JP6637586B2 - 単層カーボンナノチューブネットワークを調製する方法 - Google Patents
単層カーボンナノチューブネットワークを調製する方法 Download PDFInfo
- Publication number
- JP6637586B2 JP6637586B2 JP2018501241A JP2018501241A JP6637586B2 JP 6637586 B2 JP6637586 B2 JP 6637586B2 JP 2018501241 A JP2018501241 A JP 2018501241A JP 2018501241 A JP2018501241 A JP 2018501241A JP 6637586 B2 JP6637586 B2 JP 6637586B2
- Authority
- JP
- Japan
- Prior art keywords
- swcnt
- network
- doping
- polymer
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002109 single walled nanotube Substances 0.000 title claims description 123
- 238000000034 method Methods 0.000 title claims description 52
- 238000000862 absorption spectrum Methods 0.000 claims description 50
- 238000010521 absorption reaction Methods 0.000 claims description 38
- 239000002019 doping agent Substances 0.000 claims description 36
- 230000007704 transition Effects 0.000 claims description 30
- 238000012546 transfer Methods 0.000 claims description 19
- 239000002800 charge carrier Substances 0.000 claims description 18
- -1 triethyloxonium hexachloroantimonate Chemical compound 0.000 claims description 13
- 239000007844 bleaching agent Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 8
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 description 123
- 239000010408 film Substances 0.000 description 92
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 91
- 239000000523 sample Substances 0.000 description 56
- 239000000243 solution Substances 0.000 description 44
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 40
- 230000006870 function Effects 0.000 description 37
- RXACYPFGPNTUNV-UHFFFAOYSA-N 9,9-dioctylfluorene Polymers C1=CC=C2C(CCCCCCCC)(CCCCCCCC)C3=CC=CC=C3C2=C1 RXACYPFGPNTUNV-UHFFFAOYSA-N 0.000 description 35
- 239000012528 membrane Substances 0.000 description 29
- 210000004379 membrane Anatomy 0.000 description 29
- 238000000151 deposition Methods 0.000 description 26
- 239000010409 thin film Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 25
- 229910052581 Si3N4 Inorganic materials 0.000 description 24
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 24
- 239000006185 dispersion Substances 0.000 description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 24
- 230000008021 deposition Effects 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 22
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 21
- 238000003775 Density Functional Theory Methods 0.000 description 21
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 21
- 229920002677 supramolecular polymer Polymers 0.000 description 21
- 238000005259 measurement Methods 0.000 description 19
- 239000007787 solid Substances 0.000 description 18
- 239000002041 carbon nanotube Substances 0.000 description 16
- 229910021393 carbon nanotube Inorganic materials 0.000 description 16
- 239000000460 chlorine Substances 0.000 description 16
- 229920001577 copolymer Polymers 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 230000037230 mobility Effects 0.000 description 16
- 238000004364 calculation method Methods 0.000 description 15
- 230000007423 decrease Effects 0.000 description 14
- 238000009826 distribution Methods 0.000 description 14
- 238000002835 absorbance Methods 0.000 description 13
- 238000004630 atomic force microscopy Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 12
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000004061 bleaching Methods 0.000 description 10
- 229920002098 polyfluorene Polymers 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 229910052801 chlorine Inorganic materials 0.000 description 9
- 238000007654 immersion Methods 0.000 description 9
- 241000894007 species Species 0.000 description 9
- 230000000875 corresponding effect Effects 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 229910052787 antimony Inorganic materials 0.000 description 7
- 230000001419 dependent effect Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 230000003993 interaction Effects 0.000 description 7
- 238000005507 spraying Methods 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 239000002071 nanotube Substances 0.000 description 6
- 238000009718 spray deposition Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000005470 impregnation Methods 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000004071 soot Substances 0.000 description 4
- 238000000089 atomic force micrograph Methods 0.000 description 3
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 3
- 239000001768 carboxy methyl cellulose Substances 0.000 description 3
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002114 nanocomposite Substances 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002841 Lewis acid Substances 0.000 description 2
- 239000002879 Lewis base Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002238 carbon nanotube film Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229920000547 conjugated polymer Polymers 0.000 description 2
- 239000013068 control sample Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000007323 disproportionation reaction Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000000155 isotopic effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000007848 Bronsted acid Substances 0.000 description 1
- 239000003341 Bronsted base Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 241001161843 Chandra Species 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920000291 Poly(9,9-dioctylfluorene) Polymers 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000011481 absorbance measurement Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000007513 acids Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000005284 basis set Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000007516 brønsted-lowry acids Chemical class 0.000 description 1
- 150000007528 brønsted-lowry bases Chemical class 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- WHDPTDWLEKQKKX-UHFFFAOYSA-N cobalt molybdenum Chemical compound [Co].[Co].[Mo] WHDPTDWLEKQKKX-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000004966 intestinal stem cell Anatomy 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 150000007527 lewis bases Chemical class 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000006199 nebulizer Substances 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- PDYNJNLVKADULO-UHFFFAOYSA-N tellanylidenebismuth Chemical compound [Bi]=[Te] PDYNJNLVKADULO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/002—Pretreatement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
- G01N2015/0038—Investigating nanoparticles
Description
本出願は、35U.S.C.§119の下で、2015年7月13日に出願された米国仮特許出願第62/191,911号、2015年8月28日に出願された米国仮特許出願第62/211,064号、および2016年4月1日に出願された米国仮特許出願第62/316,709号に対する優先権を主張し、それらの内容は、参照によりそれら全体が本明細書に組み込まれる。
米国政府は、米国エネルギー省と、国立再生可能エネルギー研究所の管理および運営組織であるAlliance for Sustainable Energy, LLCとの間の契約番号DE−AC36−08GO28308の下、本発明における権利を有する。
[1]各組のドープ条件下で複数の半導体性単層カーボンナノチューブ(s−SWCNT)ネットワークのそれぞれをドープするステップと、
上記各組のドープ条件下でドープされた上記複数のs−SWCNTネットワークの吸収スペクトルのブリーチ率の関数として熱電(TE)出力因子を決定するステップと、
上記関数を使用して、上記吸収スペクトルの上記ブリーチ率の範囲内の上記TE出力因子の1つを特定するステップと
により、s−SWCNTネットワークのための所望のドープ条件を決定するステップを含む方法であって、特定されたTE出力因子は、上記所望のドープ条件に対応する、方法。
[2]上記ドープするステップが、
上記s−SWCNTネットワークの電荷担体ドープレベルが飽和するまで、電荷移動ドーパントを含む溶液中に上記s−SWCNTネットワークを浸漬するステップと、
その後、上記s−SWCNTネットワークの上記電荷担体ドープレベルを低減するステップと
を含む、上記[1]に記載の方法。
[3]上記電荷移動ドーパントが、トリエチルオキソニウムヘキサクロロアンチモネート(OA)を含む、上記[2]に記載の方法。
[4]上記ドープするステップが、増加濃度の電荷移動ドーパントを含む溶液中にs−SWCNTネットワークを逐次浸漬するステップを含む、上記[1]に記載の方法。
[5]上記電荷移動ドーパントが、トリエチルオキソニウムヘキサクロロアンチモネート(OA)を含む、上記[4]に記載の方法。
[6]上記s−SWCNTネットワークのカーボンナノチューブの直径を調節することにより、上記s−SWCNTネットワークのバンドギャップを制御するステップをさらに含む、上記[1]に記載の方法。
[7]上記バンドギャップを、約1.0eVから約1.2eVの間の値を有するように制御する、上記[6]に記載の方法。
[8]上記s−SWCNTネットワークのカーボンナノチューブの周囲にラッピングされたポリマーの少なくとも一部を除去するステップをさらに含む、上記[1]に記載の方法。
[9]上記所望のドープ条件を決定する前に、
ポリフルオレン系ポリマーを使用して、多分散SWCNT煤からs−SWCNTを選択的に抽出するステップと、
上記s−SWCNTの超音波噴霧堆積を行って、上記s−SWCNTネットワークを形成するステップと
をさらに含む、上記[1]に記載の方法。
[10]上記所望のドープ条件下で、s−SWCNTネットワークをドープするステップをさらに含む、上記[1]に記載の方法。
[11]上記特定されたTE出力因子が、上記吸収スペクトルの上記ブリーチ率の上記範囲内の最大TE出力因子である、上記[1]に記載の方法。
[12]上記特定されたTE出力因子が、少なくとも340μWm −1 K −2 である、上記[1]に記載の方法。
[13]ドープされた半導体性単層カーボンナノチューブ(s−SWCNT)ネットワークを含み、上記s−SWCNTネットワークが、少なくとも340μWm −1 K −2 の熱電(TE)出力因子を有する、組成物。
[14]上記s−SWCNTネットワークが、約1.0eVから約1.2eVの間のバンドギャップを有する、上記[13]に記載の組成物。
[15]上記s−SWCNTネットワークが、トリエチルオキソニウムヘキサクロロアンチモネート(OA)でドープされている、上記[13]に記載の組成物。
本発明の例示的実施形態は、半導体性単層カーボンナノチューブ(s−SWCNT)のための所望のドープ(doping)条件を決定する方法を提供する。1つの例示的方法は、各組のドープ条件下で複数のs−SWCNTネットワークのそれぞれをドープするステップと、各組のドープ条件下でドープされた複数のs−SWCNTネットワークの吸収スペクトルのブリーチ率(fractional bleach)の関数としてTE出力因子を決定するステップと、関数を使用して、吸収スペクトルのブリーチ率の範囲内のTE出力因子の1つを特定するステップとを含み、特定されたTE出力因子は、所望のドープ条件に対応する。
Claims (13)
- 半導体性単層カーボンナノチューブ(s−SWCNT)ネットワークのための最大熱電(TE)出力因子を推定するための方法であって、順に、
ドープされていない状態で前記s−SWCNTネットワークの第1の吸収スペクトルを測定すること、
前記第1の吸収スペクトルにおける第1の励起子ピークエンベロープ(S 11 )または第2の励起子ピークエンベロープ(S 22 )の少なくとも1つの位置を決定すること、および
S 11 またはS 22 の少なくとも1つを含む範囲内で前記第1の吸収スペクトルを積分してA 0 を得ることにより、ドープされていない吸収値(A 0 )を決定するステップと、
少なくとも3つの異なるドープレベルについて前記s−SWCNTネットワークの第2の吸収スペクトルを測定すること、
前記ドープレベルの各々について前記第2の吸収スペクトルを前記範囲内で積分して、少なくとも3つのA i 値を得ること、および
前記ドープレベルの各々について電気伝導率を測定することにより、ドープされた吸収値(A i )を決定するステップと、
前記ドープレベルの各々について、
A 0 −A i の差;および
(A 0 −A i )/A 0 として定義されるブリーチ率(fractional bleach)値
を計算するステップと、
前記ドープレベルの各々について、前記ブリーチ率値対前記電気伝導率のプロットを作成するステップと、
前記プロットの傾きの変化に対応する遷移ブリーチ率値を決定するステップと
を含み、
前記遷移ブリーチ率値が、前記最大TE出力因子を提供するための最適なドープレベルに対応する、方法。 - 前記少なくとも3つのドープレベルが、
前記s−SWCNTネットワークの電荷担体ドープレベルが飽和するまで、電荷移動ドーパントを含む溶液中に前記s−SWCNTネットワークを浸漬すること、および
その後、前記s−SWCNTネットワークの前記電荷担体ドープレベルを低減することによって達成される、請求項1に記載の方法。 - 前記電荷移動ドーパントが、トリエチルオキソニウムヘキサクロロアンチモネート(OA)を含む、請求項2に記載の方法。
- 前記少なくとも3つのドープレベルが、増加濃度の電荷移動ドーパントを含む溶液中に前記s−SWCNTネットワークを逐次浸漬することによって達成される、請求項1に記載の方法。
- 前記電荷移動ドーパントが、トリエチルオキソニウムヘキサクロロアンチモネート(OA)を含む、請求項4に記載の方法。
- ドープされた半導体性単層カーボンナノチューブ(s−SWCNT)ネットワークを含み、前記s−SWCNTネットワークが、少なくとも340μWm−1K−2の熱電(TE)出力因子を有する、組成物。
- 前記s−SWCNTネットワークが、約1.0eVから約1.2eVの間のバンドギャップを有する、請求項6に記載の組成物。
- 前記s−SWCNTネットワークが、トリエチルオキソニウムヘキサクロロアンチモネート(OA)でドープされている、請求項6に記載の組成物。
- 前記範囲が、650nmから2400nmの間(上限値および下限値を含む)である、請求項1に記載の方法。
- 前記s−SWCNTネットワークが、0.8nmから1.8nmの間(上限値および下限値を含む)の直径を有するs−SWCNTを含む、請求項1に記載の方法。
- 前記遷移ブリーチ率値が、0.43から0.61の間(上限値および下限値を含む)にある、請求項1に記載の方法。
- 請求項1に記載の方法であって、
前記傾きの変化が、第1の線と第2の線の交点におけるものであり、
前記第1の線が、42,000S/mから112,000S/mの間(上限値および下限値を含む)の傾きを有し、
前記第2の線が、195,000S/mから787,000S/mの間(上限値および下限値を含む)の傾きを有する、方法。 - 前記最大TE出力因子が、139μWm −1 K −2 から349μWm −1 K −2 (上限値および下限値を含む)の間である、請求項1に記載の方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562191911P | 2015-07-13 | 2015-07-13 | |
US62/191,911 | 2015-07-13 | ||
US201562211064P | 2015-08-28 | 2015-08-28 | |
US62/211,064 | 2015-08-28 | ||
US201662316709P | 2016-04-01 | 2016-04-01 | |
US62/316,709 | 2016-04-01 | ||
PCT/US2016/042085 WO2017011551A1 (en) | 2015-07-13 | 2016-07-13 | Methods of preparing single-walled carbon nanotube networks |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018530903A JP2018530903A (ja) | 2018-10-18 |
JP6637586B2 true JP6637586B2 (ja) | 2020-01-29 |
Family
ID=57757611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018501241A Active JP6637586B2 (ja) | 2015-07-13 | 2016-07-13 | 単層カーボンナノチューブネットワークを調製する方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US10598614B2 (ja) |
EP (1) | EP3322669A4 (ja) |
JP (1) | JP6637586B2 (ja) |
KR (1) | KR20180039640A (ja) |
CN (1) | CN108367915B (ja) |
CA (1) | CA2994680A1 (ja) |
IL (1) | IL256542A (ja) |
WO (1) | WO2017011551A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6761473B2 (ja) * | 2016-07-11 | 2020-09-23 | 富士フイルム株式会社 | 熱電変換素子 |
JP7252531B2 (ja) * | 2018-10-31 | 2023-04-05 | 積水化学工業株式会社 | 樹脂フィルムの製造方法、熱電変換フィルムの製造方法、合わせガラスの製造方法及び熱電変換合わせガラスの製造方法 |
GB2579864A (en) * | 2018-12-18 | 2020-07-08 | Univ Limerick | Improvements relating to thermoelectric materials |
CN109742225B (zh) * | 2019-01-07 | 2020-08-11 | 东华大学 | 一种油胺掺杂n型碳纳米管热电材料及其制备方法和应用 |
US11787697B2 (en) * | 2020-09-14 | 2023-10-17 | Alliance For Sustainable Energy, Llc | Compositions having reduced thermal conductivities and methods of making the same |
CN112614931B (zh) * | 2020-12-16 | 2023-04-18 | 湖南科技学院 | 一种基于卟啉和石墨烯纳米带的分子热电器件设计方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9162883B2 (en) * | 2010-09-01 | 2015-10-20 | International Business Machines Corporation | Doped carbon nanotubes and transparent conducting films containing the same |
KR101680761B1 (ko) | 2010-09-17 | 2016-11-30 | 삼성전자주식회사 | 그래핀-폴리머 층상 복합체 및 그의 제조방법 |
CA2814993C (en) | 2010-10-18 | 2017-02-14 | Wake Forest University | Thermoelectric apparatus and applications thereof |
JP5670980B2 (ja) * | 2011-09-28 | 2015-02-18 | 富士フイルム株式会社 | 熱電変換材料及び熱電変換素子 |
JP5789580B2 (ja) | 2011-10-31 | 2015-10-07 | 富士フイルム株式会社 | 熱電変換材料及び熱電変換素子 |
-
2016
- 2016-07-13 KR KR1020187004251A patent/KR20180039640A/ko not_active Application Discontinuation
- 2016-07-13 CA CA2994680A patent/CA2994680A1/en not_active Abandoned
- 2016-07-13 US US15/741,895 patent/US10598614B2/en active Active
- 2016-07-13 CN CN201680051446.4A patent/CN108367915B/zh active Active
- 2016-07-13 WO PCT/US2016/042085 patent/WO2017011551A1/en active Application Filing
- 2016-07-13 JP JP2018501241A patent/JP6637586B2/ja active Active
- 2016-07-13 EP EP16825108.0A patent/EP3322669A4/en not_active Withdrawn
-
2017
- 2017-12-25 IL IL256542A patent/IL256542A/en unknown
-
2020
- 2020-02-07 US US16/784,892 patent/US10928334B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2018530903A (ja) | 2018-10-18 |
CN108367915B (zh) | 2022-03-18 |
EP3322669A4 (en) | 2019-03-20 |
CA2994680A1 (en) | 2017-01-19 |
US20200278307A1 (en) | 2020-09-03 |
CN108367915A (zh) | 2018-08-03 |
US20180194629A1 (en) | 2018-07-12 |
KR20180039640A (ko) | 2018-04-18 |
EP3322669A1 (en) | 2018-05-23 |
US10598614B2 (en) | 2020-03-24 |
US10928334B2 (en) | 2021-02-23 |
WO2017011551A1 (en) | 2017-01-19 |
IL256542A (en) | 2018-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6637586B2 (ja) | 単層カーボンナノチューブネットワークを調製する方法 | |
Wang et al. | Flexible thermoelectric materials and generators: challenges and innovations | |
Massetti et al. | Unconventional thermoelectric materials for energy harvesting and sensing applications | |
Blackburn et al. | Carbon‐nanotube‐based thermoelectric materials and devices | |
Culebras et al. | Enhanced thermoelectric performance of PEDOT with different counter-ions optimized by chemical reduction | |
Bharti et al. | Conductive polymers for thermoelectric power generation | |
Mytafides et al. | High-power all-carbon fully printed and wearable SWCNT-based organic thermoelectric generator | |
Balazs et al. | Lead‐Chalcogenide Colloidal‐Quantum‐Dot Solids: Novel Assembly Methods, Electronic Structure Control, and Application Prospects | |
Fukumaru et al. | Development of n-type cobaltocene-encapsulated carbon nanotubes with remarkable thermoelectric property | |
Zhou et al. | P-channel, n-channel thin film transistors and p− n diodes based on single wall carbon nanotube networks | |
Brohmann et al. | Temperature-dependent charge transport in polymer-sorted semiconducting carbon nanotube networks with different diameter distributions | |
Yun et al. | Advances in carbon‐based thermoelectric materials for high‐performance, flexible thermoelectric devices | |
Jung et al. | Efficient debundling of few-walled carbon nanotubes by wrapping with donor–acceptor polymers for improving thermoelectric properties | |
DE102010031829B4 (de) | Thermoelektrische Bauelemente mit dünnen Schichten | |
Yoon et al. | High efficiency doping of conjugated polymer for investigation of intercorrelation of thermoelectric effects with electrical and morphological properties | |
Nardes | On the conductivity of PEDOT: PSS thin films | |
Mai et al. | Anisotropic thermal transport in thermoelectric composites of conjugated polyelectrolytes/single-walled carbon nanotubes | |
Buks et al. | Growth mechanisms and related thermoelectric properties of innovative hybrid networks fabricated by direct deposition of Bi2Se3 and Sb2Te3 on multiwalled carbon nanotubes | |
Delacou et al. | Investigation of charge interaction between fullerene derivatives and single‐walled carbon nanotubes | |
Liu et al. | Molecular Doping of a Naphthalene Diimide–Bithiophene Copolymer and SWCNTs for n-Type Thermoelectric Composites | |
Vijitha et al. | Simulation-aided studies on the superior thermoelectric performance of printable PBDTT-FTTE/SWCNT composites | |
Liu et al. | Molecular Doping Modulation and Applications of Structure‐Sorted Single‐Walled Carbon Nanotubes: A Review | |
Kim et al. | Energy level modulation of small molecules enhances thermoelectric performances of carbon nanotube-based organic hybrid materials | |
Tonkikh et al. | Tunable Doping and Characterization of Single-Wall Carbon Nanotube Macrosystems for Electrode Material Applications | |
US11796488B2 (en) | Methods of preparing single-walled carbon nanotube networks |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180712 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190507 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190426 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190726 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191203 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191220 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6637586 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |