JP6775432B2 - Vacuum transfer module and substrate processing equipment - Google Patents

Description

The present invention relates to a vacuum transfer module and a substrate processing apparatus having excellent maintainability.

Conventionally, predetermined processes such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and etching performed on a substrate (wafer) are generally performed inside a processing chamber (process chamber) held in a vacuum. Is targeted. As a device for performing such substrate processing, a plurality of processing chambers are arranged around a transport chamber held in a vacuum from the viewpoint of improving processing efficiency and suppressing oxidation and contamination. However, there is known a multi-chamber type device (cluster tool) capable of loading and unloading a substrate into each processing chamber by a transport mechanism (transport robot) provided in the transport chamber.

For example, the substrate processing apparatus (vacuum processing system 1) disclosed in Patent Document 1 has a plurality of processing chambers (CVD processing chambers 12, 13, 14) that perform substrate processing under vacuum, as shown in the plan view of FIG. , 15) and a transport chamber (transport chamber 11). The transport chamber 11 has a regular hexagonal shape in a plan view, and the six side surfaces are adjacent to each other at the same angle (60 ° because the plan view shape of the transport chamber 11 is a regular hexagon). Of the six side surfaces of the transport chamber 11, four processing chambers 12, 13, 14, and 15 are connected to the four side surfaces via a gate valve G. One processing chamber is connected per side surface of the transport chamber 11 to which the processing chambers 12, 13, 14 and 15 are connected. Since the angles formed by the processing chamber connecting surfaces are equal, the distance between adjacent processing chambers is also equal.

By the way, as maintenance work of such a substrate processing apparatus, for example, work of regularly replacing and repairing a transfer chamber, a transfer mechanism, parts of the processing chamber, measuring instruments, a valve body of a gate valve, an O-ring, and the like can be mentioned. Be done. Since these maintenance operations are performed near the transport room and the processing room, it is difficult for the operator to perform the replacement / repair work if the distance between the adjacent processing rooms is narrow. As a result, the efficiency of the maintenance work becomes poor, and the maintainability becomes inferior. In general, since a substrate processing apparatus is required to have a high throughput, it is required to increase the number of processing rooms installed. However, in the conventional substrate processing apparatus, since the intervals between the processing chambers are equal, as the number of processing chambers installed increases, the intervals between adjacent processing chambers inevitably become narrower, and the maintainability must be inferior. There is a problem that it cannot be obtained.

Patent Document 2 discloses that a region vacated by not connecting a processing chamber to one side surface of a transport chamber is used as a maintenance region. In this way, a large maintenance area can be secured, but providing a maintenance area without connecting the processing rooms has no choice but to reduce the number of processing rooms installed, and sacrifices high throughput. There is a problem that it becomes.

Japanese Patent No. 5208948 Japanese Unexamined Patent Publication No. 2011-23788

The present invention has been made to solve such a problem, and it is possible to efficiently perform maintenance work while maintaining high throughput, and to provide a vacuum transfer module and a substrate processing apparatus having excellent maintainability. The challenge is to provide.

In order to solve the above problems, the present invention includes a transport chamber having a convex m-square shape (m is an integer of 4 or more) in a plan view, and a transport mechanism arranged in the transport chamber to transport the substrate. Of the m side surfaces of the transport chamber, at least the first side surface, the second side surface, and the third side surface adjacent to each other in this order are the first treatment chamber, the second treatment chamber, and the second treatment chamber in which the substrate transported by the transfer mechanism is processed. A straight line connecting the plan view center of the transport chamber and the plan view center of the first processing chamber connected to the third processing chamber, and the plan view center connected to the transport chamber. 2 The first straight line connecting the center of the processing chamber in the plan view and the straight line connecting the center of the transport chamber in the plan view and the center of the third processing chamber connected in the plane view of the third processing chamber are substantially orthogonal to each other. Provided is a vacuum transfer module characterized in that the angle formed by the side surface and the second side surface is different from the angle formed by the second side surface and the third side surface.

In the vacuum transfer module of the present invention, among the m side surfaces of the transfer chamber, a plurality of sets of three side surfaces that can be connected to the first processing chamber, the second processing chamber, and the third processing chamber, respectively, and are adjacent to each other in this order. If present, at least one of the plurality of sets of three sides is the first side surface, the second side surface, and the third side surface, and the first side surface, the second side surface, and the third side surface are the transport. A straight line connecting the plan view center of the chamber and the plan view center of the first processing chamber, a straight line connecting the plan view center of the transport chamber and the plan view center of the second processing chamber, and The angle formed by the first side surface and the second side surface, which are substantially orthogonal to the straight line connecting the plan view center of the transport chamber and the plan view center of the third processing chamber, and the first side surface. It satisfies the relationship that the angles formed by the two side surfaces and the third side surface are different.
For example, of the m side surfaces of the transport chamber, the four side surfaces A, the side surface B, the side surface C and the side surface D are adjacent to each other in this order, and the four side surfaces A, the side surface B, the side surface C and the side surface D are adjacent to each other. If you can connect to the processing room
(1) Side A, Side B and Side C,
(2) Side surface B, side surface C and side surface D
Of the two sets, at least one set of three sides is referred to as a first side surface, a second side surface, and a third side surface, and the first side surface, the second side surface, and the third side surface may satisfy the above relationship. The same applies when five or more side surfaces of the m side surfaces of the transport chamber are adjacent to each other and the five or more side surfaces can be connected to the processing chamber, and at least one set of the first side surfaces and the first side surface is the same. It is sufficient that the above-mentioned relationship is satisfied for the two side surfaces and the third side surface.

Here, the "center of plan view of the transport chamber" means the turning center of the transport mechanism that transports the substrate. Hereinafter, the "center of the transport chamber in a plan view" may be simply referred to as the "center of the transport chamber".
Further, the "center of plan view of the processing chamber" means the center of plan view of a circular mounting table provided inside the processing chamber on which the substrate to be processed is placed. Hereinafter, the "center of the processing chamber in a plan view" may be simply referred to as the "center of the processing chamber".

The difference between the angle α ₁₂ formed by the first side surface and the second side surface and the angle α ₂₃ formed by the second side surface and the third side surface means that α ₂₃ is larger than α ₁₂ . Alternatively, α ₂₃ is smaller than α ₁₂ .
For example, as shown in FIG. 1, when α ₂₃ is smaller than α _{12, a} straight line OR ₁ connecting the center O of the transport chamber 11 and the center R ₁ of the first processing chamber P1 connected to the center O and the transport The angle β ₁₂ formed by the straight line OR ₂ connecting the center R ₂ of the second processing chamber P2 connected to the center O of the chamber is the straight line OR ₂ connected to the center O of the transport chamber 11. It is smaller than the angle β ₂₃ formed by the straight line OR ₃ connecting the center R ₃ of the third processing chamber P ₃ . In this case, the distance between the second processing chamber P2 and the third processing chamber P3 is larger than the distance between the first processing chamber P1 and the second processing chamber P2.
In this way, by making the angle formed by the second side surface and the third side surface smaller than the angle formed by the first side surface and the second side surface, the distance between the second processing chamber and the third processing chamber is increased. The distance between the first processing chamber and the second processing chamber can be reduced.

On the contrary, when α ₂₃ is larger than α ₁₂ , that is, when the angle formed by the second side surface and the third side surface is larger than the angle formed by the first side surface and the second side surface, the first processing chamber P1 and The distance between the second processing chamber P2 and the second processing chamber P2 is larger than the distance between the second processing chamber P2 and the third processing chamber P3.
In this way, by making the angle formed by the second side surface and the third side surface larger than the angle formed by the first side surface and the second side surface, the distance between the first processing chamber and the second processing chamber is increased. The distance between the second processing chamber and the third processing chamber can be reduced.

Therefore, according to the present invention, a wide area in which the distance between adjacent processing chambers is increased is set as a maintenance area, and by performing maintenance work in the maintenance area, the distance between adjacent treatment rooms is equal as in the conventional case. Compared to, maintenance work can be performed in a wider maintenance area. As a result, it is possible to efficiently perform maintenance work, and it is possible to provide a vacuum transfer module having excellent maintainability.
Here, the maintenance area means an area for performing maintenance work on the substrate processing apparatus, and is an area in which parts of the apparatus and measuring instruments are replaced or repaired. Examples of the maintenance work include the work of periodically replacing and repairing parts of the transport chamber, the transport mechanism and the processing chamber, measuring instruments, the valve body of the gate valve G, the O-ring, and the like.

In FIG. 1, the first side surface L1, the second side surface L2, and the third side surface L3 of the transport chamber 11 are referred to in the order of the plan view counterclockwise direction, but the first side surface L1 and the second side surface L1 and the second side surface L3 The same applies to the side surface L2 and the third side surface L3.

In the present invention, the angle α ₁₂ formed by the first side surface and the second side surface, which are two adjacent side surfaces, and the angle formed by the second side surface and the third side surface, which are similarly adjacent two side surfaces. since different from the alpha _23, of the alpha ₁₂ and alpha _23, either one of the angle is greater than the angle in the case of a positive m square, than the angle of the case or the other of the angle of the positive m square Is also small. Therefore, as α ₁₂ and α ₂₃ , a case where one of them is larger than 180 ° × (m-2) / m and the other is smaller than 180 ° × (m-2) / m can be exemplified.

Further, in order to solve the above-mentioned problems, the present invention includes the vacuum transfer module and a processing module connected to the vacuum transfer module, and the processing module is connected to the first side surface. 1 processing chamber, the 2nd processing chamber connected to the 2nd side surface, the 3rd processing chamber connected to the 3rd side surface, the 1st processing chamber, the 2nd processing chamber and the said A substrate including a processing gas supply mechanism for supplying processing gas to a third processing chamber, and an exhaust mechanism for exhausting the inside of the first processing chamber, the second processing chamber, and the third processing chamber. It is also provided as a processing device.

According to the substrate processing apparatus of the present invention, as described above, an area in which the distance between adjacent processing rooms is widened is set as a maintenance area, and by performing maintenance work in the maintenance area, adjacent processing rooms are conventionally used. Maintenance work can be performed in a wider area than when the intervals between them are equal. As a result, the substrate processing apparatus of the present invention can efficiently perform maintenance work and is excellent in maintainability.

In the substrate processing apparatus of the present invention, preferably, the first processing chamber, the second processing chamber, and the third processing chamber are independent processing chambers. Here, the independent processing chamber does not communicate with other processing chambers when the substrate is processed in the processing chamber, and the processing conditions (for example, temperature, pressure, type of processing gas) of the other processing chamber are used. Etc.) means not affected. With such a preferable configuration, it is possible to independently set and control the temperature, pressure, type of processing gas, etc. for each processing chamber, so that each of the plurality of processing chambers is affected by the processing conditions of the other processing chambers. It is possible to process a substrate with stable quality without suffering from the problem. Further, since it is possible to perform different processing for each of a plurality of processing chambers, there is an advantage that the degree of freedom in substrate processing is increased.

Preferably, the processing module further includes a processing chamber pedestal that is movable with respect to the transport chamber, and the angle formed by the first side surface and the second side surface is the second side surface and the third side surface. When the angle formed by the side surface is larger than the angle formed by the side surface, the processing chamber mount mounts the first processing chamber and the second processing chamber, and the angle formed by the second side surface and the third side surface is the said. When the angle formed by the first side surface and the second side surface is larger than the angle formed by the first side surface, the processing chamber pedestal mounts the second processing chamber and the third processing chamber.
According to the preferred configuration, since two processing chambers having a small distance between adjacent processing chambers are mounted on one processing chamber pedestal, the number of processing chamber pedestals of the entire substrate processing apparatus can be reduced. , It is possible to reduce the manufacturing cost of the substrate processing apparatus. Then, a wide area where the distance between adjacent processing rooms is increased is set as a maintenance area, and by performing the maintenance work in the wide maintenance area, the maintenance work can be efficiently performed and the maintainability is excellent.

Preferably, the exhaust mechanism has a vacuum pump, and the inside of the first processing chamber and the second processing chamber mounted on the processing chamber pedestal, or the second mounted on the processing chamber pedestal. The inside of the processing chamber and the third processing chamber is exhausted by one of the vacuum pumps.
According to such a preferable configuration, since the number of installed vacuum pumps can be reduced, it is possible to save the trouble of connecting necessary utilities (for example, electricity, cooling water, etc.) and reduce the number of connection points.

Preferably, the same type is used in the first processing chamber and the second processing chamber mounted on the processing chamber pedestal, or in the second processing chamber and the third processing chamber mounted on the processing chamber pedestal. Is processed.
When different types of treatment are performed for each treatment chamber mounted on one treatment chamber pedestal, it is necessary to provide a different treatment gas supply mechanism for each treatment chamber. However, according to the preferred configuration of the present invention, when the same type of processing is performed, the same processing gas supply mechanism can be provided in two processing chambers mounted on one processing chamber pedestal, which is necessary. It is possible to reduce the manufacturing cost of the substrate processing device by eliminating the trouble of connecting various utilities.

Preferably, when the angle formed by the first side surface and the second side surface is larger than the angle formed by the second side surface and the third side surface, the second treatment on the side facing the third processing chamber A processing chamber measuring device is provided on the side surface of the chamber and the side surface of the third processing chamber facing the second processing chamber, and the angle formed by the second side surface and the third side surface is the first side surface. When the angle formed by the second side surface is larger than the angle formed by the second side surface, the side surface of the first processing chamber facing the second processing chamber and the side surface of the second processing chamber facing the first processing chamber are formed. Processing room measuring equipment is provided.
The processing chamber measuring device referred to here refers to a device that measures the state inside the processing chamber, such as temperature, pressure, and emission analysis.

As described above, when the angle formed by the first side surface and the second side surface is larger than the angle formed by the second side surface and the third side surface, the second processing chamber and the third processing chamber are used. Since the interval is larger than the interval between the first processing chamber and the second processing chamber, the area between the second processing chamber and the third processing chamber where the interval between the processing chambers is large becomes the maintenance area. At this time, of the sides of the second treatment chamber and the third treatment chamber, the side surface of the second treatment chamber on the side facing the third treatment chamber and the side surface of the third treatment chamber on the side facing the second treatment chamber. However, it faces the maintenance area.
Further, when the angle formed by the second side surface and the third side surface is larger than the angle formed by the first side surface and the second side surface, the distance between the first processing chamber and the second processing chamber is set. Since the distance between the second treatment chamber and the third treatment chamber is larger than the distance between the second treatment chamber and the third treatment chamber, the area between the first treatment chamber and the second treatment chamber where the distance between the treatment chambers is large becomes the maintenance area. At this time, of the side surfaces of the first processing chamber and the second processing chamber, the side surface of the first processing chamber on the side facing the second processing chamber and the first processing chamber on the side facing the second processing chamber. Side of will face the maintenance area.
According to the preferred configuration, since the processing room measuring device is provided on the side surface of the processing room facing the maintenance area, maintenance work of the processing room measuring device (for example, periodic calibration, consumables) can be performed from a wide maintenance area. It is possible to carry out maintenance work efficiently and it is excellent in maintainability.

According to the vacuum transfer module and the substrate processing apparatus of the present invention, an area where the distance between adjacent processing rooms is increased is set as a maintenance area, and by performing maintenance work in the maintenance area, the adjacent processing rooms are separated from each other as in the conventional case. Maintenance work can be performed in a wider area than when the intervals are equal. Therefore, according to the present invention, it is possible to efficiently perform maintenance work, and it is possible to provide a vacuum transfer module and a substrate processing apparatus having excellent maintainability.

The schematic plan view of the substrate processing apparatus which concerns on 1st Embodiment of this invention. The schematic plan view of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. The schematic plan view of the substrate processing apparatus which concerns on 3rd Embodiment of this invention. Schematic plan view of a conventional substrate processing apparatus.

Hereinafter, each embodiment of the present invention will be described with reference to the drawings as appropriate.
For convenience of explanation, the dimensions and scale ratio of each part shown in each figure may differ from the actual ones.

<First Embodiment>
First, the configuration of the entire substrate processing apparatus 100 according to the first embodiment of the present invention will be described.
FIG. 1 is a schematic plan view of the substrate processing apparatus 100 according to the first embodiment of the present invention.
As shown in FIG. 1, the substrate processing apparatus 100 according to the present embodiment includes a vacuum transfer module 1 and a processing module 2 connected to the vacuum transfer module 1.
The vacuum transfer module 1 of the present invention has a function of carrying the substrate before processing into the processing chamber 3 and carrying out the processed substrate after processing from the processing chamber 3. As shown in FIG. 1, the vacuum transfer module 1 of the present embodiment is arranged in a transfer chamber 11 having a convex m-square shape (m is an integer of 4 or more) in a plan view and the transfer chamber 11 to convey a substrate. The transport mechanism 12 is provided.
The processing module 2 has a function of processing the substrate. In the present invention, the "treatment" is not particularly limited as long as it is a treatment applied to the substrate, and for example, a treatment such as CVD (chemical vapor deposition), PVD (physical vapor deposition), etching, ashing, and substrate heating / cooling. Types are listed.

[Vacuum transfer module]
First, the vacuum transfer module 1 of the present embodiment will be described.
The plan view shape of the transport chamber 11 included in the vacuum transport module 1 is a convex m-square shape. In the present invention, the convex m-side polygon means a polygon having m on the sides and all internal angles of less than 180 °. Here, the internal angle means the angle inside the polygon among the two angles formed by the two sides of the polygon. Further, a convex m-sided polygon can be said to be a polygon having m vertices and all diagonal lines passing through the inside of the polygon. However, the "convex m-sided polygon" in the present invention is a concept including a shape within a range permitted in the technical field of the present invention, such as the corners of the m-sided polygon being slightly chamfered.
In the present embodiment, as shown in FIG. 1, the plan view shape of the transport chamber 11 is a convex m-square shape when m = 8, that is, a convex octagonal shape.
In the present invention, since the plan view shape of the transport chamber 11 is a convex m-side polygon, the three-dimensional shape of the transport chamber 11 is a pillar body having the convex m-square shape as a bottom surface, a so-called prism.
The lower limit of m is 4. Further, the upper limit of m is not particularly limited, but as m becomes larger, the plan view shape of the transport chamber 11 becomes closer to a circle, and the width of the side surface of the transport chamber 11 becomes shorter. I have no choice but to do it. Further, as m becomes larger, in order to make the width of the side surface of the transport chamber 11 larger than the desired substrate size, the size of the transport chamber must be increased, and as a result, the substrate transport distance of the transport mechanism 12 becomes longer. Become. From this point of view, the upper limit of m is, for example, 20, preferably 12, and more preferably 10.

In the vacuum transfer module 1 of the present embodiment, the substrate is carried from the outside of the transfer chamber 11 (for example, the load lock chamber 9 or the like) to the transfer chamber 11 by the transfer mechanism 12, and the carried-in substrate is carried into the processing chamber 3 by the transfer mechanism 12. The processed substrate that has been processed in the processing chamber 3 is carried out from the processing chamber 3 to the transport chamber 11 by the transport mechanism 12, and the processed substrate that has been carried in is carried out of the transport chamber 11 by the transport mechanism 12 (for example,). , Road lock room 9 etc.).
The transport chamber 11 is a chamber for carrying the substrate into the processing chamber 3 and carrying it out of the processing chamber 3. Since the processing chamber 3 is normally under a vacuum condition and the substrate is carried in and out by communicating the transfer chamber 11 and the processing chamber 3, the transfer chamber 11 is also under a vacuum condition similar to the degree of vacuum of the normal processing chamber 3. ..
As the transport mechanism 12, for example, a single-arm biaxial polar coordinate type (r-axis, θ-axis) vacuum robot that can expand and contract and rotate around the center of rotation is used. The transport mechanism 12 may be a double-armed 2-axis polar coordinate type (r-axis, θ-axis) vacuum robot.

Since the transport chamber 11 has a convex octagonal shape in a plan view, it has eight side surfaces. As shown in FIG. 1, the transport chamber 11 has a processing chamber 3 provided by the processing module 2 and a gate valve on six side surfaces L1, L2, L3, L4, L5 and L6 out of the eight side surfaces. It can be connected via G.
The transport chamber 11 has at least a first side surface, a second side surface, and a third side surface which are adjacent to each other in this order among the eight side surfaces. The first side surface, the second side surface and the third side surface can be connected to the first processing room, the second processing room and the third processing room, respectively.

As shown in FIG. 1, in the transport chamber 11, six side surfaces L1, L2, L3, L4, L5 and L6 of the eight side surfaces are adjacent to each other in this order and can be connected to the processing chamber 3.
(A) When the side surface L1 is the first side surface, the side surface L2 is the second side surface, and the side surface L3 is the third side surface.
(B) When the side surface L2 is the first side surface, the side surface L3 is the second side surface, and the side surface L4 is the third side surface.
(C) When the side surface L3 is the first side surface, the side surface L4 is the second side surface, and the side surface L5 is the third side surface.
(D) The side surface L4 may be the first side surface, the side surface L5 may be the second side surface, and the side surface L6 may be the third side surface.

In the transport chamber 11, as shown in FIG. 1, the first side surface, the second side surface, and the third side surface of each of the above (a) to (d) are the first process connected to the center O of the transport chamber 11. A straight line connecting the center R of the chamber, a straight line connecting the center O of the transport chamber 11 and the center R of the second processing chamber, and the center R of the third processing chamber connected to the center O of the transport chamber 11. They are almost orthogonal to the straight line connecting with. Here, the processing chamber 3 connected to the first side surface is the first processing chamber, the processing chamber 3 connected to the second side surface is the second processing chamber, and the processing chamber 3 connected to the third side surface is the third processing chamber. That is.

Since the first side surface, the second side surface, and the third side surface of the transfer chamber 11 can be connected to the first processing chamber, the second processing chamber, and the third processing chamber, respectively, the substrate processing apparatus 100 including the vacuum transfer module 1 is Of course, the first side surface, the second side surface, and the third side surface include a form in which the first processing chamber, the second processing chamber, and the third processing chamber are connected to each other, and at least one side surface thereof. It also includes a form in which the processing chamber 3 is not connected.

Here, "connectable" to the transport chamber 11 and the processing chamber 3 means that the transport chamber 11 and the processing chamber 3 can be communicated with each other in an airtight state to transport the substrate. Say.
Further, "the side surface is substantially orthogonal to the straight line connecting the plan view center of the transport chamber and the plan view center of the connected processing chamber" means that when the processing chamber 3 is connected to the transport chamber 11, the transport chamber is concerned. A straight line OR (for example, OR ₁ ) in which a side surface (for example, the first side surface) of 11 connects the center O of the transport chamber 11 and the center R (for example, R ₁ ) of the processing chamber 3 (for example, the first processing chamber). It means that they are substantially orthogonal to each other.

In the present invention, "substantially orthogonal" is a concept including not only the case of orthogonality but also the error ε permitted in the technical field of the present invention. For example, the side surface L1 of the conveying chamber 11, when the angle which the straight line OR ₁ forms connecting the center R ₁ of the center O and the processing chamber 3 of the transfer chamber 11 (P1) is 90 °, they are orthogonal There is.
Further, for example, the side L1 of the transfer chamber 11, the center _{R 1} and the angle which the straight line OR ₁ forms connecting the 90 ° ± epsilon center O and the processing chamber 3 of the transfer chamber 11 (P1) (for example, epsilon is If it is greater than 0 ° and less than 5 °, preferably ε is greater than 0 ° and less than 2 °), they are substantially orthogonal. The angle can also be determined within the range of 90 ° ± ε depending on the sealing property of the gate valve G and the gate width capable of transporting the substrate.

As shown in FIG. 1, the plan view center O of the transport chamber 11 in the present embodiment coincides with the turning center of the transport mechanism 12.

When the side surface L1 of the transport chamber 11 is the first side surface, the side surface L2 of the transport chamber 11 is the second side surface, and the side surface L3 of the transport chamber 11 is the third side surface (that is, in the case of (a)), the first side surface L1 The first processing chamber connected to the second side surface L2 is referred to as P1, the second processing chamber connected to the second side surface L2 is referred to as P2, and the third processing chamber connected to the third side surface L3 is referred to as P3, which is the center of the first processing chamber P1. Is referred to as R ₁ , the center of the second processing chamber P2 is referred to as R ₂ , and the center of the third processing chamber P ₃ is referred to as R ₃ . In the present embodiment, the straight line OR ₁ connecting the center R ₁ of the center O and the first processing chamber P1 in the conveying chamber 11 is substantially perpendicular to the first side L1. Similarly, the straight line OR ₂ connecting the center O of the transport chamber 11 and the center R ₂ of the second processing chamber P2 is substantially orthogonal to the second side surface L2, and the center O of the transport chamber 11 and the third processing chamber P3 The straight line OR ₃ connecting the center R _{3 of the above} is substantially orthogonal to the third side surface L3.

In the vacuum transfer module 1, the angle formed by the first side surface and the second side surface is different from the angle formed by the second side surface and the third side surface. In other words
(I) The angle formed by the second side surface and the third side surface is larger than the angle formed by the first side surface and the second side surface, or
(Ii) The angle formed by the second side surface and the third side surface is smaller than the angle formed by the first side surface and the second side surface.
Is one of.

As shown in FIG. 1, the angle α ₂₃ formed by the second side surface L2 and the third side surface L3 is smaller than the angle α ₁₂ formed by the first side surface L1 and the second side surface L2, and in the case of (ii) above. Applicable. At this time, the straight line OR ₁ connecting the center O of the transport chamber 11 and the center R ₁ of the first processing chamber P1 connected to it, and the center R ₂ of the second processing chamber P2 connected to the center O of the transport chamber 11 angle beta ₁₂ in which the straight line OR ₂ forms connecting includes said linear OR _2, and the angle between the straight line OR ₃ forms connecting the center O and the center R ₃ of the third processing chamber connected to the transfer chamber 11 It is smaller than the angle β ₂₃ .

Here, the intersection of the first side surface L1 and the straight line OR ₁ is T ₁ , the intersection of the second side surface L2 and the straight line OR ₂ is T ₂ , and the intersection of the third side surface L3 and the straight line OR ₃ is T ₃ . Let S ₁₂ be the plane viewing intersection where the first side surface L1 and the second side surface L2 are in contact, and S ₂₃ be the plane viewing intersection where the second side surface L2 and the third side surface L3 are in contact. Since the sum of the internal angles of the quadrangle is 360 °, the sum of the internal angles of the quadrangle OT ₁ S ₁₂ T ₂ and the quadrangle OT ₂ S ₂₃ T ₃ is 360 °. Since the first side surface and the straight line OR ₁ , the second side surface and the straight line OR ₂ , and the third side surface and the straight line OR ₃ are orthogonal to each other, ∠OT ₁ S ₁₂ , ∠OT ₂ S ₁₂ , ∠OT ₂ S ₂₃ and ∠ Since both OT ₃ S ₂₃ are 90 °,
β ₁₂ = 360 ° -90 ° x 2-α ₁₂ = 180 ° -α ₁₂ (1)
β ₂₃ = 360 ° -90 ° x 2-α ₂₃ = 180 ° -α ₂₃ (2)
Will be.

As described above, the angle α ₂₃ formed by the second side surface L2 and the third side surface L3 is smaller than the angle α ₁₂ formed by the first side surface L1 and the second side surface L2, and therefore the equations (1) and (2) ), It is derived that the angle β ₁₂ formed by the straight line OR ₁ and the straight line OR ₂ is smaller than the angle β ₂₃ formed by the straight line OR ₂ and the straight line OR ₃ . That is, the magnitude relationship between the angle α ₁₂ formed by the first side surface L1 and the second side surface L2 and the angle α ₂₃ formed by the second side surface L2 and the third side surface L3, and the straight line OR ₁ and the straight line OR ₂ are formed. The magnitude relationship between the angle β ₁₂ and the angle β ₂₃ formed by the straight line OR ₂ and the straight line OR ₃ is opposite.

Since the angle β ₁₂ formed by the straight line OR ₁ and the straight line OR ₂ is smaller than the angle β ₂₃ formed by the straight line OR ₂ and the straight line OR ₃ , the distance between the second processing chamber P2 and the third processing chamber P3 is the first. It is larger than the distance between the 1 processing chamber P1 and the 2nd processing chamber P2. That is, the angle α ₁₂ formed by the first side surface L1 and the second side surface L2 and the angle α ₂₃ formed by the second side surface L2 and the third side surface L3 are different, so that the first processing chamber P1 and the second surface are different. The distance between the processing chamber P2 and the distance between the second processing chamber P2 and the third processing chamber P3 is different, and one of them is large and the other is small.
Here, the "distance" between one processing chamber and another processing chamber means the distance of a straight line connecting the centers of the connected processing chambers. For example, the interval between the processing chamber P1 and the processing chamber P2 is the center R ₁ of the connected processing chamber P1, a distance of a straight line connecting the center R ₂ of the connected processing chamber P2, a processing chamber P2 processing distance between the chamber P3 is provided with a center R ₂ of the connected processing chamber P2, a distance of a straight line connecting the center R ₃ of the connected processing chamber P3. The same applies to other processing rooms.

The distance between the second processing chamber P2 and the third processing chamber P3 is larger than the distance between the first processing chamber P1 and the second processing chamber P2. That is, the distance between adjacent processing chambers should be increased as compared with the case where the plan view shape of the transport chamber is a regular polygon as in the conventional case, that is, the angles formed by the adjacent side surfaces of the transport chamber are all equal. Can be done. Therefore, the area between the second processing chamber P2 and the third processing chamber P3 (the region between the side surfaces of the second processing chamber P2 and the third processing chamber P3) is wider than before. The area between the second processing chamber P2 and the third processing chamber P3, which is wider than the conventional one, is designated as the maintenance area M. FIG. 1 shows the maintenance area M of this embodiment with innumerable dots.

Up to this point, the case of (a), that is, the case where the first side surface is L1, the second side surface is L2, and the third side surface is L3 has been described, but the same applies to the other cases (b) to (d). is there.
In the case of (b), that is, when the first side surface is L2, the second side surface is L3, and the third side surface is L4, the angle formed by the second side surface L3 and the third side surface L4 is as shown in FIG. α ₃₄ is larger than the angle α ₂₃ formed by the first side surface L2 and the second side surface L3. Therefore, the straight line OR ₂ connecting the center O of the transport chamber 11 and the center R ₂ of the first processing chamber P2 connected to the center O of the transport chamber 11 and the center R ₃ of the second processing chamber P3 connected to the center O of the transport chamber 11 are connected. angle beta ₂₃ formed between the straight line OR ₃ connecting the, the linearly OR _3, the angle formed by the straight line OR ₄ connecting the center _{R 3} of the center O and connected to said third processing chamber P4 of the transfer chamber 11 beta Greater than ₃₄ . Therefore, the distance between the first processing chamber P2 and the second processing chamber P3 is larger than the distance between the second processing chamber P3 and the third processing chamber P4. As can be seen from FIG. 1, since the distance between the second processing chamber P2 and the third processing chamber P3 is larger than that in the conventional case, the area between the second processing chamber P2 and the third processing chamber P3 is also wider than before. Become. The area between the second processing chamber P2 and the third processing chamber P3, which is wider than the conventional one, is designated as the maintenance area M. The maintenance area M in this case is the same as in the case of (a) above.

Subsequently, in the case of the above (c), that is, when the first side surface is L3, the second side surface is L4, and the third side surface is L5, the angle α ₄₅ formed by the second side surface L4 and the third side surface L5 is determined. It is smaller than the angle α ₃₄ formed by the first side surface L3 and the second side surface L4. Therefore, as in the case of (a) above, the distance between the second processing chamber P4 and the third processing chamber P5 is larger than the distance between the first processing chamber P3 and the second processing chamber P4. Since the distance between the second processing chamber P4 and the third processing chamber P5 is larger than that of the conventional one, the area between the second processing chamber P4 and the third processing chamber P5 is wider than the conventional one. The area between the second processing chamber P4 and the third processing chamber P5, which is wider than the conventional one, is designated as the maintenance area M.

The same applies to the case of (d), that is, when the first side surface is L4, the second side surface is L5, and the third side surface is L6. In this case, the angle α ₅₆ formed by the second side surface L5 and the third side surface L6 is larger than the angle α ₄₅ formed by the first side surface L4 and the second side surface L5. Therefore, as in the case of (b) above, the distance between the first processing chamber P4 and the second processing chamber P5 is larger than the distance between the second processing chamber P5 and the third processing chamber P6. Since the distance between the first processing chamber P4 and the second processing chamber P5 is larger than that of the conventional one, the area between the first processing chamber P4 and the second processing chamber P5 is wider than the conventional one. The area between the first processing chamber P4 and the second processing chamber P5, which is wider than the conventional one, is designated as the maintenance area M. The maintenance area M in this case is the same as in the case of (c) above.

As described above, the straight line connecting the center O of the transport chamber 11 and the center of the first processing chamber connected, the straight line connecting the center O of the transport chamber 11 and the center of the second processing chamber connected, and the transport chamber. The angle formed by the first side surface and the second side surface, and the second side surface and the third side surface are substantially orthogonal to the straight line connecting the center O of 11 and the center of the third processing chamber connected to the center O. When the processing chamber 3 is connected to the vacuum transfer module 1 of the present embodiment because the angle formed by the side surface is different, the distance between the adjacent processing chambers 3 can be increased. As a result, a wide area in which the distance between the adjacent processing chambers 3 is increased is designated as the maintenance area M, and by performing the maintenance work in the maintenance area M, the distance between the adjacent processing rooms is equal as in the conventional case. Therefore, maintenance work can be performed in a wider maintenance area. As a result, it is possible to efficiently perform maintenance work, and it is possible to provide a vacuum transfer module 1 having excellent maintainability.

Since the angle formed by the first side surface and the second side surface, which are two adjacent side surfaces of the transport chamber 11, is different from the angle formed by the second side surface and the third side surface, which are also two adjacent side surfaces. The angle formed by either one is larger than the angle formed by the regular m-square, and the angle formed by the other is smaller than the angle formed by the regular m-square. Therefore, of the angle formed by the first side surface and the second side surface and the angle formed by the second side surface and the third side surface, one of them is larger than 180 ° × (m-2) / m and the other is 180. Less than ° × (m-2) / m.

In the present embodiment, since m = 8, the angle formed by the first side surface and the second side surface, which are two adjacent side surfaces, and the second side surface and the third side surface, which are similarly adjacent two side surfaces, are formed. One of the angles formed is larger than 180 ° × (8-2) / 8 = 135 °, and the other is smaller than 180 ° × (8-2) / 8 = 135 °. In the present embodiment, the angles α ₁₂ , α _34, and α ₅₆ formed by the first side surface and the second side surface, which are two adjacent sides, are 146 °, which is larger than 135 ° and are adjacent to each other. The angles α ₂₃ and α ₄₅ formed by the second side surface and the third side surface, which are the side surfaces, are 124 °, which is smaller than 135 °.

[Processing module]
Subsequently, the processing module 2 will be described.
As shown in FIG. 1, the processing module 2 includes a processing chamber 3 (P1 to P6), a processing gas supply mechanism 5 for supplying the processing gas to the processing chamber 3, and an exhaust mechanism 6 for exhausting the inside of the processing chamber 3. And.
The processing chamber 3 is a chamber for processing the substrate. In the treatment chamber 3, the atmosphere is blocked and a vacuum atmosphere corresponding to the treatment can be maintained.
The processing gas supply mechanism 5 is a mechanism having a function of supplying the processing gas to the processing chamber 3. That is, the processing gas is supplied from the gas cylinder to the processing chamber 3 by the processing gas supply mechanism 5. The processing gas supply mechanism 5 includes, for example, a pipe, a valve, a vaporizer, a flow meter, a pressure gauge, and the like.
Further, the exhaust mechanism 6 is a mechanism having a function of exhausting the gas inside the processing chamber 3 to the outside of the processing chamber 3, and for example, a vacuum pump that exhausts the inside of the processing chamber 3 to create a vacuum state. , Piping, valves, etc.

The processing module 2 includes a first processing chamber connected to the first side surface, a second processing chamber connected to the second side surface, and a third processing chamber connected to the third side surface.
Specifically, as shown in FIG.
(A) When the side surface L1 is the first side surface, the side surface L2 is the second side surface, and the side surface L3 is the third side surface, the processing chamber P1 connected to the side surface L1 is the first processing chamber and is connected to the side surface L2. The processing chamber P2 is the second processing chamber, and the processing chamber P3 connected to the side surface L3 is the third processing chamber.
(B) When the side surface L2 is the first side surface, the side surface L3 is the second side surface, and the side surface L4 is the third side surface, the processing chamber P2 connected to the side surface L2 is the first processing chamber and is connected to the side surface L3. The processing chamber P3 is the second processing chamber, and the processing chamber P4 connected to the side surface L4 is the third processing chamber.
(C) When the side surface L3 is the first side surface, the side surface L4 is the second side surface, and the side surface L5 is the third side surface, the processing chamber P3 connected to the side surface L3 is the first processing chamber and is connected to the side surface L4. The processing chamber P4 is the second processing chamber, and the processing chamber P5 connected to the side surface L5 is the third processing chamber.
(D) When the side surface L4 is the first side surface, the side surface L5 is the second side surface, and the side surface L6 is the third side surface, the processing chamber P4 connected to the side surface L4 is the first processing chamber and is connected to the side surface L5. The processing chamber P5 is the second processing chamber, and the processing chamber P6 connected to the side surface L6 is the third processing chamber.

The processing chambers 3 (P1 to P6) are connected to the side surfaces L1 to L6 of the transport chamber 11 to which the treatment chamber can be connected via a gate valve G that separates the transport chamber 11 and the treatment chamber 3.
In the present embodiment, as shown in FIG. 1, the processing chamber 3 is connected to all the side surfaces of the transport chamber 11 that can be connected to the processing chamber, but the processing chamber 3 can be connected to the processing chamber. A mode in which the processing chamber 3 is not connected to a part of the side surface of the transport chamber 11 is also included in the scope of the present invention.

Of the side surfaces of the transport chamber 11, on the side surfaces L7 and L8 other than the side surfaces to which the processing chamber can be connected, a load lock chamber 9 for storing the unprocessed substrate and the processed substrate is provided as a gate valve G in the transport chamber 11. It is provided through. Inside one of the load lock chambers 9, a cassette containing the substrate before processing is provided, and inside the other load lock chamber 9, a cassette containing the processed substrate is provided. The side surfaces L7 and L8 may also be connectable to the processing chamber.

The first processing chamber, the second processing chamber, and the third processing chamber (processing chambers 3 (P1 to P6)) are independent processing chambers. That is, the first processing chamber, the second processing chamber, and the third processing chamber do not communicate with the other processing chambers when the substrate is processed in each processing chamber, and the processing conditions of the other processing chambers (for example, for example). Not affected by temperature, pressure, type of processing gas, etc.). With this configuration, it is possible to independently set and control the temperature, pressure, type of processing gas, etc. for each processing chamber 3, so that each of the plurality of processing chambers is affected by the processing conditions of the other processing chambers. It is possible to process a substrate with stable quality without suffering from the problem. Further, since it is possible to perform different types of processing in each of a plurality of processing chambers, there is an advantage that the degree of freedom in substrate processing is increased.

The processing module 2 includes a processing chamber pedestal 7 that is movable with respect to the transport chamber 11. When the angle formed by the second side surface and the third side surface is smaller than the angle formed by the first side surface and the second side surface, the processing chamber pedestal 7 performs the first processing chamber and the second processing. When the angle formed by the second side surface and the third side surface is larger than the angle formed by the first side surface and the second side surface, the processing chamber pedestal 7 is the first. It is equipped with two processing chambers and the third processing chamber. In the present embodiment, the processing chambers P1 and P2, the processing chambers P3 and P4, and the processing chambers P5 and P6 are each mounted on one processing chamber pedestal 7, and each processing chamber pedestal 7 approaches the transport chamber 11. It can be moved in the direction and in the direction away from the transport chamber 11.

By mounting two processing chambers 3 (first and second processing chambers or second and third processing chambers) having a small distance between adjacent processing chambers 3 on one processing chamber pedestal 7, a substrate is provided. Since the number of the processing chamber pedestals 7 in the entire processing device 100 can be reduced, it is also possible to reduce the manufacturing cost of the substrate processing device 100. Then, a wide area where the distance between adjacent processing chambers is large is designated as a maintenance area M, and the maintenance work can be performed efficiently in the wide maintenance area M.

As shown in FIG. 1, since the two adjacent processing chambers 3 move in different directions with respect to the transport chamber 11, one of the two processing chambers 3 can at least move on the processing chamber pedestal 7. is there. When both of the two processing chambers 3 are fixed to the processing chamber pedestal 7, the processing chamber pedestal 7 is moved in a direction closer to the transport chamber 11 and the processing chamber 3 is connected to the vacuum transfer module 1 (conveyor chamber 11). Since the approaching directions of the two processing chambers 3 are different, it is difficult to connect the two processing chambers 3 and the transport chamber 11 simply by moving the processing chamber pedestal 7 in the direction approaching the transport chamber 11. On the other hand, when both of the two processing chambers 3 can be moved on the processing chamber pedestal 7, the processing chamber 3 can be easily connected to the transport chamber 11, but the processing chamber pedestal 7 to the transport chamber 11 can be easily connected for each connection. It becomes difficult to determine the position. That is, it becomes difficult to reproduce the positional relationship of the processing chamber pedestal 7 with respect to the transport chamber 11. If either one of the two processing chambers 3 can be moved on the processing chamber pedestal 7 as in the present embodiment, the one processing chamber 3 fixed to the processing chamber pedestal 7 is connected to the transport chamber 11. By doing so, the position of the processing chamber pedestal 7 is naturally determined, and the reproducibility of the positional relationship of the processing chamber pedestal 7 with respect to the transport chamber 11 can be easily obtained. After the position of the processing chamber pedestal 7 is determined, it is easy to connect the other processing chamber 3 movable on the processing chamber pedestal 7 to the transport chamber 11.

The exhaust mechanism 6 has a vacuum pump, and the insides of the processing chambers P1 and P2, the insides of the processing chambers P3 and P4, and the insides of the processing chambers P5 and P6 are exhausted by one vacuum pump.
When exhausting with a vacuum pump for each processing chamber, six vacuum pumps are required, but compared to that case, the inside of the processing chambers P1 and P2 mounted on the same processing chamber pedestal 7, the processing chambers P3 and Since the inside of P4 and the insides of the processing chambers P5 and P6 are exhausted by one vacuum pump, it is possible to save the trouble of connecting the necessary utilities and reduce the number of connection points.

In FIG. 1, the processing gas supply mechanism 5 and the exhaust mechanism 6 are mounted on the processing chamber pedestal 7. However, the processing gas supply mechanism 5 or the exhaust mechanism 6 is not mounted on the processing chamber pedestal 7, and may be provided at another location.

Different types of processing may be performed in the respective processing chambers P1 to P6, or the processing chambers P1 and P2, the processing chambers P3 and P4, and the processing chambers P5 and P6 mounted on the same processing chamber pedestal 7, respectively. The same type of processing may be performed in, or the same type of processing may be performed in all the processing chambers P1 to P6.

When different types of processing are performed for each processing room 3 mounted on one processing room pedestal 7, it is necessary to provide a different processing gas supply mechanism 5 for each processing room 3. In other words, it is necessary to provide six different processing gas supply mechanisms 5 for each of the processing chambers P1 to P6.
However, according to the present embodiment, the same processing gas is used for each of the two processing chambers P1 and P2, the processing chambers P3 and P4, and the processing chambers P5 and P6 mounted on the one processing chamber pedestal 7. Since the supply mechanism 5 can be provided, the number of the processing gas supply mechanism 5 can be reduced to three, and as a result, the trouble of connecting the necessary utilities can be saved and the manufacturing cost of the substrate processing apparatus 100 can be reduced. It is possible to reduce it.

The processing chamber 3 is provided with a processing chamber measuring device 8. When the angle formed by the second side surface and the third side surface is smaller than the angle formed by the first side surface and the second side surface, the side surface of the second processing chamber facing the third processing chamber and the second processing chamber The processing chamber measuring device 8 is provided on the side surface of the third processing chamber on the side facing the surface, and the angle formed by the second side surface and the third side surface is larger than the angle formed by the first side surface and the second side surface. When it is large, the processing chamber measuring device 8 is provided on the side surface of the first processing chamber on the side facing the second processing chamber and the side surface of the second processing chamber on the side facing the first processing chamber.

Specifically, as shown in FIG. 1, processing is performed on the side surface of the third processing chamber P3 on the side facing the second processing chamber P2 and the side surface of the second processing chamber P2 on the side facing the third processing chamber P3. A chamber measuring device 8 is provided, and each of the processing chamber measuring devices 8 is provided on the side surface of the processing chamber facing the maintenance area M. Further, the processing chamber measuring device 8 is also provided on the side surface of the second processing chamber P5 on the side facing the first processing chamber P4 and the side surface of the first processing chamber P4 on the side facing the second processing chamber P5. Each of the processing chamber measuring devices 8 is provided on the side surface of the processing chamber facing the maintenance area M.
Therefore, since the maintenance work of the processing room measuring device 8 (for example, periodic calibration, replacement of consumables, etc.) is performed from the wide maintenance area M, the maintenance work of the processing room measuring device 8 can be efficiently performed. , Excellent maintainability.

Hereinafter, other embodiments of the present invention will be described, but in the description thereof, configurations and effects different from those of the above-described embodiments will be mainly described, and for similar configurations and the like, the above-mentioned terms and symbols will be used as they are. The description of the configuration will be omitted.

<Second Embodiment>
FIG. 2 shows a schematic plan view of the substrate processing apparatus 100 according to the second embodiment of the present invention. The plan view shape of the transport chamber 11 included in the vacuum transport module 1 in the present embodiment is a convex m-square shape, that is, a convex quadrangle when m = 4.
In the second embodiment shown in FIG. 2, the side surface L1 of the transport chamber 11 is the first side surface, the side surface L2 is the second side surface, and the side surface L3 is the third side surface. The angle α ₁₂ formed by the first side surface L1 and the second side surface L2 and the angle α ₂₃ formed by the second side surface L2 and the third side surface L3 are different, and α ₂₃ is larger than α ₁₂ . At this time, for the same reason as described above, the distance between the first processing chamber P1 and the second processing chamber P2 is larger than the distance between the second processing chamber P2 and the third processing chamber P3. Therefore, the area between the first processing room P1 and the second processing room P2 is designated as the maintenance area M.
A load lock chamber 9 can be connected to the side surface L4 of the transport chamber 11.

<Third Embodiment>
FIG. 3 shows a schematic plan view of the substrate processing apparatus 100 according to the third embodiment of the present invention. The plan-view shape of the transport chamber 11 included in the vacuum transport module 1 in the present embodiment is a convex m-side polygon, that is, a convex nonagon shape when m = 9.
Also in the third embodiment shown in FIG. 3, the angle formed by the first side surface and the second side surface of the transport chamber 11 and the angle formed by the second side surface and the third side surface are different. In particular,
The angle α ₂₃ formed by the second side surface L2 and the third side surface L3 is larger than the angle α ₁₂ formed by the first side surface L1 and the second side surface L2.
The angle α ₃₄ formed by the second side surface L3 and the third side surface L4 is smaller than the angle α ₂₃ formed by the first side surface L2 and the second side surface L3.
The angle α ₄₅ formed by the second side surface L4 and the third side surface L5 is larger than the angle α ₃₄ formed by the first side surface L3 and the second side surface L4.
The angle α ₅₆ formed by the second side surface L5 and the third side surface L6 is smaller than the angle α ₄₅ formed by the first side surface L4 and the second side surface L5.
The angle α ₆₇ formed by the second side surface L6 and the third side surface L7 is larger than the angle α ₅₆ formed by the first side surface L5 and the second side surface L6.
At this time, for the same reason as described above, the distance between the processing room P1 and the processing room P2, the distance between the processing room P3 and the processing room P4, and the distance between the processing room P5 and the processing room P6 are other than that. It is larger than the distance between adjacent processing rooms.
Therefore, the area between the processing chamber P1 and the processing chamber P2, the region between the processing chamber P3 and the processing chamber P4, and the region between the processing chamber P5 and the processing chamber P6 are designated as the maintenance region M.
The load lock chamber 9 can be connected to the side surfaces L8 and L9 of the transport chamber 11.

1 Vacuum transfer module 11 Transfer room 12 Transfer mechanism 2 Processing module 3 Processing room 4 Mounting stand 5 Processing gas supply mechanism 6 Exhaust mechanism 7 Processing room stand 8 Processing room Measuring equipment 9 Load lock room 100 Board processing device M Maintenance area G Gate valve

Claims (8)

A transport chamber whose plan view shape is a convex m-square (m is an integer of 4 or more),
It is provided in the transport chamber and has a transport mechanism for transporting the substrate.
Of the m side surfaces of the transport chamber, at least the first side surface, the second side surface, and the third side surface adjacent to each other in this order are the first treatment chamber and the second treatment chamber in which the substrate transported by the transfer mechanism is processed. And the straight line connecting the plan view center of the first processing chamber connected to the plan view center of the transport chamber, and the plan view center connected to the transport chamber, respectively, which can be connected to the third processing chamber. The straight line connecting the center of the plan view of the second processing chamber and the straight line connecting the center of the plan view of the transport chamber and the center of the plan view of the third processing chamber are substantially orthogonal to each other.
A vacuum transfer module characterized in that the angle formed by the first side surface and the second side surface is different from the angle formed by the second side surface and the third side surface. One of the angle formed by the first side surface and the second side surface and the angle formed by the second side surface and the third side surface is larger than 180 ° × (m-2) / m. The vacuum transfer module according to claim 1, wherein either one is smaller than 180 ° × (m-2) / m. The vacuum transfer module according to claim 1 or 2.
A processing module connected to the vacuum transfer module is provided.
The processing module
The first processing chamber connected to the first side surface, the second processing chamber connected to the second side surface, and the third processing chamber connected to the third side surface.
A processing gas supply mechanism for supplying processing gas to the first processing chamber, the second processing chamber, and the third processing chamber,
A substrate processing apparatus including the first processing chamber, the second processing chamber, and an exhaust mechanism for exhausting the inside of the third processing chamber. The substrate processing apparatus according to claim 3, wherein the first processing chamber, the second processing chamber, and the third processing chamber are independent processing chambers. The processing module further comprises a processing chamber pedestal that is movable relative to the transport chamber.
When the angle formed by the first side surface and the second side surface is larger than the angle formed by the second side surface and the third side surface, the processing chamber pedestal is the first processing chamber and the second processing chamber. And is installed,
When the angle formed by the second side surface and the third side surface is larger than the angle formed by the first side surface and the second side surface, the processing chamber stand is the second processing chamber and the third processing chamber. The substrate processing apparatus according to claim 3 or 4, wherein the substrate processing apparatus is equipped with the above. The exhaust mechanism has a vacuum pump
The inside of the first processing chamber and the second processing chamber mounted on the processing chamber pedestal, or the inside of the second processing chamber and the third processing chamber mounted on the processing chamber pedestal is 1. The substrate processing apparatus according to claim 5, wherein the vacuum pump exhausts the gas. The same type of processing is performed in the first processing chamber and the second processing chamber mounted on the processing chamber pedestal, or in the second processing chamber and the third processing chamber mounted on the processing chamber pedestal. The substrate processing apparatus according to claim 5 or 6, wherein the substrate processing apparatus is performed. When the angle formed by the first side surface and the second side surface is larger than the angle formed by the second side surface and the third side surface, the side surface of the second processing chamber facing the third processing chamber , A processing chamber measuring device is provided on the side surface of the third processing chamber on the side facing the second processing chamber.
When the angle formed by the second side surface and the third side surface is larger than the angle formed by the first side surface and the second side surface, the side surface of the first processing chamber facing the second processing chamber The substrate processing apparatus according to any one of claims 3 to 7, wherein a processing chamber measuring device is provided on the side surface of the second processing chamber on the side facing the first processing chamber.

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