JP6651769B2 - Wiring pattern and manufacturing method thereof - Google Patents

Description

  The present disclosure relates to a wiring pattern and a method for manufacturing the same, and more particularly, to a wiring pattern that requires high miniaturization and high density, and a method for manufacturing a wiring pattern for efficient and low-cost manufacturing.

  For the purpose of increasing the density and performance of semiconductor packages, mounting forms in which chips with different performances are mixed in one package have been proposed, and high-density interconnect technology between chips that is excellent in cost has become important. (For example, see Patent Document 1).

A package-on-package that connects different packages on a package by stacking them by flip-chip mounting is widely used in smartphones and tablet terminals (for example, see Non-Patent Documents 1 and 2).
Further, as a form for mounting at high density, a package technique using an organic substrate having high-density wiring (organic interposer), a fan-out type package technique having through-mold via (TMV) (FO-WLP), silicon Alternatively, a packaging technology using a glass interposer, a packaging technology using a through silicon via (TSV), a packaging technology using a chip embedded in a substrate for inter-chip transmission, and the like have been proposed.

  In particular, in the case of an organic interposer or FO-WLP, when semiconductor chips are mounted in parallel, a fine wiring pattern is required for high-density conduction (for example, see Patent Document 2).

JP-T-2012-529770 US2011 / 0221071

Application of Through Mold Via (TMV) as PoP Base Package, Electronic Components and Technology Conference (ECTC), 2008 Advanced Low Profile PoP Solution with Embedded Wafer Level PoP (eWLB-PoP) Technology, ECTC, 2012

  Conventionally, in order to form a fine wiring pattern, steps of forming a seed layer by sputtering, forming a resist, electroplating, removing the resist, and removing the seed layer have been required, and the process cost has been a problem. Therefore, it is strongly desired to produce fine wiring patterns at low cost.

  Further, with the increase in the size of the substrate, the heat generated at the time of sputtering may greatly reduce the tact time, and further reduce the yield.

  In addition, due to the miniaturization of the wiring pattern, it has been difficult to ensure the adhesion between the copper wiring pattern and the insulating layer.

  An object of the present disclosure is to provide a wiring pattern that can manufacture a high-density semiconductor device excellent in transmission between chips while achieving both good yield and reliability and at low cost.

  A first aspect of the present embodiment is a wiring pattern having a layer in which a resin composition is filled in voids of porous copper. In addition, the wiring pattern can be said to be a wiring pattern in which voids of porous copper are filled with a resin composition.

  A second aspect of the present embodiment is a semiconductor device using the above wiring pattern.

  A third aspect of the present embodiment includes (I) a step of applying a copper paste to apply a copper paste on a support, (II) a sintering step of sintering the applied copper paste, and (III) a step of obtaining And a step of filling the porous copper with the resin composition.

  According to the present embodiment, a sputtering process for forming the wiring is not required, and the resist process can be omitted. Therefore, the manufacturing cost can be significantly reduced as compared with the conventional process.

  According to the present embodiment, after the porous copper is formed, that is, after the conductive path is formed, the void is filled with the resin composition, so that the porous copper retains good electrical conductivity. At the same time, the toughness of the porous copper and the presence of the resin composition on the adherend surface can greatly improve the adhesion between the porous copper and the adherend. Therefore, a fine wiring pattern that achieves both high-density wiring and high reliability can be provided with a good yield.

It is sectional drawing which shows typically the state which applied the copper paste on the support body (the state which applied the copper paste application process). It is sectional drawing which shows the state which sintered the copper paste (the state which performed the sintering process) typically. It is sectional drawing which shows typically the process (filling process of a resin composition) of filling a resin composition into sintered copper paste. FIG. 2 is a cross-sectional view schematically illustrating a state in which the resin composition has been cured (a state in which the resin composition has been cured). It is sectional drawing which shows typically the state which applied the copper paste on the support body, and sintered (the state which applied the copper paste and the sintering process). It is sectional drawing which shows typically the process (filling process of a resin composition) of filling a resin composition into sintered copper paste. FIG. 2 is a cross-sectional view schematically illustrating a state in which the resin composition has been cured (a state in which the resin composition has been cured). It is sectional drawing which shows typically the state which formed the 1st insulating layer, and also formed the recessed part (state which performed the recessed part formation process). It is sectional drawing which shows typically the state which applied the copper paste on the 1st insulating layer (the state which applied the copper paste application process). It is sectional drawing which shows typically the state which sintered the copper paste on the 1st insulating layer (the state which performed the sintering process). It is sectional drawing which shows typically the process (filling process of a resin composition) which fills a copper paste with a resin composition. FIG. 2 is a cross-sectional view schematically illustrating a state in which the resin composition has been cured (a state in which the resin composition has been cured). FIG. 4 is a cross-sectional view schematically illustrating a state where the obtained first insulating layer and a mixture of porous copper and a resin composition are flattened (a state where a flattening step is performed). FIG. 4 is a cross-sectional view schematically showing a fine wiring layer obtained by forming a concave portion in a second insulating layer, forming a mixture of porous copper and a resin composition, and flattening the mixture. FIG. 4 is a cross-sectional view schematically illustrating a state in which a temporary fixing layer is formed on a support (a state in which a temporary fixing layer forming step is performed). It is sectional drawing which shows typically the state which applied the copper paste on the temporary fixing layer, and sintered (the state which applied the copper paste and the sintering process). It is sectional drawing which shows typically the process (filling process of a resin composition) of filling a resin composition into sintered copper paste. FIG. 2 is a cross-sectional view schematically illustrating a state in which the resin composition has been cured (a state in which the resin composition has been cured). FIG. 4 is a cross-sectional view schematically showing a state in which a first insulating layer is formed and further a concave portion is formed (a state in which a concave portion forming step is performed). It is sectional drawing which shows typically the state which applied the copper paste on the 1st insulating layer (the state which applied the copper paste application process). It is sectional drawing which shows typically the state which sintered the copper paste on the 1st insulating layer (the state which performed the sintering process). It is sectional drawing which shows typically the process (filling process of a resin composition) which fills a copper paste with a resin composition. FIG. 2 is a cross-sectional view schematically illustrating a state in which the resin composition has been cured (a state in which the resin composition has been cured). FIG. 4 is a cross-sectional view schematically illustrating a state where a first insulating layer and a mixture of porous copper and a resin composition are flattened (a state where a flattening process is performed). FIG. 4 is a cross-sectional view schematically showing a fine wiring layer obtained by forming a concave portion in a second insulating layer, forming a mixture of porous copper and a resin composition, and flattening the mixture. It is sectional drawing which shows typically the state which mounted the semiconductor element via the underfill material. FIG. 3 is a cross-sectional view schematically illustrating a state in which a semiconductor element is sealed with an insulating material. It is sectional drawing which shows the state which peeled the carrier and the temporary fixing layer typically. It is sectional drawing which shows typically the state which mounted the semiconductor element with the wiring layer sealed on the board | substrate. 5 is an electron micrograph of a layer in which voids of porous copper are filled with a resin composition.

  Hereinafter, the present embodiment will be described in detail with reference to the drawings. In the following description, the same or corresponding parts have the same reference characters allotted, and overlapping description will be omitted. In addition, the positional relationships such as up, down, left, and right are based on the positional relationships shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

In this specification and the claims, "left", "right", "front", "back", "up", "down", "up", "down", "first", "second", etc. When the terms are used, they are intended to be illustrative and do not necessarily imply that they are permanently in this relative position.
In addition, the term “layer” includes, in a plan view, a structure partially formed in addition to a structure formed over the entire surface. In addition, a structure overlapped with another material or a single structure is also included in the term.
Further, the term “step” is included in the term even if it is not clearly distinguishable from other steps as well as an independent step as long as the intended purpose of the step is achieved.
The numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively. In addition, in the numerical ranges described in stages in this specification, the upper limit or the lower limit of the numerical range of a certain stage may be replaced with the upper limit or the lower limit of the numerical range of another stage.

A method for manufacturing the fine wiring with wiring (wiring pattern) 100 shown in FIG. 4 according to the first embodiment of the present disclosure will be described.
Note that the method of manufacturing a semiconductor device according to the present disclosure is particularly suitable for a mode that requires miniaturization and multi-pins. Further, the wiring pattern of the present embodiment is particularly suitable for a semiconductor (which can also be referred to as a semiconductor device).

  A method for manufacturing the semiconductor package (semiconductor device) 100 will be described with reference to FIGS.

As shown in FIG. 1, first, a copper paste 2 is formed on a support 1 (a step of applying a copper paste). Thereby, the first copper paste 2 is formed on a part of the upper surface of the substrate 1.
Although the support 1 is not particularly limited, a silicon plate, a glass plate, a SUS plate, a substrate with a glass cloth, a substrate, a ceramic plate, a silicon carbide plate, a substrate with a semiconductor element, a sealing resin with a semiconductor element, polyethylene terephthalate (PET) ), Polyethylene naphthalate (PEN), polycarbonate, an insulating organic substrate, etc., and a support having a storage elastic modulus at 25 ° C. of 1 GPa or more (also referred to as a “support made of a highly rigid material”) is suitable. In addition, from the viewpoint of heat resistance in the heating step, a support having a 5% mass reduction temperature of 200 ° C. or more is preferable.

  The support 1 may be in a wafer shape, a panel shape, or a roll shape. Although the support 1 is not particularly limited, a wafer having a diameter of 200 mm, 300 mm or 450 mm, or a rectangular panel having a side of 300 to 700 mm is preferably used.

The copper paste 2 is not particularly limited, but the average particle diameter of the copper particles contained is preferably from 10 to 500 nm from the viewpoint of sinterability, and more preferably from 20 to 300 nm from the viewpoint of dispersibility. It is most preferably from 50 to 200 nm from the viewpoint of sinterability and filling properties for efficiently filling the resin after sintering.
The average particle size in the present specification is an arithmetic average value of the length of the major axis measured for 200 copper particles selected at random.

  The copper paste 2 is a material in which the copper particles are dispersed in a solvent. The solvent is not particularly limited, but a material having an alcohol group, an ester group, an amino group, or the like can be used.

The viscosity of the copper paste 2 can be selected according to the method of use. For example, when the conductor forming composition is applied to a screen printing method, the viscosity is preferably 0.1 to 30 Pa · s from the viewpoint of the film thickness uniformity.
Moreover, when applying to an inkjet printing method or a spray coat method, it is preferable that viscosity is 0.1-30 mPa * s from a paintability viewpoint.

  As a method for applying the copper paste 2, a screen printing method or an inkjet printing method is suitably used.

As shown in FIG. 2, the applied copper paste 2 is sintered to obtain porous copper 3 (sintering step). Here, “sintering” is defined as consolidating the copper paste 2 to impart conductivity.
Examples of the sintering method include sintering by heating, light sintering by irradiation with xenon flash, and sintering by microwave irradiation. Further, in order to reduce the resistance value of the porous copper, the atmosphere during the sintering process is preferably under an inert gas (for example, a nitrogen atmosphere). It is more preferable to use a reducing gas such as hydrogen, formic acid or the like.

  The sintering temperature is preferably from 80 to 200 ° C in that the sintering can be performed in a short time and the thermal denaturation of the insulating material layer can be suppressed. In order to obtain a lower volume resistance value, the sintering temperature is preferably from 120 to 200 ° C. More preferably, the temperature is more preferably 120 to 180 ° C. in order to obtain a denser copper layer (copper wiring pattern).

  The volume resistivity of the porous copper 3 obtained by sintering the copper paste 2 is preferably 30 μΩ · cm or less from the viewpoint of reliability of the semiconductor device, and is 20 μΩ · cm or less from the viewpoint of transmission speed. More preferably, from the viewpoint of suppressing heat generation, it is most preferably 10 μΩ · cm or less. The volume resistivity is obtained from a sheet resistance value measured by a four-end needle surface resistance measurement device and a film thickness measured by a measurement system (trade name “VertScan”, manufactured by Ryoka Systems Inc.) of a non-contact surface and a layer cross-sectional shape. It is a calculated value.

As shown in FIG. 3, the resin composition 4 is applied to the porous copper 3, the resin composition 4 is filled in the porous copper 3, and a mixture 5 of the resin composition 4 and the porous copper 3 is formed. Is obtained (coating process of the resin composition).
Since the porous copper 3 has a porous structure, when the resin composition 4 is applied on the porous copper 3, the applied resin composition 4 is filled inside the porous copper 3 to form the mixture 5. . The coating method of the resin composition 4 includes a printing method, an inkjet method, a spin coating method, a spray coating method, and the like.

  In this specification, “filling” means that the resin composition is present in the voids of the porous copper. That is, after filling the resin composition, the void may remain, or the resin composition may not be present in all the voids. That is, the resin composition may be present by spreading along the inner wall surface of the void portion of the porous copper. FIG. 30 illustrates an electron micrograph of a layer in which the resin composition is filled in the voids of porous copper in the present specification.

  The improvement of the adhesion to the adherend by filling is achieved by filling the voids of the porous copper with the resin composition so that the adherend adheres firmly to the resin composition and further adheres to the porous copper. It is thought to be due to the anchor effect with the body. Therefore, the adhesiveness to the material (substrate) that comes into contact with the wiring pattern of the present embodiment can be significantly improved. In this specification, the term "substrate" means a conductive material such as a pad or a bump that comes into contact with a wiring pattern, an insulating material formed on a side wall of a wiring, and the like, in addition to the support.

  The average diameter of the voids of the porous copper before filling with the resin composition is not particularly limited, but may be 100 to 4000 nm from the viewpoint of filling properties (easy filling efficiency) of the resin composition. From the viewpoint of conductivity, the thickness is more preferably 100 to 3000 nm. Further, from the viewpoint of more efficiently filling the resin composition after sintering, the thickness is preferably 200 to 2000 nm, and more preferably 100 to 1000 nm. The “average diameter of voids” in the present specification is an arithmetic mean value of the lengths of major axes measured for 200 voids randomly selected from a cross-sectional SEM.

The application amount of the resin composition 4 can be roughly calculated from the porosity calculated from a cross-sectional photograph of the porous copper 3. According to this estimation method, it is possible to suppress the presence of a large amount of the resin composition 4 on the porous copper 3 due to excessive application of the resin composition 4. The application amount of the resin composition 4 is preferably 10 to 150% by volume, and more preferably 20% by volume or more in order to provide good adhesiveness, based on the estimated required resin amount. More preferably, it is 50% by volume or more in order to make the porous copper 3 tougher. On the other hand, in order to shorten the process for removing the unnecessary resin composition 4, the coating amount of the resin composition 4 is preferably 100% by volume or less based on the estimated required resin amount. From the above, the coating amount of the resin composition 4 is most preferably 50 to 100% by volume based on the estimated required resin amount.
The “required resin amount” can be said to be a porosity, which can be calculated from the average diameter of the voids. In addition, the resin composition on the porous copper means that “a large amount of the resin composition 4 exists on the porous copper 3 due to the excessive application of the resin composition 4”.

  The method for filling the resin composition 4 is not particularly limited, but a method of applying a resin composition containing a solvent and drying the solvent, a method of not containing the solvent (or the amount of the solvent relative to the resin composition, Is less than 5% by mass), a method of laminating a resin film, and the like.

  In the present specification, the volume ratio of the resin composition in the layer in which the voids of the porous copper are filled with the resin composition is a value calculated by binarizing a cross-sectional SEM image, and is calculated by cross-sectional observation. be able to. For example, on one or both sides of a layer in which the resin composition is filled in the voids of the porous copper, when a resin layer or a metal layer is further formed, the resin is filled in the voids of the porous copper. The volume ratio is calculated using only the layers.

  The resin composition 4 formed on the porous copper 3 can be removed by a chemical treatment or a physical treatment. Specific examples include removal by dissolution, CMP treatment, fly cut treatment, plasma treatment, and the like. The fly cut processing means cutting flattening by a surface planar.

  In the present embodiment, after the porous copper 3 is formed, that is, after the conductive path is formed, the void portion of the porous copper 3 is filled with the resin composition 4. The porous copper 3 is toughened without impairing the electric conductivity, and furthermore, an adherend (an insulating layer such as a first insulating layer 6 described later so as to cover the support 1 or the porous copper 3). Is formed on the support 1, the adhesion to the insulating layer can be improved.

  The volume ratio of the resin composition 4 in the structure in which the voids of the porous copper are filled with the resin composition 4 is preferably 10 to 50%. When the volume ratio of the resin composition 4 is 10% or more, the adhesion strength to the adherend becomes good and the reliability tends to be improved. When the volume ratio of the resin composition 4 is 50% or less. , The electric resistance tends to decrease.

  In the present embodiment, plating can be grown by using a layer in which the voids of the porous copper are filled with the resin composition 4 as a seed layer. For example, when the structure in which the resin composition 4 is filled in the voids of the porous copper and the bulk copper such as plated copper are mixed, the resin composition 4 is placed in the voids of the porous copper except for the bulk copper part. The volume ratio of the resin composition 4 in the structure filled with is calculated.

  The control of the volume ratio of the resin composition 4 in the structure in which the resin composition 4 is filled in the voids of the porous copper can be achieved by controlling the porosity when forming the porous copper. Specifically, it can be largely changed depending on the sintering conditions such as the temperature, atmosphere, or time when sintering the copper paste 2.

  As the resin composition 4, for example, (A) a thermosetting resin can be preferably used. The thermosetting resin is not particularly limited as long as it is a component composed of a reactive compound that causes a crosslinking reaction by heat.For example, an acrylate resin, an epoxy resin, a cyanate ester resin, a maleimide resin, an allyl nadiimide resin, Contains phenolic resin, urea resin, melamine resin, alkyd resin, unsaturated polyester resin, diallyl phthalate resin, silicone resin, resorcinol formaldehyde resin, triallyl cyanurate resin, polyisocyanate resin, tris (2-hydroxyethyl) isocyanurate Resin, a resin containing triallyl trimellitate, a thermosetting resin synthesized from cyclopentadiene, a thermosetting resin obtained by trimerizing aromatic dicyanamide, and the like. Among them, an epoxy resin is preferable from the viewpoint that the adhesive strength at a high temperature can be improved. The thermosetting resin can be used alone or in combination of two or more.

  The resin composition preferably contains (B) a thermoplastic resin. As the thermoplastic resin, for example, acrylic resin, phenoxy resin, polyimide resin, polyamide imide resin, polyamide resin, polyurethane resin, polyurethane imide resin, polyurea resin, polybenzoxazole resin, polysiloxane resin, polyester resin, polyether resin, Phenol resins, phenol novolak resins, cresol novolak resins, polyketone resins, and the like are included. Further, these resins may have a glycidyl group, a phenolic hydroxyl group, an acrylate group, a carboxyl group or the like in the side chain.

  The resin composition may include (C) an adhesion aid. As the adhesion aid, for example, (C-1) a silane coupling agent, (C-2) a triazole-based compound or a tetrazole-based compound can be used.

  As the (C-1) silane coupling agent, a compound having a nitrogen atom is preferably used in order to improve the adhesion to copper. Specifically, N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-amino Propyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N-phenyl-3-aminopropyltrimethoxysilane, tris (trimethoxysilylpropyl) isocyanurate, 3-ureido Propyltrialkoxysilane, 3-isocyanatopropyltriethoxysilane and the like. The content of the (C-1) silane coupling agent is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the component (A) from the viewpoints of the effect of the addition, heat resistance, cost, and the like.

  (C-2) Triazole-based compounds include 2- (2′-hydroxy-5′-methylphenyl) benzotriazole, 2- (2′-hydroxy-3′-tert-butyl-5′-methylphenyl)- 5-chlorobenzotriazole, 2- (2′-hydroxy-3 ′, 5′-di-tert-amylphenyl) benzotriazole, 2- (2′-hydroxy-5′-tert-octylphenyl) benzotriazole, , 2'-Methylenebis [6- (2H-benzotriazol-2-yl) -4-tert-octylphenol], 6- (2-benzotriazolyl) -4-tert-octyl-6'-tert-butyl- 4'-methyl-2,2'-methylenebisphenol, 1,2,3-benzotriazole, 1- [N, N-bis (2-ethyl Xyl) aminomethyl] benzotriazole, carboxybenzotriazole, 1- [N, N-bis (2-ethylhexyl) aminomethyl] methylbenzotriazole, 2,2 ′-[[(methyl-1H-benzotriazol-1-yl ) Methyl] imino] bisethanol and the like.

  (C-2) As the tetrazole-based compound, 1H-tetrazole, 5-amino-1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, 1-methyl-5-ethyl-1H-tetrazole , 1-methyl-5-mercapto-1H-tetrazole, 1-phenyl-5-mercapto-1H-tetrazole, 1- (2-dimethylaminoethyl) -5-mercapto-1H-tetrazole, 2-methoxy-5- ( 5-trifluoromethyl-1H-tetrazol-1-yl) -benzaldehyde, 4,5-di (5-tetrazolyl)-[1,2,3] triazole, 1-methyl-5-benzoyl-1H-tetrazole and the like. No. The content of the (C-2) triazole-based compound or tetrazole-based compound is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the component (A) from the viewpoints of effects of addition, heat resistance, cost, and the like. preferable.

  These (C-1) silane coupling agent, (C-2) triazole-based compound or tetrazole-based compound may be used alone or in combination.

  Further, an ion scavenger can be added. The above-mentioned ion scavenger adsorbs ionic impurities and improves insulation reliability at the time of moisture absorption. Such ion scavengers are not particularly limited, and include, for example, triazine thiol compounds, and compounds known as copper harm inhibitors for preventing copper from ionizing and dissolving, such as phenol-based reducing agents. And inorganic compounds such as powdered bismuth-based, antimony-based, magnesium-based, aluminum-based, zirconium-based, calcium-based, titanium-based, and tin-based, and mixtures thereof.

  Specific examples of the ion scavenger include, but are not particularly limited to, inorganic ion scavengers (trade name “IXE-300” (antimony type), trade name “IXE-500” (bismuth type), trade name “IXE- 600 "(antimony / bismuth mixture), trade name" IXE-700 "(magnesium / aluminum mixture), trade name" IXE-800 "(zirconium), and trade name" IXE-1100 "(calcium) And both are manufactured by Toa Gosei Co., Ltd.). These can be used alone or in combination of two or more. The content of the ion scavenger is preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of the component (A) from the viewpoints of the effect of addition, heat resistance, cost, and the like.

In addition, as the resin composition 4, a curing agent, a curing accelerator, a filler, or the like can be appropriately added.
Further, as the resin composition 4, an alloy formation with the porous copper 3 or a hybrid metal material can be formed by adding a metal particle or a complex of copper, nickel, silver, palladium or the like. In addition, fillers such as silica, alumina, boron nitride, and carbon can be added. From the viewpoint of the filling property into the porous copper, the average of the major axis of the filler is preferably 500 nm or less, and more preferably 100 nm or less from the viewpoint of more uniform filling. The content of the filler in the filled resin is preferably 10% by mass or less based on the amount of the organic component from the viewpoint of the filling property of the porous copper.
The resin composition 4 may contain a solvent. The solvent used is not particularly limited, and examples thereof include ethyl lactate, N-methylpyrrolidinone, cyclohexanone, γ-butyrolactone, propylene glycol monomethyl ether acetate, and propylene glycol monomethyl ether.

The viscosity before filling of the resin composition 4 is preferably 5,000 mPa · s or less from the viewpoint of the filling property of the resin into the porous copper, and more preferably 2,000 mPa · s or less from the viewpoint of more uniformly filling. It is most preferably 1000 mPa · s or less from the viewpoint of suppressing formation of a large amount of the resin composition on the porous copper.
The viscosity of the resin composition can be measured, for example, using an EHD-type rotational viscometer (E-type viscometer, standard cone, manufactured by Tokyo Keiki Co., Ltd.) at a measurement temperature of 25 ° C. and a sample volume of 4 cc. As shown in Table 1, the number of rotations of the viscometer was set in accordance with the viscosity assumed for each sample, and the value after a lapse of 10 minutes from the start of the measurement was taken as the measured value.

As shown in FIG. 4, the resin pattern 4 of the mixture 5 can be cured to obtain the wiring pattern 20 (resin composition curing step). By curing, solvent resistance (also referred to as chemical resistance) is improved.
Specifically, after applying the resin composition 4, it is preferable to perform a heat treatment for drying the solvent and curing the resin.
The temperature of the heat treatment is not particularly limited, but is usually preferably 100 to 200 ° C from the viewpoint of low stress. The time of the heat treatment is usually 10 minutes to 3 hours.
The volume resistivity of the wiring pattern 20 obtained by applying the resin composition 4 to the porous copper 3 and hardening is preferably 30 μΩ · cm or less from the viewpoint of reliability of the semiconductor device, and 20 μΩ / cm from the viewpoint of transmission speed. Cm or less, and most preferably 10 μΩ · cm or less from the viewpoint of suppressing heat generation.

  The average coefficient of thermal expansion from room temperature to 120 ° C. after curing of the resin composition 4 is preferably 100 ppm / ° C. or less from the viewpoint of suppressing warpage, and is 80 ppm / ° C. or less from the viewpoint of high reliability. Is more preferable. Further, from the viewpoint of obtaining a stress relaxation property, the content is preferably 20 ppm / ° C. or more. The average coefficient of thermal expansion is such that the resin composition 4 is coated on a PET film with a release agent (trade name “A53”, manufactured by Teijin Dupont Film Co., Ltd.) using an applicator so that the film thickness after drying is 50 μm. Coated and dried in oven at 80 ° C. for 20 minutes. Using a thermomechanical analyzer (trade name “TMA / SS6000”, manufactured by Seiko Instruments Inc.), a sample obtained by thermosetting the obtained film at 180 ° C. for 1 hour was used for a film size of 4 mm × 35 mm and a load of 19.6 N. It can be calculated at a heating rate of 5 ° C./min and a measured temperature of 0 to 280 ° C.

  The room temperature elastic modulus of the resin composition 4 after curing is preferably 1 GPa or more from the viewpoint of adhesiveness, and is preferably 10 GPa or less from the viewpoint of stress relaxation. The elasticity at room temperature was determined by using a viscoelasticity analyzer (trade name “RSA-2”, manufactured by TA Instruments Japan Co., Ltd.) for a sample obtained by thermosetting the above resin composition 4 to a film size of 5 mm. × 30 mm, measured at a temperature rising rate of 5 ° C./min, a frequency of 1 Hz, and a measurement temperature of −50 to 300 ° C.

  The adherend (when an insulating material such as a first insulating layer 6 described later is formed on the support 1 so as to cover the support 1 or the wiring pattern 20), the wiring pattern 20 Is preferably 0.1 N / cm or more from the viewpoint of suppressing peeling problems during the process, and more preferably 0.2 N / cm or more from the viewpoint of imparting reflow resistance. From the viewpoint of temperature cycle resistance, it is most preferable that the thickness be 0.3 N / cm or more. The adhesive strength is the maximum value when measured at a feed rate of 50 mm / min using a small bench tester (trade name “EZ-S”, manufactured by Shimadzu Corporation).

With reference to FIGS. 5 to 14, a method of manufacturing the fine wiring (wiring pattern) 100a with a support according to the second embodiment of the present disclosure shown in FIG. 14 will be described.
The support 1 and the copper paste 2 used in the second embodiment are the same as the support 1 and the copper paste 2 used in the first embodiment.
The copper paste application step, the sintering step (FIG. 5), the resin composition filling step (FIG. 6), and the resin composition curing step (FIG. 7) are shown in FIG. 1 of the first embodiment, respectively. This is the same as the copper paste application step, the sintering step shown in FIG. 2, the resin composition filling step shown in FIG. 3, and the resin composition curing step shown in FIG.
The sintering step (FIG. 5), the resin composition filling step (FIG. 6), and the resin composition curing step (FIG. 7) include ordinary copper seed layer sputtering, resist coating and patterning, copper plating, resist removal, seeding. It can also be produced by a removal step.

As shown in FIG. 8, a first insulating layer 6 is formed of a first insulating material on the support 1 and the wiring pattern 20, and a recess 6a is formed on the surface of the first insulating layer 6 (recess formation). Process).
Examples of the first insulating material include liquid or film-like materials, and film-like materials are preferable from the viewpoint of film thickness flatness and cost. Further, from the viewpoint that a fine trench structure (recess 6a) can be formed, the filler size contained in the first insulating material has an average particle size of 500 nm or less, or the first insulating material does not contain filler. Is preferred.

  The laminating step of forming the first insulating layer 6 by lamination using the above film-like material as the first insulating material is preferably a low-temperature step. The first insulating material is preferably a photosensitive insulating film that can be laminated at 40 to 120 ° C. A photosensitive insulating film having a laminable temperature of 40 ° C. or higher does not have a strong tack at room temperature and tends to be hardly deteriorated in handleability. A photosensitive insulating film having a laminable temperature of 120 ° C. or less tends to have a small warp after the laminating step.

  The thickness of the first insulating material (also referred to as “the thickness of the first insulating layer”) is preferably 10 μm or less, more preferably 5 μm or less, and preferably 3 μm in order to form a fine trench structure. It is most preferred that: The thickness of the first insulating material is preferably 500 nm or more from the viewpoint of electrical reliability.

  The thermal expansion coefficient of the first insulating layer 6 after curing is preferably 80 ppm / ° C. or less from the viewpoint of suppressing warpage, and more preferably 70 ppm / ° C. or less from the viewpoint of high reliability. Further, the thermal expansion coefficient of the first insulating layer 6 is preferably 20 ppm / ° C. or more from the viewpoint of obtaining a stress relaxation property and a high-definition pattern.

The method for forming the concave portion 6a includes laser ablation, photolithography, imprint, and the like, but a photolithography process is preferable from the viewpoint of miniaturization and low cost. Therefore, a film-shaped photosensitive insulating material is most preferably used as the first insulating material.
In addition, a plurality of first insulating materials may be attached to each other to form the first insulating layer 6, or a plurality of first insulating materials may be sequentially laminated to form a first insulating layer. 6 may be formed.

  As a method for exposing the film-shaped photosensitive insulating material, a normal projection exposure method, a contact exposure method, a direct drawing exposure method, or the like can be used. As a developing method, sodium carbonate or an alkaline aqueous solution of TMAH can be used. It is preferable to use

  After forming the recess 6a, the first insulating layer 6 may be further heated and cured. The heating temperature is 100 to 200 ° C. from the viewpoint of low stress, and the heating time is usually 30 minutes to 3 hours.

  Further, a step of applying the copper paste 2 on the first insulating layer 6 having the concave portions 6a shown in FIG. 9 (a step of applying a copper paste), and sintering the applied copper paste 2 shown in FIG. Step of obtaining porous copper 3 (sintering step), step of filling resin composition 4 into porous copper 3 shown in FIG. 11 (filling step of resin composition), and resin composition shown in FIG. The step of curing the resin composition 4 and obtaining a mixed film 20a of the cured resin composition 4 and the porous copper 3 (curing step of the resin composition) is performed by applying the copper paste shown in FIG. 1 of the first embodiment, respectively. This is the same as the step, the sintering step shown in FIG. 2, the application step of the resin composition shown in FIG. 3, and the curing step of the resin composition shown in FIG.

  Furthermore, copper plating may be grown on the mixed film 20a by an electroless plating method or an electrolytic plating method.

Next, as shown in FIG. 13, the first insulating layer 6 and the mixed film 20a are flattened (flattening step). By the planarization process, the mixed film 20a becomes the wiring pattern 20, and the first fine wiring layer 60 on which the wiring pattern 20 and the first insulating layer 6 are formed is formed.
Examples of the flattening method include chemical etching, CMP, fly cut, and the like, and these can be used in combination. As a method of flattening, fly-cutting is preferable from the viewpoint of satisfactorily flattening the interface between different materials (the interface between the first insulating layer 6 and the mixed film 20a), and specifically, (trade name “Surface Planer DFS8910”). , "Surface Planer DFS 8920" and "Surface Planer DFS 8930" are all preferably used by Disco Corporation.

  As shown in FIG. 14, a second fine wiring layer 70 is further formed on the first fine wiring layer 60. Specifically, on the first fine wiring layer 60, a copper paste application step (corresponding to FIG. 5), a sintering step (corresponding to FIG. 5), a resin composition filling step (corresponding to FIG. 6), After performing the curing process (corresponding to FIG. 7) of the resin composition, the second insulating resin layer 7 is formed using the second insulating resin material, and further, the concave portion forming step of forming the concave portion 7a (FIG. 8) ), A copper paste application step (corresponding to FIG. 9), a sintering step (corresponding to FIG. 10), a resin composition filling step (corresponding to FIG. 11), and a resin composition curing step (corresponding to FIG. 12). Then, a flattening step (corresponding to FIG. 13) is performed to form a second fine wiring layer 70, and a support 100a with fine wiring is manufactured.

  A method of manufacturing the semiconductor package (semiconductor device) 101 according to the embodiment of the present disclosure will be described with reference to FIGS.

As shown in FIG. 15, the temporary fixing layer 11 is formed on the support 14 (temporary fixing layer forming step).
The method for forming the temporary fixing layer 11 to be used is not particularly limited, and examples thereof include spin coating, spray coating, and lamination.

As the temporary fixing layer 11, for example, a resin containing a nonpolar component such as polyimide, polybenzoxazole, silicon, and fluorine, a resin containing a component that expands or foams by heating or UV, and a crosslinking reaction by heating or UV. A resin containing a component that proceeds, a resin that generates heat by light irradiation, or the like can be used.
The temporary fixing layer 11 is preferably a temporary fixing layer that is easily peeled off by an external stimulus such as light or heat so that handleability and carrier releasability are highly compatible.
As the temporary fixing layer 11, a temporary fixing layer containing particles that expand in volume by heat treatment is most preferably used because it can be easily peeled off without remaining on the semiconductor device.

  The copper paste application step and the sintering step (FIG. 16), the resin composition application step (FIG. 17), and the resin composition curing step (FIG. 18) are each performed as shown in FIG. 5 of the second embodiment. This is the same as the step, the step of filling the resin composition shown in FIG. 6, and the step of curing the resin composition shown in FIG. The steps shown in FIGS. 16, 17 and 18 can also be formed by ordinary steps such as copper seed layer sputtering, resist coating and patterning, copper plating, resist removal, and seed removal. Further, the copper foil can also be manufactured by processes such as lamination, resist coating and patterning, etching, and resist removal.

  Forming a first insulating layer 6 using a first insulating material to form a concave portion 6a (FIG. 19), applying a copper paste (FIG. 20), sintering process (FIG. 21), and resin The first insulating layer 6, the porous copper 3, the resin composition 4, and the composition filling step (FIG. 22), the resin composition curing step (FIG. 23), and the fine wiring layer 60 are obtained. The flattening step (FIG. 24) for flattening the mixture 5 of FIG. 3 includes a concave part forming step (FIG. 8), a copper paste application step (FIG. 9), a sintering step (FIG. 10), and a resin composition filling. This is the same as the step (FIG. 11), the step of curing the resin composition (FIG. 12), and the step of flattening (FIG. 13), and the step of repeating these steps to form a plurality of fine wiring layers 60 (FIG. 25). This is the same as the method described above.

As shown in FIG. 26, the semiconductor element 80 is mounted on the obtained fine wiring layer 60 via the underfill material 10.
As the underfill material 10, a capillary underfill (CUF), a mold underfill (MUF), a paste underfill (NCP), a film underfill (NCF), and a photosensitive underfill can be used. The electrode 8 of the element and the electrode 9 of the substrate are metal-connected. As a method of metal connection by thermocompression bonding, for example, a solder 8a may be formed between the electrode 8 and the electrode 9, and the electrode 8 and the electrode 9 may be metal-connected by soldering. The solder 8a may have, for example, a ball shape or a shape formed by plating or printing. The electrode 9 is formed on the uppermost fine wiring layer 60. The electrode 9 can be formed, for example, by using a printing apparatus such as an inkjet method using a copper paste.

  Examples of the semiconductor element 80 include, but are not limited to, a graphic processing unit GPU, a volatile memory such as a DRAM or an SRAM, a nonvolatile memory such as a flash memory, an RF chip, and a chip having a performance obtained by combining these. A photonics chip, a MEMS, or a sensor chip can be used. Further, a semiconductor element having a TSV can be used.

  As the semiconductor element 80, a stacked element can be used. For example, a stacked element using a TSV can be used. The thickness of the semiconductor element 80 is preferably 200 μm or less, and more preferably 100 μm or less from the viewpoint of further reducing the thickness of the package. Further, from the viewpoint of handleability, the thickness is preferably 30 μm or more.

As shown in FIG. 27, the semiconductor element 80 is sealed with the insulating material 12.
The insulating material 12 can be a liquid, solid, sheet-like material, or the like, and can also be used as the underfill material 10 in FIG.

As shown in FIG. 26, the support 14 and the temporary fixing layer 11 are peeled off to manufacture the semiconductor element 102 with a wiring layer. As a result, a high-density semiconductor device excellent in transmission between chips can be manufactured with better yield and with easy economic benefits.
Examples of the peeling method for peeling the support 14 and the temporary fixing layer 11 include peel peeling, slide peeling, and heat peeling. Further, after peeling, it can be washed with a solvent, plasma or the like.
When the temporary fixing layer 11 contains a component that expands or foams by heating (foaming agent), the foaming agent rapidly foams at 200 ° C. or more from the viewpoint of the curing temperature and the sintering temperature of the insulating material. Is preferred. The peeled carrier can be recycled.

A copper pad or solder can be formed on the surface of the wiring layer from which the carrier has been peeled (the peeling surface of the fine wiring layer 60 at the bottom). The forming method is not particularly limited, but a copper paste, a solder paste, a molten solder, or the like can be formed by a method such as inkjet or printing. Alternatively, a resist may be formed, and the connection electrode portion may be formed by electrolytic plating or electroless plating.
The connection electrode section does not need to be formed of a single metal, and may include a plurality of metals. The connection electrode portion may include gold, silver, copper, nickel, indium, palladium, tin, bismuth, or the like.

As shown in FIG. 29, the sealed semiconductor element with a wiring layer is mounted on a substrate 13, and a semiconductor package 103 is manufactured. The substrate 13 includes, for example, a substrate core material 21 having the wiring 24, an insulating layer 22 formed on the substrate core material 21, and a substrate connecting material exposed from a part of the insulating layer 22 and connected to the wiring 24. 23.
The linear expansion coefficient of the substrate 13 to be mounted is preferably 30 ppm / ° C. or less from the viewpoint of suppressing the warpage of the package, and more preferably 20 ppm / ° C. or less from the viewpoint of obtaining high reliability.

  The method of manufacturing a semiconductor device according to an embodiment of the present disclosure has been described above, but the present disclosure is not limited to the above-described embodiment, and may be appropriately changed without departing from the gist of the present disclosure.

<Example 1>
(Preparation of copper paste)
To 91.5 g (0.94 mol) of copper hydroxide (Kanto Chemical Co., Ltd.) was added 150 mL of 1-propanol (Kanto Chemical Co., Ltd., special grade), and the mixture was stirred. Nonanoic acid (Kanto Chemical Co., Ltd., 90% 370.9 g (2.34 mol) were added. The obtained mixture was heated and stirred at 90 ° C. for 30 minutes in a separable flask. The resulting solution was filtered while heating, to remove undissolved substances. Thereafter, the mixture was allowed to cool, and the produced copper nonanoate was subjected to suction filtration and washed with hexane until the washing liquid became transparent. The obtained powder was dried in an explosion-proof oven at 50 ° C. for 3 hours to obtain copper (II) nonanoate. The yield was 340 g (96% by mass).

  15.01 g (0.040 mol) of copper (II) nonanoate obtained above and 7.21 g (0.040 mol) of anhydrous copper (II) acetate (special grade, Kanto Chemical Co., Ltd.) were placed in a separable flask, 22 mL of 1-propanol and 32.1 g (0.32 mol) of hexylamine (purity 99%, Tokyo Kasei Kogyo Co., Ltd.) were added and dissolved by heating and stirring at 80 ° C. in an oil bath. After transferring to an ice bath and cooling until the internal temperature became 5 ° C., 7.72 mL (0.16 mol) of hydrazine monohydrate (Kanto Chemical Co., Ltd.) was stirred in the ice bath. The molar ratio of copper: hexylamine is 1: 4. Then, the mixture was heated and stirred at 90 ° C. in an oil bath. At that time, the reduction reaction accompanied by foaming proceeded, and the reaction was completed within 30 minutes. The inner wall of the separable flask exhibited a copper luster and the solution turned dark red. Centrifugation was performed at 9000 rpm (rotation / min) for 1 minute to obtain a solid. The step of further washing the solid with 15 mL of hexane was repeated three times to remove an acid residue, thereby obtaining a copper cake containing copper-containing particles having copper luster.

  The cake (60 parts by mass) of the obtained copper-containing particles, terpineol (20 parts by mass), and isobornylcyclohexanol (trade name “Tersolve MTPH”, manufactured by Nippon Terpen Chemical Co., Ltd.) (20 parts by mass) were mixed. To produce a copper paste.

The above-mentioned copper paste is applied on a silicon wafer so that the thickness of porous copper obtained using an applicator is 2 μm, and heated to form porous copper 1, and a sample with porous copper is obtained. Was.
Heating is performed by using an atmosphere control type heating device (manufactured by Ayumi Industry Co., Ltd.), heating to 150 ° C. at a rate of 40 ° C./min. After controlling the concentration of formic acid in nitrogen to be 1000 ppm, the porous copper 1 was formed by heating to 180 ° C. at a rate of temperature increase of 20 ° C./min and holding for 30 minutes.

<Example 2>
A sample with porous copper was obtained under the same conditions as in Example 1 except that a copper paste was applied on non-alkali glass instead of a silicon wafer.

<Examples 3 to 5>
(Preparation of insulating material)
Cresol novolak resin (trade name "TR-4020G", Asahi Organic Materials Co., Ltd.) (100 parts by mass), 1,3,4,6-tetrakis (methoxymethyl) glycoluril (30 parts by mass), trimethylol Propane triglycidyl ether (40 parts by mass), triarylsulfonium salt CPI-310B (8 parts by mass), and methyl ethyl ketone (100 parts by mass) were blended to obtain an insulating material composition. The obtained insulating material composition is applied to a polyethylene terephthalate film (PET film) (trade name “A-53”, Teijin Dupont Film Co., Ltd.) and dried in an oven at 90 ° C. for 10 minutes to form a 5 μm thick insulating material. I got

The obtained insulating material was placed on a silicon wafer using a vacuum laminator (Nikko Materials Co., Ltd.) under the conditions of a stage temperature of 60 ° C., a diaphragm temperature of 60 ° C., a vacuum pressure of 90 Pa, a load of 0.5 MPa, and a time of 60 seconds. Laminated. The formed insulating material was entirely exposed to 400 mJ / cm ² using a high-precision parallel exposure machine (trade name “EXM-1172”, 365 nm, illuminance 13.0 mW / cm ² , Oak Manufacturing Co., Ltd.).
Next, the PET film was peeled off, and the exposed insulating material was heated at 85 ° C. for 4 minutes.
Thereafter, a paddle-compatible developing device (trade name: “AD-1200”, Mikasa Corporation) was used as a developing device, and a developing solution was developed using a 2.38% by mass aqueous solution of tetramethylammonium hydroxide for 30 seconds, and pure water for 20 seconds. Washed with water. The obtained sample was cured by heating at 180 ° C. for 1 hour using an oven.

  On the insulating material obtained by the above method, the above-mentioned copper paste is applied so that the porous copper obtained using an applicator has a thickness of 2 μm, and is heated to form porous copper 1; A sample was obtained.

<Examples 6 and 7>
In the same manner as in Example 3, a copper paste was applied onto an insulating material, and then heated to form porous copper 2 and obtain a sample with porous copper.
The heating was performed using an atmosphere control type heating apparatus (Ayumi Industry Co., Ltd.) in an atmosphere in which the oxygen concentration in nitrogen was 100 ppm or less, and the formic acid concentration in nitrogen was adjusted to 1000 ppm. The porous copper 2 was obtained by heating at 180 degreeC / minute and holding for 30 minutes.

(Preparation of resin composition)
[Synthesis of thermoplastic resin (B)]
200 g of deionized water, 40 g of butyl acrylate, 28 g of ethyl acrylate in a 500 cc separable flask equipped with a stirrer, a thermometer, a nitrogen purge device (nitrogen inflow tube), and a reflux condenser with a water receiver. Glycidyl methacrylate, 3 g, acrylonitrile 29 g, 1.8% aqueous polyvinyl alcohol solution 2.04 g, lauryl peroxide 0.41 g, and n-octyl mercaptan 0.07 g. Subsequently, after air in the system was removed by blowing N ₂ gas for 60 minutes, the temperature in the system was raised to 65 ° C. and polymerization was performed for 3 hours. Further, the temperature was raised to 90 ° C., and stirring was continued for 2 hours to complete the polymerization. The obtained transparent beads were separated by filtration, washed with deionized water, and then dried in a vacuum drier at 50 ° C. for 6 hours to obtain an acrylic rubber. When the acrylic rubber was measured by GPC, the weight average molecular weight of the acrylic rubber was 400,000 in terms of polystyrene. The Tg of the acrylic rubber was 8 ° C.

  The GPC was measured using GPC (trade name “SD-8022 / DP-820 / RI-8020”, Tosoh Corporation), using tetrahydrofuran as an eluent, and using a column (trade name “Gelpack GL-A150-S”). / GL-A160-S ", Hitachi Chemical Co., Ltd.).

  The Tg of the acrylic rubber was measured using a differential scanning calorimeter (DSC) (trade name “DSC8230”, Rigaku Corporation) at a temperature rising rate of 10 ° C./min and a measuring temperature of −80 to 80 ° C. did. In this case, the glass transition temperature is a midpoint glass transition temperature calculated from a change in calorific value by a method based on JIS K 7121: 1987.

  It was prepared with the composition shown in Table 2 to obtain resin compositions R-1, R-2 and R-3. Next, the respective resin compositions were applied on a silicon wafer, and the application conditions in a spin coating recipe in which the film thickness after heating and drying at 100 ° C. for 5 minutes on a hot plate was 400 nm were determined. Next, each resin composition was applied on the porous copper of the sample with the porous copper under the above-mentioned application conditions, and heated and dried at 100 ° C. for 5 minutes on a hot plate to obtain a sample.

  In Comparative Example 2, a resin-added copper paste prepared by previously blending 100 g of the resin composition R-1 with 100 g of the copper paste was applied on the insulating material in the same manner as in Example 3. Then, it heated on the same conditions as the porous copper 1.

HP7200H: Dicyclopentadiene type epoxy resin (DIC Corporation)
HPC-8000-65T: Active ester resin (DIC Corporation)
2P4MHZ: phenyl-4-methyl-5-hydroxymethylimidazole (Shikoku Chemical Industry Co., Ltd.)

  The obtained sample was heat-treated at 180 ° C. for 1 hour using an oven to obtain a mixed film of porous copper and a resin composition. Thereafter, using a plasma processing apparatus (trade name “PB-1000S”, Mori Engineering Co., Ltd.), plasma processing was performed on the porous copper under the conditions of oxygen 160 mL / min, argon 25 mL / min, output 500 W, and time 5 minutes. Unnecessary resin was removed.

(Evaluation of volume ratio of resin composition)
The volume ratio of the resin composition in the layer in which the voids of the porous copper were filled with the resin composition (also referred to as “volume ratio of the resin composition”) was calculated by binarizing the image of the cross-sectional SEM. . Table 3 shows the results. In Comparative Example 2, no porous copper was formed, and many copper particles remained.

  As Comparative Example 1, a sample in which the above-described resin composition was not applied to the sample with porous copper of Example 3 was used.

(Evaluation of adhesive strength)
The adhesive strength evaluation was performed using a 10 mm wide, 30 mm long polyimide adhesive tape for heat insulation (trade name “No. 360UL”, manufactured by Nitto Denko Corporation) using porous copper, plated copper, and porous copper and a resin composition. The adhesive strength was measured by using a small desktop tester (trade name "EZ-S", manufactured by Shimadzu Corporation) at a feed rate of 50 mm / min.
Those having an adhesive strength value exceeding 0.1 N / cm were designated as A, those having an adhesive strength of 0.03 to 0.1 N / cm were designated as B, and those having a value of less than 0.03 N / cm were designated as C. Table 3 shows the results.

(Evaluation of volume resistance value)
The volume resistance value is obtained by measuring the surface resistance value of a sample obtained by plasma-treating a mixed film of porous copper and a resin composition with a four-point needle surface resistance measurement device, and a measurement system for non-contact surface and layer cross-sectional shape (product (VertScan, manufactured by Ryoka Systems Inc.). A was obtained when the obtained volume resistivity was less than 30 μΩ · cm, B was obtained when the volume resistivity was 30 to 300 μΩ · cm, and C was obtained when the volume resistance exceeded 300 μΩ · cm. Table 3 shows the results.

* 1: Means a silicon wafer.
* 2: Means non-alkali glass.
* 3: For comparison, a mixture of a copper paste and a resin composition was used (has no porous structure).

1, 14: Support 2 ... Copper paste 3 ... Porous copper 4 ... Resin composition 5 ... Mixture 6 ... First insulating layer 6a ... Depressions 8, 9 ... Electrode 10 ... Underfill material 11 ... Temporary fixing layer 12 ... insulating material 13 ... substrate 20 ... wiring pattern 20a ... mixed film 21 ... substrate core material 22 ... insulating layer 23 ... substrate connecting material 24 ... wiring 60 ... first fine wiring layer 70 ... second fine wiring layer 80 ... semiconductor Element 100a ... Support 101 with fine wiring ... Semiconductor package (semiconductor device)
102 ... Semiconductor package (semiconductor element with wiring layer)
103 ... Semiconductor package (semiconductor device)

Claims (9)

A wiring pattern having a layer filled with a resin composition containing at least a thermoplastic resin in voids having an average diameter of 100 to 4000 nm of porous copper, wherein a volume ratio of the resin composition to the layer is 10 to 25. % And the volume resistivity is less than 30 μΩ · cm.   The thermoplastic resin is an acrylic resin, a phenoxy resin, a polyimide resin, a polyamide imide resin, a polyamide resin, a polyurethane resin, a polyurethane imide resin, a polyurea resin, a polybenzoxazole resin, a polysiloxane resin, a polyester resin, a polyether resin, and a phenol resin. The wiring pattern according to claim 1, wherein the wiring pattern is a phenol novolak resin, a cresol novolak resin, or a polyketone resin.   The wiring pattern according to claim 1, wherein the resin composition includes a thermosetting resin. The thermosetting resin is an acrylate resin, epoxy resin, cyanate ester resin, maleimide resin, allyl nadiimide resin, phenol resin, urea resin, melamine resin, alkyd resin, unsaturated polyester resin, diallyl phthalate resin, silicon resin, resorcinol Formaldehyde resin, triallyl cyanurate resin, polyisocyanate resin, resin containing tris (2-hydroxyethyl) isocyanurate, resin containing triallyl trimellitate, thermosetting resin synthesized from cyclopentadiene, or The wiring pattern according to claim 3 , wherein the wiring pattern is a thermosetting resin obtained by trimerizing aromatic dicyanamide.   The wiring pattern according to claim 1, wherein the resin composition is cured. (I) a copper paste application step of applying a copper paste on a support;
(II) a sintering step of sintering the applied copper paste under an inert gas atmosphere so that porous copper is obtained;
(III) in the air gap of the average diameter 100~4000nm the obtained porous copper, a layer resin composition is filled containing at least a thermoplastic resin by causing the resin composition Filling containing at least a thermoplastic resin A filling step of a resin composition to be formed , wherein a volume ratio of the resin composition to the layer is 10 to 25% ;
A method for producing a wiring pattern having a volume resistivity of less than 30 μΩ · cm. (IV) a curing step of curing the resin composition,
The method for manufacturing a wiring pattern according to claim 6, further comprising:   A semiconductor device obtained by using the wiring pattern according to claim 1.   An electronic component obtained by using the wiring pattern according to claim 1.