JP6625059B2 - 高アスペクト比構造を製造するデバイスおよび方法 - Google Patents
高アスペクト比構造を製造するデバイスおよび方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 43
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- 238000000576 coating method Methods 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 22
- 239000003792 electrolyte Substances 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 15
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- 239000010936 titanium Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 5
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910010707 LiFePO 4 Inorganic materials 0.000 description 6
- -1 LiMnPO 4 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004804 winding Methods 0.000 description 6
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 229910001416 lithium ion Inorganic materials 0.000 description 5
- 239000007773 negative electrode material Substances 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 239000007774 positive electrode material Substances 0.000 description 5
- 239000002200 LIPON - lithium phosphorus oxynitride Substances 0.000 description 4
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 4
- 229910015643 LiMn 2 O 4 Inorganic materials 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
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- 239000000203 mixture Substances 0.000 description 4
- 239000011295 pitch Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000002001 electrolyte material Substances 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
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- 229910003002 lithium salt Inorganic materials 0.000 description 3
- 159000000002 lithium salts Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 description 2
- 229910013063 LiBF 4 Inorganic materials 0.000 description 2
- 229910013684 LiClO 4 Inorganic materials 0.000 description 2
- 229910011281 LiCoPO 4 Inorganic materials 0.000 description 2
- 229910013870 LiPF 6 Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
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- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 239000002608 ionic liquid Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 2
- 229910001386 lithium phosphate Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
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- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910012735 LiCo1/3Ni1/3Mn1/3O2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- FDLZQPXZHIFURF-UHFFFAOYSA-N [O-2].[Ti+4].[Li+] Chemical compound [O-2].[Ti+4].[Li+] FDLZQPXZHIFURF-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 229910000625 lithium cobalt oxide Inorganic materials 0.000 description 1
- 229910002102 lithium manganese oxide Inorganic materials 0.000 description 1
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical compound [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 description 1
- VLXXBCXTUVRROQ-UHFFFAOYSA-N lithium;oxido-oxo-(oxomanganiooxy)manganese Chemical compound [Li+].[O-][Mn](=O)O[Mn]=O VLXXBCXTUVRROQ-UHFFFAOYSA-N 0.000 description 1
- 238000010137 moulding (plastic) Methods 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Description
最終的なマイクロピラーの形状は、丸形である必要はなく(任意の幾何学的な断面形状を有することができる)、幅広いピッチおよび配列を選択することができる。
箔の両側で陽極処理プロセスを行うことを選ぶことができる。このような両側陽極処理により、アルミニウムから多孔性アルミナへの陽極処理中に釣り合いのとれた堆積膨張圧を生じることができる。
Claims (27)
- 金属基板に形成された高アスペクト比構造のピラーを備える集電体を製造する方法であって、
前記金属基板の面上に細長く、かつ、整列されたナノ細孔構造を前記金属基板の面上にモノリシックに形成するステップと、
600nm以上の最小相互間距離を有するナノ細孔構造のピラーを形成するようにマイクロパターンが配列されたマスクで前記ナノ細孔構造をマスクするステップと、
前記ピラーを導電性にするステップと、
を含み、
前記高アスペクト比構造のピラーは、前記マイクロパターンのうちのナノ細孔材料を除去することによって形成されるナノ細孔マイクロ構造のピラーによって形成されることを特徴とする方法。 - ナノ細孔材料を除去する前に、穴のパターンがマスクされていないナノ細孔構造をメッキし、メッキされたナノ細孔構造のピラーを形成することにより、前記高アスペクト比構造のピラーを導電性にすることを特徴とする請求項1に記載の方法。
- 前記メッキは、無電解メッキ、または、電気メッキであることを特徴とする請求項2に記載の方法。
- 前記高アスペクト比構造のピラーは、ドット・パターンがマスクされていないナノ細孔材料を除去し形成される直立した壁面を有するマスクされたナノ細孔構造のピラーによって形成され、
前記ピラーの壁面を導電層で被覆することによって前記ピラーが導電性にされることを特徴とする請求項1に記載の方法。 - 前記被覆は、電気化学堆積(ECD)、PVD、CVD、ALD、またはCSDで行われることを特徴とする請求項4に記載の方法。
- 前記ピラーは、マスクされていない前記ナノ細孔構造を電解還元することによって導電性にされることを特徴とする請求項4に記載の方法。
- 前記金属基板は、アルミニウムまたはチタンであることを特徴とする請求項1〜請求項6のいずれか一項に記載の方法。
- 前記ピラーは、前記ピラーにコンフォーマルなコーティングを形成する連続した層で被覆されることを特徴とする請求項1〜請求項7のいずれか一項に記載の方法。
- 前記コーティングは、積層バッテリまたは光起電性積層であることを特徴とする請求項8に記載の方法。
- 前記積層は、固体状態電解質層であることを特徴とする請求項9に記載の方法。
- 前記積層構造を、前記高アスペクト比構造を平坦化する平坦化充填材で被覆するステップをさらに含むことを特徴とする請求項9に記載の方法。
- 前記金属基板は、有機箔の上に積み重ねられることを特徴とする請求項1〜請求項11のいずれか一項に記載の方法。
- 前記集電体は、ロール・ツー・ロール・プロセスで製造されることを特徴とする請求項1〜請求項12のいずれか一項に記載の方法。
- 細長く、かつ、整列されたナノ細孔構造のピラーが金属基板の面上にモノリシックに形成され、600nm超の最小相互間距離を有する前記金属基板内に形成されたピラーが高アスペクト比構造を有する集電体を含み、
前記ナノ細孔構造のピラーは導電性であることを特徴とする電子デバイス。 - 前記金属基板は、アルミニウムまたはチタンを含み、
前記高アスペクト比構造は、50ナノメートル以上の曲率半径を有するピラーからなることを特徴とする請求項14に記載の電子デバイス。 - 前記ピラーは、10マイクロメートルより高いことを特徴とする請求項15に記載の電子デバイス。
- 前記ピラーは、格子状の平坦領域によって分離された高アスペクト比のクラスタとして形成されることを特徴とする請求項14〜請求項16のいずれか一項に記載の電子デバイス。
- 前記基板は、高アスペクト比構造を形成する両面を有する金属箔であることを特徴とする請求項14〜請求項17のいずれか一項に記載の電子デバイス。
- 前記高アスペクト比構造の複数のピラーがコンフォーマルなコーティングが被覆され、コンフォーマルにコーティングされた高アスペクト比構造の間で隙間が設けられる、前記高アスペクト比構造であることを特徴とする請求項14〜請求項18のいずれか一項に記載の電子デバイス。
- 前記コーティングは、積層バッテリ、または光起電性積層、あるいはその両方であることを特徴とする請求項19に記載の電子デバイス。
- 前記積層バッテリは、固体状態電解質層を含むことを特徴とする請求項20に記載の電子デバイス。
- 前記積層バッテリは、10C以上のバッテリ充電Cレートにおいて第2の電極層の有効体積蓄積容量となるような厚さに、前記高アスペクト比構造上にコーティングされた第1の電極層を含むことを特徴とする請求項20または請求項21に記載の電子デバイス。
- 交互に積み重ねられた複数の集電体を有することを特徴とする請求項19〜請求項22のいずれか一項に記載の電子デバイス。
- 前記隙間は、前記高アスペクト比構造を平坦化して機械的に安定させる平坦化充填材が充填されることを特徴とする請求項19〜請求項23のいずれか一項に記載の電子デバイス。
- 前記充填材は、電極部分を形成する金属であることを特徴とする請求項24に記載の電子デバイス。
- 前記充填材は、前記集電体を積み重ねさせ、かつ、前記高アスペクト比構造を安定させる導電性接着剤であることを特徴とする請求項24〜請求項25に記載の電子デバイス。
- 前記金属基板は、有機箔上に積み重ねられることを特徴とする請求項14〜請求項26のいずれか一項に記載の電子デバイス。
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Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101773103B1 (ko) * | 2015-01-09 | 2017-08-30 | 주식회사 엘지화학 | 전극, 이의 제조방법, 이에 의해 제조된 전극 및 이를 포함하는 이차전지 |
CN107925054B (zh) | 2015-07-15 | 2021-10-22 | 荷兰应用自然科学研究组织Tno | 制造高纵横比结构的设备和方法 |
EP3391442B1 (en) * | 2015-12-16 | 2022-04-20 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Lithium battery current collector comprising conductive pillared structures on a substrate |
EP3261157A1 (en) | 2016-06-23 | 2017-12-27 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | A method of manufacturing a lithium battery |
JP6978102B2 (ja) * | 2017-05-15 | 2021-12-08 | ミリバット, インコーポレイテッドMillibatt, Inc. | 電解質の製造方法 |
US10950912B2 (en) | 2017-06-14 | 2021-03-16 | Milwaukee Electric Tool Corporation | Arrangements for inhibiting intrusion into battery pack electrical components |
TWI661599B (zh) * | 2017-12-04 | 2019-06-01 | 鈺邦科技股份有限公司 | 鋰電池結構及其鋰電池負電極箔 |
JP6870627B2 (ja) * | 2018-02-05 | 2021-05-12 | トヨタ自動車株式会社 | 電極集電体、全固体電池および電極集電体の製造方法 |
US10720670B2 (en) | 2018-02-08 | 2020-07-21 | International Business Machines Corporation | Self-aligned 3D solid state thin film battery |
US11233288B2 (en) | 2018-07-11 | 2022-01-25 | International Business Machines Corporation | Silicon substrate containing integrated porous silicon electrodes for energy storage devices |
JP7160731B2 (ja) * | 2019-03-20 | 2022-10-25 | トヨタ自動車株式会社 | 二次電池 |
FR3095721B1 (fr) * | 2019-05-02 | 2022-01-07 | Commissariat Energie Atomique | Dispositif de stockage et procédé de fabrication |
KR102446291B1 (ko) * | 2019-10-31 | 2022-09-22 | 삼성에스디아이 주식회사 | 전극판 제조 방법 및 이를 통해 제조된 전극판 |
KR102469788B1 (ko) * | 2021-02-22 | 2022-11-23 | (주)포인트엔지니어링 | 복합 몰드, 금속 성형물 및 그 제조방법 |
WO2022235064A1 (ko) * | 2021-05-07 | 2022-11-10 | (주)포인트엔지니어링 | 금속 구조체 및 그 제조방법 |
NL2030074B1 (en) | 2021-12-08 | 2023-06-22 | Lionvolt B V | Electrode with embeded pillar structure |
WO2023201063A1 (en) * | 2022-04-15 | 2023-10-19 | University Of Maryland, College Park | Conformal solid-state batteries and methods for producing and using the same |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6705152B2 (en) * | 2000-10-24 | 2004-03-16 | Nanoproducts Corporation | Nanostructured ceramic platform for micromachined devices and device arrays |
US7462774B2 (en) * | 2003-05-21 | 2008-12-09 | Nanosolar, Inc. | Photovoltaic devices fabricated from insulating nanostructured template |
FR2880197B1 (fr) * | 2004-12-23 | 2007-02-02 | Commissariat Energie Atomique | Electrolyte structure pour microbatterie |
US20060216603A1 (en) | 2005-03-26 | 2006-09-28 | Enable Ipc | Lithium-ion rechargeable battery based on nanostructures |
WO2008030215A2 (en) * | 2005-07-12 | 2008-03-13 | The Regents Of The University Of California | Method and apparatus for high surface area carbon structures with minimized resistance |
JP2007103349A (ja) | 2005-09-08 | 2007-04-19 | Seiko Epson Corp | 膜パターンの形成方法、有機el装置の製造方法、カラーフィルタ基板の製造方法、液晶表示装置の製造方法 |
JP5181413B2 (ja) | 2005-09-13 | 2013-04-10 | 日立電線株式会社 | 電気化学装置用電極、固体電解質/電極接合体及びその製造方法 |
WO2008059936A1 (fr) | 2006-11-15 | 2008-05-22 | Panasonic Corporation | Collecteur pour un accumulateur non aqueux, électrode plane d'accumulateur non aqueux et accumulateur non aqueux utilisant le collecteur |
CN101512800B (zh) | 2006-11-15 | 2011-06-08 | 松下电器产业株式会社 | 非水系二次电池用集电体、使用该集电体的非水系二次电池用电极板以及非水系二次电池 |
US8216712B1 (en) * | 2008-01-11 | 2012-07-10 | Enovix Corporation | Anodized metallic battery separator having through-pores |
US20080218939A1 (en) | 2007-03-09 | 2008-09-11 | Marcus Matthew S | Nanowire supercapacitor electrode |
JP2009043466A (ja) | 2007-08-07 | 2009-02-26 | Seiko Epson Corp | 有機el装置および電子機器 |
US7816031B2 (en) | 2007-08-10 | 2010-10-19 | The Board Of Trustees Of The Leland Stanford Junior University | Nanowire battery methods and arrangements |
EP2849265B1 (en) * | 2008-02-22 | 2021-05-12 | Colorado State University Research Foundation | Lithium-ion battery |
US10263277B2 (en) | 2008-02-25 | 2019-04-16 | Alliance For Sustainable Energy, Llc | Flexible thin film solid state lithium ion batteries |
WO2010032159A1 (en) | 2008-09-17 | 2010-03-25 | Nxp B.V. | 2d or 3d electrochemical device employing composit active electrodes |
US8624105B2 (en) * | 2009-05-01 | 2014-01-07 | Synkera Technologies, Inc. | Energy conversion device with support member having pore channels |
DE102009035745A1 (de) | 2009-08-01 | 2011-02-17 | Christian-Albrechts-Universität Zu Kiel | Elektrode für Lithium-Ionen Akkumulatoren |
DE102009043414B4 (de) | 2009-09-29 | 2016-09-22 | Siemens Aktiengesellschaft | Dreidimensionale Mikro-Struktur, Anordnung mit mindestens zwei dreidimensionalen Mikro-Strukturen, Verfahren zum Herstellen der Mikro-Struktur und Verwendung der Mikro-Struktur |
WO2011060023A2 (en) | 2009-11-11 | 2011-05-19 | Amprius Inc. | Preloading lithium ion cell components with lithium |
CN102687313A (zh) | 2009-11-11 | 2012-09-19 | 安普雷斯股份有限公司 | 用于电极制造的中间层 |
US20110129732A1 (en) * | 2009-12-01 | 2011-06-02 | Applied Materials, Inc. | Compressed powder 3d battery electrode manufacturing |
DE102009056530A1 (de) | 2009-12-04 | 2011-06-09 | Christian-Albrechts-Universität Zu Kiel | Nanodrahtstruktur mit freiliegenden, regelmäßig angeordneten Nanodrahtenden und Verfahren zur Herstellung einer solchen Struktur |
US9312540B2 (en) | 2009-12-10 | 2016-04-12 | William March Rice University | Conformal coating on nanostructured electrode materials for three-dimensional applications |
US20110189510A1 (en) | 2010-01-29 | 2011-08-04 | Illuminex Corporation | Nano-Composite Anode for High Capacity Batteries and Methods of Forming Same |
US20120094192A1 (en) | 2010-10-14 | 2012-04-19 | Ut-Battelle, Llc | Composite nanowire compositions and methods of synthesis |
WO2012105901A1 (en) | 2011-02-01 | 2012-08-09 | Qunano Ab | Lithium-ion battery comprising nanowires |
CN102263244B (zh) | 2011-06-29 | 2013-10-30 | 福州大学 | 一种用于锂离子电池的碳限域包覆Sn/MgO纳米线阵列的制备方法 |
WO2013019489A1 (en) | 2011-07-29 | 2013-02-07 | The Board Of Trustees Of The University Of Illinois | Three-dimensional (3d) porous electrode architecture for a microbattery |
EP2562851A1 (en) | 2011-08-23 | 2013-02-27 | Mustafa K. Ürgen | Method for producing an electrode material comprising nanowires |
US9012075B2 (en) | 2012-01-23 | 2015-04-21 | GM Global Technology Operations LLC | Fade-resistant high capacity electrodes for a lithium-ion battery |
US20130236781A1 (en) | 2012-03-06 | 2013-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for secondary battery and secondary battery |
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