JP6820329B2 - ガラス材料を含むキャリアおよびオプトエレクトロニクス半導体部品を備える組み立て品 - Google Patents
ガラス材料を含むキャリアおよびオプトエレクトロニクス半導体部品を備える組み立て品 Download PDFInfo
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- JP6820329B2 JP6820329B2 JP2018521912A JP2018521912A JP6820329B2 JP 6820329 B2 JP6820329 B2 JP 6820329B2 JP 2018521912 A JP2018521912 A JP 2018521912A JP 2018521912 A JP2018521912 A JP 2018521912A JP 6820329 B2 JP6820329 B2 JP 6820329B2
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- 239000004065 semiconductor Substances 0.000 title claims description 205
- 239000000463 material Substances 0.000 title claims description 114
- 239000011521 glass Substances 0.000 title claims description 109
- 230000005693 optoelectronics Effects 0.000 title claims description 23
- 239000000969 carrier Substances 0.000 title description 23
- 230000000712 assembly Effects 0.000 title 1
- 238000000429 assembly Methods 0.000 title 1
- 238000000034 method Methods 0.000 description 64
- 239000004020 conductor Substances 0.000 description 50
- 238000004519 manufacturing process Methods 0.000 description 24
- 239000000758 substrate Substances 0.000 description 23
- 230000005670 electromagnetic radiation Effects 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 17
- 229910000679 solder Inorganic materials 0.000 description 12
- 238000002844 melting Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000007774 longterm Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000005385 borate glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000010309 melting process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000005365 phosphate glass Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- -1 B 2 O 3 Chemical class 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000009940 knitting Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000005028 tinplate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Description
2 表面
3 半導体部品
4 凹部
5 表側
6 第1の側面
7 第2の側面
8 第3の側面
9 放出方向
10 第1の導体トラック
11 第2の導体トラック
12 上側
13 ミラー層
14 活性領域
15 第1のコンタクト・パッド
16 第2のコンタクト・パッド
17 ガラス材料
18 変換材料
19 底面
20 トレンチ
21 第1の側面
22 第2の側面
23 第1のSMDコンタクト
24 第2のSMDコンタクト
25 第1のコンタクト・ピン
26 第2のコンタクト・ピン
27 表側
28 光学構造
29 基板
Claims (4)
- ガラス材料を含むキャリア(1)であって、少なくとも1つの凹部(4)を備え、少なくとも1つのオプトエレクトロニクス半導体部品(3)が前記キャリアの前記少なくとも1つの凹部(4)内に配置され、前記半導体部品(3)の少なくとも1つの表面がガラスを含む溶融面を介して前記キャリア(1)に結合されている、キャリア(1)を具備し、
前記凹部(4)は、前記キャリア(1)を通って延びる穴の形態に形成され、
前記半導体部品(3)の表側(5)は、前記凹部(4)の開口面に割り当てられている、組み立て品。 - 前記半導体部品(3)の少なくとも1つの側面(6、7、8)が、ガラスを含む溶融面を介して前記キャリア(1)に結合されている、
請求項1に記載の組み立て品。 - 前記溶融面は、前記キャリア(1)の前記ガラス材料から形成されている、
請求項1または2に記載の組み立て品。 - 前記溶融面は、ガラス材料(17)から形成され、
前記ガラス材料(17)は、前記キャリア(1)と前記半導体部品(3)との間に配置されている、
請求項1または2に記載の組み立て品。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015119343.4 | 2015-11-10 | ||
DE102015119343.4A DE102015119343B4 (de) | 2015-11-10 | 2015-11-10 | Anordnung mit einem Träger aus einem Glasmaterial und einem optoelektronischen Halbleiterbauteil und Verfahren zum Herstellen einer solchen Anordnung |
PCT/EP2016/077316 WO2017081184A1 (de) | 2015-11-10 | 2016-11-10 | Anordnung mit einem träger aus einem glasmaterial und einem optoelektronischen halbleiterbauteil |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018533223A JP2018533223A (ja) | 2018-11-08 |
JP6820329B2 true JP6820329B2 (ja) | 2021-01-27 |
Family
ID=57391947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018521912A Active JP6820329B2 (ja) | 2015-11-10 | 2016-11-10 | ガラス材料を含むキャリアおよびオプトエレクトロニクス半導体部品を備える組み立て品 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10651346B2 (ja) |
JP (1) | JP6820329B2 (ja) |
KR (1) | KR102580122B1 (ja) |
DE (1) | DE102015119343B4 (ja) |
WO (1) | WO2017081184A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102498252B1 (ko) * | 2017-09-26 | 2023-02-10 | 삼성전자주식회사 | 발광 칩들을 포함하는 디스플레이 및 그 제조 방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19803936A1 (de) | 1998-01-30 | 1999-08-05 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung |
US7488432B2 (en) * | 2003-10-28 | 2009-02-10 | Nichia Corporation | Fluorescent material and light-emitting device |
ATE541320T1 (de) * | 2004-11-18 | 2012-01-15 | Koninkl Philips Electronics Nv | Beleuchter und verfahren zur herstellung eines derartigen beleuchters |
JP2006286908A (ja) * | 2005-03-31 | 2006-10-19 | Sony Corp | 発光ダイオードモジュール、カラー液晶表示装置 |
WO2006117710A1 (en) | 2005-04-29 | 2006-11-09 | Koninklijke Philips Electronics N.V. | Light source with glass housing |
JP2007080884A (ja) * | 2005-09-09 | 2007-03-29 | Asahi Glass Co Ltd | 発光装置の製造方法、発光装置および発光装置の中間部品 |
JP2008034473A (ja) | 2006-07-26 | 2008-02-14 | Toyoda Gosei Co Ltd | 面状光源 |
JP5307364B2 (ja) * | 2006-08-03 | 2013-10-02 | 豊田合成株式会社 | 蛍光体含有ガラスの製造方法及び固体素子デバイスの製造方法 |
JP2008270563A (ja) | 2007-04-20 | 2008-11-06 | Toyoda Gosei Co Ltd | 発光装置、光源装置及び発光装置の製造方法 |
DE102007046496B4 (de) * | 2007-09-28 | 2017-01-05 | Osram Oled Gmbh | Verfahren zur Herstellung einer mit zumindest einer Kavität versehenen Schutzverkapselung für zumindest ein elektronisches Bauteil |
JP2010100743A (ja) | 2008-10-24 | 2010-05-06 | Mitsubishi Chemicals Corp | 蛍光体含有組成物の製造方法 |
DE102010007751B4 (de) | 2010-02-12 | 2020-08-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Linse, optoelektronisches Halbleiterbauelement und Beleuchtungseinrichtung |
DE102010045390A1 (de) | 2010-09-15 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronisches Halbleiterbauteils |
US9666763B2 (en) * | 2012-11-30 | 2017-05-30 | Corning Incorporated | Glass sealing with transparent materials having transient absorption properties |
DE102013107862A1 (de) * | 2013-07-23 | 2015-01-29 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines oberflächenmontierbaren optoelektronischen Halbleiterbauteils |
DE102014100584A1 (de) | 2014-01-20 | 2015-07-23 | Osram Gmbh | Verfahren zum Herstellen von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
-
2015
- 2015-11-10 DE DE102015119343.4A patent/DE102015119343B4/de active Active
-
2016
- 2016-11-10 US US15/775,038 patent/US10651346B2/en active Active
- 2016-11-10 KR KR1020187015775A patent/KR102580122B1/ko active IP Right Grant
- 2016-11-10 WO PCT/EP2016/077316 patent/WO2017081184A1/de active Application Filing
- 2016-11-10 JP JP2018521912A patent/JP6820329B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2017081184A1 (de) | 2017-05-18 |
JP2018533223A (ja) | 2018-11-08 |
KR20180081757A (ko) | 2018-07-17 |
US20180374996A1 (en) | 2018-12-27 |
KR102580122B1 (ko) | 2023-09-20 |
DE102015119343B4 (de) | 2024-05-29 |
US10651346B2 (en) | 2020-05-12 |
DE102015119343A1 (de) | 2017-05-11 |
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