JP6801061B2 - Methods and equipment for temporarily fixing the board - Google Patents

Description

The present invention relates to a method及BiSo location that is described in the independent claim.

U.S. Pat. No. 6,563,133 (US66563133B1) and U.S. Pat. No. 7,332,410 (US733,210B2) disclose bonding of oxide-free substrate pairs at room temperature without consuming external force. Has been done. At that time, the surface of the substrate is treated with a semi-amorphous layer composed of boron ions or arsenic ions, so that the surface of the substrate is modified by plasma treatment or ion implantation treatment. After full-scale contact under standard pressure, the substrate pair remains in a low vacuum atmosphere. A binding energy of about 400 mJ / m ² is achieved at room temperature. Further annealing steps are subsequently performed at temperatures up to 400 ° C. to form a permanent bond. Substrates are limited to semiconductors such as Si, InGaAs, GaAs, Ge and SiC.

European Patent Application Publication No. 2672509 (EP2672509A1) discloses a cluster system comprising a pretreatment unit and a junction unit. Here, a bonding surface that enables bonding with a sufficient bonding force without using a high vacuum is being created.

U.S. Patent Application Publication No. 2006/0132544 (US2006 / 0132544A1) discloses fixation (English "tacking") or provisional fixation of a bonding sheet having an adhesive layer. The laser heats a partial region of the adhesive layer, which also achieves fixation.

U.S. Pat. No. 5,686,226 (US568,226) uses locally adhered resin adhesives to attach (product) substrates to each other by curing (polymerizing) the adhesive by UV radiation. ..

Transferring a substrate or substrate laminate poses many problems in the prior art, especially since the substrate should not be damaged on the one hand and the alignment of the substrate, which may occur in some cases, should not be changed on the other hand. Is causing. In addition, the transport should take place in as small a space as possible.

Therefore, an object of the present invention is to provide a method and an apparatus in which the transfer of the aligned substrate is particularly improved. Furthermore, the joining quality should be improved and the number of defective products generated should be reduced. Moreover, flexibility should be improved and cycle time should be shortened.

This problem is solved by the configuration described in the feature portion of claims 1 and 10. An advantageous development of the present invention is described in the dependent claims. Within the framework of the present invention are all combinations consisting of at least two of the features described in the specification, claims and / or drawings. Within the range of values described herein, the values within the boundaries listed therein should also be considered to be disclosed as limits and shall be deemed to be claimable for any combination. Is done.

The basic idea of the present invention is to align a substrate, particularly amorphized, in which at least one substrate surface of the substrate has been pretreated in at least one surface region to another substrate, followed by pre-treatment. This means that the treated surface areas are brought into contact with each other and temporarily fixed. Alignment and contact and temporary fixing are performed, among other things, in the same module chamber (temporary fixing module) that is in constant vacuum during alignment and contact.

According to one advantageous embodiment of the present invention, the substrates are joined in succession, in particular the vacuum in the module chamber is joined without interruption. In a suitable high vacuum environment (particularly <10e ^-7 mbar, preferably <10e ^-8 mbar), the polished and / or pretreated substrate surface is spontaneously and covalently subjected to additional pressure. They are joined, especially at room temperature, by pure contact without (or at least very little pressure). See publication PCT / EP2014 / 063303 for preprocessing.

The methods according to the invention, the devices derived from this method, and the products manufactured by them, are pretreated, especially to temporarily fix the substrate pair in the alignment unit (alignment device, especially the alignment device outside the junction chamber). In doing so, the high contact force and / or high temperature required for permanent bonding over the entire surface is not used. In particular, the substrates are tentatively fixed or temporarily joined exclusively at a few points or partial surfaces (surface regions).

Over time, a greater force is applied with a uniform surface load in the subsequent joining step (in the joining chamber of the joining module). This process can be supported by additional heat supply.

Pretreatment is performed, in particular, from temporary fixing modules and / or joining modules, especially in pretreatment modules that can be isolated by locks. In this pretreatment module, an amorphized substrate surface of a substrate (semiconductor material, oxide or polished metal such as Al, Cu, glass, ceramics) is formed. When the substrate is activated and the two substrates are brought into contact with each other, a high rate of contact of the minute contact surfaces is realized. This allows spontaneous covalent bonds to occur at low temperatures, especially at room temperature. Preferably, the contact connection is made in high vacuum.

Temporary fixation is performed particularly by local energy supply, and in particular by energy supply from a surface opposite to the surface of the substrate on which contact should be made.

In order to achieve an equal amount of pressure for spontaneous bonding on a partial surface, and in order to temporarily fix (fix or "tack") the substrate, especially the wafer, energy, in particular force and / or Heat is applied locally. The substrate is locally acted upon, in particular using one or more pressing rams, thereby locally tentatively immobilizing the substrate. The position adjustment unit, especially the 3-axis position adjustment unit, is designed specifically for the resultant force of the partially applied forces, which makes the position adjustment unit cheaper and therefore more economical. ..

In the surface area where the action is exerted, bonding (temporary fixing) occurs, especially by covalent bonding (temporary fixing), and the strength of this bonding is sufficient to transport the temporarily fixed substrate pair to the bonding chamber. It is a thing. In the joining chamber, pressure is applied over the entire surface while optionally raising the temperature for permanent joining.

The joint strength of the temporary fixing is particularly strong enough to maintain the mutual alignment of the substrates during transportation.

Regarding handling, especially regarding transportation from the alignment module or temporary fixing module to the joining module or another processing module, one or both holding surfaces of the two holding surfaces (the surface opposite to the substrate surface) of the substrate laminate. The accommodating device (board holder or chuck) in the above can be omitted.

In the developed form of the present invention, at least one of the substrate surfaces, particularly all substrate surfaces, has an average roughness value Ra of less than 20 nm, preferably an average roughness value of less than 1 nm. For all polished surfaces with an average roughness value of less than 20 nm (eg, especially aluminum, copper, oxides, semiconductor materials and glass), a force is applied locally in the position adjuster. As a result, temporary fixing is realized.

One embodiment of the method according to the invention specifically comprises the following steps:
1) A step of bringing a board or a pair of boards into a high vacuum environment, especially via a lock, and transporting at least one of the boards to the pretreatment chamber of the pretreatment module (especially using a robotic arm).
2) A step of pretreating at least one of the substrates so that the substrate is suitable for spontaneous room temperature bonding,
3) (especially using a robot arm), a step of transporting to a position adjuster / alignment device / temporary fixing module (first module chamber),
4) In the alignment device, the step of aligning two substrates with each other,
5) The step of bringing the two substrates into contact and applying energy locally, especially one or more local surface loads; this results in temporary fixation and as a result the alignment between the substrates is established. To. Alternatively, temporary fixing can be performed over the entire surface,
6) (especially using a robot arm), the step of transporting the temporarily fixed substrate laminate to the joining module (second module chamber).
7) A step of applying bonding force over some surfaces or (preferably) over the entire surface and optionally raising the temperature to further strengthen the bond.
8) A step of removing the joined substrate from a high vacuum environment.

According to one embodiment of the invention, the method can be repeated many times after step 5) to add another substrate to the substrate laminate before the bonding is performed.

The method according to the invention is advantageously applied in a high vacuum environment, preferably an ultra high vacuum environment, which can be closed via a lock. In the high vacuum environment, a module that can apply additional pressure is arranged.

According to one aspect of the invention, a large force is applied during joining, the temperature is raised to a higher temperature if necessary, and (precise) alignment is separated. This provides structural benefits and, as a result, cost savings. Even if the force along the Z axis exceeds 1 kN, a precise mechanism for adjusting the position in the sub μm range along the X and Y axes is already feasible, if not feasible, especially in high vacuum. , Extremely complicated. That is, for example, in a high vacuum, a lubricant cannot be used and an air bearing cannot be used. In rolling bearings and plain bearings, particles are generated or high backlash is also caused by frictional force. In addition, the introduction of large forces along the Z axis increases the risk of adversely affecting alignment in the X and Y directions, and thus alignment accuracy.

A further advantage is optimal productivity. That is, for example, in equipment, the number of temporary fixing devices and joining modules can be selected so as to guarantee the optimum throughput for each process. In particular, when heat supply is required, and when heating time and cooling time are required associated therewith, it is preferable to utilize a plurality of bonding modules by one temporary fixing unit.

A further advantage of the present invention is modularity, and therefore additional temporary fixing units can be introduced. By using a locally temporarily joined substrate that is temporarily fixed / tacked by the temporary fixing portion in the position adjusting unit, the performance of the high vacuum equipment can be improved by adding the temporary fixing unit according to the present invention. Can be done.

The average roughness value to the arithmetic average roughness value Ra represents the technical surface roughness. In order to obtain this measured value, the surface is scanned in a predetermined measurement section, and all the differences in height and depth of the rough surface are recorded. After a particular integral of this roughness course in the measurement interval has been calculated, the result is subsequently divided by the length of the measurement interval. Roughness values range from 25 μm for very rough surfaces with perceived grooves to <20 nm for polished surfaces.

An advantageous material combination for a substrate is a combination of all materials having a polished or polishable surface, especially having an average roughness value Ra of less than 20 nm. The following materials or combinations of materials are suitable:
-Semiconductor materials, especially Si, InP, GaAs, semiconductor alloys, III-V compounds and II-IV compounds,
-Metal, especially Cu, Al,
-Oxide, especially SiO ₂ , or another oxide of a semiconductor wafer or semiconductor material that has an oxidized surface,
-Nitride, especially SiNx,
-Glass,
-Glass ceramics, especially Zerodur®,
-Ceramics.

The present invention is particularly limited to polished surfaces that allow pretreatment for covalent bonds. The polished surface is preferably an average roughness value Ra of less than 20 nm, measured in an area of 2 × 2 μm ² using an atomic force microscope (AFM). Is a surface having an average roughness value Ra of less than 1 nm. The locally injected energy or locally applied force is particularly large enough to even out the micro-roughness so that the surface molecules form a high percentage of the binding energy acting between the substrates. can do. The shorter the average distance between the surfaces of the two substrates on the atomic surface, the stronger the adhesion. Therefore, this adhesion depends on the roughness of the surface on which the substrates should be contacted.

The substrate surface can be pretreated by the plasma treatment, and at this time, the minute roughness (topological structure) of the substrate surface changes. When the optimum surface roughness is reached, the maximum junction energy can be achieved.

Partial aspects of one embodiment or evolution of the invention, especially with respect to pretreatment, are disclosed in PCT / EP2014 / 063303, and thus the disclosure thereof is referenced. PCT / EP2014 / 063303 discloses a method and an apparatus for surface-treating a substrate. The basic idea of PCT / EP2014 / 063303 is to form a mostly amorphous layer on the surface of the substrate to be joined. Amorphization of the substrate surface provides better bonding results, especially at relatively low temperatures. Preferably, surface cleaning and amorphization for removing oxides are performed at the same time. PCT / EP2014 / 063303 is a method for permanently joining two substrates, in particular, at least one of the two substrates, in particular both of which have been treated prior to bonding as described below. Regarding. The surface area of the two substrates or at least one of the two substrates, especially the contact side (particularly the entire contact side), is amorphized prior to the joining process. Amorphization forms a layer with a thickness of nanometers, in which atoms on at least one of the surfaces to be joined (contact side) are irregularly arranged. This irregular arrangement gives better bonding results, especially at relatively low temperatures. In order to carry out the bonding according to the present invention, particularly surface cleaning (at least cleaning of the contact side) is carried out, especially to remove oxides. In particular, cleaning and amorphization are carried out at the same time, and more preferably by the same treatment. An essential aspect of the invention according to the invention is the use of particularly low energy particles, especially ions, which are relatively low in energy but most likely to cause the amorphization described according to the invention. Is enough.

Removal of oxides from the substrate surface is advantageous for substrate laminates that have an optimal bonding process and correspondingly high bonding strength. This is especially true for all materials that form unwanted natural oxides in an oxygen-containing atmosphere. This is not always the case for intentionally formed oxygen substrate surfaces, such as silicon oxide. In particular, according to the present invention, harmful, unnecessary and / or natural oxides, especially metal oxides, are removed, especially at least in large part, and more preferably only such oxides are removed. .. In particular, the oxides mentioned above are sufficiently removed prior to the joining process, especially completely removed, thereby not being incorporated into the joining interface (the contact surface of the two substrates). Incorporation of this type of oxide can result in mechanical instability and very low bonding strength. Oxide removal is carried out by physical or chemical methods. In one particularly preferred embodiment according to the invention, the removal of unwanted oxides is carried out by the same pretreatment apparatus as the one performing the pretreatment. This allows under particularly optimal circumstances:
・ Oxide removal ・ Surface smoothing ・ Amorphization can be performed at the same time. In an alternative embodiment according to the invention, oxide removal is not performed in the same facility. In that case, it must be specifically guaranteed that no new oxidation of the substrate surface will occur when the substrate is transported between the two facilities.

In the semiconductor industry, various bonding techniques have been used for several years to bond substrates to each other. The binding process is called bonding. A distinction is made between the temporary joining method and the permanent joining method.

In the temporary joining method, the product substrate and the support substrate are joined so that they can be peeled off again after the treatment. By using the temporary joining method, the product substrate can be mechanically stabilized. Mechanical stabilization ensures that the product substrate can be handled without bending, deformation or breakage. Stabilization with a support substrate is required especially during and after the process of thinning the back surface. The process of thinning the back surface can reduce the thickness of the product substrate to a few micrometers.

In the permanent bonding method, the two substrates are continuously, that is, permanently bonded. Permanent bonding can also create a multi-layer structure (more than two substrates). This multilayer structure can be formed from the same material or different materials. There are various permanent joining methods.

In particular, a permanent bonding method by anodic bonding is used to permanently bond the ion-containing substrates to each other. Preferably, one of the two substrates is a glass substrate. The other substrate is, among other things, a silicon substrate. In anodic bonding, an electric field is applied along the two substrates to be bonded to each other. The electric field is formed, among other things, between two electrodes, each in contact with the surface of the substrate. The electric field causes ion transfer in the glass substrate and forms a space charge region between the two substrates. The space charge region creates a strong attraction on the surface of the two substrates, which contact each other after approaching, thereby forming a permanent bond. That is, the joining process is mainly based on maximizing the contact surfaces of the two surfaces.

Another permanent bonding method is eutectic bonding. In eutectic bonding, an alloy having a predetermined eutectic concentration is formed, or the eutectic concentration is adjusted during the process, especially during heat treatment. By exceeding the eutectic temperature (the temperature at which the liquid phase is in equilibrium with the solid phase of the eutectic mixture), the eutectic mixture is completely melted. The resulting eutectic liquid phase wets the surface of the unliquefied region. In the solidification process, the liquid phase solidifies into a eutectic mixture and a bond layer is formed between the two substrates.

Another permanent bonding method is fusion bonding. In fusion bonding, two flat, clean substrate surfaces are joined by contact. In the first step, the two substrates are brought into contact, and the two substrates are fixed by a van der Waals force. This fixation is referred to as temporary joining or temporary fixing (English: pre-bond). The joining force of the temporary bonding is strong enough to bond the substrates firmly so that mutual displacement due to the application of shearing force is generated only by applying a very large force. Can be generated. Preferably, the two substrates can also be relatively easily separated from each other, especially by applying a normal force. Heat treatment is performed on the substrate laminate to form a permanent fusion bond. This heat treatment forms a covalent bond between the surfaces of the two substrates. The permanent bond thus formed can only be achieved by applying a force large enough to cause the substrate to break.

When functional units, especially microchips, MEMS, sensors, LEDs, are mounted on the bonded substrate, they are preferably tentatively fixed and / or at low temperatures, especially at temperatures below 200 ° C., especially at room temperature. Joining is done. Preferably, a temperature below the temperature sensitivity limit of the functional unit is selected. In particular, the microchip is relatively strongly doped. Doping elements have increased diffusivity at high temperatures, which can lead to undesired and unfavorable distribution of dopants on the substrate. This measure can minimize thermal stress. In addition, the process time for heating and cooling is reduced. It also reduces displacement of different substrate regions, which are made of different materials and have particularly different coefficients of thermal expansion.

In a development of this, in order to allow bonding at low temperatures, especially for non-oxygen-affinity surfaces, especially when metal surfaces are used, for cleaning and activation of the substrate surface. Plasma processing is performed. On the other hand, single crystal silicon forming a silicon dioxide layer is suitable. The silicon dioxide layer is very suitable for bonding.

In the prior art, there are multiple approaches for direct bonding at lower temperatures. In the approach at PCT / EP2013 / 064239, a sacrificial layer is formed, which is dissolved in the substrate material during and / or after the joining process. Another approach in PCT / EP2011 / 064874 describes that the phase transition creates a permanent bond. The above publications specifically relate to metal surfaces that are joined by metal bonds rather than by covalent bonds. PCT / EP2014 / 056545 describes an optimized direct bonding process for silicon by cleaning the surface. The methods described above can be combined with the present invention to the extent that the disclosures of the above publications are referenced.

According to one advantageous embodiment of the present invention, in particular, materials of the same type should be bonded (bonded) to each other. Due to this homogeneity, the same physical and chemical properties exist on the contact surface (bonding boundary surface) of the substrate surface. This is especially important for connections where current should flow and should have a slight corrosion tendency and / or the same mechanical properties. Suitable homologous materials include:
-Copper-copper-aluminum-aluminum-tungsten-tungsten-silicon-silicon-silicon oxide-silicon oxide

The essence of one other aspect of the invention utilizes the ability of various materials, in particular metals and / or oxides, to bond under extreme influence, especially under extreme temperatures and / or pressures. This means that local temporary fixing between substrates, especially temporary fixing that is strongly limited to a part, is obtained. This is also called "tacking". The method according to the invention is preferably used for substrates having an amorphized layer. In this case, the amorphized layer can be brought to the substrate surface by a chemical deposition process and / or a physical deposition process, or can be formed directly on the substrate surface. The essence of one aspect of the invention, in particular one independent aspect of the invention, is that the amorphized layer is not formed by materials brought about by physical and / or chemical processes. It is formed by the phase transition of the substrate material. This can completely eliminate the deposition of particularly unwanted or harmful materials.

The following discloses another embodiment of the method step according to the invention:

Substrate Surface Pretreatment The present invention particularly relates to a method for tacking at least two substrates, at least one of those substrates, especially both, being treated prior to tacking, as described below. ing.

The surface area of the two substrates or at least one of the two substrates, especially the contact side (particularly the entire contact side), is amorphized prior to the joining process. According to the present invention, it is also possible to amorphize a plurality of surface regions smaller than the substrate surface, particularly surface regions separated from each other.

Amorphization forms a layer with a thickness of several nanometers in which the atoms are irregularly arranged. The irregular arrangement gives better bonding results, especially at relatively low temperatures.

In order to perform bonding and / or temporary fixing according to the present invention, particularly cleaning of the substrate surface (at least cleaning of the contact side) is carried out, in particular to remove oxides. In particular, cleaning and amorphization are carried out at the same time, and more preferably by the same treatment.

Another aspect of the invention is the use of particularly low energy particles, especially ions, such that the energy at which they collide with the substrate surface results in the amorphization described in accordance with the present invention. It will be adjusted.

Preferably, a step is performed to remove the oxide from the substrate surface. This is especially true for materials that form natural oxides in an oxygen-containing atmosphere, however, not for the oxygen substrate surface formed by the present invention, especially for silicon oxide. In particular, according to the present invention, harmful, unnecessary and / or natural oxides, especially metal oxides, are removed, especially at least in large part, and more preferably only such oxides are removed. .. In particular, the oxides mentioned above are sufficiently removed prior to the joining process, especially completely removed, thereby not being incorporated into the joining interface (the contact surface of the two substrates). Incorporation of this type of oxide can result in mechanical instability and very low bonding strength. Oxide removal is particularly carried out by physical or chemical methods. In one particularly preferred embodiment according to the invention, the removal of unwanted oxides is carried out by the same pretreatment module that performs the pretreatment of the substrate. This allows oxide removal, surface smoothing and / or amorphization to be performed simultaneously under particularly optimal conditions. In an alternative embodiment according to the invention, oxide removal is not performed in the same facility. In that case, it must be specifically guaranteed that no new oxidation of the substrate surface will occur when the substrate is transported between the two facilities. This can be ensured by the uninterrupted high vacuum during the removal of the oxide, during the transfer and during the pretreatment before joining.

In other words, the idea according to the present invention is to perform efficient temporary fixing, especially locally limited temporary fixing, by enhancing the bonding stability between the two substrate surfaces due to amorphization. It is in. At this time, amorphization solves a plurality of problems.

Amorphization according to the present invention results in flattening of the substrate surface, in particular. Thus, flattening is performed especially during amorphization, especially by the action of forces in addition to the planned flattening during the joining process.

Amorphization also guarantees higher mobility of the material to the interface. This can, in some cases, even out the remaining roughness. In particular, the remaining gaps between the substrate surfaces can be closed.

Amorphization creates a thermodynamic metastable state of the substrate surface (joint interface). This metastable state results in a (re) dislocation of the partial region of the amorphous layer to the crystalline state (especially after contact of the surface to be joined) in a further process step. In the ideal case, a complete dislocation of the amorphous layer occurs. The layer thickness that occurs after the contact of the amorphous layer and the subsequent heat treatment is particularly greater than zero.

Another idea according to the present invention is, in particular, to form an amorphous layer from the existing basic material of the substrate, especially by particle impact. In particular, no material is brought onto the surface of the substrate to be contacted prior to joining the substrates. Since the temporary fixing of the substrate is performed only at a few points in particular, the essence of another idea according to the present invention is to carry out the amorphization only at the point where the temporary fixing is planned. is there. Complete amorphization is preferred as long as the substrate temporarily fixed by tacking according to the present invention is joined over the entire surface in subsequent process steps.

By the methods according to the invention, in particular, at least one of the two substrate surfaces, particularly both of which are amorphized according to the invention, of those two substrate surfaces, complete and / or local and / Alternatively, it is possible to form a contact portion over the entire surface, particularly according to the type (sortenreinen).

The methods according to the invention are used, in particular, to form contact areas on two substrate surfaces, in particular two different substrate surfaces, that are complete and / or full and / or non-type-specific.

In particular, the following materials can be temporarily fixed to each other in any combination, especially the same material:
-Metal, especially Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Te, Sn and / or Zn,
·alloy,
• Semiconductors (correspondingly doped), especially
○ Elemental semiconductors, especially Si, Ge, Se, Te, B and / or α-Sn,
○ Compound semiconductors, especially GaAs, GaN, InP, InxGa1-xN, InSb, InAs, GaSb, AlN, InN, GaP, BeTe, ZnO, CuInGaSe2, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, Hg (1- x) Cd (x) Te, BeSe, HgS, AlxGa1-xAs, GaS, GaSe, GaTe, InS, InSe, InTe, CuInSe ² , CuInS ² , CuInGaS ² , SiC and / or SiGe,
-Organic semiconductors, especially flavantron, perinone, Alq3, perinone, tetracene, quinacridone, pentacene, phthalocyanine, polythiophene, PTCDA, MePTCDI, acridone and / or indanthrone.

In other words, the present invention relates to a method for direct bonding, particularly a method for limited direct bonding. Here, the idea on which the present invention is based is preferably that at least one surface or partial region of the surface (particularly located on the contact side) of the substrate is amorphous prior to the joining process or temporary fixation. It means to become. Amorphization is preferably performed by depositing a material that sublimates or condenses amorphous on the substrate surface using predetermined deposition parameters, but rather by forming an amorphous layer, especially on the substrate surface. It is done by changing, sublimating and / or making a phase transition. This is done by providing kinetic energy, in particular, by particle impacts, especially ion impacts, particularly preferably low energy ion impacts.

The at least partially amorphous structure of the formed amorphous layer is understood to be, in particular, a mixed form of a phase consisting of at least an amorphous phase and a crystalline phase.

The volume ratio of the amorphous phase to the total volume is called the degree of amorphization. According to the present invention, the degree of amorphization is particularly preferably higher than 10%, particularly higher than 25%, more preferably higher than 50%, particularly preferably higher than 75%, and most preferably. Is higher than 99%.

Amorphization is particularly limited to near-surface regions of the substrates to be bonded together, especially by selecting the temperature, pressure, ionic energy and / or ionic current density during amorphization as process parameters. .. In particular, in this case, the substrate material remains at least mostly crystalline, especially completely crystalline, except for layers that have been amorphized according to the present invention. In the first embodiment according to the present invention, only the substrate surface of the first substrate or a part of the substrate surface is amorphized. The thickness d of the amorphous phase immediately after the amorphous layer is formed on the substrate surface according to the present invention is particularly preferably less than 100 nm, particularly less than 50 nm, more preferably less than 10 nm, particularly preferably less than 5 nm. Is less than 2 nm.

According to one development according to the present invention, the substrate surface of the first substrate and the substrate surface of the second substrate are amorphized, or a partial region of the substrate surface is amorphized. In one particular embodiment according to the invention, in order to form the same amorphous layer using the same process parameters, the amorphization of the two substrate surfaces can be done in the same equipment, especially at the same time. Will be done. In the formed amorphous layer, the thickness d1 of the first amorphous layer of the first substrate and the thickness d2 of the second amorphous layer of the second substrate are equal to each other. The ratio of the thicknesses of the two amorphous layers, especially the two amorphous layers formed at the same time, d1 / d2 is 0.6 <d1 / d2 <1.4, especially 0.7 <d1 / d2 <. 1.3, more preferably 0.8 <d1 / d2 <1.2, particularly preferably 0.9 <d1 / d2 <1.1, most preferably 0.99 <d1 / d2 <1. It is 01.

Substrate surfaces or partial regions of the substrate surface treated according to the present invention have a slight but not particularly negligible roughness before, during and after amorphization. doing. In one preferred embodiment, the roughness of the substrate surface or the roughness of the surface of the substrate treated in accordance with the present invention is reduced during amorphization and after amorphization. Has a minimum value. Roughness is expressed as arithmetic mean roughness, root mean square roughness, or average maximum height. The values obtained for the arithmetic mean roughness, the root mean square roughness and the average maximum height are generally different for the same measurement interval or measurement area, but in the same order range. Surface roughness measurements are made using one of the measuring devices (known to those of skill in the art), especially using a profiler and / or an atomic force microscope (AFM). In this case, the measurement area is particularly 2 μm × 2 μm. Therefore, it can be understood that the range of the following numerical values regarding the roughness is either a value regarding the arithmetic mean roughness, a value regarding the root mean square roughness, or a value regarding the average maximum height. According to the present invention, the roughness of the substrate surface before amorphization or the roughness of the partial region of the substrate surface treated according to the present invention is particularly less than 20 nm, particularly less than 10 nm, and more preferably 8 nm. Less than, particularly preferably less than 4 nm, most preferably less than 1 nm. The roughness of the substrate surface after the amorphization or the roughness of the partial region of the substrate surface treated according to the present invention is particularly preferably less than 10 nm, particularly less than 8 nm, more preferably less than 6 nm, particularly preferably. Is less than 4 nm, most preferably less than 1 nm.

The ratio of the cleaned and / or amorphized surface area f to the total surface area F of the substrate is referred to as cleanliness r. The cleanliness was particularly greater than 0, especially greater than 0.001, more preferably greater than 0.01, particularly preferably greater than 0.1, and most preferably prior to the joining process according to the invention. It is preferably 1. The cleanliness r also corresponds, in particular, to the ratio of the area f'of the tacked partial region to the area F of the entire surface.

Cleaning and / or amorphization is preferably performed in the pretreatment module, especially in the pretreatment module formed as a vacuum chamber. The vacuum chamber can be evacuated, in particular, to less than 1 bar, especially less than 1 mbar, more preferably less than 10 ^-3 mbar, particularly preferably less than 10 ^-5 mbar, most preferably less than 10 ^-8 mbar. .. The vacuum chamber is evacuated, especially to the pressures mentioned above, and more preferably completely evacuated before using the ions, especially for amorphization. In particular, the proportion of oxygen in the process chamber is greatly reduced to the extent that no new oxidation can occur on the surface of the substrate, and in particular, the proportion of moisture (water content) is also greatly reduced.

The ionization process is specifically described in PCT / EP2014 / 063303 and to that extent this publication is referenced. By accurately selecting the angle of incidence, the removal rate and thus the surface roughness can be controlled. In particular, the angle of incidence is selected to maximize amorphization, removal of impurities, especially removal of oxides and surface smoothing, in order to obtain the desired results. Maximization is, in particular, complete removal of impurities, especially oxides, further smoothing of the surface, especially complete smoothing (ie, reduction of roughness value to 0) and optimally amorphized. It is understood that it is a layer. Gas or mixed gas and parameters such as particle kinetic energy, ion emission angle of incidence, current density and processing time are described in PCT / EP2014 / 063303.

Alignment / Positioning and Temporary Fixing / Tacking After pretreatment (amorphization and / or cleaning) of at least one of the two substrate surfaces, a mutual alignment of the two substrates is performed in the alignment module, in particular. .. In particular, alignment by a position adjusting facility or an alignment facility (English: aligner) is performed particularly based on an alignment mark on a substrate. The moment when the substrate is placed / contacted is very important. This is because alignment errors are cumulative and / or can no longer be easily corrected. This will result in a large number of defective products. Therefore, according to the present invention, it is attempted to achieve a position adjustment accuracy or offset of less than 100 μm, particularly less than 10 μm, particularly less than 1 μm, particularly preferably less than 100 nm, and particularly preferably less than 10 nm.

Tacking is performed, in particular, in the same module in which each substrate is also aligned / performed, i.e. in the alignment module. In one alternative embodiment, tacking can also be done in a separate temporary fixing module. Tacking is performed using a temporary fixing unit, which is suitable for at least locally coupling the two substrates to each other. In particular, a predetermined (slight) force and / or energy is applied to the entire surface or preferably to the (s) partial surfaces for temporary fixation. As a result, sufficient bonding strength can be obtained for temporary fixing. Preferably, temporary fixing does not achieve perfect bonding strength between the substrates. The bond strength is preferably adjusted so that the substrate is fixed during transport.

According to the first embodiment, only a partial surface of one substrate is in contact with the other substrate. This is done, in particular, by applying a local force to achieve an equal amount of pressure for spontaneous bonding on the partial surface for temporary fixing of the substrate. Spontaneous bonding depends on the surface type (material, roughness, etc.) and surface pretreatment (polishing, chemical cleaning, etc.). A junction is said to be spontaneous if the junction wave propagates naturally, without any external action (eg, pressure). Therefore, the alignment is determined with a predetermined alignment accuracy without using the unfavorably high contact force or temperature required to perform the joining over the entire surface.

In the second embodiment, tacking is performed over the entire surface, and a corresponding bonding is realized by a lower bonding force with respect to the entire substrate surface. The bond strength is sufficient, in particular, to secure the substrate during transport. Basically, it is important that the bond strength is a function of roughness, degree of amorphization and thickness of the amorphous layer and the force applied.

In one embodiment of the invention, the temporary fixation unit is a device that can apply heat locally, especially in a pulsed manner, to the contact surface. In particular, electric or magnetic fields or electromagnetic radiation, especially lasers, can be used to form the heat.

In the developed form of the present invention, the temporary fixing unit is formed as an electrode. The electrodes are capacitively coupled to the counter electrode, especially to the plate of the corresponding sample holder or part thereof, via two substrates that are coupled to each other. The electrodes have electrode tips that extend as sharply as possible, among other things, to increase the strength of the electric field. The strength of the electric field is particularly greater than 0.01 V / m, particularly greater than 1 V / m, more preferably greater than 100 V / m, particularly preferably greater than 10,000 V / m, and most. It is preferably larger than 1 MV / m. In one highly preferred embodiment, an AC voltage is applied to the electrodes. The frequency of the AC voltage is particularly higher than 10 Hz, especially higher than 1,000 Hz, more preferably higher than 100,000 Hz, and particularly preferably higher than 10 MHz. The AC voltage is particularly pointed according to the present invention when the substrate is formed of a dielectric material, especially primarily of a dielectric material, which acts as a barrier to the current flow of DC voltage. Suitable for tacking. By using an AC voltage in accordance with the present invention, heating by the so-called "skin effect" is performed, at least in the partially present metal layer.

In one alternative evolution, the temporary fixing unit is formed as equipment for forming electromagnetic radiation, especially as a laser. The laser has, in particular, a wavelength that optimally heats at least one material in the substrate laminate. Wavelengths range from 1 nm to 1 mm, more preferably from 200 nm to 1 mm, more preferably from 400 nm to 1 mm, particularly preferably from 600 nm to 1 mm, most preferably from 800 nm. It is in the range up to 1 mm. Therefore, the laser is, among other things, an infrared laser. The diameter of the laser beam is particularly less than 10 mm, especially less than 5 mm, more preferably less than 2 mm, particularly preferably less than 1 mm, and most preferably less than 0.5 mm. The laser output is particularly higher than 10 W, especially higher than 100 W, more preferably higher than 1,000 W, and particularly preferably higher than 0.01 MW.

In one other alternative embodiment, the temporary fixation unit has a microwave source, in particular an amplitron, magnetron, Stabilotron, Carznotron or klystron. The microwaves of the microwave source are guided and particularly focused by the optics, especially by the waveguide, and more preferably by the hollow waveguide, where the substrate should be tacked, especially this is the tacking of the substrate. It is done without microwaves being applied where it should not be. The use of a microwave source is particularly suitable when the substrate surface is wetted by residual moisture, especially with a monoatomic layer of water. The surface of the substrate is strongly heated by water due to the intended limited irradiation of the microwaves, resulting in oxygen bridges on the surface of the substrate, especially the silicon and / or silicon dioxide surfaces. A permanent bond is established. The diameter of the microwave beam focused by the waveguide, especially by the hollow waveguide, is particularly less than 10 mm, especially less than 5 mm, more preferably less than 2 mm, particularly preferably less than 1 mm, most preferably 0.5 mm. Is less than. The output of the microwave source is particularly higher than 10 W, especially higher than 100 W, more preferably higher than 1,000 W, and particularly preferably higher than 0.01 MW.

In one other embodiment of the invention, the temporary fixing unit is configured as a pressing device formed to apply one or more local surface loads to the substrate. The surface load is applied, in particular, by the pressing ram. The pressing area of the pressing ram on the pressing side, which is located opposite to the bonding side of the substrate, is particularly preferably between 0.5 mm ² and 1,000 mm ² , especially between 0.5 mm ² and 500 mm ^2. It ranges from 1 mm ² to 100 mm ² , and more preferably from 4 mm ² to 100 mm ² . The / transmissible pressure transfer using the press ram, in particular between from 0.1 N / cm ² to 1,000 N / cm ^2, especially between the 1N / cm ² to 600N / cm ^2, further preferably Is between 1 N / cm ² and 400 N / cm ² . The control is performed by the pressure or force applied by the pressing ram to the substrate. The size of the partial surface for temporary fixing depends on the specified or predetermined joint strength for temporary fixing. This is particularly the case for 200mm silicon wafer, greater than 0.1 J / m ^2, especially greater than 0.2 J / m ^2, further preferably greater than 0.5 J / m ^2, particularly preferably 1J Greater than / m ² and most preferably greater than 1.5 J / m ² .

In particular, one of the two substrate holders has a notch or notch, which allows the pressing ram to act directly on the substrate. This process is carried out by one pressing ram, particularly in the center of the substrate, or optionally by multiple pressing rams. Covalent bonds occur on the partial surfaces affected by the (s) pressing rams, which eventually apply pressure over the entire surface and to heat the substrate pair as needed. It is strong enough to transport the tacked substrate pair to the junction chamber. Therefore, the alignment unit can be designed for a temporary fixing resultant force lower than that of the prior art. The forces required to achieve the (maximum required) bonding strength are, in particular, surface quality, amorphous layer thickness, degree of amorphization, surface roughness, surface cleanliness and / Or depends on the material or material combination of the substrate.

When two pressing rams are used, the pressing rams are arranged at an angle of 180 ° to each other in particular. In one other embodiment, one pressing ram is centered and the other pressing ram is positioned at the average radius or the outer radius. When three pressing rams are used, they are arranged, among other things, in an equilateral triangle (at an angle of 120 ° to each other). When four pressing rams are used, the four pressing rams are positioned at an angle of 90 ° to each other. When at least two pressing rams are used, the two pressing rams are preferably arranged symmetrically. If at least two pressing rams are arranged symmetrically, one additional pressing ram may be used in the center in addition to those pressing rams. In particular, the pressing rams are evenly distributed and arranged on the substrate.

When multiple pressing rams are used, the pressing rams can be continuously applied individually or in groups to minimize the load on the substrate holder.

In one embodiment according to the invention, the temporary fixing module has only one temporary fixing unit suitable for mechanically applying pressure to the surface of the substrate laminate, especially to the surface of the product substrate. ing. According to the present invention, the temporary fixing unit may be a point load unit. The point load unit is advantageously configured in a pin shape. The tip of the pin can have various shapes. That is, a sharply extending shape, a rounded shape, particularly a spherical shape or a rectangular shape is also conceivable. Tacking utilizes locally applied forces to achieve an equal amount of pressure for spontaneous bonding on the partial surface, thereby temporarily fixing or tacking the substrate.

In the developed form of the present invention, the temporary fixing unit can be additionally heated. Most preferably, the temperature of the temporary fixing unit is better than 5 ° C, especially better than 2 ° C, more preferably better than 1 ° C, particularly preferably better than 0.1 ° C. Can be adjusted with an accuracy better than 0.01 ° C. The controllable temperature range of the temporary fixing unit is particularly between room temperature and 700 ° C., especially between room temperature and 300 ° C., more preferably between room temperature and 120 ° C., particularly preferably between 18 ° C. and 30 ° C. Most preferably at room temperature. The application of heat results in particularly (locally limited) heating.

In one other embodiment according to the invention, the point load unit has a laser capable of focusing the laser, especially as accurately as possible. The coherent laser light is focused by the optics, among other things, on the focal point located between the product substrate and the support substrate, i.e., located in the coupling layer. This results in intensive and fast heating of the binding layer, as limited as possible. Preferably, the laser is pulse controlled, especially by continuous on / off, especially by on / off at high frequencies. With such pulse control, heating of the peripheral part is extremely sufficiently avoided. The laser is, in particular, an infrared laser, a laser for visible light or a laser for UV light.

In one particularly preferred embodiment, the temporary fixing unit is integrated with a heating unit and / or a pressing unit and / or a laser unit, resulting in thermal and / or mechanical requirements and / or photochemistry. Requests are realized at the same time. According to one preferred embodiment of the invention, the temporary fixing unit is movable at least along the Z axis in any of the embodiments.

According to another embodiment of the present invention, it is also conceivable to tack over the entire surface and to achieve a reasonable bond by a smaller force, but by a force on the entire substrate surface. In this embodiment, the temporary fixing unit is, among other things, a pressing device capable of applying a surface load over the entire surface with one pressing plate. Provisional junctions formed is greater in particular, of between 0.01 J / m ² to 5 J / m ^2, preferably greater than 0.1 J / m ^2, preferably than 0.2 J / m ² , and further preferably greater than 0.5 J / m ^2, particularly preferably greater than 1 J / m ^2, particularly preferably being greater binding stability than 1.5 J / m ^2.

Preferably, the present invention is applied to a polished substrate surface that provides pretreatment for covalent bonding. The polished substrate surface typically has an average roughness Ra of less than 20 nm, preferably an average roughness Ra of less than 10 nm, measured in an area of 2 × 2 μm ² using an AFM, and further. The surface of the substrate preferably has an average roughness value Ra of less than 2 nm, and particularly preferably has an average roughness value Ra of less than 1 nm. The average roughness value to the arithmetic average roughness value Ra represents the technical surface roughness. In order to obtain this measured value, the surface is scanned in a predetermined measurement section, and all the differences in height and depth of the rough surface are recorded. After a particular integral of this roughness course in the measurement interval has been calculated, the result is subsequently divided by the length of the measurement interval.

In particular, local forces are applied so that the microroughness of the substrate surface is overcome and the surface molecules of the opposing substrates form binding energies in as much proportion as possible. In particular, a polished substrate surface made of a metal such as aluminum or copper, an oxide, a semiconductor material and glass is suitable for temporary fixing by applying a local force. For many types of joints, especially glass frit or eutectic joints, or for unpolished metal surfaces or solder joints, spontaneous bonds are formed on some surfaces with a force within the disclosed range. The surface quality is not sufficient to do so. In these cases, preferably, after alignment and contact, additional mechanical tightening of the substrate laminate is performed. This is achieved, in particular, by the tightening described in PCT / EP2013 / 056620.

As a particularly independent aspect of the present invention, it is conceivable not to use the polished substrate surface and / or omit the pretreatment, especially when the substrates are provided with a spontaneously bonded structure. .. This is especially the case when the substrate has a surface structure similar to a hook-and-loop fastener. Contact causes elastic deformation of the surface structure as well as plastic deformation, and in the microscopic dimension, results in shape bonding of the substrate surface. In subsequent joining steps, the temporary fixation can be extended over the entire surface and can be strengthened by using large forces and high temperatures over the entire surface.

Joining Joining is performed specifically in a separate joining chamber, where the joining chamber is specifically incorporated into the cluster equipment and connected to a process chamber for pretreatment, especially for amorphization. More preferably, it can be transferred from the process chamber to the junction chamber while the vacuum is always maintained.

In one other step according to the invention, a temporarily fixed / tacked substrate laminate joining process is performed to form a permanent bond. The joining process consists, in particular, of force and / or temperature action. The bonding temperature according to the present invention is particularly less than 1,100 ° C., particularly less than 400 ° C., more preferably less than 200 ° C., particularly preferably between 18 ° C. and 200 ° C., most preferably room temperature. In this case, the bonding force is particularly between 0.5 kN and 500 kN, preferably between 0.5 kN and 250 kN, more preferably between 0.5 kN and 200 kN, particularly preferably between 1 kN and 100 kN. Between. A reasonable pressure range is obtained by standardizing the bonding forces according to the invention with respect to the area of the substrate. Bonding strength is sought for the bonding over the entire surface is preferably greater than 1 J / m ^2, preferably greater than 1.5 J / m ^2, greater than 2J / m ² and more preferably .. The substrate can have any shape. In particular, the substrate is circular and is characterized by diameter according to industrial standards. For substrates, especially for so-called wafers, the industry standard diameters are 1 sol, 2 sol, 3 sol, 4 sol, 5 sol, 6 sol, 8 sol, 12 sol and 18 sol. However, basically, by the method according to the present invention, each substrate, particularly a semiconductor substrate, can be processed independently of its diameter.

According to the present invention, the substrate surfaces are further approached to each other at the interface (formed along the contact surface of the substrate surface) by applying pressure, unless contact has yet been made by temporary bonding. To do. As the substrate surfaces continue to approach each other, the cavities shrink continuously and eventually close. According to the present invention, amorphization plays an important role in this case. This is because the amorphous state causes isotropic electrostatic attraction on the surface. Since none of the amorphous layers in contact with each other on the substrate surface are crystalline, there is no need to consider continuous and adapted contact of the crystal lattice. Therefore, when the surfaces of two substrates having an amorphous layer come into contact with each other, a new larger amorphous layer is formed. The transition is fluid and, according to the present invention, is particularly characterized by the complete elimination of the boundary layer.

Especially immediately after the joining process, the thickness of the entire amorphous layer of the bonded substrate laminate is particularly less than 100 nm, particularly less than 50 nm, more preferably less than 10 nm, particularly preferably less than 5 nm, most preferably. Is less than 2 nm. The joint strength has the following parameters, that is,
− Amorphous layer thickness,
-Roughness,
-The number of adversely acting ions present in the boundary layer, and
− Bonding force,
Affected by.

The bonding strength increases particularly as the amorphous layer becomes thicker. The thicker the amorphous layer, the greater the number of irregularly arranged atoms. Atoms that are irregularly arranged are unaffected by long-range order and / or short-range order, and are bounded by the processes described above, especially by diffusion and / or approach due to pressure. The cavity is filled in. This increases the contact area and thus the bonding strength. Preferably, the average thickness of the amorphous layer is greater than the average roughness, thus providing sufficient atoms in the amorphous phase to close the cavity. In particular, a substrate surface having a very low roughness is selected so that the substrate surface has as small a cavity as possible. That is, the lower the roughness of the substrate surface, the thinner the amorphous layer can be, in order to achieve the desired bonding result. According to the present invention, a reasonably thick amorphous layer is achieved with reasonably high ion energy, which allows ions to penetrate as deeply as possible into the substrate.

Bond strength is also a function of the cleanliness of the amorphous phase. All deposited unwanted atoms or ions can lead to destabilization in particular, and in particular to reduce junction stability. Therefore, the ions used for amorphization may adversely affect the bonding strength, especially when those ions remain in the amorphous layer after amorphization. Therefore, in addition to the reasonably low ion energy, it is also attempted to achieve the lowest possible current density and the shortest possible processing time. By multiplying the current density by the processing time, the ions per unit area that collide with the substrate surface within the processing time can be obtained. To minimize this number, the current density can be reduced and / or the processing time can be shortened. The smaller the number of ions per unit area that collides with the substrate surface, the smaller the number of ions injected into the amorphous layer. In particular, particles that cannot be bonded to the material to be amorphized and are present as defects, especially point defects, have a disadvantageous effect on the bonding strength. This includes, among other things, rare gases and even molecular gases. In particular, according to the present invention, it is possible to use a gas or a mixed gas containing ions that are responsible for strengthening the junction interface, especially by forming a new phase. One preferred possibility is the use of ionized nitrogen to nitrid the amorphous layer.

Similar considerations apply to all other types of elements that bind to the material of the amorphous layer, especially metal, covalent or ionic. In order to reduce the current density, a substrate surface that already has the minimum roughness is particularly suitable. The smoother the substrate surface, the lower the number of ions required to reduce the roughness and the lower the energy, according to the present invention. This can reduce the ion energy and / or ion current, and thus also the number of ions per unit area, which also reduces the number of ions incorporated, resulting in the number of defects. Will decrease, and eventually the bonding stability will increase.

Bonding strength is a function of bonding force. This is because the higher the bonding force, the stronger the substrate surface approaches, and the better the contact surface is obtained. The higher the bonding force, the closer the substrate surfaces are to each other, and at the same time the cavity is closed by the locally deformed region.

In particular, the heat treatment separate from the amorphization process is performed in an external (especially cluster-incorporated) heat treatment module, especially during and / or after or after bonding in a bonder. The heat treatment module can be a hot plate, a heating tower, a furnace, in particular a continuous furnace or any other type of heat generator. The heat treatment is carried out at a temperature of particularly below 500 ° C., particularly below 400 ° C., more preferably less than 300 ° C., particularly preferably less than 200 ° C., most preferably less than 100 ° C., but above room temperature. The heat treatment time is such that the thickness of the amorphous residual layer according to the present invention after the heat treatment is less than 50 nm, particularly less than 25 nm, more preferably less than 15 nm, particularly preferably less than 10 nm, and most preferably 5 nm. Selected to be less than.

In particular, a phase transition from an amorphous state to a crystalline state occurs during and / or after bonding and / or during heat treatment. In one particularly preferred embodiment according to the invention, the process parameters described above are selected so that a complete phase transition of the amorphous layer to the crystalline phase takes place.

According to one advantageous embodiment of the present invention, the mass percentage (m%) is particularly higher than 95 m%, especially higher than 99 m%, more preferably higher than 99.9 m%, particularly preferably. Is higher than 99.99 m%, most preferably higher than 99.999%, a material having the cleanliness of the material to be dislocated is selected. Better bonding results are achieved due to the high cleanliness of the substrate material.

Finally, the joined substrate is removed from the high vacuum. This can be done, for example, via a lockgate, especially via a "gate valve".

Very high bonding strength (> 2J / m ² ) can be achieved at room temperature by the method and apparatus according to the invention. At that time, a device with precise position adjustment may be used, or a device without precise position adjustment (without a position adjustment unit) may be used. The pretreatment module forms, among other things, the amorphized surface of the substrate (eg, semiconductor materials, oxides or polished metals such as Al, Cu, glass, ceramics). The substrate is particularly activated, and when the two substrates are brought into contact, a high percentage of microcontact surface contact is achieved. This allows spontaneous covalent bonds to be formed at low temperatures and also at room temperature. This spontaneous bonding is facilitated by contact in high vacuum, preferably in ultra-high vacuum (<1E ^-6 mbar, more preferably <1E ^-7 mbar).

Further advantages, features and details of the present invention will be apparent from the following description and drawings of suitable examples.

FIG. 6 shows a schematic view of one embodiment of the apparatus according to the invention suitable for carrying out the method according to the invention, which is represented by a plan view viewed from above. FIG. 5 shows a partial side view of the embodiment shown in FIG. 1, including an alignment module F, a joining station G, and a transfer chamber B provided between them, one each. FIG. 3a shows a plan view of the first substrate of the substrate laminate, which is generally suggested to be in a temporarily fixed state, and FIG. 3b is a first view shown in FIG. 3a in a joined state. The plan view of the substrate of is shown. A side view of the substrate laminate and a partially enlarged view thereof are shown. FIG. 5a shows a plan view of the substrate laminate in which the temporary fixing region is represented by hatching, and FIG. 5b shows a plan view of the bonded substrate laminate.

In the figure, the same feature part or the feature part having the same function is given the same reference number.

Hereinafter, the present invention will be described in detail based on examples. The plurality of feature parts mentioned in the description can be used alone or in any combination.

The idea on which the illustrated embodiments are based is, in particular, to interact the substrates 1 and 2 and at the same time semi-automatically contact them at selected locations, at least one of the two substrates. Pressure is concentrated on the substrate of the above, preferably on the upper substrate 1, by the pressing ram 6, preferably at the center M of the substrate laminate, and by this contact, particularly the center M of the upper first substrate 1. In the above, the two substrates are fixed to each other as the substrate laminate 3 by temporarily fixing the substrates.

In the equipment according to the invention, in particular, multiple process steps, namely pre-positioning, pre-treatment (oxide removal and / or amorphization), alignment and temporary fixing, joining, and inspection (measurement) as needed. ), Are integrated. In particular, the facility has at least one module group that is closed to the ambient atmosphere and has a work space 20 specifically designed to create a high vacuum atmosphere k. In particular, while providing a transfer chamber B provided with an exercise device (robot system) between the modules, each of these modules, particularly the preprocessing module D, the alignment module F, and the joining module G, is continuously arranged. Can be done.

Alternatively, according to one preferred embodiment, each module can be arranged in clusters or in a star shape around a central module with an exercise device (robot system). Star-shaped variations are particularly advantageous when other modules according to the invention are arranged around the central module, especially if those modules are dockable to the central module. The kinetic device is advantageously an industrial robot, especially an industrial robot equipped with an end effector.

FIG. 1 shows a top view of an apparatus suitable for carrying out the method according to the invention, comprising individual modules or stations within the work space 20. The lock A is used to carry the substrates 1 and 2 into the high vacuum atmosphere k of the work space 20 from the ambient pressure outside the work space 20. At the other end of the work space 20, the lock A is used to carry out the substrates 1 and 2 processed in each module as a particularly joined substrate laminate 3.

Carry-in and carry-out are represented by arrows b in FIG. Here, the lock A means that the loading of the new substrates 1 and 2 or the export of the joined substrate laminate 3 does not affect the vacuum value of the high vacuum chamber (for example, the transport chamber B), or the effect on the vacuum value. Is guaranteed to remain minimal. In particular, the lock A comprises a lock chamber, which is connected to the surroundings by at least one valve to bring the substrate into the chamber. The lock chamber is also connected to the high vacuum perimeter by at least one second valve. The supply of the substrates 1 and 2 to the high vacuum is particularly performed via one of each of the transfer chambers B. Lock A is specifically equipped with a pump system that reduces the pressure in the lock chamber from ambient pressure (approximately 1,013 mbar) to close to the pressure in transfer chamber B after valve closure. Can be made to.

This pressure is particularly less than 1E ^-4 mbar, preferably less than 1E ^-5 mbar, more preferably less than 1E ^-6 mbar, particularly preferably less than 1E ^-7 mbar. When the target pressure in the lock chamber is reached, the valve can be opened towards the transfer chamber B and also via the robot arm, especially via the robot arm attached to the transfer chamber B. 2 can be transported from the gate A to the target chamber, especially to the pre-positioning device C.

As a pump system for achieving such a vacuum, positive displacement pumps are particularly suitable, especially idle-running scroll pumps, piston pumps or diaphragm pumps. Turbo molecular pumps are suitable for the range from 1 mbar or less to 1E ^-6 mbar, and "cryo pumping" is suitable for very high vacuums up to 1E ^-8 mbar.

The substrates 1 and 2 are transported from one process station / process module to another process station / process module via the robot arm 9, in particular one or more, with substantially no change in vacuum level. Is conveyed through the transfer chamber B of. This step is represented by arrow a in FIG. In one or more transfer chambers B, a vacuum of preferably less than 1E ^-5 mbar, preferably less than 1E ^-6 mbar, more preferably less than 1E ^-7 mbar, particularly preferably less than 1E ^-8 mbar. Is maintained throughout the transfer. The transfer chamber B can be isolated from each process module via a valve 14, and the transfer chamber B is a robot provided with grips (not shown) for substrates 1, 2 to substrate laminate 3. It has an arm 9.

First, the substrates 1 and 2 are pre-positioned by the pre-position adjusting device C. In the preferred embodiment shown in FIG. 1, one pre-positioning device C is provided for each of the two substrates 1 and 2. The substrates 1 and 2 are brought into a high vacuum environment, especially in an orientation that is not exactly known. The typical position tolerance of the substrates 1 and 2 in the lock A is in the range of several mm to several hundred μm. In particular, the target value of rotation of the substrates 1 and 2 about the Z axis (vertical axis) is considered to be +/- 180 °. Rotational or angular positions are determined based on the edges of the substrate, especially on square substrates or on flats or notches on wafers. The pre-positioning device C utilizes this peripheral geometric feature to position the substrates 1 and 2 with an accuracy of +/- 100 μm along the X and Y axes, and with respect to the Z axis (vertical axis). Roughly pre-positions with an accuracy of +/- 0.1 °.

When the pre-position adjustment is completed, the substrates 1 and 2 are further transported to the pre-processing station D via the transport chamber B. For preprocessing station D, see PCT / EP2014 / 063303. The pretreatment station D is a module for plasma pretreatment of the substrate surface. In the pretreatment, particles are injected under the substrate surfaces 1o and 2o of the substrates 1 and 2. In particular, in the plasma pretreatment, the substrate surface 1o having silicon is amorphized by the plasma treatment in the thickness range of 1 nm to 20 nm. Highly reactive molecules remain on the surface, and these molecules newly bind to the molecules of the bonding partner (second substrate 2) at high speed. Amorphization reduces the energy (force) required to close the microcavities. The maximum number of molecules can be brought into contact, in which case the proportion of contact surfaces is high, which in turn increases the bonding strength. In addition, pretreatment removes organic impurities and oxides of metallic or semiconductor materials. This is the desired effect for later creating a conductive surface.

After the substrates 1 and 2 have been preprocessed in one pretreatment module D, the substrates 1 and 2 are transferred to the alignment module in which the temporary fixing module F is incorporated. In the path to the temporary fixing module, one of the two boards 1 and 2 is sent to the reversing station E. This is because the substrates 1 and 2 are preferably carried into the module with the surfaces to be joined (board surfaces 1o and 2o) facing upward. The process station, particularly the pretreatment module D, is preferably designed to treat the substrate surfaces 1o and 2o to be joined from above.

With respect to the alignment module F, preferably, the upper substrate 1 is aligned with the substrate surface 1o to be joined facing downward. The reversing station E inverts the substrate 1 by 180 ° and thereby brings it into the alignment module F. The transfer is preferably carried out through one of the transfer chambers B.

The alignment module F is shown in the embodiment shown in FIG. 1 as one module in a facility comprising a series of continuously arranged process modules. The alignment module F is equipped with a temporary fixing device for tacking. Therefore, tacking is done in the same module. In one alternative embodiment, tacking can also be done in separate modules.

The temporary fixing module has, among other things, a load device, especially a pressing ram 6, especially a centrally located pressing pin. After alignment, the substrates 1 and 2 are brought into contact with each other, and at least their small partial surfaces are spontaneously joined by applying a centrally located local surface load by the pressing ram 6, and the substrate 1 The exact alignment of 2 and 2 is established so that the substrates 1 and 2 are no longer displaced until they are joined in the joining module G.

In an alternative embodiment, a plurality of local surface loads are applied, for example, by a plurality of pressing rams 6. As a result, the plurality of local partial surfaces are spontaneously joined, and the alignment is confirmed at the plurality of points, so that the joining is performed better at each place or the force applied in the joining is more applied. Less.

The alignment module F shown in FIG. 2 is preferably provided with a valve 14 for carrying in the substrates 1 and 2 and for carrying out the aligned and fixed substrate laminate 3. It has two openings. Alternatively, the alignment module F has only one opening with a valve 14 for loading and unloading. FIG. 2 shows an upper substrate accommodating device 4 for accommodating the upper substrate 1 in the accommodating body (not shown) in the alignment module F. When accommodating the substrate 1 in the substrate accommodating device 4, only the accommodating surface comes into contact with the accommodating side of the substrate 1. On the side opposite to the accommodating side, a pre-treated, particularly amorphized substrate surface 1o of the substrate 1 is arranged. The accommodating surface of the substrate accommodating device 4 is particularly well adapted to the dimensions and peripheral contours of the substrate 1 used.

FIG. 2 shows a lower substrate accommodating device 8 for accommodating the lower substrate 2 in the accommodating body (not shown) in the alignment module F. When the substrate 2 is accommodated in the substrate accommodating device 8, only the accommodating surface comes into contact with the accommodating side of the substrate 2. On the side opposite to the accommodating side, a pretreated, particularly amorphized substrate surface 2o of the substrate 2 is arranged. The accommodating surface of the substrate accommodating device 8 is particularly well adapted to the dimensions and peripheral contours of the substrate 2 used.

The lower substrate accommodating device 8 is arranged on the alignment unit 7, and by using the alignment unit 7, the X direction, the Y direction, the rotation direction, and the angle of the lower substrate 2 facing the upper substrate 1 The position can be aligned (wedge error compensation).

A reference mark 1'is provided on the upper substrate 1. The substrate 1 can be formed, in particular, as a product substrate having a structure that is part of a microelectronics module, an optical module, a micromechanical module, or a microfluidic module. Further, the reference mark 2'is provided on the lower substrate 2. The substrate 2 can be formed, in particular, as a product substrate having a structure that is part of a microelectronics module, an optical module, a micromechanical module, or a microfluidic module.

A preferred embodiment for fixing the substrates 1, 2 to the wafer to each sample holder is electrostatic fixing of the wafer in high vacuum or mechanical fixing by a clamp. In particular, the substrate accommodating devices 4 and 8 to the alignment module F are parallel to each other by using the alignment unit 7 to incline the two substrates 1 and 2 with respect to the X-axis and the Y-axis for wedge error compensation. It can be aligned in a short distance. This is done before alignment along the X-axis, Y-axis and rotation axis, or before contact along the Z-axis. Alternatively, wedge error compensation can be performed by an actuator in the alignment unit 7. However, the equipment has, among other things, a system for non-contact wedge error compensation between parallel aligned substrates, which is specifically referred to in WO 2012/028166 (WO2012 / 028166A1). I want to.

Further, the substrate accommodating device 4 has a hole or notch or notch for the pressing ram 6 in particular to exert a local action on the substrate 1 by the pressing ram 6.

Preferably, the pressing ram 6 acts on the center of the substrate (center M), which causes the mechanical stresses of various heat supplies to the upper substrate 1 and the lower substrate 2 to cause the heat of the material. Based on swelling, it is well avoided. However, unlike this, it is also conceivable to use multiple pressing rams, especially in the case of pure room temperature processes, or when processing materials with no or very little thermal expansion.

In one alternative embodiment, the upper substrate holder 4 can be flexibly formed to locally transfer the surface load of the pressing ram 6 to the substrate pair.

In the embodiment shown in FIG. 2, only one pressing ram 6 is provided. The pressing ram 6 applies mechanical pressure to the surface of the substrate laminate 3, especially to the accommodating side of the substrate 1.

Preferably, the pressing ram 6 is formed as an actuator capable of contacting the accommodating side of the upper substrate 1 under control and adjusting a predetermined force applied. Above all, this force is controlled by control, especially via pressure or current. More preferably, the force is adjusted via the weighing cell in order to apply a suitable contact force that is accurately reproducible and calibrated.

The pressing ram 6 is advantageously configured in a pin shape. The tip of the pin can have various shapes. That is, a sharply extending shape, a rounded shape, particularly a spherical shape or a rectangular shape is also conceivable. The contact surface of the pressing ram can be curved convexly or formed flat.

In this embodiment according to the present invention, temporary fixing is performed at the center of the substrate by using an actuator. At this time, the resultant force Fa acts on the surface center of gravity of the contact surfaces of the substrates 1 and 2 by the drive control of the actuator or the actuator device. The equipment, among other things, has sensors that perform force monitoring to control the applied pressure.

In one other embodiment, the pressing ram 6 is formed as a pressure elastic ram (eg, by an elastomer layer), which introduces a particularly uniform pressure or surface load into the substrate laminate 3. The pressing ram 6 can be formed particularly circularly and also between 0.5 mm ² and 8,000 mm ² , preferably between 0.5 mm ² and 2,000 mm ² , particularly preferably 5 mm. It can have a ram pressing area between ² and 500 mm ² .

In temporary fixing, a local force is applied to the partial surfaces to apply an equal amount of pressure for spontaneous joining, which causes the substrates 1 and 2 to be temporarily fixed (fixed or "tacked"). To. The substrates 1 and 2 are locally temporarily joined. On the partial surfaces, among other things, covalent bonds occur, which transfer the anchored substrate laminate 3 to the bonding chamber G to apply pressure over the entire surface for bonding and optionally to heat. It is strong enough to be used. Therefore, the alignment module F need only be designed for the resultant force of the partial surfaces.

The upper substrate accommodating device 4 can be transparently formed or can have additional recesses or notches for position detecting means. When the upper substrate accommodating device 4 is transparently formed, a particular component or all components are made of UV permeable material and / or IR permeable material. The light transmittance of these materials is particularly higher than 0%, preferably higher than 20%, more preferably higher than 50%, particularly preferably higher than 80%, and most preferably 95. Higher than%.

Further, the upper substrate accommodating device 4 can include an actuator for controlling the movement in the Z-axis direction. On the one hand, the actuator is used to carry the substrates 1 and 2 by the robot arm 9 and subsequently adjust the optimum distance for position adjustment. On the other hand, the actuator is used to bring the substrates 1 and 2 into contact after the alignment has been performed. In one alternative embodiment, motion in the Z-axis direction can be performed via the alignment unit 7.

The positioning means 5 may include, in particular, a microscope for detecting the positions of reference marks 1'2'with respect to the X and Y axes at at least two points. Alternatively, the position detecting means 5 can be placed below the substrate laminate 3 as part of the alignment unit 7 or next to the alignment unit 7. In one other embodiment, the position detecting means 5 is arranged next to the substrate, roughly at the level of the contact surfaces of the upper substrate 1 and the lower substrate 2. This embodiment realizes the detection of the positions of the substrates 1 and 2 through the capture of the edge portion.

The alignment unit 7 shown in FIG. 2 can convert the signal of the position detecting means 5 into a position adjusting motion with respect to the lower substrate 2. Depending on the substrate accommodating device 4 for the upper substrate 1, the substrate accommodating device 4 can be formed as an electrostatic accommodating device (English: chuck) in high vacuum or as a mechanical accommodating device. Further, in one other embodiment, the lower substrate accommodating device 8 also has sufficient pure gravity to perform alignment and contact.

The alignment unit 7 has at least three motion axes, that is, an X-axis, a Y-axis, and a Z-axis, and rotational motion is performed on the Z-axis. In one other embodiment, the Z-axis may optionally be a portion of the alignment unit 7 having the same functionality as described for the upper substrate accommodating device 4. In addition, controlled tilts about the X and Y axes can be achieved to align the substrates 1 and 2 parallel to the plane prior to the alignment process (wedge error compensation).

According to one advantageous embodiment, the position detecting means 5 detects a relative position and transmits the position to the control unit so that the position detecting means 5 accurately aligns the substrates 1 and 2. Do. As a result, the substrates 1 and 2 are aligned with each other. Alignment is done manually or preferably less than 100 μm, especially less than 10 μm, more preferably less than 1 μm, particularly preferably less than 100 nm, especially preferably less than 10 nm to some extent. It is automatically performed with a misalignment).

In the following, the process of alignment and temporary fixing (tacking) based on the embodiment using the pressing ram will be described:
1) Open the carry-in valve 14.
2) The first substrate 1 is conveyed to the substrate accommodating device 4, and the first substrate 1 is fixed to the first substrate accommodating device 4.
3) The second substrate 2 is conveyed to the substrate accommodating device 8 and the second substrate 2 is fixed to the second substrate accommodating device 8.
4) The substrates 1 and 2 are aligned in parallel via the actuator in the alignment unit 7.
5) Adjust the distance (position adjustment gap) between the substrates 1 and 2. The positioning gap is particularly less than 100 μm, especially less than 50 μm, more preferably less than 30 μm.
6) Using the position detection by the position detecting means 5 based on the reference marks 1'2', the substrates 1 and 2 are aligned via the actuator in the alignment unit 7, and preferably the second substrate 2 is aligned. Align relative to the first substrate 1. The reference marks 1'and 2'are guided so as to overlap each other or at a predetermined relative position.
7) With a slight contact force, the substrate surfaces 1o and 2o to be joined of the substrates 1 and 2 are brought into contact with each other over the entire surface. In particular, the contact force is between 0.1N and 500N, preferably between 0.5N and 100N, particularly preferably between 1N and 50N, and particularly preferably between 1N and 10N.
8) By a pressing ram 6 having a diameter between 1 mm and 100 mm, preferably between 1 mm and 50 mm, more preferably between 3 mm and 20 mm, on the partial surface, especially in the center of the partial surface. Apply force to. In particular the force is between 0.1N and 5kN, preferably between 0.5N and 1kN, more preferably between 1N and 500N, particularly preferably between 10N and 50N, and is local. Higher pressures result in local covalent bonds and also bring the substrates 1 and 2 into relative contact and fixation with each other (formation of an aligned substrate laminate 3).
9) Peel off the substrate laminate 3 from the upper substrate holder 4.
10) The board laminate 3 is carried out from the lower board holder 8 (for example, via a carry-in pin) using the robot arm 9.
11) The substrate laminate 3 is conveyed to the joining station G via the valve 14 to join the substrate laminate 3.

FIG. 3a shows a plan view of the second substrate 2 of the substrate laminate 3, where the local surface 15 pressured by the pressing ram 6 after alignment in the substrate laminate 3 is You can see it. This surface corresponds to the temporarily fixed (tacked) region 15 in the substrate laminate 3.

The transfer of the substrate laminate 3 between the position adjusting device F to which the temporary fixing is performed and the joining station G is also performed via the transfer chamber B. With the joining station G shown in FIG. 2, temporary fixing on a part of the surface can be changed to joining over the entire surface. At this time, in particular, a uniform high surface load is applied. In particular, the force is between 0.5 kN and 500 kN, preferably between 0.5 kN and 250 kN, more preferably between 0.5 kN and 200 kN, and particularly preferably between 1 kN and 100 kN. is there. In addition, the temperature can be raised. At this time, the bonding temperature is particularly preferably between 18 ° C. and 1,100 ° C., preferably between 18 ° C. and 450 ° C., more preferably between 18 ° C. and 200 ° C., particularly preferably at room temperature. is there. Despite the very high bond strength, this low temperature is achieved by the effect of pretreatment and is also considered an advantage. CMOS switching circuits should not be heated above 450 ° C, especially above 200 ° C. Special applications, such as joining two semiconductor materials (eg Si and GaAs) with very different coefficients of thermal expansion, are carried out at a particularly low temperature, preferably at room temperature, thereby the subsequent machine. Stress and strain can be avoided.

The pressing ram 11 of the joining station G is connected to the power actuator 12 and applies a uniform surface load to the substrate laminate 3. Ductile (deformable) layers can be formed, for example, flexible graphite, rubber mats and / or silicone mats to evenly disperse the surface load.

The preferred force range of the power actuator 12 is between 0.5 kN and 500 kN, preferably between 0.5 kN and 250 kN, more preferably between 0.5 kN and 200 kN, particularly preferably from 1 kN. It is up to 100 kN. The power actuator 12 may be, in particular, a pneumatic cylinder, a hydraulic cylinder, an electronic spindle drive unit or a toggle joint lever drive unit (not shown). An advantageous embodiment includes a measurement signal for adjusting the force, especially for programming and raising the force, for keeping it constant, and for later resolving it. The equipment, among other things, has sensors for force monitoring.

The temporarily fixed substrate laminate 3 is conveyed to the substrate accommodating portion 13, and is particularly conveyed via a carry-in pin (not shown). The substrate accommodating portion 13 particularly holds a carry-in pin in the holding portion in order to accommodate and mount the substrate laminate 3 in the holding portion or to lift and remove the mounted substrate laminate 3 from the holding portion. It has a pull-up mechanism provided. The substrate laminate 3 is lifted using pins present in the sample holder, thereby causing the robot grip (paddle), especially the robot grip formed as a robot arm, to be below or to the side of the substrate laminate. The substrate laminate 3 can be removed from the pin by, for example, an upward movement. The accommodation in the substrate accommodating portion 13 can be performed simply by gravity. In one advantageous embodiment, the substrate laminate 3 is fixed to the substrate housing 13 by electrostatic fixation. This electrostatic fixation can ensure that the bonded substrate laminate 3 preferably stays in the lower substrate accommodating portion 13 when the contact force is released at the end of the bonding process. As an option, the substrate housing 13 has a heating device (not shown) or a heating and / or cooling device.

The following describes a preferred process for the final joining step at the joining station G:
1) The temporarily fixed substrate laminate 3 is conveyed to the lower substrate accommodating portion 13 via the valve 14, particularly via the carry-in pin.
2) The substrate laminate 3 is fixed to the substrate accommodating portion 13 particularly via an electrostatic holding device.
3) A bonding force is applied via the power actuator 12 and the pressing ram 11.
4) Option: In particular, heat both sides symmetrically to raise the temperature.
5) Maintain the bonding force and optionally maintain the temperature (by applying the force uniformly, all microcavities between the substrate surfaces 1o and 2o are closed, thereby forming a covalent bond over the entire substrate surface. ).
6) Cool as an option.
7) Eliminate the bonding force.
8) The substrate laminate 3 is carried out from the board accommodating portion 13 particularly via a carry-in pin.
9) Using the robot arm 9 (conveyance chamber B), the joined substrate laminate 3 is conveyed via the valve 14.

In one preferred embodiment according to the present invention, the valve 14 or lockgate is a gate valve for transporting the substrates 1, 2 to the substrate laminate 3, especially an ultra-high vacuum gate valve.

The alignment accuracy of the bonded substrates after temporary fixing and after joining is particularly preferably less than 100 μm, preferably less than 10 μm, more preferably less than 5 μm, particularly preferably less than 2 μm, particularly preferably less than 1 μm, more preferably. Is <100 nm.

The bonding strength to be obtained for the final full surface bonding is preferably greater than 1 J / m ² , preferably greater than 1.5 J / m ² , and even more preferably ² J / m ^2. Greater than

The region to be actually joined does not always correspond to the entire surface of the substrates 1 and 2. As shown in FIGS. 3b and 4, the joint surface depends on the structure of the substrates 1 and 2. In the embodiment shown in FIG. 3b, the sealing frame around each structure or structural group (English: device) of the substrate laminate 3 forms the joint surface 17. This method applies to MEMS. FIG. 3b shows the joined region 16.

FIG. 4 shows a cross-sectional view taken along the cutting line HH in FIG. The cross-sectional view of the bonded substrate laminate 3 shown in FIG. 4 shows, in particular, the bonded region 16 (sealing frame), the actual bonded surface 17, and the structure 18 of the product substrates 1 and 2 (English: device). ) And the internal structural space 19 which is not joined.

Particularly advantageous joining processes for the present invention are:
-Airtightly sealed high vacuum junction (permanently seals the high vacuum in the substrate cavity).
-Conductive joint bond.
-Optically transparent joint bond.

When integrating microelectronics in three dimensions (3D), full-scale bonding, especially bonding between silicon dioxide (SiO ₂ ) surfaces, is preferred, or simultaneous copper (Cu) and SiO ₂ in so-called hybrid bonding. Joining is suitable. In this embodiment, the joint surface corresponds to the entire substrate surface.

FIG. 5a shows a plan view of the product substrate 2 on the lower side of the substrate laminate 3, where the local surface 15 pressured by the pressing ram after alignment in the substrate laminate 3 is shown. You can see it. This surface corresponds to the temporarily joined (tacked) region 15 in the substrate laminate.

FIG. 5b shows the actual joint surface 17 obtained after the entire surface has been joined.

1, 2 Substrate 1o, 2o Substrate surface 1', 2'Reference mark 3 Substrate laminate 4 First substrate accommodating part 5 Position detection means 6 Pressing ram 7 Alignment unit 8 Second substrate accommodating part 9 Robot arm 10 Conveyance chamber 11 Pressing ram 12 Power actuator 13 Board housing 14 (carry-in) valve 15 Temporarily fixed (tacked) area 16 Joined area 17 Joined surface 18 Structure 19 Internal structural space 20 Working space a Vacuum is substantially Transfer step that does not change b Transfer from ambient pressure or transfer to ambient pressure c Force vector d Joined surface k High vacuum environment A Lock B Transfer chamber C Pre-positioning device D Pre-processing station E Reversing station F Temporary fixing device Alignment module G junction station M Substrate or center of substrate laminate

Claims (12)

In a method for temporarily fixing the substrate (1, 2), which pretreats at least one surface region of the at least one substrate surface (1o, 2o) of the substrate (1, 2).
The aligned substrate (1, 2), subsequently, by contacting the pre-treated the surface area, the local energy supply by the laser, temporarily fixed by running in a few several points or partial areas The temporarily fixed substrate (1, 2) is conveyed by using a robot arm and without using an accommodating device on which the temporarily fixed substrate (1, 2) is placed. And how. The alignment and the temporary fixing are performed in the first module chamber.
The method according to claim 1. The alignment is performed with an alignment accuracy of less than 100 μm.
The method according to claim 1 or 2. The temporary fixation has a binding stability between 0.01 J / m ² and 5 J / m ² .
The method according to any one of claims 1 to 3. At least one substrate surface (1o, 2o) of the substrate surfaces (1o, 2o) has an average roughness value Ra of less than 20 nm.
The method according to any one of claims 1 to 4 . Temporarily fix the substrates (1, 2) only to the pretreated surface area.
The method according to any one of claims 1 to 5 . The method according to any one of claims 1 to 6 , wherein heat is locally applied to the contact surface for the temporary fixing. A laser is used for the temporary fixation, and the coherent laser beam is focused by an optical system, whereby the local bonding layer is heated.
The method according to any one of claims 1 to 7 . A method for permanently joining a substrate (1, 2) temporarily fixed according to the method according to any one of claims 1 to 8 to the substrate surface (1o, 2o). The joining is performed in the second module chamber.
The method according to claim 9 . In the device for temporarily fixing the substrate (1, 2),
-With at least one pretreatment apparatus for pretreating at least one surface region of at least one substrate surface (1o, 2o) of the substrate (1, 2).
-An alignment device for aligning the substrates (1, 2) and
− Provided with a temporary fixing device connected to a subsequent stage of the alignment device for contacting and temporarily fixing the aligned substrates (1, 2) to the pretreated surface region .
The temporary fixing device temporarily fixes by executing local energy supply by a laser at a few points or partial surfaces, and transfers the temporarily fixed substrate (1, 2) to a robot arm. It is characterized in that it is used and is performed without using an accommodating device on which the temporarily fixed substrate (1, 2) is placed .
apparatus. The temporary fixing is performed in a separate temporary fixing module.
The device according to claim 11 .

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