JP6755323B2 - 偏光形ウエハ検査のための方法及び装置 - Google Patents

偏光形ウエハ検査のための方法及び装置 Download PDF

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Publication number
JP6755323B2
JP6755323B2 JP2018541392A JP2018541392A JP6755323B2 JP 6755323 B2 JP6755323 B2 JP 6755323B2 JP 2018541392 A JP2018541392 A JP 2018541392A JP 2018541392 A JP2018541392 A JP 2018541392A JP 6755323 B2 JP6755323 B2 JP 6755323B2
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Prior art keywords
defect
polarization
wave plate
scattering
irradiation
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JP2019516065A (ja
JP2019516065A5 (cg-RX-API-DMAC10.html
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シェン リウ
シェン リウ
グオヘン ツァオ
グオヘン ツァオ
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8848—Polarisation of light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/068—Optics, miscellaneous
    • G01N2201/0683—Brewster plate; polarisation controlling elements

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  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2018541392A 2016-03-28 2017-03-27 偏光形ウエハ検査のための方法及び装置 Active JP6755323B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662314362P 2016-03-28 2016-03-28
US62/314,362 2016-03-28
US15/468,608 2017-03-24
US15/468,608 US9874526B2 (en) 2016-03-28 2017-03-24 Methods and apparatus for polarized wafer inspection
PCT/US2017/024326 WO2017172624A1 (en) 2016-03-28 2017-03-27 Method and apparatus for polarized light wafer inspection

Publications (3)

Publication Number Publication Date
JP2019516065A JP2019516065A (ja) 2019-06-13
JP2019516065A5 JP2019516065A5 (cg-RX-API-DMAC10.html) 2020-05-07
JP6755323B2 true JP6755323B2 (ja) 2020-09-16

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JP2018541392A Active JP6755323B2 (ja) 2016-03-28 2017-03-27 偏光形ウエハ検査のための方法及び装置

Country Status (7)

Country Link
US (2) US9874526B2 (cg-RX-API-DMAC10.html)
JP (1) JP6755323B2 (cg-RX-API-DMAC10.html)
KR (1) KR102182566B1 (cg-RX-API-DMAC10.html)
CN (1) CN109075091B (cg-RX-API-DMAC10.html)
IL (1) IL261450B (cg-RX-API-DMAC10.html)
TW (1) TWI724144B (cg-RX-API-DMAC10.html)
WO (1) WO2017172624A1 (cg-RX-API-DMAC10.html)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5216752B2 (ja) * 2009-11-18 2013-06-19 株式会社日立ハイテクノロジーズ 欠陥検出方法及び欠陥検出装置並びにこれを備えた欠陥観察装置
US9995850B2 (en) 2013-06-06 2018-06-12 Kla-Tencor Corporation System, method and apparatus for polarization control
US9874526B2 (en) 2016-03-28 2018-01-23 Kla-Tencor Corporation Methods and apparatus for polarized wafer inspection
KR20180028787A (ko) * 2016-09-09 2018-03-19 삼성전자주식회사 디펙 검사 시스템과 방법, 및 그 검사 방법을 이용한 반도체 소자 제조방법
JP2018072290A (ja) * 2016-11-04 2018-05-10 ルネサスエレクトロニクス株式会社 故障箇所特定装置および故障箇所特定方法
US10234402B2 (en) * 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification
US11029253B2 (en) * 2017-03-30 2021-06-08 Applied Materials Israel Ltd. Computerized method for configuring an inspection system, computer program product and an inspection system
CN110720135A (zh) * 2017-06-08 2020-01-21 鲁道夫技术有限公司 包括激光三角测量传感器的晶片检查系统
US10168273B1 (en) * 2017-07-01 2019-01-01 Kla-Tencor Corporation Methods and apparatus for polarizing reticle inspection
JP6924645B2 (ja) * 2017-07-31 2021-08-25 日東電工株式会社 偏光フィルムの撮像装置、及び検査装置、並びに検査方法
US10677586B2 (en) 2018-07-27 2020-06-09 Kla-Tencor Corporation Phase revealing optical and X-ray semiconductor metrology
EP3608653B1 (en) * 2018-08-06 2024-03-13 Institut von Karman de Dynamique des Fluides, AISBL Apparatus and method for measuring particle size using backscattered light
DE102018128083A1 (de) 2018-11-09 2020-05-14 Leica Microsystems Cms Gmbh Mikroskopisches Durchlichtkontrastierverfahren
US10942135B2 (en) 2018-11-14 2021-03-09 Kla Corporation Radial polarizer for particle detection
WO2020136785A1 (ja) 2018-12-27 2020-07-02 株式会社日立ハイテク 欠陥検査装置および検査方法並びに光学モジュール
CN109860069B (zh) * 2019-01-31 2022-03-08 上海华虹宏力半导体制造有限公司 晶圆的测试方法
US10948423B2 (en) 2019-02-17 2021-03-16 Kla Corporation Sensitive particle detection with spatially-varying polarization rotator and polarizer
TWI716821B (zh) * 2019-02-22 2021-01-21 世界先進積體電路股份有限公司 晶圓結構
US11600497B2 (en) * 2019-04-06 2023-03-07 Kla Corporation Using absolute Z-height values for synergy between tools
CN111328370B (zh) * 2019-04-23 2023-05-02 合刃科技（深圳）有限公司 一种表面缺陷检测系统及方法
US11703460B2 (en) * 2019-07-09 2023-07-18 Kla Corporation Methods and systems for optical surface defect material characterization
US11105740B2 (en) * 2019-10-22 2021-08-31 Applied Materials Israel Ltd. Optical inspection
CN112748126A (zh) * 2019-10-31 2021-05-04 芯恩（青岛）集成电路有限公司 晶圆检测系统及检测方法
US11397153B2 (en) * 2019-12-03 2022-07-26 Kla Corporation Apparatus and method for gray field imaging
US12442759B2 (en) 2020-04-15 2025-10-14 Asml Holding N.V. Contaminant analyzing metrology system, lithographic apparatus, and methods thereof
US11474437B2 (en) * 2020-04-28 2022-10-18 Applied Materials Israel Ltd. Increasing signal-to-noise ratio in optical imaging of defects on unpatterned wafers
US11525777B2 (en) * 2020-04-28 2022-12-13 Applied Materials Israel Ltd. Optimizing signal-to-noise ratio in optical imaging of defects on unpatterned wafers
US11710227B2 (en) 2020-06-19 2023-07-25 Kla Corporation Design-to-wafer image correlation by combining information from multiple collection channels
JP7866271B2 (ja) * 2020-06-30 2026-05-27 ユニヴェルジテート ゲント 偏光フィルタ整合対を作製する方法、および偏光フィルタ対を使用して複屈折粒子の濃度を決定する方法および装置
CN111929310B (zh) * 2020-09-25 2021-02-05 歌尔股份有限公司 表面缺陷检测方法、装置、设备及存储介质
CN112347527B (zh) * 2020-11-09 2022-06-03 武汉科技大学 一种用于暗场缺陷检测的光罩掩模板图形设计方法
CN112464829B (zh) * 2020-12-01 2024-04-09 中航航空电子有限公司 一种瞳孔定位方法、设备、存储介质及视线追踪系统
US11879853B2 (en) * 2021-02-19 2024-01-23 Kla Corporation Continuous degenerate elliptical retarder for sensitive particle detection
US11546508B1 (en) * 2021-07-21 2023-01-03 Black Sesame Technologies Inc. Polarization imaging system with super resolution fusion
CN113916798B (zh) * 2021-10-11 2023-06-06 北京航空航天大学 一种适用于典型偏振多谱段探测系统的信噪比估算方法
US11796783B2 (en) * 2021-10-20 2023-10-24 Applied Materials Israel Ltd. Optical inspection using controlled illumination and collection polarization
US12399133B2 (en) 2021-10-20 2025-08-26 Applied Materials Israel Ltd. Optical inspection using controlled illumination and collection polarization
WO2023085217A1 (ja) * 2021-11-15 2023-05-19 株式会社レゾナック 検査条件提示装置、表面検査装置、検査条件提示方法及びプログラム
US12444630B2 (en) * 2021-12-14 2025-10-14 Kla Corporation Single-material waveplates for pupil polarization filtering
CN116482123A (zh) * 2023-06-20 2023-07-25 泉州装备制造研究所 一种光学元件表面微观缺陷检测方法、系统、设备及介质
CN117269193B (zh) * 2023-09-26 2024-06-25 迈沐智能科技(南京)有限公司 合成革表观质量智能化检测方法
WO2025080598A1 (en) * 2023-10-09 2025-04-17 Arizona Board Of Regents On Behalf Of The University Of Arizona Metrology system based on polarization imaging
KR102897512B1 (ko) * 2023-11-06 2025-12-12 한국표준과학연구원 정렬패턴부를 이용한 정렬 및 오차보정 장치
DE102023135353A1 (de) 2023-12-15 2025-06-18 Q.ant GmbH Vorrichtung und Verfahren zur Charakterisierung wenigstens eines Partikels in einem Messvolumen
US20250258096A1 (en) * 2024-02-09 2025-08-14 Applied Materials, Inc. Phase masking for polarization and optical signal control in optical inspection systems
KR20250138004A (ko) * 2024-03-12 2025-09-19 삼성전자주식회사 광학 검사 장치, 광학 검사 방법, 및 광학 검사 장치를 포함하는 광학 검사 시스템
US12292374B1 (en) 2024-03-28 2025-05-06 Camtek Ltd. Crystallographic defect inspection
US20250322678A1 (en) * 2024-04-11 2025-10-16 Fei Company Sample support grid recognition
US20260009739A1 (en) * 2024-07-02 2026-01-08 Kla Corporation Polarization control and optimization for photomask defect detection
US20260177483A1 (en) * 2024-12-24 2026-06-25 Onto Innovation Inc. Method and system for automated feature inspection and alignment in semiconductor fabrication

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740708A (en) 1987-01-06 1988-04-26 International Business Machines Corporation Semiconductor wafer surface inspection apparatus and method
US6118525A (en) 1995-03-06 2000-09-12 Ade Optical Systems Corporation Wafer inspection system for distinguishing pits and particles
US6034776A (en) 1997-04-16 2000-03-07 The United States Of America As Represented By The Secretary Of Commerce Microroughness-blind optical scattering instrument
US6924893B2 (en) * 2002-05-13 2005-08-02 Marine Biological Laboratory Enhancing polarized light microscopy
JP4183492B2 (ja) * 2002-11-27 2008-11-19 株式会社日立製作所 欠陥検査装置および欠陥検査方法
US7006224B2 (en) * 2002-12-30 2006-02-28 Applied Materials, Israel, Ltd. Method and system for optical inspection of an object
US7710564B1 (en) 2007-09-03 2010-05-04 Kla-Tencor Corporation Polarized broadband wafer inspection
JP2009180702A (ja) * 2008-02-01 2009-08-13 Nikon Corp 欠陥検査装置の調整方法、欠陥検査装置の調整状態の評価方法、及びパターンの方位角の設定方法
JP5216752B2 (ja) * 2009-11-18 2013-06-19 株式会社日立ハイテクノロジーズ 欠陥検出方法及び欠陥検出装置並びにこれを備えた欠陥観察装置
JP5525336B2 (ja) 2010-06-08 2014-06-18 株式会社日立ハイテクノロジーズ 欠陥検査方法および欠陥検査装置
JP2012117814A (ja) * 2010-11-29 2012-06-21 Hitachi High-Technologies Corp 欠陥検査装置および欠陥検査方法
EP2652776B1 (en) * 2010-12-16 2019-08-07 KLA-Tencor Corporation Wafer inspection
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US9228943B2 (en) 2011-10-27 2016-01-05 Kla-Tencor Corporation Dynamically adjustable semiconductor metrology system
US9239295B2 (en) 2012-04-09 2016-01-19 Kla-Tencor Corp. Variable polarization wafer inspection
US20150069247A1 (en) * 2012-04-17 2015-03-12 Nanyang Technologial University Method and system for real time inspection of a silicon wafer
JP2015206642A (ja) * 2014-04-18 2015-11-19 株式会社日立ハイテクノロジーズ 欠陥観察方法及びその装置
JP6369860B2 (ja) * 2014-07-15 2018-08-08 株式会社日立ハイテクノロジーズ 欠陥観察方法及びその装置
US9874526B2 (en) 2016-03-28 2018-01-23 Kla-Tencor Corporation Methods and apparatus for polarized wafer inspection

Also Published As

Publication number Publication date
US9874526B2 (en) 2018-01-23
IL261450B (en) 2021-06-30
TW201801217A (zh) 2018-01-01
WO2017172624A1 (en) 2017-10-05
US10228331B2 (en) 2019-03-12
JP2019516065A (ja) 2019-06-13
KR102182566B1 (ko) 2020-11-24
US20180364177A1 (en) 2018-12-20
IL261450A (en) 2018-10-31
CN109075091B (zh) 2020-03-24
KR20180121667A (ko) 2018-11-07
US20170276613A1 (en) 2017-09-28
CN109075091A (zh) 2018-12-21
TWI724144B (zh) 2021-04-11

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