JP6664301B2 - Apparatus and method for processing waste electronic substrate - Google Patents

Apparatus and method for processing waste electronic substrate Download PDF

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JP6664301B2
JP6664301B2 JP2016192579A JP2016192579A JP6664301B2 JP 6664301 B2 JP6664301 B2 JP 6664301B2 JP 2016192579 A JP2016192579 A JP 2016192579A JP 2016192579 A JP2016192579 A JP 2016192579A JP 6664301 B2 JP6664301 B2 JP 6664301B2
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resistant container
heat treatment
electronic substrate
waste electronic
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JP2018054240A (en
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典敏 田村
典敏 田村
泰之 石田
泰之 石田
隆 花田
隆 花田
英征 紙谷
英征 紙谷
温 川下
温 川下
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Taiheiyo Cement Corp
Matsuda Sangyo Co Ltd
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Matsuda Sangyo Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Description

本発明は、電子機器や自動車等に搭載されていた電子基板の廃棄物である廃電子基板の処理装置及び処理方法に関する。   The present invention relates to a processing apparatus and a processing method for a waste electronic substrate, which is a waste of an electronic substrate mounted on an electronic device, an automobile, or the like.

携帯電話やPC等の電子機器には、抵抗器や半導体チップ等の多数の電子部品が装着された電子基板が搭載されている。また、自動車等にも各所に制御用、電源用に種々のプリント基板が用いられている。これらの電子基板は、表面処理等に用いられる金、銅等の貴金属や、電子部品に由来するニッケル等のレアメタルを含む。そのため、廃棄された電子基板からこれらの有価物を回収することは、資源に乏しいわが国にとって極めて有益である。   2. Description of the Related Art Electronic devices such as mobile phones and PCs are equipped with electronic substrates on which a large number of electronic components such as resistors and semiconductor chips are mounted. Also, various printed circuit boards are used in various places such as automobiles for control and power supply. These electronic substrates include noble metals such as gold and copper used for surface treatment and the like, and rare metals such as nickel derived from electronic components. Therefore, collecting these valuable resources from discarded electronic substrates is extremely useful for Japan, which has scarce resources.

廃電子基板から上記有価物を回収するため、焙焼、破砕又は粉砕、選別、浸出等による分離回収が行われている。焙焼処理は、廃電子基板に含まれるプラスチック類等を炭化混合物として有用金属が含まれる金属から分離することを目的としている。   In order to recover the valuable resources from the waste electronic substrate, separation and recovery by roasting, crushing or pulverizing, sorting, leaching and the like are performed. The roasting treatment aims at separating plastics and the like contained in the waste electronic substrate from metals containing useful metals as a carbonized mixture.

ところで、廃リチウムイオン電池の焙焼処理に関し、本出願人は、特許文献1に記載のように、電池パックを排気口が設けられた耐熱容器に格納した後、熱処理炉内でアルミニウムの融点よりも低い温度で加熱し、耐熱容器部の電池パックを乾留して炭化混合物を分離して有用金属を回収する方法を提案している。   By the way, regarding the roasting treatment of a waste lithium ion battery, as described in Patent Document 1, the present applicant stores a battery pack in a heat-resistant container provided with an exhaust port, and then determines the melting point of aluminum in a heat treatment furnace. Has also been proposed in which the useful metal is recovered by heating at a low temperature, carbonizing the battery pack in the heat-resistant container, separating the carbonized mixture.

特開2016−22395号公報JP 2016-22395 A

上記特許文献1に記載の技術は、廃リチウムイオン電池を焙焼処理する際には有効であるが、この技術を廃電子基板の焙焼処理に転用すると、廃電子基板の内部まで酸素が行き渡らないため、還元雰囲気に近い状態となって焙焼に時間が掛かり、十分な処理量が得られないという問題があった。   The technique described in Patent Document 1 is effective when roasting a waste lithium ion battery. However, when this technique is diverted to roasting a waste electronic substrate, oxygen spreads to the inside of the waste electronic substrate. Therefore, there is a problem that the state becomes close to a reducing atmosphere and the roasting takes a long time, and a sufficient amount of treatment cannot be obtained.

そこで、本発明は、上記従来の技術における問題点に鑑みてなされたものであって、廃電子基板を短時間で大量に処理する装置及び方法を提供することを目的とする。   Therefore, the present invention has been made in view of the above-mentioned problems in the related art, and has as its object to provide an apparatus and a method for processing a large amount of waste electronic substrates in a short time.

上記目的を達成するため、本発明の廃電子基板の処理装置は、廃電子基板を収容する有底円筒状の耐熱容器であって、側面に形成されるスリットと、内部底面の中央部から鉛直方向に延設されると共に、側面に複数の開口が穿設される筒状部材とを有する耐熱容器と、円筒状の炉壁を有し、該炉壁の内面に沿って水平方向に燃料を噴出するバーナーと、上面視円形の天井部の中心部に排気管とを有する熱処理炉と、該熱処理炉に前記耐熱容器を投入及び排出可能な容器搬送装置とを備えることを特徴とする。   In order to achieve the above object, a waste electronic substrate processing apparatus according to the present invention is a bottomed cylindrical heat-resistant container for housing a waste electronic substrate, wherein a slit formed on a side surface and a vertical portion from a central portion of an inner bottom surface are provided. A heat-resistant container having a cylindrical member having a plurality of openings formed in a side surface thereof, and a cylindrical furnace wall, and supplying fuel in a horizontal direction along an inner surface of the furnace wall. It is characterized by comprising a heat treatment furnace having a burner to squirt, an exhaust pipe at the center of a circular ceiling in a top view, and a container transfer device capable of charging and discharging the heat-resistant container to and from the heat treatment furnace.

本発明によれば、廃電子基板のプラスチック類等を炭化混合物として有用金属が含まれる金属から分離する際に、スリット及び筒状部材を介して耐熱容器内の廃電子基板の内部まで通風を行き渡らせることができるため、プラスチック類の分解温度である200℃〜400℃の昇温時間を早めることができ、また、1バッチあたりの処理量の増加も可能となるため、廃電子基板の処理量を大幅に増加させることが可能になる。   According to the present invention, when separating the plastics and the like of the waste electronic substrate from the metal containing the useful metal as the carbonized mixture, the ventilation spreads to the inside of the waste electronic substrate in the heat-resistant container via the slit and the tubular member. Therefore, the temperature rise time of 200 ° C. to 400 ° C., which is the decomposition temperature of plastics, can be accelerated, and the processing amount per batch can be increased. Can be greatly increased.

上記廃電子基板の処理装置において、前記スリットを、水平方向に延設されるものとし、鉛直方向に複数段にわたって設けたり、前記筒状部材の側面に穿設される開口の総面積を該筒状部材の側面全体の面積の20%以上にすることができる。   In the waste electronic substrate processing apparatus, the slit is provided to extend in a horizontal direction, and may be provided in a plurality of steps in a vertical direction, or a total area of an opening formed in a side surface of the cylindrical member may be reduced by the cylinder. It can be 20% or more of the area of the entire side surface of the shaped member.

前記廃電子基板が前記スリットを介して前記耐熱容器の外部へ流出することを防止する流出防止手段を設けることができ、有用金属の損失を防止することができる。   Outflow prevention means for preventing the waste electronic substrate from flowing out of the heat-resistant container through the slit can be provided, and loss of useful metals can be prevented.

また、本発明の廃電子基板の処理方法は、廃電子基板を収容する有底円筒状の耐熱容器であって、側面に形成されるスリットと、内部底面の中央部から鉛直方向に延設されると共に、側面に複数の開口が穿設される筒状部材とを有する耐熱容器と、円筒状の炉壁を有し、該炉壁の内面に沿って水平方向に燃料を噴出するバーナーと、上面視円形の天井部の中心部に排気管とを有する熱処理炉と、該熱処理炉に前記耐熱容器を投入及び排出可能な容器搬送装置とを備える処理装置を用い、前記熱処理炉に投入された前記耐熱容器をその外側から前記バーナーで加熱して前記耐熱容器内部の前記廃電子基板を焙焼して炭化混合物を分離することを特徴とする。   Further, the method for treating a waste electronic substrate according to the present invention is a bottomed cylindrical heat-resistant container for housing the waste electronic substrate, wherein the slit is formed on a side surface and extends vertically from a central portion of an inner bottom surface. And a heat-resistant container having a cylindrical member having a plurality of openings formed in a side surface thereof, a burner having a cylindrical furnace wall, and injecting fuel in a horizontal direction along an inner surface of the furnace wall, The heat treatment furnace was equipped with a heat treatment furnace having an exhaust pipe at the center of a circular ceiling viewed from above, and a container transfer device capable of loading and unloading the heat-resistant container into and out of the heat treatment furnace. The heat-resistant container is heated from outside by the burner, and the waste electronic substrate inside the heat-resistant container is roasted to separate a carbonized mixture.

本発明によれば、上記発明と同様に、廃電子基板のプラスチック類等を炭化混合物として有用金属が含まれる金属から分離する際に、スリット及び筒状部材を介して、耐熱容器内の廃電子基板の内部まで通風を行き渡らせることができるため、プラスチック類の分解温度である200℃〜400℃の昇温時間を早めることができ、廃電子基板の処理量を大幅に増加させることが可能になる。   According to the present invention, similarly to the above-described invention, when separating plastics and the like of a waste electronic substrate from a metal containing a useful metal as a carbonized mixture, the waste electronic substrate in the heat-resistant container is passed through the slit and the tubular member. Since the ventilation can be spread to the inside of the substrate, the temperature rise time of 200 ° C. to 400 ° C., which is the decomposition temperature of plastics, can be accelerated, and the throughput of waste electronic substrates can be greatly increased. Become.

前記耐熱容器に収容する廃電子基板を予め最大寸法150mm以下に破砕したり、前記熱処理炉の内部温度を600℃以上700℃以下に調節することで、廃電子基板を効率よく焙焼することができる。   The waste electronic substrate housed in the heat-resistant container is crushed in advance to a maximum size of 150 mm or less, or the internal temperature of the heat treatment furnace is adjusted to 600 ° C or more and 700 ° C or less, so that the waste electronic substrate can be efficiently roasted. it can.

上記処理方法において、前記熱処理炉の排気管を介して排出されたガスをセメント焼成装置のプレヒータの350℃以上の領域に導入することができる。これによって、二次燃焼室として新規な施設を設ける必要がなく、燃焼ガス中のフッ化物をセメント調合原料に捕捉させたり、VOC(揮発性有機化合物)も燃焼させることができ、未燃焼ガスを無害化することもできる。   In the above processing method, the gas discharged through the exhaust pipe of the heat treatment furnace can be introduced into a region of 350 ° C. or higher of the preheater of the cement burning device. As a result, it is not necessary to provide a new facility as a secondary combustion chamber, and fluoride in the combustion gas can be captured by the cement mixture raw material, and VOCs (volatile organic compounds) can also be burned. It can be detoxified.

以上のように、本発明によれば、廃棄された電子基板を短時間で大量に処理することができる。   As described above, according to the present invention, a large amount of electronic substrates discarded can be processed in a short time.

本発明に係る廃電子基板の処理装置の一実施の形態を示す全体横断面図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an overall cross-sectional view showing an embodiment of a waste electronic substrate processing apparatus according to the present invention. 本発明に係る廃電子基板の処理装置の一実施の形態を示す全体縦断面図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an overall vertical sectional view showing an embodiment of a waste electronic substrate processing apparatus according to the present invention. 図1及び図2の処理装置に用いられる耐熱容器を示す図であって、(a)は正面図、(b)は上面図、(c)は底面図である。3A and 3B are diagrams showing a heat-resistant container used in the processing apparatus of FIGS. 1 and 2, wherein FIG. 3A is a front view, FIG. 3B is a top view, and FIG. 図3の耐熱容器を示す縦断面図である。FIG. 4 is a longitudinal sectional view showing the heat-resistant container of FIG. 3. 図3の耐熱容器の内筒に形成されたスリットの改変例を示す断面図である。It is sectional drawing which shows the modification of the slit formed in the inner cylinder of the heat resistant container of FIG. 図1及び図2の処理装置における熱処理炉に投入される直前の耐熱容器を示す横断面図である。FIG. 3 is a cross-sectional view showing a heat-resistant container immediately before being charged into a heat treatment furnace in the processing apparatus of FIGS. 1 and 2. 図1及び図2の処理装置における熱処理炉に投入される直前の耐熱容器を示す縦断面図である。FIG. 3 is a longitudinal sectional view showing a heat-resistant container immediately before being put into a heat treatment furnace in the processing apparatus of FIGS. 1 and 2. 比較例で用いた耐熱容器の容器本体を示す図であって、(a)は正面図、(b)は上面図、(c)は底面図である。It is a figure which shows the container main body of the heat resistant container used by the comparative example, (a) is a front view, (b) is a top view, (c) is a bottom view. 比較例で用いた耐熱容器の蓋を示す図であって、(a)は正面図、(b)は上面図である。It is a figure which shows the lid | cover of the heat resistant container used by the comparative example, (a) is a front view, (b) is a top view. 図8の容器本体及び図9の蓋を組み合わせて耐熱容器を構成した状態を示す縦断面図である。FIG. 10 is a longitudinal sectional view showing a state where a heat-resistant container is configured by combining the container body of FIG. 8 and the lid of FIG. 9. 試験例における昇温グラフであって、縦軸は原料物温度(℃)、横軸は運転時の時刻を示す。In the temperature rise graph in the test example, the vertical axis indicates the raw material temperature (° C.), and the horizontal axis indicates the time during operation.

次に、本発明の一実施の形態について図面を参照しながら詳細にする。   Next, an embodiment of the present invention will be described in detail with reference to the drawings.

図1及び図2に示すように、本発明に係る廃電子基板の処理装置1は、電子機器や自動車等に搭載されていたものが廃棄物として回収され、基板用シュレッダー等で予め破砕された廃電子基板(以下「基板」と略称する)40に加熱処理を施して有用金属を回収するものであって、基板40を収容する複数の耐熱容器2と、熱処理炉3と、熱処理炉3に耐熱容器2を投入及び排出する容器搬送装置4等を備える。   As shown in FIGS. 1 and 2, in the waste electronic substrate processing apparatus 1 according to the present invention, what was mounted on an electronic device or an automobile was collected as waste and crushed in advance by a substrate shredder or the like. The waste electronic substrate (hereinafter abbreviated as “substrate”) 40 is subjected to a heat treatment to recover useful metals. The plurality of heat-resistant containers 2 accommodating the substrate 40, the heat treatment furnace 3, and the heat treatment furnace 3 It is provided with a container transport device 4 for charging and discharging the heat-resistant container 2 and the like.

耐熱容器2は鋼材等からなり、少なくとも650℃の耐熱温度を有する。この耐熱容器2は、図3に示すように、上方に開口して円筒状に形成された内筒2aと、内筒2aよりも大径で内筒2aを囲繞するように配置された外筒2bと、内筒2a及び外筒2bの底面2jに配置された複数の車輪2cと、外筒2bの周面2dに固定された2本の取っ手2eと、外筒2bの周面2dから突出するハンガー2fとで構成される。   The heat-resistant container 2 is made of steel or the like and has a heat-resistant temperature of at least 650 ° C. As shown in FIG. 3, the heat-resistant container 2 has an inner cylinder 2a opened upward and formed in a cylindrical shape, and an outer cylinder arranged so as to surround the inner cylinder 2a with a larger diameter than the inner cylinder 2a. 2b, a plurality of wheels 2c arranged on the bottom surface 2j of the inner cylinder 2a and the outer cylinder 2b, two handles 2e fixed to the peripheral surface 2d of the outer cylinder 2b, and protruding from the peripheral surface 2d of the outer cylinder 2b. Hanger 2f.

内筒2aの側面には、耐熱容器2の内部への通風を促進させるため、中心角が略々180°の円弧状に水平方向に延設されるスリット2gが、鉛直方向において3段にわたって形成される。また、図4に示すように、耐熱容器2の内部にも、耐熱容器2の内部への通風を促進させるために、底面2jの中央部から鉛直上方にパンチングメタル製の筒状部材2hが延設される。   On the side surface of the inner cylinder 2a, slits 2g extending horizontally in an arc shape having a center angle of substantially 180 ° are formed in three steps in the vertical direction in order to promote ventilation to the inside of the heat-resistant container 2. Is done. As shown in FIG. 4, a cylindrical member 2 h made of punched metal extends vertically upward from the center of the bottom surface 2 j in the heat-resistant container 2 in order to promote ventilation to the inside of the heat-resistant container 2. Is established.

スリット2gは、上記のものに限定されず、側面略々全周にわたって形成してもよく、鉛直方向に3段に限らず、2段以下であっても4段以上であってもよい。また、筒状部材2hは、パンチングメタル製でなくとも、筒状に形成されて側面に通気用の複数の開口が穿設されているものであればよく、側面に穿設される開口の総面積を筒状部材2hの側面全体の面積の20%以上とすることが好ましい。筒状部材2hの直径は、通風を確保するために5cm以上であることが好ましい。また、筒状部材2hの側面に穿設される開口の直径あるいは幅は、廃電子基板40が開口を通過しないように5〜30mmであることが好ましい。スリット2gの幅は、廃電子基板40が通過して外部へ流出しないように5〜30mmであることが好ましい。   The slits 2g are not limited to those described above, and may be formed over substantially the entire periphery of the side surface. The number of slits is not limited to three in the vertical direction, and may be two or less or four or more. The cylindrical member 2h need not be made of punching metal, but may be formed in a cylindrical shape and provided with a plurality of openings for ventilation on the side surface. It is preferable that the area is 20% or more of the area of the entire side surface of the cylindrical member 2h. The diameter of the cylindrical member 2h is preferably 5 cm or more in order to secure ventilation. The diameter or width of the opening formed in the side surface of the cylindrical member 2h is preferably 5 to 30 mm so that the waste electronic substrate 40 does not pass through the opening. The width of the slit 2g is preferably 5 to 30 mm so that the waste electronic substrate 40 does not pass through and flow out.

また、耐熱容器2の内筒2aに廃電子基板40に収容する際に、廃電子基板40がスリット2gを通過して外部へ流出することを防止するため、図5に示すように、内筒2aに曲折部2kを設けてスリット2mを形成してもよい。さらに、耐熱容器2に、加熱処理時に外部へ流出した廃電子基板40を受けて溜め込む凹部(不図示)を形成し、プラスチック等の溶解物が耐熱容器2から外にこぼれ出すことを防止してもよい。   When the waste electronic substrate 40 is accommodated in the inner cylinder 2a of the heat-resistant container 2 in order to prevent the waste electronic substrate 40 from flowing out through the slit 2g, as shown in FIG. A bent portion 2k may be provided in 2a to form a slit 2m. Further, a concave portion (not shown) is formed in the heat-resistant container 2 for receiving and storing the waste electronic board 40 flowing out to the outside during the heat treatment, thereby preventing a melt such as plastic from spilling out of the heat-resistant container 2. Is also good.

図1及び図2に示すように、熱処理炉3は、耐火材で覆われた鋼板で炉壁7が構成された円筒状の縦型炉であり、4本のガスバーナー8(8A〜8D)によって加熱される。ガスバーナー8の近傍にはノズル11(11A〜11D)が設けられ、ファン(不図示)を介して送られる、燃焼用及び冷却用の空気Aが炉内に供給される。炉内の温度及び圧力を測定するために温度計13及び圧力計14が設けられる。尚、ガスバーナー8及びノズル11の設置本数は、4本に限定されることなく、3本以下であっても5本以上であってもよい。   As shown in FIGS. 1 and 2, the heat treatment furnace 3 is a cylindrical vertical furnace having a furnace wall 7 formed of a steel plate covered with a refractory material, and includes four gas burners 8 (8A to 8D). Heated by A nozzle 11 (11A to 11D) is provided near the gas burner 8, and combustion and cooling air A sent through a fan (not shown) is supplied into the furnace. A thermometer 13 and a pressure gauge 14 are provided for measuring the temperature and pressure in the furnace. The number of gas burners 8 and nozzles 11 is not limited to four, but may be three or less or five or more.

熱処理炉3の炉床17は、炉壁7と同様に耐火材で覆われた鋼板からなり、電動モータ(不図示)を備えた炉床回転装置19によって鉛直軸回りに回転し、位置決めセンサ(不図示)によって所定の位置に位置決めされる。   The hearth 17 of the heat treatment furnace 3 is made of a steel plate covered with a refractory material similarly to the furnace wall 7, and is rotated around a vertical axis by a hearth rotating device 19 equipped with an electric motor (not shown), so that a positioning sensor ( (Not shown).

熱処理炉3の炉壁7の一部には、上下に開閉式の炉体扉7bで外部と仕切られた開口部7aが形成される。開口部7aに対向する位置に、開口部7aから熱処理炉3内に耐熱容器2を投入すると共に、熱処理炉3内を一周した後の耐熱容器2を熱処理炉3から排出する容器搬送装置4が設けられる。   An opening 7a is formed in a part of the furnace wall 7 of the heat treatment furnace 3 and is vertically separated from the outside by a furnace door 7b that can be opened and closed. At a position opposed to the opening 7a, the container transfer device 4 for charging the heat-resistant container 2 into the heat treatment furnace 3 from the opening 7a and discharging the heat-resistant container 2 after making a round in the heat treatment furnace 3 from the heat treatment furnace 3 is provided. Provided.

容器搬送装置4は、図1、図2、図6及び図7に示すように、熱処理炉3の開口部7aと熱処理炉3の中心を結ぶ線上の方向(図1では左右方向)に延びると共に、モータ18の正回転によって耐熱容器2に当接して耐熱容器2を熱処理炉3内に押し入れるプッシャー部4aと、耐熱容器2の外周に設けられたハンガー2fを係止する爪4cが先端に設けられ、モータ18の負回転によって耐熱容器2を熱処理炉3内から引っ張り出すプルアウト部4bを備えている。プッシャー部4aはプルアウト部4bの真上に配置される。   As shown in FIGS. 1, 2, 6, and 7, the container transfer device 4 extends in a direction (a left-right direction in FIG. 1) on a line connecting the opening 7 a of the heat treatment furnace 3 and the center of the heat treatment furnace 3. A pusher portion 4a which contacts the heat-resistant container 2 by the forward rotation of the motor 18 to push the heat-resistant container 2 into the heat treatment furnace 3 and a claw 4c for locking a hanger 2f provided on the outer periphery of the heat-resistant container 2 are provided at the tip. A pull-out portion 4b is provided to pull out the heat-resistant container 2 from the inside of the heat treatment furnace 3 by the negative rotation of the motor 18. The pusher part 4a is arranged right above the pull-out part 4b.

また、耐熱容器2は、熱処理炉3内に投入される直前には、すなわち、開閉式の炉体扉7bの外側に位置する際には、熱処理炉3の接線方向(図1では上下方向)に移動自在のスライドベース21上に載置され、スライドベース21の端部に接続されたベース移動装置22によってスライドベース21は、炉体扉7bの前位置に設けられた炉前室23(図1の位置)と、開閉式の炉前室扉24を隔てて外側に位置するスタンド25の間を移動可能にされている。炉前室23は、外部に対しては炉前室扉24で隔てられると共に、熱処理炉3に対しては炉体扉7bで隔てられ、炉体扉7bを開放したときの温度変化を抑えるようにしている。また、炉前室23を設けることで熱処理炉3内の雰囲気が保持されると共に、危険なガスの漏洩や熱風の吹き出しを防止することができる。   Immediately before the heat-resistant container 2 is put into the heat treatment furnace 3, that is, when the heat-resistant container 2 is located outside the openable furnace body door 7b, the tangential direction of the heat treatment furnace 3 (the vertical direction in FIG. 1). The slide base 21 is mounted on a slide base 21 that is movable in the furnace, and the slide base 21 is moved by a base moving device 22 connected to the end of the slide base 21 to a furnace front chamber 23 (FIG. 1) and a stand 25 located outside with the open / close type furnace front door 24 interposed therebetween. The furnace front chamber 23 is separated from the outside by a furnace front door 24, and is separated from the heat treatment furnace 3 by a furnace door 7b so as to suppress a temperature change when the furnace door 7b is opened. I have to. Further, by providing the furnace front chamber 23, the atmosphere in the heat treatment furnace 3 can be maintained, and dangerous gas leakage and hot air blowing can be prevented.

スライドベース21がスタンド25上に移動したときに、クレーン(不図示)で加熱される前の耐熱容器2がスライドベース21上に載せられ、その後、炉前室23までベース移動装置22によって運ばれ、加熱された後の耐熱容器2は炉前室23からスタンド25まで同じくベース移動装置22によって運ばれ、その後、冷却室(不図示)まで自動的に移動するように構成されている。ベース移動装置22は、モータ22aの駆動によってシャフト22bを伸縮させることでシャフト22bの先端に接続されたスライドベース21を移動させる。   When the slide base 21 moves onto the stand 25, the heat-resistant container 2 before being heated by the crane (not shown) is placed on the slide base 21, and then is carried to the furnace front chamber 23 by the base moving device 22. After being heated, the heat-resistant container 2 is similarly transported from the furnace front chamber 23 to the stand 25 by the base moving device 22 and then automatically moved to a cooling chamber (not shown). The base moving device 22 moves the slide base 21 connected to the tip of the shaft 22b by extending and contracting the shaft 22b by driving the motor 22a.

図1及び図2に示すように、熱処理炉3より離れた位置に二次燃焼室27が設けられ、二次燃焼室27と熱処理炉3との間は排気管28によって連結されている。また排気管28には、排気管28を介して熱処理炉3内の未燃焼ガスを二次燃焼室27に送るファン29が設けられている。   As shown in FIGS. 1 and 2, a secondary combustion chamber 27 is provided at a position away from the heat treatment furnace 3, and the secondary combustion chamber 27 and the heat treatment furnace 3 are connected by an exhaust pipe 28. The exhaust pipe 28 is provided with a fan 29 for sending unburned gas in the heat treatment furnace 3 to the secondary combustion chamber 27 via the exhaust pipe 28.

二次燃焼室27もガスバーナー34によって加熱され、二次燃焼室27内で未燃焼ガスの燃焼用空気がファン30を介して二次燃焼室27内に供給される。また、二次燃焼室27内の温度は温度計32によって測定される。二次燃焼室27には排気用の煙突31が設けられる。   The secondary combustion chamber 27 is also heated by the gas burner 34, and the combustion air of the unburned gas is supplied into the secondary combustion chamber 27 via the fan 30 in the secondary combustion chamber 27. The temperature inside the secondary combustion chamber 27 is measured by a thermometer 32. The secondary combustion chamber 27 is provided with a chimney 31 for exhaust.

排気管28の熱処理炉3側は、図2に示すように、熱処理炉3の天井部の中央から熱処理炉3内に導かれ、その先端28aの位置は、耐熱容器2の内部に収容される基板40の上端位置より低くなるように設定されている。ここでは、排気管28の先端(下端)28aの位置を耐熱容器2の内部に収容される基板40の上端位置より低く設定することで、熱処理炉3内で熱風は上方から下方へまた下方から上方へ大きく対流し、上記スリット2gによる耐熱容器2の内部への通風促進と相まって、耐熱容器2の内部の基板40は効率的に焙焼される。これによって、多量の基板40を短時間で処理することができる。   As shown in FIG. 2, the heat treatment furnace 3 side of the exhaust pipe 28 is guided into the heat treatment furnace 3 from the center of the ceiling of the heat treatment furnace 3, and the position of the tip 28 a is accommodated inside the heat-resistant container 2. It is set to be lower than the upper end position of the substrate 40. Here, the position of the tip (lower end) 28a of the exhaust pipe 28 is set lower than the upper end of the substrate 40 accommodated in the heat-resistant container 2, so that the hot air flows from above to below and from below in the heat treatment furnace 3. The convection largely flows upward, and the substrate 40 inside the heat-resistant container 2 is efficiently roasted in combination with the promotion of the ventilation into the heat-resistant container 2 by the slit 2g. Thus, a large number of substrates 40 can be processed in a short time.

排気管28内の熱処理炉3の直上には、熱処理炉3の内部の圧力を調整するためのダンパー33が設けられ、例えば、熱処理炉3内の圧力が高まるとダンパー33を開き、熱処理炉3の内部の負圧が維持される。ダンパー33には、図示のバタフライバルブ等を用いることができる。   Immediately above the heat treatment furnace 3 in the exhaust pipe 28, a damper 33 for adjusting the pressure inside the heat treatment furnace 3 is provided. For example, when the pressure in the heat treatment furnace 3 increases, the damper 33 is opened, and the heat treatment furnace 3 is opened. The negative pressure inside is maintained. The illustrated butterfly valve or the like can be used for the damper 33.

次に、上記構成を有する廃電子基板の処理装置1を用いた廃電子基板の処理方法について説明する。   Next, a method of processing a waste electronic substrate using the waste electronic substrate processing apparatus 1 having the above configuration will be described.

(1)熱処理炉3の内部の残留ガスを炉外に排出するプレパージを行った後、ガスバーナー8に点火して炉温を600℃〜700℃まで昇温して温度を一定に保持する。   (1) After performing pre-purge for discharging the residual gas inside the heat treatment furnace 3 to the outside of the furnace, the gas burner 8 is ignited to raise the furnace temperature from 600 ° C. to 700 ° C. to keep the temperature constant.

(2)炉前室扉24を開放してベース移動装置22を介してスライドベース21を炉前室23の外側に設けられたスタンド25の位置まで前進させる。そして、クレーン(不図示)を使用して、図6及び図7に示したように基板40が収容された耐熱容器2をスタンド25の位置に移動したスライドベース21上に載置する。   (2) Open the furnace front chamber door 24 and advance the slide base 21 to the position of the stand 25 provided outside the furnace front chamber 23 via the base moving device 22. Then, using a crane (not shown), the heat-resistant container 2 containing the substrate 40 is placed on the slide base 21 moved to the position of the stand 25 as shown in FIGS.

(3)ベース移動装置22を介してスライドベース21をスタンド25の位置から炉前室23内まで後退させ、炉前室扉24を閉鎖する。   (3) The slide base 21 is retracted from the position of the stand 25 to the inside of the furnace front chamber 23 via the base moving device 22, and the furnace front chamber door 24 is closed.

(4)炉体扉7bを開放した後、容器搬送装置4のプッシャー部4aを前進させて耐熱容器2を熱処理炉3内に投入する。これにより、耐熱容器2は熱処理炉3の炉床17上、図1では9時の位置に載置される。   (4) After opening the furnace door 7b, the pusher portion 4a of the container transfer device 4 is advanced to put the heat-resistant container 2 into the heat treatment furnace 3. Thus, the heat-resistant container 2 is placed on the hearth 17 of the heat treatment furnace 3 at the position of 9 o'clock in FIG.

(5)容器搬送装置4のプッシャー部4aを後退させた後、炉体扉7bを閉鎖し、炉床回転装置19を介して炉床17を45゜左回転させる。この45゜の回転は、特に限定されるものではないが、例えば、37.5分毎に炉床17を45゜ずつ回転させることで、5時間で炉床17が1回転するように設定している。   (5) After the pusher portion 4a of the container transfer device 4 is retracted, the furnace body door 7b is closed, and the hearth 17 is rotated 45 ° counterclockwise through the hearth rotating device 19. The rotation at 45 ° is not particularly limited. For example, by setting the hearth 17 to rotate 45 ° every 37.5 minutes, the hearth 17 is set to rotate once in 5 hours. ing.

(6)上記(1)〜(5)の処理をさらに7回繰り返すことで、熱処理炉3の炉床17上には、図1に示したように、隣接する耐熱容器2が一定の間隔を開けた状態で8個の耐熱容器2が環状に載置される。   (6) By repeating the above processes (1) to (5) seven more times, adjacent heat-resistant containers 2 are spaced at a fixed interval on the hearth 17 of the heat treatment furnace 3 as shown in FIG. Eight heat-resistant containers 2 are placed in a ring shape in an opened state.

上記動作の間、耐熱容器2は熱処理炉3内で1周する間に外側から加熱されることで、耐熱容器2に収容された基板40に含まれるプラスチック類は焙焼により炭化混合物として金、銅、ニッケル等の有用金属から分離された状態となっている。   During the above operation, the heat-resistant container 2 is heated from the outside while making one round in the heat treatment furnace 3, so that the plastics contained in the substrate 40 accommodated in the heat-resistant container 2 are roasted to form a carbonized mixture of gold, It is in a state separated from useful metals such as copper and nickel.

プラスチック等の可燃性物質が熱分解することによって発生したガスは、耐熱容器2の上部から熱処理炉3内に排出され、熱処理炉3内で熱源として再利用される。また、上記熱処理の際に、熱処理炉3内の温度は、ノズル11を介して供給される空気の酸素量を調整することにより、耐熱容器2から熱処理炉3内に放出される可燃性ガスの燃焼量を制御し、温度計13による測定値が所望の値又は範囲となるように制御する。   Gas generated by the thermal decomposition of a flammable substance such as plastic is discharged from the upper part of the heat-resistant container 2 into the heat treatment furnace 3 and reused as a heat source in the heat treatment furnace 3. During the heat treatment, the temperature in the heat treatment furnace 3 is controlled by adjusting the amount of oxygen in the air supplied through the nozzle 11 so that the flammable gas released from the heat-resistant container 2 into the heat treatment furnace 3 is heated. The amount of combustion is controlled so that the value measured by the thermometer 13 becomes a desired value or range.

一方、熱処理炉3の内部が正圧になると、熱処理炉3の開口部7aから炉外に熱ガスが噴出し、熱処理炉3への耐熱容器2の投入及び排出が困難になるため、熱処理炉3の内部を負圧に維持する必要がある。そこで、圧力計14の測定値に応じてダンパー33を開閉して熱処理炉3の内部を所望の値又は範囲に維持する。例えば、基板40の焙焼時に有機化合物が激しく燃焼して熱処理炉の内部の圧力が急激に上昇したような場合でも、ダンパー33を開いて迅速に圧力を逃がし、熱処理炉3の内部の負圧を維持する。ダンパー33が熱処理炉3の天井部の近傍の排気管28の内部に配置されているため、熱処理炉3の内部の圧力変化に迅速に対応することができる。   On the other hand, when the pressure inside the heat treatment furnace 3 becomes a positive pressure, a hot gas is blown out of the furnace from the opening 7a of the heat treatment furnace 3 and it becomes difficult to put and discharge the heat-resistant container 2 into and out of the heat treatment furnace 3. It is necessary to maintain the inside of 3 at a negative pressure. Therefore, the damper 33 is opened and closed according to the measurement value of the pressure gauge 14 to maintain the inside of the heat treatment furnace 3 at a desired value or range. For example, even when the organic compound burns violently during the roasting of the substrate 40 and the pressure inside the heat treatment furnace suddenly rises, the pressure is quickly released by opening the damper 33 and the negative pressure inside the heat treatment furnace 3 is reduced. To maintain. Since the damper 33 is disposed inside the exhaust pipe 28 near the ceiling of the heat treatment furnace 3, it is possible to quickly respond to a pressure change inside the heat treatment furnace 3.

尚、熱処理炉3内の未燃焼ガスは二次燃焼室27に導かれ、熱処理炉3の温度(600〜700℃)よりも高い温度(800℃)で燃焼する。   The unburned gas in the heat treatment furnace 3 is guided to the secondary combustion chamber 27 and burns at a temperature (800 ° C.) higher than the temperature of the heat treatment furnace 3 (600 to 700 ° C.).

(7)耐熱容器2が熱処理炉3内で1周すると、炉体扉7bを開放して容器搬送装置4のプルアウト部4bを耐熱容器2の位置まで前進させ、図7に示すように、プルアウト部4bの先端に設けられた爪4cを、耐熱容器2に設けられたハンガー2fに係止させる。そして、プルアウト部4bを後退させて耐熱容器2を熱処理炉3から引き出してスライドベース21上に載置し、炉体扉7bを閉鎖する。   (7) When the heat-resistant container 2 makes one round in the heat treatment furnace 3, the furnace door 7b is opened and the pull-out portion 4b of the container transfer device 4 is advanced to the position of the heat-resistant container 2, and as shown in FIG. The claw 4c provided at the tip of the portion 4b is engaged with a hanger 2f provided in the heat-resistant container 2. Then, the pull-out portion 4b is retracted, the heat-resistant container 2 is pulled out of the heat treatment furnace 3, placed on the slide base 21, and the furnace door 7b is closed.

(8)次に、炉前室扉24を開放した後、ベース移動装置22を介して加熱処理済みの耐熱容器2が載置されたスライドベース21をスタンド25の位置まで前進させる。そして、この状態で炉前室扉24を半分閉鎖し、スライドベース21を元の位置に戻すと耐熱容器2は半分閉鎖状態の炉前室扉24に当接してスタンド25上に載せられる。そして、炉前室扉24は全閉される。   (8) Next, after opening the furnace front chamber door 24, the slide base 21 on which the heat-resistant container 2 having been subjected to the heat treatment is placed is advanced through the base moving device 22 to the position of the stand 25. When the front door 24 of the furnace front chamber is half closed in this state and the slide base 21 is returned to the original position, the heat-resistant container 2 comes into contact with the door 24 of the furnace front chamber in the half closed state and is placed on the stand 25. Then, the furnace front chamber door 24 is completely closed.

(9)その後、スタンド25の位置まで移動させられたスライドベース21上の加熱処理済みの耐熱容器2は、移送コンベア(不図示)に載せられて冷却室(不図示)に運ばれる。尚、(8)で耐熱容器2が半分閉鎖状態の炉前室扉24に当接することによって、移送コンベア上に載せられ自動的に搬送されるようにすることもできる。そして、その加熱処理済みの耐熱容器2の代わりにスライドベース21上には、(2)で示したものと同様に、クレーン(不図示)を使用し、基板40が収容された新たな耐熱容器2が設置され、(3)以下の処理が繰り返して行われる。   (9) After that, the heat-resistant container 2 on the slide base 21 that has been moved to the position of the stand 25 is placed on a transfer conveyor (not shown) and carried to a cooling chamber (not shown). The heat-resistant container 2 may be placed on the transfer conveyor and automatically conveyed by abutting the half-closed furnace front chamber door 24 in (8). Then, instead of the heat-resistant container 2 that has been subjected to the heat treatment, a new heat-resistant container in which the substrate 40 is accommodated by using a crane (not shown) on the slide base 21 in the same manner as shown in (2). 2 is installed, and the following processing (3) is repeatedly performed.

冷却室に運ばれた加熱処理済みの耐熱容器2は、内部の基板40を破砕、分級して炭化混合物を取り除いた後、金、銅、ニッケル等の有用金属をさらに分離する処理が行われる。   The heat-resistant container 2 that has been heated and transported to the cooling chamber is subjected to a process of further separating useful metals such as gold, copper, and nickel after crushing and classifying the internal substrate 40 to remove the carbonized mixture.

以上のように構成された廃電子基板の処理装置及び処理方法によれば、基板40のプラスチック類等を炭化混合物として有用金属が含まれる金属から分離する際に、耐熱容器2のスリット2g及び筒状部材2hを介して、耐熱容器2の内部に収容される基板40の内部の隅々まで通風を行き渡らせることができるため、プラスチック類の分解温度である200℃〜400℃の昇温時間を早めることができ、また、1バッチあたりの処理量の増加も可能となるため、基板40の処理量を大幅に増加させることが可能になる。   According to the processing apparatus and the processing method of the waste electronic substrate configured as described above, when separating the plastics and the like of the substrate 40 from the metal containing the useful metal as the carbonized mixture, the slit 2g and the cylinder of the heat-resistant container 2 are used. Since the ventilation can be spread to all corners inside the substrate 40 accommodated in the heat-resistant container 2 through the shaped member 2h, the heating time of 200 ° C. to 400 ° C., which is the decomposition temperature of plastics, is reduced. Since it is possible to accelerate the processing and to increase the processing amount per batch, the processing amount of the substrate 40 can be greatly increased.

また、熱処理炉3から未燃焼ガスを二次燃焼室27に導いて、熱処理炉3の温度(600〜700℃)よりも高い温度(800℃)で燃焼させるようにしたので、臭気の発生を抑えることができる。   In addition, the unburned gas is led from the heat treatment furnace 3 to the secondary combustion chamber 27 and burned at a temperature (800 ° C.) higher than the temperature of the heat treatment furnace 3 (600 to 700 ° C.). Can be suppressed.

本実施の形態では、炉床17が回転する熱処理炉3を使用することで均一的な加熱処理を行ったが、必ずしも炉床17が回転するものでなくてもよい。また、熱処理炉3内に複数の耐熱容器2を連続して投入・排出するようにしたがバッチ式のものでも適用可能である。   In the present embodiment, the uniform heat treatment is performed by using the heat treatment furnace 3 in which the hearth 17 rotates, but the hearth 17 does not necessarily need to rotate. Further, a plurality of heat-resistant containers 2 are continuously charged and discharged into the heat treatment furnace 3, but a batch type can be applied.

また、本実施の形態では、熱処理炉3内の炉温を600℃〜700℃程度に保持する場合について説明したが、加熱処理の温度は、プラスチックの分解温度(300℃)以上であれば樹脂製材料は分解され金属から分離されるので特に限定されるものではない。   In this embodiment, the case where the furnace temperature in the heat treatment furnace 3 is maintained at about 600 ° C. to 700 ° C. has been described. However, if the temperature of the heat treatment is not lower than the decomposition temperature of plastic (300 ° C.), The material is not particularly limited because it is decomposed and separated from the metal.

また、本実施形態では、加熱処理用の熱源としてガスを用いた熱処理炉3を使用したが、熱源として電気や重油を用いた各種炉を使用することもできる。また、既存の製造設備、例えば、セメント焼成装置からの排ガスを熱源として用いることなどにより熱エネルギーの有効利用を図ることができる。   In the present embodiment, the heat treatment furnace 3 using gas is used as the heat source for the heat treatment. However, various furnaces using electricity or heavy oil can be used as the heat source. In addition, effective use of thermal energy can be achieved by using, as a heat source, exhaust gas from an existing manufacturing facility, for example, a cement firing apparatus.

さらに、熱処理炉3の排気管28を介して排出されたガスを二次燃焼室27に導入せずに、セメント焼成装置のプレヒータの350℃以上の領域に導入することができる。これによって、二次燃焼室27が不要となると共に、燃焼ガス中のフッ化物をセメント調合原料に捕捉させたり、VOC(揮発性有機化合物)も燃焼させることができ、未燃焼ガスを無害化することもできる。電気炉での実験によれば、セメント調合原料によって燃焼ガス中のフッ化物濃度を約0.4%に、フッ化水素濃度を約0.45%に低減することができ、炭化カルシウムを乾式処理剤として用いた場合の20倍程度の低減効果がある。   Further, the gas discharged through the exhaust pipe 28 of the heat treatment furnace 3 can be introduced into the region of 350 ° C. or higher of the preheater of the cement firing apparatus without being introduced into the secondary combustion chamber 27. As a result, the secondary combustion chamber 27 becomes unnecessary, and the fluoride in the combustion gas can be captured by the raw material for cement mixing, and VOC (volatile organic compound) can also be burned, thereby rendering the unburned gas harmless. You can also. According to an experiment in an electric furnace, it was possible to reduce the fluoride concentration in the combustion gas to about 0.4% and the hydrogen fluoride concentration to about 0.45% by using the cement mixture raw material, and dry-process calcium carbide. There is about a 20-fold reduction effect when used as an agent.

また、本実施の形態では、予め破砕された廃電子基板を処理する場合について説明したが、廃電子基板が元々小さい場合等、必ずしも予め廃電子基板を破砕する必要はない。尚、廃電子基板の破砕には、基板用シュレッダーの他に四軸破砕機等を用いることができる。   Further, in the present embodiment, a case has been described in which a waste electronic substrate that has been crushed in advance is processed. However, when the waste electronic substrate is originally small, it is not always necessary to crush the waste electronic substrate in advance. In addition, in order to crush the waste electronic substrate, a four-axis crusher or the like can be used in addition to the shredder for the substrate.

次に、本発明に係る廃電子基板の処理装置の試験例について説明する。この試験では、基板用シュレッダーによって破砕された廃電子基板を処理した。   Next, a test example of the waste electronic substrate processing apparatus according to the present invention will be described. In this test, waste electronic substrates crushed by a substrate shredder were processed.

実施例として、上記図1〜図7に示した廃電子基板の処理装置1を用い、比較例として、上記図3〜図7に示した耐熱容器2に代えて図8〜図10に示す耐熱容器52を用い、その他の構成は廃電子基板の処理装置1と同じものを用いた。   As an example, the waste electronic substrate processing apparatus 1 shown in FIGS. 1 to 7 was used, and as a comparative example, the heat resistant container shown in FIGS. 8 to 10 was used instead of the heat resistant container 2 shown in FIGS. A container 52 was used, and the other configuration was the same as that of the waste electronic substrate processing apparatus 1.

比較例で用いた耐熱容器52は、図10に示すように、容器本体52Aと蓋52Bとで構成され、両者は少なくとも650℃の耐熱温度を有する。   As shown in FIG. 10, the heat-resistant container 52 used in the comparative example includes a container body 52A and a lid 52B, both of which have a heat-resistant temperature of at least 650 ° C.

図8に示すように、容器本体52A(SS400)は、上方に開口して円筒状に形成された内筒52a(直径642mm、高さ800mm)と、内筒52aよりも大径で内筒52aを囲繞するように配置された外筒52b(直径700mm、高さ460mm)と、内筒52a及び外筒52bの底面に配置された複数の車輪52cと、外筒52bの周面52dに固定された2本の取っ手52eと、外筒52bの周面52dから突出するハンガー52fとで構成される。図7に示すように、中心角が略々140°の円弧状に水平方向に延設されるスリット2g(幅10mm)が、鉛直方向において高さ300mm付近に3段にわたって形成される。また、底面2jの中央部から鉛直上方にパンチングメタル製の筒状部材2h(直径100mm)が延設される。筒状部材2hの側面に開口(直径20mm)が穿設される。   As shown in FIG. 8, the container main body 52A (SS400) has an inner cylinder 52a (diameter 642 mm, height 800 mm) which is opened upward and is formed in a cylindrical shape, and an inner cylinder 52a having a larger diameter than the inner cylinder 52a. (A diameter of 700 mm, a height of 460 mm), a plurality of wheels 52c disposed on the bottom surfaces of the inner cylinder 52a and the outer cylinder 52b, and a peripheral surface 52d of the outer cylinder 52b. It comprises two handles 52e and a hanger 52f protruding from the peripheral surface 52d of the outer cylinder 52b. As shown in FIG. 7, slits 2g (width 10 mm) extending horizontally in an arc shape having a center angle of approximately 140 ° are formed in three steps near a height of 300 mm in the vertical direction. A cylindrical member 2h (100 mm in diameter) made of punched metal extends vertically upward from the center of the bottom surface 2j. An opening (diameter 20 mm) is formed in the side surface of the cylindrical member 2h.

一方、図9に示すように、蓋52Bは、下方に開口する円筒状に形成された本体52nと、本体52nの周面に開口して斜め上方に突出する排気管52gと、本体52nの天井面52hに設けられた取っ手52mとで構成される。排気管52gと水平面とのなす角は、45度程度である。また、排気管52gの向きは、排気管52gから噴出する燃焼ガスの速度ベクトルの水平成分が熱処理炉3の渦燃焼の方向と同方向になるように設定される。   On the other hand, as shown in FIG. 9, the lid 52B includes a cylindrical main body 52n that opens downward, an exhaust pipe 52g that opens on the peripheral surface of the main body 52n and projects obliquely upward, and a ceiling of the main body 52n. And a handle 52m provided on the surface 52h. The angle between the exhaust pipe 52g and the horizontal plane is about 45 degrees. The direction of the exhaust pipe 52g is set so that the horizontal component of the velocity vector of the combustion gas ejected from the exhaust pipe 52g is the same as the direction of the vortex combustion of the heat treatment furnace 3.

上記容器本体52Aと蓋52Bとで耐熱容器52を構成するには、図10に示すように、容器本体52Aの内筒52aと外筒52bの間の溝部52jに蓋52Bの本体52nの下端52kが嵌め込まれると共に、溝部52jに砂が充填されてサンドシールが構成され、蓋52Bは容器本体52Aに対して一定の距離L分だけ浮き上がり可能な状態で取り付けられる。比較例1では、上記蓋52Bを用い。比較例2では、蓋52Bを用いなかった。   In order to form the heat-resistant container 52 by the container main body 52A and the lid 52B, as shown in FIG. 10, the lower end 52k of the main body 52n of the lid 52B is formed in a groove 52j between the inner cylinder 52a and the outer cylinder 52b of the container main body 52A. Is fitted, sand is filled in the groove 52j to form a sand seal, and the lid 52B is attached to the container main body 52A so as to be able to lift up by a predetermined distance L. In Comparative Example 1, the lid 52B was used. In Comparative Example 2, the lid 52B was not used.

表1に試験条件及び試験結果を示す。また、図12に炉内の昇温グラフを示す。昇温グラフの温度は、実施例では耐熱容器2内のスリット2gの近傍、比較例では耐熱容器52内の容器本体52Aの壁面近くの高さ方向で中央部に熱電対を取り付けて原料の温度(物温)を測定した。   Table 1 shows test conditions and test results. FIG. 12 shows a graph of the temperature rise in the furnace. In the temperature rise graph, the temperature of the raw material was measured by attaching a thermocouple at the center in the height direction near the slit 2g in the heat-resistant container 2 in the embodiment and near the wall surface of the container body 52A in the heat-resistant container 52 in the comparative example. (Material temperature) was measured.

Figure 0006664301
Figure 0006664301

比較例1として、熱処理炉3内の温度を600℃に設定し、耐熱容器(蓋有り)52の一つ当たり基板40を64kg投入して焙焼した。その結果、図11(c)に示すように、投入後約1時間で炉温が200℃に達し、投入後約1時間30分で400℃に達した。また、基板40の減量率は16.7%であった。   As Comparative Example 1, the temperature in the heat treatment furnace 3 was set to 600 ° C., and 64 kg of the substrate 40 was charged per one of the heat-resistant containers (with lids) 52 and roasted. As a result, as shown in FIG. 11 (c), the furnace temperature reached 200 ° C. about 1 hour after charging, and reached 400 ° C. about 1 hour 30 minutes after charging. The weight loss rate of the substrate 40 was 16.7%.

比較例2として、熱処理炉3内の温度を600℃に設定し、耐熱容器(蓋無し)52の
一つ当たり基板40を64kg投入して焙焼した。その結果、図11(d)に示すように、投入後約40分で炉温が200℃に達し、投入後約1時間で400℃に達した。また、基板40の減量率は19.7%であった。
As Comparative Example 2, the temperature in the heat treatment furnace 3 was set to 600 ° C., and 64 kg of the substrate 40 was charged per one of the heat-resistant containers (with no lid) 52 and roasted. As a result, as shown in FIG. 11D, the furnace temperature reached 200 ° C. in about 40 minutes after charging, and reached 400 ° C. in about 1 hour after charging. The weight loss rate of the substrate 40 was 19.7%.

実施例1として、熱処理炉3内の温度を600℃に設定し、耐熱容器2の一つ当たり基板40を92kg投入して焙焼した。その結果、図11(a)に示すように、投入後約40分で炉温が200℃に達し、投入後約1時間で400℃に達した。また、基板40の減量率は24.0%であった。   In Example 1, the temperature in the heat treatment furnace 3 was set to 600 ° C., and 92 kg of the substrate 40 was charged per one of the heat-resistant containers 2 and roasted. As a result, as shown in FIG. 11A, the furnace temperature reached 200 ° C. in about 40 minutes after charging, and reached 400 ° C. in about 1 hour after charging. The weight loss rate of the substrate 40 was 24.0%.

実施例2として、熱処理炉3内の温度を700℃に設定し、耐熱容器2の一つ当たり基板40を92kg投入して焙焼した。その結果、図11(b)に示すように、投入後30分が経過する前に炉温が200℃に達し、投入後約40分で400℃に達した。また、基板40の減量率は21.9%であった。   In Example 2, the temperature in the heat treatment furnace 3 was set to 700 ° C., and 92 kg of the substrate 40 was charged per one of the heat-resistant containers 2 and roasted. As a result, as shown in FIG. 11 (b), the furnace temperature reached 200 ° C. 30 minutes after charging, and reached 400 ° C. about 40 minutes after charging. The weight loss rate of the substrate 40 was 21.9%.

上記実験により、実施例1、2の方が比較例1、2よりも基板40の投入量が40%以上も多いにもかかわらず、プラスチック類の分解温度である200℃〜400℃に達するまでの時間が同等かそれよりも短く、すなわち温度上昇速度が高く、基板40の減量率も高く、不要なカーボンが燃焼したことが判る。従って、本発明によれば、従来に比較して廃電子基板を短時間に大量処理することができ、有用金属の回収効率を高めることが可能となる。   According to the above experiment, even though the input amount of the substrate 40 is more than 40% or more in Examples 1 and 2 than in Comparative Examples 1 and 2, until the decomposition temperature of plastics reaches 200 ° C. to 400 ° C. It can be seen that the time is the same or shorter, that is, the temperature rise rate is high, the weight loss rate of the substrate 40 is high, and unnecessary carbon has burned. Therefore, according to the present invention, a large amount of waste electronic substrates can be processed in a shorter time than in the past, and the recovery efficiency of useful metals can be increased.

1 廃電子基板の処理装置
2 耐熱容器
2a 内筒
2b 外筒
2c 車輪
2d 周面
2e 取っ手
2f ハンガー
2g スリット
2h 筒状部材
2j 底面
2k 曲折部
2m スリット
3 熱処理炉
4 容器搬送装置
4a プッシャー部
4b プルアウト部
4c 爪
7 炉壁
7a 開口部
7b 炉体扉
8(8A〜8D) ガスバーナー
11(11A〜11D) ノズル
13 温度計
14 圧力計
17 炉床
18 モータ
19 炉床回転装置
21 スライドベース
22 ベース移動装置
22a モータ
22b シャフト
23 炉前室
24 炉前室扉
25 スタンド
27 二次燃焼室
28 排気管
28a 先端
29 ファン
30 ファン
31 煙突
32 温度計
33 ダンパー
34 ガスバーナー
40 廃電子基板
DESCRIPTION OF SYMBOLS 1 Waste electronic board processing apparatus 2 Heat-resistant container 2a Inner cylinder 2b Outer cylinder 2c Wheel 2d Peripheral surface 2e Handle 2f Hanger 2g Slit 2h Cylindrical member 2j Bottom surface 2k Bent portion 2m Slit 3 Heat treatment furnace 4 Container transport device 4a Pusher portion 4b Pull-out Part 4c Claw 7 Furnace wall 7a Opening 7b Furnace body door 8 (8A-8D) Gas burner 11 (11A-11D) Nozzle 13 Thermometer 14 Pressure gauge 17 Hearth 18 Motor 19 Hearth rotating device 21 Slide base 22 Base movement Device 22a Motor 22b Shaft 23 Furnace chamber 24 Furnace chamber door 25 Stand 27 Secondary combustion chamber 28 Exhaust pipe 28a Tip 29 Fan 30 Fan 31 Chimney 32 Thermometer 33 Damper 34 Gas burner 40 Waste electronic board

Claims (8)

廃電子基板を収容する有底円筒状の耐熱容器であって、側面に形成されるスリットと、内部底面の中央部から鉛直方向に延設されると共に、側面に複数の開口が穿設される筒状部材とを有する耐熱容器と、
円筒状の炉壁を有し、該炉壁の内面に沿って水平方向に燃料を噴出するバーナーと、上面視円形の天井部の中心部に排気管とを有する熱処理炉と、
該熱処理炉に前記耐熱容器を投入及び排出可能な容器搬送装置とを備えることを特徴とする廃電子基板の処理装置。
A bottomed cylindrical heat-resistant container for housing a waste electronic substrate, wherein the slit is formed on a side surface, and extends vertically from a central portion of an inner bottom surface, and a plurality of openings are formed on the side surface. A heat-resistant container having a tubular member,
A heat treatment furnace having a cylindrical furnace wall, a burner that ejects fuel in a horizontal direction along the inner surface of the furnace wall, and an exhaust pipe in the center of a circular ceiling viewed from above,
A waste electronic substrate processing apparatus, comprising: a container transfer device capable of loading and unloading the heat-resistant container into and from the heat treatment furnace.
前記スリットは、水平方向に延設され、鉛直方向に複数段にわたって設けられることを特徴とする請求項1に記載の廃電子基板の処理装置。   2. The apparatus according to claim 1, wherein the slit extends in a horizontal direction and is provided in a plurality of stages in a vertical direction. 3. 前記筒状部材の側面に穿設される開口の総面積は、該筒状部材の側面全体の面積の20%以上であることを特徴とする請求項1又は2に記載の廃電子基板の処理装置。   The processing of a waste electronic substrate according to claim 1, wherein a total area of an opening formed in a side surface of the cylindrical member is 20% or more of an area of the entire side surface of the cylindrical member. apparatus. 前記廃電子基板が前記スリットを介して前記耐熱容器の外部へ流出することを防止する流出防止手段を備えることを特徴とする請求項1、2又は3に記載の廃電子基板の処理装置。   The waste electronic substrate processing apparatus according to claim 1, further comprising an outflow prevention unit configured to prevent the waste electronic substrate from flowing out of the heat-resistant container through the slit. 廃電子基板を収容する有底円筒状の耐熱容器であって、側面に形成されるスリットと、内部底面の中央部から鉛直方向に延設されると共に、側面に複数の開口が穿設される筒状部材とを有する耐熱容器と、
円筒状の炉壁を有し、該炉壁の内面に沿って水平方向に燃料を噴出するバーナーと、上面視円形の天井部の中心部に排気管とを有する熱処理炉と、
該熱処理炉に前記耐熱容器を投入及び排出可能な容器搬送装置とを備える処理装置を用い、
前記熱処理炉に投入された前記耐熱容器をその外側から前記バーナーで加熱して前記耐熱容器内部の前記廃電子基板を焙焼して炭化混合物を分離することを特徴とする廃電子基板の処理方法。
A bottomed cylindrical heat-resistant container for housing a waste electronic substrate, wherein the slit is formed on a side surface, and extends vertically from a central portion of an inner bottom surface, and a plurality of openings are formed on the side surface. A heat-resistant container having a tubular member,
A heat treatment furnace having a cylindrical furnace wall, a burner that ejects fuel in a horizontal direction along the inner surface of the furnace wall, and an exhaust pipe in the center of a circular ceiling viewed from above,
Using a processing apparatus having a container transfer device capable of charging and discharging the heat-resistant container to the heat treatment furnace,
A method for treating a waste electronic substrate, comprising: heating the heat-resistant container placed in the heat treatment furnace from the outside with the burner to roast the waste electronic substrate inside the heat-resistant container to separate a carbonized mixture. .
前記耐熱容器に収容する廃電子基板を予め最大寸法150mm以下に破砕することを特徴とする請求項5に記載の廃電子基板の処理方法。   The method for treating a waste electronic substrate according to claim 5, wherein the waste electronic substrate housed in the heat-resistant container is crushed in advance to a maximum size of 150 mm or less. 前記熱処理炉の内部温度を600℃以上700℃以下に調節することを特徴とする請求項5又は6に記載の廃電子基板の処理方法。   The method according to claim 5, wherein the internal temperature of the heat treatment furnace is adjusted to 600 ° C. or more and 700 ° C. or less. 前記熱処理炉の排気管を介して排出されたガスをセメント焼成装置のプレヒータの350℃以上の領域に導入することを特徴とする請求項5、6又は7に記載の廃電子基板の処理方法。   8. The method for treating a waste electronic substrate according to claim 5, wherein the gas discharged through an exhaust pipe of the heat treatment furnace is introduced into a region of 350 ° C. or higher of a preheater of a cement firing apparatus.
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