JP6771657B2 - 赤外線面放射源 - Google Patents
赤外線面放射源 Download PDFInfo
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- JP6771657B2 JP6771657B2 JP2019511988A JP2019511988A JP6771657B2 JP 6771657 B2 JP6771657 B2 JP 6771657B2 JP 2019511988 A JP2019511988 A JP 2019511988A JP 2019511988 A JP2019511988 A JP 2019511988A JP 6771657 B2 JP6771657 B2 JP 6771657B2
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- radiation source
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/24—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor being self-supporting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/262—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an insulated metal plate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/003—Heaters using a particular layout for the resistive material or resistive elements using serpentine layout
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/007—Heaters using a particular layout for the resistive material or resistive elements using multiple electrically connected resistive elements or resistive zones
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/032—Heaters specially adapted for heating by radiation heating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Description
・非晶質のマトリクス成分は、重量および体積において複合材料の最大割合を占める。非晶質のマトリクス成分は、複合材料の機械的特性および化学的特性、たとえば複合材料の耐温度性、強度および腐食特性等を決定する重要なものである。マトリクス成分が非晶質であること(有利にはガラスから成ること)により、本発明の赤外線面放射源の特殊な用途の場合、支持体の幾何学的形状を、結晶質の材料から成る支持体と比較してより簡単に要求に合わせて調整することができる。
αλ=ελ (1)
ελ=1−Rgh−Tgh (2)
Claims (11)
- 加熱面を有する支持体を備えた赤外線面放射源であって、
前記支持体はさらに、前記支持体の導体路搭載面上に設けられた導体路を備えており、
前記導体路は、通電時に発熱する導電性の抵抗材料から成り、
前記導体路は、第1の面出力を生成するための第1の導体路部分と、前記第1の面出力とは異なる第2の面出力を生成するための第2の導体路部分と、を含む、赤外線面放射源において、
前記支持体は、非晶質のマトリクス成分と半導体材料の形態の添加成分とを含む複合材料を含み、
前記第1の導体路部分および前記第2の導体路部分は、直列接続されており、
前記第1の導体路部分および前記第2の導体路部分の搭載密度および/または導体断面積は、互いに異なり、
前記導体路搭載面は、縁部領域と中央領域とを有し、
前記第1の導体路部分は、前記第2の導体路部分より高い面出力を有し、前記縁部領域に割り当てられており、
前記第2の導体路部分は、前記中央領域に割り当てられている、
ことを特徴とする赤外線面放射源。 - 前記支持体の全部は、前記複合材料から作成されており、
前記複合材料は、電気絶縁体である、
請求項1記載の赤外線面放射源。 - 前記複合材料の少なくとも前記導体路搭載面の領域は、電気絶縁性材料から成る層によって覆われている、
請求項1記載の赤外線面放射源。 - 前記添加成分の重量割合は、1%と5%との間の範囲または1.5%と3.5%との間の範囲である、
請求項1から3までのいずれか1項記載の赤外線面放射源。 - 前記導体路は、焼成された厚膜層として構成されている、または、前記導体路と前記支持体とが互いに永久接合されるように前記導体路は成形品として前記支持体の表面に付着されている、
請求項1から4までのいずれか1項記載の赤外線面放射源。 - 前記導体路は、25%から85%の範囲の搭載密度を有する線パターンとして構成されている、
請求項1から5までのいずれか1項記載の赤外線面放射源。 - 前記導体路は、前記第1の導体路部分において0.01から0.03mm2の範囲の導体断面積を有し、
前記導体路は、前記第2の導体路部分において0.025から0.5mm2の範囲の導体断面積を有する、
請求項1から6までのいずれか1項記載の赤外線面放射源。 - 前記導体路は複数の第1の導体路部分と複数の第2の導体路部分とを有し、第1の導体路部分と第2の導体路部分とは交互に設けられている、
請求項1から7までのいずれか1項記載の赤外線面放射源。 - 前記第1の導体路部分と前記第2の導体路部分との間に、面出力勾配を生じさせるための第3の導体路部分が配置されている、
請求項1から8までのいずれか1項記載の赤外線面放射源。 - 前記加熱面は、200kW/m2から250kW/m2の範囲の照射出力を有する、
請求項1から9までのいずれか1項記載の赤外線面放射源。 - 半導体材料の形態の前記添加成分は、前記マトリクス成分中に貯蔵され、前記非晶質のマトリクス成分中に分散された固有相となる、
請求項1から10までのいずれか1項記載の赤外線面放射源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016118137.4 | 2016-09-26 | ||
DE102016118137.4A DE102016118137A1 (de) | 2016-09-26 | 2016-09-26 | Infrarotflächenstrahler |
PCT/EP2017/071086 WO2018054629A1 (de) | 2016-09-26 | 2017-08-22 | Infrarotflächenstrahler |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019530144A JP2019530144A (ja) | 2019-10-17 |
JP6771657B2 true JP6771657B2 (ja) | 2020-10-21 |
Family
ID=59686957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019511988A Active JP6771657B2 (ja) | 2016-09-26 | 2017-08-22 | 赤外線面放射源 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20190208579A1 (ja) |
EP (1) | EP3516925B1 (ja) |
JP (1) | JP6771657B2 (ja) |
KR (1) | KR102276922B1 (ja) |
CN (1) | CN109716858A (ja) |
DE (1) | DE102016118137A1 (ja) |
TW (1) | TWI662858B (ja) |
WO (1) | WO2018054629A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018125304A1 (de) * | 2018-10-12 | 2020-04-16 | Heraeus Noblelight Gmbh | Heizeinrichtung mit einem Infrarot-Flächenstrahler |
CN110940695B (zh) * | 2019-11-28 | 2022-04-26 | 航天特种材料及工艺技术研究所 | 一种热量汇聚装置 |
CN110907490B (zh) * | 2019-11-28 | 2022-02-11 | 航天特种材料及工艺技术研究所 | 一种高导热材料的热导率测试装置及方法 |
CN110907491B (zh) * | 2019-11-28 | 2022-06-28 | 航天特种材料及工艺技术研究所 | 一种低导热材料高温热导率测试装置 |
CN110933784B (zh) * | 2019-11-28 | 2022-02-15 | 航天特种材料及工艺技术研究所 | 一种一维传热高温均匀加热板及加热装置 |
CN110940696B (zh) * | 2019-11-28 | 2022-04-26 | 航天特种材料及工艺技术研究所 | 一种用于热导率测试的均温性加热装置 |
CN110907493B (zh) * | 2019-11-28 | 2022-05-27 | 航天特种材料及工艺技术研究所 | 一种高温热导率的测试方法 |
US20210345456A1 (en) * | 2020-04-30 | 2021-11-04 | Taiwan Nano & Micro-Photonics Co., Ltd. | Narrow band infrared emitter through thermal manner |
CN111935914A (zh) * | 2020-10-09 | 2020-11-13 | 浙江嘉美光电科技有限公司 | 光学基板上贵金属膜层的加工方法 |
CN112929998B (zh) * | 2021-03-10 | 2023-03-31 | 盐城嘉腾机电有限公司 | 一种加热板 |
CN112867293A (zh) * | 2021-03-10 | 2021-05-28 | 盐城嘉腾机电有限公司 | 一种压合机 |
CN113086210B (zh) * | 2021-04-08 | 2023-05-23 | 中国商用飞机有限责任公司 | 一种多分区的三相电加热单元 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE486857A (ja) * | 1948-01-29 | |||
JP2676405B2 (ja) * | 1989-04-25 | 1997-11-17 | 信越石英株式会社 | 半導体製造装置若しくは治具用石英ガラス及びその製造方法 |
EP0495770B1 (de) * | 1991-01-16 | 1995-07-12 | Friedrich Hoffmann | Infrarotstrahler |
JP2000058237A (ja) * | 1998-06-05 | 2000-02-25 | Ngk Spark Plug Co Ltd | セラミックヒ―タ及びそれを用いた酸素センサ |
JP2002280151A (ja) * | 2001-03-21 | 2002-09-27 | Hattori Heating Kogyo Kk | セラミック塗装ヒータ及びその製造方法 |
JP3584231B2 (ja) * | 2001-10-04 | 2004-11-04 | 啓行 大野 | 面状ヒーター及び温熱健康器 |
DE20202810U1 (de) * | 2002-02-22 | 2002-05-02 | Rupp Johann Alexander | Elektrischer Flächenheizkörper mit beheizbarer Deckschicht |
US8536496B2 (en) * | 2004-09-15 | 2013-09-17 | Watlow Electric Manufacturing Company | Adaptable layered heater system |
DE102004058077A1 (de) * | 2004-12-01 | 2006-06-08 | Heraeus Noblelight Gmbh | CFC-Heizstrahler |
US8395096B2 (en) * | 2009-02-05 | 2013-03-12 | Sandvik Thermal Process, Inc. | Precision strip heating element |
CN101538151A (zh) * | 2009-04-17 | 2009-09-23 | 江苏省陶瓷研究所有限公司 | 高红外辐射率堇青石陶瓷基片及制备工艺和高红外辐射率电热复合陶瓷发热片 |
CN201700850U (zh) * | 2009-11-24 | 2011-01-12 | 李光 | 生理保健电热毯 |
JP5714176B2 (ja) * | 2011-04-12 | 2015-05-07 | サン−ゴバン グラス フランスSaint−Gobain Glass France | 電気的に加熱可能な支持体及び平面状加熱素子並びにその製造方法 |
US20140314396A1 (en) * | 2013-04-22 | 2014-10-23 | Chih-Ming Hsu | Electrothermal element |
LU92270B1 (en) * | 2013-08-22 | 2015-02-23 | Iee Sarl | Foil heater eg for a heating panel |
US9957431B2 (en) * | 2013-11-11 | 2018-05-01 | Heraeus Quarzglas Gmbh & Co. Kg | Composite material, heat-absorbing component, and method for producing the composite material |
DE102014108356A1 (de) * | 2014-06-13 | 2015-12-17 | Innovative Sensor Technology Ist Ag | Planares Heizelement mit einer PTC-Widerstandsstruktur |
-
2016
- 2016-09-26 DE DE102016118137.4A patent/DE102016118137A1/de not_active Ceased
-
2017
- 2017-08-18 TW TW106128097A patent/TWI662858B/zh not_active IP Right Cessation
- 2017-08-22 WO PCT/EP2017/071086 patent/WO2018054629A1/de active Application Filing
- 2017-08-22 CN CN201780056840.1A patent/CN109716858A/zh active Pending
- 2017-08-22 US US16/334,195 patent/US20190208579A1/en not_active Abandoned
- 2017-08-22 EP EP17755502.6A patent/EP3516925B1/de active Active
- 2017-08-22 JP JP2019511988A patent/JP6771657B2/ja active Active
- 2017-08-22 KR KR1020197007109A patent/KR102276922B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP3516925B1 (de) | 2020-06-17 |
US20190208579A1 (en) | 2019-07-04 |
DE102016118137A1 (de) | 2018-03-29 |
TW201815224A (zh) | 2018-04-16 |
EP3516925A1 (de) | 2019-07-31 |
TWI662858B (zh) | 2019-06-11 |
WO2018054629A1 (de) | 2018-03-29 |
CN109716858A (zh) | 2019-05-03 |
KR20190035889A (ko) | 2019-04-03 |
KR102276922B1 (ko) | 2021-07-13 |
JP2019530144A (ja) | 2019-10-17 |
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