JP6453852B2 - イオンビームソース - Google Patents

イオンビームソース Download PDF

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Publication number
JP6453852B2
JP6453852B2 JP2016510624A JP2016510624A JP6453852B2 JP 6453852 B2 JP6453852 B2 JP 6453852B2 JP 2016510624 A JP2016510624 A JP 2016510624A JP 2016510624 A JP2016510624 A JP 2016510624A JP 6453852 B2 JP6453852 B2 JP 6453852B2
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JP
Japan
Prior art keywords
ion beam
beam source
magnetic pole
closed loop
gas
Prior art date
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Application number
JP2016510624A
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English (en)
Japanese (ja)
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JP2016520964A5 (enExample
JP2016520964A (ja
Inventor
ユンソク ファン
ユンソク ファン
ユンスン ホ
ユンスン ホ
Original Assignee
株式会社ファインソリューション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130046947A external-priority patent/KR101478216B1/ko
Priority claimed from KR20130067501A external-priority patent/KR101480114B1/ko
Priority claimed from KR1020130131434A external-priority patent/KR101817220B1/ko
Priority claimed from KR1020140041227A external-priority patent/KR101566384B1/ko
Application filed by 株式会社ファインソリューション filed Critical 株式会社ファインソリューション
Publication of JP2016520964A publication Critical patent/JP2016520964A/ja
Publication of JP2016520964A5 publication Critical patent/JP2016520964A5/ja
Application granted granted Critical
Publication of JP6453852B2 publication Critical patent/JP6453852B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H01J27/143—Hall-effect ion sources with closed electron drift

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2016510624A 2013-04-26 2014-04-25 イオンビームソース Active JP6453852B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
KR1020130046947A KR101478216B1 (ko) 2013-04-26 2013-04-26 이온 소스 및 이를 갖는 이온빔 처리 장치
KR10-2013-0046947 2013-04-26
KR20130067501A KR101480114B1 (ko) 2013-06-13 2013-06-13 밀폐 고정 절연부를 갖는 이온 소스
KR10-2013-0067501 2013-06-13
KR10-2013-0131434 2013-10-31
KR1020130131434A KR101817220B1 (ko) 2013-10-31 2013-10-31 경사진 다중 루프 이온 소스, 이를 갖는 이온빔 처리 장치 및 이온빔 스퍼터링 장치
KR1020140041227A KR101566384B1 (ko) 2014-04-07 2014-04-07 전극에 가스 분출부를 갖는 이온 소스
KR10-2014-0041227 2014-04-07
PCT/KR2014/003683 WO2014175702A1 (ko) 2013-04-26 2014-04-25 이온빔 소스

Publications (3)

Publication Number Publication Date
JP2016520964A JP2016520964A (ja) 2016-07-14
JP2016520964A5 JP2016520964A5 (enExample) 2017-06-01
JP6453852B2 true JP6453852B2 (ja) 2019-01-16

Family

ID=51792161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016510624A Active JP6453852B2 (ja) 2013-04-26 2014-04-25 イオンビームソース

Country Status (3)

Country Link
US (1) US9269535B1 (enExample)
JP (1) JP6453852B2 (enExample)
WO (1) WO2014175702A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10522330B2 (en) * 2015-06-12 2019-12-31 Varian Semiconductor Equipment Associates, Inc. In-situ plasma cleaning of process chamber components
KR101677005B1 (ko) * 2016-04-05 2016-11-17 (주)화인솔루션 전하량 조절이 가능한 플라즈마 공정 장치
JP6896947B1 (ja) * 2019-09-09 2021-06-30 株式会社アルバック イオンガン
WO2021074953A1 (ja) * 2019-10-15 2021-04-22 学校法人東海大学 成膜方法及び成膜装置
DE102020114162B3 (de) 2020-05-27 2021-07-22 VON ARDENNE Asset GmbH & Co. KG Ionenquelle und Verfahren
KR102365679B1 (ko) * 2021-05-28 2022-02-18 김두한 가변 간극을 가지는 이온 소스
US11769648B2 (en) * 2021-10-28 2023-09-26 Applied Materials, Inc. Ion source gas injection beam shaping
CN115852315B (zh) * 2022-12-20 2024-07-19 安徽纯源镀膜科技有限公司 一种用于提高退膜效率的设备及工艺
KR102861205B1 (ko) * 2023-08-31 2025-09-17 주식회사 이온플럭스 선형 이온 빔 소스

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002208A (en) * 1998-07-02 1999-12-14 Advanced Ion Technology, Inc. Universal cold-cathode type ion source with closed-loop electron drifting and adjustable ion-emitting slit
US6870164B1 (en) 1999-10-15 2005-03-22 Kaufman & Robinson, Inc. Pulsed operation of hall-current ion sources
US6750600B2 (en) * 2001-05-03 2004-06-15 Kaufman & Robinson, Inc. Hall-current ion source
US6815690B2 (en) * 2002-07-23 2004-11-09 Guardian Industries Corp. Ion beam source with coated electrode(s)
US7259378B2 (en) * 2003-04-10 2007-08-21 Applied Process Technologies, Inc. Closed drift ion source
US7425709B2 (en) 2003-07-22 2008-09-16 Veeco Instruments, Inc. Modular ion source
US7183559B2 (en) * 2004-11-12 2007-02-27 Guardian Industries Corp. Ion source with substantially planar design
KR20060066791A (ko) 2004-12-14 2006-06-19 동부일렉트로닉스 주식회사 이온중화장치 및 방법
US7312579B2 (en) * 2006-04-18 2007-12-25 Colorado Advanced Technology Llc Hall-current ion source for ion beams of low and high energy for technological applications
JP2008053116A (ja) * 2006-08-25 2008-03-06 Ulvac Japan Ltd イオンガン、及び成膜装置
US7622721B2 (en) * 2007-02-09 2009-11-24 Michael Gutkin Focused anode layer ion source with converging and charge compensated beam (falcon)
CN102308358B (zh) 2008-12-08 2015-01-07 通用等离子公司 具有自清洁阳极的闭合漂移磁场离子源装置及基材改性修改方法

Also Published As

Publication number Publication date
WO2014175702A1 (ko) 2014-10-30
US20160049277A1 (en) 2016-02-18
JP2016520964A (ja) 2016-07-14
US9269535B1 (en) 2016-02-23

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