JP6810680B2 - 圧力センサ - Google Patents
圧力センサ Download PDFInfo
- Publication number
- JP6810680B2 JP6810680B2 JP2017243864A JP2017243864A JP6810680B2 JP 6810680 B2 JP6810680 B2 JP 6810680B2 JP 2017243864 A JP2017243864 A JP 2017243864A JP 2017243864 A JP2017243864 A JP 2017243864A JP 6810680 B2 JP6810680 B2 JP 6810680B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- sensor chip
- semiconductor
- semiconductor pressure
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 134
- 239000012790 adhesive layer Substances 0.000 claims description 57
- 239000000853 adhesive Substances 0.000 claims description 51
- 230000001070 adhesive effect Effects 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 25
- 239000010410 layer Substances 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 12
- 239000011810 insulating material Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 description 21
- 239000012530 fluid Substances 0.000 description 20
- 230000000694 effects Effects 0.000 description 19
- 238000001514 detection method Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 238000007789 sealing Methods 0.000 description 13
- 239000007788 liquid Substances 0.000 description 12
- 230000008646 thermal stress Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- 230000008054 signal transmission Effects 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 229920001707 polybutylene terephthalate Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- -1 polybutylene terephthalate Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
110 流体導入部
111 継手部材
111a 雌ねじ部
111b ポート
112 ベースプレート
112A 圧力室
120 圧力検出部
121 ハウジング
122 ダイヤフラム
123 ダイヤフラム保護カバー
123a 連通孔
124、524 ハーメチックガラス
124A 液封室
125、425 支柱
125A、425A、525A、625A、725A、825A、925A 接着剤層
126、526、726 半導体圧力センサチップ
126a、526a、726a 半導体基板部
126a1、526a1、726a1 ダイヤフラム部
126b、526b、726b 台座部
126A、526A、726A ボンディングワイヤ
127 電位調整部材
128、528、728 リードピン
129 オイル充填用パイプ
130 信号送出部
131 端子台
132 接続端子
132a 接着剤
133 電線
133a 芯線
134 静電気保護層
134a 接着層
134b 被覆層
134c 部分
140 カバー部材
141 防水ケース
142 端子台キャップ
143 封止剤
425a、625a、825a 突起部
525、625、725、825 ベース
925 取付基板
925a 導電層
Claims (8)
- 内部にダイヤフラム部を有する半導体圧力センサチップと、
前記半導体圧力センサチップを支持する支持部材と、
前記半導体圧力センサチップと前記支持部材を接着して固定する接着剤層と
を備える圧力センサにおいて、
前記接着剤層の接着領域は、前記半導体圧力センサチップの前記ダイヤフラム部の前記支持部材に対する投影面積よりも小さく、
前記接着剤層の接着領域の位置は、変形部分に対応する場所となる、前記半導体圧力センサチップの前記ダイヤフラム部の前記支持部材に対する投影箇所の内側であることを特徴とする圧力センサ。 - 前記支持部材には、前記接着剤層の接着領域に合わせた領域の平坦面を有する突起部が設けられることを特徴とする請求項1に記載の圧力センサ。
- 前記支持部材は、外部に対して絶縁して固定される金属性の支柱であることを特徴とする請求項1に記載の圧力センサ。
- 前記支持部材は、前記圧力センサの筐体を構成するベースであることを特徴とする請求項1に記載の圧力センサ。
- 前記支持部材には、さらに、前記ベースと前記半導体圧力センサチップとの間に配置され、取付基板が含まれることを特徴とする請求項4に記載の圧力センサ。
- 前記取付基板の前記半導体圧力センサチップが固定される一方の面に、導電層が形成されることを特徴とする請求項5に記載の圧力センサ。
- 前記ベースは、導電性の材質で形成されることを特徴とする請求項4から6のいずれか1項に記載の圧力センサ。
- 前記ベースは、絶縁性の材質で形成されることを特徴とする請求項4から6のいずれか1項に記載の圧力センサ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017243864A JP6810680B2 (ja) | 2017-12-20 | 2017-12-20 | 圧力センサ |
PCT/JP2018/040560 WO2019123853A1 (ja) | 2017-12-20 | 2018-10-31 | 圧力センサ |
CN201880079583.8A CN111465831A (zh) | 2017-12-20 | 2018-10-31 | 压力传感器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017243864A JP6810680B2 (ja) | 2017-12-20 | 2017-12-20 | 圧力センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019109196A JP2019109196A (ja) | 2019-07-04 |
JP6810680B2 true JP6810680B2 (ja) | 2021-01-06 |
Family
ID=66994598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017243864A Active JP6810680B2 (ja) | 2017-12-20 | 2017-12-20 | 圧力センサ |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6810680B2 (ja) |
CN (1) | CN111465831A (ja) |
WO (1) | WO2019123853A1 (ja) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5826237A (ja) * | 1981-08-07 | 1983-02-16 | Mitsubishi Electric Corp | 圧力センサ |
US4800758A (en) * | 1986-06-23 | 1989-01-31 | Rosemount Inc. | Pressure transducer with stress isolation for hard mounting |
US5945605A (en) * | 1997-11-19 | 1999-08-31 | Sensym, Inc. | Sensor assembly with sensor boss mounted on substrate |
JP2001208627A (ja) * | 2000-01-24 | 2001-08-03 | Saginomiya Seisakusho Inc | 半導体圧力検出装置 |
JP3987386B2 (ja) * | 2001-11-20 | 2007-10-10 | 株式会社鷺宮製作所 | 圧力センサ |
WO2010134181A1 (ja) * | 2009-05-21 | 2010-11-25 | パナソニック電工株式会社 | チップの実装構造、及びそれを備えたモジュール |
KR101483279B1 (ko) * | 2012-06-11 | 2015-01-14 | 가부시키가이샤 사기노미야세이사쿠쇼 | 압력 센서 및 압력 센서의 제조 방법 |
JP6665589B2 (ja) * | 2016-03-02 | 2020-03-13 | オムロン株式会社 | 圧力センサチップ及び圧力センサ |
-
2017
- 2017-12-20 JP JP2017243864A patent/JP6810680B2/ja active Active
-
2018
- 2018-10-31 WO PCT/JP2018/040560 patent/WO2019123853A1/ja active Application Filing
- 2018-10-31 CN CN201880079583.8A patent/CN111465831A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2019123853A1 (ja) | 2019-06-27 |
CN111465831A (zh) | 2020-07-28 |
JP2019109196A (ja) | 2019-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3987386B2 (ja) | 圧力センサ | |
JP4548066B2 (ja) | 圧力センサ | |
KR102249785B1 (ko) | 압력센서 | |
JP6892404B2 (ja) | 圧力センサ | |
JP2017134014A (ja) | 圧力センサ | |
WO2019107140A1 (ja) | 圧力センサのシールド構造、および、それを備える圧力センサ | |
WO2018168608A1 (ja) | 圧力センサ | |
JP6810680B2 (ja) | 圧力センサ | |
WO2018055954A1 (ja) | 圧力センサ | |
WO2018055952A1 (ja) | 圧力センサ | |
JP6621854B2 (ja) | 圧力センサ | |
JP6795538B2 (ja) | 圧力センサ | |
CN110573852B (zh) | 压力传感器以及压力传感器的制造方法 | |
WO2018055953A1 (ja) | 圧力センサ | |
JP6781259B2 (ja) | 圧力センサ | |
WO2019107086A1 (ja) | 圧力センサのシールド構造、および、それを備える圧力センサ | |
JP4118729B2 (ja) | 圧力センサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190904 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200602 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200713 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201201 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201211 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6810680 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |