JP6821994B2 - Image sensor module - Google Patents

Description

The present disclosure relates to an image sensor module. In particular, the present invention relates to an image sensor module using a solid-state image sensor built in a portable electronic device or a tablet terminal.

A solid-state image sensor is widely known as an image sensor built into a portable electronic device or a tablet terminal. The solid-state image sensor has a light receiving surface in which pixels having a photoelectric conversion element are arranged on a semiconductor chip or the like. When the light emitted by the subject is imaged on the light receiving surface by an optical system such as a lens, the light of the image is converted into an amount of electric charge according to the brightness and darkness, and is converted into an electric signal. An output image can be obtained by acquiring this electric signal.

In recent years, the miniaturization, high quality, and high functionality of portable electronic devices have progressed, and there is a strong demand for miniaturization, high quality, and high accuracy of solid-state image sensors mounted on these electronic devices. There is.

For example, Patent Document 1 describes a solid-state image sensor mounted on a substrate, a bonding wire for electrically connecting a pad formed on the solid-state image sensor and a lead formed on the substrate, and a side portion of the solid-state image sensor. A frame-shaped frame member and an optical member having light transmission and attached to the frame member facing the image pickup surface of the solid-state image sensor are provided, and the frame member is a leg extending from the optical member side toward the image pickup surface. Disclosed is a solid-state image sensor in which a frame member and a solid-state image sensor are integrally fixed with a portion and an end portion of a bonding wire connected to a pad covered with a leg portion.

Japanese Unexamined Patent Publication No. 2012-222546

First, in order to promote the miniaturization of portable electronic devices and the like, it is desired to reduce the width of the solid-state image sensor in the optical axis direction as much as possible (reduce the height). However, in the conventional configuration described in Patent Document 1, it is necessary to provide a filter that blocks infrared rays. The filter can be one of the factors that hinder the reduction of the height of the solid-state image sensor.

An object of the present disclosure is to provide an image sensor module capable of reducing the height in view of the above circumstances.

The image sensor module according to the embodiment of the present disclosure has a first surface, a second surface opposite to the first surface, and a plurality of through holes penetrating the first surface and the second surface, and emits infrared rays. An image sensor located at a position facing the first surface of the interposer substrate and an interposer substrate containing a component to be absorbed. The interposer substrate side has a light receiving surface including a plurality of photoelectric conversion elements, and is formed in a plurality of through holes. An image sensor connected to an external circuit via an electrode and a lens unit facing the second surface side of the interposer substrate are provided.

The interposer substrate may contain P ₂ O ₅ , Al ₂ O ₃ , SiO ₂ , B ₂ O ₃ , and Cu O.

The interposer substrate may include a first light-shielding wall that is arranged so as to penetrate from the first surface to the second surface of the interposer substrate, is arranged around the light-receiving surface, and is provided with a gap.

The interposer substrate may include a second light-shielding wall provided corresponding to the gap.

The first light-shielding wall and the second light-shielding wall may be made of metal.

The first light-shielding wall and the second light-shielding wall may be made of black resin.

The interposer substrate may have a light absorption layer on the second surface in a region other than the light receiving surface.

The light absorption layer may be a metal.

The light absorption layer may be a black resin.

The lens unit may have frame-shaped legs that surround the light receiving surface and come into contact with the interposer substrate.

The legs may be in contact with the interposer substrate via a light-shielding adhesive.

It is sectional drawing explaining the structure of the image sensor module which concerns on embodiment of this disclosure. It is an exploded sectional view explaining the structure of the image sensor module which concerns on embodiment of this disclosure. FIG. 1 is a cross-sectional view taken along the line AA'in FIG. It is a cross-sectional view of BB'of FIG. It is a perspective view explaining the structure of the interposer substrate which concerns on embodiment of this disclosure. It is a top view explaining the structure of the interposer substrate which concerns on embodiment of this disclosure. It is sectional drawing explaining the detail of the image sensor which concerns on embodiment of this disclosure. It is sectional drawing explaining the interposer substrate of the image sensor module which concerns on embodiment of this disclosure. It is a top view explaining the interposer board of the image sensor module which concerns on embodiment of this disclosure. It is a top view explaining the structure of the interposer substrate which concerns on the modification of embodiment of this disclosure. It is a top view explaining the structure of the interposer substrate which concerns on the modification of embodiment of this disclosure. It is a top view explaining the structure of the interposer substrate which concerns on the modification of embodiment of this disclosure. It is a top view explaining the structure of the interposer substrate which concerns on the modification of embodiment of this disclosure. It is sectional drawing and top view explaining the through electrode formed in the interposer substrate which concerns on the modification of embodiment of this disclosure. It is sectional drawing explaining the structure of the image sensor module which concerns on embodiment of this disclosure. It is sectional drawing explaining the interposer substrate of the image sensor module which concerns on embodiment of this disclosure. It is sectional drawing explaining the interposer substrate of the image sensor module which concerns on embodiment of this disclosure. It is sectional drawing explaining the interposer substrate of the image sensor module which concerns on embodiment of this disclosure. It is a figure which shows the example of the application product which can mount the image sensor module which concerns on embodiment of this disclosure. It is a figure which shows the example of the application product which can mount the image sensor module which concerns on embodiment of this disclosure.

Hereinafter, the configuration of the image sensor module and the manufacturing method thereof according to the embodiment of the present disclosure will be described in detail with reference to the drawings. It should be noted that the embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not construed as being limited to these embodiments. In the drawings referred to in the present embodiment, the same parts or parts having similar functions are designated by the same reference numerals or similar reference numerals, and the repeated description thereof may be omitted. In addition, the dimensional ratio of the drawing may differ from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

<First Embodiment>
[Rough configuration of image sensor module 100]
The configuration of the image sensor module 100 according to the present embodiment will be described with reference to FIGS. 1 to 9.

FIG. 1 is a cross-sectional view illustrating the configuration of the image sensor module 100 according to the present embodiment. FIG. 2 is an exploded cross-sectional view illustrating the configuration of the image sensor module 100 according to the present embodiment. First, each unit constituting the image sensor module 100 will be described with reference to the exploded sectional view of FIG. The image sensor module 100 according to the present embodiment includes an interposer substrate 102, an image sensor 104, a lens unit 106, a heat radiating member 134, a first case 136, a cover 138, and a permanent magnet 140.

The interposer substrate 102 has a first surface 102a and a second surface 102b. The second surface 102b is a surface opposite to the first surface 102a. The interposer substrate 102 has a plurality of through holes 108 penetrating the first surface 102a and the second surface 102b. Each of the plurality of through holes 108 includes those having different purposes. In the present embodiment, the plurality of through holes 108 are classified into three types according to their respective purposes. In the following description, when they are distinguished, they are referred to as a first through hole 108a, a second through hole 108b, or a third through hole 108c.

Although details will be described later, the first through hole 108a is provided so as to surround the light receiving surface 104a described later. A light-shielding wall 111 having a light-shielding property is arranged inside the first through hole 108a. The light-shielding wall 111 is arranged so as to penetrate from the first surface 102a to the second surface 102b. As the light-shielding wall 111, for example, nickel (Ni), lead (Pb), gold (Au), copper (Cu) and the like can be used.

As the light-shielding wall 111, a black resin can be used in addition to the above metal. As the black resin, a material containing a photosensitive resin composition, a photopolymerization initiator, a pigment and a solvent can be used. By appropriately combining these compositions, a black resin composition can be obtained. As the photosensitive resin composition, a negative type photosensitive resin composition, an acrylic monomer, an oligomer, a polymer, a photoinitiator, a solvent and a pigment can be used. As the pigment, carbon black, titanium black such as titanium oxide or titanium oxynitride, a metal oxide such as iron oxide, an organic pigment or the like can be used.

In addition to the above, as the black resin, a material in which a pigment is dispersed in a non-photosensitive resin composition can be used. As the non-photosensitive resin composition, for example, a polyimide resin can be used. As the pigment, a pigment in which carbon black is dispersed can be used. Further, aniline black, acetylene black, phthalocyanine black, titanium black and the like may be dispersed as pigments.

The second through hole 108b is provided in the outer region of the first through hole 108a. Inside the second through hole 108b, a through electrode 110 for electrically connecting the image sensor 104 and an external circuit (not shown) is arranged. A solder ball 116 is arranged on the first surface 102a side of the through electrode 110. The through electrode 110 and the solder ball 116 are in contact with each other.

The third through hole 108c is provided in a region further outside the second through hole 108b. The third through hole 108c is used as an alignment when the lens unit 106 is arranged on the interposer substrate 102. Specifically, the lens unit 106 is positioned with respect to the interposer substrate 102 by inserting the support column 118 provided in the lens unit 106 into the third through hole 108c of the interposer substrate 102 from the second surface 102b side. It is matched.

The first through hole 108a, the second through hole 108b, and the third through hole 108c can be formed in the same process, and the light-shielding wall 111 and the through electrode 110 can be formed in the same process.

A translucent substrate is used as the interposer substrate 102. As the substrate having translucency, for example, a glass substrate can be used. As the glass substrate, for example, quartz glass, non-alkali glass, borosilicate glass, aluminosilicate glass, soda glass, titanium-containing silicate glass and the like can be used. As the interposer substrate 102, in addition to the above, a sapphire substrate, a silicon carbide (SiC) substrate, an alumina (Al ₂ O ₃ ) substrate, an aluminum nitride (AlN) substrate, a diriconia oxide (ZrO ₂ ) substrate, or the like can be used. As the interposer substrate 102, a substrate laminated with any combination of the substrates listed above may be used.

The interposer substrate 102 contains a component that absorbs infrared rays. The interposer substrate 102 contains, for example, copper oxide (CuO) that absorbs light having a wavelength in the near infrared region as a component that absorbs infrared rays. Since the interposer substrate 102 contains a component that absorbs infrared rays, the infrared cut filter that has been conventionally required can be omitted.

As an example of the material of the interposer substrate 102 having such properties, a phosphate glass or a glass obtained by adding copper oxide (CuO) to a phosphate glass can be used. Specifically, as the interposer substrate 102, a substrate containing P ₂ O ₅ , Al ₂ O ₃ , SiO ₂ , B ₂ O ₃ , and Cu O can be used. The interposer substrate 102 using the above material transmits light in a wavelength region of 400 nm or more and 520 nm or less, which is a visible light region, and effectively absorbs light in a wavelength region of 550 nm or more and 950 nm or less, which is a near infrared region. As a result, the interposer substrate 102 has the function of an infrared cut filter.

The content of CuO with respect to the interposer substrate 102 is preferably 0.1% by weight or more and 10% by weight or less. If the content of CuO is less than 0.1% by weight, the interposer substrate 102 cannot sufficiently absorb the near infrared region, and if it exceeds 10% by weight, CuO is reduced and the physical properties of the interposer substrate 102 are poor. Become stable.

P ₂ O ₅ contained in the interposer substrate 102 is a component constituting a part of the glass skeleton. The content of P ₂ O ₅ is preferably 35% by weight or more and 60% by weight or less. If the content of P ₂ O ₅ is less than 35% by weight, it is difficult to vitrify the interposer substrate 102, and if it exceeds 60% by weight, the weather resistance of the interposer substrate 102 is lowered. In particular, when the content of P ₂ O ₅ is 40% by weight or more and 50% by weight or less, the interposer substrate 102 vitrifies more stably, so that higher weather resistance can be obtained.

Al ₂ O ₃ contained in the interposer substrate 102 reinforces the structure of the glass and improves the weather resistance and water resistance of the interposer substrate 102. The content of Al ₂ O ₃ is preferably 10% by weight or more and 30% by weight or less. If Al ₂ O ₃ is less than 10% by weight, sufficient weather resistance and water resistance of the interposer substrate 102 cannot be obtained, and if it exceeds 30% by weight, the interposer substrate 102 tends to be devitrified. In particular, when the content of Al ₂ O ₃ is 15% by weight or more and 25% by weight or less, the weather resistance and water resistance of the interposer substrate 102 are further improved, and the interposer substrate 102 can be vitrified more stably. Further, it is preferable that the weight ratio of Al ₂ O ₃ / P ₂ O ₅ is 0.3 or more and 0.55 or less. If this ratio is less than 0.3, the weather resistance of the interposer substrate 102 decreases, and if it exceeds 0.55, the stability of the interposer substrate 102 decreases.

SiO ₂ contained in the interposer substrate 102 is a component forming a part of the glass skeleton, and gives the interposer substrate 102 sufficient weather resistance and water resistance. The content of SiO ₂ is preferably 1.5% by weight or more and 15% by weight or less. If SiO ₂ is less than 1.5% by weight, sufficient weather resistance and water resistance of the interposer substrate 102 cannot be obtained, and if it exceeds 15% by weight, the interposer substrate 102 tends to be devitrified. In particular, when the content of SiO ₂ is 2.5% by weight or more and 10% by weight or less, the weather resistance and water resistance of the interposer substrate 102 are further improved, and the interposer substrate 102 can be vitrified more stably. ..

B ₂ O ₃ contained in the interposer substrate 102 is a component that reinforces the structure of the glass and facilitates the vitrification of the interposer substrate 102. The content of B ₂ O ₃ is preferably 3% by weight or more and 15% by weight or less. If B ₂ O ₃ is less than 3% by weight, the interposer substrate 102 is difficult to vitrify, and if it exceeds 15% by weight, the weather resistance of the interposer substrate 102 is lowered.

In addition to the above components, the interposer substrate 102 is more easily vitrified, so that the interposer substrate 102 is MgO, CaO, SrO, BaO, ZnO, Li ₂ O, Na ₂ O, K ₂ O, As ₂ O ₃ , Sb. ₂ O ₃ and SnO ₂ may be contained in a total amount of 30% by weight.

Among these, when the interposer substrate 102 contains MgO, CaO, SrO, BaO, and ZnO in the range of 0% by weight or more and 20% by weight or less, the melting temperature of the interposer substrate 102 is lowered, and the interposer substrate 102 is vitrified. Make it easier. However, when the content of the above material exceeds 20% by weight, the weather resistance of the interposer substrate 102 is lowered.

When the interposer substrate 102 contains Li ₂ O, Na ₂ O, and K ₂ O in the range of 0% by weight or more and 10% by weight or less, the melting temperature of the interposer substrate 102 is lowered, and the interposer substrate 102 is easily vitrified. .. However, when the content of the above material exceeds 10% by weight, the weather resistance of the interposer substrate 102 is lowered.

When the interposer substrate 102 contains As ₂ O ₃ , Sb ₂ O ₃ , and SnO ₂ in the range of 0% by weight or more and 5% by weight or less, CuO contained in the interposer substrate 102 is less likely to be reduced, and the interposer substrate 102 It has the effect of preventing the spectral characteristics of the above from deviating from the target characteristics. However, even if the content of the above material exceeds 5% by weight, the effect is not improved.

As described above, since the interposer substrate 102 has translucency, the light reflected by the subject is incident on the light receiving surface 104a of the image sensor 104 arranged below the interposer substrate 102. Since the interposer substrate 102 contains a component that absorbs infrared rays, the infrared rays of the light reflected by the subject are absorbed by the interposer substrate 102 and hardly reach the image sensor 104.

Both surfaces of the interposer substrate 102 have functions as assembly reference surfaces for optical systems such as the lens unit 106 and the image sensor 104. Here, it is preferable that the normal of the light receiving surface 104a of the image sensor 104 and the optical axis of the image pickup lens group 120 arranged in the lens unit 106 are aligned with high accuracy. Therefore, as the interposer substrate 102, it is desirable to use a substrate having high flatness on both surfaces and high parallelism on both surfaces.

The image sensor 104 is arranged at a position facing the first surface 102a of the interposer substrate 102. The image sensor 104 is connected to an external circuit (not shown) via electrodes in the plurality of second through holes 108b. Further, the image sensor 104 has a light receiving surface 104a on the interposer substrate 102 side. A plurality of photoelectric conversion elements are arranged in a matrix on the light receiving surface 104a. In this embodiment, a CMOS image sensor is used as the photoelectric conversion element. However, a CCD image sensor or the like may be used as the photoelectric conversion element. The CMOS image sensor used in this embodiment and the circuit arranged around the light receiving surface 104a will be described in detail later.

The lens unit 106 is arranged at a position facing the second surface 102b of the interposer substrate 102.

The lens unit 106 includes a support column 118, an imaging lens group 120, a second case 122, a third case 124, a transparent resin substrate 126, a coil 130, and a spring 132. The third case 124 includes a leg portion 124a and a third case lower portion 124b. A space 124c is provided between the leg portion 124a and the lower portion 124b of the third case.

The image pickup lens group 120 is composed of a plurality of lenses, and images the light reflected by the subject and incident on the image sensor module 100 on the light receiving surface 104a of the image sensor 104.

The second case 122 supports the imaging lens group 120. In the present embodiment, the second case 122 contains the image pickup lens group 120. The second case 122 has a cylindrical shape, and the inner wall of the cylinder of the second case 122 supports the periphery of the imaging lens group 120. A coil 130 is wound around the outer wall of the cylinder of the second case 122. The coil 130 is provided to control the position of the image pickup lens group 120. The position of the imaging lens group 120 is controlled by the interaction between the permanent magnet 140 and the magnetic field induced by the current supplied to the coil 130.

The third case 124 is connected to the second case 122 via a plurality of springs 132, and contains the second case 122. That is, the second case 122 is swingably arranged with respect to the third case 124. The third case 124 has a square columnar shape.

The leg portion 124a is provided inside the lower portion 124b of the third case of the third case 124. The lower portion 124b of the third case extends from the third case 124 beyond the support column 118 to the inside of the third case 124. The leg portion 124a is connected to the third case 124 extending inward and extends toward the interposer substrate 102. The leg portion 124a is arranged at a position where it overlaps with the light-shielding wall 111 in a plan view. A material having a light-shielding property is used for the leg portion 124a. A space 124c is provided between the leg portion 124a and the lower portion 124b of the third case of the third case 124. The space 124c is provided at a position where it overlaps with the through electrode 110 in a plan view. The space 124c is provided to avoid interference between the wiring on the second surface 102b side connected to the through electrode 110 and the third case 124. The leg portion 124a is provided so as to surround the light receiving surface 104a in a plan view. In other words, the shape of the leg portion 124a in a plan view is a frame shape surrounding the light receiving surface 104a.

As shown in FIG. 1, the leg portion 124a is connected to the light-shielding wall 111 via a light-shielding adhesive 125. By connecting the leg portion 124a and the light-shielding wall 111 with the light-shielding adhesive 125, it is possible to prevent light from leaking from between the leg portion 124a and the light-shielding wall 111 to the outer region of the light-shielding wall 111. it can. As the light-shielding adhesive 125, in the resin component of organic materials such as epoxy, acrylic, silicone, and thiol, a pigment such as carbon black is added as a reflectance inhibitor to make black. A colored system can be used. The adhesive may be cured by heat or ultraviolet rays, or may be dried at room temperature. The leg portion 124a and the light-shielding wall 111 may be in direct contact with each other without the intervention of the light-shielding adhesive 125.

The plurality of columns 118 are provided in the lens unit 106. Each of the plurality of columns 118 is inserted into a plurality of third through holes 108c of the interposer substrate 102. As a result, the lens unit 106 can be detachably arranged on the second surface 102b of the interposer substrate 102.

The number of columns 118 is preferably 3 or more in order to stably arrange the lens unit 106 on the interposer substrate 102. The plurality of columns 118 are arranged so as not to be positioned on a straight line in a plan view, and are arranged so as not to overlap with the photoelectric conversion element of the light receiving surface 104a. The column 118 has a diameter sufficient for the lens unit 106 to be stably arranged on the interposer substrate 102.

Of the plurality of columns 118, the two columns 118 have conductivity and are connected to both ends of the coil 130. A current is supplied to the coil 130 via these two columns 118 to control the position of the image pickup lens group 120. With such a configuration, the support column 118 has two functions of alignment between the lens unit 106 and the interposer substrate 102, and wiring connected to the coil 130.

The transparent resin substrate 126 has translucency and is arranged at a position facing the image pickup lens group 120. The transparent resin substrate 126 is provided so that a part of the image pickup lens group 120 and the third case 124 can be visually recognized from the outside. The transparent resin substrate 126 is connected to the third case 124.

The heat radiating member 134 is arranged on a surface opposite to the light receiving surface 104a of the image sensor 104. The heat radiating member 134 has a higher thermal conductivity than the image sensor 104, and transfers the heat generated by the image sensor 104 to other members to suppress the temperature rise of the image sensor 104. As a result, malfunctions due to self-heating of the image sensor 104 can be suppressed, and the operation of the image sensor 104 can be stabilized.

The first case 136 has a recess 137. The image sensor 104 and the heat radiating member 134 are arranged in the recess 137, and the first case 136 and the interposer substrate 102 are fixed. The cover 138 is arranged outside the third case 124. The cover 138 is in contact with the upper surface of the third case 124. As the material of the cover 138, metal, ceramic or the like can be used.

The permanent magnet 140 is arranged between the side surface of the third case 124 and the side surface of the cover 138. The permanent magnet 140 is arranged so as to surround the coil 130. In the present embodiment, one permanent magnet 140 is arranged on each of the four side surfaces of the second case 122. The layout of the permanent magnets 140 shown in FIGS. 1 and 2 is an example, and is not limited thereto.

FIG. 3 is a cross-sectional view taken along the line AA'of FIG. FIG. 3 shows one of the plurality of lenses included in the imaging lens group 120 (hereinafter referred to as lens 120), the side wall of the second case 122, the coil 130, the plurality of springs 132, the third case 124, and the permanent magnet. The side walls of 140 and cover 138 are shown. The shape of each member in the following description means a shape in a plan view. A circular second case 122 is arranged around the circular lens 120. A circular coil 130 is arranged around the second case 122. A rectangular third case 124 is arranged around the second case 122 with a gap from the second case 122. The spring 132 is connected to each of the second case 122 and the third case 124 between the second case 122 and the third case 124. The spring 132 is connected to each corner of the rectangular third case 124. A rectangular cover 138 is arranged around the third case 124 at a distance from the third case 124. The permanent magnet 140 is connected between the third case 124 and the cover 138 to each of the third case 124 and the cover 138. The permanent magnets 140 are connected to the sides of the rectangular third case 124, respectively.

FIG. 4 is a cross-sectional view taken along the line BB'of FIG. FIG. 4 shows the peripheral edge of the light receiving surface 104a, the support column 118, the third case 124, the leg portion 124a, the lower portion 124b of the third case, the space 124c, and the side wall of the cover 138. The shape of each member in the following description is rectangular in a plan view. The leg portion 124a is arranged at a position corresponding to the peripheral edge portion of the light receiving surface 104a. A third case lower portion 124b is arranged around the leg portion 124a with a space 124c separated from the leg portion 124a. A third case 124 is arranged around the lower portion 124b of the third case. A strut 118 is arranged between the lower portion 124b of the third case and the third case 124. The columns 118 are arranged at the corners of the lower portion 124b of the third case. A cover 138 is arranged around the side wall of the third case 124 at a distance from the third case 124. As described above, the leg portion 124a has a rectangular frame shape and surrounds the light receiving surface 104a.

In the image sensor module 100 according to the present embodiment, since the interposer substrate 102 has a function of an infrared cut filter, it is not necessary to separately provide an infrared cut filter in addition to the interposer substrate 102. This makes it possible to reduce the height of the image sensor module 100.

[Structure of Interposer Board 102]
Next, the configuration of the interposer substrate 102 of the image sensor module 100 according to the present embodiment will be described in more detail. FIG. 5 is a perspective view illustrating the configuration of the interposer substrate according to the present embodiment. FIG. 6 is a plan view illustrating the configuration of the interposer substrate according to the present embodiment. In FIGS. 5 and 6, for convenience of explanation, the light-shielding wall 111 is arranged only in the first through hole 108a, and no filling is arranged in the second through hole 108b and the third through hole 108c, respectively. showed that.

In the present embodiment, the light-shielding wall 111 arranged in the first through hole 108a is arranged corresponding to the side portion of the rectangular light-receiving surface 104a in a plan view. If the first through hole 108a is formed to continuously surround the light receiving surface 104a, the interposer substrate 102 in the region inside the first through hole 108a will fall off when the first through hole 108a is formed. Therefore, the inner region and the outer region of the first through hole 108a (or the light-shielding wall 111) need to be continuous. In the present embodiment, the inner region and the outer region are continuous at the corners of the rectangular light receiving surface 104a. In other words, the first through hole 108a (or the light-shielding wall 111) is provided with a gap 111c. In other words, a plurality of first through holes 108a (or light-shielding walls 111) are arranged, and adjacent first through holes 108a (or light-shielding walls 111) are arranged with a gap 111c.

A plurality of second through holes 108b are arranged along the side portion of the rectangular light receiving surface 104a. Two rows of second through holes 108b are provided on each side. The second through holes 108b of each row are provided at different positions in the extension direction of each side portion. That is, the plurality of second through holes 108b are arranged in a zigzag shape.

The third through hole 108c is arranged at a corner of the rectangular interposer substrate 102. The diameter of the third through hole 108c is larger than the diameter of the second through hole 108b.

The shapes of the second through hole 108b and the third through hole 108c in a plan view are not limited to a circle. For example, various shapes such as a rectangle, an ellipse, or a polygon can be adopted.

The number and layout of the second through hole 108b and the third through hole 108c are not limited to the above configuration. The number of the second through holes 108b may be greater than or equal to the number required to form the wiring connecting the image sensor module 100 and the external circuit. The layout of the plurality of second through holes 108b in a plan view may not overlap with the plurality of photoelectric conversion elements arranged on the light receiving surface 104a.

The number of the third through holes 108c shown in FIGS. 5 and 6 is 4, but is not limited to this number. For example, the number of the third through holes 108c may be three or five or more. Similar to the second through hole 108b, the layout of the plurality of third through holes 108c in a plan view may not overlap with the plurality of photoelectric conversion elements arranged on the light receiving surface 104a. That is, in FIGS. 5 and 6, the third through hole 108c is arranged in the outer region of the interposer substrate 102 with respect to the second through hole 108b, but may be arranged in the inner region with respect to the second through hole 108b. .. The diameter of the third through hole 108c may be large enough to insert the support column 118. The support column 118 may have sufficient strength to stably arrange the lens unit 106 on the interposer substrate 102.

In the above description, a configuration in which the gap 111c is provided in the first through hole 108a is illustrated, but the configuration is not limited to this configuration. For example, if the interposer substrate 102 in the inner region of the first through hole 108a does not fall off, the first through hole 108a may be in a shape that continuously surrounds the light receiving surface 104a. For example, first, a first through hole 108a on the opposite side is formed, and a light-shielding wall 111 is formed therein. Subsequently, a first through hole 108a is formed in the region between the facing light-shielding walls 111, and the light-shielding wall 111 is formed therein, so that the interposer substrate 102 in the inner region of the first through hole 108a does not come off. The first through hole 108a having a shape that continuously surrounds the light receiving surface 104a can be formed.

[Configuration of image sensor 104]
A CMOS image sensor used as a photoelectric conversion element arranged on the light receiving surface 104a will be described with reference to FIG. 7. FIG. 7 is a cross-sectional view illustrating the details of the image sensor according to the embodiment of the present disclosure. As shown in FIG. 7, the CMOS image sensor has a photodiode 148, a wiring layer 150, a color filter 152, a microlens 154, and a flattening layer 156.

The photodiode 148 converts the incident light into an electric charge. When light is incident on the photodiode 148, a part of the incident light generates an electron-hole pair near the PN junction of the photodiode 148. At this time, by applying a reverse bias to the photodiode 148, the generated carrier pair information can be taken out as a current. The wiring layer 150 is arranged above the photodiode 148. The wiring layer 150 includes elements such as a wiring and a transistor for detecting a signal of a carrier pair generated by the photodiode 148. These wirings, elements, and the like are arranged so as to avoid the upper part of the photodiode 148 in order to efficiently take in external light into the photodiode 148.

The color filter 152 selects the color of the light incident on the photodiode 148. Each of the plurality of CMOS image sensors has a color filter 152 that transmits at least one of the three colors of RGB. The microlens 154 collects the incident light on the photodiode 148. The flattening layer 156 relaxes the step formed by the structure arranged below the flattening layer 156, and flattens the arrangement surface of the microlens 154.

[Structure around the interposer board 102]
FIG. 8 is a cross-sectional view illustrating an interposer substrate of the image sensor module according to the present embodiment. FIG. 9 is a top view illustrating an interposer substrate of the image sensor module according to the present embodiment. A light-shielding wall 111 is arranged inside the first through hole 108a. A through electrode 110 is arranged inside the second through hole 108b. A support column 118 is arranged inside the third through hole 108c. A solder ball 116 is arranged on the first surface 102a side of the through electrode 110. The wiring 142 is arranged on the second surface 102b side of the through electrode 110.

The plurality of through electrodes 110 are connected to wiring (not shown) arranged around the light receiving surface 104a of the image sensor 104 via the solder balls 116 arranged on the first surface 102a side. That is, the image sensor 104 is flip-chip connected to the interposer board 102.

The plurality of through electrodes 110 are connected to the wiring 142 arranged on the second surface 102b side. That is, the wiring 142 is connected to the wiring (not shown) arranged around the light receiving surface 104a of the image sensor 104 via the plurality of through electrodes 110. The wiring 142 is connected to an external circuit such as an FPC (Flexible Printed Circuit) 144 via a connection terminal 145. In the top view of FIG. 9, only the wiring 142 drawn out from some through silicon vias 110 is shown, and the wiring 142 drawn out from the other through silicon via 110 is omitted.

[Method of forming through hole 108, through electrode 110 and light-shielding wall 111]
A method of forming the through hole 108, the through electrode 110, and the light-shielding wall 111 will be described. The through hole 108 (first through hole 108a, second through hole 108b, or third through hole 108c) can be formed in the same process. The through hole 108 can be formed by using laser irradiation, wet etching, dry etching, or the like. As the laser used for laser irradiation, an excimer laser, an Nd: YAG laser (a fundamental wave (wavelength: 1064 nm), a second harmonic (wavelength: 532 nm), a third harmonic (wavelength: 355 nm), etc. can be used), Alternatively, a femtosecond laser or the like can be used. As the chemical solution used for wet etching, any of hydrogen fluoride (HF), sulfuric acid (H ₂ SO ₄ ), nitric acid (HNO ₃ ), hydrochloric acid (HCl), or a chemical solution using a mixture thereof may be used. it can. Further, the above laser irradiation and wet etching can be appropriately combined. That is, the altered layer can be formed in the through-hole forming region of the interposer substrate 102 by laser irradiation, and the altered layer can be etched by immersing the altered layer in the HF. As the dry etching, a RIE (Reactive Ion Etching) method using plasma, a DRIE (Deep RIE) method using a Bosch process, a sandblasting method, or the like can be used. In the above, the method of forming all the through holes 108 in the same process has been illustrated, but at least one of the first through holes 108a, the second through holes 108b, and the third through holes 108c is formed through the other through holes 180. It may be formed by a process different from 180.

Next, a method of forming the through electrode 110 and the light-shielding wall 111 formed in the through hole 108 will be described. The through electrode 110 and the light-shielding wall 111 can be formed in the same process. As a method for forming the through electrode 110 and the light-shielding wall 111, for example, a method such as filling plating, sputtering, vapor deposition, or conformal plating can be used. The conformal plating method is a method of forming a through electrode 110 and a light-shielding wall 111 having a hollow structure by forming a plating layer on the side wall portion of the through hole 180. In the above, the method of forming the through electrode 110 and the light-shielding wall 111 in the same process has been illustrated, but the through electrode 110 and the light-shielding wall 111 may be formed in different steps.

<Modified example of the first embodiment>
A modified example of the first embodiment will be described with reference to FIGS. 10 to 14. In the modified example, the layout of the through hole 180 and the light-shielding wall 111 and the modified example of the cross-sectional structure of the through electrode 110 and the light-shielding wall 111 will be described.

[Layout of through hole 180 and light-shielding wall 111]
10 to 13 are plan views illustrating the configuration of an interposer substrate according to a modified example of the embodiment of the present disclosure. In FIGS. 10 to 13, similarly to FIG. 6, the light-shielding wall 111 is arranged only in the first through hole 108a, and the filling is not arranged in the second through hole 108b and the third through hole 108c, respectively. showed that.

FIG. 10 is similar to FIG. 6, but differs from FIG. 6 in that the third through hole 108c is provided at substantially the same position as the second through hole 108b instead of the corner portion of the interposer substrate 102. .. In FIG. 10, a layout in which the third through hole 108c is provided in a region different from the region in which the plurality of second through holes 108b are provided is illustrated, but the layout is not limited to this layout. For example, the third through hole 108c may be provided in the region where the plurality of second through holes 108b are provided. In other words, the third through hole 108c may be arranged between the adjacent second through holes 108b.

FIG. 11A is similar to FIG. 6, but in FIG. 6, a gap 111c is provided in the long side direction of the rectangle of the interposer substrate 102, whereas in FIG. 11A, the interposer substrate 102 is provided. FIG. 11A differs from FIG. 6 in that the gap 111c is provided in the short side direction of the rectangle. In other words, in FIG. 6, a pair of light-shielding walls 111 extending in the long-side direction of the rectangle are arranged in a region sandwiched by the pair of light-shielding walls 111 extending in the short-side direction of the rectangle. In FIG. 11A, a pair of light-shielding walls 111 extending in the short-side direction of the rectangle are arranged in a region sandwiched by the pair of light-shielding walls 111 extending in the long-side direction of the rectangle. In that respect, FIG. 11A differs from FIG.

FIG. 11 (b) is similar to FIG. 6, but FIG. 11 (b) is different from FIG. 6 in that the second light-shielding wall 111b is provided outside the first light-shielding wall 111a. The second light-shielding wall 111b is provided corresponding to the gap 111c. The second light-shielding wall 111b suppresses light from leaking from the gap 111c between the adjacent first light-shielding walls 111a to the outer region of the light-shielding wall 111. In other words, the second light-shielding wall 111b suppresses the ingress and egress of light between the region corresponding to the light-receiving surface 104a and the outer region of the light-receiving surface 104a. Specifically, the second light-shielding wall 111b corresponds to the position of the gap 111c so that only the second light-shielding wall 111b can be seen from the gap 111c no matter where in the area surrounded by the first light-shielding wall 111a. Be placed. By suppressing the ingress and egress of light between the light receiving surface 104a and the outer region of the light receiving surface 104a, flare caused by stray light can be further suppressed.

FIG. 11C is similar to FIG. 11A, but differs from FIG. 11A in that the second light-shielding wall 111b is arranged corresponding to the position of the gap 111c. Similar to the configuration of FIG. 11B, the configuration of FIG. 11C is also caused by stray light by suppressing the inflow and outflow of light between the region corresponding to the light receiving surface 104a and the outer region of the light receiving surface 104a. The flare that occurs can be further suppressed.

FIG. 12A is similar to FIG. 11B, but the gap 111c of the first light-shielding wall 111a is provided at two corners of the rectangular light receiving surface 104a, and the gap 111c is provided in the two corners. It differs from FIG. 11 (b) in that the second light-shielding wall 111b is arranged at the corresponding position. As described above, by providing the gap 111c only in a part of the four corners, it is possible to further suppress the ingress and egress of light between the light receiving surface 104a and the outer region of the light receiving surface 104a. .. Therefore, flare caused by stray light can be further suppressed.

Note that FIG. 12A illustrates a configuration in which the gap 111c and the second shading wall 111b are provided at the upper left and upper right corners, but the configuration is not limited to this, and the gap 111c and the second shading wall 111b are not limited to this configuration. It may be provided at any corner. Further, in FIG. 12A, a configuration in which the gap 111c and the second light-shielding wall 111b are provided in two of the four corners is illustrated, but the number of corners may be three. , As will be described later, there may be one.

FIG. 12B is similar to FIG. 12A, but the gap 111c of the first light-shielding wall 111a is provided on the side of the rectangular light-receiving surface 104a, and the position corresponding to the two gaps 111c. It differs from FIG. 12 (a) in that the second light-shielding wall 111b is arranged on the surface. As described above, the position where the gap 111c and the second light-shielding wall 111b are provided is not limited to the corner portion, but may be a side portion.

FIG. 13A is similar to FIG. 11B, but the gap 111c of the first light-shielding wall 111a is provided at one corner of the rectangular light receiving surface 104a, and the gap 111c is provided in the two gaps 111c. It differs from FIG. 11 (b) in that the second light-shielding wall 111b is arranged at the corresponding position. As described above, by providing the gap 111c only in a part of the four corners, it is possible to further suppress the ingress and egress of light between the light receiving surface 104a and the outer region of the light receiving surface 104a. .. Therefore, flare caused by stray light can be further suppressed. Note that FIG. 13A illustrates a configuration in which the gap 111c and the second light-shielding wall 111b are provided only in the upper left corner, but the configuration is not limited to this configuration, and which of the gap 111c and the second light-shielding wall 111b is provided? It may be provided at the corner.

FIG. 13B is similar to FIG. 13A, but the gap 111c of the first light-shielding wall 111a is provided on the side of the rectangular light-receiving surface 104a, and the position corresponding to the two gaps 111c. The second light-shielding wall 111b is arranged on the inside of the first light-shielding wall 111a, that is, the second light-shielding wall 111b is arranged on the light-receiving surface 104a side, which is different from FIG. 13A. .. As described above, the position where the gap 111c and the second light-shielding wall 111b are provided is not limited to the corner portion, but may be a side portion. Further, the position where the second light-shielding wall 111b is provided may be inside the first light-shielding wall 111a. This feature is not limited to FIG. 13 (b) and can be applied to other embodiments.

[Cross-sectional structure of through silicon via 110 and light-shielding wall 111]
FIG. 14 is a cross-sectional view and a top view illustrating a through electrode and a light-shielding wall formed on an interposer substrate according to a modified example of the embodiment of the present disclosure. In FIG. 14, a detailed cross-sectional structure of the through electrode 110 is shown on behalf of the through electrode 110 and the light-shielding wall 111 shown in FIG.

(A1) to (e1) shown in the upper part of FIG. 14 are detailed cross-sectional structures of the through electrodes 110 shown in FIG. 8, and (a2) to (e2) shown in the lower part are the respective through electrodes. It is a top view of 110. The through electrodes 110 in FIG. 8 are (a1) and (a2) in FIG.

14 (a1) and 14 (a2) are through silicon vias 110-1 formed by the filling plating method. The through electrode 110-1 fills the inside of the second through hole 108b. That is, the inside of the second through hole 108b is filled with the through electrode 110-1. Through electrodes 110-1 are formed, for example, by the following method. A seed layer is formed from one side of the interposer substrate 102 on which the second through hole 108b is formed. A plating layer is grown on the seed layer by an electrolytic plating method to close one open end of the second through hole 108b. It can also be said that lid plating is formed because one open end of the second through hole 108b is closed by the plating layer. The plating method for forming lid plating is called the lid plating method. Then, the plating layer is grown by the electrolytic plating method using the lid plating as a seed, and the inside of the second through hole 108b is filled with the plating layer. The plating layer is formed not only inside the second through hole 108b but also on the surface of the interposer substrate 102, but the plating layer formed on the surface of the interposer substrate 102 is flat such as CMP (Chamical Mechanical Polishing). It is removed by the conversion process.

14 (b1) and 14 (b2) are through silicon vias 110-2 formed by sputtering or vapor deposition. The through electrode 110-2 is arranged on the side wall of the second through hole 108b, and a cavity is provided inside the through electrode 110-2. That is, the through electrode 110-2 has a hollow structure. Through electrodes 110-2 are formed, for example, by the following method. A metal layer is formed by sputtering or vapor deposition from one open end side of the second through hole 108b, and a metal layer is formed on a part of the side wall of the through hole 108. When the film is formed from one opening end side of the second through hole 108b, the metal layer may not be formed on the side wall on the other opening end side of the second through hole 108b. Therefore, a metal layer is formed from the other opening end side of the second through hole 108b by sputtering or vapor deposition, and the metal layer is formed on the side wall of the through hole 108 where the metal layer is not formed or the film thickness is thin. To form. The metal layer is formed not only inside the second through hole 108b but also on the surface of the interposer substrate 102, but the metal layer formed on the surface of the interposer substrate 102 is removed by a flattening treatment such as CMP. To. In addition to sputtering or vapor deposition, a metal layer can be formed on the side wall of the second through hole 108b by an electroless plating method.

14 (c1) and 14 (c2) are through silicon vias 110-3 formed by the conformal plating method. The through electrode 110-3 is arranged on the side wall of the second through hole 108b, and a cavity is provided inside the through electrode 110-3. That is, the through silicon via 110-3 has a hollow structure. Through electrodes 110-3 are formed, for example, by the following method. The plating layer is grown by the electrolytic plating method using the metal layer formed on the side wall of the second through hole 108b by the above sputtering, vapor deposition, or electroless plating as a seed layer. The plating layer formed by the electric field plating method is formed so that a cavity is provided inside the second through hole 108b without filling the second through hole 108b. The method of forming a plating layer having a hollow structure as described above is called a conformal plating method. When the plating layer is formed from the state shown in FIGS. 14 (b1) and 14 (b2), the plating layer is not formed on the surface of the interposer substrate 102. However, the plating layer formed by using the metal layer near the opening end of the second through hole 108b as a seed may have a shape protruding outward from the surface of the interposer substrate 102. The protruding portion is removed by a flattening treatment such as CMP.

14 (d1) and 14 (d2) have a structure in which the inside of the through silicon via 110-4 formed by the above conformal plating method is filled with the filler 146-4. A resin material can be used as the filler 146-4. As the resin material, a black resin having a light-shielding property can be used. Through electrodes 110-4 and filler 146-4 are formed, for example, by the following methods. Through electrodes 110-4 are formed by the methods shown in FIGS. 14 (c1) and 14 (c2). Filler 146-4 is formed in the hollow portion of the through electrode 110-4. The filler 146-4 can be formed by a coating method, a dipping method, and an inkjet method.

Other methods for forming the filler 146-4 will be described below. A resin film is attached to both sides of the interposer substrate 102 so as to seal the hollow portion of the through electrode 110-4 in a vacuum or a reduced pressure atmosphere. By exposing the interposer substrate 102 to the atmospheric pressure atmosphere with the resin film attached, the resin film attached near the opening end of the hollow portion is pushed into the hollow portion by the atmospheric pressure. In this way, the filler 146-4 may be formed in the hollow portion. When the above method is used, if one open end of the hollow portion is covered with another member, a resin film is attached only to one surface of the interposer substrate 102 to form the filler 146-4 in the hollow portion. You can also do it.

Since the through silicon via 110-4 needs to have conductivity, it needs to include a metal layer. On the other hand, since the light-shielding wall 111 does not need to have conductivity, it does not have to contain a metal layer. When the through silicon via 110-4 is formed by the above method, the metal layer may not be formed on the light-shielding wall 111, and only the filler 146-4 may be formed. That is, the through electrodes 110-4 and the light-shielding wall 111 may have different cross-sectional structures.

14 (e1) and 14 (e2) have a structure in which the inside of the through silicon via 110-5 formed by the lid plating method is filled with the filler 146-5. As the filler 146-5, the same material as the filler 146-4 described in FIGS. 14 (d1) and 14 (d2) can be used. Through electrode 110-5 filler 146-5 is formed by, for example, the following method. Through electrodes 110-5 are formed by the lid plating method described with reference to FIGS. 14 (a1) and 14 (a2). Then, the filler 146-5 is formed by the method described with reference to FIGS. 14 (d1) and 14 (d2) from the side opposite to the side of the second through hole 108b blocked by the through electrode 110-5. Similar to the above, only the filler 146-5 may be formed on the light shielding wall 111.

The configuration of the image sensor module 100 and the interposer substrate 102 according to the modified example of the present embodiment have been described above. Since the interposer board 102 of the image sensor module 100 according to the modification of the present embodiment has the function of an infrared cut filter, it is not necessary to separately provide an infrared cut filter in addition to the interposer board 102. This makes it possible to reduce the height of the image sensor module 100.

<Second Embodiment>
The configuration of the image sensor module 200 according to the present embodiment will be described in detail with reference to FIGS. 15 and 16. FIG. 15 is a cross-sectional view illustrating the configuration of the image sensor module 200 according to the present embodiment. FIG. 16 is a cross-sectional view illustrating the interposer substrate 102 of the image sensor module 200 according to the present embodiment.

The image sensor module 200 according to the present embodiment has a different configuration from the interposer substrate 102 and the lens unit 106 as compared with the image sensor module 100 according to the first embodiment.

The leg portion 124a provided on the lens unit 106 in the first embodiment is not provided in the present embodiment. Since the image sensor module 200 of FIG. 15 is not provided with the leg portion 124a, the height of the third case 124 can be reduced. As a result, the image sensor module 200 can be further reduced in height. In this case, the support column 118 can be arranged so as to be inserted into the inside of the third case 124.

On the second surface 102b side of the interposer substrate 102 according to the present embodiment, a light absorption layer 112 provided with an opening for exposing the light receiving surface 104a of the image sensor 104 is arranged. The open end of the light absorption layer 112 overlaps with the light shielding wall 111 in a plan view. The light absorption layer 112 is arranged in a region overlapping the through electrode 110 in a plan view, and extends to the outer peripheral end portion of the interposer substrate 102. The light absorption layer 112 may be arranged at least in the region from the light shielding wall 111 to the third case 124. As the light absorbing layer 112, a black resin can be used as in the light-shielding wall 111.

As the black resin, a material containing a photosensitive resin composition, a photopolymerization initiator, a pigment and a solvent can be used. By appropriately combining these compositions, a black resin composition can be obtained. As the photosensitive resin composition, a negative type photosensitive resin composition, an acrylic monomer, an oligomer, a polymer, a photoinitiator, a solvent and a pigment can be used. As the pigment, carbon black, titanium black such as titanium oxide or titanium oxynitride, a metal oxide such as iron oxide, an organic pigment or the like can be used.

In addition to the above, as the black resin, a material in which a pigment is dispersed in a non-photosensitive resin composition can be used. As the non-photosensitive resin composition, for example, a polyimide resin can be used. As the pigment, a pigment in which carbon black is dispersed can be used. Further, aniline black, acetylene black, phthalocyanine black, titanium black and the like may be dispersed as pigments.

As the light-shielding wall 111, for example, Ni, Pb, Au, Cu, etc. can be used in addition to the above black resin. When a metal layer is used as the light absorption layer 112, it is preferable that the light absorption layer 112 is patterned in order to prevent a short circuit between the wirings 142. Alternatively, as the light absorption layer 112, a metal layer may be formed only on the inner wall of the through hole 108, and a black resin described later may be formed on the second surface 102b.

The detailed structure of the interposer substrate 102 will be described with reference to FIG. As shown in FIG. 16, the light absorption layer 112 is arranged in contact with the interposer substrate 102. The light absorption layer 112 is arranged between the through electrode 110, the wiring 142, and the support column 118, and the interposer substrate 102. On the other hand, the light absorption layer 112 is arranged on the light shielding wall 111. Although the light-shielding wall 111 and the light absorption layer 112 are shown by separate members, the light-shielding wall 111 and the light absorption layer 112 may be continuous with the same member. The light absorption layer 112 may be arranged between the light shielding wall 111 and the interposer substrate 102. The light absorption layer 112 may be arranged above the through electrode 110 and the wiring 142.

By having such a configuration, it is possible to prevent light incident from the outside from entering the inside of the interposer substrate 102 in the region outside the light-shielding wall 111. With this configuration, it is possible to prevent the light that has entered the inside of the interposer substrate 102 from being diffusely reflected by, for example, the through electrode 110 and reaching the light receiving surface 104a as stray light. Therefore, it is possible to suppress the occurrence of flare caused by stray light.

The light absorption layer 112 is formed by, for example, the following method. Here, a case where a black resin is used as the light absorption layer 112 will be described. A resist mask covering the inner region of the first through hole 108a is formed on the second surface 102b. A black resin is applied to the entire surface of the interposer substrate 102 from above the resist mask. With the black resin formed on the resist mask, the black resin on the resist mask is lifted off by peeling the resist mask with a stripping solution. In this way, a black resin (light absorption layer 112) that opens the inner region of the first through hole 108a can be formed. When the black resin is applied, the black resin applied to the through hole 108 passes through the through hole 108 and flows downward, so that the black resin does not fill the through hole 108. However, when the black resin is filled inside the through hole 108, the black resin may be applied with a lid formed below the through hole 108.

The case where a metal layer is used as the light absorption layer 112 will be described below. The light-shielding wall 111 and the light absorption layer 112 are sequentially formed on the interposer substrate 102 in which the plurality of through holes 108 are formed. The light absorption layer 112 is formed by forming a resist mask covering the inner region of the light shielding wall 111 on the second surface 102b and performing an electroless plating method. The electroless plating method is performed by adsorbing a catalyst on the second surface 102b as a pretreatment for plating growth and immersing the interposer substrate 102 in a plating solution. No plating layer is formed in the area covered with the resist mask. Therefore, the plating layer is formed so as to open the inner region of the light-shielding wall 111.

The light-shielding wall 111 and the light absorption layer 112 may be formed in sequence, or may be formed in the same process. When the light-shielding wall 111 and the light absorption layer 112 are formed in the same process, the light-shielding wall 111 has a hollow structure, similar to the structure inside the second through hole 108b and the third through hole 108c. When patterning the light absorption layer 112, the patterning may be performed before the wiring 142 is formed, the patterning may be performed in the same process as the patterning of the wiring 142, or the patterning may be performed after the wiring 142 is formed. ..

As described above, after the light absorption layer 112 using the black resin or metal layer is formed, the through electrode 110 that conducts the first surface 102a and the second surface 102b of the interposer substrate 102 through the through hole 108 is provided. Form. As a method for forming the through silicon via 110, the method described in the first embodiment may be used.

The image sensor module 200 according to the present embodiment has been described above. According to the present embodiment, since the leg portion 124a provided in the lens unit 106 of the image sensor module 100 according to the first embodiment is not required, the image sensor module 200 having a lower profile can be provided.

<Third Embodiment>
The configuration of the image sensor module according to the present embodiment will be described in detail with reference to FIG. FIG. 17 is a cross-sectional view illustrating the interposer substrate 102 of the image sensor module according to the present embodiment. The configuration of the interposer board 102 of the image sensor module according to the present embodiment is different from that of the image sensor module 200 according to the second embodiment.

In the image sensor module according to the present embodiment, the through electrodes 110 arranged in the second through hole 108b and the ends of the columns 118 arranged in the third through hole 108c on the first surface 102a side have the first surface 102a. It is located closer to the image sensor 104. In other words, the ends of the through electrodes 110 and the columns 118 on the first surface 102a side project downward from the interposer substrate 102.

The broken line P shown in FIG. 17 indicates a plane parallel to the second surface 102b of the interposer substrate 102. The ends of the through silicon via 110 and the support column 118 on the first surface 102a side are located on the broken line P. That is, the ends of the through electrodes 110 and the columns 118 on the first surface 102a side are located on a plane parallel to the second surface 102b of the interposer substrate 102. The end of the support column 118 on the first surface 102a side does not have to be located on the broken line P.

In the flip-chip connection between the interposer substrate 102 and the image sensor 104, both are connected only by a plurality of protruding through electrodes 110. That is, the first surface 102a of the interposer board 102 and the image sensor 104 do not come into contact with each other.

When the interposer substrate 102 and the image sensor 104 are in surface contact with each other, it may be difficult to align them due to the influence of air bubbles generated between the two and friction between the two when the two are connected. However, in the present embodiment, by having the above-described configuration, the image sensor 104 and the interposer substrate 102 are arranged in parallel with high accuracy, and the alignment of the two in the manufacturing process becomes easy.

An example of a method of forming the interposer substrate 102 of the image sensor module according to the present embodiment will be described. The light absorption layer 112 and the through electrode 110 are formed on the side wall of the through hole 108 by using the method described above. By protecting the end of the through electrode 110 on the first surface 102a side and etching from the first surface 102a side, only the interposer substrate 102 is thinned. Therefore, the position of the end portion of the through electrode 110 on the first surface 102a side is maintained at the same position as the first surface 102a of the interposer substrate 102 before being thinned.

By the above steps, the interposer substrate 102 shown in FIG. 17 can be formed. As a result, the positions of the ends of the through electrodes 110 on the first surface 102a side can be made coplanar. According to this method, the solder ball 116 used for the flip chip connection is not required.

<Fourth Embodiment>
The configuration of the image sensor module according to the present embodiment will be described in detail with reference to FIG. FIG. 18 is a cross-sectional view illustrating the interposer substrate 102 of the image sensor module according to the present embodiment. The configuration of the interposer board 102 of the image sensor module according to the present embodiment is different from that of the image sensor module 200 according to the second embodiment.

The interposer substrate 102 shown in FIG. 18 is similar to the interposer substrate 102 shown in FIG. 17, but a part of the interposer substrate 102 is a part of the first surface 102a in the region where the through electrode 110 on the first surface 102a side is provided. It differs from the interposer substrate 102 shown in FIG. 17 in that it has a convex portion protruding in the lateral direction.

The broken line P shown in FIG. 18 indicates a plane parallel to the second surface 102b of the interposer substrate 102. The ends of the through silicon via 110 and the support column 118 on the first surface 102a side are located on the broken line P. That is, the ends of the through electrodes 110 and the columns 118 on the first surface 102a side are located on a plane parallel to the second surface 102b of the interposer substrate 102. The end of the support column 118 on the first surface 102a side does not have to be located on the broken line P.

In the flip-chip connection between the interposer substrate 102 and the image sensor 104, both are connected via a convex portion including a plurality of protruding through electrodes 110. That is, the first surface 102a of the interposer substrate 102 and the light receiving surface 104a do not come into contact with each other. In other words, a gap is formed between the first surface 102a of the interposer substrate 102 and the light receiving surface 104a.

By having such a configuration, the image sensor 104 and the interposer substrate 102 are arranged in parallel with high accuracy, and the alignment of the two in the manufacturing process becomes easy. Further, since the through electrode 110 is supported from the side by the interposer substrate 102, the mechanical strength of the through electrode 110 is improved.

An example of a method of forming the interposer substrate 102 of the image sensor module according to the present embodiment will be described. The light absorption layer 112 and the through electrode 110 are formed on the side wall of the through hole 108 by using the method described above. Here, the through electrode 110 is filled so that its end is at the same position as the first surface 102a, and the end of the through electrode 110 on the first surface 102a side and the first surface 102a are as flat as possible. It is desirable to form as such. A resist mask was formed to protect the end of the through electrode 110 on the first surface 102a side and the first surface 102a around the through electrode 110, and was exposed from the resist mask by etching from the first surface 102a side. The interposer substrate 102 is thinned.

By the above steps, the interposer substrate 102 shown in FIG. 18 can be formed. According to this method, which can make the end of the through electrode 110 on the first surface 102a side and a part of the interposer substrate 102 on the same plane, the solder ball 116 used for the flip chip connection is required. Do not. Further, since the through electrode 110 is supported from the side by the interposer substrate 102, the mechanical strength of the interposer substrate 102 on which the through electrode 110 is formed is improved.

19 and 20 are diagrams showing examples of application products on which the image sensor module according to the embodiment of the present disclosure can be mounted. The image sensor module manufactured as described above is mounted on various application products. For example, it is installed in a notebook personal computer 1000, a tablet terminal 2000, a mobile phone 3000, a smartphone 4000, a digital video camera 5000, a digital camera 6000, and the like. It can also be applied to a smartphone 4100 or the like having a dual camera equipped with two image sensor modules 300a and 300b according to the embodiment of the present disclosure. In this example, a dual camera is provided on the back surface of the smartphone 4100. A conventional camera mounted on a smartphone composed of only one image sensor has a problem that the depth of field becomes very deep due to the limitation of the size of the image sensor. Therefore, by mounting a dual camera with two image sensors on a smartphone, it is possible to record images under two different conditions, combine them after shooting, and adjust the depth of field equivalent to, for example, a single-lens reflex camera. .. Further, the image sensor modules 300a and 300b are not limited to two, and three or more may be mounted. Here, the plurality of image sensor modules are not limited to the mode in which they are arranged in a row in the horizontal direction as in the illustrated smartphone 4100, and may be arranged in the vertical direction or may be arranged irregularly. Further, the distance between the plurality of image sensor modules is not limited, and they may be arranged near both sides of the smartphone or may be arranged diagonally. Further, the image sensor module 300 according to the embodiment of the present disclosure may be mounted on a wristwatch. The wristwatch 7000 shows an aspect in which the image sensor module 300 is mounted in the vicinity of the crown 7010. The wristwatch 7100 shows a mode in which the image sensor module 300 is mounted in the vicinity of the band (12 o'clock direction). The wristwatch 7200 shows an aspect in which the image sensor module 300 is mounted on the display panel. Then, like the wristwatch 7300, the image sensor module 300 may be mounted on the side surface opposite to the arrangement of the wristwatch 7000, that is, the side surface opposite to the side surface on which the crown 7010 is arranged.

The present disclosure is not limited to the above embodiment, and can be appropriately modified without departing from the spirit.

100: Image sensor module, 102: Interposer substrate, 102a: First surface, 102b: Second surface, 104: Image sensor, 104a: Light receiving surface, 106: Lens unit, 108: Through hole, 108a: First through hole, 108b: 2nd through hole, 108c: 3rd through hole, 110: through electrode, 111: light-shielding wall, 111a: 1st light-shielding wall, 111b: 2nd light-shielding wall, 111c: gap, 112: light absorption layer, 116: Solder ball, 118: Support, 120: Interposer substrate, 120: Imaging lens group, 122: 2nd case, 124: 3rd case, 124a: Leg, 124b: 3rd case lower part, 124c: Space, 125: Light-shielding property Adhesive, 126: Transparent resin substrate, 130: Coil, 132: Spring, 134: Heat dissipation member, 136: First case, 137: Recess, 138: Cover, 140: Permanent magnet, 142: Wiring, 144: FPC, 145 : Connection terminal, 146: Filler, 148: Photonode, 150: Wiring layer, 152: Color filter, 154: Microlens, 156: Flattening layer, 180: Through hole, 200: Image sensor module, 300: Image sensor Module, 1000: Notebook personal computer, 2000: Tablet terminal, 3000: Mobile phone, 4000, 4100: Smartphone, 5000: Digital video camera, 6000: Digital camera, 7000, 7100, 7200, 7300: Watch, 7010: Crown

Claims (11)

An interposer substrate having a first surface, a second surface opposite to the first surface, and a plurality of through holes penetrating the first surface and the second surface and containing a component that absorbs infrared rays.
An image sensor located at a position facing the first surface of the interposer substrate, having a light receiving surface including a plurality of photoelectric conversion elements on the interposer substrate side, and externally via electrodes in the plurality of through holes. The image sensor connected to the circuit and
A lens unit which faces the second surface side of the interposer substrate,
A light absorbing layer provided between the inner wall of the through hole and the electrode is provided .
Wherein the plurality of through-holes, an image sensor module that is arranged to surround the light receiving surface. The image sensor module according to claim 1, wherein the interposer substrate includes P2O5, Al2O3, SiO2, B2O3, and CuO. The first aspect of the interposer substrate, wherein the interposer substrate is arranged so as to penetrate from the first surface to the second surface of the interposer substrate, is arranged around the light receiving surface, and includes a first light-shielding wall provided with a gap. Image sensor module. The image sensor module according to claim 3, wherein the interposer substrate includes a second light-shielding wall provided corresponding to the gap. The image sensor module according to claim 4, wherein the first light-shielding wall and the second light-shielding wall are made of metal. The image sensor module according to claim 4, wherein the first light-shielding wall and the second light-shielding wall are black resin. The image sensor module according to claim 1, wherein the light absorption layer is provided on a region other than the light receiving surface on the second surface. The image sensor module according to claim 7, wherein the light absorption layer is made of metal. The image sensor module according to claim 7, wherein the light absorption layer is a black resin. The image sensor module according to claim 1, wherein the lens unit has a frame-shaped leg that surrounds the light receiving surface and comes into contact with the interposer substrate. The image sensor module according to claim 10, wherein the legs are in contact with the interposer substrate via a light-shielding adhesive.

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