JP6513237B2 - Target supply device - Google Patents

Description

The present invention relates to a target supply equipment.

  In recent years, with the miniaturization of semiconductor processes, miniaturization of transfer patterns in photolithography of semiconductor processes has rapidly progressed. In the next generation, microfabrication of 70 nm to 45 nm, and microfabrication of 32 nm or less will be required. For this reason, for example, development of an exposure apparatus combining an apparatus for generating extreme ultraviolet (EUV) light with a wavelength of about 13 nm and a reduction projection reflection optical system is expected to meet the demand for microfabrication of 32 nm or less .

  As an EUV light generation apparatus, an LPP (Laser Produced Plasma) type apparatus in which a plasma generated by irradiating a target material with laser light is used, and a DPP (Discharge Produced Plasma) in which a plasma generated by discharge is used Three types of devices have been proposed: a device of the formula and a device of the SR (Synchrotron Radiation) type in which orbital radiation is used.

Unexamined-Japanese-Patent No. 2010-166041 US Patent Application Publication 2012/0292527 US Patent Application Publication No. 2010/0258747

Overview

  A target supply device according to an aspect of the present disclosure includes a tank having a tubular main body, an end that closes one end of the main body in the axial direction, and a other end that closes the other end in the axial direction. A nozzle provided at one end of the tank for outputting the target substance contained in the tank, and an inert gas supply unit for supplying an inert gas to the inside of the tank; A gas flow path may be provided which penetrates the other end and guides the inert gas in the direction toward the inner wall surface of the main body.

  A target supply device according to an aspect of the present disclosure includes a tank having a tubular main body, an end that closes one end of the main body in the axial direction, and a other end that closes the other end in the axial direction. A nozzle provided at one end of the tank for outputting the target substance contained in the tank, and an inert gas supply unit for supplying an inert gas to the inside of the tank; The gas flow path includes a gas flow path penetrating the other end, and the gas flow path is formed in a shape thinner than the first flow path provided on the outer side of the tank at the other end and the first flow path And a plurality of second flow paths provided on the inner side of the tank.

  A target supply device according to an aspect of the present disclosure includes a tank having a tubular main body, an end that closes one end of the main body in the axial direction, and a other end that closes the other end in the axial direction. A nozzle provided at one end of the tank for outputting the target substance contained in the tank, and an inert gas supply unit for supplying an inert gas to the inside of the tank; A shielding member configured to be able to shield the opening surface of the gas flow path from the liquid surface of the target material accommodated in the tank at a position away from the gas flow path penetrating the other end and the other end inside the tank And a support configured to support the shielding member.

  A target supply device according to an aspect of the present disclosure includes a tank having a tubular main body, an end that closes one end of the main body in the axial direction, and a other end that closes the other end in the axial direction. A nozzle provided at one end of the tank for outputting the target substance contained in the tank, and an inert gas supply unit for supplying an inert gas to the inside of the tank; You may provide the gas flow path which penetrates the other end part, and the filter arrange | positioned so that at least one part of a gas flow path may be block | closed.

  According to an aspect of the present disclosure, an EUV light generation apparatus includes a tubular main body, an end portion closing an axial end of the main portion, and a tank having an opposite end closing the other axial end. And a nozzle provided at one end of the tank for outputting the target material contained in the tank, an inert gas supply unit for supplying an inert gas to the inside of the tank, a target material output from the laser beam and the nozzle The inert gas supply unit includes a gas flow path that penetrates the other end of the tank and guides the inert gas toward the inner wall surface of the main unit, and the tank includes Fixed in the chamber so that the axial direction of the main body tilts with respect to the gravity direction, and that the inert gas that collides with the inner wall surface and the traveling direction is changed collides diagonally with the liquid surface of the target material. May be

Several embodiments of the present disclosure are described below, by way of example only, with reference to the accompanying drawings.
FIG. 1 schematically shows the configuration of an exemplary EUV light generation apparatus. FIG. 2 schematically shows the configuration of an EUV light generation apparatus including the target supply apparatus according to the first embodiment. FIG. 3 schematically illustrates the configuration of the target supply device according to the first embodiment. FIG. 4 schematically shows that the target material is scattered in the direction opposite to the direction of gravity by the inert gas supplied to the target generator. FIG. 5 schematically illustrates the configuration of a target supply device according to a second embodiment. FIG. 6 schematically illustrates the configuration of a target supply device according to a third embodiment. FIG. 7 schematically illustrates the configuration of a target supply device according to a fourth embodiment. FIG. 8 schematically illustrates the configuration of the EUV light generation system according to the fifth embodiment.

Contents 1. Overview 2. Overall Description of EUV Light Generation Device 2.1 Configuration 2.2 Operation 3. EUV Light Generation Device Including Target Supply Device 3.1 Explanation of Terms 3.2 First Embodiment 3.2.1 Configuration 3.2.2 Operation 3.3 Second Embodiment 3.3.1 Configuration 3.3 .2 Operation 3.4 Third Embodiment 3.4.1 Configuration 3.4.2 Operation 3.5 Fourth Embodiment 3.5.1 Configuration 3.5.2 Operation 3.6 Fifth Embodiment 6.1 Configuration 3.6.2 Operation 3.7 Modifications Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below illustrate some examples of the present disclosure and do not limit the content of the present disclosure. Further, all the configurations and operations described in each embodiment are not necessarily essential as the configurations and operations of the present disclosure. Further, in the embodiment described using drawings other than FIG. 1, among the components shown in FIG. 1, the components that are not essential to the description of the present disclosure may be omitted. In addition, the same reference numerals are given to the same components, and the overlapping description is omitted.

1. SUMMARY In an embodiment of the present disclosure, a target supply device includes a cylindrical main body, one end closing an axial end of the main body, and the other end closing an axial other end. And an inert gas supply unit for supplying an inert gas to the inside of the tank, the inert gas supply unit comprising: A gas flow path may be provided which penetrates the other end of the tank and guides the inert gas in the direction toward the inner wall surface of the main body.

  In the embodiment of the present disclosure, the target supply device has a cylindrically formed main body, one end closing the axial end of the main body, and the other end closing the other axial end. The inert gas supply unit includes a tank, a nozzle provided at one end of the tank and outputting a target substance contained in the tank, and an inert gas supply unit for supplying an inert gas to the inside of the tank. A gas flow path is provided which penetrates the other end of the tank, and the gas flow path is formed in a shape thinner than the first flow path provided on the outer side of the tank at the other end and the first flow path And a plurality of second flow paths provided on the inner side of the tank in the unit.

  In the embodiment of the present disclosure, the target supply device has a cylindrically formed main body, one end closing the axial end of the main body, and the other end closing the other axial end. The inert gas supply unit includes a tank, a nozzle provided at one end of the tank and outputting a target substance contained in the tank, and an inert gas supply unit for supplying an inert gas to the inside of the tank. The gas flow path passing through the other end of the tank and the position away from the other end inside the tank are configured to be able to shield the opening surface of the gas flow path from the liquid surface of the target material contained in the tank. A shielding member and a support configured to support the shielding member may be provided.

  In the embodiment of the present disclosure, the target supply device has a cylindrically formed main body, one end closing the axial end of the main body, and the other end closing the other axial end. The inert gas supply unit includes a tank, a nozzle provided at one end of the tank and outputting a target substance contained in the tank, and an inert gas supply unit for supplying an inert gas to the inside of the tank. The fuel cell system may further include a gas flow passage penetrating the other end of the tank, and a filter disposed to block at least a part of the gas flow passage.

  In the embodiment of the present disclosure, the EUV light generation apparatus includes a tubular main body, one end closing an axial end of the main body, and the other end closing an axial other end. A tank having a nozzle, a nozzle provided at one end of the tank for outputting the target substance contained in the tank, an inert gas supply unit for supplying an inert gas to the inside of the tank, the laser light and the nozzle The inert gas supply unit includes a gas flow path that penetrates the other end of the tank and guides the inert gas toward the inner wall surface of the main unit. In the chamber, the axial direction of the main body portion is inclined with respect to the gravity direction, and the inert gas collides with the inner wall surface and the traveling direction is changed so as to obliquely collide with the liquid surface of the target material. It may be fixed.

2. Overall Description of EUV Light Generation Device 2.1 Configuration FIG. 1 schematically shows the configuration of an exemplary LPP-type EUV light generation system. The EUV light generation device 1 may be used with at least one laser device 3. In the present application, a system including the EUV light generation apparatus 1 and the laser apparatus 3 is referred to as an EUV light generation system 11. As shown in FIG. 1 and described in detail below, the EUV light generation system 1 may include a chamber 2 and a target supply system 7. Chamber 2 may be sealable. The target supply device 7 may be mounted, for example, to penetrate the wall of the chamber 2. The material of the target material supplied from the target supply device may include, but is not limited to, tin, terbium, gadolinium, lithium, xenon, or a combination of any two or more thereof.

  The wall of the chamber 2 may be provided with at least one through hole. A window 21 may be provided in the through hole, and the pulse laser beam 32 output from the laser device 3 may be transmitted through the window 21. Inside the chamber 2, for example, an EUV collector mirror 23 having a spheroidal reflecting surface may be disposed. The EUV collector mirror 23 may have first and second focal points. For example, a multilayer reflective film in which molybdenum and silicon are alternately stacked may be formed on the surface of the EUV collector mirror 23. The EUV collector mirror 23 is preferably arranged, for example, such that its first focal point is located at the plasma generation region 25 and its second focal point is located at the intermediate focusing point (IF) 292. A through hole 24 may be provided in the central portion of the EUV collector mirror 23, and the pulse laser beam 33 may pass through the through hole 24.

  The EUV light generation apparatus 1 may include an EUV light generation controller 5, a target sensor 4 and the like. The target sensor 4 may have an imaging function, and may be configured to detect the presence, trajectory, position, velocity, and the like of the droplet 27 as a target.

  In addition, the EUV light generation apparatus 1 may include a connection part 29 that brings the inside of the chamber 2 into communication with the inside of the exposure apparatus 6. Inside the connection portion 29, a wall 291 having an aperture 293 may be provided. The wall 291 may be arranged such that its aperture 293 is located at the second focus position of the EUV collector mirror 23.

  Furthermore, the EUV light generation apparatus 1 may include a laser light traveling direction control unit 34, a laser light collecting mirror 22, a target collecting unit 28 for collecting the droplets 27, and the like. The laser light traveling direction control unit 34 may include an optical element for defining the traveling direction of the laser light, and an actuator for adjusting the position, attitude, and the like of the optical element.

2.2 Operation Referring to FIG. 1, the pulsed laser beam 31 output from the laser device 3 passes through the laser beam traveling direction control unit 34, passes through the window 21 as the pulsed laser beam 32, and enters the chamber 2 May be The pulsed laser beam 32 may travel along the at least one laser beam path in the chamber 2, be reflected by the laser beam focusing mirror 22, and be emitted to the at least one droplet 27 as the pulsed laser beam 33.

  The target supply device 7 may be configured to output the droplets 27 toward the plasma generation region 25 inside the chamber 2. The droplet 27 may be irradiated with at least one pulse included in the pulsed laser light 33. The droplets 27 irradiated with the pulsed laser light may be plasmatized, and radiation 251 may be emitted from the plasma. The EUV light 252 included in the radiation 251 may be selectively reflected by the EUV collector mirror 23. The EUV light 252 reflected by the EUV collector mirror 23 may be collected at an intermediate collection point 292 and output to the exposure apparatus 6. A plurality of pulses included in the pulse laser beam 33 may be irradiated to one droplet 27.

  The EUV light generation controller 5 may be configured to control the entire EUV light generation system 11. The EUV light generation controller 5 may be configured to process image data or the like of the droplet 27 captured by the target sensor 4. Further, the EUV light generation controller 5 may be configured to control, for example, the timing at which the droplet 27 is output, the output direction of the droplet 27 and the like. Furthermore, the EUV light generation controller 5 may be configured to control, for example, the oscillation timing of the laser device 3, the traveling direction of the pulse laser beam 32, the focusing position of the pulse laser beam 33, and the like. The various controls described above are merely exemplary, and other controls may be added as needed.

3. EUV Light Generation Device Including Target Supply Device 3.1 Explanation of Terms In the following description using drawings other than FIG. 1, terms related to directions may be described based on the XYZ axes shown in the respective drawings.

  Note that this expression does not represent the relationship with the gravity direction 10B.

3.2 First Embodiment 3.2.1 Configuration FIG. 2 schematically illustrates the configuration of an EUV light generation apparatus including a target supply device according to the first embodiment and second to fifth embodiments described later. FIG. 3 schematically illustrates the configuration of the target supply device according to the first embodiment.

  The EUV light generation system 1A may include a chamber 2 and a target supply system 7A as shown in FIG. The target supply device 7A may include a target generation unit 70A and a target control device 80A. The laser device 3 and the EUV light generation control system 5A may be electrically connected to the target control device 80A.

  As shown in FIGS. 2 and 3, even if the target generator 70A includes a target generator 71A, an inert gas supply unit 73A, a pressure regulator 76A, a temperature controller 78A, and a piezo unit 79A. Good.

  The target generator 71A may be made of, for example, a material having low reactivity with the target material 270, such as molybdenum. The target generator 71A may include a tank 711A for containing the target material 270 therein. The tank 711A may include a main body 712A, a bottom 713A as one end, and a lid 714A as the other end.

  The main body 712A may be cylindrical.

  The bottom surface portion 713A may be configured to close an end portion on the + Z direction side as one end in the axial direction of the main body portion 712A. The bottom surface portion 713A may be integrally formed with the main body portion 712A.

  The lid 714A may be configured to close an end on the −Z direction side as the other axial end of the main body 712A. The lid 714A may be configured separately from the main body 712A. The lid 714A may be fixed to the main body 712A by a bolt not shown. At this time, the O-ring 715A may be fitted into a groove provided on the + Z direction side of the lid 714A to seal between the main body 712A and the lid 714A.

  The hollow portion of the tank 711A may be the accommodation space 716A. The accommodation space 716A may be a space surrounded by the inner wall surface 717A of the main body portion 712A, the surface on the −Z direction side of the bottom surface portion 713A, and the surface on the + Z direction side of the lid portion 714A.

  The tank 711A may be provided with a nozzle 718A for outputting the target material 270 in the accommodation space 716A into the chamber 2 as the droplet 27. The target generator 71A may be provided such that the tank 711A is located outside the chamber 2 and the nozzle 718A is located inside the chamber 2.

  The nozzle 719A may be provided with a nozzle hole 719A. The nozzle hole 719A may open substantially at the center of the + Z direction end of the nozzle 718A. The diameter of the nozzle holes 719A may be 3 μm to 15 μm. The nozzle 718A may be made of a material having low wettability with the target material 270. Specifically, the material having low wettability with the target substance 270 may be a material whose contact angle with the target substance 270 exceeds 90 °. The material having a contact angle of 90 ° or more may be any of SiC, SiO 2, Al 2 O 3, molybdenum, tungsten, and tantalum.

  Depending on the installation mode of the chamber 2, the output direction of the droplet 27 set in advance does not necessarily coincide with the gravity direction 10B. The output direction of the droplet 27 set in advance may be the central axis direction of the nozzle hole 719A, and is hereinafter referred to as a set output direction 10A. The droplet 27 may be configured to be output obliquely or horizontally with respect to the gravity direction 10B. In the first embodiment, the chamber 2 may be installed such that the set output direction 10A coincides with the gravity direction 10B.

  The inert gas supply unit 73A may supply an inert gas to the storage space 716A of the tank 711A. The inert gas supply unit 73A may include a gas flow path 731A. The gas flow path 731A may be configured by a hole that penetrates the lid 714A of the tank 711A.

  The gas flow path 731A may include a first flow path 732A and a second flow path 733A.

  The first flow path 732A may be provided on the outside of the tank 711A in the lid 714A. The first flow path 732A may be formed to extend in a direction substantially parallel to the gravity direction 10B. The diameter of the first flow path 732A may be 3 mm to 16 mm.

  The second flow path 733A may be formed to have a thickness substantially equal to that of the first flow path 732A. The second flow path 733A may be provided on the inner side of the tank 711A in the lid 714A. The end on the −Z direction side of the second flow path 733A may be connected to the end on the + Z direction side of the first flow path 732A. The second flow path 733A may be formed to extend in a direction inclined to the + X direction side with respect to the gravity direction 10B. For example, the angle between the axis of the second flow path 733A and the axis of the first flow path 732A may be 30 ° to 60 °. Thereby, the gas flow path 731A can guide the inert gas in the direction toward the inner wall surface 717A of the tank 711A.

  A pipe 764A may be provided on the lid 714A of the tank 711A. A flange 765A may be provided at one axial end of the pipe 764A. In the pipe 764A, the flange 765A may be fixed to the surface on the −Z direction side of the lid 714A by a bolt not shown. At this time, the O-ring 766A may be fitted in a groove provided on the surface on the + Z direction side of the flange 765A to seal between the flange 765A and the lid 714A. The pipe 764A may be provided such that the axial direction of the pipe 764A is substantially parallel to the gravity direction 10B. The pipe 764A may be provided such that the internal space of the pipe 764A communicates with the gas flow path 731A.

  One end of the pipe 768A may be connected to an end of the pipe 764A on the -Z direction side via a joint 767A. The other end of the pipe 768A may be connected to the inert gas cylinder 761A via the pressure regulator 76A. With such a configuration, the inert gas in the inert gas cylinder 761A can be supplied to the target generator 71A.

  The pipe 768A may be provided with a pressure regulator 76A. The pressure regulator 76A may include a first valve V1, a second valve V2, a pressure control unit 762A, and a pressure sensor 763A.

  The first valve V1 may be provided in the pipe 768A.

  A pipe 769A may be connected to the tank 711A side from the first valve V1 in the pipe 768A. The pipe 769A may have its first end connected to the side of the pipe 768A. The pipe 769A may be open at the second end.

  The second valve V2 may be provided in the middle of the pipe 769A.

  The first valve V1 and the second valve V2 may be any of a gate valve, a ball valve, a butterfly valve, and the like. The first valve V1 and the second valve V2 may be the same type of valve or may be different types of valves.

  A pressure control unit 762A may be electrically connected to the first valve V1 and the second valve V2. The target control device 80A may transmit a signal related to the first valve V1 and the second valve V2 to the pressure control unit 762A. The first valve V1 and the second valve V2 may be independently switched between open and closed based on a signal transmitted from the pressure control unit 762A.

  The pipes 764A, 768A, 769A, 770A and the joint 767A may be made of, for example, stainless steel.

  When the first valve V1 is opened, the inert gas in the inert gas cylinder 761A can be supplied into the target generator 71A via the pipes 768A, 764A and the gas flow path 731A. When the second valve V2 is closed, the inert gas present in the pipes 768A and 764A, the gas flow path 731A and the target generator 71A is discharged from the second end of the pipe 769A to the outside of the pipe 769A. Can prevent that. As a result, when the first valve V1 is opened and the second valve V2 is closed, the pressure in the target generator 71A can rise to the pressure in the inert gas cylinder 761A. Thereafter, the pressure in the target generator 71A can be maintained at the pressure in the inert gas cylinder 761A.

  When the first valve V1 is closed, the inert gas in the inert gas cylinder 761A can be prevented from being supplied into the target generator 71A through the pipes 768A, 764A and the gas flow path 731A. When the second valve V2 is opened, the pressure difference between the inside of the pipes 768A and 764A, the gas flow path 731A and the target generator 71A, and the outside of the pipes 768A and 764A, the gas flow path 731A and the target generator 71A The inert gas present in the pipes 768A and 764A, the gas flow path 731A, and the target generator 71A may be discharged from the second end of the pipe 769A to the outside of the pipe 769A. Accordingly, when the first valve V1 is closed and the second valve V2 is opened, the pressure in the target generator 71A can be decreased.

  A pipe 770A may be connected to the tank 711A side of the pipe 769A in the pipe 768A. The pipe 770A may have a first end connected to the side of the pipe 768A. A pressure sensor 763A may be provided at the second end of the pipe 770A. A pressure control unit 762A may be electrically connected to the pressure sensor 763A. The pressure sensor 763A may detect the pressure of the inert gas present in the pipe 770A, and may transmit a signal corresponding to the detected pressure to the pressure control unit 762A. The pressure in the pipe 770A may be substantially the same as the pressure in the pipe 768A, the pipe 764A, the gas flow path 731A, and the target generator 71A.

  The temperature control unit 78A may be configured to control the temperature of the target material 270 in the tank 711A. The temperature control unit 78A may include a heater 781A, a heater power supply 782A, a temperature sensor 783A, and a temperature controller 784A. The heater 781A may be provided on the outer peripheral surface of the tank 711A. The heater power supply 782A may supply power to the heater 781A to cause the heater 781A to generate heat based on a signal from the temperature controller 784A. Thereby, the target material 270 in the tank 711A can be heated via the tank 711A.

  The temperature sensor 783A may be provided on the outer peripheral surface of the tank 711A on the side of the nozzle 718A, or may be provided in the tank 711A. The temperature sensor 783A may be configured to mainly detect the temperature of the installation position of the temperature sensor 783A and the vicinity thereof in the tank 711A, and transmit a signal corresponding to the detected temperature to the temperature controller 784A. The temperature of the position where the temperature sensor 783A is installed and the position near it may be substantially the same as the temperature of the target material 270 in the tank 711A.

  The temperature controller 784A may be configured to output a signal for controlling the temperature of the target material 270 to a predetermined temperature based on a signal from the temperature sensor 783A to the heater power supply 782A.

  The piezo unit 79A may include a piezo element 791A and a power supply 792A. The piezoelectric element 791A may be provided on the outer peripheral surface of the nozzle 718A in the chamber 2. Instead of the piezo element 791A, a mechanism capable of applying vibration to the nozzle 718A at high speed may be provided. The power supply 792A may be electrically connected to the piezo element 791A via the feedthrough 793A. The power supply 792A may be electrically connected to the target control device 80A.

  The target generation unit 70A may be configured to generate the droplets 27 by generating the jets 27A by a continuous jet method and vibrating the jets 27A output from the nozzles 718A.

3.2.2 Operation FIG. 4 schematically shows the problem that the inert gas supplied to the target generator causes the target material to scatter in the direction opposite to the direction of gravity.

  In addition, below, the case where the target material 270 is tin is illustrated, and operation | movement of 7 A of target supply apparatuses is demonstrated.

  The target supply device has the same configuration as the target supply device 7A of the first embodiment except that an inert gas supply unit 73 is applied instead of the inert gas supply unit 73A, as shown in FIG. It is also good.

  The inert gas supply unit 73 may include a gas flow path 731. The gas flow path 731 may be configured by a hole penetrating the lid 714. The gas flow path 731 may be formed to extend in a direction substantially parallel to the gravity direction 10B. The gas flow passage 731 may be formed to have a thickness substantially equal to that of the first flow passage 732A.

  In such a target supply device, the target control device 80A transmits a signal to the temperature control unit 78A to heat the target material 270 in the target generator 71A to a predetermined temperature above the melting point of the target material 270. It is also good.

  The target control device 80A may transmit a signal of a predetermined frequency to the piezo element 791A. Thereby, the piezo element 791A may vibrate so as to periodically generate the droplets 27 from the jet 27A.

  The target control device 80A may send a signal to the pressure control unit 762A to set the pressure in the target generator 71A to the target pressure Pt. The pressure control unit 762A may open / close control the first valve V1 and the second valve V2 so that the value of the difference ΔP between the pressure P and the target pressure Pt measured by the pressure sensor 763A becomes smaller. Thereby, the inert gas in the inert gas cylinder 761A is supplied into the target generator 71A, and the pressure in the target generator 71A can be stabilized at the target pressure Pt. When the pressure in the target generator 71A reaches the target pressure Pt, the jet 27A is output from the nozzle 718A, and the droplet 27 may be generated according to the vibration of the nozzle 718A.

  When the supply of the inert gas into the target generator 71A starts, the pressure in the target generator 71A may rise sharply from 0.1 Mpa to 20 Mpa.

  At this time, the gas flow path 731 can introduce the inert gas 771 in a direction substantially equal to the gravity direction 10B. The inert gas 771 introduced in a direction substantially equal to the gravity direction 10 B may collide with the liquid surface 271 of the target material 270 substantially perpendicularly. By this collision, the target material 272 can be scattered in the direction substantially opposite to the traveling direction of the inert gas 771 and reach the opening on the + Z direction side of the gas flow path 731. Since the gas flow path 731 is formed to extend in a direction substantially parallel to the gravity direction 10 B, that is, in a direction substantially parallel to the scattering direction of the target material 272, the target material 272 enters the gas flow path 731. It can. The target substance 272 entering the gas flow path 731 may adhere to at least one of the pipes 764A, 768A, 769A, 770A and the joint 767A. Since the pipes 764A, 768A, 769A, 770A and the joint 767A are not heated, the target substance 272 adhering to at least one of them may be cooled and solidified. The solidified target material 272 may interfere with the supply of the inert gas 771.

  Further, at least one of the pipes 764A, 768A, 769A, 770A and the joint 767A may react with the attached target substance 272 to generate an impurity. Since the gas flow path 731 is formed to extend in a direction substantially parallel to the gravity direction 10 B, when the target material 272 containing an impurity falls, the target material 272 containing the impurity passes through the gas flow path 731. Can reach into the target generator 71A. As a result, impurities may block the nozzle holes 719A of the nozzles 718A.

  In order to suppress such a phenomenon, the target generator 71A of the target supply device 7A may be configured as shown in FIG.

  In the target supply device 7A shown in FIG. 3, when the supply of the inert gas into the target generator 71A starts, the gas flow path 731A causes the inert gas 771A to flow in the + X direction with respect to the gravity direction 10B through the second flow path 733A It can be led in the direction inclined to the side. The inert gas 771A introduced by the gas flow path 731A may collide with the inner wall surface 717A of the tank 711A before colliding with the liquid surface 271 of the target material 270. The inert gas 771A that has collided with the inner wall surface 717A can change its traveling direction and reduce the flow velocity, and can collide with the liquid surface 271 as the inert gas 772A. At this time, since the flow velocity of the inert gas 772A is reduced as compared to the flow velocity of the inert gas 771A, the scattering of the target material 272A can be suppressed as compared with the configuration shown in FIG. As a result, the target substance 272A can be prevented from reaching the lid portion 714A and entering the gas flow path 731A.

  In addition, although the target material 272A may reach the lid 714A, the inert gas 772A may obliquely collide with the liquid surface 271. Due to this collision, the target material 272A can scatter in a direction oblique to the liquid surface 271, that is, in a direction inclined to the −X direction side with respect to the −Z direction. As a result, the target substance 272A can be prevented from reaching the opening on the + Z direction side of the gas flow path 731A, and the entry of the target substance 272A into the gas flow path 731A can be suppressed.

  As described above, since the target substance 272A can be suppressed from entering the gas flow path 731A, the target substance 272A can be suppressed from being solidified inside the pipes 764A, 768A, 769A, 770A and the joint 767A. As a result, inhibition of the supply of the inert gas 771A can be suppressed.

  In addition, the target substance 272A may enter the gas flow path 731A and adhere to at least one of the pipes 764A, 768A, 769A, 770A and the joint 767A. At least one of the piping 764A, 768A, 769A, 770A and the joint 767A may react with the target material 272A to generate an impurity. Since the second flow path 733A of the gas flow path 731A is formed to extend in the direction inclined to the + X direction side with respect to the gravity direction 10B, even if the target material 272A containing impurities falls, the second flow It adheres to the path 733A and can be inhibited from reaching the target generator 71A. As a result, impurities can be prevented from blocking the nozzle holes 719A of the nozzles 718A.

3.3 Second Embodiment 3.3.1 Configuration FIG. 5 schematically illustrates the configuration of a target supply device according to a second embodiment.

  The target supply device 7B of the second embodiment may apply the same configuration as the target supply device 7A of the first embodiment, except for the configuration of the inert gas supply unit 73B.

  The inert gas supply unit 73B may include a gas flow path 731B. The gas flow path 731B may be configured by a hole that penetrates the lid 714A of the tank 711A.

  The gas flow path 731B may include one first flow path 732B and a plurality of second flow paths 733B.

  The first flow path 732B may be provided outside the tank 711A. The first flow path 732B may be formed to extend in a direction substantially parallel to the gravity direction 10B. The first flow passage 732B may be formed to have a thickness substantially equal to that of the gas flow passage 731. For example, the diameter of the first flow path 732B may be 3 mm to 16 mm.

  The second flow path 733B may be formed in a thinner shape than the first flow path 732B. For example, the diameter of the second flow path 733B may be 0.3 mm to 2 mm. The diameter of the second flow path 733B may preferably be smaller than the maximum diameter of the target material 272B scattered by the pipe 764A and the inert gas 772B. The second flow path 733B may be provided on the inner side of the tank 711A in the lid 714A. The end on the −Z direction side of the second flow path 733B may be connected to the end on the + Z direction side of the first flow path 732B. The opening surface on the −Z direction side of the plurality of second flow paths 733B may be located in the opening surface on the + Z direction side of the first flow path 732B. The second flow path 733B may be formed to extend in a direction substantially parallel to the gravity direction 10B, that is, in a direction substantially parallel to the first flow path 732B. Thus, the gas flow passage 731B can reduce the flow rate of the inert gas by guiding the inert gas led to the first flow passage 732B to the plurality of second flow passages 733B.

3.3.2 Operation The operation of the target supply device 7B will be described.

  In the following, the description of the same operations as in the first embodiment will be omitted.

  In the target supply device 7B shown in FIG. 5, the temperature control unit 78A may melt the target material 270, and the piezo element 791A may vibrate the nozzle 718A. When the pressure control unit 762A starts supplying the inert gas into the target generator 71A, the gas flow path 731B can guide the inert gas 771B in a direction substantially equal to the gravity direction 10B by the first flow path 732B. The inert gas 771B that has passed through the first flow path 732B is guided to the plurality of second flow paths 733B, and the flow velocity may be reduced to collide with the liquid surface 271 as the inert gas 772B. At this time, since the flow velocity of the inert gas 772B is reduced as compared to the flow velocity of the inert gas 771B, the scattering of the target material 272B can be suppressed as compared with the configuration shown in FIG. As a result, the target substance 272B can be prevented from reaching the lid portion 714A and entering the gas flow path 731B.

  In addition, since the inert gas 772B can collide with the liquid surface 271 substantially perpendicularly, the target substance 272B is scattered in the direction substantially opposite to the traveling direction of the inert gas 772B, and the opening on the + Z direction side of the gas flow path 731B. It is possible to reach However, since the opening of the second flow path 733B is smaller than the opening of the first flow path 732B, entry of the target material 272B into the gas flow path 731B can be suppressed.

  As described above, since the target substance 272B can be suppressed from entering the gas flow path 731B, the target substance 272B can be suppressed from being solidified inside the pipes 764A, 768A, 769A, 770A and the joint 767A. As a result, interruption of the supply of the inert gas 771B can be suppressed.

  The target substance 272B may enter the gas flow path 731B and adhere to at least one of the pipes 764A, 768A, 769A, 770A and the joint 767A. At least one of the piping 764A, 768A, 769A, 770A and the joint 767A may react with the target material 272B to generate an impurity. Since the diameter of the second flow path 733B of the gas flow path 731B is smaller than the maximum width of the impurities, the target material 272B containing the impurities is prevented from passing through the second flow path 733B and reaching the inside of the target generator 71A. It can. As a result, impurities can be prevented from blocking the nozzle holes 719A of the nozzles 718A.

3.4 Third Embodiment 3.4.1 Configuration FIG. 6 schematically illustrates the configuration of a target supply device according to a third embodiment.

  The target supply device 7C of the third embodiment may apply the same configuration as the target supply device 7A of the first embodiment, except for the configuration of the inert gas supply unit 73C.

  The inert gas supply unit 73C may include a gas passage 731C, a shielding member 734C, and a plurality of poles 737C as a support.

  The gas flow path 731C may be configured by a hole that penetrates the lid 714A of the tank 711A. The gas flow path 731C may be formed to extend in a direction substantially parallel to the gravity direction 10B. The gas flow path 731C may be formed to have a thickness substantially equal to that of the gas flow path 731. For example, the diameter of the gas flow path 731C may be 3 mm to 16 mm.

  The shielding member 734C may be formed in a substantially disc shape. The diameter of the shielding member 734C may be larger than the diameter of the gas channel 731C.

  The pole 737C may be fixed so as to extend in the + Z direction from the + Z direction side surface of the lid 714A. The poles 737C may be arranged at substantially equal intervals along the outer periphery of the gas flow path 731C. A shielding member 734C may be fixed to the tip of the pole 737C. The shielding member 734C may be fixed so that the first surface 735C of the shielding member 734C is substantially parallel to the surface on the + Z direction side of the lid 714A. Thereby, the shielding member 734C can shield the opening surface of the gas flow path 731C from the liquid surface 271 at a position away from the lid 714A inside the tank 711A. The shielding member 734C can guide the inert gas 771C that has passed through the gas flow path 731C to the inner wall surface 717A side of the main portion 712A by the first surface 735C.

  Note that the shielding member 734C and the pole 737C may be formed of a material that does not easily react with tin that is the target material 270, for example, a high melting point material such as molybdenum or tungsten. The shielding member 734C and the pole 737C may be formed of ceramic, for example, aluminum oxide, silicon oxide, silicon carbide or the like.

3.4.2 Operation The operation of the target supply device 7C will be described.

  In the following, the description of the same operations as in the first embodiment will be omitted.

  In the target supply device 7C shown in FIG. 6, the temperature control unit 78A may melt the target material 270, and the piezo element 791A may vibrate the nozzle 718A. When the pressure control unit 762A starts supplying the inert gas into the target generator 71A, the gas flow path 731C can introduce the inert gas 771C in a direction substantially equal to the gravity direction 10B. The inert gas 771C that has passed through the gas flow path 731C may collide with the first surface 735C of the shielding member 734C, and the flow velocity may be reduced to radially diffuse as the inert gas 772C. The inert gas 772C may collide with the liquid surface 271 after colliding with the inner wall surface 717A. At this time, since the flow velocity of the inert gas 772C is decelerated compared to the flow velocity of the inert gas 771C, the scattering of the target material can be suppressed as compared with the configuration shown in FIG. As a result, the target substance can be prevented from reaching the lid portion 714A and entering the gas flow path 731C.

  Note that the target material may be scattered in the −Z direction when the inert gas 772 B collides with the liquid surface 271. However, since the shielding member 734C shields the opening surface of the gas flow path 731C, entry of the target material into the gas flow path 731C can be suppressed.

  As described above, since the target substance can be suppressed from entering the gas flow path 731C, the target substance can be suppressed from solidifying in the pipes 764A, 768A, 769A, 770A and the joint 767A. As a result, inhibition of the supply of the inert gas 771C can be suppressed.

  The target substance may enter the gas flow path 731C and adhere to at least one of the pipes 764A, 768A, 769A, 770A and the joint 767A. The target material may react with at least one of the pipes 764A, 768A, 769A, 770A and the joint 767A to generate impurities. Since the shielding member 734C whose diameter is larger than the diameter of the gas flow passage 731C is provided on the + Z direction side of the gas flow passage 731C, the first surface 735C of the shielding member 734C is dropped even if the target material containing impurities falls. Can be inhibited from reaching the target generator 71A. As a result, impurities can be prevented from blocking the nozzle holes 719A of the nozzles 718A.

3.5 Fourth Embodiment 3.5.1 Configuration FIG. 7 schematically illustrates the configuration of a target supply device according to a fourth embodiment.

  The target supply device 7D of the fourth embodiment may apply the same configuration as the target supply device 7A of the first embodiment, except for the configuration of the inert gas supply unit 73D.

  The inert gas supply unit 73D may include a gas flow path 731C, a filter 738D, and a holder 741D.

  Filter 738D may be a porous filter. The filter 738D may be provided with innumerable through pores with an aperture of, for example, about 3 μm to 20 μm. The filter 738D may be formed in a substantially disc shape. The diameter of the filter 738D may be larger than the diameter of the gas passage 731C. The filter 738D may be formed of a material that does not easily react with tin that is the target material 270, such as molybdenum, tungsten, aluminum oxide-silicon dioxide glass, silicon carbide, or the like.

  The holder 741D may be fixed to the + Z direction side surface of the lid 714A. The holder 741D may hold the filter 738D from the + Z direction side. In the holder 741D, the opening surface of the gas flow path 731C is positioned in the first surface 739D of the filter 738D, and the first surface 739D is in close contact with the + Z direction surface of the lid 714A. It may hold 738D. Thus, the filter 738D can close the end of the gas flow path 731C on the inner side of the tank 711A.

  Note that the holder 741D may be formed of a material that does not easily react with tin that is the target material 270, for example, a high melting point material such as molybdenum or tungsten. The holder 741D may be formed of ceramic, for example, aluminum oxide, silicon oxide, silicon carbide or the like.

3.5.2 Operation The operation of the target supply device 7D will be described.

  In the following, the description of the same operations as in the first embodiment will be omitted.

  In the target supply device 7D shown in FIG. 7, the temperature control unit 78A may melt the target material 270, and the piezo element 791A may vibrate the nozzle 718A. When the pressure control unit 762A starts supplying the inert gas into the target generator 71A, the gas flow path 731C can introduce the inert gas 771D in a direction substantially equal to the gravity direction 10B. The inert gas 771D that has passed through the gas flow path 731C enters into the filter 738D, and the flow rate is decelerated to pass through numerous through-pores as the inert gas 772D. The inert gas 772D may travel in a direction substantially equal to the gravity direction 10B and collide with the liquid surface 271. At this time, since the flow velocity of the inert gas 772D is reduced as compared to the flow velocity of the inert gas 771D, the scattering of the target material 272D can be suppressed as compared with the configuration shown in FIG. As a result, the target substance 272D can be prevented from reaching the lid portion 714A and entering the gas flow path 731C.

  Note that when the inert gas 772D collides with the liquid surface 271, the target material 272D may be scattered in the −Z direction. However, since the filter 738D blocks the opening surface of the gas flow path 731C, entry of the target material 272D into the gas flow path 731C can be suppressed.

  As described above, since the target substance 272D can be suppressed from entering the gas flow path 731C, the target substance 272D can be suppressed from being solidified inside the pipes 764A, 768A, 769A, 770A and the joint 767A. As a result, inhibition of the supply of the inert gas 771D can be suppressed.

  A minute target substance 272D may enter the gas flow path 731C and adhere to at least one of the pipes 764A, 768A, 769A, 770A and the joint 767A. The target material may react with at least one of the pipes 764A, 768A, 769A, 770A and the joint 767A to generate impurities. Because the end of the gas flow path 731C on the + Z direction side is blocked by the filter 738D, even if the target material 272D containing impurities falls, it adheres to the filter 738D and reaches the inside of the target generator 71A. Can be suppressed. As a result, impurities can be prevented from blocking the nozzle holes 719A of the nozzles 718A.

3.6 Fifth Embodiment 3.6.1 Configuration FIG. 8 schematically illustrates the configuration of an EUV light generation system according to a fifth embodiment.

  The EUV light generation apparatus 1E according to the fifth embodiment may be the same as the EUV light generation apparatus 1A according to the first embodiment, except that the installation angles of the chamber 2 and the target generator 71A are different. .

  The chamber 2 may be installed such that the set output direction 10A is inclined with respect to the gravity direction 10B.

  The tank 711A of the target generator 71A may be fixed to the chamber 2 such that the axial direction of the main body 712A is inclined with respect to the gravity direction 10B. The tank 711A may be fixed to the chamber 2 so that the inert gas which has collided with the inner wall surface 717A and whose traveling direction has been changed collides obliquely with the liquid surface 271 of the target material 270.

3.6.2 Operation The operation of the EUV light generation system 1E will be described.

  In the following, the description of the same operations as in the first embodiment will be omitted.

  In the EUV light generation apparatus 1E shown in FIG. 8, the temperature control unit 78A may melt the target material 270, and the piezo element 791A may vibrate the nozzle 718A. When the pressure control unit 762A starts supplying the inert gas into the target generator 71A, the gas flow path 731A can introduce the inert gas 771E in a direction substantially orthogonal to the gravity direction 10B. The inert gas 771E introduced by the gas flow path 731A may collide with the inner wall surface 717A of the tank 711A before colliding with the liquid surface 271 of the target material 270. The inert gas 771E that has collided with the inner wall surface 717A can change its traveling direction and reduce the flow velocity, and can collide with the liquid surface 271 as the inert gas 772E. At this time, since the flow velocity of the inert gas 772E is reduced as compared to the flow velocity of the inert gas 771E, the scattering of the target material 272E can be suppressed as compared with the configuration shown in FIG. As a result, the target substance 272E can be prevented from reaching the lid portion 714A and entering the gas flow path 731A.

  Although the target material 272E may reach the lid 714A, the inert gas 772E may obliquely collide with the liquid surface 271. Due to this collision, the target material 272 E can fly away in a direction oblique to the liquid surface 271. As a result, the target substance 272E can be prevented from reaching the opening on the + Z direction side of the gas flow path 731A, and the entry of the target substance 272E into the gas flow path 731A can be suppressed.

  As described above, since the target substance 272E can be suppressed from entering the gas flow path 731A, the target substance 272E can be suppressed from being solidified inside the pipes 764A, 768A, 769A, 770A and the joint 767A. As a result, interruption of the supply of the inert gas 771E can be suppressed.

  The target substance 272E may enter the gas flow path 731A and adhere to at least one of the pipes 764A, 768A, 769A, 770A and the joint 767A. At least one of the piping 764A, 768A, 769A, 770A and the joint 767A may react with the target material 272E to generate an impurity. Since the second flow path 733A of the gas flow path 731A is formed to extend in a direction inclined with respect to the gravity direction 10B, it adheres to the second flow path 733A even if the target material 272E containing impurities falls. Can be suppressed from reaching the target generator 71A. As a result, impurities can be prevented from blocking the nozzle holes 719A of the nozzles 718A.

3.7 Modified Example The target supply device may have the following configuration.

  In the first and fifth embodiments, the first flow passage 732A of the gas flow passage 731A may be formed to extend in the same direction as the second flow passage 733A.

  In the second embodiment, the second flow passage 733B of the gas flow passage 731B may be formed to extend in a direction inclined with respect to the gravity direction 10B.

  In the third embodiment, the shape of the first surface 735C of the shielding member 734C may be substantially the same as the shape of the opening surface of the gas flow passage 731C.

  In the fourth embodiment, two or more filters 738D may be provided. The two or more filters 738D may have different through holes or may have substantially the same diameter. The filter 738D may be fixed inside the gas flow path 731C. When the filter 738D is fixed to the inside of the gas flow path 731C, the filter 738D may be provided in the entire area of the gas flow path 731C or may be provided in part.

  In the second, third, and fourth embodiments, the tank 711A of the target supply devices 7B, 7C, and 7D may be fixed to the chamber 2 such that the axial direction of the main body 712A is inclined with respect to the gravity direction 10B.

  In the first to fifth embodiments, the gas flow paths 731A, 731B, 731C are formed by the holes penetrating the lid 714A, but may be formed by cylindrical members.

  The above description is intended to be illustrative only and not limiting. Thus, it will be apparent to one skilled in the art that changes can be made to the embodiments of the present disclosure without departing from the scope of the appended claims.

  The terms used throughout the specification and the appended claims should be construed as "non-limiting" terms. For example, the terms "include" or "included" should be interpreted as "not limited to what is described as included." The term "having" should be interpreted as "not limited to what has been described as having." Also, the modifier phrase "one" described in the specification and the appended claims should be interpreted to mean "at least one" or "one or more".

1, 1 E EUV light generator 2 chamber 7 A, 7 B, 7 C, 7 D target supply device 73 A, 73 B, 73 C, 73 D inert gas supply unit 711 A tank 712 A main unit 713 A bottom portion (one end)
714A Cover (other end)
717A inner wall surface 718A nozzle 731A, 731B, 731C gas flow path 732A, 732B first flow path 733A, 733B second flow path 734C shielding member 737C pole (support portion)
738D filter.

Claims (7)

A tank having a cylindrical main body, an end closing an axial end of the main body, and a second end closing the other axial end;
A nozzle provided at the one end of the tank and outputting a target material contained in the tank;
And an inert gas supply unit for supplying an inert gas to the inside of the tank,
The inert gas supply unit includes a gas flow passage penetrating the other end of the tank;
A shielding member configured to be able to shield the opening surface of the gas flow path from the liquid surface of the target material accommodated in the tank at a position away from the other end inside the tank;
And a support unit configured to support the shielding member.   The shielding member guides the inert gas in a direction toward the inner wall of the tank, and the inner wall is between the liquid surface of the target material and the other end. Target supply device. The opening of the gas channel faces the liquid surface of the target material,
The target supply device according to claim 1, wherein the shielding member is disposed between the opening and the liquid surface.   The target supply device according to claim 3, wherein the shielding member has a disk shape.   The target supply device according to claim 3, wherein the support portion is disposed along an outer periphery of an opening of the gas flow channel.   The target supply device according to any one of claims 1 to 5, wherein the shielding member and the supporting portion are formed of any of molybdenum, tungsten, aluminum oxide, silicon oxide, and silicon carbide. The other end, the target supply device according to any one of claims 1 to 6 which is bolted to the body portion.

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