JP6796941B2 - Method for Manufacturing Silicon Carbide Single Crystal Ingot - Google Patents

Description

The present invention uses a sublimation recrystallization method in which a silicon carbide raw material loaded in a crucible is heated to generate a sublimation gas and recrystallized on a seed crystal of silicon carbide opposed to the crucible. The present invention relates to a method for producing a silicon carbide single crystal ingot by growing a single crystal.

Silicon carbide (SiC) is a wide bandgap semiconductor with a wide forbidden bandwidth, and has properties far superior to conventional silicon (Si) in terms of withstand voltage and heat resistance, so it can be used as a next-generation semiconductor material. Research and development is underway.

As one of the techniques for growing a silicon carbide single crystal (SiC single crystal), the SiC raw material loaded in the pit is heated to generate a sublimation gas, and the SiC single crystal is formed on the SiC seed crystals opposed to each other in the pit. There is a sublimation recrystallization method for recrystallization (also called an improved Rayleigh method). That is, in this method, a seed crystal is attached to the lid of the crucible, a SiC raw material is placed on the container body (crucible body) of the crucible, and the SiC raw material is sublimated to form a bulk SiC single crystal on the seed crystal. To grow. At that time, impurity doping into the growing single crystal is possible. For example, in the case of an n-type SiC single crystal, nitrogen (N ₂ ) gas can be added to the growing atmospheric gas. Then, after obtaining a substantially columnar bulk-shaped SiC single crystal (ingot), it is generally cut out to a thickness of about 300 to 600 μm, and then a SiC single crystal substrate is manufactured to manufacture a SiC single crystal substrate in fields such as power electronics. Is used for manufacturing SiC devices.

Crystal growth by such a sublimation recrystallization method requires a temperature exceeding 2000 ° C., and the crystal growth is obtained by providing a temperature gradient between the seed crystal and the pit side where the SiC raw material is arranged. The SiC single crystal produced contains dislocations, stacking defects, and the like. Of these, the dislocations include through-blade dislocations (TED), basal plane dislocations (BPD), and through-spiral dislocations (TSD). For example, in a commercially available SiC single crystal substrate, the through-spiral dislocation is 8 × 10 ^{2 to} 3 × 10 ³ (pieces / cm ² ), through-blade dislocations 5 × 10 ³ to 2 × 10 ⁴ (pieces / cm ² ), basal dislocations 2 × 10 ³ to 2 × 10 ⁴ ( There is a report that there are about 1 piece / cm ² ) (see Non-Patent Document 1). Among them, for example, it is known that TSD causes poor oxide film of the device and causes dielectric breakdown, and TED causes leakage current of the device. For the production of high-performance SiC device. Need to reduce these dislocations as much as possible.

Therefore, various methods have been studied and studied in order to reduce the dislocation density of the obtained SiC single crystal. For example, by growing a SiC single crystal as an initial growth layer at a predetermined growth pressure and substrate temperature, and then performing crystal growth while gradually reducing the substrate temperature and pressure, a SiC single crystal having less TSD can be produced together with a micropipe. After growing a SiC single crystal as an initial growth layer by a method for obtaining it (see Patent Document 1), a predetermined growth pressure, and a substrate temperature, the substrate temperature is maintained as it is, and the pressure is reduced to increase the growth rate to grow crystals. Therefore, there is a method of suppressing the generation of micropipes and reducing the dislocation density of TSD or the like (see Patent Document 2).

Further, since impurities contained in the SiC raw material cause crystal defects when incorporated into the SiC single crystal, a method using a high-purity SiC raw material having an impurity element content of 0.1 ppm or less has been proposed. See Patent Document 3). That is, as the silicon carbide powder to be loaded into the crucible as the SiC raw material, the one obtained by the Acheson method is generally used. In this Achison method, silicon carbide is synthesized by directly energizing and reducing carbon materials such as graphite and petroleum coke and silica sand (silica) in an electric furnace, so that silicon carbide can be produced in large quantities. However, since it is necessary to crush the obtained agglomerates, they may be mixed in the crushing step or contain a large amount of impurities derived from the material. Therefore, in Patent Document 3, by heat-treating the silicon carbide powder obtained by the Achison method at 2100 ° C to 2500 ° C, a predetermined element (elements having an atomic number of 3 or more belonging to groups 1 to 16 of the periodic table) It is used as a SiC raw material for the sublimation recrystallization method by removing an impurity element (excluding elements having atomic numbers 6 to 8 and 14 to 16).

However, in the conventional method, even if the growth conditions are optimized by the sublimation recrystallization method or the impurities of the SiC raw material are removed and adjusted, crystal defects such as dislocations have not been effectively reduced. .. In particular, it is important to increase the diameter and size of the obtained SiC single crystal for the purpose of suppressing the cost of the SiC device and popularizing it, but the occurrence of crystal defects is more remarkable when trying to produce a large SiC single crystal. Become.

JP-A-2002-284599 JP-A-2007-119273 JP-A-2009-173501

Noboru Otani, SiC and Related Wide Gap Semiconductor Study Group 17th Lecture Proceedings, 2008, p8

As described above, in the sublimation recrystallization method for growing a SiC single crystal on a seed crystal, the conventional method has not been able to reliably reduce crystal defects such as dislocations, and these crystal defects occur. It cannot be said that the cause has been fully elucidated.

Therefore, the present inventors have repeatedly studied the behavior of impurities contained in the SiC raw material loaded in the crucible, and found that the amount of the impurity elements in relation to the size of the SiC single crystal growing on the seed crystal. It was found that crystal defects develop when a certain amount is reached. Then, they found that the occurrence of crystal defects can be controlled by the value (Q / S) obtained by dividing the total amount Q of the impurity elements contained in the SiC raw material by the area S of the crystal growth surface of the seed crystal, and completed the present invention. It was.

Therefore, an object of the present invention is to control the occurrence of crystal defects such as micropipes and dislocations to grow a SiC single crystal, and to produce a high-quality SiC single crystal ingot with few crystal defects. The purpose is to provide a method for producing a crystalline ingot.

That is, the gist of the present invention is as follows.
(1) Silicon carbide single crystal on the seed crystal by the sublimation recrystallization method in which the silicon carbide raw material loaded in the pit is heated to generate sublimation gas and recrystallized on the seed crystal of silicon carbide arranged opposite to each other in the pit. A method for producing a silicon carbide single crystal ingot by growing a crystal to produce a silicon carbide single crystal ingot, wherein the total amount Q of impurity elements contained in the silicon carbide raw material is the crystal growth surface of the seed crystal in which the silicon carbide single crystal grows. A method for producing a silicon carbide single crystal ingot, which comprises growing a silicon carbide single crystal under the condition that the value (Q / S) divided by the area S of is 10 mg / cm ² or less.
(2) The method for producing a silicon carbide single crystal ingot according to (1), wherein the total amount Q of the impurity elements contained in the silicon carbide raw material is the total of the impurity elements having a content of 0.01 mass ppm or more.
(3) The total amount Q of impurity elements contained in the silicon carbide raw material is simulated by the total amount of the total contents of metal element impurities Al, Fe, Ti, Cr, Ni, and V (1) or (2). ). The method for producing a silicon carbide single crystal impurity.

According to the present invention, a SiC single crystal can be grown while controlling the occurrence of crystal defects such as dislocations, and a high-quality SiC single crystal ingot with few crystal defects can be produced. By making it possible to control the occurrence of crystal defects as in the present invention, it becomes possible to obtain a high-quality SiC single crystal ingot even when the diameter and size of the SiC single crystal ingot are increased. Since it is not necessary to unnecessarily purify the SiC raw material, the cost of the SiC device can be suppressed.

FIG. 1 is an optical micrograph (magnification of 100 times) of a vertical cross section obtained by cutting a crystal growth region in the vicinity of a seed crystal of a SiC single crystal ingot in parallel with the crystal growth direction, and (a) is a SiC single crystal of Test Example 4. It is an ingot, and (b) is the case of the SiC single crystal ingot of Test Example 1. FIG. 2 is an explanatory diagram of a single crystal growth apparatus by the improved Rayleigh method used for manufacturing a SiC single crystal ingot.

Hereinafter, the present invention will be described in detail.
The present invention is based on a sublimation recrystallization method in which a silicon carbide (SiC) raw material loaded in a pit is heated to generate a sublimation gas, which is then recrystallized onto a silicon carbide (SiC) seed crystal arranged oppositely in the pit. Regarding the method for producing a silicon carbide (SiC) single crystal ingot that grows a silicon carbide (SiC) single crystal on a seed crystal, the total amount Q of impurity elements contained in the SiC raw material is the crystal growth surface of the seed crystal in which the SiC single crystal grows. By growing the SiC single crystal under the condition that the value (Q / S) divided by the area S is 10 mg / cm ² or less, the occurrence of dislocations and crystal defects such as micropipes is suppressed.

As described above, as the SiC raw material used in the sublimation recrystallization method, those obtained by the Achison method are generally used, and they contain various impurities. For example, there are various elements from metals such as Fe and V to non-metals such as S and Cl, but those having a relatively large content are metals, of which Na, Mg, Al, Ca, Ti and V. , Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo and the like are considered to be particularly related to the generation of dislocations and crystal defects such as micropipes for the following reasons. Among them, the contents of Al, Fe, Ni, Cr, Ti, and V are high, and these metallic elements are mixed during the production of SiC by the Atison method, or the produced SiC is pulverized to a predetermined particle size. It is presumed that it was mixed in the step of granulating.

That is, the impurity elements in the SiC raw material, such as the metal-based elements described above, have a lower sublimation temperature than SiC and easily form eutectic with Si. Therefore, in the initial stage of crystal growth of a SiC single crystal, when a predetermined condition is satisfied, for example, metal-based elements aggregate in a region near the seed crystal to form droplets, or these metal-based elements and Si It is considered to form a eutectic with. However, such droplets and eutectics cannot be confirmed after the crystal growth of the SiC single crystal, and in reality, as shown in FIG. 1 (a), voids appearing in black in the vicinity of the seed crystal. Appears as granular defects such as (bubbles). Even if the granular defect is large, it is about 10 to 20 μm, and since the above-mentioned metal elements and the like are not detected in the elemental analysis of the granular defect, the metal forming a eutectic with droplets and Si. It is presumed that system elements and the like are vaporized. Then, it is considered that dislocations (particularly through-blade dislocations and penetrating spiral dislocations) and micropipes occur in the crystal growth direction starting from these granular defects, and in the SiC single crystal grown after the occurrence of the granular defects. There will be a large number of dislocation defects and micropipe defects.

By the way, when SiC raw materials having the same impurity concentration (SiC raw materials having the same purity) are used, the above-mentioned granular defects do not always occur in the vicinity of the seed crystal. That is, depending on the conditions of crystal growth, it is confirmed that granular defects occur and cases where they do not occur. As a result of repeated studies to find the cause of this phenomenon, the total amount Q of impurity elements contained in the SiC raw material was arranged by the value (Q / S) divided by the area S of the crystal growth surface of the seed crystal in which the SiC single crystal grows. I found that I could do it. That is, if the Q / S is 10 mg / cm ² or less, preferably 5 mg / cm ² or less, and more preferably 1 mg / cm ² or less, the occurrence of granular defects in the vicinity of the seed crystal can be suppressed, resulting in As a result, crystal defects such as dislocations and micropipes can be reduced.

Regarding the total amount Q of the impurity elements contained in the SiC raw material, preferably, the SiC raw material is elementally analyzed by Glow Discharge Mass Spectrometry (GDMS) or the like, and the content is 0 except for Si and C. It can be obtained by totaling the impurity elements of 0.01 mass ppm or more. Further, as described above, according to such an analysis, the content of metallic elements is high, and these are considered to be the main causes of causing granular defects in the region near the seed crystal. Therefore, Na which is a metallic element impurity. , Mg, Al, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, and Mo may be regarded as the total amount of impurity elements Q, and more specifically, Al. , Fe, Ti, Cr, Ni, and V may be regarded as the total amount Q of impurity elements.

The reason why the crystal defects in the SiC single crystal can be controlled by the above Q / S is that the amount of impurity elements present when the SiC single crystal grows in the vicinity of the seed crystal exceeds a certain amount, as described above. It is presumed that the impurity elements aggregate to form droplets or form a single crystal with Si. Since the metal-based elements mentioned above have a lower sublimation temperature than SiC, these metal-based elements sublimate in the SiC raw material loaded in the crucible at the initial stage of crystal growth and gather in the vicinity of the seed crystal. it is conceivable that. At that time, if there are many impurity elements that sublimate in the initial stage and the concentration becomes high, it becomes eutectic with droplets and Si, and it is presumed that the above-mentioned granular defects occur in the SiC single crystal. That is, even when SiC raw materials having the same purity are used, when producing a larger (higher height) SiC single crystal ingot, it is necessary to use a large amount of SiC raw materials, and the total amount of impurity elements increases. Therefore, there is a possibility that impurity elements are concentrated in the initial stage of crystal growth and the above-mentioned granular defects are generated. Therefore, even if a SiC raw material having a relatively high purity is used, the purity may be insufficient in order to scale up the SiC single crystal ingot. Conversely, if the crystal growth conditions are such that the Q / S does not exceed 10 mg / cm ² , a low-purity SiC raw material may be used.

In the present invention, in order to obtain the crystal growth condition in which the Q / S is 10 mg / cm ² or less, the size (caliber and height) of the SiC single crystal ingot to be grown and the SiC raw material to be loaded in the crucible should be adjusted. do it. For example, when the diameter of the SiC single crystal ingot to be grown and the SiC raw material to be used are determined, the loading amount of the SiC raw material to be loaded in the crucible is determined according to the concentration of impurity elements contained in the SiC raw material (purity of the SiC raw material). It may be adjusted to control the height of the SiC single crystal ingot. If the diameter and height of the SiC single crystal ingot to be grown are determined, the concentration of impurity elements contained in the SiC raw material is adjusted to adjust the total amount (content) of the impurity elements contained in the SiC raw material in the crucible. ) Should be controlled.

Here, in adjusting the concentration of the impurity element contained in the SiC raw material, there is no particular limitation on the means for removing the impurity element, for example, a method of dissolving the metal element in the SiC raw material by washing with fluorine nitric acid. Alternatively, a method of heating the SiC raw material to a high temperature to vaporize the impurity element and the like can be mentioned.

Further, in the present invention, if the Q / S is 10 mg / cm ² or less, the SiC single crystal is grown on the seed crystal in the same manner as the known method for other conditions, and the SiC single crystal ingot. Can be manufactured. For example, the diameter of the obtained SiC single crystal ingot is not particularly limited, and it is possible to manufacture a SiC single crystal ingot having a diameter of 50 mm to 150 mm, which is currently the mainstream, and it is applicable to a larger diameter. It is also possible to produce a high-quality SiC single crystal ingot with suppressed crystal defects. In particular, a large-sized SiC single crystal ingot having a diameter of 100 mm or more can be obtained with high quality, so that the cost of the SiC device can be suppressed by the scale-up effect. On the other hand, according to this Q / S concept, it is possible to manufacture a high-quality SiC single crystal ingot using a relatively inexpensive low-purity SiC raw material with reduced purification steps and the like, so that the cost of the SiC device is also high. Can be suppressed. Although the present invention can be applied without being limited to the size of the obtained SiC single crystal ingot, the diameter of the SiC single crystal ingot is substantially 300 mm or less in view of the current manufacturing technology. Is desirable.

Further, there is no limitation on the polytype (polymorph) of the obtained SiC single crystal ingot, and of course, it is applied as a method for growing SiC single crystals such as 4H, 6H, 3C, and 15R, which are typical polytypes. It is possible. Furthermore, the same applies to the off-angle of the seed crystal to be used. For example, a commonly adopted seed crystal having an off-angle of 0 to 15 degrees can be used, and further, nitrogen gas during crystal growth. It is also possible to adjust the resistivity of the obtained SiC single crystal ingot using a source (N ₂ ) or the like.

Hereinafter, the present invention will be described in more detail based on test examples. The present invention is not limited to these contents.

(Test Examples 1 to 5)
FIG. 2 shows a single crystal growth apparatus by the improved Rayleigh method used for producing the SiC single crystal ingot according to Test Examples 1 to 5. The crystal growth of SiC is carried out by inducing and heating the SiC raw material, which is a sublimation raw material, in the crucible to generate sublimation gas, and recrystallizing it on the seed crystals arranged opposite to each other in the crucible. Here, the seed crystal 1 is attached to the inner surface of the crucible lid body 4 that forms the graphite crucible, and the SiC raw material 2 is loaded into the crucible body 3 that also forms the graphite crucible. The crucible body 3 and the crucible lid 4 are covered with a heat insulating material 7 for heat shielding, and the graphite crucible (the crucible body 3 and the crucible lid 4) covered with the heat insulating material 7 is a double quartz tube 5. It is internally installed on the graphite support pedestal 6. The inside of the double quartz tube 5 is evacuated using a vacuum exhaust device and a pressure control device 11, and then high-purity Ar gas having a purity of 99.9999% or more is controlled by the mass flow controller 10 via the pipe 9. While keeping the inside of the double quartz tube 5 at a predetermined pressure by using the vacuum exhaust device and the pressure control device 11, a high-frequency current is passed through the work coil 8 to form a crucible body 3 filled with the SiC raw material 2. The temperature of the crucible lid 4 to which the seed crystal 1 is attached is raised so as to reach the target temperature. Similarly, nitrogen gas (N ₂ ) is also flowed into the double quartz tube 5 through the pipe 9 while being controlled by the mass flow controller 10, and the nitrogen partial pressure in the atmospheric gas is controlled to enter the SiC crystal. The concentration of nitrogen elements taken in was adjusted. The temperature of the seed crystal 1 was measured by providing an optical path having a diameter of about 10 mm in the heat insulating material 7 covering the upper surface of the crucible lid 4 and using a radiation thermometer (not shown), and the measured temperature was defined as the seed crystal temperature. ..

In Test Examples 1 to 5, three kinds of SiC raw materials A to C were used as sublimation raw materials. Of these, SiC raw materials A and B are both commercially available products (SiC raw material A: purity 99%, SiC raw material B: purity 96%), and several grams of each are sampled and subjected to glow discharge mass spectrometry (GDMS). Elemental analysis revealed that it contained impurity elements as shown in Table 1. Further, the SiC raw material C is obtained by immersing the SiC raw material B in fluorinated nitric acid (a mixture of HF and HNO ₃ at a ratio of 1: 1) for 2 hours to dissolve metal impurities and washing the material. Analysis by GDMS after washing. The results are shown in Table 2. In Tables 1 and 2, elements having a content of less than 0.01 ppm are designated as "-".

Further, in Test Examples 1 to 5, two kinds of seed crystals 1 were prepared. First, from a 4H-type SiC single crystal having a diameter of 100 mm and having the (0001) plane as the main plane, the off orientation of the (0001) plane is the <11-20> direction, and the off angle of the (0001) plane is A SiC single crystal substrate was cut out so that the temperature was 4 degrees, and the cut out surface was mirror-polished to prepare a 4-inch diameter seed crystal (crystal growth surface area S = 78.5 cm ² ). Further, a SiC single crystal substrate having a diameter of 150 mm and having a (0001) plane as a main surface is cut out in the same manner as above, and mirror-polished to obtain a 6-inch diameter with an off-angle of 4 degrees. A seed crystal (crystal growth surface area S = 176.6 cm ² ) was prepared.

Using the three types of SiC raw materials A to C prepared above and the two types of seed crystals, the SiC single crystal ingots according to Test Examples 1 to 5 were produced under the crystal growth conditions shown in Table 3. Here, the total amount of impurity elements contained in the SiC raw material used in each test example (total of impurity elements shown in Table 1 or 2) is taken as the total amount Q, and Al, Fe, Ti, Cr, Ni, and V (The sum of these elements shown in Table 1 or 2) was taken as the total amount Q'.

That is, in Test Example 1, a seed crystal 1 having a diameter of 4 inches was attached to the inner surface of the crucible lid 4 of the single crystal growing device shown in FIG. 2, and 7500 g of SiC raw material A was added to the crucible body 3 as the SiC raw material 2. After loading, the outside of the graphite crucible composed of the crucible body 3 and the crucible lid 4 is covered with a graphite felt (insulation material) 7, and the graphite crucible coated with the graphite felt 7 is covered with the graphite support rod 6. It was placed on top and installed inside the double graphite tube 5. Next, after vacuum exhausting the inside of the double quartz tube 5, high-purity Ar gas is introduced as an atmospheric gas, and a current is passed through the work coil 8 to raise the temperature while keeping the pressure inside the double quartz tube at about 80 kPa. , The temperature of the seed crystal 1 was raised until it reached 2300 ° C. Then, the pressure inside the quartz tube was reduced to 1.3 kPa, and crystal growth was carried out for 50 hours while keeping the nitrogen concentration in the growing crystal at about 1 × 10 ¹⁹ cm ^-3 . Crystal growth was also carried out in Test Examples 2 to 5 under the conditions shown in Table 3 in the same manner as in Test Example 1 to obtain SiC single crystal ingots according to Test Examples 1 to 5, respectively.

When the polymorphism (polymorphism) of the SiC single crystal ingots according to Test Examples 1 to 5 obtained above was confirmed using a Raman spectroscope, all of them had a 4H polymorphism over the entire surface of the crystal. Was there.
On the other hand, for each SiC single crystal ingot, a vertical cross section of a crystal growth region near the seed crystal (a portion having a height of about 1 mm from the crystal growth surface of the seed crystal) is obtained, and an optical microscope with the observation plane as the (-1100) plane. A photograph was taken (magnification 100 times), and the presence or absence of granular defects appearing in black was observed. Further, an observation substrate on the (000-1) plane was cut out from a position 5 mm from the end of crystal growth of each SiC single crystal ingot, mirror-polished, and then the micropipe was observed by an X-ray topograph. Furthermore, dislocation defects were observed from the above observation substrate by the molten KOH etching method. The results are summarized in Table 3.

As shown in Table 3, in the SiC single crystal ingots of Test Examples 4 and 5, granular defects were generated in the crystal growth region near the seed crystal. FIG. 1A is an optical micrograph of a crystal growth region in the vicinity of the seed crystal of Test Example 4, and granular black spots of about 10 to 20 μm are granular defects. On the other hand, such granular defects were not confirmed in the SiC single crystal ingots according to Test Examples 1 to 3. FIG. 1B is an optical micrograph showing a crystal growth region near the seed crystal of Test Example 1.

Further, in the SiC single crystal ingots of Test Examples 1 to 3, the micropipe density was 1/300 or less and the dislocation defect density was 1/2 or less as compared with those of Test Examples 4 and 5. Here, when the longitudinal cross section of the SiC single crystal ingot of Test Example 4 cut parallel to the crystal growth direction was observed by the X-ray topograph method under the condition of the diffraction plane (0004), the micropipe and the micropipe and the granular defect were observed as starting points. It was confirmed that a dislocation defect had occurred. That is, it is considered that the reason why the SiC single crystal ingots of Test Examples 1 to 3 had reduced micropipes and dislocation defects as compared with those of Test Examples 4 and 5 was because the granular defects in the crystal growth region near the seed crystal were suppressed. Be done. For example, in Test Example 1 and Test Example 5, the same SiC raw material is used to grow crystals on a seed crystal having a diameter of 4 inches, but in Test Example 1, the occurrence of granular defects can be suppressed. There is.

Therefore, as in the present invention, the SiC single crystal is grown under the condition that the value Q / S obtained by dividing the total amount Q of the impurity elements contained in the SiC raw material by the area S of the crystal growth surface of the seed crystal is 10 mg / cm ² or less. By doing so, or by simulating this total amount Q with the total content of metal element impurities and growing a SiC single crystal under the condition that Q / S is 10 mg / cm ² or less (in the above test example, it is contained in the SiC raw material). It is possible to produce a high-quality SiC single crystal ingot with few crystal defects (using the total amount Q'of Al, Fe, Ti, Cr, Ni, and V).

1: Seed crystal, 2: SiC raw material, 3: Crucible body, 4: Crucible lid, 5: Double quartz tube, 6: Graphite support pedestal, 7: Insulation material, 8: Work coil, 9: Piping, 10: Mass flow controller, 11: Vacuum exhaust device and pressure control device.

Claims (3)

A silicon carbide single crystal is grown on the seed crystal by a sublimation recrystallization method in which the silicon carbide raw material loaded in the pit is heated to generate a sublimation gas and recrystallized on the seed crystal of silicon carbide arranged oppositely in the pit. This is a method for producing a silicon carbide single crystal ingot, wherein the total amount Q of impurity elements contained in the silicon carbide raw material is the area S of the crystal growth surface of the seed crystal on which the silicon carbide single crystal grows. A silicon carbide single crystal is grown under the condition that the value (Q / S) divided by 3 is 1 mg / cm ² or less, and the area S is an area obtained from a diameter of 50 mm or more and 300 mm or less. A method for producing a single crystal ingot. The method for producing a silicon carbide single crystal ingot according to claim 1, wherein the total amount Q of the impurity elements contained in the silicon carbide raw material is the total of the impurity elements having a content of 0.01 mass ppm or more. The carbide according to claim 1 or 2, wherein the total amount Q of the impurity elements contained in the silicon carbide raw material is simulated by the total amount of the total contents of the metal element impurities Al, Fe, Ti, Cr, Ni, and V. A method for producing a silicon single crystal ingot.

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