JP6587870B2 - Micromechanical device and manufacturing method thereof - Google Patents
Micromechanical device and manufacturing method thereof Download PDFInfo
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- JP6587870B2 JP6587870B2 JP2015171855A JP2015171855A JP6587870B2 JP 6587870 B2 JP6587870 B2 JP 6587870B2 JP 2015171855 A JP2015171855 A JP 2015171855A JP 2015171855 A JP2015171855 A JP 2015171855A JP 6587870 B2 JP6587870 B2 JP 6587870B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000463 material Substances 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 36
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- -1 organic acid salt Chemical class 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 230000004931 aggregating effect Effects 0.000 claims description 4
- 150000004703 alkoxides Chemical class 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000003980 solgel method Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 150000004696 coordination complex Chemical class 0.000 claims description 2
- 239000010408 film Substances 0.000 description 47
- 238000001459 lithography Methods 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Measuring Fluid Pressure (AREA)
Description
本発明は、微細な可動部を備える微細機械装置およびその製造方法に関する。 The present invention relates to a fine mechanical device having a fine movable part and a method for manufacturing the same.
近年、スイッチやセンサにおいて機械的な動作で機能を発揮する微細機械装置を用いるＭＥＭＳ（Micro Electro Mechanical System）が重要視されている。ＭＥＭＳは、既に圧力センサや加速度センサとして使用され、ＬＳＩとともに重要な部品となってきている。ＭＥＭＳは、薄膜形成技術，フォトリソグラフィー技術，および各種のエッチング技術を用いた微細加工により、微細な可動構造体を備える立体的な構造を有している。 2. Description of the Related Art In recent years, MEMS (Micro Electro Mechanical System) using a micro mechanical device that performs a function by mechanical operation in switches and sensors has been regarded as important. MEMS have already been used as pressure sensors and acceleration sensors, and have become important components together with LSIs. The MEMS has a three-dimensional structure including a fine movable structure by fine processing using a thin film formation technique, a photolithography technique, and various etching techniques.
例えば、静電容量式の圧力センサでは、図４Ａ，図４Ｂに示すように、圧力によって変位する薄いダイアフラム４０１を、基板４０２の上に離間して支持部４０３で支持して配置している。基板４０２とダイアフラム４０１との間には空隙が存在し、空隙に面した箇所のそれぞれに電極（不図示）を対向して配置し、容量を形成する。被測定媒体の圧力はダイアフラム４０１の容量を形成する面とは反対側の面に印加され、この圧力印加でダイアフラム４０１の内、空隙に対応した部分が変形する。この変化に対応して上記電極間の距離が変化し、この変化に対応して電極間の容量が変化してセンサ出力となる。空隙が真空ならば、この圧力センサは絶対圧を計測することができる。 For example, in a capacitive pressure sensor, as shown in FIGS. 4A and 4B, a thin diaphragm 401 that is displaced by pressure is spaced apart and supported by a support portion 403 on a substrate 402. There is a gap between the substrate 402 and the diaphragm 401, and electrodes (not shown) are arranged facing each of the portions facing the gap to form a capacitor. The pressure of the medium to be measured is applied to the surface opposite to the surface forming the capacitance of the diaphragm 401, and the portion corresponding to the gap in the diaphragm 401 is deformed by this pressure application. Corresponding to this change, the distance between the electrodes changes, and in response to this change, the capacitance between the electrodes changes to provide a sensor output. If the air gap is a vacuum, this pressure sensor can measure absolute pressure.
このような微細機械装置では、変形した可動部の一部が基板に接合し、弾性力による反発では可動部が元に戻らなくなる場合がある（特許文献１，２，３，４，５，６参照）。この現象はスティッキングや固着などと呼ばれ、微細機械装置において問題となっている。例えば、静電容量式の隔膜真空計のように大気圧より小さな圧力を計測する圧力センサは、搬送・取り付け時やメンテナンス時に大気に曝されるため、計測範囲以上の過大な圧力が印加される状況が頻繁に発生する。このように過大な圧力が印加されると、受圧したダイアフラム４０１は、図４Ｃに示すように、実使用範囲を超えて大きく撓み、ダイアフラム４０１の一部が、基板４０２に接触（着底）してしまう。 In such a micro mechanical device, a part of the deformed movable part is bonded to the substrate, and the movable part may not return to its original state by repulsion due to elastic force (Patent Documents 1, 2, 3, 4, 5, 6). reference). This phenomenon is called sticking or sticking, and is a problem in micro mechanical devices. For example, pressure sensors that measure pressures lower than atmospheric pressure, such as capacitance diaphragm gauges, are exposed to the atmosphere during transport, installation, and maintenance, so excessive pressure exceeding the measurement range is applied. The situation occurs frequently. When an excessive pressure is applied in this way, the received diaphragm 401 bends greatly beyond the actual use range, as shown in FIG. 4C, and a part of the diaphragm 401 comes into contact (bottom) with the substrate 402. End up.
ダイアフラム４０１の厚みおよび変形領域の大きさ、また、ダイアフラム４０１の材料などの設計パラメータによって、上述した着底の状態は異なるが、多くの場合、着底によりスティッキングが発生する。圧力センサの場合、スティッキングが発生すると、圧力を除去してもダイアフラムが復帰せず、あたかも圧力が印加されているかのような出力を出してしまい、測定のエラーを招くことになる。特に、表面荒さ（Ｒｚ）が０．１〜数ｎｍと極めて平坦な基材から作製する微細機械装置では、大きな問題となっている。 The bottoming state described above varies depending on the thickness of the diaphragm 401, the size of the deformation region, and the design parameters such as the material of the diaphragm 401, but in many cases, sticking occurs due to the bottoming. In the case of a pressure sensor, if sticking occurs, the diaphragm will not return even if the pressure is removed, and an output will appear as if pressure is being applied, leading to a measurement error. In particular, a micro mechanical device manufactured from a very flat substrate having a surface roughness (Rz) of 0.1 to several nm is a big problem.
従来、上述したスティッキングを防止するために、可動部もしくは基板の少なくとも一方の向かい合う面に、突起などの微細な構造を形成して接触面積を減らして接触力を抑制するようにしている。具体的には、よく知られた半導体装置の製造技術を用い、微細機械装置を構成しているシリコンなどの半導体や石英などの基材に、微小な突起を形成している。例えば、公知のリソグラフィー技術およびエッチング技術によるパターニングで、数μｍの大きさの突起部を形成するようにしている。また、他の技術として、表面を安定化させる表面被膜を形成して発生する引力を小さくする方法、サンドブラストなどにより表面を荒らして突起を形成する方法もある。 Conventionally, in order to prevent the above-described sticking, a fine structure such as a protrusion is formed on at least one facing surface of the movable portion or the substrate to reduce the contact area and suppress the contact force. Specifically, fine protrusions are formed on a semiconductor such as silicon or a base material such as quartz constituting a micro mechanical device using a well-known semiconductor device manufacturing technique. For example, a projection having a size of several μm is formed by patterning using a known lithography technique and etching technique. Other techniques include a method of reducing the attractive force generated by forming a surface coating that stabilizes the surface, and a method of roughening the surface by sandblasting to form protrusions.
ところで、使用する環境に対応させて耐食性、耐圧性、耐熱性を持たせるために、サファイアなどの結晶材料やアルミナセラミックスなどの材料が、圧力センサには用いられているようになってきた。ところが、このような材料は、高い絶縁性を有し、シリコンやガラスなどの場合と比較してスティッキングがより発生しやすい。特に、ダイアフラムが薄い構造になると、数μｍ程度の大きさの突起物では有効な対策とならない。 By the way, in order to provide corrosion resistance, pressure resistance, and heat resistance corresponding to the environment to be used, crystal materials such as sapphire and materials such as alumina ceramics have been used for pressure sensors. However, such a material has high insulating properties, and sticking is more likely to occur as compared with silicon and glass. In particular, when the diaphragm has a thin structure, a protrusion having a size of about several μm is not an effective measure.
このため、サブμｍ以下のサイズの微小凹凸を形成する必用があるが、サファイアやアルミナセラミックスなどの材料は、高い機械的強度や高い耐食性，耐薬品性を有している反面、シリコンやガラスなどの材料よりも加工がしにくく、サブμｍ以下のサイズの微細加工が極めて困難である。 For this reason, it is necessary to form minute irregularities of sub-μm size, but materials such as sapphire and alumina ceramics have high mechanical strength, high corrosion resistance, and chemical resistance, but silicon, glass, etc. It is harder to process than these materials, and it is extremely difficult to perform microfabrication with a size of sub-μm or less.
また、表面を安定化させる表面被膜によりスティッキングを防止する技術もあるが、この場合、表面被覆に有機材料が使われることが多く、高温環境で用いられる場合や、ダイアフラムと基板との間の空間を真空にする構成では使用できない。 There is also a technology to prevent sticking with a surface coating that stabilizes the surface. In this case, organic materials are often used for the surface coating, and the space between the diaphragm and the substrate is often used in high-temperature environments. Cannot be used in a vacuum configuration.
上述したように、従来では、様々な環境で用いられる微細機械装置におけるスティッキングを防止することが容易に実現できないという問題があった。 As described above, conventionally, there has been a problem that it is not easy to prevent sticking in a micro mechanical device used in various environments.
本発明は、以上のような問題点を解消するためになされたものであり、様々な環境で用いられる微細機械装置におけるスティッキングが、より容易に防止できるようにすることを目的とする。 The present invention has been made to solve the above-described problems, and an object thereof is to more easily prevent sticking in a micromechanical device used in various environments.
本発明に係る微細機械装置の製造方法は、基板の上に支持部によって支持されて可動領域で基板と離間して配置され、可動領域で基板の方向に変位可能とされた可動部を備える微細機械装置の製造方法であって、可動領域で向かい合う基板および可動部の一方の面に、基板または可動部の他方の面に向かい合う平坦な上面を備える第１凸部を形成する第１工程と、第１凸部の上面に基板および可動部を構成する材料の成分を含む第１材料膜を形成する第２工程と、第１材料膜を加熱して焼成することで第１材料膜を凝集および結晶化させて第１凸部の上面に複数の第２凸部を形成する第３工程と、基板または可動部の他方の面の第１凸部に向かい合う領域に、基板および可動部を構成する材料の成分を含む第２材料膜を形成する第４工程と、第２材料膜を加熱して焼成することで第２材料膜を凝集および結晶化させて領域に第２凸部と同じ大きさの複数の第３凸部を形成する第５工程とを備える。 A method of manufacturing a micro mechanical device according to the present invention includes a micro machine including a movable unit supported on a substrate by a support unit and spaced apart from the substrate in the movable region and displaceable in the direction of the substrate in the movable region. A method of manufacturing a mechanical device, the first step of forming a first convex portion having a flat upper surface facing the other surface of the substrate or the movable portion on one surface of the substrate and the movable portion facing each other in the movable region; A second step of forming a first material film including a component of the material constituting the substrate and the movable part on the upper surface of the first convex part; and the first material film is agglomerated and heated by baking the first material film. The substrate and the movable part are formed in a region facing the first convex part on the other surface of the substrate or the movable part and the third step of forming a plurality of second convex parts on the upper surface of the first convex part by crystallization. A fourth step of forming a second material film containing a component of the material; And a fifth step of forming a second material layer 3 convex portions on the second material layer by sintering by heating is aggregated and crystallized region of the plurality as large as the second convex portion.
上記微細機械装置の製造方法において、基板および可動部を構成する材料は、サファイアもしくはアルミナセラミックスであり、第１材料膜および第２材料膜は、非晶質のアルミナから構成すればよい。 In the method for manufacturing a micro mechanical device, the material constituting the substrate and the movable part is sapphire or alumina ceramics, and the first material film and the second material film may be made of amorphous alumina.
上記微細機械装置の製造方法において、第１材料膜および第２材料膜は、原子層堆積法、スパッタ法、化学的気相成長法のいずれかにより形成すればよい。また、第１材料膜および第２材料膜は、ゾルゲル法により形成してもよい。また、第１材料膜および第２材料膜は、金属アルコキシド、金属錯体、金属有機酸塩のいずれかから構成された塗布膜を焼成することで形成してもよい。 In the manufacturing method of the micro mechanical device, the first material film and the second material film may be formed by any one of an atomic layer deposition method, a sputtering method, and a chemical vapor deposition method. Further, the first material film and the second material film may be formed by a sol-gel method. The first material film and the second material film may be formed by baking a coating film made of any of metal alkoxide, metal complex, and metal organic acid salt.
また、本発明に係る微細機械装置は、基板の上に支持部によって支持されて可動領域で基板と離間して配置され、可動領域で基板の方向に変位可能とされた可動部と、可動領域で向かい合う基板および可動部の一方の面に形成され、基板または可動部の他方の面に向かい合う平坦な上面を備える第１凸部と、第１凸部の上面に形成された複数の第２凸部と、基板または可動部の他方の面の第１凸部に向かい合う領域に形成された第２凸部と同じ大きさの複数の第３凸部とを備え、第２凸部および第３凸部は、基板および可動部を構成する材料の成分を含む材料膜を加熱して焼成することで材料膜を凝集および結晶化させて形成されたものである。 Further, the micromechanical device according to the present invention includes a movable unit supported on a substrate by a support unit and spaced apart from the substrate in the movable region, and movable in the direction of the substrate in the movable region. A first convex portion formed on one surface of the substrate and the movable portion facing each other and having a flat upper surface facing the other surface of the substrate or movable portion, and a plurality of second convex portions formed on the upper surface of the first convex portion. And a plurality of third convex portions having the same size as the second convex portions formed in a region facing the first convex portion on the other surface of the substrate or the movable portion, the second convex portion and the third convex portion The part is formed by aggregating and crystallizing the material film by heating and baking the material film containing the component of the material constituting the substrate and the movable part.
以上説明したことにより、本発明によれば、様々な環境で用いられる微細機械装置におけるスティッキングが、より容易に防止できるという優れた効果が得られる。 As described above, according to the present invention, it is possible to obtain an excellent effect that sticking in a micromechanical device used in various environments can be more easily prevented.
以下、本発明の実施の形態について図１Ａ、図１Ｂを参照して説明する。図１Ａは、本発明の実施の形態における微細機械装置の構成例を示す断面図である。また、図１Ｂは、本発明の実施の形態における微細機械装置の一部構成例を示す断面図である。図１Ｂは、図１Ａの一部を拡大して示している。 Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1A and 1B. FIG. 1A is a cross-sectional view illustrating a configuration example of a micromechanical device according to an embodiment of the present invention. FIG. 1B is a cross-sectional view showing a partial configuration example of the micromechanical device according to the embodiment of the present invention. FIG. 1B shows an enlarged part of FIG. 1A.
この微細機械装置は、基板１０１の上に支持部１０２によって支持されて可動領域１２１で基板１０１と離間して配置され、可動領域１２１で基板１０１の方向に変位可能とされた可動部１０３を備える。可動部１０３は、可動領域１２１の周囲の固定部で支持部１０２に固定されている。例えば、支持部１０２は、基板１０１に一体に形成されている。なお、可動部１０３の側に、可動部１０３と一体に支持部１０２が形成されているようにしてもよい。 This micromechanical device includes a movable unit 103 supported on a substrate 101 by a support unit 102 and spaced apart from the substrate 101 in a movable region 121 and displaceable in the direction of the substrate 101 in the movable region 121. . The movable portion 103 is fixed to the support portion 102 by a fixed portion around the movable region 121. For example, the support part 102 is formed integrally with the substrate 101. Note that the support portion 102 may be formed integrally with the movable portion 103 on the movable portion 103 side.
この微細機械装置は、例えば、可動部１０３がダイアフラムである圧力センサである。例えば、基板１０１および可動部１０３は、サファイアから構成され、図示していないが、可動部１０３および基板１０１の間の空隙における向かい合う面の各々には、電極が形成されている。受圧した可動部１０３が基板１０１の方向に変位することにより、各々の電極の間隔が変化し、容量が変化する。この容量変化により可動部１０３が受圧した圧力を測定する。電極形成領域が真空とされていれば、絶対圧力が測定可能な圧力センサとして用いることができる。 This micro mechanical device is, for example, a pressure sensor in which the movable portion 103 is a diaphragm. For example, the substrate 101 and the movable portion 103 are made of sapphire, and although not shown, electrodes are formed on each of the opposing surfaces in the gap between the movable portion 103 and the substrate 101. When the movable portion 103 that has received the pressure is displaced in the direction of the substrate 101, the interval between the electrodes changes, and the capacitance changes. The pressure received by the movable portion 103 due to this change in capacitance is measured. If the electrode formation region is vacuum, it can be used as a pressure sensor capable of measuring absolute pressure.
上述したような構成とされた微細機械装置において、実施の形態では、まず、可動領域１２１で向かい合う基板１０１の面１０１ａに形成され、可動部１０３の面１０３ａに向かい合う平坦な上面１０４ａを備える第１凸部１０４を備える。第１凸部１０４は、例えば、平面視円形とされた柱であり、直径が１〜数１０μｍとされている。また、この例では、複数の第１凸部１０４を備え、隣り合う第１凸部１０４の間隔は、例えば０．５ｍｍ程度とされている。 In the micro mechanical device having the above-described configuration, in the embodiment, first, a first upper surface 104a formed on the surface 101a of the substrate 101 facing the movable region 121 and having the flat upper surface 104a facing the surface 103a of the movable portion 103 is provided. Convex part 104 is provided. The first convex portion 104 is, for example, a column that is circular in plan view, and has a diameter of 1 to several tens of μm. In this example, a plurality of first convex portions 104 are provided, and the interval between adjacent first convex portions 104 is set to, for example, about 0.5 mm.
また、この微細機械装置は、第１凸部１０４の上面１０４ａに形成された複数の第２凸部１０５と、可動部１０３の面１０３ａの第１凸部１０４に向かい合う領域１２２に形成された第２凸部１０５と同じ大きさの複数の第３凸部１０６とを備える。直径１〜数１０μｍの円形領域に形成される複数の第２凸部１０５は、平面視の径および断面の高さが数ｎｍ〜数１００ｎｍの大きさであればよい。複数の第２凸部１０５により、第１凸部１０４の上面１０４ａは、数ｎｍ〜数１００ｎｍの面荒さの表面凹凸が形成されたものとなる。 In addition, this micro mechanical device includes a plurality of second convex portions 105 formed on the upper surface 104a of the first convex portion 104 and a first region 122 formed on the surface 122a of the movable portion 103 facing the first convex portion 104. A plurality of third convex portions 106 having the same size as the two convex portions 105 are provided. The plurality of second protrusions 105 formed in a circular region having a diameter of 1 to several tens of μm may have a diameter in plan view and a height of a cross section of several nanometers to several hundred nanometers. Due to the plurality of second protrusions 105, the upper surface 104a of the first protrusion 104 has surface irregularities with a surface roughness of several nm to several 100 nm.
直径１〜数１０μｍの円形領域に形成される複数の第３凸部１０６についても第２凸部１０５と同様であり、平面視の径および断面の高さが数ｎｍ〜数１００ｎｍの大きさであればよい。複数の第３凸部１０６により、可動部１０３の面１０３ａの領域１２２は、数ｎｍ〜数１００ｎｍの面荒さの表面凹凸が形成されたものとなる。 The plurality of third convex portions 106 formed in a circular region having a diameter of 1 to several tens of μm is the same as the second convex portion 105, and the diameter in plan view and the height of the cross section are several nm to several hundred nm. I just need it. Due to the plurality of third protrusions 106, the surface 122a of the surface 103a of the movable portion 103 is formed with surface irregularities having a surface roughness of several nanometers to several hundred nanometers.
上述した実施の形態における第２凸部１０５および第３凸部１０６は、基板１０１および可動部１０３を構成する材料の成分を含む材料膜を加熱して焼成することで材料膜を凝集および結晶化させて形成されたものである。このように形成された第２凸部１０５および第３凸部１０６を備える実施の形態によれば、微細加工によらず、サブμｍ以下のサイズの微小凹凸を形成しており、様々な環境で用いられる微細機械装置におけるスティッキングが、より容易に防止できる。 The second convex portion 105 and the third convex portion 106 in the embodiment described above aggregate and crystallize the material film by heating and baking the material film containing the components of the material constituting the substrate 101 and the movable portion 103. It is formed. According to the embodiment including the second convex portion 105 and the third convex portion 106 formed as described above, the minute irregularities having a size of sub-μm or less are formed regardless of the fine processing, and in various environments. Sticking in the micromechanical device used can be more easily prevented.
ところで、基板１０１と可動部１０３との間には、計測などの動作のために電圧が印加されているが、よく知られているようにこの印加電圧に起因してプルイン現象が発生し問題となる。局所的な面粗さ数ｎｍ〜数１００ｎｍの表面凹凸では、スティッキングは抑制できるが、この表面荒さでは、高さも高々数ｎｍ〜数１００ｎｍ程度にしかならず、上述したプルイン現象が防げない。これに対し、高さ数μｍの第１凸部１０４を備えることで、上記プルイン現象が抑制できるようになる。 By the way, a voltage is applied between the substrate 101 and the movable part 103 for an operation such as a measurement. As is well known, a pull-in phenomenon occurs due to this applied voltage. Become. Sticking can be suppressed with local surface roughness of several nanometers to several hundreds of nanometers. However, with this surface roughness, the height is only several nanometers to several hundred nanometers at most, and the pull-in phenomenon described above cannot be prevented. On the other hand, the pull-in phenomenon can be suppressed by providing the first convex portion 104 having a height of several μm.
以下、本発明の実施の形態における微細機械装置の製造方法について、図２Ａ〜図２Ｈを用いて説明する。図２Ａ〜図２Ｈは、本発明の実施の形態における微細機械装置の製造方法を説明するための途中工程の状態を示す断面図である。 Hereinafter, a method for manufacturing a micro mechanical device according to an embodiment of the present invention will be described with reference to FIGS. 2A to 2H. 2A to 2H are cross-sectional views illustrating states of intermediate steps for explaining a method for manufacturing a micromechanical device according to an embodiment of the present invention.
まず、図２Ａに示すように、可動領域１２１で向かい合う基板１０１の面１０１ａに、平坦な上面１０４ａを備える第１凸部１０４を形成する（第１工程）。上面１０４ａは、組み立てた状態で、可動部１０３の面１０３ａに向かい合う状態に形成する。例えば、公知のリソグラフィー技術およびエッチング技術により、基板１０１の面１０１ａをパターニングすることで、第１凸部１０４を形成すれば良い。μｍオーダのパタンである第１凸部１０４の形成では、リソグラフィー工程において、縮小投影露光装置や電子線描画装置などの高額な装置・システムを必要とせず、等倍露光装置を用いればよく、コストの上昇を招かない。 First, as shown in FIG. 2A, the first convex portion 104 having the flat upper surface 104a is formed on the surface 101a of the substrate 101 facing in the movable region 121 (first step). The upper surface 104a is formed so as to face the surface 103a of the movable portion 103 in an assembled state. For example, the first protrusion 104 may be formed by patterning the surface 101a of the substrate 101 by a known lithography technique and etching technique. The formation of the first convex portion 104 having a pattern on the order of μm does not require an expensive apparatus / system such as a reduction projection exposure apparatus or an electron beam drawing apparatus in the lithography process, and an equal magnification exposure apparatus may be used. Does not lead to a rise.
次に、図２Ｂに示すように、第１凸部１０４の上面１０４ａを含む面１０１ａの全域に、基板１０１および可動部１０３を構成する材料の成分を含む第１材料膜２０１を形成する。例えば、第１材料膜２０１は、非晶質のアルミナ（α相以外の結晶相を持つ酸化アルミニウム）から構成する。例えば、第１材料膜２０１は、原子層堆積法、スパッタ法、化学的気相成長法のいずれかにより形成すればよい。また、第１材料膜２０１は、アルミニウムイオンを含有するゾルを用いたゾルゲル法により形成してもよい。また、第１材料膜２０１は、アルミニウム原子を含有する金属アルコキシド、金属錯体、金属有機酸塩のいずれかから構成された塗布膜を焼成することで形成してもよい。 Next, as illustrated in FIG. 2B, a first material film 201 including a component of the material constituting the substrate 101 and the movable portion 103 is formed over the entire surface 101 a including the upper surface 104 a of the first convex portion 104. For example, the first material film 201 is made of amorphous alumina (aluminum oxide having a crystal phase other than the α phase). For example, the first material film 201 may be formed by any one of atomic layer deposition, sputtering, and chemical vapor deposition. The first material film 201 may be formed by a sol-gel method using a sol containing aluminum ions. The first material film 201 may be formed by baking a coating film made of any of metal alkoxides containing aluminum atoms, metal complexes, and metal organic acid salts.
次いで、公知のリソグラフィー技術およびエッチング技術により第１材料膜２０１をパターニングし、図２Ｃに示すように、第１凸部１０４の上面１０４ａのみに第１材料膜２０２が形成された状態とする（第２工程）。このパターニングにおいても、パタンサイズはμｍオーダであり、リソグラフィー工程では、等倍露光装置を用いればよく、コストの上昇を招かない。また、非晶質のアルミナは、結晶状態のアルミナに比較して耐薬品性が低く、酸やアルカリなどを用いた現像処理が可能であり、パターニングが容易である。 Next, the first material film 201 is patterned by a known lithography technique and etching technique, so that the first material film 202 is formed only on the upper surface 104a of the first protrusion 104 as shown in FIG. 2 steps). Also in this patterning, the pattern size is on the order of μm, and in the lithography process, it is sufficient to use a unity exposure apparatus, which does not increase the cost. Amorphous alumina has low chemical resistance compared to crystalline alumina, and can be developed using acid or alkali, and can be easily patterned.
第１材料膜２０２を加熱して焼成することで第１材料膜２０２を凝集および結晶化させ、図２Ｄに示すように、第１凸部１０４の上面１０４ａに複数の第２凸部１０５を形成する（第３工程）。 By heating and firing the first material film 202, the first material film 202 is aggregated and crystallized, and a plurality of second convex portions 105 are formed on the upper surface 104a of the first convex portion 104 as shown in FIG. 2D. (Third step).
次に、可動部１０３となる材料基板２０３を用意し、図２Ｅに示すように、材料基板２０３の表面に基板１０１および可動部１０３を構成する材料の成分を含む第２材料膜２０４を形成する。例えば、第２材料膜２０４は、非晶質のアルミナ（α相以外の結晶相を持つ酸化アルミニウム）から構成する。例えば、第２材料膜２０４は、原子層堆積法、スパッタ法、化学的気相成長法のいずれかにより形成すればよい。また、第２材料膜２０４は、アルミニウムイオンを含有するゾルを用いたゾルゲル法により形成してもよい。また、第２材料膜２０４は、アルミニウム原子を含有する金属アルコキシド、金属錯体、金属有機酸塩のいずれかから構成された塗布膜を焼成することで形成してもよい。 Next, a material substrate 203 to be the movable portion 103 is prepared, and as shown in FIG. 2E, a second material film 204 including components of the materials constituting the substrate 101 and the movable portion 103 is formed on the surface of the material substrate 203. . For example, the second material film 204 is made of amorphous alumina (aluminum oxide having a crystal phase other than the α phase). For example, the second material film 204 may be formed by any one of atomic layer deposition, sputtering, and chemical vapor deposition. The second material film 204 may be formed by a sol-gel method using a sol containing aluminum ions. The second material film 204 may be formed by baking a coating film made of any of metal alkoxides containing aluminum atoms, metal complexes, and metal organic acid salts.
次に、公知のリソグラフィー技術およびエッチング技術により第２材料膜２０４をパターニングし、図２Ｆに示すように、所定の領域に第２材料膜２０５が形成された状態とする（第４工程）。第２材料膜２０５は、組み立てた状態で、第１凸部１０４に向かい合う領域１２２に形成する。このパターニングにおいても、パタンサイズはμｍオーダであり、リソグラフィー工程では、等倍露光装置を用いればよく、コストの上昇を招かない。また、非晶質のアルミナは、結晶状態のアルミナに比較して耐薬品性が低く、酸やアルカリなどを用いた現像処理が可能であり、パターニングが容易である。 Next, the second material film 204 is patterned by a known lithography technique and etching technique, so that the second material film 205 is formed in a predetermined region as shown in FIG. 2F (fourth step). The second material film 205 is formed in the region 122 facing the first convex portion 104 in an assembled state. Also in this patterning, the pattern size is on the order of μm, and in the lithography process, it is sufficient to use a unity exposure apparatus, which does not increase the cost. Amorphous alumina has low chemical resistance compared to crystalline alumina, and can be developed using acid or alkali, and can be easily patterned.
次に、第２材料膜２０５を加熱して焼成することで第２材料膜２０５を凝集および結晶化させ、図２Ｇに示すように、領域１２２に第２凸部１０５と同じ大きさの複数の第３凸部１０６を形成する（第５工程）。次に、材料基板２０３を薄層化し、図２Ｈに示すように、可動部１０３の面１０３ａの第１凸部１０４に向かい合う領域１２２に、複数の第３凸部１０６が形成された状態とする。薄層化は、例えば、圧力センサの場合、計測する圧力に対応して適当な量の撓みを生じるように適宜に実施すれば良い。この後、所定の電極を形成し、可動部１０３と基板１０１とを貼り合わせることで、実施の形態における微細機械装置が完成する。 Next, the second material film 205 is heated and baked to aggregate and crystallize the second material film 205, and as shown in FIG. 2G, a plurality of regions 122 having the same size as the second protrusion 105 are formed in the region 122. The 3rd convex part 106 is formed (5th process). Next, the material substrate 203 is thinned, and a plurality of third convex portions 106 are formed in a region 122 facing the first convex portion 104 of the surface 103a of the movable portion 103 as shown in FIG. 2H. . For example, in the case of a pressure sensor, thinning may be performed as appropriate so as to cause an appropriate amount of bending corresponding to the pressure to be measured. Thereafter, a predetermined electrode is formed, and the movable portion 103 and the substrate 101 are bonded together, whereby the micro mechanical device according to the embodiment is completed.
ここで、原子層堆積法により形成した非晶質のアルミナの膜、およびこの非晶質アルミナの膜を焼成して結晶化した状態の両者を、原子間力顕微鏡（ＡＦＭ）により観察した結果を図３Ａ，図３Ｂに示す。図３Ａに示すように、非晶質のアルミナ膜は表面が平坦に形成されている。これに対し、図３Ｂに示すように、焼成した後は、微細な結晶が成長して凹凸が形成されている。面荒さ（Ｒｚ）は、０．９ｎｍから、１０倍の９．２ｎｍとなった。 Here, the results of observing both the amorphous alumina film formed by the atomic layer deposition method and the amorphous alumina film fired and crystallized using an atomic force microscope (AFM). 3A and 3B. As shown in FIG. 3A, the amorphous alumina film has a flat surface. On the other hand, as shown in FIG. 3B, after firing, fine crystals grow to form irregularities. The surface roughness (Rz) was changed from 0.9 nm to 10 times 9.2 nm.
また、有機金属化合物の溶液を塗布して焼成して作製した非晶質のアルミナ膜が結晶化した状態を、透過電子顕微鏡で観察した結果を図３Ｃに示す。図３Ｃは、結晶化した状態の断面を、透過電子顕微鏡で観察した結果を示す写真である。図３Ｃに示すように、約２０ｎｍの凹凸が形成されている。 In addition, FIG. 3C shows a result of observing a crystallized state of an amorphous alumina film formed by applying and baking an organometallic compound solution with a transmission electron microscope. FIG. 3C is a photograph showing a result of observing a crystallized cross section with a transmission electron microscope. As shown in FIG. 3C, unevenness of about 20 nm is formed.
なお、上述では、第１凸部１０４を基板１０１の側に形成したが、これに限るものではなく、可動部１０３の側に形成しても良い。第１凸部１０４は、可動領域１２１で向かい合う基板１０１および可動部１０３の一方の面に形成されていれば良い。また、第１凸部１０４は、基板１０１または可動部１０３の他方の面に向かい合う平坦な上面１０４ａを備え、この上面１０４ａに複数の第２凸部１０５が形成されていれば良い。また、第３凸部は、基板１０１または可動部１０３の他方の面の第１凸部１０４に向かい合う領域に形成されていれば良い。 In the above description, the first convex portion 104 is formed on the substrate 101 side. However, the present invention is not limited to this, and may be formed on the movable portion 103 side. The first convex portion 104 only needs to be formed on one surface of the substrate 101 and the movable portion 103 facing each other in the movable region 121. Moreover, the 1st convex part 104 is provided with the flat upper surface 104a which faces the other surface of the board | substrate 101 or the movable part 103, and the several 2nd convex part 105 should just be formed in this upper surface 104a. Moreover, the 3rd convex part should just be formed in the area | region facing the 1st convex part 104 of the other surface of the board | substrate 101 or the movable part 103. FIG.
以上に説明したように、微細機械装置を構成する基板および可動部を構成する材料の成分を含む材料膜を加熱して焼成することで、材料膜を凝集および結晶化させて微小な突起部を形成するようにしたので、微小な突起の形成が容易であり、様々な環境で用いられる微細機械装置におけるスティッキングが、より容易に防止できるようなる。 As described above, by heating and baking the material film containing the components of the material constituting the substrate and the movable part constituting the micromechanical device, the material film is aggregated and crystallized to form minute protrusions. Since it is formed, it is easy to form a minute protrusion, and sticking in a micro mechanical device used in various environments can be more easily prevented.
例えば、微細なダイアフラムを用いた静電容量式の隔膜真空計は、製造装置に実装され、更に、この製造装置が生産現場に設置されて稼働状態となる。製造装置に実装される段階、装置のメンテナンス中などは、上記真空計が大気に曝されることになり、真空計の使用から見れば、異常な高圧下に配置されることになり、スティッキングが発生しやすい状態となる。例えば、メンテナンス中にスティッキングが発生し、これが復帰しなければ、真空計により正常な測定が実施できず、製造プロセスに悪影響が生じる。これに対し、本発明によれば、スティッキングが発生しにくくなり、また、スティッキングから復帰しやすい状態となるので、上述したような問題発生が抑制できるようになる。 For example, a capacitance diaphragm gauge using a fine diaphragm is mounted on a manufacturing apparatus, and the manufacturing apparatus is installed at a production site to be in an operating state. The vacuum gauge is exposed to the atmosphere during the stage where it is mounted on the manufacturing equipment and during maintenance of the equipment. From the viewpoint of using the vacuum gauge, it will be placed under abnormally high pressure, and sticking will not occur. Prone to occur. For example, if sticking occurs during maintenance and this does not return, normal measurement cannot be performed with a vacuum gauge, which adversely affects the manufacturing process. On the other hand, according to the present invention, it becomes difficult for sticking to occur, and it becomes easy to return from sticking, so that the above-described problems can be suppressed.
なお、本発明は以上に説明した実施の形態に限定されるものではなく、本発明の技術的思想内で、当分野において通常の知識を有する者により、多くの変形および組み合わせが実施可能であることは明白である。 The present invention is not limited to the embodiment described above, and many modifications and combinations can be implemented by those having ordinary knowledge in the art within the technical idea of the present invention. It is obvious.
１０１…基板、１０１ａ…面、１０２…支持部、１０３…可動部、１０３ａ…面、１０４…第１凸部、１０４ａ…上面、１０５…第２凸部、１０６…第３凸部、１２１…可動領域、１２２…領域。 DESCRIPTION OF SYMBOLS 101 ... Board | substrate, 101a ... Surface, 102 ... Support part, 103 ... Movable part, 103a ... Surface, 104 ... 1st convex part, 104a ... Upper surface, 105 ... 2nd convex part, 106 ... 3rd convex part, 121 ... Movable Area, 122 ... area.
Claims (5)
前記可動領域で向かい合う前記基板および前記可動部の一方の面に、前記基板または前記可動部の他方の面に向かい合う平坦な上面を備える第１凸部を形成する第１工程と、
前記第１凸部の前記上面に前記基板および前記可動部を構成する材料の成分を含む第１材料膜を形成する第２工程と、
前記第１材料膜を加熱して焼成することで前記第１材料膜を凝集および結晶化させて前記第１凸部の前記上面に複数の第２凸部を形成する第３工程と、
前記基板または前記可動部の他方の面の前記第１凸部に向かい合う領域に、前記基板および前記可動部を構成する材料の成分を含む第２材料膜を形成する第４工程と、
前記第２材料膜を加熱して焼成することで前記第２材料膜を凝集および結晶化させて前記領域に前記第２凸部と同じ大きさの複数の第３凸部を形成する第５工程と
を備え、
前記基板および前記可動部を構成する材料は、サファイアであり、
前記第１材料膜および前記第２材料膜は、非晶質のアルミナから構成することを特徴とする微細機械装置の製造方法。 A method of manufacturing a micromechanical device comprising a movable part supported on a substrate by a support part and spaced apart from the substrate in a movable area, and movable in the direction of the substrate in the movable area,
Forming a first convex portion having a flat upper surface facing the other surface of the substrate or the movable portion on one surface of the substrate and the movable portion facing each other in the movable region;
A second step of forming a first material film including a component of a material constituting the substrate and the movable portion on the upper surface of the first convex portion;
A third step of forming a plurality of second protrusions on the upper surface of the first protrusion by aggregating and crystallizing the first material film by heating and baking the first material film;
A fourth step of forming a second material film containing a component of a material constituting the substrate and the movable portion in a region facing the first convex portion of the other surface of the substrate or the movable portion;
A fifth step of forming a plurality of third protrusions having the same size as the second protrusions in the region by aggregating and crystallizing the second material film by heating and baking the second material film. And
The material constituting the substrate and the movable part is sapphire,
The method of manufacturing a micro mechanical device, wherein the first material film and the second material film are made of amorphous alumina.
前記第１材料膜および前記第２材料膜は、原子層堆積法、スパッタ法、化学的気相成長法のいずれかにより形成する
ことを特徴とする微細機械装置の製造方法。 In the manufacturing method of the micro mechanical device according to claim 1,
The first material film and the second material film are formed by any one of an atomic layer deposition method, a sputtering method, and a chemical vapor deposition method.
前記第１材料膜および前記第２材料膜は、ゾルゲル法により形成する
ことを特徴とする微細機械装置の製造方法。 In the manufacturing method of the micro mechanical device according to claim 1,
The first material film and the second material film are formed by a sol-gel method.
前記第１材料膜および前記第２材料膜は、金属アルコキシド、金属錯体、金属有機酸塩のいずれかから構成された塗布膜を焼成することで形成する
ことを特徴とする微細機械装置の製造方法。 In the manufacturing method of the micro mechanical device according to claim 1,
The first material film and the second material film are formed by firing a coating film composed of any one of a metal alkoxide, a metal complex, and a metal organic acid salt. .
前記可動領域で向かい合う前記基板および前記可動部の一方の面に形成され、前記基板または前記可動部の他方の面に向かい合う平坦な上面を備える第１凸部と、
前記第１凸部の前記上面に形成された複数の第２凸部と、
前記基板または前記可動部の他方の面の前記第１凸部に向かい合う領域に形成された前記第２凸部と同じ大きさの複数の第３凸部と
を備え、
前記第２凸部および前記第３凸部は、前記基板および前記可動部を構成する材料の成分を含む材料膜を加熱して焼成することで前記材料膜を凝集および結晶化させて形成されたものであり、
前記基板および前記可動部を構成する材料は、サファイアであり、
前記材料膜は、非晶質のアルミナから構成されている
ことを特徴とする微細機械装置。 A movable portion supported on a substrate by a support portion and disposed apart from the substrate in a movable region, and movable in the direction of the substrate in the movable region;
A first convex portion provided on one surface of the substrate and the movable portion facing each other in the movable region, and having a flat upper surface facing the other surface of the substrate or the movable portion;
A plurality of second protrusions formed on the upper surface of the first protrusion;
A plurality of third protrusions having the same size as the second protrusions formed in a region facing the first protrusions on the other surface of the substrate or the movable part,
The second convex portion and the third convex portion are formed by aggregating and crystallizing the material film by heating and baking a material film containing a component of the material constituting the substrate and the movable part. Is,
The material constituting the substrate and the movable part is sapphire,
Before SL materials film, micromechanical apparatus characterized by being composed of amorphous alumina.
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