JP6798952B2 - Manufacturing method of semiconductor device, light emitting device and semiconductor device - Google Patents

Description

The present invention is a semiconductor device having a thin film transistor (TFT) composed of a semiconductor layer, and light emission configured by mounting a light emitting element such as a light emitting diode (LED) on the semiconductor device. It relates to a device and a method of manufacturing a semiconductor device.

Conventionally, as a kind of light emitting device, a self-luminous display device having a plurality of light emitting elements such as LEDs and which does not require a backlight device is known. A block circuit diagram of the basic configuration of such a display device is shown in FIG. 5 (a). Further, a bottom view of the display device having the configuration of FIG. 5 (a) is shown in FIG. 5 (b), and a cross-sectional view taken along line A1-A2 of FIG. 5 (a) is shown in FIG. 6 (a). The circuit diagram of one light emitting element 14 and the light emitting control unit in) is shown in FIG. 6 (b). The display device has an insulating substrate 1 made of a glass substrate or the like, a scanning signal line 2 arranged in a predetermined direction (for example, a row direction) on the insulating substrate 1, and a predetermined direction intersecting the scanning signal line 2. A display unit 11 composed of a plurality of light emission control signal lines 3 arranged in intersecting directions (for example, column directions), and a plurality of pixel units (Pmn) separated by scanning signal lines 2 and light emission control signal lines 3. It has a configuration having a plurality of light emitting regions (Lmn) arranged on an insulating layer covering the display unit 11. The scanning signal line 2 and the light emission control signal line 3 are connected to the back surface wiring 9 on the back surface of the insulating substrate 1 via the side surface wiring 1s arranged on the side surface of the insulating substrate 1. The back surface wiring 9 is connected to a drive element 6 such as an IC or LSI installed on the back surface of the insulating substrate 1. That is, the display of the display device is driven and controlled by the drive element 6 on the back surface of the insulating substrate 1. The drive element 6 is mounted on the back surface side of the insulating substrate 1 by means such as a COG (Chip On Glass) method. Further, on the back surface side of the insulating substrate 1, an FPC for inputting / outputting a drive signal, a control signal, or the like to / from the drive element 6 via a lead wire may be installed. Further, a through conductor such as a through hole may be used instead of the side wiring 1s.

Each pixel unit 15 (Pmn) is provided with a light emission control unit 22 for controlling light emission, non-light emission, light emission intensity, etc. of the light emitting element 14 (LDmn) in the light emitting region (Lmn). The light emission control unit 22 includes a thin film transistor (TFT) 12 (shown in FIG. 6B) as a switch element for inputting a light emission signal to each of the light emission elements 14, and a light emission control signal (light emission control). Light emitting element from the potential difference (light emitting signal) between positive voltage (anode voltage: about 3 to 5V) and negative voltage (cathode voltage: about -3V to 0V) according to the level (voltage) of the signal line 3). A TFT 13 (shown in FIG. 6B) as a driving element for driving the 14 with a current is included. A capacitive element 43 (shown in FIG. 6B) is arranged on a connecting line connecting the gate electrode and the source electrode of the TFT 13, and the capacitive element 43 is the voltage of the light emission control signal input to the gate electrode of the TFT 13. Functions as a holding capacity for holding the period until the next rewriting (a period of one frame).

The light emitting element 14 has a light emitting control unit 22, a positive voltage input line 16, and a negative voltage through through conductors 23a and 23b such as through holes that penetrate the insulating layer 31 (shown in FIG. 6A) that covers the display unit 11. It is electrically connected to the voltage input line 17. That is, the positive electrode of the light emitting element 14 is connected to the positive voltage input line 16 via the through conductor 23a and the light emission control unit 22, and the negative electrode of the light emitting element 14 is connected to the negative voltage input line via the through conductor 23b. It is connected to 17. Further, the display device has a frame portion 1g between the display portion 11 and the end 1t of the insulating substrate 1 in a plan view.

The pixel unit 15 may be composed of a sub-pixel unit for red light emission, a sub-pixel unit for green light emission, and a sub-pixel unit for blue light emission, respectively. The sub-pixel part for red light emission has a red light emitting element composed of a red LED or the like, the sub pixel part for green light emission has a green light emitting element composed of a green LED or the like, and the sub pixel part for blue light emission has a blue LED. It has a blue light emitting element made of such as. For example, these sub-pixel portions are arranged in the row direction or the column direction.

7 (a) and 7 (b) are block circuit diagrams showing a configuration in which through conductors 16k and 17k are connected to the positive voltage input line 16 and the negative voltage input line 17, respectively. FIG. 7A shows a configuration in which the through conductors 16k and 17k are arranged in the frame portion 1g, and FIG. 7B shows a configuration in which the through conductors 16k and 17k are arranged in the display unit 11. There is. Since these through conductors 16k and 17k have lower resistance than the side wiring 1s, they are provided for the purpose of reducing the voltage drop of the power supply voltage in the positive voltage input line 16 and the negative voltage input line 17. When the through conductors 16k and 17k are arranged on the display unit 11, the voltage drop of the power supply voltage on the positive voltage input line 16 and the negative voltage input line 17 can be made smaller. The through conductors 16k and 17k are connected to the back surface wiring 9 of the insulating substrate 1, and further, the circuit wiring of the flexible printed circuit board (FPC) connected to the driving element 6, another driving element, or an external device. Etc., are electrically connected.

FIG. 8 is a cross-sectional view taken along the line B1-B2 of FIG. 7 (b), which is a cross-sectional view showing the portions of the TFT 13 and the light emitting element 14. As shown in FIG. 8, the insulating substrate 1 has a through conductor 16k, a plurality of insulating layers 31 are arranged on the insulating substrate 1, and the through conductor 16k is electrically connected between the layers of the plurality of insulating layers 31. There is a TFT 13 connected to. The conductor constituting the through conductor 16k is made of a metal such as Cu, Ni, Cr, Al, Ag, Mo or an alloy containing one or more of them. In the plurality of insulating layers 31, the first insulating layer 31a, the second insulating layer 31b, the third insulating layer 31c, and the fourth insulating layer 31d are laminated in this order from the insulating substrate 1 side, and the first insulating layer 31a and the second insulating layer 31a are laminated. The insulating layer 31b and the third insulating layer 31c are made of silicon oxide (SiO ₂ ), silicon nitride (SiN _x ), etc., respectively, and the fourth insulating layer 31d is made of acrylic resin, polycarbonate, etc. The through-conductor 16k is connected to a positive voltage input line 16 composed of a Mo layer / Al layer / Mo layer (indicating a laminated structure in which an Al layer and a Mo layer are sequentially laminated on the Mo layer) on the insulating substrate 1. The positive voltage input line 16 is connected to the source electrode 13s of the TFT 13 via a through hole 52.

The gate electrode 13g of the TFT 13 is arranged between the first insulating layer 31a and the second insulating layer 31b, and the semiconductor layer 13a of the TFT 13 is arranged between the second insulating layer 32b and the third insulating layer 31c. The source electrode 13s and the drain electrode 13d of the TFT 13 are arranged between the third insulating layer 32c and the fourth insulating layer 31d. The source electrode 13s is connected to the semiconductor layer 13a via a through hole 53, the drain electrode 13d is connected to the semiconductor layer 13a via a through hole 54, and the drain electrode 13d is connected to the electrode layer 42a constituting the positive electrode 44a. It is connected via a through hole 55.

The light emitting element 14 is electrically connected to the positive electrode 44a and the negative electrode 44b arranged on the insulating layer 31 via a conductive connecting member such as solder, and mounted on the insulating layer 31. The positive electrode 44a is composed of an electrode layer 42a made of a Mo layer / Al layer / Mo layer or the like, and a transparent electrode 43a made of indium tin oxide (ITO) or the like covering the electrode layer 42a. The negative electrode 44b has the same configuration, and is composed of an electrode layer 42b made of a Mo layer / Al layer / Mo layer or the like, and a transparent electrode 43b made of ITO or the like covering the electrode layer 42b. An insulating layer 45 is arranged so as to cover the insulating layer 31 and a part of each of the transparent electrodes 43a and 43b (the portion where the light emitting element 14 does not overlap), and the insulating layer 45 is silicon oxide (SiO ₂ ). , Silicon nitride (SiN _x ), etc. (see, for example, Patent Document 1).

JP-A-2017-9725

However, the conventional display device having the configuration shown in FIG. 8 has the following problems. The conductor constituting the through conductor 16k is often made of Cu in terms of high conductivity, and there is a problem that Cu becomes a pollutant with respect to the semiconductor layer 13a of the TFT 13. Further, a large current such as a power supply current is often passed through the through conductor 16k, and in that case, a current concentration occurs in the through conductor 16k and the through conductor 16k generates heat, and as a result, a portion of the insulating layer 31 overlapping the through conductor 16k. There are problems that cracks occur in the conductor and that the connection between the through conductor 16k and the positive voltage input line 16 is broken. Further, by providing the through conductor 16k on the insulating substrate 1, the voltage drop of the signal in the wiring such as the power supply wiring connected to the through conductor 16k can be reduced, but the light emitting device in which a large number of light emitting elements 14 are arranged is arranged. In the above case, since the length of the wiring becomes long, there is a problem that it becomes difficult to reduce the voltage drop of the signal. Further, since a TFT or the like is generally formed on an insulating substrate 1 on which a through conductor is formed, the position and size of the through conductor vary, the accuracy is poor, and the position shift due to the miniaturization of the TFT occurs, resulting in a high-density semiconductor. There was a problem that it was difficult to realize the device.

The present invention has been completed in view of the above problems, and an object of the present invention is to generate a crack in a portion of an insulating layer overlapping the through conductor due to heat generation of the through conductor, or to generate a through conductor and wiring connected to the through conductor. It is an object of the present invention to provide a semiconductor device and a light emitting device capable of effectively suppressing the occurrence of disconnection in the connection portion with the device. It is also an object of the present invention to provide a semiconductor device and a light emitting device capable of reducing the voltage drop of a signal in the wiring connected to the through conductor. Further, by forming a through conductor having inferior accuracy after forming a high-density TFT, it is possible to realize a high-density semiconductor device as a result. Further, it is possible to prevent the conductor constituting the through conductor from contaminating the semiconductor layer of the TFT, and it is possible to suppress the occurrence of the above-mentioned problems due to the heat generation of the through conductor. As a result, the semiconductor device has high reliability and long life. It is to provide the manufacturing method of the semiconductor device which can manufacture.

The semiconductor device of the present invention is arranged between an insulating substrate, a penetrating conductor penetrating the insulating substrate, a plurality of insulating layers arranged on the insulating substrate, and the penetrating conductors arranged between the plurality of insulating layers. A semiconductor device having a thin film electrically connected to the above, wherein a through hole is arranged at a portion of the plurality of insulating layers overlapping the through conductor, and the opening of the through hole is formed. The diameter is larger than the diameter of the through conductor, and the through conductor is located inside the opening of the through hole.

In the semiconductor device of the present invention, preferably, a plurality of the through conductors are evenly arranged on the insulating substrate.

Further, in the semiconductor device of the present invention, preferably, a plurality of the through conductors are arranged on the insulating substrate, and they include those having different distances from the ends of the insulating substrate, and the ends of the insulating substrate. The area of the penetrating conductor closest to is larger than the area of the other penetrating conductor in plan view.

Further, in the semiconductor device of the present invention, the current flowing through the through conductor closest to the edge of the insulating substrate is preferably larger than the current flowing through the other through conductors.

Further, in the semiconductor device of the present invention, preferably, the insulating substrate has a side conductor arranged on a side surface, and the through conductor is electrically connected to the side conductor.

Further, in the semiconductor device of the present invention, preferably, the insulating substrate is provided with side wiring that is electrically independent of the side conductor on the side surface.

The light emitting device of the present invention is a light emitting device having the semiconductor device having the configuration of the present invention, in which electrodes electrically connected to the thin film transistor are arranged on the plurality of insulating layers, and the electrodes are provided. It is configured to have a connected light emitting element.

In the method for manufacturing a semiconductor device of the present invention, the plurality of insulating layers are laminated on the insulating substrate, the thin film is formed between the layers, and then the through holes penetrating the plurality of insulating layers are formed. Next, a hole penetrating the insulating substrate is formed in a portion of the insulating substrate exposed inside the opening of the through hole, and a conductor column is arranged in the hole to form the penetrating conductor. Is.

In the method for manufacturing a semiconductor device of the present invention, preferably, the through hole is formed by an etching method, and the hole penetrating the insulating substrate is formed by a laser light irradiation method.

Further, in the method for manufacturing a semiconductor device of the present invention, the conductor column is preferably a copper column.

Further, in the method for manufacturing a semiconductor device of the present invention, preferably, the through hole has a diameter on the opposite side of the diameter on the side of the through conductor.

The semiconductor device of the present invention is arranged between an insulating substrate, a penetrating conductor penetrating the insulating substrate, a plurality of insulating layers arranged on the insulating substrate, and the penetrating conductors arranged between the plurality of insulating layers. A semiconductor device having a thin film electrically connected to the above, wherein a through hole is arranged at a portion of the plurality of insulating layers overlapping the through conductor, and the opening of the through hole is formed. Since the diameter is larger than the diameter of the through conductor and the through conductor is located inside the opening of the through hole, the following effects are obtained. Since the through holes are arranged in the portions of the plurality of insulating layers that overlap with the through conductors, the heat dissipation of the through conductors is improved.
Even if a large current such as a power supply current is passed through the through conductor, the heat generated by the through conductor may cause cracks in the part of the insulating layer that overlaps the through conductor, or the connection between the through conductor and the wiring connected to it may be broken. It can be effectively suppressed from occurring.

In the semiconductor device of the present invention, when a plurality of the through conductors are evenly arranged on the insulating substrate, heat concentration due to heat generation of the plurality of through conductors on the insulating substrate can be suppressed. As a result, it is possible to more effectively suppress the occurrence of cracks in the portion of the insulating layer and the occurrence of disconnection in the connection portion between the through conductor and the wiring connected to the through conductor. Further, by arranging a plurality of through conductors evenly, it is possible to make the voltage drop in the plane of the insulating substrate minimum and uniform, and the light emitting device does not have uneven emission brightness due to the voltage drop. Etc. can be realized.

Further, in the semiconductor device of the present invention, a plurality of the through conductors are arranged on the insulating substrate, and they include those having different distances from the end of the insulating substrate, and are closest to the end of the insulating substrate. When the area of the through conductor in the plan view is larger than the area of the other through conductor in the plan view, the resistance of the through conductor closest to the edge of the insulating substrate should be smaller than the resistance of the other through conductor. Can be done. Therefore, even if a large current such as a power supply current is passed through the through conductors, the variation in the voltage drop in the wiring connected to the through conductors can be reduced. In addition, the variation in heat dissipation of those through conductors can be reduced. It is possible to more effectively suppress the occurrence of the above-mentioned problems due to the heat generated by the through conductor.

Further, in the semiconductor device of the present invention, when the current flowing through the through conductor closest to the edge of the insulating substrate is larger than the current flowing through the other through conductor, the resistance of the through conductor closest to the edge of the insulating substrate is increased. Since the resistance is smaller than that of the other through-conductors, a large current such as a power supply current can be passed through the through-conductor closest to the edge of the insulating substrate.

Further, in the semiconductor device of the present invention, the insulating substrate has side conductors arranged on the side surface, and when the through conductor is electrically connected to the side conductor, the through conductor and the side conductor Since the current is distributed to each, the current flowing through the through conductor becomes small. As a result, it is possible to more effectively suppress the occurrence of the above-mentioned problems due to the heat generation of the through conductor. Further, when there are a plurality of through conductors, it is possible to reduce the variation in the voltage drop of the signal in the wiring connected to the through conductors. In addition, the variation in heat dissipation of those through conductors can be reduced. In addition, it is generally difficult to reduce the resistance of side conductors compared to through conductors, and there was concern about deterioration of reliability such as migration when a large current was applied. However, by making redundant connections with through conductors, the reliability of side conductors is high. It becomes possible to change.

Further, in the semiconductor device of the present invention, when the insulating substrate has side wiring electrically independent of the side conductor on the side surface, a scanning signal or the like input to the gate electrode of the thin film transistor is transmitted via the side wiring. Therefore, it is possible to suppress an increase in the number of through conductors. In addition, by connecting a large current not only with the side wiring but also with a through conductor, it is not necessary to form a large area side conductor for a large current, and the side wiring area can be reduced or the number of sides to be formed can be reduced. It greatly contributes to narrowing the frame, such as being able to do it. Further, it is possible to more effectively suppress the occurrence of the above-mentioned problems due to the heat generation of the through conductor.

The light emitting device of the present invention is a light emitting device having the semiconductor device having the configuration of the present invention, in which electrodes electrically connected to the thin film transistor are arranged on the plurality of insulating layers, and the electrodes are provided. Since the structure has the connected light emitting elements, the occurrence of the above-mentioned problems due to the heat generation of the through conductor can be effectively suppressed, and as a result, the light emitting device has high reliability and long life.

In the method for manufacturing a semiconductor device of the present invention, the plurality of insulating layers are laminated on the insulating substrate, the thin film is formed between the layers, and then the through holes penetrating the plurality of insulating layers are formed. Next, a hole penetrating the insulating substrate is formed in a portion of the insulating substrate exposed inside the opening of the through hole, and a conductor column is arranged in the hole to form the penetrating conductor. Therefore, the following effects are obtained. Since the through conductor can be formed after the thin film transistor is formed, it is possible to prevent the conductor constituting the through conductor from contaminating the semiconductor layer of the TFT. Further, as a result of suppressing the occurrence of the above-mentioned problems due to the heat generation of the through conductor, a highly reliable and long-life semiconductor device can be manufactured. Further, by forming the TFT on the insulating substrate with high density and high accuracy and then forming the through conductor having inferior position accuracy and size accuracy on the insulating substrate, it is easy to connect the TFT and the through conductor via the wiring. As a result, it becomes possible to realize a high-density semiconductor device.

In the method for manufacturing a semiconductor device of the present invention, when the through hole is formed by an etching method and the hole penetrating the insulating substrate is formed by a laser beam irradiation method, the position and size of the hole penetrating the insulating substrate are accurately determined. Can be formed as an object. As a result, it becomes easy to form a through conductor having excellent heat dissipation.

Further, in the method for manufacturing a semiconductor device of the present invention, when the conductor column is a copper column, a through conductor having high conductivity can be formed. Therefore, it is possible to further suppress the occurrence of the above-mentioned problems due to the heat generation of the through conductor, and it is possible to suppress the copper constituting the through conductor from contaminating the semiconductor layer of the TFT, and it is possible to manufacture a semiconductor device having a long life. ..

Further, in the method for manufacturing a semiconductor device of the present invention, when the through hole has a diameter on the opposite side of the diameter on the side of the through conductor, the heat dissipation of the through conductor is improved. As a result, it is possible to further suppress the occurrence of the above-mentioned problems due to the heat generation of the through conductor.

FIG. 1 is a diagram showing an example of an embodiment of a light emitting device having the semiconductor device of the present invention, which is a cross-sectional view taken along the line C1-C2 of FIG. 3A, showing a portion of a thin film transistor and a light emitting device. It is a perspective sectional view. 2 (a) and 2 (b) are views showing another example of the embodiment of the light emitting device of the present invention, respectively, and are cross-sectional views showing the same parts as in FIG. 3A and 3B are diagrams showing other examples of the embodiment of the light emitting device of the present invention, respectively, and are block circuit diagrams of the light emitting device. 4 (a) and 4 (b) are diagrams showing other examples of the embodiment of the light emitting device of the present invention, respectively, and are block circuit diagrams of the light emitting device. 5 (a) and 5 (b) are diagrams showing an example of a conventional light emitting device, respectively, (a) is a block circuit diagram of the light emitting device, and (b) is a bottom view of the light emitting device of (a). .. 6 (a) is a cross-sectional view taken along the line A1-A2 of FIG. 5 (a), and FIG. 6 (b) is a circuit diagram of one light emitting element in FIG. 5 (a) and a light emitting control unit connected thereto. 7 (a) and 7 (b) are diagrams showing an example of a conventional light emitting device, respectively, and are block circuit diagrams of the light emitting device. FIG. 8 is a cross-sectional view taken along the line B1-B2 of FIG. 7B, which is a cross-sectional view of the thin film transistor and the light emitting element.

Hereinafter, embodiments of the semiconductor device, the light emitting device, and the method for manufacturing the semiconductor device of the present invention will be described with reference to the drawings. However, each figure referred to below shows a main part for explaining the semiconductor device and the light emitting device among the constituent members in the embodiment of the semiconductor device and the light emitting device of the present invention. Therefore, the semiconductor device and the light emitting device according to the present invention may include well-known components such as wiring conductors, control ICs, and LSIs (not shown in the figure). In FIGS. 1 to 4 showing embodiments of the semiconductor device, the light emitting device, and the method for manufacturing the semiconductor device of the present invention, the same parts as those in FIGS. 5 to 8 are designated by the same reference numerals, and details thereof are given. I will omit the explanation.

The semiconductor device of the present invention can constitute various electronic devices by mounting various electronic elements connected to the TFT and whose operation is controlled. Examples of the electronic element include a light emitting element such as an LED, an organic EL element, an inorganic EL element, and a Micro Electro Mechanical Systems element. 1 to 4 are diagrams showing various examples of embodiments of a light emitting device using the semiconductor device of the present invention, and the semiconductor device and the light emitting device for the light emitting device will be described below.

As shown in FIG. 1, the semiconductor device of the present invention includes an insulating substrate 1 made of a glass substrate or the like, a through conductor 16k1 penetrating the insulating substrate 1, and a plurality of insulating layers 31 arranged on the insulating substrate 1. A semiconductor device having a TFT 13 arranged between layers of a plurality of insulating layers 31 and electrically connected to a penetrating conductor 16k1 at a portion overlapping the penetrating conductor 16k1 in the plurality of insulating layers 31. , The through hole 60 is arranged, the diameter of the opening of the through hole 60 is larger than the diameter of the through conductor 16k1, and the through conductor 16k1 is located inside the opening of the through hole 60. With this configuration, the heat dissipation of the through conductor 16k1 is improved, and even if a large current such as a power supply current (about several μA to several tens of μA) is passed through the through conductor 16k1, the insulation that overlaps with the through conductor 16k1 due to the heat generated by the through conductor 16k1. It is possible to effectively suppress the occurrence of cracks in the portion of the layer 31 and the occurrence of disconnection in the connection portion between the through conductor 16k1 and the positive voltage input line 16 connected to the through conductor 16k1.

In the semiconductor device of the present invention, the insulating substrate 1 is an electrically insulating substrate such as a glass substrate, a plastic substrate, or a ceramic substrate, but a substrate having high heat dissipation such as a metal substrate is added to the insulating substrate. You may be. Further, the insulating substrate 1 may be a transparent glass substrate, but may be an opaque one. When the insulating substrate 1 is opaque, the insulating substrate 1 may be a colored glass substrate, a glass substrate made of frosted glass, a plastic substrate, a ceramic substrate, or a composite substrate in which these substrates are laminated.

The diameter of the through conductor 16k1 and the diameter of the through hole 60 mean the diameter in the cross section in the case of the cylindrical through conductor 16k1 and the cylindrical through hole 60. When the through conductor 16k1 has an elliptical columnar shape and the through hole 60 has an elliptical cylinder shape, it is the major axis (maximum diameter) or the average diameter in the cross section. When the through conductor 16k1 is a columnar shape such as another square columnar shape and the through hole 60 is a tubular shape such as another square tubular shape, it is the maximum width or the average width in the cross section. In any case, the through conductor 16k1 is located inside the opening of the through hole 60 in a plan view.

The diameter of the through hole 60 is located about 10 μm to 50 μm outside the diameter of the through conductor 16k1, and for example, the diameter of the through conductor 16k1 is about 10 μm to 500 μm for the cylindrical through conductor 16k1. is there. The diameter of the through hole 60 is a diameter of about 30 μm to 600 μm in the case of the cylindrical through hole 60.

The through hole 60 preferably has a diameter on the opposite side (diameter on the upper end side in FIG. 1) larger than the diameter on the side of the through conductor 16k1 (diameter on the lower end side in FIG. 1). In this case, since the through hole 60 is configured to be wide open toward the upper side, the heat generated by the through conductor 16k1 is easily dissipated into the space, and the heat dissipation of the through conductor 16k1 is improved. As a result, it is possible to further suppress the occurrence of the above-mentioned problems due to the heat generated by the through conductor 16k1. FIG. 2A shows a configuration in which the diameter on the opposite side of the through conductor 16k1 is increased in stages when the diameter on the opposite side is increased. In this case, the heat generated by the through conductor 16k1 is easily dissipated by the space, and the heat dissipation of the through conductor 16k1 is further improved. The ratio of the diameter on the upper end side to the diameter on the lower end side of the through hole 60 may be, for example, about 1.1 times to 2 times. Further, a protective film or a decorative film having better thermal conductivity and heat dissipation than a transparent insulating film such as a black insulating film may be provided in the recess forming the space above the through conductor 16k1.

FIG. 2B shows that the diameter of the through conductor 16k1 on the first main surface (light emitting element mounting main surface) side of the insulating substrate 1 is opposite to the second main surface (light emitting element mounting main surface) of the insulating substrate 1. It shows a suitable configuration that is smaller than the diameter on the main surface) side. That is, the diameter of the through conductor 16k1 on the second main surface side (lower end side) is larger than the diameter on the first main surface side (upper end side). In this case, the heat generated by the through conductor 16k1 is likely to be dissipated to the side of the second main surface of the insulating substrate 1, and the influence of the heat on the insulating layer 31 can be reduced. Therefore, it is possible to further suppress the occurrence of the above-mentioned problems due to the heat generated by the through conductor 16k1.

FIG. 3A shows a configuration in which a plurality of through conductors 16k1 to 16kn and 17k1 to 17kn are arranged on the display unit 11. In this case, it is preferable that each of the plurality of through conductors 16k1 to 16kn and 17k1 to 17kn is connected to the central portion of the positive voltage input line 16 and the negative voltage input line 17, which are the wirings to which they are connected. In the case of this configuration, the voltage drop in the positive voltage input line 16 and the negative voltage input line 17 becomes smaller. The central portion of the positive voltage input line 16 and the negative voltage input line 17 is, for example, in the range of -15% to + 15% from the center of the line, that is, the range of about 30% including the center of the line. Is.

FIG. 3B shows a suitable configuration in which a plurality of through conductors 16k1 to 16kn and 17k1 to 17kn are arranged on the display unit 11 and the intervals between the adjacent conductors are substantially the same. In this case, it is possible to prevent the heat generated by the plurality of through conductors 16k1 to 16kn and 17k1 to 17kn from being locally concentrated in the insulating substrate 1. The spacing between the adjacent conductors 16k1 to 16kn and 17k1 to 17kn need not be exactly the same, and the ratio of the spacing can be adjusted within the range of about 1 to 1.5 times. If it is out of the range, local heat concentration tends to easily occur on the insulating substrate 1.

In the semiconductor device of the present invention, it is preferable that a plurality of through conductors are evenly arranged on the insulating substrate 1. In this case, the resistance distribution and the voltage drop in the insulating substrate 1 become uniform, and the heat concentration due to the heat generation of the plurality of through conductors in the insulating substrate 1 can be suppressed. As a result, it is possible to more effectively suppress the occurrence of cracks in the portion of the insulating layer 31 and the occurrence of disconnection in the connection portion between the through conductor and the wiring connected to the through conductor. The configuration in which the plurality of through conductors are evenly arranged on the insulating substrate 1 is such that the heat distribution of the insulating substrate 1 becomes even when the plurality of through conductors generate heat. For example, when the main surface of the rectangular insulating substrate 1 is divided in a matrix with an even area, the number of through conductors and the number of divided parts are set to be the same. Then, a through conductor is arranged at the center of each of the divided portions. In FIG. 3, a through conductor is provided for each input line, but a plurality of through conductors may be bundled and a through conductor may be provided for each bundled line. It is preferable that the through conductors are evenly arranged including the vertical staggered arrangement.

In FIG. 4A, a plurality of through conductors are arranged on the insulating substrate 1, and the through conductors 16k1 to 16kn and 17k1 to 17kn include those having different distances from the end 1t of the insulating substrate 1. The area of the penetrating conductors 16k1 to 16kn closest to the end 1t of the insulating substrate 1 in plan view is larger than the area of each of the other penetrating conductors 17k1 to 17kn in plan view, indicating a suitable configuration. is there. In this case, the resistance of the through conductors 16k1 to 16kn closest to the end 1t of the insulating substrate 1 can be made smaller than the resistance of the other through conductors 17k1 to 17kn. Therefore, even if a large current such as a power supply current is passed through the through conductors 16k1 to 16kn and 17k1 to 17kn, the positive voltage input line 16 and the negative voltage input line 17 connected to the through conductors 16k1 to 16kn and 17k1 to 17kn are connected. It is possible to reduce the variation of the voltage drop in. That is, although the through conductors 16k1 to 16kn are connected at the end of the positive voltage input line 16, the voltage drop of the signal on the positive voltage input line 16 can be reduced because the resistance of the through conductors 16k1 to 16kn is small. it can. Therefore, the voltage drop of the signal on the negative voltage input line 17 and the voltage drop of the signal on the positive voltage input line 16 can be made about the same. Further, the variation in heat dissipation of the penetrating conductors 16k1 to 16kn and 17k1 to 17kn can be reduced. Therefore, it is possible to more effectively suppress the occurrence of the above-mentioned problems due to heat generation of the penetrating conductors 16k1 to 16kn and 17k1 to 17kn.

The ratio of each area of the penetrating conductors 16k1 to 16kn in a plan view and each area of the other penetrating conductors 17k1 to 17kn in a plan view can be adjusted within a range of about 1.1 times to 5 times. it can. If it is less than 1.1 times, it tends to be difficult to obtain the effect of reducing the variation in the voltage drop and the effect of reducing the variation in heat dissipation. If it exceeds 5 times, it tends to be difficult to obtain a space for arranging the through conductors 16k1 to 16kn. Preferably, it can be adjusted within the range of about 1.5 times to 3 times.

In the configuration of FIG. 4A, it is preferable that the current flowing through the through conductors 16k1 to 16kn closest to the end 1t of the insulating substrate 1 is larger than the current flowing through the other through conductors 17k1 to 17kn. In this case, since the resistance of the penetrating conductor 16k1 to 16kn closest to the end 1t of the insulating substrate 1 is smaller than the resistance of the other penetrating conductors 17k1 to 17kn, the penetrating conductor 16k1 closest to the end 1t of the insulating substrate 1 is made smaller. A large current such as a power supply current can be passed through ~ 16 kn.

In FIG. 4B, the insulating substrate 1 has side conductors 16s1 to 16sn and 17s1 to 17sn arranged on the side surface, and the through conductors 16k1 to 16kn and 17k1 to 17kn are side conductors 16s1 to 16sn, respectively. , 17s1 to 17sn, respectively, which are electrically connected to each other, and show a suitable configuration. In this case, when looking at the through conductor 16k1 and the side conductor 16s1, the current is distributed to each of the through conductor 16k1 and the side conductor 16s1, so that the current flowing through the through conductor 16k1 becomes small. As a result, it is possible to more effectively suppress the occurrence of the above-mentioned problems due to the heat generated by the through conductor 16k1. Further, when there are a plurality of through conductors 16k1 to 16kn and 17k1 to 17kn, the voltage drop of the signal at each of the positive voltage input line 16 and the negative voltage input line 17 connected to the through conductors 16k1 to 16kn and 17k1 to 17kn. The variation can be reduced. Further, the variation in heat dissipation of the penetrating conductors 16k1 to 16kn and 17k1 to 17kn can be reduced.

The side conductors 16s1 to 16sn and 17s1 to 17sn are formed by forming a conductor layer on a predetermined portion of the side surface of the insulating substrate 1 by a thin film forming method such as a plating method, a vapor deposition method, or a CVD method. Alternatively, the side conductors 16s1 to 16sn and 17s1 to 17sn each form grooves on the side surfaces of the insulating substrate 1 by an etching method or the like, and then thin films such as a plating method, a vapor deposition method, or a CVD method are formed in the grooves. It is formed by a method of forming a conductor layer by a method or the like. Alternatively, the side conductors 16s1 to 16sn and 17s1 to 17sn are conductors obtained by applying a conductor paste containing conductive particles such as silver (Ag), a resin component, alcohol, etc. to a predetermined portion on the side surface of the insulating substrate 1, and firing the conductors. It is formed by a thick film forming method for producing a layer or the like. Alternatively, the side conductors 16s1 to 16sn and 17s1 to 17sn each form grooves on the side surfaces of the insulating substrate 1 by an etching method or the like, and then a conductor paste is applied to the grooves and fired to prepare a conductor layer. It is formed by a thick film forming method or the like.

The side conductors 16s1 to 16sn and 17s1 to 17sn are made of a conductor material such as silver (Ag), copper (Cu), aluminum (Al), and molybdenum (Mo). Further, the widths of the side conductors 16s1 to 16sn and 17s1 to 17sn are each about 10 μm to 1000 μm.

Further, in the semiconductor device of the present invention, it is preferable that the insulating substrate 1 is provided with side wiring 1s that is electrically independent of the side conductors 16s1 to 16sn and 17s1 to 17sn on the side surface. In this case, since the scanning signal or the like input to the gate electrode of the TFT 13 can be supplied via the side wiring 1s, it is possible to suppress an increase in the number of through conductors 16k1 to 16kn and 17k1 to 17kn. As a result, it is possible to more effectively suppress the occurrence of the above-mentioned problems due to heat generation of the through conductors 16k1 to 16kn and 17k1 to 17kn. Of course, the light emission control signal input to the drain electrode of the TFT 13 can also be supplied via the side wiring 1s. The side wiring 1s can be formed by the same forming method as the side conductors 16s1 to 16sn and 17s1 to 17sn described above.

As shown in FIGS. 1 and 2, the light emitting device of the present invention is a light emitting device having the semiconductor device having the configuration of the present invention, and is electrically connected to the TFT 13 on a plurality of insulating layers 31. A positive electrode 44a and a negative electrode 44b are arranged, and a light emitting element 14 in which an anode electrode and a cathode electrode are connected to the positive electrode 44a and the negative electrode 44b is provided. With this configuration, the occurrence of the above-mentioned problems due to the heat generated by the through conductor 16k1 can be effectively suppressed, and as a result, a highly reliable and long-life light emitting device is obtained.

In the light emitting device of the present invention, as the light emitting element 14, any self-luminous element such as a microchip type light emitting diode (LED), a monolithic type light emitting diode, an organic EL, an inorganic EL, or a semiconductor laser element is adopted. obtain.

The light emitting device of the present invention can be applied to a display device or the like. The display device to which the light emitting device of the present invention is applied has a configuration in which a plurality of light emitting elements 14 having different light emitting wavelengths (emission colors) are arranged in one pixel unit 15, and a light emitting control unit connected to each of them is provided. There may be. For example, a red light emitting element composed of a red LED (RLED) or the like, a green light emitting element composed of a green LED (GLED) or the like, and a blue light emitting element composed of a blue LED (BLED) or the like are arranged in one pixel unit 15. There may be a configuration in which there are light emission control units (R driver, G driver, B driver) connected to each. In this case, for example, the RLED, GLED, and BLED are arranged at the center of the pixel portion 15 so as to be collectively located at each vertex of the equilateral triangle, and the R driver, the G driver, and the B driver are the RLED and the GLED. It may be configured to be arranged inside the insulating substrate 1 with respect to the BLED. Further, the RLEDs, GLEDs, and BLEDs are arranged in the center of the pixel unit 15 on a straight line parallel to the scanning signal line 2 or the light emission control signal line 3, that is, on a straight line parallel to the row direction or the column direction. You can also do it.

Further, light emitting elements 14 having different emission wavelengths (emission colors) may be arranged in each of the three adjacent pixel units 15, and a light emission control unit connected to each of them may be provided. For example, a red light emitting element composed of a red LED (RLED) or the like is arranged in the first pixel unit 15, a green light emitting element composed of a green LED (GLED) or the like is arranged in the second pixel unit 15, and a third pixel. Even if a blue light emitting element composed of a blue LED (BLED) or the like is arranged in the unit 15, and a light emitting control unit (R driver, G driver, B driver) connected to each is provided in each pixel unit 15. Good. The first pixel unit 15, the second pixel unit 15, and the third pixel unit 15 may be arranged in the row direction or in the column direction.

In the method for manufacturing a semiconductor device of the present invention, a plurality of insulating layers 31 are laminated on an insulating substrate 1, TFTs 13 are formed between the layers, and then through holes 60 penetrating the plurality of insulating layers 31 are formed. Next, a hole penetrating the insulating substrate 1 is formed in the portion of the insulating substrate 1 exposed inside the opening of the through hole 60, and a conductor column is arranged in the hole to form the penetrating conductor 16k1. is there. This configuration produces the following effects. Since the through conductor 16k1 can be formed after the TFT 13 is formed, it is possible to prevent the conductor constituting the through conductor 16k1 from contaminating the semiconductor layer 13a of the TFT 13. Further, as a result of suppressing the occurrence of the above-mentioned problems due to the heat generation of the through conductor 16k1, a highly reliable and long-life semiconductor device can be manufactured. Conventionally, when the TFT 13 is formed after the through conductor 16k1 is formed, the conductors such as copper (Cu) constituting the through conductor 16k1 diffuse and contaminate the semiconductor layer 13a of the TFT 13 in the heating step for forming the TFT 13. However, in the present invention, this problem is solved. The semiconductor layer 13a is made of low-temperature polysilicon (LTPS), amorphous silicon, or the like.

The through conductor 16k1 is formed by forming a hole penetrating the insulating substrate 1 by a laser processing method, an etching method, or the like, and then arranging a conductor column in the hole. The conductor column is formed by a thick film forming method or the like in which a conductor paste is filled in a hole and fired to produce a conductor column. Alternatively, it is formed by inserting a separately prepared conductor pillar into the hole and adhering the conductor pillar to the hole with a conductive adhesive or the like. The through conductor 16k1 is made of a metal such as copper (Cu), aluminum (Al), silver (Ag), molybdenum (Mo), nickel (Ni), chromium (Cr), or an alloy containing one or more of them.

The plurality of insulating layers 31 are composed of an inorganic material or an organic material. As the inorganic material, silicon oxide (SiO ₂ ), silicon nitride (SiN _x ) and the like can be used. As the organic material, acrylic resin, polyimide, polyamide, polyimide amide, benzocyclobutene, polysiloxane, polysilazane and the like can be used. The plurality of insulating layers 31 are formed by a CVD (Chemical Vapor Deposition) method or the like.

The wiring of the positive voltage input line 16, the negative voltage input line 17, etc. that electrically connects the through conductor 16k1 and the TFT 13 is aluminum (Al), titanium (Ti), molybdenum (Mo), tantalum (Ta), tungsten (W). ), Chromium (Cr), silver (Ag), copper (Cu), neodymium (Nd), gold (Au), etc., using a metal material composed of elements, and an alloy material containing these elements as the main components. It is formed. If translucency is required for wiring, oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide (ITSO) to which silicon oxide is added, and zinc oxide (ZnO) are used. It is formed by using a transparent conductive material made of, or a conductive material such as silicon (Si) containing phosphorus and boron, which has translucency. The wiring is formed by a plating method, a vapor deposition method, a sputtering method, a CVD method, or the like.

In the method for manufacturing a semiconductor device of the present invention, it is preferable that the through hole 16k1 is formed by an etching method and the hole penetrating the insulating substrate 1 is formed by a laser light irradiation method. In this case, the position and size of the hole penetrating the insulating substrate 1 can be accurately formed. As a result, it becomes easy to form the through conductor 16k1 having excellent heat dissipation.

In order to form the through hole 16k1 by the etching method, a photoresist is applied on the insulating layer 31 to expose a pattern for forming the through hole 16k1, and then an unnecessary portion of the insulating layer 31 is removed by the etching method. By doing so, it can be formed. As the etching method, known etching methods such as a wet etching method using an etching solution such as fluoroacid and a dry etching method using an etching gas such as carbon tetrafluoride gas can be adopted.

In order to form a hole penetrating the insulating substrate 1 by a laser light irradiation method, it can be formed by using an infrared laser (IR) device or the like that oscillates infrared rays having a light wavelength of about 780 nm to 1400 nm. Infrared rays have a large thermal effect, and when IR laser light is used, processing such as fusing and drilling of irradiated members such as steel plates and glass substrates is easy. Examples of the IR laser device include a carbon dioxide (CO ₂ ) laser device, a YAG (yttrium aluminum garnet) laser device such as an Nd: YAG (Nd-doped YAG) laser device, and the like. The laser beam of the YAG laser device has a shorter wavelength than the laser beam of the carbon dioxide (CO ₂ ) laser device, and is suitable because of its high heating efficiency. The merits of the YAG laser device are that the heat is concentrated and the heat input to the irradiated member is small, so that the strain of the irradiated member is reduced, and the shape of the hole with a good finish can be obtained by pulse control. The size of the hole can be controlled by changing the size of the focal point, and the irradiated member of various materials can be selected with less dependence on the material of the irradiated member.

Further, in the method for manufacturing a semiconductor device of the present invention, it is preferable that the conductor column is a copper column. In this case, a through conductor 16k1 having high conductivity can be formed. Therefore, it is possible to further suppress the occurrence of the above-mentioned problems due to the heat generated by the through conductor 16k1, and it is possible to prevent the copper (Cu) constituting the through conductor 16k1 from contaminating the semiconductor layer of the TFT, resulting in a long life. Can manufacture semiconductor devices.

The method for manufacturing the semiconductor device, the light emitting device, and the semiconductor device of the present invention is not limited to the above embodiment, and may include appropriate changes and improvements.

The light emitting device having the semiconductor device of the present invention can be applied to a display device such as an LED display device and an organic EL display device, and the display device can be applied to various electronic devices. The electronic devices include a complex and large display device (multi-display), an automobile route guidance system (car navigation system), a ship route guidance system, an aircraft route guidance system, a smartphone terminal, a mobile phone, a tablet terminal, and a personal digital assistant. (PDA), video cameras, digital still cameras, electronic notebooks, electronic books, electronic dictionaries, personal computers, copying machines, game equipment terminals, televisions, product display tags, price display tags, industrial programmable display devices, Car audio, digital audio players, facsimiles, printers, automatic cash deposit / payment machines (ATMs), vending machines, head mount displays (HMDs), digital display watches, smart watches, etc.

1 Insulated substrate 2 Scanning signal line 3 Light emission control signal line 13 TFT
14 Light emitting element 16 Positive voltage input line 16k1 Through conductor 17 Negative voltage input line 31 Insulation layer 60 Through hole

Claims (11)

Insulated substrate and
A through conductor penetrating the insulating substrate and
A plurality of insulating layers arranged on the insulating substrate,
A semiconductor device having a thin film transistor arranged between layers of the plurality of insulating layers and electrically connected to the through conductor.
Through holes are arranged in the portions of the plurality of insulating layers that overlap with the through conductors.
A semiconductor device in which the diameter of the opening of the through hole is larger than the diameter of the through conductor and the through conductor is located inside the opening of the through hole. The semiconductor device according to claim 1, wherein a plurality of the through conductors are evenly arranged on the insulating substrate. A plurality of the through conductors are arranged on the insulating substrate, and they include those having different distances from the edges of the insulating substrate.
The semiconductor device according to claim 1, wherein the area of the through conductor closest to the edge of the insulating substrate in a plan view is larger than the area of another through conductor in a plan view. The semiconductor device according to claim 3, wherein the current flowing through the penetrating conductor closest to the edge of the insulating substrate is larger than the current flowing through the other penetrating conductor. The insulating substrate has side conductors arranged on the side surface.
The semiconductor device according to any one of claims 1 to 4, wherein the through conductor is electrically connected to the side conductor. The semiconductor device according to claim 5, wherein the insulating substrate is provided with side wiring that is electrically independent of the side conductor on the side surface. A light emitting device having the semiconductor device according to any one of claims 1 to 6.
Electrodes that are electrically connected to the thin film transistor are arranged on the plurality of insulating layers.
A light emitting device having a light emitting element connected to the electrode. The method for manufacturing a semiconductor device according to any one of claims 1 to 6.
The plurality of insulating layers are laminated on the insulating substrate, and the thin film transistor is formed between the layers.
Next, the through hole penetrating the plurality of insulating layers is formed.
Next, the semiconductor device for forming the penetrating conductor by forming a hole penetrating the insulating substrate in a portion of the insulating substrate exposed inside the opening of the through hole and arranging a conductor column in the hole. Production method. The through hole is formed by an etching method.
The method for manufacturing a semiconductor device according to claim 8, wherein the holes penetrating the insulating substrate are formed by a laser light irradiation method. The method for manufacturing a semiconductor device according to claim 8 or 9, wherein the conductor column is a copper column. The method for manufacturing a semiconductor device according to any one of claims 8 to 10, wherein the through hole has a diameter on the side opposite to the diameter on the side of the through conductor.