparatus according to any one of (1) to (4), the convex portion formed on the outer peripheral portion of one main surface of the base portion and the other main surface of the base portion. It is preferable that at least one of the formed convex portion and the convex portion formed on the side surface of the base portion is arranged without a gap along the outer peripheral portion of the base portion.

(6)前記(1)〜(5)のいずれか一つに記載の研削装置において、前記サセプタまたは前記成膜室の側壁を、前記サセプタの中心軸に平行な方向に駆動させる駆動手段を、さらに有していることが好ましい。 (6) In the grinding apparatus according to any one of (1) to (5), a driving means for driving the susceptor or the side wall of the film forming chamber in a direction parallel to the central axis of the susceptor is provided. It is preferable to have more.

(7)前記(1)〜(6)のいずれか一つに記載の研削装置において、前記研削部材が、前記基部の主面に平行に広がる構造を有していることが好ましい。 (7) In the grinding apparatus according to any one of (1) to (6), it is preferable that the grinding member has a structure extending parallel to the main surface of the base portion.

(8)本発明の一態様に係る研削方法は、前記(1)〜(7)のいずれか一つに記載の研削装置を用いた研削方法であって、基板への成膜処理を行う前または後に、前記搬送手段を用いて、前記研削部材を前記サセプタに載置する工程と、前記回転手段を用いて、前記サセプタまたは前記成膜室の側壁を、前記サセプタの中心軸の周りに回転させる工程と、を有している。 (8) The grinding method according to one aspect of the present invention is the grinding method using the grinding device according to any one of (1) to (7) above, and is before the film forming process on the substrate is performed. Alternatively, later, using the transport means, the step of mounting the grinding member on the susceptor, and using the rotating means, the susceptor or the side wall of the film forming chamber is rotated around the central axis of the susceptor. It has a process of making it.

(9)前記(8)に記載の研削方法において、駆動手段を用いて、前記サセプタまたは前記成膜室の側壁を、前記サセプタの中心軸に平行な方向に駆動させる工程を、さらに有していることが好ましい。 (9) In the grinding method according to (8) above, the grinding method further includes a step of driving the susceptor or the side wall of the film forming chamber in a direction parallel to the central axis of the susceptor by using a driving means. It is preferable to have.

本発明の研削装置および研削方法によれば、サセプタとともに研削部材を回転させることにより、研削部材の外周部に形成された凸部を、成膜室の内壁に堆積した堆積物に衝突させ、凸部に発生する回転力を利用してこの堆積物を研削することができる。したがって、極めて長い作業時間を要する手作業での堆積物の研削、成膜室の壁の交換等の作業が不要となり、その結果として、成膜室を長期間にわたって大気開放する必要がなくなるため、歩留り低下等の生産性に関する問題発生を回避することができる。 According to the grinding device and the grinding method of the present invention, by rotating the grinding member together with the susceptor, the convex portion formed on the outer peripheral portion of the grinding member is made to collide with the deposit deposited on the inner wall of the film forming chamber, and the convex portion is formed. This deposit can be ground by utilizing the rotational force generated in the part. Therefore, it is not necessary to manually grind the sediment and replace the wall of the film forming chamber, which requires an extremely long working time, and as a result, it is not necessary to open the film forming chamber to the atmosphere for a long period of time. It is possible to avoid the occurrence of productivity problems such as a decrease in yield.

本発明の一実施形態に係る研削装置を備えた、成膜装置の縦断面図である。It is a vertical sectional view of the film forming apparatus provided with the grinding apparatus which concerns on one Embodiment of this invention. (a)〜(f)図1の研削装置が有する、研削部材の構成例を示す上面図および側面図である。It is a top view and a side view which show the structural example of the grinding member which the grinding apparatus of FIG. 1 has (a)-(f). (a)〜(d)図1の研削装置が有する、研削部材の他の構成例を示す上面図および側面図である。(A) to (d) are a top view and a side view showing another configuration example of a grinding member included in the grinding apparatus of FIG. 1. 図1の研削装置が有する研削部材の側面図である。It is a side view of the grinding member which the grinding apparatus of FIG. 1 has.

以下、本発明について、図を適宜参照しながら詳細に説明する。以下の説明で用いる図は、本発明の特徴を分かりやすくするために、便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率等は実際とは異なっていることがある。また、以下の説明において例示される材料、寸法等は一例であって、本発明はそれらに限定されるものではなく、本発明の効果を奏する範囲で適宜変更して実施することが可能である。 Hereinafter, the present invention will be described in detail with reference to the drawings as appropriate. In the drawings used in the following description, in order to make the features of the present invention easy to understand, the featured portions may be enlarged for convenience, and the dimensional ratios of each component may differ from the actual ones. There is. Further, the materials, dimensions, etc. exemplified in the following description are examples, and the present invention is not limited thereto, and can be appropriately modified and carried out within the range in which the effects of the present invention are exhibited. ..

[研削装置の構成]
図1は、本発明の一実施形態に係る研削装置100を備えた、成膜装置10の縦断面図であり、成膜処理等に伴って発生する炭化珪素等の堆積物(デポ物)Dが、成膜室11の内壁11aに堆積した状態を示している。研削装置100は、成膜室11内に配される被成膜基板用のサセプタ101と、研削部材102と、研削部材102を搬送する搬送手段103と、サセプタ101を中心軸101cの周りに回転させる回転手段104と、を有している。
[Structure of grinding equipment]
FIG. 1 is a vertical cross-sectional view of the film forming apparatus 10 provided with the grinding apparatus 100 according to the embodiment of the present invention, and is a deposit (depot) D of silicon carbide or the like generated by the film forming process or the like. However, it shows a state of being deposited on the inner wall 11a of the film forming chamber 11. The grinding apparatus 100 rotates the susceptor 101 for the substrate to be deposited, the grinding member 102, the conveying means 103 for transporting the grinding member 102, and the susceptor 101 around the central axis 101c arranged in the film forming chamber 11. It has a rotating means 104 to be made to rotate.

本発明においてサセプタとは、成膜を行う時に基板を支える部材を意味している。本発明のサセプタは、基板に直接接して支える部材であってもよいし、基板を台座に載せて搬送する場合の様に、基板に直接接する部材を支える部材であってもよい。 In the present invention, the susceptor means a member that supports a substrate when forming a film. The susceptor of the present invention may be a member that directly contacts and supports the substrate, or may be a member that supports the member that directly contacts the substrate, such as when the substrate is placed on a pedestal and transported.

研削部材102は、少なくとも成膜室11の内壁に堆積する堆積物(SiC堆積物等)Dと接触した時に、破損しない強度を有するものであればよい。堆積物Dは炭化珪素を主体とするものであるが、細かい多結晶が析出凝固したものであり、機械的な衝撃に対してはもろいという性質がある。炭化珪素自体は硬度の高い物質であるが、それよりも低い硬度であっても、前記の性質を有するCVD法の堆積物への機械的な衝撃に対して破損しない程度に強ければ使用可能である。また、一部摩耗しても汚染源とはならないように、高純度であることが望ましい。そのような材料としては、例えば、TaCコートカーボン、SiCコートカーボン、NbCコートカーボン、WCコートカーボン、TaC、SiC、NbC、WC、その他の金属炭化物、ダイヤモンド、SiO等を挙げることができる。 The grinding member 102 may have a strength that does not damage at least when it comes into contact with a deposit (SiC deposit or the like) D deposited on the inner wall of the film forming chamber 11. The deposit D is mainly composed of silicon carbide, but it is formed by precipitating and solidifying fine polycrystals, and has a property of being fragile to mechanical impact. Silicon carbide itself is a substance with high hardness, but even if it has a hardness lower than that, it can be used as long as it is strong enough not to be damaged by mechanical impact on the deposition of the CVD method having the above-mentioned properties. is there. In addition, it is desirable to have high purity so that even if it is partially worn, it does not become a source of pollution. Examples of such a material include TaC-coated carbon, SiC-coated carbon, NbC-coated carbon, WC-coated carbon, TaC, SiC, NbC, WC, other metal carbides, diamond, SiO 2, and the like.

研削部材102は、平板状(好ましくは円板状)の基部(基材)102Aと、その表面に形成された凸部(突起部)102Bとで構成されている。基部102Aの主面の面積は、サセプタ101の基板載置面101aの面積より大きい。凸部102Bのサイズについては特に限定されないが、その先端部分が、少なくとも堆積物Dに接する位置まで延在しているものとする。 The grinding member 102 is composed of a flat plate-shaped (preferably disk-shaped) base portion (base material) 102A and a convex portion (projection portion) 102B formed on the surface thereof. The area of the main surface of the base 102A is larger than the area of the substrate mounting surface 101a of the susceptor 101. The size of the convex portion 102B is not particularly limited, but it is assumed that the tip portion thereof extends at least to a position in contact with the deposit D.

凸部102Bは、基部102Aの表面に対して、垂直に突出する形状であってもよいし、斜めに突出する形状であってもよいし、屈曲部、湾曲部を有する形状であってもよい。また、凸部102Bは、長手方向において断面積が一定の形状(角柱、円柱等)、断面積が増減する形状(角錐、円錐、角錐台、円錐台等)のいずれを有していてもよい。 The convex portion 102B may have a shape that protrudes vertically with respect to the surface of the base portion 102A, a shape that protrudes diagonally, or a shape that has a bent portion and a curved portion. .. Further, the convex portion 102B may have either a shape having a constant cross-sectional area in the longitudinal direction (prism, cylinder, etc.) or a shape in which the cross-sectional area increases or decreases (pyramid, cone, truncated cone, truncated cone, etc.). ..

研削装置100を動作させた状態、すなわちサセプタ101とともに研削部材102を回転させた状態において、研削部材102は、その基部102Aの片方の主面がサセプタ101と対向するように、サセプタ101上に載置される。この状態で、サセプタ101および研削部材102を平面視した場合には、研削部材102の最外周部が、サセプタの最外周部の外側にある。つまり、同平面視において、研削部材102はサセプタ101より大きい。 In the state where the grinding device 100 is operated, that is, when the grinding member 102 is rotated together with the susceptor 101, the grinding member 102 is placed on the susceptor 101 so that one main surface of the base 102A faces the susceptor 101. Placed. When the susceptor 101 and the grinding member 102 are viewed in a plan view in this state, the outermost peripheral portion of the grinding member 102 is outside the outermost peripheral portion of the susceptor. That is, in the same plan view, the grinding member 102 is larger than the susceptor 101.

また、研削部材102は、動作状態において回転半径が大きくなるように、基部102Aの主面に平行であって回転中心から離れる方向に、放射状に広がる構造を有していることが好ましい。このような構造であれば、例えば、研削部材102の搬送時には回転半径を小さくして堆積物Dに当接(接触)しない状態とし、回転時になってから回転半径を大きくして堆積物Dに当接する状態とすることができる。この場合、搬送時に堆積物Dが研削されることはないため、研削された堆積物Dが搬送アームに再付着するのを回避することができる。研削部材102を放射状に広げる構造としては、例えば、回転する凸部102Bが、慣性によって回転中心から離れる方向に広がる性質を利用した構造が挙げられる。 Further, it is preferable that the grinding member 102 has a structure that is parallel to the main surface of the base portion 102A and radially spreads in a direction away from the center of rotation so that the radius of gyration becomes large in the operating state. With such a structure, for example, the radius of gyration is reduced during transportation of the grinding member 102 so as not to abut (contact) with the deposit D, and the radius of gyration is increased during rotation to form the deposit D. It can be in a state of contact. In this case, since the sediment D is not ground during transportation, it is possible to prevent the ground sediment D from reattaching to the transport arm. Examples of the structure for radially expanding the grinding member 102 include a structure utilizing the property that the rotating convex portion 102B expands in the direction away from the center of rotation due to inertia.

搬送手段103による研削部材102の搬送方式について、特に限定されることはないが、例えば図1に示すように、基部102Aの主面の中央部を搬送用のアーム103Aで下側から支持しつつ、このアーム103Aを屈曲、伸縮、回転等させて行う方式が挙げられる。この方式を用いる場合には、例えば図1に示すように、サセプタ101の表面(研削部材102の載置面)に、アーム103Aが通るための凹部101Aが形成されていることが好ましい。 The method of transporting the grinding member 102 by the transporting means 103 is not particularly limited, but as shown in FIG. 1, for example, while supporting the central portion of the main surface of the base portion 102A from below by the transporting arm 103A. , A method in which the arm 103A is bent, expanded / contracted, rotated, or the like can be mentioned. When this method is used, for example, as shown in FIG. 1, it is preferable that a recess 101A through which the arm 103A passes is formed on the surface of the susceptor 101 (the surface on which the grinding member 102 is placed).

成膜室11には、成膜空間に基板又は基板を載せた台座を成長空間に搬入するための搬入口(図示せず)が設けられている。そして、基板又は基板を載せた台座をサセプタ101上に搬送するための基板搬送機構(図示せず)が設けられている。この基板搬送機構と搬入口を研削部材の搬送手段として使用してもよい。また、基板の搬送機構とは別に搬送手段103が設けられていてもよい。 The film forming chamber 11 is provided with a carry-in entrance (not shown) for carrying the substrate or the pedestal on which the substrate is placed into the growth space in the film forming space. A substrate transfer mechanism (not shown) for transporting the substrate or the pedestal on which the substrate is placed onto the susceptor 101 is provided. The substrate transfer mechanism and the carry-in inlet may be used as a transfer means for the grinding member. Further, the transfer means 103 may be provided separately from the transfer mechanism of the substrate.

なお、研削部材102の搬送時における基部102Aの支持を、基部102Aの外周部を厚み方向において両側から挟んで行う場合には、凹部101Aを設ける必要がないため、研削部材102ををより広い面で支持することになり、サセプタ101に対して研削部材102をより強く固定することができる。 When supporting the base 102A during transportation of the grinding member 102 by sandwiching the outer peripheral portion of the base 102A from both sides in the thickness direction, it is not necessary to provide the recess 101A, so that the grinding member 102 has a wider surface. The grinding member 102 can be more strongly fixed to the susceptor 101.

回転手段104によるサセプタ101および研削部材102の回転方式についても、特に限定されることはないが、例えば図1に示すように、サセプタ101の中心部分の下側に取り付けられた棒状部材104Aをその中心軸101cの周りに回転させる方式が挙げられる。 The rotation method of the susceptor 101 and the grinding member 102 by the rotating means 104 is also not particularly limited, but for example, as shown in FIG. 1, a rod-shaped member 104A attached to the lower side of the central portion of the susceptor 101 is used. A method of rotating around the central axis 101c can be mentioned.

成膜装置10には、基板又は基板を載せた台座を回転させるために、サセプタ101を回転させる機構が付いている。このサセプタ回転機構を回転手段104としてもよい。また、同心円状の別の回転軸を設けるなどして、別の回転機構を回転手段104としてもよい。 The film forming apparatus 10 is provided with a mechanism for rotating the substrate or the susceptor 101 in order to rotate the pedestal on which the substrate is placed. This susceptor rotation mechanism may be used as the rotation means 104. Further, another rotating mechanism may be used as the rotating means 104 by providing another concentric rotating shaft.

研削部材102に対してサセプタ101の回転力を無駄なく伝えるため、研削部材102は、サセプタ101に対して強く固定されていることが好ましい。その為に、研削部材102は、接触部分で滑らない程度の重量を有していたり、サセプタ101との接触部分が粗面になっていることが好ましい。あるいは、研削部材102、サセプタ101のそれぞれの対向する位置に、凹凸構造を設けて互いに嵌め込む(嵌合する)方式も挙げられる。また、固定方式として、静電チャックを用いて、研削部材の基部102Aをサセプタ101に吸着させてもよい。 In order to transmit the rotational force of the susceptor 101 to the grinding member 102 without waste, it is preferable that the grinding member 102 is strongly fixed to the susceptor 101. Therefore, it is preferable that the grinding member 102 has a weight that does not slip at the contact portion, or the contact portion with the susceptor 101 has a rough surface. Alternatively, there is also a method in which a concavo-convex structure is provided at the opposite positions of the grinding member 102 and the susceptor 101 to fit (fit) each other. Further, as a fixing method, the base portion 102A of the grinding member may be attracted to the susceptor 101 by using an electrostatic chuck.

研削装置100は、サセプタ101または成膜室11の側壁を、サセプタの中心軸101cに略平行な方向(略鉛直方向)に駆動させる駆動手段(不図示)を、さらに有していることが好ましい。この場合、成膜室の天井部分11b、床部分11cに堆積した堆積物Dに対しても、回転させた凸部102Bを当接(衝突)させることができ、成膜室11の内壁全体にわたって、堆積物Dの研削を行うことが可能となる。 It is preferable that the grinding apparatus 100 further has a driving means (not shown) for driving the side wall of the susceptor 101 or the film forming chamber 11 in a direction substantially parallel to the central axis 101c of the susceptor (approximately vertical direction). .. In this case, the rotated convex portion 102B can be brought into contact (collision) with the deposit D deposited on the ceiling portion 11b and the floor portion 11c of the film forming chamber, and the entire inner wall of the film forming chamber 11 can be brought into contact with (collision). , It becomes possible to grind the deposit D.

成膜装置10には、基板又は基板を載せた台座を搬送のために上下させるサセプタ昇降機構が付いている。このサセプタ昇降機構を前記駆動手段として用いてもよい。また、可動範囲を変えるために、別の昇降機構を設けて前記駆動手段としてもよい。 The film forming apparatus 10 is provided with a susceptor elevating mechanism that raises and lowers the substrate or the pedestal on which the substrate is placed for transportation. This susceptor elevating mechanism may be used as the driving means. Further, in order to change the movable range, another elevating mechanism may be provided as the driving means.

凸部102Bは、研削部材102の回転動作状態において、堆積物Dに当接する部分となる。凸部102Bは、基部102Aの少なくとも一方の主面の外周部に、1つ以上形成されていることが好ましい。図1では、凸部102Bが、基部102Aの両方の主面の外周部から突出するものを例示しているが、凸部102Bの構成はこの例に限られない。凸部102Bの構成例について、図2、3に示す。 The convex portion 102B is a portion that comes into contact with the deposit D in the rotational operation state of the grinding member 102. It is preferable that one or more convex portions 102B are formed on the outer peripheral portion of at least one main surface of the base portion 102A. In FIG. 1, the convex portion 102B projects from the outer peripheral portions of both main surfaces of the base portion 102A, but the configuration of the convex portion 102B is not limited to this example. A configuration example of the convex portion 102B is shown in FIGS.

図2(a)〜(f)は、それぞれ、研削部材102の一方の主面側を平面視した形状(上側)、および研削部材102の凸部102Bを通る断面の形状(下側)を示す図である。ここでの研削部材102の一方の主面は、サセプタ101と対向する側(片方)の主面、その反対側(他の片方)の主面のいずれであってもよい。 2 (a) to 2 (f) show a shape (upper side) in which one main surface side of the grinding member 102 is viewed in a plan view, and a cross-sectional shape (lower side) passing through the convex portion 102B of the grinding member 102, respectively. It is a figure. Here, one main surface of the grinding member 102 may be either a main surface on the side (one side) facing the susceptor 101 or a main surface on the opposite side (the other side).

凸部102Bは、基部102Aのサセプタ101と対向する側の主面、その反対側の主面の一方または両方において、図2(a)に示すように外周部の一箇所のみに形成されていてもよいし、図2(b)に示すように複数個所に形成されていてもよい。複数個所に形成される場合、凸部102Bの質量を均等に分布させ、研削部材102の回転面(回転方向)を維持させる観点から、凸部102Bは基部102Aの外周に沿って等間隔で並んでいることが好ましい。 The convex portion 102B is formed on one or both of the main surface of the base 102A facing the susceptor 101 and the main surface on the opposite side, as shown in FIG. 2A, at only one outer peripheral portion. Alternatively, it may be formed at a plurality of locations as shown in FIG. 2 (b). When formed at a plurality of locations, the convex portions 102B are arranged at equal intervals along the outer circumference of the base portion 102A from the viewpoint of evenly distributing the mass of the convex portions 102B and maintaining the rotation surface (rotation direction) of the grinding member 102. It is preferable to be.

また、凸部102Bは、図2(c)に示すように先端が尖った形状(角錐、円錐等)を有するものであってもよいし、先端に近づくほど細くなる形状(角錐台、円錐台等)を有するものであってもよい。 Further, the convex portion 102B may have a shape with a sharp tip (pyramid, cone, etc.) as shown in FIG. 2C, or a shape that becomes thinner as it approaches the tip (pyramid, truncated cone, etc.). Etc.).

また、凸部102Bが複数個所に形成される場合には、図2(d)に示すように、それらを隙間なく並べ、連続した壁(円環)を形成してもよい。この壁の形状については特に限定されるものではないが、例えば、一様な厚さを有するものとしてもよいし、高さ方向において厚さが変わるものとしてもよい。 When the convex portions 102B are formed at a plurality of positions, they may be arranged without gaps to form a continuous wall (ring) as shown in FIG. 2 (d). The shape of the wall is not particularly limited, but for example, it may have a uniform thickness, or the thickness may change in the height direction.

研削装置100が上述した駆動手段を有している場合、凸部102Bは、図2(e)に示すように、基部102Aのサセプタ101と対向しない側の主面(他の片方の主面)において、外周部だけでなく、外周部以外の部分(中央部、中間部)にも形成されていることが好ましい。この場合には、研削部材102をあるいは成膜室11の側壁を、凸部102Bが天井部分11bに堆積した堆積物Dに当接する位置まで駆動させることによって、天井部分11bの堆積物Dをより広い範囲で研削することが可能となる。さらに、天井部分11bから研削された堆積物Dは、基部102A上に落下することになるため、搬送手段103を用いて、これを基部102A上に載せたまま回収することができる。 When the grinding device 100 has the driving means described above, the convex portion 102B has a main surface (the other main surface) on the side of the base 102A that does not face the susceptor 101, as shown in FIG. 2 (e). In the above, it is preferable that the film is formed not only on the outer peripheral portion but also on a portion other than the outer peripheral portion (central portion, intermediate portion). In this case, by driving the grinding member 102 or the side wall of the film forming chamber 11 to a position where the convex portion 102B abuts on the deposit D deposited on the ceiling portion 11b, the deposit D of the ceiling portion 11b is further driven. It is possible to grind in a wide range. Further, since the deposit D ground from the ceiling portion 11b will fall on the base portion 102A, it can be collected while being placed on the base portion 102A by using the transport means 103.

また、研削装置100が同駆動手段を有している場合、凸部102Bは、基部102Aのサセプタ101と対向する側の主面において、外周部や、サセプタ101と当接する部分(中央部)を除いた部分(中間部)にも形成されていることが好ましい。この場合には、研削部材102をあるいは成膜室11の側壁を、凸部102Bが床部分11cに堆積した堆積物Dに当接する位置まで駆動させることによって、床部分11cに堆積した堆積物Dを、より広い範囲で研削することが可能となる。 Further, when the grinding device 100 has the same driving means, the convex portion 102B has an outer peripheral portion and a portion (central portion) in contact with the susceptor 101 on the main surface of the base portion 102A on the side facing the susceptor 101. It is preferable that it is also formed in the removed portion (intermediate portion). In this case, by driving the grinding member 102 or the side wall of the film forming chamber 11 to a position where the convex portion 102B abuts on the deposit D deposited on the floor portion 11c, the deposit D deposited on the floor portion 11c. Can be ground in a wider range.

天井部分11bおよび床部分11cの堆積物Dを万遍なく研削するため、堆積している堆積物Dに対し、凸部102Bを万遍なく当接させる観点から、基部102Aの各主面に形成される凸部102Bは、図2(f)に示すようにランダムに分布しているのが好ましい。同じ観点から、例えば凸部102Bがスクリューを形成するように分布していれば、天井部分11bおよび床部分11cの全ての堆積物Dに対して、凸部102Bが確実に当接することになるため、より好ましい。 In order to evenly grind the deposit D of the ceiling portion 11b and the floor portion 11c, it is formed on each main surface of the base portion 102A from the viewpoint of evenly contacting the convex portion 102B with the deposited deposit D. The convex portions 102B to be formed are preferably randomly distributed as shown in FIG. 2 (f). From the same viewpoint, for example, if the convex portions 102B are distributed so as to form a screw, the convex portions 102B will surely come into contact with all the deposits D of the ceiling portion 11b and the floor portion 11c. , More preferred.

さらに、凸部102Bは、基部102Aの側面に1つ以上形成されていることが好ましく、例えば図3(a)に示すように、基部102Aの側面の一箇所のみに形成されていてもよいし、図3(b)に示すように複数個所に形成されていてもよい。凸部102Bが側面の複数個所に形成される場合には、図2(b)の場合と同様の観点から、基部102Aの外周に沿って等間隔で並んでいることが好ましい。また、凸部102Bは、図3(c)に示すように、先端が尖ったものであってもよい。また、凸部102Bが側面の複数個所に形成される場合には、図3(d)に示すように、それらを隙間なく並べ、連続した壁状(円環状)をなす形状としてもよい。 Further, it is preferable that one or more convex portions 102B are formed on the side surface of the base portion 102A, and for example, as shown in FIG. 3A, the convex portions 102B may be formed only at one position on the side surface of the base portion 102A. , As shown in FIG. 3 (b), it may be formed at a plurality of places. When the convex portions 102B are formed at a plurality of locations on the side surface, it is preferable that the convex portions 102B are arranged at equal intervals along the outer circumference of the base portion 102A from the same viewpoint as in the case of FIG. 2B. Further, as shown in FIG. 3C, the convex portion 102B may have a sharp tip. When the convex portions 102B are formed at a plurality of locations on the side surface, they may be arranged without gaps to form a continuous wall shape (annular ring) as shown in FIG. 3 (d).

図4は、研削部材102を基部102Aの厚み方向に切断した際の断面図であり、上述した構成を組み合わせた一例を示している。図4に示すように、凸部102Bは、サセプタ101と当接する部分102Aを除き、基部102Aの主面、側面の両方に形成されていてもよい。 FIG. 4 is a cross-sectional view when the grinding member 102 is cut in the thickness direction of the base portion 102A, and shows an example in which the above-described configurations are combined. As shown in FIG. 4, the convex portion 102B may be formed on both the main surface and the side surface of the base portion 102A except for the portion 102A 1 that abuts on the susceptor 101.

凸部102Bは、それぞれ複数の方向に分岐していてもよい。図4では、基部102Aの外周部に形成された凸部102Bが、分岐している例を示している。凸部102Bが分岐している場合、堆積部Dに当接する部分が増えることにより、堆積物Dの研削効果を高めることができる。 The convex portion 102B may be branched in a plurality of directions. FIG. 4 shows an example in which the convex portion 102B 1 formed on the outer peripheral portion of the base portion 102A is branched. When the convex portion 102B 1 is branched, the grinding effect of the deposit D can be enhanced by increasing the portion that comes into contact with the deposit portion D.

[堆積物の研削方法]
本実施形態に係る研削装置100を用いた、堆積物Dの研削方法の各工程について説明する。
[How to grind deposits]
Each step of the method of grinding the deposit D using the grinding device 100 according to the present embodiment will be described.

(第1工程)
まず、基板への成膜処理が行われていない状態(成膜処理の前後等)で、搬送手段103を用いて、研削部材102をサセプタ101に載置し、凹凸構造の嵌合方式等を用いて研削部材102を固定する。
(First step)
First, the grinding member 102 is placed on the susceptor 101 by using the transport means 103 in a state where the film formation process on the substrate has not been performed (before and after the film formation process, etc.), and a fitting method of an uneven structure or the like is performed. The grinding member 102 is fixed using.

(第2工程)
次に、回転手段104を用いて、サセプタ101または成膜室11の側壁を、サセプタの中心軸101cの周りに回転させる。このときの回転速度は、堆積物Dの除去に必要な回転力を発生させる程度、具体的には5〜1000rpm程度とすることが好ましい。回転数は、低速から徐々に高速にしてゆくことが好ましい。またこの時、回転駆動モーターの負荷をモニターしながら、回転数を制御することが好ましい。また、適宜、逆方向の回転を組み合わせることもできる。
(Second step)
Next, the rotating means 104 is used to rotate the side wall of the susceptor 101 or the film forming chamber 11 around the central axis 101c of the susceptor. The rotation speed at this time is preferably such that a rotational force required for removing the deposit D is generated, specifically, about 5 to 1000 rpm. It is preferable that the rotation speed is gradually increased from low speed. At this time, it is preferable to control the rotation speed while monitoring the load of the rotation drive motor. In addition, rotation in the opposite direction can be combined as appropriate.

(第3工程)
さらに、研削装置100が駆動手段を備えている場合には、これを用いて、サセプタ101または成膜室11の側壁を、サセプタの中心軸101cに略平行な方向に沿って駆動させる。
(Third step)
Further, when the grinding device 100 is provided with a driving means, the side wall of the susceptor 101 or the film forming chamber 11 is driven along a direction substantially parallel to the central axis 101c of the susceptor.

第1工程および第2工程、または、第1工程〜第3工程を経ることにより、成膜室の内壁面11aに堆積した堆積物Dの研削を行うことができる。 By going through the first step and the second step, or the first step to the third step, the deposit D deposited on the inner wall surface 11a of the film forming chamber can be ground.

以上のように、本実施形態に係る研削装置100および研削方法によれば、サセプタ101とともに研削部材102を回転させることにより、研削部材102の外周部に形成された凸部102Bを、成膜室11の内壁に堆積した堆積物Dに衝突させ、凸部102Bに発生する回転力を利用してこの堆積物Dを研削することができる。したがって、極めて長い作業時間を要する手作業での堆積物Dの研削、成膜室11の壁の交換等の作業が不要となり、その結果として、成膜室11を長期間にわたって大気開放する必要がなくなるため、歩留り低下等の生産性に関する問題発生を回避することができる。 As described above, according to the grinding apparatus 100 and the grinding method according to the present embodiment, by rotating the grinding member 102 together with the susceptor 101, the convex portion 102B formed on the outer peripheral portion of the grinding member 102 is formed in the film forming chamber. The deposit D can be ground by colliding with the deposit D deposited on the inner wall of 11 and utilizing the rotational force generated in the convex portion 102B. Therefore, it is not necessary to manually grind the deposit D and replace the wall of the film forming chamber 11 which requires an extremely long working time, and as a result, it is necessary to open the film forming chamber 11 to the atmosphere for a long period of time. Therefore, it is possible to avoid the occurrence of productivity problems such as a decrease in yield.

本発明は、あらゆる成膜プロセスにおいて必要となる、成膜装置のクリーニングを行うための有効な手段として、広く利用することができる。 The present invention can be widely used as an effective means for cleaning a film forming apparatus required in any film forming process.

10・・・成膜装置
11・・・成膜室
11a・・・成膜室の内壁
11b・・・天井部分
11c・・・床部分
100・・・研削装置
101・・・サセプタ
101c・・・サセプタの中心軸
102・・・研削部材
102A・・・基部
102A・・・サセプタと当接する部分
102B・・・凸部
102B・・・外周部に形成された凸部
103・・・搬送手段
103A・・・アーム
104・・・回転手段
104A・・・棒状部材
D・・・堆積物
10 ... Film formation device 11 ... Film formation chamber 11a ... Inner wall 11b of the film formation chamber ... Ceiling portion 11c ... Floor portion 100 ... Grinding device 101 ... Suceptor 101c ... Central axis 102 of the susceptor ... Grinding member 102A ... Base 102A 1 ... Part 102B in contact with the susceptor 102B ... Convex portion 102B 1 ... Convex portion 103 formed on the outer peripheral portion ... 103A ... Arm 104 ... Rotating means 104A ... Rod-shaped member D ... Sediment

Claims (12)

成膜室内に配される被成膜基板用のサセプタと、
平板状の基部とその表面に形成された凸部とで構成される研削部材と、
前記研削部材を、前記サセプタに載置されるように搬送する搬送手段と、
前記サセプタを中心軸の周りに回転させる回転手段と、を有し、
前記基部の片方の主面が前記サセプタと対向するように、前記研削部材が前記サセプタに載置された状態において、
前記サセプタおよび前記研削部材を平面視した場合に、前記研削部材の最外周部が、前記サセプタの最外周部の外側にあり、
前記凸部が、前記基部の少なくとも一方の主面の外周部に1つ以上形成され、
前記凸部が、前記基部の側面に1つ以上形成され、
前記凸部が、前記基部の他の片方の主面において、外周部以外の部分に形成され、
前記基部の片方の主面の外周部に形成された凸部、前記基部の他の片方の主面に形成された凸部、前記基部の側面に形成された凸部のうち、少なくとも1つが、前記基部の外周部に沿って隙間なく並び、連続した円環状の壁が形成されていることを特徴とする研削装置。
A susceptor for the substrate to be filmed, which is arranged in the film forming chamber,
A grinding member composed of a flat plate-shaped base and a convex portion formed on the surface thereof,
A transport means for transporting the grinding member so as to be mounted on the susceptor, and
It has a rotating means for rotating the susceptor around a central axis.
In a state where the grinding member is placed on the susceptor so that one main surface of the base faces the susceptor.
When viewed from the susceptor and the grinding member, the outermost peripheral portion of the grinding member, Ri outside near the outermost portion of the susceptor,
One or more convex portions are formed on the outer peripheral portion of at least one main surface of the base portion.
One or more convex portions are formed on the side surface of the base portion.
The convex portion is formed on a portion other than the outer peripheral portion on the other main surface of the base portion.
At least one of a convex portion formed on the outer peripheral portion of one main surface of the base portion, a convex portion formed on the other main surface of the base portion, and a convex portion formed on the side surface of the base portion is provided. Sort without gaps along the outer periphery of the base, grinding apparatus characterized that you have been continuous annular wall formation.
前記サセプタまたは前記成膜室の側壁を、前記サセプタの中心軸に平行な方向に駆動させる駆動手段を、さらに有していることを特徴とする請求項1に記載の研削装置。The grinding apparatus according to claim 1, further comprising a driving means for driving the susceptor or the side wall of the film forming chamber in a direction parallel to the central axis of the susceptor. 前記研削部材が、前記基部の主面に平行に広がる構造を有していることを特徴とする請求項1または2のいずれかに記載の研削装置。 The grinding member, the grinding apparatus of any crab according to claim 1 or 2, characterized in that it has a structure extending in parallel with the main surface of the base. 成膜室内に配される被成膜基板用のサセプタと、A susceptor for the substrate to be filmed, which is arranged in the film forming chamber,
平板状の基部とその表面に形成された凸部とで構成される研削部材と、A grinding member composed of a flat plate-shaped base and a convex portion formed on the surface thereof,
前記研削部材を、前記サセプタに載置されるように搬送する搬送手段と、A transport means for transporting the grinding member so as to be mounted on the susceptor, and
前記サセプタを中心軸の周りに回転させる回転手段と、を有し、It has a rotating means for rotating the susceptor around a central axis.
前記基部の片方の主面が前記サセプタと対向するように、前記研削部材が前記サセプタに載置された状態において、In a state where the grinding member is placed on the susceptor so that one main surface of the base faces the susceptor.
前記サセプタおよび前記研削部材を平面視した場合に、前記研削部材の最外周部が、前記サセプタの最外周部の外側にあり、When the susceptor and the grinding member are viewed in a plan view, the outermost peripheral portion of the grinding member is outside the outermost peripheral portion of the susceptor.
前記研削部材が、動作状態において回転半径が大きくなるように、前記基部の主面に平行であって回転中心から離れる方向に、放射状に広がる構造を有していることを特徴とする研削装置。A grinding apparatus characterized in that the grinding member has a structure that is parallel to the main surface of the base portion and radially spreads in a direction away from the center of rotation so that the radius of gyration becomes large in an operating state.
前記凸部が、前記基部の少なくとも一方の主面の外周部に1つ以上形成されていることを特徴とする請求項に記載の研削装置。 The grinding apparatus according to claim 4 , wherein one or more convex portions are formed on the outer peripheral portion of at least one main surface of the base portion. 前記凸部が、前記基部の側面に1つ以上形成されていることを特徴とする請求項またはのいずれかに記載の研削装置。 The convex portion is, the grinding apparatus according to claim 4 or 5, characterized in that it is formed one or more sides of the base. 前記凸部が、前記基部の他の片方の主面において、外周部以外の部分に形成されていることを特徴とする請求項のいずれか一項に記載の研削装置。 The grinding apparatus according to any one of claims 4 to 6 , wherein the convex portion is formed on a portion other than the outer peripheral portion on the other main surface of the base portion. 前記基部の片方の主面の外周部に形成された凸部、前記基部の他の片方の主面に形成された凸部、前記基部の側面に形成された凸部のうち、少なくとも1つが、前記基部の外周部に沿って隙間なく並んでいることを特徴とする請求項のいずれか一項に記載の研削装置。 At least one of a convex portion formed on the outer peripheral portion of one main surface of the base portion, a convex portion formed on the other main surface of the base portion, and a convex portion formed on the side surface of the base portion is provided. The grinding apparatus according to any one of claims 4 to 7 , wherein the grinding apparatus is arranged without a gap along the outer peripheral portion of the base portion. 前記サセプタまたは前記成膜室の側壁を、前記サセプタの中心軸に平行な方向に駆動させる駆動手段を、さらに有していることを特徴とする請求項のいずれか一項に記載の研削装置。 The aspect according to any one of claims 4 to 8 , further comprising a driving means for driving the susceptor or the side wall of the film forming chamber in a direction parallel to the central axis of the susceptor. Grinding device. 複数の前記凸部が、前記基部の他の片方の主面において、外周部以外の部分に形成され、前記研削部材とともに回転している状態で、前記外周部以外の部分と対向する全領域に対し、複数の前記凸部のうちいずれかが重なるように分布していることを特徴とする請求項1〜9のいずれか一項に記載の研削装置。A plurality of the convex portions are formed on a portion other than the outer peripheral portion on the other main surface of the base portion, and in a state of rotating together with the grinding member, in the entire region facing the portion other than the outer peripheral portion. The grinding apparatus according to any one of claims 1 to 9, wherein any one of the plurality of convex portions is distributed so as to overlap with each other. 請求項1〜10のいずれか一項に記載の研削装置を用いた研削方法であって、
前記搬送手段を用いて、前記研削部材を前記サセプタに載置する工程と、
前記回転手段を用いて、前記サセプタまたは前記成膜室の側壁を、前記サセプタの中心軸の周りに回転させる工程と、を有していることを特徴とする研削方法。
A grinding method using the grinding apparatus according to any one of claims 1 to 10.
The step of placing the grinding member on the susceptor using the conveying means, and
A grinding method comprising the step of rotating the susceptor or the side wall of the film forming chamber around the central axis of the susceptor by using the rotating means.
駆動手段を用いて、前記サセプタまたは前記成膜室の側壁を、前記サセプタの中心軸に平行な方向に駆動させる工程を、さらに有していることを特徴とする請求項11に記載の研削方法。 The grinding method according to claim 11 , further comprising a step of driving the susceptor or the side wall of the film forming chamber in a direction parallel to the central axis of the susceptor by using a driving means. ..
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