JP6790248B2 - 高アスペクト比構造測定のための赤外分光反射計 - Google Patents
高アスペクト比構造測定のための赤外分光反射計 Download PDFInfo
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- 238000005259 measurement Methods 0.000 title claims description 250
- 238000005286 illumination Methods 0.000 claims description 125
- 230000003287 optical effect Effects 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 31
- 230000003595 spectral effect Effects 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 27
- 230000010287 polarization Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 13
- 238000001228 spectrum Methods 0.000 claims description 13
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 9
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 9
- 230000036211 photosensitivity Effects 0.000 claims description 9
- 238000012360 testing method Methods 0.000 claims description 8
- 239000006185 dispersion Substances 0.000 claims description 7
- 238000004458 analytical method Methods 0.000 claims description 5
- 210000001747 pupil Anatomy 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 60
- 239000010408 film Substances 0.000 description 44
- 239000004065 semiconductor Substances 0.000 description 32
- 229910003481 amorphous carbon Inorganic materials 0.000 description 15
- 230000035945 sensitivity Effects 0.000 description 14
- 238000012545 processing Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 239000012528 membrane Substances 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 238000007689 inspection Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000008033 biological extinction Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 230000003993 interaction Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000000235 small-angle X-ray scattering Methods 0.000 description 3
- 238000002211 ultraviolet spectrum Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- BCOSEZGCLGPUSL-UHFFFAOYSA-N 2,3,3-trichloroprop-2-enoyl chloride Chemical compound ClC(Cl)=C(Cl)C(Cl)=O BCOSEZGCLGPUSL-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000007425 progressive decline Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/28—Measuring arrangements characterised by the use of optical techniques for measuring areas
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/021—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using plane or convex mirrors, parallel phase plates, or particular reflectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0224—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using polarising or depolarising elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0229—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using masks, aperture plates, spatial light modulators or spatial filters, e.g. reflective filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
- G01N2021/213—Spectrometric ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N2021/3129—Determining multicomponents by multiwavelength light
- G01N2021/3137—Determining multicomponents by multiwavelength light with selection of wavelengths after the sample
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
- G01N2021/335—Vacuum UV
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4711—Multiangle measurement
Description
本特許出願は、2016年9月29日に出願された米国仮特許出願第62/401,840号に基づく、米国特許法第119条の下での優先権を主張し、この出願の主題は、全体が参照によって本明細書に組み込まれる。
Claims (28)
- 計測システムであって、
750ナノメートルから2,600ナノメートルまでの範囲に及ぶ波長を含むある量の広帯域照明光を生成するように構成された1つ又は複数の照明源と、
前記ある量の照明光を、1つ又は複数の入射角、1つ又は複数の方位角あるいはその結合で、前記照明源から被測定試料の表面上の測定スポットまで導くように構成された照明光学部品サブシステムと、
ある量の収集光を前記試料の表面上の前記測定スポットから収集するように構成された収集光学部品サブシステムと、
入射光を感知できる平坦な2次元表面を有する少なくとも1つの検出器であって、前記少なくとも1つの検出器は、異なる感光性をそれぞれ有する2つ以上の異なる表面領域を含み、前記2つ以上の異なる表面領域は、前記少なくとも1つの検出器の表面を横切って波長分散の方向と整列しており、前記少なくとも1つの検出器は、前記入射光を検出して、前記検出された入射光を示す出力を生成するように構成されている、少なくとも1つの検出器と、
を含む赤外分光反射計と、
前記少なくとも1つの検出器の出力の分析に基づいて前記被測定試料についての対象のパラメータの推定値を生成するように構成されたコンピューティングシステムと、
を備える計測システム。 - 前記照明光学部品サブシステムは、前記ある量の照明光を、5度と40度との間の範囲内の複数の入射角で前記測定スポットまで導く、請求項1に記載の計測システム。
- 190ナノメートルから900ナノメートルまでの範囲に及ぶ波長を含む照明光によって前記試料を測定するように構成された紫外〜近赤外分光反射計を更に備える、請求項1に記載の計測システム。
- 150ナノメートルから300ナノメートルまでの範囲に及ぶ波長を含む照明光によって前記試料を測定するように構成された遠紫外〜紫外分光反射計を更に備える、請求項1に記載の計測システム。
- 750ナノメートルから2600ナノメートルまでの範囲に及ぶ波長を含む照明光によって前記試料を測定するように構成された赤外分光楕円偏光計を更に備える、請求項2に記載の計測システム。
- 190ナノメートルから900ナノメートルまでの範囲に及ぶ波長を含む照明光によって前記試料を測定するように構成された紫外〜近赤外分光楕円偏光計を更に備える、請求項5に記載の計測システム。
- 150ナノメートルから300ナノメートルまでの範囲に及ぶ波長を含む照明光によって前記試料を測定するように構成された遠紫外〜紫外分光楕円偏光計を更に備える、請求項5に記載の計測システム。
- 前記分光楕円偏光計は、40度超である複数の入射角で前記試料を照明するように構成されている、請求項5に記載の計測システム。
- 結合された前記赤外分光反射計と前記分光楕円偏光計とは、150ナノメートルから4,500ナノメートルまでの波長範囲にわたるスペクトル領域を感知できる、請求項5に記載の計測システム。
- 前記試料上の前記赤外分光反射計の測定スポットと、前記試料上の前記分光楕円偏光計の測定スポットとは、同じ位置にある、請求項5に記載の計測システム。
- 異なる感光性をそれぞれ有する前記2つ以上の異なる表面領域は、InGaAs材料を含む、請求項1に記載の計測システム。
- 前記試料の基板の背面からの反射を遮蔽するように構成された収集光学部品サブシステムの収集瞳のところに又はその近傍に配設された中央遮蔽を更に備える、請求項1に記載の計測システム。
- 前記試料の基板の背面からの反射を遮蔽するように構成された前記照明光学部品サブシステムの照明瞳のところに又はその近傍に配設された中央遮蔽を更に備える、請求項1に記載の計測システム。
- 前記1つ又は複数の入射角は、垂直入射角を含まない、請求項1に記載の計測システム。
- 前記赤外分光反射計の対物レンズは、シュワルツシルト対物レンズである、請求項1に記載の計測システム。
- 前記照明光学部品サブシステムは、前記ある量の照明光を、5度と25度との間の範囲内の複数の入射角で前記測定スポットまで導く、請求項1に記載の計測システム。
- 前記赤外分光反射計の測定チャネルは、前記赤外分光反射計の照明経路、収集経路又はその両方内に偏光素子を含む、請求項1に記載の計測システム。
- 前記被測定試料は、3次元NAND構造又はダイナミックランダムアクセスメモリ構造を含む、請求項1に記載の計測システム。
- 計測システムであって、
750ナノメートルから2,600ナノメートルまでの範囲に及ぶ波長を含むある量の広帯域照明光を生成するように構成された1つ又は複数の照明源と、
前記ある量の照明光を、5度超の1つ又は複数の入射角で前記照明源から被測定試料の表面上の測定スポットまで導くように構成された照明光学部品サブシステムと、
ある量の収集光を前記試料の表面上の前記測定スポットから収集するように構成された収集光学部品サブシステムと、
入射光を感知できる平坦な2次元表面を有する少なくとも1つの検出器であって、前記少なくとも1つの検出器は、前記入射光を検出して、前記検出された入射光を示す出力を生成するように構成されている、少なくとも1つの検出器と、
を含む赤外分光反射計と、
前記少なくとも1つの検出器の出力についての分析に基づいて、前記被測定試料についての対象のパラメータの推定値を生成するように構成されたコンピューティングシステムと、
を備える計測システム。 - 前記少なくとも1つの検出器は、異なる感光性をそれぞれ有する2つ以上の異なる表面領域を含み、前記2つ以上の異なる表面領域は、前記少なくとも1つの検出器の表面を横切って波長分散の方向と整列している、請求項19に記載の計測システム。
- 異なる感光性をそれぞれ有する前記2つ以上の異なる表面領域は、InGaAs材料を含む、請求項20に記載の計測システム。
- 前記赤外分光反射計の対物レンズは、シュワルツシルト対物レンズである、請求項19に記載の計測システム。
- 前記赤外分光反射計の測定チャネルは、偏光素子を前記赤外分光反射計の照明経路、収集経路又はその両方内に含む、請求項19に記載の計測システム。
- 計測システムであって、
ある量の広帯域照明光を生成するように構成された1つ又は複数の照明源と、
前記ある量の照明光を、5度と40度との間の範囲内の1つ又は複数の入射角で、前記照明源から被測定試料の表面上の測定スポットまで導くように構成された照明光学部品サブシステムと、
ある量の収集光を、前記試料の表面上の前記測定スポットから収集するように構成された収集光学部品サブシステムと、
入射光を感知できる平坦な2次元表面を有する少なくとも1つの検出器であって、前記少なくとも1つの検出器は、異なる感光性をそれぞれ有する2つ以上の異なる表面領域を含み、前記2つ以上の異なる表面領域は、前記少なくとも1つの検出器の表面を横切って波長分散の方向と整列しており、前記少なくとも1つの検出器は、前記入射光を検出して、前記検出された入射光を示す出力を生成するように構成されている、少なくとも1つの検出器と、
を含む赤外分光反射計と、
前記少なくとも1つの検出器の出力の分析に基づいて、前記被測定試料についての対象のパラメータの推定値を生成するように構成されたコンピューティングシステムと、
を備える計測システム。 - 前記ある量の広帯域照明光は、750ナノメートルから2,600ナノメートルまでの範囲に及ぶ波長を含む、請求項24に記載の計測システム。
- 前記被測定試料は、3次元NAND構造又はダイナミックランダムアクセスメモリ構造を含む、請求項24に記載の計測システム。
- 方法であって、
ある量の広帯域照明光を、複数の入射角で、照明源から被測定試料の表面上の測定スポットまで導くことであって、前記ある量の広帯域照明光は、750ナノメートルから2,600ナノメートルまでの範囲に及ぶ波長を含むことと、
ある量の収集光を、前記試料の表面上の前記測定スポットから収集して、前記ある量の収集光を1つ又は複数の検出器まで導くことと、
前記ある量の収集光と関連する測定スペクトルを、入射光を感知できる平坦な2次元表面を有する少なくとも1つの検出器によって検出することであって、前記少なくとも1つの検出器は、異なる感光性をそれぞれ有する2つ以上の異なる表面領域を含み、前記2つ以上の異なる表面領域は、前記少なくとも1つの検出器の表面を横切って波長分散の方向と整列していることと、
を備える方法。 - 前記照明波長の範囲にわたって前記測定スペクトルを検出することが、同時に実行される、請求項27に記載の方法。
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