JP6827241B2 - Film structure - Google Patents
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- JP6827241B2 JP6827241B2 JP2017082988A JP2017082988A JP6827241B2 JP 6827241 B2 JP6827241 B2 JP 6827241B2 JP 2017082988 A JP2017082988 A JP 2017082988A JP 2017082988 A JP2017082988 A JP 2017082988A JP 6827241 B2 JP6827241 B2 JP 6827241B2
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本発明は、金属で構成される導電層の形成された透明基材を備えるフィルム構造体に関する。 The present invention relates to a film structure comprising a transparent substrate on which a conductive layer made of metal is formed.
静電容量式タッチパネルは、透明基材と、透明基材上に形成された導電層とを備えている。導電層には、従来、インジウム錫酸化物であるＩＴＯなどの透明導電素材を用いて構成されている。ＩＴＯは抵抗率が高く、タッチパネルのサイズが大型化すると、静電容量検出の感度が低下し、動作速度の遅延が発生し、タッチパネルとして動作させることが困難になる場合がある。そこで、銅又は銅合金などの低抵抗率の導電性金属からなる導体線をＩＴＯの代替として用いる静電容量式タッチパネルが提案されている。
例えば、特許文献１に示すような透明基材の上に金属配線層と、視認性を低下させるため金属光沢の反射率を低下させる黒化層とを備える製造方式がある。
図１０を用いて特許文献１について簡単に説明する。図１０において、黒化層２５を透明基材２２に設けられている金属配線層２４の上に備えることにより、金属配線層２４の反射率を低下させることで視認性が低下する。なお、この方式については、特許文献１に詳しく説明されている。
The capacitance type touch panel includes a transparent base material and a conductive layer formed on the transparent base material. Conventionally, the conductive layer is formed by using a transparent conductive material such as ITO which is an indium tin oxide. ITO has a high resistivity, and when the size of the touch panel is increased, the sensitivity of capacitance detection is lowered, the operation speed is delayed, and it may be difficult to operate the touch panel. Therefore, a capacitive touch panel has been proposed in which a conductor wire made of a conductive metal having a low resistivity such as copper or a copper alloy is used as an alternative to ITO.
For example, there is a manufacturing method including a metal wiring layer on a transparent base material as shown in Patent Document 1 and a blackening layer for reducing the reflectance of metallic luster in order to reduce visibility.
Patent Document 1 will be briefly described with reference to FIG. In FIG. 10, by providing the blackening layer 25 on the metal wiring layer 24 provided on the transparent base material 22, the reflectance of the metal wiring layer 24 is lowered, so that the visibility is lowered. This method is described in detail in Patent Document 1.
しかしながら、タッチパネルとして使用する際には、金属配線の上部に接着層および透明保護層が接着されるが、視認性を低下させるために、金属配線を微細化すると、接着層の収縮により金属配線と接着層との剥離が起こりやすく、接着性が悪いという問題があった。
金属配線の接着性を向上させるためには、単純には、金属配線の表面積を増やすか、又は、金属配線の表面粗さを粗くすればよいと考えられる。
しかしながら、単純に表面積を増やすと、視認性が上がってしまうという課題があった。また、単純に表面粗さを粗くすれば、断面積が小さな部分が生じてしまい、電気抵抗が増加してしまうという課題があった。
However, when used as a touch panel, an adhesive layer and a transparent protective layer are adhered to the upper part of the metal wiring. However, when the metal wiring is made finer in order to reduce visibility, the adhesive layer shrinks to form a metal wiring. There is a problem that peeling from the adhesive layer is likely to occur and the adhesiveness is poor.
In order to improve the adhesiveness of the metal wiring, it is considered that the surface area of the metal wiring is simply increased or the surface roughness of the metal wiring is roughened.
However, if the surface area is simply increased, there is a problem that the visibility is improved. Further, if the surface roughness is simply roughened, there is a problem that a portion having a small cross-sectional area is generated and the electric resistance is increased.
本発明は、前記従来の問題点に鑑み、金属配線よりも接着層との接触面積が大きい透明基材の表面粗さを粗くして、透明基材と接着層との接着性を向上させた上で、金属配線を、透明基材と接着層とで挟み付けることにより、金属配線と接着層との接着性の向上を図ろうとするものであって、たとえ金属配線を微細化したとしても、接着層の収縮により金属配線と接着層との剥離が生じにくく、接着性の向上を可能としたフィルム構造体を提供することを目的としている。 In view of the above-mentioned conventional problems, the present invention roughens the surface roughness of the transparent base material having a larger contact area with the adhesive layer than the metal wiring, and improves the adhesiveness between the transparent base material and the adhesive layer. In the above, the metal wiring is sandwiched between the transparent base material and the adhesive layer to improve the adhesiveness between the metal wiring and the adhesive layer, and even if the metal wiring is made finer. It is an object of the present invention to provide a film structure capable of improving adhesiveness by preventing peeling between a metal wiring and an adhesive layer due to shrinkage of the adhesive layer.
本発明の１つの態様にかかるフィルム構造体は、
凹部が形成された透明基材と、
前記凹部の底部に設けられた金属配線と、
前記透明基材上に配された接着層とを備え、
前記凹部の前記底部の前記金属配線の表面粗さが前記透明基材の表面粗さよりも小であるとともに、
前記金属配線が前記凹部の側面部に沿わせて設けられ、
前記凹部の開口は、前記透明基材の厚さ方向の断面において、前記凹部の前記底部より狭小であって、平面視において、前記金属配線の幅は、前記凹部の前記底部の幅と同じであり、
前記接着層の一部は、前記凹部内に位置する。
The film structure according to one aspect of the present invention is
A transparent base material with recesses and
The metal wiring provided at the bottom of the recess and
With an adhesive layer arranged on the transparent substrate,
Together it is smaller than the bottom portion and the surface roughness of the surface roughness of the metal wiring said transparent substrate of said recess,
The metal wiring is provided along the side surface of the recess.
The opening of the recess is narrower than the bottom of the recess in the cross section in the thickness direction of the transparent substrate, and the width of the metal wiring is the same as the width of the bottom of the recess in plan view. Yes,
A part of the adhesive layer is located in the recess .
以上のように、本発明の前記態様によれば、例えば視認性を低下させるために金属配線を微細化したとしても、透明基材の表面粗さを金属配線の表面粗さよりも粗くすることで接着層の収縮により金属配線と接着層との剥離が生じにくくなり、金属配線と接着層との接着性を向上させることができるフィルム構造体の提供を実現できる。 As described above, according to the above aspect of the present invention, for example, even if the metal wiring is made finer in order to reduce visibility, the surface roughness of the transparent base material is made rougher than the surface roughness of the metal wiring. It is possible to provide a film structure capable of improving the adhesiveness between the metal wiring and the adhesive layer by making it difficult for the metal wiring and the adhesive layer to peel off due to the shrinkage of the adhesive layer.
（第１の実施形態）
以下、本発明の第１の実施形態について、図１乃至図４を参照して説明する。
図１に、本発明の第１の実施形態におけるフィルム構造体１の厚み方向の断面の一部を示した概略図を示す。フィルム構造体１の主な用途はノートパソコン又はタブレットなどにおけるタッチパネル用の静電容量式センサである。
図１において、フィルム構造体１は、透明基材２と、金属配線４と、接着層５とを備えて構成されている。
(First Embodiment)
Hereinafter, the first embodiment of the present invention will be described with reference to FIGS. 1 to 4.
FIG. 1 shows a schematic view showing a part of a cross section of the film structure 1 in the thickness direction according to the first embodiment of the present invention. The main use of the film structure 1 is a capacitive sensor for a touch panel in a notebook computer, a tablet, or the like.
In FIG. 1, the film structure 1 is configured to include a transparent base material 2, a metal wiring 4, and an adhesive layer 5.
透明基材２は、例えばＰＥＴ樹脂又はポリカーボネード樹脂で構成され、その厚さが１００ｎｍ以下で幅が５００ｍｍ以上であるフィルム構造体である。透明基材２は、可視光透過率が９０％以上である。透明基材２には、例えば、深さ約２μｍで底部３ａの幅が約２μｍである複数の凹部３が設けられる。なお、凹部３の幅寸法、言い換えれば、金属配線４の幅が３μｍ超となると、人が視認可能になるため、平面視において、金属配線４がその幅を超えないよう、凹部３の幅は３μｍ以下とするのが望ましい。一方、金属配線４の電気抵抗の観点から、凹部３の幅は０．１μｍ以上とするのが望ましい。 The transparent base material 2 is a film structure made of, for example, a PET resin or a polycarbonate resin, having a thickness of 100 nm or less and a width of 500 mm or more. The transparent base material 2 has a visible light transmittance of 90% or more. The transparent base material 2 is provided with, for example, a plurality of recesses 3 having a depth of about 2 μm and a width of the bottom portion 3a of about 2 μm. If the width of the recess 3, in other words, the width of the metal wiring 4 exceeds 3 μm, it becomes visible to humans. Therefore, in a plan view, the width of the recess 3 is set so that the metal wiring 4 does not exceed the width. It is desirable that the thickness is 3 μm or less. On the other hand, from the viewpoint of the electrical resistance of the metal wiring 4, the width of the recess 3 is preferably 0.1 μm or more.
凹部３の側面部３ｂおよび底部３ａには、例えばＣｕ又はＡｇで構成されて厚さが２００ｎｍ以上かつ凹部３の深さの半分以下の金属配線４が設けられている。金属配線４の厚さが２００ｎｍを下回ると、後工程又は使用時に除去又は剥離する蓋然性が高く、一方、凹部３の深さの半分を超えると、視認性の悪化を招くからである。本実施形態においては、一例として、金属配線４の厚さを２００ｎｍ以上でかつ１０００ｎｍ以下とする。
金属配線４は、金属で構成される導電層であり、少なくとも凹部３の底部３ａの全部を覆うように配される。さらに、必要に応じて、凹部３の側面部３ｂにも金属配線４を設ければよい。一般的に、線幅が３μｍを下回ると人間の目視では視認困難となり、線幅が２μｍ以下となると、人間の目視では視認不可能となる。このため、フィルム構造体１の平面視において、金属配線４の幅を２μｍ以下としている。一方で、凹部３の側面部３ｂに沿うように金属配線４を側面部３ｂにも設ける場合には、金属配線４の体積を増加させて、電気抵抗を下げることができる。加えて、金属配線４を凹部３の側面部３ｂに沿わせていることで、平面視において、金属配線４の幅は、凹部３の底部３ａの幅と変わらない、すなわち、凹部３の側面部３ｂに沿う金属配線４は、凹部３の底部３ａの金属配線４と重複するため（凹部３の側面部３ｂに沿う金属配線４は、平面視で見えない）、低い視認性を担保しつつ低抵抗を実現できる。
A metal wiring 4 made of, for example, Cu or Ag and having a thickness of 200 nm or more and half or less the depth of the recess 3 is provided on the side surface portion 3b and the bottom portion 3a of the recess 3. This is because if the thickness of the metal wiring 4 is less than 200 nm, there is a high possibility that it will be removed or peeled off during a subsequent process or use, while if it exceeds half the depth of the recess 3, visibility will be deteriorated. In the present embodiment, as an example, the thickness of the metal wiring 4 is set to 200 nm or more and 1000 nm or less.
The metal wiring 4 is a conductive layer made of metal, and is arranged so as to cover at least the entire bottom portion 3a of the recess 3. Further, if necessary, the metal wiring 4 may be provided on the side surface portion 3b of the recess 3. Generally, when the line width is less than 3 μm, it becomes difficult for humans to visually recognize it, and when the line width is 2 μm or less, it becomes invisible to human eyes. Therefore, in the plan view of the film structure 1, the width of the metal wiring 4 is set to 2 μm or less. On the other hand, when the metal wiring 4 is also provided on the side surface portion 3b along the side surface portion 3b of the recess 3, the volume of the metal wiring 4 can be increased and the electric resistance can be reduced. In addition, by aligning the metal wiring 4 along the side surface portion 3b of the recess 3, the width of the metal wiring 4 is the same as the width of the bottom portion 3a of the recess 3 in a plan view, that is, the side surface portion of the recess 3. Since the metal wiring 4 along the recess 3 overlaps with the metal wiring 4 at the bottom 3a of the recess 3 (the metal wiring 4 along the side surface 3b of the recess 3 cannot be seen in a plan view), it is low while ensuring low visibility. Resistance can be realized.
凹部３は、その開口部３ｃが底部３ａと比べて狭小形状となっており、開口部３ｃの幅は少なくとも２μｍ未満であり、好ましくは底部３ａの半分（１μｍ）以下かつ０．１μｍ以上である。この範囲とすることで、視認性の悪化を抑えつつ、金属配線４の剥離を防止できる。 The opening 3c of the recess 3 has a narrower shape than the bottom 3a, and the width of the opening 3c is at least less than 2 μm, preferably less than half (1 μm) of the bottom 3a and 0.1 μm or more. .. Within this range, peeling of the metal wiring 4 can be prevented while suppressing deterioration of visibility.
透明基材２の上には、接着層５(例えばＵＶ硬化樹脂などの光学接着剤)を介して、透明保護基材６(例えばＰＥＴ又はカバーガラスなど)が接着され、フィルム構造体１が構成されている。フィルム構造体１の全体厚みは、一例として、使用する製品の薄型化に伴い、０．２ｍｍ以下となっている。接着層５は、透明基材２の上面部９に密着するとともに、接着層５の一部が凹部３内に入り込んでいる。凹部３の開口部３ｃが底部３ａよりも幅狭のアリ溝形状であるとき、そのアリ溝形状の凹部３内に接着層５の一部が位置することにより、接着層５の透明基材２に対する抜け止め効果を発揮させることができて接着層５が透明基材２から剥離しにくくなり、接着層５と透明基材２との接着性が更に向上する。 A transparent protective base material 6 (for example, PET or cover glass) is adhered onto the transparent base material 2 via an adhesive layer 5 (for example, an optical adhesive such as a UV curable resin) to form a film structure 1. Has been done. As an example, the total thickness of the film structure 1 is 0.2 mm or less as the product used becomes thinner. The adhesive layer 5 is in close contact with the upper surface portion 9 of the transparent base material 2, and a part of the adhesive layer 5 has entered the recess 3. When the opening 3c of the recess 3 has a dovetail groove shape narrower than the bottom 3a, a part of the adhesive layer 5 is located in the dovetail groove-shaped recess 3 so that the transparent base material 2 of the adhesive layer 5 is formed. It is possible to exert an effect of preventing the adhesive layer 5 from peeling off from the transparent base material 2, and the adhesiveness between the adhesive layer 5 and the transparent base material 2 is further improved.
金属配線４の表面粗さ（算術平均粗さＲａ）は、透明基材２の表面粗さ（算術平均粗さＲａ）よりも小とする。これにより、透明基材表面の高い表面粗さＲａにより、透明基材２と接着層５とのアンカー効果を増加させ、透明基材２の上面部９の透明保護基材６との密着性を確保することができる。この際、金属配線４も、透明基材２と同様に表面粗さＲａを高くしてしまうと、金属配線４の厚みは２００ｎｍ程度のため、下限値としてＲａ＝２ｎｍで約２％の電気抵抗が悪化し、上限値としてＲａ＝４ｎｍで約５％の電気抵抗が悪化してしまう。そこで、前記した以上に電気抵抗が悪化しないようにするためには、金属配線４の表面粗さＲａを、透明基材表面より低く、Ｒａ＝２ｎｍ以上かつ４ｎｍ以下にすることが望ましい。 The surface roughness of the metal wiring 4 (arithmetic mean roughness Ra) is smaller than the surface roughness of the transparent base material 2 (arithmetic mean roughness Ra). As a result, the high surface roughness Ra of the surface of the transparent base material increases the anchoring effect between the transparent base material 2 and the adhesive layer 5, and the adhesion of the upper surface portion 9 of the transparent base material 2 to the transparent protective base material 6 is improved. Can be secured. At this time, if the surface roughness Ra of the metal wiring 4 is increased as in the transparent base material 2, the thickness of the metal wiring 4 is about 200 nm, so that the lower limit is Ra = 2 nm and the electrical resistance is about 2%. Deteriorates, and the electrical resistance of about 5% deteriorates at Ra = 4 nm as the upper limit value. Therefore, in order to prevent the electrical resistance from deteriorating more than described above, it is desirable that the surface roughness Ra of the metal wiring 4 is lower than the surface of the transparent substrate, and Ra = 2 nm or more and 4 nm or less.
金属配線４の表面粗さＲａを前記したように構成することにより、金属配線４の局所的な細りが発生し難く、金属配線４の断面積の低下が抑えられるため、電気抵抗 Ｒ＝ρＬ／Ａ の式より求められる電気抵抗Ｒの悪化が抑えられる。なお、この式で、ρは比例定数であり、Ｌは金属配線４の長さであり、Ａは金属配線４の断面積である。また、金属配線４の表面粗さＲａを前記したように構成することにより、静電気による配線破壊も起こり難くすることができる。 By configuring the surface roughness Ra of the metal wiring 4 as described above, local thinning of the metal wiring 4 is unlikely to occur, and a decrease in the cross-sectional area of the metal wiring 4 is suppressed. Therefore, the electrical resistance R = ρL / The deterioration of the electrical resistance R obtained from the equation A is suppressed. In this equation, ρ is a constant of proportionality, L is the length of the metal wiring 4, and A is the cross-sectional area of the metal wiring 4. Further, by configuring the surface roughness Ra of the metal wiring 4 as described above, it is possible to prevent the wiring from being broken by static electricity.
次に、図２〜図５に、本発明の第１の実施形態のフィルム構造体１の製造方法を説明する。 Next, FIGS. 2 to 5 show a method for producing the film structure 1 according to the first embodiment of the present invention.
まず、第１の製造工程として、図２において透明基材２に印刷により微細配線構造を形成するマスク層７を構成する。 First, as a first manufacturing step, a mask layer 7 is formed on the transparent base material 2 in FIG. 2 by printing to form a fine wiring structure.
その後、第２の製造工程として、図３に示すようにエッチング法によりマスク層７に遮られていない開口部分７ａに凹部３を形成する。 Then, as a second manufacturing step, as shown in FIG. 3, a recess 3 is formed in the opening portion 7a which is not blocked by the mask layer 7 by an etching method.
その後、第３の製造工程として、図４に示すようにスパッタリング法により、金属配線４の一例としてのＣｕ膜を、透明基材２の表面およびマスク層７の表面、凹部３の側部３ｂおよび底部３ａのそれぞれ全面に成膜する。 Then, as a third manufacturing step, as shown in FIG. 4, a Cu film as an example of the metal wiring 4 is applied to the surface of the transparent base material 2, the surface of the mask layer 7, the side portion 3b of the recess 3, and the like. A film is formed on the entire surface of each of the bottom portions 3a.
その後、第４の工程として、図５に示すように、透明基材２の上面部９に、アルミナを主成分とする研磨剤１０を塗布しつつ、不繊布で構成された研磨工具１１を揺動させることにより透明基材２の上面部９にあるＣｕ膜の金属配線４と透明基材２の凹部３の底部に配置された金属配線４とを研磨して、透明基材の上面部９にあるＣｕ膜の金属配線４を除去する。この際に、研磨工具１１に３ＰＳＩ（言い換えると、２０．７ｋＰａ）以上の荷重を加えることにより、図３に示すように凹部３の側面部３ｂのＣｕ膜が変形し、図１に示すように凹部３の開口部３ｃを狭小化させる。研磨工具１１に与える荷重が低いと、図４に示す状態のままのような、溝部と開口部が平行な配線のフィルム構造体となる。また、透明基材の上面部９にあるＣｕ膜の金属配線４を除去したのちは、透明基材２の上面部９のみが研磨されるため、透明基材２の凹部３の底部に配置されかつ研磨された金属配線４に対して、透明基材２の上面部９の表面粗さＲａを任意に調整することができ、表面粗さＲａを粗くすることで、接着性を向上させることができる。 Then, as a fourth step, as shown in FIG. 5, the polishing tool 11 made of a non-woven cloth is shaken while applying the abrasive 10 containing alumina as a main component to the upper surface portion 9 of the transparent base material 2. By moving the metal wiring 4 of the Cu film on the upper surface 9 of the transparent base material 2 and the metal wiring 4 arranged on the bottom of the recess 3 of the transparent base material 2, the upper surface 9 of the transparent base material 9 is polished. The metal wiring 4 of the Cu film in the above is removed. At this time, by applying a load of 3 PSI (in other words, 20.7 kPa) or more to the polishing tool 11, the Cu film on the side surface portion 3b of the recess 3 is deformed as shown in FIG. 3, and as shown in FIG. The opening 3c of the recess 3 is narrowed. When the load applied to the polishing tool 11 is low, a film structure having a groove and an opening parallel to each other is formed as shown in FIG. Further, after removing the metal wiring 4 of the Cu film on the upper surface portion 9 of the transparent base material, only the upper surface portion 9 of the transparent base material 2 is polished, so that the metal wiring 4 is arranged at the bottom of the recess 3 of the transparent base material 2. Moreover, the surface roughness Ra of the upper surface portion 9 of the transparent base material 2 can be arbitrarily adjusted with respect to the polished metal wiring 4 , and the adhesiveness can be improved by making the surface roughness Ra rough. it can.
その後、第５の製造工程として、接着層５をスピンコートにより塗布し、透明保護基材６を接着することで、図１に示すフィルム構造体１を製造する。
このようにすることで、金属配線４の視認性を低下させつつ凹部３の側面部３ｂ及び底部３ａに低抵抗率となるように金属配線４を設けながら、透明基材２の表面粗さＲａを金属配線４の表面粗さＲａよりも粗くすることで金属配線４と接着層５との接着性が向上したフィルム構造体１を製造できる。
Then, as a fifth manufacturing step, the adhesive layer 5 is applied by spin coating and the transparent protective base material 6 is adhered to produce the film structure 1 shown in FIG.
By doing so, the surface roughness Ra of the transparent base material 2 is provided while the metal wiring 4 is provided on the side surface portion 3b and the bottom portion 3a of the recess 3 so as to have a low resistance while reducing the visibility of the metal wiring 4. A film structure 1 having improved adhesiveness between the metal wiring 4 and the adhesive layer 5 can be manufactured by making the surface roughness Ra of the metal wiring 4 rougher than that of the metal wiring 4.
以上述べた本発明の第１の実施形態において、透明基材２の上面部９を研磨する際に、適切な荷重をかけて研磨することにより、金属配線４の表面粗さ（算術平均粗さＲａ）が透明基材２の表面粗さ（算術平均粗さＲａ）よりも小にできる。これにより、前記したように、透明基材表面の高い表面粗さＲａにより、透明基材２と接着層５とのアンカー効果を増加させ、透明基材２の上面部９の透明保護基材６との密着性を確保することができる。 In the first embodiment of the present invention described above, when the upper surface portion 9 of the transparent base material 2 is polished, the surface roughness of the metal wiring 4 (arithmetic mean roughness) is obtained by polishing by applying an appropriate load. Ra) can be made smaller than the surface roughness (arithmetic mean roughness Ra) of the transparent base material 2. As a result, as described above, the high surface roughness Ra of the surface of the transparent base material increases the anchoring effect between the transparent base material 2 and the adhesive layer 5, and the transparent protective base material 6 on the upper surface portion 9 of the transparent base material 2 is increased. Adhesion with can be ensured.
また、より高い圧力で、例えば具体的には１．５倍の圧力で上面部９を研磨することで、図６に示すような透明基材２の凹部３の開口部３ｃを狭小化した形状とすることができる。一般的には、図７に示すように開口部３ｃは、凹部３の底部３ａと同じ幅の形状では密着性の改善には表面積の増加分しか作用しないため、密着性の向上には限界がある。一方で、透明基材２の厚さ方向の断面の凹部の開口部が狭小化した形状に対して接着層５の例えばＵＶ硬化樹脂などが入り込み固まることで、接着層５と透明基材２との間で、より強固な密着性を確保することができ、透明基材２に対する透明保護基材６の接着強度が高くなり、振動などによる層間剥離を防止することができ信頼性が向上する。 Further, by polishing the upper surface portion 9 with a higher pressure, for example, 1.5 times the pressure, the opening 3c of the recess 3 of the transparent base material 2 as shown in FIG. 6 is narrowed. Can be. In general, as shown in FIG. 7, if the opening 3c has the same width as the bottom 3a of the recess 3, only the increase in surface area acts to improve the adhesion, so that there is a limit to the improvement in adhesion. is there. On the other hand, when the opening of the recess in the cross section of the transparent base material 2 in the thickness direction is narrowed, for example, a UV curable resin of the adhesive layer 5 enters and hardens, so that the adhesive layer 5 and the transparent base material 2 are combined. A stronger adhesion can be ensured between the two, the adhesive strength of the transparent protective base material 6 to the transparent base material 2 is increased, delamination due to vibration or the like can be prevented, and reliability is improved.
なお、本発明の第１の実施形態において、透明基材への凹部形成方法として、マスク印刷とエッチング法とを用いたが、他の微細配線構造の形成方法、例えばレーザ加工又は機械加工等を使用しても良い。 In the first embodiment of the present invention, mask printing and etching methods were used as the method for forming the recesses on the transparent substrate, but other methods for forming the fine wiring structure, such as laser processing or machining, may be used. You may use it.
また、図８に示す基材（ＰＥＴ）表面部の粗さＲａを変化させた場合の接着層（ＵＶ硬化樹脂）の密着強度をピール試験により評価した結果を示す。透明基材２の上面部９の表面粗さＲａは、金属配線４の表面粗さＲａが前述の通りにＲａ＝２ｎｍ以上かつ４ｎｍ以下に研磨されている表面粗さＲａに対して、透明基材２の上面部９を、金属配線４の表面粗さＲａの２倍以上粗くすることで、より接着性が１．３倍まで向上することを確認した。この結果、透明基材２の上面部９の表面粗さＲａは、少なくともＲａ＝４ｎｍ以上とすることが望ましい。透明基材２の上面部９の表面粗さＲａの上限値としては、透明基材２の上面部９を、より粗くすることで密着強度を向上できるが、図９に示すように透明基材２の上面部９の表面粗さＲａがＲａ＝１０ｎｍを上回る数値になると、接着層と透明基材表面との間に空気層が入ってしまい、著しく透過率が悪化するため、透明性（透過率９０％以上）を確保できない。 Further, the result of evaluating the adhesion strength of the adhesive layer (UV curable resin) when the roughness Ra of the surface portion of the base material (PET) shown in FIG. 8 is changed by a peel test is shown. The surface roughness Ra of the upper surface portion 9 of the transparent base material 2 is a transparent group with respect to the surface roughness Ra in which the surface roughness Ra of the metal wiring 4 is polished to Ra = 2 nm or more and 4 nm or less as described above. It was confirmed that the adhesiveness was further improved up to 1.3 times by making the upper surface portion 9 of the material 2 rougher than twice the surface roughness Ra of the metal wiring 4. As a result, it is desirable that the surface roughness Ra of the upper surface portion 9 of the transparent base material 2 is at least Ra = 4 nm or more. As the upper limit value of the surface roughness Ra of the upper surface portion 9 of the transparent base material 2, the adhesion strength can be improved by making the upper surface portion 9 of the transparent base material 2 rougher, but as shown in FIG. 9, the transparent base material 2 When the surface roughness Ra of the upper surface portion 9 of 2 exceeds Ra = 10 nm, an air layer enters between the adhesive layer and the surface of the transparent base material, and the transmittance is significantly deteriorated. The rate of 90% or more) cannot be secured.
以上から、前記透明基材２の上面部９の前記表面粗さＲａはＲａ＝４ｎｍ以上かつＲａ＝１０ｎｍ以下であることが望ましい。 From the above, it is desirable that the surface roughness Ra of the upper surface portion 9 of the transparent base material 2 is Ra = 4 nm or more and Ra = 10 nm or less.
前記第１の実施形態によれば、例えば視認性を低下させるために金属配線４を微細化したとしても、透明基材２の表面粗さＲａを金属配線４の表面粗さＲａよりも粗くすることで接着層５の収縮により金属配線４と接着層５との剥離が生じにくくなり、金属配線４と接着層５との接着性を向上させることができる。 According to the first embodiment, for example, even if the metal wiring 4 is made finer in order to reduce visibility, the surface roughness Ra of the transparent base material 2 is made coarser than the surface roughness Ra of the metal wiring 4. As a result, the shrinkage of the adhesive layer 5 makes it difficult for the metal wiring 4 and the adhesive layer 5 to peel off, and the adhesiveness between the metal wiring 4 and the adhesive layer 5 can be improved.
最後に、本発明の種々の態様について記載しておく。
本発明の第１の態様によれば、凹部が形成された透明基材と、
前記凹部の底部に設けられた金属配線と、
前記透明基材上に配された接着層とを備え、
前記金属配線の表面粗さが前記透明基材の表面粗さよりも小である、フィルム構造体を提供する。
このような構成によれば、透明基材の表面粗さを大きくすることで、透明基材と接着層との接着性を向上させることができる。また、これにより、透明基材表面の高い表面粗さＲａにより、透明基材と接着層とのアンカー効果を増加させ、透明基材の上面部の接着層との密着性を確保することができる。
Finally, various aspects of the present invention will be described.
According to the first aspect of the present invention, a transparent base material having a recess formed therein and
The metal wiring provided at the bottom of the recess and
With an adhesive layer arranged on the transparent substrate,
Provided is a film structure in which the surface roughness of the metal wiring is smaller than the surface roughness of the transparent base material.
According to such a configuration, the adhesiveness between the transparent base material and the adhesive layer can be improved by increasing the surface roughness of the transparent base material. Further, as a result, the high surface roughness Ra of the surface of the transparent base material increases the anchoring effect between the transparent base material and the adhesive layer, and the adhesion of the upper surface portion of the transparent base material to the adhesive layer can be ensured. ..
本発明の第２の態様によれば、記凹部の開口は、前記透明基材の厚さ方向の断面において、前記凹部の前記底部より狭小であり、
前記接着層の一部は、前記凹部内に位置する、第１の態様に記載のフィルム構造体を提供する。
このような構成により、接着層に対して凹部がアリ溝形状となり、かつ、そのアリ溝形状の凹部内に接着層の一部が位置することにより、接着層の透明基材に対する抜け止め効果を発揮させることができて接着層が透明基材から剥離しにくくなり、接着層と透明基材との接着性が更に向上する。
According to the second aspect of the present invention, the opening of the recess is narrower than the bottom of the recess in the cross section in the thickness direction of the transparent substrate.
A part of the adhesive layer provides the film structure according to the first aspect, which is located in the recess.
With such a configuration, the recesses have a dovetail groove shape with respect to the adhesive layer, and a part of the adhesive layer is located in the dovetail groove-shaped recesses, so that the adhesive layer has a retaining effect on the transparent substrate. It can be exerted and the adhesive layer is less likely to be peeled off from the transparent base material, and the adhesiveness between the adhesive layer and the transparent base material is further improved.
本発明の第３の態様によれば、前記金属配線が前記凹部の側面部に沿わせて設けられ、
前記凹部の開口は、前記透明基材の厚さ方向の断面において、前記凹部の前記底部より狭小であって、平面視において、前記金属配線の幅は、前記凹部の前記底部の幅と同じであり、
前記接着層の一部は、前記凹部内に位置する、第１の態様に記載のフィルム構造体を提供する。
このような構成により、金属配線が底部と側面部に設けられるので、金属配線の体積を増加させ、抵抗率を低下させることができる。また、金属配線を凹部の側面部に沿わせていることで、平面視において、金属配線の幅は、凹部の底部の幅と変わらない。すなわち、凹部の側面部に沿う金属配線は、凹部の底部の金属配線と重複するため、低い視認性を担保しつつ低抵抗を実現できる。
According to the third aspect of the present invention, the metal wiring is provided along the side surface portion of the recess.
The opening of the recess is narrower than the bottom of the recess in the cross section in the thickness direction of the transparent substrate, and the width of the metal wiring is the same as the width of the bottom of the recess in plan view. Yes,
A part of the adhesive layer provides the film structure according to the first aspect, which is located in the recess.
With such a configuration, since the metal wiring is provided on the bottom portion and the side surface portion, the volume of the metal wiring can be increased and the resistivity can be decreased. Further, since the metal wiring is aligned with the side surface portion of the recess, the width of the metal wiring is the same as the width of the bottom portion of the recess in a plan view. That is, since the metal wiring along the side surface portion of the recess overlaps with the metal wiring at the bottom of the recess, low resistance can be realized while ensuring low visibility.
本発明の第４の態様によれば、前記透明基材の前記表面粗さがＲａ＝４ｎｍ以上かつＲａ＝１０ｎｍ以下であることを特徴とする第１〜３のいずれか１つの態様に記載のフィルム構造体を提供する。
このような構成により、透明基材の表面粗さＲａをＲａ＝４ｎｍ以上とすることで透明基材と接着層との接着性を向上することができるとともに、Ｒａ＝１０ｎｍ以下とすることで、Ｒａ＝１０ｎｍを超えることによる光学鏡面が失われることを防止できる。
According to a fourth aspect of the present invention, according to any one of the first to third aspects, wherein the surface roughness of the transparent substrate is Ra = 4 nm or more and Ra = 10 nm or less. A film structure is provided.
With such a configuration, the adhesiveness between the transparent base material and the adhesive layer can be improved by setting the surface roughness Ra of the transparent base material to Ra = 4 nm or more, and Ra = 10 nm or less. It is possible to prevent the optical mirror surface from being lost when Ra = 10 nm or more.
本発明の第５の態様によれば、前記金属配線の前記表面粗さは、Ｒａ＝２ｎｍ以上かつＲａ＝４ｎｍ以下である、第１〜４のいずれか１つの態様に記載のフィルム構造体を提供する。
このような構成により、金属配線の局所的な細りが発生し難く、金属配線の断面積の低下が抑えられるため、電気抵抗の悪化を抑制することができる。また、金属配線の表面粗さを前記したように構成することにより、静電気による配線破壊も起こり難くすることができる。
According to the fifth aspect of the present invention, the film structure according to any one of the first to fourth aspects, wherein the surface roughness of the metal wiring is Ra = 2 nm or more and Ra = 4 nm or less. provide.
With such a configuration, local thinning of the metal wiring is unlikely to occur, and a decrease in the cross-sectional area of the metal wiring is suppressed, so that deterioration of electrical resistance can be suppressed. Further, by configuring the surface roughness of the metal wiring as described above, it is possible to prevent the wiring from being destroyed by static electricity.
なお、前記様々な実施形態又は変形例のうちの任意の実施形態又は変形例を適宜組み合わせることにより、それぞれの有する効果を奏するようにすることができる。また、実施形態同士の組み合わせ又は実施例同士の組み合わせ又は実施形態と実施例との組み合わせが可能であると共に、異なる実施形態又は実施例の中の特徴同士の組み合わせも可能である。 In addition, by appropriately combining any embodiment or modification of the various embodiments or modifications, the effects of each can be achieved. Further, it is possible to combine embodiments or examples, or to combine embodiments and examples, and it is also possible to combine features in different embodiments or examples.
本発明の前記態様にかかるフィルム構造体によれば、透明基材の表面粗さを大きくすることで、接着層との接着性を向上させることができる、フィルム構造体を実現出来る。本発明の前記態様は、特に、フレキシブル性が求められるタッチパネル又は生体にフィットするスマートウォッチなどのウェアラブル端末に応用することができる。 According to the film structure according to the above aspect of the present invention, it is possible to realize a film structure capable of improving the adhesiveness with the adhesive layer by increasing the surface roughness of the transparent base material. The above aspect of the present invention can be particularly applied to a wearable terminal such as a touch panel or a smart watch that fits a living body, which requires flexibility.
１ フィルム構造体
２ 透明基材
３ 凹部
３ａ 底部
３ｂ 側面部
３ｃ 開口部
４ 金属配線
５ 接着層
６ 透明保護基材
７ マスク層
７ａ 開口
９ 透明基材の上面部
１０ 研磨剤
１１ 研磨工具
1 Film structure 2 Transparent base material 3 Recession 3a Bottom 3b Side surface 3c Opening 4 Metal wiring 5 Adhesive layer 6 Transparent protective base material 7 Mask layer 7a Opening 9 Top surface of transparent base material 10 Abrasive 11 Polishing tool
Claims (4)
前記凹部の底部に設けられた金属配線と、
前記透明基材上に配された接着層とを備え、
前記凹部の前記底部の前記金属配線の表面粗さが前記透明基材の表面粗さよりも小であるとともに、
前記金属配線が前記凹部の側面部に沿わせて設けられ、
前記凹部の開口は、前記透明基材の厚さ方向の断面において、前記凹部の前記底部より狭小であって、平面視において、前記金属配線の幅は、前記凹部の前記底部の幅と同じであり、
前記接着層の一部は、前記凹部内に位置する、フィルム構造体。 A transparent base material with recesses and
The metal wiring provided at the bottom of the recess and
With an adhesive layer arranged on the transparent substrate,
Together it is smaller than the bottom portion and the surface roughness of the surface roughness of the metal wiring said transparent substrate of said recess,
The metal wiring is provided along the side surface of the recess.
The opening of the recess is narrower than the bottom of the recess in the cross section in the thickness direction of the transparent substrate, and the width of the metal wiring is the same as the width of the bottom of the recess in plan view. Yes,
A part of the adhesive layer is a film structure located in the recess .
前記凹部の底部に設けられた金属配線と、 The metal wiring provided at the bottom of the recess and
前記透明基材上に配された接着層とを備え、 With an adhesive layer arranged on the transparent substrate,
前記凹部の前記底部の前記金属配線の表面粗さが前記透明基材の表面粗さよりも小であるとともに、 The surface roughness of the metal wiring at the bottom of the recess is smaller than the surface roughness of the transparent base material, and
前記金属配線の前記表面粗さは、Ｒａ＝２ｎｍ以上かつＲａ＝４ｎｍ以下である、フィルム構造体。 A film structure having a surface roughness of the metal wiring of Ra = 2 nm or more and Ra = 4 nm or less.
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