JP6468113B2 - Method for manufacturing light emitting device - Google Patents

Description

  The present invention relates to a method for manufacturing a light emitting device.

  As a method of cleaving a wafer having a semiconductor structure formed on a growth substrate and dividing it into rectangular light emitting elements, a break ball is scanned along the processing groove formed on the wafer, and the wafer is separated from the processing groove as a starting point. A method of tidy up has been proposed.

Japanese Patent Laid-Open No. 10-074712

  However, when the top view shape of the light emitting element is a hexagon, the breaking line formed on the wafer is formed in a polygonal line, so that it is difficult to scan the break ball along the processing groove. Furthermore, when hexagonal light emitting elements are arranged on the wafer without any gaps, the other two light emitting elements are adjacent to each other at one point formed by one corner of the light emitting element. The sides are formed in different directions. Therefore, when the pressing member is scanned along the cleaving line, stress concentrates near the intersection of the cleaving lines (one point where the three light emitting elements 1 are adjacent), which may damage the corners of the light emitting elements.

  Accordingly, an object of the present invention is to provide a manufacturing method capable of suppressing damage to a light emitting element when the wafer is separated into a plurality of light emitting elements having a hexagonal shape when viewed from above.

  A method of manufacturing a light emitting device according to an embodiment of the present invention includes a step of preparing a wafer having a semiconductor structure provided on a main surface of a substrate, and a plurality of light emitting devices having a hexagonal shape when viewed from above. The step of forming a cleaving starting point for cleaving, the step of preparing a holding sheet for holding the wafer in a predetermined state, and the semiconductor structure side of the wafer with the substrate side surface of the wafer attached to the holding sheet The step of holding the wafer so that the surface of the light-emitting element faces downward, the step of preparing a pressing member having a curved front end, and the top surface of the light emitting element in a state of pressing the front end against the holding sheet The wafer is cleaved by scanning the tip in a direction that is not parallel to the sides, and the wafer is cut into a plurality of light emitting elements each having a hexagonal shape when viewed from above.

  According to the method for manufacturing a light-emitting element according to an embodiment of the present invention, it is possible to suppress damage to the light-emitting element when the wafer is separated into a plurality of light-emitting elements having a hexagonal shape when viewed from above. .

It is sectional drawing which shows typically the light emitting element obtained by the manufacturing method which concerns on one Embodiment of this invention. It is a top view which shows typically the wafer used for the manufacturing method which concerns on one Embodiment of this invention. It is sectional drawing which shows typically the example which irradiates the inside of a wafer with a laser beam, and forms a cutting origin part. FIG. 4 is a main part enlarged top view schematically showing an example in which a cleavage starting point is formed on the wafer of FIG. 3. It is sectional drawing which shows typically a mode that a wafer is cleaved with a press member. It is a figure which shows typically a mode that a wafer is pressed with the front-end | tip part of a pressing member. It is a top view which shows typically the scanning pattern which scans a press member on a wafer.

  FIG. 1 is a view showing a cross-sectional view of a light-emitting element 1 obtained by the manufacturing method according to the present embodiment. FIG. 2 is a top view showing the appearance of the wafer used in this embodiment. FIG. 3 is a cross-sectional view for explaining an example in which the cleaving starting point portion 12 is formed. FIG. 4 is an enlarged top view of a main part for explaining a state in which a part of the wafer 10 is enlarged and the cleavage starting point 12 is formed on the wafer 10. FIG. 5 is a diagram illustrating a state in which the wafer 10 held on the holding sheet 30 is cleaved using the pressing member 20. FIG. 6 is an enlarged cross-sectional view of a main part showing a state in which the pressing member 20 is pressed against the holding sheet 30. FIG. 7 is a diagram showing a pattern in which the pressing member 20 is scanned on the wafer 10 and an enlarged top view of a main part for enlarging a part of the wafer 10 and explaining the relationship between the scanning pattern SP and the light emitting element 1. .

  The method for manufacturing a light emitting device according to the present embodiment includes a step of preparing a wafer 10 provided with a semiconductor structure 4 on a main surface of a substrate 2, and a plurality of light emitting devices whose top view shape is hexagonal on the substrate 2. A step of forming a cleaving starting point portion 12 for cleaving into 1, a step of preparing a holding sheet 30 for holding the wafer 10 in a predetermined state, and a surface of the wafer 10 on the substrate 2 side is attached to the holding sheet 30 In this state, the step of holding the wafer 10 so that the surface of the wafer 10 facing the semiconductor structure 4 faces downward, the step of preparing the pressing member 20 having the curved tip end portion 22, and pressing the tip end portion 22 against the holding sheet 30 In the applied state, the wafer 10 is cleaved by scanning the tip 22 in a direction not parallel to any of the sides constituting the light-emitting element 1 when viewed from above, and the plurality of light-emitting elements 1 having a hexagonal shape when viewed from above. In pieces And a step for, a.

  This makes it possible to suppress damage to the light emitting element 1 when the wafer 10 is divided into a plurality of light emitting elements 1 having a hexagonal shape when viewed from the top. Hereinafter, this point will be described.

  When the wafer 10 is cleaved into light emitting elements having a rectangular shape when viewed from above, the cleaving line formed on the wafer 10 is straight and can be cleaved easily along the cleaving line. On the other hand, if the light emitting element 1 has a hexagonal shape when viewed from the top, the cleaving line is broken and it is difficult to scan the pressing member 20 along the cleaving line. Furthermore, as shown in FIG. 4, when the hexagonal light emitting elements 1 are arranged on the wafer 10 without gaps (planar filling), the other two light emitting elements 1 are formed at one point formed by one corner of one light emitting element 1. Are adjacent to each other, but three sides connected to one point are formed in different directions. Therefore, when the pressing member 20 is scanned along the cleaving line, stress concentrates near the intersection of the cleaving lines (one point where the three light emitting elements 1 are adjacent), and there is a possibility that the corner portion of the light emitting element 1 is loaded and damaged.

  Therefore, in this embodiment, the wafer 10 is separated into a plurality of light emitting elements 1 by scanning the pressing member 20 whose tip 22 is curved in a direction not parallel to any side of the light emitting elements 1. As a result, the stress can be separated into pieces without concentrating at the intersection of the cleaving lines, and damage to the light emitting element 1 can be suppressed.

  Further, in the present embodiment, the wafer 10 is held such that the surface of the wafer 10 on the side of the semiconductor structure 4 faces downward while the surface of the wafer 10 on the substrate 2 side is attached to the holding sheet 30. Scanning with the pressing member 20 pressed. When the wafer 10 is sandwiched between the protective sheets or the like when being singulated into a plurality of light emitting elements 1, if stress is applied from one surface side, the wafer 10 comes into contact with the protective sheet provided on the other surface side. The light emitting element 1 may be damaged. Therefore, in this embodiment, the surface of the wafer 10 that is not attached to the holding sheet 30 is exposed. Thereby, since the wafer 10 does not contact anything at the time of cleaving and there is no load applied to the wafer 10, damage to the light emitting element 1 can be suppressed. Further, when the wafer 10 is cleaved, even if the light emitting element 1 is chipped, the chip does not fall downward from the wafer 10 and remain on the wafer. Therefore, the singulation process is not performed in the state where the chip of the light emitting element 1 remains, and secondary damage such as generation of further chipping of the light emitting element 1 due to the chipping of the light emitting element 1 is suppressed. Can do.

  Hereinafter, a method for manufacturing the light-emitting element 1 will be described with reference to the drawings.

(Wafer preparation process)
First, a wafer 10 having a semiconductor structure 4 provided on the main surface of the substrate 2 is prepared. As shown in the top view of FIG. 2, the wafer 10 is provided with an orientation flat surface OL having a substantially circular shape when viewed from above and having a part of an arc flat. The wafer 10 includes a substrate 2 and a semiconductor structure 4 provided thereon. The size of the wafer 10 can be, for example, about Φ50 to 100 mm.

  As shown in the cross-sectional view of FIG. 1, the light emitting device 1 obtained by dividing the wafer 10 into pieces by the manufacturing method according to the embodiment of the present invention is formed as a semiconductor structure 4 on the main surface of the substrate 2. A plurality of semiconductor layers are stacked. That is, the wafer 10 is in a state where a plurality of light emitting elements 1 are connected vertically and horizontally. Specifically, the light-emitting element 1 includes a semiconductor structure 4 on a main surface of a substrate 2 in which a p-side semiconductor layer 4p, an active layer 4a, and an n-side semiconductor layer 4n are sequentially stacked from the main surface side. An n-electrode 3A is electrically connected to the n-side semiconductor layer 4n, and a p-electrode 3B is electrically connected to the p-side semiconductor layer 4p. The semiconductor structure 4 is covered with an insulating protective film 5.

(Cleavage starting point formation process)
Next, a cleavage starting point portion 12 for separating the wafer 10 into a plurality of light emitting elements 1 is formed on the substrate 2. The cleaving starting point portion 12 is a portion that is formed in order to obtain the light emitting element 1 by dividing the wafer 10 into a predetermined size, and serves as a guide for facilitating the cleaving of the wafer 10. FIG. 3 shows an example in which the cleavage start point 12 is formed by irradiating the inside of the substrate 2 with the laser beam LB. By scanning the laser beam with respect to the wafer 10, it is possible to form the cleavage starting point 12 having a desired pattern. In the present embodiment, the split starting point 12 is formed in a continuous linear shape in a top view, but it may be a discrete pattern such as a wavy line or a dot.

  In FIG. 3, the band-shaped modified region formed inside the substrate 2 is shown as the cleaving starting point portion 12, but actually, the cleaving starting point portion 12 mainly extends from the modified region in the thickness direction of the substrate 2 (FIG. 3) after laser irradiation. In the vertical direction). However, it is also possible to form a groove on the surface of the substrate 2 and use it as the breaking start point 12.

  As shown in FIG. 3, the cleaving starting point 12 is focused on the substrate 2 by irradiating the laser beam from the surface opposite to the main surface on which the semiconductor structure 4 is formed, that is, the back surface side of the substrate 2. Can be formed. Thereby, it can suppress that the semiconductor structure 4 is damaged with a laser beam. Further, when the laser beam is irradiated from the back surface side of the substrate 2, the condensing position of the laser beam inside the substrate 2 is, for example, a position separated by 70 μm or more from the semiconductor structure 4 in the thickness direction of the substrate 2. preferable. By setting it as such a condensing position, the damage by the laser beam of the semiconductor structure 4 can be suppressed.

  The cleaving start point 12 is preferably formed so as to reach the surface opposite to the main surface on which the semiconductor structure 4 is formed, that is, the back surface of the substrate 2. Thereby, the wafer 10 can be easily cleaved in an individualization process to be described later. Furthermore, it is preferable to form the cleaving start point 12 so that one end of the cleaving start point 12 reaches the vicinity of the semiconductor structure 4. Thereby, the thickness of the wafer 10 to be cleaved in the singulation process is further reduced, and the wafer 10 can be easily cleaved and separated into individual light emitting elements, so that the light emitting element 1 can be prevented from being chipped. However, the cleaving starting point 12 does not have to reach the vicinity of the semiconductor structure 4 in the entire region.

  When forming the split starting point 12 near the semiconductor structure 4, the distance between the split starting point 12 and the semiconductor structure 4 can be 0 to 10 μm. A part of the cleaving start point 12 may penetrate the semiconductor structure 4 and reach the surface of the wafer 10. However, when the semiconductor structure 4 is completely divided, the light emitting element is formed before entering the singulation process. Therefore, it is preferable that the cleavage starting point 12 does not penetrate the semiconductor structure 4 until the individualization step is performed. The extent to which the split starting point 12 extends can be adjusted by the laser light irradiation conditions, the standby time after laser light irradiation, and the like.

  Laser light can be applied to the wafer by pulse driving. In this case, the energy per pulse can be set to 0.8 to 5 μJ, for example. The frequency of the laser light can be set to, for example, 50 to 200 kHz. The pulse width of the laser light can be, for example, 300 to 50000 fs (femtosecond). The wavelength of the laser light can be 500 to 1100 nm. The laser beam irradiation scanning speed can be 20 to 2000 mm / sec.

  The pattern for forming the cleavage starting point 12 on the substrate 2 defines the shape of the light-emitting element 1 obtained by the individualization process in a top view. In general, the shape of the light-emitting element 1 is a rectangular shape. However, in consideration of a combination with a lens or the like, an irradiation range of output light, and the like, a circular shape is preferable. However, in the case of a circular light emitting device, the cleaving itself is difficult. Therefore, when the light emitting element 1 having a hexagonal shape in the top view is used, improvement can be expected so that the shape in the top view of the light emitting element 1 is close to a circle and higher quality output light can be obtained.

  As shown in FIG. 4, the pattern of the cleavage starting point portion 12 is formed on the wafer 10 so that the plurality of light emitting elements 1 have a hexagonal shape when viewed from above. When formed in this way, the breaking start point 12 has a bent line shape that is bent when the wafer 10 is viewed from above. In order to reduce a useless area on the wafer 10 as much as possible, the light emitting elements 1 are arranged so as to be flat-filled. In the present embodiment, the top view shape of the light-emitting element 1 is a regular hexagon having the same length on one side, and these are arranged in a honeycomb shape.

  As the substrate 2, a substrate having a hexagonal crystal structure can be used. Examples of the substrate 2 having a hexagonal crystal structure include a sapphire substrate and a GaN substrate. For example, when the sapphire substrate is irradiated with laser light to form the cleavage starting point portion 12 that defines the light emitting element 1 having a hexagonal shape when viewed from above, at least one side of the hexagonal light emitting element 1 is along the a plane. It is preferable to use the cleaving starting point 12. In this way, cracks due to laser light irradiation are easily extended in the thickness direction, and the wafer 10 can be easily cleaved. Usually, since the substrate 2 occupies most of the thickness of the wafer 10, the cleaving ease of the substrate 2 is almost equal to the cleaving ease of the wafer 10. When a member other than the substrate 2 such as the semiconductor structure 4 occupies most of the thickness of the wafer, the member may be formed of a material having a hexagonal crystal structure.

(Holding process)
Next, a holding sheet 30 for holding the wafer 10 in a predetermined state is prepared, and the wafer 10 is attached to the holding sheet 30 as shown in FIG. Specifically, the wafer 10 is held such that the surface of the wafer 10 on which the semiconductor structure 4 is provided faces downward while the surface of the wafer 10 on the substrate 2 side is attached to the holding sheet 30. For example, the periphery of the holding sheet 30 to which the wafer 10 is attached is fixed in a state of being sandwiched by a frame member or the like, and the wafer 10 is held so as to face downward. In this way, the surface of the wafer 10 on which the semiconductor structure 4 is formed is exposed when the wafer 10 is cleaved in the singulation process to be described later, so that the wafer 10 is covered with a protective sheet or the like. Compared to the case, the load that the semiconductor structure 4 comes into contact with the protective sheet when cleaved is suppressed. As a result, chipping of the individual light-emitting elements 1 is suppressed, and the light-emitting elements 1 having excellent reliability can be manufactured with high productivity. Furthermore, even if the light emitting element 1 is chipped when cleaved, it is possible to avoid a situation in which the chip is dropped and remains on the wafer 10. Therefore, the singulation process is not performed in the state where the light emitting element 1 remains, and the secondary light emitting element 1 is prevented from being damaged due to the remaining chip. Can do.

  The holding sheet 30 is not particularly limited as long as it can hold the wafer 10 downward in the holding step, and for example, a UV tape or an adhesive sheet can be used.

  The wafer 10 may be affixed to the holding sheet 30 before or after the cleaving start point 12 is formed, but it is preferable that the wafer 10 is affixed to the holding sheet 30 before the cleaving start point 12 is formed. In the case where the cleaving start point 12 occurs up to the vicinity of the semiconductor structure 4, if the wafer 10 is to be attached to the holding sheet 30 after the cleaving start point 12 is formed, there is a possibility that the light emitting element 1 is scattered unintentionally and scattered. Because there is.

(Individualization process)
Next, the wafer 10 is cut and separated into a plurality of light emitting elements 1. The substrate 2 is formed with a cleaving starting point 12, and the wafer 10 is cleaved by the cleaving starting point 12. Specifically, as shown in FIG. 6, the wafer 10 is moved on the holding sheet 30 in a state where the front end portion 22 of the pressing member 20 is pressed against the holding sheet 30, and the wafer 10 is divided into a plurality of pieces by using the cleavage starting point portion 12. The light emitting element 1 is separated into individual pieces.

  The pattern that scans the pressing member 20 moves the pressing member 20 in a direction that intersects all the straight lines including the line segments that form the split starting point 12 in the top view of the wafer 10. That is, the pressing member 20 is scanned in a direction that is not parallel to any of the sides constituting the polygon of the outer shape of each light emitting element. Here, since the cleavage starting point portion 12 formed on the wafer 10 to form the light emitting element 1 having a hexagonal shape when viewed from above is a polygonal line, it is difficult to scan the pressing member 20 along the cleavage starting point portion 12. It is. Furthermore, as shown in FIG. 4, when the hexagonal light emitting elements 1 are arranged on the wafer 10 without a gap, the other two light emitting elements 1 are adjacent to each other at one point formed by one light emitting element 1. However, the three sides connected to one point are formed in different directions. Therefore, when the pressing member 20 is scanned along the breaking starting point 12, stress concentrates near the intersection of the breaking starting point 12 (one point where the three light emitting elements 1 are adjacent), and the corner of the light emitting element 1 is loaded and damaged. There is a fear. Therefore, in the present embodiment, scanning is performed in a direction that obliquely intersects the line segment of the breaking start point 12 in a top view, as shown in FIG. . By such scanning, a stress is applied to the cleaving start point 12 provided in various directions and angles so as to cleave at a stroke. As a result, since the stress is cleaved without concentrating at the intersection of the cleaving lines, the light emitting element 1 can be separated into individual pieces while suppressing damage. Furthermore, since the number of scans can be reduced, the manufacturing time can be shortened, and the productivity of the manufacturing process of the light emitting element 1 can be improved.

  The direction in which the pressing member 20 is scanned can be, for example, a direction inclined with respect to the orientation flat surface OL of the wafer 10 as shown in FIG. At this time, the angle θ for inclining the scanning direction of the pressing member 20 with respect to the orientation flat surface OL is an angle that is not parallel to any side constituting the outer shape of the light emitting element 1, that is, an angle that intersects any side. Set to. For example, in the example of FIG. 7, the outer shape of the light emitting element 1 is a regular hexagonal shape and one side of the regular hexagon is arranged in a posture parallel to the orientation flat surface OL, and therefore, 0 ° with respect to the orientation flat surface OL. When the pressing member 20 is scanned at an angle of 60 °, 120 °, it matches one of the sides of the hexagon. When such scanning is performed, it is considered that stress concentrates on any one side, and the cleaving stress becomes relatively weak at portions corresponding to the other sides, resulting in variations in the quality of the fractured surface. Therefore, the direction in which the pressing member 20 is scanned is set to an angle excluding the angle θ that is inclined by 0 °, 60 °, and 120 ° with respect to the orientation flat surface OL. In the present embodiment, the angle θ is set to 45 °.

  The interval P of the scanning pattern SP is preferably set so that all the light emitting elements 1 included in the wafer 10 are cleaved. Since the range that can be pressed by one linear scan is determined by the shape of the tip 22 and the amount of pressing, the interval P of the scan pattern SP can be set in consideration thereof. The interval P between the scanning patterns SP is preferably equal to or smaller than the maximum width of the area where the tip 22 can be pressed, and is preferably smaller than the maximum width. Note that the scanning pattern SP of the pressing member 20 indicates a trajectory through which the center of the tip 22 passes.

  The case where the orientation flat surface OL and one of the sides of the light emitting element 1 are parallel has been described above as an example. With such an arrangement, the scanning direction can be determined with the orientation flat surface OL as a reference. However, the present invention is not limited to this, and for example, any of the sides of the light emitting element 1 may be arranged not parallel to the orientation flat surface OL.

(Pressing member 20)
As shown in FIGS. 5 and 6, the pressing member 20 has a curved end portion 22 that is pressed against the holding sheet 30. By pressing the pressing member 20 whose tip 22 is a curved surface against the holding sheet 30, the wafer 10 and the holding sheet 30 can be bent while the stress from the operating point is dispersed. It is possible to cleave while reducing the risk of breaking in an unintended direction. Thereby, even if the cleaving start point 12 is formed in a polygonal line shape, it is possible to cleave while efficiently applying stress to the cleaving start point 12, and damage to the light emitting element 1 can be suppressed. Furthermore, since the load on the wafer 10 can be reduced, chipping of the light emitting element 1 is suppressed.

  As the material of the pressing member 20, stainless steel, zirconia, or the like can be used.

  The tip 22 of the pressing member 20 is preferably a spherical surface. In this specification, it is needless to say that the spherical surface does not mean the entire surface of the sphere, but a partial surface of the sphere. For example, in order to make the front-end | tip part 22 of the press member 20 into a spherical surface, the shape of the front-end | tip part 22 can be made into a hemispherical shape. Moreover, the front-end | tip part 22 may be comprised with the spherical body. For example, a sphere may be fixed to a holder and the wafer 10 may be pressed by this sphere. By using the spherical tip 22, the wafer 10 can be pressed in a region close to a point. The tip portion 22 may be an elliptical surface other than a spherical surface.

  In the present embodiment, the outer diameter of the tip portion 22 is longer than the diameter of the circumscribed circle of the light emitting element 1 in a top view. Preferably, the outer diameter of the tip portion 22 is set to be twice or more the diameter of the circumscribed circle of the light emitting element 1 in a top view. Further, the outer diameter of the tip 22 is smaller than the diameter of the wafer 10, for example.

  The tip portion 22 preferably has a larger curvature than a curved surface capable of pressing the entire wafer 10 at a time. That is, it is preferable that the radius of curvature is smaller than a curved surface capable of pressing the entire wafer 10 at a time. Since the amount of bending of the wafer 10 can be increased by increasing the curvature (decreasing the radius of curvature), it is possible to cleave well. The curvature radius of the front-end | tip part 22 can be 2-20 mm, for example. Further, the radius of curvature of the distal end portion 22 may be about 2 to 25 times as long as one side of the shape of the light emitting element 1 viewed from above. As shown in FIG. 6, the front end portion 22 is sized so as to be able to simultaneously press the left and right sides of the cleaving start point portion 12 serving as a cleaving position, as shown in FIG. Is preferred. If the outer diameter of the distal end portion 22 is smaller than the outer diameter of the light emitting element 1, only the light emitting element 1 on one side of the breaking starting point portion 12 may be pressed. For this reason, it is preferable that the outer diameter of the spherical surface of the tip portion 22 is larger than the outer diameter of the light emitting element 1. In the present embodiment, the distance between the apexes facing each other across the center of the hexagon is the outer diameter of the light emitting element 1. Thereby, even if the front-end | tip part 22 contacts in any position of the light emitting element 1, it is possible to always press the range containing the split starting part 12 on both sides. And by setting the pushing amount of the pressing member 20 so that it can press in that way, it can cut reliably. The outer diameter of the tip portion 22 can be set to about 5 to 30 times the outer diameter of the light emitting element 1, for example.

  The tip portion 22 refers to a portion of the pressing member 20 that includes a surface that can press the wafer 10. At the time of pressing, it is preferable to press the wafer 10 in a very small area where the tip 22 is close to a point. Thereby, it becomes possible to cleave easily with a small force. Further, as described above, it is preferable to set the shape (outer diameter, curvature, etc.) of the tip 22 and the pressing amount of the pressing member 20 so that two or more adjacent light emitting elements 1 can be pressed simultaneously. Thereby, since the pressing member 20 can be scanned in the state in which the front-end | tip part 22 always presses the 2 or more light emitting elements 1, it can cleave efficiently. That is, in the state in which the tip portion 22 presses only one light emitting element 1, the pressed light emitting element 1 is slightly depressed and is not easily divided, but this state can be avoided.

(Light emitting element extraction process)
After separating the light emitting elements 1 into pieces, the plurality of light emitting elements 1 are taken out. Each light emitting element 1 is held in a state of being attached to the holding sheet 30. And each light emitting element 1 can be removed from the holding sheet 30 from the state where each light emitting element 1 was cleaved along the cleaving starting point portion 12, and the separated light emitting element 1 can be obtained.

  While the embodiments have been described above, these descriptions are only examples, and do not limit the configurations described in the claims.

DESCRIPTION OF SYMBOLS 1 ... Light emitting element 2 ... Substrate 3 ... Electrode 3A ... n electrode 3B ... p electrode 4 ... Semiconductor structure 4p ... p side semiconductor layer 4a ... Active layer 4n. .... n-side semiconductor layer 5 ... protective film 10 ... wafer 12 ... splitting starting point 20 ... pressing member 22 ... tip 30 ... holding sheet LB ... laser beam OL ... orientation flat Surface SP: Scanning pattern

Claims (9)

Preparing a wafer provided with a semiconductor structure on a main surface of the substrate;
Forming a cleaving start point for cleaving into a plurality of light emitting elements having a hexagonal shape when viewed from above on the substrate;
Preparing a holding sheet for holding the wafer in a predetermined state;
Holding the wafer such that the semiconductor structure side surface of the wafer faces downward in a state where the substrate side surface of the wafer is attached to a holding sheet;
Preparing a pressing member having a spherical tip end;
The wafer is cleaved by scanning the tip portion in a direction not parallel to any of the sides constituting the light emitting element in a top view with the tip portion pressed against the holding sheet. And a step of dividing the light-emitting element into a plurality of hexagonal light-emitting elements.   2. The method of manufacturing a light emitting element according to claim 1, wherein an outer diameter of the tip portion is longer than a diameter of a circumscribed circle in a top view shape of the light emitting element. 3. The method for manufacturing a light-emitting element according to claim 1, wherein the cleaving start portion reaches a surface opposite to a surface on which the semiconductor structure of the substrate is formed. The fracture origin unit, manufacturing method of a light-emitting element according to any one of claims 1 to 3 which is formed to the vicinity of the semiconductor structure of the substrate. The fracture origin unit, manufacturing method of a light-emitting element according to any one of claims 1 to 4, which is formed by focusing a laser beam on the inside of the substrate. The substrate is a sapphire substrate;
The fracture origin unit, at least one side are provided methods for producing the light-emitting device according to any one of claims 1 to 5 which is formed along the a-plane of the substrate of the light emitting element. The method for manufacturing a light emitting element according to claim 1, wherein the cleaving start point does not penetrate the semiconductor structure. The method for manufacturing a light emitting element according to any one of claims 1 to 7, wherein the tip portion is scanned in a single scan in the singulation step. 9. The light-emitting element manufacturing method according to claim 1, wherein an interval between scanning patterns for scanning the tip portion in the individualization step is equal to or less than a maximum width of a region where the tip portion can be pressed. Method.

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