JP6683490B2 - Transportation jig, substrate processing apparatus, and semiconductor device manufacturing method - Google Patents
Transportation jig, substrate processing apparatus, and semiconductor device manufacturing method Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 122
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims description 9
- 238000006073 displacement reaction Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000007723 transport mechanism Effects 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000032258 transport Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 17
- 230000007246 mechanism Effects 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Description
本発明は、運搬治具、基板処理装置および半導体装置の製造方法に関する。 The present invention relates to a carrying jig, a substrate processing apparatus, and a semiconductor device manufacturing method.
一般に、基板処理装置で用いられる基板保持具は、専用手袋を着用した作業者によって、基板保持具の天板や底板等を両手で保持し、運搬されている（特許文献１）。 Generally, a substrate holder used in a substrate processing apparatus is transported by an operator wearing special gloves while holding a top plate and a bottom plate of the substrate holder with both hands (Patent Document 1).
しかしながら、運搬時は作業者の両手が塞がるため、歩行時・作業時に転倒等の危険性がある。 However, since both hands of the worker are blocked during transportation, there is a risk of falling or the like during walking or working.
本発明の目的は、基板保持具を安全に運搬することが可能な技術を提供することにある。 An object of the present invention is to provide a technique capable of safely carrying a substrate holder.
本発明の一態様によれば、
天板と底板と前記天板と前記底板とに接続された複数の支柱とで構成され前記複数の支柱にて基板を保持する基板保持部を支持して運搬する運搬治具であって、
前記天板の上面に配置される天井部と、
前記基板保持部の側方で前記基板保持部に保持された基板の位置ずれを規制する規制部を有し前記天井部と接続される側方部と、
前記天井部と前記側方部との間か若しくは前記天井部又は前記側方部に設けられ、前記天板の周縁を支持するように構成される支持部と、
前記天井部に構成される取っ手部と、
を有する技術が提供される。
According to one aspect of the invention,
A carrying jig for supporting and carrying a substrate holding part configured to include a top plate, a bottom plate, a plurality of columns connected to the top plate and the bottom plate, and holding a substrate by the plurality of columns,
A ceiling portion arranged on the upper surface of the top plate,
A side portion that has a regulating portion that regulates the positional displacement of the substrate held by the substrate holding portion on the side of the substrate holding portion and that is connected to the ceiling portion;
Between the ceiling portion and the side portion or on the ceiling portion or the side portion, a support portion configured to support the peripheral edge of the top plate,
A handle portion configured on the ceiling portion,
Is provided.
本発明によれば、基板保持具を安全に運搬することが可能となる。 According to the present invention, the substrate holder can be safely transported.
＜本発明の一実施形態＞
以下に、本発明の一実施形態について、主に図１〜３を用いて説明する。
<One Embodiment of the Present Invention>
Below, one Embodiment of this invention is mainly described using FIGS.
（１）基板処理装置の構成
図１に示すように、基板処理装置２は、内部に処理炉１０等が配置される筐体４を備えている。筐体４の正面には、基板を複数枚保持する基板保持具を搬入出するための搬入出口６が配置される。筐体４の背面には、電源ＢＯＸ、ガス制御ＢＯＸ、ガス排気系および外部燃焼装置等が配置される。
(1) Configuration of Substrate Processing Apparatus As shown in FIG. 1, the substrate processing apparatus 2 includes a housing 4 in which a processing furnace 10 and the like are arranged. On the front surface of the housing 4, a loading / unloading port 6 for loading / unloading a substrate holder that holds a plurality of substrates is arranged. A power supply box, a gas control box, a gas exhaust system, an external combustion device, and the like are arranged on the back surface of the housing 4.
図２に示すように、筐体４の正面であり、搬入出口６の上部には、操作部１０２が設置される。筐体４内の空間は上下に区画されており、下部に準備室８、上部に処理炉１０が配置される。搬入出口６は筐体４外部と準備室８とを連通するように構成され、例えば観音開き形状に形成される。 As shown in FIG. 2, an operation unit 102 is installed on the front surface of the housing 4 and above the carry-in / out port 6. The space inside the housing 4 is divided into upper and lower parts, and the preparation chamber 8 is arranged in the lower part and the processing furnace 10 is arranged in the upper part. The loading / unloading port 6 is configured to connect the outside of the housing 4 and the preparation chamber 8 to each other, and has, for example, a double-door shape.
準備室８内には、基板保持具３２を移送する移送機構１４と、基板保持具３２を処理炉１０内に搬送する搬送機構１６が配置される。図３に示すように、移送機構１４は、前後方向に進出可能なアーム１４Ａと、アーム１４Ａに接続された載置部１４Ｂとを備える。移送機構１４は、受け渡し位置Ａと脱着位置Ｂとの２カ所の間で基板保持具３２を移送可能に構成される。また、移送機構１４は載置部１４Ｂを前後に進出させる取手部１４Ｃを有する。アーム１４Ａは左右対称に一対の腕として構成されているため、取手部１４Ｃを押し引きすることにより、載置部１４Ｂの水平を保ったまま、載置部１４Ｂを移送させることができる。これにより、載置部１４Ｂの移動の際に、載置部１４Ｂ状の基板保持具３２の位置ずれや転倒を防止することができる。 A transfer mechanism 14 for transferring the substrate holder 32 and a transfer mechanism 16 for transferring the substrate holder 32 into the processing furnace 10 are arranged in the preparation chamber 8. As shown in FIG. 3, the transfer mechanism 14 includes an arm 14A that can advance in the front-rear direction, and a mounting portion 14B that is connected to the arm 14A. The transfer mechanism 14 is configured to transfer the substrate holder 32 between the transfer position A and the detaching position B. Further, the transfer mechanism 14 has a handle portion 14C that advances the placing portion 14B forward and backward. Since the arms 14A are symmetrically configured as a pair of arms, by pushing and pulling the handle portion 14C, the placing portion 14B can be transferred while keeping the placing portion 14B horizontal. As a result, when the mounting portion 14B is moved, it is possible to prevent the substrate holder 32 in the mounting portion 14B from being displaced or falling.
搬送機構１６は、後述する炉口部１８を密閉する蓋部１６Ａを備える。蓋部１６Ａは受け渡し位置に配置されており、移送機構１４によって、蓋部１６Ａ上に基板保持具３２が載置される。搬送機構１６は、蓋部１６Ａ上に基板保持具３２が載置された状態で、蓋部１６Ａを上下に駆動させ、処理炉１０内外に基板保持具３２を搬入出させるように構成される。 The transport mechanism 16 includes a lid portion 16A that seals a furnace port portion 18 described later. The lid 16A is arranged at the delivery position, and the substrate holder 32 is placed on the lid 16A by the transfer mechanism 14. The transfer mechanism 16 is configured to drive the lid 16A up and down to carry the substrate holder 32 in and out of the processing furnace 10 with the substrate holder 32 placed on the lid 16A.
準備室８の天井には、基板保持具３２が通過し得る形状および大きさで、後述する処理室２２内に連通する炉口部１８が設けられる。 On the ceiling of the preparation chamber 8, there is provided a furnace port 18 having a shape and a size that allows the substrate holder 32 to pass therethrough and communicating with a processing chamber 22 described later.
（処理炉）
図４に示すように、処理炉１０は、略円筒形状の反応管２０を備えている。反応管２０は、例えば石英（ＳｉＯ２）や炭化珪素（ＳｉＣ）等の耐熱性を有する非金属材料から構成され、上端部が閉塞され、下端部が開放された形状に構成される。
(Processing furnace)
As shown in FIG. 4, the processing furnace 10 includes a reaction tube 20 having a substantially cylindrical shape. The reaction tube 20 is made of a heat-resistant non-metallic material such as quartz (SiO 2 ) or silicon carbide (SiC), and has a shape in which the upper end is closed and the lower end is opened.
反応管２０の内部には、処理室２２が形成される。反応管２０の下方には、この反応管２０と同心円状にマニホールド２４が配設される。マニホールド２４は、例えばステンレス鋼等の金属材料から構成された円筒形状である。このマニホールド２４により、反応管２０は、下端部側から縦向きに支持される。マニホールド２４の下端部には、開口である炉口部１８が形成される。マニホールド２４には、処理室２２内に処理ガスやパージガス等を導入するためのガス導入管２６と、処理室２２内のガスを排気するための排気管２８とが、それぞれ接続されている。 A processing chamber 22 is formed inside the reaction tube 20. Below the reaction tube 20, a manifold 24 is arranged concentrically with the reaction tube 20. The manifold 24 has a cylindrical shape made of a metal material such as stainless steel. The manifold 24 supports the reaction tube 20 vertically from the lower end side. At the lower end of the manifold 24, a furnace opening 18 that is an opening is formed. A gas introduction pipe 26 for introducing a processing gas, a purge gas, or the like into the processing chamber 22 and an exhaust pipe 28 for exhausting the gas in the processing chamber 22 are connected to the manifold 24.
ガス導入管２６には上流方向から順に、処理ガスの流量を制御する流量制御器（流量制御部）であるマスフローコントローラ（ＭＦＣ）および開閉弁であるバルブが設けられる。ガス導入管２６の先端にはノズルが接続され、ＭＦＣ、バルブ、ノズルを介して処理室２２内に処理ガスが供給される。 A mass flow controller (MFC) that is a flow rate controller (flow rate control unit) that controls the flow rate of the processing gas and a valve that is an opening / closing valve are provided in the gas introduction pipe 26 in order from the upstream direction. A nozzle is connected to the tip of the gas introduction pipe 26, and the processing gas is supplied into the processing chamber 22 through the MFC, the valve, and the nozzle.
排気管２８は処理室２２内の圧力を検出する圧力検出器（圧力検出部）としての圧力センサおよび圧力調整器（圧力調整部）としてのＡＰＣ（Ａｕｔｏ Ｐｒｅｓｓｕｒｅ Ｃｏｎｔｒｏｌｌｅｒ）バルブを介して、真空排気装置としての真空ポンプに接続される。 The exhaust pipe 28 is a vacuum exhaust device via a pressure sensor as a pressure detector (pressure detector) for detecting the pressure in the processing chamber 22 and an APC (Auto Pressure Controller) valve as a pressure regulator (pressure regulator). Is connected to the vacuum pump.
反応管２０の外周には、反応管２０と同心円状に加熱手段（加熱機構）としてのヒータユニット３０が配置される。反応管２０内には、温度検出器としての温度センサが設置されている。温度センサにより検出された温度情報に基づきヒータユニット３０への通電具合を調整することで、処理室２２内の温度が所望の温度分布となるように構成される。 A heater unit 30 as a heating unit (heating mechanism) is arranged on the outer periphery of the reaction tube 20 concentrically with the reaction tube 20. A temperature sensor as a temperature detector is installed in the reaction tube 20. The temperature inside the processing chamber 22 is configured to have a desired temperature distribution by adjusting the degree of energization to the heater unit 30 based on the temperature information detected by the temperature sensor.
移送機構１４、搬送機構１６、ＭＦＣ、バルブ、ＡＰＣバルブおよびガス供給機構等には、これらを制御するコントローラ１００が接続される。コントローラ１００は、例えば、ＣＰＵを備えたマイクロプロセッサ（コンピュータ）からなり、基板処理装置２の動作を制御するよう構成される。コントローラ１００には、操作部１０２が接続される。 A controller 100 for controlling these is connected to the transfer mechanism 14, the transport mechanism 16, the MFC, the valve, the APC valve, the gas supply mechanism, and the like. The controller 100 is composed of, for example, a microprocessor (computer) having a CPU, and is configured to control the operation of the substrate processing apparatus 2. An operation unit 102 is connected to the controller 100.
コントローラ１００には記憶媒体としての記憶部１０４が接続される。記憶部１０４には、基板処理装置２の動作を制御する制御プログラムや、処理条件に応じて基板処理装置２の各構成部に処理を実行させるためのプログラム（レシピとも言う）が、読み出し可能に格納される。 A storage unit 104 as a storage medium is connected to the controller 100. A control program for controlling the operation of the substrate processing apparatus 2 and a program (also called a recipe) for causing each component of the substrate processing apparatus 2 to perform processing according to processing conditions can be read out from the storage unit 104. Is stored.
（基板保持部）
図４および図５に示すように、本実施形態においては、基板保持部としての基板保持具３２を、上下方向（縦方向）に少なくとも１個以上積載させて処理する構成である。基板保持具３２は、複数枚、例えば２５枚の基板を収納するよう構成される。基板保持具３２は、天板３２Ａと、底板３２Ｂと、天板３２Ａおよび底板３２Ｂに接続され、基板を保持する保持溝が複数段形成された支柱部３２Ｃとで構成される。底板３２Ｂには位置合わせのための孔部３２Ｄが形成され、天板３２Ａには孔部３２Ｄに係合する凸部３２Ｅが形成される。
(Substrate holding part)
As shown in FIGS. 4 and 5, in the present embodiment, at least one or more substrate holders 32 as substrate holders are stacked in the vertical direction (vertical direction) for processing. The substrate holder 32 is configured to accommodate a plurality of substrates, for example, 25 substrates. The substrate holder 32 includes a top plate 32A, a bottom plate 32B, and a column portion 32C connected to the top plate 32A and the bottom plate 32B and having a plurality of holding grooves for holding the substrate. A hole portion 32D for alignment is formed on the bottom plate 32B, and a convex portion 32E that engages with the hole portion 32D is formed on the top plate 32A.
基板保持具３２は基板のインチに応じて、支柱部３２Ｃの位置が異なるよう構成される。基板のインチに応じた各種の基板保持具３２は、天板３２Ａと底板３２Ｂとの構成を共通化することにより、異なる種類のカセットでも積み重ねることが可能である。これにより、異なるインチの基板も同時に処理することができる。 The substrate holder 32 is configured so that the positions of the support columns 32C differ depending on the inch of the substrate. Various kinds of substrate holders 32 according to the inch of the substrate can be stacked in different types of cassettes by sharing the configuration of the top plate 32A and the bottom plate 32B. This allows substrates of different inches to be processed simultaneously.
基板保持具３２には基板と同様な形状に形成されたトレーを設置することができる。トレーは、例えばシリコンで形成される。トレー上に割れた基板を載置することにより、割れた基板上にも所望の処理を実施することができる。 A tray formed in the same shape as the substrate can be installed on the substrate holder 32. The tray is formed of, for example, silicon. By placing the broken substrate on the tray, desired processing can be performed on the broken substrate.
上述では、横置きの基板を縦方向に積層するカセットについて説明したが、縦置きの基板を横方向に積層するカセットであっても良い。カセットを上下に積み重ねる際の上下の接触面に、共通化された凸部と孔部とを形成することにより、縦置きのカセットであっても積載することが可能となる。また、接触面を共通化することにより、横置きのカセットと縦置きのカセットとを混載することもできる。 Although the cassette in which the horizontally placed substrates are stacked in the vertical direction has been described above, a cassette in which the vertically placed substrates are stacked in the horizontal direction may be used. By forming the common convex portion and the common hole portion on the upper and lower contact surfaces when stacking the cassettes vertically, it becomes possible to stack even the cassettes placed vertically. Further, by sharing the contact surface, it is possible to mix the horizontally placed cassette and the vertically placed cassette.
（２）運搬治具の構成
次に、基板保持具３２を運搬する際に用いられる運搬治具３４について説明する。
(2) Structure of Carrying Jig Next, the carrying jig 34 used when carrying the substrate holder 32 will be described.
図６、図７に示すように、運搬治具３４は２つに分割された一対の分割部材を基板保持具３２の側方から挟み込んで組み合わせることにより、基板保持具３２を固定し、保持することができるよう構成されている。このような構成により、基板保持具３２に直接手を触れることなく、運搬治具３４をカセットに脱着することができる。分割部材は組み合わせた際に、互いに対照となるように構成されている。 As shown in FIGS. 6 and 7, the carrying jig 34 fixes and holds the substrate holder 32 by sandwiching and combining a pair of divided members divided into two from the side of the substrate holder 32. Is configured to be able to. With such a configuration, the carrying jig 34 can be attached to and detached from the cassette without directly touching the substrate holder 32. The split members are configured to contrast with each other when assembled.
分割部材の形状について説明する。運搬治具３４の天井部材としての上板部３４Ａは、平面視において円弧状に形成される。円弧状の内径部分には切欠き部３４Ｂが形成されている。切欠き部３４Ｂは、基板保持具３２の凸部３２Ｅに係合することにより、基板保持具３２に対して運搬治具３４が位置決めされる。 The shape of the dividing member will be described. The upper plate portion 34A as the ceiling member of the carrying jig 34 is formed in an arc shape in a plan view. A cutout portion 34B is formed in the arc-shaped inner diameter portion. The notch 34 </ b> B engages with the protrusion 32 </ b> E of the substrate holder 32 to position the carrying jig 34 with respect to the substrate holder 32.
上板部３４Ａの上面には持ち手部３４Ｃが形成される。持ち手部３４Ｃの内面（分割部材が互いに接触する面）には、凸状のピン３４Ｄと、穴３４Ｅとがそれぞれ形成される。穴３４Ｅにピン３４Ｄを係合させることにより、分割部材のそれぞれの持ち手部３４Ｃを一体化することができる。 A handle portion 34C is formed on the upper surface of the upper plate portion 34A. A convex pin 34D and a hole 34E are formed on the inner surface of the handle portion 34C (the surface where the split members contact each other). By engaging the pin 34D with the hole 34E, the handle portions 34C of the split members can be integrated.
上板部３４Ａの下面には、柱状部材としての側方部３４Ｆが下方に向けて延伸するように、複数本形成されている。側方部３４Ｆは、基板保持具３２に運搬治具３４が設置された際に、基板保持具３２の最下段に保持される基板の位置まで延伸するように形成される。側方部３４Ｆの内面は、基板に沿うように曲面に形成され、側方部３４Ｆにより、カセット運搬時に基板が落下することを防止することができる。言い換えれば、側方部３４Ｆの内面側は基板の位置ずれを規制する規制部として構成される。このような構成により、基板を基板保持具３２に装着した状態で、基板保持具３２を運搬することができる。 A plurality of side portions 34F as columnar members are formed on the lower surface of the upper plate portion 34A so as to extend downward. The side portion 34F is formed so as to extend to the position of the substrate held at the lowermost stage of the substrate holder 32 when the carrying jig 34 is installed on the substrate holder 32. The inner surface of the side portion 34F is formed into a curved surface along the substrate, and the side portion 34F can prevent the substrate from dropping during transportation of the cassette. In other words, the inner surface side of the side portion 34F is configured as a regulation portion that regulates the displacement of the substrate. With such a configuration, the substrate holder 32 can be transported with the substrate mounted on the substrate holder 32.
図８に示すように、上板部３４Ａと側方部３４Ｆとの間には、基板保持具３２を支持する支持部としての間隙である保持部３４Ｇが形成される。保持部３４Ｇに基板保持具３２の天板３２Ａを差し込むことにより、基板保持具３２の天板の周縁を保持部３４Ｇが保持するよう構成される。ここでは、保持部３４Ｇは上板部３４Ａと側方部３４Ｆとの間に形成されているが、上板部３４Ａに段差（ざぐり）を形成することにより構成されても良い。また、側方部３４Ｆに切欠きを形成することにより構成されても良い。 As shown in FIG. 8, between the upper plate portion 34A and the side portions 34F, a holding portion 34G, which is a gap as a supporting portion that supports the substrate holding tool 32, is formed. By inserting the top plate 32A of the substrate holder 32 into the holder 34G, the holder 34G is configured to hold the peripheral edge of the top plate of the substrate holder 32. Here, the holding portion 34G is formed between the upper plate portion 34A and the side portion 34F, but it may be formed by forming a step (counterbore) on the upper plate portion 34A. Further, it may be configured by forming a notch in the side portion 34F.
図９に示すように、分割部材を組み合わせた状態で、持ち手部３４Ｃに固定部材としての固定部３６を設置しても良い。固定部３６は平面視において持ち手部３４Ｃと同様の長方形状に形成され、中空部分を持ち手部３４Ｃにはめ込むことにより、分割部材を互いに固定するよう構成される。このような構成とすることにより、運搬時に持ち手部３４Ｃが離れることなく、基板保持具３２を片手で保持・運搬することが可能となる。 As shown in FIG. 9, the fixing portion 36 as a fixing member may be installed in the handle portion 34C in a state where the dividing members are combined. The fixing portion 36 is formed in a rectangular shape similar to the handle portion 34C in plan view, and is configured to fix the split members to each other by fitting the hollow portion into the handle portion 34C. With such a configuration, it is possible to hold and carry the substrate holder 32 with one hand without the handle portion 34C being separated during carrying.
上述の実施例では、運搬治具を分割部材で構成された例を説明したが、分割せずに、一体構造としても良い。例えば、基板保持具３２の上方から覆い被せた後に、側方部３４Ｆおよび保持部３４Ｇを基板保持具３２側へスライドさせるような構造としても良い。 In the above-described embodiment, an example in which the carrying jig is composed of the dividing members has been described, but the carrying jig may be an integral structure without being divided. For example, the structure may be such that the side portion 34F and the holding portion 34G are slid toward the substrate holder 32 side after covering the substrate holder 32 from above.
（３）基板処理工程
次に、本実施形態にかかる基板処理装置２を用いて、半導体デバイス製造の一工程として、基板上に膜を形成する処理（成膜処理）について説明する。ここでは、基板に対して、原料ガスとしてＤＣＳ（ＳｉＨ２Ｃｌ２：ジクロロシラン）ガスと、反応ガスとしてＯ２（酸素）ガスとを供給することで、基板上にシリコン酸化（ＳｉＯ２）膜を形成する例について説明する。なお、以下の説明において、基板処理装置２を構成する各部の動作はコントローラ１００により制御される。
(3) Substrate Processing Step Next, using the substrate processing apparatus 2 according to the present embodiment, a step of forming a film on a substrate (film forming step) will be described as one step of manufacturing a semiconductor device. Here, a silicon oxide (SiO 2 ) film is formed on the substrate by supplying DCS (SiH 2 Cl 2 : dichlorosilane) gas as a source gas and O 2 (oxygen) gas as a reaction gas to the substrate. An example of forming the will be described. In the following description, the operation of each part of the substrate processing apparatus 2 is controlled by the controller 100.
（移送工程）
搬入出口６を開放し、移送機構１４が載置部１４Ｂを筐体４外部の脱着位置に駆動させる。載置部１４Ｂ上に、基板を保持した基板保持具３２を任意の個数だけ積載させる。このとき、基板保持具３２は運搬治具３４によって運搬され、載置部１４Ｂ上に積載される。基板保持具３２が積載されると、移送機構１４は積載された基板保持具３２を受け渡し位置Ａへ移送し、受け渡し位置Ａにて蓋部１６Ａ上に載置する。
(Transfer process)
The loading / unloading port 6 is opened, and the transfer mechanism 14 drives the mounting portion 14B to the detaching position outside the housing 4. An arbitrary number of substrate holders 32 holding substrates are placed on the mounting portion 14B. At this time, the substrate holder 32 is carried by the carrying jig 34 and loaded on the placing part 14B. When the substrate holders 32 are loaded, the transfer mechanism 14 transfers the loaded substrate holders 32 to the delivery position A, and places them on the lid 16A at the delivery position A.
（搬入工程）
続いて、搬送機構１６によって積載された基板保持具３２を上昇させて、準備室８内から処理室２２内へ搬入する（ボートローディング）。
(Loading process)
Subsequently, the substrate holder 32 loaded by the transport mechanism 16 is lifted and carried into the processing chamber 22 from the preparation chamber 8 (boat loading).
（処理工程）
排気管２８を用いて処理室２２内の排気を行い、処理室２２内が所望の圧力（真空度）となるようにする。そして、ヒータユニット３０を用いて処理室２２内を加熱する。さらに、ガス導入管２６より処理室２２内へＤＣＳガスと、Ｏ２ガスを供給する。これにより、基板表面にＳｉＯ２膜が形成される。
(Treatment process)
The inside of the processing chamber 22 is exhausted using the exhaust pipe 28 so that the inside of the processing chamber 22 has a desired pressure (vacuum degree). Then, the inside of the processing chamber 22 is heated using the heater unit 30. Further, DCS gas and O 2 gas are supplied into the processing chamber 22 through the gas introduction pipe 26. As a result, a SiO 2 film is formed on the surface of the substrate.
成膜処理後は、処理室２２内への不活性ガスの供給し、処理室２２内を不活性ガスで置換するとともに、処理室２２内の圧力を常圧に復帰させる。 After the film forming process, an inert gas is supplied into the processing chamber 22 to replace the inside of the processing chamber 22 with the inert gas, and the pressure inside the processing chamber 22 is returned to normal pressure.
（搬出工程）
搬送機構１６によって蓋部１６Ａを下降させて、基板保持具３２を処理室２２外へ搬出（ボートアンローディング）する。
(Unloading process)
The lid 16A is lowered by the transfer mechanism 16 to carry the substrate holder 32 out of the processing chamber 22 (boat unloading).
（移載工程）
移送機構１４が載置部１４Ｂを受け渡し位置に駆動させ、積載された基板保持具３２を載置部１４Ｂ上に載置させる。搬入出口６を開放した後、移送機構１４は積載された基板保持具３２を受け渡し位置Ａへ移送する。受け渡し位置Ａにて、基板保持具３２をそれぞれ搬出する。
(Transfer process)
The transfer mechanism 14 drives the placing portion 14B to the delivery position, and places the loaded substrate holders 32 on the placing portion 14B. After opening the carry-in / out port 6, the transfer mechanism 14 transfers the loaded substrate holders 32 to the transfer position A. At the transfer position A, each of the substrate holders 32 is carried out.
このようにして、本実施形態にかかる基板処理装置１０による基板処理工程の一連の処理動作が完了する。 In this way, a series of processing operations of the substrate processing process by the substrate processing apparatus 10 according to the present embodiment is completed.
（本実施形態にかかる効果）
本実施形態によれば、以下に挙げる一つ又は複数の効果を奏する。
(Effects of this embodiment)
According to this embodiment, one or a plurality of effects listed below are exhibited.
（１）搬治具はカセット天井部の下側を保持することにより、カセットに直接手を触れることなく、運搬治具を設置することができるため、カセットを汚染することなく、カセットの保持・運搬が可能となる。
（２）運搬治具によってカセットを保持し、上面に取っ手部を設けることにより、カセットを片手で保持・運搬することができるため、運搬に際し作業者の安全を確保することができる。
(1) Since the carrying jig holds the lower side of the ceiling of the cassette, the carrying jig can be installed without directly touching the cassette, so that the cassette can be held without being contaminated. It can be transported.
(2) Since the cassette is held by the carrying jig and the handle is provided on the upper surface, the cassette can be held and carried by one hand, so that the safety of the operator can be ensured during the carrying.
上述した各実施形態以外にも、本発明は、その要旨を逸脱しない範囲で、種々様々に変形して実施可能なことは勿論である。 It is needless to say that the present invention can be carried out in variously modified forms without departing from the scope of the invention, in addition to the embodiments described above.
２ 基板処理装置
３２ 基板保持具
３４ 運搬治具
2 substrate processing device 32 substrate holder 34 carrying jig
Claims (3)
前記天板の上面に配置される天井部と、
前記基板保持部の側方で前記基板保持部に保持された基板の位置ずれを規制する規制部を有し前記天井部と接続される側方部と、
前記天井部と前記側方部との間か若しくは前記天井部又は前記側方部に設けられ、前記天板の周縁を差し込んで支持するように構成される支持部と、
前記天井部に構成される取っ手部と、
を有する、分割された一対の分割部材を前記基板保持具の側方から挟み込んで組み合わせることにより、前記基板保持部を保持する運搬治具。 A substrate holding unit configured by a top plate, a bottom plate, and a plurality of columns connected to the top plate and the bottom plate to hold a substrate by the plurality of columns and to be used by being stacked in a processing chamber of a substrate processing apparatus. A carrying jig for individually supporting and carrying
A ceiling portion arranged on the upper surface of the top plate,
A side portion that has a regulating portion that regulates the positional displacement of the substrate held by the substrate holding portion on the side of the substrate holding portion and that is connected to the ceiling portion;
Between the ceiling portion and the side portion or on the ceiling portion or the side portion, a support portion configured to insert and support the peripheral edge of the top plate,
A handle portion configured on the ceiling portion,
To have a, by combining sandwich the divided pair of divided members from the side of the substrate holder, conveying jig for holding the substrate holder.
前記天板の上面に配置される天井部と、前記基板保持部の側方で前記基板保持部に保持された基板の位置ずれを規制する規制部を有し前記天井部と接続される側方部と、前記天井部と前記側方部との間か若しくは前記天井部又は前記側方部に設けられ、前記天板の周縁を差し込んで支持するように構成される支持部と、前記天井部に構成される取っ手部と、を有する、分割された一対の分割部材を前記基板保持具の側方から挟み込んで組み合わせることにより、前記基板保持部を保持する運搬治具を用いて個別に運搬された複数の前記基板保持具を積み上げた状態で前記処理室内に搬送する搬送機構と、
前記処理室内にガスを供給するガス供給部と、を有する基板処理装置。 A processing chamber for accommodating the substrate, which includes a substrate holding unit configured to include a top plate, a bottom plate, and a plurality of columns connected to the top plate and the bottom plate and which holds a substrate by the plurality of columns, and a processing chamber for processing the substrate. ,
A ceiling portion arranged on the upper surface of the top plate and a side portion that is connected to the ceiling portion and has a regulation portion that regulates the positional displacement of the substrate held by the substrate holding portion on the side of the substrate holding portion A portion, a support portion provided between the ceiling portion and the side portion or on the ceiling portion or the side portion, and configured to insert and support the peripheral edge of the top plate, and the ceiling portion. to have a, a handle portion configured by combining sandwich the divided pair of divided members from the side of the substrate holder, separately transported with haul jig for holding the substrate holder A transport mechanism that transports the plurality of substrate holders that have been stacked into the processing chamber,
A substrate processing apparatus comprising: a gas supply unit that supplies gas into the processing chamber.
前記処理室内で前記基板を処理する工程と、
を有する半導体装置の製造方法。 A ceiling part arranged on the top surface of the top plate of the substrate holding part configured to include a top plate, a bottom plate, a plurality of columns connected to the top plate and the bottom plate, and holding a substrate by the plurality of columns, A side part having a restricting part that restricts the positional displacement of the substrate held by the substrate holding part on the side of the substrate holding part, and a side part connected to the ceiling part; and the ceiling part and the side part or during or provided in the ceiling portion or the side portion to chromatic and configured supporting portion to support by inserting the peripheral edge of the top plate, and a handle portion constructed in said ceiling portion, divided by combining a pair of split members which are sandwiched from the side of the substrate holder, in a state where the stacked plurality of the substrate holder which is transported individually using transportation jig for holding the substrate holder A step of transferring to a processing chamber,
Processing the substrate in the processing chamber,
And a method for manufacturing a semiconductor device having the same.
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